WO2002081767A2 - A method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target - Google Patents
A method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target Download PDFInfo
- Publication number
- WO2002081767A2 WO2002081767A2 PCT/US2002/010516 US0210516W WO02081767A2 WO 2002081767 A2 WO2002081767 A2 WO 2002081767A2 US 0210516 W US0210516 W US 0210516W WO 02081767 A2 WO02081767 A2 WO 02081767A2
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- WIPO (PCT)
- Prior art keywords
- sputtering
- ai2o3
- inclusion
- sputter target
- alloy
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Definitions
- the present invention relates generally to aluminum or aluminum alloy sputter targets having aluminum oxide (AI2O3) inclusions and, more particularly, to a method for determining a critical size of an AI2O3 inclusion in an aluminum or aluminum alloy sputter target to inhibit bipolar arcing during sputtering thereof.
- AI2O3 aluminum oxide
- an AI2O3 inclusion in an Al or Al alloy sputter target can result in arcing when the target is sputtered in a sputtering apparatus.
- an electric field forms in the sputtering apparatus between the target and an anode. This electric field ionizes a gas, such as argon, within the sputtering apparatus so as to form a plasma.
- a plasma sheath or dark space, separates a positive column of the plasma from the sputter target. This sheath has a certain thickness.
- Introduction of an AI2O3 inclusion on the surface of the target can distort the electric field so as to alter the shapes of the positive plasma column and the plasma sheath.
- Dielectric inclusions and surface layers have long been known to cause arcing in plasma discharges as well as in vacuum spark gaps. More recently, research on arcing in sputtering plasmas has shown that inclusion and surface oxide induced arcing causes molten metal macroparticle ejection from aluminum sputtering targets producing particle defects on the substrate. High-speed video analysis of arcing from heavily doped aluminum-aluminum oxide sputtering targets has shown that the molten metal macroparticles ejected therefrom can have speeds of over 500 m/sec and temperatures of 3000 K.
- the present invention provides a method for determining a critical size for an AI2O3 inclusion in an Al or Al alloy sputter target to prevent arcing during sputtering thereof.
- This method includes providing a sputtering apparatus having a plasma column, such as argon.
- the plasma has a plasma sheath of a known thickness during sputtering under a selected sputtering environment of an Al or Al alloy sputter target having an AI2O3 inclusion-free sputtering surface. If the thickness of the sheath is unknown, it preferably is measured by providing an Al or Al alloy sputter target having an AI2O3 inclusion-free sputtering surface for sputtering under a selected sputtering environment in the sputtering apparatus. The sheath thickness can then be calculated using the Child-Langmuir law by factoring in the known conditions for the selected sputtering environment including the sputtering voltage, ion mass and ion current density.
- the critical size of an AI2O3 inclusion can be determined based upon the thickness of the sheath. More specifically, the diameter, or effective diameter, of an AI2O3 inclusion in an Al or Al alloy sputter target must be less than the thickness of the plasma sheath during sputtering under the selected sputtering environment to inhibit arcing.
- an Al or Al alloy sputter target having an AI2O3 inclusion of a known diameter that is less than the thickness of the plasma sheath can be provided for sputtering in the sputtering apparatus under the selected sputtering environment so that bipolar arcing of the Al or Al alloy sputter target is inhibited. Since sputtering of the sputter target is performed at the sputtering surface, it is preferred that the measurement of the diameter of the Al 2 O 3 inclusion be taken in a plane substantially parallel with the sputtering surface.
- Al alloy sputter target will allow device yields, for example, in integrated circuit manufacturing, to increase and will allow scrapped products to be reduced resulting in a monetary savings for all involved.
- one object of the present invention is to determine the critical size for an AI2O3 inclusion in an aluminum or aluminum alloy sputter target sputtered under plasma in a sputtering apparatus.
- Another object of the invention is to prevent arcing during sputtering of an Al or Al alloy sputter target having an AI2O3 inclusion.
- Another object of the invention is to understand how the inclusion or surface oxide size affects the propensity of the sputtering plasma to arc, as well as to find the relationship between inclusion size, sputtering power, and the propensity for arcing and molten macroparticle ejection.
- FIG. 1 is a perspective view of a conventional sputter target assembly having a backing plate and a target;
- FIG. 2 is a schematic perspective view of an aluminum target having a sputter track provided with an aluminum oxide inclusion
- Fig. 3 is a partial top perspective view of an aluminum sputter target provided with an aluminum oxide inclusion
- Fig. 4 is a view of Fig. 3 after sputtering of the sputter target
- Fig. 5 is a partial top perspective view of an aluminum, microparticle on a silicon wafer
- Fig. 6 is a graph representing the variation in total particle density found on silicon wafers with sputtering power density and inclusion size
- Fig. 7 is a graph representing the particle size distributions found on silicon wafers after sputtering at 8, 16, 24, and 32 W/cm 2 power densities with a 2940 ⁇ inclusion in the target sputter track;
- Fig. 8 is a graph representing the variation in total particle defect density on the wafer after sputtering with embedded inclusion size for sputtering power densities of 8, 16, 24 and 32 W/cm 2 ;
- Fig. 9 is a graph representing the arc rate as a function of embedded
- Fig. 10 is a graph representing the variation in inclusion critical size with sputtering power density for particle density and arc rate measurements
- Fig. 11 is a graph representing the correlation between arc rate and total particle defect density found on the wafer
- Fig. 12 is a schematic diagram of the distortion of the plasma in a sputtering apparatus by inclusion charging caused by an Al 2 O 3 inclusion located on the surface of a sputter target.
- a sputter target assembly 10 preferably includes a backing plate 12 and a target 14 bonded together wherein the target 14 and backing plate 12 both are made of Al or Al alloys.
- the target 14 includes a sputtering surface 16 for sputtering in a sputtering apparatus (not shown) and preferably comprises a high grade Al or Al alloy.
- Preferred Al alloys for use in the target 14 and the backing plate 12 include Al-Cu alloys.
- An intermediate layer (not shown) may be provided between the target and backing plate.
- any conventionally available sputtering apparatus used for sputtering targets in a plasma preferably an argon plasma
- the plasmas in these conventional apparatuses form a plasma sheath having a known, or measurable, thickness under a selected sputtering environment. If the thickness of the sheath is unknown, it is preferably measured by providing a contaminant-free Al or Al alloy sputter target having an AI2O3 inclusion-free sputtering surface for sputtering under a selected sputtering environment in the sputtering apparatus.
- the diameter, or minimum effective diameter, of an AI2O3 inclusion in an Al or Al alloy sputter target must be less than the thickness of the plasma sheath during sputtering under the selected sputtering environment to inhibit arcing. While some inclusions may be substantially circular in nature such that a diameter measurement easily can be realized, it is understood that a minimum effective diameter can be realized for Al 2 O 3 inclusions having somewhat irregular or non-circular shapes. Accordingly, diameter shall be used interchangeably with minimum effective diameter. It is this measured diameter that is compared with the measured thickness of the plasma sheath.
- Al alloy sputter target can be measured rather simplistically such as via scanning electron microscopy, or any other suitable measuring device or means.
- the inclusions provided within the sputter target, and not on the surface must be measured by other more involved methods such as via an ultrasonic scanning method like the one disclosed in U.S. Patent 5,406,850 hereby incorporated by reference herein. Additional measuring methods which may be suitable can be found in U.S. Provisional Patent Application Serial No. 09/700,268 filed November 9, 2000 titled “Method and Apparatus for Quantitative Sputter Target Cleanliness and Characterization, U.S. Provisional Patent Application Serial No. 60/197,790 filed April 14, 2000 titled “Macroparticle Free Metallic Sputtering Targets," U.S.
- a contaminate-free Al or Al alloy sputter target can be provided having no AI2O3 inclusions with diameters greater than the measured thickness of the plasma sheath for sputtering in the sputtering apparatus under the selected sputtering environment.
- the sputter target can be sputtered in the sputtering apparatus under the selected sputtering environment, whereby arcing is inhibited.
- the softness of the aluminum and hardness of the Al 2 O 3 inclusions allowed the inclusions to remain mechanically locked in the sputtering surfaces of the aluminum targets.
- the inclusion particles were always placed in the centers of the magneton erosion or sputter tracks on the targets where sputtering occurred with more frequency.
- Fig. 2 shows a schematic diagram of the experimental arrangement where an aluminum target plate 18 has an embedded Al 2 O 3 inclusion 20 in the sputtering surface 21.
- Each Al target plate 18 was placed into a sputtering apparatus (not shown) and sputtered under a sputtering environment where the powers ranged from 8 W/cm 2 to 60 W/cm 2 at a 0.5 Pa argon pressure.
- the argon plasmas so generated were magnetically contained so that the targets operated in the DC magneton-sputtering mode.
- the 10 kW switching sputtering power supply used in this study was an Advanced Energy model 2012-061-m MDX-10K.
- Target/substrate spacing was 143 mm.
- Sputtering power density was calculated by dividing the sputtering power by the area of the sputtering track 23, which was 12.7 cm 2 for each target.
- Table 1 below provides the sputtering voltage, current, ion current density and the sheath thickness for the sputtering conditions used in this study.
- the ion current density was calculated by assuming a secondary electron coefficient of 0.045.
- the sheath thickness in the sputter track was calculated using the Child-Langmuir Law. From Table 1 , the sheath thickness for the experimental conditions used in this study decreases from 600 ⁇ m at low power conditions to 300 ⁇ m at high power conditions. Sheath thickness for 24 W/cm 2 sputtering power was 440 ⁇ m.
- Figs 3 and 4 show an enlarged ⁇ 3 mm size Al 2 O 3 inclusion 22 embedded into the sputtering surface 24 of an aluminum target plate 26 before and after sputtering.
- the inclusion 22 remains well attached to the sputtering surface 24 with little change in size or shape after sputtering.
- the sputtering process erodes the sputtering surface 24 so that some grain boundary structure 28 can be seen after sputtering as suggested in Fig. 4.
- Polished 150 mm diameter silicon wafers were used as the substrates for these experiments. Deposited films were analyzed for particulate defects using a Tencor 6420 surface analyzer. Each wafer was analyzed after sputter coating for 1 minute. Particulate defects in the deposited film were grouped by apparent size with size bins ranging from 0.5 to 12 ⁇ m. The background particle density was measured by depositing aluminum films on wafers without an embedded inclusion. The background total particle density was 8.5 cm -2 .
- the arc rate was measured by monitoring detected current pulses on the main power lead from the power supply to the sputtering cathode.
- a coil placed around the cathode power cable inductively detected the current pulses when arcs occurred.
- the voltage pulses induced in the sensing coil were recorded on an oscilloscope and a pulse counter.
- the arc rate was the total arc count divided by the deposition time.
- Fig. 5 shows aluminum macroparticles 30 captured on a silicon wafer 32 during aluminum sputter deposition.
- the relative large volume of the large macroparticle 34 and the flattened shape shown in Fig. 5 are often seen in large macroparticles.
- Macroparticles 30 emitted during the early stages of an arc or emitted as a result of surface contamination tend to be smaller and more spherical in shape.
- the shapes of the macroparticles 30 after solidification depend upon the surface tension of the liquid and the diameter of the macroparticle droplets prior to freezing on the wafer 32.
- R a and P d represent the arc rate and the measured density of particles found on the wafer. At low sputtering power density, no macroparticles were detected above the background level. Inclusions with diameters of less than 340 ⁇ m did not cause ejection of measurable macroparticles even at power densities of over 50 W/cm 2 . As the diameters of the inclusions increased from 340 ⁇ m, the total particle densities found on the wafers increased.
- the sputtering power density required to generate particle defects on the wafers decreased to the point that for an inclusion having a diameter of 2940 ⁇ m, a significant increase in particle defect density on the wafer was found with a sputtering power density of only 16 W/cm 2 .
- Fig. 8 shows how the total particle densities on the wafers varied with embedded inclusion size as the sputtering power density increased from 8 to 32 W/cm2. Below about 500 ⁇ m inclusion size, the defect particle density could not be distinguished above the background particle density on the wafer.
- the critical inclusion size for generation of macroparticles on the wafer above the background level was determined for each power density by doing a least-squares fit of the data for inclusion sizes greater than 340 ⁇ m.
- the lines in Fig. 8 show the least-squares fits of the data for the various power densities. It is clear that the slopes of the particle density versus inclusion size lines increases with sputtering power. However, the x-intercepts do not change significantly with sputtering power.
- the critical inclusion size for initiation of arcing and molten macroparticles ejection for each data set is graphed in Fig. 10 as a function of the sputtering power density.
- the error bars are derived from the error of estimate obtained from the least-squares-fits in Figs. 8 and 9.
- the data in Fig 10 gives an average value for the critical inclusion size of 440 ⁇ 160 ⁇ m. It can also be seen in Fig. 10 that the crucial inclusion size is within experimental error independent of the sputtering power density.
- the critical size is 440 ⁇ 160 ⁇ m for the conditions used in this study wherein the plasma sheath thickness ranged from 300 to 600 ⁇ m.
- the total particle defect density detected on the silicon wafer was 3 cm 2 when the 450- ⁇ m inclusion was used increasing to 11 cm' 2 for the 730 ⁇ m inclusion.
- the critical inclusion size appears to be related to the conditions for initiating the arc and not related to conditions to form molten metal on the target surface or to break the molten metal surface tension for ejection of molten macroparticles from the cathode surface. It has already been shown that the force exerted by an arc on the cathode surface is more than sufficient to overcome the surface tension and eject molten macroparticles. So, once an arc occurs macroparticle ejection is likely. This is confirmed by comparing our measurements of particle defect density on the wafer with arc rate. The arc rate and the total particle defect density are clearly related to each other.
- Figure 11 shows the relationship between total particle defect density found on the wafer, P d , and the arc rate, R a , during film deposition.
- P d total particle defect density found on the wafer
- R a the arc rate
- Figure 12 shows a schematic representation of the plasma 36 when an AI2O3 inclusion 38 is present on the cathode sputtering surface 40 of a target plate 42 such that the diameter (d) of the AI2O3 inclusion 38 is greater than the thickness (s) of the plasma sheath 44 that is located over an area of the target plate 42 free from AbO 3 inclusions.
- the plasma sheath 44 separates the positive column of the plasma 36 and the cathode sputtering surface 40.
- Introduction of the inclusion 38 on the sputtering surface 40 of the target plate 42 leads to distortion of the plasma 36 and the sheath 44. Since sputtering of the target plate 42 is performed at the sputtering surface 40, it is preferred that the measurement of the diameter (d) of the Al 2 O 3 inclusion 38 be taken along a plane 45 substantially parallel with the sputtering surface 40.
- the charge on the inclusion 38 acts to almost neutralize the electric field in the original sheath region above the inclusion 38. This causes the plasma boundary to sag toward the inclusion 38 and the plasma sheath thickness over the inclusion 38 decreases as the plasma positive column diffuses into the volume over the charged inclusion 38. As the plasma column diffuses inward and the field barrier separating the plasma 36 from the cathode shrinks, a plasma channel forms over the inclusion. This plasma channel grows primarily by radial diffusion of the plasma 36.
- the electric field distribution around the inclusion also will not be symmetrical. Since the electric field distortion will tend to mimic the inclusion asymmetry, the radial growth of the plasma channel will also be asymmetrical.
- the plasma channel grows, a point is reached where conditions permit breakdown and an arc strikes between a site on the cathode surface near the inclusion and the plasma channel.
- the energy stored in the power supply (not shown) and the connecting cable (not shown) is discharged as an arc. This arc, once formed, is free to move across the cathode surface 40 creating arc tracks and ejecting molten macroparticles.
- the arc spot with this model will tend to occur on the metallic cathode surface 40 near the inclusion 38. This is consistent with observations that the arc tracks do not intersect the inclusions 38, but are near the inclusion 38.
- the arc rate will depend on location of the inclusion with respect to the local current density and sheath thickness. That is, if the sputtering surface 40 corresponds to an imaginary surface (not shown) within the sputtering apparatus, the arc rate and, thus, the local critical diameter, will depend on location along that imaginary surface. Since for typical fixed magnet planar magnetron sputtering systems the current density over the surface of the target is highly non-uniform, the sheath thickness will also be non-uniform depending upon the local current density.
- the sheath thickness in, for example, the sputter track area of a typical sputtering condition with 50 mA/cm 2 current density will be 0.4 mm.
- moving away from the sputter track to the areas where current densities decrease to 10 mA/cm 2 will increase the sheath thickness to 0.9 mm. Therefore, the critical inclusion size for arcing in fixed magnet systems depends on the location of the inclusion 38 on the target surface 40.
- the critical inclusion size decreases in the sputter track areas (high power density and smaller sheath thickness) and increases in non-sputter track areas (low power density and larger sheath thickness).
- arcing can still result indicating that the thickness aspect of the inclusion does not appear to play a significant role in the process.
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/473,844 US7087142B2 (en) | 2001-04-04 | 2002-04-04 | Method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target |
JP2002579526A JP4303970B2 (en) | 2001-04-04 | 2002-04-04 | Method for determining the critical dimension of aluminum oxide inclusions in an aluminum sputtering target or aluminum alloy sputtering target |
KR1020037013047A KR100841915B1 (en) | 2001-04-04 | 2002-04-04 | A method for determining a critical size for an aluminum oxide inclusion in an aluminum or an aluminum alloy sputter target |
EP02719429A EP1381703B1 (en) | 2001-04-04 | 2002-04-04 | A method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target |
DE60239054T DE60239054D1 (en) | 2001-04-04 | 2002-04-04 | METHOD FOR DETERMINING THE CRITICAL SIZE OF AN INCLUSION IN A SPUTTER TARGET OF ALUMINUM OR ALUMINUM ALLOY |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28148201P | 2001-04-04 | 2001-04-04 | |
US60/281,482 | 2001-04-04 |
Publications (2)
Publication Number | Publication Date |
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WO2002081767A2 true WO2002081767A2 (en) | 2002-10-17 |
WO2002081767A3 WO2002081767A3 (en) | 2002-12-05 |
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PCT/US2002/010516 WO2002081767A2 (en) | 2001-04-04 | 2002-04-04 | A method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target |
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Country | Link |
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US (1) | US7087142B2 (en) |
EP (1) | EP1381703B1 (en) |
JP (1) | JP4303970B2 (en) |
KR (1) | KR100841915B1 (en) |
DE (1) | DE60239054D1 (en) |
WO (1) | WO2002081767A2 (en) |
Cited By (1)
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US6895342B2 (en) | 2001-08-09 | 2005-05-17 | Tosoh Smd, Inc. | Method and apparatus for non-destructive target cleanliness characterization by types of flaws sorted by size and location |
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TWI247576B (en) * | 2003-03-28 | 2006-01-11 | Hon Hai Prec Ind Co Ltd | Method of manufacturing electromagnetic interference shield |
US10201070B2 (en) * | 2012-01-10 | 2019-02-05 | Electron Power Systems, Inc. | Systems and methods for generating electron spiral toroids |
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2002
- 2002-04-04 US US10/473,844 patent/US7087142B2/en not_active Expired - Lifetime
- 2002-04-04 WO PCT/US2002/010516 patent/WO2002081767A2/en active Application Filing
- 2002-04-04 KR KR1020037013047A patent/KR100841915B1/en not_active IP Right Cessation
- 2002-04-04 DE DE60239054T patent/DE60239054D1/en not_active Expired - Lifetime
- 2002-04-04 JP JP2002579526A patent/JP4303970B2/en not_active Expired - Fee Related
- 2002-04-04 EP EP02719429A patent/EP1381703B1/en not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
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PAVATE ET AL., PROCEEDINGS OF SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 3214 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6895342B2 (en) | 2001-08-09 | 2005-05-17 | Tosoh Smd, Inc. | Method and apparatus for non-destructive target cleanliness characterization by types of flaws sorted by size and location |
Also Published As
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EP1381703A4 (en) | 2008-04-09 |
US7087142B2 (en) | 2006-08-08 |
JP4303970B2 (en) | 2009-07-29 |
US20040118675A1 (en) | 2004-06-24 |
EP1381703B1 (en) | 2011-01-26 |
DE60239054D1 (en) | 2011-03-10 |
JP2004526865A (en) | 2004-09-02 |
KR100841915B1 (en) | 2008-06-30 |
EP1381703A2 (en) | 2004-01-21 |
WO2002081767A3 (en) | 2002-12-05 |
KR20040011495A (en) | 2004-02-05 |
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