US6275295B1 - Optical system for determining physical characteristics of a solar cell - Google Patents
Optical system for determining physical characteristics of a solar cell Download PDFInfo
- Publication number
- US6275295B1 US6275295B1 US09/302,727 US30272799A US6275295B1 US 6275295 B1 US6275295 B1 US 6275295B1 US 30272799 A US30272799 A US 30272799A US 6275295 B1 US6275295 B1 US 6275295B1
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- United States
- Prior art keywords
- cell
- light
- optical system
- intensity
- reflection
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
- G01N21/474—Details of optical heads therefor, e.g. using optical fibres
Definitions
- This invention relates to an optical system for monitoring the optical quality of solar cells, and more particularly to a reflectance measuring system for use in monitoring the surface texture, metallization, and anti-reflective coating of solar cells in commercial production.
- Texture-etching is used to improve the light trapping ability of a solar cell, by reducing the surface reflectance over a broad light spectrum. Texture-etching is also used to remove any saw damage to the surface of a cell. Deposition of a dielectric-film layer, over the textured surface, is used to further reduce reflectance.
- Metallization of the cell includes alloying an aluminum back contact, and screen printing a front metal contact to the cell.
- Various optical systems are available for monitoring the physical characteristics of a photocell.
- many of these systems measure sample reflectance in a light integrating sphere.
- the light reflected from the sample is measured spectroscopically.
- an integrating sphere is provided to receive light, from a light source, through an entrance port.
- the diffusely reflecting interior walls, of the sphere reflect the light in multiple reflections, such that a uniform diffuse illumination is provided over the interior surface of the integrating sphere.
- the integrating sphere is provided with a port designed to receive a sample, the color of which is to be measured.
- an integrating sphere is used to analyze a small sample area, because the sample, itself, disrupts integration of the illumination. Because commercially sized samples have a large, 4 by 4 inch, surface, it would be necessary to provide an unreasonably large integrating sphere, to rapidly monitor the surface area of a solar cell.
- One lamp is located on each side of the dome.
- An exit aperture and lens assembly is located at the top of the dome for emitting the reflection.
- a highly absorbing sample support At the base of the dome, diametrically opposed to the exit aperture is a highly absorbing sample support.
- the support is covered with small-grain polycrystalline sheets, etched and layered with a Si 3 N 4 deposit, in order to reduce reflectance.
- Located at the top of the dome is a monochromator and detector, connected to a display device. The display generates a reflection intensity distribution curve for the reflection.
- the absorbing and light integrating spheres are similar in construction, but the absorbing sphere must function to eliminate all, extraneous, scattered light. In doing so, the normal reflection is the only light detected.
- the major extraneous light-scattering source, in an absorbing sphere, is the cell support. While etching a fine grain polycrystalline silicon wafer and depositing a layer of Si 3 N 4 has produced a non-reflecting support, the monitoring system, according to this invention, provides a significantly different light absorbing baffle and a non-reflecting chuck in lieu of the silicon wafer support. Other significant differences are also included.
- This invention provides for an increase in the spectrum of projected light in order to generate a reflection from the back-side-contact, is able to monitor the area, thickness, and symmetry of a front-contact, and, because some venders produce cells having a specular surface, is able to monitor the characteristics of a cell having a polished or specular finish. These improvements are desirable in a system, which is useful, to monitor the texture, antireflective film, and metallization properties of solar cells in commercial production.
- Another object of the invention is to provide an optical system for precisely comparing the optical properties of solar cells after sawing, texturing, cleaning, antireflective coating, and metallization fabrication steps with a predetermined value.
- Another object of the invention is to provide an improved system to determine dielectric film thickness.
- Another object of the invention is to provide an improved system to determine the surface texture of a solar cell.
- the invention provides an improved optical system for determining the physical characteristics of a solar cell.
- the system comprises a lamp means for projecting light in a wide solid-angle onto the surface of the cell; a chamber for receiving the light through an entrance port, the chamber having an interior light absorbing spherical surface, an exit port for receiving a beam of light reflected substantially normal to the cell, a cell support, and an lower aperture for releasing light into a light absorbing baffle; a means for dispersing the reflection into monochromatic components; a means for detecting an intensity of the components; and a means for reporting the determination.
- FIG. 1 is a sectional view of one embodiment of the optical system according to the present invention.
- FIG. 2 is a sectional view of the optical system illustrated in FIG. 1 showing the mode of operation for imaging a sample.
- FIG. 3 is a sectional view of the optical system illustrated in FIG. 1 showing a variant of the lamp arrangement together with a diffuser for determining specular reflection.
- FIG. 4 is a reflection intensity distribution curve showing a comparison of the reflection intensity of four samples, during the sawed/cleaned, texture/etched, and film-coating fabrication steps.
- FIG. 5 a is a sectional view of a silicon solar cell having an aluminum back-contact, and a front metal-contact.
- FIG. 5 b is a three dimensional view of the solar cell illustrated in FIG. 5 a showing the bus-bar and finger elements of the front metal-contact.
- FIG. 6 is a reflection intensity distribution curve showing a comparison of the reflection intensity resulting from a high, and low, quality backside-contact.
- FIG. 7 is a reflection intensity distribution curve showing a comparison of three solar cells using asymmetric illumination to determine front-metallization.
- Reflectometer 10 includes a spherical chamber 22 , which is preferably an 18 inch diameter dome. Chamber 22 includes an exit aperture 24 and a diametrically opposed lower aperture 26 , which serves as a sample port. Lamps 33 ( 1 - 4 ) project incident light 32 at sample 14 in a wide solid-angle of direction. A solid angle is a measure of the angle subtended at the vertex of a cone. Exit aperture 24 is included for emitting a beam of light 40 which is reflected normal to the sample 14 .
- the interior surfaces of the absorbing chamber 22 , baffle 11 , and post 15 are roughened, and coated with a non-reflective light absorbing coating, such as flat-black paint. This treatment is used to insure that stray light 40 - 1 , 32 - 1 (e.g. light not reflecting normal to the sample 14 the surface) is substantially absorbed, without an inadvertent reflection passing through the exit port 24 .
- the lower aperture 26 is 8 inches in diameter and circumferentially disposed about the silicon sample 14 .
- a vacuum chuck 12 is positioned below the lower aperture 26 to secure the sample 14 for analysis.
- the chuck 12 is smaller in size than the sample 14 to be characterized prevent the scattering of light 32 , by the chuck 12 .
- the chuck 12 is supported on a movable post 15 , which aids in the positioning of sample 14 within aperture 26 for illumination.
- the light 32 is projected into the chamber 22 via an entrance port 13 , and is generated with lamp sources 33 - 1 , 2 , such as two ENH tungsten-halogen lamps, one on each side of the chamber 22 .
- the lamps have an elliptical metallic beck reflector 35 formed by lining the inside of an existing dichroic reflector with an aluminum foil such that the projected light 32 is in a 400-1200 nm spectral range.
- the lower aperture 26 is positioned in diametric alignment with the exit port 24 .
- the light absorbing baffle 11 traps light 32 - 1 passing, sample 14 , through aperture 26 in an outward direction from the chamber.
- sample 14 is positioned on the vacuum chuck 12 , a vacuum is applied, and post 15 is raised such that the sample 14 is circumferentially disposed within the lower aperture 26 , of the chamber 22 .
- the sample 14 is illuminated thereby causing the emission of reflected beam 40 , outwardly, through the exit aperture 24 .
- the exit port 24 is associated with a lens assembly 49 for convergence of the reflected beam 40 .
- a fiber-optic-cable 42 transmits light beam 40 for dispersion, detection, determination, and reporting 115 .
- fiber optic cable 42 is connected to a monochromator 120 , or a filter wheel 130 and servo motor 133 assembly.
- the fiber optic cable 42 yields a high signal to noise ratio. A strong signal is necessary to determine the precise optical differences among samples.
- Monochromator 120 or filter wheel 130 disperses reflection 40 into its monochromatic components 125 .
- the components 125 are detected by photo-detectors 122 which generate a, computer-receptive, signal 128 relative to the intensity of the detected component.
- the respective intensity for each monochromic component is stored in the memory of a computer 150 .
- the computer 150 determines the relationship between the intensity of the detected reflection and wavelength for each monochromatic component, a thickness of the dielectric film, and the metallization of the sample cell 14 .
- a computerized report illustrates a reflection intensity distribution curve. The report is useful in making a comparison of the surface texture, film thickness, and metallization properties of a sample with a predetermined result. The result maybe, a standard reflection intensity distribution curve, film thickness, or metallization value, which is stored in the RAM or ROM of the computer 150 .
- Display 152 illustrates the determination, and is used to sequentially monitor the physical quality of solar cells throughout the fabrication process.
- FIG. 2 it is generally shown therein a sectional view of the optical system illustrated in FIG. 1, as modified to display an image of the sample.
- slidable mirror or prism 50 is located into the path of reflected beam 40 .
- Beam 40 is, thereby, deflected in the direction of a digital camera 52 and its zoom lens 54 .
- Those rays, which fall in the path of the field-of-view of the camera 52 become the object image from, which a real image of sample 14 is created.
- the real image may be viewed on a control monitor (not shown), associated with the video camera 52 .
- An optical filter (not shown) may be located in the optical path of the camera, to provide a variety of useful information.
- camera 52 may also include a provision for a video tape recording, or input into the memory of computer 150 , for permanent documentation of the image.
- Reflectometer 10 of FIG. 1, is the basic embodiment of the invention.
- the invention may include a modification which is useful to characterize a sample having a specular sample.
- a specular sample is one having a smooth or polished surface.
- FIG. 3 a sectional view of the optical system illustrated in FIG. 1, is shown, together with the modification for determining the normal reflection to a specular sample.
- Spherical chamber 22 further includes a diffuse reflector 28 .
- the reflector 28 is circumferentially disposed about the exit port 24 of the chamber 22 .
- lamps 33 - 5 , 6 are provided, with elliptical reflectors 35 , below the horizontal axis 60 , of the chamber 22 .
- Projected light rays 32 from lamps 33 - 5 , 6 , pass through converging lenses 30 in the direction of diffuser 28 , such that rays 32 fall upon a specular sample 14 - 1 , in a direction substantially normal to the surface of the cell. Reflected beam 40 is then emitted through exit port 24 for imaging 52 , or dispersion, detection, determination and reporting 115 , as described above.
- FIG. 4 a reflection intensity distribution curve is shown for comparison, of the optical quality, of four commercially sized, 4.5 ⁇ 4.5 inch, photovoltaic silicon wafers (shown as variations in line).
- the curve represents the determined reflection intensity of the normal reflection, plotted versus the wavelength, for each monochromatic component.
- the samples were monitored using the optical system of FIG. 1, Symmetric illumination was provided with lamps 33 - 1 and 33 - 2 , of FIG. 1 .
- curves 4 - 1 illustrate the reflectance of the samples after texture-etching
- curves 4 - 2 illustrate reflectance of the samples after sawing and cleaning
- curves 4 - 3 illustrate reflectance of the sample results after deposition of a TiO 2 antireflective-film coating.
- the sawing/cleaning fabrication step 4 - 2 demonstrates a high precision, sample to sample.
- the texture/etching step 4 - 1 is less precise.
- the antireflective-film coating step 4 - 3 has partially mitigated the variance attributable to the texture/etching step.
- the curves to the right of line 4 - 5 illustrate reflectance of the back-side contact.
- the graph was obtained over a 15 second interval. This interval included mounting and dismounting the sample, dispersion, detection, determination, and display of the results.
- the test measured reflectance over the full surface of the cell.
- FIG. 5 a A cross section of a typical solar cell 14 is shown in FIG. 5 a .
- the aluminum back-contact 14 a supports a silicon layer 14 b .
- Dielectric film 14 c overlays silicon layer 14 b .
- the front contact 14 d is screen printed over the silicon layer 14 b .
- the front contact includes a bus bar 14 d - 1 and finger 14 d - 2 configuration, in an asymmetric pattern.
- the optical characteristics of the front contact 14 d change with the rotational orientation of the sample 14 , on the sample support 12 , of FIG. 1 .
- a good quality silicon-aluminum back-contact exhibits a very high reflectance.
- a determination of the quality of the back-contact is made by illuminating sample 14 with lamps 33 - 1 , 2 , and comparing the reported distribution curve obtained with that of a predetermined value, such as 90% reflectance.
- FIG. 6 is a reflectance intensity distribution curve, showing the difference in the back-side reflectance of three sample cells: A silicon control 6 - 2 , a high-quality aluminum-contact 6 - 1 , and a low-quality aluminum-contact 6 - 3 . As the wavelength increases, there is greater penetration of the projected light into the silicon. As shown in FIG.
- the configuration, and reflectance, of the front metal contact allows for a determination of the metal surface area, thickness, and symmetry. Symmetry is used to define the orientation of the printed metal pattern 14 d , as the sample 14 is rotated 90 degrees on the sample support. Reflection intensity of the front contact 14 d , is equal to the sum of the reflectance from bus bar 14 d - 1 and finger 14 d - 2 elements.
- Ra is the reflectance from the metal, upper, surfaces (area) of elements 14 d - 1 and 14 d - 2 .
- Rb is the reflectance from light scattered by the step (thickness) surfaces of elements 14 d - 1 and 14 d - 2 .
- FIG. 5 b it can be seen a three dimensional view of the solar cell illustrated in FIG. 5 a .
- the above configuration taken in conjunction with directional illumination, can be used to determine the area, thickness, and symmetry of the front metal-contact 14 d .
- the sample surface 14 c , 14 d ( 1 - 2 ) is illuminated with lamps 33 -( 1 - 4 ), from all angles (symmetric illumination, not shown), a 90-degree rotation of the sample, on the support, will not cause a change in the total reflectance (Rt).
- the reflectance Rb is primarily due to the upper surface of the bus bar (metal area).
- the reflectance Rb is now primarily due to the upper surface of the finger elements 14 d - 2 .
- FIG. 7 it is shown, therein, a reflection intensity distribution curve for three solar cells in order to determine the symmetry of the front metal-contact.
- solid-line 7 - 3 is the reflectance (in arbitrary units) from a cell without front metallization; line 7 - 1 shows the reflectance from symmetric illumination, parallel to the bus-bar; and line 7 - 2 shows the reflectance from asymmetric illumination, perpendicular to the bus-bar.
- Rt is the total reflectance
- Rm is the reflectance of the metal
- Rnm is the reflectance of the non-metal
- Ra and Rb is the reflectance related to the area and thickness of the metal (step), respectively
- Rsi is the reflectance of the silicon
- Rar/si is the reflectance of the silicon and antireflective coating 14 c , if any.
- x% is the area covered by the silicon Rsi, or coated 14 - c silicon fraction Rar/si, of the cell.
- Rm is equal to Ra.
- Ra is a predictable constant, based on a predetermined result, and Rb varies with the direction of illumination.
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- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (22)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/302,727 US6275295B1 (en) | 1999-04-30 | 1999-04-30 | Optical system for determining physical characteristics of a solar cell |
AU46422/00A AU4642200A (en) | 1999-04-30 | 2000-04-07 | Optical system for determining physical characteristics of solar cell |
PCT/US2000/009443 WO2000067001A1 (en) | 1999-04-30 | 2000-04-07 | Optical system for determining physical characteristics of a solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/302,727 US6275295B1 (en) | 1999-04-30 | 1999-04-30 | Optical system for determining physical characteristics of a solar cell |
Publications (1)
Publication Number | Publication Date |
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US6275295B1 true US6275295B1 (en) | 2001-08-14 |
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Application Number | Title | Priority Date | Filing Date |
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US09/302,727 Expired - Lifetime US6275295B1 (en) | 1999-04-30 | 1999-04-30 | Optical system for determining physical characteristics of a solar cell |
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US (1) | US6275295B1 (en) |
AU (1) | AU4642200A (en) |
WO (1) | WO2000067001A1 (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6583879B1 (en) * | 2002-01-11 | 2003-06-24 | X-Rite, Incorporated | Benchtop spectrophotometer with improved targeting |
WO2005036601A2 (en) * | 2003-10-07 | 2005-04-21 | Midwest Research Institute | Wafer characteristics via reflectomeytry and wafer processing apparatus and method |
US20060063262A1 (en) * | 2003-03-14 | 2006-03-23 | Sopori Bhushan L | Wafer characteristics via reflectometry |
WO2008062953A1 (en) * | 2006-11-22 | 2008-05-29 | Lg Electronics Inc. | Method for manufacturing solar cell and solar cell manufactured by the method |
US20080165349A1 (en) * | 2007-01-09 | 2008-07-10 | Hon Hai Precision Industry Co., Ltd. | Apparatus for testing reflectivity of lens |
US20080206899A1 (en) * | 2007-02-26 | 2008-08-28 | Nec Electronics Corporation | Method of manufacturing semiconductor device using electrochemical deposition with electric current revised by reflectance of every substrate surface and semiconductor manufacturing apparatus |
US20100142796A1 (en) * | 2008-12-05 | 2010-06-10 | Jen-Ming Chang | Inspection method and apparatus for substrate |
US20120182545A1 (en) * | 2009-09-09 | 2012-07-19 | Von Ardenne Anlagentechnik Gmbh | Method and device for measuring optical characteristic variables of transparent, scattering measurement objects |
EP2532947A1 (en) * | 2011-06-07 | 2012-12-12 | ADLER Solar Services GmbH | Test device for measuring the function of a solar module and test vehicle |
WO2013150424A1 (en) | 2012-04-02 | 2013-10-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Optical method of mapping the crystal orientation of a sample |
US20130271764A1 (en) * | 2010-09-30 | 2013-10-17 | Carl Zeiss Microscopy Gmbh | Measurement devices and apparatuses for spectroscopic examination of samples |
US9234843B2 (en) | 2011-08-25 | 2016-01-12 | Alliance For Sustainable Energy, Llc | On-line, continuous monitoring in solar cell and fuel cell manufacturing using spectral reflectance imaging |
US10480935B2 (en) | 2016-12-02 | 2019-11-19 | Alliance For Sustainable Energy, Llc | Thickness mapping using multispectral imaging |
US10684128B2 (en) | 2015-03-09 | 2020-06-16 | Alliance For Sustainable Energy, Llc | Batch and continuous methods for evaluating the physical and thermal properties of films |
DE102006045285B4 (en) * | 2006-09-22 | 2021-03-04 | Byk-Gardner Gmbh | Device for the investigation of surface properties with indirect lighting |
US11543359B2 (en) * | 2020-02-12 | 2023-01-03 | Dexerials Corporation | Measuring apparatus and film forming apparatus |
Families Citing this family (2)
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FR2869994B1 (en) * | 2004-05-04 | 2009-05-22 | Centre Nat Rech Scient Cnrse | DEVICE AND METHOD FOR MEASURING THE REFLECTIVITY OF A SOLAR CELL |
US20170163213A1 (en) * | 2014-06-30 | 2017-06-08 | Brookhaven Science Associates, Llc | Method and Device to Measure Electric Parameters Over Delimited Areas of a Photovoltaic Module |
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-
2000
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- 2000-04-07 AU AU46422/00A patent/AU4642200A/en not_active Abandoned
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Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
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US6583879B1 (en) * | 2002-01-11 | 2003-06-24 | X-Rite, Incorporated | Benchtop spectrophotometer with improved targeting |
US7815862B2 (en) | 2003-03-14 | 2010-10-19 | Alliance For Sustainable Energy, Llc | Wafer characteristics via reflectometry |
US20060063262A1 (en) * | 2003-03-14 | 2006-03-23 | Sopori Bhushan L | Wafer characteristics via reflectometry |
WO2005036601A2 (en) * | 2003-10-07 | 2005-04-21 | Midwest Research Institute | Wafer characteristics via reflectomeytry and wafer processing apparatus and method |
WO2005036601A3 (en) * | 2003-10-07 | 2005-08-18 | Midwest Research Inst | Wafer characteristics via reflectomeytry and wafer processing apparatus and method |
US20060219678A1 (en) * | 2003-10-07 | 2006-10-05 | Sopori Bhushan L | Wafer characteristics via reflectometry and wafer processing apparatus and method |
US7238912B2 (en) | 2003-10-07 | 2007-07-03 | Midwest Research Institute | Wafer characteristics via reflectometry and wafer processing apparatus and method |
DE102006045285B4 (en) * | 2006-09-22 | 2021-03-04 | Byk-Gardner Gmbh | Device for the investigation of surface properties with indirect lighting |
US7838761B2 (en) | 2006-11-22 | 2010-11-23 | Lg Electronics Inc. | Method for manufacturing solar cell and solar cell manufactured by the method |
US20110017290A1 (en) * | 2006-11-22 | 2011-01-27 | Seongeun Lee | Method for manufacturing solar cell and solar cell manufactured by the method |
US20100018573A1 (en) * | 2006-11-22 | 2010-01-28 | Lg Electronics Inc. | Method for manufacturing solar cell and solar cell manufactured by the method |
US8426723B2 (en) | 2006-11-22 | 2013-04-23 | Lg Electronics Inc. | Solar cell |
WO2008062953A1 (en) * | 2006-11-22 | 2008-05-29 | Lg Electronics Inc. | Method for manufacturing solar cell and solar cell manufactured by the method |
US20080165349A1 (en) * | 2007-01-09 | 2008-07-10 | Hon Hai Precision Industry Co., Ltd. | Apparatus for testing reflectivity of lens |
US20080206899A1 (en) * | 2007-02-26 | 2008-08-28 | Nec Electronics Corporation | Method of manufacturing semiconductor device using electrochemical deposition with electric current revised by reflectance of every substrate surface and semiconductor manufacturing apparatus |
US7854824B2 (en) * | 2007-02-26 | 2010-12-21 | Renesas Electronics Corporation | Method of manufacturing semiconductor device using electrochemical deposition with electric current revised by reflectance of every substrate surface and semiconductor manufacturing apparatus |
US20100142796A1 (en) * | 2008-12-05 | 2010-06-10 | Jen-Ming Chang | Inspection method and apparatus for substrate |
US20120182545A1 (en) * | 2009-09-09 | 2012-07-19 | Von Ardenne Anlagentechnik Gmbh | Method and device for measuring optical characteristic variables of transparent, scattering measurement objects |
US8259294B2 (en) * | 2009-09-09 | 2012-09-04 | Von Ardenne Anlagentechnik Gmbh | Method and device for measuring optical characteristic variables of transparent, scattering measurement objects |
US20130271764A1 (en) * | 2010-09-30 | 2013-10-17 | Carl Zeiss Microscopy Gmbh | Measurement devices and apparatuses for spectroscopic examination of samples |
EP2532947A1 (en) * | 2011-06-07 | 2012-12-12 | ADLER Solar Services GmbH | Test device for measuring the function of a solar module and test vehicle |
US9234843B2 (en) | 2011-08-25 | 2016-01-12 | Alliance For Sustainable Energy, Llc | On-line, continuous monitoring in solar cell and fuel cell manufacturing using spectral reflectance imaging |
WO2013150424A1 (en) | 2012-04-02 | 2013-10-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Optical method of mapping the crystal orientation of a sample |
US10684128B2 (en) | 2015-03-09 | 2020-06-16 | Alliance For Sustainable Energy, Llc | Batch and continuous methods for evaluating the physical and thermal properties of films |
US10480935B2 (en) | 2016-12-02 | 2019-11-19 | Alliance For Sustainable Energy, Llc | Thickness mapping using multispectral imaging |
US11543359B2 (en) * | 2020-02-12 | 2023-01-03 | Dexerials Corporation | Measuring apparatus and film forming apparatus |
Also Published As
Publication number | Publication date |
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WO2000067001A1 (en) | 2000-11-09 |
AU4642200A (en) | 2000-11-17 |
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