WO2008143721A3 - Photovoltaic cell with reduced hot-carrier cooling - Google Patents

Photovoltaic cell with reduced hot-carrier cooling Download PDF

Info

Publication number
WO2008143721A3
WO2008143721A3 PCT/US2008/001769 US2008001769W WO2008143721A3 WO 2008143721 A3 WO2008143721 A3 WO 2008143721A3 US 2008001769 W US2008001769 W US 2008001769W WO 2008143721 A3 WO2008143721 A3 WO 2008143721A3
Authority
WO
WIPO (PCT)
Prior art keywords
photovoltaic cell
reduced hot
carrier cooling
electrode
contact
Prior art date
Application number
PCT/US2008/001769
Other languages
French (fr)
Other versions
WO2008143721A2 (en
Inventor
Krzysztof Kempa
Original Assignee
Solasta Inc
Krzysztof Kempa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solasta Inc, Krzysztof Kempa filed Critical Solasta Inc
Priority to EP08794287A priority Critical patent/EP2115784A2/en
Priority to JP2009549134A priority patent/JP2010518623A/en
Publication of WO2008143721A2 publication Critical patent/WO2008143721A2/en
Publication of WO2008143721A3 publication Critical patent/WO2008143721A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H10K85/225—Carbon nanotubes comprising substituents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

A photovoltaic cell includes a first electrode, a first nanoparticle layer located in contact with the first electrode, a second electrode, a second nanoparticle layer located in contact with the second electrode, and a thin film photovoltaic material located between and in contact with the first and the second nanoparticle layers.
PCT/US2008/001769 2007-02-12 2008-02-11 Photovoltaic cell with reduced hot-carrier cooling WO2008143721A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08794287A EP2115784A2 (en) 2007-02-12 2008-02-11 Photovoltaic cell with reduced hot-carrier cooling
JP2009549134A JP2010518623A (en) 2007-02-12 2008-02-11 Photocell with reduced hot carrier cooling

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US90070907P 2007-02-12 2007-02-12
US60/900,709 2007-02-12

Publications (2)

Publication Number Publication Date
WO2008143721A2 WO2008143721A2 (en) 2008-11-27
WO2008143721A3 true WO2008143721A3 (en) 2009-05-14

Family

ID=39714509

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/001769 WO2008143721A2 (en) 2007-02-12 2008-02-11 Photovoltaic cell with reduced hot-carrier cooling

Country Status (7)

Country Link
US (1) US20080202581A1 (en)
EP (1) EP2115784A2 (en)
JP (1) JP2010518623A (en)
KR (1) KR20090120474A (en)
CN (1) CN101663764A (en)
TW (1) TW200849613A (en)
WO (1) WO2008143721A2 (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2245673A4 (en) * 2008-02-03 2016-09-21 Nliten Energy Corp Thin-film photovoltaic devices and related manufacturing methods
SE533090C2 (en) * 2008-07-09 2010-06-22 Qunano Ab Nanostructured LED
KR20100073757A (en) * 2008-12-23 2010-07-01 삼성전자주식회사 Light emitting device using micro-rod and method of manufacturing the light emitting device
KR101100109B1 (en) * 2009-06-12 2011-12-29 한국철강 주식회사 Method for Manufacturing Photovoltaic Device
KR101106480B1 (en) * 2009-06-12 2012-01-20 한국철강 주식회사 Method for Manufacturing Photovoltaic Device
JP5538530B2 (en) * 2009-07-03 2014-07-02 ニューサウス イノヴェーションズ ピーティワイ リミテッド Hot carrier energy conversion structure and manufacturing method thereof
KR101072472B1 (en) * 2009-07-03 2011-10-11 한국철강 주식회사 Method for Manufacturing Photovoltaic Device
EP2483926B1 (en) 2009-09-29 2019-02-06 Research Triangle Institute Quantum dot-fullerene junction optoelectronic devices
US9349970B2 (en) 2009-09-29 2016-05-24 Research Triangle Institute Quantum dot-fullerene junction based photodetectors
US9054262B2 (en) 2009-09-29 2015-06-09 Research Triangle Institute Integrated optical upconversion devices and related methods
WO2011066439A1 (en) * 2009-11-25 2011-06-03 The Trustees Of Boston College Nanoscopically thin photovoltaic junction solar cells
KR101417882B1 (en) * 2009-11-26 2014-07-09 디아이씨 가부시끼가이샤 Material for photoelectric conversion element, and photoelectric conversion element
US9202954B2 (en) * 2010-03-03 2015-12-01 Q1 Nanosystems Corporation Nanostructure and photovoltaic cell implementing same
KR101745616B1 (en) * 2010-06-07 2017-06-12 삼성전자주식회사 Nano structure comprising discontinuous areas and a thermoelectric device comprising the same
US8431817B2 (en) * 2010-06-08 2013-04-30 Sundiode Inc. Multi-junction solar cell having sidewall bi-layer electrical interconnect
US8659037B2 (en) 2010-06-08 2014-02-25 Sundiode Inc. Nanostructure optoelectronic device with independently controllable junctions
US8476637B2 (en) 2010-06-08 2013-07-02 Sundiode Inc. Nanostructure optoelectronic device having sidewall electrical contact
WO2012175902A1 (en) * 2011-06-23 2012-12-27 Mfn Technology Limited Method of making a structure comprising coating steps and corresponding structure and devices
US20130092222A1 (en) * 2011-10-14 2013-04-18 Nanograss Solar Llc Nanostructured Solar Cells Utilizing Charge Plasma
US20130112243A1 (en) * 2011-11-04 2013-05-09 C/O Q1 Nanosystems (Dba Bloo Solar) Photovoltaic microstructure and photovoltaic device implementing same
US20130112236A1 (en) * 2011-11-04 2013-05-09 C/O Q1 Nanosystems (Dba Bloo Solar) Photovoltaic microstructure and photovoltaic device implementing same
GB201301683D0 (en) 2013-01-30 2013-03-13 Big Solar Ltd Method of creating non-conductive delineations with a selective coating technology on a structured surface
DE102013221758B4 (en) * 2013-10-25 2019-05-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. DEVICES FOR TRANSMITTING AND / OR RECEIVING ELECTROMAGNETIC RADIATION AND METHOD FOR PROVIDING THEM
GB2549133B (en) 2016-04-07 2020-02-19 Power Roll Ltd Gap between semiconductors
GB2549134B (en) 2016-04-07 2020-02-12 Power Roll Ltd Asymmetric groove
GB2549132A (en) 2016-04-07 2017-10-11 Big Solar Ltd Aperture in a semiconductor
GB201617276D0 (en) 2016-10-11 2016-11-23 Big Solar Limited Energy storage
CN108963003B (en) * 2017-05-24 2020-06-09 清华大学 Solar cell
CN109065722B (en) * 2018-07-12 2020-12-01 西南大学 Solar cell based on hot carriers and preparation method thereof
CN111261737B (en) * 2020-01-21 2022-08-12 广东工业大学 SnSe/Bi 2 Se 3 Nanosheet heterojunction and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040084080A1 (en) * 2002-06-22 2004-05-06 Nanosolar, Inc. Optoelectronic device and fabrication method
US20050064185A1 (en) * 2003-08-04 2005-03-24 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom
KR20050066064A (en) * 2003-12-26 2005-06-30 한국전자통신연구원 Transparent solar module and method for manufacturing the same
US20060107997A1 (en) * 2004-11-22 2006-05-25 Fujikura Ltd. Electrode, photoelectric conversion element, and dye-sensitized solar cell

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3312870A (en) * 1964-03-13 1967-04-04 Hughes Aircraft Co Electrical transmission system
US3711848A (en) * 1971-02-10 1973-01-16 I D Eng Inc Method of and apparatus for the detection of stolen articles
US4019924A (en) * 1975-11-14 1977-04-26 Mobil Tyco Solar Energy Corporation Solar cell mounting and interconnecting assembly
US4445050A (en) * 1981-12-15 1984-04-24 Marks Alvin M Device for conversion of light power to electric power
US4197142A (en) * 1979-03-07 1980-04-08 Canadian Patents & Development Ltd. Photochemical device for conversion of visible light to electricity
US4445080A (en) * 1981-11-25 1984-04-24 The Charles Stark Draper Laboratory, Inc. System for indirectly sensing flux in an induction motor
DE3700792C2 (en) * 1987-01-13 1996-08-22 Hoegl Helmut Photovoltaic solar cell arrangement and method for its production
US5009958A (en) * 1987-03-06 1991-04-23 Matsushita Electric Industrial Co., Ltd. Functional devices comprising a charge transfer complex layer
US5185208A (en) * 1987-03-06 1993-02-09 Matsushita Electric Industrial Co., Ltd. Functional devices comprising a charge transfer complex layer
CH674596A5 (en) * 1988-02-12 1990-06-15 Sulzer Ag
US4803688A (en) * 1988-03-28 1989-02-07 Lawandy Nabil M Ordered colloidal suspension optical devices
JP2752687B2 (en) * 1989-03-29 1998-05-18 三菱電機株式会社 Optical devices based on heteromolecular junctions
US5105305A (en) * 1991-01-10 1992-04-14 At&T Bell Laboratories Near-field scanning optical microscope using a fluorescent probe
JP2968080B2 (en) * 1991-04-30 1999-10-25 ジェイエスアール株式会社 High resolution optical microscope and mask for creating irradiation spot light
EP0532969B1 (en) * 1991-09-18 1997-12-17 Fujitsu Limited Process for fabricating an optical device for generating a second harmonic optical beam
US5493628A (en) * 1991-10-17 1996-02-20 Lawandy; Nabil M. High density optically encoded information storage using second harmonic generation in silicate glasses
US5253258A (en) * 1991-10-17 1993-10-12 Intellectual Property Development Associates Of Connecticut, Inc. Optically encoded phase matched second harmonic generation device and self frequency doubling laser material using semiconductor microcrystallite doped glasses
FR2694451B1 (en) * 1992-07-29 1994-09-30 Asulab Sa Photovoltaic cell.
EP0641029A3 (en) * 1993-08-27 1998-01-07 Twin Solar-Technik Entwicklungs-GmbH Element for a photovoltaic solar cell and process of fabrication as well as its arrangement in a solar cell
US5448582A (en) * 1994-03-18 1995-09-05 Brown University Research Foundation Optical sources having a strongly scattering gain medium providing laser-like action
JP2692591B2 (en) * 1994-06-30 1997-12-17 株式会社日立製作所 Optical memory device and optical circuit using the same
US5489774A (en) * 1994-09-20 1996-02-06 The Board Of Trustees Of The Leland Stanford University Combined atomic force and near field scanning optical microscope with photosensitive cantilever
US5604635A (en) * 1995-03-08 1997-02-18 Brown University Research Foundation Microlenses and other optical elements fabricated by laser heating of semiconductor doped and other absorbing glasses
KR100294057B1 (en) * 1995-08-22 2001-09-17 모리시타 요이찌 Semiconductor device comprising a silicon structure layer, method and method of manufacturing the layer and solar cell using the layer
US6183714B1 (en) * 1995-09-08 2001-02-06 Rice University Method of making ropes of single-wall carbon nanotubes
US5872422A (en) * 1995-12-20 1999-02-16 Advanced Technology Materials, Inc. Carbon fiber-based field emission devices
US5897945A (en) * 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
JP3290586B2 (en) * 1996-03-13 2002-06-10 セイコーインスツルメンツ株式会社 Scanning near-field optical microscope
US5888371A (en) * 1996-04-10 1999-03-30 The Board Of Trustees Of The Leland Stanford Jr. University Method of fabricating an aperture for a near field scanning optical microscope
CA2255599C (en) * 1996-04-25 2006-09-05 Bioarray Solutions, Llc Light-controlled electrokinetic assembly of particles near surfaces
EP0927331B1 (en) * 1996-08-08 2004-03-31 William Marsh Rice University Macroscopically manipulable nanoscale devices made from nanotube assemblies
US5747861A (en) * 1997-01-03 1998-05-05 Lucent Technologies Inc. Wavelength discriminating photodiode for 1.3/1.55 μm lightwave systems
JP3639684B2 (en) * 1997-01-13 2005-04-20 キヤノン株式会社 Evanescent wave detection microprobe and method for manufacturing the same, probe including the microprobe and method for manufacturing the same, evanescent wave detection device including the microprobe, near-field scanning optical microscope, and information reproducing device
US6700550B2 (en) * 1997-01-16 2004-03-02 Ambit Corporation Optical antenna array for harmonic generation, mixing and signal amplification
US6038060A (en) * 1997-01-16 2000-03-14 Crowley; Robert Joseph Optical antenna array for harmonic generation, mixing and signal amplification
US6683783B1 (en) * 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
JP3249419B2 (en) * 1997-03-12 2002-01-21 セイコーインスツルメンツ株式会社 Scanning near-field optical microscope
US5973316A (en) * 1997-07-08 1999-10-26 Nec Research Institute, Inc. Sub-wavelength aperture arrays with enhanced light transmission
DE69724159T2 (en) * 1997-09-19 2004-05-06 International Business Machines Corp. OPTICAL LITHOGRAPHY WITH EXTREMELY HIGH RESOLUTION
US6043496A (en) * 1998-03-14 2000-03-28 Lucent Technologies Inc. Method of linewidth monitoring for nanolithography
US6233045B1 (en) * 1998-05-18 2001-05-15 Light Works Llc Self-mixing sensor apparatus and method
US6538194B1 (en) * 1998-05-29 2003-03-25 Catalysts & Chemicals Industries Co., Ltd. Photoelectric cell and process for producing metal oxide semiconductor film for use in photoelectric cell
US6203864B1 (en) * 1998-06-08 2001-03-20 Nec Corporation Method of forming a heterojunction of a carbon nanotube and a different material, method of working a filament of a nanotube
US6212292B1 (en) * 1998-07-08 2001-04-03 California Institute Of Technology Creating an image of an object with an optical microscope
US6346189B1 (en) * 1998-08-14 2002-02-12 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube structures made using catalyst islands
AU774443B2 (en) * 1999-06-30 2004-06-24 Jgc Catalysts And Chemicals Ltd. Photoelectric cell
US6515274B1 (en) * 1999-07-20 2003-02-04 Martin Moskovits Near-field scanning optical microscope with a high Q-factor piezoelectric sensing element
AU772539B2 (en) * 1999-07-29 2004-04-29 Kaneka Corporation Method for cleaning photovoltaic module and cleaning apparatus
FR2799014B1 (en) * 1999-09-27 2001-12-07 Univ Paris 13 PROCESS AND INSTALLATION OF ATOMIC INTERFEROMETRY NANOLITHOGRAPHY
IL134631A0 (en) * 2000-02-20 2001-04-30 Yeda Res & Dev Constructive nanolithography
SE0103740D0 (en) * 2001-11-08 2001-11-08 Forskarpatent I Vaest Ab Photovoltaic element and production methods
US7291284B2 (en) * 2000-05-26 2007-11-06 Northwestern University Fabrication of sub-50 nm solid-state nanostructures based on nanolithography
US20020031602A1 (en) * 2000-06-20 2002-03-14 Chi Zhang Thermal treatment of solution-processed organic electroactive layer in organic electronic device
AU2002224348A1 (en) * 2000-10-04 2002-04-15 The Board Of Trustees Of The University Of Arkansas Synthesis of colloidal nanocrystals
US6365466B1 (en) * 2001-01-31 2002-04-02 Advanced Micro Devices, Inc. Dual gate process using self-assembled molecular layer
TW554388B (en) * 2001-03-30 2003-09-21 Univ California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US6642129B2 (en) * 2001-07-26 2003-11-04 The Board Of Trustees Of The University Of Illinois Parallel, individually addressable probes for nanolithography
US6869545B2 (en) * 2001-07-30 2005-03-22 The Board Of Trustees Of The University Of Arkansas Colloidal nanocrystals with high photoluminescence quantum yields and methods of preparing the same
JP4051988B2 (en) * 2002-04-09 2008-02-27 富士ゼロックス株式会社 Photoelectric conversion element and photoelectric conversion device
US7485799B2 (en) * 2002-05-07 2009-02-03 John Michael Guerra Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US6852920B2 (en) * 2002-06-22 2005-02-08 Nanosolar, Inc. Nano-architected/assembled solar electricity cell
US7335908B2 (en) * 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US7013708B1 (en) * 2002-07-11 2006-03-21 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube sensors
US7005378B2 (en) * 2002-08-26 2006-02-28 Nanoink, Inc. Processes for fabricating conductive patterns using nanolithography as a patterning tool
AU2003279708A1 (en) * 2002-09-05 2004-03-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US20040077156A1 (en) * 2002-10-18 2004-04-22 Loucas Tsakalakos Methods of defect reduction in wide bandgap thin films using nanolithography
US7019209B2 (en) * 2002-12-11 2006-03-28 General Electric Company Structured dye sensitized solar cell
US6849798B2 (en) * 2002-12-17 2005-02-01 General Electric Company Photovoltaic cell using stable Cu2O nanocrystals and conductive polymers
US6985223B2 (en) * 2003-03-07 2006-01-10 Purdue Research Foundation Raman imaging and sensing apparatus employing nanoantennas
US7511217B1 (en) * 2003-04-19 2009-03-31 Nanosolar, Inc. Inter facial architecture for nanostructured optoelectronic devices
US6897158B2 (en) * 2003-09-22 2005-05-24 Hewlett-Packard Development Company, L.P. Process for making angled features for nanolithography and nanoimprinting
US8013359B2 (en) * 2003-12-31 2011-09-06 John W. Pettit Optically controlled electrical switching device based on wide bandgap semiconductors
US7053351B2 (en) * 2004-03-30 2006-05-30 Matsushita Electric Industrial, Co., Ltd Near-field scanning optical microscope for laser machining of micro- and nano- structures
US20060024438A1 (en) * 2004-07-27 2006-02-02 The Regents Of The University Of California, A California Corporation Radially layered nanocables and method of fabrication
US7323657B2 (en) * 2004-08-03 2008-01-29 Matsushita Electric Industrial Co., Ltd. Precision machining method using a near-field scanning optical microscope
US7541062B2 (en) * 2004-08-18 2009-06-02 The United States Of America As Represented By The Secretary Of The Navy Thermal control of deposition in dip pen nanolithography
US7151244B2 (en) * 2004-09-02 2006-12-19 Matsushita Electric Industrial Co., Ltd Method and apparatus for calibration of near-field scanning optical microscope tips for laser machining
US7035498B2 (en) * 2004-09-28 2006-04-25 General Electric Company Ultra-fast all-optical switch array
US20060070653A1 (en) * 2004-10-04 2006-04-06 Palo Alto Research Center Incorporated Nanostructured composite photovoltaic cell
US7208793B2 (en) * 2004-11-23 2007-04-24 Micron Technology, Inc. Scalable integrated logic and non-volatile memory
US20060110618A1 (en) * 2004-11-24 2006-05-25 General Electric Company Electrodes for photovoltaic cells and methods for manufacture thereof
US7049999B1 (en) * 2005-02-16 2006-05-23 Applied Concepts, Inc. Modulation circuit for a vehicular traffic surveillance Doppler radar system
US7394016B2 (en) * 2005-10-11 2008-07-01 Solyndra, Inc. Bifacial elongated solar cell devices with internal reflectors
WO2007086903A2 (en) * 2005-08-24 2007-08-02 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanocoax structures
WO2007025023A2 (en) * 2005-08-24 2007-03-01 The Trustees Of Boston College Apparatus and methods for optical switching using nanoscale optics
US8017860B2 (en) * 2006-05-15 2011-09-13 Stion Corporation Method and structure for thin film photovoltaic materials using bulk semiconductor materials
US20080006319A1 (en) * 2006-06-05 2008-01-10 Martin Bettge Photovoltaic and photosensing devices based on arrays of aligned nanostructures
US8716594B2 (en) * 2006-09-26 2014-05-06 Banpil Photonics, Inc. High efficiency photovoltaic cells with self concentrating effect
EP2191510A1 (en) * 2007-09-18 2010-06-02 Reflexite Corporation Solar arrays with geometric-shaped, three-dimensional structures and methods thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040084080A1 (en) * 2002-06-22 2004-05-06 Nanosolar, Inc. Optoelectronic device and fabrication method
US20050064185A1 (en) * 2003-08-04 2005-03-24 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom
KR20050066064A (en) * 2003-12-26 2005-06-30 한국전자통신연구원 Transparent solar module and method for manufacturing the same
US20060107997A1 (en) * 2004-11-22 2006-05-25 Fujikura Ltd. Electrode, photoelectric conversion element, and dye-sensitized solar cell

Also Published As

Publication number Publication date
WO2008143721A2 (en) 2008-11-27
US20080202581A1 (en) 2008-08-28
JP2010518623A (en) 2010-05-27
CN101663764A (en) 2010-03-03
EP2115784A2 (en) 2009-11-11
KR20090120474A (en) 2009-11-24
TW200849613A (en) 2008-12-16

Similar Documents

Publication Publication Date Title
WO2008143721A3 (en) Photovoltaic cell with reduced hot-carrier cooling
WO2009045293A3 (en) Photovoltaic devices including an interfacial layer
WO2007065039A3 (en) Nanocrystal solar cells processed from solution
WO2008067181A3 (en) Photovoltaic device including a metal stack
WO2009156640A3 (en) Photovoltaic cell, and substrate for same
WO2011032135A3 (en) Light-extraction graphics film
WO2008058119A3 (en) Photovoltaic devices including nitrogen-containing metal contact
WO2009064863A3 (en) Multilayer terionomer encapsulant layers and solar cell laminates comprising the same
WO2007035357A3 (en) Metal and electronically conductive polymer transfer
WO2009080931A8 (en) Improvements to elements capable of collecting light
CA2627992C (en) Organic photovoltaic cells utilizing ultrathin sensitizing layer
WO2007095061A3 (en) Device including semiconductor nanocrystals and a layer including a doped organic material and methods
WO2009094663A3 (en) Photovoltaic devices having metal oxide electron-transport layers
WO2007078785A3 (en) Gas scrubber and method related thereto
MX2010004731A (en) Photovoltaic devices including doped semiconductor films.
WO2008036769A3 (en) Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices
WO2006101967A3 (en) Membraneless electrochemical cell and microfluidic device without ph constraint
WO2008108838A3 (en) Microfluidic devices and methods for fabricating the same
WO2009134280A3 (en) Thermal interface material with thin transfer film or metallization
TW200707643A (en) Semiconductor device having through electrode and method of manufacturing the same
WO2013032790A3 (en) Nanostructured transparent conducting oxide electrochromic device
EP2107614A3 (en) Thin-film photovoltaic cell, thin-film photovoltaic module and method of manufacturing thin-film photovoltaic cell
EP2172988A3 (en) Organic solar cell device
TW200708587A (en) Anisotropic conductive film and method for producing the same
WO2008104301A3 (en) Hybrid organic solar cells with photoactive semiconductor nanoparticles enclosed in surface modifiers

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880004753.2

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08794287

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2009549134

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 1020097018435

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2008794287

Country of ref document: EP