WO2010122921A1 - フタロシアニンナノワイヤー、それを含有するインキ組成物及び電子素子、並びにフタロシアニンナノワイヤーの製造方法 - Google Patents
フタロシアニンナノワイヤー、それを含有するインキ組成物及び電子素子、並びにフタロシアニンナノワイヤーの製造方法 Download PDFInfo
- Publication number
- WO2010122921A1 WO2010122921A1 PCT/JP2010/056579 JP2010056579W WO2010122921A1 WO 2010122921 A1 WO2010122921 A1 WO 2010122921A1 JP 2010056579 W JP2010056579 W JP 2010056579W WO 2010122921 A1 WO2010122921 A1 WO 2010122921A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phthalocyanine
- group
- atom
- nanowire
- ink composition
- Prior art date
Links
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 title claims abstract description 288
- 239000002070 nanowire Substances 0.000 title claims abstract description 208
- 239000000203 mixture Substances 0.000 title claims abstract description 112
- 238000004519 manufacturing process Methods 0.000 title claims description 57
- 239000003960 organic solvent Substances 0.000 claims abstract description 42
- -1 polyphenylene vinylene Polymers 0.000 claims description 69
- 239000006185 dispersion Substances 0.000 claims description 56
- 125000001424 substituent group Chemical group 0.000 claims description 54
- 239000002131 composite material Substances 0.000 claims description 42
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical group [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 claims description 38
- 239000002904 solvent Substances 0.000 claims description 28
- 150000002430 hydrocarbons Chemical group 0.000 claims description 24
- 125000000217 alkyl group Chemical group 0.000 claims description 23
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical group CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 229910052725 zinc Inorganic materials 0.000 claims description 14
- 229910003472 fullerene Inorganic materials 0.000 claims description 13
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 12
- 125000003118 aryl group Chemical group 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 11
- 150000001408 amides Chemical group 0.000 claims description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Natural products CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 10
- 239000002635 aromatic organic solvent Substances 0.000 claims description 10
- 125000001072 heteroaryl group Chemical group 0.000 claims description 10
- 125000005647 linker group Chemical group 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000004793 Polystyrene Substances 0.000 claims description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229920002223 polystyrene Polymers 0.000 claims description 9
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 claims description 8
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 8
- 125000005543 phthalimide group Chemical group 0.000 claims description 8
- 239000004417 polycarbonate Substances 0.000 claims description 8
- 229920000515 polycarbonate Polymers 0.000 claims description 8
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical group ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- 125000002015 acyclic group Chemical group 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- XTHPWXDJESJLNJ-UHFFFAOYSA-N sulfurochloridic acid Chemical compound OS(Cl)(=O)=O XTHPWXDJESJLNJ-UHFFFAOYSA-N 0.000 claims description 6
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 claims description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 5
- 229940117389 dichlorobenzene Drugs 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 150000002367 halogens Chemical class 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052745 lead Inorganic materials 0.000 claims description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 5
- 150000002815 nickel Chemical group 0.000 claims description 5
- 229920000123 polythiophene Polymers 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 4
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 claims description 4
- 229920000553 poly(phenylenevinylene) Polymers 0.000 claims description 4
- 239000008096 xylene Substances 0.000 claims description 4
- 230000001376 precipitating effect Effects 0.000 claims description 3
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 claims description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 2
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 125000000168 pyrrolyl group Chemical group 0.000 claims description 2
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 claims 2
- 125000003944 tolyl group Chemical group 0.000 claims 2
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical group C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 claims 1
- KMHSUNDEGHRBNV-UHFFFAOYSA-N 2,4-dichloropyrimidine-5-carbonitrile Chemical compound ClC1=NC=C(C#N)C(Cl)=N1 KMHSUNDEGHRBNV-UHFFFAOYSA-N 0.000 claims 1
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical group C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 claims 1
- 125000004957 naphthylene group Chemical group 0.000 claims 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 118
- 230000008569 process Effects 0.000 abstract description 26
- 239000000758 substrate Substances 0.000 abstract description 11
- 239000011248 coating agent Substances 0.000 abstract description 10
- 238000000576 coating method Methods 0.000 abstract description 10
- 238000007639 printing Methods 0.000 abstract description 10
- 229920002457 flexible plastic Polymers 0.000 abstract description 4
- 239000004615 ingredient Substances 0.000 abstract 1
- 239000000976 ink Substances 0.000 description 98
- 239000010408 film Substances 0.000 description 67
- 239000000126 substance Substances 0.000 description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 27
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 239000013078 crystal Substances 0.000 description 21
- 239000011347 resin Substances 0.000 description 20
- 229920005989 resin Polymers 0.000 description 20
- 239000000243 solution Substances 0.000 description 20
- 150000005846 sugar alcohols Polymers 0.000 description 18
- 125000000524 functional group Chemical group 0.000 description 17
- 239000007787 solid Substances 0.000 description 17
- 229920000642 polymer Polymers 0.000 description 16
- 239000004721 Polyphenylene oxide Substances 0.000 description 15
- 238000003917 TEM image Methods 0.000 description 15
- 229920000570 polyether Polymers 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- 229920006391 phthalonitrile polymer Polymers 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 11
- 239000010419 fine particle Substances 0.000 description 11
- XQZYPMVTSDWCCE-UHFFFAOYSA-N phthalonitrile Chemical class N#CC1=CC=CC=C1C#N XQZYPMVTSDWCCE-UHFFFAOYSA-N 0.000 description 11
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 10
- 229910021645 metal ion Inorganic materials 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 9
- 238000001556 precipitation Methods 0.000 description 9
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 8
- 238000001035 drying Methods 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 150000003839 salts Chemical class 0.000 description 8
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000011324 bead Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 6
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 239000012153 distilled water Substances 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000003921 oil Substances 0.000 description 5
- 150000007530 organic bases Chemical class 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 125000003277 amino group Chemical group 0.000 description 4
- 125000004397 aminosulfonyl group Chemical group NS(=O)(=O)* 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 125000001033 ether group Chemical group 0.000 description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 4
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- 125000001624 naphthyl group Chemical group 0.000 description 4
- 239000003973 paint Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000049 pigment Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229930195734 saturated hydrocarbon Natural products 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 4
- 229920003169 water-soluble polymer Polymers 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 150000004703 alkoxides Chemical class 0.000 description 3
- 125000004414 alkyl thio group Chemical group 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000005119 centrifugation Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KEQGZUUPPQEDPF-UHFFFAOYSA-N 1,3-dichloro-5,5-dimethylimidazolidine-2,4-dione Chemical compound CC1(C)N(Cl)C(=O)N(Cl)C1=O KEQGZUUPPQEDPF-UHFFFAOYSA-N 0.000 description 2
- WTFAGPBUAGFMQX-UHFFFAOYSA-N 1-[2-[2-(2-aminopropoxy)propoxy]propoxy]propan-2-amine Chemical compound CC(N)COCC(C)OCC(C)OCC(C)N WTFAGPBUAGFMQX-UHFFFAOYSA-N 0.000 description 2
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 description 2
- 229920008347 Cellulose acetate propionate Polymers 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical group CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 238000006751 Mitsunobu reaction Methods 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 235000002597 Solanum melongena Nutrition 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 2
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 2
- 239000004480 active ingredient Substances 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 238000005576 amination reaction Methods 0.000 description 2
- 229910002115 bismuth titanate Inorganic materials 0.000 description 2
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000013065 commercial product Substances 0.000 description 2
- VVOLVFOSOPJKED-UHFFFAOYSA-N copper phthalocyanine Chemical compound [Cu].N=1C2=NC(C3=CC=CC=C33)=NC3=NC(C3=CC=CC=C33)=NC3=NC(C3=CC=CC=C33)=NC3=NC=1C1=CC=CC=C12 VVOLVFOSOPJKED-UHFFFAOYSA-N 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 2
- 125000003493 decenyl group Chemical group [H]C([*])=C([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 125000002350 geranyl group Chemical group [H]C([*])([H])/C([H])=C(C([H])([H])[H])/C([H])([H])C([H])([H])C([H])=C(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 125000006038 hexenyl group Chemical group 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 2
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004365 octenyl group Chemical group C(=CCCCCCC)* 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 238000006268 reductive amination reaction Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Chemical compound O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 125000005287 vanadyl group Chemical group 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 238000010947 wet-dispersion method Methods 0.000 description 2
- SCZNXLWKYFICFV-UHFFFAOYSA-N 1,2,3,4,5,7,8,9-octahydropyrido[1,2-b]diazepine Chemical compound C1CCCNN2CCCC=C21 SCZNXLWKYFICFV-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 description 1
- LEUDXJCSVPEZGZ-UHFFFAOYSA-N 3,4,4a,5,6,7,8,9-octahydro-2h-pyrido[3,2-c]azepine Chemical compound C1CCNCC2CCCN=C21 LEUDXJCSVPEZGZ-UHFFFAOYSA-N 0.000 description 1
- ZRIIKSZIELTYKB-UHFFFAOYSA-N 4-(1,3-benzothiazol-2-yl)benzene-1,2-dicarbonitrile Chemical compound C1=C(C#N)C(C#N)=CC=C1C1=NC2=CC=CC=C2S1 ZRIIKSZIELTYKB-UHFFFAOYSA-N 0.000 description 1
- LJUVUOSWARAIBZ-UHFFFAOYSA-N 4-(2,6-dimethylphenoxy)benzene-1,2-dicarbonitrile Chemical compound CC1=CC=CC(C)=C1OC1=CC=C(C#N)C(C#N)=C1 LJUVUOSWARAIBZ-UHFFFAOYSA-N 0.000 description 1
- CRZSSXUMRNESCC-UHFFFAOYSA-N 4-phenoxybenzene-1,2-dicarbonitrile Chemical compound C1=C(C#N)C(C#N)=CC=C1OC1=CC=CC=C1 CRZSSXUMRNESCC-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000799 K alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000004373 Pullulan Substances 0.000 description 1
- 229920001218 Pullulan Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QQHJESKHUUVSIC-UHFFFAOYSA-N antimony lead Chemical compound [Sb].[Pb] QQHJESKHUUVSIC-UHFFFAOYSA-N 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 125000005620 boronic acid group Chemical group 0.000 description 1
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- HKQOBOMRSSHSTC-UHFFFAOYSA-N cellulose acetate Chemical compound OC1C(O)C(O)C(CO)OC1OC1C(CO)OC(O)C(O)C1O.CC(=O)OCC1OC(OC(C)=O)C(OC(C)=O)C(OC(C)=O)C1OC1C(OC(C)=O)C(OC(C)=O)C(OC(C)=O)C(COC(C)=O)O1.CCC(=O)OCC1OC(OC(=O)CC)C(OC(=O)CC)C(OC(=O)CC)C1OC1C(OC(=O)CC)C(OC(=O)CC)C(OC(=O)CC)C(COC(=O)CC)O1 HKQOBOMRSSHSTC-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910001429 cobalt ion Inorganic materials 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- ONCCWDRMOZMNSM-FBCQKBJTSA-N compound Z Chemical compound N1=C2C(=O)NC(N)=NC2=NC=C1C(=O)[C@H]1OP(O)(=O)OC[C@H]1O ONCCWDRMOZMNSM-FBCQKBJTSA-N 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000005677 ethinylene group Chemical group [*:2]C#C[*:1] 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000005549 heteroarylene group Chemical group 0.000 description 1
- 125000000592 heterocycloalkyl group Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 125000001841 imino group Chemical group [H]N=* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N isonitrile group Chemical group N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- COQAIRYMVBNUKQ-UHFFFAOYSA-J magnesium;barium(2+);tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Mg+2].[Ba+2] COQAIRYMVBNUKQ-UHFFFAOYSA-J 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000006277 sulfonation reaction Methods 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 125000003375 sulfoxide group Chemical group 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- HIFJUMGIHIZEPX-UHFFFAOYSA-N sulfuric acid;sulfur trioxide Chemical compound O=S(=O)=O.OS(O)(=O)=O HIFJUMGIHIZEPX-UHFFFAOYSA-N 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 125000000101 thioether group Chemical group 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B47/00—Porphines; Azaporphines
- C09B47/04—Phthalocyanines abbreviation: Pc
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B47/00—Porphines; Azaporphines
- C09B47/04—Phthalocyanines abbreviation: Pc
- C09B47/08—Preparation from other phthalocyanine compounds, e.g. cobaltphthalocyanineamine complex
- C09B47/24—Obtaining compounds having —COOH or —SO3H radicals, or derivatives thereof, directly bound to the phthalocyanine radical
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B47/00—Porphines; Azaporphines
- C09B47/04—Phthalocyanines abbreviation: Pc
- C09B47/08—Preparation from other phthalocyanine compounds, e.g. cobaltphthalocyanineamine complex
- C09B47/24—Obtaining compounds having —COOH or —SO3H radicals, or derivatives thereof, directly bound to the phthalocyanine radical
- C09B47/26—Amide radicals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B69/00—Dyes not provided for by a single group of this subclass
- C09B69/10—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds
- C09B69/108—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds containing a phthalocyanine dye
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
- C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/41—Organic pigments; Organic dyes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/70—Additives characterised by shape, e.g. fibres, flakes or microspheres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/34—Heterocyclic compounds having nitrogen in the ring
- C08K5/3412—Heterocyclic compounds having nitrogen in the ring having one nitrogen atom in the ring
- C08K5/3415—Five-membered rings
- C08K5/3417—Five-membered rings condensed with carbocyclic rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/298—Physical dimension
Definitions
- the present invention relates to a phthalocyanine nanowire and an ink composition / electronic device containing the same, and further relates to a method for producing the phthalocyanine nanowire.
- an “organic transistor (OFET)” using an organic substance in the semiconductor portion of the transistor is attracting attention (see Non-Patent Document 1).
- a semiconductor made of such an organic substance (organic semiconductor) is soft and can be processed at a low temperature, and generally has high affinity with a solvent. For this reason, it has the advantage of being able to be produced on a flexible plastic substrate using a wet process such as coating or printing at a low price.
- a wet process such as coating or printing at a low price.
- Phthalocyanines such as phthalocyanine or phthalocyanine derivatives are one of typical organic semiconductors, and are known to exhibit good transistor characteristics by controlling the higher order structure, that is, the molecular arrangement and assembly state ( Non-patent document 2).
- phthalocyanines have low solvent solubility, it is difficult to produce an element by a wet process, and when used for an electronic element, a dry process such as vacuum deposition or sputtering is generally used. Since such a dry process is complicated, it is difficult to provide a low-cost electronic element that is one of the characteristics of an organic semiconductor.
- a technique in which a transistor is manufactured by a wet process by introducing a soluble substituent into phthalocyanines to enhance solvent solubility (see Patent Document 1).
- the transistor characteristics are inferior as compared with the dry process.
- the phthalocyanine molecules have a dimensional structure and a crystal structure arranged in a certain direction. Among them, a one-dimensional wire crystal is particularly useful. is there.
- this wire-like crystal is a nanowire whose wire diameter is micrometer or less, Preferably it is 100 nm or less.
- Crystals of phthalocyanines are widely used as colorants for paints of printing inks, and many techniques for controlling the crystal size and shape are also known.
- a solvent salt milling method for example, Patent Document 2 in which an inorganic salt and an organic solvent are mixed with metal phthalocyanine, and the pigment is finely pulverized by a grinding apparatus, or a large amount of metal phthalocyanine is dissolved in sulfuric acid.
- micronization is performed by a method such as crystallization that precipitates in water (for example, Patent Literature 3), nanowire-like crystals of phthalocyanines cannot be obtained using these methods.
- the present invention has a wire-like crystal of phthalocyanines, which is a typical organic semiconductor, particularly a nano-sized fine wire structure in which the wire width (minor axis) is 100 nm or less, and the length of the wire relative to the minor axis.
- An object of the present invention is to provide a phthalocyanine nanowire having a thickness ratio (length / minor axis) of 10 or more, and an ink composition containing the phthalocyanine nanowire.
- Another object of the present invention is to provide a low-cost electronic device by forming a film by a wet process such as coating or printing using the ink composition containing the phthalocyanine nanowire.
- the present invention provides a phthalocyanine nanowire having a minor axis of 100 nm or less and a ratio of the length to the minor axis (length / minor axis) of 10 or more, and the phthalocyanine nanowire and an organic solvent.
- an ink composition is provided.
- this invention provides the film
- the present invention also provides an electronic device comprising the film.
- this invention provides the manufacturing method of the phthalocyanine nanowire used for the said ink composition, a film
- a nano-sized wire-like crystal having excellent semiconductor characteristics has a nano-sized fine wire-like structure with a wire width (minor axis) of 100 nm or less, with respect to the minor axis of the wire.
- a phthalocyanine nanowire having a length ratio (length / minor axis) of 10 or more can be provided.
- the ink composition containing the nanowire can be formed into a film by a wet process such as coating or printing, it is possible to provide a lightweight and inexpensive electronic device that is hard to break on a flexible plastic substrate. .
- FIG. 1 is a schematic view of a membrane according to the present invention. It is a schematic cross section of the transistor which is an electronic device by this invention. 1 is a schematic plane equivalent circuit diagram of a transistor array including a transistor as an electronic element according to the present invention. It is a schematic cross section regarding one pixel in the transistor array containing the transistor which is an electronic element by this invention.
- 2 is a transmission electron micrograph of phthalocyanine nanowires in Example 1.
- FIG. 2 is a transmission electron micrograph of phthalocyanine nanowires in Example 1.
- FIG. 2 is a transmission electron micrograph of phthalocyanine nanowires in Example 2.
- FIG. 2 is a transmission electron micrograph of phthalocyanine nanowires in Example 2.
- FIG. 1 is a schematic view of a membrane according to the present invention. It is a schematic cross section of the transistor which is an electronic device by this invention. 1 is a schematic plane equivalent circuit diagram of a transistor array including a transistor as an electronic element according to the present invention.
- 4 is a transmission electron micrograph of phthalocyanine nanowires in Example 3.
- 4 is a transmission electron micrograph of phthalocyanine nanowires in Example 3.
- 4 is a transmission electron micrograph of phthalocyanine nanowires in Example 4.
- 6 is a transmission electron micrograph of phthalocyanine nanowires in Example 5.
- FIG. 6 is a transmission electron micrograph of phthalocyanine nanowires in Example 5.
- FIG. 6 is a transmission electron micrograph of phthalocyanine nanowires in Example 6.
- 7 is a transmission electron micrograph of phthalocyanine nanowires in Example 7.
- FIG. 4 is a transmission electron micrograph of phthalocyanine nanowires in Example 8.
- 4 is a transmission electron micrograph of phthalocyanine nanowires in Example 8.
- An ink composition comprising the phthalocyanine nanowire and the organic solvent as described in essential components, 3.1.
- An electronic device comprising the film according to claim 1, 5.1.
- Step (a) of obtaining a composite by dissolving phthalocyanine and a phthalocyanine derivative in an acid, and then precipitating in a poor solvent (2) Step (b) of obtaining a finely divided composite by making the composite fine particles; (3) a step (c) of obtaining a dispersion by dispersing the micronized composite in an organic solvent; (4) A method of producing a phthalocyanine nanowire, comprising the step (d) of heating the dispersion to form a nanowire.
- phthalocyanine contained in phthalocyanine nanowires As the phthalocyanine of the present invention, a known and commonly used phthalocyanine having a central metal atom can be used.
- the central metal atom is not limited as long as it constitutes a nanowire.
- the phthalocyanine nanowire of the present invention is a phthalocyanine nanowire containing the phthalocyanine and a phthalocyanine derivative represented by the following general formula (1) or (2).
- Y 1 to Y 4 represents a linking group that bonds the phthalocyanine skeleton to R 1 to R 4 ;
- R 1 to R 4 may have SO 3 H, CO 2 H, an alkyl group that may have a substituent, or a substituent ( (Oligo) aryl group, optionally substituted (oligo) heteroaryl group, optionally substituted phthalimide group or optionally substituted fullerene, Y 1 to Y 4 are — (CH 2 ) n — (n represents an integer of 1 to 10), —CH ⁇ CH—, —C ⁇ C—, —O—, —NH—, —S—, In the case of a bonding group represented by —S (O)
- aryl group which may have a substituent
- (oligo) heteroaryl group which may have a substituent
- phthalimide group which may have a substituent or fullerenes which may have a substituent
- b, c and d each independently represents an integer of 0 to 2, of which at least one is 1.
- the metal atom X forming a complex with the phthalocyanine of the present invention is not particularly limited as long as it is commonly used as the central metal of the metal phthalocyanine, but preferred metal atoms include copper, zinc, cobalt, nickel, tin, lead, magnesium. And any one kind of metal atom selected from silicon, and iron.
- metal phthalocyanine coordinated with titanyl (TiO), vanadyl (VO), or aluminum chloride (AlCl) can also be used.
- a compound not containing the central metal X can also be used as the phthalocyanine derivative of the present invention.
- Y 1 to Y 4 can be used without particular limitation as long as they are linking groups that bind the phthalocyanine ring and R 1 to R 4 .
- linking groups include alkylene groups, arylene groups, heteroarylene groups, vinylene bonds, ethynylene, sulfide groups, ether groups, sulfoxide groups, sulfonyl groups, urea groups, urethane groups, amide groups, amino groups, imino groups. Groups, ketone groups, ester groups, and the like.
- fullerenes can also be used as the linking group of the present invention.
- R 1 to R 4 are functional groups that can be bonded to the phthalocyanine ring via the bonding groups Y 1 to Y 4 .
- Examples of such functional groups include alkyl groups, alkyloxy groups, amino groups, mercapto groups, carboxy groups, sulfonic acid groups, silyl groups, silanol groups, boronic acid groups, nitro groups, phosphoric acid groups, aryl groups, Examples include heteroaryl groups, cycloalkyl groups, heterocycloalkyl groups, nitrile groups, isonitrile groups, ammonium salts or fullerenes, phthalimide groups, and more specifically, aryl groups such as phenyl groups and naphthyl groups, And heteroaryl groups such as indoyl group and pyridinyl group and meryl group.
- specifically preferred groups include SO 3 H, CO 2 H, an alkyl group, an alkyl group having an ether group or an amino group, an aryl group which may have a substituent, and a substituent.
- examples include a heteroaryl group, a phthalimide group which may have a substituent, or a fullerene which may have a substituent.
- alkyl group which may have a substituent examples include alkyl groups having 1 to 20 carbon atoms, and lower alkyl groups such as a methyl group, an ethyl group and a propyl group are particularly preferable. Further, an alkyl group having an ether group or an amino group is also preferable.
- M is an integer of 1 to 20, and R and R ′ are each independently an alkyl group having 1 to 20 carbon atoms or an aryl group.
- the group represented by can also be used.
- the (oligo) aryl group which may have a substituent is preferably a phenyl group which may have a substituent, a naphthyl group which may have a substituent, or a substituent.
- An oligophenylene group or an oligonaphthyl group which may have a substituent can be exemplified. Examples of the substituent include conventionally known substituents that can be substituted on the aryl group.
- the (oligo) heteroaryl group which may have a substituent is preferably a pyrrole group which may have a substituent, a thiophene group which may have a substituent, or a substituent. Examples thereof include a good oligopyrrole group and an oligothiophene group which may have a substituent. Examples of the substituent include conventionally known substituents that can be substituted on the heteroaryl group.
- a fullerene (PCBM) etc. can be mentioned.
- phthalimide group examples include, for example,
- A, b, c and d each independently represents an integer of 0 to 2, and represents the number of substituents Y 1 R 1 to Y 4 R 4 substituted on the phthalocyanine ring. As for the number of substituents, at least one of the phthalocyanine rings is 1.
- phthalocyanine derivative represented by the general formula (1) of the present invention include, but are not limited to, the following.
- n is an integer of 1 to 20
- m is a numerical value of 1 to 4 representing the average number of functional groups introduced.
- R 1 to R 4 are each independently Represents a hydrogen atom, halogen, an alkyl group having 1 to 20 carbon atoms, an alkyloxy group or an alkylthio group.
- R 1 to R 2 are each independently Represents a hydrogen atom, halogen, an alkyl group having 1 to 20 carbon atoms, an alkyloxy group or an alkylthio group.
- a phthalocyanine derivative having no central metal in the above formulas (4) to (12) can also be used.
- X is any one selected from the group consisting of a copper atom, a zinc atom, a cobalt atom, a nickel atom, a tin atom, a lead atom, a magnesium atom, a silicon atom, and an iron atom
- Z is the following formula ( a) or a group represented by (b), wherein a, b, c and d each independently represents an integer of 0 to 2, of which at least one is 1.
- n is an integer of 4 to 100, Q is each independently a hydrogen atom or a methyl group, and Q 'is an acyclic hydrocarbon group having 1 to 30 carbon atoms.
- n is an integer of 1 to 20, and R and R ′ are each independently an alkyl group having 1 to 20 carbon atoms.
- a compound in which the phthalocyanine ring is substituted with at least one sulfamoyl group can be exemplified.
- the sulfamoyl group to be introduced can be used without particular limitation as long as it is at least one per phthalocyanine ring, but is preferably 1 or 2, more preferably 1.
- the position to be substituted is not particularly limited.
- the molecular weight of the general formula (a) is not particularly limited, and may be various functional groups such as an alkyl group or an ether group, an oligomer in which these functional groups have several repeating units, or a polymer having many repeating units.
- the number average molecular weight is preferably 10,000 or less because, in the formation of nanowires, crystal growth of phthalocyanine due to steric hindrance is not inhibited, and sufficiently long nanowires can be obtained.
- the polymer include a polymer made of a polymer of an alkyl group or a vinyl compound, a polymer having a urethane bond, an ester bond, or an ether bond.
- a polyalkylene oxide copolymer represented by the general formula (a) can be mentioned, and any polyalkylene oxide such as an ethylene oxide polymer and an ethylene oxide / propylene oxide copolymer is block-polymerized. Those that are randomly polymerized can also be used.
- Q ′ may be a linear or branched hydrocarbon group having 1 to 30 carbon atoms as an acyclic hydrocarbon group, and the hydrocarbon group may be a saturated hydrocarbon group or an unsaturated hydrocarbon group. Either hydrogen group may be used.
- Examples of such acyclic hydrocarbon group include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, n-pentyl group, n-hexyl group, n-octyl group, 2 Examples thereof include linear or branched saturated hydrocarbon groups such as -ethyl-hexyl group, n-dodecyl group, stearyl group, n-tetracosyl group, n-triacontyl group.
- the hydrocarbon group may have a double bond or a triple bond, for example, a vinyl group, a propenyl group, an isopropenyl group, a butenyl group, a pentenyl group.
- Linear or branched unsaturated hydrocarbon groups such as isoprene group, hexenyl group, heptenyl group, octenyl group, decenyl group, geranyl group, ethynyl group, 2-propynyl group, 2-pentene-4-ynyl group, etc. be able to.
- the repeating number n of the polyalkylene oxide moiety is not particularly limited, but it is preferably 4 or more and 100 or less, more preferably from the viewpoint of the affinity with the dispersion solvent, that is, the dispersion stability of the resulting nanowires. It is 5 or more and 80 or less, and more preferably 10 or more and 50 or less.
- the phthalocyanine derivative represented by the general formula (1) used in the present invention can be obtained by combining, for example, a copper phthalocyanine sulfonyl chloride and a polyether amine having an amine at the end of the polyether main chain (hereinafter, “ It can be produced by reacting with “polyether monoamine”.
- Copper phthalocyanine sulfonyl chloride as a raw material can be obtained by reaction of copper phthalocyanine with chlorosulfonic acid or thionyl chloride.
- the polyether monoamine which is the other raw material can be obtained by a known and conventional method.
- the hydroxyl group at the end of the polyether skeleton can be obtained by reductive amination using a nickel / copper / chromium catalyst, and the hydroxyl group at the end of the polyether skeleton can be obtained by Mitsunobu reaction (reference document: Synthesis). , 1-28 (1981)), and then amination by hydrazine reduction (reference: Chem. Commun., 2062-2063 (2003)).
- Polyether monoamine is also available as a commercial product, for example, “JEFFAMINE (trade name) M series” from Huntsman Corporation.
- Examples of the phthalocyanine derivative represented by the general formula (3) used in the present invention include a compound represented by [Chemical Formula 16], but are not limited thereto.
- N is an integer of 4 to 100.
- the number of introduced polyalkylene oxide chains bonded to phthalocyanine through a sulfamoyl bond is 4 in phthalocyanine. 0.2 to 3.0 for one benzene ring.
- the phthalocyanine derivative that can be used in the present invention may have a group represented by the general formula (b) in addition to the phthalocyanine derivative. This derivative may be reacted with an amine represented by the following formula instead of the polyetheramine used for introducing the group represented by the general formula (a).
- R and R ′ are each independently an alkyl group having 1 to 20 carbon atoms.
- Preferred examples of R and R ′ include a lower alkyl group, particularly a methyl group, and m is preferably an integer of 1 to 6.
- Specific preferred phthalocyanine derivatives include the following.
- the group represented by R 1 to R 4 may have a group in which SO 3 H or CO 2 H is used, and SO 3 H or
- the number of CO 2 H groups is not limited, but can be 1 to 4, more preferably 1 to 2. These groups may have one type of group or two types of groups. Introduction of SO 3 H or CO 2 H can be performed by a known and conventional method.
- the number of sulfamoyl groups of the phthalocyanine derivative represented by the general formula (3) is not limited, but can be 1 to 4, more preferably 1 to 2. These groups may have one type of group or two types of groups. These phthalocyanine derivatives can be synthesized by a known and commonly used method.
- the number next to the parentheses in the formula of the above phthalocyanine derivative represents the average number of functional groups introduced into the phthalocyanine molecule, and the preferred number of functional groups introduced is 0.2 to 3. 0, more preferably in the range of 0.5 to 2.0.
- the various phthalocyanine derivatives can be synthesized by introducing side chains or functional groups into the phthalocyanine ring.
- the copper phthalocyanine sulfamoyl compound described in [Chemical Formula 16] can be synthesized by the above-described method, and the sulfonated copper phthalocyanine described in [Chemical Formula 4], [Chemical Formula 5], and [Chemical Formula 6] converts copper phthalocyanine into fuming sulfuric acid. It can be obtained by heating in (sulfur trioxide concentration: 20%), and the compound of [Chemical 9] can be synthesized, for example, by the method disclosed in the patent document (US Pat. No. 2,761,868).
- the phthalocyanine derivative can also be obtained by a known and publicly used phthalocyanine synthesis method described in, for example, JP-A Nos. 2005-145896 and 2007-39561.
- a known and publicly used phthalocyanine synthesis method described in, for example, JP-A Nos. 2005-145896 and 2007-39561.
- Various phthalonitrile compounds such as phthalonitrile and 4- (1,3-benzothiazol-2-yl) -phthalonitrile are mixed with orthophthalonitrile having no substituent at an arbitrary ratio, and 1,8-
- a metal salt such as copper (II) sulfate or zinc (II) in the presence of an organic base such as diazabicyclo [5,4,0] undec-7-ene
- an organic base such as diazabicyclo [5,4,0] undec-7-ene
- the number of the functional groups of the phthalocyanine derivative that can be synthesized using the phthalonitrile compound as one of the raw materials can be arbitrarily changed by changing the mixing ratio of the phthalonitrile compound and orthophthalonitrile,
- the mixture of the phthalonitrile derivative and orthophthalonitrile may be 1: 3, and an average of 1.5 is desired to be introduced.
- the compound can be synthesized at a ratio of 3: 5 using the method described in the patent document.
- a phthalocyanine derivative having a plurality of types of functional groups can be synthesized from two or more types of phthalonitrile compounds and orthophthalonitrile.
- the phthalonitrile derivative having a substituent includes various known and commonly used phthalonitrile derivatives in addition to the above.
- Examples of the phthalonitrile derivative include those described in JP-A-2007-519636, paragraph 0001, and JP-A-2007-526881.
- the phthalonitrile derivative linked with the fullerenes described in Chemical Formula 9 in the paragraph is also included as a raw material for synthesizing the phthalocyanine derivative that can be used in the present invention.
- the nanowire of this invention has the characteristics which can obtain the various phthalocyanine nanowire from which length and a short axis differ by mix
- An ink composition can be obtained by dispersing phthalocyanine nanowires having a minor axis of 100 nm or less and a ratio of length to minor axis (length / minor axis) of 10 or more in an organic solvent. it can.
- the solvent type used in the ink composition of the present invention is not particularly limited as long as it stably disperses phthalocyanine nanowires. Even if it is a single organic solvent, an organic solvent in which two or more types are mixed is used. Although it may be used, an amide solvent is preferred from the viewpoint that phthalocyanine nanowires can be dispersed favorably and stably.
- the solvent which comprises an ink composition can be suitably selected with the kind of phthalocyanine derivative contained in a phthalocyanine nanowire, for example, the phthalocyanine nanowire containing the derivative of [Chemical 9] is disperse
- preferable organic solvents that can be used include, in addition to amide solvents, for example, aromatic solvents such as toluene, xylene, ethylbenzene, and halogenated aromatic organic solvents such as chlorobenzene and dichlorobenzene. be able to.
- the halogen organic solvent include organic solvents such as chloroform, methylene chloride, and dichloroethane.
- the content of phthalocyanine nanowires in the ink composition is preferably 0.05 to 20% by mass, particularly 0%, in order to impart printability and form a favorable film. It is preferably 1 to 10% by mass.
- a resin component can be added as a rheology adjustment or binder component.
- the resin is not particularly limited as long as it is a commonly used resin, and it may be a single resin or a combination of two or more resins. Polymethyl methacrylate or polystyrene, polycarbonate, polyvinyl Carbazole, polythiophenes, polyphenylene vinylenes and the like are preferable.
- the content of these resins is preferably 20% by mass or less, particularly 10% by mass or less when an electrically inactive resin such as polymethyl methacrylate, polystyrene, or polycarbonate is used. Is preferred.
- the ink composition of the present invention can be used by adding various surfactants and the like as needed mainly for constitutional components, ink surface tension adjustment and leveling improvement.
- a pigment dispersion obtained by previously dispersing these color pigment alone or fine particle powder in a dispersant or an organic solvent as long as the semiconductor characteristics of the film can be maintained.
- One kind or two or more kinds can be used.
- EXCEDIC BLUE0565, EXCEDIC RED 0759, EXCEDIC YELLOW 0599, EXCEDIC GREEN0358, EXCEDIC YELLOW 0648 (trade name, made by DIC), Sakai Aerosil series (product name: Evosia, Pyrosilo, made by Cyrus, Pyrosilo, , Silopure, Thylosphere, Silo Mask, Silwell, Fuji Balloon (trade name, manufactured by Fuji Silysia), PMA-ST, IPA-ST (trade name, Nissan Chemical), NANOBIC 3600 series, NANOBIC 3800 series (trade name, manufactured by Big Chemie), etc.
- Sakai Aerosil series product name: Evosia, Pyrosilo, made by Cyrus, Pyrosilo, , Silopure, Thylosphere, Silo Mask, Silwell, Fuji Balloon (trade name, manufactured by Fuji Silysia), PMA-ST, IPA-ST (trade name, Nissan
- the average particle size of the constitutional component added to the ink is preferably 1 to 150 nm, and more preferably 5 to 50 nm.
- the volume average particle diameter can be easily measured by, for example, a dynamic light scattering method.
- These constitutional components are contained in a total solid content of 90% by mass or less, preferably 70% by mass or less.
- hydrocarbon-based, silicon-based, fluorine-based, or a mixed system of two or more of these surfactants can be applied.
- a preferred fluorosurfactant is a nonionic fluorosurfactant having a linear perfluoroalkyl group and having a chain length of C6 or more, more preferably C8 or more.
- Specific examples include, for example, Megafuck F-482, Megafuck F-470 (R-08), Megafuck F-472SF, Megafuck R-30, Megafuck F-484, Megafuck F-486, Mega There are Facque F-172D, MegaFuck F178RM (the trade name, manufactured by DIC Corporation), etc., but there is no particular limitation. These may be used alone or in combination of two or more.
- These surfactants are contained in the total ink composition as an active ingredient in an amount of 5.0% by mass or less, preferably 1.0% by mass or less as an active ingredient.
- the ink composition thus obtained was formed into a film by printing or coating (wet process), and dried, whereby the minor axis was 100 nm or less and the ratio of the length to the minor axis (length)
- a film containing phthalocyanine nanowires having a / minor axis) of 10 or more can be obtained.
- a known and commonly used method can be adopted without any particular limitation, and specifically, an inkjet method, a gravure method, a gravure offset method, an offset method, a letterpress method, a letterpress inversion.
- Method screen method, micro contact method, reverse method, air doctor coater method, blade coater method, air knife coater method, roll coater method, squeeze coater method, impregnation coater method, transfer roll coater method, kiss coater method, cast coater method, spray Examples include a coater method, a die coater method, a spin coater method, a bar coater method, a slit coater method, and a drop cast method.
- an ink jet method, a letterpress inversion method, and a microcontact method are preferable.
- FIG. 1 is a schematic diagram of the film 1 containing phthalocyanine nanowires obtained in this manner and having a minor axis of 100 nm or less and a ratio of the length to the minor axis (length / minor axis) of 10 or more. Shown in The film 1 can be formed of only the phthalocyanine nanowire 2, but the binder resin 3 is further contained in order to fix and hold the phthalocyanine nanowire 2 and to ensure electrical stability. Is preferred.
- the binder resin 3 is not particularly limited as long as it is a publicly known one, and two or more kinds of resins may be used in combination even if they are single resins. Although it does not matter, polymethyl methacrylate or polystyrene, polycarbonate, polyvinyl carbazole, polythiophenes, polyphenylene vinylenes, etc., or a combination of these resins is particularly preferred.
- the rate is preferably 95% by mass or less, and particularly preferably 40% by mass or less.
- OFET organic transistor
- a film formed of the ink composition according to the present invention and a source electrode and a drain electrode connected to the film were formed on a substrate, and a gate electrode was formed thereon via a gate insulating film.
- a top gate type can be mentioned.
- a bottom electrode type in which a gate electrode is first formed on a substrate, and a film formed from the ink composition according to the present invention through a gate insulating film, and a source electrode and a drain electrode connected to the film, can be formed.
- FIG. 2 has a film (phthalocyanine nanowire film 1) containing phthalocyanine nanowires 2 having a minor axis of 100 nm or less and a ratio of length to the minor axis (length / minor axis) of 10 or more.
- a schematic diagram of a transistor 4 configured as a bottom gate bottom contact type as an electronic element is shown.
- the thickness of the phthalocyanine nanowire film 1 can be set as appropriate, and can be, for example, 50 to 10,000 nm.
- it is preferable that most of the arrangement state in the length direction of the phthalocyanine nanowires 2 in the phthalocyanine nanowire film 10 is the direction between the source electrode 5 and the drain electrode 6.
- the short diameter of the phthalocyanine nanowire is preferably 10 nm to 100 nm, more preferably 20 to 100 nm because the current per unit electrode width can be increased.
- the ratio of the length to the minor axis (length / minor axis) is preferably 40 or more, more preferably 80 or more, in order to ensure the carrier path between the electrodes (channel).
- the substrate 7 is made of silicon, glass, or a flexible resin sheet.
- a plastic film can be used as the sheet.
- the plastic film include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polyetherimide, polyetheretherketone, polyphenylene sulfide, polyarylate, polyimide, polycarbonate (PC), Examples thereof include films made of cellulose triacetate (TAC), cellulose acetate propionate (CAP), and the like.
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- PES polyethersulfone
- PES polyetherimide
- polyetheretherketone polyphenylene sulfide
- PC polycarbonate
- TAC cellulose triacetate
- CAP cellulose acetate propionate
- the material for forming the source electrode 5, the drain electrode 6 and the gate electrode 8 is not particularly limited as long as it is a conductive material.
- a known conductive polymer whose conductivity is improved by doping or the like for example, conductive polyaniline, conductive polypyrrole, conductive polythiophene, a complex of polyethylenedioxythiophene and polystyrenesulfonic acid, or the like is also preferably used. Among them, those having low electrical resistance at the contact surface with the semiconductor layer are preferable.
- a method for forming an electrode As a method for forming an electrode, a method for forming an electrode through a pattern mask or the like using a method such as vapor deposition or sputtering using the above-mentioned material as a raw material, or a conductive thin film formed using a method such as vapor deposition or sputtering is known. There are a method of forming an electrode using the photolithographic method and a lift-off method, and a method of etching using a resist such as thermal transfer or ink jet on a metal foil such as aluminum or copper.
- the conductive polymer solution or dispersion, or the conductive fine particle dispersion may be directly patterned by inkjet, or may be formed from the coating film by lithography, laser ablation, or the like.
- a method of patterning an ink containing a conductive polymer or conductive fine particles, a conductive paste, or the like by a printing method such as a letterpress, intaglio, planographic, screen printing, letterpress inversion method, or microcontact method can also be used.
- Various insulating films can be used as the gate insulating layer 9.
- a polymer organic material in view of cost merit, it is preferable to use a polymer organic material, and in order to obtain high characteristics, it is preferable to use an inorganic oxide having a high relative dielectric constant.
- the polymer organic material include polyimide, polyamide, polyester, polyacrylate, photo radical polymerization system, photo cation polymerization system photo-curing resin, copolymer containing acrylonitrile component, polyvinyl phenol, polyvinyl alcohol, novolac resin, Known and conventional polymers such as epoxy resins and cyanoethyl pullulan can be used.
- inorganic oxides include silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, barium strontium titanate, barium zirconate titanate, lead zirconate titanate, lead lanthanum titanate, strontium titanate, Examples include barium titanate, barium magnesium fluoride, bismuth titanate, strontium bismuth titanate, strontium bismuth tantalate, bismuth tantalate niobate, and yttrium trioxide. Of these, silicon oxide, aluminum oxide, tantalum oxide, and titanium oxide are preferable. Inorganic nitrides such as silicon nitride and aluminum nitride can also be suitably used.
- a dry process such as a vacuum deposition method, a molecular beam epitaxial growth method, an ion cluster beam method, a low energy ion beam method, an ion plating method, a CVD method, a sputtering method, an atmospheric pressure plasma method, Inkjet method, gravure method, gravure offset method, offset method, letterpress method, letterpress inversion method, screen method, microcontact method, reverse method, air doctor coater method, blade coater method, air knife coater method, roll coater method, squeeze coater method , Impregnation coater method, transfer roll coater method, kiss coater method, cast coater method, spray coater method, die coater method, spin coater method, bar coater method, slit coater method, drop cast method, etc.
- an ink jet method, letterpress reverse method include wet process such as micro contact method, may be appropriately used depending on the material.
- the wet process of inorganic oxide is a method of applying and drying a liquid in which inorganic oxide fine particles are dispersed in an arbitrary organic solvent or water using a dispersion aid such as a surfactant as required.
- a so-called sol-gel method in which a solution of a precursor, for example, an alkoxide body is applied and dried can be used.
- the dry film thickness of these insulating films is 0.1 to 2 ⁇ m, preferably 0.3 to 1 ⁇ m.
- the transistor as the electronic element according to the present invention can constitute an electronic component module by integration.
- the electronic component module include a transistor array as a back substrate such as a display, an inverter as a RFID logic circuit, and a ring oscillator.
- 3 and 4 are a schematic plane equivalent circuit diagram of the transistor array and a schematic cross-sectional view relating to one pixel in the transistor array.
- the transistor array has a large number of transistors A arranged in a matrix.
- B is a gate bus line connected to the gate electrode of the transistor
- C is a source bus line connected to the source electrode of the transistor A.
- An output element D is connected to the drain electrode of each transistor A.
- the output element D corresponds to a display element, such as a liquid crystal or an electrophoretic element.
- a sealing layer 10 is provided on the phthalocyanine nanowire film 1 and covered with a light shielding film 11. Further, the entire structure is covered with the interlayer insulating film 12.
- phthalocyanines are known to be soluble in an acid solvent such as sulfuric acid.
- the phthalocyanine and the phthalocyanine derivative are first combined with sulfuric acid, chlorosulfuric acid, methanesulfonic acid. And dissolved in an acid solvent such as trifluoroacetic acid. Thereafter, it is poured into a poor solvent such as water to precipitate a complex of the phthalocyanine and phthalocyanine derivative.
- the mixing ratio of the phthalocyanine derivative to the phthalocyanine is preferably in the range of 5% by mass to 200% by mass, and more preferably 30% by mass to 120% by mass.
- the mixing ratio is 5% by mass or more, there is a tendency that the phthalocyanine derivative has a functional group or a side chain of the polymer, so that the crystal grows in one direction through the steps described later and becomes a good nanowire.
- the functional group and the polymer side chain are not so many as to inhibit crystal growth, and therefore, the nanowire is successfully formed through unidirectional crystal growth to become an amorphous state or a particulate state. There is no.
- the amount of the phthalocyanine and phthalocyanine derivative added to the acid solvent is not particularly limited as long as there is no undissolved content and the concentration can be completely dissolved, but the range in which the solution has sufficient fluidity is maintained. Is preferably 20% by mass or less.
- the solution in which the phthalocyanine and the phthalocyanine derivative are dissolved is poured into a poor solvent such as water to precipitate the complex of the phthalocyanine and the phthalocyanine derivative, the solution is added from 0.01% by mass with respect to the poor solvent.
- a range of 50% by mass is preferred. If it is 0.01% by mass or more, the concentration of the complex to be precipitated is sufficiently high, so that the solid content can be easily recovered. If it is 50% by mass or less, all the phthalocyanine and phthalocyanine derivatives are precipitated to form a solid. It becomes a complex and has no dissolved components and is easy to recover.
- the phthalocyanine and the phthalocyanine derivative are insoluble or sparingly soluble liquid with respect to the poor solvent, but the homogeneity of the complex to be precipitated can be kept high, and an environment suitable for the miniaturization process described later.
- the most preferable poor solvent may be water with a small load or an aqueous solution containing water as a main component.
- the composite can be filtered using a filter paper and a Buchner funnel to remove acidic water and washed with water until the filtrate becomes neutral to recover the water-containing composite.
- the recovered complex may be dehydrated and dried to remove moisture, or may be kept in a water-containing state when it is microparticulated by a wet dispersion method in the next step.
- the method is not particularly limited as long as the composite obtained through the step (a) can be formed into fine particles, but the composite is preferably formed into fine particles by a wet dispersion method.
- the composite obtained in the step (a) is wet-dispersed with a dispersion solvent such as water using a bead mill, a paint conditioner or the like, and the composite is made into fine particles.
- a dispersion solvent such as water using a bead mill, a paint conditioner or the like
- the bead diameter may be considered to be in the range of 0.01 mm to 2 mm.
- the micromedia can be most preferably microparticulated in the range of 100% by mass to 1000% by mass with respect to the dispersion of the composite.
- the water by dehydrating and drying the obtained aqueous dispersion of the micronized composite.
- Filtration, centrifugation, evaporation by a rotary evaporator etc. can be mentioned.
- drying may be further performed using a vacuum dryer or the like until moisture is completely removed.
- the water-containing composite (a) may be dried to completely remove moisture, and then wet-dispersed in an organic solvent such as N-methylpyrrolidone or dichlorobenzene to obtain a micronized composite.
- the micronized composite obtained through the step (b) is dispersed in an organic solvent used for nanowire formation such as N-methylpyrrolidone.
- the organic solvent is not particularly limited as long as it does not have low affinity with phthalocyanines.
- amide solvents and aromatic organic solvents having high affinity with phthalocyanines are preferable.
- phthalocyanines N, N-dimethylacetamide, N, N-dimethylformamide, N-methylpyrrolidone, toluene, xylene, ethylbenzene, chlorobenzene and dichlorobenzene, which have a particularly high affinity can be mentioned as the most suitable organic solvents.
- the amide organic solvent and the aromatic organic solvent can be used alone, but the amide organic solvent and the aromatic organic solvent can be used in a mixture at an arbitrary ratio. It can also be used in combination with a solvent.
- organic solvent that can be used in combination with an amide organic solvent and an aromatic organic solvent, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, diethylene glycol monobutyl ether acetate, from the point that nanowire formation can be promoted in the heating step described later, Examples include glycol esters such as diethylene glycol monoethyl ether acetate.
- organic solvents may be added after the micronized complex is dispersed in an amide organic solvent and an aromatic organic solvent, or after mixing with the organic solvent in advance, the micronized complex is added and dispersed. Also good.
- the solid content concentration of the micronized composite with respect to the organic solvent is 0.1% from the viewpoint of appropriate fluidity and prevention of aggregation. It is in the range of 20%, more preferably 1% to 10%.
- the micronized complex when the micronized complex is obtained by water dispersion in the step (b), the micronized complex dehydrated by centrifugation or the like can be dispersed in the organic solvent described above, Even if it contains, a nanowire can be obtained by the process mentioned later.
- phthalocyanine nanowires By heating the organic solvent dispersion of the micronized composite obtained through the step (c), phthalocyanine nanowires can be produced.
- the heating temperature is preferably in the range of 50 ° C. to 250 ° C., more preferably 100 ° C. to 200 ° C. If the heating temperature is 50 ° C. or higher, the crystal growth of phthalocyanines can be sufficiently induced, and can be grown into nanowires by the desired unidirectional crystal growth. Aggregation and fusion are hardly observed, and the crystal grows in the width direction and does not become coarse.
- There is no particular limitation on the heating time but it is preferable to heat for at least 10 minutes until the length of the phthalocyanine nanowire grows to 100 nm or more.
- a phthalocyanine nanowire having a width (minor axis) of 100 nm or less and a wire length ratio (length / minor axis) of 10 or more is obtained. Can be manufactured.
- the mechanism for forming the nanowire in the step (d) is not necessarily clear, but the step ( The particle size of the micronized composite obtained in b) is 10 nm to 20 nm, and the micronized composite particles are connected in the crystal plane direction of phthalocyanine by heating in the step (d), and crystal growth is only in one direction. By doing so, it can be assumed that the nanowire is formed.
- the organic solvent in the step (c) functions as a good dispersion medium for phthalocyanine, and it is considered that nanowire formation is further promoted by inducing unidirectional crystal growth.
- This production method is characterized in that an isoindoline compound and a metal ion are reacted in a water-soluble polyhydric alcohol in the presence of a phthalocyanine derivative.
- a phthalocyanine derivative, an isoindoline compound, and a metal ion are dissolved in a water-soluble polyhydric alcohol and sufficiently stirred to obtain a uniform mixed solution.
- the temperature at the time of stirring is higher than 80 ° C.
- the phthalocyanine compound having a non-uniform shape may be generated in a part where mixing is insufficient, or the yield may be reduced. Preferably it is done.
- a polyhydric alcohol solution of the phthalocyanine derivative, the isoindoline compound and a metal salt is mixed at a temperature of 80 ° C. or lower to obtain a mixed solution, and then the mixed solution is heated to 80 to 200, 100 to 180 ° C. with stirring. By doing so, the isoindoline compound and the metal ion are reacted to obtain a solid reaction product.
- the mixed polyhydric alcohol solution containing the isoindoline compound and the metal salt is dropped into the water-soluble polyhydric alcohol solution in which the phthalocyanine derivative is dissolved, and the isoindoline compound is set in the same temperature range as described above. And a metal ion can be reacted to obtain a solid reaction product.
- the mixing ratio of the isoindoline compound and the metal salt is preferably adjusted so that the metal ion is 1 to 4 mol with respect to 4 mol of the starting phthalonitrile compound from the stoichiometric viewpoint.
- Water-soluble polyhydric alcohols that can be used in the present invention are ⁇ -glycols such as ethylene glycol, propylene glycol, 1,2-butanediol, and 2,3-butanediol, and glycerin. Or what adjoins the carbon atom which three hydroxyl groups couple
- Examples of the phthalocyanine derivative used in the present invention include a compound in which the phthalocyanine ring is substituted with at least one sulfamoyl group and is soluble in a polyhydric alcohol.
- the compound represented by (1) can be mentioned.
- Y in the general formula (1) in the present production method is not particularly limited as long as it is a water-soluble polymer chain having a number average molecular weight of 1000 or more, and more preferably a water-soluble polymer having a molecular weight of 1000 or more and 10,000 or less.
- any water-soluble polymer chain can be used without particular limitation as long as it is water-soluble and has an affinity for water-soluble polyhydric alcohols.
- Residue of polymer having partial structure is mentioned, more specifically, polymer chain having partial structure of all polyalkylene oxides such as ethylene oxide polymer and ethylene oxide / propylene oxide copolymer, block polymerization or random polymerization But it can also be used.
- Y is a polymer chain derived from an alkylene oxide copolymer which is a group represented by the general formula (2), and its hydrophilicity and lipophilicity are optimized according to the solubility in the polyhydric alcohol used. It is desirable to do.
- each Q is independently a hydrogen atom or a methyl group
- Q ′ may be either a linear hydrocarbon group or a branched hydrocarbon group as an acyclic hydrocarbon group having 1 to 30 carbon atoms
- the hydrocarbon group may be either a saturated hydrocarbon group or an unsaturated hydrocarbon group.
- Examples of such acyclic hydrocarbon group include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, n-pentyl group, n-hexyl group, n-octyl group, 2 Examples thereof include linear or branched saturated hydrocarbon groups such as -ethyl-hexyl group, n-dodecyl group, stearyl group, n-tetracosyl group, n-triacontyl group.
- the hydrocarbon group may have a double bond or a triple bond, for example, a vinyl group, a propenyl group, an isopropenyl group, a butenyl group, a pentenyl group.
- Linear or branched unsaturated hydrocarbon groups such as isoprene group, hexenyl group, heptenyl group, octenyl group, decenyl group, geranyl group, ethynyl group, 2-propynyl group, 2-pentene-4-ynyl group, etc. be able to.
- the repeating number n of the polyalkylene oxide moiety is preferably 4 or more and 100 or less, more preferably 5 or more and 80 or less, and even more preferably 10 or more and 50 or less. If the repeating number n is less than 4, the affinity with the dispersion medium is insufficient, and if it exceeds 100, the dispersion stability tends to be lowered.
- the phthalocyanine derivative represented by the general formula (1) can be obtained by, for example, combining copper phthalocyanine sulfonyl chloride and a polyether amine having an amine at the end of the polyether main chain (hereinafter referred to as “polyether”) by carefully combining known and commonly used methods. It can be produced by reacting "monoamine” and abbreviation).
- the raw material copper phthalocyanine sulfonyl chloride can be obtained by reaction of copper phthalocyanine with chlorosulfonic acid and / or thionyl chloride.
- the polyether monoamine which is the other raw material can be obtained by a known and conventional method.
- the hydroxyl group at the end of the polyether skeleton can be obtained by reductive amination using a nickel / copper / chromium catalyst, and the hydroxyl group at the end of the polyether skeleton can be obtained by Mitsunobu reaction (reference document: Synthesis). , 1-28 (1981)), and then amination by hydrazine reduction (reference: Chem. Commun., 2062-2063 (2003)).
- Polyether monoamine is also available as a commercial product, for example, “JEFFAMINE (trade name) M series” from Huntsman Corporation.
- Examples of the phthalocyanine derivative represented by the general formula (1) used in the present invention include the compound of the above formula (3), but are not limited thereto.
- Q represents a hydrogen atom or a methyl group
- propylene oxide / ethylene oxide 30/70 (molar ratio)
- average value of n 47.
- the isoindoline compound used in the present invention can be synthesized by a known method.
- 1,2-diazabicyclo (5.4.0) undecene-7 (hereinafter referred to as “DBU”) is prepared by heating and dissolving a phthalonitrile compound such as orthophthalonitrile in a polyhydric alcohol such as ⁇ -glycol or glycerin.
- the reaction is carried out in the presence or absence of an organic base such as a metal alkoxide to synthesize a phthalonitrile compound soluble in a water-soluble polyhydric alcohol and the polyhydric alcohol reaction product.
- the structure of the reaction product has already been estimated as an isoindoline compound by our research. For this reason, in the present invention, the reaction product is hereinafter referred to as an isoindoline compound.
- the phthalonitrile compound that can be used in the present invention includes orthophthalonitrile and those having two —CN groups at the ortho position of the benzene ring or naphthalene ring.
- orthophthalonitrile and those having two —CN groups at the ortho position of the benzene ring or naphthalene ring.
- Ring A in the formula represents a benzene ring or a naphthalene ring which may have a substituent of an alkyl group, an alkoxy group, an alkylthio group, or a halogen group.
- ring A is a benzene ring
- a functional group such as a halogen atom or an alkyl group may be introduced at other sites.
- the reaction temperature of the phthalonitrile compound and the water-soluble polyhydric alcohol is 80 ° C. or higher when no organic base or metal alkoxide is added. However, since a metal-free phthalocyanine compound is produced at a high temperature, a process such as filtration is required It is not preferable. In addition, since the reaction may take a long time when the temperature is low, the reaction is preferably carried out in the range of 100 ° C. to 130 ° C. for 15 minutes to 8 hours, more preferably 1 hour to 3 hours. . It is preferable that the obtained solution containing the isoindoline compound is immediately cooled to 80 ° C. or lower immediately after the completion of the reaction to stop the further progress of the reaction. Further, during the reaction, it is preferable to avoid mixing moisture in the air, such as by placing in a nitrogen atmosphere, and it is preferable to dehydrate the water-soluble polyhydric alcohol in advance.
- the reaction can be carried out at a lower temperature than when the organic base is not used, thereby suppressing generation of a metal-free phthalocyanine compound. It is convenient to do. Specifically, the reaction may be performed in the range of 30 ° C. to 100 ° C. for 10 minutes to 2 hours.
- the mass ratio when the phthalonitrile compound and the water-soluble polyhydric alcohol are reacted when the concentration of the phthalonitrile compound is lower than 2%, the productivity when the metal phthalocyanine compound is synthesized later
- the viscosity is higher than 40%, the viscosity of the obtained solution is remarkably increased, and the amount of metal-free phthalocyanine compound produced may increase, so that the concentration of the phthalonitrile compound is 2% by mass to 40%. It is preferable to set it in the range of 5% by mass, particularly 5% by mass to 20% by mass.
- metal ions examples include all metal ions that can be the central metal of metal phthalocyanine, and specifically include copper ions, zinc ions, cobalt ions, nickel ions, iron ions, and the like. . These metal ions are usually subjected to the reaction by dissolving a metal salt in a water-soluble polyhydric alcohol.
- the salt include halides and sulfates.
- copper (II) chloride and copper (II) sulfate can be mentioned as preferable salts.
- a glycol solvent may be added to a water-soluble polyhydric alcohol solution containing these compound and metal ion.
- the glycol-based solvent is particularly preferably a glycol ester-based solvent in consideration of the affinity with the metal phthalocyanine nanowire to be generated and the heatable temperature.
- Specific examples of the solvent include, but are not limited to, propylene glycol monomethyl ether acetate.
- a glycol-based solvent is preferred because it can promote unidirectional crystal growth for making the phthalocyanine of the present invention into a nanowire.
- the production method (I) is more preferable.
- Example 1 ⁇ Production of phthalocyanine nanowire ink composition>
- polyether monoamine 692 parts by mass of “Surfamine B-200” (trade name) (primary amine-terminated poly (ethylene oxide / propylene oxide) (5/95) copolymer, number average molecular weight of about 2,000) manufactured by Huntsman Corporation)
- the obtained reaction mixture was heated to 90 ° C. under vacuum to remove water to obtain a copper phthalocyanine sulfamoyl compound represented by the following [Chemical Formula 20].
- Q represents a hydrogen atom or a methyl group
- propylene oxide / ethylene oxide 29/6 (molar ratio)
- the average value of n 35.
- the obtained composite was filtered using a filter paper, washed sufficiently with distilled water, and the composite containing water was recovered.
- the weight of the water-containing composite was measured and found to be 12.4 g.
- Step (3) (dispersing step in an organic solvent) 10 g was taken from the finely divided composite aqueous dispersion obtained in step (2), 0.5 g of 5N hydrochloric acid (manufactured by Wako Pure Chemical Industries, Ltd.) was added, and the mixture was rotated at 2000 rpm for 1 hour. When centrifuged, the micronized complex was precipitated. The hydrochloric acid solution in the supernatant was removed, and 4.5 g of N-methylpyrrolidone (manufactured by Wako Pure Chemical Industries, Ltd.) was added to the hydrated micronized complex and shaken well. The dispersion was charged into a 100 mL eggplant flask, and 5.0 g of ethylene glycol monomethyl ether acetate (manufactured by Wako Pure Chemical Industries, Ltd.) was additionally charged and stirred for 1 hour.
- 5N hydrochloric acid manufactured by Wako Pure Chemical Industries, Ltd.
- the heated dispersion was filtered using a membrane filter (pore size: 0.1 ⁇ m), and the residue was thoroughly washed with N-methylpyrrolidone.
- the filter residue was put into N-methylpyrrolidone so that the solid concentration was 2%, and was shaken well to obtain a copper phthalocyanine nanowire ink composition (1) (N-methylpyrrolidone dispersion).
- the short diameter was about 6 nm, and the ratio of the length to the short diameter was increased to 80 or more. It was confirmed to have a wire shape (see FIGS. 5 and 6). Furthermore, by X-ray diffraction (using RINT-ULTIMA + manufactured by Rigaku Corporation), the obtained phthalocyanine nanowires showed a sharp diffraction peak peculiar to phthalocyanine compounds, and were confirmed to have high crystallinity. Moreover, the phthalocyanine nanowire ink composition (1) was extremely stable, and no precipitation of phthalocyanine nanowires was observed.
- n-type silicon substrate was prepared and used as a gate electrode, and the surface layer was thermally oxidized to form a gate insulating film made of silicon oxide.
- the said phthalocyanine nanowire ink composition (1) was spin-coated here, and the semiconductor film was formed.
- a source / drain electrode made of a gold thin film was patterned by vapor deposition to produce an organic transistor (1).
- the channel length L (source electrode-drain electrode interval) was 75 ⁇ m, and the channel width W was 5.0 mm.
- Example 2 ⁇ Production of phthalocyanine nanowire ink composition> A copper phthalocyanine nanowire ink composition (Example 1) was used except that 1.67 g of copper phthalocyanine and 0.83 g of a phthalocyanine derivative of the [Chemical Formula 5] formula were used instead of the [Chemical Formula 20] formula ( 2) was obtained.
- the phthalocyanine nanowire in the phthalocyanine nanowire ink composition obtained here was observed using a transmission electron microscope, the short diameter was about 10 nm, and the ratio of the length to the short diameter grew to 50 or more. It was confirmed to have a wire shape (see FIGS. 7 and 8).
- Example 3 A copper phthalocyanine nanowire was obtained in the same manner as in Example 1 except that 1.67 g of copper phthalocyanine and 0.83 g of a phthalocyanine derivative of the [Chemical 6] formula were used instead of the [Chemical 20] formula in Example 1.
- the phthalocyanine nanowire dispersion obtained here was observed using a transmission electron microscope, it had a nanowire shape in which the minor axis grew to about 25 nm and the ratio of the length to the minor axis was 10 or more. It was confirmed (see FIGS. 9 and 10). Furthermore, it was confirmed that the obtained phthalocyanine nanowire had high crystallinity unique to the phthalocyanine compound, the dispersion was extremely stable, and precipitation of the phthalocyanine nanowire was not observed.
- Example 4 A copper phthalocyanine nanowire was obtained in the same manner as in Example 1 except that 1.67 g of copper phthalocyanine and 0.83 g of a phthalocyanine derivative of the [Chemical 7] formula were used instead of the [Chemical 20] formula in Example 1.
- the phthalocyanine nanowire dispersion obtained here was observed using a transmission electron microscope, it had a nanowire shape in which the minor axis was about 30 nm and the ratio of the length to the minor axis was 10 or more. It was confirmed (see FIG. 11). Furthermore, it was confirmed that the obtained phthalocyanine nanowire had high crystallinity unique to the phthalocyanine compound, the dispersion was extremely stable, and precipitation of the phthalocyanine nanowire was not observed.
- Example 5 ⁇ Production of phthalocyanine nanowire ink composition> A copper phthalocyanine nanowire ink composition (Example 1) except that 1.67 g of copper phthalocyanine and 0.83 g of a phthalocyanine derivative of the [Chemical 9] formula are used instead of the [Chemical 20] formula ( 5) was obtained.
- the phthalocyanine nanowires in the phthalocyanine nanowire dispersion obtained here were observed using a transmission electron microscope, the nanowires grew to a short diameter of about 25 nm and a length ratio to the short diameter of 20 or more. It was confirmed to have a shape (see FIGS. 12 and 13).
- Example 6 A zinc phthalocyanine nanowire was obtained in the same manner as in Example 1 except that 1.67 g of zinc phthalocyanine and 0.83 g of a phthalocyanine derivative of the [Chemical Formula 4] formula were used instead of the [Chemical Formula 20] formula.
- the phthalocyanine nanowire dispersion obtained here was observed using a transmission electron microscope, it had a nanowire shape in which the minor axis grew to about 25 nm and the ratio of the length to the minor axis was 20 or more. It was confirmed (see FIG. 14). Furthermore, it was confirmed that the obtained phthalocyanine nanowire had high crystallinity unique to the phthalocyanine compound, the dispersion was extremely stable, and precipitation of the phthalocyanine nanowire was not observed.
- Example 7 In Example 1, except that 1.67 g of metal-free phthalocyanine and 0.83 g of a phthalocyanine derivative of [Chemical formula 5] instead of [Chemical formula 20] are used, copper phthalocyanine and metal-free phthalocyanine are used in the same manner as in Example 1. A composite nanowire was obtained. When the phthalocyanine nanowire dispersion obtained here was observed using a transmission electron microscope, it had a nanowire shape in which the minor axis was grown to about 20 nm and the ratio of the length to the minor axis was 20 or more. It was confirmed (see FIG. 15). Furthermore, it was confirmed that the obtained phthalocyanine nanowire had high crystallinity unique to the phthalocyanine compound, the dispersion was extremely stable, and precipitation of the phthalocyanine nanowire was not observed.
- Example 8 A water-containing composite was obtained through the crystallization step of Example 1 except that 1.6 g of copper phthalocyanine in Example 1 and 1.2 g of a phthalocyanine derivative of the [Chemical 9] formula were used instead of the [Chemical 7] formula. . This was vacuum-dried at 50 ° C. for 48 hours using a vacuum dryer to remove moisture, and 2.61 g of a composite was obtained. The composite was put together with 23.49 g of orthodichlorobenzene into a polypropylene container having a capacity of 50 mL, and then 60 g of zirconia beads having a diameter of 0.5 mm were added and finely dispersed for 2 hours using a paint shaker.
- the finely divided complex was separated and recovered from the zirconia beads, and further orthodichlorobenzene was added to obtain a finely divided complex dispersion having a solid concentration of 2%.
- 1 g of the dispersion was collected, 1 g of orthodichlorobenzene was further added, and the dispersion was added to a stainless steel pressure cell having a capacity of 2 mL as a dispersion having a solid concentration of 1%, and this was heated to 200 ° C. in an oven.
- by raising the temperature from 30 ° C. to 100 ° C. at 2 ° C./min from 100 ° C. to 200 ° C. by raising the temperature at 1 ° C./min and holding 200 ° C. for 30 minutes after reaching 200 ° C.
- a phthalocyanine nanowire was obtained.
- the phthalocyanine nanowire was recovered from the pressure cell by cooling and observed using a transmission electron microscope.
- the nanowire shape was grown to a short diameter of about 10 nm and a length ratio to the short diameter of 50 or more. (See FIGS. 16 and 17). Furthermore, it was confirmed that the obtained phthalocyanine nanowire had high crystallinity unique to the phthalocyanine compound, the dispersion was extremely stable, and precipitation of the phthalocyanine nanowire was not observed.
- the obtained two kinds of phthalonitrile solution and copper chloride solution were put into a 100 mL round bottom flask and mixed, and stirred at a temperature of 40 ° C. or lower for 10 minutes to obtain a uniform mixed solution.
- the flask was immersed in an oil bath heated to 150 ° C. in advance, and the reaction was continued for 15 minutes while stirring.
- reaction mixture was cooled to 80 ° C. or lower, poured with 50 g of 1N hydrochloric acid aqueous solution, stirred for 30 minutes, and then the contents of the flask were filtered through a 0.1 ⁇ m membrane filter to obtain sodium hydroxide having a concentration of 5%.
- the filter residue was washed with an aqueous solution and then with methanol, and the residue was dried at 80 ° C. for 2 hours to obtain a blue solid as a phthalocyanine derivative (recovered amount: 1.8 g).
- Example 1 ⁇ Production of phthalocyanine nanowire ink composition> Example 1 except that 1.67 g of copper phthalocyanine in Example 1 and 0.83 g of a phthalocyanine derivative having a 4- (2 ′, 6′-dimethylphenoxy group) synthesized earlier instead of the formula [Chemical Formula 20] are used. Copper phthalocyanine nanowires were obtained in the same manner as described above, and the obtained phthalocyanine nanowire dispersion liquid was observed using a transmission electron microscope, where the minor axis was about 25 nm and the ratio of the length to the minor axis was 20. It was confirmed that the nanowire was grown as described above, and it was confirmed that it had high crystallinity unique to the phthalocyanine compound.The dispersion was extremely stable, and precipitation of the phthalocyanine nanowire was not observed.
- Example 10 ⁇ Production of phthalocyanine nanowire ink composition> Polymethylmethacrylate (PMMA) (manufactured by Aldrich: molecular weight 120,000) was added to the phthalocyanine nanowire ink composition (1) of Example 1 so as to be 2% by mass with respect to the total ink composition, and the phthalocyanine nanowire ink composition A product (10) was produced.
- PMMA Polymethylmethacrylate
- An organic transistor (10) was produced in the same manner as in Example 1 except that the phthalocyanine nanowire ink composition (1) used for the production of the semiconductor film was changed to the phthalocyanine nanowire ink composition (10).
- Example 11 ⁇ Production of phthalocyanine nanowire ink composition> Polystyrene (manufactured by Aldrich: molecular weight 13000) was added to the phthalocyanine nanowire ink composition (1) of Example 1 so as to be 0.2% by mass with respect to the total ink composition, and the phthalocyanine nanowire ink composition (11 ) was manufactured.
- An organic transistor (11) was produced in the same manner as in Example 1 except that the phthalocyanine nanowire ink composition (1) used for the semiconductor film production was changed to the phthalocyanine nanowire ink composition (11).
- Example 12 ⁇ Production of phthalocyanine nanowire ink composition> Polystyrene (manufactured by Aldrich: molecular weight 13000) was added to the phthalocyanine nanowire ink composition (1) of Example 1 so as to be 0.6% by mass with respect to the total ink composition, and the phthalocyanine nanowire ink composition (12 ) was manufactured.
- An organic transistor (12) was produced in the same manner as in Example 1, except that the phthalocyanine nanowire ink composition (1) used for producing the semiconductor film was changed to the phthalocyanine nanowire ink composition (12).
- Example 13 ⁇ Production of phthalocyanine nanowire ink composition>
- step (3) of Example 1 the procedure was carried out except that only 9.5 g of N-methylpyrrolidone was added to the water-containing micronized complex after centrifugation and stirred for 1 hour.
- a copper phthalocyanine nanowire ink composition (13) having a solid content of 2% using N-methylpyrrolidone as a dispersion was obtained.
- An organic transistor (13) was produced in the same manner as in Example 1 except that the phthalocyanine nanowire ink composition (1) used for producing the semiconductor film was changed to the phthalocyanine nanowire ink composition (13).
- Example 14 ⁇ Production of phthalocyanine nanowire ink composition>
- N-methylpyrrolidone was dispersed in the same manner as in Example 1 except that 1.2 g of the copper phthalocyanine sulfamoyl compound represented by [Chemical Formula 9] was used.
- a copper phthalocyanine nanowire ink composition (14) having a solid content of 2% was obtained as a liquid.
- An organic transistor (14) was produced in the same manner as in Example 1, except that the phthalocyanine nanowire ink composition (1) used for the production of the semiconductor film was changed to the phthalocyanine nanowire ink composition (14).
- Example 15 ⁇ Production of phthalocyanine nanowire ink composition> N-methylpyrrolidone was prepared in the same manner as in Example 1 except that 1.0 g of the copper phthalocyanine sulfamoyl compound represented by [Chemical Formula 20] was used in Step (1) (crystallization step) of Example 1. A copper phthalocyanine nanowire ink composition (15) having a solid content of 2% was obtained as a dispersion.
- An organic transistor (15) was produced in the same manner as in Example 1 except that the phthalocyanine nanowire ink composition (1) used for the production of the semiconductor film was changed to the phthalocyanine nanowire ink composition (15).
- Example 16 ⁇ Production of phthalocyanine nanowire ink composition> Poly (2-methoxy-5- (2′-ethylhexyloxy) -1,4 was added to the phthalocyanine nanowire ink composition (5) of Example 5 so as to be 0.6 mass% with respect to the total ink composition. -Phenylene vinylene (manufactured by Aldrich: molecular weight: 150,000 to 200,000) was added to produce a phthalocyanine nanowire ink composition (16).
- An organic transistor (16) was produced in the same manner as in Example 1 except that the phthalocyanine nanowire ink composition (1) used for producing the semiconductor film was changed to the phthalocyanine nanowire ink composition (16).
- Example 17 ⁇ Production of phthalocyanine nanowire ink composition>
- Regioregular poly (3-hexylthiophene-2,5-diyl) (manufactured by Merck) was added to the phthalocyanine nanowire ink composition (5) of Example 5 at 0.6% by mass based on the total ink composition.
- Rishicone SP001 was added to produce a phthalocyanine nanowire ink composition (17).
- An organic transistor (17) was produced in the same manner as in Example 1 except that the phthalocyanine nanowire ink composition (1) used for the production of the semiconductor film was changed to the phthalocyanine nanowire ink composition (17).
- Example 1 a treatment and dispersion liquid were obtained in the same manner as in Example 1 using only copper phthalocyanine without using a phthalocyanine derivative.
- the dispersion obtained here was observed using a transmission electron microscope, a needle-like crystal coarsened to a length of several tens of ⁇ m and a plate having a width of about 100 nm and a ratio of length to width of less than 5
- nanowires were not obtained, and the dispersion was unstable and settled in a few minutes after shaking (see FIGS. 18 and 19).
- An organic transistor (2) ′ was produced in the same manner as in Example 1 except that the phthalocyanine nanowire ink composition (1) used for the production of the semiconductor film was changed to the copper phthalocyanine-dispersed ink composition (2) ′.
- Example 3 ⁇ Production of phthalocyanine rod-dispersed ink composition>
- the solid content was 2% in the same manner as in Example 1 except that only 2.0 g of copper phthalocyanine (DIC Corporation, Fastogen Blue 5380E) was used.
- N-methylpyrrolidone dispersion was prepared.
- the phthalocyanine rod-dispersed ink composition (3) ′ obtained here was observed using a transmission electron microscope, it was a plate having a width of 100 nm or more and a ratio of the length to the width of less than 20. Copper phthalocyanine was confirmed (see FIG. 15). The stability of the N-methylpyrrolidone dispersion was low and the copper phthalocyanine settled in a few minutes after shaking.
- An organic transistor (3) ′ was produced in the same manner as in Example 1 except that the phthalocyanine nanowire ink composition (1) used for the semiconductor film production was changed to the phthalocyanine rod-dispersed ink composition (3) ′.
- ⁇ FET evaluation> The transistor characteristics of each of the organic transistors (2), (5), (10) to (17) were measured (see FIGS. 2 and 20).
- the transistor characteristic is measured by using a digital multimeter (237, manufactured by Keithley), sweeping a voltage of 0 to -80V (Vg) to the gate electrode, and applying the current (Id) between the source and drain electrodes to which -80V is applied. This was done by measuring.
- the mobility was determined by a known method from the slope of ⁇ Id ⁇ Vg.
- the unit is cm 2 / V ⁇ s.
- the ON / OFF ratio (hereinafter referred to as ON / OFF) was obtained by (maximum value of absolute value of Id) / (minimum value of absolute value of Id).
- the organic transistors of the examples shown in Table 1 exhibit transistor characteristics of mobility: 10 ⁇ 5 to 10 ⁇ 3 and ON / OFF: 10 3 to 10 5 .
- Id was not modulated by the gate voltage, and did not exhibit transistor characteristics.
- phthalocyanine nanowires by using phthalocyanine nanowires, it is possible to produce a semiconductor film-forming ink having excellent dispersibility, and by applying this to an OFET by a wet process, it is an electronic element that is hard to break and is light and inexpensive. Can be provided.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
また、このフタロシアニンナノワイヤーを含有するインキ組成物を用いて、塗布や印刷法等のウェットプロセスで膜化し、低コストの電子素子を提供することを目的とするものである。
また、本発明は、上記フタロシアニンナノワイヤーを含有することを特徴とする膜を提供するものである。
また、本発明は、前記膜を有することを特徴とする電子素子を提供するものである。
更に、本発明は、上記インキ組成物、膜及び電子素子に用いられるフタロシアニンナノワイヤーの製造方法を提供するものである。
1.フタロシアニン及びフタロシアニン誘導体を含有するフタロシアニンナノワイヤーであって、短径が100nm以下であり、その短径に対する長さの比率(長さ/短径)が10以上であることを特徴とするフタロシアニンナノワイヤー、
2.1.に記載のフタロシアニンナノワイヤーと有機溶剤とを必須成分とするインキ組成物、
3.1.に記載のフタロシアニンナノワイヤーを含有することを特徴とする膜、
4.3.に記載の膜を有することを特徴とする電子素子、
5.1.に記載のフタロシアニンナノワイヤーの製造方法において、
(1)フタロシアニンとフタロシアニン誘導体とを酸に溶解させた後に、貧溶媒に析出させて複合体を得る工程(a)と、
(2)前記複合体を微粒子化して、微粒子化複合体を得る工程(b)と、
(3)前記微粒子化複合体を有機溶媒に分散させて分散体を得る工程(c)と、
(4)前記分散体を加熱してナノワイヤー化する工程(d)と
を有することを特徴とするフタロシアニンナノワイヤーの製造方法を提供するものである。
本発明のフタロシアニンは、中心金属原子を有する公知慣用のフタロシアニンを用いることができる。中心金属原子としては、ナノワイヤーを構成するものであれば制限はないが、銅原子、亜鉛原子、コバルト原子、ニッケル原子、スズ原子、鉛原子、マグネシウム原子、ケイ素原子、鉄原子、チタニル(TiO)、バナジル(VO)、塩化アルミニウム(AlCl)等を挙げることができ、中でも銅原子、亜鉛原子、鉄原子が特に好ましい。
本発明のフタロシアニンナノワイヤーは、前記フタロシアニンと、下記一般式(1)又は(2)であるフタロシアニン誘導体を含有するフタロシアニンナノワイヤーである。
Y1からY4が結合基として存在しない場合には、R1~R4は、SO3H、CO2H、置換基を有してもよいアルキル基、置換基を有してもよい(オリゴ)アリール基、置換基を有してもよい(オリゴ)へテロアリール基、置換基を有してもよいフタルイミド基又は置換基を有してもよいフラーレン類であり、
Y1からY4が、-(CH2)n-(nは1~10の整数を表す)、-CH=CH-、-C≡C-、-O-、-NH-、-S-、-S(O)-、又は-S(O)2-で表される結合基である場合には、R1~R4は、置換基を有してもよいアルキル基、置換基を有してもよい(オリゴ)アリール基、置換基を有してもよい(オリゴ)へテロアリール基、置換基を有してもよいフタルイミド基又は置換基を有してもよいフラーレン類であり、a、b、c及びdは各々独立に0~2の整数を表すが、そのうち少なくとも一つは1である。)
で表される基も用いることができる。
で表される基を挙げることができる。置換基としては、フタルイミド基に置換が可能な通常公知の置換基を挙げることができる。
で表されるフタロシアニン誘導体では、フタロシアニン環が少なくとも1個以上のスルファモイル基で置換された化合物を挙げることができる。導入されるスルファモイル基は、フタロシアニン環1個あたり少なくとも1個であれば特に限定なく用いることができるが、好ましくは1又は2個、より好ましくは1個である。置換される位置は、特に限定はない。
ポリエーテルモノアミンは市販品としても提供されており、例えばアメリカHuntsman Corporationから「JEFFAMINE(商品名)Mシリーズ」がある。
本誘導体は、上記の一般式(a)で表される基の導入に用いたポリエーテルアミンの替わりに
下記式で表されるアミンと反応させればよい。
好ましいR及びR’として、低級アルキル基、特にメチル基を挙げることができ、mとしては、1~6の整数であるものが好ましい。具体的に好ましいフタロシアニン誘導体として以下が挙げられる。
本発明の短径が100nm以下であってその短径に対する長さの比率(長さ/短径)が10以上であるフタロシアニンナノワイヤーを有機溶剤に分散させることにより、インキ組成物を得ることができる。
また、ハロゲン系有機溶剤として、クロロホルム、塩化メチレン、又はジクロロエタン等の有機溶剤を挙げることができる。
さらに、本発明のインキ組成物は、体質成分、インキ表面張力調整やレベリング性向上を主な目的として各種界面活性剤等を必要に応じて添加して使用することができる。
このようにして得られたインキ組成物を印刷もしくは塗工(ウェットプロセス)によって製膜し、これを乾燥させることにより、短径が100nm以下であってその短径に対する長さの比率(長さ/短径)が10以上であるフタロシアニンナノワイヤーを含有する膜を得ることができる。
短径が100nm以下であってその短径に対する長さの比率(長さ/短径)が10以上であるフタロシアニンナノワイヤーから成る膜又はフタロシアニンナノワイヤーを含有する膜(フタロシアニンナノワイヤー膜)を有する有機トランジスタ(OFET)としては、基板上に本発明によるインキ組成物から形成された膜とこれに連結するソース電極とドレイン電極を形成し、その上にゲート絶縁膜を介してゲート電極を形成したトップゲート型を挙げることができる。
次に、本発明のフタロシアニンナノワイヤーの製造方法(I)~(II)について説明する。
本製造方法は、
(1)フタロシアニンとフタロシアニン誘導体とを酸に溶解させた後に、貧溶媒に析出させて複合体を得る工程(a)と、
(2)前記複合体を微粒子化して、微粒子化複合体を得る工程(b)と、
(3)前記微粒子化複合体を有機溶媒に分散させて分散体を得る工程(c)と、
(4)前記分散体を加熱してナノワイヤー化する工程(d)と
を有するものである。
一般にフタロシアニン類は硫酸などの酸溶媒に可溶であることが知られており、本発明のフタロシアニンナノワイヤーの製造方法においても、まず前記フタロシアニンと前記フタロシアニン誘導体とを硫酸、クロロ硫酸、メタンスルホン酸、トリフルオロ酢酸等の酸溶媒に溶解させる。その後に水などの貧溶媒に投入して該フタロシアニンとフタロシアニン誘導体の複合体を析出させる。
前記工程(a)を経て得られた複合体を微粒子化することができれば、その方法は特に限定されるものではないが、湿式分散法で前記複合体を微粒子化することが好ましい。例えば、工程(a)で得られた複合体をビーズミル、ペイントコンディショナーなどを用いて水などの分散溶媒とともに湿式分散して、該複合体を微粒子化する。ここで該複合体の分散溶媒に対する質量比に関しては特に制限はないが、分散効率の観点から、固形分濃度を1質量%から30質量%の範囲で分散処理することが好ましい。分散処理にはジルコニアビーズなどの微小メディアの使用が好ましく、該複合体の微粒子化の程度を鑑みて、そのビーズ径は0.01mmから2mmの範囲にあると考えてよい。また微小メディアは微粒子化の効率と回収効率の観点から、該複合体の分散液に対して、100質量%から1000質量%の範囲が最も好適に微粒子化できる。
工程(b)を経て得られた微粒子化複合体をN-メチルピロリドンなどのナノワイヤー化に供される有機溶媒に分散させる。該有機溶媒に関してはフタロシアニン類との親和性が低いものでなければ特に制限はないが、例えば、フタロシアニン類との親和性が高いアミド系溶媒及び芳香族有機溶媒が好ましく、具体的には、フタロシアニンと特に親和性が高いN,N-ジメチルアセトアミド、N,N-ジメチルホルムアミド、N-メチルピロリドンやトルエン、キシレン、エチルベンゼン、クロロベンゼン、ジクロロベンゼンを最も好適な有機溶媒として挙げることができる。上記アミド系有機溶媒及び芳香族有機溶媒は単独で用いることもできるが、該アミド系有機溶媒と該芳香族有機溶媒とを任意の比率で混合して使用することもでき、さらには他の有機溶媒と併用して用いることもできる。
工程(c)を経て得られた微粒子化複合体の有機溶媒分散液を加熱することにより、フタロシアニンのナノワイヤーが製造できる。ここで加熱温度は、50℃から250℃の範囲が好ましく、さらに好ましくは100℃から200℃である。加熱温度が50℃以上であれば、十分にフタロシアニン類の結晶成長を誘発することができ、目的とする一方向結晶成長により、ナノワイヤーへ成長可能であり、また250℃以下であればナノワイヤーの凝集、融着がほとんど見られず、幅方向に結晶成長して粗大化することもない。また加熱時間には特に限定は無いが、フタロシアニンナノワイヤーの長さが100nm以上に成長するまでに、少なくとも10分以上加熱することが好ましい。
本製造方法は、水溶性多価アルコール中において、フタロシアニン誘導体の存在下、イソインドリン化合物と金属イオンとを反応させることを特徴とするものである。
撹拌時の温度が80℃よりも高い場合は混合が不十分な段階で一部に不均一な形状のフタロシアニン化合物が生成したり、収率が低下したりする場合もあるため、80℃以下で行うことが好ましい。
(但し、式中、Qは水素原子又はメチル基を表し、プロピレンオキシド/エチレンオキ
シド=30/70(モル比)、nの平均値=47である。)
が挙げられる。環Aがベンゼン環である場合に、その他の部位にハロゲン原子やアルキル基などの官能基が導入されているものでもよい。
ポリエーテルモノアミンとして、Huntsman Corporation製「Surfonamine B-200」(商品名)(第一アミン-末端ポリ(エチレンオキシド/プロピレンオキシド)(5/95)コポリマー、数平均分子量約2,000)692質量部と炭酸ナトリウム66質量部と水150質量部の混合物に、銅フタロシアニンスルホニルクロリド(スルホン化度=1)210質量部を投入し、5℃~室温で6時間反応させた。得られた反応混合物を真空下で90℃に加熱して水を除去し、下記[化20]で表される銅フタロシアニンスルファモイル化合物を得た。
銅フタロシアニン(DIC(株)製、Fastogen Blue 5380E)1.0gとフタロシアニン誘導体のうち、[化20]で表される銅フタロシアニンスルファモイル化合物1.5gを濃硫酸(関東化学(株)製)81gに投入して完全に溶解させ、濃硫酸溶液を調製した。続いて蒸留水730gを1000mLのビーカーに投入し、これを氷水で十分、冷却した後、該蒸留水を撹拌しながら、先に調製した濃硫酸溶液を投入し、銅フタロシアニンと[化20]で表される銅フタロシアニンスルファモイル化合物をとからなる複合体を析出させた。
工程(1)で得られた銅フタロシアニンと[化20]で表される銅フタロシアニンスルファモイル化合物からなる複合体2.5gを含む含水複合体12.4gを容量50mLのポリプロピレン製容器に投入し、さらに蒸留水を4.3g加えて、該複合体の水に対する重量比を15%とし、次いでφ0.5mmのジルコニアビーズ60gを加えて、ペイントシェイカーを用いて2時間、微分散した。続いて微粒子化した複合体をジルコニアビーズから分離回収し、さらに蒸留水を加えて重量50gの微粒子化複合体水分散液(固形物濃度5%)を得た。
工程(2)で得られた微粒子化複合体水分散液から10g分取し、さらに濃度5Nの塩酸水(和光純薬工業(株)社製)0.5gを加えて、2000回転で1時間、遠心分離したところ、該微粒子化複合体が沈殿した。上澄みの塩酸水を除去し、含水した該微粒子化複合体に4.5gのN-メチルピロリドン(和光純薬工業(株)社製)を加えて、よく振とうした。該分散液を100mLナスフラスコに投入し、さらにエチレングリコールモノメチルエーテルアセテート(和光純薬工業(株)社製)を5.0g追加投入して、1時間撹拌した。
該微粒子化複合体を分散したN-メチルピロリドンとエチレングリコールモノメチルエーテルアセテートを含む該ナスフラスコを、オイルバスを用いて加熱し、90分かけて145℃まで昇温した。145℃に到達後、そのままの温度でさらに30分間加熱を継続した。
n型のシリコン基板を用意してこれをゲート電極とし、この表面層を熱酸化処理して酸化シリコンからなるゲート絶縁膜を形成した。ここに、上記フタロシアニンナノワイヤーインキ組成物(1)をスピンコートし、半導体膜を形成した。次に、蒸着成膜によって、金薄膜からなるソース・ドレイン電極をパターン形成し、有機トランジスタ(1)を製造した。なお、チャネル長L(ソース電極-ドレイン電極間隔)を75μm、チャネル幅Wを5.0mmとした。
実施例1において銅フタロシアニンを1.67g、[化20]式に代えて[化5]式のフタロ
シアニン誘導体を0.83g用いる以外は、実施例1と同様にして銅フタロシアニンナノワイヤーインキ組成物(2)を得た。ここで得られたフタロシアニンナノワイヤーインキ組成物中のフタロシアニンナノワイヤーを、透過型電子顕微鏡を用いて観察したところ、短径が約10nm、短径に対する長さの比率が50以上にまで成長したナノワイヤー形状を有することが確認された(図7、図8参照)。さらに得られたフタロシアニンナノワイヤーはフタロシアニン化合物特有の高い結晶性を有することが確認でき、その分散液は極めて安定で、フタロシアニンナノワイヤーの沈降は見られなかった。
<有機トランジスタの製造>
半導体膜製造に用いたフタロシアニンナノワイヤーインキ組成物(1)を上記フタロシアニンナノワイヤーインキ組成物(2)にした以外は、実施例1と同様にして、有機トランジスタ(2)を製造した。
実施例1において銅フタロシアニンを1.67g、[化20]式に代えて[化6]式のフタロシアニン誘導体を0.83g用いる以外は、実施例1と同様にして銅フタロシアニンナノワイヤーを得た。ここで得られたフタロシアニンナノワイヤー分散液を、透過型電子顕微鏡を用いて観察したところ、短径が約25nm、短径に対する長さの比率が10以上にまで成長したナノワイヤー形状を有することが確認された(図9、図10参照)。さらに得られたフタロシアニンナノワイヤーはフタロシアニン化合物特有の高い結晶性を有することが確認でき、その分散液は極めて安定で、フタロシアニンナノワイヤーの沈降は見られなかった。
実施例1において銅フタロシアニンを1.67g、[化20]式に代えて[化7]式のフタロシアニン誘導体を0.83g用いる以外は、実施例1と同様にして銅フタロシアニンナノワイヤーを得た。ここで得られたフタロシアニンナノワイヤー分散液を、透過型電子顕微鏡を用いて観察したところ、短径が約30nm、短径に対する長さの比率が10以上にまで成長したナノワイヤー形状を有することが確認された(図11参照)。さらに得られたフタロシアニンナノワイヤーはフタロシアニン化合物特有の高い結晶性を有することが確認でき、その分散液は極めて安定で、フタロシアニンナノワイヤーの沈降は見られなかった。
実施例1において銅フタロシアニンを1.67g、[化20]式に代えて[化9]式のフタロシアニン誘導体を0.83g用いる以外は、実施例1と同様にして銅フタロシアニンナノワイヤーインキ組成物(5)を得た。ここで得られたフタロシアニンナノワイヤー分散液中のフタロシアニンナノワイヤーを、透過型電子顕微鏡を用いて観察したところ、短径が約25nm、短径に対する長さの比率が20以上にまで成長したナノワイヤー形状を有することが確認された(図12、13参照)。さらに得られたフタロシアニンナノワイヤーはフタロシアニン化合物特有の高い結晶性を有することが確認でき、その分散液は極めて安定で、フタロシアニンナノワイヤーの沈降は見られなかった。
<有機トランジスタの製造>
半導体膜製造に用いたフタロシアニンナノワイヤーインキ組成物(1)を上記フタロシアニンナノワイヤーインキ組成物(5)にした以外は、実施例1と同様にして、有機トランジスタ(5)を製造した。
実施例1において亜鉛フタロシアニンを1.67g、[化20]式に代えて[化4]式のフタロシアニン誘導体を0.83g用いる以外は、実施例1と同様にして亜鉛フタロシアニンナノワイヤーを得た。ここで得られたフタロシアニンナノワイヤー分散液を、透過型電子顕微鏡を用いて観察したところ、短径が約25nm、短径に対する長さの比率が20以上にまで成長したナノワイヤー形状を有することが確認された(図14参照)。さらに得られたフタロシアニンナノワイヤーはフタロシアニン化合物特有の高い結晶性を有することが確認でき、その分散液は極めて安定で、フタロシアニンナノワイヤーの沈降は見られなかった。
実施例1において無金属フタロシアニンを1.67g、[化20]式に代えて[化5]式のフタロシアニン誘導体を0.83g用いる以外は、実施例1と同様にして銅フタロシアニンと無金属フタロシアニンの複合ナノワイヤーを得た。ここで得られたフタロシアニンナノワイヤー分散液を、透過型電子顕微鏡を用いて観察したところ、短径が約20nm、短径に対する長さの比率が20以上にまで成長したナノワイヤー形状を有することが確認された(図15参照)。さらに得られたフタロシアニンナノワイヤーはフタロシアニン化合物特有の高い結晶性を有することが確認でき、その分散液は極めて安定で、フタロシアニンナノワイヤーの沈降は見られなかった。
実施例1において銅フタロシアニンを1.6g、[化7]式に代えて[化9]式のフタロシアニン誘導体を1.2g用いる以外は、実施例1の晶析工程を経て含水複合体を得た。これを、真空乾燥機を用いて50℃で48時間、真空乾燥して水分を除去し、2.61gの複合体を得た。該複合体を23.49gのオルトジクロロベンゼンとともに、容量50mLのポリプロピレン製容器に投入し、次いでφ0.5mmのジルコニアビーズ60gを加えて、ペイントシェイカーを用いて2時間、微分散した。続いて微粒子化した複合体をジルコニアビーズから分離回収し、さらにオルトジクロロベンゼンを加えて、固形物濃度2%の微粒子化複合体分散液を得た。該分散液から1gを分収し、さらにオルトジクロロベンゼン1gを加え、固形分濃度1%の分散液として容量2mLのステンレス製耐圧セルに投入し、これをオーブンで200℃まで加熱した。このとき、30℃から100℃までは毎分2℃で昇温し、100℃から200℃までは毎分1℃で昇温して、200℃到達後、30分間200℃を保持することにより、フタロシアニンナノワイヤーを得た。
得られたフタロシアニンナノワイヤーからなる膜を、レーザー顕微鏡を用いて観察したところ、平坦で均一な膜が得られており、その膜厚は150nmであった。
オルトフタロニトリル(和光純薬工業(株)製)2.0gとエチレングリコール(和光純薬工業(株)製)38.0gとを容量50mLの丸底フラスコに投入し、次いで攪拌しながら1,8-ジアザビシクロ[5,4,0]ウンデック-7-エンを5滴加えて、40℃に調節したオイルバスで90分間かけてオルトフタロニトリルを加熱溶解させた。なお、この溶液は黄色で未溶解のオルトフタロニトリルは見られなかった。
実施例1において銅フタロシアニンを1.67g、[化20]式に代えて先に合成した4-(2',6'-ジメチルフェノキシ基を有するフタロシアニン誘導体を0.83g用いる以外は、実施例1と同様にして銅フタロシアニンナノワイヤーを得た。ここで得られたフタロシアニンナノワイヤー分散液を、透過型電子顕微鏡を用いて観察したところ、短径が約25nm、短径に対する長さの比率が20以上にまで成長したナノワイヤー形状を有することが確認され、フタロシアニン化合物特有の高い結晶性を有することが確認できた。その分散液は極めて安定で、フタロシアニンナノワイヤーの沈降は見られなかった。
実施例1のフタロシアニンナノワイヤーインキ組成物(1)に、全インキ組成物に対して2質量%になるようにポリメチルメタクリレート(PMMA)(アルドリッチ製:分子量120000)を加え、フタロシアニンナノワイヤーインキ組成物(10)を製造した。
半導体膜製造に用いたフタロシアニンナノワイヤーインキ組成物(1)を上記フタロシアニンナノワイヤーインキ組成物(10)にした以外は、実施例1と同様にして、有機トランジスタ(10)を製造した。
実施例1のフタロシアニンナノワイヤーインキ組成物(1)に、全インキ組成物に対して0.2質量%になるようにポリスチレン(アルドリッチ製:分子量13000)を加え、フタロシアニンナノワイヤーインキ組成物(11)を製造した。
半導体膜製造に用いたフタロシアニンナノワイヤーインキ組成物(1)を上記フタロシアニンナノワイヤーインキ組成物(11)にした以外は、実施例1と同様にして、有機トランジスタ(11)を製造した。
実施例1のフタロシアニンナノワイヤーインキ組成物(1)に、全インキ組成物に対して0.6質量%になるようにポリスチレン(アルドリッチ製:分子量13000)を加え、フタロシアニンナノワイヤーインキ組成物(12)を製造した。
半導体膜製造に用いたフタロシアニンナノワイヤーインキ組成物(1)を上記フタロシアニンナノワイヤーインキ組成物(12)にした以外は、実施例1と同様にして、有機トランジスタ(12)を製造した。
実施例1の工程(3)(有機溶媒への分散工程)において、遠心分離後の含水した該微粒子化複合体に9.5gのN-メチルピロリドンのみを加えて1時間撹拌する以外は、実施例1と同様にして、N-メチルピロリドンを分散液とする、固形分が2%の銅フタロシアニンナノワイヤーインキ組成物(13)を得た。
半導体膜製造に用いたフタロシアニンナノワイヤーインキ組成物(1)を上記フタロシアニンナノワイヤーインキ組成物(13)にした以外は、実施例1と同様にして、有機トランジスタ(13)を製造した。
実施例1の工程(1)(晶析工程)において、[化9]で表される銅フタロシアニンスルファモイル化合物1.2gを用いる以外は、実施例1と同様にしてN-メチルピロリドンを分散液とする、固形分が2%の銅フタロシアニンナノワイヤーインキ組成物(14)を得た。
半導体膜製造に用いたフタロシアニンナノワイヤーインキ組成物(1)を上記フタロシアニンナノワイヤーインキ組成物(14)にした以外は、実施例1と同様にして、有機トランジスタ(14)を製造した。
実施例1の工程(1)(晶析工程)において、[化20]で表される銅フタロシアニンスルファモイル化合物1.0gを用いる以外は、実施例1と同様にして、N-メチルピロリドンを分散液とする、固形分が2%の銅フタロシアニンナノワイヤーインキ組成物(15)を得た。
半導体膜製造に用いたフタロシアニンナノワイヤーインキ組成物(1)を上記フタロシアニンナノワイヤーインキ組成物(15)にした以外は、実施例1と同様にして、有機トランジスタ(15)を製造した。
<フタロシアニンナノワイヤーインキ組成物の製造>
実施例5のフタロシアニンナノワイヤーインキ組成物(5)に、全インキ組成物に対して0.6質量%になるようにポリ(2-メトキシ-5-(2'-エチルヘキシルオキシ)-1,4-フェニレンビニレン(アルドリッチ製:分子量150000~200000)を加え、フタロシアニンナノワイヤーインキ組成物(16)を製造した。
半導体膜製造に用いたフタロシアニンナノワイヤーインキ組成物(1)を上記フタロシアニンナノワイヤーインキ組成物(16)にした以外は、実施例1と同様にして、有機トランジスタ(16)を製造した。
実施例5のフタロシアニンナノワイヤーインキ組成物(5)に、全インキ組成物に対して0.6質量%になるようにレジオレギュラーポリ(3-ヘキシルチオフェン-2,5-ジイル)(メルク製:リシコンSP001)を加え、フタロシアニンナノワイヤーインキ組成物(17)を製造した。
半導体膜製造に用いたフタロシアニンナノワイヤーインキ組成物(1)を上記フタロシアニンナノワイヤーインキ組成物(17)にした以外は、実施例1と同様にして、有機トランジスタ(17)を製造した。
実施例1において、フタロシアニン誘導体を用いずに銅フタロシアニンのみで実施例1と同様にして処理、分散液を得た。ここで得られた分散液を、透過型電子顕微鏡を用いて観察したところ、長さが数十μmにまで粗大化した針状結晶と幅100nm程度で長さと幅の比率が5に満たない板状粒子の混合物で、ナノワイヤーは得られず、その分散液は不安定で、振とう後、数分で沈降した(図18、19参照)。
銅フタロシアニンを1.2g、[化20]で表される銅フタロシアニンスルファモイル化合物を0.6g、PMMAを0.2g、N-メチルピロリドンを98gとして混合し、銅フタロシアニン分散インキ組成物(2)’を製造した。
半導体膜製造に用いたフタロシアニンナノワイヤーインキ組成物(1)を上記銅フタロシアニン分散インキ組成物(2)’にした以外は、実施例1と同様にして、有機トランジスタ(2)’を製造した。
実施例1の工程(1)(晶析工程)において、銅フタロシアニン(DIC(株)製、Fastogen Blue 5380E)2.0gのみを用いる以外は、実施例1と同様にして、固形分が2%のN-メチルピロリドン分散液を調整した。ここで得られたフタロシアニンロッド分散インキ組成物(3)’を、透過型電子顕微鏡を用いて観察したところ、幅が100nm以上であってその幅に対する長さの比率が20未満の板状である銅フタロシアニンが確認された(図15参照)。該N-メチルピロリドン分散液の安定性は低く、該銅フタロシアニンは振とう後、数分で沈降した。
半導体膜製造に用いたフタロシアニンナノワイヤーインキ組成物(1)を上記フタロシアニンロッド分散インキ組成物(3)’にした以外は、実施例1と同様にして、有機トランジス(3)’を製造した。
上記各有機トランジスタ(2)、(5)、(10)~(17)について、トランジスタ特性を測定した(図2、図20参照)。トランジスタ特性の測定方法は、デジタルマルチメーター(ケースレー製237)を用いて、ゲート電極に0~-80V電圧(Vg)をスイープ印加し、-80V印加したソース・ドレイン電極間の電流(Id)を測定することで行なった。移動度は、√Id-Vgの傾きから、周知の方法により求めた。単位はcm2/V・sである。また、ON/OFF比(以下、ON/OFF)は(Idの絶対値の最大値)/(Idの絶対値の最小値)で求めた。これらの結果を表1に示す。
一方、比較例1及び比較例2の有機トランジスタは、ゲート電圧によりIdは変調せず、トランジスタ特性を示さなかった。
2 フタロシアニンナノワイヤー
3 バインダー樹脂
4 トランジスタ
5 ソース電極
6 ドレイン電極
7 基板
8 ゲート電極
9 ゲート絶縁膜
10 封止層
11 遮光膜
12 層間絶縁膜
13 画素電極
Claims (22)
- フタロシアニン及びフタロシアニン誘導体を含有するフタロシアニンナノワイヤーであって、
短径が100nm以下であり、その短径に対する長さの比率(長さ/短径)が10以上であることを特徴とするフタロシアニンナノワイヤー。 - 前記フタロシアニンが銅フタロシアニン、亜鉛フタロシアニン又は鉄フタロシアニンである請求項1に記載のフタロシアニンナノワイヤー。
- 前記フタロシアニン誘導体が、一般式(1)又は(2)で表されるものである請求項1又は2に記載のフタロシアニンナノワイヤー。
Y1からY4が結合基として存在しない場合には、R1~R4は、SO3H、CO2H、置換基を有してもよいアルキル基、置換基を有してもよい(オリゴ)アリール基、置換基を有してもよい(オリゴ)へテロアリール基、置換基を有してもよいフタルイミド基又は置換基を有してもよいフラーレン類であり、
Y1からY4が、-(CH2)n-(nは1~10の整数を表す)、-CH=CH-、-C≡C-、-O-、-NH-、-S-、-S(O)-、又は-S(O)2-で表される結合基である場合には、R1~R4は、置換基を有してもよいアルキル基、置換基を有してもよい(オリゴ)アリール基、置換基を有してもよい(オリゴ)へテロアリール基、置換基を有してもよいフタルイミド基又は置換基を有してもよいフラーレン類であり、a、b、c及びdは各々独立に0~2の整数を表すが、そのうち少なくとも一つは1である。) - 前記置換基を有してもよいアルキル基が、メチル基、エチル基又はプロピル基であり、置換基を有してもよい(オリゴ)アリール基が、置換基を有してもよい(オリゴ)フェニレン基又は置換基を有してもよい(オリゴ)ナフチレン基であり、置換基を有してもよい(オリゴ)へテロアリール基が、置換基を有してもよい(オリゴ)ピロール基、置換基を有してもよい(オリゴ)チオフェン基、置換基を有してもよい(オリゴ)ベンゾピロール基又は置換基を有してもよい(オリゴ)ベンゾチオフェン基である請求項3に記載のフタロシアニンナノワイヤー。
- 前記フタロシアニン誘導体が、一般式(3)で表されるものである請求項1又は2に記載のフタロシアニンナノワイヤー。
- 請求項1に記載のフタロシアニンナノワイヤーと有機溶剤とを必須成分とするインキ組成物。
- フタロシアニンナノワイヤーの含有率が0.05~20質量%の範囲である請求項6に記載のインキ組成物。
- 前記有機溶剤が、アミド系有機溶剤、芳香族系有機溶剤又はハロゲン系有機溶剤である請求項6に記載のインキ組成物。
- 前記アミド系有機溶剤が、N-メチルピロリドン、N,N-ジメチルホルムアミド、N,N-ジエチルホルムアミド又はN,N-ジメチルアセトアミドである請求項8に記載のインキ組成物。
- 前記芳香族系有機溶剤が、トルエン、キシレン、エチルベンゼン、クロロベンゼン又はジクロロベンゼンである請求項8に記載のインキ組成物。
- 前記ハロゲン系有機溶剤が、クロロホルム、塩化メチレン又はジクロロエタンである請求項8に記載のインキ組成物。
- 更に造膜性材料を含有してなる請求項6に記載のインキ組成物。
- 該造膜性材料がポリメチルメタクリレート、ポリチオフェン、ポリフェニレンビニレン、ポリスチレン、ポリカーボネート又はポリビニルカルバゾールである請求項12に記載のインキ組成物。
- 請求項1に記載のフタロシアニンナノワイヤーを含有することを特徴とする膜。
- 更に造膜性材料を含有してなる請求項14に記載の膜。
- 該造膜性材料がポリメチルメタクリレート、ポリチオフェン、ポリフェニレンビニレン、ポリスチレン、ポリカーボネート又はポリビニルカルバゾールである請求項15に記載の膜。
- 請求項14に記載の膜を有することを特徴とする電子素子。
- 請求項1に記載のフタロシアニンナノワイヤーの製造方法において、
(1)フタロシアニンとフタロシアニン誘導体とを酸に溶解させた後に、貧溶媒に析出させて複合体を得る工程(a)、
(2)前記複合体を微粒子化して、微粒子化複合体を得る工程(b)、
(3)前記微粒子化複合体を有機溶媒に分散させて分散体を得る工程(c)、
(4)前記分散体を加熱してナノワイヤー化する工程(d)、
を有することを特徴とするフタロシアニンナノワイヤーの製造方法。 - 前記工程(a)における酸が、硫酸、クロロ硫酸、メタンスルホン酸又はトリフルオロ酢酸である請求項18に記載のフタロシアニンナノワイヤーの製造方法。
- 前記工程(c)における有機溶媒がアミド系有機溶剤又は芳香族系有機溶剤である請求項18に記載のフタロシアニンナノワイヤーの製造方法。
- 前記アミド系有機溶媒がN-メチルピロリドン、ジメチルホルムアミド、ジエチルホルムアミド又はN,N-ジメチルアセトアミドである請求項20に記載のフタロシアニンナノワイヤーの製造方法。
- 前記芳香族系有機溶剤が、トルエン、キシレン、エチルベンゼン、クロロベンゼン又はジクロロベンゼンである請求項20に記載のフタロシアニンナノワイヤーの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020117004284A KR101195078B1 (ko) | 2009-04-23 | 2010-04-13 | 프탈로시아닌 나노 와이어, 그것을 함유하는 잉크 조성물 및 전자 소자, 및 프탈로시아닌 나노 와이어의 제조 방법 |
CN201080003942.5A CN102272234B (zh) | 2009-04-23 | 2010-04-13 | 酞菁纳米线、含有它的油墨组合物及电子元件、以及酞菁纳米线的制造方法 |
EP10766978.0A EP2423264B1 (en) | 2009-04-23 | 2010-04-13 | Phthalocyanine nanowires, ink composition and electronic element each containing same, and method for producing phthalocyanine nanowires |
US13/265,594 US8470204B2 (en) | 2009-04-23 | 2010-04-13 | Phthalocyanine nanowires, ink composition and electronic element each containing same, and method for producing phthalocyanine nanowires |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009105175A JP5288198B2 (ja) | 2009-04-23 | 2009-04-23 | 金属フタロシアニンナノワイヤーの製造方法 |
JP2009-105175 | 2009-04-23 | ||
JP2009105174A JP5387116B2 (ja) | 2009-04-23 | 2009-04-23 | 金属フタロシアニンナノワイヤー及びその製造方法 |
JP2009-105174 | 2009-04-23 | ||
JP2009-204633 | 2009-09-04 | ||
JP2009204633 | 2009-09-04 | ||
JP2009246485 | 2009-10-27 | ||
JP2009-246485 | 2009-10-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010122921A1 true WO2010122921A1 (ja) | 2010-10-28 |
Family
ID=43011039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/056579 WO2010122921A1 (ja) | 2009-04-23 | 2010-04-13 | フタロシアニンナノワイヤー、それを含有するインキ組成物及び電子素子、並びにフタロシアニンナノワイヤーの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8470204B2 (ja) |
EP (1) | EP2423264B1 (ja) |
KR (1) | KR101195078B1 (ja) |
CN (1) | CN102272234B (ja) |
TW (1) | TWI419938B (ja) |
WO (1) | WO2010122921A1 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011065133A1 (ja) * | 2009-11-26 | 2011-06-03 | Dic株式会社 | 光電変換素子用材料及び光電変換素子 |
JP4998645B1 (ja) * | 2011-05-19 | 2012-08-15 | Dic株式会社 | フタロシアニンナノロッド、及び光電変換素子 |
JP2012230946A (ja) * | 2011-04-25 | 2012-11-22 | Dic Corp | フタロシアニンナノワイヤーの製造方法 |
JP2013030545A (ja) * | 2011-07-27 | 2013-02-07 | Dic Corp | フタロシアニンナノワイヤーの製造方法 |
CN103329298A (zh) * | 2010-11-05 | 2013-09-25 | 香港城市大学 | 用于光电子学的酞菁/聚合物纳米复合墨水 |
WO2013151128A1 (ja) | 2012-04-06 | 2013-10-10 | Dic株式会社 | フタロシアニンナノサイズ構造物、及び該ナノサイズ構造物を用いた電子素子 |
JP2014534953A (ja) * | 2011-09-26 | 2014-12-25 | ポハン ユニバーシティー オブ サイエンス アンド テクノロジー インダストリー アカデミー コーペレーション コープス | 水溶解度及び水分散性が向上されたα型亜鉛フタロシアニンナノワイヤー、α型亜鉛フタロシアニンナノワイヤー/フェノチアジン複合体、及びその製造方法 |
CN113388137A (zh) * | 2021-05-21 | 2021-09-14 | 电子科技大学 | 一种高强度耐高温聚芳醚腈薄膜的制备方法 |
JP2023503891A (ja) * | 2019-11-20 | 2023-02-01 | ポステック・リサーチ・アンド・ビジネス・ディヴェロップメント・ファウンデイション | 新規なフタロシアニンナノワイヤーおよびその用途 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8929054B2 (en) * | 2010-07-21 | 2015-01-06 | Cleanvolt Energy, Inc. | Use of organic and organometallic high dielectric constant material for improved energy storage devices and associated methods |
TWI413662B (zh) * | 2011-05-19 | 2013-11-01 | Dainippon Ink & Chemicals | 酞青素奈米棒及光電轉換元件 |
CN102738416A (zh) * | 2012-06-13 | 2012-10-17 | 上海大学 | 一种有机半导体纳米线的制备工艺 |
CN103142275B (zh) * | 2012-12-27 | 2015-05-06 | 苏州天臣国际医疗科技有限公司 | 指针件及设有该指针件的圆管型吻合器 |
CN103142271B (zh) * | 2012-12-27 | 2015-05-06 | 苏州天臣国际医疗科技有限公司 | 操作把手及设有该操作把手的圆管型吻合器 |
CN105283926B (zh) | 2013-03-15 | 2019-05-10 | 克林伏特能源有限公司 | 利用有机和有机金属高介电常数材料改进能量存储设备中的电极和电流及其改进方法 |
KR102026165B1 (ko) * | 2013-04-26 | 2019-09-27 | 쇼와 덴코 가부시키가이샤 | 도전 패턴의 제조방법 및 도전 패턴 형성 기판 |
CN103664965B (zh) * | 2013-09-10 | 2016-08-10 | 常州大学 | 一种制备酞菁微纳米结构的方法 |
CN105294706B (zh) * | 2015-11-03 | 2018-09-07 | 昆明学院 | 新晶体结构酞菁铁纳米线及其制备方法 |
KR20180095028A (ko) * | 2015-12-16 | 2018-08-24 | 메르크 파텐트 게엠베하 | 둘 이상의 상이한 용매의 혼합물을 함유하는 제형 |
KR102284849B1 (ko) | 2016-06-01 | 2021-07-30 | 한국화학연구원 | 청색 안료 시너지스트, 이를 포함하는 청색 안료잉크 조성물 및 이의 제조방법 |
US20220119665A1 (en) * | 2020-10-20 | 2022-04-21 | The Boeing Company | Phthalonitrile-based high temperature resistive inks |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003071799A (ja) * | 2001-09-04 | 2003-03-12 | Mitsubishi Chemicals Corp | ナノワイヤ及びその製造方法 |
WO2003076332A1 (fr) * | 2002-03-08 | 2003-09-18 | Communications Research Laboratory, Independent Administrative Institution | Dispositif et procede pour la realisation d'un nanofil conducteur |
JP2004067883A (ja) * | 2002-08-07 | 2004-03-04 | Inst Of Physical & Chemical Res | 微粒子の製造方法 |
JP2007005684A (ja) * | 2005-06-27 | 2007-01-11 | National Institute Of Information & Communication Technology | 導電性ナノワイヤーを用いたトランジスタ |
JP2007000991A (ja) * | 2005-06-27 | 2007-01-11 | National Institute Of Information & Communication Technology | 非導電性ナノワイヤー及びその製造方法 |
WO2007089482A2 (en) * | 2006-01-26 | 2007-08-09 | 3M Innovative Properties Company | Method for making nanostructures with chromonics |
JP2009280531A (ja) * | 2008-05-23 | 2009-12-03 | Dic Corp | 金属フタロシアニンナノワイヤー及びその製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5248336A (en) * | 1991-11-05 | 1993-09-28 | Miles Inc. | Solid solutions of copper phthalocyanine compounds |
US6313288B1 (en) * | 1998-11-18 | 2001-11-06 | Ricoh Company, Ltd. | Mixture of titanyltetraazaporphyrin compounds and electrophotographic photoconductor using the same |
JP2002121420A (ja) | 2000-08-07 | 2002-04-23 | Dainippon Ink & Chem Inc | 銅フタロシアニン顔料及びその製造方法 |
US20060175601A1 (en) * | 2000-08-22 | 2006-08-10 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
DE60327049D1 (de) * | 2002-01-24 | 2009-05-20 | Fujifilm Corp | Tinte für tintenstrahldruck, methode zur herstellung der tinte sowie tintenstrahldruckmethode |
JP2004026992A (ja) * | 2002-06-25 | 2004-01-29 | Riso Kagaku Corp | 孔版印刷用インキ |
JP4326197B2 (ja) | 2002-08-30 | 2009-09-02 | 独立行政法人科学技術振興機構 | 顔料ナノ粒子の新規な製造方法 |
DE10319742A1 (de) * | 2003-04-30 | 2004-11-18 | Basf Ag | Pulverisierte organische Halbleiter und Verfahren zum Aufdampfen auf einen Träger |
DE10329711A1 (de) | 2003-07-02 | 2005-01-27 | Bayer Chemicals Ag | Verfahren zur Herstellung von alkoxysubstituierten Phthalocyaninen |
JP2005145896A (ja) | 2003-11-17 | 2005-06-09 | Dainippon Ink & Chem Inc | 金属フタロシアニンの製造方法 |
DE102004001457A1 (de) | 2004-01-08 | 2005-09-01 | Basf Ag | Verfahren zur Herstellung von Phthaloxyaninen |
JP4625947B2 (ja) | 2004-11-22 | 2011-02-02 | 国立大学法人広島大学 | 光電子的デバイス |
JP2007039561A (ja) | 2005-08-03 | 2007-02-15 | Fujifilm Holdings Corp | フタロシアニン類の製造方法 |
US7341944B2 (en) * | 2005-09-15 | 2008-03-11 | Honda Motor Co., Ltd | Methods for synthesis of metal nanowires |
CN1958688A (zh) * | 2006-11-24 | 2007-05-09 | 东华大学 | 一种纳米颜料及其制备方法和应用 |
JP2008266382A (ja) * | 2007-04-17 | 2008-11-06 | Fujifilm Corp | フタロシアニン顔料ナノ粒子分散物の製造方法、及びその分散物を含有するカラーフィルタ用インクジェットインクの製造方法、並びにその分散物を含有する着色感光性樹脂組成物、感光性転写材料、及びカラーフィルタ、それらを用いた液晶表示装置及びccdデバイス |
JP2008303383A (ja) | 2007-05-10 | 2008-12-18 | Fujifilm Corp | フタロシアニン化合物を含む有機半導体 |
JP2009135237A (ja) | 2007-11-29 | 2009-06-18 | Nagoya Institute Of Technology | 溶解性フラーレン誘導体 |
JP5387116B2 (ja) | 2009-04-23 | 2014-01-15 | Dic株式会社 | 金属フタロシアニンナノワイヤー及びその製造方法 |
JP5288198B2 (ja) * | 2009-04-23 | 2013-09-11 | Dic株式会社 | 金属フタロシアニンナノワイヤーの製造方法 |
-
2010
- 2010-04-13 WO PCT/JP2010/056579 patent/WO2010122921A1/ja active Application Filing
- 2010-04-13 US US13/265,594 patent/US8470204B2/en active Active
- 2010-04-13 EP EP10766978.0A patent/EP2423264B1/en not_active Not-in-force
- 2010-04-13 CN CN201080003942.5A patent/CN102272234B/zh active Active
- 2010-04-13 KR KR1020117004284A patent/KR101195078B1/ko active IP Right Grant
- 2010-04-22 TW TW099112657A patent/TWI419938B/zh not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003071799A (ja) * | 2001-09-04 | 2003-03-12 | Mitsubishi Chemicals Corp | ナノワイヤ及びその製造方法 |
WO2003076332A1 (fr) * | 2002-03-08 | 2003-09-18 | Communications Research Laboratory, Independent Administrative Institution | Dispositif et procede pour la realisation d'un nanofil conducteur |
JP2004067883A (ja) * | 2002-08-07 | 2004-03-04 | Inst Of Physical & Chemical Res | 微粒子の製造方法 |
JP2007005684A (ja) * | 2005-06-27 | 2007-01-11 | National Institute Of Information & Communication Technology | 導電性ナノワイヤーを用いたトランジスタ |
JP2007000991A (ja) * | 2005-06-27 | 2007-01-11 | National Institute Of Information & Communication Technology | 非導電性ナノワイヤー及びその製造方法 |
WO2007089482A2 (en) * | 2006-01-26 | 2007-08-09 | 3M Innovative Properties Company | Method for making nanostructures with chromonics |
JP2009280531A (ja) * | 2008-05-23 | 2009-12-03 | Dic Corp | 金属フタロシアニンナノワイヤー及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2423264A4 * |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8629431B2 (en) | 2009-11-26 | 2014-01-14 | Dic Corporation | Material for photoelectric conversion device and photoelectric conversion device |
JP4844701B2 (ja) * | 2009-11-26 | 2011-12-28 | Dic株式会社 | 光電変換素子用材料及び光電変換素子 |
WO2011065133A1 (ja) * | 2009-11-26 | 2011-06-03 | Dic株式会社 | 光電変換素子用材料及び光電変換素子 |
CN103329298A (zh) * | 2010-11-05 | 2013-09-25 | 香港城市大学 | 用于光电子学的酞菁/聚合物纳米复合墨水 |
US9200172B2 (en) | 2010-11-05 | 2015-12-01 | City University Of Hong Kong | Phthalocyanine/ polymer nanocomposite ink for optoelectonics |
JP2012230946A (ja) * | 2011-04-25 | 2012-11-22 | Dic Corp | フタロシアニンナノワイヤーの製造方法 |
JP4998645B1 (ja) * | 2011-05-19 | 2012-08-15 | Dic株式会社 | フタロシアニンナノロッド、及び光電変換素子 |
WO2012157110A1 (ja) | 2011-05-19 | 2012-11-22 | Dic株式会社 | フタロシアニンナノロッド、及び光電変換素子 |
US8895850B2 (en) | 2011-05-19 | 2014-11-25 | DIC Corporation (Tokyo) | Phthalocyanine nanorod and photoelectric conversion device |
CN103429668A (zh) * | 2011-05-19 | 2013-12-04 | Dic株式会社 | 酞菁纳米棒及光电转换元件 |
JP2013030545A (ja) * | 2011-07-27 | 2013-02-07 | Dic Corp | フタロシアニンナノワイヤーの製造方法 |
JP2014534953A (ja) * | 2011-09-26 | 2014-12-25 | ポハン ユニバーシティー オブ サイエンス アンド テクノロジー インダストリー アカデミー コーペレーション コープス | 水溶解度及び水分散性が向上されたα型亜鉛フタロシアニンナノワイヤー、α型亜鉛フタロシアニンナノワイヤー/フェノチアジン複合体、及びその製造方法 |
KR20140105540A (ko) | 2012-04-06 | 2014-09-01 | 디아이씨 가부시끼가이샤 | 프탈로시아닌 나노사이즈 구조물, 및 당해 나노사이즈 구조물을 사용한 전자 소자 |
JP2013216603A (ja) * | 2012-04-06 | 2013-10-24 | Dic Corp | フタロシアニンナノサイズ構造物、及び該ナノサイズ構造物を用いた電子素子 |
WO2013151128A1 (ja) | 2012-04-06 | 2013-10-10 | Dic株式会社 | フタロシアニンナノサイズ構造物、及び該ナノサイズ構造物を用いた電子素子 |
US9324956B2 (en) | 2012-04-06 | 2016-04-26 | Dic Corporation | Phthalocyanine nano-size structures, and electronic elements using said nano-size structures |
KR101715205B1 (ko) | 2012-04-06 | 2017-03-10 | 디아이씨 가부시끼가이샤 | 프탈로시아닌 나노사이즈 구조물, 및 당해 나노사이즈 구조물을 사용한 전자 소자 |
JP2023503891A (ja) * | 2019-11-20 | 2023-02-01 | ポステック・リサーチ・アンド・ビジネス・ディヴェロップメント・ファウンデイション | 新規なフタロシアニンナノワイヤーおよびその用途 |
CN113388137A (zh) * | 2021-05-21 | 2021-09-14 | 电子科技大学 | 一种高强度耐高温聚芳醚腈薄膜的制备方法 |
CN113388137B (zh) * | 2021-05-21 | 2022-04-15 | 电子科技大学 | 一种高强度耐高温聚芳醚腈薄膜的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2423264A4 (en) | 2013-08-21 |
EP2423264A1 (en) | 2012-02-29 |
CN102272234B (zh) | 2014-05-07 |
KR101195078B1 (ko) | 2012-10-29 |
US20120104335A1 (en) | 2012-05-03 |
EP2423264B1 (en) | 2015-03-25 |
US8470204B2 (en) | 2013-06-25 |
TW201041979A (en) | 2010-12-01 |
CN102272234A (zh) | 2011-12-07 |
TWI419938B (zh) | 2013-12-21 |
KR20110049824A (ko) | 2011-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2010122921A1 (ja) | フタロシアニンナノワイヤー、それを含有するインキ組成物及び電子素子、並びにフタロシアニンナノワイヤーの製造方法 | |
KR101715205B1 (ko) | 프탈로시아닌 나노사이즈 구조물, 및 당해 나노사이즈 구조물을 사용한 전자 소자 | |
KR101364221B1 (ko) | 프탈로시아닌 나노로드, 및 광전 변환 소자 | |
JP4844701B2 (ja) | 光電変換素子用材料及び光電変換素子 | |
JP4666115B1 (ja) | フタロシアニンナノワイヤー、それを含有するインキ組成物及び電子素子、並びにフタロシアニンナノワイヤーの製造方法 | |
JP5704037B2 (ja) | フタロシアニンナノサイズ構造物集合体の製造方法、及び該フタロシアニンナノサイズ構造物集合体を用いた電子デバイス | |
JP5858272B2 (ja) | フタロシアニンナノワイヤーの製造方法 | |
JP5858270B2 (ja) | フタロシアニンナノワイヤーの製造方法 | |
TWI413662B (zh) | 酞青素奈米棒及光電轉換元件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080003942.5 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10766978 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20117004284 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010766978 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13265594 Country of ref document: US |