TWI768796B - 靜電放電保護電路及其操作方法 - Google Patents
靜電放電保護電路及其操作方法 Download PDFInfo
- Publication number
- TWI768796B TWI768796B TW110111433A TW110111433A TWI768796B TW I768796 B TWI768796 B TW I768796B TW 110111433 A TW110111433 A TW 110111433A TW 110111433 A TW110111433 A TW 110111433A TW I768796 B TWI768796 B TW I768796B
- Authority
- TW
- Taiwan
- Prior art keywords
- diode
- electrostatic discharge
- coupled
- esd
- circuit
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 179
- 239000004065 semiconductor Substances 0.000 claims abstract description 76
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- 238000007599 discharging Methods 0.000 claims description 6
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- 230000008569 process Effects 0.000 description 67
- 239000002019 doping agent Substances 0.000 description 44
- 239000000463 material Substances 0.000 description 20
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- 238000005468 ion implantation Methods 0.000 description 11
- 230000002441 reversible effect Effects 0.000 description 10
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
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- 229910052782 aluminium Inorganic materials 0.000 description 5
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
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- 229910004166 TaN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
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- 238000000227 grinding Methods 0.000 description 1
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- 238000011065 in-situ storage Methods 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/0285—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H1/00—Details of emergency protective circuit arrangements
- H02H1/0007—Details of emergency protective circuit arrangements concerning the detecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
- Burglar Alarm Systems (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063002562P | 2020-03-31 | 2020-03-31 | |
US63/002,562 | 2020-03-31 | ||
US17/147,253 | 2021-01-12 | ||
US17/147,253 US11626719B2 (en) | 2020-03-31 | 2021-01-12 | Electrostatic discharge (ESD) protection circuit and method of operating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202139417A TW202139417A (zh) | 2021-10-16 |
TWI768796B true TWI768796B (zh) | 2022-06-21 |
Family
ID=77659094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110111433A TWI768796B (zh) | 2020-03-31 | 2021-03-30 | 靜電放電保護電路及其操作方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US11862960B2 (de) |
DE (1) | DE102021101241A1 (de) |
TW (1) | TWI768796B (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102021101241A1 (de) * | 2020-03-31 | 2021-09-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Schutzschaltung für elektrostatische entladung (esd) und verfahren zum betreiben derselben |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201939709A (zh) * | 2018-01-24 | 2019-10-01 | 日商東芝記憶體股份有限公司 | 半導體裝置 |
TW201944571A (zh) * | 2018-04-18 | 2019-11-16 | 旺宏電子股份有限公司 | 靜電防護裝置 |
TW201944677A (zh) * | 2018-04-18 | 2019-11-16 | 友達光電股份有限公司 | 靜電放電防護電路、具有靜電放電防護功能的顯示面板、以及靜電放電防護結構 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6249410B1 (en) * | 1999-08-23 | 2001-06-19 | Taiwan Semiconductor Manufacturing Company | ESD protection circuit without overstress gate-driven effect |
US6501630B1 (en) * | 1999-12-17 | 2002-12-31 | Koninklijke Philips Electronics N.V. | Bi-directional ESD diode structure |
KR100631958B1 (ko) | 2005-08-25 | 2006-10-04 | 주식회사 하이닉스반도체 | 정전기 방전 보호 회로 |
US8027131B2 (en) | 2008-06-30 | 2011-09-27 | Infineon Technologies Ag | Method and circuit arrangement for protection against electrostatic discharges |
KR20100104332A (ko) | 2009-03-17 | 2010-09-29 | (주)페타리 | 정전기 방전 보호 소자 및 이의 제조 방법 |
JP6022804B2 (ja) | 2011-07-25 | 2016-11-09 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
US9130008B2 (en) | 2013-01-31 | 2015-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Robust ESD protection with silicon-controlled rectifier |
US10476263B2 (en) | 2015-12-31 | 2019-11-12 | Novatek Microelectronics Corp. | Device and operation method for electrostatic discharge protection |
US10211200B2 (en) | 2017-02-01 | 2019-02-19 | Indian Institute Of Science | Low trigger and holding voltage silicon controlled rectifier (SCR) for non-planar technologies |
US11228174B1 (en) | 2019-05-30 | 2022-01-18 | Silicet, LLC | Source and drain enabled conduction triggers and immunity tolerance for integrated circuits |
US11626719B2 (en) * | 2020-03-31 | 2023-04-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrostatic discharge (ESD) protection circuit and method of operating the same |
DE102021101241A1 (de) * | 2020-03-31 | 2021-09-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Schutzschaltung für elektrostatische entladung (esd) und verfahren zum betreiben derselben |
US20210305809A1 (en) * | 2020-03-31 | 2021-09-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrostatic discharge (esd) protection circuit and method of operating the same |
US11848554B2 (en) * | 2021-04-21 | 2023-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrostatic discharge circuit and method of operating same |
-
2021
- 2021-01-21 DE DE102021101241.4A patent/DE102021101241A1/de active Pending
- 2021-03-30 TW TW110111433A patent/TWI768796B/zh active
-
2023
- 2023-03-30 US US18/128,693 patent/US11862960B2/en active Active
- 2023-11-24 US US18/518,725 patent/US20240106223A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201939709A (zh) * | 2018-01-24 | 2019-10-01 | 日商東芝記憶體股份有限公司 | 半導體裝置 |
TW201944571A (zh) * | 2018-04-18 | 2019-11-16 | 旺宏電子股份有限公司 | 靜電防護裝置 |
TW201944677A (zh) * | 2018-04-18 | 2019-11-16 | 友達光電股份有限公司 | 靜電放電防護電路、具有靜電放電防護功能的顯示面板、以及靜電放電防護結構 |
Also Published As
Publication number | Publication date |
---|---|
US20230238793A1 (en) | 2023-07-27 |
US20240106223A1 (en) | 2024-03-28 |
US11862960B2 (en) | 2024-01-02 |
DE102021101241A1 (de) | 2021-09-30 |
TW202139417A (zh) | 2021-10-16 |
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