WO2013045960A2 - Procedure and device for measuring silicon temperature and over-temperature protection of a power insulated gate bipolar transistor - Google Patents
Procedure and device for measuring silicon temperature and over-temperature protection of a power insulated gate bipolar transistor Download PDFInfo
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- WO2013045960A2 WO2013045960A2 PCT/HR2012/000020 HR2012000020W WO2013045960A2 WO 2013045960 A2 WO2013045960 A2 WO 2013045960A2 HR 2012000020 W HR2012000020 W HR 2012000020W WO 2013045960 A2 WO2013045960 A2 WO 2013045960A2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K2217/00—Temperature measurement using electric or magnetic components already present in the system to be measured
Definitions
- This invention relates to a procedure and device for measuring silicon temperature and over-temperature protection of power insulated gate bipolar transistors, which are used as a switch in power electronic converters and where silicon temperature is an important piece of information.
- Classification symbols representing technical fields according to the International Patent Classification are: H01 H 35/00, H03K 3/42 and G01K 7/00.
- Power insulated gate bipolar transistors or transistors are basic semiconductor valves in contemporary power electronic converters.
- Silicon temperature is an important value in designing electronic power converters.
- the converters are designed so that the transistor silicon temperature in operation is always lower than the maximum allowed transistor silicon temperature.
- the converters are designed with a certain reservation as regards the maximum allowed silicon temperature. This reservation is often significant because it is difficult to determine the toughest power conditions relevant to dimensioning.
- Measuring transistor silicon temperature in operating conditions is also important because of the possibility of silicon over-temperature protection with which higher converter reliability can be achieved.
- the possibility of measuring transistor silicon temperature in operating conditions can be used for checking or determining conditions relevant for dimensioning of the converter.
- Indirect methods are based on the temperature dependency of a particular transistor electric parameter. By previous calibrating, and later measuring of that parameter, the silicon temperature is measured indirectly. By indirect methods the silicon plate temperature is determined in a closed transistor, without prior preparation of the transistor. The methods are applicable to measuring in operating conditions, in larger series and are not destructive.
- the state of the art includes indirect method for determining transistor silicon temperature by measuring threshold voltage in a way that in the warm-up phase the load current flows through the transistor and the small current flows through it in the measuring phase with which threshold voltage is defined. This way of measuring threshold voltage is applicable to laboratory conditions with required measuring equipment and not to operating conditions.
- Silicon temperature of a power insulated gate bipolar transistor is measured by measuring threshold voltage.
- Threshold voltage is measured by measuring the voltage between the gate and the emitter at the moment at which the transistor starts conducting. The transistor conduction is determined by voltage detection between control and power emitter connections.
- the threshold voltage is defined through certain collector current.
- Threshold voltage linearly decreases with an increase of transistor silicon temperature, for approximately 9 mV/K.
- the silicon temperature is determined from the measured threshold voltage, i.e. calibration is performed.
- the value of threshold voltage at the same temperature is different for different samples and types of transistors.
- Threshold voltage for all transistors with an isolated control electrode linearly decreases with an increase of transistor silicon temperature.
- To define the relation between the silicon temperature and threshold voltage for a particular transistor it is enough to measure using the currently known method threshold voltage at room temperature and take into account temperature dependency of such voltage of approximately 9 mV/K. For more accurate measurement, threshold voltage can be measured using the known method at some other temperature and linear dependency for this transistor is defined through the two measured points.
- the threshold voltage is measured at the moment of voltage detection between the control and power connections of the transistor emitter. Silicon temperature is established from the threshold voltage measured in such a way on the grounds of pre-determined threshold voltage temperature dependency for a certain transistor. Silicon temperature is measured through a circuit which is on the transistor emitter potential on which a driver is also located.
- the invention is applicable to operating conditions in real time and does not require a special transistor adjustment.
- This invention can be used for silicon over-temperature protection and for measuring virtual silicon temperature of a power insulated gate bipolar transistors.
- Fig. 1 shows a diagram of threshold voltage dependency on silicon temperature of power insulated gate bipolar transistors at higher and lower silicon temperatures.
- Fig. 2 shows a block diagram of a device for measuring silicon temperature and over- temperature protection of a power insulated gate bipolar transistors.
- Fig. 3 shows a block diagram of another way for carrying out a circuit 3 of the device for measuring silicon temperature and over-temperature protection of power insulated gate bipolar transistors.
- a power insulated gate bipolar transistor works as a switch, i.e. it is either in a conducting state or in a non-conducting state.
- turning transistor on and off is achieved through a driver and in accordance with control signal for turning on and off which emanates from superior control.
- the output part of the driver enables the necessary positive voltage between the gate connection and the control emitter of the transistor and it goes into conducting state.
- the output part of the driver brings down the voltage between the gate connection and the control emitter of the transistor and it goes into non-conducting state.
- the voltage between the gate connection and the control emitter of the transistor grows toward the set value.
- threshold voltage At the moment at which the current starts flowing between the collector connection and transistor emitter, the voltage between the gate and the control emitter approximately corresponds to threshold voltage.
- the exact value of threshold voltage is catalogue defined with a specific current between the collector and the emitter and it is measured in such a way in laboratory conditions. For determining silicon temperature in operating conditions it is sufficient to determine a moment in conduction and at that moment determine the voltage between the gate connection and the control emitter which approximately corresponds to threshold voltage. This threshold voltage value is linearly dependent on silicon temperature and roughly changes with 9 mV/K, as the exact threshold voltage value also changes when measured at defined current through the transistor.
- the moment at which the current starts flowing through the transistor is determined by voltage detection between the control and energy emitter connections i.e. by measuring voltage on parasitic inductivity between the two connections which is always present at the physical embodiment of the transistor.
- a condition is defined after which at turning on the transistor that voltage is detected. That condition is a specified positive voltage value between the gate and the transistor control emitter, but it can be something else too.
- Over-temperature protection is provided by checking whether, at the moment of voltage detection between the control and power connections of the emitter, the voltage value between the gate and control emitter at turning on is bigger or smaller than the value which corresponds to the set level at which protection is actuated.
- threshold voltage can also be measured using the described method at another usual temperature and linear dependency for that particular transistor is defined using the two measured points. If the voltage between the gate and the emitter is lower than the set level at which protection is actuated during turning on and at the moment of voltage detection between the control and energy emitter connections, silicon temperature is higher than allowed. This information is forwarded to superior electronics and to driver for turning on and off the transistor which then gives the order to turn off the transistor.
- Transistor silicon temperature measurement in real time and over-temperature protection can also be done by using the following procedure. At the moment of voltage detection between the control and power emitters and at turning on the transistor, voltage between the gate and the control emitter is measured and recorded. This voltage is converted using analogue-digital conversion into digital data which is, together with previously established threshold voltage temperature dependency for that transistor, recorded as the measured transistor silicon temperature and forwarded to superior electronics. Measured voltage between the gate and the control emitter can be compared to the value which corresponds to the level of actuation of over-temperature protection before the analogue-digital conversion. If this voltage is lower than the set level at which protection is actuated, transistor silicon temperature is higher than allowed. This information is forwarded to superior electronics and to driver for turning on and off the transistor which then gives the order to turn off the transistor.
- Fig. 2 shows a block diagram of a device for measuring silicon temperature and over- temperature protection of a power insulated gate bipolar transistors.
- Device 1 consists of circuit 2 for voltage detection on parasitic inductance 31 between control E' and power E transistor emitter connections at the moment at which the current starts flowing between the collector C and energy emitter E connections of transistor 20, circuit 3 for over-temperature protection and silicon temperature measurement, and circuit 4 for turning on and off transistor 20.
- Circuit 2 consists of comparator 5 whose non-inverting input is connected to gate G connection of transistor 20 and power source 6 connected to inverting comparator 5 input which determines the level at which the comparator 5 changes state.
- Inverting comparator 7 input from circuit 2 is connected to energy emitter E connection of transistor 20, and power source 8, connected to non-inverting comparator 7 connection determines the level of voltage detection between control E' and energy emitter E connection at which the comparator 7 changes state to avoid interference effect.
- Logic AND gate 9 from circuit 2 has inputs connected to comparator 5 and 7 outputs. Logic AND gate 9 output is connected through point 27 to logic Nl gate 12 input from circuit 3.
- Circuit 3 contains comparator 10 whose non-inverting input is connected to gate G connection of transistor 20 and power source 11 is connected to inverting comparator 10 input, which determines the level at which the comparator 10 changes state and that level corresponds to the level at which over-temperature protection starts functioning.
- Comparator 10 output from circuit 3 is connected to logic Nl gate 12 input.
- Logic Nl gate 12 output is connected to Cp bistable 13 input.
- Bistable 13 input D is connected to voltage supply Vcc.
- Bistable 13 reset R is connected to logic inverter 14 output whose input is connected through point 29 to the control signal for turning on and off 18.
- Bistable 13 output Q represents the data on over-temperature 19. This over- temperature data is through point 28 the input to logic inverter 15 of circuit 4.
- Logic inverter 15 output is connected to logic AND gate 16 input whose second output is connected to the control signal for turning on and off.
- Logic AND gate output is connected to input of the exit part of gate driver 17 of circuit 4.
- Gate driver 17 output is connected to gate G connection of transistor 20. Exit part of gate driver 17 is connected to supply Vcc, and control emitter E' to the mass of this supply.
- Fig. 3 shows a block diagram of alternative circuit 3 for over-temperature protection and measuring transistor 20 silicon temperature.
- Bistable 25 Cp input is connected to logic AND gate 9 output, referred to in Figure 2.
- Alternative circuit 3 is connected to device 1 referred to in Figure 1 at points 27, 28, G and 29.
- Bistable 25 input D is connected to voltage supply Vcc.
- Bistable 25 reset R is connected to logic inverter 26 output whose input is connected to the control signal for turning on and off of transistor 20.
- Bistable 25 output Q is connected to sample and hold sub circuit 21.
- Sub circuit 21 output is connected to analogue to digital conversion sub circuit 22 and to over- temperature protection sub circuit 23.
- Sub circuit 23 output gives information about over-temperature 19 and is connected to circuit 4 logic inverter 15 input referred to in Figure 2, at point 28.
- Sub circuit 22 output is connected to memory sub circuit 24 input.
- Sub circuit 24 output of connection 30 contains information about measured threshold voltages or transistor 20 silicon temperatures in real time.
- the invention can be applied in operational conditions for silicon over-temperature protection and for measuring transistor silicon temperature in real time. In this way higher converter reliability can be achieved.
- the possibility of measuring transistor silicon temperature in operational conditions in real time can be used for checking or determining conditions which are relevant for dimensioning of the converter.
- the device for silicon over-temperature protection and for measuring transistor silicon temperature in real time can be a part of the driver but it can also be made as an addition to already existent drivers.
- Upr/nt - threshold voltage lower temperature Upr/vt - threshold voltage, higher temperature Uge/nt -voltage gate emitter, lower temperature Uge/vt - voltage gate emitter, higher temperature
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Abstract
This invention is based on the fact that the threshold voltage of power insulated gate bipolar transistors linearly decreases with an increase of silicon temperature. Threshold voltage according to this invention is determined through voltage detection between the control and power connections of the transistor emitter. Silicon temperature is determined from the threshold voltage measured in such a way on the basis of the predetermined linear threshold voltage temperature dependency on the silicon temperature for a certain transistor. The measured threshold voltage is used for designing over-temperature protection and for measuring silicon temperature in real time in operational conditions. Fig. 2 shows a block diagram of the device (1) for measuring silicon temperature and over-temperature protection of power insulated gate bipolar transistor (20). The device (1) consists of a circuit (2) for voltage detection between the control and power connections of the transistor emitter, circuit (3) for over- temperature protection and measuring silicon temperature and circuit (4) for turning transistor 20 on and off.
Description
PROCEDURE AND DEVICE FOR MEASURING SILICON TEMPERATURE AND OVER-TEMPERATURE PROTECTION OF A POWER INSULATED GATE BIPOLAR
TRANSISTOR DESCRIPTION OF THE INVENTION
Technical Field
This invention relates to a procedure and device for measuring silicon temperature and over-temperature protection of power insulated gate bipolar transistors, which are used as a switch in power electronic converters and where silicon temperature is an important piece of information. Classification symbols representing technical fields according to the International Patent Classification are: H01 H 35/00, H03K 3/42 and G01K 7/00.
Technical Problem
Power insulated gate bipolar transistors or transistors are basic semiconductor valves in contemporary power electronic converters. Silicon temperature is an important value in designing electronic power converters. The converters are designed so that the transistor silicon temperature in operation is always lower than the maximum allowed transistor silicon temperature. For the purpose of reliability, the converters are designed with a certain reservation as regards the maximum allowed silicon temperature. This reservation is often significant because it is difficult to determine the toughest power conditions relevant to dimensioning.
The consequences of this are transistor loading restrictions and inappropriate use of its characteristics, bigger dimensions, and bigger mass as well as higher price of the converter.
Measuring transistor silicon temperature in operating conditions is also important because of the possibility of silicon over-temperature protection with which higher converter reliability can be achieved. The possibility of measuring transistor silicon temperature in operating conditions can be used for checking or determining conditions relevant for dimensioning of the converter.
All of this enables the transistor use with minor reserve with respect to silicon temperature limit, better transistor use, smaller dimensions, smaller mass, lower price and higher reliability of the converter.
The State of the Art
Today's methods for determining silicon temperature of power insulated gate bipolar transistors can be seen as direct and indirect.
When using direct methods it is necessary to perform certain procedures on the transistor, such as adapting housing, preparing silicon surface or installing sensors close to the silicon plate. Determining transistor silicon temperature by measuring the voltage on the temperature dependent resistor which is installed near the transistor silicon plate is described in patent no. US 2009/0167414 A1.
These changes change, in a way, the temperature characteristics of the mentioned transistor and are not applicable to operating conditions. The most common direct method for measuring silicon temperature is a method using infrared camera, in which case it is necessary to rearrange the housing of the transistor.
Indirect methods are based on the temperature dependency of a particular transistor electric parameter. By previous calibrating, and later measuring of that parameter, the silicon temperature is measured indirectly. By indirect methods the silicon plate temperature is determined in a closed transistor, without prior preparation of the transistor. The methods are applicable to measuring in operating conditions, in larger series and are not destructive.
As temperature dependent electric parameters the following are used: voltage between the collector and the emitter in the transistor conducting state, threshold voltage, voltage change speed between the collector and the emitter during transistor turn off. Determining transistor silicon temperature by measuring voltage change speed between the collector and the emitter during turn off is described in patent no. US 006060792 A.
The state of the art includes indirect method for determining transistor silicon temperature by measuring threshold voltage in a way that in the warm-up phase the load current flows through the transistor and the small current flows through it in the measuring phase with which threshold voltage is defined. This way of measuring threshold voltage is applicable to laboratory conditions with required measuring equipment and not to operating conditions.
Disclosure of the Invention Essence
Silicon temperature of a power insulated gate bipolar transistor is measured by measuring threshold voltage. Threshold voltage is measured by measuring the voltage between the gate and the emitter at the moment at which the transistor starts conducting. The transistor conduction is determined by voltage detection between control and power emitter connections. Usually, the threshold voltage is defined through certain collector current. When measuring in this way, we have a certain deviation from
the standard which defines the value of threshold voltage. Due to the fact that it is not the absolute threshold voltage that is measured according to standards but only its change depending on temperature change, this deviation does not affect the accuracy of the measurement.
Threshold voltage linearly decreases with an increase of transistor silicon temperature, for approximately 9 mV/K. According to the pre-defined relation between silicon temperature and threshold voltage for a specific transistor, the silicon temperature is determined from the measured threshold voltage, i.e. calibration is performed. The value of threshold voltage at the same temperature is different for different samples and types of transistors. Threshold voltage for all transistors with an isolated control electrode linearly decreases with an increase of transistor silicon temperature. To define the relation between the silicon temperature and threshold voltage for a particular transistor it is enough to measure using the currently known method threshold voltage at room temperature and take into account temperature dependency of such voltage of approximately 9 mV/K. For more accurate measurement, threshold voltage can be measured using the known method at some other temperature and linear dependency for this transistor is defined through the two measured points.
Technical novelty of this invention is that the threshold voltage is measured at the moment of voltage detection between the control and power connections of the transistor emitter. Silicon temperature is established from the threshold voltage measured in such a way on the grounds of pre-determined threshold voltage temperature dependency for a certain transistor. Silicon temperature is measured through a circuit which is on the transistor emitter potential on which a driver is also located. The invention is applicable to operating conditions in real time and does not require a special transistor adjustment.
This invention can be used for silicon over-temperature protection and for measuring virtual silicon temperature of a power insulated gate bipolar transistors.
Description of the Drawings
Fig. 1 shows a diagram of threshold voltage dependency on silicon temperature of power insulated gate bipolar transistors at higher and lower silicon temperatures.
Fig. 2 shows a block diagram of a device for measuring silicon temperature and over- temperature protection of a power insulated gate bipolar transistors.
Fig. 3 shows a block diagram of another way for carrying out a circuit 3 of the device for measuring silicon temperature and over-temperature protection of power insulated gate bipolar transistors.
Description of the Invention
1. Description of the Procedure
A power insulated gate bipolar transistor works as a switch, i.e. it is either in a conducting state or in a non-conducting state. As far as it is known, turning transistor on and off is achieved through a driver and in accordance with control signal for turning on and off which emanates from superior control. At turning on, the output part of the driver enables the necessary positive voltage between the gate connection and the control emitter of the transistor and it goes into conducting state. At turn off, the output part of the driver brings down the voltage between the gate connection and the control emitter of the transistor and it goes into non-conducting state. During turning on, the voltage between the gate connection and the control emitter of the transistor grows toward the set value. At the moment at which the current starts flowing between the collector connection and transistor emitter, the voltage between the gate and the control emitter approximately corresponds to threshold voltage. The exact value of threshold voltage is catalogue defined with a specific current between the collector and the emitter and it is measured in such a way in laboratory conditions. For determining silicon temperature in operating conditions it is sufficient to determine a moment in conduction and at that moment determine the voltage between the gate connection and the control emitter which approximately corresponds to threshold voltage. This threshold voltage value is linearly dependent on silicon temperature and roughly changes with 9 mV/K, as the exact threshold voltage value also changes when measured at defined current through the transistor.
The moment at which the current starts flowing through the transistor is determined by voltage detection between the control and energy emitter connections i.e. by measuring voltage on parasitic inductivity between the two connections which is always present at the physical embodiment of the transistor. For the protection against interferences, a condition is defined after which at turning on the transistor that voltage is detected. That condition is a specified positive voltage value between the gate and the transistor control emitter, but it can be something else too. Over-temperature protection is provided by checking whether, at the moment of voltage detection between the control and power connections of the emitter, the voltage value between the gate and control
emitter at turning on is bigger or smaller than the value which corresponds to the set level at which protection is actuated. To define the relation between the silicon temperature and the threshold voltage for a particular transistor i.e. to define the voltage value between the gate and the control emitter which corresponds to the level of actuation of over-temperature protection, it is sufficient to measure the threshold voltage at room temperature using the described method and take into account temperature dependency of that voltage of approximately 9mV/K. For more accurate measurement, threshold voltage can also be measured using the described method at another usual temperature and linear dependency for that particular transistor is defined using the two measured points. If the voltage between the gate and the emitter is lower than the set level at which protection is actuated during turning on and at the moment of voltage detection between the control and energy emitter connections, silicon temperature is higher than allowed. This information is forwarded to superior electronics and to driver for turning on and off the transistor which then gives the order to turn off the transistor. Transistor silicon temperature measurement in real time and over-temperature protection can also be done by using the following procedure. At the moment of voltage detection between the control and power emitters and at turning on the transistor, voltage between the gate and the control emitter is measured and recorded. This voltage is converted using analogue-digital conversion into digital data which is, together with previously established threshold voltage temperature dependency for that transistor, recorded as the measured transistor silicon temperature and forwarded to superior electronics. Measured voltage between the gate and the control emitter can be compared to the value which corresponds to the level of actuation of over-temperature protection before the analogue-digital conversion. If this voltage is lower than the set level at which protection is actuated, transistor silicon temperature is higher than allowed. This information is forwarded to superior electronics and to driver for turning on and off the transistor which then gives the order to turn off the transistor.
2. Description of the Way of Carrying Out the Device
Fig. 2 shows a block diagram of a device for measuring silicon temperature and over- temperature protection of a power insulated gate bipolar transistors.
Device 1 consists of circuit 2 for voltage detection on parasitic inductance 31 between control E' and power E transistor emitter connections at the moment at which the current starts flowing between the collector C and energy emitter E connections of
transistor 20, circuit 3 for over-temperature protection and silicon temperature measurement, and circuit 4 for turning on and off transistor 20.
Circuit 2 consists of comparator 5 whose non-inverting input is connected to gate G connection of transistor 20 and power source 6 connected to inverting comparator 5 input which determines the level at which the comparator 5 changes state. Inverting comparator 7 input from circuit 2 is connected to energy emitter E connection of transistor 20, and power source 8, connected to non-inverting comparator 7 connection determines the level of voltage detection between control E' and energy emitter E connection at which the comparator 7 changes state to avoid interference effect.
Logic AND gate 9 from circuit 2 has inputs connected to comparator 5 and 7 outputs. Logic AND gate 9 output is connected through point 27 to logic Nl gate 12 input from circuit 3. Circuit 3 contains comparator 10 whose non-inverting input is connected to gate G connection of transistor 20 and power source 11 is connected to inverting comparator 10 input, which determines the level at which the comparator 10 changes state and that level corresponds to the level at which over-temperature protection starts functioning. Comparator 10 output from circuit 3 is connected to logic Nl gate 12 input. Logic Nl gate 12 output is connected to Cp bistable 13 input. Bistable 13 input D is connected to voltage supply Vcc. Bistable 13 reset R is connected to logic inverter 14 output whose input is connected through point 29 to the control signal for turning on and off 18. Bistable 13, output Q represents the data on over-temperature 19. This over- temperature data is through point 28 the input to logic inverter 15 of circuit 4. Logic inverter 15 output is connected to logic AND gate 16 input whose second output is connected to the control signal for turning on and off. Logic AND gate output is connected to input of the exit part of gate driver 17 of circuit 4. Gate driver 17 output is connected to gate G connection of transistor 20. Exit part of gate driver 17 is connected to supply Vcc, and control emitter E' to the mass of this supply.
Fig. 3 shows a block diagram of alternative circuit 3 for over-temperature protection and measuring transistor 20 silicon temperature.
Bistable 25 Cp input is connected to logic AND gate 9 output, referred to in Figure 2. Alternative circuit 3 is connected to device 1 referred to in Figure 1 at points 27, 28, G and 29.
Bistable 25 input D is connected to voltage supply Vcc. Bistable 25 reset R is connected to logic inverter 26 output whose input is connected to the control signal for turning on and off of transistor 20.
Bistable 25 output Q is connected to sample and hold sub circuit 21. Sub circuit 21 output is connected to analogue to digital conversion sub circuit 22 and to over- temperature protection sub circuit 23. Sub circuit 23 output gives information about over-temperature 19 and is connected to circuit 4 logic inverter 15 input referred to in Figure 2, at point 28. Sub circuit 22 output is connected to memory sub circuit 24 input. Sub circuit 24 output of connection 30 contains information about measured threshold voltages or transistor 20 silicon temperatures in real time.
The embodiment as presented here, serves only as the description of the invention. The invention is not limited to this embodiment only. Different modifications are, of course, possible together with different variations of the application of the invention. Furthermore, the description using a power insulated gate bipolar transistor 20 is presented here, but the invention can also be applied to power insulated gate unipolar transistors.
Applicability of the Invention
The invention can be applied in operational conditions for silicon over-temperature protection and for measuring transistor silicon temperature in real time. In this way higher converter reliability can be achieved. The possibility of measuring transistor silicon temperature in operational conditions in real time can be used for checking or determining conditions which are relevant for dimensioning of the converter. The device for silicon over-temperature protection and for measuring transistor silicon temperature in real time can be a part of the driver but it can also be made as an addition to already existent drivers.
All this enables the use of the transistor with less reserve as regards silicon limit temperature, better transistor utilization, smaller dimensions, smaller mass, lower price and higher reliability of the converter.
INDEX OF REFERENCE SIGNS
1 - device
2 - voltage sensing circuit
3 - over-temperature protection and silicon temperature measurement circuit 4 - power circuit
5 - comparator
6 - power source
7 - comparator
8 - power source
9 - logic AND gate
10 - comparator
11 - power source
12 - logic Nl gate
13 - bistable
14 - logic inverter
15 - logic inverter
16 - gate
17 - gate driver
18 - turn on/off control signal
19 - over-temperature
20 - transistor
21 - sample and hold sub circuit
22 - analogue/digital conversion sub circuit
23 - over-temperature protection sub circuit
24 - memory sub circuit
25 - bistable
26 - logic inverter
27 - point
28 - point
29 - point
30 - connection
31 - parasitic inductance
E - energy emitter
E' - control emitter
G - gate
C - collector
Cp - bistable input
D - bistable output
Vcc - voltage supply
R - bistable reset
Q - bistable output
Uge - power gate, emitter
Ue'e - power control emitter, emitter
Upr/nt - threshold voltage, lower temperature Upr/vt - threshold voltage, higher temperature Uge/nt -voltage gate emitter, lower temperature Uge/vt - voltage gate emitter, higher temperature
Claims
1. A procedure for measuring silicon temperature and over-temperature protection of power insulated gate bipolar transistors which is performed by measuring threshold voltage at turning on, which linearly decreases as the transistor silicon temperature increases, characterized in that the moment, at which the voltage between the gate and the control emitter corresponds to the threshold voltage, is determined by voltage detection between the control and power connections of the emitter.
2. The procedure according to claim 1, characterized in that the relation between transistor silicon temperature and threshold voltage at room temperature is determined for each transistor, and that for other temperatures linear temperature dependency of that voltage of approximately 9 mV/K is to be taken into account or that relation between transistor silicon temperature and threshold voltage is determined at two temperatures, and that from the two measured points the linear dependency between threshold voltage and silicon temperature for that transistor is to be defined.
3. The procedure according to claims 1 and 2, characterized in that for protection against interferences, a voltage detection between the control and power connections of the emitter at turning on is to be performed after current passes the gate through zero i.e. after the determined positive value of voltage between the gate and the transistor control emitter, or after some other condition which defines that the gate current is higher than zero.
4. The procedure according to claims 1 , 2 and 3, characterized in that if the voltage between the gate and the control emitter at turning on the transistor, at the moment of voltage detection between the control and power connections of the emitter is lower than the set level at which protection is actuated, then transistor silicon temperature is higher than allowed.
5. The procedure according to claim 4, characterized in that the information on the silicon temperature which is higher than allowed is to be forwarded to superior electronics and to transistor gate driver which then gives the order to turn off the transistor for the purpose of over-temperature protection.
6. The procedure according to claims 1 , 2 and 3, characterized in that at the moment at which the voltage between the control and power emitter connections is detected, the voltage between the gate and the control emitter shall be measured and recorded and converted into digital form and together with predetermined temperature dependency between threshold voltage and silicon temperature for that transistor, is to be recorded as the measured transistor silicon temperature and be sent to superior electronics.
7. The procedure according to claim 6, characterized in that the measured and recorded voltage between the gate and the control emitter shall be compared to the value which corresponds to the level of actuation of over-temperature protection before the conversion from analogue to digital form, and if that voltage is lower than the set level at which protection is actuated, the silicon temperature is higher than allowed, and this information is to be forwarded to superior electronics, as well as to the driver of the transistor which then gives the order to turn the transistor off for the purpose of over- temperature protection.
8. The procedure according to claims 1-7, characterized in that it can be applied to power insulated gate unipolar transistors.
9. A device for measuring silicon temperature and over-temperature protection of power insulated gate bipolar transistor, characterized in that it consists of:
- power transistor (20) with collector connections (C), gate (G), control emitter (Ε') and energy emitter (E),
- circuit (2) for voltage detection between the control (Ε') and energy (E) emitters of the transistor (20),
- circuit (3) for over-temperature protection and measuring silicon temperature, and - driver (4) for turning on and off of transistor (20).
10. The device according to claim 9, characterized in that a special energy emitter connection is to be made for the power transistor (20) with only one emitter connection so that a parasitic inductance (31) is achieved between the control and energy emitter connections at which, when turning on the transistor, voltage is detected at the moment at which current is conducted.
11. The device according to claim 9, characterized in that circuit (2) contains a comparator (5), power source (6) which determine the condition following which the comparator (7) can detect the voltage between the control and power connections of the emitter, at which the power source (8) determines the level of detection of that voltage so as to avoid interference influence, and comparator outputs (5) and (7) are connected to logic AND gate (9) whose output is connected to Nl gate (12) input from circuit (3).
12. The device according to claim 9, characterized in that circuit (3) contains a comparator (10) whose non-inverting input is connected to gate connection, power source (11), which determines the level of actuation of over-temperature protection, is connected to inverting output of the comparator (10), while the comparator (10) output is connected to Nl gate (12) input, whose output is connected to (Cp) input of bistable (13), while the bistable (13) input (D) is connected to voltage supply (Vcc), and reset (R) is connected to the logic inverter (14) output whose input is connected to the control signal for turning on and off, and that bistable (13) at output (Q) gives information on over-temperature.
13. The device according to claim 9, characterized in that circuit (4) contains a logic inverter (15) whose inputs are connected to bistable (13) output (Q), and its output is connected to logic AND gate (16) output whose other input is connected to the control signal for turning on and off the transistor, and logic AND gate (16) output is connected to the input of the exit part of the driver (17) connected to the voltage supply Vcc, whose output is connected to the connection of the gate (G) and the control emitter (Ε') of transistor (20).
14. The device according to claim 9, characterized in that alternative circuit (3) contains a bistable (25) on whose (Cp) input logic AND gate (9) output is connected, while input (D) of that bistable is connected to the voltage supply (Vcc), and reset (R) is connected to the logic inverter (26) output to whose inputs the control signal for turning on and off the transistor (20) is connected.
15. The device according to claims 9 and 14, characterized in that alternative circuit (3) contains a sample and hold sub circuit (21), at which sub circuit inputs bistable (25) output (Q) and gate (G) connection of transistor (20) are connected, while sub circuit (21) output is connected to analogue to digital conversion sub circuit (22) input and to the over-temperature protection sub circuit (23) input, whose output is connected to logic inverter (15) input through point (28) in circuit (4).
16. The device according to claim 15, characterized in that alternative circuit (3) contains a memory sub circuit (24) whose input is connected to the analogue to digital conversion sub circuit (22) output, while its output and connection (30) contains information on measured threshold voltages and transistor (20) silicon temperature in real time, respectively.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| HRP20110689AA HRP20110689B1 (en) | 2011-09-26 | 2011-09-26 | Device and method for measuring silicon temperature and overheating protection of insulated gate bipolar power transistors |
| HRP20110689A | 2011-09-26 |
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| Publication Number | Publication Date |
|---|---|
| WO2013045960A2 true WO2013045960A2 (en) | 2013-04-04 |
| WO2013045960A3 WO2013045960A3 (en) | 2014-01-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/HR2012/000020 WO2013045960A2 (en) | 2011-09-26 | 2012-09-24 | Procedure and device for measuring silicon temperature and over-temperature protection of a power insulated gate bipolar transistor |
Country Status (2)
| Country | Link |
|---|---|
| HR (1) | HRP20110689B1 (en) |
| WO (1) | WO2013045960A2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015044205A1 (en) * | 2013-09-24 | 2015-04-02 | Abb Technology Ag | Method and apparatus for determining an actual junction temperature of an igbt device |
| CN113884209A (en) * | 2021-09-09 | 2022-01-04 | 芯原微电子（成都）有限公司 | Low-power consumption over-temperature detection circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6060792A (en) | 1997-05-20 | 2000-05-09 | International Rectifier Corp. | Instantaneous junction temperature detection |
| US20090167414A1 (en) | 2007-12-26 | 2009-07-02 | Infineon Technologies Ag | Temperature detection for a semiconductor component |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6088208A (en) * | 1997-03-31 | 2000-07-11 | Matsushita Electronics Corporation | Electronic device, electronic switching apparatus including the same, and production method thereof |
| DE102006001874B4 (en) * | 2006-01-13 | 2012-05-24 | Infineon Technologies Ag | Method and device for current and temperature measurement in a power electronic circuit |
| JP2008130724A (en) * | 2006-11-20 | 2008-06-05 | Toyota Central R&D Labs Inc | Semiconductor device |
-
2011
- 2011-09-26 HR HRP20110689AA patent/HRP20110689B1/en active IP Right Grant
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6060792A (en) | 1997-05-20 | 2000-05-09 | International Rectifier Corp. | Instantaneous junction temperature detection |
| US20090167414A1 (en) | 2007-12-26 | 2009-07-02 | Infineon Technologies Ag | Temperature detection for a semiconductor component |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015044205A1 (en) * | 2013-09-24 | 2015-04-02 | Abb Technology Ag | Method and apparatus for determining an actual junction temperature of an igbt device |
| CN105556266A (en) * | 2013-09-24 | 2016-05-04 | Abb技术有限公司 | Method and apparatus for determining an actual junction temperature of an igbt device |
| US9683898B2 (en) | 2013-09-24 | 2017-06-20 | Abb Schweiz Ag | Method and apparatus for determining an actual junction temperature of an IGBT device |
| CN113884209A (en) * | 2021-09-09 | 2022-01-04 | 芯原微电子（成都）有限公司 | Low-power consumption over-temperature detection circuit |
| CN113884209B (en) * | 2021-09-09 | 2023-10-10 | 芯原微电子（成都）有限公司 | Low-power consumption over-temperature detection circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| HRP20110689A2 (en) | 2013-03-31 |
| WO2013045960A3 (en) | 2014-01-16 |
| HRP20110689B1 (en) | 2016-05-20 |
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