WO2011115157A1 - レジスト除去装置及びレジスト除去方法 - Google Patents
レジスト除去装置及びレジスト除去方法 Download PDFInfo
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- WO2011115157A1 WO2011115157A1 PCT/JP2011/056170 JP2011056170W WO2011115157A1 WO 2011115157 A1 WO2011115157 A1 WO 2011115157A1 JP 2011056170 W JP2011056170 W JP 2011056170W WO 2011115157 A1 WO2011115157 A1 WO 2011115157A1
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- WIPO (PCT)
- Prior art keywords
- resist
- organic solvent
- substrate
- cluster
- wafer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000003960 organic solvent Substances 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000002904 solvent Substances 0.000 claims abstract description 22
- 238000005507 spraying Methods 0.000 claims abstract description 15
- 239000012159 carrier gas Substances 0.000 claims description 22
- 238000002347 injection Methods 0.000 claims description 19
- 239000007924 injection Substances 0.000 claims description 19
- 238000012546 transfer Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 abstract description 13
- 230000001590 oxidative effect Effects 0.000 abstract description 5
- 239000007921 spray Substances 0.000 abstract description 3
- 238000012545 processing Methods 0.000 description 30
- 238000012986 modification Methods 0.000 description 18
- 230000004048 modification Effects 0.000 description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 238000010884 ion-beam technique Methods 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001485 argon Chemical class 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Definitions
- the present invention relates to a resist removing apparatus and a resist removing method for removing a resist from a substrate on which a resist is formed.
- High-temperature SPM sulfuric acid / hydrogen peroxide mixture
- oxygen plasma are mainly used as a resist removal method for removing unnecessary resist from a wafer after substrate processing steps such as etching and doping (for example, patent documents) 1). Since the chemical structure of a resist after substrate processing such as etching and doping changes, it is often difficult to remove the resist by a cleaning method using a solvent or the like. In particular, in a resist after a high dose, a strong crust layer (carbon rich layer) is formed on the resist surface. Therefore, at present, resist removal is performed using high temperature SPM, oxygen plasma, or the like.
- substrate materials other than resist such as silicon Si, copper Cu, etc.
- substrate materials other than resist such as silicon Si, copper Cu, etc.
- the present invention has been made in view of such circumstances, and an object of the present invention is to form a conventional solvent using a solvent without oxidizing the substrate material other than the resist by clustering the organic solvent and spraying it onto the substrate.
- An object of the present invention is to provide a resist removal apparatus and a resist removal method that can effectively remove a resist as compared with a resist removal method.
- the resist removing apparatus is a resist removing apparatus that removes a resist from a substrate on which a resist is formed, and includes a cluster ejecting unit that ejects a cluster formed of a plurality of organic solvent molecules onto the substrate.
- the resist removing apparatus includes a container that contains the substrate, a vacuum pump that decompresses the inside of the container, and a solvent container that contains an organic solvent. It is provided with the supply path which supplies an organic solvent to the said container from a solvent accommodating part, and the nozzle which injects the organic solvent supplied through this supply path.
- the resist removing apparatus includes a support member that supports the nozzle so that the spraying direction of the organic solvent is a non-normal direction of the substrate, and the resist of the substrate includes the nozzle supported by the support member. And a transfer mechanism for transferring along the film-formed surface.
- the resist removing apparatus is characterized by comprising suction means for sucking a resist dissolved or decomposed by an organic solvent by spraying the cluster.
- the resist removal apparatus includes means for removing a resist dissolved in an organic solvent or decomposed by the organic solvent by spraying the cluster from the substrate, and sending a carrier gas to the outside to the substrate. It is characterized by.
- the resist removal method according to the present invention is a resist removal method for removing a resist from a substrate on which a resist is formed, and a step of spraying a cluster formed of a plurality of organic solvent molecules onto the substrate; And a step of removing the resist dissolved in or decomposed by the organic solvent from the substrate and transporting the resist to the outside.
- the cluster formed by a plurality of organic solvent molecules is sprayed onto the substrate by the cluster spraying means. Since the cluster sprayed onto the substrate is a collection of organic solvent molecules, the substrate material other than the resist is not oxidized. In addition, when a cluster of organic solvent molecules is jetted onto a resist, the organic solvent penetrates into the resist more effectively than in the conventional method using an organic solvent. When organic solvent clusters reach the substrate surface, organic solvent molecules are thought to spread on the substrate surface in a high-density state close to liquid, and it is assumed that the resist can be swollen and dissolved by the organic solvent. ing.
- the resist Due to the permeation of the organic solvent, the resist is also dissolved in the organic solvent or decomposed by the organic solvent, and the joint with the substrate is cut. Therefore, the resist can be effectively removed as compared with the conventional resist removing method using a solvent. Furthermore, when the ion beam of the organic solvent is irradiated, the substrate may be damaged by ions and electrons, but when the organic solvent cluster is sprayed on the substrate, the organic solvent molecules only spread along the substrate surface, The substrate is not damaged.
- the inside of the container is depressurized by a vacuum pump.
- the nozzle of the cluster injection unit injects the organic solvent supplied from the solvent storage unit through the supply path into the storage body.
- the organic solvent sprayed from the nozzle is clustered by decreasing its temperature due to adiabatic expansion. Since low temperature clusters are sprayed onto the substrate, it is possible to remove the resist from the substrate in a lower temperature environment than in the conventional resist removal method, and it is possible to prevent the substrate material from being oxidized.
- the nozzle is supported by the support member so that the injection direction of the organic solvent is a non-normal direction of the substrate, and the nozzle can be transferred along the substrate by the transfer mechanism. Therefore, the dissolved or decomposed resist can be blown out of the substrate by ejecting the cluster by transporting the nozzle to the outside of the substrate while ejecting the cluster.
- the suction means can suck the resist dissolved in the organic solvent or decomposed by the organic solvent and remove it from the substrate by cluster injection of the organic solvent.
- the dissolved or decomposed resist can be blown out of the substrate by sending the carrier gas to the substrate.
- the resist can be effectively removed as compared with the conventional resist removing method using a solvent without oxidizing the substrate material other than the resist.
- FIG. 2 is a sectional view taken along line II-II in FIG. It is explanatory drawing which showed notionally the example of the removal method of a resist. It is explanatory drawing which showed the difference with the cluster injection with respect to a board
- 10 is a side sectional view schematically showing one configuration example of a resist removing apparatus in Modification 1.
- FIG. 10 is an explanatory diagram conceptually showing an example of a method for transporting and removing a dissolved or decomposed resist in Modification 1.
- FIG. FIG. 10 is a side sectional view schematically showing one configuration example of a substrate cleaning apparatus in Modification 2.
- a resist removal apparatus is an apparatus that removes unnecessary resist from a wafer (substrate) after a substrate processing step such as etching or doping, and is particularly a solvent having high affinity for the resist. That is, by spraying a cluster of organic solvent onto the wafer, the resist can be effectively removed without oxidizing the substrate material other than the resist.
- FIG. 1 is a side sectional view schematically showing one configuration example of a resist removing apparatus according to an embodiment of the present invention
- FIG. 2 is a sectional view taken along the line II-II in FIG.
- the resist removal apparatus according to the present embodiment includes a processing chamber (container) 1 having a hollow, substantially rectangular parallelepiped shape that accommodates a wafer W.
- the processing chamber 1 is provided with a loading / unloading port 11 for loading and unloading the wafer W into the processing space in the processing chamber 1. By closing the loading / unloading port 11 with the door body 12, the processing space can be sealed.
- the wafer support 2 includes a table unit 21 on which the wafer W is placed. As shown in FIG. 2, the table portion 21 is provided with three holding members 22 at the top, and holds the wafer W substantially horizontally by bringing the holding members 22 into contact with the three peripheral portions of the wafer W, respectively. It is configured.
- the table portion 21 includes a rotation shaft 23 protruding downward from a substantially central portion thereof, and a lower end portion of the rotation shaft 23 is connected to a motor 24 that rotates the table portion 21 about a rotation center axis in a substantially vertical direction. Yes.
- the wafer W rotates integrally with the table unit 21 in a substantially horizontal plane with the approximate center of the wafer W as the rotation center. In the illustrated example, the wafer W rotates counterclockwise in plan view.
- the driving of the motor 24 is controlled by the control unit 7. Further, in the present embodiment, the configuration in which the table unit 21 is rotated is illustrated, but the table unit 21 is not necessarily rotated, and the wafer support 2 may be configured without the motor 24 and the holding member 22. good.
- cluster injection means 3 for injecting a cluster 100 formed of a plurality of organic solvent molecules having a high affinity for the resist 103 (see FIG. 3) onto the wafer W is provided in the upper portion of the processing chamber 1. Yes.
- the cluster injection means 3 includes a nozzle 31 that injects an organic solvent supplied through a solvent supply pipe 32 described later. When the processing chamber 1 is decompressed, the organic solvent ejected from the nozzle 31 is clustered by adiabatic expansion.
- organic solvents examples include propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, butyl acetate, ethyl lactate, ethyl cellosolve acetate, thinners (resist solubilizers) such as methyl methoxypropionate, acetone, and isopropyl alcohol. It is done.
- the nozzle 31 is supported on the lower surface of the front end of the nozzle arm (support member) 42.
- the nozzle arm 42 is provided above the wafer W supported by the wafer support 2, and supports the nozzle 31 so that the organic solvent injection direction is a non-normal direction of the wafer W.
- the base end portion of the nozzle arm 42 is supported so as to be movable along a guide rail 41 (transfer mechanism) arranged substantially horizontally.
- a drive mechanism 43 (transfer mechanism) that transfers the nozzle arm 42 along the guide rail 41 is provided.
- the guide rail 41 and the drive mechanism 43 constitute a transfer mechanism that transfers the nozzle 31 supported by the nozzle arm 42 along the surface of the wafer W on which the resist 103 is formed.
- the nozzle 31 is connected to a solvent supply pipe (supply path) 32 connected to the solvent storage unit 5 that stores the organic solvent.
- the solvent supply pipe 32 is a supply path for supplying an organic solvent in a gas phase state from the solvent storage unit 5 to the container.
- the solvent supply pipe 32 is provided with an opening / closing valve 33. The opening / closing operation of the opening / closing valve 33 is controlled by the control unit 7.
- an exhaust unit 10 is provided at an appropriate location in the processing chamber 1, and a vacuum pump 6 that depressurizes the inside of the processing chamber 1 to about 10 Pa, for example, is connected to each exhaust unit 10 via a pipe 63. Since clustering of the organic solvent is realized by adiabatic expansion of the organic solvent, it is preferable that the vicinity of the nozzle 31 is in a reduced pressure state.
- the first exhaust unit 10 may be provided in the vicinity of the nozzle 31, and the second and third exhaust units 10, 10 may be provided below the side wall of the processing chamber 1.
- the vacuum pump 6 includes, for example, a turbo molecular pump (TMP: Turbo : Molecular Pump) 61 and a rough vacuum dry vacuum pump (DP: DryDPump) 62 provided in the preceding stage. These operations are controlled by the control unit 7.
- FIG. 3 is an explanatory view conceptually showing an example of a method for removing the resist 103.
- the control unit 7 drives the vacuum pump 6 to depressurize the interior of the processing chamber 1 to about 10 Pa, and controls the operation of the drive mechanism 43 to transfer the nozzle 31 to the substantially central portion of the wafer W. .
- the control unit 7 controls the operation of the drive mechanism 43 to move the nozzle 31 from the central part of the wafer W to the outside in the radial direction at a predetermined speed.
- the organic solvent supplied to the nozzle 31 is sprayed toward the wafer W in the processing chamber 1, but since the inside of the processing chamber 1 is depressurized by the vacuum pump 6, the injected organic solvent is A cluster 100 formed by adiabatic expansion and aggregation of organic solvent molecules is generated.
- the generated organic solvent cluster 100 collides with the resist 103 formed on the wafer W, as shown in FIG. 3A.
- the wafer W temperature reaches about 80 degrees, and in the oxygen plasma, the temperature reaches about 250 degrees.
- the temperature of the cluster 100 reaching the wafer W is approximately equal to or lower than the condensation temperature of the organic solvent. Therefore, the temperature rise of the wafer W can be suppressed.
- the temperature of the wafer W is raised, the removal efficiency of the resist 103 is increased, but the oxidation of other substrate materials is promoted. Oxidation of the substrate material causes a decrease in device performance. Therefore, by using the organic solvent cluster 100, it is possible to effectively suppress the oxidation of the substrate material other than the resist 103 as compared with the conventional method, and the device performance can be improved.
- the organic solvent cluster 100 sprayed onto the wafer W penetrates into the resist 103, and the resist 103 infiltrated with the organic solvent swells as shown in FIG. 3C.
- the hatched portion indicates the resist 103 in which the organic solvent has penetrated.
- the resist 103 in which the organic solvent has penetrated to the inside is also dissolved in the organic solvent or decomposed by the organic solvent.
- the joint between the resist 103 and the wafer W is cut.
- the vertical and horizontal broken lines shown in FIG. 3D indicate how the resist 103 is dissolved and decomposed.
- FIG. 4 is an explanatory diagram showing the difference between cluster injection to the substrate and ion beam irradiation.
- a simulation showing the behavior of the argon atom and the state of the substrate when the substrate is irradiated or jetted with an ion beam and cluster of argon atoms will be described.
- the ion beam of the organic solvent molecule and the cluster 100 exhibit the same behavior as the argon atom.
- 4A and 4B show the substrate before and after irradiation and jetting of the ion beam and cluster, and the argon ions and argon clusters irradiated on the substrate.
- FIG. 4A shows an ion beam in which, for example, 2000 argon atoms are collected.
- the ion beam has an energy of 20 keV. Accordingly, each argon atom constituting the ion beam in which 2000 argon atoms are gathered has an energy of 10 eV. Thus, it can be seen that when high-energy argon atoms collide with the substrate, the substrate is physically damaged as shown in FIG. 4B. Needless to say, damage to the substrate leads to device failure and performance degradation.
- the right diagram in FIG. 4B shows a cluster in which, for example, 20000 argon atoms are gathered.
- the cluster 100 has energy of 20 keV.
- each argon atom constituting an ion beam in which 20000 argon atoms are gathered has an energy of 1 eV.
- the organic solvent cluster 100 when the organic solvent cluster 100 is sprayed onto the wafer W, the organic solvent molecules spread on the surface of the wafer W in a high density state such as a liquid without damaging the wafer W. Conceivable. Since the organic solvent molecules spread on the surface of the wafer W in a state close to a liquid, the reaction between the organic solvent and the resist 103 is considered to be in a state close to a liquid phase reaction. It is expected that it can swell, dissolve or decompose.
- the dissolved and decomposed resist 103 is blown off radially outward of the wafer W by the organic solvent cluster 100 sprayed onto the wafer W, and is transferred outside the system.
- FIG. 5 is an explanatory view conceptually showing an example of a method for transporting and removing the dissolved or decomposed resist 103.
- the nozzle 31 is transferred to the outer side in the radial direction of the wafer W by the drive mechanism 43 while spraying the organic solvent cluster 100, so that the resist 103 dissolved and decomposed on the wafer W is transferred in the transfer direction, that is, the wafer W. It is conveyed and removed to the outside.
- FIG. 6 is an explanatory view conceptually showing an example of a method for removing a resist having a crust layer formed thereon.
- an insulating layer 101, a gate 102, and a resist 103 are formed on the wafer W, and a crust layer 104 is formed on the resist 103 with a high dose.
- the control unit 7 operates the vacuum pump 6, the motor 24, and the drive mechanism 43 in the same procedure described with reference to FIG.
- the wafer W is transferred to a substantially central portion and the wafer W placed on the table portion 21 is rotated.
- control unit 7 opens the on-off valve 33 to supply the organic solvent to the nozzle 31 and move the nozzle 31 radially outward from the central portion of the wafer W.
- the organic solvent cluster 100 generated by the injection of the organic solvent collides with the resist 103 and the crust layer 104 formed on the wafer W, as shown in FIG. 6A.
- the organic solvent cluster 100 sprayed onto the wafer W penetrates into the resist 103 even when the crust layer 104 is present, and the resist 103 into which the organic solvent has penetrated is shown in FIG. 6C. Swell. The crust layer 104 is divided by the swelling of the resist 103. Then, as shown in FIG. 6D, the resist 103 in which the organic solvent has penetrated to the inside is dissolved in the organic solvent or decomposed by the organic solvent. Then, the joint between the resist 103 and the wafer W is cut.
- the dissolved and decomposed resist 103 and crust layer 104 are blown off radially outward of the wafer W by the organic solvent cluster 100 sprayed onto the wafer W, and transported out of the system. Is done.
- the resist 103 is effectively removed from the wafer W without oxidizing the substrate material other than the resist 103 as compared with the conventional resist removal method using a solvent. Can be removed.
- the resist 103 can be removed from the wafer W in a lower temperature environment than in the conventional resist removal method. Therefore, oxidation of the substrate material can be prevented and device performance can be improved.
- the dissolved and decomposed resist 103 can be carried out of the system by the transfer of the nozzle 31 and the injection of the cluster 100.
- the processing chamber 1 can be downsized as compared with the case where the wafer W is transferred.
- the resist removal apparatus according to Modification 1 is configured to transport the resist 103 dissolved and decomposed by the cluster injection of the organic solvent out of the system by a transport gas that transports the resist 103. Since the resist removal apparatus according to the first modification differs from the above-described embodiment only in the configuration relating to the delivery of the nozzle 31 and the carrier gas, the differences will be mainly described below.
- FIG. 7 is a side sectional view schematically showing one configuration example of the resist removing apparatus in the first modification.
- the nozzles 231 of the cluster injection unit 203 constituting the resist removal apparatus according to the modification 1 are supported by the nozzle arms 42 so that the organic solvent injection direction is substantially the normal direction of the wafer W.
- the dissolution and decomposition efficiency of the resist 103 can be further increased as compared with the case of injecting in an oblique direction.
- a carrier gas outlet 13 for sending a carrier gas for carrying the resist 103 out of the system to the surface of the wafer W is provided at an appropriate location on the side wall of the processing chamber 1.
- the carrier gas delivery port 13 may be provided at a portion facing the exhaust unit 10 provided above the table unit 21.
- a carrier gas supply pipe 81 connected to a carrier gas supply unit 8 that supplies carrier gas such as argon gas and nitrogen gas is connected to the exhaust unit 10.
- the carrier gas supply unit 8 is a gas cylinder containing, for example, argon gas, nitrogen gas, or the like.
- the carrier gas supply unit 8 is provided with an on-off valve 82.
- the opening / closing operation of the opening / closing valve 82 is controlled by the control unit 7.
- the opening / closing timing of the opening / closing valve 82 is not particularly limited.
- the control unit 7 may be configured to open / close the opening / closing valve 33 and the opening / closing valve 82 alternately.
- FIG. 8 is an explanatory diagram conceptually showing an example of a method for transporting and removing the dissolved or decomposed resist 103 in the first modification.
- the on-off valve 82 is opened, and the carrier gas supplied into the processing chamber 1 flows on the surface of the wafer W and is exhausted from the exhaust unit 10. In this way, the dissolved and decomposed resist 103 is transported out of the system on the transport gas by the cluster injection of the organic solvent.
- the resist 103 can be removed more effectively by spraying the organic solvent substantially perpendicularly to the wafer W, and the carrier gas Is delivered to the wafer W, so that the dissolved or decomposed resist 103 can be effectively transferred to the outside of the wafer W.
- the resist removal apparatus according to Modification 2 is configured to fix the cluster spraying means to the processing chamber and move the wafer side, and further includes a suction unit (suction means) for sucking the resist removed by the cluster spraying. It is configured as follows. Since the resist removal apparatus according to the second modification differs from the above-described embodiment only in the configuration, the difference will be mainly described below.
- FIG. 9 is a side sectional view schematically showing one configuration example of the resist removing apparatus in the second modification.
- the resist removal apparatus according to Modification 2 includes a processing chamber 301 in which the nozzles 31 of the cluster ejecting means 3 are fixed at a substantially central portion of the top plate.
- the top plate of the processing chamber 301 is provided with a suction unit 9 that sucks the resist removed by the jetting of the clusters, and the nozzle 31 and the suction unit 9 are provided side by side.
- a suction pump 91 is connected to the suction unit 9 via a suction pipe 92.
- a driving mechanism 343 that moves the table unit 21 in the horizontal direction together with the motor 24 is provided at the bottom of the processing chamber 301.
- the drive mechanism 343 can move the table unit 21 in such a range that at least the entire surface of the wafer W can be scanned by the cluster ejection unit 3. Further, the processing chamber 301 has a lateral width necessary for moving the table unit 21 within a range in which the entire surface of the wafer W can be scanned by the cluster ejection unit 3.
- the nozzle 31 is fixed to the top plate of the processing chamber 301, the possibility that the wafer W is contaminated with particles from the drive mechanism 343 can be reduced as compared with the embodiment. it can.
- a carrier gas delivery port may be further provided in the processing chamber according to the second modification. In this case, the resist can be removed more efficiently.
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Abstract
Description
グ等の基板処理後のレジストは、化学構造が変化するため、溶剤等を用いた洗浄手法で除去することが困難な場合が多い。特に高ドーズ後のレジストにおいては、レジスト表面に強固なクラスト層(炭素リッチ層)が形成される。このため、現状では、高温SPM、酸素プラズマ等を用いてレジスト除去が行われている。
また、有機系溶剤分子のクラスターをレジストに噴射した場合、有機系溶剤を用いた従来手法に比べて、該有機系溶剤はより効果的にレジストの内部に浸透する。有機系溶剤のクラスターが基板表面に到達すると、有機系溶剤分子が液体に近い高密度状態で基板表面に広がると考えられており、有機系溶剤によるレジストの膨潤及び溶解が可能であると推測されている。有機系溶剤の浸透によって、レジストはその内部も有機系溶剤に溶解し、又は該有機系溶剤によって分解され、基板との接合部が切断される。従って、溶剤を用いた従来のレジスト除去方法に比べてレジストを効果的に除去することが可能である。
更に、有機溶剤のイオンビームを照射した場合、イオン及び電子によって基板が損傷する虞があるが、有機溶剤のクラスターを基板に噴射した場合、有機溶剤分子は基板表面に沿って広がるのみであり、基板が損傷することは無い。
図1は、本発明の実施の形態に係るレジスト除去装置の一構成例を模式的に示した側断面図、図2は、図1のII-II線断面図である。本実施の形態に係るレジスト除去装置は、ウェハWを収容する中空略直方体の処理室(収容体)1を備える。処理室1には、図2に示すように、処理室1内の処理空間にウェハWを搬入及び搬出させるための搬入出口11が設けられている。この搬入出口11を扉体12で閉じることにより、処理空間を密閉状態にすることができる。
次に、レジスト103を成膜し、エッチング、イオン注入等の基板処理を施したウェハWから、上述のレジスト除去装置を用いてレジスト103を除去する方法を説明する。
図3は、レジスト103の除去方法の一例を概念的に示した説明図である。図3Aに示すように、ウェハWには、絶縁層101、ゲート102及びレジスト103が成膜されている。まず、制御部7は、真空ポンプ6を駆動させて、処理室1の内部を約10Paに減圧させ、駆動機構43の動作を制御することによって、ノズル31をウェハWの略中央部へ移送する。そして、モータ24を駆動させることによって、テーブル部21に載置されたウェハWを回転させ、次いで、制御部7は、開閉弁33を開状態にさせることによって、有機系溶剤をノズル31へ供給させる。また、制御部7は、駆動機構43の動作を制御することによって、ノズル31をウェハWの中央部から径方向外側へ所定速度で移送させる。ノズル31へ供給された有機系溶剤は、処理室1内のウェハWに向けて噴射されるが、処理室1の内部が真空ポンプ6によって減圧されているため、噴射された有機系溶剤は、断熱膨張し、有機系溶剤分子が集合してなるクラスター100が生成される。生成された有機系溶剤のクラスター100は、図3Aに示すように、ウェハWに形成されたレジスト103に衝突する。
次に、基板処理によってクラスト層が形成されたレジストを、ウェハWから上述のレジスト除去装置を用いて除去する方法を説明する。
図6は、クラスト層が形成されたレジストの除去方法の一例を概念的に示した説明図である。図6Aに示すように、ウェハWには、絶縁層101、ゲート102及びレジスト103が成膜されており、更にレジスト103には、高ドーズによってクラスト層104が形成されている。制御部7は、図3で説明した同様の手順で、真空ポンプ6、モータ24、及び駆動機構43を動作させることによって、処理室1の内部を約10Paに減圧させ、ノズル31をウェハWの略中央部へ移送し、テーブル部21に載置されたウェハWを回転させる。そして、制御部7は、開閉弁33を開状態にさせることによって、有機系溶剤をノズル31へ供給させ、ノズル31をウェハWの中央部から径方向外側へ移送させる。有機系溶剤の噴射によって生成された有機系溶剤のクラスター100は、図6Aに示すように、ウェハWに形成されたレジスト103及びクラスト層104に衝突する。
変形例1に係るレジスト除去装置は、有機系溶剤のクラスター噴射によって溶解及び分解したレジスト103を搬送する搬送ガスによって系外へ搬送するように構成されている。変形例1に係るレジスト除去装置は、ノズル31及び搬送ガスの送出に係る構成のみが上述の実施の形態と異なるため、以下では主に上記相異点について説明する。
変形例2に係るレジスト除去装置は、クラスター噴射手段を処理室に固定し、ウェハ側を移送させるように構成し、更にクラスターの噴射によって除去されたレジストを吸引する吸引部(吸引手段)を備えるように構成されている。変形例2に係るレジスト除去装置は、斯かる構成のみが上述の実施の形態と異なるため、以下では主に上記相異点について説明する。
2 ウェハ支持台
3 クラスター噴射手段
5 溶剤収容部
6 真空ポンプ
7 制御部
8 搬送ガス供給部
9 吸引部(吸引手段)
13 搬送ガス送出口
31 ノズル
32 溶剤供給管(供給路)
33 開閉弁
41 ガイドレール(移送手段)
42 ノズルアーム(支持部材)
43 駆動機構(移送手段)
81 搬送ガス供給管
82 開閉弁
100 クラスター
103 レジスト
104 クラスト層
W ウェハ(基板)
Claims (6)
- レジストを成膜した基板からレジストを除去するレジスト除去装置において、
有機系溶剤分子が複数集合してなるクラスターを前記基板に噴射するクラスター噴射手段を備える
ことを特徴とするレジスト除去装置。 - 前記基板を収容する収容体と、
該収容体の内部を減圧する真空ポンプと、
有機系溶剤を収容する溶剤収容部と
を備え、
前記クラスター噴射手段は、
前記溶剤収容部から前記収容体へ有機系溶剤を供給する供給路と、
該供給路を通じて供給された有機系溶剤を噴射するノズルと
を備える
ことを特徴とする請求項1に記載のレジスト除去装置。 - 有機系溶剤の噴射方向が前記基板の非法線方向になるように前記ノズルを支持する支持部材と、
該支持部材に支持された前記ノズルを前記基板のレジストが成膜された面に沿って移送する移送機構と
を備えることを特徴とする請求項2に記載のレジスト除去装置。 - 前記クラスターの噴射によって有機系溶剤に溶解し又は該有機溶剤によって分解したレジストを吸引する吸引手段を備える
ことを特徴とする請求項1乃至請求項3のいずれか一つに記載のレジスト除去装置。 - 前記クラスターの噴射によって有機系溶剤に溶解し又は該有機溶剤によって分解したレジストを前記基板から除去し、外部へ搬送する搬送ガスを基板に送出する手段を備える
請求項1乃至請求項4のいずれか一つに記載のレジスト除去装置。 - レジストを成膜した基板からレジストを除去するレジスト除去方法において、
有機系溶剤分子が複数集合してなるクラスターを前記基板に噴射する工程と、
前記クラスターの噴射によって有機系溶剤に溶解し又は該有機溶剤によって分解したレジストを前記基板から除去し、外部へ搬送する工程と
を有することを特徴とするレジスト除去方法。
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CN2011800134265A CN102906858A (zh) | 2010-03-18 | 2011-03-16 | 抗蚀剂除去装置和抗蚀剂除去方法 |
KR1020127024236A KR20120135411A (ko) | 2010-03-18 | 2011-03-16 | 레지스트 제거 장치 및 레지스트 제거 방법 |
US13/594,412 US20120312334A1 (en) | 2010-03-18 | 2012-08-24 | Resist removal apparatus and resist removal method |
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US20150255316A1 (en) * | 2012-09-28 | 2015-09-10 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning apparatus and vacuum processing system |
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JP6347572B2 (ja) * | 2012-07-12 | 2018-06-27 | 東邦化成株式会社 | リフトオフ装置およびリフトオフ方法 |
US8975009B2 (en) * | 2013-03-14 | 2015-03-10 | Tokyo Electron Limited | Track processing to remove organic films in directed self-assembly chemo-epitaxy applications |
CN103286091B (zh) * | 2013-06-09 | 2017-09-19 | 京东方科技集团股份有限公司 | 一种基板的清洗方法 |
JP6545053B2 (ja) * | 2015-03-30 | 2019-07-17 | 東京エレクトロン株式会社 | 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法 |
US11747742B2 (en) | 2017-04-11 | 2023-09-05 | Visera Technologies Company Limited | Apparatus and method for removing photoresist layer from alignment mark |
JP7296601B2 (ja) * | 2019-06-25 | 2023-06-23 | パナソニックIpマネジメント株式会社 | 素子チップの洗浄方法および素子チップの製造方法 |
JP7340396B2 (ja) | 2019-09-24 | 2023-09-07 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
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JP2004310067A (ja) * | 2003-03-27 | 2004-11-04 | Hoya Corp | マスクブランクス用ガラス基板の製造方法、マスクブランクスの製造方法、転写マスクの製造方法及び半導体装置の製造方法 |
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US20120312334A1 (en) | 2012-12-13 |
CN102906858A (zh) | 2013-01-30 |
JP2011198933A (ja) | 2011-10-06 |
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