WO2012067409A3 - Thin film transistor substrate having hybrid cmos structure and optical sensor array using the substrate - Google Patents
Thin film transistor substrate having hybrid cmos structure and optical sensor array using the substrate Download PDFInfo
- Publication number
- WO2012067409A3 WO2012067409A3 PCT/KR2011/008721 KR2011008721W WO2012067409A3 WO 2012067409 A3 WO2012067409 A3 WO 2012067409A3 KR 2011008721 W KR2011008721 W KR 2011008721W WO 2012067409 A3 WO2012067409 A3 WO 2012067409A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin film
- film transistor
- substrate
- optical sensor
- cmos structure
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 title abstract 5
- 230000003287 optical effect Effects 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 239000011229 interlayer Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The present invention relates to a thin film transistor substrate in which a polycrystalline silicon thin film transistor having a coplanar structure with an insulating interlayer and an amorphous silicon thin film transistor having an inverted staggered structure with a gate insulating layer are formed on one substrate and the insulating interlayer and the gate insulating layer are formed as the same layer. When a hybrid CMOS structure is used, the manufacturing process is simplified and a characteristic of the amorphous silicon thin film transistor and the characteristic of the polycrystalline silicon thin film transistor can be simultaneously obtained with one substrate, and, as a result, the applicability of the thin film transistor is increased.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100113380A KR20120051979A (en) | 2010-11-15 | 2010-11-15 | Thin film transistor substrate having hybrid cmos structure and optical sensor array using the substrate |
KR10-2010-0113380 | 2010-11-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012067409A2 WO2012067409A2 (en) | 2012-05-24 |
WO2012067409A3 true WO2012067409A3 (en) | 2012-08-09 |
Family
ID=46084505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/008721 WO2012067409A2 (en) | 2010-11-15 | 2011-11-15 | Thin film transistor substrate having hybrid cmos structure and optical sensor array using the substrate |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR20120051979A (en) |
WO (1) | WO2012067409A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102134142B1 (en) * | 2013-12-20 | 2020-07-16 | 엘지디스플레이 주식회사 | Coplanar thin film transistor, gate driver having the same and fabricating method thereof |
DE102015116026A1 (en) | 2015-09-22 | 2017-03-23 | JENETRIC GmbH | Device and method for direct optical image acquisition of documents and / or living skin areas without imaging optical elements |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05232506A (en) * | 1992-02-20 | 1993-09-10 | Seiko Epson Corp | Liquid crystal display device |
JPH05299653A (en) * | 1991-04-05 | 1993-11-12 | Fuji Xerox Co Ltd | Semiconductor device and manufacture thereof |
KR950033613A (en) * | 1994-05-10 | 1995-12-26 | 이헌조 | TFT-LCD and its manufacturing method |
-
2010
- 2010-11-15 KR KR1020100113380A patent/KR20120051979A/en not_active Application Discontinuation
-
2011
- 2011-11-15 WO PCT/KR2011/008721 patent/WO2012067409A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05299653A (en) * | 1991-04-05 | 1993-11-12 | Fuji Xerox Co Ltd | Semiconductor device and manufacture thereof |
JPH05232506A (en) * | 1992-02-20 | 1993-09-10 | Seiko Epson Corp | Liquid crystal display device |
KR950033613A (en) * | 1994-05-10 | 1995-12-26 | 이헌조 | TFT-LCD and its manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
KR20120051979A (en) | 2012-05-23 |
WO2012067409A2 (en) | 2012-05-24 |
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