WO2008091613A1 - Microwave hybrid and plasma rapid thermal processing of semiconductor wafers - Google Patents
Microwave hybrid and plasma rapid thermal processing of semiconductor wafers Download PDFInfo
- Publication number
- WO2008091613A1 WO2008091613A1 PCT/US2008/000839 US2008000839W WO2008091613A1 WO 2008091613 A1 WO2008091613 A1 WO 2008091613A1 US 2008000839 W US2008000839 W US 2008000839W WO 2008091613 A1 WO2008091613 A1 WO 2008091613A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- cavity
- wafer
- microwave
- hybrid material
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 235000012431 wafers Nutrition 0.000 title abstract description 98
- 239000000463 material Substances 0.000 claims abstract description 58
- 230000005855 radiation Effects 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims description 62
- 230000008569 process Effects 0.000 claims description 53
- 238000010438 heat treatment Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 229910005540 GaP Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000005083 Zinc sulfide Substances 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 4
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 230000002238 attenuated effect Effects 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 230000000977 initiatory effect Effects 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910000859 α-Fe Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910001067 superalloy steel Inorganic materials 0.000 claims 1
- 238000005336 cracking Methods 0.000 abstract description 5
- 238000011161 development Methods 0.000 abstract description 4
- 230000008646 thermal stress Effects 0.000 abstract description 3
- 238000009434 installation Methods 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910001026 inconel Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- -1 tungsten halogen Chemical class 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Definitions
- VLSI very large scale integration
- Fig. 1 is a schematic illustration of a hybrid microwave rapid thermal processing installation
- a SiC thickness of less than 1 mm can allow excess microwave energy to reach the wafer, resulting in edge heating due to the "diffraction effect.”
- the modulator thickness is chosen preferably to keep the modulator attenuation at less than 50%, so that at least 50% of microwave energy can reach the wafer.
- the modulator material should not completely enclose the wafer or too little microwave energy would reach the wafer.
- the modulator material generally does not need to cover the top surface of the wafer to allow the top surface to be exposed to microwaves .
- Fig. 3 illustrates a time-temperature cycle in which a Si wafer was heated using an arrangement as shown in Fig. 1.
- the time-temperature cycle is comparable to existing RTP methods and illustrates that a low thermal budget (the area under the t-T curve) is possible.
- a comparison of a Si wafer heated in the microwave environment both with and without the modulator showed the intensity of edge heating is considerably reduced when the modulator material is present.
- the cavity can be single mode or multi- mode. For large scale industrial applications, multi-mode microwave cavities are more suitable than the size-constrained single mode cavities. Suitable insulation can be provided for the cavity to increase the heating rates.
- a pyrometer 68 for measuring the temperature of the wafer may be provided through a view port 72 in a cavity wall. For optimum heating, the wafer is preferably supported centrally in the cavity.
- a pedestal 74 of a material, such as fibrous alumina, that does not absorb microwave radiation or thermal energy is suitable.
- Light absorption is thickness dependent, and non-uniform heating is usually a problem with large surface wafers.
- the present hybrid and plasma microwave heating provides more uniform heating of large surface wafers .
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Constitution Of High-Frequency Heating (AREA)
- Recrystallisation Techniques (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020097017699A KR20090113313A (en) | 2007-01-25 | 2008-01-23 | Microwave hybrid and plasma rapid thermal processing of semiconductor wafers |
JP2009547277A JP2010517294A (en) | 2007-01-25 | 2008-01-23 | Microwave hybrid and plasma rapid thermal processing of semiconductor wafers. |
EP08713219A EP2111631A1 (en) | 2007-01-25 | 2008-01-23 | Microwave hybrid and plasma rapid thermal processing or semiconductor wafers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US89745007P | 2007-01-25 | 2007-01-25 | |
US60/897,450 | 2007-01-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008091613A1 true WO2008091613A1 (en) | 2008-07-31 |
WO2008091613A8 WO2008091613A8 (en) | 2009-08-27 |
Family
ID=39644801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/000839 WO2008091613A1 (en) | 2007-01-25 | 2008-01-23 | Microwave hybrid and plasma rapid thermal processing of semiconductor wafers |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080207008A1 (en) |
EP (1) | EP2111631A1 (en) |
JP (1) | JP2010517294A (en) |
KR (1) | KR20090113313A (en) |
CN (1) | CN101669191A (en) |
WO (1) | WO2008091613A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011007544A1 (en) * | 2011-04-15 | 2012-10-18 | Von Ardenne Anlagentechnik Gmbh | Method and device for thermal treatment of substrates |
JP5977986B2 (en) * | 2011-11-08 | 2016-08-24 | 株式会社日立ハイテクノロジーズ | Heat treatment equipment |
US20130112669A1 (en) * | 2011-11-08 | 2013-05-09 | Takashi Uemura | Heat treatment apparatus |
JP2013201426A (en) * | 2012-02-20 | 2013-10-03 | Tokyo Univ Of Agriculture & Technology | Semiconductor substrate processing method and semiconductor substrate processing apparatus |
CN104736956B (en) * | 2012-10-11 | 2017-03-08 | Btu国际公司 | Mixed microwave and radiant heating arc furnace system |
US9750091B2 (en) * | 2012-10-15 | 2017-08-29 | Applied Materials, Inc. | Apparatus and method for heat treatment of coatings on substrates |
US9129918B2 (en) * | 2013-10-30 | 2015-09-08 | Taiwan Semiconductor Manufacturing Company Limited | Systems and methods for annealing semiconductor structures |
US9338834B2 (en) | 2014-01-17 | 2016-05-10 | Taiwan Semiconductor Manufacturing Company Limited | Systems and methods for microwave-radiation annealing |
WO2018020733A1 (en) * | 2016-07-26 | 2018-02-01 | 株式会社日立国際電気 | Manufacturing method and program for heating body, substrate processing device and semiconductor device |
US20200286757A1 (en) * | 2019-03-08 | 2020-09-10 | Dsgi Technologies, Inc. | Apparatus for annealing semiconductor integrated circuit wafers |
TWI810772B (en) * | 2021-12-30 | 2023-08-01 | 日揚科技股份有限公司 | A fast annealing equipment |
CN115206848B (en) * | 2022-08-01 | 2023-10-24 | 北京屹唐半导体科技股份有限公司 | Wafer heat treatment device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4687895A (en) * | 1984-07-30 | 1987-08-18 | Superwave Technology, Inc. | Conveyorized microwave heating system |
US20020073925A1 (en) * | 1999-04-22 | 2002-06-20 | David B. Noble | Apparatus and method for exposing a substrate to plasma radicals |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4664937A (en) * | 1982-09-24 | 1987-05-12 | Energy Conversion Devices, Inc. | Method of depositing semiconductor films by free radical generation |
JPS62248299A (en) * | 1986-04-22 | 1987-10-29 | 横浜ゴム株式会社 | Electric wave absorbing composite unit |
DE3820237C1 (en) * | 1988-06-14 | 1989-09-14 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften Ev, 3400 Goettingen, De | |
US7642205B2 (en) * | 2005-04-08 | 2010-01-05 | Mattson Technology, Inc. | Rapid thermal processing using energy transfer layers |
-
2008
- 2008-01-23 CN CN200880004818A patent/CN101669191A/en active Pending
- 2008-01-23 KR KR1020097017699A patent/KR20090113313A/en not_active Application Discontinuation
- 2008-01-23 US US12/011,009 patent/US20080207008A1/en not_active Abandoned
- 2008-01-23 WO PCT/US2008/000839 patent/WO2008091613A1/en active Application Filing
- 2008-01-23 JP JP2009547277A patent/JP2010517294A/en active Pending
- 2008-01-23 EP EP08713219A patent/EP2111631A1/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4687895A (en) * | 1984-07-30 | 1987-08-18 | Superwave Technology, Inc. | Conveyorized microwave heating system |
US20020073925A1 (en) * | 1999-04-22 | 2002-06-20 | David B. Noble | Apparatus and method for exposing a substrate to plasma radicals |
Also Published As
Publication number | Publication date |
---|---|
CN101669191A (en) | 2010-03-10 |
KR20090113313A (en) | 2009-10-29 |
WO2008091613A8 (en) | 2009-08-27 |
EP2111631A1 (en) | 2009-10-28 |
JP2010517294A (en) | 2010-05-20 |
US20080207008A1 (en) | 2008-08-28 |
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