WO2013078670A1 - 液晶显示器 - Google Patents

液晶显示器 Download PDF

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Publication number
WO2013078670A1
WO2013078670A1 PCT/CN2011/083347 CN2011083347W WO2013078670A1 WO 2013078670 A1 WO2013078670 A1 WO 2013078670A1 CN 2011083347 W CN2011083347 W CN 2011083347W WO 2013078670 A1 WO2013078670 A1 WO 2013078670A1
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WIPO (PCT)
Prior art keywords
liquid crystal
main
pixel
sub
capacitor
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PCT/CN2011/083347
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English (en)
French (fr)
Inventor
李冬
Original Assignee
深圳市华星光电技术有限公司
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Priority to US13/379,354 priority Critical patent/US8922728B2/en
Publication of WO2013078670A1 publication Critical patent/WO2013078670A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133753—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers with different alignment orientations or pretilt angles on a same surface, e.g. for grey scale or improved viewing angle
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix

Definitions

  • the present invention relates to the field of liquid crystal display, and more particularly to a liquid crystal display having a wide viewing angle.
  • the viewing angle of the liquid crystal display has always been a key indicator to measure the quality of the liquid crystal display.
  • the problem of Washout is based on the wide viewing angle technology of liquid crystal displays.
  • the alignment technique of the pixel area is VA (Vertical A wide viewing angle technology widely used in liquid crystal displays of the Aligment mode, which divides each pixel area into a plurality of alignment areas, and the liquid crystal molecules of each alignment area have different deflection angles, thereby forming a larger Visual perspective.
  • the wide viewing angle technology mainly has two modes of four domain division and eight domain division. Among them, there are two main categories of eight-domain division technology being used in the market: Common Electrode Voltage Modulation (Com-Swing) and Charge Sharing (Charge) Sharing), but both of these technologies have the drawback of complex drive circuitry and low aperture ratio.
  • the present invention relates to a liquid crystal display comprising a plurality of data lines, a plurality of scan lines, and a plurality of pixels disposed at a position where the scan lines and the data lines are interdigitated, wherein the pixels include a main pixel and a second a pixel, the main pixel includes a main thin film field effect transistor, the sub-pixel includes a sub-thin field effect transistor, and a channel width-to-length ratio of the main thin film field effect transistor is longer than a channel width of the sub-thin field effect transistor The ratio is different; an alignment layer that controls a deflection direction of the liquid crystal molecules in the main pixel and the sub-pixel is disposed on the transparent electrode layer of the liquid crystal display.
  • the present invention also relates to a liquid crystal display comprising a plurality of data lines, a plurality of scan lines, and a plurality of pixels disposed at a position where the scan lines and the data lines are interdigitated, wherein the pixels comprise a main pixel and a sub-pixel,
  • the main pixel includes a main thin film field effect transistor
  • the sub-pixel includes a sub-thin field effect transistor
  • a channel width-to-length ratio of the main thin film field effect transistor is different from a channel width-to-length ratio of the sub-thin field effect transistor .
  • the main thin film field effect transistor has a channel width to length ratio of 42/5.5 to 46/5.5
  • the sub-thin field effect transistor has a channel width to length ratio of 51/5.5 to 64/5.5.
  • the liquid crystal display includes a plurality of liquid crystal molecules; the main pixel further includes a main liquid crystal capacitor for deflecting liquid crystal molecules in the main pixel; the sub-pixel further includes a sub-liquid crystal capacitor for deflecting liquid crystal molecules in the sub-pixel; a capacitance value of the sub-liquid crystal capacitor is different from a capacitance value of the main liquid crystal capacitor.
  • the capacitance value of the main liquid crystal capacitor is 0.576-0.904 picofarad
  • the capacitance value of the secondary liquid crystal capacitor is 0.522-0.783 picofarad.
  • the main pixel further includes a main storage capacitor for holding a voltage value on the main liquid crystal capacitor; the sub-pixel further includes a voltage for holding the sub-liquid crystal capacitor The secondary storage capacitor of the value; the capacitance value of the secondary storage capacitor is different from the capacitance value of the primary storage capacitor.
  • the capacitance value of the main storage capacitor is 0.761-0.764 picofarads
  • the capacitance value of the secondary storage capacitor is 0-0.24 picofarads.
  • the main pixel further includes a main common electrode, a first main transparent electrode layer, and a second main transparent electrode layer, the first main transparent electrode layer and the second main transparent electrode
  • the layer forms the main liquid crystal capacitor
  • the first main transparent electrode layer and the main common electrode form the main storage capacitor.
  • the main thin film field effect transistor has a gate, an input end and an output end; the gate is connected to a corresponding scan line, and the input end is connected to a corresponding data line.
  • the output terminal is connected to the first main transparent electrode.
  • the sub-pixel further includes a sub-common electrode, a first transparent electrode layer, and a second transparent electrode layer, the first transparent electrode layer and the second transparent electrode
  • the layer forms the secondary liquid crystal capacitor
  • the first transparent electrode layer and the secondary common electrode form the secondary storage capacitor
  • the secondary thin film field effect transistor has a gate, an input end and an output end; the gate is connected to a corresponding scan line, and the input end is connected to a corresponding data line.
  • the output terminal is connected to the first transparent electrode.
  • the present invention also relates to a liquid crystal display comprising a plurality of data lines, a plurality of scan lines, and a plurality of pixels disposed at an intersection of the scan lines and the data lines, wherein the pixels comprise main pixels and a sub-pixel, the main pixel comprising a main thin film field effect transistor, a main liquid crystal capacitor for deflecting liquid crystal molecules in the main pixel, and a main storage capacitor for holding a voltage value on the main liquid crystal capacitor,
  • the sub-pixel includes a sub-thin field effect transistor, a sub-liquid crystal capacitor for deflecting liquid crystal molecules in the sub-pixel, and a secondary storage capacitor for maintaining a voltage value on the sub-liquid crystal capacitor;
  • the main thin film field The effect transistor has a channel width to length ratio of 42/5.5 to 46/5.5, and the secondary thin film field effect transistor has a channel width to length ratio of 51/5.5 to 64/5.5; the capacitance value of the secondary liquid crystal capacitor is The capacitance values of the main liquid crystal capacitors are different;
  • the capacitance value of the main storage capacitor is 0.761-0.764 picofarads
  • the capacitance value of the secondary storage capacitor is 0-0.24 picofarads.
  • the capacitance value of the main liquid crystal capacitor is 0.576-0.904 picofarad
  • the capacitance value of the secondary liquid crystal capacitor is 0.522-0.783 picofarad.
  • the transparent electrode layer of the liquid crystal display is provided with an alignment layer that controls the deflection direction of the liquid crystal molecules in the main pixel and the sub-pixel.
  • the eight-domain division of pixels is realized by using a thin film field effect transistor with different channel width-to-length ratios for the primary and secondary pixels, which solves the technical problem that the driving circuit of the eight-domain division technology of the conventional liquid crystal display is complicated and the aperture ratio is low.
  • FIG. 1 is a schematic structural view of a pixel of a preferred embodiment of a liquid crystal display of the present invention
  • FIG. 2 is an equivalent circuit diagram of a pixel of a preferred embodiment of the liquid crystal display of the present invention.
  • FIG 3 is a schematic view showing tilting of pixels and liquid crystal molecules in a preferred embodiment of the liquid crystal display of the present invention.
  • FIG. 1 is a schematic structural diagram of a pixel of a liquid crystal display according to the present invention
  • FIG. 2 is an equivalent circuit diagram of a pixel of a first preferred embodiment of the liquid crystal display of the present invention
  • the present invention provides a liquid crystal display.
  • the liquid crystal display device 100 includes a first substrate (not shown), a second substrate (not shown), and liquid crystal molecules (not shown) disposed between the first substrate and the second substrate.
  • the first substrate has a plurality of data lines 110, a plurality of scan lines 120, and a plurality of pixels 130 disposed at intersections of the scan lines 120 and the data lines 110, wherein each of the pixels 130 includes a main pixel 131 and a primary pixel. 132.
  • the main pixel 131 includes a main thin film field effect transistor 1311, a main common electrode 1314, a first main transparent electrode layer (not shown) disposed on the first substrate, and a second main transparent electrode layer disposed on the second substrate (not shown)
  • the first main transparent electrode layer and the second main transparent electrode layer form a main liquid crystal capacitor 1312
  • the first main transparent electrode layer and the main common electrode 1314 form a main storage capacitor 1313.
  • the main thin film field effect transistor 1311 includes a gate, an input terminal (eg, a source), and an output terminal (eg, a drain) (not shown), and a gate of the main thin film field effect transistor 1311 is connected to the corresponding scan line 120.
  • the input end of the main thin film field effect transistor 1311 is connected to the corresponding data line 110, the output end of the main thin film field effect transistor 1311 is connected to the first main transparent electrode, and the other end of the main storage capacitor 1313 is connected to the main common end 1315.
  • the terminal 1315 is connected to the main common electrode 1314.
  • the channel width-to-length ratio of the main thin film field effect transistor 1311 is preferably 42/5.5-46/5.5
  • the capacitance value of the main liquid crystal capacitor 1312 is preferably 0.576-0.904
  • the capacitance of the main storage capacitor 1313 is preferably 0.761-0.764. law.
  • the sub-pixel 132 includes a secondary thin film field effect transistor 1321, a secondary common electrode 1324, a first transparent electrode layer (not shown) disposed on the first substrate, and a second transparent electrode layer disposed on the second substrate (not shown)
  • the first transparent electrode layer and the second transparent electrode layer form a secondary liquid crystal capacitor 1322
  • the first transparent electrode layer and the secondary common electrode 1324 form a secondary storage capacitor 1323.
  • the secondary thin film field effect transistor 1321 includes a gate, an input terminal (eg, a source), and an output terminal (eg, a drain), and a gate of the secondary thin film field effect transistor 1321 is connected to a corresponding scan line 120, and a sub-thin field effect transistor
  • the input end of the 1321 is connected to the corresponding data line 110
  • the output end of the secondary thin film field effect transistor 1321 is connected to the first transparent electrode
  • the other end of the secondary storage capacitor 1323 is connected to the secondary common end 1325
  • the secondary common end 1325 is sub-common The electrodes 1324 are connected.
  • the channel width-to-length ratio of the secondary thin film field effect transistor 1321 is preferably 51/5.5-64/5.5
  • the capacitance value of the secondary liquid crystal capacitor 1322 is preferably 0.522-0.783 picofarads
  • the capacitance value of the secondary storage capacitor 1323 is preferably 0- 0.24 picofarad.
  • the main liquid crystal capacitor 1312 is used to deflect liquid crystal molecules in the main pixel 131
  • the sub liquid crystal capacitor 1322 is used to deflect liquid crystal molecules in the sub-pixel 132
  • the main storage capacitor 1313 is used to hold the main liquid.
  • the voltage value on the liquid crystal capacitor 1312, the secondary storage capacitor 1323 is used to maintain the voltage value on the secondary liquid crystal capacitor 1322.
  • the main thin film field effect transistor 1311 and the sub-thin field effect transistor 1321 are turned on, and the data line 110 is supplied to the main liquid crystal capacitor 1312 and the main storage capacitor through the main thin film field effect transistor 1311.
  • the 1313 is charged, and the data line 110 charges the secondary liquid crystal capacitor 1322 and the secondary storage capacitor 1323 through the secondary thin film field effect transistor 1321.
  • the charging speed of the sub-pixel 132 is faster than the charging speed of the main pixel 131, so that the sub-pixel 132 is in the charging stage.
  • the brightness will be higher than the brightness of the main pixel 131.
  • the main thin film field effect transistor 1311 and the sub-thin field effect transistor 1321 are turned off, but since the main thin film field effect transistor 1311 and the sub-thin field effect transistor 1321 cannot be completely turned off, the scanning to the scanning line is stopped.
  • the main thin film field effect transistor 1311 and the secondary thin film field effect transistor 1321 have leakage current, and the charge stored by the main liquid crystal capacitor 1312 and the main storage capacitor 1313 is discharged through the main thin film field effect transistor 1311, and the sub liquid crystal capacitor 1322 and times. The charge stored by the storage capacitor 1323 is released through the sub-thin field effect transistor 1321.
  • the leakage speed of the sub-pixel 132 is faster than the leakage speed of the main pixel 131, resulting in the main pixel appearing in the discharge phase.
  • the brightness of 131 will be higher than the brightness of sub-pixel 132.
  • the capacitance value of the sub liquid crystal capacitor 1322 is smaller than the capacitance value of the main liquid crystal capacitor 1312. Since the channel width of the secondary thin film field effect transistor 1321 is relatively large, when the pixel 130 is charged, the charging speed of the sub-pixel 132 is faster, and the capacitance of the corresponding sub-liquid crystal capacitor 1322 of the sub-pixel 132 is smaller. The voltage of the liquid crystal capacitor 1322 can quickly reach the set voltage value, thereby increasing the response speed of the liquid crystal molecules disposed between the sub liquid crystal capacitors 1322, and further increasing the luminance difference between the main pixel 131 and the sub-pixel 132.
  • the capacitance value of the sub-liquid crystal capacitor 1322 is small, the charge leakage of the sub-pixel 132 can be accelerated, the response speed of the liquid crystal molecules is improved, and the brightness difference between the main pixel 131 and the sub-pixel 132 is increased.
  • the channel width-to-length ratio of the main thin film field effect transistor 1311 is smaller than the channel width-to-length ratio of the sub-thin field effect transistor 1321, and the capacitance values of the main liquid crystal capacitor 1312 and the main storage capacitor 1313 correspond to greater than the sub-liquid crystal capacitance, respectively.
  • the capacitance value of the first storage capacitor 1323 is smaller than the channel width-to-length ratio of the sub-thin field effect transistor 1321, and the capacitance values of the main liquid crystal capacitor 1312 and the main storage capacitor 1313 correspond to greater than the sub-liquid crystal capacitance, respectively.
  • the channel width-to-length ratio of the main thin film field effect transistor 1311 may be larger than the channel width-to-length ratio of the sub-thin field effect transistor 1321, and the capacitance values of the main liquid crystal capacitor 1312 and the main storage capacitor 1313 may be respectively Corresponding to the capacitance value smaller than the secondary liquid crystal capacitor 1322 and the secondary storage capacitor 1323, as long as the channel width of the main thin film field effect transistor 1311, the capacitance value of the main liquid crystal capacitor 1312, the capacitance value of the main storage capacitor 1313, and the sub-thin field effect transistor 1321
  • the channel width-to-length ratio, the capacitance value of the sub liquid crystal capacitor 1322, and the capacitance value of the sub storage capacitor 1323 may be different.
  • the main film field effect transistor 1311 and the sub-thin field effect transistor 1321 of the pixel 130 of the liquid crystal display 100 of the present invention have different channel width to length ratios, so that the voltage states of the main pixel 131 and the sub-pixel 132 of the pixel 130 are different when charged and discharged.
  • the thin film field effect transistor with a small channel length and small size has a small conductive factor, so that the charging and discharging speeds of the corresponding sub-pixels are relatively slow, so that the deflection speed of the liquid crystal molecules is relatively slow, and the channel width and length are relatively small.
  • the sub-pixels (primary pixel 131 or sub-pixel 132) of the thin film field effect transistor are darker when charged and brighter when discharged.
  • the capacitance value of the secondary storage capacitor 1323 is smaller than the capacitance value of the primary storage capacitor 1313.
  • the decrease in the capacitance value of the secondary storage capacitor 1323 reduces the charge retention capability of the secondary liquid crystal capacitor 1322, further accelerating the charge leakage when the sub-pixel 132 is discharged, and increasing the luminance difference between the main pixel 131 and the sub-pixel 132, while
  • the smaller design of the secondary storage capacitor 1323 can improve the light transmissive area of the display panel and increase the aperture ratio of the display panel.
  • the secondary storage capacitor 1323 has a capacitance value of 0, that is, the secondary common electrode 1324 forming the secondary storage capacitor 1323 is not disposed, so that the light transmissive area of the display panel can be maximized, thereby maximizing the aperture ratio of the display panel.
  • a preferred embodiment of the liquid crystal display of the present invention is shown in the schematic diagram of the tilt of the pixel and the liquid crystal molecules of the preferred embodiment of the liquid crystal display of the present invention shown in FIG.
  • An alignment layer (not shown) that controls the deflection directions of the liquid crystal molecules in the main pixel 131 and the sub-pixel 132 is disposed on the transparent electrode layer of the liquid crystal display 100.
  • the same protrusion is etched on the surface of the transparent electrode layer of the main pixel 131 and the sub-pixel 132, thereby forming an alignment layer using a four-domain division technique on the surface of the transparent electrode layer, the alignment layer having four rows
  • the liquid crystal molecules of each row upward are deflected at different angles. If the pixel driving is performed by the existing driving method, the voltages of the main pixel 131 and the sub-pixel 132 are consistent at the time of charging and discharging, The liquid crystal display 100 can only achieve four-domain division of a single pixel.
  • the liquid crystal display 100 of the present invention has a channel width-to-length ratio of the main thin film field effect transistor of the main pixel 131 which is different from the channel width-to-length ratio of the sub-pixel FET of the corresponding sub-pixel 132 of the pixel.
  • the voltage applied to the transparent electrode layer is such that the angle between the liquid crystal molecules of the main pixel 131 and the vertical direction is ⁇ A
  • the angle between the liquid crystal molecules of the sub-pixel 132 and the vertical direction is ⁇ B ( ⁇ A is not equal to ⁇ B)
  • the present invention divides the four domains of the transparent electrode layer of the pixel 130 by providing the main thin film field effect transistor 1311 of the main pixel 131 of different channel width and the sub-thin field effect transistor 1321 of the sub-pixel 132. In this case, the eight-domain division when the pixel 130 is displayed can be realized.
  • the driving circuit of the present invention is simple, and the aperture ratio of the liquid crystal display is also improved.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Spectroscopy & Molecular Physics (AREA)

Abstract

一种液晶显示器，包括多条数据线（110）、多条扫描线（120）以及设置在扫描线与数据线相互交错处的多个像素（130），像素包括主像素（131）和次像素（132），主像素包括主薄膜场效应晶体管（1311），次像素包括次薄膜场效应晶体管（1321），主薄膜场效应晶体管的沟道宽长比与次薄膜场效应晶体管的沟道宽长比不同。

Description

液晶显示器 技术领域
本发明涉及液晶显示领域，特别是涉及一种广视角的液晶显示器。
 背景技术
液晶显示器的可视视角一直是衡量液晶显示器好坏的一个关键性指标，为了解决大视角条件下液晶显示器的色偏（Color Washout）的问题，液晶显示器的广视角技术运用而生。像素区域的配向分割技术是VA（Vertical Aligment：垂直配向）模式的液晶显示器所广泛采用的一种广视角技术，通过将每个像素区域划分为多个配向区域，由于每个配向区域的液晶分子的偏转角度不同，从而形成更大的可视视角。该广视角技术主要有四畴划分和八畴划分两种模式。其中市面上正在使用的八畴划分技术主要有两大类：共电极电压调变（Com-Swing）和充电共享（Charge Sharing），但这两类技术均具有驱动电路复杂和开口率低的缺陷。
故，有必要提供一种液晶显示器，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种通过对主次像素采用不同的沟道宽长比的薄膜场效应晶体管实现像素的八畴划分的液晶显示器，以解决现有的液晶显示器的八畴划分技术的驱动电路复杂、开口率低的技术问题。
 技术解决方案
本发明涉及一种液晶显示器，包括多条数据线、多条扫描线以及设置在所述扫描线与所述数据线相互交错处的多个像素，其特征在于，所述像素包括主像素和次像素，所述主像素包括主薄膜场效应晶体管，所述次像素包括次薄膜场效应晶体管，所述主薄膜场效应晶体管的沟道宽长比与所述次薄膜场效应晶体管的沟道宽长比不同；所述液晶显示器的透明电极层上设置有控制所述主像素和所述次像素中的液晶分子偏转方向的配向层。
本发明还涉及一种液晶显示器，包括多条数据线、多条扫描线以及设置在所述扫描线与所述数据线相互交错处的多个像素，其中所述像素包括主像素和次像素，所述主像素包括主薄膜场效应晶体管，所述次像素包括次薄膜场效应晶体管，所述主薄膜场效应晶体管的沟道宽长比与所述次薄膜场效应晶体管的沟道宽长比不同。
在本发明所述的液晶显示器中，所述主薄膜场效应晶体管的沟道宽长比为42/5.5至46/5.5，所述次薄膜场效应晶体管得沟道宽长比为51/5.5至64/5.5。
在本发明所述的液晶显示器中，所述液晶显示器包括多个液晶分子；所述主像素还包括用于使所述主像素中的液晶分子发生偏转的主液晶电容；所述次像素还包括用于使所述次像素中的液晶分子发生偏转的次液晶电容；所述次液晶电容的电容值与所述主液晶电容的电容值不同。
在本发明所述的液晶显示器中，所述主液晶电容的电容值为0.576-0.904皮法，所述次液晶电容的电容值为0.522-0.783皮法。
在本发明所述的液晶显示器中，所述主像素还包括用于保持所述主液晶电容上的电压值的主存储电容；所述次像素还包括用于保持所述次液晶电容上的电压值的次存储电容；所述次存储电容的电容值与所述主存储电容的电容值不同。
在本发明所述的液晶显示器中，所述主存储电容的电容值为0.761-0.764皮法，所述次存储电容的电容值为0-0.24皮法。
在本发明所述的液晶显示器中，所述主像素还包括主公共电极、第一主透明电极层以及第二主透明电极层，所述第一主透明电极层和所述第二主透明电极层形成所述主液晶电容，所述第一主透明电极层与所述主公共电极形成所述主存储电容。
在本发明所述的液晶显示器中，所述主薄膜场效应晶体管具有栅极、输入端及输出端；所述栅极与相应的扫描线连接，所述输入端与相应的数据线连接，所述输出端与所述第一主透明电极连接。
在本发明所述的液晶显示器中，所述次像素还包括次公共电极、第一次透明电极层以及第二次透明电极层，所述第一次透明电极层和所述第二次透明电极层形成所述次液晶电容，所述第一次透明电极层与所述次公共电极形成所述次存储电容。
在本发明所述的液晶显示器中，所述次薄膜场效应晶体管具有栅极、输入端及输出端；所述栅极与相应的扫描线连接，所述输入端与相应的数据线连接，所述输出端与所述第一次透明电极连接。
本发明还涉及一种液晶显示器，包括多条数据线、多条扫描线以及设置在所述扫描线与所述数据线相互交错处的多个像素，其特征在于，所述像素包括主像素和次像素，所述主像素包括主薄膜场效应晶体管、用于使所述主像素中的液晶分子发生偏转的主液晶电容以及用于保持所述主液晶电容上的电压值的主存储电容，所述次像素包括次薄膜场效应晶体管、用于使所述次像素中的液晶分子发生偏转的次液晶电容以及用于保持所述次液晶电容上的电压值的次存储电容；所述主薄膜场效应晶体管的沟道宽长比为42/5.5至46/5.5，所述次薄膜场效应晶体管的沟道宽长比为51/5.5至64/5.5；所述次液晶电容的电容值与所述主液晶电容的电容值不同；所述次存储电容的电容值与所述主存储电容的电容值不同。
在本发明所述的液晶显示器中，所述主存储电容的电容值为0.761-0.764皮法，所述次存储电容的电容值为0-0.24皮法。
在本发明所述的液晶显示器中，所述主液晶电容的电容值为0.576-0.904皮法，所述次液晶电容的电容值为0.522-0.783皮法。
在本发明所述的液晶显示器中，所述液晶显示器的透明电极层上设置有控制所述主像素和所述次像素中的液晶分子偏转方向的配向层。
 有益效果
通过对主次像素采用不同的沟道宽长比的薄膜场效应晶体管实现像素的八畴划分，解决了现有的液晶显示器的八畴划分技术的驱动电路复杂、开口率低的技术问题。
附图说明
图1为本发明的液晶显示器的优选实施例的像素的结构示意图；
图2为本发明的液晶显示器的优选实施例的像素的等效电路图；
图3为本发明的液晶显示器的优选实施例的像素及液晶分子倾斜的示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。在图中，结构相似的单元是以相同标号表示。
请参阅图1及图2，图1为本发明的液晶显示器的像素的结构示意图，图2为本发明的液晶显示器的第一优选实施例的像素的等效电路图，本发明提供一种液晶显示器100，该液晶显示器100包括第一基板（图未示）、第二基板（图未示）及设置在第一基板与第二基板之间的液晶分子（图未示）。所述第一基板上具有多条数据线110、多条扫描线120以及多个设置在扫描线120和数据线110相互交错处的像素130，其中每个像素130包括一主像素131和一次像素132。
主像素131包括主薄膜场效应晶体管1311、主公共电极1314、设置在第一基板的第一主透明电极层（图未示）以及设置在第二基板的第二主透明电极层（图未示）；所述第一主透明电极层与第二主透明电极层形成主液晶电容1312，所述第一主透明电极层与主公共电极1314形成主存储电容1313。主薄膜场效应晶体管1311包括栅极、输入端（例如源极）及输出端（例如漏极）（图未示），所述主薄膜场效应晶体管1311的栅极与相应的扫描线120连接，主薄膜场效应晶体管1311的输入端与相应的数据线110连接，主薄膜场效应晶体管1311的输出端与第一主透明电极连接，主存储电容1313的另一端与主公共端1315连接，主公共端1315与主公共电极1314连接。主薄膜场效应晶体管1311的沟道宽长比优选为42/5.5-46/5.5，主液晶电容1312的电容值优选为0.576-0.904皮法，主存储电容1313的电容值优选为0.761-0.764皮法。
次像素132包括次薄膜场效应晶体管1321、次公共电极1324、设置在第一基板的第一次透明电极层（图未示）以及设置在第二基板的第二次透明电极层（图未示）；所述第一次透明电极层与第二次透明电极层形成次液晶电容1322，所述第一次透明电极层与次公共电极1324形成次存储电容1323。次薄膜场效应晶体管1321包括栅极、输入端（例如源极）及输出端（例如漏极），所述次薄膜场效应晶体管1321的栅极与相应的扫描线120连接，次薄膜场效应晶体管1321的输入端与相应的数据线110连接，次薄膜场效应晶体管1321的输出端与第一次透明电极连接，次存储电容1323的另一端与次公共端1325连接，次公共端1325与次公共电极1324连接。所述次薄膜场效应晶体管1321的沟道宽长比优选为51/5.5-64/5.5，次液晶电容1322的电容值优选为0.522-0.783皮法，次存储电容1323的电容值优选为0-0.24皮法。
所述主液晶电容1312用于使所述主像素131中的液晶分子发生偏转，次液晶电容1322用于使所述次像素132中的液晶分子发生偏转，主存储电容1313用于保持所述主液晶电容1312上的电压值，次存储电容1323用于保持所述次液晶电容1322上的电压值。
如图2所示，当对扫描线120施加电压时，主薄膜场效应晶体管1311和次薄膜场效应晶体管1321导通，数据线110通过主薄膜场效应晶体管1311给主液晶电容1312和主存储电容1313充电，数据线110通过次薄膜场效应晶体管1321给次液晶电容1322和次存储电容1323充电。由于主薄膜场效应晶体管1311的沟道宽长比小于次薄膜场效应晶体管1321的沟道宽长比，所以次像素132的充电速度比主像素131的充电速度快，使得在充电阶段次像素132的亮度会高于主像素131的亮度。
当停止向扫描线120施加电压时，主薄膜场效应晶体管1311和次薄膜场效应晶体管1321关闭，但由于主薄膜场效应晶体管1311和次薄膜场效应晶体管1321不能达到完全关闭，在停止向扫描线120施加电压时，主薄膜场效应晶体管1311和次薄膜场效应晶体管1321存在漏电流，主液晶电容1312和主存储电容1313存储的电荷会通过主薄膜场效应晶体管1311释放，次液晶电容1322和次存储电容1323存储的电荷会通过次薄膜场效应晶体管1321释放。因为主薄膜场效应晶体管1311的沟道宽长比小于次薄膜场效应晶体管1321的沟道宽长比，所以次像素132的漏电速度比主像素131的漏电速度快，导致在放电阶段出现主像素131的亮度会高于次像素132的亮度。
作为本发明的液晶显示器的第一优选实施例，次液晶电容1322的电容值小于主液晶电容1312的电容值。由于次薄膜场效应晶体管1321的沟道宽长比较大，当像素130充电时，会使得次像素132的充电速度较快，并且次像素132相应的次液晶电容1322的电容值较小，使得次液晶电容1322的电压能够迅速达到设定的电压值，从而提高设置在次液晶电容1322间的液晶分子的响应速度，进一步加大主像素131和次像素132之间的亮度差异。当次像素130放电时，次液晶电容1322的电容值较小，可以加快次像素132的电荷泄露，提高了液晶分子的响应速度，加大了主像素131和次像素132之间的亮度差异。
在本实施例中，主薄膜场效应晶体管1311的沟道宽长比小于次薄膜场效应晶体管1321的沟道宽长比，主液晶电容1312、主存储电容1313的电容值分别对应大于次液晶电容1322、次存储电容1323的电容值。当然，在其他实施例中，也可设置主薄膜场效应晶体管1311的沟道宽长比大于次薄膜场效应晶体管1321的沟道宽长比，主液晶电容1312、主存储电容1313的电容值分别对应小于次液晶电容1322、次存储电容1323的电容值，只要主薄膜场效应晶体管1311的沟道宽长、主液晶电容1312的电容值、主存储电容1313的电容值与次薄膜场效应晶体管1321的沟道宽长比、次液晶电容1322的电容值、次存储电容1323的电容值对应不同即可。
本发明的液晶显示器100的像素130的主薄膜场效应晶体管1311和次薄膜场效应晶体管1321的沟道宽长比不同，使得像素130的主像素131和次像素132充电和放电时电压状态产生差别，沟道宽长比较小的薄膜场效应晶体管的导电因子较小，造成其对应的子像素的充电和放电速度比较慢，从而液晶分子的偏转速度也会比较慢，沟道宽长比较小的薄膜场效应晶体管的子像素（主像素131或次像素132）在充电时较暗，而在放电时较亮。
作为本发明的液晶显示器的优选实施例，次存储电容1323的电容值小于主存储电容1313的电容值。次存储电容1323的电容值的减小降低了次液晶电容1322的电荷保持能力，进一步加快了次像素132放电时的电荷泄露，加大了主像素131和次像素132之间的亮度差异，同时将次存储电容1323设计的较小，可以提高显示面板的可透光面积，提高显示面板的开口率。优选的，次存储电容1323的电容值为0，即不设置形成次存储电容1323的次公共电极1324，可使显示面板的可透光面积最大，从而使显示面板的开口率最大。
作为本发明的液晶显示器的优选实施例，在图3所示的本发明的液晶显示器的优选实施例的像素及液晶分子倾斜的示意图中。液晶显示器100的透明电极层上设置有控制主像素131和次像素132中的液晶分子偏转方向的配向层（图未示）。
如图3所示，在主像素131和次像素132的透明电极层表面刻蚀出相同的突出物，从而在透明电极层表面形成使用四畴划分技术的配向层，该配向层具有四种排向，在子像素充放电时每种排向上的液晶分子都会偏转不同的角度，如采用现有的驱动方法进行像素驱动，主像素131和次像素132在充放电时的电压一直保持一致，则该液晶显示器100只能实现单像素的四畴划分。本发明的液晶显示器100由于主像素131的主薄膜场效应晶体管的沟道宽长比不同于该像素相应的次像素132的次薄膜场效应晶体管的沟道宽长比。当在透明电极层施加的电压使得主像素131的液晶分子与垂直方向的夹角为ӨA时，次像素132的液晶分子与垂直方向的夹角则为ӨB（ӨA不等于ӨB），这样使得主像素131和次像素132的亮度不一致，从而简单的实现了单像素的八畴划分，最终通过人眼对主像素131和次像素132的亮度的合成达到扩大视角的作用。
综上所述，本发明通过设置不同的沟道宽长的主像素131的主薄膜场效应晶体管1311和次像素132的次薄膜场效应晶体管1321，使得在像素130的透明电极层四畴划分的情况下，即可实现了该像素130显示时八畴划分。相比于现有技术，本发明的驱动电路简单，也提高了液晶显示器的开口率。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
 本发明的实施方式
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Claims (20)

  1. 一种液晶显示器，包括多条数据线、多条扫描线以及设置在所述扫描线与所述数据线相互交错处的多个像素，其特征在于，所述像素包括主像素和次像素，所述主像素包括主薄膜场效应晶体管，所述次像素包括次薄膜场效应晶体管，所述主薄膜场效应晶体管的沟道宽长比与所述次薄膜场效应晶体管的沟道宽长比不同；
    所述液晶显示器的透明电极层上设置有控制所述主像素和所述次像素中的液晶分子偏转方向的配向层。
  2. 根据权利要求1所述的液晶显示器，其特征在于，所述主薄膜场效应晶体管的沟道宽长比为42/5.5至46/5.5，所述次薄膜场效应晶体管得沟道宽长比为51/5.5至64/5.5。
  3. 根据权利要求1所述的液晶显示器，其特征在于，所述液晶显示器包括多个液晶分子；
    所述主像素还包括用于使所述主像素中的液晶分子发生偏转的主液晶电容；
    所述次像素还包括用于使所述次像素中的液晶分子发生偏转的次液晶电容；
    所述次液晶电容的电容值与所述主液晶电容的电容值不同。
  4. 根据权利要求3所述的液晶显示器，其特征在于，所述主液晶电容的电容值为0.576-0.904皮法，所述次液晶电容的电容值为0.522-0.783皮法。
  5. 根据权利要求3所述的液晶显示器，其特征在于，
    所述主像素还包括用于保持所述主液晶电容上的电压值的主存储电容；
    所述次像素还包括用于保持所述次液晶电容上的电压值的次存储电容；
    所述次存储电容的电容值与所述主存储电容的电容值不同。
  6. 根据权利要求5所述的液晶显示器，其特征在于，
    所述主存储电容的电容值为0.761-0.764皮法，所述次存储电容的电容值为0-0.24皮法。
  7. 一种液晶显示器，包括多条数据线、多条扫描线以及设置在所述扫描线与所述数据线相互交错处的多个像素，其特征在于，所述像素包括主像素和次像素，所述主像素包括主薄膜场效应晶体管，所述次像素包括次薄膜场效应晶体管，所述主薄膜场效应晶体管的沟道宽长比与所述次薄膜场效应晶体管的沟道宽长比不同。
  8. 根据权利要求7所述的液晶显示器，其特征在于，所述主薄膜场效应晶体管的沟道宽长比为42/5.5至46/5.5，所述次薄膜场效应晶体管得沟道宽长比为51/5.5至64/5.5。
  9. 根据权利要求7所述的液晶显示器，其特征在于，所述液晶显示器包括多个液晶分子；
    所述主像素还包括用于使所述主像素中的液晶分子发生偏转的主液晶电容；
    所述次像素还包括用于使所述次像素中的液晶分子发生偏转的次液晶电容；
    所述次液晶电容的电容值与所述主液晶电容的电容值不同。
  10. 根据权利要求9所述的液晶显示器，其特征在于，所述主液晶电容的电容值为0.576-0.904皮法，所述次液晶电容的电容值为0.522-0.783皮法。
  11. 根据权利要求9所述的液晶显示器，其特征在于，
    所述主像素还包括用于保持所述主液晶电容上的电压值的主存储电容；
    所述次像素还包括用于保持所述次液晶电容上的电压值的次存储电容；
    所述次存储电容的电容值与所述主存储电容的电容值不同。
  12. 根据权利要求11所述的液晶显示器，其特征在于，
    所述主存储电容的电容值为0.761-0.764皮法，所述次存储电容的电容值为0-0.24皮法。
  13. 根据权利要求11所述的液晶显示器，其特征在于，
    所述主像素还包括主公共电极、第一主透明电极层以及第二主透明电极层，所述第一主透明电极层和所述第二主透明电极层形成所述主液晶电容，所述第一主透明电极层与所述主公共电极形成所述主存储电容。
  14. 根据权利要求13所述的液晶显示器，其特征在于，
    所述主薄膜场效应晶体管具有栅极、输入端及输出端；所述栅极与相应的扫描线连接，所述输入端与相应的数据线连接，所述输出端与所述第一主透明电极层连接。
  15. 根据权利要求11所述的液晶显示器，其特征在于，
    所述次像素还包括次公共电极、第一次透明电极层以及第二次透明电极层，所述第一次透明电极层和所述第二次透明电极层形成所述次液晶电容，所述第一次透明电极层与所述次公共电极形成所述次存储电容。
  16. 根据权利要求15所述的液晶显示器，其特征在于，
    所述次薄膜场效应晶体管具有栅极、输入端及输出端，所述栅极与相应的扫描线连接，所述输入端与相应的数据线连接，所述输出端与所述第一次透明电极层连接。
  17. 一种液晶显示器，包括多条数据线、多条扫描线以及设置在所述扫描线与所述数据线相互交错处的多个像素，其特征在于，所述像素包括主像素和次像素，所述主像素包括主薄膜场效应晶体管、用于使所述主像素中的液晶分子发生偏转的主液晶电容以及用于保持所述主液晶电容上的电压值的主存储电容，所述次像素包括次薄膜场效应晶体管、用于使所述次像素中的液晶分子发生偏转的次液晶电容以及用于保持所述次液晶电容上的电压值的次存储电容；
    所述主薄膜场效应晶体管的沟道宽长比为42/5.5至46/5.5，所述次薄膜场效应晶体管的沟道宽长比为51/5.5至64/5.5；
    所述次液晶电容的电容值与所述主液晶电容的电容值不同；
    所述次存储电容的电容值与所述主存储电容的电容值不同。
  18. 根据权利要求17所述的液晶显示器，其特征在于，所述主存储电容的电容值为0.761-0.764皮法，所述次存储电容的电容值为0-0.24皮法。
  19. 根据权利要求17所述的液晶显示器，其特征在于，所述主液晶电容的电容值为0.576-0.904皮法，所述次液晶电容的电容值为0.522-0.783皮法。
  20. 根据权利要求17所述的液晶显示器，其特征在于，所述液晶显示器的透明电极层上设置有控制所述主像素和所述次像素中的液晶分子偏转方向的配向层。
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