WO2005055299A1 - 半導体チップの製造方法 - Google Patents
半導体チップの製造方法 Download PDFInfo
- Publication number
- WO2005055299A1 WO2005055299A1 PCT/JP2004/017955 JP2004017955W WO2005055299A1 WO 2005055299 A1 WO2005055299 A1 WO 2005055299A1 JP 2004017955 W JP2004017955 W JP 2004017955W WO 2005055299 A1 WO2005055299 A1 WO 2005055299A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor chip
- dicing
- adhesive tape
- light
- semiconductor
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
Definitions
- the present invention relates to a semiconductor chip manufacturing method capable of obtaining a semiconductor chip with high production efficiency without breaking.
- Semiconductor chips such as ICs and LSIs are usually formed by slicing a high-purity rod-shaped semiconductor single crystal or the like into a semiconductor wafer, and then forming a predetermined circuit pattern on the surface of the semiconductor wafer using a photoresist. Then, the back surface of the semiconductor wafer is ground by a grinder, the thickness is reduced to about 100 to 300 m, and finally, the wafer is diced and formed into chips.
- Patent Document 1 discloses a method of using a grinding apparatus having a plurality of gantry axes to grind a semiconductor wafer thin with at least one gantry axis from the back side of a semiconductor wafer.
- a semiconductor wafer grinding method for simultaneously cutting and separating a semiconductor wafer into a rectangular shape with at least one gantry axis has been disclosed. However, even in such a method, the semiconductor wafer may be misaligned. Adhesive tapes for dicing are used to prevent this.
- a dicing adhesive tape for fixing a semiconductor wafer is required to have a high adhesive strength.
- the adhesive strength of the dicing adhesive tape is set to be high, it becomes difficult to peel the semiconductor chip having the dicing adhesive tape strength, and the semiconductor wafer is damaged when picked up by a needle or the like. There was a problem.
- a method using a curable pressure-sensitive adhesive as the pressure-sensitive adhesive for a dicing pressure-sensitive adhesive tape Had been done. According to this method, after dicing by fixing a semiconductor wafer with a relatively high adhesive strength, the adhesive is cured to reduce the adhesive strength, and then the obtained semiconductor chip is bonded to a dicing adhesive. Tape force can also be peeled off. Even if a curable pressure-sensitive adhesive is used, the change in the pressure-sensitive adhesive is small, so that the adhesive force is high enough to prevent misalignment of the semiconductor wafer during dicing. In addition, since the adhesive strength after curing does not decrease so much when it is added, it was also difficult to pick up the semiconductor chip without damaging it when pushing up with a dollar or the like.
- Patent Document 1 Japanese Patent Application Laid-Open No. 7-78793
- the present invention generates a gas by irradiating light to a semiconductor wafer on which a circuit is formed.
- a method for manufacturing a semiconductor chip having:
- an adhesive tape for dicing having an adhesive layer containing a gas generating agent that generates gas by irradiating light is attached to a semiconductor wafer on which a circuit is formed. It has a tape sticking step.
- a wafer prepared by a conventionally known method can be used as the semiconductor wafer on which the circuit is formed.
- a photoresist is used on the surface of a wafer obtained by slicing a semiconductor single crystal or the like. After forming a circuit pattern by grinding, the substrate is ground to a predetermined thickness.
- the thickness of the semiconductor wafer is not particularly limited, and the thickness of the conventional semiconductor wafer is about 100 to 300 m, and a thickness of 50 m or less can be used.
- the method for manufacturing a semiconductor chip of the present invention is particularly suitable for manufacturing semiconductor chips from a semiconductor wafer having a thickness of 50 m or less with high productivity.
- the dicing pressure-sensitive adhesive tape has a pressure-sensitive adhesive layer containing a gas generating agent that generates a gas when irradiated with light.
- a gas generating agent that generates a gas when irradiated with light.
- the gas generating agent that generates a gas upon irradiation with light is not particularly limited, but, for example, an azoid conjugate and an azido conjugate are suitably used.
- azo compound examples include 2,2'-azobis (N-cyclohexyl-2-methylpropionamide) and 2,2, azobis [N- (2-methylpropyl) -2-methylpropionamide
- azoids are irradiated with light, in particular, ultraviolet light with a wavelength of about 365 nm. Generates nitrogen gas.
- the above-mentioned azozi conjugate has a 10-hour half-life temperature of 80 ° C or more. If the 10-hour half-life temperature is less than 80 ° C, the pressure-sensitive adhesive tape of the present invention may decompose due to foaming when forming a pressure-sensitive adhesive layer by casting and drying, or causing a decomposition reaction over time. Residue may bleed out or generate gas over time, causing a lift at the interface with the adherend. If the 10-hour half-life temperature is 80 ° C or higher, it is excellent in heat resistance, so that it can be used at high temperatures and can be stably stored.
- Examples of the azoid conjugate having a 10-hour half-life temperature of 80 ° C or more include an azo amide conjugate represented by the following general formula (1).
- the azoamido conjugate represented by the following general formula (1) is excellent in heat resistance and excellent in solubility in an adhesive polymer such as an alkyl acrylate polymer described later, It is possible that the particles do not exist in the pressure-sensitive adhesive layer.
- R 1 and R 2 each represent a lower alkyl group, and R 3 represents a saturated alkyl group having 2 or more carbon atoms. Note that R 1 and R 2 may be the same or different.
- azide compound examples include glycidyl azidoborimer and the like obtained by ring-opening polymerization of 3-azidomethyl-3-methyloxetane, terephthalazide, p-tert-butylbenzazide; 3-azidomethyl-3-methyloxetane.
- Polymers having an azide group are exemplified. These azide conjugates generate nitrogen gas by irradiating light, especially ultraviolet rays having a wavelength of about 365 nm.
- the azide compound has a problem that it is difficult to handle because it is easily decomposed and gives off nitrogen gas even when subjected to impact. Further, once the azide compound starts to decompose, it undergoes a chain reaction and explosively releases nitrogen gas, which cannot be controlled, so that the adherend may be damaged by the explosively generated nitrogen gas. There is also a problem.
- the amount of the above-mentioned azide conjugate is also limited due to such problematic power, but a sufficient effect may not be obtained with the limited amount.
- the above-mentioned azoi conjugate is very easy to handle because it does not generate gas by impact unlike an azide compound.
- the gas generation can be interrupted by interrupting the light irradiation without damaging the adherend.
- the control of is possible. Therefore, it is more preferable to use an azo conjugate as the gas generating agent.
- the gas generating agent is dissolved in the pressure-sensitive adhesive layer. Since the gas generating agent is dissolved in the pressure-sensitive adhesive layer, the gas generated by the gas generating force when irradiated with light is efficiently released to the outside of the pressure-sensitive adhesive layer. If the gas generating agent is present as particles in the pressure-sensitive adhesive layer, locally generated gas may cause the pressure-sensitive adhesive layer to foam, and the gas may be released outside the pressure-sensitive adhesive layer. Furthermore, when light is irradiated as a stimulus to generate gas, light is scattered at the particle interface, resulting in low gas generation efficiency. The surface smoothness of the pressure-sensitive adhesive layer may deteriorate. The dissolution of the gas generating agent in the pressure-sensitive adhesive layer can be confirmed by observing no particles of the gas generating agent when observing the pressure-sensitive adhesive layer with an electron microscope.
- a gas generating agent that is soluble in the adhesive forming the pressure-sensitive adhesive layer may be selected.
- the gas generating agent can be finely dispersed in the adhesive layer. It is preferable to let them.
- the gas generating agent is fine particles.
- these fine particles are required by using, for example, a disperser or a kneading device. It is preferable to obtain finer fine particles according to the conditions. That is, it is more preferable to disperse the pressure-sensitive adhesive layer to a state where it cannot be confirmed when the pressure-sensitive adhesive layer is observed with an electron microscope.
- the gas generated from the gas generating agent is released to the outside of the pressure-sensitive adhesive layer.
- the gas generated from the gas generating agent also peels off at least a part of the adhesive surface of the semiconductor chip and lowers the adhesive strength. Can be peeled off.
- the pressure-sensitive adhesive layer is entirely foamed by the gas generated from the gas generating agent, and the effect of lowering the adhesive strength is sufficient. And adhesive residue may be left on the semiconductor chip. If the adhesive residue is not generated on the semiconductor chip, a part of the gas generated from the gas generating agent may dissolve into the adhesive layer or may exist as bubbles in the adhesive layer. I don't know how to do it! / ⁇ .
- the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer is preferably one that crosslinks by stimulation to increase the elastic modulus.
- an adhesive by giving a stimulus at the time of peeling to increase the elastic modulus, the adhesive force is reduced and peeling can be made easier.
- crosslinking is performed prior to the generation of gas at the time of peeling, the elastic modulus of the entire pressure-sensitive adhesive layer will increase, and if gas is generated from the gas generating agent in a hardened cured product with an increased elastic modulus, it will be generated. And Most of the released gas is released to the outside, and the released gas peels off at least a part of the bonding surface of the adhesive layer of the semiconductor chip, thereby reducing the bonding strength.
- the stimulus for crosslinking the pressure-sensitive adhesive may be the same as or different from the stimulus for generating a gas from the gas generating agent. If the stimulus is different, a stimulus to crosslink the cross-linking component is provided before the stimulus to generate gas from the gas generating agent at the time of peeling.
- Examples of such an adhesive include, for example, a polymerizable polymer of alkyl acrylate type and Z or alkyl methacrylate type having a radical polymerizable unsaturated bond in a molecule, and a radical polymerizable polymer.
- Photocurable pressure-sensitive adhesives containing, as the main component, a water-soluble polyfunctional oligomer or monomer and, if necessary, a photopolymerization initiator, or acrylic acid having a radically polymerizable unsaturated bond in the molecule.
- thermosetting pressure-sensitive adhesive containing a polymerizable polymer of alkyl ester type and Z or alkyl ester of methacrylic acid and a radically polymerizable polyfunctional oligomer or monomer as main components and containing a thermal polymerization initiator are mentioned.
- the pressure-sensitive adhesive layer formed of such a post-curing pressure-sensitive adhesive such as a photocurable pressure-sensitive adhesive or a thermosetting pressure-sensitive adhesive can be uniformly and rapidly polymerized and crosslinked by light irradiation or heating. As a result, the increase in elastic modulus due to polymerization hardening becomes remarkable, and the adhesive strength is greatly reduced.
- a gas is generated from a gas generating agent in a hard cured product having an increased elastic modulus, most of the generated gas is released to the outside, and the released gas is discharged from the semiconductor chip at least on an adhesive surface of the adhesive. Partially peel off to reduce adhesive strength.
- a (meth) acrylic polymer having a functional group in a molecule (hereinafter, referred to as a (meth) acrylic polymer containing a functional group) is synthesized in advance, and the above-described polymer is included in the molecule. It can be obtained by reacting with a compound having a functional group that reacts with a functional group and a radical polymerizable unsaturated bond (hereinafter, referred to as a functional group-containing unsaturated compound).
- the functional group-containing (meth) acryl-based polymer is a polymer having tackiness at room temperature and has an alkyl group having a carbon number of usually 2 to 18 as in a general (meth) acryl-based polymer. Acrylate and Z or methacrylate as the main monomer, and a functional group-containing monomer, and if necessary, another modifying monomer copolymerizable therewith, in a conventional manner. It is obtained by polymerizing.
- the weight average molecular weight of the functional group-containing (meth) acrylic polymer is usually about 200,000 to 2,000,000.
- Examples of the functional group-containing monomer include a carboxy group-containing monomer such as acrylic acid and methacrylic acid; a hydroxyxyl group-containing monomer such as hydroxyethyl acrylate and hydroxyethyl methacrylate; glycidyl acrylate; Epoxy group-containing monomers such as glycidyl methacrylate; isocyanate group-containing monomers such as isocyanate acrylate and isocyanate ethyl methacrylate; and amino group-containing monomers such as aminoethyl acrylate and aminoethyl methacrylate.
- a carboxy group-containing monomer such as acrylic acid and methacrylic acid
- a hydroxyxyl group-containing monomer such as hydroxyethyl acrylate and hydroxyethyl methacrylate
- glycidyl acrylate Epoxy group-containing monomers such as glycidyl methacrylate
- isocyanate group-containing monomers
- Examples of the other copolymerizable modifying monomers include various monomers used in general (meth) acrylic polymers such as butyl acetate, Atari-tolyl, and styrene.
- the functional group-containing unsaturated compound to be reacted with the functional group-containing (meth) acrylic polymer includes the functional group-containing monomer described above according to the functional group of the functional group-containing (meth) acrylic polymer. Similar ones can be used. For example, when the functional group of the functional group-containing (meth) acrylic polymer is a carboxyl group, an epoxy group-containing monomer or an isocyanate group-containing monomer is used, and when the functional group is a hydroxyl group, an isocyanate group-containing monomer is used. When the functional group is an epoxy group, a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide is used. When the functional group is an amino group, an epoxy group-containing monomer is used.
- polyfunctional oligomer or monomer those having a molecular weight of 10,000 or less are preferable, and more preferably, the three-dimensional reticulation of the pressure-sensitive adhesive layer by heating or irradiation with light is efficiently performed. It has a molecular weight of 5,000 or less and has 2 to 20 radically polymerizable unsaturated bonds in the molecule.
- examples of such more preferred polyfunctional oligomers or monomers include, for example, trimethylolpropane triatalylate, tetramethylol methanetetraaphthalate, pentaerythritol triatalylate, pentaerythritol tetraatalylate, and dipentaerythritonolate.
- Examples thereof include monohydroxypentaatalylate, dipentaerythritonolhexaarylate, and the same metathalates as described above.
- These polyfunctional oligomers or monomers may be used alone or in combination of two or more.
- Examples of the photopolymerization initiator include those that are activated by irradiation with light having a wavelength of 250 to 800 nm.
- Acetophenone derivative compounds such as cetophenone; benzoin ether compounds such as benzoin propyl ether and benzoin isobutyl ether; ketal derivative compounds such as benzyl dimethyl ketal and acetophenone getyl ketal; phosphinoxide derivative compounds; —Cyclopentagenenyl) titanocene derivative conjugate, benzophenone, Michler's ketone, black thioxanthone, dodecylthioxanthone, dimethylthioxanthone, getylthioxanthone, ⁇ -hydroxycyclohexylphenyl ketone, 2-hydroxymethylphenyl Photoradical polymerization initiators such as propane and the like. These photopolymerization initiators may be used alone or in combination of two or more.
- the photopolymerization initiator when used, it is preferable to blend the photopolymerization initiator in an amount of 2 phr or more in order to prevent the postcurable pressure-sensitive adhesive from being inhibited from curing by oxygen.
- thermal polymerization initiator examples include those which generate an active radical which is decomposed by heat to initiate polymerization curing, and includes, for example, dicumyl peroxide, di-tert-butyl peroxide, and t-butyl peroxide.
- dicumyl peroxide di-tert-butyl peroxide
- t-butyl peroxide t-butyl peroxide
- thermal polymerization initiators commercially available ones are not particularly limited, but, for example, preferred are monobutyl D, perbutyl H, perbutyl P, and permenta H (all of which are manufactured by NOF Corporation). These thermal polymerization initiators may be used alone or in combination of two or more.
- the post-curable pressure-sensitive adhesive may be a general one such as an isocyanate-bonded compound, a melamine-bonded compound, or an epoxy-bonded compound, if desired, for the purpose of controlling the cohesive force of the pressure-sensitive adhesive.
- Various kinds of polyfunctional compounds to be blended in the pressure-sensitive adhesive may be appropriately blended.
- Known additives such as plasticizers, resins, surfactants, waxes, and fine particle fillers can also be added.
- the pressure-sensitive adhesive may be subjected to an antistatic treatment. If the dicing adhesive tape is charged by static electricity or the like, it will not be possible to pick up the self-peeled semiconductor chip, as described later, or it will attract fine particles floating in the air and adversely affect the manufacture of the semiconductor chip. There is.
- the method for performing the antistatic treatment on the pressure-sensitive adhesive is not particularly limited, and examples thereof include a method in which an ionic surfactant, metal fine particles, and the like are mixed in the pressure-sensitive adhesive. Above all, it is preferable to add metal fine particles or a polymer type ionic surfactant since it does not adversely affect the adhesive strength.
- a preferred lower limit of the adhesive strength of the pressure-sensitive adhesive layer to the semiconductor wafer before light irradiation is 0.5 N / 25 mm, and a preferred upper limit is 10 NZ25 mm. If less than 0.5 NZ25 mm, the adhesive force may be insufficient and the semiconductor wafer may move during dicing.If it exceeds 10 N / 25 mm, the adhesive force is reduced to such a degree that it can be picked up even when irradiated with light. May not.
- a preferred lower limit of the shear modulus at 23 ° C of the pressure-sensitive adhesive layer before light irradiation is 5 x 10 4 Pa. If the pressure is less than 5 ⁇ 10 4 Pa, the semiconductor wafer may not be diced accurately.
- the thickness of the pressure-sensitive adhesive layer is not particularly limited, but a preferable lower limit is 3 ⁇ m and a preferable upper limit is 50 ⁇ m. If it is less than 3 ⁇ m, the adhesive strength may be insufficient and chipping may occur at the time of dicing.If it exceeds 50 / zm, the adhesive force is too high, and the peelability will decrease, resulting in good peeling. May not be possible.
- the pressure-sensitive adhesive tape for dicing is preferably a single-sided pressure-sensitive adhesive tape having a pressure-sensitive adhesive layer formed on one side of a substrate.
- the substrate is not particularly limited as long as it transmits or transmits light.
- a transparent material such as polyacryl, polyolefin, polycarbonate, vinyl chloride, ABS, polyethylene terephthalate (PET), nylon, polyurethane, and polyimide can be used.
- PET polyethylene terephthalate
- nylon polyurethane
- polyimide examples thereof include a sheet made of natural resin, a sheet having a network-like structure, and a sheet having holes.
- Various forms of the above-mentioned base material can be selected in accordance with a peeling step and a pickup step described later.
- the base material when the dicing pressure-sensitive adhesive tape is to be etaspand in the pickup step described later, the base material should have a flexible layer having a 20% elongation load at a film thickness of 100 m of 25 NZ25 mm or less. Is preferred.
- the pressure-sensitive adhesive tape for dicing can be easily expanded. If the 20% elongation load of the soft layer exceeds 25 NZ25 mm, it is necessary to apply strong tension to expand the dicing adhesive tape, which results in an increase in the size of the equipment and unevenness of the tension resulting in a misalignment of the semiconductor chip. Sometimes.
- the substrate When the substrate has the flexible layer, the substrate further has a highly rigid layer between the pressure-sensitive adhesive layer and the flexible layer in order to further enhance self-peeling by light irradiation. You may.
- the high rigidity layer has a 20% elongation load of 100 NZ25 mm or more when the film thickness is 100 ⁇ m.
- the upper limit of the 20% elongation load of the high-rigidity layer is not particularly limited, but it is necessary that the high-rigidity layer can be cut by a dicing machine.
- a preferable lower limit of the thickness of the high rigidity layer is 5 ⁇ m, and a preferable upper limit is 30 ⁇ m.
- the same effect can be obtained by providing a highly rigid reinforcing plate on the surface opposite to the pressure-sensitive adhesive side to support the flexible layer.
- the reinforcing plate is not particularly limited as long as it can transmit or transmit light, and examples thereof include a glass plate, an acrylic plate, and a PET plate. This support plate may be particularly adhered as long as it comes into contact with the flexible layer. Further, for example, in the case where the semiconductor chip is self-peeled by irradiating high-intensity ultraviolet rays in a peeling step described later, the adhesive tape for dicing does not have to be metaspanned in the pickup step.
- a material having high performance of preventing deformation of the wafer and having high rigidity enough to be regarded as a reinforcing plate may be used as the base material.
- a substrate having a 20% elongation load force S 100NZ25mm or more at a thickness of 100 ⁇ m because the self-peeling performance is improved!
- the base material is preferably subjected to an antistatic treatment.
- the base material is static electricity etc.
- the self-peeled semiconductor chip may not be able to be picked up, or may attract fine particles and the like floating in the air, which may adversely affect the manufacture of the semiconductor chip.
- the method of performing the antistatic treatment is not particularly limited, and examples thereof include a method of including an antistatic treatment agent in a base material and a method of applying an antistatic treatment agent to the surface of a base material.
- the antistatic treatment agent is not particularly limited, and examples thereof include a transparent conductive plasticizer, a surfactant, and fine metal particles.
- the thickness of the base material is not particularly limited, but a preferable lower limit is 30 m, and a preferable upper limit is 200 ⁇ m. If it is less than 30 ⁇ m, the self-supporting of the dicing pressure-sensitive adhesive tape will be insufficient, and it may be difficult to perform the ringing.If it exceeds 200 / zm, problems may occur when the adhesive tape for dicing is peeled off. There is.
- the method for producing the pressure-sensitive adhesive tape for dicing is not particularly limited.
- a pressure-sensitive adhesive or the like containing the gas generating agent or the like is applied to the surface of the base material by using a doctor knife, a spin coater, or the like. Coating methods and the like can be mentioned.
- the adhesive tape for dicing is usually attached to the surface of the semiconductor wafer on which the circuits are formed, on which the circuits are not formed.
- the above dicing adhesive tape may be attached to the side where the circuit is formed from the viewpoint of surface protection during dicing. .
- the force required to perform so-called back dicing In the manufacturing method of the method for manufacturing a semiconductor chip of the present invention, the semiconductor chip obtained as described below is taken up by the needleless big-up method. There is no damage to the circuit when picking up as in the method of (1).
- the method for manufacturing a semiconductor chip of the present invention has a dicing step of dicing the wafer to which the above-mentioned dicing pressure-sensitive adhesive tape has been attached, and dividing the wafer into individual semiconductor chips.
- the dicing method is not particularly limited, and for example, a conventionally known method of cutting and separating using ganlite or the like can be used.
- the dicing adhesive tape attached to each of the divided semiconductor chips is irradiated with light to peel off at least a part of the dicing adhesive tape with a semiconductor chip force. It has a peeling step. Since the pressure-sensitive adhesive tape for dicing contains the gas generating agent as described above, the generated gas is released to the interface between the pressure-sensitive adhesive layer and the semiconductor chip by irradiating light, and at least a part of the bonding surface is bonded. Since the peeling adhesive strength is reduced, the semiconductor chip can be easily peeled.
- the present inventors devised a method of light irradiation in the above-mentioned peeling step, and realized a semiconductor by a needleless pickup method without using a dollar for a pickup step described later.
- the present inventors have found that the chip can be easily picked up, and that the semiconductor chip can be prevented from being damaged or chipped by the impact at the time of pickup, and the present invention has been completed.
- the removing step if the irradiation intensity at a wavelength 365nm is irradiated with light which is on 500MWZcm 2 or more, or, immediately before sucking the semiconductor chip using suction means, or a semiconductor chip using suction means By irradiating light in a sucked state, a pickup by a needleless pickup method can be realized.
- the one-dollar-less pickup method means a method other than a method in which a semiconductor chip is pushed up using a needle to perform pickup, for example, a suction means such as a suction pad or a liquid such as water is attached.
- a suction means using a suction jig and a means for picking up and picking up a chip with tweezers having a buffer mechanism.
- a preferable upper limit of the irradiation intensity at the wavelength of 365 nm is 10,000 mW / cm 2 . If it exceeds 10,000 mWZcm 2 , the cost required for the irradiation device and the like will increase significantly, which is not practical. Considering costs, etc., 5000 mW / It is considered that about cm 2 is a practical upper limit.
- Such high-intensity ultraviolet rays may be irradiated with ordinary light source power such as an ultraviolet lamp, but it is usually difficult to achieve such high intensity.
- high-intensity ultraviolet rays can be obtained by a method of condensing ultraviolet rays that also emit light.
- condensing means for example, a method using a condensing mirror or a condensing lens can be mentioned.
- the present inventors have further studied diligently, and as a result, when irradiating ultraviolet light having a constant irradiation intensity at a wavelength of 365 nm as light so that the irradiation intensity and the irradiation time satisfy a certain relation, We have found that semiconductor chips can be easily picked up by the one-dollar-less pick-up method without using one dollar, and that no contamination of semiconductor chips occurs.
- the irradiation intensity X (mWZcm 2 ; X is 500—100OOmWZcm 2 ) and the irradiation time Y (second) at a wavelength of 365 nm are as follows: It is preferable to irradiate ultraviolet rays so as to satisfy both the relations expressed by the formula (1) and the following formula (2).
- the irradiation intensity at a wavelength of 365 nm is set to 500 to satisfy the relationship shown in the above equation (1). Irradiation with ultraviolet light of 1OOOOmWZcm 2 does not cause the generation of oily decomposition products derived from the components contained in the pressure-sensitive adhesive layer and does not contaminate the semiconductor chip.
- the semiconductor chip can be easily picked up by the needleless pickup method without using one dollar, and It is possible to achieve both the prevention of contamination of the semiconductor chip by the decomposition product.
- the semiconductor chip may not be able to be reliably picked up by the needleless pick-up method. If the above expression (1) is not satisfied due to a long time, the semiconductor chip may be contaminated.
- the time required for light irradiation and the time required for pickup can be overlapped, which further increases production speed. Can be improved.
- the light irradiation power takes a long time to suck the semiconductor chip using the suction means, irregular peeling may occur and unpeeled parts may occur. It is preferable to irradiate the light.
- the method of setting the "start of light irradiation" and the completion of the light irradiation and the irradiation time are not particularly limited. For example, in the method of turning on and off the power of the light (UV) irradiation device main body, until the lamp illuminance stabilizes. Because it takes time, it is preferable to provide a shutter mechanism in the light irradiation device. By providing the shutter mechanism in the light irradiation device, stable light irradiation can be started. Completion and irradiation time can be controlled.
- the whole of the plurality of divided semiconductor chips may be irradiated with light all at once.
- the individual semiconductor chips are sequentially irradiated with light to perform peeling.
- Simultaneously irradiating light causes all of the semiconductor chips to self-peel at least partially, so moving the entire semiconductor chip to sequentially pick up individual chips will cause individual chips to come apart. However, this may cause a pick-up failure, which may lower productivity.
- the light is irradiated by adjusting the irradiation area so that the entire surface of the semiconductor chip is irradiated with the light within a range where the adjacent semiconductor chip is not irradiated with the light. That is, the light is applied to the inside of the outline of the groove formed by dicing.
- the light guides light emitted from a light source to an adhesive tape for dicing attached to each semiconductor chip. It is preferable that it is done.
- the light guiding method include a method using the above-mentioned condensed light and a method using one or a plurality of bundled optical fibers.
- the individual semiconductor chips are only separated by an extremely thin groove of about several tens of meters by dicing. In such a case, it is difficult to irradiate only the intended semiconductor chip with ultraviolet light and not to expose the adjacent semiconductor chip to ultraviolet light at all. Therefore, before the target semiconductor chip is irradiated with ultraviolet rays, the semiconductor chip has been exposed to a certain amount of ultraviolet rays when the semiconductor chip was irradiated with ultraviolet rays before that. Depending on the area occupied by the exposed portion, reliable peeling may not be performed even when the target semiconductor chip is irradiated with ultraviolet rays in the peeling step.
- the present inventors have conducted intensive studies and found that the irradiation intensity X (mWZcm 2 ) of the ultraviolet light to be irradiated on the target semiconductor chip and the irradiation intensity of the other semiconductor chip before the target semiconductor chip before irradiation were determined.
- the percentage of the area exposed to ultraviolet light, Y (%), is expressed by the following equation (3).
- the individual semiconductor chips and the adhesive tape for dicing can be surely peeled off, and it can be surely picked up by the one-dollar-less pickup method in the pickup process described later. I found it.
- each semiconductor chip and the adhesive tape for dicing are surely applied.
- the needle can be easily picked up by using a needleless pick-up method without using a needle, and the semiconductor chip may be damaged or chipped due to the impact at the time of pick-up. Can be prevented. If the above formula (3) is not satisfied, such self-peeling may not be achieved.
- the semiconductor chip is exposed to ultraviolet rays.
- the light applied to the entire surface of the semiconductor chip has a variation in the irradiation intensity within 20% of the average irradiation intensity, the generation of gas becomes uniform, which is particularly effective when self-peeling is desired.
- the light is applied to the inner side of the bonding surface where the area of the bonding part spread concentrically or rectangularly from the center position of the semiconductor chip is 5 to 30% of the total bonding area of the semiconductor chip.
- the average value of the irradiation intensity in the above is 40 to 70% of the average value of the irradiation intensity in the portion other than the inside of the bonding surface.
- the average value of the irradiation intensity at the inside of the bonding surface where the area of the bonding portion where the light is spread concentrically or rectangularly with the center position force of the semiconductor chip being 5 to 30% of the total bonding area of the semiconductor chip is as described above.
- the gas generation at the center of the semiconductor chip will be delayed, and the semiconductor The displacement of the chip can be prevented.
- the peeling step may be performed in an atmosphere of an inert gas such as nitrogen, argon, or helium.
- an inert gas such as nitrogen, argon, or helium.
- the peeling step it is preferable to control the temperature so that the temperature of the dicing pressure-sensitive adhesive tape at the time of generating gas by light irradiation is 50 ° C or less. If the temperature of the pressure-sensitive adhesive tape for dicing is higher than 50 ° C, the flexibility of the pressure-sensitive adhesive tape for dicing increases, and the adhesiveness to the semiconductor chip is increased, which may cause peeling.
- the dicing pressure-sensitive adhesive tape may be heated to a high temperature in the peeling process, for example, when high-intensity light is irradiated, a heat ray included in the light may be considered.
- Examples of methods for avoiding the rise in the temperature of the dicing pressure-sensitive adhesive tape include a method of removing heat rays irradiated to the dicing pressure-sensitive adhesive tape using a filter that cuts heat rays, and a method of cooling the dicing pressure-sensitive adhesive tape by blowing air from outside. And the like.
- the method for manufacturing a semiconductor chip of the present invention includes a pickup step of picking up the semiconductor chip by a one-dollar-less pickup method.
- the needleless pickup method is a pickup method that does not use a dollar. According to such a needleless pickup method, a semiconductor chip can be safely picked up without giving an impact. Further, according to the needleless pickup method, even if the pickup speed is increased, the semiconductor chip is not damaged, so that it is possible to greatly improve productivity.
- the semiconductor chip when the semiconductor chip is irradiated with an ultraviolet ray having an illuminance at a wavelength of 365 nm of 500 mWZcm 2 or more, the semiconductor chip is self-peeled from the dicing adhesive tape. Suction of suction pads etc. without pushing up with one dollar The semiconductor chip can be easily picked up only by suction using means.
- the suction pad or the like does not have to be pushed up by one dollar.
- the semiconductor chip can be easily picked up simply by suctioning using the suction means of the above.
- the dicing adhesive tape may or may not be expanded as necessary. For example, when the spacing between individual semiconductor chips is very narrow or non-existent, the spacing increases the spacing between individual semiconductor chips, making it easier to pick up without touching adjacent semiconductor chips. . Further, if there is a sufficient space between the semiconductor chips after dicing, the semiconductor chips can be easily picked up without touching the semiconductor chips without expanding.
- dicing can be performed accurately without causing displacement or the like, and the diced semiconductor chip can be reduced by one dollar as in the conventional method. It does not push up-it picks up by the one dollar less pickup method, so it can be picked up safely without impacting the semiconductor chip. In addition, even if the pick-up speed is increased, the semiconductor chip is not damaged, so that the productivity can be greatly improved. Furthermore, in the case of manufacturing a semiconductor chip on which a circuit that is particularly susceptible to damage is formed, the circuit is formed. A semiconductor chip can be obtained without performing.
- a tape attaching step, a dicing step, a peeling step, and a pickup step are essential requirements.
- a semiconductor wafer or a semiconductor chip is transported or stored in a state of being attached to an adhesive tape, in which a series of these steps are not necessarily performed collectively at the same place. Even in such a case, it is important that the adhesive tape can be peeled off without damaging or contaminating the semiconductor wafer or the semiconductor chip.
- a gas is emitted by irradiating light.
- a method of peeling the adhesive tape, wherein a wavelength is applied to the semiconductor wafer or semiconductor chip attached to the adhesive tape.
- Irradiation intensity at 365 nm X (mWZc m 2 ; where X is 500-lOOOOmWZcm 2 ), irradiation time Y (second) and power Irradiate ultraviolet rays that satisfy both the relations shown in the following formulas (1) and (2)
- the same adhesive tape as the dicing adhesive tape in the method for producing a semiconductor chip of the present invention can be used as the adhesive tape in the adhesive tape peeling method of the present invention. This is the same as in the case of the chip manufacturing method.
- ADVANTAGE OF THE INVENTION According to the peeling method of the adhesive tape of this invention, the adhesive tape which stuck the semiconductor wafer or the semiconductor chip which does not damage or contaminates can be peeled.
- the following compounds were dissolved in ethyl acetate and polymerized by irradiation with ultraviolet rays to obtain an acrylic copolymer having a weight average molecular weight of 700,000.
- Ethyl acetate solution of adhesive (2) is applied to a 75 ⁇ m thick transparent polyethylene terephthalate (PET) film that has been corona-treated on one side so that the dry film thickness is about 15 m. And heated at 110 ° C for 5 minutes to dry the coating solution. The adhesive layer after drying showed tackiness in a dry state. Next, a PET film subjected to a release treatment was attached to the surface of the pressure-sensitive adhesive (2) layer. After that, curing was carried out at 40 ° C for 3 days to obtain an adhesive tape for dicing.
- PET transparent polyethylene terephthalate
- the obtained pressure-sensitive adhesive tape for dicing was adhered to a surface of a 50 m-thick silicon wafer on which a circuit was formed, on a side where no circuit was formed, at normal temperature and normal pressure.
- silicon wafer The semiconductor chip was obtained by dicing No. 5 mm x 5 mm.
- the obtained semiconductor chip of the semiconductor chip dicing adhesive tape is stuck is placed so that the upper surface, a high strength ultraviolet to irradiation at a wavelength of 365nm from the dicing pressure-sensitive adhesive tape side one thereof is 600MWZcm 2 1. Irradiated for 0 seconds. The ultraviolet irradiation was performed using a high-intensity ultraviolet irradiation device (Spot Cure, manufactured by Dashio Electric Co., Ltd.) that emits high-intensity ultraviolet light in a point-like manner from the tip of the optical fiber. By this ultraviolet irradiation, the semiconductor chip was self-peeled from the adhesive tape for dicing.
- a high strength ultraviolet to irradiation at a wavelength of 365nm from the dicing pressure-sensitive adhesive tape side one thereof is 600MWZcm 2 1.
- the semiconductor chip that was self-peeled and floated on the adhesive tape for dicing was adsorbed by a suction node and picked up.
- a semiconductor chip was manufactured in the same manner as in Example 1 except that high-intensity ultraviolet rays were irradiated for 0.5 seconds so that the illuminance at a wavelength of 365 nm became 100 mWZcm 2 .
- the dicing pressure-sensitive adhesive tape prepared in Example 1 was bonded to a surface of a silicon wafer having a thickness of 50 m on which a circuit was formed at normal temperature and normal pressure on a side surface of the silicon wafer. Next, the silicon wafer was diced into 5 mm ⁇ 5 mm to obtain semiconductor chips.
- the semiconductor chip to which the obtained dicing adhesive tape is attached is placed so that the semiconductor chip faces upward, and one of the semiconductor chips is suctioned by the suction pad. Irradiation was performed for 1.0 second with an ultraviolet ray so as to obtain 600 mWZcm 2 . When irradiating with ultraviolet rays, ultraviolet rays are emitted from the tip of the optical fiber. An ultraviolet irradiation device (spot cure, manufactured by Dashio Electric Co., Ltd.) that emits light in a point-like manner was used. By this ultraviolet irradiation, the semiconductor chip was peeled off by the adhesive tape for dicing, and could be picked up as it was.
- the adhesive tape for dicing prepared in Example 1 was bonded to a surface of a silicon wafer having a thickness of 50 m on which a circuit was formed at a normal temperature and a normal pressure on a side surface of the silicon wafer. Next, the silicon wafer was diced into 5 mm ⁇ 5 mm to obtain semiconductor chips.
- the resulting semiconductor chip to which the adhesive tape for dicing was attached was placed with the semiconductor chip facing upward, and ultraviolet light was irradiated from the adhesive tape for dicing 0.5 seconds before suction with a suction pad.
- the UV irradiation intensity was set to 600 mWZcm 2 at a wavelength of 365 nm, and the irradiation time was set to 1.0 second.
- the ultraviolet irradiation was performed by using an ultraviolet irradiation device (spot cure, manufactured by Dashio Electric Co., Ltd.) that emits the ultraviolet light in a point form from the tip of the optical fiber. By this ultraviolet irradiation, the semiconductor chip was peeled off by the adhesive tape for dicing, and could be picked up as it was.
- a circuit of a silicon wafer with a thickness of 50 m on which a circuit was formed was formed by using a commercially available dicing adhesive tape (Nippon Denden Eneru Earth Co., Elep Holder UE-110BJ) having an adhesive layer composed of a photo-curable adhesive. The other side was bonded at room temperature and pressure. Next, the silicon wafer was diced into 5 mm ⁇ 5 mm to obtain semiconductor chips.
- the semiconductor chip to which the obtained adhesive tape for dicing is attached is placed on the upper surface of the semiconductor chip. , And one of them was irradiated with ultraviolet light having an intensity of 100 mW for 5 seconds from the dicing adhesive tape side.
- the semiconductor chip was picked up by a pick-up method using a needle after the irradiation with ultraviolet light, because self-peeling by this ultraviolet irradiation could not be lifted even by suction with a suction pad.
- the dicing pressure-sensitive adhesive tape obtained in Example 1 was bonded to a surface of a silicon wafer having a thickness of 50 m on which a circuit was formed at a normal temperature and a normal pressure on a side surface of the silicon wafer. Next, the silicon wafer was diced into 5 mm ⁇ 5 mm to obtain semiconductor chips.
- the obtained semiconductor chip of the semiconductor chip dicing adhesive tape is stuck is placed so that the upper surface, a high strength ultraviolet to irradiation at a wavelength of 365nm from the dicing pressure-sensitive adhesive tape side one thereof is 300MWZcm 2 1. Irradiated for 0 seconds. The self-peeling by this ultraviolet irradiation did not take up even if it was sucked by a suction pad, so after the ultraviolet irradiation, the semiconductor chip was picked up by a pickup method using a needle.
- the dicing pressure-sensitive adhesive tape obtained in Example 1 was bonded to a surface of a silicon wafer having a thickness of 50 m on which a circuit was formed at a normal temperature and a normal pressure on a side surface of the silicon wafer. Next, the silicon wafer was diced into 5 mm ⁇ 5 mm to obtain semiconductor chips.
- the semiconductor chip to which the obtained adhesive tape for dicing is attached is placed on the upper surface of the semiconductor chip.
- illumination intensity definitive the wavelength 365nm is irradiated to the realm of 3mm diameter from the center of the high intensity ultraviolet light as the 600MWZcm 2, at the same time on its periphery Ultraviolet light having an irradiation intensity of 100 mWZcm 2 was irradiated for 1.0 seconds each.
- the semiconductor chip was picked up by a pick-up method using a needle because it was difficult for the ultraviolet light irradiation to exfoliate the peripheral part other than the center part even if it was sucked by a suction pad.
- the dicing pressure-sensitive adhesive tape obtained in Example 1 was bonded to a surface of a silicon wafer having a thickness of 50 m on which a circuit was formed at a normal temperature and a normal pressure on a side surface of the silicon wafer. Next, the silicon wafer was diced into 5 mm ⁇ 5 mm to obtain semiconductor chips.
- the semiconductor chip to which the obtained dicing adhesive tape is attached is placed so that the semiconductor chip is on the top surface.
- One of the two is centered on ultraviolet light with an irradiation intensity of 100 mWZcm2 at a wavelength of 365 nm from the dicing tape adhesive tape side.
- a 3 mm diameter area was irradiated from the part, and the surrounding area was simultaneously irradiated with high-intensity ultraviolet rays having an irradiation intensity of 600 mWZcm 2 for 1.0 seconds each.
- the pressure-sensitive adhesive tape for dicing obtained in Example 1 was bonded to a surface of a 50-m-thick silicon wafer on which the circuits were formed, on the side where the circuits were formed, at normal temperature and normal pressure. Next, the semiconductor wafer was diced (back dicing) to 5 mm ⁇ 5 mm from the side where the circuit was formed, to obtain a semiconductor chip.
- the obtained semiconductor chip of the semiconductor chip dicing adhesive tape is stuck is placed so that the upper surface, a high strength ultraviolet to irradiation at a wavelength of 365nm from the dicing pressure-sensitive adhesive tape side one thereof is 600MWZcm 2 1. Irradiated for 0 seconds. The ultraviolet irradiation was performed using a high-intensity ultraviolet irradiation device (Spot Cure, manufactured by Dashio Electric Co., Ltd.) that emits high-intensity ultraviolet light in a point-like manner from the tip of the optical fiber. By this ultraviolet irradiation, the semiconductor chip was self-peeled from the adhesive tape for dicing.
- a high strength ultraviolet to irradiation at a wavelength of 365nm from the dicing pressure-sensitive adhesive tape side one thereof is 600MWZcm 2 1.
- the semiconductor chip that was self-peeled and floated on the adhesive tape for dicing was adsorbed by a suction node and picked up.
- a commercially available pressure-sensitive adhesive tape for dicing having a pressure-sensitive adhesive layer made of light-curing pressure-sensitive adhesive (Nippon Denden ENE-TO, Elep Holder UE-110BJ) was used to mount a circuit-formed silicon 50 m thick.
- the wafer was bonded to the surface on which the circuit was formed at normal temperature and normal pressure.
- a semiconductor chip was obtained by dicing (reverse dicing) the silicon wafer to a size of 5 mm ⁇ 5 mm from the side where the circuit was formed.
- the resulting semiconductor chip to which the adhesive tape for dicing was attached was placed with the semiconductor chip facing upward, and one of the semiconductor chips was irradiated with ultraviolet light having an intensity of 100 mW for 5 seconds from the adhesive tape for dicing.
- the semiconductor chip was picked up by a pick-up method using a needle after the irradiation with ultraviolet light, because self-peeling by this ultraviolet irradiation could not be lifted even by suction with a suction pad.
- the dicing pressure-sensitive adhesive tape prepared in Example 1 was bonded to a surface of a silicon wafer having a thickness of 50 m on which a circuit was formed at normal temperature and normal pressure on a side surface of the silicon wafer. Next, the silicon wafer was diced into 5 mm ⁇ 5 mm to obtain semiconductor chips.
- the semiconductor chip to which the resulting dicing adhesive tape is attached is placed with the semiconductor chip facing upward, and one of the dicing adhesive tapes is irradiated with ultraviolet light from the dicing adhesive tape side in accordance with the combination of irradiation intensity and irradiation time shown in Table 1. did.
- a high-intensity ultraviolet irradiation device spot Cure, manufactured by Dashio Electric Co., Ltd.
- which emits high-intensity ultraviolet rays in a point-like manner from the tip of the optical fiber was used.
- the pick-up property by the needleless pickup method and the contamination of the obtained semiconductor chip were evaluated according to the following criteria.
- Table 2 shows the conformity with the formulas (1) and (2).
- the surface of the obtained semiconductor chip was visually evaluated using an optical microscope of 200 times magnification.
- the case where no attached matter was observed was evaluated as ⁇ , and the case where attached matter was observed was evaluated as X.
- the dicing pressure-sensitive adhesive tape prepared in Example 1 was bonded to a surface of a silicon wafer having a thickness of 50 m on which a circuit was formed at normal temperature and normal pressure on a side surface of the silicon wafer. Next, the silicon wafer was diced into 5 mm ⁇ 5 mm to obtain semiconductor chips.
- a semiconductor chip on which the obtained adhesive tape for dicing is attached is placed so that the semiconductor chip faces upward, and a high-intensity ultraviolet irradiation device in which high-intensity ultraviolet rays are emitted from the tip of an optical fiber to each semiconductor chip in a point-like manner.
- spot Cure manufactured by Dashio Electric Co., Ltd.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112004002162T DE112004002162T5 (de) | 2003-12-02 | 2004-12-02 | Verfahren zur Herstellung eines Halbleiterchips |
US10/577,442 US20070037364A1 (en) | 2003-12-02 | 2004-12-02 | Method for manufacturing semiconductor chip |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003403431 | 2003-12-02 | ||
JP2003-403431 | 2003-12-02 | ||
JP2004-107584 | 2004-03-31 | ||
JP2004107584A JP4804719B2 (ja) | 2003-11-12 | 2004-03-31 | 半導体チップの製造方法 |
JP2004282807A JP4674070B2 (ja) | 2003-11-12 | 2004-09-28 | 半導体チップの製造方法 |
JP2004-282807 | 2004-09-28 | ||
JP2004-282808 | 2004-09-28 | ||
JP2004282808A JP2005191532A (ja) | 2003-11-12 | 2004-09-28 | 半導体チップの製造方法 |
Publications (1)
Publication Number | Publication Date |
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WO2005055299A1 true WO2005055299A1 (ja) | 2005-06-16 |
Family
ID=34658071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/017955 WO2005055299A1 (ja) | 2003-12-02 | 2004-12-02 | 半導体チップの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070037364A1 (ja) |
KR (1) | KR20060115866A (ja) |
DE (1) | DE112004002162T5 (ja) |
WO (1) | WO2005055299A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2434528A1 (en) | 2010-09-28 | 2012-03-28 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | An active carrier for carrying a wafer and method for release |
WO2015029723A1 (ja) | 2013-08-30 | 2015-03-05 | Jsr株式会社 | 被接着物回収方法、被接着物回収装置、ガス発生膜および樹脂組成物 |
KR20160001169A (ko) * | 2014-06-26 | 2016-01-06 | 삼성전자주식회사 | 마킹층을 포함하는 반도체 패키지 |
US9997399B2 (en) | 2016-08-16 | 2018-06-12 | Mikro Mesa Technology Co., Ltd. | Method for transferring semiconductor structure |
US9722134B1 (en) | 2016-08-16 | 2017-08-01 | Mikro Mesa Technology Co., Ltd. | Method for transferring semiconductor structure |
US10236195B1 (en) | 2017-12-20 | 2019-03-19 | Mikro Mesa Technology Co., Ltd. | Method for transferring device |
JP7334064B2 (ja) * | 2019-05-27 | 2023-08-28 | 株式会社ディスコ | 紫外線照射装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1167699A (ja) * | 1997-08-13 | 1999-03-09 | Texas Instr Japan Ltd | 半導体装置の製造方法 |
JP2003206468A (ja) * | 2002-01-16 | 2003-07-22 | Asahi Kasei Corp | ウエハー固定用粘着剤ならびに加工方法 |
WO2003085714A1 (fr) * | 2002-04-11 | 2003-10-16 | Sekisui Chemical Co., Ltd. | Procédé de fabrication d'une puce semi-conductrice |
JP2004281659A (ja) * | 2003-03-14 | 2004-10-07 | Seiko Epson Corp | 保持部材及び半導体装置の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050670A (ja) * | 2000-08-04 | 2002-02-15 | Toshiba Corp | ピックアップ装置及びピックアップ方法 |
JP4266106B2 (ja) * | 2001-09-27 | 2009-05-20 | 株式会社東芝 | 粘着性テープの剥離装置、粘着性テープの剥離方法、半導体チップのピックアップ装置、半導体チップのピックアップ方法及び半導体装置の製造方法 |
US20050224978A1 (en) * | 2002-06-24 | 2005-10-13 | Kohichiro Kawate | Heat curable adhesive composition, article, semiconductor apparatus and method |
-
2004
- 2004-12-02 KR KR1020067008682A patent/KR20060115866A/ko not_active Application Discontinuation
- 2004-12-02 WO PCT/JP2004/017955 patent/WO2005055299A1/ja not_active Application Discontinuation
- 2004-12-02 DE DE112004002162T patent/DE112004002162T5/de not_active Withdrawn
- 2004-12-02 US US10/577,442 patent/US20070037364A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1167699A (ja) * | 1997-08-13 | 1999-03-09 | Texas Instr Japan Ltd | 半導体装置の製造方法 |
JP2003206468A (ja) * | 2002-01-16 | 2003-07-22 | Asahi Kasei Corp | ウエハー固定用粘着剤ならびに加工方法 |
WO2003085714A1 (fr) * | 2002-04-11 | 2003-10-16 | Sekisui Chemical Co., Ltd. | Procédé de fabrication d'une puce semi-conductrice |
JP2004281659A (ja) * | 2003-03-14 | 2004-10-07 | Seiko Epson Corp | 保持部材及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
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US20070037364A1 (en) | 2007-02-15 |
KR20060115866A (ko) | 2006-11-10 |
DE112004002162T5 (de) | 2007-02-01 |
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