WO1995008519B1 - Coarse reaction bonded silicon nitride - Google Patents
Coarse reaction bonded silicon nitrideInfo
- Publication number
- WO1995008519B1 WO1995008519B1 PCT/US1994/010336 US9410336W WO9508519B1 WO 1995008519 B1 WO1995008519 B1 WO 1995008519B1 US 9410336 W US9410336 W US 9410336W WO 9508519 B1 WO9508519 B1 WO 9508519B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon nitride
- grains
- reaction bonded
- microns
- nitride ceramic
- Prior art date
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract 33
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract 33
- 239000000919 ceramic Substances 0.000 claims abstract 23
- 239000002131 composite material Substances 0.000 claims abstract 16
- 239000011159 matrix material Substances 0.000 claims abstract 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract 6
- 239000010703 silicon Substances 0.000 claims abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- XCCANNJCMHMXBZ-UHFFFAOYSA-N hydroxyiminosilicon Chemical compound ON=[Si] XCCANNJCMHMXBZ-UHFFFAOYSA-N 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
Abstract
A ceramic comprising: a) between 20 w/o and 90 w/o unnecked composite grains comprising: i) between 5 w/o and 100 w/o silicon nitride and ii) between 0 w/o and 95 w/o free silicon, said composite grains having lengths of at least 50 microns and widths of at least 10 microns; and b) between 10 w/o and 80 w/o matrix grains having lengths of less than 20 microns.
Claims
1. A reaction bonded silicon nitride ceramic comprising: a) between 20 w/o and 90 w/o unnecked composite grains comprising: i) between 5 w/o and 100 w/o silicon nitride, and ii)between 0 w/o and 95 w/o free silicon, said composite grains having lengths of at least 50 microns and widths of at least 10 microns, and b) between 10 w/o and 80 w/o matrix grains having lengths of less than 20 microns.
2. The reaction bonded silicon nitride ceramic of claim 1, wherein the composite grains comprise between about 30 w/o and 70 w/o of the ceramic.
3. The reaction bonded silicon nitride ceramic of claim 2 wherein the composite grains comprise: i) between 5 w/o and 99 w/o silicon nitride in the form of a dense beta silicon nitride shell, and ii)between 1 w/o and 95 w/o free silicon in the form of a free silicon core, said composite grains having lengths of at least 50 microns and widths of at least 10 microns.
4. The reaction bonded silicon nitride ceramic of claim 3 wherein the dense beta silicon nitride shell comprises between 20 w/o and 99 w/o of the composite grain.
5. The reaction bonded silicon nitride ceramic of claim 3 wherein the dense beta silicon nitride shell comprises between 60 w/o and 99 w/o of the composite grain.
6. The reaction bonded silicon nitride ceramic of claim 3 wherein the dense beta silicon nitride shell comprises between 80 w/o and 99 w/o of the composite grain.
2 4
7. The reaction bonded silicon nitride ceramic of claim 6 consisting essentially of between 30 w/o and 70 w/o composite grains and between 30 w/o and 70 w/o matrix grains.
8. The reaction bonded silicon nitride ceramic of claim
7, wherein the composite grains have widths of at least 20 microns.
9. The reaction bonded silicon nitride ceramic of claim
8, wherein the composite grains have lengths of between 75 and 125 microns.
10. The reaction bonded silicon nitride ceramic of claim 8 , wherein the composite grains have lengths of at least 100 microns.
11. The reaction bonded silicon nitride ceramic of claim 8, wherein the composite grains have an average aspect ratio of between 1:1 and 3:1.
12. The reaction bonded silicon nitride ceramic of claim 8, wherein the composite grains have an average aspect ratio of between 1:1 and 2:1.
13. The reaction bonded silicon nitride ceramic of claim 8 wherein the matrix grains comprise silicon nitride.
14. The reaction bonded silicon nitride ceramic of claim 8 wherein the matrix grains comprise: a) between 0 w/o and 30 w/o silicon nitride, and b) between 30 w/o and 65 w/o silicon oxynitride.
15. The reaction bonded silicon nitride ceramic of claim 8 wherein the matrix grains comprise: a) between 10 w/o and 30 w/o silicon nitride, and b) between 40 w/o and 60 w/o silicon oxynitride.
16. The reaction bonded silicon nitride ceramic of claim 8 wherein the matrix grains comprise: a) between 10 w/o and 20 w/o silicon nitride, and b) between 40 w/o and 50 w/o silicon oxynitride.
17. The reaction bonded silicon nitride ceramic of claim 8 wherein the matrix grains have lengths of between 1 and 20 microns.
18. The reaction bonded silicon nitride ceramic of claim 8 wherein the matrix grains have lengths of between 3 and 20 microns.
19. The reaction bonded silicon nitride ceramic of claim 8 having a thickness of at least 1/2 of an inch.
20. The reaction bonded silicon nitride ceramic of claim 8 having iron present in an amount of less than 100 ppm.
21. The reaction bonded silicon nitride ceramic of claim 8 having a thickness of at least 3/4 of an inch.
22. A green body comprising: a) between 10 w/o and 80 w/o fine grains selected from the group consisting of silicon and silica, said fine grains having a length of less than 20 microns, and b) between 20 w/o and 90 w/o coarse silicon grains having a length of more than 50 microns and a width of at least 10 microns.
23. The green body of claim 22 wherein the fine grains are silicon.
24. The green body of claim 22 wherein the fine grains comprise between 10 w/o and 60 w/o of the green body and the coarse grains comprise between 40 w/o and 90 w/o of the green body.
25. The green body of claim 22 wherein the fine grains comprise between 30 w/o and 70 w/o of the green body and the coarse grains comprise between 30 w/o and 70 w/o of the green body.
26. The green body of claim 25 wherein the coarse grains have lengths of between 75 and 100 microns.
2 6
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12361793A | 1993-09-17 | 1993-09-17 | |
| US08/123,617 | 1993-09-17 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| WO1995008519A2 WO1995008519A2 (en) | 1995-03-30 |
| WO1995008519A3 WO1995008519A3 (en) | 1995-05-04 |
| WO1995008519B1 true WO1995008519B1 (en) | 1995-06-08 |
Family
ID=22409751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1994/010336 WO1995008519A2 (en) | 1993-09-17 | 1994-09-16 | Coarse reaction bonded silicon nitride |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5510304A (en) |
| WO (1) | WO1995008519A2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19859292A1 (en) * | 1998-12-22 | 2000-06-29 | Cfi Ceramics For Industry Gmbh | Material based on silicon nitride, its production and use in microwave processes |
| JP3250558B2 (en) * | 2000-02-28 | 2002-01-28 | 株式会社豊田中央研究所 | Mechanical quantity sensor material |
| JP3689730B2 (en) * | 2001-11-14 | 2005-08-31 | 独立行政法人産業技術総合研究所 | Polishing materials for silicon nitride ceramics and sialon ceramics |
| US20040211496A1 (en) * | 2003-04-25 | 2004-10-28 | Crystal Systems, Inc. | Reusable crucible for silicon ingot growth |
| JP2009541194A (en) * | 2006-06-23 | 2009-11-26 | アール・イー・シー・スキャンウェハー・アー・エス | Reusable crucible and method for manufacturing the same |
| CN103339300A (en) * | 2010-12-30 | 2013-10-02 | 圣戈本陶瓷及塑料股份有限公司 | Crucible body and method of forming same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1071933A (en) * | 1952-12-15 | 1954-09-07 | Carborundum Co | Manufactured articles of silicon nitride and their manufacturing process |
| GB779474A (en) * | 1954-07-29 | 1957-07-24 | Union Carbide Ltd | Method of preparing silicon nitride articles by slip casting |
| GB1115931A (en) * | 1964-11-19 | 1968-06-06 | Birmingham Small Arms Co Ltd | Improvements in or relating to the production of non-metallic articles by powder metallurgy methods |
| US3356513A (en) * | 1966-12-20 | 1967-12-05 | Norton Co | Production of silicon oxynitride |
| US3639101A (en) * | 1970-06-29 | 1972-02-01 | Norton Co | Process for producing silicon oxynitride |
| US4331771A (en) * | 1980-05-12 | 1982-05-25 | Norton Company | High density silicon oxynitride |
| JPS59152261A (en) * | 1983-02-18 | 1984-08-30 | 大同特殊鋼株式会社 | Manufacture of silicon sintered body |
| DE3514284A1 (en) * | 1985-04-19 | 1986-10-23 | Elektroschmelzwerk Kempten GmbH, 8000 München | METHOD FOR PRODUCING MOLDED BODIES FROM REACTION-TIED SILICON NITRIDE BY NITRIDING AT HIGH NITROGEN GAS PRESSURE |
| EP0298084A4 (en) * | 1986-03-14 | 1989-10-27 | Commw Scient Ind Res Org | Method of forming a ceramic product. |
| JP2697759B2 (en) * | 1989-03-17 | 1998-01-14 | 日本碍子株式会社 | Silicon nitride sintered body and method for producing the same |
| US5049530A (en) * | 1989-12-28 | 1991-09-17 | Gte Laboratories Incorporated | Power mixture and green body for producing silicon nitride base & articles of high fracture toughness and strength |
-
1994
- 1994-09-14 US US08/305,640 patent/US5510304A/en not_active Expired - Lifetime
- 1994-09-16 WO PCT/US1994/010336 patent/WO1995008519A2/en active Application Filing
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