WO2003075364A1 - Dispositif de conversion photoelectrique - Google Patents
Dispositif de conversion photoelectrique Download PDFInfo
- Publication number
- WO2003075364A1 WO2003075364A1 PCT/JP2003/002725 JP0302725W WO03075364A1 WO 2003075364 A1 WO2003075364 A1 WO 2003075364A1 JP 0302725 W JP0302725 W JP 0302725W WO 03075364 A1 WO03075364 A1 WO 03075364A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group
- photoelectric conversion
- electron
- block copolymer
- molecular structure
- Prior art date
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- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical group N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 description 1
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- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 1
- 125000004115 pentoxy group Chemical group [*]OC([H])([H])C([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- NMHMNPHRMNGLLB-UHFFFAOYSA-N phloretic acid Chemical compound OC(=O)CCC1=CC=C(O)C=C1 NMHMNPHRMNGLLB-UHFFFAOYSA-N 0.000 description 1
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- 150000003016 phosphoric acids Chemical class 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical group N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
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- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000003361 porogen Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 description 1
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- 230000002468 redox effect Effects 0.000 description 1
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- 230000004043 responsiveness Effects 0.000 description 1
- JWHOQZUREKYPBY-UHFFFAOYSA-N rubonic acid Natural products CC1(C)CCC2(CCC3(C)C(=CCC4C5(C)CCC(=O)C(C)(C)C5CC(=O)C34C)C2C1)C(=O)O JWHOQZUREKYPBY-UHFFFAOYSA-N 0.000 description 1
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- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- RPACBEVZENYWOL-XFULWGLBSA-M sodium;(2r)-2-[6-(4-chlorophenoxy)hexyl]oxirane-2-carboxylate Chemical compound [Na+].C=1C=C(Cl)C=CC=1OCCCCCC[C@]1(C(=O)[O-])CO1 RPACBEVZENYWOL-XFULWGLBSA-M 0.000 description 1
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- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 238000002366 time-of-flight method Methods 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- GAJQCIFYLSXSEZ-UHFFFAOYSA-L tridecyl phosphate Chemical compound CCCCCCCCCCCCCOP([O-])([O-])=O GAJQCIFYLSXSEZ-UHFFFAOYSA-L 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- GSURLQOINUQIIH-UHFFFAOYSA-N triheptyl phosphate Chemical compound CCCCCCCOP(=O)(OCCCCCCC)OCCCCCCC GSURLQOINUQIIH-UHFFFAOYSA-N 0.000 description 1
- SFENPMLASUEABX-UHFFFAOYSA-N trihexyl phosphate Chemical compound CCCCCCOP(=O)(OCCCCCC)OCCCCCC SFENPMLASUEABX-UHFFFAOYSA-N 0.000 description 1
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 description 1
- ZOPCDOGRWDSSDQ-UHFFFAOYSA-N trinonyl phosphate Chemical compound CCCCCCCCCOP(=O)(OCCCCCCCCC)OCCCCCCCCC ZOPCDOGRWDSSDQ-UHFFFAOYSA-N 0.000 description 1
- MAAKQSASDHJHIR-UHFFFAOYSA-N trioxolane Chemical compound C1COOO1 MAAKQSASDHJHIR-UHFFFAOYSA-N 0.000 description 1
- QJAVUVZBMMXBRO-UHFFFAOYSA-N tripentyl phosphate Chemical compound CCCCCOP(=O)(OCCCCC)OCCCCC QJAVUVZBMMXBRO-UHFFFAOYSA-N 0.000 description 1
- XZZNDPSIHUTMOC-UHFFFAOYSA-N triphenyl phosphate Chemical compound C=1C=CC=CC=1OP(OC=1C=CC=CC=1)(=O)OC1=CC=CC=C1 XZZNDPSIHUTMOC-UHFFFAOYSA-N 0.000 description 1
- RXPQRKFMDQNODS-UHFFFAOYSA-N tripropyl phosphate Chemical compound CCCOP(=O)(OCCC)OCCC RXPQRKFMDQNODS-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2036—Light-sensitive devices comprising an oxide semiconductor electrode comprising mixed oxides, e.g. ZnO covered TiO2 particles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to a photoelectric conversion element useful for a solar power generation device, a solar power generation system, and the like.
- Organic compounds are inexpensive, and have little impact on the environment when disposed of by incineration after use. against this background, the development of photoelectric conversion devices using organic photoelectric conversion molecules is one of the most important energy measures.
- the strong tendency of the molecules to self-organize indicates that the same molecules of the donor and the acceptor may be gathered during the fabrication of the photoelectric conversion device, resulting in macro phase separation.
- macro phase separation occurs, unevenness occurs on the surface of the photoelectric conversion layer, which hinders carrier movement.
- excitons generated by light absorption in the domain generated by phase separation are deactivated to the ground state before reaching the donor-xceptor interface, leading to a decrease in photoelectric conversion characteristics. .
- the present invention has been made in view of such circumstances, and a photoelectric conversion material capable of producing a photoelectric conversion layer capable of suppressing macro phase separation and having good charge separation and carrier transfer functions, and a photoelectric conversion material using the same. It relates to a conversion element.
- the present invention comprises at least a polymer unit having a molecular structure having an electron donating property and a polymer unit having a molecular structure having an electron accepting property.
- a photoelectric conversion element comprising a photoelectric conversion layer made of a block copolymer.
- the molecular structure having an electron donating property and the molecular structure having an electron accepting property in the block copolymer be present in the main chain of each polymer unit.
- the polymer unit having a molecular structure having an electron donating property and the polymer unit having a molecular structure having an electron accepting property in the block copolymer may each have a carrier transfer ability.
- the domain size of the microphase-separated structure formed by the block copolymer is preferably within 10 times the exciton diffusion length.
- the domain structure of the microphase-separated structure formed by the block copolymer forms a continuous layer.
- the domain structure formed by the block copolymer is preferably a quantum well structure.
- the block copolymer of the present invention forms a microphase-separated structure composed of an electron-donating phase and an electron-accepting phase by self-assembly. Since the domain size of this microphase is a distance at which excitons can diffuse, very efficient charge separation occurs. Also, depending on the type of block copolymer, each microphase connects between the electrodes, and in that case, a good carrier transfer function is exhibited. In still another case, a quantum well structure is formed, and the photoelectric conversion efficiency is greatly improved.
- the present invention will be described in detail.
- the block copolymer used in the present invention is characterized by comprising at least a polymer unit having a molecular structure having an electron donating property and a polymer unit having a molecular structure having an electron accepting property. .
- the electron-donating molecular structure of the present invention refers to a structure that has a small ionization potential, and tends to become a positive ion by supplying electrons to other molecules.
- the electron-accepting molecular structure according to the present invention refers to a structure that has a high electron affinity and easily accepts electrons from other molecules to form a negative ion state.
- the block copolymer of the present invention since the polymer unit having a molecular structure having an electron donating property and the polymer unit having a molecular structure having an electron accepting property are used in combination, the above-described electron accepting property or electron donating property is used.
- the properties of the compounds are naturally determined by the relative relationship between the compounds used, and combinations of compounds satisfying those properties are appropriately selected.
- the molecular structure having an electron donating property is not particularly limited as long as it has an electron donating property in the molecular structure portion.
- S, poly or oligoarylene vinylene structure, poly or oligo aniline connection structure, poly or oligo thiophene connection Examples include a structure, a poly- or oligopyrrole-linked structure, a poly- or oligoamine-linked structure, a phthalocyanine structure, and a naphthalocyanine structure.
- the molecular structure having an electron-accepting property is not particularly limited as long as it has an electron-accepting property, but a poly- or oligo-vinylene structure containing an electron-withdrawing group such as a cyano group, and an electron structure such as a cyano group.
- electron-accepting molecular structure examples include those represented by the following formulas (1) to (6), and examples of the electron-donating molecular structure include those represented by the following formulas (7) to (13). Can be mentioned.
- R 1 and R 4 to R 8 may be the same or different, and each is independently hydrogen or a linear or branched alkyl group having 1 to 10 carbon atoms.
- R 2 and R 3 may be the same or different, and each independently represents a linear or branched alkyl or alkenyl group having 1 to 10 carbon atoms or an aryl group having 6 to 12 carbon atoms. Show.
- alkyl group examples include a methyl group, an ethyl group, a propyl group, an i-propyl group, a butynole group, an s-butyl group, a t-butyl group, a pentynole group, an isopentinole group, a neopentyl group, and a t-pentyl group.
- Examples of the alkenyl group include vinyl group, aryl group, isopropyl group, butenyl group, pentenylenyl group, and
- Examples of the alkoxy group include a methoxy group, an ethoxy group, a propoxy group, an i-propoxy group, a butoxy group, an s-butoxy group, a t-butoxy group, a pentoxy group, an isopentoxy group, and a neoxyl group.
- Examples of aryl include phenyl, xylyl, tolyl, cumenyl and naphthyl, and examples of aralkyl include benzyl and trimethyl.
- Examples of the aryloxy group include a phenoxy group and a tolyloxy group.
- X first and Y- may each be the same or different, each independently, Harogena two ON, C 10 4 -, BF 4 _, PF 6 -, CH 3 COO-, CH 3 (C 6 H 4) S Indicates an anion selected from 0 3 ".
- m and n each represent an integer of 1 to 1000, preferably 2 to 500.
- Copolymers having these structures include copolymers having these structures in the main chain.
- the copolymer may have any of these structures and a copolymer having these structures in the side chain, but is preferably a copolymer having these structures in the main chain.
- these structures have either an electron-accepting property or an electron-donating property, but these structures also have a carrier-transferring ability. It is desirable to have a structure. Whether or not these structures have a carrier-moving ability can be easily determined by an ordinary method. For example, it can be discriminated by preparing a homopolymer consisting mostly of these structures and measuring the carrier mobility by the time-of-flight method (for example,
- Kiyari ⁇ mobility 1 0- 7 ⁇ 1 0 3 cm 2 / V ⁇ s, preferably desirably of about 1 0- 6 ⁇ 1 0 cm 2 ZV ⁇ s.
- These structures are usually preferable to have electrical conductivity, and can be discriminated by producing a homopolymer having these structures, performing doping, and measuring the conductivity by a conventional method. .
- the conductivity is
- the thin film formed from the block copolymer of the present invention forms, by self-assembly, a Miku mouth phase separation structure composed of an electron donating phase and an electron accepting phase.
- a Miku mouth phase separation structure composed of an electron donating phase and an electron accepting phase.
- the domain size can be measured with an electron microscope, a scanning probe microscope, or the like.
- the domain size of the microphase-separated structure is preferably within 10 times, preferably within 5 times, more preferably within 1 time of the exciton diffusion length. .
- Exciton diffusion length is the distance that exciton diffuses while the amount of exciton generated by light absorption becomes 1 / e.
- the value can be obtained by measuring the photoluminescent quenching of the polymer or oligomer comprising each cut constituting the block copolymer as a function of the film thickness.
- the measured exciton diffusion length differs between the electron donating phase and the electron accepting phase, but generally takes a value of about 10 nm.
- the block copolymer of the present invention In the formed thin film, the domain structure of the microphase separation structure formed by the thin film is preferably a continuous layer or a quantum well structure.
- the fact that the domain structure is a continuous layer means that, as shown in FIG.
- either one of the domain structures of the electron-donating phase or the electron-accepting phase in the block copolymer is continuous. Refers to a structure that is physically connected.
- the fact that the domain structure is a quantum well structure means that, as shown in Fig. 3 or 4, each domain structure consisting of an electron-donating phase or an electron-accepting phase in the block copolymer has an alternately laminated structure. The state where is. It should be noted that FIGS. 2, 3, and 4 are typical, and a structure similar to these figures is also included as a meaning.
- block copolymer used in the present invention includes the following general formula.
- a and A' contain a molecular structure having an electron accepting property.
- D, D represent a molecular group having a molecular structure having an electron donating property.
- R represents a polymer residue.
- Specific examples of the block copolymer represented by these general formulas are not particularly limited, but include the following.
- R 1Q and R 11 may be the same or different, each independently represents hydrogen or an alkyl group having 1 to 5 carbon atoms, and R 9 and R 12 Is an alkylene group having 1 to 10 carbon atoms, an arylene group having 6 to 12 carbon atoms, or an alkylene group having 1 to 10 carbon atoms containing an oxygen atom or a nitrogen atom, an arylene group having 6 to 12 carbon atoms, and These combinations are shown.
- alkylene group examples include a methylene group, an ethylene group, a trimethylene group, a tetramethylene group, an isopropylene group, and the like
- arylene group examples include a phenylene group and a triylene.
- n and m are, in each case, n is usually 2 to: L0000, preferably 3 to 5000, and more preferably an integer in the range of 4 to 20000.
- M is usually an integer in the range of 2 to 10000, preferably 3 to 5000, more preferably 4 to 2000.
- the molecular terminals of these copolymers vary depending on the production method, but usually, hydrogen, It is a hydrocarbon such as an alkyl group, an alkenyl group, an alkoxyl group having 1 to 10 carbon atoms or an aryl group, an aralkyl group, an aryloxy group or an aralkyl group having 6 to 12 carbon atoms.
- copolymers can be easily obtained by a known method.
- the method for producing them is not particularly limited.
- a condensation polymerization reaction of a dihalogen compound having a structure having an electron accepting property or a structure having an electron donating property with a strong base, a structure having an electron accepting property or an electron donating property may be employed.
- the block copolymer is used as a photoelectric conversion layer.
- the photoelectric conversion element of the present invention is basically produced by forming at least one layer of a thin film of the block copolymer of the present invention on a conductive substrate, and further forming a conductive film thereon.
- the method for forming the block copolymer thin film is not particularly limited, but is usually a vacuum evaporation method, a molecular beam epitaxy method, an ion plating method, a dry film formation method such as a CVD method, or a suitable solvent. Dissolving into a solution and casting to obtain a thin film, spin coating, dip coating, bar coating, screen printing, or immersing in a solution layer to adsorb or bind may be used. it can.
- the thickness of the photoelectric conversion layer is not particularly limited. ! ! ! ! ! ⁇ ; ⁇ !!!, preferably
- the conductive substrate on which the photoelectric conversion layer is formed is not particularly limited as long as conductivity can be obtained by an appropriate method, but it is usually manufactured by laminating a transparent electrode layer on a transparent substrate.
- the transparent substrate is not particularly limited, and the material, thickness, dimensions, shape, and the like can be appropriately selected according to the purpose. For example, colorless or colored glass, netted glass, glass block, or the like is used. Alternatively, a resin having colored transparency may be used.
- polyester such as polyethylene terephthalate, polyamide, polysulfone, polyether sulfone, polyether ether
- examples include carbonyl, polyphenylene sulfide, polycarbonate, polyimide, polymethyl methacrylate, polystyrene, cellulose triacetate, and polymethylpentene.
- transparent in the present invention refers to having a transmittance of 10 to 100% .
- substrate in the present invention refers to a substrate having a smooth surface at room temperature, and the surface is a flat surface or a curved surface. Or it may be deformed by stress.
- the transparent conductive film forming the conductive layer of the electrode is not particularly limited as long as the object of the present invention is achieved, and includes, for example, a metal thin film such as gold, silver, chromium, copper, and tungsten, and a metal oxide.
- the metal oxide such as tin oxide, zinc oxide or, these doped trace components Indium Tin Oxide (I TO (I n 2 0 3: S n)), Fluorine doped Tin Oxide (FTO (S n 0 2 : F)), Aluminum doped Zinc Oxide (AZO (ZnO: A1)) and the like are preferably used.
- These film thicknesses are usually 10 ⁇ ! ⁇ 5000 ⁇ , preferably 1 00 ⁇ ! ⁇ 3000 m.
- the surface resistance (resistivity) is appropriately selected depending on the use of the substrate of the present invention, but is usually 0.5 to 500 ⁇ / 39, preferably 0.5 to 50 QZsq.
- the method for forming the transparent electrode film is not particularly limited, and a known method is appropriately selected and used depending on the type of the above-described metal or metal oxide used as the conductive layer. Usually, a vacuum evaporation method, an ion plating method, or the like is used. Method, CVD or sputtering method is used. In any case, it is desirable to form the substrate at a substrate temperature of 20 to 700 ° C.
- a semiconductor layer may be provided between the conductive substrate and the photoelectric conversion layer.
- the material used to fabricated a semiconductor layer B i 2 S 3, C d S, C d S e, C d T e, Cu I n S 2, Cu I n S e 2, F e 2 0 3, G a P, G a A s, I n P, n b 2 0 5, P b S, S i, S n0 2, T i 0 2, WO 3, Z nO, include Z n S etc.
- n O is preferably C d S, C d S e , Cu I n S 2, Cu I n S e 2, F e 2 O 3, G a A s, I n P, Nb 2 O 5, P b S, S n0 2, a T i O 2, W0 3, Z nO, may be used in combination of a plurality of these. Particularly preferably T i O 2, Z nO, a S n0 2, Nb 2 O 5 , and most preferably T i O 2, Z n O der You.
- the semiconductor used in the present invention may be single crystal or polycrystal.
- a crystal system an anatase type, a rutile type, a brookite type and the like are mainly used, and an anatase type is preferred.
- a known method can be used for forming the semiconductor layer.
- the semiconductor layer can be obtained by applying a nanoparticle dispersion liquid, a sol solution, or the like of the semiconductor on a substrate by a known method.
- the coating method in this case is not particularly limited, and includes a method of obtaining a thin film state by a casting method, a spin coating method, a dip coating method, a bar coating method, and various printing methods such as a screen printing method. Can be.
- the thickness of the semiconductor layer is not limited, but is 0.5 ⁇ m or more and 50 ⁇ m or less, preferably 1 / im or more and 20 ⁇ m or less.
- conductive film electrodes formed on the block copolymer thin film include metals such as aluminum, magnesium, gold, silver, platinum, indium, copper, and chromium, and alloys such as magnesium: silver, and conductive carbon. And metal pastes such as silver, gold, and copper.
- a method for forming the conductive film As a method for forming the conductive film, a known method is appropriately selected and used depending on the above-mentioned material used for the conductive film. And various printing methods such as a spin coating method, a dip coating method, a bar coating method, a dispenser method, and a screen printing method.
- These film thicknesses are usually between 0.5 nm and 500 m / m, preferably 10 ⁇ ! 330 O O m.
- the surface resistance (resistivity) is appropriately selected depending on the use of the substrate of the present invention, but is usually 0.5 to 500 QZ sq, preferably 0.5 to 50 ⁇ / sq. .
- a conductive polymer may be inserted between the conductive substrate and the photoelectric conversion layer or between the conductive film electrode and the photoelectric conversion layer.
- the conductive polymer include, but are not limited to, poly (3,4-ethylenedioxythiophene), polypyrrole, and polyaline, and the like. ) Can be cited as having particularly good properties. The role of this conductive polymer is Improving the contact between the electrodes and reducing the leakage current.
- a counter substrate, a photoelectric conversion layer made of a block copolymer, and a conductive substrate may be laminated using a counter electrode substrate.
- Examples of the counter electrode substrate include a support substrate having conductivity by itself, and a substrate in which a conductive film is formed on a support substrate.
- the support substrate is not particularly limited, and the material, thickness, dimensions, shape, and the like can be appropriately selected depending on the purpose.
- the support substrate may or may not be conductive.
- metals such as gold and platinum, for example, colorless or colored glass, netted glass, glass block, etc. are used, and it has colorless or colored transparency Resin may be used.
- polyesters such as polyethylene terephthalate, polyamide, polysulfone, polyether sulfone, polyether ether ketone, polyphenylene sulfide, polycarbonate, polyimide, polymethyl methacrylate, polystyrene, cellulose triacetate, polymethyl Penten and the like.
- the substrate in the present invention has a smooth surface at room temperature, and the surface may be flat or curved, or may be deformed by stress.
- an electrolyte layer may be provided between the photoelectric conversion layer and the counter electrode substrate.
- the electrolyte layer is an ion conductive material containing at least one substance selected from (a) a polymer matrix, (b) a plasticizer, and (c) a supporting electrolyte. (C) or (d) is characterized by exhibiting reversible redox properties by a redox agent.
- a material that can be used as a polymer matrix includes a polymer matrix alone, a solid state or a gel state formed by the addition of a plasticizer, the addition of a supporting electrolyte, or the addition of a plasticizer and a supporting electrolyte.
- a plasticizer for polymer a plasticizer alone, a solid state or a gel state formed by the addition of a plasticizer, the addition of a supporting electrolyte, or the addition of a plasticizer and a supporting electrolyte.
- Hexafaf is a polymer compound exhibiting the properties of the above polymer matrix.
- Single polymer such as propylene, tetrafluoroethylene, trifluoroethylene, ethylene, propylene, acrylonitrile, vinylidene chloride, acrylic acid, methacrylic acid, methyl acrylate, ethyl acrylate, methyl methacrylate, styrene polyvinylidene fluoride, etc.
- Copolymers or copolymers can be mentioned. These polymers may be used alone, mixed, or copolymerized. Next, the plasticizer used in the present invention will be described.
- any solvent can be used as long as it is a solvent generally used in electrochemical cells and batteries.
- salts, acids, alkalis and room-temperature molten salts which are usually used in the field of electrochemistry or battery field can be used.
- the salt is not particularly limited, and examples thereof include inorganic ionic salts such as alkali metal salts and alkaline earth metal salts; quaternary ammonium salts; cyclic quaternary ammonium salts; quaternary phosphate salts. Salts are preferred.
- salts include a halogen ion, SCN—C 1 O, BF 4 —CF 3 S0 3 _ (CF 3 SO 2 ) 2 N-(C 2 F 5 S0 2 ) 2 N-PF 6 _A s F 6 -CH 3 COO—Li salt, Na salt, or K salt with anion selected from the group consisting of CH 3 (C 6 H 4 ) SO 3 and (C 2 F 5 SO 2 ) 3 C .
- the acids are not particularly limited, and inorganic acids, organic acids, and the like can be used, and specific examples thereof include sulfuric acid, hydrochloric acid, phosphoric acids, sulfonic acids, and carboxylic acids.
- the alkalis are not particularly limited, and any of sodium hydroxide, potassium hydroxide, lithium hydroxide and the like can be used.
- the room temperature molten salt is not particularly limited, but the room temperature molten salt in the present invention is a salt consisting of an ion pair that is molten at room temperature consisting of only an ion pair containing no solvent component (that is, a liquid state). And usually a salt comprising an ion pair having a melting point of 20 ° C or less and being liquid at a temperature exceeding 20 ° C.
- One of the room-temperature molten salts can be used alone, or a mixture of two or more can be used.
- room temperature molten salt examples include, for example, the following.
- R represents an alkyl group having 2 to 20, preferably 2 to 10 carbon atoms.
- X represents a halogen ion, S CN— —C 1 OBF (CFS ⁇ ) 2 ⁇ —, (C
- R 1 and R 2 are each an alkyl group having 1 to 10 carbon atoms (preferably a methyl group or an ethyl group), or an aralkyl group having 7 to 20 carbon atoms, preferably 7 to 13 carbon atoms (preferably X represents a counter anion, specifically, a halogen ion, SCN—, C 1 O 4 ⁇ , BF 4 ⁇ , (CF a SO 2) 2 N -, (C 2 F 5 SO 2) 2 N-, PF 6 -, A s F 6 _, CH 3 COO _, CH 3 (C 6 H 4) S0 3 -, (C 2 F 5 S0 2 ) Indicates 3 C, etc.)
- R 3 , R 4 , R 5 and R 6 are each an alkyl group having 1 or more carbon atoms, preferably an alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 12 carbon atoms (such as a phenyl group), or
- X_ represents a counter anion, specifically, a halogen ion, SCN—, C 1 O 4 —, BF 4 —, ( CF a S 0 2 ) 2 N-, (C 2 F 5 S 0 2 ) 2 N-, PF 6 _, As F 6- , CH 3 COO-, CH 3 (C 6 H 4 ) S ⁇ 3- , (C 2 F 5 S 0 2 ) 3 C—and so on.)
- the use amount of the above supporting electrolyte is not particularly limited and is optional, but is usually 0.1% by mass or more, preferably 1% by mass or more, and more preferably 10% by mass or more in the ion conductive film. And 70% by mass or less, preferably 60% by mass or less, more preferably 50% by mass or less.
- the redox material used in the present invention will be described.
- the redox material is capable of performing a reversible electrochemical oxidation-reduction reaction, and the type thereof is not particularly limited.
- the redox material only one of the oxidized form and the reduced form may be used, or the oxidized form and the reduced form may be mixed at an appropriate molar ratio, It can also be added.
- a redox couple of the polymer matrix, the plasticizer, and the supporting electrolyte may be added so that the polymer matrix, the plasticizer, and the supporting electrolyte exhibit electrochemical responsiveness.
- a material showing such properties a halogen ion, S CN -, C 10 4 -, BF 4 -, CF 3 SO 3 -, (CF 3 S0 2) 2 N -, (C 2 F 5 S0 2) 2 N-, PF 6- , As F 6- , CH 3 COO-, CH 3 (C 6 H 4 ) S ⁇ 3- , and (C
- halogens such as iodine, bromine and chlorine can be used.
- the electrolyte of the present invention may further contain other components.
- Other components that can be included include ultraviolet absorbers.
- the ultraviolet absorber that can be used is not particularly limited, but typical examples thereof include an organic ultraviolet absorber such as a compound having a benzotriazole skeleton and a compound having a benzophenone skeleton.
- a compound represented by the following general formula (44) is preferably exemplified.
- R 81 represents a hydrogen atom, a halogen atom or an alkyl group having 1 to 10, preferably 1 to 6 carbon atoms.
- the halogen atom include fluorine, chlorine, bromine, and iodine.
- the alkyl group include a methyl group, an ethyl group, a propyl group, an i-propyl group, a butyl group, a t-butyl group, a cyclohexyl group and the like.
- the substitution position of R 81 is a 4- or 5-position of Benzotoriazo Le skeleton, a halogen atom Contact Yopi alkyl group are usually located at the 4-position.
- R82 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, preferably 1 to 6 carbon atoms.
- the alkyl group include a methyl group, an ethyl group, a propyl group, i-Propyl, butyl, t-butyl, cyclohexyl and the like.
- R 83 represents an alkylene group or an alkylidene group having 1 to 10 carbon atoms, preferably 1 to 3 carbon atoms.
- Examples of the alkylene group include a methylene group, an ethylene group, a trimethylene group, and a propylene group.
- the alkylidene group include an ethylidene group and a propylidene group.
- Specific examples of the compound represented by the general formula (44) include 3- (5-chloro-1-H-benzotriazol-2-yl) -1-5- (1,1-dimethylethyl) -14-hydroxy-1 Benzenepropanoic acid, 3 _ (2 H-benzotriazole-2-yl) 5 5- (1,1-dimethylethyl) 4 4-hydroxy-1-benzene ethanoic acid, 3 ((2 H-benzotriazole-2-—) 1) 4-Hydroxybenzene ethanoic acid, 3- (5-Methyl-2H-benzotriazole_2-yl) -5- (1-Methylethynole) _4-Hydroxybenzenepropanoic acid, 2 — (2,1-hydroxy-1,5, -methylphenyl) benzotriazole, 2- (2,1-hydroxy-1,3,5, —bis ( ⁇ , ⁇ -dimethylbenzyl) phenyl) benzotriazole
- Preferred examples of the compound having a benzophenone skeleton include compounds represented by the following general formulas (45) to (47).
- R 92 , R 93 , R 95 , R 96 , R 98 , and R 99 are the same or different groups, and each is a hydroxy group, a carbon number of 1-1. 0, preferably represents 1 to 6 alkyl groups or alkoxy groups.
- the alkyl group include a methyl group, an ethyl group, a propyl group, an i-propyl group, a butyl group, a t-butyl group, and a cyclohexyl group.
- alkoxy group include a methoxy group, an ethoxy group, a propoxy group, an i-propoxy group, and a butoxy group.
- R 91 , R 94 , and R 97 each represent an alkylene group or an alkylidene group having 1 to 10 carbon atoms, preferably 1 to 3 carbon atoms.
- the alkylene group include a methylene group, an ethylene group, a trimethylene group, and a propylene group.
- the alkylidene group include an ethylidene group and a propylidene group.
- pl, p2, p3, ql, q2, and q3 each independently represent an integer of 0 to 3.
- Preferred examples of the compounds having a benzophenone skeleton represented by the above general formulas (45) to (47) include 2-hydroxy-14-methoxybenzophenone-15-force rubonic acid and 2,2′-dihydroxy.
- UV absorbers are optional, and the amount used is also particularly limited. But not shall, when used in the redox electrolyte film in 0.1 mass 0/0 or more, preferably more than 1 wt%, 2 0% by weight or less, preferably in an amount of 1 0 wt% or less Is desirably contained.
- the electrolyte of the present invention may be manufactured as a redox electrolyte film. The method for producing the redox electrolyte film will be described below.
- the redox electrolyte film of the present invention can be obtained by mixing a mixture obtained by blending optional components such as a plasticizer, a supporting electrolyte, a redox material, and an ultraviolet absorber into a polymer matrix component, if necessary, into a film by a known method. It can be obtained by molding.
- the molding method in this case is not particularly limited, and examples thereof include extrusion molding, a method of obtaining a film by a casting method, spin coating, and dip coating.
- Extrusion molding can be carried out by a conventional method.
- a polymer matrix is mixed with optional components such as a plasticizer, a supporting electrolyte, a redox material, and an ultraviolet absorber, and after being heated and melted, a film is formed.
- a polymer matrix is mixed with optional components such as a plasticizer, a supporting electrolyte, a redox material, and an ultraviolet absorber, and the viscosity is adjusted with an appropriate diluent.
- the film can be formed by applying and drying with a coater.
- a doctor coater, a blade coater, a rod coater, a knife coater, a Reno Kushirono recorder, a gravure coater, a spray coater, and a curtain coater can be used, and can be selectively used depending on viscosity and film thickness.
- a polymer matrix is mixed with optional components such as a plasticizer, a supporting electrolyte, a redox material, and an ultraviolet absorber, the viscosity is adjusted with an appropriate diluent, and a commercially available spin coater is used. It can be formed by coating and drying.
- a polymer matrix is mixed with optional components such as a plasticizer, a supporting electrolyte, a redox material, and an ultraviolet absorber, and the viscosity is adjusted with an appropriate diluent to prepare a mixed solution.
- a suitable base from the mixture solution, The film can be formed by drying.
- Redox electrolyte film obtained by the above method the ion conductivity, usually at room temperature 1 X 1 0- 7 SZC m or more, preferably 1 X 1 0- 6 SZC m or more, preferably a further 1 X 1 0-5 show a more SZc m.
- the ionic conductivity can be determined by a general method such as the complex impedance method.
- the thickness of the redox electrolyte film is not particularly limited, but the lower limit is usually 1 ⁇ or more, preferably 10 ⁇ or more, and the upper limit is usually 3 mm or less, preferably 1 mm or less.
- Electron donating unit electron accepting unit (Example 1: Production of photoelectric conversion element)
- the domain sizes of the electron-donating phase and the electron-accepting phase were 20 nm and 30 nm, respectively, and the phase structure was a quantum well structure as shown in FIG. Further, the obtained photoelectric conversion layer was left at 80 ° C. for 20 hours, but no particular change was observed.
- a 1 1. 33 X 1 0- 3 to about 1 00 nm laminated in P a (1 X 1 0- 5 To rr) in (30AZs) to the photoelectric conversion layer, to prepare a photoelectric conversion element.
- This element was irradiated with light from a 100W tungsten lamp that had been made uniform through a diffuser plate, and the current value at the time of short circuit was measured.As a result, a current value of 2.1 ⁇ A was obtained. It was confirmed that the film exhibited characteristics.
- a photoelectric conversion layer was produced in the same manner as in Example 1 except that the block copolymer of Synthesis Example 2 was used as the block copolymer.
- the thickness of the layer was about 100 nm.
- Observation of the surface state of the photoelectric conversion layer revealed that a uniform and non-cloudy film was formed. According to the observation with an electron microscope, the domain sizes of the electron-donating phase and the electron-accepting phase were 8 nm and 20 nm, respectively, and the phase structure was such that the electron-accepting phase was a continuous layer as shown in Fig. 1. It became the structure which became.
- the obtained photoelectric conversion layer was left at 80 ° C. for 20 hours, but no particular change was observed.
- the exciton diffusion length of compound A was about 13 nm, and the carrier mobility was 1 X 10—5 cm 2 / V ⁇ s. .
- Kiyaria mobility was 4 XI 0- 5 cm 2 / V ⁇ s. Then about 1 00 nm stacked in the A 1 1.
- 33 X 1 0- 3 with P a (1 X 1 0- 5 T orr) (30A / s) in the photoelectric conversion layer, producing a photoelectric conversion element did.
- the device was irradiated with a uniform 100 W tungsten lamp light through a diffuser plate, and the current value at the time of short circuit was measured.A current value of 3.3 A was obtained. Can be confirmed.
- Example 3 Except that the block copolymer of Synthesis Example 3 was used as the block copolymer, In the same manner as in Example 1, a photoelectric conversion layer was produced. The thickness of the layer was about 120 nm. Observation of the surface state of the photoelectric conversion layer revealed that a uniform and non-cloudy film was formed. Observation with an electron microscope showed that the domain sizes of the electron donating phase and the electron accepting phase were 8 nm and 10 nm, respectively, and the phase structure was a quantum well structure as shown in Fig. 3. . The obtained photoelectric conversion layer was left at 80 ° C. for 20 hours, but no particular change was observed.
- a single row to measure the diffusion length and carrier mobility, with respect to compounds a an exciton diffusion length of about 1 3 nm
- Canon rear mobility was 1 X 1 0- 5 cm 2 ZV ⁇ s.
- the diffusion length was about 13 nm and the carrier mobility was 2 ⁇ 10 ′′ 5 cm 2 / V ⁇ s.
- a 1 was placed on the photoelectric conversion layer.
- This element was irradiated with light from a 100 W tungsten lamp, which was made uniform through a diffuser, and the current value at the time of short-circuit was measured.As a result, a current value of 1.5 ⁇ was obtained. Can be confirmed.
- the photoelectric conversion layer the A 1 1. 3 3 X 1 0- 3 P a (1 X 1 0- 5 T orr) in (30AZs) stacked about 1 00 nm, to prepare a photoelectric conversion element.
- the device was irradiated with the light of a uniform 100 W tungsten lamp through a diffuser plate, and the current value at the time of short circuit was measured. The obtained current value was 0.6 mm.
- the photoelectric conversion element of the present invention since the photoelectric conversion layer has a microphase-separated structure, charge separation occurs efficiently, and carriers move well, high-efficiency photovoltaic power generation is possible.
- the photoelectric conversion element has features that it can be manufactured relatively easily, and that the environmental load during manufacture and disposal is small.
- FIG. 1 is a diagram showing a typical layer structure as a photoelectric conversion element in the present invention.
- FIG. 2 is an example diagram in which the domain structure of the photoelectric conversion layer in the present invention is a continuous layer.
- FIG. 3 is a diagram showing an example in which the domain structure of the photoelectric conversion layer in the present invention is a quantum well structure. It is.
- FIG. 4 is another example diagram in which the domain structure of the photoelectric conversion layer in the present invention is a quantum well structure.
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Description
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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EP03708513A EP1482565A4 (en) | 2002-03-07 | 2003-03-07 | PHOTOELECTRIC IMPLEMENTATION DEVICE |
JP2003573713A JP4126019B2 (ja) | 2002-03-07 | 2003-03-07 | 光電変換素子 |
US10/935,038 US20050029610A1 (en) | 2002-03-07 | 2004-09-07 | Photoelectric converting device |
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US10/935,038 Continuation US20050029610A1 (en) | 2002-03-07 | 2004-09-07 | Photoelectric converting device |
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EP (1) | EP1482565A4 (ja) |
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Cited By (6)
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JP2008532301A (ja) * | 2005-03-04 | 2008-08-14 | へリアテック ゲーエムベーハー | 有機光活性装置 |
KR100957783B1 (ko) | 2009-03-31 | 2010-05-12 | 주식회사 용진유화 | 태양전지 및 그 제조방법 |
JP2010171230A (ja) * | 2009-01-23 | 2010-08-05 | Sumitomo Chemical Co Ltd | 電子素子およびそれに有用なビピリジニウム骨格を有する高分子化合物 |
JP2011086938A (ja) * | 2009-10-15 | 2011-04-28 | Samsung Electronics Co Ltd | 有機ナノワイヤーを含む太陽電池 |
WO2013122063A1 (ja) * | 2012-02-17 | 2013-08-22 | 富士フイルム株式会社 | 有機光電変換素子組成物、これを含む薄膜、光電池、これに用いられる有機半導体ポリマー、化合物およびポリマーの製造方法 |
JP2014519202A (ja) * | 2011-05-27 | 2014-08-07 | アルケマ フランス | 光起電力モジュールの有機光起電力セルの組成物 |
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ATE480017T1 (de) * | 2002-04-08 | 2010-09-15 | Nippon Oil Corp | Fotoelektrisches umwandlungselement |
WO2005004205A2 (en) * | 2003-06-26 | 2005-01-13 | E.I. Dupont De Nemours And Company | Methods for forming patterns of a filled dielectric material on substrates |
JP5023455B2 (ja) * | 2005-03-28 | 2012-09-12 | 大日本印刷株式会社 | 有機薄膜太陽電池の製造方法および有機薄膜太陽電池 |
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JPWO2011018884A1 (ja) | 2009-08-12 | 2013-01-17 | 株式会社クラレ | 光電変換素子およびその製造方法 |
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JP2008532301A (ja) * | 2005-03-04 | 2008-08-14 | へリアテック ゲーエムベーハー | 有機光活性装置 |
US8426727B2 (en) | 2005-03-04 | 2013-04-23 | Heliatek Gmbh | Organic photoactive device |
JP2010171230A (ja) * | 2009-01-23 | 2010-08-05 | Sumitomo Chemical Co Ltd | 電子素子およびそれに有用なビピリジニウム骨格を有する高分子化合物 |
KR100957783B1 (ko) | 2009-03-31 | 2010-05-12 | 주식회사 용진유화 | 태양전지 및 그 제조방법 |
JP2011086938A (ja) * | 2009-10-15 | 2011-04-28 | Samsung Electronics Co Ltd | 有機ナノワイヤーを含む太陽電池 |
US9608221B2 (en) | 2009-10-15 | 2017-03-28 | Samsung Electronics Co., Ltd. | Solar cell having organic nanowires |
JP2014519202A (ja) * | 2011-05-27 | 2014-08-07 | アルケマ フランス | 光起電力モジュールの有機光起電力セルの組成物 |
WO2013122063A1 (ja) * | 2012-02-17 | 2013-08-22 | 富士フイルム株式会社 | 有機光電変換素子組成物、これを含む薄膜、光電池、これに用いられる有機半導体ポリマー、化合物およびポリマーの製造方法 |
US9680103B2 (en) | 2012-02-17 | 2017-06-13 | Fujifilm Corporation | Organic photoelectric conversion element composition, thin film and photovoltaic cell each containing the same, organic semiconductor polymer and compound each for use in these, and method of producing the polymer |
Also Published As
Publication number | Publication date |
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US20050029610A1 (en) | 2005-02-10 |
JP4126019B2 (ja) | 2008-07-30 |
EP1482565A4 (en) | 2010-09-29 |
JPWO2003075364A1 (ja) | 2005-06-30 |
EP1482565A1 (en) | 2004-12-01 |
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