WO2010118105A1 - Improved silicon thin film deposition for photovoltaic device applications - Google Patents
Improved silicon thin film deposition for photovoltaic device applications Download PDFInfo
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- WO2010118105A1 WO2010118105A1 PCT/US2010/030199 US2010030199W WO2010118105A1 WO 2010118105 A1 WO2010118105 A1 WO 2010118105A1 US 2010030199 W US2010030199 W US 2010030199W WO 2010118105 A1 WO2010118105 A1 WO 2010118105A1
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- silicon
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 118
- 229910052710 silicon Inorganic materials 0.000 title claims description 111
- 239000010703 silicon Substances 0.000 title claims description 110
- 238000000427 thin-film deposition Methods 0.000 title description 4
- 238000000034 method Methods 0.000 claims abstract description 101
- 238000000151 deposition Methods 0.000 claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- 230000008021 deposition Effects 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims description 118
- 239000011521 glass Substances 0.000 claims description 82
- 238000005266 casting Methods 0.000 claims description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 17
- 239000006060 molten glass Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 12
- 229910001887 tin oxide Inorganic materials 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 229910021478 group 5 element Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical group [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 5
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 abstract description 27
- 239000005329 float glass Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 236
- 239000007789 gas Substances 0.000 description 59
- 239000010409 thin film Substances 0.000 description 56
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 22
- 239000007858 starting material Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 229910000077 silane Inorganic materials 0.000 description 15
- 239000000126 substance Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 230000005611 electricity Effects 0.000 description 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- 239000011358 absorbing material Substances 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000008030 elimination Effects 0.000 description 4
- 238000003379 elimination reaction Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 230000002860 competitive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002803 fossil fuel Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 239000006066 glass batch Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 210000004692 intercellular junction Anatomy 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
- RXPQRKFMDQNODS-UHFFFAOYSA-N tripropyl phosphate Chemical compound CCCOP(=O)(OCCC)OCCC RXPQRKFMDQNODS-UHFFFAOYSA-N 0.000 description 1
- CQXYINNETWHZTR-UHFFFAOYSA-N tritert-butyl phosphate Chemical compound CC(C)(C)OP(=O)(OC(C)(C)C)OC(C)(C)C CQXYINNETWHZTR-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates generally to silicon based thin film deposition for use in photovoltaic (PV) devices and methods of making the same. More particularly, the invention relates to improved methods for increasing the efficiency of the deposition of silicon based thin films on photovoltaic substrates.
- a photovoltaic (PV) module represents such a technology and, to date, has found many applications in areas such as remote power systems, space vehicles and consumer products, such as wireless devices.
- PV photovoltaic
- the photoelectric effect of PV devices can be realized by the utilization of semiconducting materials such as silicon (Si), gallium arsenide (GaAs), cadmium sulfide (CdS), cadmium telluride (CdTe), copper indium diselenide (CuInSe 2 , also referred to as CIS) and copper indium gallium diselenide (CuInGaSe 2 , also referred to as CIGS).
- silicon is most frequently used in photovoltaic devices because of: 1 ) its availability; and 2) its lower cost as compared to the materials GaAs, CdS, CdTe, CIS and CIGS.
- silicon based PV devices have been found to be less efficient than those based on GaAs, CdS, CdTe, CIS and CIGS.
- PV modules are known to incorporate PV substrates, such as glass, coated with thin films.
- Thin film photovoltaics further incorporate a transparent front conductor, usually also a thin film.
- the most common conductive thin films used are transparent conductive oxides (TCO) such as tin oxide, fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO).
- TCO transparent conductive oxides
- FTO fluorine-doped tin oxide
- AZO aluminum-doped zinc oxide
- ITO indium tin oxide
- the main function of a TCO is two-fold. First, the TCO allows light to pass through to an active light absorbing material beneath it. Second, the TCO serves as an ohmic contact to transport photo-generated charges away from the light absorbing material.
- Such TCOs are desirable for all types of photovoltaic and solar modules, and are especially desirable for photovoltaic modules based on silicon.
- Glass is omnipresent and, as such, provides an existing infrastructure for deployment of PV thin films. Additionally, glass production methods are well known. One such well known glass production method is the float-line method for producing float, or flat, glass. As a result of this desirability for thin films on glass, many methods exist for producing thin film coatings on glass. One of these existing methods is known as "on-line" deposition, wherein a coating apparatus is disposed either in a tin bath of a float-line or downstream of a tin bath of a float-line. [0008] Typically, PV module manufacturers purchase PV substrates that include, for example, the generic structure: glass-substrate/undercoating (UC)/TCO. More specifically, a glass substrate with an undercoating of silicon oxycarbide and a TCO layer of fluorine doped tin oxide, wherein both the undercoating and the TCO layers are deposited pyrolytically in an on-line process.
- UUC glass-substrate/
- Process steps needed for deposition of the semiconducting thin films include, but are not limited to: A) cleaning and washing of the PV module substrate prior to deposition of semi-conductor thin film layers; B) re-heating and re- cooling of the PV module substrate prior to deposition of semiconductor thin film layers; and C) deposition of semiconductor thin film layers. After deposition of the semiconducting thin film layers, further processing steps are required to arrive at the final PV module.
- These steps include, but are not limited to: D) laser scribing of the silicon layers to form individual PV cells; E) forming a back contact; F) laminating the PV module; G) wiring of the PV module; H) potting of the PV module; and I) testing of the PV module.
- the present invention provides methods for deposition of silicon thin films on PV module substrates.
- Figure 1 shows the coating structure of a prior art PV substrate: glass/UC/TCO.
- Figure 2 shows the structure of single-junction p-i-n type silicon layers disposed on a PV substrate in accordance with the present invention.
- Figure 3 shows the structure of double-junction p-i-n type silicon layers disposed on a PV substrate in accordance with the present invention.
- Figure 4 shows the structure of triple-junction p-i-n type silicon layers disposed on a PV substrate in accordance with the present invention.
- Figure 5 shows the structure of single-junction n-i-p type silicon layers disposed on a PV substrate in accordance with the present invention.
- Figure 6 shows the structure of double-junction n-i-p type silicon layers disposed on a PV substrate in accordance with the present invention.
- Figure 7 shows the structure of triple-junction n-i-p type silicon layers disposed on a PV substrate in accordance with the present invention.
- the methods in accordance with the present invention provide PV module substrates, including those of the general formula: glass- substrate/Undercoat Layer/TCO/p-type metal/n-type metal or glass- substrate/Undercoat Layer/TCO/p-type metal/i-type metal/n-type metal.
- Those of skill in the art will recognize the ordering of p-type metal/n-type metal and p-type metal/i-type metal/n-type metal as a single p-n type junction and a single p-i-n type junction, respectively.
- the methods in accordance with the present invention are easily adapted and configured to produce double-, triple- and multi- p-(i-)n type junctions. Such adaptations and configurations will be recognized and appreciated by those of skill in the art.
- the methods in accordance with the present invention are also easily adapted and configured to produce double-, triple- and multi- n-(i-)p type junctions.
- Methods in accordance with the present invention can also be adapted to introduce an additional thin film layer, or layers, into the coating structure described above.
- Such an additional layer(s) may be disposed above or below the metal layers.
- another undercoating thin film layer may be disposed above the glass substrate and below the metal layers (and below the TCO layer) to form a PV module substrate of the general formula: glass- substrate/Undercoat Layer 1 /Undercoat Layer 2/TCO/p-type metal/i-type metal/n- type metal.
- the choice of the number of undercoatings will be recognized and appreciated by those of skill in the art.
- another TCO thin film layer may be disposed above or below the first TCO thin film layer to form a PV module substrate of the general formula: glass-substrate/Undercoat Layer/TCO Layer 1/TCO Layer 2/p-type metal/i-type m eta l//n -type metal.
- the choice of the number of TCO thin film layers will be recognized and appreciated by those of skill in the art.
- an additional layer or layers may be disposed between the TCO layer and the metal layers.
- IFL inter- facial layer
- a PV module substrate of the general formula: glass-substrate/Undercoat Layer/TCO/IFL/p-type metal/i-type metal/n-type metal.
- IFL(s) can impart mechanical and chemical durability to PV substrates and can also enhance the optical properties of the PV substrate.
- Known IFLs are based on oxides of titanium, oxides of zinc and combination of oxides of titanium and zinc.
- the "undercoat layer,” or UC, is a thin film layer that provides the necessary index of refraction for color neutralization and thereby aids in improving the transmittance of a PVTCO module.
- the "transparent conductive oxide,” or TCO is a thin film layer that is made from a metal and an oxide. With respect to PV modules, the TCO functions to allow light to pass through to an active light absorbing material beneath it and to serve as an ohmic contact to transport photo-generated charges away from the light absorbing material.
- N-Layer or a negatively charged layer of semiconducting material, is one that has been chemically combined (i.e., doped) when deposited with a phosphorus, or other Group V element, starting material to make it conductive. It is noted that the n-layer can be passivated with hydrogen.
- n-type silicon, or n-Si is a layer of metallic silicon that is doped with a Group V element.
- P-Layer or a positively charged layer of semiconducting material, is one that has been chemically combined (i.e., doped) when deposited with a boron, or other Group III element, starting material, which turns it into a conductive material that readily accepts electrons. It is noted that p-type silicon can be passivated with hydrogen. For example, p-type silicon, or p-Si, is a layer of metallic silicon that is doped with a Group III element.
- I-Type Silicon is silicon, or a layer of silicon, that has been deposited without combining it with another chemical.
- i-Si is silicon, or a layer of silicon, that is un-doped.
- I-Si is also referred to as intrinsic-type silicon.
- i-type silicon can be passivated with hydrogen.
- Amorphous silicon or a-Si, is a non-crystalline allotropic form of silicon. In a-Si, there is no long range crystalline ordering and the atoms form a continuous random network. If desired, the material can be passivated by hydrogen, which reduces interlayer diffusion. [0046] There are several types of "Crystalline silicon,” or c-Si. Each is characterized by crystal size such as nanocrystalline silicon (nc-Si), microcrystalline silicon ( ⁇ c-Si), or polycrystalline.
- P-N junction refers to a junction, or contact, formed by combining P-type and N-type semiconductor thin film layers together in very close contact.
- junction refers to the region where the two regions of the semiconductor thin film layers meet.
- P-I-N junction refers to the basic scenario as follows: A three-layer sandwich is created, with a middle intrinsic (i-type or undoped) layer between an n-type layer and a p-type layer.
- N-I-P junction refers to the basic scenario as follows: A three-layer sandwich is created, with a middle intrinsic (i-type or undoped) layer between a p-type layer and an n-type layer. For either scenario, this geometry generates an electric current between the p- and n-type regions.
- a-Si amorphous silicon
- Single-junction refers to a PV module with a single region of transition between semiconductor layers, such as a p-n junction, which goes from a region that has a high concentration of electron acceptors (p-type) to one that has a high concentration of electron donors (n-type).
- Multi-junction refers to a PV device containing two or more cell junctions, each of which is optimized for a particular part of the solar spectrum, to achieve greater overall efficiency.
- This type of structure also referred to as a tandem cell, can achieve higher total conversion efficiency by capturing a larger portion of the solar spectrum.
- Float glass or "flat glass” refers to glass produced on a float-line by floating a continuous stream of molten glass onto a bath of molten tin. The molten glass spreads onto the surface of the metal and produces a high quality, consistently level sheet of glass.
- “Casted glass” or “patterned glass” refers to glass produced by casting a continuous stream of molten glass through casting rolls or by allowing molten glass to solidify in a mold.
- On-line methods or “on-line” is a term well-known and understood to those in the glass coating arts and, for purposes herein, refers to coating a glass during production of the glass on a glass manufacturing line. This includes but is not limited to float glass and casted glass.
- Off-line methods or “off-line” is also a term well-known and understood to those in the glass coating arts and, for purposes herein, refers to coating glass after the glass has been produced and removed from a glass manufacturing line.
- pW Peak Watt
- pWs of a cell is the DC power output in watts as measured under an industry standardized light test before the PV module leaves the manufacturer's facility. The standard light test tests the output power when illuminated under standard conditions of 1000 watts of light intensity per square meter, 25 0 C ambient temperature and a spectrum similar to sunlight that has passed through the atmosphere.
- PV substrates can occur with deposition of the necessary semi-conducting thin film layers.
- Two of those drawbacks are the length of time needed to deposit the semiconducting layers and the cost of depositing the semi-conducting layers.
- the production time of about two to about four hours includes, but is not limited to, the process steps of: loading of the purchased PV substrate onto a conveyor; washing and cleaning of the PV substrate while on the conveyor; reheating and re-cooling of the PV substrate while on the conveyor to create optimal conditions for semi-conductor thin film layer deposition; and deposition of the semiconductor thin film layers.
- the semi-conducting thin film layers can be deposited during the on-line process.
- the choice of semi-conducting material is not particularly limited as long as the material is able to be deposited on-line.
- Methods in accordance with the present invention can provide on-line produced PV module substrates of the general formula: A) glass substrate/UC/TCO/p-Si/i-Si/n-Si ⁇ p-i-n single junction); B) glass substrate/UC/TCO/p- Si/i-Si/n-Si/p-Si/i-Si/n-Si ⁇ p-i-n double junction); and C) glass substrate/UC/TCO/p- Si/i-Si/n-Si/p-Si/i-Si/n-Si/p-Si/i-Si/n-Si (p-i-n triple junction).
- the methods in accordance with the present invention can also provide on-line produced PV module substrates of the general formula: A) glass substrate/UC/TCO/n-Si/i-Si/p-Si ⁇ n-i-p single junction); B) glass substrate/UC/TCO/n- Si/i-Si/p-Si/n-Si/i-Si/p-Si ⁇ n-i-p double junction); and C) glass substrate/UC/TCO/n- Si/i-Si/p-Si/n-Si/i-Si/p-Si/n-Si/i/p-Si (n-i-p triple junction).
- n-i-p layers discussed herein are representative of the present invention. Those of skill in the art will know how to adapt the methods described herein for the production of PV module substrates that comprise more than three n-i-p junctions.
- the undercoating layer of the present invention while not particularly limited, it is preferable to use silicon oxide, silicon dioxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide and combinations thereof.
- silicon oxide, silicon dioxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide and combinations thereof for the undercoating layer of the present invention, it is most preferable to use a thin film of silicon oxycarbide as the undercoating.
- the TCO layer of the present invention while not particularly limited, it is preferable to use tin oxide, fluorine-doped tin oxide (FTO), aluminum- doped zinc oxide (AZO) and indium tin oxide (ITO).
- FTO fluorine-doped tin oxide
- AZO aluminum- doped zinc oxide
- ITO indium tin oxide
- the choice of semi-conducting material is not particularly limited as long as the material is able to be pyrolytically deposited.
- Semi-conducting metals that are known to be able to be pyrolytically deposited are silicon, cadmium, tellurium, indium, gallium, arsenic, antimony, aluminum, zinc and combination thereof.
- Silicon can be pyrolytically deposited from the starting material silane at elevated temperatures.
- p-type silicon layers combining a boron containing starting material with silane leads to a positively charged p-type silicon layer.
- n-type silicon layers combining a phosphorous containing starting material with silane leads to a negatively charged n-type silicon layer.
- i-type silicon no other chemical starting material is necessary outside of silane, as it is an un-doped silicon layer.
- the i-Si layer can be passivated with hydrogen. This can be accomplished by combining the silane with hydrogen gas.
- Soda-lime silica glass can be made from well-known glass batch compositions.
- the glass batch composition can be melted by heating in a glass melting furnace and then directed to a tin bath of a float-line setup.
- the melted glass is directed to either casting roller(s) or to casting mold(s).
- the undercoating layer can be deposited.
- the coater is positioned downstream from either the casting roller(s) or the casting mold(s).
- the transparent conductive oxide thin film layer can be deposited.
- an n-Si or a p-Si layer can be pyrolytically deposited onto the PV substrate containing an undercoating and a transparent conductive oxide layer.
- a mixed gas stream containing silane (SiH 4 ) and a dopant can be directed to a heated surface of the glass ribbon for creation and deposition of an n-Si thin film layer.
- the dopant most frequently used for fabrication of n-Si layers is a Group V element, such as phosphorous.
- the choice of phosphorous containing starting materials for doping of n-Si layers includes, but is not limited to, thmethyl phosphate, triethyl phosphate, tripropyl phosphate, tributyl phosphate, tri-t-butyl phosphate and phosphine.
- phosphine for doping of the n-Si layers of the present invention.
- the gases of the mixed gas stream included for each of the aforementioned starting materials can be supplied at the following rate ranges: 1 ) silane (SiH 4 ) 0.0 - 50.0 g/min; and 2) phosphine (PH 3 ) 0.0 - 25.0 g/min.
- Preferred ranges for starting material delivery is: 1 ) silane (SiH 4 ) 0.5 - 30.0 g/min; and 2) phosphine (PH 3 ) 0.5 - 15.0 g/min.
- silane SiH 4
- PH 3 phosphine
- such n-Si layers in accordance with the present invention can be passivated with hydrogen by inclusion of hydrogen gas in the mixed gas stream of starting materials.
- the hydrogen gas can be supplied at the rate range of 0.0 - 20.0 g/min.
- a preferred range of hydrogen gas can be supplied at the rate range of 0.5 - 10 g/min.
- a mixed gas stream containing silane (SiH 4 ) and a dopant can be directed to a heated surface of the glass ribbon for creation and deposition of a p-Si thin film layer.
- the dopant most frequently used for fabrication of p-Si layers is a Group III element, such as boron.
- the choice of boron containing starting materials for doping of p-Si layers include, but is not limited to, diborane, boron tribromide, boron trichloride, boron thfluoride and boron thiodide.
- diborane for doping of the p-Si layers of the present invention.
- the gases of the mixed gas stream included for each of the aforementioned starting materials can be supplied at the following rate ranges: 1 ) silane (SiH 4 ) 0.0 - 50.0 g/min; and 2) diborane (B 2 H 6 ) 0.0 - 25.0 g/min.
- Preferred ranges for starting material delivery is: 1 ) silane (SiH 4 ) 0.5 - 30.0 g/min; and 2) diborane (B 2 H 6 ) 0.5 - 15.0 g/min.
- such p-Si layers in accordance with the present invention can be passivated with hydrogen by inclusion of hydrogen gas in the mixed gas stream of starting materials.
- the hydrogen gas can be supplied at the rate range of 0.0 - 20.0 g/min.
- a preferred range of hydrogen gas can be supplied at the rate range of 0.5 - 10 g/min.
- an n-Si or a p-Si layer can be pyrolytically deposited onto the PV substrate.
- the choice of either an n-Si layer or a p-Si layer being produced from the fourth coater will depend upon which type of silicon layer was deposited on the PV substrate from the third coater. If an n-Si layer was produced at the third coater, a p-Si layer can be produced from the fourth coater as described above. If a p-Si layer was produced at the third coater, an n-Si layer can be produced from the fourth coater as described above.
- i-Si semi-conductor thin film layers are necessary to incorporate between the n-Si and p-Si layers, as is the case for amorphous and crystalline silicon based PV modules, another coater can be positioned in between the third and fourth coaters for the deposition for producing such i-Si layers.
- a gas stream containing silane SiH 4
- Silane gas can be supplied at the rate range of 0.0 - 50.0 g/min.
- a preferred range of silane gas can be supplied at a rate range of 0.5 - 30.0 g/min.
- the i-Si layer can be passivated with hydrogen.
- hydrogen gas can be combined with the silane starting material at the following rate range: 0.0 - 20.0 g/min.
- a preferred range of hydrogen gas can be supplied at the rate range of 0.5 - 10 g/min.
- the inventors of the present invention have surprisingly found that it is possible to deposit the semi-conducting layers in vastly shorter amounts of time when compared to that of PV module manufacturers. This is attributed to performing the deposition step on-line. Typically, it may take PV module manufacturers anywhere from two to four hours to produce semi-conducting layers. Incorporation of deposition techniques for on-line production of semi-conducting metal layers eliminates the need for PV module manufacturers to produce such layers. Thus, costs incurred by the PV module manufacturers can be dramatically reduced. Moreover, the inventors have found that it is possible to deposit semi-conducting layers in a matter of minutes, if not seconds. It is preferable for the deposition steps described herein to be pyrolytic deposition steps.
- the inventors of the present invention have found that online deposition of semi-conducting layers offers the advantage of depositing the layers on a continuous ribbon of glass. This, in turn, leads to a higher quality film because the semiconducting layers do not suffer from edge effects.
- the methods of the present invention also allow for a reduced cost for starting materials and improved coating efficiency when compared to off-line sputtering processes often utilized by PV module manufacturers.
- the methods of the present invention impart features that are attractive to PV module manufacturers who wish to purchase PV substrates fabricated by the inventive methods described herein.
- Such features make the PV semi-conducting layers desirable as a "value added” product and include: 1 ) the elimination of the need for PV module manufacturers to wash and clean the PV substrate prior to silicon layer deposition; 2) the elimination of the need for PV module manufacturers to re-heat and re-cool the PV substrate for semi-conducting layer deposition; and 3) the elimination of the need for PV module manufacturers to deposit, or sputter, the semi-conducing layers. The elimination of these process steps translates into a dramatically reduced cost for PV module manufacturers.
- Fig 2 represents a p-i-n silicon single junction PV substrate.
- a mixed gas stream is directed to a heated surface of the glass ribbon substrate 10 to form the undercoating layer 20.
- a mixed gas stream is directed to a surface of the undercoating layer 20 to form TCO layer 30.
- a mixed gas stream is directed to a surface of TCO layer 30 to form n-Si layer 40.
- a mixed gas stream is directed to a surface of n-Si layer 40 to form i-Si layer 50.
- a mixed gas stream is directed to a surface of i-Si layer 50 to form p-Si layer 60.
- Fig 3 represents a p-i-n silicon double junction PV substrate.
- a mixed gas stream is directed to a heated surface of the glass ribbon substrate 10 to form the undercoating layer 20.
- a mixed gas stream is directed to a surface of the undercoating layer 20 to form TCO layer 30.
- a mixed gas stream of is directed to a surface of TCO layer 30 to form n-Si layer 40.
- a mixed gas stream is directed to a surface of n-Si layer 40 to form i-Si layer 50.
- a mixed gas stream is directed to a surface of i-Si layer 50 to form p-Si layer 60.
- a mixed gas stream is directed to a surface of p-Si layer 60 to form n-Si layer 40'.
- a mixed gas stream directed to a surface of n-Si layer 40' to form i-Si layer 50'.
- a mixed gas stream is directed to a surface of i-Si layer 50' to form p-Si layer 60'.
- Fig 4 represents a p-i-n silicon triple junction PV substrate.
- a mixed gas stream is directed to a heated surface of the glass ribbon substrate 10 to form the undercoating layer 20.
- a mixed gas stream is directed to a surface of the undercoating layer 20 to form TCO layer 30.
- a mixed gas stream is directed to a surface of TCO layer 30 to form n-Si layer 40.
- a mixed gas stream is directed to a surface of n-Si layer 40 to form i-Si layer 50.
- a mixed gas stream is directed to a surface of i-Si layer 50 to form p-Si layer 60.
- a mixed gas stream is directed to a surface of p-Si layer 60 to form n-Si layer 40'.
- a mixed gas stream is directed to a surface of n-Si layer 40' to form i-Si layer 50'.
- a mixed gas stream is directed to a surface of i-Si layer 50' to form p-Si layer 60'.
- a mixed gas stream is directed to a surface of p-Si layer 60' to form n-Si layer 40.
- a mixed gas is directed to a surface of n-Si layer 40" to form i-Si layer 50.
- a mixed gas stream is directed to a surface of i-Si layer 50" to form p-Si layer 60".
- Fig 5 represents a p-i-n silicon single junction PV substrate.
- a mixed gas stream is directed to a heated surface of the glass ribbon substrate 10 to form the undercoating layer 20.
- a mixed gas stream is directed to a surface of the undercoating layer 20 to form TCO layer 30.
- a mixed gas stream is directed to a surface of TCO layer 30 to form p-Si layer 60.
- a mixed gas stream is directed to a surface of p-Si layer 60 to form i-Si layer 50.
- a mixed gas stream is directed to a surface of i-SI layer 50 to form n-Si layer 40.
- Fig 6 represents a p-i-n silicon double junction PV substrate.
- a mixed gas stream is directed to a heated surface of the glass ribbon substrate 10 to form the undercoating layer 20.
- a mixed gas stream is directed to a surface of the undercoating layer 20 to form TCO layer 30.
- a mixed gas stream is directed to a surface of TCO layer 30 to form p-Si layer 60.
- a mixed gas stream is directed to a surface of p-Si layer 60 to form i-Si layer 50.
- a mixed gas stream is directed to a surface of i-SI layer 50 to form n-Si layer 40.
- a mixed gas stream is directed to a surface of n-Si layer 40 to form p-Si layer 60'.
- a mixed gas stream is directed to a surface of p-Si layer 60' to form i-Si layer 50'.
- a mixed gas stream is directed to a surface of i-SI layer 50' to form n-Si layer 40'.
- Fig 7 represents a p-i-n silicon triple junction PV substrate. From a first coater positioned inside a float bath, a mixed gas stream is directed to a heated surface of the glass ribbon substrate 10 to form the undercoating layer 20.
- a mixed gas stream is directed to a surface of the undercoating layer 20 to form TCO layer 30.
- a mixed gas stream is directed to a surface of TCO layer 30 to form p-Si layer 60.
- a mixed gas stream is directed to a surface of p-Si layer 60 to form i-Si layer 50.
- a mixed gas stream is directed to a surface of i-SI layer 50 to form n-Si layer 40.
- a mixed gas stream of is directed to a surface of n-Si layer 40 to form p-Si layer 60'.
- a mixed gas stream of is directed to a surface of p-Si layer 60' to form i-Si layer 50'.
- a mixed gas is directed to a surface of i-SI layer 50' to form n-Si layer 40'.
- a mixed gas stream is directed to a surface of n-Si layer 40' to form p-Si layer 60.
- a mixed gas stream is directed to a surface of p-Si layer 60" to form i-Si layer 50.
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Abstract
Description
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Priority Applications (13)
Application Number | Priority Date | Filing Date | Title |
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AU2010234478A AU2010234478A1 (en) | 2009-04-07 | 2010-04-07 | Improved silicon thin film deposition for photovoltaic device applications |
EA201101460A EA201101460A1 (en) | 2009-04-07 | 2010-04-07 | ADVANCED THIN-FILM SILICON COATING FOR APPLICATION IN PHOTO-ELECTRICAL DEVICES |
JP2012504810A JP2012523703A (en) | 2009-04-07 | 2010-04-07 | Improved silicon thin film deposition for photovoltaic device applications |
BRPI1015955A BRPI1015955A2 (en) | 2009-04-07 | 2010-04-07 | Enhanced Silicon Thin Layer Deposition for Photovoltaic Device Applications |
SG2011067840A SG174479A1 (en) | 2009-04-07 | 2010-04-07 | Improved silicon thin film deposition for photovoltaic device applications |
MX2011010562A MX2011010562A (en) | 2009-04-07 | 2010-04-07 | Improved silicon thin film deposition for photovoltaic device applications. |
CN2010800207149A CN102422428A (en) | 2009-04-07 | 2010-04-07 | Improved silicon thin film deposition for photovoltaic device applications |
CA2758074A CA2758074A1 (en) | 2009-04-07 | 2010-04-07 | Improved silicon thin film deposition for photovoltaic device applications |
MA34320A MA33252B1 (en) | 2009-04-07 | 2010-04-07 | Enhanced silicon tape store for use in photovoltaic devices |
EP10762350A EP2417633A4 (en) | 2009-04-07 | 2010-04-07 | Improved silicon thin film deposition for photovoltaic device applications |
TN2011000479A TN2011000479A1 (en) | 2009-04-07 | 2011-09-21 | Improved silicon thin film deposition for photovoltaic device applications |
IL215547A IL215547A0 (en) | 2009-04-07 | 2011-10-05 | Improved silicon thin film deposition for photovoltaic device applications |
ZA2011/08120A ZA201108120B (en) | 2009-04-07 | 2011-11-04 | Improved silicon thin film deposition for photovoltaic device applications |
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US (1) | US8273595B2 (en) |
EP (1) | EP2417633A4 (en) |
JP (1) | JP2012523703A (en) |
KR (1) | KR20120018146A (en) |
CN (1) | CN102422428A (en) |
AR (1) | AR076644A1 (en) |
AU (1) | AU2010234478A1 (en) |
BR (1) | BRPI1015955A2 (en) |
CA (1) | CA2758074A1 (en) |
CL (1) | CL2011002489A1 (en) |
EA (1) | EA201101460A1 (en) |
IL (1) | IL215547A0 (en) |
MA (1) | MA33252B1 (en) |
MX (1) | MX2011010562A (en) |
SG (1) | SG174479A1 (en) |
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US8148192B2 (en) * | 2010-02-22 | 2012-04-03 | James P Campbell | Transparent solar cell method of fabrication via float glass process |
US8168467B2 (en) * | 2010-03-17 | 2012-05-01 | James P Campbell | Solar cell method of fabrication via float glass process |
US8987583B2 (en) | 2012-12-01 | 2015-03-24 | Ann B Campbell | Variable optical density solar collector |
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US4907052A (en) * | 1984-10-11 | 1990-03-06 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Semiconductor tandem solar cells with metal silicide barrier |
US5764415A (en) * | 1994-01-10 | 1998-06-09 | Pilkington Glass Limited | Coatings on glass |
US20060134322A1 (en) * | 2004-12-20 | 2006-06-22 | Harris Caroline S | Substrates coated with a polycrystalline functional coating |
US20070215205A1 (en) * | 2006-03-13 | 2007-09-20 | Guardian Industries Corp. | Solar cell using low iron high transmission glass and corresponding method |
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EP1471541B1 (en) * | 2002-01-28 | 2016-10-19 | Nippon Sheet Glass Company, Limited | Glass substrate coated with a transparent conductive film and photoelectric conversion device including said glass substrate |
JP5068946B2 (en) * | 2003-05-13 | 2012-11-07 | 旭硝子株式会社 | Transparent conductive substrate for solar cell and method for producing the same |
US7743630B2 (en) * | 2005-05-05 | 2010-06-29 | Guardian Industries Corp. | Method of making float glass with transparent conductive oxide (TCO) film integrally formed on tin bath side of glass and corresponding product |
-
2010
- 2010-04-07 CA CA2758074A patent/CA2758074A1/en not_active Abandoned
- 2010-04-07 US US12/755,712 patent/US8273595B2/en not_active Expired - Fee Related
- 2010-04-07 TW TW099110855A patent/TW201041819A/en unknown
- 2010-04-07 MX MX2011010562A patent/MX2011010562A/en active IP Right Grant
- 2010-04-07 WO PCT/US2010/030199 patent/WO2010118105A1/en active Application Filing
- 2010-04-07 AR ARP100101168A patent/AR076644A1/en not_active Application Discontinuation
- 2010-04-07 JP JP2012504810A patent/JP2012523703A/en not_active Withdrawn
- 2010-04-07 KR KR1020117026406A patent/KR20120018146A/en not_active Application Discontinuation
- 2010-04-07 EP EP10762350A patent/EP2417633A4/en not_active Withdrawn
- 2010-04-07 SG SG2011067840A patent/SG174479A1/en unknown
- 2010-04-07 EA EA201101460A patent/EA201101460A1/en unknown
- 2010-04-07 BR BRPI1015955A patent/BRPI1015955A2/en not_active IP Right Cessation
- 2010-04-07 AU AU2010234478A patent/AU2010234478A1/en not_active Abandoned
- 2010-04-07 CN CN2010800207149A patent/CN102422428A/en active Pending
- 2010-04-07 MA MA34320A patent/MA33252B1/en unknown
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2011
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Patent Citations (4)
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US4907052A (en) * | 1984-10-11 | 1990-03-06 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Semiconductor tandem solar cells with metal silicide barrier |
US5764415A (en) * | 1994-01-10 | 1998-06-09 | Pilkington Glass Limited | Coatings on glass |
US20060134322A1 (en) * | 2004-12-20 | 2006-06-22 | Harris Caroline S | Substrates coated with a polycrystalline functional coating |
US20070215205A1 (en) * | 2006-03-13 | 2007-09-20 | Guardian Industries Corp. | Solar cell using low iron high transmission glass and corresponding method |
Non-Patent Citations (1)
Title |
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See also references of EP2417633A4 * |
Also Published As
Publication number | Publication date |
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CL2011002489A1 (en) | 2012-04-09 |
BRPI1015955A2 (en) | 2016-04-26 |
MX2011010562A (en) | 2012-01-30 |
EP2417633A4 (en) | 2012-10-31 |
EA201101460A1 (en) | 2012-05-30 |
TW201041819A (en) | 2010-12-01 |
EP2417633A1 (en) | 2012-02-15 |
AR076644A1 (en) | 2011-06-29 |
CN102422428A (en) | 2012-04-18 |
JP2012523703A (en) | 2012-10-04 |
SG174479A1 (en) | 2011-10-28 |
AU2010234478A1 (en) | 2011-11-24 |
IL215547A0 (en) | 2011-12-29 |
US20100255627A1 (en) | 2010-10-07 |
CA2758074A1 (en) | 2010-10-14 |
TN2011000479A1 (en) | 2013-03-27 |
KR20120018146A (en) | 2012-02-29 |
US8273595B2 (en) | 2012-09-25 |
ZA201108120B (en) | 2012-07-25 |
MA33252B1 (en) | 2012-05-02 |
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