TWI725185B - 切削方法及切削裝置 - Google Patents

切削方法及切削裝置 Download PDF

Info

Publication number
TWI725185B
TWI725185B TW106115663A TW106115663A TWI725185B TW I725185 B TWI725185 B TW I725185B TW 106115663 A TW106115663 A TW 106115663A TW 106115663 A TW106115663 A TW 106115663A TW I725185 B TWI725185 B TW I725185B
Authority
TW
Taiwan
Prior art keywords
cutting
workpiece
holding
crack
holding table
Prior art date
Application number
TW106115663A
Other languages
English (en)
Other versions
TW201810399A (zh
Inventor
重松孝一
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201810399A publication Critical patent/TW201810399A/zh
Application granted granted Critical
Publication of TWI725185B publication Critical patent/TWI725185B/zh

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
    • B28D7/005—Devices for the automatic drive or the program control of the machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
    • B28D7/02—Accessories specially adapted for use with machines or devices of the preceding groups for removing or laying dust, e.g. by spraying liquids; for cooling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
    • B28D7/04—Accessories specially adapted for use with machines or devices of the preceding groups for supporting or holding work or conveying or discharging work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2683—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using X-ray lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

將成為不良品之裝置晶片抑制成最小限度。

一種切削方法，其係以切削刀切削被加 工物之切削方法，具備：保持步驟，其係以保持台保持被加工物；和切削步驟，其係於實施該保持步驟之後，使旋轉之切削刀切入至在該保持台被保持之被加工物，同時使該保持台和該切削刀相對性移動，依此以該切削刀切削被加工物，該切削步驟中，邊以被配置在該切削刀所致之被加工物之切削加工進行的切削進行方向中較該切削刀後方的裂紋檢測手段，檢測出被加工物中有無裂紋，邊執行切削。

Description

切削方法及切削裝置
本發明係關於切削被加工物之切削方法及切削被加工物之切削裝置。
裝置晶片之製造製程中，在由矽或化合物半導體所構成之晶圓之表面，設定被稱為切割道之格子狀之分割預定線，在藉由該分割預定線被區劃之各區域，形成IC、LSI等之裝置。該些晶圓沿著分割預定線被切削且被分割，製作各個裝置晶片。
於晶圓之分割結束之後，對被形成之各個裝置晶圓，進行確認是否有缺口或裂紋等之傷痕(參照專利文獻1)。例如，當在裝置晶片內，產生裂紋時，判定該裝置晶片為不良品。因如此之裝置晶片，裝置不會正確動作，故無法出貨。
[先前技術文獻] [專利文獻]
[專利文獻1]日本特開平9-199451號公報
[發明之概要]
在切削半導體晶圓等之被加工物的工程中，若切削刀之種類或加工條件不適當，有在該工程中產生裂紋之情形。再者，於切削工程之開始時，即使被加工物不產生裂紋而可以切削，隨著切削加工之進行，亦有切削刀之狀態變化而在被加工物產生裂紋之情形。
當對產生裂紋之被加工物，原樣地持續切削加工時，則使該裂紋延伸。再者，若以產生裂紋之條件，原樣地進行切削加工時，產生新的裂紋之可能性高。不論怎樣，當在如此之狀態下持續進行切削加工時，裂紋分布涵蓋被加工物中的寬範圍。
當切削裂紋寬範圍地分布之半導體晶圓而予以分割時，因所取得之裝置晶片多數含有裂紋，故裝置晶片之不良率變高。因此，在切削加工中產生裂紋之情況下，雖然應停止切削加工而再次審視加工條件等，但是若無法檢測出該裂紋之產生，亦不能停止切削加工等。
本發明係鑒於如此之問題點而創作出，其目的在於提供能將裝置晶片之不良品之產生率抑制成最小限度的切削方法及適合該切削方法之實施的切削裝置。
若藉由本發明之一態樣時，提供一種切削方法，其係以切削刀切削被加工物之切削方法，其特徵在於，具備：保持步驟，其係以保持台保持被加工物；和切削步驟，其係於實施該保持步驟之後，使旋轉之切削刀切入至在該保持台被保持之被加工物，同時使該保持台和該切削刀相對性移動，依此以該切削刀切削被加工物，該切削步驟中，邊以被配置在該切削刀所致之被加工物之切削加工進行的切削進行方向中較該切削刀後方的裂紋檢測手段，檢測出被加工物中有無裂紋，邊執行切削。
另外，在本發明之一態樣中，即使於該切削步驟之實施中，於以該裂紋檢測手段檢測出被加工物之裂紋之時，停止該保持台和該切削刀之相對移動或使相對移動之速度放慢亦可。
再者，若藉由本發明之其他之一態樣時，提供一種切削裝置，其係切削被加工物之切削裝置，其特徵在於，具備：保持台，其係保持被加工物；切削手段，其係具有切削在該保持台被保持的被加工物之切削刀；移動手段，其係使該切削刀和該保持台相對移動；及裂紋檢測手段，其係被配置在該切削刀所致之被加工物之切削加工進行之切削進行方向中較該切削刀後方，檢測被加工物中有無裂紋。
當藉由本發明時，被加工物邊以被配置在切削進行方法(加工進給)中較切削刀後方之裂紋檢測手段，檢測出有無裂紋，邊被切削。如此一來，在切削加工 中產生裂紋之時，立即檢測出該裂紋。
在裂紋被檢測出之情況下，即使立刻停止切削加工亦可。或是，即使使切削進給速度放慢，變更切削刀之旋轉速度等，變更成在被加工物不產生裂紋之加工條件而繼續進行切削加工亦可。如此一來，不產生新的裂紋，再者，不使既存的裂紋延伸而可以完成切削加工。
再者，在裂紋檢測手段檢測出裂紋之產生的情況下，即使切削裝置記憶與裂紋之產生位置有關的資訊亦可。之後，於分斷晶圓而拾取裝置晶圓之時，若根據該資訊，將該位置之裝置晶片判定成不良品時，可以省略判定該裝置晶片之良否的工程。
因此，藉由本發明，提供將裝置晶片之不良品之產生率抑制成最小限度的切削方法及適用於該切削方法之實施的切削裝置。
1‧‧‧被加工物
1a‧‧‧表面
3‧‧‧分割預定線
5‧‧‧裝置
7‧‧‧切割膠帶
9‧‧‧框架
2‧‧‧切削裝置
4‧‧‧基台
6‧‧‧保持台(保持手段)
6a‧‧‧保持面
6b‧‧‧流路
6c‧‧‧吸引源
6d‧‧‧保持台移動方向
8‧‧‧刀具單元(切削手段)
10‧‧‧X軸移動機構(移動手段)
12‧‧‧X軸導軌
14‧‧‧X軸移動台
16‧‧‧X軸滾珠螺桿
18‧‧‧X軸脈衝馬達
20‧‧‧支撐台
22‧‧‧夾具
24‧‧‧Y軸移動機構(分度進給手段)
26‧‧‧Y軸導軌
28‧‧‧Y軸移動台
28a‧‧‧基部
28b‧‧‧壁部
30‧‧‧Y軸滾珠螺桿
32‧‧‧Y軸脈衝馬達
34‧‧‧Z軸移動機構
36‧‧‧Z軸導軌
38‧‧‧Z軸移動台
40‧‧‧Z軸脈衝馬達
42‧‧‧切削刀
42a‧‧‧切削進行方向
43:切削液供給手段
43a:攝影裝置
43b:切削液供給管
44:裂紋檢測手段
46:框體
48:水
50:底板
52:超音波振盪部
52a:超音波振動件
54:超音波振盪收訊部
54a:超音波振動件
56:脈衝電壓產生部
58:波形檢測部
60:裂紋判定部
62:報知部
64:供給口
66:供給源
68:控制部
圖1為示意性表示被加工物的斜視圖。
圖2為示意性表示切削裝置的斜視圖。
圖3為表示裂紋檢測手段之構成的示意圖。
圖4(A)係示意性表示切削方法中之保持步驟的剖面圖，圖4(B)係示意性地表示切削方法中之切削步驟的剖面圖。
針對與本發明有關之實施型態予以說明。在與本實施型態有關之切削方法中，首先，實施以保持台保持被加工物之保持步驟。於實施該保持步驟之後，實施切削步驟。該切削步驟中，將切削刀切入被加工物，使保持台和切削刀相對移動而切削被加工物。另外，切削步驟係邊以裂紋檢測手段檢測出被加工物中有無裂紋，邊被實施。
另外，該裂紋檢測手段被配置在切削進行方向(加工進給方向)中較該切削刀後方。在該裂紋檢測手段檢測出被加工物中之裂紋之情況下，使保持台和切削刀之相對速度放慢，或者使兩者相對性停止。如此一來，因不以在被加工物產生裂紋之條件，繼續切削加工，故裂紋之產生停留在最小限度，抑制成為不良品之裝置晶片的數量。
接著，針對與本實施型態有關之切削方法之被加工物予以說明。該被加工物係以例如矽、藍寶石、SiC(矽化碳)、其他化合物半導體等之材料所構成的略圓板狀之晶圓，或藍寶石、玻璃、石英等之基板。圖1為示意性表示該被加工物之一例的斜視圖。
如圖1所示般，被加工物1之表面1a以被配列成格子狀之分割預定線3被區劃成複數區域，在各區域形成IC等之裝置5。被加工物1最終藉由與本實施型態有關之切削方法，沿著分割預定線3被切削，被分割成各個裝置 晶片。
被加工物1在框架9被黏貼於固定外周部之切割膠帶7上而被處理。當經由切割膠帶7及框架9而被處理時，在被加工物1之搬運中承受之負載等緩和，防止裂紋等之損傷的產生。再者，於切削步驟之結束後，藉由擴張切割膠帶7，可以容易地拾取裝置晶片。
接著，針對使用於與本實施型態有關之切削方法之切削步驟的切削裝置，使用圖2予以說明。圖2為示意性表示切削裝置之構成例的斜視圖。如圖2所示般，具備支撐各構成要素之基台4。
在基台4之上面，設置有保持被加工物(無圖示)之保持台(保持手段)6。在保持台6之上方，配置有切削被加工物之刀具單元(切削手段)8。
在保持台6之下方，設置有使保持台6在加工進給方向(X軸方向)移動之X軸移動機構(移動手段)10。X軸移動機構10具備被設置在基台4之上面，與X軸方向平行之一對X軸導軌12。
在X軸導軌12，以能夠滑動之方式設置有X軸移動台14。在X軸移動台14之背面側(下面側)，設置螺帽部(無圖示)，在該螺帽部，螺合與X軸導軌12平行之X軸滾珠螺桿16。
X軸滾珠螺桿16之一端部連結X軸脈衝馬達18。當以X軸脈衝馬達18使X軸滾珠螺桿16旋轉時，X軸移動台14沿著X軸導軌12而在X軸方向移動。
X軸移動台14之表面側(上面側)設置有支撐台20。在支撐台20之中央設置有保持台6。在保持台6之周圍，設置有從四方挾持固定用以保持被加工物之環狀框架(無圖示)的4個夾具22。
保持台6係與被設置在支撐台20之下方的旋轉機構(無圖示)連結，在與Z軸平行之旋轉軸之附近旋轉。保持台6之表面成為吸引保持被加工物之保持面6a。在該保持面6a，通過被形成在保持台6之內部的流路(無圖示)，作用吸引源(無圖示)之負壓，產生吸引被加工物之吸引力。
設置有與X軸移動機構10鄰接，而使刀具單元8在分度進給方向(Y軸方向)移動之Y軸移動機構(分度進給手段)24。Y軸移動機構24具備被設置在基台4之上面，與Y軸方向平行之一對Y軸導軌26。
在Y軸導軌26，以能夠滑動之方式設置有Y軸移動台28。Y軸移動台28具備與Y軸導軌26相接之基部28a，和相對於基部28a被豎立設置的壁部28b。
在Y軸移動台28之基部28a之背面側(下面側)，設置螺帽部(無圖示)，在該螺帽部，螺合與Y軸導軌26平行之Y軸滾珠螺桿30。
Y軸滾珠螺桿30之一端部連結Y軸脈衝馬達32。當以Y軸脈衝馬達32使Y軸滾珠螺桿30旋轉時，Y軸移動台28沿著Y軸導軌26而在Y軸方向移動。
在Y軸移動台28之壁部28b，設置使刀具單元8 在垂直方向(Z軸方向)移動之Z軸移動機構34。Z軸移動機構34具備被設置在壁部28b之側面，與Z軸方向平行之一對Z軸導軌36。
在Z軸導軌36，以能夠滑動之方式設置有Z軸移動台38。在Z軸移動台38之背面側(壁部28b側)，設置螺帽部(無圖示)，在該螺帽部，螺合與Z軸導軌36平行之Z軸滾珠螺桿(無圖示)。
在Z軸滾珠螺桿之一端部連結Z軸脈衝馬達40。當以Z軸脈衝馬達40使Z軸滾珠螺桿旋轉時，Z軸移動台38沿著Z軸導軌36而在Z軸方向移動。在該Z軸移動台38，支撐切削被加工物之刀具單元(切削手段)8。
刀具單元(切削手段)8具備能夠旋轉地被支撐的轉軸(無圖示)，和隨著該轉軸之旋轉而旋轉之切削刀42。刀具單元8係Z軸移動機構34作動，可以使旋轉之切削刀42沿著Z軸下降，被切入至被保持於保持台6之被加工物。
而且，在使切削刀42切入至被加工物之狀態下，使X軸移動機構(移動手段)10作動，保持台(保持手段)6，和切削刀42相對性移動時，被加工物被切削。
刀具單元8在切削加工進行之切削進行方向(加工進給方向)中較該切削刀42前方，具有切削液供給手段43，和攝影裝置43a。攝影裝置43a可以攝影被加工物1之表面，被使用於調整切削刀42之位置，以使切削刀42沿著分割預定線3而切削被加工物1。
切削液供給手段43具有被連接於切削液供給源(無圖示)且在切削刀42之附近延伸設置的切削液供給管43b，可以從被設置在切削液供給管43b之側面的複數開口，對被加工物1之表面1a供給切削液。
刀具單元8具有被配設在切削加工進行之切削進行方向(加工進給方向)中較該切削刀42後方的裂紋檢測手段44。裂紋檢測手段44在Z軸方向能夠移動地被支撐於刀具單元(切削手段)8，切削加工時接近被保持於保持台6之被加工物。
圖3表示說明裂紋檢測手段44之構成的示意圖。裂紋檢測手段44係朝向被加工物1振盪超音波，觀測反射波而檢測出被加工物1中有無裂紋。
如圖3所示般，裂紋檢測手段44係使圓筒狀之框體46接近於被保持於保持台6之保持面6a上之被加工物1而被使用。而且，在被加工物1和裂紋檢測手段44之間的空間，被供給例如水48作為超音波之傳播媒體。在框體46之下部，於較框體46之下端部上方配置底板50，在被加工物1和底板50之間，形成空間以貯留水48。
在底板50，設置有超音波振盪部52和超音波振盪收訊部54，超音波振盪部52具有的超音波振動件52a，和超音波振盪收訊部54具有的超音波振動件54a露出於被加工物1側。超音波振盪收訊部54被安裝於可以使超音波對被加工物1垂直振盪之方向，對此，超音波振盪部52被安裝成可以使超音波從非垂直之方向朝向被加工物1 振盪超音波。
超音波振盪部52和超音波振盪收訊部54分別被連接於脈衝電壓產生部56。當該脈衝電壓產生部56對超音波振動件52a施加脈衝電壓時，超音波振盪部52朝向被加工物1振盪第1超音波。再者，當脈衝電壓產生部56對超音波振動件54a施加脈衝電壓時，超音波振盪收訊部54朝向被加工物1振盪第2超音波。
在裂紋檢測手段44之框體46之底板50，開口作為超音波傳播媒體之水的供給口64，該供給口64通過框體46內之供給路而被連接於供給源66。當通過供給口64而從供給源66供給水時，底板50和被加工物1之間的空間充滿水，超音波振動件52a及超音波振動件54a被水浸漬。如此一來，不經由空氣，第1及第2超音波可以射入至被加工物1。
第1及第2超音波在被加工物1之內部重覆反射，作為反射波被超音波振盪收訊部54觀測到。當第1超音波之反射波或第2超音波之反射波射入至超音波振盪收訊部54時，該反射波被轉換成電訊號，被傳送至波形檢測部58。波形檢測部58具有濾波器等，從被傳送之電訊號排除雜音而作成反射波之波形資訊。而且，將波形資訊等傳送至裂紋判定部60。
裂紋判定部60係判定有無第1超音波之反射波或第2超音波之反射波之波形資訊所含的漫射，判定被加工物1內有無裂紋，將判定結果輸出至報知部62。報知部62係在產生裂紋之判定結果被輸入之情況下，對切削裝置2之使用者報知被加工物1內之裂紋的產生。而且，對切削裝置2之控制機器，傳送與裂紋有關之資訊，促使加工條件之變更等。
在此，依裂紋之形狀、大小、方向等之不同，有該裂紋引起之漫射無充分被反映至反射波之情況。於是，在本實施型態中，藉由使以與第1超音波不同角度振盪之第2超音波之反射波之波形資訊，對照第1超音波之反射波之波形資訊而予以解析，裂紋判定部60判定有無裂紋。控制部68控制脈衝電壓產生部56，以使兩個超音波交互振盪，使波形檢測部58檢測出各反射波之波形，使能夠檢測出所謂的裂紋。
接著，針對與本實施型態有關之切削方法之各步驟予以說明。首先，針對以保持台保持被加工物之保持步驟，使用圖4(A)予以說明。圖4(A)係說明保持步驟之剖面示意圖。
在保持步驟中，首先被黏貼於切割膠帶7上之被加工物1被載置於切削裝置2之保持台6之保持面6a上，保持該切割膠帶7之框架9藉由保持台9之夾具22被挾持。而且，通過被形成在保持台6之內部的流路6b，從吸引源6c作用負壓，被加工物1被吸引保持在保持面6a上。之後，至切削步驟完成為止，被加工物1持續被吸引保持在保持面6a上。
接著，針對使用在與本實施型態有關之切削 方法中之切削步驟，使用圖4(B)予以說明。圖4(B)係說明切削步驟之剖面示意圖。
在切削步驟中，首先使切削裝置2之刀具單元(切削手段)8之切削刀42旋轉。接著，使Z軸移動機構作動而使旋轉之切削刀42沿著Z軸下降，使從切削預定線切入至被保持台6保持之被加工物1。而且，使X軸移動機構(移動手段)作動，使保持台6和切削刀42相對性移動。如此一來，切削刀42沿著切削預定線進給而切削加工被加工物1。
刀具單元8具有被配置在切削加工進行之切削進行方向(加工進給方向)42a中較該切削刀42後方的裂紋檢測手段44。裂紋檢測手段44檢測出被切削之區域的被加工物1有無裂紋。
當開始切削加工且切削刀42切入被加工物1之端部附近之時，裂紋檢測手段44係運轉前，被定位在較運轉時高之位置。當切削加工進行，裂紋檢測手段44臨近被加工物1上之時，使接近於表面1a特定距離，從被設置在框體之底板的供給口，供給作為超音波傳播媒體之水。而且，被裂紋檢測手段44之框體，和底板，和被加工物之表面1a包圍之空間充滿水，開始裂紋檢測手段44之運轉。
首先，從裂紋檢測手段44之超音波振動件對被加工物1振盪超音波。該超音波在被加工物1中重覆反射，作為反射波被裂紋檢測手段44之超音波振盪收訊部收訊。裂紋檢測手段44係解析該反射波之波形而檢測出被加 工物1內部有無裂紋。
切削步驟中之切削加工係一面重覆執行裂紋檢測手段44所致之裂紋檢測，一面進行。在裂紋檢測手段44不檢測被加工物1內部之裂紋之期間，原樣地使切削加工進行。
當裂紋檢測手段44檢測出被加工物1內之裂紋時，因應其裂紋之狀況，例如若適當變更切削條件即可。降低切削刀42之旋轉速度，或是降低切削進行速度(加工進給)等，變更至不產生裂紋之切削條件。如此一來，該裂紋不藉由切削加工伸長，再者，不產生新的裂紋。
再者，當檢測裂紋時，即使將切削進行速度設為零而中斷切削，裂紋檢測手段44報知裂紋之檢測，而將切削裝置移行至等待指示之輸入的待機狀態亦可。因裂紋一般長度或方向等並非一定，故即使切削裝置2之使用者充分地判斷裂紋之狀態，適當地變更切削條件後再開始切削加工亦可。
當藉由本實施型態所致之切削方法時，切削步驟中在被加工物中檢測出裂紋之時，因可以立即變更切削加工之條件，故可以將因裂紋引起之裝置晶片之不良的產生抑制成最小限度。
另外，本發明並不限定於上述實施型態之記載，能夠做各種變更而加以實施。
例如，即使裂紋檢測手段檢測出裂紋之產生時，加工裝置記錄在被加工物中之該裂紋的位置亦可。而 且，即使加工裝置輸出與記錄的該位置有關之資訊亦可。
當利用與該位置有關之資訊時，拾取分割被加工物而形成之裝置晶片之時，可以將位於該裂紋之附近的裝置晶片當作不良品處理。因此，可以省略檢查該裝置晶片之工程。
再者，在上述實施型態中，雖然裂紋檢測手段被配設在切削刀之後方，但是除了裂紋檢測手段之外，即使在切削刀之前方進一步配設同樣的裂紋檢測手段亦可。一般而言，雖然被加工物於被吸引保持於切削裝置之前被檢查，裂紋之非產生被確認，但是有該檢查之後，至進行切削加工為止之期間，在被加工物產生裂紋之情況。
在如此之情況，被配設在切削刀之前方的裂紋檢測手段檢測出裂紋之時，藉由適當變更加工條件及加工處，使切削刀不進入該裂紋，依此可以防止該裂紋伸長。
再者，也有當藉由被配設在切削刀之前方的裂紋檢測手段，確認出無裂紋之區域，進行切削加工之時，被配設在切削刀之後方的裂紋檢測手段在該區域檢測出裂紋之情形。如此一來，可以確認出該裂紋因切削加工而產生。
再者，即使裂紋檢測手段被配設在切削刀之後方或前方以外亦可。在切削刀之後方配設裂紋檢測手段之情況下，由於裂紋檢測手段之大小或切削刀之大小順序，有不得不遠離進行切削加工之處而配設裂紋檢測手段 之情況。另外，在將裂紋檢測手段配設在切削刀之後方或前方以外之情況下，有可以更接近進行切削加工之處而加以配置之情況，在此情況下，可以更迅速地檢測出產生在被加工物1之裂紋。
再者，在上述實施型態中，雖然裂紋之檢測手段藉由振盪及觀測超音波，檢測出裂紋，但是即使以其他方法檢測出裂紋亦可。例如，裂紋檢測手段即使使用雷射束或X射線檢測出裂紋亦可。
其他，與上述實施型態有關之構造、方法等只要不脫離本發明之目的的範圍，可以做適當變更而加以實施。
1‧‧‧被加工物
1a‧‧‧表面
5‧‧‧裝置
6‧‧‧保持台(保持手段)
6a‧‧‧保持面
6b‧‧‧流路
6c‧‧‧吸引源
7‧‧‧切割膠帶
8‧‧‧刀具單元(切削手段)
9‧‧‧框架
22‧‧‧夾具
42‧‧‧切削刀
42a‧‧‧切削進行方向
44‧‧‧裂紋檢測單元
46‧‧‧框體
48‧‧‧水

Claims (3)

  1. 一種切削方法，其係以切削刀切削被加工物之切削方法，其特徵在於，具備：保持步驟，其係以保持台保持被加工物；和切削步驟，其係於實施該保持步驟之後，使旋轉之切削刀切入至在該保持台被保持之被加工物，同時使該保持台和該切削刀相對性移動，依此以該切削刀切削被加工物，其中：該切削步驟中，邊以被配置在該切削刀所致之被加工物之切削加工進行的切削進行方向中較該切削刀後方的裂紋檢測手段，檢測出被加工物中有無裂紋，邊執行切削，和該切削刀和該裂紋檢測手段兩者都被切削手段支撐著，且其中在該切削步驟期間，其上支撐著該切削刀和該裂紋檢測手段的該切削手段和該保持台在該切削進行方向中彼此相對移動。
  2. 如請求項1所載切削方法，其中：在該切削步驟之實施中，以該裂紋檢測手段檢測出被加工物之裂紋之時，停止該保持台和該切削刀之相對移動或使相對移動之速度放慢。
  3. 一種切削裝置，其係切削被加工物之切削裝置，其特徵在於，具備：保持台，其係保持被加工物；切削手段，其係具有切削在該保持台被保持的被加工物之切削刀；移動手段，其係使該切削刀和該保持台相對移動；及裂紋檢測手段，其係被配置在該切削刀所致之被加工物之切削加工進行之切削進行方向中較該切削刀後方，檢測被加工物中有無裂紋，和其中該切削刀和該裂紋檢測手段兩者都被該切削手段支撐著，且其中在該切削步驟期間，其上支撐著該切削刀和該裂紋檢測手段的該切削手段和該保持台在該切削進行方向中彼此相對移動。
TW106115663A 2016-06-22 2017-05-11 切削方法及切削裝置 TWI725185B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-123811 2016-06-22
JP2016123811A JP6808267B2 (ja) 2016-06-22 2016-06-22 切削方法、及び、切削装置

Publications (2)

Publication Number Publication Date
TW201810399A TW201810399A (zh) 2018-03-16
TWI725185B true TWI725185B (zh) 2021-04-21

Family

ID=60677879

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106115663A TWI725185B (zh) 2016-06-22 2017-05-11 切削方法及切削裝置

Country Status (6)

Country Link
US (1) US10121672B2 (zh)
JP (1) JP6808267B2 (zh)
KR (1) KR102331680B1 (zh)
CN (1) CN107520976B (zh)
SG (1) SG10201704583TA (zh)
TW (1) TWI725185B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6802085B2 (ja) * 2017-02-21 2020-12-16 株式会社ディスコ ウエーハの加工方法
JP6964945B2 (ja) * 2018-01-05 2021-11-10 株式会社ディスコ 加工方法
JP7106298B2 (ja) * 2018-03-05 2022-07-26 株式会社ディスコ チャックテーブル、切削装置、及び、切削装置のチャックテーブル修正方法
JP2020004785A (ja) * 2018-06-26 2020-01-09 株式会社ディスコ デバイスチップの強度検出方法
JP7308680B2 (ja) * 2019-07-11 2023-07-14 株式会社ディスコ 製造方法
JP7370230B2 (ja) * 2019-11-26 2023-10-27 株式会社ディスコ 加工溝検出装置及び切削装置
CN112693003B (zh) * 2020-12-29 2022-12-23 安徽三合建设有限公司 一种裂缝检测分离式碳酸钙板处理装置
CN116330381A (zh) * 2021-09-30 2023-06-27 福建迈可博电子科技集团股份有限公司 一种多动作联动的射频连接器绝缘子对切装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110294279A1 (en) * 2010-06-01 2011-12-01 Disco Corporation Working method for sapphire substrate
US20150027227A1 (en) * 2013-07-24 2015-01-29 Disco Corporation Crack and thickness detecting apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130806A (ja) * 1993-11-08 1995-05-19 Disco Abrasive Syst Ltd カーフチェック方法
JPH09199451A (ja) 1996-01-12 1997-07-31 Disco Abrasive Syst Ltd ダイシング方法及びその装置
JPH10312979A (ja) * 1997-05-12 1998-11-24 Disco Abrasive Syst Ltd ウェーハの切削状況の検出方法
JP2004273895A (ja) * 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
JP2005167145A (ja) * 2003-12-05 2005-06-23 Sanyo Electric Co Ltd 半導体装置の製造方法及びダイシング装置
JP4481668B2 (ja) * 2004-02-03 2010-06-16 株式会社ディスコ 切削装置
JP2007088028A (ja) * 2005-09-20 2007-04-05 Disco Abrasive Syst Ltd 分割装置及びウェーハのアライメント方法
JP2009054904A (ja) * 2007-08-29 2009-03-12 Disco Abrasive Syst Ltd 切削方法および切削装置
JP2012256749A (ja) * 2011-06-09 2012-12-27 Disco Abrasive Syst Ltd 切削装置
JP2016009751A (ja) * 2014-06-24 2016-01-18 株式会社東京精密 ダイシング装置及びダイシング方法
CN204271041U (zh) * 2014-10-20 2015-04-15 上海技美电子科技有限公司 晶圆检测装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110294279A1 (en) * 2010-06-01 2011-12-01 Disco Corporation Working method for sapphire substrate
US20150027227A1 (en) * 2013-07-24 2015-01-29 Disco Corporation Crack and thickness detecting apparatus

Also Published As

Publication number Publication date
CN107520976A (zh) 2017-12-29
TW201810399A (zh) 2018-03-16
JP2017228653A (ja) 2017-12-28
JP6808267B2 (ja) 2021-01-06
SG10201704583TA (en) 2018-01-30
US20170372908A1 (en) 2017-12-28
US10121672B2 (en) 2018-11-06
CN107520976B (zh) 2021-08-17
KR102331680B1 (ko) 2021-11-25
KR20180000294A (ko) 2018-01-02

Similar Documents

Publication Publication Date Title
TWI725185B (zh) 切削方法及切削裝置
TWI708285B (zh) 被加工物的檢查方法、檢查裝置、雷射加工裝置、及擴張裝置
US10981250B2 (en) Wafer producing apparatus
TWI734840B (zh) 晶圓的加工方法
US20190030651A1 (en) Wafer producing method and wafer producing apparatus
TWI751354B (zh) 切割裝置及晶圓的加工方法
KR20180018353A (ko) SiC 웨이퍼의 생성 방법
TWI697946B (zh) 晶圓的加工方法
TW201509592A (zh) 裂痕厚度檢測裝置
KR20210020767A (ko) 워크의 확인 방법, 및, 가공 방법
JP6991656B2 (ja) チップの製造方法
JP5453123B2 (ja) 切削方法
TW201901771A (zh) 切削裝置
KR102551970B1 (ko) 절삭 장치의 셋업 방법
US20050082267A1 (en) Laser beam machine
TWI685886B (zh) 晶圓的加工方法
TWI831925B (zh) 晶圓之加工方法
JP2017185599A (ja) 切削装置
TWI697040B (zh) 晶圓的加工方法
US20230321760A1 (en) Processing apparatus
JP2019016730A (ja) 切削装置及び被加工物の分割方法
JP2021190591A (ja) 被加工物の搬送方法
JP2018129372A (ja) ダイシング装置及びダイシング方法
JP2022134247A (ja) チップの製造方法
JP6532366B2 (ja) ウエーハの加工方法