WO2011155764A3 - 3차원 구조의 이미지센서의 제조방법 - Google Patents
3차원 구조의 이미지센서의 제조방법 Download PDFInfo
- Publication number
- WO2011155764A3 WO2011155764A3 PCT/KR2011/004183 KR2011004183W WO2011155764A3 WO 2011155764 A3 WO2011155764 A3 WO 2011155764A3 KR 2011004183 W KR2011004183 W KR 2011004183W WO 2011155764 A3 WO2011155764 A3 WO 2011155764A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- manufacturing
- image sensor
- dimensional structure
- bonding
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 4
- 235000012431 wafers Nutrition 0.000 abstract 9
- 238000005530 etching Methods 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
본 발명은 3차원 구조의 이미지센서의 제조방법에 관한 것으로, 보다 상세하게는, 제1 웨이퍼의 본딩 패드와 제2 웨이퍼의 본딩 패드를 돌출시켜 제1 웨이퍼와 제2 웨이퍼의 본딩 시 본딩 패드의 결합을 용이하게 할 수 있는 3차원 구조의 이미지센서의 제조방법에 관한 것이다. 본 발명에 따른 3차원 구조의 이미지센서의 제조방법은 제1 웨이퍼 형성단계, 제2 웨이퍼 형성단계, 웨이퍼 식각단계 및 웨이퍼 본딩단계를 구비하며, 웨이퍼 식각단계에서 제1 본딩패드 및 제2 본딩패드가 웨이퍼 표면으로부터 돌출되도록 패시베이션층을 식각하는 것을 특징으로 한다.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100053959A KR20110134139A (ko) | 2010-06-08 | 2010-06-08 | 3차원 구조의 이미지센서의 제조방법 |
KR10-2010-0053959 | 2010-06-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011155764A2 WO2011155764A2 (ko) | 2011-12-15 |
WO2011155764A3 true WO2011155764A3 (ko) | 2012-04-19 |
Family
ID=45098527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/004183 WO2011155764A2 (ko) | 2010-06-08 | 2011-06-08 | 3차원 구조의 이미지센서의 제조방법 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR20110134139A (ko) |
WO (1) | WO2011155764A2 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101399338B1 (ko) | 2011-08-08 | 2014-05-30 | (주)실리콘화일 | 이중 감지 기능을 가지는 기판 적층형 이미지 센서 |
US9048283B2 (en) * | 2012-06-05 | 2015-06-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid bonding systems and methods for semiconductor wafers |
KR102549621B1 (ko) * | 2016-09-02 | 2023-06-28 | 삼성전자주식회사 | 반도체 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060048661A (ko) * | 2004-06-30 | 2006-05-18 | 소니 가부시끼 가이샤 | 고체 촬상 장치, 카메라 및 고체 촬상 장치의 제조 방법 |
KR20070000578A (ko) * | 2005-06-28 | 2007-01-03 | (주)실리콘화일 | 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법 |
KR20070120255A (ko) * | 2006-06-19 | 2007-12-24 | (주)실리콘화일 | 배면 광 포토다이오드를 이용한 이미지센서 및 그 제조방법 |
KR20080067048A (ko) * | 2007-01-15 | 2008-07-18 | 엘지이노텍 주식회사 | 반도체 패키지 |
-
2010
- 2010-06-08 KR KR1020100053959A patent/KR20110134139A/ko not_active Application Discontinuation
-
2011
- 2011-06-08 WO PCT/KR2011/004183 patent/WO2011155764A2/ko active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060048661A (ko) * | 2004-06-30 | 2006-05-18 | 소니 가부시끼 가이샤 | 고체 촬상 장치, 카메라 및 고체 촬상 장치의 제조 방법 |
KR20070000578A (ko) * | 2005-06-28 | 2007-01-03 | (주)실리콘화일 | 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법 |
KR20070120255A (ko) * | 2006-06-19 | 2007-12-24 | (주)실리콘화일 | 배면 광 포토다이오드를 이용한 이미지센서 및 그 제조방법 |
KR20080067048A (ko) * | 2007-01-15 | 2008-07-18 | 엘지이노텍 주식회사 | 반도체 패키지 |
Also Published As
Publication number | Publication date |
---|---|
WO2011155764A2 (ko) | 2011-12-15 |
KR20110134139A (ko) | 2011-12-14 |
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