TWI768796B - 靜電放電保護電路及其操作方法 - Google Patents

靜電放電保護電路及其操作方法 Download PDF

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Publication number: TWI768796B
Authority: TW; Taiwan
Prior art keywords: diode; electrostatic discharge; coupled; esd; circuit
Prior art date: 2020-03-31

Application number

TW110111433A

Other languages

English (en)

Chinese (zh)

Other versions

TW202139417A (zh

Inventor

葉昱宏

林文傑

李介文

Original Assignee

台灣積體電路製造股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2020-03-31

Filing date

2021-03-30

Publication date

2022-06-21

2021-01-12 Priority claimed from US17/147,253 external-priority patent/US11626719B2/en

2021-03-30 Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司

2021-10-16 Publication of TW202139417A publication Critical patent/TW202139417A/zh

2022-06-21 Application granted granted Critical

2022-06-21 Publication of TWI768796B publication Critical patent/TWI768796B/zh

Links

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Images

Classifications

- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/0285—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H1/00—Details of emergency protective circuit arrangements
- H02H1/0007—Details of emergency protective circuit arrangements concerning the detecting means
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Semiconductor Integrated Circuits (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Emergency Protection Circuit Devices (AREA)
Burglar Alarm Systems (AREA)

TW110111433A 2020-03-31 2021-03-30 靜電放電保護電路及其操作方法 TWI768796B (zh)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
US202063002562P	2020-03-31	2020-03-31
US63/002,562		2020-03-31
US17/147,253		2021-01-12
US17/147,253 US11626719B2 (en)	2020-03-31	2021-01-12	Electrostatic discharge (ESD) protection circuit and method of operating the same

Publications (2)

Publication Number	Publication Date
TW202139417A TW202139417A (zh)	2021-10-16
TWI768796B true TWI768796B (zh)	2022-06-21

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Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW110111433A TWI768796B (zh)	2020-03-31	2021-03-30	靜電放電保護電路及其操作方法

Country Status (3)

Country	Link
US (2)	US11862960B2 (de)
DE (1)	DE102021101241A1 (de)
TW (1)	TWI768796B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE102021101241A1 (de) *	2020-03-31	2021-09-30	Taiwan Semiconductor Manufacturing Co., Ltd.	Schutzschaltung für elektrostatische entladung (esd) und verfahren zum betreiben derselben

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW201939709A (zh) *	2018-01-24	2019-10-01	日商東芝記憶體股份有限公司	半導體裝置
TW201944571A (zh) *	2018-04-18	2019-11-16	旺宏電子股份有限公司	靜電防護裝置
TW201944677A (zh) *	2018-04-18	2019-11-16	友達光電股份有限公司	靜電放電防護電路、具有靜電放電防護功能的顯示面板、以及靜電放電防護結構

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6249410B1 (en) *	1999-08-23	2001-06-19	Taiwan Semiconductor Manufacturing Company	ESD protection circuit without overstress gate-driven effect
US6501630B1 (en) *	1999-12-17	2002-12-31	Koninklijke Philips Electronics N.V.	Bi-directional ESD diode structure
KR100631958B1 (ko)	2005-08-25	2006-10-04	주식회사 하이닉스반도체	정전기 방전 보호 회로
US8027131B2 (en)	2008-06-30	2011-09-27	Infineon Technologies Ag	Method and circuit arrangement for protection against electrostatic discharges
KR20100104332A (ko)	2009-03-17	2010-09-29	(주)페타리	정전기 방전 보호 소자 및 이의 제조 방법
JP6022804B2 (ja)	2011-07-25	2016-11-09	ルネサスエレクトロニクス株式会社	半導体集積回路
US9130008B2 (en)	2013-01-31	2015-09-08	Taiwan Semiconductor Manufacturing Co., Ltd.	Robust ESD protection with silicon-controlled rectifier
US10476263B2 (en)	2015-12-31	2019-11-12	Novatek Microelectronics Corp.	Device and operation method for electrostatic discharge protection
US10211200B2 (en)	2017-02-01	2019-02-19	Indian Institute Of Science	Low trigger and holding voltage silicon controlled rectifier (SCR) for non-planar technologies
US11228174B1 (en)	2019-05-30	2022-01-18	Silicet, LLC	Source and drain enabled conduction triggers and immunity tolerance for integrated circuits
US11626719B2 (en) *	2020-03-31	2023-04-11	Taiwan Semiconductor Manufacturing Company, Ltd.	Electrostatic discharge (ESD) protection circuit and method of operating the same
DE102021101241A1 (de) *	2020-03-31	2021-09-30	Taiwan Semiconductor Manufacturing Co., Ltd.	Schutzschaltung für elektrostatische entladung (esd) und verfahren zum betreiben derselben
US20210305809A1 (en) *	2020-03-31	2021-09-30	Taiwan Semiconductor Manufacturing Company, Ltd.	Electrostatic discharge (esd) protection circuit and method of operating the same
US11848554B2 (en) *	2021-04-21	2023-12-19	Taiwan Semiconductor Manufacturing Company, Ltd.	Electrostatic discharge circuit and method of operating same

2021
- 2021-01-21 DE DE102021101241.4A patent/DE102021101241A1/de active Pending
- 2021-03-30 TW TW110111433A patent/TWI768796B/zh active
2023
- 2023-03-30 US US18/128,693 patent/US11862960B2/en active Active
- 2023-11-24 US US18/518,725 patent/US20240106223A1/en active Pending

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW201939709A (zh) *	2018-01-24	2019-10-01	日商東芝記憶體股份有限公司	半導體裝置
TW201944571A (zh) *	2018-04-18	2019-11-16	旺宏電子股份有限公司	靜電防護裝置
TW201944677A (zh) *	2018-04-18	2019-11-16	友達光電股份有限公司	靜電放電防護電路、具有靜電放電防護功能的顯示面板、以及靜電放電防護結構

Also Published As

Publication number	Publication date
US20230238793A1 (en)	2023-07-27
US20240106223A1 (en)	2024-03-28
US11862960B2 (en)	2024-01-02
DE102021101241A1 (de)	2021-09-30
TW202139417A (zh)	2021-10-16

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