TWI775142B - Substrate processing apparatus, manufacturing method and program of semiconductor device - Google Patents

Substrate processing apparatus, manufacturing method and program of semiconductor device Download PDF

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TWI775142B
TWI775142B TW109130887A TW109130887A TWI775142B TW I775142 B TWI775142 B TW I775142B TW 109130887 A TW109130887 A TW 109130887A TW 109130887 A TW109130887 A TW 109130887A TW I775142 B TWI775142 B TW I775142B
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maintenance
processing
prescription
recipe
semiconductor device
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TW202135131A (en
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守田修
久保修一
山岡雄治
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日商國際電氣股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

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  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
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Abstract

本發明的課題是在於提供一種可使成膜處理開始時的爐內的狀況安定化的技術。 其解決手段為具有備妥處理爐內的處理環境的前處理工程、處理基板的成膜工程及後處理工程之技術，在前處理工程的第一步驟中，判定是否實行構成裝置的零件之保養處方。The subject of this invention is to provide the technique which can stabilize the condition in the furnace at the time of starting a film-forming process. The solution is to have a pre-processing process for preparing the processing environment in the processing furnace, a film-forming process for processing substrates, and a post-processing process. In the first step of the pre-processing process, it is determined whether or not to perform maintenance of the parts constituting the device. prescription.

Description

基板處理裝置，半導體裝置的製造方法及程式Substrate processing apparatus, manufacturing method and program of semiconductor device

本案是有關基板處理裝置，半導體裝置的製造方法及程式。This case relates to a substrate processing apparatus, a manufacturing method and a program of a semiconductor device.

在基板處理裝置的一種的半導體製造裝置中，實施成膜處理之前或實施之後是某些的維修處理會被實施。在此，所謂維修處理是存在各種除去爐內的副生成物的處理或用以將爐內的環境維持於特定條件的淨化處理等。近來為了提升裝置生產性(為了縮短裝置停機時間)，自動實行維修處理的機能成為必須。In a semiconductor manufacturing apparatus, which is one type of substrate processing apparatus, some maintenance processes are performed before or after the film formation process is performed. Here, the maintenance treatment includes various treatments for removing by-products in the furnace, purification treatment for maintaining the environment in the furnace under specific conditions, and the like. Recently, in order to improve the productivity of the plant (in order to reduce the downtime of the plant), a function of automatically performing maintenance processing has become necessary.

例如，在專利文獻1是記載一旦監視對象的裝置資料的現在值到達預定的條件，則使發出警報且實行洗滌處方。又，例如，專利文獻2是記載即使在成膜步驟前的準備步驟發生錯誤，也會在成膜步驟的前頭步驟進行錯誤處理。For example, Patent Document 1 describes that when the current value of the device data to be monitored reaches a predetermined condition, an alarm is issued and a washing prescription is executed. Also, for example, Patent Document 2 describes that even if an error occurs in the preparation step before the film formation step, error processing is performed in the step before the film formation step.

然而，一旦現在值到達預定的臨界值，而維修處理自動被實行，則在成膜處理開始時的爐內的狀況會有產生變化的情形。 [先前技術文獻] [專利文獻]However, once the current value reaches a predetermined critical value and the maintenance process is automatically performed, the situation in the furnace at the start of the film formation process may change. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本特許2019-114783號公報 [專利文獻2]日本特許2015-162628號公報[Patent Document 1] Japanese Patent No. 2019-114783 [Patent Document 2] Japanese Patent No. 2015-162628

(發明所欲解決的課題)(The problem to be solved by the invention)

本案的目的是在於提供一種可使成膜處理開始時的爐內的狀況安定化的技術。 (用以解決課題的手段)The purpose of this application is to provide a technique that can stabilize the conditions in the furnace at the start of the film formation process. (means to solve the problem)

若根據本案之一形態，則提供一種具有備妥處理爐內的處理環境的前處理工程、處理基板的成膜工程及後處理工程之技術，在前述前處理工程的第一步驟中，可判定是否實行維修構成裝置的零件之保養處方。 [發明的效果]According to one aspect of the present application, there is provided a technology including a pre-processing process for preparing a processing environment in a processing furnace, a film-forming process for processing a substrate, and a post-processing process. In the first step of the pre-processing process, it can be determined that Whether to implement maintenance prescriptions for repairing the parts that make up the device. [Effect of invention]

若根據本案的技術，則可將爐內的成膜前狀況設為同一條件，可取得成膜安定性。According to the technique of this application, the conditions before film formation in the furnace can be set to the same conditions, and the film formation stability can be obtained.

(基板處理裝置的概要)(Outline of substrate processing apparatus)

其次，根據圖1、圖2說明本案的實施形態。在本案所適用的實施形態中，基板處理裝置是被構成為實施半導體裝置(IC)的製造方法的處理裝置之基板處理裝置，作為一例。另外，在以下的說明中，敘述有關適用縱型的裝置(以下簡稱處理裝置)作為基板處理裝置的情況，其係對基板進行擴散處理或CVD處理等。Next, an embodiment of the present invention will be described with reference to FIGS. 1 and 2 . In the embodiment to which this application is applied, the substrate processing apparatus is, as an example, a substrate processing apparatus configured as a processing apparatus for implementing a method of manufacturing a semiconductor device (IC). In addition, in the following description, the case where a vertical type apparatus (hereinafter referred to as a processing apparatus) is applied as a substrate processing apparatus, which performs diffusion processing, CVD processing, or the like on a substrate, will be described.

如圖1、圖2所示般，基板處理裝置10是具備作為鄰接的2個後述的處理爐202的處理模組。處理模組是一次處理數十片的作為基板的晶圓200的縱型處理模組。以下，構成處理裝置10的零件是例如除了包含構成處理爐202內的零件、分別被配置於搬送室6、移載室8的零件等以外，有也包含處理裝置10本身的情況。As shown in FIGS. 1 and 2 , the substrate processing apparatus 10 is a processing module including two adjacent processing furnaces 202 which will be described later. The processing module is a vertical processing module that processes dozens of wafers 200 serving as substrates at a time. Hereinafter, the components constituting the processing apparatus 10 may include, for example, the processing apparatus 10 itself, in addition to the components constituting the processing furnace 202 and the components disposed in the transfer chamber 6 and the transfer chamber 8, respectively.

在處理爐202的下方是配置有作為準備室的搬送室6A、6B。在搬送室6A、6B的正面側，具有移載作為基板的晶圓200的移載機125的移載室8會與搬送室6A、6B鄰接配置。另外，在本實施形態中，說明在搬送室6A、6B的上方分別設有後述的處理爐202的構成。Below the processing furnace 202, transfer chambers 6A and 6B as preparation chambers are arranged. On the front side of the transfer chambers 6A, 6B, the transfer chamber 8 having the transfer machine 125 that transfers the wafer 200 as a substrate is arranged adjacent to the transfer chambers 6A, 6B. In addition, in this embodiment, the structure which provided the processing furnace 202 mentioned later above the conveyance chambers 6A, 6B, respectively, is demonstrated.

在移載室8的正面側是設有收納晶圓傳送盒(FOUP)110的收納室9(晶圓傳送盒搬送空間)，該晶圓傳送盒是作為收容複數片晶圓200的收容容器。在收納室9的全面是設置有作為I/O埠的裝載埠22，經由裝載埠22來將晶圓傳送盒110搬出入於處理裝置2內外。On the front side of the transfer chamber 8 is a storage chamber 9 (a FOUP transfer space) that houses a FOUP 110 as a storage container for storing a plurality of wafers 200 . A loading port 22 serving as an I/O port is provided on the entire surface of the storage chamber 9 , and the wafer transfer cassette 110 is carried in and out of the processing apparatus 2 through the loading port 22 .

在搬送室6A、6B與移載室8的境界壁(鄰接面)是設置有作為隔離部的閘閥90A、90B。在移載室8內及搬送室6A、6B內是分別設置有壓力檢測器，移載室8內的壓力是被設定為比搬送室6A、6B內的壓力更低。並且，在移載室8內及搬送室6A、6B內是分別設置有氧濃度檢測器，移載室8A內及搬送室6A、6B內的氧濃度是被維持比大氣中的氧濃度更低。理想是被維持於30ppm以下。Gate valves 90A and 90B as partitions are provided on boundary walls (adjacent surfaces) of the transfer chambers 6A and 6B and the transfer chamber 8 . Pressure detectors are provided in the transfer chamber 8 and in the transfer chambers 6A and 6B, respectively, and the pressure in the transfer chamber 8 is set to be lower than the pressure in the transfer chambers 6A and 6B. In addition, oxygen concentration detectors are installed in the transfer chamber 8 and in the transfer chambers 6A and 6B, respectively, and the oxygen concentration in the transfer chamber 8A and in the transfer chambers 6A and 6B is maintained lower than the oxygen concentration in the atmosphere. . Ideally, it should be kept below 30 ppm.

在移載室8的頂部是被構成為設置有對移載室8內供給淨化空氣的淨化單元(未圖示)，在移載室8內使淨化空氣例如惰性氣體循環。藉由以惰性氣體來循環淨化移載室8內，可將移載室8內設為清淨的氣氛。At the top of the transfer chamber 8 is a cleaning unit (not shown) configured to supply clean air into the transfer chamber 8 , and the clean air such as an inert gas is circulated in the transfer chamber 8 . By circulating and purifying the inside of the transfer chamber 8 with the inert gas, the inside of the transfer chamber 8 can be made into a clean atmosphere.

藉由如此的構成，在移載室8內可抑制搬送室6A、6B的粒子等混入至未圖示的處理爐202，在移載室8內及搬送室6A、6B內可抑制自然氧化膜形成於晶圓200上。With such a configuration, in the transfer chamber 8, the particles and the like in the transfer chambers 6A, 6B can be suppressed from being mixed into the processing furnace 202 (not shown), and the natural oxide film in the transfer chamber 8 and the inside of the transfer chambers 6A, 6B can be suppressed. formed on the wafer 200 .

在收納室9的後方、收納室9與移載室8的境界壁是配置複數台例如3台用以開閉晶圓傳送盒110的蓋的晶圓傳送盒開啟器21。藉由晶圓傳送盒開啟器21開啟晶圓傳送盒110的蓋，晶圓傳送盒110內的晶圓200會被搬出入於移載室8內外。Behind the storage chamber 9 , and on the boundary wall between the storage chamber 9 and the transfer chamber 8 , a plurality of, for example, three pod openers 21 for opening and closing the lid of the pod 110 are arranged. The cover of the wafer transfer box 110 is opened by the wafer transfer box opener 21 , and the wafers 200 in the wafer transfer box 110 are carried out into and out of the transfer chamber 8 .

如圖2所示般，收容由矽等所成的複數的晶圓200，使用晶圓傳送盒110的基板處理裝置10是具備作為基板處理裝置本體使用的框體111。As shown in FIG. 2 , a substrate processing apparatus 10 that accommodates a plurality of wafers 200 made of silicon or the like and uses a wafer transfer cassette 110 includes a housing 111 used as a substrate processing apparatus main body.

在框體111的正面壁的正面前方部是開設有被設為可維修的開口部的正面維修口(未圖示)，分別設立用以開閉此正面維修口的正面維修門。並且。在正面壁是晶圓傳送盒搬入搬出口會被開設為連通框體111的內外。晶圓傳送盒搬入搬出口是亦可被構成為藉由前擋門(未圖示)來開閉。The front front part of the front wall of the housing|casing 111 is a front maintenance opening (not shown) provided with the opening part which can be maintained, and the front maintenance door for opening and closing this front maintenance opening is respectively provided. and. On the front wall, the pod loading and unloading port is opened to communicate the inside and outside of the frame body 111 . The loading and unloading outlet of the wafer transfer cassette may also be configured to be opened and closed by a front door (not shown).

在晶圓傳送盒搬入搬出口是設置有作為搬入搬出部使用的裝載埠22，裝載埠22是被構成為載置晶圓傳送盒110來對位。晶圓傳送盒110是在裝載埠22上藉由工程內搬送裝置來搬入，且從裝載埠22上搬出。The loading port 22 used as a loading and unloading part is provided at the loading and unloading port of the wafer transfer pod, and the loading port 22 is configured to place the wafer transfer box 110 for positioning. The wafer transfer cassette 110 is loaded in the loading port 22 by the in-process transfer device, and is transported out from the loading port 22 .

在框體111的正面後方側，跨越晶圓傳送盒搬入搬出口的周邊的上下左右而矩陣狀地配置有收納架(晶圓傳送盒架))105。晶圓傳送盒架105是設置有作為載置晶圓傳送盒的收納部的載置部140。收納部是由該載置部140、及使載置部140水平移動於收納晶圓傳送盒110的待機位置與交接晶圓傳送盒110的交接位置之間的水平移動機構(收容架水平移動機構)所構成。藉由排列於水平方向的同一直線上的複數的獨立的載置部140來構成晶圓傳送盒架105的一段，該晶圓傳送盒架會複數段設置於垂直方向。各載置部140是上下或左右的相鄰的載置部140及其他的哪個載置部140皆可不使同步，獨立水平移動。而且，晶圓傳送盒搬送裝置130是被構成為在與裝載埠22、晶圓傳送盒架105、晶圓傳送盒開啟器21之間搬送晶圓傳送盒110。On the front rear side of the frame body 111 , storage racks (wafer cassette racks)) 105 are arranged in a matrix across the upper, lower, left, and right sides of the periphery of the pod loading and unloading outlet. The pod holder 105 is provided with a placing portion 140 as a accommodating portion on which a pod is placed. The accommodating portion is composed of the placing portion 140 and a horizontal moving mechanism (the accommodating rack horizontal moving mechanism) that horizontally moves the placing portion 140 between the standby position for storing the wafer transfer cassette 110 and the delivery position for transferring the wafer transfer cassette 110 . ) consists of. A section of the wafer transfer cassette 105 is constituted by a plurality of independent mounting portions 140 arranged on the same straight line in the horizontal direction, and the plurality of sections of the wafer transfer cassette are arranged in the vertical direction. Each mounting portion 140 may be an adjacent mounting portion 140 up and down or left and right, and any other mounting portion 140 may be independently horizontally moved without synchronization. Further, the pod transfer device 130 is configured to transfer the pod 110 between the load port 22 , the pod holder 105 , and the pod opener 21 .

框體111內，在副框體119的正面側是跨越上下左右而矩陣狀地設置有晶圓傳送盒架(收容架)105。與框體111的正面後方側的晶圓傳送盒架105同樣地各晶圓傳送盒架105的作為載置晶圓傳送盒的收納部的載置部140是可水平移動，可不使上下或左右的相鄰的載置部140同步，獨立水平移動。晶圓傳送盒架105是被構成為將晶圓傳送盒110分別1個1個載置於複數的載置部140的狀態下保持。Inside the frame body 111 , on the front side of the sub-frame body 119 , wafer cassette racks (accommodating racks) 105 are provided in a matrix across the upper, lower, left, and right sides. Similar to the pod frame 105 on the front rear side of the frame body 111 , the placing portion 140 of each pod frame 105 serving as a accommodating portion for placing the pod can be moved horizontally, and it is not necessary to move vertically or horizontally. The adjacent mounting parts 140 are synchronized and independently moved horizontally. The wafer transfer cassette holder 105 is configured to hold the wafer transfer cassettes 110 one by one on the plural mounting portions 140 .

在副框體119的正面壁119a是用以對於副框體119內搬入搬出晶圓200的晶圓搬入搬出口120會一對上下二段排列於垂直方向而開設，在上下段的晶圓搬入搬出口120是分別設置有一對的晶圓傳送盒開啟器21。在本實施例中，晶圓傳送盒開啟器21是被配置於上下二段，但亦可左右2個設置於水平方向。晶圓傳送盒開啟器21是具備：載置晶圓傳送盒110的載置台122、及將晶圓傳送盒110的蓋裝卸的蓋裝卸機構123。晶圓傳送盒開啟器21是被構成為藉由蓋裝卸機構123來將被載置於載置台122的晶圓傳送盒110的蓋裝卸，藉此開閉晶圓傳送盒110的晶圓出入口。The front wall 119a of the sub-frame body 119 is opened for the wafer loading and unloading ports 120 for loading and unloading the wafers 200 in the sub-frame body 119. A pair of upper and lower stages are arranged in the vertical direction, and the wafers in the upper and lower stages are loaded in. The unloading port 120 is provided with a pair of pod openers 21 , respectively. In this embodiment, the wafer transfer cassette openers 21 are arranged in the upper and lower sections, but the left and right two can be arranged in the horizontal direction. The pod opener 21 includes a mounting table 122 on which the pod 110 is placed, and a lid attaching and detaching mechanism 123 for attaching and detaching the lid of the pod 110 . The pod opener 21 is configured to open and close the wafer inlet and outlet of the pod 110 by attaching and detaching the lid of the pod 110 placed on the mounting table 122 by the lid attaching and detaching mechanism 123 .

副框體119是構成從晶圓傳送盒搬送裝置130或晶圓傳送盒架105的設置空間流體性地隔絕的移載室8。在移載室8的前側區域是設置有晶圓移載機構125，晶圓移載機構125是以可將晶圓200旋轉乃至直動於水平方向的晶圓移載裝置125a及用以使晶圓移載裝置125a昇降的晶圓移載裝置昇降機125b所構成。被構成為藉由該等晶圓移載裝置昇降機125b及晶圓移載裝置125a的連續動作，以晶圓移載裝置125a的鑷子(基板保持體)125c作為晶圓200的載置部，對於晶舟(基板保持具)217裝填(charging)及脫裝(discharging)晶圓200。The sub-frame 119 constitutes the transfer chamber 8 that is fluidly isolated from the installation space of the pod transfer device 130 or the pod rack 105 . In the front area of the transfer chamber 8, a wafer transfer mechanism 125 is provided, and the wafer transfer mechanism 125 is a wafer transfer device 125a capable of rotating or even moving the wafer 200 in a horizontal direction, and a wafer transfer device 125a for moving the wafer 200 in a horizontal direction. The wafer transfer device lifter 125b is constituted by the wafer transfer device lifter 125b in which the circular transfer device 125a is raised and lowered. By the continuous operation of the wafer transfer device lifter 125b and the wafer transfer device 125a, the tweezers (substrate holder) 125c of the wafer transfer device 125a are configured as a mounting portion for the wafer 200. The wafer boat (substrate holder) 217 charges and discharges the wafers 200 .

在移載室8的後側區域是構成有作為經由閘閥90來收容晶舟217而使待機的待機部的搬送室6。在搬送室6的上方是設有在內部構成處理室的處理爐202。處理爐202的下端部是被構成為藉由爐口擋門(shutter)147來開閉。In the rear area of the transfer chamber 8 , the transfer chamber 6 is configured as a standby unit for accommodating the wafer boat 217 via the gate valve 90 and waiting. Above the transfer chamber 6 is a processing furnace 202 that constitutes a processing chamber inside. The lower end portion of the processing furnace 202 is configured to be opened and closed by a furnace mouth shutter 147 .

晶舟217是藉由晶舟昇降機115(未圖示)來昇降，朝處理爐內導入。作為被連結至晶舟昇降機115的昇降台的連結具的手臂(未圖示)是水平地安裝有作為蓋體的密封蓋219，蓋體219是被構成為垂直地支撐晶舟217，可閉塞處理爐202的下端部。晶舟217是具備複數個的保持構件，被構成為在使複數片的晶圓200其中心一致排列於垂直方向的狀態下，分別水平地保持。The wafer boat 217 is raised and lowered by the wafer boat lifter 115 (not shown) and introduced into the processing furnace. A sealing cover 219 as a cover body is horizontally attached to an arm (not shown) that is a coupling device connected to the lift table of the boat lift 115, and the cover body 219 is configured to vertically support the boat 217 and can be closed The lower end portion of the processing furnace 202 . The wafer boat 217 includes a plurality of holding members, and is configured to hold the plurality of wafers 200 horizontally in a state where the centers of the plurality of wafers 200 are aligned in the vertical direction.

(基板處理裝置的處理爐) 如圖3所示般，處理爐202是具有作為加熱手段(加熱機構)的加熱器207。加熱器207是圓筒形狀，藉由被支撐於作為保持板的加熱器底部(未圖示)來垂直地安裝。(Processing furnace of substrate processing apparatus) As shown in FIG. 3 , the processing furnace 202 has a heater 207 as a heating means (heating mechanism). The heater 207 has a cylindrical shape, and is vertically installed by being supported on a heater bottom (not shown) as a holding plate.

在加熱器207的內側是配設有與加熱器207同心圓狀地構成反應容器(處理容器)的反應管203。反應管203是下端部會被開放，上端部會以平坦狀的壁體所閉塞的有頂部的形狀形成。 在反應管203的內部是具備： 被形成圓筒狀的筒部209； 被區劃於筒部209與反應管203之間的噴嘴配置室222； 被形成於筒部209的作為氣體供給口的氣體供給縫隙235； 被形成於筒部209的第1氣體排氣口236；及 被形成於筒部209，且被形成於第1氣體排氣口236的下方的第2氣體排氣口237。 筒部209是下端部會被開放，上端部會以平坦狀的壁體所閉塞的有頂部的形狀形成，被設為在晶圓200的最近包圍晶圓200。在筒部209的內部是形成有處理室201。處理室201是收容作為基板保持具的晶舟217，而構成可處理晶圓200，該基板保持具是可將晶圓200保持於水平姿勢且多段排列於垂直方向的狀態。Inside the heater 207 is disposed a reaction tube 203 which constitutes a reaction vessel (processing vessel) concentrically with the heater 207 . The lower end of the reaction tube 203 is opened, and the upper end is formed in a shape with a top closed by a flat wall. Inside the reaction tube 203 is equipped with: The cylindrical portion 209 is formed; A nozzle arrangement chamber 222 partitioned between the cylindrical portion 209 and the reaction tube 203; a gas supply slit 235 as a gas supply port formed in the cylindrical portion 209; the first gas exhaust port 236 formed in the cylindrical portion 209; and It is formed in the cylindrical portion 209 and is formed in the second gas exhaust port 237 below the first gas exhaust port 236 . The cylindrical portion 209 is formed in a shape with a top whose lower end is opened and an upper end is closed by a flat wall, and is arranged to surround the wafer 200 closest to the wafer 200 . Inside the cylindrical portion 209, a processing chamber 201 is formed. The processing chamber 201 accommodates the wafer boat 217 as a substrate holder in a state capable of holding the wafers 200 in a horizontal posture and arranged in a vertical direction in multiple stages, and constitutes a processable wafer 200 .

反應管203的下端是藉由圓筒體狀的岐管226所支撐。在岐管226的上端部是形成有凸緣，在此凸緣上設置反應管203的下端部而支撐。使O型環等的氣密構件220介於此凸緣與反應管203的下端部之間而將反應管203內形成氣密狀態。The lower end of the reaction tube 203 is supported by a cylindrical manifold 226 . A flange is formed on the upper end of the manifold 226, and the lower end of the reaction tube 203 is provided and supported on the flange. An airtight member 220 such as an O-ring is interposed between the flange and the lower end portion of the reaction tube 203 to make the inside of the reaction tube 203 airtight.

在岐管226的下端的開口部是密封蓋219會經由O型環等的氣密構件220來氣密地安裝，氣密地阻塞反應管203的下端的開口部側、亦即岐管226的開口部。At the opening of the lower end of the manifold 226, the sealing cap 219 is airtightly attached via an airtight member 220 such as an O-ring, and hermetically closes the opening of the lower end of the reaction tube 203, that is, the opening of the manifold 226. opening.

在密封蓋219上是設有支撐晶舟217的晶舟支撐台218。晶舟支撐台218是作為隔熱部機能，且成為支撐晶舟217的支撐體。晶舟217是例如以石英或SiC等的耐熱性材料所構成。晶舟217是具有被固定於未圖示的晶舟支撐台的底板及被配置於其上方的頂板，具有在底板與頂板之間架設複數個的支柱的構成。在晶舟217是保持複數片的晶圓200。複數片的晶圓200是彼此隔開一定的間隔，在保持水平姿勢且彼此中心一致的狀態下被多段地裝載於反應管203的管軸方向，被晶舟217的支柱所支撐。On the sealing cover 219 is a wafer boat support table 218 for supporting the wafer boat 217 . The boat support table 218 functions as a heat insulating portion, and serves as a support for supporting the boat 217 . The wafer boat 217 is made of, for example, a heat-resistant material such as quartz or SiC. The boat 217 has a bottom plate fixed to a boat support stand (not shown) and a top plate arranged above the bottom plate, and has a structure in which a plurality of pillars are spanned between the bottom plate and the top plate. The wafer boat 217 holds a plurality of wafers 200 . A plurality of wafers 200 are spaced apart from each other by a certain interval, are loaded in multiple stages in the tube axis direction of the reaction tube 203 while maintaining a horizontal posture and their centers are aligned with each other, and are supported by the pillars of the wafer boat 217 .

在密封蓋219的與處理室201相反側是設有使晶舟旋轉的晶舟旋轉機構267。晶舟旋轉機構267的旋轉軸265是貫通密封蓋來連接至晶舟支撐台218，藉由晶舟旋轉機構267經由晶舟支撐台218來使晶舟217旋轉而使晶圓200旋轉。On the opposite side of the sealing cover 219 from the processing chamber 201 is a boat rotating mechanism 267 that rotates the boat. The rotating shaft 265 of the boat rotating mechanism 267 is connected to the boat supporting table 218 through the sealing cover, and the wafer 200 is rotated by rotating the wafer boat 217 through the boat supporting table 218 by the boat rotating mechanism 267 .

密封蓋219是藉由被設在反應管203的外部的作為昇降機構的晶舟昇降機115來昇降於垂直方向，藉此可對於處理室201內搬入搬出晶舟217。The sealing cover 219 is moved up and down in the vertical direction by the boat lift 115 as a lift mechanism provided outside the reaction tube 203 , so that the wafer boat 217 can be loaded and unloaded into and out of the processing chamber 201 .

在岐管226中，支撐作為供給處理氣體至處理室201內的氣體噴嘴的噴嘴340a~340d的噴嘴支撐部350a ~350d會貫通岐管226而設置。在此是設置有4個的噴嘴支撐部350a~350d。在噴嘴支撐部350a~350c的反應管203側的一端是分別連接往處理室201內供給氣體的氣體供給管310a~310c。並且，在噴嘴支撐部350d的反應管203側的一端是連接往被形成於反應管203與筒部209之間的間隙S供給氣體的氣體供給管310d。而且，在噴嘴支撐部350a~ 350d的另一端是分別連接噴嘴340a~340d。In the manifold 226 , nozzle support parts 350 a to 350 d that support nozzles 340 a to 340 d serving as gas nozzles for supplying the processing gas into the processing chamber 201 are provided through the manifold 226 . Here, four nozzle support parts 350a to 350d are provided. Gas supply pipes 310 a to 310 c for supplying gas into the processing chamber 201 are connected to one end of the nozzle support parts 350 a to 350 c on the side of the reaction tube 203 , respectively. In addition, one end of the nozzle support portion 350d on the reaction tube 203 side is connected to a gas supply pipe 310d for supplying gas to the gap S formed between the reaction tube 203 and the cylindrical portion 209 . In addition, the nozzles 340a to 340d are connected to the other ends of the nozzle support portions 350a to 350d, respectively.

在氣體供給管310a是從上游方向依序分別設有供給第1處理氣體的第1處理氣體供給源360a、流量控制器(流量控制部)的質量流控制器(MFC)320a及開閉閥的閥330a。在氣體供給管310b是從上游方向依序分別設有供給第2處理氣體的第2處理氣體供給源360b、MFC320b及閥330b。在氣體供給管310c是從上游方向依序分別設有供給第3處理氣體的第3處理氣體供給源360c、MFC320c及閥330c。在氣體供給管310d是從上游方向依序分別設有供給惰性氣體的惰性氣體供給源360d、MFC320d及閥330d。在比氣體供給管310a，310b的閥330a，330b更下游側是分別設有供給惰性氣體的氣體供給管310e，310f。在氣體供給管310e，310f是從上游方向依序分別設有MFC320e，320f及閥330e，330f。The gas supply pipe 310a is a valve provided with a first process gas supply source 360a for supplying the first process gas, a mass flow controller (MFC) 320a of a flow controller (flow rate controller), and an on-off valve, respectively, in this order from the upstream direction. 330a. The gas supply pipe 310b is provided with a second process gas supply source 360b, an MFC 320b, and a valve 330b that supply the second process gas in this order from the upstream direction. The gas supply pipe 310c is provided with a third process gas supply source 360c, an MFC 320c, and a valve 330c for supplying the third process gas in this order from the upstream direction. In the gas supply pipe 310d, an inert gas supply source 360d for supplying an inert gas, an MFC 320d, and a valve 330d are respectively provided in this order from the upstream direction. On the downstream side of the valves 330a and 330b of the gas supply pipes 310a and 310b, gas supply pipes 310e and 310f for supplying the inert gas are provided, respectively. MFCs 320e and 320f and valves 330e and 330f are respectively provided in the gas supply pipes 310e and 310f in this order from the upstream direction.

主要藉由氣體供給管310a、MFC320a、閥330a來構成第1處理氣體供給系。亦可思考將第1處理氣體供給源360a、噴嘴支撐部350a、噴嘴340a含在第1處理氣體供給系中。又，主要藉由氣體供給管310b、MFC320b、閥330b來構成第2處理氣體供給系。亦可思考將第2處理氣體供給源360b、噴嘴支撐部350b、噴嘴340b含在第2處理氣體供給系中。又，主要藉由氣體供給管310c、MFC320c、閥330c來構成第3處理氣體供給系。亦可思考將第3處理氣體供給源360c、噴嘴支撐部350c、噴嘴340c含在第3處理氣體供給系中。又，主要藉由氣體供給管310d、MFC320d、閥330d來構成惰性氣體供給系。亦可思考將惰性氣體供給源360d、噴嘴支撐部350d、噴嘴340d含在惰性氣體供給系中。The first process gas supply system is mainly composed of the gas supply pipe 310a, the MFC 320a, and the valve 330a. The first process gas supply source 360a, the nozzle supporter 350a, and the nozzle 340a can also be considered to be included in the first process gas supply system. Moreover, the 2nd process gas supply system is comprised mainly by the gas supply pipe 310b, MFC320b, and valve 330b. The second process gas supply source 360b, the nozzle support portion 350b, and the nozzle 340b can also be considered to be included in the second process gas supply system. Moreover, the 3rd process gas supply system is comprised mainly by the gas supply pipe 310c, the MFC320c, and the valve 330c. The third process gas supply source 360c, the nozzle supporter 350c, and the nozzle 340c can also be considered to be included in the third process gas supply system. In addition, the inert gas supply system is mainly constituted by the gas supply pipe 310d, the MFC 320d, and the valve 330d. The inert gas supply source 360d, the nozzle supporter 350d, and the nozzle 340d may also be included in the inert gas supply system.

在反應管203是形成有排氣口230。排氣口230是被形成於比第2氣體排氣口237更下方，被連接至排氣管231。排氣管231是經由作為檢測出處理室201內的壓力的壓力檢測器的壓力感測器245及作為壓力調整部的APC(Auto Pressure Controller)閥244來連接作為真空排氣裝置的真空泵246，被構成為可真空排氣成處理室201內的壓力會成為預定的壓力。真空泵246的下游側的排氣管231是被連接至排氣體處理裝置(未圖示)等。另外，APC閥244是可將閥開閉而進行處理室201的真空排氣･真空排氣停止，進一步可調節閥開度來調整傳導而進行處理室201的壓力調整之開閉閥。主要藉由排氣管231、APC閥244、壓力感測器245來構成作為排氣部機能的排氣系。另外，亦可將真空泵246含在排氣系中。An exhaust port 230 is formed in the reaction tube 203 . The exhaust port 230 is formed below the second gas exhaust port 237 and is connected to the exhaust pipe 231 . The exhaust pipe 231 is connected to a vacuum pump 246 as a vacuum exhaust device via a pressure sensor 245 as a pressure detector that detects the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator. It is comprised so that the pressure in the process chamber 201 may become a predetermined pressure, and can be evacuated. The exhaust pipe 231 on the downstream side of the vacuum pump 246 is connected to an exhaust gas treatment device (not shown) or the like. In addition, the APC valve 244 is an on-off valve that can open and close the valve to perform vacuum evacuation and evacuation of the processing chamber 201 , and further adjust the valve opening to adjust conduction to adjust the pressure of the processing chamber 201 . An exhaust system functioning as an exhaust unit is mainly constituted by the exhaust pipe 231 , the APC valve 244 , and the pressure sensor 245 . In addition, the vacuum pump 246 may be included in the exhaust system.

在反應管203內是設置有作為溫度檢測器的溫度感測器(未圖示)，根據藉由溫度感測器所檢測出的溫度資訊，調整往加熱器207的供給電力，藉此被構成為處理室201內的溫度會成為所望的溫度分佈。A temperature sensor (not shown) serving as a temperature detector is installed in the reaction tube 203, and the power supply to the heater 207 is adjusted according to the temperature information detected by the temperature sensor, thereby forming The temperature in the processing chamber 201 becomes a desired temperature distribution.

以上的處理爐202是在被分批處理的複數片的晶圓200對於晶舟217多段地裝載的狀態中，晶舟217會邊被支撐於晶舟支撐台218，邊被***至處理室201，加熱器207會將被***至處理室201的晶圓200加熱至預定的溫度。The above processing furnace 202 is in a state in which a plurality of wafers 200 processed in batches are loaded in multiple stages on the wafer boat 217 , and the wafer boat 217 is inserted into the processing chamber 201 while being supported by the wafer boat support table 218 . , the heater 207 heats the wafer 200 inserted into the processing chamber 201 to a predetermined temperature.

(控制器構成) 如圖4所示般，控制系統240是至少包含主控制部(主控制器)的控制器121、作為處方實行單元的製程系控制器PMC(Process Module Controller)、及作為作業實行單元的搬送系控制器。又，控制器121是連接例如以快閃記憶體、HDD(Hard Disk Drive)等所構成的記憶裝置128或被構成為觸控面板等的作為顯示部的輸出入裝置127。(controller configuration) As shown in FIG. 4 , the control system 240 includes at least a controller 121 of a main control unit (main controller), a process system controller PMC (Process Module Controller) as a recipe execution unit, and a conveyance system as a work execution unit controller. In addition, the controller 121 is connected to, for example, a memory device 128 constituted by a flash memory, an HDD (Hard Disk Drive) or the like, or an input/output device 127 as a display unit constituted by a touch panel or the like.

另外，圖4是處理爐202為2個時的圖示例。以下，製程系控制器PMC是簡稱為PMC。PMC1，2是分別被連接至圖3所示的處理爐202，但PMC2是省略圖示。In addition, FIG. 4 is a diagram example when the number of processing furnaces 202 is two. Hereinafter, the process system controller PMC is abbreviated as PMC. The PMCs 1 and 2 are respectively connected to the processing furnace 202 shown in FIG. 3 , but the illustration of the PMC2 is omitted.

在記憶裝置128內是可讀出地儲存有作為成膜處方的製程處方等，該成膜處方是記載有控制基板處理裝置10的動作的控制程式(作業)、基板處理的程序或條件等。製程處方是被組合為使後述的基板處理工程的各程序實行於PMC，可取得預定的結果者，又，維修處方是在不將晶圓200投入裝置內的狀態下，使維修工程的各程序實行於PMC，例如可保養零件的保養處方。In the memory device 128 , a process recipe and the like are readable and stored as a film formation recipe, and the film formation recipe describes a control program (job) for controlling the operation of the substrate processing apparatus 10 , a program or conditions for substrate processing, and the like. The process recipe is one that is combined so that each procedure of the substrate processing process described later is executed in the PMC, and a predetermined result can be obtained, and the maintenance recipe is the procedure for performing the maintenance process in a state where the wafer 200 is not loaded into the apparatus. Implemented in PMC, such as maintenance prescriptions for serviceable parts.

在記憶裝置128內是又儲存有顯示後述的維修項目(圖6)、維修處理(圖7)的表。該等的表是關聯於上述的保養處方。控制器121是被構成為從記憶部128讀出保養處方及關聯於該保養處方的該等的表，分別下載至PMC。PMC是被構成為將該等表內的資料使用在保養處方的實行。The memory device 128 further stores a table showing maintenance items ( FIG. 6 ) and maintenance processes ( FIG. 7 ) to be described later. These tables are related to the above-mentioned maintenance prescriptions. The controller 121 is configured to read out the maintenance prescription and the tables related to the maintenance prescription from the memory unit 128, and download them to the PMC, respectively. PMC is configured to use the data in these tables in the implementation of maintenance prescriptions.

在記憶裝置128是儲存有藉由實行包含此製程處方的作業(製程作業)來使構成裝置的各零件動作而產生的裝置資料。在該等裝置資料是藉由控制器121的時戳(timestamp)機能而附加有時刻資料。並且，有關包含維修處方(保養處方)的作業(維修作業)也同樣。另外，作業(製程作業或維修作業)是有以下作為主處方處理的情況。副處方是輔助此主處方的處方，例如被使用在重複實行簡單的預定的步驟的情況等。該等是作為程式機能。另外，在本說明書中稱為程式時，有只包含處方單體時、只包含控制程式(作業)單體時、或包含該等的雙方時。In the memory device 128, device data generated by operating each part constituting the device by executing the operation (process operation) including the manufacturing recipe is stored. Time data is attached to the device data by the timestamp function of the controller 121 . In addition, the same applies to the work (maintenance work) including the maintenance prescription (maintenance prescription). In addition, the work (process work or maintenance work) may be handled as a main prescription as follows. The sub-prescription is a prescription that assists the main prescription, and is used, for example, when repeating simple predetermined steps. These are functions as programs. In addition, when it is called a program in this specification, it may contain only a prescription alone, a control program (work) alone, or both of these.

在本實施形態中，藉由PMC實行以前處理、正式處理、後處理的3個步驟所構成的主處方，來進行基板處理的一連串的處理工程。在此，主處方的正式處理是相當於基板處理工程。有關該等前處理、正式處理(基板處理工程)、後處理的各步驟是後述。In the present embodiment, a series of processing steps for substrate processing is performed by the PMC executing a main recipe consisting of three steps of pre-processing, main processing, and post-processing. Here, the actual processing of the main recipe corresponds to the substrate processing process. The steps of these pre-processing, main processing (substrate processing process), and post-processing will be described later.

在此，保養處方是可舉淨化處方、暖機處方、洗滌處方等，按照錯誤的內容來適當選擇而實行。又，亦可按照發生錯誤之處(零件)，預先設定保養處方。該等保養處方實行時的處理爐202內(處理室201)是按照各個的保養處方的內容來任意地設定溫度、氣體流量、電力、壓力等的控制參數的各者。Here, the maintenance prescription includes a cleaning prescription, a warming-up prescription, a washing prescription, and the like, and is appropriately selected and executed according to the wrong contents. Moreover, you may set a maintenance prescription in advance according to the place (part) which an error occurred. In the processing furnace 202 (processing chamber 201 ) when these maintenance prescriptions are executed, each of the control parameters such as temperature, gas flow rate, electric power, and pressure is arbitrarily set according to the content of each maintenance prescription.

在此，裝置資料是如上述般在實行作業時被收集的資料。例如，包含基板處理裝置處理晶圓200時(實行製程處方時)的處理溫度、處理壓力、處理氣體的流量等有關基板處理的資料(例如設定值、實測值)、或有關製造的製品基板的品質(例如成膜後的膜厚及該膜厚的累積值等)的資料、或有關基板處理裝置1的構成零件(反應管、加熱器、閥、MFC等)的資料(例如設定值、實測值)等，在基板處理裝置處理晶圓200時，藉由使各構成零件動作而產生的資料。同樣，在保養基板處理裝置時(實行維修處方時)，藉由使各構成零件動作而產生的資料會含在裝置資料中。Here, the device data is the data collected when the operation is performed as described above. For example, it includes data (such as set values, measured values) related to substrate processing, such as processing temperature, processing pressure, and flow rate of processing gas when the substrate processing apparatus processes the wafer 200 (when executing the process recipe), or data related to the manufactured product substrate. Data on quality (such as film thickness after film formation and cumulative value of the film thickness, etc.), or data on components (reaction tube, heater, valve, MFC, etc.) of the substrate processing apparatus 1 (such as set value, actual measurement, etc.) value), etc., data generated by operating each component when the substrate processing apparatus processes the wafer 200 . Similarly, when the substrate processing apparatus is maintained (when a maintenance prescription is executed), data generated by operating each component is included in the apparatus data.

控制器121是被構成為按照來自輸出入裝置127的操作指令的輸入等，從記憶裝置128讀出製程處方(或保養處方)。控制器121是被構成為經由PMC，按照製程處方的內容，控制MFC320a~320f之各種氣體的流量調整動作、閥330a~330f的開閉動作、APC閥244的開閉動作及根據壓力感測器245之APC閥244的壓力調整動作、真空泵246的起動及停止、根據溫度感測器之加熱器207的溫度調整動作、晶舟旋轉機構267之晶舟217的旋轉及旋轉速度調節動作、晶舟昇降機115之晶舟217的昇降動作等。The controller 121 is configured to read out the process recipe (or maintenance recipe) from the memory device 128 in accordance with the input of an operation command from the input/output device 127 or the like. The controller 121 is configured to control the flow rate adjustment operations of various gases of the MFCs 320a to 320f, the opening and closing operations of the valves 330a to 330f, the opening and closing operations of the APC valve 244, and the operation of the pressure sensor 245 through the PMC according to the content of the process recipe. The pressure adjustment operation of the APC valve 244, the start and stop of the vacuum pump 246, the temperature adjustment operation of the heater 207 according to the temperature sensor, the rotation and rotation speed adjustment operation of the boat 217 of the boat rotation mechanism 267, the boat lift 115 The lifting action of the crystal boat 217, etc.

控制器121是被構成為經由搬送系控制器，按照製程作業的內容，藉由晶圓傳送盒搬送裝置130之裝載埠22、晶圓傳送盒架105及晶圓傳送盒開啟器21之間的晶圓傳送盒110的搬送動作、晶圓傳送盒開啟器21之被載置於載置台122的晶圓傳送盒110的蓋裝卸動作、晶圓移載裝置125之晶圓移載裝置昇降機125b及晶圓移載裝置125a的連續動作，以晶圓移載裝置125a的鑷子(基板保持體)125c作為晶圓200的載置部，控制晶圓200對於晶舟(基板保持具)217的裝填(charging)動作及脫裝(discharging)動作等。The controller 121 is configured through the transport system controller, according to the content of the process operation, through the connection between the loading port 22 of the FOUP transport device 130 , the FOUP frame 105 and the FOUP opener 21 . The transfer operation of the wafer transfer pod 110 , the cover attachment and detachment operation of the wafer transfer pod 110 placed on the mounting table 122 by the wafer transfer pod opener 21 , the wafer transfer device lifter 125 b of the wafer transfer device 125 , and The continuous operation of the wafer transfer device 125a controls the loading ( charging action and discharging action, etc.

(基板處理工程) 其次，利用圖3來說明有關基板處理工程。載置有預定片數的晶圓200的晶舟217會被***至反應管203內(晶舟裝載)，藉由密封蓋219來氣密地閉塞反應管203。在被氣密地閉塞的反應管203內，晶圓200會被加熱，且處理氣體會被供給至反應管203內，對晶圓200進行預定的處理。(Substrate processing process) Next, the substrate processing process will be described with reference to FIG. 3 . The wafer boat 217 on which the predetermined number of wafers 200 are placed is inserted into the reaction tube 203 (wafer loading), and the reaction tube 203 is hermetically closed by the sealing cover 219 . In the reaction tube 203 which is hermetically closed, the wafer 200 is heated, and a process gas is supplied into the reaction tube 203 to perform a predetermined process on the wafer 200 .

作為預定的處理，例如，藉由同時供給PH3氣體作為第1處理氣體及SiH4氣體作為第2處理氣體，在晶圓200上形成Si膜。As a predetermined process, for example, a Si film is formed on the wafer 200 by simultaneously supplying PH3 gas as the first process gas and SiH4 gas as the second process gas.

首先，從第1處理氣體供給系的氣體供給管310a經由噴嘴340a的氣體供給孔234a、氣體供給縫隙235來供給PH3氣體至處理室201，且從第2處理氣體供給系的氣體供給管310b經由噴嘴340b的氣體供給孔234b、氣體供給縫隙235來供給SiH4氣體至處理室201。具體而言，藉由開啟閥330a、330b、330e、330f，與載流氣體一起開始從氣體供給管310a供給PH3氣體及從供給管310b供給SiH4氣體至處理室201。此時，調整APC閥244的開度，將處理室201的壓力維持於預定的壓力。一旦經過預定時間，則關閉閥330a、330b，停止SiH4氣體及PH3氣體的供給。First, the PH3 gas is supplied to the processing chamber 201 from the gas supply pipe 310a of the first processing gas supply system through the gas supply hole 234a and the gas supply slit 235 of the nozzle 340a, and from the gas supply pipe 310b of the second processing gas supply system The gas supply hole 234b and the gas supply slit 235 of the nozzle 340b supply SiH 4 gas to the processing chamber 201 . Specifically, by opening the valves 330a, 330b, 330e, and 330f, the supply of the PH3 gas from the gas supply pipe 310a and the supply of the SiH4 gas from the supply pipe 310b to the processing chamber 201 are started together with the carrier gas. At this time, the opening degree of the APC valve 244 is adjusted to maintain the pressure of the processing chamber 201 at a predetermined pressure. When the predetermined time elapses, the valves 330a and 330b are closed, and the supply of the SiH4 gas and the PH3 gas is stopped.

被供給至處理室201內的SiH4氣體及PH3氣體是被供給至晶圓200，在晶圓200上平行地流動之後，通過第1氣體排氣口236來從上部往下部流動於間隙S，經由第2氣體排氣口237、排氣口230來從排氣管231排氣。The SiH 4 gas and PH 3 gas supplied into the processing chamber 201 are supplied to the wafer 200 and flow in parallel on the wafer 200 , and then flow through the gap S from the upper part to the lower part through the first gas exhaust port 236 . The second gas exhaust port 237 and the exhaust port 230 exhaust from the exhaust pipe 231 .

關閉閥330a、330b，停止SiH4氣體及PH3氣體供給至處理室201之後，將處理室201排氣，排除殘留於處理室201的SiH4氣體、PH3氣體或反應生成物等。此時，若從氣體供給管310a，310b，310c，310d分別供給N2 等的惰性氣體至處理室201及間隙S而淨化，則可更提高排除來自處理室201及間隙S的殘留氣體的效果。After closing the valves 330a and 330b to stop the supply of SiH4 gas and PH3 gas to the processing chamber 201, the processing chamber 201 is exhausted to remove SiH4 gas, PH3 gas or reaction products remaining in the processing chamber 201. At this time, if inert gas such as N2 is supplied from the gas supply pipes 310a, 310b, 310c, and 310d to the processing chamber 201 and the gap S for purification, the effect of removing the residual gas from the processing chamber 201 and the gap S can be further enhanced. .

一旦晶圓200的處理完了，則藉由上述的動作的相反的程序，晶舟217從反應管203內搬出(晶舟卸載)。Once the processing of the wafer 200 is completed, the wafer boat 217 is unloaded from the reaction tube 203 by the reverse procedure of the above-mentioned operation (the wafer boat is unloaded).

在此，以下記載形成Si膜時的製程條件。 Si源極：SiH4 (甲矽烷) 成膜溫度：520℃ 壓力：0.68Torr 氣體流量：2.8SLM(甲矽烷) 成膜時間：約15minHere, the process conditions for forming the Si film are described below. Si source: SiH 4 (silyl) Film formation temperature: 520°C Pressure: 0.68Torr Gas flow rate: 2.8SLM (silyl) Film formation time: about 15min

在上述的實施形態中，說明有關同時供給第1處理氣體及第2處理氣體的情況，但本案是在交替供給第1處理氣體及第2處理氣體的情況也可適用。In the above-mentioned embodiment, the case where the first processing gas and the second processing gas are simultaneously supplied has been described, but the present case is also applicable to the case where the first processing gas and the second processing gas are alternately supplied.

其次，利用圖5乃至圖9來詳細說明有關實行本實施形態的製程作業(主處方)的處理流程，特別是在前處理步驟的前頭步驟可實行維修處理的處理流程。5 to 9, the processing flow for executing the manufacturing operation (main recipe) of the present embodiment, in particular, the processing flow in which maintenance processing can be performed in the first step of the preprocessing step will be described in detail.

如圖5所示般，製程作業是包含前處理(準備(standby)步驟)、正式處理(成膜步驟)及後處理(結束(end)步驟)的主處方，在本實施形態中，被構成可在前處理步驟的第一步驟(前頭步驟)實行警報處理(維修處理)。在此，前處理步驟是備妥處理準備的工程，至少包含備妥處理爐202內的處理環境(處理氣氛)的工程、將晶圓200裝填於晶舟217(晶圓裝填)的工程、備妥處理爐202的下側的晶舟217與晶圓200所待機的移載環境(移載氣氛)的工程之步驟。As shown in FIG. 5 , the process operation is a main recipe including pre-processing (standby step), main processing (film forming step), and post-processing (end step), and in this embodiment, it is constituted by Alarm processing (maintenance processing) can be performed in the first step (previous step) of the preprocessing step. Here, the preprocessing step is the process of preparing the processing preparations, and includes at least the process of preparing the processing environment (processing atmosphere) in the processing furnace 202, the process of loading the wafer 200 on the wafer boat 217 (wafer loading), and the preparation process. Steps of the process of securing the transfer environment (transfer atmosphere) in which the wafer boat 217 on the lower side of the processing furnace 202 and the wafer 200 stand by.

具體而言，被構成為在前處理步驟的第一步驟實行副處方，在此副處方的第一步驟實行維修處理。在此，維修處理是表示維修構成處理基板的處理爐202內的構件的保養處方。另外，有關此維修處理是後述。Specifically, the sub-prescription is executed in the first step of the pre-processing steps, and the maintenance process is executed in the first step of the sub-prescription. Here, the maintenance process refers to a maintenance prescription for repairing the components in the processing furnace 202 which process the substrate. Note that this maintenance process will be described later.

如圖6所示般，按每個零件(parts)設定維修項目。另外，此維修項目是例如亦可顯示於顯示部127，在畫面上任意地設定。As shown in FIG. 6 , maintenance items are set for each part. In addition, this maintenance item may be displayed on the display part 127, for example, and may be set arbitrarily on the screen.

在圖6中，設為「FOUP」的晶圓傳送盒110、設為「WAFER」的晶圓200、設為「BOAT」的晶舟217、設為「TUBE」的反應管203、設為「EQUIPMENT」的基板處理裝置10會分別作為零件設定。In FIG. 6, the wafer transfer cassette 110 set as "FOUP", the wafer 200 set as "WAFER", the wafer boat 217 set as "BOAT", the reaction tube 203 set as "TUBE", and the " The substrate processing apparatus 10 of "EQUIPMENT" is set as a component, respectively.

在圖6中，「使用次數」「使用時間」「裝置內停留時間」「累積膜厚」「可使用剩餘片數」「待機時間」「維修處理實行次數」「虛擬晶圓的使用次數」「虛擬晶圓累積膜厚」會分別作為維修項目設定。該等零件或維修項目是例如被構成為零件追加、維修項目削除等可任意地設定。另外，在圖6中，「-」是表示設定無效，「○」是表示設定有效。此有效「○」、無效「-」的設定也被構成為可適當編集。In FIG. 6, "use times", "use time", "residence time in the device", "accumulated film thickness", "usable remaining wafers", "standby time", "maintenance processing execution times", "virtual wafer use times", " "Virtual Wafer Cumulative Film Thickness" will be set as maintenance items respectively. These parts and maintenance items are configured such that parts addition, maintenance item deletion, etc. can be arbitrarily set. In addition, in FIG. 6, "-" indicates that the setting is invalid, and "○" indicates that the setting is valid. The setting of valid "○" and invalid "-" is also constituted so that it can be edited appropriately.

例如，作為對象的零件「EQUIPMENT」的維修項目為「待機時間」時，在此，「待機時間」是基板處理裝置10成為待機(IDLE)的時間，例如，連續處理時，「待機時間」是0min，其次無著手的批量時，在處理後成為待機(IDLE)。此基板處理裝置10的待機時間，例如到達1小時，實行爐內循環淨化。此情況，用以實行維修處理的臨界值是被預先設定為1小時。For example, when the maintenance item of the target component "EQUIPMENT" is "standby time", the "standby time" is the time when the substrate processing apparatus 10 is in standby (IDLE). For example, in the case of continuous processing, the "standby time" is 0min, and next, when there is no batch to be started, it will be in standby (IDLE) after processing. The standby time of the substrate processing apparatus 10 reaches 1 hour, for example, and the circulation cleaning in the furnace is performed. In this case, the threshold value for carrying out the maintenance process is preset to 1 hour.

例如，作為對象的零件「TUBE」的維修項目為「使用次數」時，在此，「使用次數」是意思處理爐202內的製程處理次數，例如，若實行處方內的特定步驟，則計數1次。一旦此實行次數到達被預定的臨界值，則實行維修處理。例如，實行爐內循環淨化或洗滌處方，作為在維修處理時被實行的保養處方。For example, when the maintenance item of the target component "TUBE" is "the number of times of use", the "time of use" here means the number of times of process processing in the processing furnace 202. For example, if a specific step in the recipe is executed, it is counted as 1 Second-rate. Once the number of executions reaches a predetermined critical value, maintenance processing is executed. For example, a furnace circulation cleaning or washing prescription is implemented as a maintenance prescription implemented at the time of maintenance processing.

例如，作為對象的零件「BOAT」的維修項目為「累積膜厚」時，在此，所謂晶舟217的累積膜厚，是在晶舟217被***至處理爐202內的狀態下，例如，處方內的特定步驟被實行時，表示預先被登錄於該步驟的膜厚值的累積。一旦此累積膜厚到達被預定的臨界值，則實行維修處理。例如，實行洗滌處方，作為在維修處理時被實行的保養處方。For example, when the maintenance item of the target component "BOAT" is "accumulated film thickness", here, the cumulative film thickness of the wafer boat 217 refers to the state in which the wafer boat 217 is inserted into the processing furnace 202. For example, When a specific step in the recipe is executed, it shows the accumulation of the film thickness values registered in advance in that step. Once the accumulated film thickness reaches a predetermined critical value, maintenance processing is carried out. For example, a washing prescription is executed as a maintenance prescription executed at the time of maintenance processing.

而且，對於在圖6中被設定為「○」的維修項目的維修處理是被定義於圖7。作為維修處理，有「無指定」「警報報告」「作業實行禁止」「維修作業手動開始」「維修作業自動開始」「叫出警報處方」。實行維修處理的時機是可依維修項目或維修處理來適當決定。藉此，可分開使用作為成膜處理結束後的後處理的維修處理、作為成膜處理開始前的前處理的維修處理，可有效率地實行維修處理。Furthermore, the maintenance process for the maintenance item set to "○" in FIG. 6 is defined in FIG. 7 . As maintenance processing, there are "no designation", "alarm report", "work execution prohibition", "manual start of maintenance work", "automatic start of maintenance work", and "call for alarm prescription". The timing of the maintenance process can be appropriately determined according to the maintenance item or maintenance process. Thereby, the maintenance process as the post-processing after the film formation process is completed and the maintenance process as the pre-processing before the start of the film formation process can be used separately, and the maintenance process can be performed efficiently.

若選擇圖7所示的「無指定」，則維修處理是不進行。在被通知警報的狀態下，將維修處理變更成「無指定」時，警報是復原。例如，輕微的警報發生時，選擇「無指定」強制性地使警報復原而使繼續進行處理。If "No designation" shown in FIG. 7 is selected, the maintenance process is not performed. When the maintenance process is changed to "No Designation" while being notified of the alarm, the alarm is reset. For example, when a minor alarm occurs, select "No Designation" to forcibly reset the alarm and continue processing.

其次，被構成為若選擇「警報報告」，則通知警報。在此維修處理中，藉由將對象零件的維修項目的現在值設定成臨界值以下，可復原警報。雖通知為必要，但以不是停止處理程度的輕微的錯誤來設定。Next, when "Alarm report" is selected, an alarm is notified. In this maintenance process, the alarm can be reset by setting the current value of the maintenance item of the target part below the threshold value. Although notification is necessary, it is set as a slight error that is not enough to stop processing.

被構成為若選擇「作業實行禁止」，則在結束實行現在實行中的作業的時機，一時停止其次的作業實行。此維修處理是藉由將對象零件的維修項目的現在值設定成臨界值以下，可復原警報，可實行其次的作業。It is configured to temporarily stop the execution of the next job at the timing when the execution of the job currently being executed is terminated when "Prohibition of job execution" is selected. In this maintenance process, by setting the current value of the maintenance item of the target part below the threshold value, the alarm can be reset and the next operation can be performed.

被構成為若選擇「維修作業手動開始」，則自動產生維修作業，在其次實行的作業之前***。由於此維修作業是手動開始指定，因此成為等待開始，被構成為若有開始指示，則實行此維修作業。維修作業正常結束時，復原警報。另一方面，維修作業異常結束時，不復原警報。此情況，藉由將警報發生對象零件的維修項目的現在值設定成臨界值以下，可復原警報。又，「維修作業自動開始」是若無其他實行中的作業，則除了不等待作業開始，自動實行維修作業以外是與「維修作業手動開始」相同。It is configured so that when "manual start of maintenance work" is selected, maintenance work is automatically generated and inserted before the work to be executed next. Since this maintenance work is designated to be manually started, it becomes a waiting start, and is configured to execute this maintenance work when a start instruction is given. When the maintenance work ends normally, the alarm is reset. On the other hand, when the maintenance work ends abnormally, the alarm is not reset. In this case, the alarm can be reset by setting the current value of the maintenance item of the alarm occurrence target part below the threshold value. In addition, "maintenance work automatic start" is the same as "maintenance work manual start" except that the maintenance work is automatically executed without waiting for the start of work unless there is another work being executed.

被構成為若選擇「叫出警報處方」，則在作為前處理步驟的準備步驟被實行的副處方的第1步驟，被設定於監視對象的零件的維修項目的現在值到達臨界值時，實行指定的警報處方處理。然後，警報處方處理正常結束時，復原警報，警報處方處理異常結束時，警報是不復原。又，被構成為被設定於監視對象的零件的維修項目的現在值未到達臨界值時，什麼也不實行，自動實行其次的步驟。It is configured to be executed when the current value of the maintenance item set in the monitoring target component reaches the threshold value in the first step of the sub-recipe executed as the preparatory step of the preprocessing step when "call alarm prescription" is selected. The specified alarm prescription processing. Then, when the alarm prescription processing ends normally, the alarm is reset, and when the alarm prescription processing ends abnormally, the alarm is not reset. Also, when the current value of the maintenance item set in the component to be monitored does not reach the critical value, nothing is executed, and the next step is automatically executed.

被定義於圖7的維修處理的內容是與圖6所示的維修項目同樣地被構成維修內容的變更、削除、追加可適當任意地設定。又，圖7所示的維修處理也與圖6所示的維修項目同樣地顯示於顯示部127，亦可在畫面上任意地設定。而且，包含上述警報處方的維修處方(保養處方)的內容不被限定於晶舟裝載工程、維修工程、晶舟卸載工程。例如，旋轉機構267的旋轉軸265附近的粒子除去用的保養處方是被構成為在正式處理(晶舟裝載工程、N2 淨化工程、晶舟卸載工程)中包含冷卻工程。此保養處方的詳細後述。The content of the maintenance process defined in FIG. 7 is constituted similarly to the maintenance items shown in FIG. 6 , and can be set appropriately and arbitrarily. Moreover, the maintenance process shown in FIG. 7 is also displayed on the display part 127 similarly to the maintenance item shown in FIG. 6, and can be set arbitrarily on the screen. Furthermore, the contents of the maintenance prescription (maintenance prescription) including the above-mentioned alarm prescription are not limited to the boat loading process, the maintenance process, and the wafer boat unloading process. For example, the maintenance prescription for particle removal in the vicinity of the rotating shaft 265 of the rotating mechanism 267 is constituted so that the cooling process is included in the main process (boat loading process, N 2 purification process, and boat unloading process). Details of this maintenance prescription will be described later.

圖8是詳細地表示在圖5的前處理所實行的副處方的第一步驟的順序。如圖8所示般，從作業實行單元TM發送第一處方實行指示至處方實行單元PMC。處方實行單元PMC是對控制部121要求處方本體(製程處方本體)，控制部121將處方本體(製程處方本體)的資料發送至處方實行單元PMC。FIG. 8 shows in detail the sequence of the first step of the sub-prescription executed in the preprocessing of FIG. 5 . As shown in FIG. 8 , the first prescription execution instruction is sent from the job execution unit TM to the prescription execution unit PMC. The recipe execution unit PMC requests the recipe body (process recipe body) to the control unit 121, and the control unit 121 sends the data of the recipe body (process recipe body) to the prescription execution unit PMC.

其次，在本實施形態中，處方實行單元PMC是對控制部121要求維修項目的狀態，控制部121將維修項目的狀態的資料(例如現在值)發送至處方實行單元PMC，一旦處方實行單元PMC受理維修項目的狀態的資料，則將處方取得完了通知給作業實行單元TM，受理此通知的作業實行單元TM將第二處方實行指示發送至處方實行單元PMC。在此，維修項目狀態資料的內容是儲存有每個維修項目的維修處理方法。圖7所示的「叫出警報處方」的情況，本實施形態是儲存有維修處理有無必要資訊。在此，未選擇「叫出警報處方」作為維修處理時，亦構成為不實行副處方。又，亦可被構成為在此維修處理有無必要資訊中包含維修項目的現在值是否到達臨界值的資訊，若未達到臨界值，則不實行副處方。Next, in the present embodiment, the prescription execution unit PMC is in the state of requesting the maintenance item to the control unit 121, and the control unit 121 transmits data (for example, current value) of the state of the maintenance item to the prescription execution unit PMC, and once the prescription execution unit PMC After receiving the data on the status of the maintenance item, it notifies the work execution unit TM that the prescription has been acquired, and the work execution unit TM that received the notification transmits the second prescription execution instruction to the prescription execution unit PMC. Here, the content of the maintenance item status data is that the maintenance processing method for each maintenance item is stored. In the case of "calling an alarm prescription" shown in FIG. 7, the present embodiment stores information on whether or not maintenance processing is necessary. Here, if "calling alarm prescription" is not selected as the maintenance process, the sub prescription is not executed. In addition, the information on whether the current value of the maintenance item has reached the critical value may be included in the maintenance processing necessity information, and if the critical value is not reached, the sub-prescription is not executed.

其次，實行判定圖9所示的警報處理的實行之工程。處方實行單元是被構成為作為警報處方的保養處方的實行的設定確認、及預先被設定的維修項目的現在值與臨界值的比較，確認是否到達臨界值。處方實行單元是當此現在值到達臨界值時，實行保養處方，當此現在值未到達臨界值時，不特別實行保養處方，結束本工程。Next, the process of judging the execution of the alarm processing shown in FIG. 9 is carried out. The prescription execution means is configured to confirm the setting of execution of the maintenance prescription as an alarm prescription, and to compare the current value of the maintenance item set in advance with the threshold value, and to confirm whether the threshold value is reached. The prescription execution unit executes the maintenance prescription when the current value reaches the critical value, and ends the project without executing the maintenance prescription when the current value does not reach the critical value.

如圖8所示般，當預先被設定的維修項目的現在值到達臨界值時，處方實行單元是在警報處方實行開始時，將處理開始的通知發送至控制部121，在警報處方實行結束時，將處理結束的通知發送至控制部121。當預先被設定的維修項目的現在值未到達臨界值時，處方實行單元是無須特別實行保養處方的判定，因此被構成為移往其次步驟，處方繼續。As shown in FIG. 8 , when the current value of the maintenance item set in advance reaches the threshold value, the prescription execution unit sends a notification of the start of processing to the control unit 121 when the execution of the alarm prescription is started, and when the execution of the alarm prescription is completed , and sends a notification of the completion of the process to the control unit 121 . When the current value of the maintenance item set in advance does not reach the critical value, the prescription execution means determines that it is not necessary to execute the maintenance prescription in particular, so it is configured to move to the next step and continue the prescription.

處方實行部是被構成為當警報處方不正常結束時，實行預定的錯誤處理。預定的錯誤處理是例如被構成為強制性地移動(轉移(jump))至後處理，進行後處理。此情況，處方實行部是圖5所示的副處方(冷卻處理或晶圓回收)省略(跳越(skip))，形成一時停止狀態。或，處方實行部是實行中止處方而進行中止處理。此情況也同樣地成為一次停止狀態。哪個的情況皆進行對於發生的障礙(錯誤)的處理，然後復舊至生產處理。The prescription execution unit is configured to execute predetermined error processing when the alarm prescription is abnormally terminated. The predetermined error processing is, for example, configured to forcibly move (jump) to the post-processing and perform the post-processing. In this case, the sub-recipe (cooling process or wafer recovery) shown in FIG. 5 is omitted (skip) in the recipe execution unit, and a temporary stop state is established. Alternatively, the prescription execution unit executes the cancellation process by executing the cancellation prescription. In this case as well, it becomes a one-time stop state. In either case, the obstacle (error) that has occurred is processed, and then restored to the production process.

若警報處方正常結束，則被構成為實行副處方的第一步驟的其次的步驟。如圖5所示般，副處方是更具有搬送基板的移載步驟，被構成為實行將晶圓200移載至晶舟217的移載步驟。另外，若移載步驟異常結束，則如前述般成為一時停止狀態。然後，一旦此移載步驟結束，則從副處方開始主處方的第2步驟。然後，開始正式處理(成膜步驟)。在此，正式處理是上述所以省略。When the alarm prescription ends normally, it is configured to execute the second step of the first step of the sub-prescription. As shown in FIG. 5 , the sub-recipe further includes a transfer step for transferring a substrate, and is configured to execute a transfer step for transferring the wafer 200 to the wafer boat 217 . In addition, when the transfer step ends abnormally, it will be in a temporary stop state as described above. Then, when this transfer step is completed, the second step of the main recipe starts from the sub-recipe. Then, the main process (film forming step) is started. Here, the formal processing is described above, so it is omitted.

又，控制部121是被構成為若警報處方正常結束，則將預先被設定的維修項目的現在值清零。藉此，控制部121是被構成為解除依據被設定於監視對象的零件的維修項目所發生的警報。藉此，當作業預先被預約為2次連續實行時，即使第1次的作業在結束時到達臨界值，只要在第2次的作業的前處理的第一步驟實行警報處方而正常地結束，便可在處理爐202內的氣氛備妥的狀態下實行第2次的作業。Moreover, the control part 121 is comprised so that it may clear the current value of the maintenance item set in advance to zero when an alarm prescription is normally completed. Thereby, the control part 121 is comprised so that the alarm which will generate|occur|produce based on the maintenance item set to the component to be monitored is cancelled|released. In this way, when the job is reserved for two consecutive executions in advance, even if the first job reaches the critical value at the end of the job, as long as the alarm prescription is executed in the first step of the preprocessing of the second job, it ends normally. The second operation can be performed in a state where the atmosphere in the processing furnace 202 is ready.

其次，後處理(結束步驟)是成膜後的後處理，至少包含為了其次的成膜而備妥爐內環境的工程、將處理完了的晶舟217或晶圓200冷卻(cooling)的工程、從晶舟217回收處理完了的晶圓200(晶圓脫裝)的工程之步驟。Next, post-processing (finishing step) is post-processing after film formation, and includes at least the process of preparing the furnace environment for the next film formation, the process of cooling the processed wafer boat 217 or wafer 200, Steps of the process of recovering the processed wafers 200 from the wafer boat 217 (wafer unloading).

具體而言，如圖5所示般，控制部121是在後處理的第一步驟實行副處方，在後處理被實行的副處方是被構成為具有：至少冷卻處理完了的晶圓200或晶舟217的冷卻步驟、及從晶舟217回收處理完了的晶圓200的移載步驟。然後，一旦副處方結束，則移至後處理步驟，進行為了其次的成膜處理而備妥處理爐202內的處理環境的處理。Specifically, as shown in FIG. 5 , the control unit 121 executes the sub-recipe in the first step of the post-processing, and the sub-recipe executed in the post-processing is configured to include at least the cooling of the processed wafer 200 or the wafer. The cooling step of the boat 217 and the transfer step of recovering the processed wafers 200 from the wafer boat 217 . Then, once the sub-recipe is completed, the process moves to the post-processing step, and a process of preparing the processing environment in the processing furnace 202 for the next film-forming process is performed.

(實施例1) 其次，說明有關基板處理裝置10的動作。本實施形態是一旦形成被預約的製程作業的實行處理開始時間，則控制部121控制構成基板處理裝置10的各部的動作，開始製程作業。(Example 1) Next, the operation of the substrate processing apparatus 10 will be described. In the present embodiment, when the execution processing start time of the reserved process operation is established, the control unit 121 controls the operation of each part constituting the substrate processing apparatus 10 to start the process operation.

在前處理的第一步驟(前頭步驟)(在晶圓200的搬送處理前)，判定是否實行維修處理的工程會藉由控制部121來實行。具體而言，處方實行部PMC會判定是否需要實行維修處理。例如，由處方實行部PMC所實行的臨界值與預先被設定的維修項目的現在值會被比較。在本實施形態中，比較預先被設定的維修項目的現在值是否到達實行警報處方的臨界值。另外，此比較是亦可被構成為進行有關在圖6中被設定成「○」的維修項目之中，維修處理項目被設定成圖7所示的「叫出警報處方」的維修項目。In the first step (preliminary step) of the preprocessing (before the transfer processing of the wafer 200 ), the control unit 121 performs the process of determining whether or not to perform the maintenance processing. Specifically, the prescription execution unit PMC determines whether or not maintenance processing is required. For example, the threshold value executed by the prescription execution unit PMC is compared with the current value of the maintenance item set in advance. In the present embodiment, it is compared whether or not the current value of the maintenance item set in advance has reached the threshold value for executing the warning prescription. In addition, this comparison may be configured such that among the maintenance items set to "○" in FIG. 6 , the maintenance processing item is set to the maintenance item of "call alarm prescription" shown in FIG. 7 .

當現在值未到達實行警報處方時，被判定成不要維修處理，處方實行部PMC是移往其次的步驟繼續副處方。此情況，處方實行部PMC是將副處方的第一步驟的結束通知給作為作業實行單元的搬送系控制器。當現在值到達實行警報處方時，被判定成要維修處理，處方實行部PMC是在副處方的第一步驟實行維修處理(叫出警報處方)。處方實行部PMC是此時將警報處理開始通知及結束通知發送至控制部121。When the current value does not reach the execution alarm prescription, it is determined that the maintenance process is not required, and the prescription execution unit PMC moves to the next step and continues the sub-prescription. In this case, the recipe execution unit PMC notifies the conveyance system controller, which is the work execution unit, of the completion of the first step of the sub-recipe. When the current value reaches the execution of the alarm prescription, it is determined that the maintenance process is required, and the prescription execution unit PMC executes the maintenance process (calls the alarm prescription) in the first step of the sub-prescription. The prescription execution unit PMC transmits the alarm processing start notification and end notification to the control unit 121 at this time.

若警報處方正常結束，則如上述般處方實行部PMC是移往其次的步驟使副處方繼續。控制部121是構成為使預先被設定的維修項目的現在值回到零，解除發生的警報。When the alarm prescription ends normally, the prescription execution unit PMC moves to the next step as described above to continue the sub-prescription. The control part 121 is comprised so that the present value of the maintenance item set in advance may return to zero, and the alarm which generate|occur|produces is cancelled|released.

若警報處方異常結束，則處方實行部PMC是使預定的錯誤處理實行，使裝置形成一時停止狀態。另一方面，控制部121是被構成為維持預先被設定的維修項目的現在值，使保持警報。When the alarm prescription ends abnormally, the prescription execution unit PMC executes a predetermined error process to bring the device into a temporary stop state. On the other hand, the control unit 121 is configured to maintain the current value of the maintenance item set in advance, and to hold the alarm.

受理第一步驟的結束通知的搬送系控制器是被構成為實行將晶圓200移載至晶舟217的移載步驟。亦即，作為前處理的移載步驟，晶圓200的搬送處理會藉由搬送系控制器來進行。一旦晶圓傳送盒110被供給至裝載埠22，則裝載埠22上的晶圓傳送盒110是藉由晶圓傳送盒搬入裝置來從晶圓傳送盒搬入搬出口搬入至框體111的內部。被搬入的晶圓傳送盒110是藉由晶圓傳送盒搬送裝置130來自動地搬送至晶圓傳送盒架105的指定的載置部140而交接，暫時性地被保管後，從晶圓傳送盒架105搬送至一方的晶圓傳送盒開啟器21而交接移載至載置台122，或直接被搬送至晶圓傳送盒開啟器21而移載至載置台122。The transfer system controller that receives the notification of the end of the first step is configured to execute the transfer step of transferring the wafer 200 to the wafer boat 217 . That is, as the transfer step of the preprocessing, the transfer process of the wafer 200 is performed by the transfer system controller. Once the wafer transfer cassette 110 is supplied to the loading port 22, the wafer transfer cassette 110 on the loading port 22 is carried into the frame body 111 from the wafer transfer box loading and unloading port by the wafer transfer box loading device. The loaded pod 110 is automatically transferred to the designated placement portion 140 of the pod holder 105 by the pod transfer device 130 and delivered, temporarily stored, and then transferred from the wafer. The cassette rack 105 is conveyed to one pod opener 21 and transferred to the mounting table 122 , or directly conveyed to the pod opener 21 and then transferred to the mounting table 122 .

被載置於載置台122的晶圓傳送盒110是其開口側端面會被推壓至副框體119的正面壁119a的晶圓搬入搬出口120的開口緣邊部，且其蓋會藉由蓋裝卸機構123而卸下，將晶圓出入口開放。一旦晶圓傳送盒110藉由晶圓傳送盒開啟器21而開放，則晶圓200會藉由晶圓移載裝置125a的鑷子125c來從晶圓傳送盒110經由晶圓出入口而拾取，經由閘閥90來搬入至位於移載室8的後方的搬送室6，被裝填(charging)至晶舟217。此時，亦可以未圖示的缺口(notch)對準裝置來整合晶圓之後，進行裝填。將晶圓200交接至晶舟217的晶圓移載裝置125a是回到晶圓傳送盒110，將其次的晶圓200裝填於晶舟217。The wafer transfer cassette 110 placed on the mounting table 122 has its opening side end surface pressed against the opening edge of the wafer loading and unloading port 120 of the front wall 119 a of the sub-frame body 119 , and its cover is moved by The cover attaching and detaching mechanism 123 is removed to open the wafer inlet and outlet. Once the FOUP 110 is opened by the FOUP opener 21 , the wafers 200 are picked up by the tweezers 125c of the wafer transfer device 125a from the FOUP 110 through the wafer inlet and outlet, and then passed through the gate valve 90 . It is transferred to the transfer chamber 6 located behind the transfer chamber 8 , and charged to the wafer boat 217 . At this time, the wafers may be aligned with a notch alignment device (not shown) and then loaded. The wafer transfer device 125 a that transfers the wafers 200 to the wafer boat 217 returns to the wafer transfer cassette 110 , and loads the next wafer 200 into the wafer boat 217 .

在此一方(上段或下段)的晶圓傳送盒開啟器21之藉由晶圓移載機構125的晶圓往晶舟217的裝填作業中，在另一方(下段或上段)的晶圓傳送盒開啟器21是別的晶圓傳送盒110會藉由晶圓傳送盒搬送裝置130來從晶圓傳送盒架105搬送而移載，藉由晶圓傳送盒開啟器21的晶圓傳送盒110的開放作業會同時進行。During the loading operation of the wafer transfer pod opener 21 on the one side (upper stage or the lower stage) to the wafer boat 217 by the wafer transfer mechanism 125, the wafer transfer pod on the other side (lower stage or upper stage) The opener 21 is another pod 110 that is transferred from the pod frame 105 by the pod transfer device 130 and transferred, and the pod 110 of the pod 110 is transferred by the pod opener 21 . Open work will be done concurrently.

一旦預先被指定的片數的晶圓200裝填於晶舟217，則實行製程處方(正式處理)。此製程處方是用以處理基板的處方，藉由控制器121來控制。一旦此製程處方開始，則藉由爐口擋門147來關閉的處理爐202的下端部會藉由爐口擋門147來開放。接著，保持晶圓200群的晶舟217是藉由密封蓋219會藉由晶舟昇降機115來上昇而往處理爐202內搬入(裝載)。Once a predetermined number of wafers 200 are loaded into the wafer boat 217, a process recipe (main process) is executed. The process recipe is a recipe for processing the substrate, and is controlled by the controller 121 . Once the process recipe starts, the lower end of the processing furnace 202 , which is closed by the furnace door 147 , is opened by the furnace door 147 . Next, the boat 217 holding the group of wafers 200 is lifted up by the boat lift 115 through the sealing cover 219 and is carried (loaded) into the processing furnace 202 .

裝載後，藉由製程系控制器，以處理爐202來對晶圓200實施任意的處理。處理後，以大概上述的相反的程序，晶圓200及晶圓傳送盒110往框體的外部搬出(卸載)。After loading, arbitrary processing is performed on the wafer 200 with the processing furnace 202 by the process system controller. After the processing, the wafer 200 and the wafer transfer cassette 110 are carried out (unloaded) to the outside of the housing by roughly the reverse procedure described above.

(比較例) 如圖10A所示般，在1個的作業實行複數次的成膜處理時(例如將N片的晶圓200分成N/2片與N/2片來進行成膜處理時)，且對於同處理室201(或處理爐202)進行連續成膜處理時，以往的維修處理是無圖7所示的「叫出警報處方」，因此即使設定有「維修作業自動開始」，也會因為實行1個的製程作業時，2次連續實行製程處方，所以即使裝置認知(控制部121判定)在第1次的製程處方實行中到達預定的維修臨界值需要維修，若不是第2次的製程處方被實行之後(若不是製程作業結束)，則根據維修作業的保養處方無法實行。因此，即使得知基板處理結果不良，也必須2次連續實行製程處方，有基板處理結果的可靠度的降低之憂。(Comparative example) As shown in FIG. 10A , when a plurality of film formation processes are performed in one operation (for example, when N wafers 200 are divided into N/2 wafers and N/2 wafers for film formation treatment), the same When the process chamber 201 (or the process furnace 202 ) performs continuous film formation, the conventional maintenance process does not have the “call alarm prescription” shown in FIG. In the case of a single process operation, the process recipe is continuously executed twice, so even if the device recognizes (determined by the control unit 121) that the maintenance threshold is reached in the first process recipe execution, maintenance is required, unless the second process recipe is executed. After execution (if the process operation is not completed), the maintenance prescription based on the maintenance operation cannot be executed. Therefore, even if the substrate processing result is found to be poor, the process prescription must be continuously executed twice, which may reduce the reliability of the substrate processing result.

(實施例2) 圖10B所示般，即使是在1個的作業實行複數次的成膜處理時(例如將N片的晶圓200分成N/2片與N/2片來進行成膜處理時)，且對於同處理室201(或處理爐202)進行連續成膜處理時，本實施形態是亦可藉由設定圖7所示的「叫出警報處方」來使維修處理實行於第2次的製程處方的前處理的前頭步驟。(Example 2) As shown in FIG. 10B , even when a plurality of film formation processes are performed in one operation (for example, when N wafers 200 are divided into N/2 wafers and N/2 wafers for film formation treatment), the When continuous film formation is performed in the same processing chamber 201 (or processing furnace 202 ), in this embodiment, the maintenance process can be performed in the second process recipe by setting the "call alarm recipe" shown in FIG. 7 . The first step of preprocessing.

(實施例3) 在晶圓200形成Si膜時，若進行預定次數分批處理，則會有在旋轉機構267的旋轉軸265附近產生粒子的情形。在本實施形態中，維修處理是設定有圖7所示的叫出警報處方，圖6所示的維修項目是設定有晶圓200(WAFER)及反應管203(TUBE)的使用次數。具體而言，被構成為當晶圓200(WAFER)及反應管203(TUBE)之中至少一方的使用次數到達臨界值時，作為以此粒子低減為目的之維修處理(警報處方)的粒子低減處方(圖11的N2 淨化處方)會被實行。(Example 3) When the Si film is formed on the wafer 200 , if batch processing is performed a predetermined number of times, particles may be generated in the vicinity of the rotation axis 265 of the rotation mechanism 267 . In the present embodiment, the maintenance process is to set the alarm recipe shown in FIG. 7 , and the maintenance item shown in FIG. 6 is to set the usage frequency of the wafer 200 (WAFER) and the reaction tube 203 (TUBE). Specifically, when the number of times of use of at least one of the wafer 200 (WAFER) and the reaction tube 203 (TUBE) reaches a critical value, the particle reduction is configured as a maintenance process (warning prescription) for this particle reduction. The recipe (the N2 purge recipe of Figure 11) will be executed.

圖11所示的N2 淨化處方是成為在正式處理(晶舟裝載工程、N2 淨化工程、晶舟卸載工程)中包含冷卻工程的構成。又，圖11是成為將圖5所示的保養處方(維修處理)具體化的一實施例，有關主處方等的其他的處方是與圖5完全相同。The N 2 purification recipe shown in FIG. 11 is a configuration in which the cooling process is included in the main process (the boat loading process, the N 2 purification process, and the boat unloading process). 11 is an embodiment in which the maintenance prescription (maintenance process) shown in FIG. 5 is embodied, and other prescriptions such as the main prescription are completely the same as those shown in FIG. 5 .

因此，在圖11中，與圖5相同的部分是省略說明，在本實施例中，記載有關圖11所示的N2 淨化處方，作為維修處理(警報處方)。Therefore, in FIG. 11 , descriptions of the same parts as those in FIG. 5 are omitted, and in this embodiment, the N 2 purge prescription shown in FIG. 11 is described as maintenance processing (warning prescription).

晶舟裝載工程是將晶舟217***至處理爐202內的動作與前述的晶舟裝載工程不變，但在N2 淨化處方的晶舟裝載工程中，未裝填晶圓200的(空的)晶舟217會被***至處理爐202內。另外，在此工程中，亦可不搭載晶舟217，相反的，亦可為將在晶舟217不是製品的爐內調整用的晶圓200裝填於晶舟的狀態。此晶舟217的有無及往晶舟217的晶圓200的裝填的有無是被構成可任意地設定。In the boat loading process, the operation of inserting the wafer boat 217 into the processing furnace 202 is the same as the above-mentioned boat loading process, but in the wafer boat loading process of the N 2 purification recipe, the wafers 200 are not loaded (empty). The wafer boat 217 is inserted into the processing furnace 202 . In addition, in this process, the wafer boat 217 may not be mounted, and conversely, the wafer 200 for adjustment in the furnace in which the wafer boat 217 is not a product may be loaded in the wafer boat. The presence or absence of the wafer boat 217 and the presence or absence of loading of the wafers 200 into the wafer boat 217 are configured and can be arbitrarily set.

其次，為調整處理爐202內(處理室201)的壓力的工程。此時，當然不只是壓力，處理爐202內(處理室201)的溫度也被調整成預定溫度。本實施例是其次接著在N2 淨化工程或大氣壓恢復工程也被構成為處理爐202內(處理室201)會被維持於預定溫度、預定壓力。Next, it is the process of adjusting the pressure in the processing furnace 202 (processing chamber 201). At this time, not only the pressure but also the temperature in the processing furnace 202 (processing chamber 201 ) is adjusted to a predetermined temperature. In this embodiment, the N 2 purification process or the atmospheric pressure recovery process is also configured so that the inside of the processing furnace 202 (processing chamber 201 ) is maintained at a predetermined temperature and a predetermined pressure.

然後，在處理爐202內(處理室201)的溫度或壓力被維持於預定值的狀態下，被移至N2 淨化氣體工程。在此，淨化氣體會被供給至處理爐202內(處理室201)。具體而言，惰性氣體會從惰性氣體供給系供給至處理爐202內(處理室201)。第1處理氣體供給系、第2處理氣體供給系、第3處理氣體供給系的閥330a，330b，330c會被關閉。此時，亦可分別開啟第2處理氣體供給系、第3處理氣體供給系的閥330e，330f，將惰性氣體供給至處理爐202內(處理室201)。另外，在N2 淨化工程中，供給至旋轉機構267的旋轉軸265附近的淨化氣體的流量會被設定多。Then, in a state where the temperature or pressure in the processing furnace 202 (processing chamber 201 ) is maintained at a predetermined value, it is transferred to the N 2 purge gas process. Here, the purge gas is supplied into the processing furnace 202 (processing chamber 201). Specifically, the inert gas is supplied into the processing furnace 202 (processing chamber 201 ) from the inert gas supply system. The valves 330a, 330b, and 330c of the first process gas supply system, the second process gas supply system, and the third process gas supply system are closed. At this time, the valves 330e and 330f of the second processing gas supply system and the third processing gas supply system may be opened, respectively, and the inert gas may be supplied into the processing furnace 202 (processing chamber 201). In addition, in the N 2 purification process, the flow rate of the purge gas supplied to the vicinity of the rotating shaft 265 of the rotating mechanism 267 is set to be large.

在此，將N2 淨化處方的淨化條件之一例記載於以下。 淨化氣體：N2 氣體 溫度：400℃ 壓力：0.006TorrHere, an example of the purification conditions of the N 2 purification recipe is described below. Purging gas: N2 gas temperature: 400℃ Pressure: 0.006Torr

然後，若在處理爐202內(處理室201)的溫度或壓力被維持於預定值的狀態下，一定時間供給惰性氣體，則移至大氣壓恢復工程。在此，至處理爐202內(處理室201)的壓力形成大氣壓為止，淨化氣體會被供給至處理爐202內(處理室201)。又，同樣地處理爐202內(處理室201)的溫度也被降低。Then, when the inert gas is supplied for a certain period of time while the temperature or pressure in the processing furnace 202 (processing chamber 201 ) is maintained at a predetermined value, the process moves to the atmospheric pressure recovery process. Here, until the pressure in the processing furnace 202 (processing chamber 201 ) becomes atmospheric pressure, the purge gas is supplied into the processing furnace 202 (processing chamber 201 ). Moreover, the temperature in the processing furnace 202 (processing chamber 201) is also lowered similarly.

一旦被降低至某程度的溫度(例如待機溫度)，則移至晶舟卸載工程。在此，晶舟217會從處理爐202內(處理室201)取出。Once it is lowered to a certain temperature (eg, standby temperature), it moves to the boat unloading process. Here, the wafer boat 217 is taken out from the processing furnace 202 (processing chamber 201 ).

晶舟卸載後，具有至少冷卻晶舟217的工程。這是因為有依N2 淨化時的溫度，晶舟217的溫度維持高溫，從處理爐202內(處理室201)取出的情況。在本實施例中，因為N2 淨化時的溫度比較高，所以設有冷卻工程。具體而言，N2 淨化條件之一的溫度為400℃高，若不設冷卻工程，一旦移至移載步驟，則有在移載晶圓200中發生障礙的可能性。此冷卻工程是預先設有設定時間，但若在搬送室6設置溫度感測器，由溫度感測器所檢測的溫度比預定的溫度低，則亦可結束冷卻工程。又，作為一例，N2 淨化處方的總計時間是15分鐘程度。After the boat is unloaded, at least the boat 217 has to be cooled. This is because the temperature of the wafer boat 217 is maintained at a high temperature according to the temperature at the time of N 2 purification, and the wafer may be taken out from the processing furnace 202 (processing chamber 201 ). In this embodiment, since the temperature during N 2 purification is relatively high, a cooling process is provided. Specifically, the temperature of one of the N 2 purification conditions is as high as 400° C., and if the cooling process is not performed, there is a possibility that the transfer of the wafer 200 may be disturbed once it is transferred to the transfer step. This cooling process has a preset time, but if a temperature sensor is provided in the transfer chamber 6 and the temperature detected by the temperature sensor is lower than a predetermined temperature, the cooling process may be terminated. In addition, as an example, the total time of the N 2 purification prescription is about 15 minutes.

而且，被構成為N2 淨化處方結束的同時移至副處方的判定工程的其次的步驟。然後，被構成為移往晶圓200的移載步驟。之後接著的工程是與圖5同動作，所以在此是省略說明。Then, it is configured to move to the next step of the determination process of the sub-recipe when the N 2 purification recipe is completed. Then, it is constituted as a transfer step of transferring to the wafer 200 . Since the subsequent processes operate in the same manner as in FIG. 5 , the description is omitted here.

在本實施例中，為了減低對基板處理結果影響大的粒子，而設為在晶圓200及反應管203之中哪一方的使用次數到達臨界值時實行警報處方之類的設定。但，不被限定於如此的設定，圖6所示的維修項目及圖7所示的維修處理可按照維修目的來適當決定。又，本實施例的保養處方是以正式處理(晶舟裝載工程、處理工程、晶舟卸載工程)與分別冷卻晶圓200及晶舟217的冷卻處理的組合所構成。如此，被編入至前處理的保養處方是不被限定於正式處理(晶舟裝載工程、處理工程、晶舟卸載工程)的構成，被構成為按照維修內容來適當設定。In this embodiment, in order to reduce the particles that have a great influence on the substrate processing result, it is set to execute an alarm prescription when the usage frequency of either the wafer 200 or the reaction tube 203 reaches a critical value. However, it is not limited to such a setting, and the maintenance items shown in FIG. 6 and the maintenance process shown in FIG. 7 can be appropriately determined according to the maintenance purpose. In addition, the maintenance recipe of this embodiment is constituted by a combination of the main process (the boat loading process, the processing process, and the boat unloading process) and the cooling process for cooling the wafer 200 and the wafer boat 217 , respectively. In this way, the maintenance recipe incorporated in the pre-processing is not limited to the main processing (the boat loading process, the processing process, and the wafer unloading process), and is configured to be appropriately set according to the maintenance content.

藉由如此實行N2 淨化處方，可除去旋轉軸265附近的粒子。例如，可用大流量的惰性氣體吹走滯留於密封罩的死角的粒子。By carrying out the N 2 purification recipe in this way, particles in the vicinity of the rotating shaft 265 can be removed. For example, a large flow of inert gas can be used to blow away the particles remaining in the dead space of the sealing cover.

若根據本實施形態，則具有以下(1)乃至(6)所示的一個以上的效果。According to the present embodiment, one or more effects shown in the following (1) to (6) are obtained.

(1)現在的製程作業實行後，即使實行保養處方，若至其次的製程作業被實行為止的期間的時間(以下稱為待機時間)變長，則以往是第1批的基板處理結果會變差(第2批以後是基板處理結果安定)，但若根據本實施形態，則藉由在製程作業的前處理的前頭步驟使保養處方實行，可從第1批開始使基板處理結果安定化。(1) After the current process operation is executed, even if the maintenance prescription is executed, if the time until the next process operation is executed (hereinafter referred to as the waiting time) becomes longer, the substrate processing results of the first batch in the past will change. Poor (substrate processing results are stable after the second batch), but according to this embodiment, the substrate processing results can be stabilized from the first batch by executing the maintenance recipe in the first step of the pretreatment of the process operation.

(2)在本實施形態中，由於藉由在製程作業的前處理的前頭步驟使保養處方實行，不會對被實行於正式處理的製程處方造成影響，因此可極為縮小對基板處理結果的影響。即使是特別連續進行分批處理時，也經常保養處方實行時，至製程處方實行的時間成為一定，因此可使基板處理結果安定。另一方面，結束維修處方之後，實行其次的製程作業的以往技術是在維修處方結束後在是否有製程作業的實行指示不明的階段實行維修處方，依製程作業實行指示的時機，至製程處方的實行的時間會變零亂，擔心對基板處理結果造成不良影響。(2) In the present embodiment, since the maintenance recipe is executed in the first step of the preprocessing of the process operation, it does not affect the process recipe executed in the main process, so the influence on the substrate processing result can be extremely reduced . Even in the case of continuous batch processing, when the maintenance recipe is executed frequently, the time until the process recipe is executed becomes constant, so that the substrate processing result can be stabilized. On the other hand, the conventional technique of executing the next process operation after the completion of the maintenance prescription is to execute the maintenance prescription after the completion of the maintenance prescription at a stage when it is unclear whether there is an instruction to execute the process operation, and according to the timing of the execution instruction of the process operation, to the time of the process prescription. The execution time will be messy, and there is concern that it will adversely affect the substrate processing results.

(3)在本實施形態中，可使維修處理編入至生產處理的製程作業的前處理的前頭步驟中，因此可進行在前處理的事前警報復原(recovery)處理。藉此，可確認維修項目的現在值實行維修處理的臨界值之後實行製程處方，例如，即使維修項目的現在值超過實行維修處理的臨界值，也會因為被構成為實行維修處理，將現在值設為零之後實行製程處方，所以可使基板處理結果安定。(3) In the present embodiment, since the maintenance process can be incorporated into the preceding step of the pre-processing of the manufacturing process, the pre-alarm recovery process of the pre-processing can be performed. In this way, the process recipe can be executed after confirming the current value of the maintenance item and the critical value for performing the maintenance process. Since the process recipe is executed after setting it to zero, the substrate processing result can be stabilized.

(4)在本實施形態中，2次以上連續實行製程處方時，即使裝置認知(控制部121判定)在第1次的製程處方實行中到達預定的維修臨界值需要維修，也會因為可使保養處方實行於第2次的製程處方的前處理的前頭步驟，所以在實行第2次的製程處方之前，可將監視對象的維修項目的現在值設為零。(4) In the present embodiment, when the process recipe is executed two or more times continuously, even if the device recognizes (determined by the control unit 121 ) that maintenance is required when the predetermined maintenance threshold is reached in the first process recipe execution, it will be Since the maintenance recipe is executed in the preceding step of the preprocessing of the second process recipe, the current value of the maintenance item to be monitored can be set to zero before the second process recipe is executed.

(5)在本實施形態中，2次以上連續實行製程處方時，即使裝置認知(控制部121判定)在第1次的製程處方實行中到達預定的維修臨界值需要維修，也會因為可使保養處方實行於第2次的製程處方的前處理的前頭步驟，而將監視對象的維修項目的現在值設為零的狀態下，使第2次的製程處方實行，所以可使基板處理結果的可靠度提升。(5) In the present embodiment, when the process recipe is executed two or more times continuously, even if the device recognizes (the control unit 121 determines) that the maintenance threshold is reached in the first process recipe execution, maintenance is required because the The maintenance recipe is executed in the first step of the preprocessing of the second process recipe, and the current value of the maintenance item to be monitored is set to zero, and the second process recipe is executed, so the results of the substrate processing can be Increased reliability.

(6)在本實施形態中，藉由在副處方的前頭步驟實行N2 淨化處方，可在晶圓的移載前，以大流量的惰性氣體來吹走滯留於密封罩的死角的粒子源。(6) In the present embodiment, by executing the N 2 purging recipe in the first step of the sub-recipe, it is possible to blow away the particle source remaining in the dead space of the sealing cover with a large flow of inert gas before the transfer of the wafer. .

若根據本實施形態，則為了不影響在正式處理(晶舟裝載工程、處理工程、晶舟卸載工程)的基板處理結果，而被構成為將保養處方編入至前處理的前頭步驟，使正式處理開始(製程處方開始)時的爐內環境形成一定。這因為前處理的前頭步驟是最遠離正式處理的第1步驟的步驟，所以當然是如此。但是，例如，若將從保養處方結束後到開始正式處理的第1步驟的時間設為預定時間以上，則只要得知不對正式處理(晶舟裝載工程、處理工程、晶舟卸載工程)的基板處理結果造成影響，總之，只要可保持預定時間以上即可，並非必須將保養處方編入至前處理的前頭步驟。According to the present embodiment, in order not to affect the substrate processing results in the main processing (boat loading process, processing process, and boat unloading process), the maintenance recipe is incorporated into the preceding step of the preprocessing, and the main processing The furnace environment at the start (start of the process recipe) is constant. This is of course the case because the first step of the preprocessing is the step farthest from the first step of the main processing. However, for example, if the time from the end of the maintenance prescription to the first step of starting the actual processing is set to be equal to or longer than the predetermined time, it is only necessary to know the substrates that are not subject to the actual processing (boat loading process, processing process, and boat unloading process). In short, as long as it can be maintained for a predetermined time or more, the treatment result does not have to be incorporated into the first step of the pretreatment.

本案的實施形態的控制部121是不限於構成為專用的電腦的情況，亦可構成為泛用的電腦。例如，準備儲存了上述的程式的外部記憶裝置(例如USB記憶體等的半導體記憶體等)，利用此外部記憶裝置來將程式安裝於泛用的電腦等，藉此可構成本實施形態的控制器121。但，用以供給程式至電腦的手段是不限於經由外部記憶裝置來供給的情況。例如，亦可利用網際網路或專線等的通訊手段，不經由外部記憶裝置來供給程式。記憶裝置128或外部記憶裝置是被構成為電腦可讀取的記錄媒體。以下，亦可將該等總簡稱為記錄媒體。在本說明書中稱為記錄媒體時，是有只包含記憶裝置128單體時，只包含外部記憶裝置單體時，或包含該等的雙方時。The control unit 121 of the embodiment of the present invention is not limited to the case where it is configured as a dedicated computer, and may be configured as a general-purpose computer. For example, an external memory device (such as a semiconductor memory such as a USB memory) that stores the above-mentioned program is prepared, and the program is installed in a general-purpose computer using this external memory device, thereby configuring the control of this embodiment. device 121. However, the means for supplying the program to the computer is not limited to the case of supplying through an external memory device. For example, it is also possible to use communication means such as the Internet or a dedicated line to supply the program without going through an external memory device. The memory device 128 or the external memory device is a computer-readable recording medium. Hereinafter, these general abbreviations may also be referred to as recording media. When referred to as a recording medium in this specification, it includes only the memory device 128 alone, only the external memory device alone, or both.

另外，本案的實施形態的基板處理裝置10是不僅製造半導體的半導體製造裝置，也可適用在處理LCD (Liquid Crystal Display)裝置的各種的玻璃基板的裝置。又，當然也可適用在曝光裝置、光刻(Lithography)裝置、塗佈裝置、利用電漿的處理裝置等的各種基板處理裝置。In addition, the substrate processing apparatus 10 of the embodiment of the present invention is not only a semiconductor manufacturing apparatus that manufactures a semiconductor, but also an apparatus that is applicable to processing various glass substrates of an LCD (Liquid Crystal Display) apparatus. In addition, it is of course applicable to various substrate processing apparatuses such as exposure apparatuses, lithography apparatuses, coating apparatuses, and processing apparatuses using plasma.

10:基板處理裝置10: Substrate processing device

[圖1]是表示被適用在本案的一實施形態的基板處理裝置的橫剖面圖的一例。 [圖2]是表示被適用在本案的一實施形態的基板處理裝置的縱剖面圖的一例。 [圖3]是表示被適用在本案的一實施形態的基板處理裝置的處理爐的縱剖面圖的一例。 [圖4]是說明被適用在本案的一實施形態的控制器的機能構成的圖。 [圖5]是表示被適用在本案的一實施形態的處理流程的圖。 [圖6]是被適用在本案的一實施形態的維修項目的圖示例。 [圖7]是說明被適用在本案的一實施形態的維修處理的圖示例。 [圖8]是表示圖5的處理流程的前處理工程的詳細的圖。 [圖9]是表示在圖8的前處理工程中，維修處理判定工程的詳細的圖。 [圖10A]是以1個的作業來實行複數次的成膜處理時的比較例。 [圖10B]是表示以被適用在本案的一實施形態的1個的作業來實行複數次的成膜處理時的處理流程的圖。 [圖11]是表示被適用在本案的一實施形態的處理流程的圖。FIG. 1 is an example of a transverse cross-sectional view showing a substrate processing apparatus applied to an embodiment of the present invention. [ Fig. 2] Fig. 2 is an example of a longitudinal sectional view showing a substrate processing apparatus applied to an embodiment of the present invention. 3 is an example of a longitudinal cross-sectional view showing a processing furnace applied to the substrate processing apparatus according to the embodiment of the present invention. [ Fig. 4] Fig. 4 is a diagram illustrating a functional configuration of a controller applied to an embodiment of the present invention. [ Fig. 5] Fig. 5 is a diagram showing a processing flow of an embodiment applied to the present invention. [ Fig. 6 ] It is an example of a diagram of a maintenance item applied to an embodiment of the present invention. [ Fig. 7] Fig. 7 is an example of a diagram illustrating a maintenance process applied to an embodiment of the present invention. [ Fig. 8] Fig. 8 is a detailed diagram showing the preprocessing process of the processing flow of Fig. 5 . [ Fig. 9] Fig. 9 is a diagram showing details of the maintenance process determination process in the preprocessing process of Fig. 8 . [ FIG. 10A ] A comparative example in which a plurality of film formation processes are performed in one operation. [ Fig. 10B ] A diagram showing a process flow when a plurality of film formation processes are performed by one job applied to one embodiment of the present invention. [ Fig. 11 ] A diagram showing a processing flow of an embodiment applied to the present invention.

6A,6B:搬送室 6A, 6B: Transfer room

8:移載室 8: Transfer room

9:收納室 9: Storage room

21:晶圓傳送盒開啟器 21: Wafer cassette opener

22:裝載埠 22: Load port

90A,90B:閘閥 90A, 90B: Gate valve

110:晶圓傳送盒 110: Wafer transfer box

125:移載機 125: Transfer Machine

Claims (20)

一種半導體裝置的製造方法，係具有備妥處理爐內的處理環境的前處理工程、處理基板的成膜工程及後處理工程之半導體裝置的製造方法，其特徵為：在前述前處理工程的第一步驟中，按照錯誤的內容，判定是否實行適當選擇來維修構成前述處理爐內的構件之保養處方。 A method of manufacturing a semiconductor device, comprising a pre-processing process for preparing a processing environment in a processing furnace, a film-forming process for processing a substrate, and a post-processing process, characterized in that: in the first step of the pre-processing process In one step, according to the content of the error, it is judged whether or not to carry out an appropriate selection for the maintenance of the components constituting the above-mentioned processing furnace. 如請求項1記載的半導體裝置的製造方法，其中，前述前處理工程的第一步驟，係包含實行副處方的工程，在前述副處方的第一步驟判定是否實行前述保養處方。 The method of manufacturing a semiconductor device according to claim 1, wherein the first step of the pretreatment process includes a process of executing a sub-prescription, and it is determined whether or not the maintenance prescription is to be executed in the first step of the sub-prescription. 如請求項2記載的半導體裝置的製造方法，其中，在前述副處方的第一步驟中，具有：確認實行前述保養處方的設定之工程、及比較預先被設定的維修項目的現在值與臨界值之工程。 The method for manufacturing a semiconductor device according to claim 2, wherein, in the first step of the sub-recipe, the step of confirming the execution of the setting of the maintenance recipe and comparing the current value and the threshold value of the maintenance item set in advance the project. 如請求項3記載的半導體裝置的製造方法，其中，被構成為前述維修項目的現在值到達前述臨界值時，實行前述保養處方，實行前述副處方的第一步驟的其次的步驟。 The method of manufacturing a semiconductor device according to claim 3, wherein when the current value of the maintenance item reaches the threshold value, the maintenance prescription is executed, and the steps subsequent to the first step of the sub-prescription are executed. 如請求項2記載的半導體裝置的製造方法，其中，被構成為進一步，前述副處方係具有搬送基板的移載步驟，前述副處方的第一步驟實行後，實行前述移載步驟。 The method for manufacturing a semiconductor device according to claim 2, wherein the sub-recipe further includes a transfer step for transferring the substrate, and the transfer step is executed after the first step of the sub-recipe is executed. 如請求項5記載的半導體裝置的製造方法，其中，被構成為前述移載步驟實行後，使前述副處方結束而移往前述前處理工程的第一步驟的其次的步驟。 The method for manufacturing a semiconductor device according to claim 5, wherein after the transfer step is executed, the sub-recipe is completed and the process is moved to a step subsequent to the first step of the pretreatment process. 如請求項4記載的半導體裝置的製造方法，其中，被構成為前述保養處方未正常地結束時，使前述副處方強制地結束，使前述後處理工程實行。 The method for manufacturing a semiconductor device according to claim 4, wherein when the maintenance prescription is not normally terminated, the sub-prescription is forcibly terminated, and the post-processing process is executed. 如請求項4記載的半導體裝置的製造方法，其中，被構成為前述保養處方結束後，將前述維修項目的現在值設為零。 The method for manufacturing a semiconductor device according to claim 4, wherein after the maintenance prescription is completed, the current value of the maintenance item is set to zero. 如請求項1記載的半導體裝置的製造方法，其中，在前述前處理工程的第一步驟中，若被設定有前述保養處方，則實行副處方。 若未被設定有前述保養處方，則不實行副處方，而實行前述前處理工程。 The method of manufacturing a semiconductor device according to claim 1, wherein in the first step of the pretreatment process, if the maintenance prescription is set, the sub-prescription is executed. If the above-mentioned maintenance prescription is not set, the sub-prescription is not executed, and the above-mentioned pretreatment process is executed. 如請求項1記載的半導體裝置的製造方法，其中，前述前處理工程，係至少包含：將基板裝填於基板保持具的工程、及備妥處理爐的下側的基板保持具與基板所待機的移載環境的工程。 The method of manufacturing a semiconductor device according to claim 1, wherein the preprocessing step includes at least a step of loading the substrate on the substrate holder, and preparing the substrate holder and the substrate on the lower side of the processing furnace for standby. The engineering of the migration environment. 如請求項1記載的半導體裝置的製造方法，其中，前述保養處方，係包含從由淨化處方、暖機處方、洗滌處方所成的群來選擇的至少一個。 The method for manufacturing a semiconductor device according to claim 1, wherein the maintenance prescription includes at least one selected from the group consisting of a cleaning prescription, a warming-up prescription, and a washing prescription. 如請求項11記載的半導體裝置的製造方法，其中，前述淨化處方，係被構成為在處理爐內的溫度或壓力被維持於預定值的狀態下，實行供給淨化氣體的工 程。 The method for manufacturing a semiconductor device according to claim 11, wherein the purge recipe is configured to execute a process of supplying purge gas while the temperature or pressure in the processing furnace is maintained at a predetermined value. Procedure. 如請求項12記載的半導體裝置的製造方法，其中，前述淨化處方，係包含：將基板保持具***至處理爐內的工程、及從處理爐取出基板保持具的工程。 The method for manufacturing a semiconductor device according to claim 12, wherein the cleaning recipe includes a step of inserting the substrate holder into the processing furnace and a step of removing the substrate holder from the processing furnace. 如請求項13記載的半導體裝置的製造方法，其中，前述淨化處方，係更包含：用以將前述基板保持具冷卻的冷卻工程。 The method for manufacturing a semiconductor device according to claim 13, wherein the cleaning recipe further includes a cooling process for cooling the substrate holder. 如請求項3記載的半導體裝置的製造方法，其中，前述維修項目，係從由「使用次數」「使用時間」「裝置內停留時間」「累積膜厚」「可使用剩餘片數」「待機時間」「維修處理實行次數」「虛擬晶圓的使用次數」「虛擬晶圓累積膜厚」所成的群來選擇至少一個以上。 The method of manufacturing a semiconductor device according to claim 3, wherein the maintenance items are selected from "number of times of use", "use time", "stay time in the device", "accumulated film thickness", "usable remaining number of sheets" and "standby time" At least one or more is selected from the group consisting of "the number of times the maintenance process is performed", "the number of times the virtual wafer is used", and "the accumulated film thickness of the virtual wafer". 如請求項9記載的半導體裝置的製造方法，其中，前述維修處理，係從由「無指定」「警報報告」「作業實行禁止」「維修作業手動開始」「維修作業自動開始」「叫出警報處方」所成的群來選擇一個。 The method of manufacturing a semiconductor device according to claim 9, wherein the maintenance process is performed from "no designation", "alarm report", "work execution prohibition", "manual start of maintenance work", "automatic start of maintenance work", "calling an alarm" Prescription" to choose one. 如請求項16記載的半導體裝置的製造方法，其中，作為前述維修處理，前述「叫出警報處方」被選擇時，實行副處方。 The method for manufacturing a semiconductor device according to claim 16, wherein, as the maintenance process, the sub-prescription is executed when the "calling an alarm prescription" is selected. 如請求項1記載的半導體裝置的製造方法，其中，作為構成前述裝置的零件，從由設為「FOUP」的晶圓傳送盒、設為「WAFER」的晶圓、設為「BOAT」的晶舟、設為「TUBE」的反應管、設為「EQUIPMENT 」的處理裝置所成的群來選擇至少一個作為零件。 The method for manufacturing a semiconductor device according to claim 1, wherein the components constituting the device are composed of wafer transfer cassettes designated as "FOUP", wafers designated as "WAFER", and wafers designated as "BOAT". boat, reaction tube set to "TUBE", set to "EQUIPMENT" '' of processing devices to select at least one of them as a part. 一種半導體裝置的製造程式，係被實行於具備記憶部及控制部的基板處理裝置，該記憶部係儲存至少包含主處方及保養處方的檔案，該主處方係包含：備妥處理爐內的處理環境的前處理步驟、處理基板的成膜步驟及後處理步驟，該保養處方係維修構成前述處理爐內的構件，該控制部係使前述主處方及前述保養處方按照錯誤的內容來適當選擇而實行於處方實行部，其特徵為：在前述前處理步驟的第一步驟中使前述保養處方實行於前述處方實行部。 A manufacturing program of a semiconductor device is implemented in a substrate processing apparatus provided with a memory unit and a control unit, the memory unit stores a file including at least a main recipe and a maintenance recipe, the main recipe includes: preparing a treatment in a treatment furnace The pre-processing step of the environment, the film-forming step of processing the substrate, and the post-processing step, the maintenance recipe is to repair the components constituting the processing furnace, and the control unit is to appropriately select the main recipe and the maintenance recipe according to the wrong contents and It is characterized in that the maintenance prescription is executed in the prescription execution part in the first step of the preprocessing step. 一種基板處理裝置，係具備使主處方及保養處方按照錯誤的內容來適當選擇而實行於處方實行部的控制部，該主處方係包含：備妥處理爐內的處理環境的前處理步驟、處理基板的成膜步驟及後處理步驟，該保養處方係維修構成前述處理爐內的構件，其特徵為：前述處方實行部，係被構成為可在前述前處理步驟的第一步驟實行前述保養處方。 A substrate processing apparatus including a control unit for appropriately selecting a main recipe and a maintenance recipe according to wrong contents and executing them in a recipe execution unit, the main recipe including: a pre-processing step for preparing a processing environment in a processing furnace; In the film forming step and post-processing step of the substrate, the maintenance recipe is to repair the components constituting the processing furnace, and it is characterized in that the recipe execution unit is configured to execute the maintenance recipe in the first step of the pre-processing step. .
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