WO2013021464A1 - 窒化物半導体紫外線発光素子 - Google Patents
窒化物半導体紫外線発光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 31
- 238000005253 cladding Methods 0.000 claims abstract description 71
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 27
- 239000010980 sapphire Substances 0.000 claims abstract description 27
- 239000013078 crystal Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 181
- 238000009826 distribution Methods 0.000 description 43
- 238000005259 measurement Methods 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 16
- 230000007423 decrease Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Definitions
- the present invention relates to a nitride semiconductor light emitting device in which an n-type cladding layer, an active layer, and a p-type cladding layer of an AlGaN-based semiconductor layer are formed on the upper side of a sapphire (0001) substrate.
- the present invention relates to a nitride semiconductor ultraviolet light-emitting device.
- nitride semiconductor light emitting devices such as LEDs (light emitting diodes) and semiconductor lasers use a sapphire (0001) substrate as a substrate, on which a light emitting device structure comprising a plurality of nitride semiconductor layers is formed by epitaxial growth.
- the nitride semiconductor layer is represented by a general formula Al 1-xy Ga x In y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1).
- a sapphire (0001) substrate is a nitride semiconductor in which a (0001) plane is not inclined at all, that is, a slightly inclined substrate with a (0001) plane slightly inclined from an untilted substrate with an off angle of 0 degrees is epitaxially grown.
- a (0001) plane is not inclined at all, that is, a slightly inclined substrate with a (0001) plane slightly inclined from an untilted substrate with an off angle of 0 degrees is epitaxially grown.
- those having an off angle of about 0.05 ° to 0.5 ° are generally used (for example, Patent Document 1 and Patent Document 2 below) reference).
- the light-emitting element structure includes a single quantum well structure (SQW: Single-Quantum-Well) or a multiple quantum well structure (MQW) between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. ) Having a double heterostructure sandwiched between active layers made of nitride semiconductor layers.
- the active layer is an AlGaN-based semiconductor layer
- AlN molar fraction also referred to as AlN composition ratio
- the band gap energy can be obtained by the band gap energy (about 3.4 eV and about 6. eV). 2eV) can be adjusted within a range having a lower limit and an upper limit, respectively, and an ultraviolet light emitting element having an emission wavelength of about 200 nm to about 365 nm can be obtained.
- the above-described slightly inclined substrate becomes a step-shaped substrate having a step S between the terrace surface T having the (0001) plane inclined and the terrace surface T.
- the width W decreases as the off-angle ⁇ increases.
- the off angle ⁇ is defined as an angle formed by a line connecting the upper end or the lower end of the step S and the terrace surface T.
- the RMS (root mean square) value of the irregularities on the surface of a nitride semiconductor layer formed on a general sapphire (0001) substrate having an off angle of about 0.05 ° to 0.5 ° is usually 0.4 nm or less. However, when the off-angle increases beyond 0.5 °, the RMS value may increase beyond 0.4 nm.
- the film thickness of the quantum well layer constituting the active layer is usually 5 nm or less, if the off-angle is excessively increased, the fluctuation given to the film thickness of the quantum well layer increases, and the light emission performance of the light emitting device is affected. Is concerned.
- the nitride semiconductor layer grown on the substrate surface also has a step shape following the properties of the substrate surface. Since it is easy to move to the side terrace surface, segregation of Ga occurs in the composition of the growing nitride semiconductor layer, and in an AlGaN-based semiconductor, an AlGaN region with a high AlN mole fraction and a low AlN mole fraction along the stepped portion. An AlGaN region is formed. As a result, when the off-angle increases, the wavelength distribution of light emission from the active layer widens, and the peak of the light emission wavelength may be separated.
- nitride semiconductor light emitting devices using a sapphire (0001) substrate those with an off-angle of about 0.05 ° to 0.5 ° are generally used.
- This is suitable for a light-emitting element having an emission wavelength longer than about 365 nm in the case of a GaN or InGaN-based semiconductor (see, for example, Patent Document 1 and Patent Document 2).
- the present invention has been made in view of the above-mentioned problems, and its purpose is to improve the crystal quality of an AlGaN-based semiconductor layer formed on a sapphire (0001) substrate by optimizing the off-angle, and to perform nitriding
- the object is to improve the light emission output of the semiconductor light emitting device.
- the full width at half maximum (FWHM) of the twist distribution evaluated by the X-ray rocking curve (XRC) method of the AlGaN layer formed on the sapphire (0001) substrate is shown.
- XRC X-ray rocking curve
- the present invention has been made based on the above-mentioned new knowledge, and includes a sapphire (0001) substrate, an underlying structure portion including an AlN layer formed on the (0001) surface of the substrate, and the underlying structure portion.
- a light-emitting element structure including an n-type cladding layer of an n-type AlGaN-based semiconductor layer, an active layer having an AlGaN-based semiconductor layer, and a p-type cladding layer of a p-type AlGaN-based semiconductor layer formed on the crystal surface of
- the (0001) plane of the substrate is inclined at an off angle of 0.6 ° to 3.0 °, and the AlN mole fraction of the n-type cladding layer is 50% or more.
- a nitride semiconductor ultraviolet light emitting device is provided.
- the off-angle range that is generally used conventionally is 0.6.
- the probability that the FWHM of the twist distribution indicating the crystallinity of the n-type AlGaN layer above the AlN layer of the underlying structure portion will be significantly lower than the predetermined value is greatly improved, and light emission is performed at a high yield.
- the output can be improved.
- the off angle is more preferably 1.0 ° or more and 2.5 ° or less.
- the nitride semiconductor ultraviolet light-emitting device having the above characteristics preferably has a peak emission wavelength of 300 nm or less.
- the sapphire (0001) substrate having an off angle in the range of 0.6 ° or more and 3.0 ° or less has a (0001) plane in a step shape. Therefore, in the AlGaN semiconductor layer formed thereon, Ga Segregation occurs and the emission wavelength distribution spreads. As described later, the spread of the emission wavelength distribution tends to increase as the emission wavelength becomes longer.
- the peak emission wavelength is 300 nm or less, the spread of the emission wavelength distribution (full width at half maximum) is 1 ° off angle. In this case, it is suppressed to about 20 nm or less, and the peak of the emission wavelength is not separated.
- the film thickness of the AlN layer formed on the substrate of the base structure portion is 2.2 ⁇ m or more and 6.6 ⁇ m or less.
- the thickness of the AlN layer in the underlying structure portion is larger, the crystallinity of the n-type AlGaN layer formed thereon tends to be further improved.
- the thickness is too large, There is a tendency that cracks are likely to occur.
- FIG. 6 is a characteristic diagram showing emission wavelength characteristics of Examples 2 and 3 and Comparative Example 2. 6 is a list showing FWHM of twist distribution, light emission output at forward current of 100 mA, and FWHM of light emission wavelength distribution of n-type cladding layers of Examples 1 to 3 and Comparative Examples 1 to 3.
- Embodiments of a nitride semiconductor ultraviolet light emitting device (hereinafter simply referred to as “light emitting device”) according to the present invention will be described with reference to the drawings.
- the main contents are emphasized and the contents of the invention are schematically shown. Therefore, the dimensional ratio of each part is not necessarily the same as the actual element. It is not.
- the light emitting element is a light emitting diode.
- the light-emitting element 1 of the present embodiment uses a substrate in which an AlN layer 3 and an AlGaN layer 4 are grown on a sapphire (0001) substrate 2 as a template 5 (corresponding to a base structure portion).
- a template 5 corresponding to a base structure portion.
- the light emitting element structure portion 11 from the n-type cladding layer 6 to the p-type contact layer 10 is formed in the first region R1 on the n-type cladding layer 6.
- a Ni / Au p-electrode 12 is formed on the surface of the p-type contact layer 10 and a part of the surface of the second region R2 other than the first region R1 of the n-type cladding layer 6, for example, Ti / Al.
- An n electrode 13 of / Ti / Au is formed.
- the AlN layer 3 is a crystal grown at a temperature of about 1150 to 1300 ° C.
- a slightly inclined substrate in which the (0001) plane of the substrate is inclined at an off angle of 0.6 ° to 3.0 ° is used as the sapphire (0001) substrate 2.
- the off angle of the slightly inclined substrate is more preferably 1.0 ° or more and 2.5 ° or less.
- the off-angle inclination direction may be either the m-axis direction, the a-axis direction, or an intermediate direction thereof.
- the active layer 7 has, for example, a single-layer quantum well structure including an n-type AlGaN barrier layer 7a having a thickness of 10 nm and an AlGaN well layer 7b having a thickness of 3.5 nm.
- the active layer 7 may be a double heterojunction structure sandwiched between n-type and p-type AlGaN layers having a large Al mole fraction between the lower layer and the upper layer, and the single quantum well structure is multilayered.
- a multiple quantum well structure may be used.
- Each AlGaN layer is formed by a well-known epitaxial growth method such as a metal organic compound vapor phase growth (MOVPE) method or a molecular beam epitaxy (MBE) method.
- MOVPE metal organic compound vapor phase growth
- MBE molecular beam epitaxy
- Si or p-type is used as a donor impurity of an n-type layer.
- Mg is used as the acceptor impurity of the layer.
- the AlN layer and the AlGaN layer whose conductivity type is not specified are undoped layers into which impurities are not implanted.
- the AlN mole fraction of the n-type AlGaN layer and the active layer is, for example, 50% to 100% (more preferably 55% to 90%) for the AlGaN layer 4, the n-type cladding layer 6 and the barrier layer 7a. ), And the well layer 7b is 30% or more and 80% or less (more preferably, 35% or more and 70% or less).
- the peak emission wavelength of the light emitting element 1 is 223 nm or more and 300 nm or less.
- the AlN molar fraction of the AlGaN layer 4 needs to be set larger than that of the well layer 7b.
- the AlN mole fraction of the AlGaN layer 4 and the n-type cladding layer 6 is set to be the same. Note that the AlN mole fraction of the AlGaN layer 4 may be larger than that of the n-type cladding layer 6.
- each AlGaN layer of the light emitting element structure other than the active layer 7 is, for example, 2000 nm for the n-type cladding layer 6, 2 nm for the electron blocking layer 8, 540 nm for the p-type cladding layer 9, and 200 nm for the p-type contact layer 10 It is.
- the thickness of the AlN layer 3 is preferably set to 2200 nm to 6600 nm, more preferably 3000 nm to 6000 nm.
- the thickness of the AlGaN layer 4 is, for example, 200 nm to 300 nm. Set to range.
- the conductivity type of the AlGaN layer 4 may be an n-type layer instead of an undoped layer. May be integrated with the n-type clad layer 6, and the template 5 may be composed of only the AlN layer 3.
- FIG. 3 shows an example of a plan view pattern of the light emitting element 1.
- FIG. 3 shows the first region R1 and the second region R2 before the p-electrode 12 and the n-electrode 13 are formed.
- the p electrode 12 is formed on almost the entire surface of the first region R1
- the n electrode 13 is formed on almost the entire surface of the second region R2.
- the chip size of the light-emitting element 1 used in Examples described later is 800 ⁇ m in both vertical and horizontal directions
- the area of the first region R1 is about 168000 ⁇ m 2 .
- the first region R1 shown in FIG. 2 is a part of the first region R1 shown in FIG.
- the template 5 of the light emitting element 1 and each layer of the light emitting element portion 11 are formed by a well-known growth method as described above, and the p electrode 12 and the n electrode 13 are each formed with a photoresist serving as an inverted pattern of each electrode. Later, a multilayer metal film of each electrode is deposited by an electron beam deposition method, the photoresist is removed by lift-off, the multilayer metal film on the photoresist is peeled off, and is required by RTA (instantaneous thermal annealing) or the like. Accordingly, it is formed by heat treatment.
- RTA instantaneous thermal annealing
- FIG. 4 shows the first measurement data that is the basis of the present invention.
- the n-type cladding layer 6 of the light emitting device 1 having the structure exemplified in FIGS. 2 and 3 has a peak emission wavelength in the range of 255 nm to 300 nm.
- the twist distribution FWHM and the light emission output measured by the XRC method for evaluating the crystallinity of the n-type AlGaN layer are plotted with the FWHM (unit: arcsec) on the horizontal axis and the light emission output (unit: mW) in the vertical direction. This is a graph plotted on the axis.
- the sample sapphire (0001) substrate used had an off angle in the range of 0.15 ° to 2.0 °.
- FIG. 5 shows the second measurement data that forms the basis of the present invention.
- the n-type cladding layer 6 has an AlN molar fraction of 50% or more and off-angles of 0.3 °, 0.6 °, and 1.0 °. , 1.5 °, 2.0 °, and 3.0 ° are plotted for the minimum value and median value of the measured FWHM values of the twist distribution at each off angle. However, only the minimum value is displayed for the off angle of 3.0 °.
- the structure of the measurement data sample shown in FIG. 5 is the same as that of the measurement data sample shown in FIG. 4 except that the semiconductor layer above the n-type cladding layer 6 and each electrode are not formed.
- FIG. 6 shows third measurement data that forms the basis of the present invention.
- the n-type cladding layer 6 has an AlN molar fraction of 50% or more and off-angles of 0.15 °, 0.3 °, and 1.0 °.
- the FWHM of the layer 6 is plotted on the vertical axis and the FWHM of the AlN layer 3 is plotted on the horizontal axis, and the measured values of each FWHM are plotted.
- the n-type cladding layer 6 is a line in which the FWHMs of the AlN layer 3 and the n-type cladding layer 6 connect the same value points, and in the sample below the solid line, the upper layer is higher than the AlN layer 3.
- the crystallinity of the n-type cladding layer 6 is improved, and conversely, in the sample above the solid line, the crystallinity is lowered in the n-type cladding layer 6 above the AlN layer 3. Show.
- the FWHM of the AlN layer 3 was distributed from 410 to 683 arcsec, but the FWHM of the n-type cladding layer 6 was changed from 394 to 568 arcsec. It can be seen that the crystallinity is improved in the sample, and the FWHM is almost 550 arcsec or less in almost all the samples.
- FIG. 7 shows fourth measurement data that forms the basis of the present invention.
- Three types of samples with off-angles of 0.15 °, 0.3 °, and 1.0 ° sample structures are shown in FIGS. 5 and 6.
- the twist distribution of the n-type cladding layer 6 is The FWHM is measured, the FWHM of the n-type cladding layer 6 is plotted on the vertical axis, the AlN mole fraction of the n-type cladding layer 6 is plotted on the horizontal axis, and the measured values of FWHM are plotted.
- the FWHM of the twist distribution increases with the increase of the AlN mole fraction in the range where the AlN mole fraction of the n-type cladding layer 6 is about 40% or less.
- the crystallinity of the n-type cladding layer 6 increases and the crystallinity of the n-type cladding layer 6 decreases.
- the FWHM of the twist distribution decreases with the increase of the AlN molar fraction. Further, it can be seen that in order to realize FWHM of about 550 arcsec or less, it is necessary to limit the AlN molar fraction to about 28% or less.
- the FWHM of the twist distribution slightly increases with the increase of the AlN mole fraction, and the n-type cladding
- the crystallinity of the layer 6 decreases, and conversely, in the range of about 35% or more, as the AlN molar fraction increases, the FWHM of the twist distribution decreases and the crystallinity of the n-type cladding layer 6 tends to improve. .
- the FWHM of the twist distribution decreases as the AlN mole fraction increases in the range where the AlN mole fraction of the n-type cladding layer 6 is about 30% or more.
- the crystallinity of the n-type cladding layer 6 tends to be improved, and that the FWHM of about 550 arcsec or less can be realized with high yield when the AlN molar fraction of the n-type cladding layer 6 is about 50% or more. .
- the light-emitting element 1 of the present embodiment has an AlN molar fraction of the n-type cladding layer 6 of 50% or more and an off-angle of the sapphire (0001) substrate of 0.6 ° or more. Since it is set within the range of 3.0 ° or less, the n-type cladding layer 6 having a good crystallinity with a FWHM of twist distribution of about 550 arcsec or less can be realized with a high yield, and as a result, a stable high light emission output It can be seen that
- the FWHM of the twist distribution is further reduced from about 550 arcsec by setting the off-angle of the sapphire (0001) substrate within the range of 1.0 ° to 2.5 °. It can be seen that a high light output can be obtained more stably.
- the AlN molar fraction of the n-type cladding layer 6 is 28% or less, that is, when the emission wavelength from the active layer 7 is long, sapphire
- the off-angle of the (0001) substrate should be kept to a small value of about 0.15 °.
- the AlN mole fraction of the n-type cladding layer 6 is 50% or more, that is, light emission from the active layer 7.
- the off angle is preferably 0.6 ° or more and 3.0 ° or less, significantly exceeding the range conventionally used.
- FIG. 8 shows a sample having an AlN molar fraction of the n-type cladding layer 6 of 50% or more and an off angle of 1.0 ° (the sample structure is the same as the measurement data sample shown in FIGS. 5 to 7).
- the measurement result of the film thickness dependence of the AlN layer is shown, and it is understood that the FWHM of the twist distribution of the n-type cladding layer 6 can be about 550 arcsec or less when the film thickness is in the range of 2200 nm to 6600 nm.
- Example 3 the light emission output and the wavelength distribution of the two comparative examples 1 and 2 with an off angle of 0.3 ° of the sapphire (0001) substrate 2 and the comparative example 3 with an off angle of 0.15 ° were measured. It shows in FIG. 9 thru
- the AlN mole fractions of the n-type cladding layer 6 and the well layer 7b are 60% and 35%, respectively.
- the wavelengths are close to each other (first emission wavelength group).
- the other element structures are the same except that the off-angle is different.
- the AlN mole fractions of the n-type cladding layer 6 and the well layer 7b are 70% and 55%, respectively, and the light emission.
- the wavelengths are close to each other (second emission wavelength group).
- FIG. 9 shows the light emission output characteristics indicating the relationship between the light emission output of Example 1 and Comparative Examples 1 and 3 and the forward current
- FIG. 10 shows the light emission wavelength characteristics of Example 1 and Comparative Examples 1 and 3.
- FIG. 11 shows the light emission output characteristics indicating the relationship between the light emission outputs of Examples 2 and 3 and Comparative Example 2 and the forward current
- FIG. 12 shows the light emission wavelength characteristics of Examples 2 and 3 and Comparative Example 2. 10 and 12, the vertical axis of the emission wavelength characteristic indicates the emission intensity normalized with the peak output as 1.
- the emission wavelength distribution spreads when the off-angle exceeds 0.3 ° in each emission wavelength group. It can be seen that, in the two emission wavelength groups, the spread of the emission wavelength distribution is suppressed in the second emission wavelength group having a shorter emission wavelength. In each emission wavelength group, the peak emission wavelength tends to increase as the off-angle increases, but it can be seen that the shorter emission wavelength suppresses changes in the peak emission wavelength. Specifically, from FIG. 10, in Example 1 with an off angle of 1.0 °, the peak emission wavelength is about 15 nm longer and about 300 nm than in Comparative Example 3 with an off angle of 0.15 °.
- the FWHM of the wavelength distribution extends to about 18 nm, which is about 1.5 times, but no separation of the emission wavelength peak is observed. From FIG. 12, in Example 2 with an off angle of 1.0 °, the peak emission wavelength is slightly longer by about 2 nm and about 260 nm than in Comparative Example 2 with an off angle of 0.3 °. The FWHM of the FWHM extends to about 12 nm, which is about 1.2 times, but is suppressed to about 1.2 times the enlargement.
- the spread of the emission wavelength distribution observed in FIG. 10 and FIG. 12 increases the step-like step of the sapphire (0001) substrate 2 as the off-angle increases, and the light-emitting element formed in the upper layer thereof.
- Ga segregation occurs in the composition of the AlGaN layer in the active layer 7 of the structure 11, and an AlGaN region having a high AlN molar fraction and an AlGaN region having a low AlN molar fraction are formed along the stepped portion.
- the off angle of the sapphire (0001) substrate is It is clear that the light emission output can be increased by setting the light emission wavelength distribution to FWHM slightly by setting it to 0.6 ° or more and 3.0 ° or less, far exceeding the range used in the past. It was.
- the embodiment of the light emitting element 1 has been described in detail above.
- the light emitting element structure 11 shown in FIG. 2 is described as an example of the light emitting element structure constituting the light emitting element 1, but the stacked structure, electrode structure, film thickness, and AlGaN exemplified in the above description are used.
- the AlN mole fraction of the layer is an example, and the light emitting element structure portion 11 is not limited to the specific example.
- the planar view shape of the light emitting element 1 is not limited to the shape illustrated in FIG.
- the measurement data shown in FIGS. 5 to 8 are measurement data for a sample in which the element structure above the n-type cladding layer 6 is not formed, and the n-type cladding layer is independent of the element structure of the light emitting element structure portion 11.
- 6 indicates that the relationship between the off-angle and the crystallinity of the n-type cladding layer 6 (FWHM of twist distribution) is established, and the crystal of the n-type cladding layer 6
- the improvement of the light emission characteristic accompanying the improvement of the property is also expected in other light emitting element structures.
- the nitride semiconductor ultraviolet light-emitting device according to the present invention can be used for a light-emitting diode or the like having an AlN molar fraction of the n-type cladding layer of 50% or more, and is effective in improving the light emission output.
- Nitride semiconductor ultraviolet light emitting element 2 Sapphire (0001) substrate 3: AlN layer 4: AlGaN layer 5: Template (underlying structure) 6: n-type cladding layer (n-type AlGaN) 7: Active layer 7a: Barrier layer 7b: Well layer 8: Electron block layer (p-type AlGaN) 9: p-type cladding layer (p-type AlGaN) 10: p contact layer (p-type GaN) 11: Light-emitting element structure 12: p-electrode 13: n-electrode R1: first region R2: second region S: step T: terrace surface
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Abstract
Description
2: サファイア(0001)基板
3: AlN層
4: AlGaN層
5: テンプレート(下地構造部)
6: n型クラッド層(n型AlGaN)
7: 活性層
7a: バリア層
7b: 井戸層
8: 電子ブロック層(p型AlGaN)
9: p型クラッド層(p型AlGaN)
10: pコンタクト層(p型GaN)
11: 発光素子構造部
12: p電極
13: n電極
R1: 第1領域
R2: 第2領域
S: 段差
T: テラス面
Claims (4)
- サファイア(0001)基板と、前記基板の(0001)面上に形成されたAlN層を含む下地構造部、及び、
前記下地構造部の結晶表面上に形成された、n型AlGaN系半導体層のn型クラッド層と、AlGaN系半導体層を有する活性層と、p型AlGaN系半導体層のp型クラッド層を含む発光素子構造部を備えてなり、
前記基板の(0001)面が0.6°以上3.0°以下のオフ角で傾斜し、
前記n型クラッド層のAlNモル分率が50%以上であることを特徴とする窒化物半導体紫外線発光素子。 - 前記オフ角が1.0°以上2.5°以下であることを特徴とする請求項1に記載の窒化物半導体紫外線発光素子。
- ピーク発光波長が300nm以下であることを特徴とする請求項1または2に記載の窒化物半導体紫外線発光素子。
- 前記下地構造部の前記基板上に形成される前記AlN層の膜厚が、2.2μm以上6.6μm以下であることを特徴とする請求項1~3の何れか1項に記載の窒化物半導体紫外線発光素子。
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RU2561761C1 (ru) | 2015-09-10 |
KR20140043161A (ko) | 2014-04-08 |
TWI529961B (zh) | 2016-04-11 |
CN103733449A (zh) | 2014-04-16 |
KR101855053B1 (ko) | 2018-05-04 |
EP2747220B1 (en) | 2016-11-30 |
US9502606B2 (en) | 2016-11-22 |
KR20170021893A (ko) | 2017-02-28 |
US20140158983A1 (en) | 2014-06-12 |
TW201308656A (zh) | 2013-02-16 |
JPWO2013021464A1 (ja) | 2015-03-05 |
KR101859355B1 (ko) | 2018-05-18 |
US9356192B2 (en) | 2016-05-31 |
JP5881222B2 (ja) | 2016-03-09 |
CN103733449B (zh) | 2016-05-11 |
US20160240727A1 (en) | 2016-08-18 |
KR20180031822A (ko) | 2018-03-28 |
EP2747220A1 (en) | 2014-06-25 |
EP2747220A4 (en) | 2015-07-08 |
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