WO2011155764A3 - 3차원 구조의 이미지센서의 제조방법 - Google Patents

3차원 구조의 이미지센서의 제조방법 Download PDF

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Publication number
WO2011155764A3
WO2011155764A3 PCT/KR2011/004183 KR2011004183W WO2011155764A3 WO 2011155764 A3 WO2011155764 A3 WO 2011155764A3 KR 2011004183 W KR2011004183 W KR 2011004183W WO 2011155764 A3 WO2011155764 A3 WO 2011155764A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
manufacturing
image sensor
dimensional structure
bonding
Prior art date
Application number
PCT/KR2011/004183
Other languages
English (en)
French (fr)
Other versions
WO2011155764A2 (ko
Inventor
전인균
안희균
원준호
오세중
Original Assignee
(주)실리콘화일
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)실리콘화일 filed Critical (주)실리콘화일
Publication of WO2011155764A2 publication Critical patent/WO2011155764A2/ko
Publication of WO2011155764A3 publication Critical patent/WO2011155764A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

본 발명은 3차원 구조의 이미지센서의 제조방법에 관한 것으로, 보다 상세하게는, 제1 웨이퍼의 본딩 패드와 제2 웨이퍼의 본딩 패드를 돌출시켜 제1 웨이퍼와 제2 웨이퍼의 본딩 시 본딩 패드의 결합을 용이하게 할 수 있는 3차원 구조의 이미지센서의 제조방법에 관한 것이다. 본 발명에 따른 3차원 구조의 이미지센서의 제조방법은 제1 웨이퍼 형성단계, 제2 웨이퍼 형성단계, 웨이퍼 식각단계 및 웨이퍼 본딩단계를 구비하며, 웨이퍼 식각단계에서 제1 본딩패드 및 제2 본딩패드가 웨이퍼 표면으로부터 돌출되도록 패시베이션층을 식각하는 것을 특징으로 한다.
PCT/KR2011/004183 2010-06-08 2011-06-08 3차원 구조의 이미지센서의 제조방법 WO2011155764A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100053959A KR20110134139A (ko) 2010-06-08 2010-06-08 3차원 구조의 이미지센서의 제조방법
KR10-2010-0053959 2010-06-08

Publications (2)

Publication Number Publication Date
WO2011155764A2 WO2011155764A2 (ko) 2011-12-15
WO2011155764A3 true WO2011155764A3 (ko) 2012-04-19

Family

ID=45098527

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/004183 WO2011155764A2 (ko) 2010-06-08 2011-06-08 3차원 구조의 이미지센서의 제조방법

Country Status (2)

Country Link
KR (1) KR20110134139A (ko)
WO (1) WO2011155764A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101399338B1 (ko) 2011-08-08 2014-05-30 (주)실리콘화일 이중 감지 기능을 가지는 기판 적층형 이미지 센서
US9048283B2 (en) * 2012-06-05 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid bonding systems and methods for semiconductor wafers
KR102549621B1 (ko) * 2016-09-02 2023-06-28 삼성전자주식회사 반도체 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060048661A (ko) * 2004-06-30 2006-05-18 소니 가부시끼 가이샤 고체 촬상 장치, 카메라 및 고체 촬상 장치의 제조 방법
KR20070000578A (ko) * 2005-06-28 2007-01-03 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법
KR20070120255A (ko) * 2006-06-19 2007-12-24 (주)실리콘화일 배면 광 포토다이오드를 이용한 이미지센서 및 그 제조방법
KR20080067048A (ko) * 2007-01-15 2008-07-18 엘지이노텍 주식회사 반도체 패키지

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060048661A (ko) * 2004-06-30 2006-05-18 소니 가부시끼 가이샤 고체 촬상 장치, 카메라 및 고체 촬상 장치의 제조 방법
KR20070000578A (ko) * 2005-06-28 2007-01-03 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법
KR20070120255A (ko) * 2006-06-19 2007-12-24 (주)실리콘화일 배면 광 포토다이오드를 이용한 이미지센서 및 그 제조방법
KR20080067048A (ko) * 2007-01-15 2008-07-18 엘지이노텍 주식회사 반도체 패키지

Also Published As

Publication number Publication date
WO2011155764A2 (ko) 2011-12-15
KR20110134139A (ko) 2011-12-14

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