WO1997032059A1 - Procede et appareil pour retirer un monocristal - Google Patents
Procede et appareil pour retirer un monocristal Download PDFInfo
- Publication number
- WO1997032059A1 WO1997032059A1 PCT/JP1997/000594 JP9700594W WO9732059A1 WO 1997032059 A1 WO1997032059 A1 WO 1997032059A1 JP 9700594 W JP9700594 W JP 9700594W WO 9732059 A1 WO9732059 A1 WO 9732059A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- single crystal
- seed crystal
- pulling
- crystal
- seed
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
Definitions
- the raw material for crystallization is melted by the heater 62, the pressure in the chamber 69 is reduced, and then the gas is left in the melt 63 for a while to allow the gas in the melt 63 to be sufficiently released.
- An inert gas is introduced from above the chamber 69 to make the inside of the chamber 69 a reduced pressure inert gas atmosphere.
- the method for pulling a single crystal according to the present invention (2) includes the method for pulling a single crystal described above.
- the single crystal pulling apparatus (10) according to the present invention is the above single crystal pulling apparatus.
- FIG. 5 is a cross-sectional view schematically showing the single crystal pulling apparatus according to the embodiment (2).
- L3 ⁇ 4I4 is a cross-sectional view schematically showing the single crystal pulling apparatus according to the embodiment (3).
- FIG. 4 is a cross-sectional view schematically showing a single crystal pulling apparatus 30 according to the embodiment (3).
- the single crystal pulling apparatus in which the holding tubes 44 and 51 are added to the holders 44 and 52 has been described, but according to another embodiment, In the single crystal pulling apparatus, the heat retaining tubes 41 and 51 are added to the holders 44 and 52, and the laser generator 11 and the infrared rays described in the embodiments (1) to (3) are used.
- the line generating / introducing devices 21 and 31 may be provided.
- the heat retaining tubes 41 and 51 are made of quartz, the laser beam 13 and the infrared ray 25 pass therethrough. Therefore, the seed crystal 1 is formed by the laser generator 11 and the infrared ray introducing and introducing devices 21 and 31. 5 can be heated, and since the heat retaining tubes 41 and 51 have excellent heat retaining properties, the temperature of the seed crystal 15 can be increased more efficiently.
- Diameter about 300 mm (12 inches), length: about 100 mm, weight: about 270 kg
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19780252T DE19780252B4 (de) | 1996-02-29 | 1997-02-27 | Verfahren und Vorrichtungen zum (Aus)Ziehen eines Einkristalls |
US08/930,361 US5916364A (en) | 1996-02-29 | 1997-02-27 | Method and apparatus for pulling a single crystal |
KR1019970707684A KR100293095B1 (ko) | 1996-02-29 | 1997-02-27 | 단결정향상방법과 단결정향상장치 |
JP53080397A JP3245866B2 (ja) | 1996-02-29 | 1997-02-27 | 単結晶引き上げ方法及び単結晶引き上げ装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8/43765 | 1996-02-29 | ||
JP4376596 | 1996-02-29 | ||
JP8/43766 | 1996-02-29 | ||
JP4376696 | 1996-02-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997032059A1 true WO1997032059A1 (fr) | 1997-09-04 |
Family
ID=26383599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1997/000594 WO1997032059A1 (fr) | 1996-02-29 | 1997-02-27 | Procede et appareil pour retirer un monocristal |
Country Status (5)
Country | Link |
---|---|
US (1) | US5916364A (ja) |
JP (1) | JP3245866B2 (ja) |
KR (1) | KR100293095B1 (ja) |
DE (1) | DE19780252B4 (ja) |
WO (1) | WO1997032059A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999007922A1 (en) * | 1997-08-08 | 1999-02-18 | Memc Electronic Materials, Inc. | Non-dash neck method for single crystal silicon growth |
US7235128B2 (en) | 2002-07-12 | 2007-06-26 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1160379A (ja) * | 1997-06-10 | 1999-03-02 | Nippon Steel Corp | 無転位シリコン単結晶の製造方法 |
JP3267225B2 (ja) * | 1997-12-26 | 2002-03-18 | 住友金属工業株式会社 | 単結晶引き上げ方法、及び単結晶引き上げ装置 |
JPH11302096A (ja) * | 1998-02-18 | 1999-11-02 | Komatsu Electronic Metals Co Ltd | 単結晶製造用種結晶、単結晶製造用種結晶の製造方法、及び単結晶製造方法 |
EP1184339A3 (de) * | 2000-09-01 | 2002-09-04 | A.R.T.-Photonics GmbH | Optische Faser und Herstellungsverfahren für eine optische Faser |
US6482261B2 (en) | 2000-12-29 | 2002-11-19 | Ebara Solar, Inc. | Magnetic field furnace |
DE10137856B4 (de) * | 2001-08-02 | 2007-12-13 | Siltronic Ag | Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium |
US6866713B2 (en) * | 2001-10-26 | 2005-03-15 | Memc Electronic Materials, Inc. | Seed crystals for pulling single crystal silicon |
JP4604478B2 (ja) * | 2003-11-19 | 2011-01-05 | コニカミノルタホールディングス株式会社 | 新規色素、着色組成物、インクジェット記録液、及びインクジェット記録方法 |
JP5163101B2 (ja) * | 2007-12-25 | 2013-03-13 | 信越半導体株式会社 | 単結晶製造装置および製造方法 |
TW201350632A (zh) * | 2012-06-12 | 2013-12-16 | Wcube Co Ltd | 藍寶石製造裝置及鏡頭保護玻璃 |
CN104911711B (zh) * | 2015-06-16 | 2018-03-09 | 哈尔滨奥瑞德光电技术有限公司 | 一种加防护罩的籽晶结构 |
US10829869B2 (en) | 2016-06-29 | 2020-11-10 | Crystal Systems Corporation | Single-crystal production equipment and single-crystal production method |
EP3299498B1 (en) * | 2016-07-28 | 2020-02-19 | Crystal Systems Corporation | Single crystal producing device |
CN110546315B (zh) | 2018-03-29 | 2021-09-03 | 株式会社水晶*** | 单晶制造装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60180993A (ja) * | 1984-02-24 | 1985-09-14 | Sumitomo Electric Ind Ltd | GaAs単結晶の引上方法 |
JPS60195087A (ja) * | 1984-03-16 | 1985-10-03 | Hamamatsu Photonics Kk | 単結晶育成炉 |
JPH01179796A (ja) * | 1988-01-08 | 1989-07-17 | Sumitomo Electric Ind Ltd | 無転位GaAs単結晶製造用の種結晶 |
JPH0426584A (ja) * | 1990-05-18 | 1992-01-29 | Osaka Titanium Co Ltd | シリコン単結晶製造装置 |
JPH04154696A (ja) * | 1990-10-19 | 1992-05-27 | Nec Corp | 単結晶の育成方法 |
JPH07206587A (ja) * | 1994-01-10 | 1995-08-08 | Hitachi Cable Ltd | GaAs単結晶の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL270246A (ja) * | 1961-10-13 | |||
SU400139A1 (ru) * | 1971-07-07 | 1974-02-25 | Фонд вноертш | |
US4659421A (en) * | 1981-10-02 | 1987-04-21 | Energy Materials Corporation | System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
AT395439B (de) * | 1987-09-04 | 1992-12-28 | Avl Verbrennungskraft Messtech | Verfahren zum zuechten von kristallen und vorrichtung zur durchfuehrung des verfahrens |
US4971650A (en) * | 1989-09-22 | 1990-11-20 | Westinghouse Electric Corp. | Method of inhibiting dislocation generation in silicon dendritic webs |
JPH04104988A (ja) * | 1990-08-20 | 1992-04-07 | Fujitsu Ltd | 単結晶成長方法 |
US5292487A (en) * | 1991-04-16 | 1994-03-08 | Sumitomo Electric Industries, Ltd. | Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor |
US5607506A (en) * | 1994-10-21 | 1997-03-04 | University Of South Florida | Growing crystalline sapphire fibers by laser heated pedestal techiques |
-
1997
- 1997-02-27 JP JP53080397A patent/JP3245866B2/ja not_active Expired - Fee Related
- 1997-02-27 WO PCT/JP1997/000594 patent/WO1997032059A1/ja active IP Right Grant
- 1997-02-27 US US08/930,361 patent/US5916364A/en not_active Expired - Lifetime
- 1997-02-27 KR KR1019970707684A patent/KR100293095B1/ko not_active IP Right Cessation
- 1997-02-27 DE DE19780252T patent/DE19780252B4/de not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60180993A (ja) * | 1984-02-24 | 1985-09-14 | Sumitomo Electric Ind Ltd | GaAs単結晶の引上方法 |
JPS60195087A (ja) * | 1984-03-16 | 1985-10-03 | Hamamatsu Photonics Kk | 単結晶育成炉 |
JPH01179796A (ja) * | 1988-01-08 | 1989-07-17 | Sumitomo Electric Ind Ltd | 無転位GaAs単結晶製造用の種結晶 |
JPH0426584A (ja) * | 1990-05-18 | 1992-01-29 | Osaka Titanium Co Ltd | シリコン単結晶製造装置 |
JPH04154696A (ja) * | 1990-10-19 | 1992-05-27 | Nec Corp | 単結晶の育成方法 |
JPH07206587A (ja) * | 1994-01-10 | 1995-08-08 | Hitachi Cable Ltd | GaAs単結晶の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999007922A1 (en) * | 1997-08-08 | 1999-02-18 | Memc Electronic Materials, Inc. | Non-dash neck method for single crystal silicon growth |
US7235128B2 (en) | 2002-07-12 | 2007-06-26 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor |
Also Published As
Publication number | Publication date |
---|---|
KR19990008159A (ko) | 1999-01-25 |
US5916364A (en) | 1999-06-29 |
KR100293095B1 (ko) | 2001-10-25 |
JP3245866B2 (ja) | 2002-01-15 |
DE19780252B4 (de) | 2005-09-08 |
DE19780252T1 (de) | 1998-04-02 |
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