WO2004061906A2 - Method of fabricating organic field effect transistors - Google Patents
Method of fabricating organic field effect transistors Download PDFInfo
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- WO2004061906A2 WO2004061906A2 PCT/US2003/040469 US0340469W WO2004061906A2 WO 2004061906 A2 WO2004061906 A2 WO 2004061906A2 US 0340469 W US0340469 W US 0340469W WO 2004061906 A2 WO2004061906 A2 WO 2004061906A2
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- Prior art keywords
- film
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- polymer film
- field effect
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- 230000005669 field effect Effects 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229920006254 polymer film Polymers 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 32
- 238000000151 deposition Methods 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims 6
- 239000010410 layer Substances 0.000 abstract 2
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 239000005041 Mylar™ Substances 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- 239000004962 Polyamide-imide Substances 0.000 description 3
- 239000004697 Polyetherimide Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920002312 polyamide-imide Polymers 0.000 description 3
- 229920000767 polyaniline Polymers 0.000 description 3
- -1 polyarylsulfone Polymers 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920001601 polyetherimide Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229930192474 thiophene Natural products 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000011140 metalized polyester Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/611—Charge transfer complexes
Definitions
- This invention relates generally to organic field effect transistors. More particularly, this invention relates to low cost methods of creating organic field effect transistors.
- Field effect transistors are transistors in which the resistance of the current path from source to drain is modulated by applying a transverse electric field between grid or gate electrodes. The electric field varies the thickness of the depletion layer between the gates, thereby modifying the conductance.
- Organic field effect transistors utilize an organic semiconductor channel, such as polythiophene compounds, in place of conventional inorganic semiconducting materials. An OFET as generally practiced in the prior art is depicted in FIG.
- a gate dielectric layer 30 is disposed over the gate electrode 20
- an organic semiconductor layer 40 used as an active layer of the transistor contacts the gate dielectric layer, and source and drain electrodes 50 and 60 also contact the organic semiconductor layer 40.
- the gate electrode 20 is typically formed in the organic transistor forming region by depositing a gate metal such as Cr/Au or Ti/Au and the thickness of the gate electrode 20 is typically about 1000 Angstroms.
- a dielectric layer 30 that insulates the gate electrode from other members is made of a non-conducting substance and is formed by a vacuum evaporation or a spin coating method with a nominal thickness of 3 micrometers or less and a conductivity less than 10E-14 ohm/cm.
- the organic semiconductor layer 40 used as an active layer of the transistor is deposited by a spin coating or vacuum deposition method on the gate-insulating layer 30.
- the thickness of the organic semiconductor layer 40 is less than 100 nm.
- the organic semiconductor layer 40 of the OFET can be made of a charge transfer complex or a thiophene polymer in order to enhance the mobility and the driving current of the field effect transistor.
- charge transfer complexes are copper phthalocyanine, bis (tetra-n-butylammonium) palladium (II), and 7,7,8,8-tetracyano-p-quinodimethane. Then, a gold film with high electrical conductivity is patterned to form a source electrode 50 and a drain electrode 60.
- OFET fabrication methods are based on traditional silicon wafer deposition and other conventional vacuum deposition processes, which include sequential deposition of materials onto a single substrate. This processing occurs in a single, controlled manufacturing environment (e.g., clean room, vacuum chamber etc.). Depending on OFET design, three to five layers of materials are required to make a device. Sequential multiple layer deposition requires strict chemical and process compatibility for adjacent materials, long cycle time for layer-to-layer deposition, and post processing of each layer. These requirements significantly restrict materials selection and process adaptability of organic integrated circuit manufacturing. It would be a significant contribution to the art if a lower cost method of creating OFETs were developed that did not require such stringent process conditions.
- FIG. 1 is a cross-sectional schematic representation of an organic field effect transistor as practiced in the prior art.
- FIGs. 2-5 are side view schematic representations of methods of fabricating organic field effect transistors in accordance with various embodiments of the present invention. DETAILED DESCRIPTION OF THE INVENTION
- a or an as used herein, are defined as one or more than one.
- plurality as used herein, is defined as two or more than two.
- another as used herein, is defined as at least a second or more.
- including and/or having, as used herein, are defined as comprising (i.e., open language).
- coupled as used herein, is defined as connected, although not necessarily directly, and not necessarily mechanically.
- Organic field effect transistors can be created rapidly and at low cost on organic films by using a multilayer film that consist of a dielectric layer as core and an electrically conducting layer on each side.
- the electrically conducting layer is patterned to form a gate electrode, and a polymer film is added onto the gate electrode side of the multilayer film as a mechanical support.
- a source electrode and a drain electrode are then fashioned on the remaining side of the multilayer film, and an organic semiconductor is deposited over the source and drain electrodes, so as to fill the gap between the source and drain electrodes and touch a portion of the dielectric film to create an organic field effect transistor.
- a dielectric film 202 has a layer of an electrically conducting material 204 on one side that will be used to form gate electrode and an additional layer of electrically conducting material 206 on an opposite side that will ultimately be used to form source and drain electrodes.
- the additional layer 206 can be added to the multilayer film a later step, if desired.
- the film 202 is preferably less than 10 microns thick, and can be any of a number of dielectric materials, such as paper or polymers (polycarbonate, polyimide, polyester, polyamide, polyamide-imide, polyarylsulfone, or polyetherimide to name only a few), or ceramic filled polymers (photoimageable and non-photoimageable), or metal oxides such as tantalum oxide (Ta2O5), lead lanthanum zircornate titanate (PLZT), lead calcium zircornate titanate (PCZT).aluminum oxides, titanium oxides, etc..
- dielectric materials such as paper or polymers (polycarbonate, polyimide, polyester, polyamide, polyamide-imide, polyarylsulfone, or polyetherimide to name only a few), or ceramic filled polymers (photoimageable and non-photoimageable), or metal oxides such as tantalum oxide (
- the electrically conducting layers 204, 206 can be metal such asaluminum, copper, nickel, gold, tin, indium, etc., or a conductive polymer such as polyaniline.
- the gate electrodes 214 are formed in a patterning step 210 by removing selected portions of the metal layer 204 by using well-known conventional techniques, such as print-and- etch.
- a polymer film 223 is then attached 220 to the gate electrode side of the multilayer film by using, for example, by heated rollers 225 to apply heat and, optionally, pressure.
- the polymer film 223 is generally greater than 5 microns thick and preferably is 25 microns or more, and acts as a 'rigidizer' to provide mechanical support to the thinner dielectric layer 202.
- the polymer film 223 acts as a moisture, oxygen and light barrier for OFET package.
- the heat and pressure thermally bonds or heat stakes the polymer film to the multilayer film.
- This technique allows one to create a large number of OFETs by using a long ribbon of the raw materials in, for example, a reel-to-reel format.
- source and drain electrodes 236 are created in step 230 from the electrically conducting layer 206 on the remaining side of the multilayer film.
- step 240 an organic semiconducting material 247 such as a charge transfer complex or a thiophene polymer is deposited over the source and drain electrodes 236 to create the OFET.
- organic semiconducting material 247 fills the gap between the source and drain electrodes 236 and also contacts portions of the dielectric film.
- the polymer film 323 contains a thin metal layer 324 on the side that is opposite to the side that is attached against the patterned gate electrodes 214.
- a suitable film is metallized polyester film, such as MYLAR ® .
- MYLAR ® with a sputtered or evaporated coating of metal on one side is a readily available material, and the physical toughness of metallized MYLAR ® allows the polymer film 323 to be relatively thin while providing a highly effective moisture barrier, oxygen barrier, and light barrier for the gate electrodes.
- a first dielectric film 402 has a layer of an electrically conducting material 406 on one side.
- the film 402 is preferably less than 10 microns thick, and can be any of a number of dielectric materials, such as paper or polymers
- a second dielectric film 403 has a plurality of gate electrodes 414 patterned on one side. In step 420 the dielectric side of the first dielectric film 402 is then attached to the gate electrode 414 side of the second dielectric film 403 by using, for example, heated rollers 425 to apply heat and, optionally, pressure. In this manner, the two films are thermally bonded or heat staked together.
- source and drain electrodes 436 are created 430 on the remaining side of the multilayer dielectric film.
- an organic semiconducting material 447 is deposited over the source and drain electrodes 436 in step 440 to create the OFET.
- the organic semiconducting material 447 must fill the gap between the source and drain electrodes 436.
- a dielectric film 502 has a layer of an electrically conducting material 504 on one side using as gate and an additional layer 506 of electrically conducting material on the side opposite that of the electrical layer 504, that will ultimately be used to form source and drain electrodes.
- the additional layer 506 can be added to the multilayer film a later step, if desired.
- the film 502 is preferably less than 10 microns thick, and can be any of a number of dielectric materials, such as paper or polymers (polycarbonate, polyimide, polyester, polyamide, polyamide-imide, polyarylsulfone, or polyetherimide to name only a few) or it can be an oxide.
- the electrically conducting layers 504, 506 can be metal, such as aluminum, copper, nickel, gold, tin, indium, etc., or a conductive polymer such as polyaniline.
- the gate electrodes 514 and the source and drain electrodes 536 are formed in one or more patterning steps 510 by removing selected portions of the conductive layers 504, 506 by using well known conventional techniques.
- An organic semiconducting material 547 such as a charge transfer complex or a thiophene polymer is deposited over the source and drain electrodes 536 in step 540 to create the OFET.
- the organic semiconducting material 547 fills the gap between the source and drain electrodes 536 and also contacts portions of the dielectric film.
- our invention utilizes functional freestanding films and conventional processing methods to mass-produce organic integrated circuits.
- the freestanding films have dielectric, metallic, and/or semiconducting layers that can be patterned by a variety of methods as known by those skilled in the art.
- One embodiment begins with a first film having patterned conductors, which serve as gate electrodes and interconnects.
- the second film is a dielectric with a conductive layer on one side, and it provides both the gate dielectric and the source/drain electrodes.
- the first film is then attached to the second film by placing the gate electrode side of the first film against the dielectric side of the second film, and the composite structure is then patterned to form source/drain electrodes and interconnects.
- An organic semiconductor is then coated over the source/drain electrodes to complete the OFET.
- the various films provide oxygen, moisture, and light barriers and mechanical support to the OFET.
- the films can be low-cost metallized paper or plastic films, metal oxides, fluoropolymers, etc. Since the dielectric is very thin and pinhole free, these qualities are easy to control on a uniform surface.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003297348A AU2003297348A1 (en) | 2002-12-26 | 2003-12-18 | Method of fabricating organic field effect transistors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/329,595 US6905908B2 (en) | 2002-12-26 | 2002-12-26 | Method of fabricating organic field effect transistors |
US10/329,595 | 2002-12-26 |
Publications (2)
Publication Number | Publication Date |
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WO2004061906A2 true WO2004061906A2 (en) | 2004-07-22 |
WO2004061906A3 WO2004061906A3 (en) | 2005-06-23 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/US2003/040469 WO2004061906A2 (en) | 2002-12-26 | 2003-12-18 | Method of fabricating organic field effect transistors |
Country Status (3)
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US (2) | US6905908B2 (en) |
AU (1) | AU2003297348A1 (en) |
WO (1) | WO2004061906A2 (en) |
Cited By (3)
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DE102005022039A1 (en) * | 2005-05-09 | 2006-11-16 | Polyic Gmbh & Co. Kg | electronic component |
EP1760798A1 (en) | 2005-08-31 | 2007-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7649217B2 (en) | 2005-03-25 | 2010-01-19 | Arash Takshi | Thin film field effect transistors having Schottky gate-channel junctions |
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US6905908B2 (en) * | 2002-12-26 | 2005-06-14 | Motorola, Inc. | Method of fabricating organic field effect transistors |
US7327022B2 (en) * | 2002-12-30 | 2008-02-05 | General Electric Company | Assembly, contact and coupling interconnection for optoelectronics |
DE10340926A1 (en) * | 2003-09-03 | 2005-03-31 | Technische Universität Ilmenau Abteilung Forschungsförderung und Technologietransfer | Process for the production of electronic components |
US7554121B2 (en) * | 2003-12-26 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor device |
US7659138B2 (en) * | 2003-12-26 | 2010-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an organic semiconductor element |
JP2007526476A (en) * | 2004-03-03 | 2007-09-13 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Detection of NO using compound semiconductor and sensor and device for detecting NO |
US20060214154A1 (en) * | 2005-03-24 | 2006-09-28 | Eastman Kodak Company | Polymeric gate dielectrics for organic thin film transistors and methods of making the same |
DE102005044306A1 (en) * | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Electronic circuit and method for producing such |
US20070215863A1 (en) * | 2006-03-15 | 2007-09-20 | Lucent Technologies Inc. | Fabricating apparatus with doped organic semiconductors |
KR101283539B1 (en) | 2007-08-29 | 2013-07-15 | 삼성전자주식회사 | Inverted non-volatile memory devices, stack modules and method of fabricating the same |
US7821000B2 (en) * | 2008-02-01 | 2010-10-26 | Alcatel-Lucent Usa Inc. | Method of doping organic semiconductors |
PT103999B (en) * | 2008-03-20 | 2012-11-16 | Univ Nova De Lisboa | METHOD FOR USING AND CREATING PAPER BASED ON NATURAL CELLULOSE FIBERS, SYNTHETIC OR MIST FIBERS AS A PHYSICAL SUPPORT AND HANDLING OF ELECTRICAL LOADS IN SELF-SUSTAINABLE MEMORY FIELD EFFECT TRANSI- TERS USING SEM |
PT103998B (en) * | 2008-03-20 | 2011-03-10 | Univ Nova De Lisboa | ELECTRONIC AND OPTOELECTRONIC FIELD EFFECT DEVICES UNDERSTANDING NATURAL, SYNTHETIC OR MIST FIBER LAYERS AND THEIR MANUFACTURING PROCESS |
KR20110050580A (en) * | 2008-08-04 | 2011-05-16 | 파나소닉 주식회사 | Flexible semiconductor device and method for manufacturing same |
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JP3246189B2 (en) * | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | Semiconductor display device |
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US5981970A (en) * | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
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Also Published As
Publication number | Publication date |
---|---|
AU2003297348A8 (en) | 2004-07-29 |
US20040126935A1 (en) | 2004-07-01 |
AU2003297348A1 (en) | 2004-07-29 |
US7399656B2 (en) | 2008-07-15 |
WO2004061906A3 (en) | 2005-06-23 |
US20050176196A1 (en) | 2005-08-11 |
US6905908B2 (en) | 2005-06-14 |
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