WO2008114822A1 - シリコンインゴットの製造方法および製造装置 - Google Patents

シリコンインゴットの製造方法および製造装置 Download PDF

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Publication number
WO2008114822A1
WO2008114822A1 PCT/JP2008/055098 JP2008055098W WO2008114822A1 WO 2008114822 A1 WO2008114822 A1 WO 2008114822A1 JP 2008055098 W JP2008055098 W JP 2008055098W WO 2008114822 A1 WO2008114822 A1 WO 2008114822A1
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WO
WIPO (PCT)
Prior art keywords
silicon
manufacturing
silicon ingot
alloy melt
reduced
Prior art date
Application number
PCT/JP2008/055098
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English (en)
French (fr)
Inventor
Kenichi Nishio
Teruo Kuroda
Kazuku Morita
Original Assignee
Mnk-Sog Silicon, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mnk-Sog Silicon, Inc. filed Critical Mnk-Sog Silicon, Inc.
Priority to JP2009505240A priority Critical patent/JP4337954B2/ja
Priority to EP08722473A priority patent/EP2138610A1/en
Priority to US12/532,019 priority patent/US20100143231A1/en
Priority to CA002681353A priority patent/CA2681353A1/en
Priority to CN200880015497A priority patent/CN101680111A/zh
Publication of WO2008114822A1 publication Critical patent/WO2008114822A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)

Abstract

【課題】製造工程を削減し、しかも必要な電力も削減できる新規なシリコンインゴットの製造方法及び装置を提供する。 【解決手段】シリコンとの共晶反応を持ち、シリコン合金となったときの共晶点がシリコンの融点より低い元素と、金属シリコンとを、坩堝内で加熱融解し合金融液を生成する工程と、前記合金融液に対し共晶反応を利用してシリコンを低温凝固精製すると共に、前記合金融液より引き上げ法によりシリコンインゴットを生成する工程とを含むことを特徴とするシリコンインゴットの製造方法。
PCT/JP2008/055098 2007-03-19 2008-03-19 シリコンインゴットの製造方法および製造装置 WO2008114822A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009505240A JP4337954B2 (ja) 2007-03-19 2008-03-19 シリコンインゴットの製造方法および製造装置
EP08722473A EP2138610A1 (en) 2007-03-19 2008-03-19 Method and apparatus for manufacturing silicon ingot
US12/532,019 US20100143231A1 (en) 2007-03-19 2008-03-19 Method and Apparatus for Manufacturing Silicon Ingot
CA002681353A CA2681353A1 (en) 2007-03-19 2008-03-19 Method and apparatus for manufacturing silicon ingot
CN200880015497A CN101680111A (zh) 2007-03-19 2008-03-19 硅锭的制造方法及制造装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-069741 2007-03-19
JP2007069741 2007-03-19

Publications (1)

Publication Number Publication Date
WO2008114822A1 true WO2008114822A1 (ja) 2008-09-25

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PCT/JP2008/055098 WO2008114822A1 (ja) 2007-03-19 2008-03-19 シリコンインゴットの製造方法および製造装置

Country Status (7)

Country Link
US (1) US20100143231A1 (ja)
EP (1) EP2138610A1 (ja)
JP (2) JP4337954B2 (ja)
KR (1) KR20100015652A (ja)
CN (1) CN101680111A (ja)
CA (1) CA2681353A1 (ja)
WO (1) WO2008114822A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101798705A (zh) * 2010-03-12 2010-08-11 上海太阳能电池研究与发展中心 一种从低温熔体中连续拉晶提纯多晶硅的方法及专用装置
CN101812727A (zh) * 2010-04-13 2010-08-25 上海太阳能电池研究与发展中心 一种直流电场下定向凝固提纯多晶硅的方法
WO2013111314A1 (ja) * 2012-01-27 2013-08-01 Kaneko Kyojiro シリコン純化法
JP2016130200A (ja) * 2015-01-14 2016-07-21 株式会社Sumco シリコン単結晶の製造方法

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NO329987B1 (no) 2009-02-26 2011-01-31 Harsharn Tathgar Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller
JP5483591B2 (ja) * 2010-10-08 2014-05-07 日鉄住金ファインテック株式会社 単結晶引上装置および坩堝支持装置
KR101690490B1 (ko) * 2010-10-21 2016-12-28 에스케이이노베이션 주식회사 탄화규소 단결정의 제조방법 및 장치
CN102749128B (zh) * 2011-04-19 2014-08-27 蒂雅克股份有限公司 测压元件单元
JP5679120B2 (ja) * 2011-04-19 2015-03-04 ティアック株式会社 ロードセルユニット
CN102311121A (zh) * 2011-08-29 2012-01-11 大连理工大学 一种合金化分凝提纯工业硅的方法
KR101317198B1 (ko) * 2011-10-24 2013-10-15 한국생산기술연구원 성장로 감시 장치
TWI627131B (zh) * 2012-02-01 2018-06-21 美商希利柯爾材料股份有限公司 矽純化之模具及方法
CN102605424A (zh) * 2012-03-06 2012-07-25 浙江宏业新能源有限公司 多晶硅铸锭炉控制***及控制方法
CN102786060B (zh) * 2012-08-15 2016-08-17 大连理工大学 一种增强合金化分凝提纯多晶硅的方法
CN104635805B (zh) * 2014-12-24 2017-05-17 湖南顶立科技有限公司 一种温度控制***
FR3052773B1 (fr) * 2016-06-15 2020-10-30 Snecma Procede de fabrication d'une piece de turbomachine
CN108018602A (zh) * 2016-11-03 2018-05-11 上海新昇半导体科技有限公司 自动进料***及进料方法
CN108706590A (zh) * 2018-07-07 2018-10-26 孟静 太阳能级多晶硅制备方法
CN108796606B (zh) * 2018-07-07 2020-11-03 玉环市几偶孵化器有限公司 太阳能级多晶硅制备装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58185496A (ja) * 1982-04-20 1983-10-29 Toshiba Ceramics Co Ltd 単結晶シリコン引上げ用窒化珪素製治具の製造方法
JPH02267195A (ja) * 1989-04-05 1990-10-31 Nippon Steel Corp 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JPH05208892A (ja) * 1992-01-29 1993-08-20 Shin Etsu Handotai Co Ltd 単結晶シリコン棒の製造方法
JPH07133186A (ja) * 1993-11-01 1995-05-23 Komatsu Electron Metals Co Ltd シリコン単結晶の製造装置および製造方法
JPH09263484A (ja) * 1996-03-28 1997-10-07 Sumitomo Sitix Corp 単結晶引き上げ方法
JPH10273313A (ja) 1997-03-28 1998-10-13 Kawasaki Steel Corp 多結晶シリコン鋳塊の製造方法
JP2002047095A (ja) 2000-07-31 2002-02-12 Shin Etsu Handotai Co Ltd Ｇａドープシリコン単結晶の製造方法およびＧａドープシリコン単結晶、並びにこれから作製されたシリコン単結晶太陽電池
JP3325900B2 (ja) 1996-10-14 2002-09-17 川崎製鉄株式会社 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法
JP2003277040A (ja) 2002-03-19 2003-10-02 Sharp Corp シリコンの精製方法および該方法により精製したシリコンを用いて製造する太陽電池
JP2003286024A (ja) 2002-03-27 2003-10-07 Mitsubishi Materials Corp 一方向凝固シリコンインゴット及びこの製造方法並びにシリコン板及び太陽電池用基板及びスパッタリング用ターゲット素材
JP2004067452A (ja) * 2002-08-07 2004-03-04 Shin Etsu Handotai Co Ltd 単結晶の引き上げ条件の設計方法
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JPS58185496A (ja) * 1982-04-20 1983-10-29 Toshiba Ceramics Co Ltd 単結晶シリコン引上げ用窒化珪素製治具の製造方法
JPH02267195A (ja) * 1989-04-05 1990-10-31 Nippon Steel Corp 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JPH05208892A (ja) * 1992-01-29 1993-08-20 Shin Etsu Handotai Co Ltd 単結晶シリコン棒の製造方法
JPH07133186A (ja) * 1993-11-01 1995-05-23 Komatsu Electron Metals Co Ltd シリコン単結晶の製造装置および製造方法
JPH09263484A (ja) * 1996-03-28 1997-10-07 Sumitomo Sitix Corp 単結晶引き上げ方法
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JPH10273313A (ja) 1997-03-28 1998-10-13 Kawasaki Steel Corp 多結晶シリコン鋳塊の製造方法
JP2002047095A (ja) 2000-07-31 2002-02-12 Shin Etsu Handotai Co Ltd Ｇａドープシリコン単結晶の製造方法およびＧａドープシリコン単結晶、並びにこれから作製されたシリコン単結晶太陽電池
JP2003277040A (ja) 2002-03-19 2003-10-02 Sharp Corp シリコンの精製方法および該方法により精製したシリコンを用いて製造する太陽電池
JP2003286024A (ja) 2002-03-27 2003-10-07 Mitsubishi Materials Corp 一方向凝固シリコンインゴット及びこの製造方法並びにシリコン板及び太陽電池用基板及びスパッタリング用ターゲット素材
JP2004067452A (ja) * 2002-08-07 2004-03-04 Shin Etsu Handotai Co Ltd 単結晶の引き上げ条件の設計方法
JP2004307305A (ja) * 2003-04-10 2004-11-04 Sumitomo Mitsubishi Silicon Corp シリコン単結晶及び単結晶育成方法
JP2008069055A (ja) * 2006-09-15 2008-03-27 Covalent Materials Corp シリコン単結晶の製造方法

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101798705A (zh) * 2010-03-12 2010-08-11 上海太阳能电池研究与发展中心 一种从低温熔体中连续拉晶提纯多晶硅的方法及专用装置
CN101812727A (zh) * 2010-04-13 2010-08-25 上海太阳能电池研究与发展中心 一种直流电场下定向凝固提纯多晶硅的方法
WO2013111314A1 (ja) * 2012-01-27 2013-08-01 Kaneko Kyojiro シリコン純化法
JP2016130200A (ja) * 2015-01-14 2016-07-21 株式会社Sumco シリコン単結晶の製造方法

Also Published As

Publication number Publication date
JP4358300B2 (ja) 2009-11-04
JP4337954B2 (ja) 2009-09-30
EP2138610A1 (en) 2009-12-30
CA2681353A1 (en) 2008-09-25
JPWO2008114822A1 (ja) 2010-07-08
CN101680111A (zh) 2010-03-24
US20100143231A1 (en) 2010-06-10
KR20100015652A (ko) 2010-02-12
JP2009167101A (ja) 2009-07-30

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