WO2012067409A3 - Thin film transistor substrate having hybrid cmos structure and optical sensor array using the substrate - Google Patents

Thin film transistor substrate having hybrid cmos structure and optical sensor array using the substrate Download PDF

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Publication number
WO2012067409A3
WO2012067409A3 PCT/KR2011/008721 KR2011008721W WO2012067409A3 WO 2012067409 A3 WO2012067409 A3 WO 2012067409A3 KR 2011008721 W KR2011008721 W KR 2011008721W WO 2012067409 A3 WO2012067409 A3 WO 2012067409A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
substrate
optical sensor
cmos structure
Prior art date
Application number
PCT/KR2011/008721
Other languages
French (fr)
Other versions
WO2012067409A2 (en
Inventor
Moon Hyo Kang
Ji Ho Hur
Original Assignee
Silicon Display Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Display Co., Ltd. filed Critical Silicon Display Co., Ltd.
Publication of WO2012067409A2 publication Critical patent/WO2012067409A2/en
Publication of WO2012067409A3 publication Critical patent/WO2012067409A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

The present invention relates to a thin film transistor substrate in which a polycrystalline silicon thin film transistor having a coplanar structure with an insulating interlayer and an amorphous silicon thin film transistor having an inverted staggered structure with a gate insulating layer are formed on one substrate and the insulating interlayer and the gate insulating layer are formed as the same layer. When a hybrid CMOS structure is used, the manufacturing process is simplified and a characteristic of the amorphous silicon thin film transistor and the characteristic of the polycrystalline silicon thin film transistor can be simultaneously obtained with one substrate, and, as a result, the applicability of the thin film transistor is increased.
PCT/KR2011/008721 2010-11-15 2011-11-15 Thin film transistor substrate having hybrid cmos structure and optical sensor array using the substrate WO2012067409A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100113380A KR20120051979A (en) 2010-11-15 2010-11-15 Thin film transistor substrate having hybrid cmos structure and optical sensor array using the substrate
KR10-2010-0113380 2010-11-15

Publications (2)

Publication Number Publication Date
WO2012067409A2 WO2012067409A2 (en) 2012-05-24
WO2012067409A3 true WO2012067409A3 (en) 2012-08-09

Family

ID=46084505

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/008721 WO2012067409A2 (en) 2010-11-15 2011-11-15 Thin film transistor substrate having hybrid cmos structure and optical sensor array using the substrate

Country Status (2)

Country Link
KR (1) KR20120051979A (en)
WO (1) WO2012067409A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102134142B1 (en) * 2013-12-20 2020-07-16 엘지디스플레이 주식회사 Coplanar thin film transistor, gate driver having the same and fabricating method thereof
DE102015116026A1 (en) 2015-09-22 2017-03-23 JENETRIC GmbH Device and method for direct optical image acquisition of documents and / or living skin areas without imaging optical elements

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05232506A (en) * 1992-02-20 1993-09-10 Seiko Epson Corp Liquid crystal display device
JPH05299653A (en) * 1991-04-05 1993-11-12 Fuji Xerox Co Ltd Semiconductor device and manufacture thereof
KR950033613A (en) * 1994-05-10 1995-12-26 이헌조 TFT-LCD and its manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299653A (en) * 1991-04-05 1993-11-12 Fuji Xerox Co Ltd Semiconductor device and manufacture thereof
JPH05232506A (en) * 1992-02-20 1993-09-10 Seiko Epson Corp Liquid crystal display device
KR950033613A (en) * 1994-05-10 1995-12-26 이헌조 TFT-LCD and its manufacturing method

Also Published As

Publication number Publication date
KR20120051979A (en) 2012-05-23
WO2012067409A2 (en) 2012-05-24

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