WO2005069081A2 - Polarization-modulating optical element - Google Patents
Polarization-modulating optical element Download PDFInfo
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- WO2005069081A2 WO2005069081A2 PCT/EP2005/000320 EP2005000320W WO2005069081A2 WO 2005069081 A2 WO2005069081 A2 WO 2005069081A2 EP 2005000320 W EP2005000320 W EP 2005000320W WO 2005069081 A2 WO2005069081 A2 WO 2005069081A2
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- Prior art keywords
- polarization
- optical element
- modulating
- modulating optical
- optical
- Prior art date
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/08—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3075—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state for use in the UV
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0136—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour for the control of polarisation, e.g. state of polarisation [SOP] control, polarisation scrambling, TE-TM mode conversion or separation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
Definitions
- the invention relates to an optical element that affects the polarization of light rays.
- the optical element has a thickness profile and consists or comprises of an optically active crystal with an optical axis.
- the s- and p-component of the electrical field vector are subject to respectively different degrees of reflection and refraction at the interface of two media with different refractive indices.
- the polarization component that oscillates parallel to the plane of incidence of a light ray is referred to as p-component, while the polarization component that
- BESTATIGUNGSKOPIE oscillates perpendicular to the plane of incidence of a light ray is referred to as s-component.
- the different degrees of reflection and refraction that occur in the s-component in comparison to the p-component have a significant detrimental effect on the imaging process.
- a polarization distribution where the planes of oscillation of the electrical field vectors of individual linearly polarized light rays in a pupil plane of the system have an orientation that is perpendicular to the radius originating from the optical axis.
- a polarization distribution of this type will hereinafter be referred to as tangential polarization. If a bundle of light rays that are tangentially polarized in accordance with this definition meets an interface between two media of different refractive indices, only the s-component of the electrical field vector will be present so that, as in the preceding case, there will be uniformity in the reflection and refraction occurring in a field plane.
- U.S. Patent 6,191,880 Bl discloses an optical arrangement for generating an approximately radial polarization.
- the arrangement includes among other things a raster of half-wave plates whose respective directions of preference are oriented so that when linearly polarized light passes through the raster arrangement, the plane of oscillation is rotated into the direction of a radius originating from the optical axis.
- the raster arrangement is produced by joining a large number of individually oriented half-wave plates, it is expensive to produce.
- the change in the direction of the polarization is constant within the area of each individual half-wave plate whose diameter is typically between 10 and 20 mm, so that no continuous radial polarization can be produced through this concept.
- a birefringent element of crystalline quartz with an irregularly varying thickness is proposed in DE 198 07 120 Al for the compensation of local aberrations of a defined state of polarization in an optical system.
- the variation in thickness in a birefringent element of this type leads to locally different states of polarization.
- the linear state of polarization is, as a rule, not preserved in an arrangement of this type.
- the present invention therefore has the objective to propose a polarization-modulating optical element which - with a minimum loss of intensity - affects the polarization of light rays in such a way that from linearly polarized light with a first distribution of the directions of the oscillation planes of individual light rays, the optical element generates linearly polarized light with a second distribution of the directions of the oscillation planes of individual light rays.
- Further objects of the present invention are to propose an optical system with improved properties of the polarization-modulating optical element regarding thermal stability of the second distribution of oscillation planes (polarization distribution) , and to minimize the influence of additional optical elements in the optical system to the polarization distribution after the light rays have passed these elements.
- a polarization- modulating optical element which consists or comprises of an optically active crystal and which, according to the invention, is shaped with a thickness profile that varies in the directions perpendicular to the optical axis.
- the optical systems as described in claims 57, 64, 65, 70 and 75 meet the objects of the present invention. Additional preferred embodiments of the optical systems according to the present invention are given in the dependent claims .
- a polarization-modulating optical element has the effect that the plane of oscillation of a first linearly polarized light ray and the plane of oscillation of a second linearly polarized light ray are rotated, respectively, by a first and a second angle of rotation, with the first angle of rotation being different from the second angle of rotation.
- the polarization-modulating optical element is made of an optically active material.
- an optically active crystal with an optical axis is used as raw material for the polarization-modulating optical element.
- the optical axis of a crystal also referred to as axis of isotropy, is defined by the property that there is only one velocity of light propagation associated with the direction of the optical axis. In other words, a light ray traveling in the direction of an optical axis is not subject to a linear birefringence.
- the polarization-modulating optical element has a thickness profile that varies in the directions perpendicular to the optical axis of the crystal.
- linear polarization distribution in this context and hereinafter is used with the meaning of a polarization distribution in which the individual light rays are linearly polarized but the oscillation planes of the individual electrical field vectors can be oriented in different directions.
- the oscillation plane of the electrical field vector is rotated by an angle that is proportional to the distance traveled inside the crystal.
- the sense of rotation i.e., whether the oscillation plane is rotated clockwise or counterclockwise, depends on the crystal material, for example right-handed quartz vs. left-handed quartz.
- the polarization plane is parallel to the respective directions of the polarization and the propagation of the light ray.
- the thickness profile is designed so that the plane of oscillation of a first linearly polarized light ray and the plane of oscillation of a second linearly polarized light ray are rotated, respectively, by a first and a second angle of rotation, with the first angle of rotation being different from the second angle of rotation.
- the polarization-modulating optical element has an element axis oriented in the same direction as the optical axis of the crystal.
- the thickness profile of the optical element is a function of the azimuth angle ⁇ alone, with the azimuth angle ⁇ being measured relative to a reference axis that intersects the element axis at a right angle.
- the thickness of the optical element is constant along a radius that intersects the element axis at a right angle and forms an azimuth angle ⁇ with the reference axis.
- ⁇ r ⁇ stands for the specific rotation of the optically active crystal.
- At each discontinuity location there is an abrupt step in the thickness by an amount of 180°/ ⁇ .
- the two abrupt steps- at the discontinuity locations can also be distributed over an azimuth angle range of a few degrees. However, this has the result of a non-optimized polarization distribution in the transition range .
- the slopes m and n have the same absolute magnitude but opposite signs.
- the polarization-modulating optical element is divided into a large number of planar-parallel portions of different thickness or comprises at least two planar-parallel portions.
- These portions can for example be configured as sectors of a circle, but they could also have a hexagonal, square, rectangular, or trapezoidal shape.
- a pair of first plan-parallel portions are arranged on opposite sides of a central element axis of said polarization- modulating optical element, and a pair of second plan-parallel portions are arranged on opposite sides of said element axis and circumferentially displaced around said element axis with respect to said first plan-parallel portions, wherein each of said first portions has a thickness being different from a thickness of each of said second portions.
- a plane of oscillation of linearly polarized light passing through the polarization-modulating optical element is rotated by a first angle of rotation ⁇ i within at least one of said first plan-parallel portions and by a second angle of rotation ⁇ 2 within at least one of said second plan-parallel portions, such that ⁇ i and ⁇ 2 are approximately conforming or conform to the expression
- (2n+l) • 90° , with n representing an integer.
- p representing an integer
- ⁇ 2 q-180°, with q representing an integer other than zero.
- such an embodiment of the polarization modulating optical element may be advantageously used in affecting the polarization of traversing polarized light such that exiting light has a polarization distribution being -depending of the incoming light- either approximately tangentially or approximately radially polarized.
- the pair of second plan-parallel portions may particularly be circumferentially displaced around said element axis with respect to said pair of first plan-parallel portions by approximately 90°.
- said pair of first plan-parallel portions and said pair of second plan-parallel portions are arranged on opposite sides of a central opening or a central obscuration of said polarization-modulating optical element.
- Adjacent portions of said first and second pairs can be spaced apart from each other by regions being opaque to linearly polarized light entering said polarization-modulating optical element .
- Said portions of said first and second group can particularly be held together by a mounting.
- Said mounting can be opaque to linearly polarized light entering said polarization-modulating optical element.
- the mounting can have a substantially spoke-wheel shape.
- the polarization-modulating optical element comprises a first group of substantially planar-parallel portions wherein a plane of oscillation of traversing linearly polarized light is rotated by a first angle of rotation ⁇ x , and a second group of substantially planar-parallel portions wherein a plane of oscillation of traversing linearly polarized light is rotated by a second angle of rotation, such that ⁇ and ⁇ 2 are approximately conforming or conform to the expression
- (2n+l) ⁇ 90°, with n representing an integer.
- the thickness profile of the polarization-modulating optical element has a continuous surface contour without abrupt changes in thickness, whereby an arbitrarily selected polarization distribution can be generated whose thickness profile is represented by a continuous function of the location.
- the birefringence has to be taken into account for light rays whose direction of propagation deviates from the direction of the optical crystal axis.
- a travel distance of 90°/ ⁇ inside the crystal causes a linear polarization to be rotated by 90°.
- the 90° rotation will be equivalent to an exchange between the fast and slow axis in relation to the electrical field vector of the light.
- a total compensation of the birefringence is provided for light rays with small angles of incidence if the distance traveled inside the crystal equals an integer multiple of 180°/ ⁇ .
- the maximum angle of incidence of an incident light bundle with a large number of light rays within a spread of angles relative to the optical crystal axis is no larger than 100 mrad, preferably no larger than 70 mrad, and with special preference no larger than 45 mrad.
- an optical arrangement is advantageously equipped with a device that allows at least one further polarization-modulating optical element to be placed in the light path.
- This further polarization-modulating optical element can be an additional element with the features described above. However, it could also be configured as a planar-parallel plate of an optically active material or an arrangement of two half-wavelength plates whose respective fast and slow axes of birefringence are rotated by 45° relative to each other.
- the further polarization-modulating optical element that can be placed in the optical arrangement can in particular be designed in such a way that it rotates the oscillation plane of a linearly polarized light ray by 90°.
- the first polarization- modulating element in the optical arrangement produces a tangential polarization.
- the tangential polarization can be converted to a radial polarization.
- the refraction occurring in particular at sloped surfaces of a polarization-modulating element can cause a deviation in the direction of an originally axis-parallel light ray after it has passed through the polarization- modulating element.
- a compensation plate of a not optically active material in the light path of an optical system, with a thickness profile of the compensation plate designed so that it substantially compensates an angular deviation of the transmitted radiation that is caused by the polarization-modulating optical element.
- an immersion fluid covering the profiled surface of the polarization-modulating element could be used for the same purpose .
- Polarization-modulating elements of the foregoing description, and optical arrangements equipped with them are advantageously used in projection systems for microlithography applications.
- polarization-modulating elements of this kind and optical arrangements equipped with them are well suited for projection systems in which the aforementioned immersion technique is used, i.e., where an immersion medium with a refractive index different from air is present in the space between the optical element nearest to the substrate and the substrate .
- Figure 1 illustrates a polarization-modulating optical element with a thickness profile
- Figure 2 schematically illustrates how the plane of oscillation is rotated when a linearly polarized light ray propagates along the optical axis in an optically active crystal
- Figure 3 illustrates a first exemplary embodiment of a polarization-modulating optical element
- Figure 4a schematically illustrates a second exemplary embodiment of a polarization-modulating optical element
- Figure 4b illustrates the thickness profile as a function of the azimuth angle in the embodiment of the polarization-modulating optical element of Figure 4a;
- Figure 4c illustrates the thickness profile as a function of the azimuth angle in a further embodiment of the polarization-modulating optical element;
- Figure 4d illustrates the thickness profile as a function of the azimuth angle in the embodiment of the polarization-modulating optical element of Figure 3;
- Figure 4e illustrates the thickness profile as a function of the azimuth angle in a further embodiment of the polarization-modulating optical element;
- Figure 4f schematically illustrates a further exemplary embodiment of a polarization-modulating optical element
- Figure 5 schematically illustrates the polarization distribution of a bundle of light rays before and after passing through the polarization-modulating optical element with the thickness profile according to Figure 3 or 4d;
- Figure 6 schematically illustrates the polarization distribution of a bundle of light rays before and after passing through an optical arrangement with the polarization-modulating optical element with the thickness profile according to Figure 3 and a further polarization-modulating optical element;
- Figure 7a schematically illustrates the polarization distribution of a bundle of light rays before and after passing through an optical arrangement with the polarization-modulating optical element with the thickness profile according to Figure 4e and a planar-parallel plate, one half of which is configured as a half-wave plate;
- Figure 7b shows a plan view of a planar-parallel plate, one half of which is configured as a half-wave plate;
- Figure 8 schematically illustrates a microlithography projection system with a polarization-modulating optical element
- Figure 9 schematically shows a parallel plane plate of optical active material used as a polarization- modulating element by adjusting its temperature and/or temperature profile
- Figure 10 shows a combination of a parallel plate of optical active material with a plate made of birefringent material ;
- Figure 11 shows schematically a temperature compensated polarization-modulating optical element for the application in an optical system.
- Figure 1 illustrates a polarization-modulating optical element 1 of an optically active material.
- optically active crystals with at least one optical crystal axis which are transparent for the wavelength of the light being used.
- Te0 2 works in a range of wavelengths from 1000 nm down to 300 nm
- AgGaS 2 works from 500 nm to 480 nm
- quartz from 800 nm down to 193 nm.
- the polarization-modulating optical element 1 is designed so that the element axis is oriented parallel to the optical crystal axis.
- the optical element 1 is designed with a thickness profile (measured parallel to the element axis EA) which varies in the directions perpendicular to the element axis EA, also comprising variations in thickness of the optical element in an azimuth direction ⁇ (see Fig. 3) at e.g. a fixed distance of the element axis EA.
- Figure 2 will serve to explain the function of optically active crystals, and in particular of polarization- modulating elements made from such crystals, in more detail.
- Optically active crystals have at least one optical axis OA which is inherent in the crystal structure.
- the plane of oscillation of the electrical field vector 206 is rotated by an angle ⁇ of proportionate magnitude as the distance d traveled by the light inside the crystal 202.
- the proportionality factor between distance d and angle of rotation is the specific rotation ⁇ .
- ⁇ (T) is the optical activity coefficient or specific rotation at the temperature T
- ⁇ 0 is the specific rotation at a reference temperature T 0 .
- the specific rotation ⁇ may itself be dependent on the location within the modulating element such that ⁇ becomes an ⁇ (x,y,z) or ⁇ (r, ⁇ ,z), where x,y or r, ⁇ are
- ⁇ may also depend on the z-direction (along the optical axis or element axis EA, or more general along a preferred direction in an optical system or a direction parallel to the optical axis of an optical system)
- the optical effective thickness D is calculated by integrating the specific rotation ⁇ along the light path of a light ray within the polarization-modulating optical element.
- the present invention relates to an optical system comprising an optical axis or a preferred direction given by the direction of a light beam propagating through the optical system.
- the optical system also comprises a polarization-modulating optical element described by coordinates of a coordinate system, wherein one preferred coordinate of the coordinate system is parallel to the optical axis of the optical system or parallel to the preferred direction.
- this preferred direction was the z-coordinate which is the preferred coordinate.
- the polarization-modulating optical element comprises optical active material and also a profile of effective optical thickness D as defined above, wherein the effective optical thickness D varies at least as a function of one coordinate different from the preferred coordinate of the coordinate system describing the polarization-modulating optical element.
- the effective optical thickness D varies at least as a function of the x- or y- coordinate, different from the z-coordinate (the preferred coordinate) .
- Figure 3 illustrates an embodiment of the polarization-modulating optical element 301 which is suited specifically for producing a tangential polarization. A detailed description will be presented in the context of Figures 4d and 5. The embodiment illustrated in Figure 3 will serve to introduce several technical terms that will be used hereinafter with the specific meanings defined here.
- the polarization-modulating optical element 301 has a cylindrical shape with a base surface 303 and an opposite surface 305.
- the base surface 303 is designed as a planar circular surface.
- the element axis EA extends perpendicular to the planar surface.
- the opposite surface 305 has a contour shape in relation to the element axis EA in accordance with a given thickness profile.
- the optical axis of the optically active crystal runs parallel to the element axis EA.
- the reference axis RA which extends in the base plane, intersects the element axis at a right angle and serves as the reference from which the azimuth angle ⁇ is measured.
- the thickness of the polarization-modulating optical element 301 is constant along a radius R that is perpendicular to the element axis EA and directed at an angle ⁇ relative to the reference axis RA.
- the optical element 301 has an optional central bore 307 coaxial with the element axis EA.
- the polarization-modulating optical element 301 not necessary need to comprise a planar base surface 303.
- This surface in general can also comprise a contour shaped surface e.g. similar or equal to the surface as designated by 305 shown in Fig. 3. In such a case it is of advantage to describe the contour surfaces 303 and 305 relative to a plane surface perpendicular to the optical axis or element axis.
- Figure 4a schematically illustrates a further embodiment of the polarization-modulating optical element 401.
- the element axis EA through the center of the polarization- modulating optical element 401 in this representation runs perpendicular to the plane ⁇ of the drawing, and the optical crystal axis of the crystal runs parallel to the element axis.
- the polarization-modulating optical element 401 has an optional central bore 407.
- the polarization-modulating optical element 401 is divided into a large number of planar-parallel portions 409 in the shape of sectors of a circle which differ in their respective thicknesses. Alternative embodiments with different shapes of the portions 409 are conceivable. They could be configured, e.g., as hexagonal, square, rectangular or trapeze-shaped raster elements .
- the embodiment according to Fig. 4 a can be modified such that the different thicknesses of the sectors should be understood as different effective optical thicknesses D.
- the specific rotation ⁇ may vary from one segment to the other too.
- the polarization-modulating optical element can e.g. have a shape as shown in Fig. 4a in which the sectors 409 are at least partly exchanged e.g. by any optical inactive material, which is the simplest case to vary the specific rotation ⁇ to zero.
- the sectors 409 may be replaced by cuvettes or cells which are filed with an optical active or optical inactive liquid.
- the polarization-modulating optical element may comprise optical active and optical inactive sections.
- Such an optical system according to the present invention may comprise a polarization-modulating optical element which comprises an optically active or an optically inactive liquid and/or an optically active crystal. Further, it is advantageously possible that the polarization-modulating optical element of the optical system according to the present invention comprises clockwise and counterclockwise optically active materials. These materials could be solid or liquid optically active materials.
- the formation of a certain temperature distribution within the liquid may be possible with appropriate heating and/or cooling means controlled by control means.
- the optical systems in accordance with the present invention advantageously modify respective planes of oscillation of a first linearly polarized light ray and a second linearly polarized light ray. Both light rays propagating through the optical system, and being at least a part of the light beam propagating through the optical system.
- the light rays are also passing the polarization-modulating optical element with different paths, and are rotated by a respective first and second angle of rotation such that the first angle is different of the second angle.
- the polarization-modulating optical element of the optical systems according to the present invention transform a light bundle with a first linear polarization distribution, which enters said polarization-modulating optical element, into a light bundle exiting said polarization-modulating optical element.
- the exiting light bundle having a second linear polarization distribution, wherein the second linear polarization distribution is different from the first linear polarization distribution.
- the term azimuthal section as used in the present context means a section traversing the thickness profile d( ⁇ ,r) along the circle 411 marked in Figure 4a, i.e., extending over an azimuth angle range of 0° ⁇ ⁇ ⁇ 360° at a constant radius r.
- An azimuthal section of a polarization-modulating optical element 401 that is divided into sector-shaped portions has a stair-shaped profile in which each step corresponds to the difference in thickness d or optical effective thickness D between neighboring sector elements.
- the profile has e.g. a maximum thickness d max and a minimum thickness d min .
- d max maximum thickness
- d min minimum thickness
- the height of each individual step of the profile depends on the number n of sector elements and has a magnitude of 360°/ (n « ⁇ ) .
- the profile has a discontinuity where the thickness of the polarization-modulating optical element 401 jumps from d m i n to d ma -
- the profile has e.g. a maximum optical effective thickness D ma ⁇ and a minimum optical effective thickness D miI1 , and the geometrical thickness d is e.g. constant, resulting in a variation of the specific rotation ⁇ of the individual segments 409 of the element 401.
- the geometrical thickness d is e.g. constant, resulting in a variation of the specific rotation ⁇ of the individual segments 409 of the element 401.
- the change of the specific rotation of each individual step of the profile depends on the number n of sector elements 409 and has a magnitude of 360°/(n-d).
- the individual sector elements 409 are preferably made of or comprises cuvettes or cells, filled with an optical active liquid with the required specific rotation ⁇ .
- the required specific rotation e.g. can be adjusted by the concentration of the optical active material of the liquid, or by changing the liquid material itself.
- the segments 409 of a polarization-modulating optical element 401 may comprise components of solid optically active material (like crystalline quartz) and cells or cuvettes filled with optically active material, and these components are placed behind each other in the light propagation direction.
- the cuvette itself may comprise optically active material like crystalline quartz.
- the polarization-modulating optical element of the foregoing description converts linearly polarized incident light into a linear polarization distribution in which the oscillation planes of linearly polarized light rays are rotated by an angle that depends on the thickness (or optical effective thickness) of each individual sector element. However, the angle by which the direction of polarization is rotated is constant over an individual sector element. Thus, the distribution function for the directions of the oscillation planes of the individual field vectors takes only certain discrete values.
- a continuous distribution of linear polarizations can be achieved with an optical element that has a continuously varying thickness (optical effective thickness) profile along an azimuthal section.
- FIG. 4c An example of a continuously varying thickness profile is illustrated in Figure 4c.
- the slope is defined a slope of a screw.
- the slope depends on the distance of the element axis, e.g. if the polarization-modulating optical element 301 has a given constant screw-slope (lead of a screw) .
- a further embodiment of a polarization-modulating optical element which is shown in Figure 4d has a thickness profile (in general optical effective thickness profile) which is likewise suitable for producing a continuous distribution of linear polarizations, in particular a tangentially oriented polarization.
- This thickness profile corresponds to the embodiment shown in Figure 3, in which the angle ⁇ is measured in counterclockwise direction.
- Figure 4e represents the thickness profile (in general optical effective thickness profile) along an azimuthal section for a further embodiment of the polarization- modulating optical element 401.
- the azimuthal section is in this case a linear function of the azimuth angle ⁇ with a first slope m for 0 ⁇ ⁇ ⁇ 180° and with a second slope n for 180° ⁇ ⁇ ⁇ 360°.
- the slopes m and n are of equal absolute magnitude but have opposite signs.
- Figure 4f schematically illustrates a further embodiment 421 of the polarization-modulating optical element.
- the element axis EA through the center of the polarization-modulating optical element 421 runs perpendicular to the plane of the drawing, and the optical crystal axis runs parallel to the element axis.
- the polarization-modulating optical element 421 comprises of four separate sector-shaped parts 422, 423, 424, 425 of an optically active crystal material which are held together by a mounting device 426 which can be made, e.g., of metal and whose shape can be described as a circular plate 427 with four radial spokes 428.
- the mounting is preferably opaque to the radiation which is entering the polarization-modulating optical element, thereby serving also as a spacer which separates the sector-shaped parts 422, 423, 424, 425 from each other.
- the embodiment of the present invention according to Fig. 4f is not intended to be limited to any specific shape and area of mounting device 426, which may also be omitted.
- incident light which is entering the polarization- modulating optical element can also be selectively directed onto the sector-shaped parts, e.g. by means of a diffractive structure or other suitable optical components.
- the sector-shaped parts 422 and 424 have a first thickness dl which is selected so that the parts 422 and 424 cause the plane of oscillation of linearly polarized axis- parallel light to be rotated by 90°+p-180°, where p represents an integer.
- the sector-shaped parts 423 and 425 have a second thickness d2 which is selected so that the parts 423 and 425 cause the plane of oscillation of linearly polarized axis- parallel light to be rotated by q-180°, where q represents an integer other than zero.
- the exiting light has a polarization distribution which is exactly tangential at the centerlines 429 and 430 of the sector-shaped parts 422, 423, 424, 425 and which approximates a tangential polarization distribution for the rest of the polarization-modulating optical element 421.
- the exiting light has a polarization distribution which is exactly radial at the centerlines 429 and 430 of the sector-shaped parts 422, 423, 424, 425 and which approximates a radial polarization distribution for the rest of the polarization-modulating optical element 421.
- Fig. 4f is not intended to be limited to the shapes and areas and the number of sector-shaped parts exemplarily illustrated in Fig. 4f, so that other suitable shapes (having for example but not limited to trapeze-shaped, rectangular, square, hexagonal or circular geometries) as well as more or less sector-shaped parts 422, 423, 424 and 425 can be used.
- suitable shapes having for example but not limited to trapeze-shaped, rectangular, square, hexagonal or circular geometries
- ⁇ and ⁇ 2 provided by the sector-shaped parts 422, 423, 424, 425 (i.e.
- the corresponding thicknesses of the sector-shaped parts 422, 423, 424, 425) may be more generally selected to approximately conform to the expression
- (2n+l) • 90° , with n representing an integer, for example to consider also relative arrangements where incoming light is used having a polarization plane which is not necessarily aligned with the x- or y-direction.
- n representing an integer
- a polarization-modulating optical element of crystalline quartz with the design according to Figures 3 and 4d.
- the specific rotation ⁇ of quartz for light with a wavelength of 193 nm is in the range of (325.2 + 0.5)°/mm, which was measured at a wavelength of 180 nm, or more precise it is 321.1 °/mm at 21.6°C.
- the strength and effect of the optical activity is approximately constant within a small range of angles of incidence up to 100 mrad.
- An embodiment could for example be designed according to the following description: An amount of 276.75 ⁇ m, which approximately equals 90°/ , is selected for the minimum thickness d miI1 , if crystalline quartz is used Alternatively, the minimum thickness d m i n can also be an integer multiple of this amount.
- the element diameter is 110 mm, with the diameter of the optically active part being somewhat smaller, for example 105 mm.
- the base surface is designed as a planar surface as illustrated in Figure 3.
- the opposite surface has a thickness profile d(r, ⁇ ) in accordance with Figure 4d.
- the thickness profile is defined by the following mathematical relationships : -1 n ⁇ ° Q
- the polarization-modulating optical element has a central opening 407 with a diameter 10.5, i.e., one-tenth of the maximum aperture.
- the thickness maxima and minima, which are found at the discontinuities, are 830.26 ⁇ and 276.75 ⁇ m, respectively for the first given example.
- the embodiment of the foregoing description can be produced with a robot-polishing process. It is particularly advantageous to produce the polarization-modulating element from two wedge-shaped or helically shaped half-plates which are seamlessly joined together after polishing. If the element is produced by half-plates, it is easy and in some applications of additional advantage to use one clockwise and one counterclockwise optically active material like clockwise crystalline and counterclockwise crystalline quartz (R-quartz and L-quartz) .
- Figure 5 schematically illustrates how a polarization- modulating optical element 501 with a thickness profile according to Figures 3 and 4d converts the polarization distribution of an entering light bundle 513 with a uniformly oriented linear polarization distribution 517 into a tangential polarization 519 of an exiting light bundle 515.
- Figure 6 schematically illustrates how an optical arrangement with a polarization-modulating optical element 601 with a thickness profile according to Figures 3 and 4d in combination with a further polarization-modulating element 621 converts the polarization distribution of an entering light bundle 613 with a uniformly oriented linear polarization distribution 617 into a radial polarization 623 of an exiting light bundle 615.
- the polarization-modulating optical element 601 produces a tangential polarization distribution.
- a tangential polarization distribution can be converted into a radial polarization distribution by a 90° -rotation of the respective oscillation plane of each individual linearly polarized ray of the light bundle.
- One possible concept is to arrange a planar- parallel plate of an optically active crystal as a further polarization-modulating element 621 in the light path, where the thickness of the plate is approximately 90°/ ⁇ p with ⁇ p representing the specific rotation of the optically active crystal.
- the optical crystal axis of the planar parallel plate runs likewise parallel to the element axis.
- the further polarization-modulating element 621 can be configured as a 90° -rotator that is assembled from two half-wave plates.
- a 90° -rotator consists of two half-wave plates of birefringent crystal material.
- Each plate has a slow axis associated with the direction of the higher refractive index and, perpendicular to the slow axis, a fast axis associated with the direction of the lower refractive index.
- the two half-wave plates are rotated relative to each other so their respective fast and slow axes are set at an angle of 45° from each other.
- the further polarization-modulating optical element 621 can be connected to the polarization-modulating optical element 601.
- an exchange device that allows the further polarization-modulating element 621 to be placed in the light path and to be removed again or to be replaced by another element .
- a tangential polarization distribution can also be produced with a polarization-modulating optical element that has a thickness profile in accordance with figure 4e.
- the thickness profile in this embodiment of the invention has no discontinuities.
- the uniformly oriented polarization distribution 717 of the entering light bundle 713 is first transformed by the polarization-modulating optical element 701 into a linear polarization distribution 727 of an exiting light bundle 715.
- the one-half of the entering light bundle 713 that passes through the polarization-modulating optical element 701 in the azimuth range 0 ⁇ ⁇ ⁇ 180° of the thickness profile shown in Figure 4e is converted so that the corresponding one-half of the exiting light bundle has a tangential polarization distribution.
- the other half has a different, non-tangential polarization distribution 727.
- a further polarization- modulating optical element is needed in the light path in order to completely convert the polarization distribution 727 of the light bundle 715 exiting from the polarization- modulating optical element 701 into a tangential polarization distribution 719.
- the further polarization-modulating optical element is in this case configured as a planar-parallel plate 725 with a first half 729 and a second half 731. A plan view of the planar-parallel plate 725 is shown in Figure 7b.
- the first half 729 is made of an isotropic material that has no effect on the state of polarization of a light ray, while the second half 731 is designed as a half-wave plate.
- the planar- parallel plate 725 in the optical arrangement of Figure 7a is oriented so that a projection RA' of the reference axis RA of the polarization-modulating optical element 701 onto the planar-parallel plate runs substantially along the separation line between the first half 729 and the second half 731.
- the slow axis LA of the birefringence of the half-wave plate is perpendicular to this separation line.
- tangential polarization can also be achieved with a polarization-modulating optical element, having a thickness profile as given by Fig.
- each wedge-shaped element has a constant screw- slope, but the slopes have different directions as shown in the profile of Fig. 4e. Further, it is not necessary that the slopes of the geometrical thickness d have the same absolute values, it is sufficient if the slopes D of the optical effective thicknesses have the same absolute values. In this case the specific rotations ⁇ are different regarding absolute values for the two wedge-shaped elements which form the polarization-modulating optical element.
- Figure 8 schematically illustrates a microlithography projection system 833 which includes the light source unit 835, the illumination system 839, the mask 853 which carries a microstructure, the projection objective 855, and the substrate 859 that is being exposed to the projection.
- the light source unit 835 includes a DUV- or VUV-laser, for example an ArF laser for 192 nm, an F 2 laser for 157 nm, an Ar 2 laser for 126 nm or a Ne 2 laser for 109 nm, and a beam-shaping optical system which produces a parallel light bundle.
- the rays of the light bundle have a linear polarization distribution where the oscillation planes of the electrical field vectors of the individual light rays are oriented in a uniform direction.
- the principal configuration of the illumination system 839 is described in DE 195 29 563 (US 6,258,433).
- the parallel light bundle falls on the divergence-increasing optical element 837.
- a divergence- increasing optical element one could use for example a raster plate with an arrangement of diffractive or refractive raster elements.
- Each raster element generates a light bundle whose angle distribution is determined by the dimension and focal length of the raster element.
- the raster plate is located in or near the object plane of an objective 840 that follows downstream in the light path.
- the objective 840 is a zoom objective which generates a parallel light bundle with a variable diameter.
- a direction-changing mirror 841 directs the parallel light bundle to an optical unit 842 which contains an axicon (i.e., a rotationally symmetric prism arrangement) 843.
- the zoom objective 840 in cooperation with the axicon 843 generates different illumination profiles in the pupil plane 845, depending on the setting of the zoom and the position of the axicon elements.
- a polarization- modulating optical element 801, for example of the kind shown in Figure 3, is arranged in the pupil plane 845.
- the polarization-modulating optical element 801 is followed in the light path by a compensation plate 847 which has a thickness profile designed to compensate the angle deviations which the polarization-modulating optical element causes in the light rays that pass through it.
- the optical unit 842 is followed by a reticle-masking system (REMA) 849.
- the REMA Objective 851 projects an image of the reticle-masking system 849 onto the structure-carrying mask (reticle) 853, whereby the illuminated area of the reticle 853 is delimited.
- the projection objective 855 projects the image of the structure- carrying mask 853 onto the light-sensitive substrate 859.
- the space between the last optical element 857 of the projection objective and the light-sensitive substrate 859 contains an immersion liquid 861 with a refractive index different from air.
- An additional advantage of the present invention is that polarization-modulating optical elements or the optical system according to the present invention can be used for adjusting the polarization distribution and also for temperature compensation of the polarization distribution in a microlithography projection system as described in Fig. 8.
- Advanced microlithography projection systems require in some applications a predefined polarization distribution at the reticle 853 with an accuracy of about 5° or even better, in some cases even better than 1°. Since the polarization distribution at the reticle is influenced by the various optical elements by e.g. tension- induced birefringence, or by undefined or uncontrolled changes of the temperature of individual optical elements, the polarization distribution can unpredictably or uncontrollably change over time.
- the optical system preferably comprises a polarization control system for controlling the polarization distribution of the light beam which is propagating through the optical system.
- the polarization distribution of interest is at a predefined location in the optical system.
- the polarization control system comprises at least one heating or cooling device to modify the temperature and/or the temperature distribution of the polarization- modulating optical element to affect the polarization distribution of the light beam at the predefined location.
- the polarization-modulating optical element may have a varying or constant effective optical thickness.
- the optical system comprises an optical axis or a preferred direction given by the direction of a light beam propagating through the optical system.
- the optical system additionally comprises a polarization-modulating optical element described by coordinates of a coordinate system, wherein one preferred coordinate of the coordinate system is parallel to the optical axis or parallel to said preferred direction.
- the polarization-modulating optical element comprises solid and/or liquid optically active material, wherein the effective optical thickness is constant as a function of at least one coordinate different from the preferred coordinate of the coordinate system.
- the optical system comprises further a polarization control system for controlling the polarization distribution of the light beam (propagating through the optical system) at a predefined location in the optical system, and the polarization control system comprises at least one heating or cooling device to modify the temperature and/or the temperature distribution of the polarization-modulating optical element to affect the polarization distribution of the light beam at the predefined location.
- the polarization-modulating optical element as used e.g.
- the optical axis OA of the parallel plate 901 is directed parallel or approximately parallel to the propagation of the light (indicated by reference numeral 950) in the optical system.
- Approximately parallel means that the angle between the optical axis OA of the parallel plate 901 and the direction of the light propagating through the optical system is smaller than 200 mrad, preferably smaller than 100 mrad or even smaller than 50 mrad.
- Controlling the temperature of the plate 901 will result in a controlled change of polarization. If for example the temperature of the plate will be controlled in a range of about 20 °C to 40 °C, the polarization angles can be controllably changed in a range of about +13.5° for such a plate 901 made of quartz. This high sensitivity allows a control of the polarization distribution by temperature control.
- a plane plate with a thickness d of about 0.1 mm up to 20 mm will become a polarization- modulating optical element 901, able to controllably adjust a polarization distribution by controlling the temperature of the plate 901.
- the synthetic quartz For a 90° rotation of the polarization plane the synthetic quartz should be at least 278.5 ⁇ m thick and for 180° at least 557.1 ⁇ m, for 270° the thickness should be 835.5 ⁇ m and for a 360° rotation of the polarization the thickness is 1.114 mm.
- the manufacturing tolerances regarding thickness are about ⁇ 2 ⁇ m. Thus the manufacturing tolerance results in an inaccuracy of the angle of the polarization plane of the light which passes the plate of about ⁇ 0.64° at about 21.6°C and 193 nm.
- the temperature control of the plate 901 can be done by closed-loop or open-loop control, using a temperature sensing device with at least one temperature sensor 902, 903 for determining the temperature of the plate 901 (or providing a temperature sensor value which is representative or equal to the temperature and/or the temperature distribution of the polarization-modulating optical element) , at least a heater 904, 905, preferably comprising an infrared heater, for heating the plate by infrared radiation 906, and a control circuit 910 for controlling the at least one heater 904, 905.
- a infrared sensitive CCD-element with a projection optics may be used, wherein the projection optics images at least a part of the plate 901 onto the CCD-element such that a temperature profile of the viewed part of the plate 901 can be determined by the analysis of the CCD-element signals.
- the control circuit 910 may comprise a computer system 915 or may be connected to the computer or control system 915 of the microlithography projection system 833 (see Fig. 8) .
- T m i n /2+T m i n
- T max and T min' are the maximum and minimum temperatures of the plate 901 (or in general the polarization- manipulating optical element) .
- the heater or heating system (and also any cooling device like a Peltier element) is arranged such that it is not in the optical path of the microlithography projection system 833, or that it is not in the optical path of the light beam which is propagating through the optical system according to an embodiment of the present invention.
- the optical system with the polarization control system according to the present invention is used in a system with at least one additional optical element arranged between the polarization-modulating optical element and the predefined location in the optical system such that the light beam contacts the at least one additional optical element when propagating from the polarization- modulating optical element to the predefined location.
- the additional optical element preferably comprises a lens, a prism, a mirror, a refractive or a diffractive optical element or an optical element comprising linear birefringent material.
- the optical system according to the present invention may form a part of a microlithography projection system 833.
- the temperature of the polarization-manipulating optical element 901 corresponds to a predefined temperature profile.
- a temperature profile is achieved by using a plurality of infrared heaters 904, 905 to produce a radiation distribution across the optical element 901 which heats the optical element 901 in a controlled way with a control circuit as already described.
- a plurality of temperature sensors 902, 903 can be used for the control circuit 910. With this embodiment the polarization state in a field plane or pupil plane of the microlithography projection system 833 can be adjusted locally.
- the heater or heating elements 904, 905 may be replaced or supplemented by one or more Peltier-elements 907, 908.
- the Peltier-element or elements are preferably connected to the control circuit 910 such that a control by open and/or closed loop control is possible.
- the advantage of the Peltier-elements is that also a controlled cooling of the polarization-manipulating optical element 901 can be achieved. Heating and cooling the optical element 901 at the same time result in complex temperature distributions in the polarization-modulating optical element 901, which result in complex polarization distributions of the light 950 propagating e.g. through the microlithography projection system 833, after passing the element 901.
- other heating and cooling means than the ones mentioned above can be used to achieve a required temperature profile or a required temperature of the polarization- modulating optical element 901.
- the application of the plane plate 901 as polarization-modulating optical element 801 in the illumination system of a microlithography projection apparatus 833 is preferably in the pupil plane 845 and/or at positions between the light source unit 835 and the mentioned pupil plane 845.
- Applying the plane plate 901 at these locations has the advantage that the angle of incidence of the light which passes through the plate 901 and also passing through the microlithography projection apparatus is smaller than about 6° (100 mrad) .
- the influence of linear birefringence, caused by the plate 901 is very small such that the polarization of the light after passing the plate 901 is almost liner with negligible elliptical parts, if the light was linearly polarized before entering the plate 901.
- the state of the polarization of the light passed through the polarization-modulating element 901 or the optical system according to the present invention is measured.
- the polarization control system comprises a polarization measuring device providing a polarization value representative for or equal to the polarization or the polarization distribution of the light beam at the predetermined location in the optical system.
- the control circuit controls the at least one heating or cooling device dependent on the temperature sensor value and/or the polarization value by open or closed loop control.
- the measured state of polarization is compared with a required state and in the case that the measured state deviates more than a tolerable value, the temperature and/or the temperature distribution of the polarizing-modulating element like the plane plate 901 is changed such that the difference between the measured and the required state of polarization becomes smaller, and if possible such small that the difference is within a tolerable value.
- the measurement of the state of polarization is measured in-situ or with a separate special measurement, depending on the polarization measuring device 960.
- the polarization measuring device may be connected with the control circuit 910, such that depending on the measured polarization state values the heating means 904, 905 and/or 907, 908 are controlled heated and/or cooled such that the measured and the required state of polarization becomes smaller.
- the control can be done in open or closed loop modus .
- the plane plate 901 used as polarization-modulating optical element or being a part of such element is especially appropriate to correct orientations of polarization states of the passed light bundles.
- the plane plate 901 (comprising or consisting of optically active material) , used as a polarization-modulating optical element, is combined with a plate 971 (see Fig. 10) , comprising or consisting of linear birefringent material.
- a plate 971 (see Fig. 10) , comprising or consisting of linear birefringent material.
- the orientation and the phase of the passing light bundle 950 can be subjected such that e.g. a plane polarized light bundle becomes elliptically polarized after passing both plane plates 901 and 971, or vice versa.
- at least one plate 901 or 971 is controlled regarding its temperature and/or temperature distribution as described in connection with Fig. 9.
- the sequence of the plates 901 and 971 may be changed such that the passing light bundles are first passing through the plate 971, comprising or consisting of linear birefringent material, and than through the plate 901, comprising or consisting of optical active material, or vice versa.
- both plates are consecutively arranged along the optical axis OA of the system.
- more than one plate comprising or consisting of linear birefringent material, and/or more than one plate comprising or consisting of optical active material may be used to manipulate the state of polarization of the passing light bundles.
- a plane plate 971, or 901 may be exchanged by a liquid cell or cuvette containing optically active material.
- plane plates 971 comprising or consisting of linear birefringent material, and plate 901, comprising or consisting of optical active material, can be arranged such that at least one other optical element 981 is placed between these plane plates.
- This element 981 can be for example a lens, a diffractive or refractive optical element, a mirror or an additional plane plate.
- the temperature compensation makes use of the realization that for synthetic quartz there exist one quartz material with a clockwise and one quartz material with a counterclockwise optical activity (R-quartz and L-quartz) . Both, the clockwise and the counterclockwise optical activities are almost equal in magnitude regarding the respective specific rotations ⁇ . The difference of the specific rotations is less than 0,3%. Whether the synthetic quartz has clockwise (R-quartz) or counterclockwise (L-quartz) optical activity dependents on the seed-crystal which is used in the manufacturing process of the synthetic quartz.
- R- and L-quartz can be combined for producing a thermal or temperature compensated polarization-modulating optical element 911 as shown in Fig. 11.
- a temperature compensated polarization-modulating optical element 911 is equivalent to a plane plate of synthetic quartz of thickness d.
- two plane plates 921 and 931 are arranged behind each other in the direction 950 of the light which is propagating through the optical system which comprises the temperature compensated polarization-modulating optical element 911.
- any structured polarization-modulating optical element made of R- or L-quartz like e.g. the elements as described in connection with Figures 3 and 4a can be combined with a plane plate of the respective other quartz type (L- or R-quartz) such that the combined system 911 will have a reduced temperature dependence regarding the change of the polarization.
- a structured optical element made of the respective other quartz type may be used such that in Fig. 11 the shown plates 921 and 931 can be structured polarization-modulating optical elements as mentioned in this specification, having specific rotations of opposite signs, changing the state of polarization clockwise and counterclockwise.
- the present invention also relates to an optical system comprising an optical axis OA or a preferred direction 950 given by the direction of a light beam propagating through the optical system.
- the optical system comprising a temperature compensated polarization-modulating optical element 911 described by coordinates of a coordinate system, wherein one preferred coordinate of the coordinate system is parallel to the optical axis OA or parallel to said preferred direction 950.
- the temperature compensated polarization-modulating optical element 911 comprises a first 921 and a second 931 polarization-modulating optical element.
- the first and/or the second polarization-modulating optical element comprising solid and/or liquid optically active material and a profile of effective optical thickness, wherein the effective optical thickness varies at least as a function of one coordinate different from the preferred coordinate of the coordinate system.
- the first 921 and/or the second 931 polarization-modulating optical element comprises solid and/or liquid optically active material, wherein the effective optical thickness is constant as a function of at least one coordinate different from the preferred coordinate of the coordinate system.
- the first and the second polarization-modulating optical elements 921, 931 comprise optically active materials with specific rotations of opposite signs, or the first polarization- modulating optical element comprises optically active material with a specific rotation of opposite sign compared to the optically active material of the second polarization- modulating optical element.
- the absolute value of the difference of the first and the second thickness of the first and second plate is smaller than the thickness of the smaller plate.
- a polarization-modulating element comprises an optically active and/or optically inactive material component subjected to a magnetic field such that there is a field component of the magnetic field along the direction of the propagation of the light beam through the polarization-modulating element.
- optical active material component may be construed as described above. However, also optical inactive materials can be used, having the same or similar structures as described in connection with the optical active materials.
- the application of a magnetic field will also change the polarization state of the light passing through the optical active and/or optical inactive material due to the Faraday-effect, and the polarization state can be controlled by the magnetic field.
- polarization-modulating optical element or for the optical systems according to the present invention are described in this application. Further, also additional embodiments of polarization-modulating optical elements or optical systems according to the present invention may be obtained by exchanging and/or combining individual features and/or characteristics of the individual embodiments described in the present application.
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Abstract
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Priority Applications (26)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020117024708A KR101295438B1 (en) | 2004-01-16 | 2005-01-14 | Polarization-modulating optical element |
US10/580,698 US8279524B2 (en) | 2004-01-16 | 2005-01-14 | Polarization-modulating optical element |
KR1020127001214A KR101295439B1 (en) | 2004-01-16 | 2005-01-14 | Polarization-modulating optical element |
KR1020117024707A KR101099847B1 (en) | 2004-01-16 | 2005-01-14 | Polarization-modulating optical element |
AT05706888T ATE539383T1 (en) | 2004-01-16 | 2005-01-14 | PROJECTION SYSTEM WITH A POLARIZATION MODULATING OPTICAL ELEMENT OF VARIABLE THICKNESS |
CN2005800022419A CN1910522B (en) | 2004-01-16 | 2005-01-14 | Polarization-modulating optical element |
KR1020117024702A KR101230757B1 (en) | 2004-01-16 | 2005-01-14 | Polarization-modulating optical element |
KR1020117024706A KR101099913B1 (en) | 2004-01-16 | 2005-01-14 | Polarization-modulating optical element |
JP2006548272A JP4958562B2 (en) | 2004-01-16 | 2005-01-14 | Polarization modulation optical element |
KR1020127016368A KR101233879B1 (en) | 2004-01-16 | 2005-01-14 | Polarization-modulating optical element |
EP05706888A EP1716457B9 (en) | 2004-01-16 | 2005-01-14 | Projection system with a polarization-modulating element having a variable thickness profile |
KR1020067010502A KR101165862B1 (en) | 2004-01-16 | 2005-01-14 | Polarization-modulating optical element |
US11/440,479 US8270077B2 (en) | 2004-01-16 | 2006-05-25 | Polarization-modulating optical element |
US11/440,475 US20070019179A1 (en) | 2004-01-16 | 2006-05-25 | Polarization-modulating optical element |
US12/200,068 US8861084B2 (en) | 2004-01-16 | 2008-08-28 | Polarization-modulating optical element |
US12/201,767 US8482717B2 (en) | 2004-01-16 | 2008-08-29 | Polarization-modulating optical element |
US12/205,572 US8320043B2 (en) | 2004-01-16 | 2008-09-05 | Illumination apparatus for microlithographyprojection system including polarization-modulating optical element |
US12/607,438 US8259393B2 (en) | 2004-01-16 | 2009-10-28 | Polarization-modulating optical element |
US12/729,948 US8289623B2 (en) | 2004-01-16 | 2010-03-23 | Polarization-modulating optical element |
US12/814,269 US20110188019A1 (en) | 2004-01-16 | 2010-06-11 | Polarization-modulating optical element |
US13/800,607 US8711479B2 (en) | 2004-01-16 | 2013-03-13 | Illumination apparatus for microlithography projection system including polarization-modulating optical element |
US13/933,159 US9581911B2 (en) | 2004-01-16 | 2013-07-02 | Polarization-modulating optical element |
US14/108,428 US9316772B2 (en) | 2004-01-16 | 2013-12-17 | Producing polarization-modulating optical element for microlithography system |
US15/383,136 US20170102622A1 (en) | 2004-01-16 | 2016-12-19 | Polarization-modulating optical element |
US15/667,155 US20170329233A1 (en) | 2004-01-16 | 2017-08-02 | Polarization-modulating optical element |
US15/997,193 US20190094704A1 (en) | 2004-01-16 | 2018-06-04 | Polarization-modulating optical element |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53732704P | 2004-01-16 | 2004-01-16 | |
US60/537,327 | 2004-01-16 |
Related Child Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/580,698 A-371-Of-International US8279524B2 (en) | 2004-01-16 | 2005-01-14 | Polarization-modulating optical element |
US11/440,479 Continuation-In-Part US8270077B2 (en) | 2004-01-16 | 2006-05-25 | Polarization-modulating optical element |
US11/440,475 Continuation-In-Part US20070019179A1 (en) | 2004-01-16 | 2006-05-25 | Polarization-modulating optical element |
US12/200,068 Continuation US8861084B2 (en) | 2004-01-16 | 2008-08-28 | Polarization-modulating optical element |
US12/205,572 Continuation US8320043B2 (en) | 2004-01-16 | 2008-09-05 | Illumination apparatus for microlithographyprojection system including polarization-modulating optical element |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005069081A2 true WO2005069081A2 (en) | 2005-07-28 |
WO2005069081A3 WO2005069081A3 (en) | 2005-11-10 |
Family
ID=34794448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2005/000320 WO2005069081A2 (en) | 2004-01-16 | 2005-01-14 | Polarization-modulating optical element |
Country Status (7)
Country | Link |
---|---|
US (6) | US8279524B2 (en) |
EP (1) | EP1716457B9 (en) |
JP (8) | JP4958562B2 (en) |
KR (7) | KR101165862B1 (en) |
CN (5) | CN101793993B (en) |
AT (1) | ATE539383T1 (en) |
WO (1) | WO2005069081A2 (en) |
Cited By (128)
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EP1720047A1 (en) * | 2004-02-06 | 2006-11-08 | Nikon Corporation | Polarization conversion element, lighting optical device, exposure system, and exposure method |
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