TWI646212B - 保形氮化鋁的高成長速度製程 - Google Patents
保形氮化鋁的高成長速度製程 Download PDFInfo
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- TWI646212B TWI646212B TW104104471A TW104104471A TWI646212B TW I646212 B TWI646212 B TW I646212B TW 104104471 A TW104104471 A TW 104104471A TW 104104471 A TW104104471 A TW 104104471A TW I646212 B TWI646212 B TW I646212B
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- Prior art keywords
- substrate
- reaction chamber
- precursor
- aluminum
- processing
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- 238000000034 method Methods 0.000 title claims abstract description 173
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 34
- 230000008569 process Effects 0.000 title claims description 128
- 239000000758 substrate Substances 0.000 claims abstract description 116
- 239000002243 precursor Substances 0.000 claims abstract description 112
- 239000007789 gas Substances 0.000 claims abstract description 62
- 238000000151 deposition Methods 0.000 claims abstract description 50
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 37
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000007664 blowing Methods 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims description 74
- 239000010408 film Substances 0.000 claims description 72
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 38
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 25
- 239000012159 carrier gas Substances 0.000 claims description 25
- 238000012545 processing Methods 0.000 claims description 23
- 238000011068 loading method Methods 0.000 claims description 17
- 229910021529 ammonia Inorganic materials 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 7
- 238000011144 upstream manufacturing Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 description 38
- 239000010410 layer Substances 0.000 description 36
- 238000010926 purge Methods 0.000 description 35
- 239000000376 reactant Substances 0.000 description 29
- 238000000231 atomic layer deposition Methods 0.000 description 27
- 239000012071 phase Substances 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 23
- 239000007788 liquid Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 230000007246 mechanism Effects 0.000 description 15
- 239000000203 mixture Substances 0.000 description 13
- 238000002474 experimental method Methods 0.000 description 12
- 238000012546 transfer Methods 0.000 description 12
- 238000001704 evaporation Methods 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 10
- 238000002156 mixing Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000009472 formulation Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- -1 aluminum alkyl compound Chemical class 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- OQPDWFJSZHWILH-UHFFFAOYSA-N [Al].[Al].[Al].[Ti] Chemical compound [Al].[Al].[Al].[Ti] OQPDWFJSZHWILH-UHFFFAOYSA-N 0.000 description 2
- HDYRYUINDGQKMC-UHFFFAOYSA-M acetyloxyaluminum;dihydrate Chemical group O.O.CC(=O)O[Al] HDYRYUINDGQKMC-UHFFFAOYSA-M 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 229940009827 aluminum acetate Drugs 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000678 plasma activation Methods 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910021324 titanium aluminide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
提供在半導體基板上沈積保形氮化鋁薄膜的方法。所揭露的方法涉及:(a)使一基板暴露至一含鋁前驅物;(b)吹淨該含鋁前驅物一段時間,此段時間不足以移除實質上所有氣相的該含鋁前驅物;(c)將基板暴露至一含氮前驅物以形成氮化鋁;(d)吹淨含氮前驅物;及(e)重覆(a)至(d)。獲得較高的成長速度以及100%的階梯覆蓋率與保形性。
Description
本發明係關於一種保形氮化鋁的高成長速度製程。
半導體裝置的各種薄膜層可利用原子層沈積(ALD)製程沈積。然而,現行的ALD製程可能不適合沈積高度保形之介電薄膜。例如,許多現行的ALD製程無法提供高產量(快速沈積)與高保形性的組合。
本案提供半導體基板上之保形氮化鋁與其他材料如其他金屬氮化物與金屬氧化物的沈積方法。
一態樣涉及一種在反應室中處理具有特徵部之半導體基板的方法。該方法包含:(a)使一基板暴露至一含鋁前驅物一段充分長的時間使該含鋁前驅物能實質上吸附至該基板的一表面;(b)自該反應室吹淨該含鋁前驅物一段時間,此段時間不足以自氣相移除實質上所有的該含鋁前驅物;(c)將該基板暴露至一含氮前驅物一段充分長的時間以驅動一熱媒反應而在該基板之該表面上形成一氮化鋁層,其中該氮化鋁層實質上對該基板具有保形性且具有約1.5Å或更高的厚度;(d)自該反應室吹淨氣相之該含氮前驅物;及(e) 重覆步驟(a)至(d)。在某些實施例中,在步驟(a)至(d)之一循環期間所沈積之氮化鋁的量至少約為2Å。在某些實施例中,在步驟(a)至(d)之一循環期間所沈積之氮化鋁的量至少約為5Å。在某些實施例中,該氮化鋁層具有至少約80%的階梯覆蓋率。在各種實施例中,該基板係在約250°C 至約450°C的一製程溫度下受到處理。該基板係在約0.01 Torr 至約10 Torr的一壓力下受到處理。
在許多的實施例中,該含鋁前驅物為三甲基鋁(TMA)。在許多的實施例中,該含氮前驅物為氨氣(NH3
)。在某些實施例中,流動氮氣(N2
)以吹淨該含鋁前驅物且流動氮氣(N2
)以吹淨該含氮前驅物。在許多的實施例中,吹淨該含鋁前驅物約2秒。在許多的實施例中,該基板被暴露至該含鋁前驅物約7.5秒至約30秒。在各種實施例中,該基板被暴露至該含鋁前驅物的時間與該含鋁前驅物受到吹淨的時間的比值係介於約3.75:1至約15:1。
在某些實施例中,該基板的該特徵部具有至少約2:1的深寬比。在某些實施例中,該基板的該特徵部具有小於約100 nm的開口。在各種實施例中,該方法實質上不會造成圖案負載效應。
另一態樣涉及一種用以在基板表面沈積薄膜的設備,此設備包含:一反應室,包含用以支撐一基板的一平臺;至少一出口,用以耦合至一真空;一或多個製程氣體入口,耦合至兩或更多前驅物源;及一控制器,用以控制該設備中的操作。此控制器包含用於下列者之機器可讀指令:(a)將一第一前驅物導入該反應室中一段充分長的時間使該第一前驅物能實質上吸附至該基板的一表面;(b)吹淨該反應室一段時間,此段時間不足以自氣相移除實質上所有的該第一前驅物;(c)將一第二前驅物導入至該反應室中一段充分長的時間以在該基板表面形成一膜層,其中該膜層實質上對該基板具有保形性且具有約1.5Å或更高的厚度;(d)吹淨該反應室一段充分長的時間,此段充分長的時間能自氣相移除該第二前驅物;及(e)重覆步驟(a)至(d)。
在某些實施例中,該控制器更包含用於下列者的指令:進行操作(a)的時間為進行操作(b)的時間之約3.75至約15倍。在各種實施例中,導入該第一前驅物的指令包含自該第一前驅物的一儲槽的一頂部空間抽取該第一前驅物至該反應室。在某些實施例中,導入該第一前驅物的指令亦包含在自該頂部空間抽取該第一前驅物的下游與該反應室的上游之間使一載氣與該第一前驅物一起流動。
參考圖示更進一步說明此些與其他態樣。
在下面的敘述中,列舉許多特定細節以提供對本發明實施例的全盤瞭解。可在缺乏一些或全部此些特定細節的情況下實施文中實施例。在其他情況中,不詳細說明習知之製程操作以免不必要地模糊文中實施例的焦點。雖然利用特定實施例來說明文中的實施例,但應瞭解,本發明不限於所揭露的實施例。
製造半導體裝置通常涉及在整合製造製程中於非平面的結構上沈積一或多層薄膜。在整合製程的某些態樣中,沈積對基板起伏具有保形性的薄膜是有用的。例如,某些前段製程可能涉及沈積保形薄膜。基板的實例可包含具有特徵部的基板,深寬比可至少約為2:1或至少約為4:1或至少約為6:1或至少約為10:1。前段製程用之保形薄膜的實例包含硬遮罩、蝕刻停止件及封蓋層。利用此類薄膜所製造的前段結構包含電晶體(如FinFET)及含金屬的記憶體裝置。
原子層沈積(ALD)製程使用表面媒介沈積反應以一層接著一層的方式沈積薄膜。在ALD製程的一實例中,將包含複數表面活性位置的基板表面暴露至一劑量之以氣相分佈的第一前驅物。此第一前驅物的部分分子可在頂部基板表面形成一濃縮相,此濃縮相包含第一前驅物的化學吸附之物種及/或物理吸附之分子。接著,排空反應室俾以移除氣相之第一前驅物並僅留下已吸附之物種。接著將第二前驅物導入反應室俾使此些分子中的某些分子吸附至基板表面。接著可再次排空反應室以移除未受束縛的第二前驅物分子。熱能可活性第一與第二前驅物間的表面反應以形成一薄膜層。在某些製程中,第二前驅物會立即與已吸附的第一前驅物反應。在其他實施例中,第二前驅物僅會在暫時施加活化源後才反應。可使用額外的ALD循環建立薄膜厚度。
傳統的ALD製程如上述者會形成高度保形的薄膜。薄膜的保形性通常以階梯覆蓋率量測。藉著比較一特徵部之底部、側壁或頂部之沈積薄膜的平均厚度與一特徵部之底部、側壁或頂部之沈積薄膜的平均厚度可計算階梯覆蓋率。例如,藉著將特徵部側壁上之沈積薄膜之平均厚度除以特徵部頂部處之沈積薄膜之平均厚度得到一結果,然後將結果乘以100獲得一百分比,可計算出階梯覆蓋率。傳統的ALD製程可沈積得到階梯覆蓋率接近100%的薄膜。
然而,雖然沈積薄膜高度保形,但傳統的ALD製程具有低沈積成長速度例如對於沈積氮化鋁而言每一循環約0.7 Å至1.0 Å或每一循環少於一單層。較低成長速度會導致較低的製造效率,因而較低的產量。
觀察到化學氣相沈積(CVD)與物理氣相沈積(PVD)具有較高的沈積成長速度。然而在此些製程中,沈積薄膜具有低保形性,階梯覆蓋率係介於約50%至約70%之間。是以,現行的製程無法沈積同時具有高成長速度與高保形性的保形薄膜。
文中提供以高成長速度沈積高度保形薄膜的方法。此些方法涉及一種經修改的ALD方法,其結合類CVD之反應與ALD表面反應。類CVD條件受到推廣但卻不會大幅地失去保形性。此些方法可涉及:低吹淨對給劑比以及沈積薄膜的形成係大幅地受到熱媒反應驅動而非電漿活化反應。沈積薄膜可具有高成長速度,此高成長速度約是傳統ALD方法之成長速度的約4至約7倍,這可增加產量並減少基板的製程費用。此些方法亦產生高度保形的沈積薄膜,其階梯覆蓋率大幅地高於70%如約100%。
可進行此些方法沈積適合下列用途的薄膜:保形硬遮罩、蝕刻停止層、封蓋層、或一疊層如閘極或記憶體疊層(如磁性RAM疊層)或其他適合之半導體裝置結構的其中一或多層。在某些實例中,沈積薄膜封蓋包含閘電極及/或閘介電層的一閘極結構。在某些實施例中,沈積薄膜封蓋一磁性記憶體疊層。可在具有「特徵部」如通孔、接觸孔的基板上進行文中的方法,該特徵部的特徵在於被限制在特徵部內之一或多個窄及/或凹角的開口以及高深寬比。特徵部的一實例為半導體基板或基板上之一膜層中的孔口或通孔。另一實例為基板或膜層中的溝槽。基板可以是一矽晶圓如一200-mm晶圓、一300-mm晶圓、或一450-mm晶圓,其包含其上沈積有一或多層材料如介電材料、導電材料或半導體材料的晶圓。特徵部可被形成在此些膜層中的一或多層中。在某些實施例中,特徵部可具有至少約2:1、至少約4:1、至少約6:1、至少約10:1或更高的深寬比。特徵部亦可具有接近開口的尺寸,例如開口的直徑或線寬係介於約10 nm至500 nm例如介於約25 nm至約300 nm。可在具有特徵部的基板上進行文中的方法,此特徵部具有小於約150 nm的開口。通孔或溝槽特徵部可被稱為是未填充之特徵部或特徵部。
具有凹角輪廓的特徵部可自底部、封閉端或特徵部內部窄至特徵部開口。在各種實施例中,特徵部可具有一下層如一阻障層或附著層。下層的非限制性實例包含介電層及導電層如矽的氧化物、矽的氮化物、矽的碳化物、金屬氧化物、金屬氮化物、金屬碳化物及金屬層。在特定的實施例中,下層可以是氮化鈦(TiN)、鈦金屬(Ti)、氮化鎢(WN)、鋁化鈦(TiAl)或氧化鈦(TiOx
)。在各種實施例中,下層可以是一介電層如氧化物或氮化物或氮氧化物。介電層的實例包含氧化矽、氮化矽、氮氧化矽及其他材料。
在許多的實施例中,可在介於約250°C至約450°C或約350°C至約400°C的一溫度下進行文中的方法。一般而言,較高的沈積溫度會導致較高的沈積速度。在各種實施例中,可在介於約0.01 Torr至約10 Torr的一壓力下或在介於約0.1 Torr至約1 Torr的一壓力下進行該些方法。較高的壓力會導致沈積空間中存在較大量的反應物,藉此增加沈積速度。文中的方法係主要受到熱反應製程的驅動。在下面的實施例中,針對一180 L的反應室提供流率。在某些實例中,取決於反應室的配置,可縮放流率以適應不同的體積。
圖1為根據特定實施例之保形薄膜之沈積方法的製程流程圖。應注意,在下面列舉的化學品僅為用以說明文中實施例的一實例。在沈積室或沈積站中可以有一待處理的基板。在步驟101中,將一基板暴露至一第一前驅物,例如一含鋁前驅物如一有機鋁化合物。在某些實施例中,含鋁前驅物為烷基鋁化合物如三甲基鋁(TMA)或氫化二甲基鋁。在某些實施例中,含鋁前驅物為醋酸鋁、烷氧化物或鹵素鋁。在許多的實施例中,暴露時間或持續時間係足以在基板的表面上形成一實質上完全飽和層或吸附層。在特定的實施例中,此給劑的暴露時間可介於約5秒至約60秒如介於約7.5秒至約30秒。在特定的實施例中,TMA的流率範圍可介於約10 sccm至約350 sccm。以反應物(如含鋁前驅物)接觸基板的製程有時被稱為「給劑」。
在某些實施例中,步驟101可藉由下列方式實施:經由連接至基板所處之沈積室的一管線直接自TMA源的頂部空間抽取TMA,TMA源可以是一TMA儲槽。
在某些實施例中,步驟101可藉由下列方式實施:利用導入TMA源下游的載氣使來自頂部空間的TMA經由噴淋頭輸入反應室中。載氣可在TMA源的下游與反應室或噴淋頭的上游。在許多的實施例中,載氣為一惰性氣體。在某些實施例中,載氣可為氮氣(N2
)、氬氣(Ar)、氫氣(H2
)或氦氣(He)。在某些實施例中,載氣的流率可介於約50 sccm至約1000 sccm。當使用載氣將基板暴露至TMA時,TMA的總流率可以更高如純TMA蒸氣介於約10 sccm至約200 sccm且載氣流率介於約150 sccm至約950 sccm。在某些實施例中,TMA的總流率可以更低。
在步驟103中,吹淨反應室或站一段不足以完全吹淨氣相含鋁前驅物的時間。在許多的實施例中,藉著流動一吹淨氣體如氮氣(N2
)以吹淨反應室或站。在特定的實施例中,吹淨氣體的流率係介於約15 sccm至約500 sccm之間。吹淨氣體係在第一前驅物流停止後被導入。吹淨時間或吹淨的持續時間可不足以完全地吹淨氣相含鋁前驅物,俾以同時存在來自步驟101之表面吸附以及在反應空間中未在基板表面上或鬆散地黏附至基板的剩餘氣相含鋁前驅物。在許多的實施例中,吹淨時間對給劑時間的比值如步驟103對步驟101的時間比值例如可介於約3:1至約20:1如介於約3.75:1至約15:1。在某些實施例中,吹淨時間係少於約5秒例如介於約0.1秒至約5秒或約2秒。在某些實施例中,步驟103中的吹淨可藉由排空反應室來達成。
在步驟105中,將基板暴露至一第二前驅物或例如一含氮前驅物一段足以在基板之表面上藉由熱反應形成一膜層如氮化鋁的時間。在特定的實施例中,該含氮前驅物為氨氣(NH3
)。在許多的實施例中,將基板暴露至含氮前驅物介於約1秒至約60秒或約2.5秒或約30秒的時間。在各種實施例中,所得的氮化鋁層具有約1.5 Å或更高的厚度,通常大於3Å/循環。在某些實施例中,含氮前驅物的流率可介於約0.1 slm至約20 slm (如介於約1至約10 slm)。在某些實施例中,在暴露至含氮前驅物的期間可使用載氣。適合載氣的一實例為氮氣(N2
),若使用氮氣作為載氣且與含氮前驅物共流,則可以介於約500 sccm至10 slm的流率流動氮氣。
在步驟105中,主要的反應為表面上的ALD反應俾以發生以表面擴散主導的動力學以產生保形氮化鋁層。不受限於特定的理論,由於在吹淨步驟103後剩餘的氣相含鋁前驅物與進入反應空間的含氮前驅物之間發生的類CVD反應,同時發生在氣相中的反應或氣相成核。這貢獻了薄保形薄膜的較高成長速度。以表面擴散主導的動力學(與ALD相關)的強分佈能確保保形性的保存。
在步驟107中,吹淨含氮前驅物。在許多的實施例中,吹淨包含流動吹淨氣體例如氮氣(N2
)。在某些實施例中,以介於約0 sccm至約10,000 sccm的流率流動吹淨氣體介於約5秒至約10秒。此吹淨可足以自反應空間或站或室中移除實質上所有剩餘的含氮前驅物。
在步驟109中,工作流程判斷薄膜是否已沈積至適當厚度,若是則結束薄膜沈積方法。若薄膜尚未被沈積至適當厚度,則重覆步驟101至107直到薄膜被沈積至適當厚度。
「循環」的概念係與文中的各種實施例的討論相關。一般而言,一個循環是進行表面沈積反應一次所需的一組最少步驟。一循環的結果為在基板表面上至少形成一部分膜層。通常一循環可僅包含下列步驟:輸送每一反應物至基板表面並使每一反應物吸附至基板表面所需的步驟,以及接著使此些已吸附之反應物反應而形成薄膜之部分膜層的步驟。當然,循環可包含某些輔助步驟如掃除複數反應物或副產物中的一者及/或處理剛沈積之部分膜層的步驟。一般而言,一循環只包含一特定步驟程序的單一事件。例如,一循環可包含下列步驟:(i)輸送/吸附反應物A;(ii)將一部分的A掃離反應室;(iii)在足以驅動A與反應物B之反應的條件下輸送/吸附B以在表面上形成部分膜層;及(iv)將B掃離反應室。
在圖2的時序200中顯示進行圖1中所示之方法的兩個沈積循環。在此程序中,如210A與210B中所示的一沈積循環包含暴露第一前驅物、吹淨、暴露第二前驅物及另一吹淨。如所示,暴露與吹淨階段可自時間軸的左至右進行,在程序上以線來表示一氣體是否流動。
例如,在沈積循環210A的吹淨階段240A與280A(分別對應至圖1中進行的步驟103與107)期間流動氮氣(N2
)。在沈積循環210B的吹淨階段240B與280B(分別對應至圖1中進行的步驟103與107)期間流動氮氣。例如,TMA被顯示為在沈積循環210A之第一前驅物或TMA暴露階段220A(對應至圖1中進行的步驟101)期間流動的氣體。TMA亦在沈積循環210B之TMA暴露階段220B(對應至圖1中重覆步驟101)期間流動。如圖2中所示,可使氮氣或其他載氣與TMA一起流動。例如,氨氣被顯示為在沈積循環210A之第二前驅物或氨氣暴露階段260A(對應至圖1中進行的步驟105)期間流動的氣體。氨氣亦在沈積循環210B之氨氣暴露階段260B(對應至圖1中重覆步驟105)期間流動。在此處應注意,在第一沈積循環210A後,回應至圖1之步驟109的是,薄膜尚未被沈積至適當厚度,是以在第二沈積循環210B中重覆步驟101至107。
例如,一「配方」或單一沈積循環程序可始於,利用流率介於約15 sccm至500 sccm的N2
作為載氣暴露流率介於約10 sccm至350 sccm的TMA介於約7.5秒至約30秒。接著,可關閉TMA流並使氮氣以介於約0 sccm至約10,000 sccm的流率持續流動作為吹淨氣體吹淨約2秒。接著,可開啟氨氣(NH3
)流,利用流率介於約500 sccm至10 slm的氮氣作為載氣暴露流率介於約1 slm至10 slm的氨氣30秒。接著,氨氣可與已吸附以及氣相的TMA反應以形成氮化鋁薄膜。接著,可關閉氨氣流並使氮氣以介於約0 sccm至約10,000 sccm的流率持續流動作為吹淨氣體吹淨約6秒。可在約0.1 Torr的一壓力與介於約350°C至約400°C的一溫度下進行此例示性的沈積循環。一沈積循環如此處提供作為實例的沈積循環可被重覆直到沈積到期望厚度的薄膜。例如,氮化鋁薄膜可以介於約每循環約2.5Å至約8Å的沈積速度沈積。所得的氮化鋁薄膜可具有至少約90%或約100%的階梯覆蓋率且可取決於所進行的沈積循環的次數。
以文中方法所沈積的薄膜可導致介於每循環約1.5 Å至約10 Å 或每循環約2 Å至約5 Å的沈積速度或成長速度。在許多的實施例中,沈積薄膜為高度保形的且具有至少約80%或至少約90%或至少約99%或約100%的階梯覆蓋率。 此些程度的保形性以及沈積速度係表現在具有高深寬比(如約1:2或更大或約1:6或更大)及小尺寸(如約100 nm或更小或者約60 nm或更小的開口)的特徵部中。在許多的實施例中,藉所文中方法所沈積的薄膜導致較小或無圖案負載效應,其中圖案負載或「微負載」效應被定義為,在相同沈積條件下薄膜會以不同方式沈積在具有不同深寬比與不同區域結構密度的相同晶圓上的傾向。
在某些實施例中,可使用電漿。在使用電漿的實施例中,該方法可包含:(1)將基板暴露至一含金屬之前驅物(如含鋁前驅物)一段足以使前驅物吸附至基板表面上的時間;(2)吹淨該含金屬之前驅物一段不足以移除實質上所有氣相之含金屬之前驅物的時間;(3)將基板暴露至含氮或含氧前驅物並同時啟動電漿以在基板上形成金屬氮化物或金屬氧化物薄膜;(4)自氣相吹淨含氮前驅物;及(5)重覆(1)至(4)。在特定的實施例中,該含金屬的前驅物為TMA。在某些實施例中,藉由吹淨氣體如氮氣來進行吹淨。在某些實施例中,該含氮前驅物為氨氣。在許多的實施例中,電漿的射頻(RF)功率可介於約13.56 MHz至約40 MHz。對於一300 mm的晶圓而言,RF功率的範圍可介於每站約0 kW至約每站2.5 kW。在許多的實施例中,電漿具有介於基板之約0 Watts/cm2
至約3.54 Watts/cm2
的RF功率密度。在下列案件中提供了在保形薄膜沈積(CFD)製程中使用電漿的實例:2011年4月11日申請之美國專利申請案13/084,399以及2011年9月1日申請之美國專利申請案US 13/224,240,將其所有內容包含於此作為參考。
圖1中所示的方法可利用其他化學品施行。步驟101中之第一前驅物的實例包含含金屬化合物如含鋁前驅物如烷基鋁化合物如三甲基鋁(TMA)或氫化的二甲基鋁。在某些實施例中,含鋁前驅物為醋酸鋁、烷氧化物或鹵化鋁。一般而言,含金屬之前驅物包含在沈積條件下具有高蒸氣壓的有機金屬化合物如烷基金屬化合物以及金屬鹵化物。此類化合物以蒸氣狀態存在且能被輕易地輸送至基板並吸附於其上。文中所述的某些方法可適用於涉及有機金屬或鹵化物前驅物以及作為各種金屬系統之半反應物之氨氣/水(NH3
/H2
O)或臭氧(O3
)的熱ALD製程。金屬系統的實例包含鈦(Ti)、鉿(Hf)、鋯(Zr)、錳(Mn)、鎢(W)及鉭(Ta)。在步驟103與107所用之吹淨氣體的實例包含氮氣(N2
)、氬氣 (Ar)、氦氣(He)、氫氣(H2
)、氧氣(O2
)及其他氣體。在步驟105中第二前驅物的實例包含含氮前驅物如氨氣(NH3
)或三級丁胺(TBA)。第二前驅物的其他實例包含含氧前驅物如臭氧(O3
)、水蒸氣(H2
O)、甲醇(CH4
O)、乙醇(C2
H6
O)、過氧化物及其他者。可與前驅物一起流動的載氣的實例包含氬氣(Ar)、氦氣(He)及氮氣(N2
)。 設備
圖3A顯示具有用以維持低壓環境之製程室體302之原子層沈積(ALD)製程站300之一實施例的概圖。在一共同的低壓設備環境中可包含複數ALD製程站300。例如,圖4顯示多站製程設備400之一實施例。在某些實施例中,可藉由一或多個電腦控制器350以程式方式調整ALD 製程站300的一或多個硬體參數,此些硬體參數包含下面會詳細討論的硬體參數。
ALD 製程站300係與反應物輸送系統301a流體交流,反應物輸送系統301a係用以將製程氣體輸送至分散噴淋頭306。反應物輸送系統301a包含用以混合及/或調整欲輸送至噴淋頭306之製程氣體的混合容器304。一或多個混合容器入口閥320可控制製程氣體至混合容器304的導入。
圖3B顯示用以輸送反應物至噴淋頭306之另一反應物輸送系統301b的概圖。某些反應物如三甲基鋁(TMA)在蒸發且後續輸送至製程室體302之前可以液態儲存。在圖3B中,可自頂部空間372將被容納在儲槽370中之製程液體的蒸氣抽取至限制器362,限制器362可利用載氣將反應物輸送至製程室體302。儲槽可包含量規365。在某些實施例中,載氣可在製程液體儲槽370的上游俾使載氣將原先自頂部空間372所抽取之儲槽370中之製程液體的蒸氣推經限制器362的管道接著推至製程室體302。在許多的實施例中,載氣在將來自頂部空間372之蒸氣載帶至限制器362前可先流經質量流量控制器360。在使用載氣推動蒸氣的此些實施例中,流入製程室體302之蒸氣的流率可高於未使用載氣而直接自頂部空間372抽取蒸氣至混合容器304並至製程室體302的實施例中的蒸氣流率。
例如,圖3A的實施例包含用以蒸發欲供給至混合容器304之液體反應物的蒸發點303。在某些實施例中,蒸發點303可以是一經加熱的蒸發器。自此類蒸發器所產生的飽和反應物蒸氣可在下游輸送管線中凝結。不匹配之氣體暴露至已凝結的反應物可能會產生小粒子。此些小粒子可阻塞管線、阻礙閥件操作、污染基板等。解決此些問題的某些方法涉及吹淨及/或排空輸送管線以移除剩餘的反應物。然而,吹淨輸送管線可增加製程站循環時間、不利製程站產量。是以,在某些實施例中,可熱追蹤蒸發點303下游的輸送管線。在某些實例中,亦可熱追蹤混合容器304。在一非限制性的實例中,蒸發點303下游的管線具有較高溫度的輪廓自約100°C延伸至混合容器304處的約150°C。
在某些實施例中,液體前驅物或液體反應物可在液體注射器處蒸發。例如,液體注射器可將液體反應物的脈衝注射至混合容器上游的載氣流中。在一實施例中,液體注射器可藉著瞬間使液體自較高壓力變為較低壓力來蒸發反應物。在另一實例中,液體注射器可將液體原子化為分散微滴,此些分散微滴接著在經加熱的輸送管線中蒸發。較小的液滴比較大的液滴更快蒸發,因此可降低液體注射與完成蒸發之間的延遲。較快蒸發可減少蒸發點303下游之管線的長度。在一情況中,液體注射器可直接架設至混合容器304。在另一情況中,液體注射器可直接架設至噴淋頭306。
在某些實施例中,可提供蒸發點303上游的液流控制器(LFC)以控制蒸發及輸送至製程站300之液體的質量流量。例如,LFC可包含位於LFC下游的一熱質量流量計(MFM)。接著可調整LFC的柱塞閥以回應與MFM電交流之比例-積分-微分(PID)控制器所提供的反饋控制訊號。然而,利用反饋控制可能要花一秒或更久才能穩定液流。這可能會延長給劑液態反應物所用的時間。是以,在某些實施例中,LFC可動態地在反饋控制模式與直接控制模式之間切換。在某些實施例中,這可藉由使LFC與PID控制器的感測管失效來進行。
噴淋頭306朝向基板312分散製程氣體。在圖3A所示的實施例中,基板312係位於噴淋頭306下方且被顯示為座落於平臺308上。噴淋頭306可具有任何適合的形狀且可具有任何適合數目與配置的接口以將製程氣體分散至基板312。
在某些實施例中,微體積307係位於噴淋頭306下方。在微體積中進行文中實施例會比在製程站的整個體積中進行文中實施例更能降低反應物暴露與吹淨時間、更可降低轉換製程條件(如壓力、溫度等)的所需時間且更可限制製程站機器人被暴露至製程氣體等。微體積尺寸的實例可包含但不限於介於0.1升至2升的體積。這亦可影響製造產量。在某些實施例中,文中實施例並非在微體積中進行。
在某些實施例中,可舉升或降低平臺308以將基板312暴露至微體積307及/或改變微體積307的體積。例如,在一基板傳送階段中,可舉升平臺308以將基板 312置於微體積307中。在某些實施例中,微體積307可完全圍繞基板312以及平臺308的一部分以產生一高流動阻抗區域。
選擇性地,可在部分製程期間降低及/或舉升平臺308以調變微體積307內的製程壓力、反應物濃度等。在製程期間製程室體302被維持在一基礎壓力的一情況中,降低平臺308可使微體積307被排空。微體積之體積對製程室之體積的例示性比例可包含但不限於介於1:500至1:10。應明白,在某些實施例中,可藉由適合的電腦控制器350以程式方式調整平臺高度。
在另一情況中,調整平臺308的高度可變化電漿活化期間的電漿密度及/或製程中所包含的製程循環。在完成製程階段時,可在另一基板傳送階段期間降低平臺308以自平臺308移除基板312。
雖然文中所述之例示性微體積變化係指高度可調整之平臺,但應瞭解,在某些實施例中,可調整噴淋頭306相對於平臺308的位置以變化微體積307的體積。又,應瞭解,在本發明的範疇內可藉由任何適當的機構來變化平臺308及/或噴淋頭306的垂直位置。在某些實施例中,平臺308可包含用以旋轉基板312之位向的一旋轉軸。當明白,在某些實施例中,可藉由一或多個適合的電腦控制器350以程式方式進行此些例示性調整的一或多者。
在如上述使用電漿的某些實施例中,噴淋頭306與平臺308係與用以對電漿供給能量的射頻(RF)電源314與匹配網路316電交流。在某些實施例中,可藉著控制製程站壓力、氣體濃度、RF電源、RF源頻率及電漿功率脈衝時點中的一或多者來控制電漿能量。例如,可在任何適當的功率下操作RF電源314與匹配網路316以產生具有期望之自由基物種組成的電漿。類似地,RF電源314可提供具有任何適當頻率的RF功率。在某些實施例中,RF電源314可用以彼此獨立地控制高頻與低頻RF電源。低頻RF頻率的實例可包含但不限於介於50 kHz至500 kHz的頻率。高頻RF頻率可包含但不限於介於1.8 MHz至2.45 GHz的頻率。應明白,可以離散或連續的方式調變任何適當的參數以提供表面反應用的電漿功率。在一非限制性的實例中,相較於連續供能的電漿,可間歇地脈衝電漿功率以降低對基板表面的離子轟擊。
在某些實施例中,可藉由一或多個電漿監測器原位監測電漿。在一情況中,可藉由一或多個電壓、電流感測器(如VI探針)監測電漿功率。在另一情況中,可藉由一或多個光發射光譜感測器(OES)量測電漿密度及/或製程氣體濃度。在某些實施例中,可基於來自此類原位電漿監測器的量測以程式方式調整一或多個電漿參數。例如,可在提供電漿功率之程式化控制的反饋迴路中使用OES感測器。應瞭解,在某些實施例中,可使用其他監測器監測電漿與其他製程特性。此類監測器可包含但不限於紅外線(IR)監測器、聲學監測器及壓力傳感器。
在某些實施例中,控制器350用的指令可藉由輸入/輸出控制(IOC)序列指令加以提供。在一實例中,可將用以設定製程階段之條件的指令包含在製程配方的對應配方階段中。在某些實例中,製程配方階段可依順序配置,故一製程階段的所有指令係與該製程階段同步執行。在某些實施例中,可將用以設定一或多個反應器參數的指令包含於一配方階段中。例如,一第一配方階段可包含用以設定惰性氣體及/或反應物氣體(如第一前驅物如TMA)之流率的指令以及第一配方階段用的時間延遲指令。一接續的第二配方階段可包含用以調變或停止惰性氣體及/或反應物氣體之流率的指令、用以調變載氣或吹淨氣體之流率的指令以及第二配方階段用的時間延遲指令。一第三配方階段可包含用以設定惰性氣體及/或反應物氣體(可與第一配方階段所用的氣體相同或不同,如第二前驅物如氨氣)之流率的指令、用以調變載氣流率的指令以及第三配方階段用的時間延遲指令。第四配方階段可包含用以調變或停止惰性氣體及/或反應物氣體之流率的指令、用以調變載氣或吹淨氣體之流率的指令以及第四配方階段用的時間延遲指令。應明白,在本發明的範疇內此些配方階段可以任何適合的方式被更進一步地分割及/或重覆。
在某些實施例中,可藉由加熱器310對平臺308進行溫度控制。又,在某些實施例中,可藉由蝶閥318對製程站300提供壓力控制。如圖3之實施例所示,碟閥318抑制下游真空泵浦(未顯示)所提供的真空。然而,在某些實施例中,亦可藉由變化被導入製程站300之一或多種氣體的流率來調整製程站300的壓力控制。
如上所述,可將一或多個製程站包含於於一多站製程設備中。圖4顯示具有入口加載互鎖機構402與出口加載互鎖機構404之多站製程設備400之一實施例的概圖,入口加載互鎖機構402與出口加載互鎖機構404的其中一者或兩者可包含遠端電漿源。大氣壓力下的機器人406係用以移動來自晶圓盒的複數晶圓,晶圓係經由艙408藉由大氣接口410而被載入入口加載互鎖機構402中。機器人406將晶圓放置到入口加載互鎖機構402中的平臺412上,大氣接口410關閉,然後加載互鎖機構被泵抽。在入口加載互鎖機構402包含遠端電漿源的情況下,晶圓在被導入製程室414前可被曝露至加載互鎖機構中的遠端電漿處理。又,晶圓亦可在入口加載互鎖機構402中受到加熱以例如移除水氣及被吸附的氣體。接下來,腔室傳送接口416對製程室414開放,另一機器人(未顯示)將晶圓放置到反應器中被顯示為製程用之反應器中之第一站的平臺上。雖然圖4所示的實施例包含加載互鎖機構,但應瞭解,在某些實施例中,可將晶圓直接導入製程站中。
所示之製程室414包含四個製程站,這四個製程站在圖4的實施例中被標號為1至4。每一站具有一經加熱的平臺(顯示於站1的418處)以及複數氣體線入口。應瞭解,在某些實施例中,每一製程站可具有不同或複數的用途。例如,在某些實施例中,一製程站可在ALD模式與電漿輔助ALD製程模式之間切換。額外地或或者,在某些實施例中,製程室414可包含一或多個匹配成對的ALD與電漿輔助ALD複數製程站。雖然所示的製程室414包含四個站,但當瞭解,根據本發明的製程室可具有任何適當數目的站點。例如,在某些實施例中,一製程室可具有五或更多的站點,在其他的實施例中一製程室可具有三或更少的站點。
圖4亦顯示在製程室414中用以傳送晶圓之晶圓搬運系統490的一實施例。在某些實施例中,晶圓搬運系統490可在各種製程站點之間及/或在一製程站與加載互鎖機構之間傳送晶圓。應瞭解,可使用任何適合的晶圓搬運系統。非限制性的實例包含晶圓傳送盤與晶圓搬運機器人。圖4亦顯示用以控制製程設備400之製程條件與硬體狀態之系統控制器450的一實施例。系統控制器450可包含一或多個記憶體裝置456、一或多個大量儲存裝置454及一或多個處理器452。處理器452可包含CPU或電腦、類比及/或數位輸入/輸出連接件、步進機馬達控制器板等。
在某些實施例中,系統控制器450控制製程設備400的所有活動。系統控制器450執行被儲存在大量儲存裝置454中、被載入記憶體裝置456中並在處理器452上執行的系統控制軟體458。或者,可將控制邏輯硬體編碼至控制器450中。對於此些目的可使用特殊應用積體電路、可編輯邏輯裝置(如現場可編輯閘極陣列或FPGA)等。在下面的討論中,在使用「軟體」或「碼」處可使用功能性相匹配的硬體編碼邏輯來代替。系統控制軟體458可包含用以控制下列者的複數指令:時序、氣體混合物、次飽和氣體流的量、製程室及/或站的壓力、製程室及/或站的溫度、晶圓溫度、目標的功率位準、RF功率位準、基板平臺、夾頭及/或支撐件的位置及製程設備400所進行之特定製程的其他參數。系統控制軟體458可以任何適當的方式配置。例如,可撰寫各種製程設備元件的子程式或控制物件以控制施行各種製程設備製程所需之製程設備元件的操作。可以任何適當的電腦可讀程式語言編碼系統控制軟體458。
在某些實施例中,系統控制軟體458可包含用以控制上述各種參數的輸入/輸出(IOC)序列指令。在某些實施例中,可施行被儲存在與系統控制器450相關之大量儲存裝置454及/或記憶體裝置456上的其他電腦軟體及/或程式。此目的用之程式或程式段落的實例包含基板定位程式、處理氣體控制程式、壓力控制程式、加熱器控制程式及電漿控制程式。
基板定位程式可包含製程設備元件用的程式碼,此些程式碼係用以將基板載至平臺418上並控制基板與製程設備400之其他部件之間的距離。
製程氣體控制程式可包含用於下列者之程式碼:控制氣體組成(如文中所述之TMA 、氨氣與吹淨氣體)與流率並在沈積之前選擇性地使氣體流入一或多個製程站以穩定製程站中的壓力。壓力控制程式可包含用於下列者之指令:藉著調節例如製程站之排放系統中的節流閥、流入製程站中的氣體流以控制製程站中的壓力。
加熱器控制程式可包含用以控制流至用以加熱基板之加熱單元之電流的程式碼。或者,加熱器控制程式可控制輸送至基板之加熱傳輸氣體(如氦氣)的輸送。
電漿控制程式可包含用以根據文中實施例設定一或多個製程站中施加至製程電極之RF功率位準的程式碼。
壓力控制程式可包含用以根據文中實施例維持反應室中之壓力的程式碼。
在某些實施例中,可具有與系統控制器450相關的使用者介面。使用者介面可包含顯示螢幕、該設備及/或製程條件的圖形化軟體顯示及使用者輸入裝置如指向裝置、鍵盤、觸控螢幕、麥克風等。
在某些實施例中,系統控制器450所調整的參數可與製程條件相關。非限制性實例包含處理氣體組成與流率、溫度、壓力、電漿條件(如RF偏壓功率位準)等。此些參數可以配方的形式提供予使用者,使用者可利用使用者介面來加以輸入此些參數。
用以監測製程的訊號可來自各種製程設備感測器並藉由系統控制器450的類比及/或數位輸入連接件所提供。用以控制製程的訊號可在製程設備400的類比與數位輸出連接件上輸出。可被監控之製程設備感測器的非限制性實例包含質量流量控制器、壓力感測器(如壓力計)、熱電偶等。適當程式化的反饋與控制演算法可與來自此些感測器的數據一起使用以維持製程條件。
系統控制器450可提供用以施行上述沈積製程的程式指令。程式指令可控制各種製程參數如DC功率位準、RF偏壓功率位準、壓力、溫度等。指令可控制此些參數以進行根據文中各種實施例之薄膜疊層的原位沈積。
系統控制器通常包含一或多個記憶體裝置及用以執行指令俾使設備施行根據本發明之方法的一或多個處理器。可將包含了用以控制根據本發明之製程操作之指令的機器可讀媒體耦合至系統控制器。
更進一步地在下列的美國專利申請案中討論與說明用以施行文中方法的適當設備:2011年4月11日申請且名為「PLASMA ACTIVATED CONFORMAL FILM DEPOSITION」的美國專利申請案US 13/084,399;及2011年4月11日申請且名為「SILICON NITRIDE FILMS AND METHODS」的美國專利申請案US 13/084,305,將上述每一者的所有內容包含於此作為參考。
文中所述的設備/方法可與微影圖案化設備或製程一起使用,例如用以製造半導體裝置、顯示器、LEDs、光伏面板等的微影圖案化設備或製程。一般而言,雖然沒有必要,但此些設備/製程會在一共同的製造廠房中一起使用或進行。薄膜的微影圖案化通常包含下列步驟的部分者或全部,每一步驟可由許多可能的設備達成:(1)利用旋塗或噴塗設備將光阻施加至工作件即基板上;(2)利用熱板、爐管或UV固化設備固化光阻;(3)利用一設備如晶圓步進機將光阻曝露至可見光或UV或X射線;(4)利用一設備如濕式槽顯影光阻以選擇性地移除光阻藉此將其圖案化;(5)利用一乾式或電漿輔助蝕刻設備將光阻圖案轉移至下方膜層或工作件中;及(6)利用一設備如RF或微波電漿光阻剝除設備移除光阻。 實驗 實驗1
進行實驗以評估利用文中實施例之方法沈積特徵部之階梯覆蓋率。在此實驗中,利用7.5秒之三甲基鋁(TMA)暴露、2秒吹淨、30秒之氨氣(NH3
)暴露及6秒吹淨的循環,在350°C的溫度與0.1 Torr的壓力下將氮化鋁層沈積在具有特徵部之一金屬介電基板上。反應為完全的熱反應,未啟動任何電漿。
階梯覆蓋率的量測與計算結果係顯示於下表1中。
圖5為基板上經沈積之氮化鋁薄膜的影像。氮化鋁的平均沈積速度為每循環約3.3 Å且達到100%的保形性。 實驗2
進行實驗以評估是否因為實施文中實施例而造成圖案負載效應。在此實驗中,利用7.5秒之三甲基鋁(TMA)暴露、2秒吹淨、30秒之氨氣(NH3
)暴露及6秒吹淨的循環,在350°C的溫度與0.1 Torr的壓力下將氮化鋁層沈積在具有特徵部之一金屬介電基板上。反應為完全的熱反應,未啟動任何電漿。圖5為濕式蝕刻測試或浸泡前經沈積之氮化鋁薄膜的影像。實驗係在具有2.5:1與6:1之深寬比的基板上以及平坦或無圖案的基板上進行。階梯覆蓋率的量測與計算結果係顯示於下表2中。
圖5為在深寬比為2.5:1之特徵部上經沈積之氮化鋁薄膜的影像。圖6A為在深寬比為6:1之特徵部上經沈積之氮化鋁薄膜的影像。圖6B顯示在平坦基板上經沈積之氮化鋁薄膜的影像。利用文中實施例沈積之膜層仍對深寬比上至約1:6 的特徵部具有保形性且未觀察到任何圖案負載效應。 實驗3
進行實驗以評估根據各種實施例之沈積薄膜的薄膜品質。在此實驗中,利用7.5秒之三甲基鋁(TMA)暴露、2秒吹淨、30秒之氨氣(NH3
)暴露及6秒吹淨的循環,在350°C的溫度與0.1 Torr的壓力下將氮化鋁層沈積在具有特徵部之一金屬介電基板上。反應為完全的熱反應,未啟動任何電漿。圖5為濕式蝕刻測試或浸泡前經沈積之氮化鋁薄膜的影像。
接著,利用50°C下的標準清理溶液使基板受到SC2濕式蝕刻浸泡25秒。SC2標準蝕刻劑/清理溶液的組成包含組成比例為1:1:5的HCl、H2
O2
與H2
O。下列表面顯示階梯覆蓋率的量測與計算結果。
圖7為濕式蝕刻測試後經蝕刻之氮化鋁薄膜的影像。如所示,遍及特徵部的表面處蝕刻是均勻的。計算得到之側壁對頂部蝕刻率比約為0.97。薄膜品質係與傳統ALD的品質相當。即便在濕式蝕刻浸泡後,沈積薄膜的階梯覆蓋率仍約為100%,藉此表示在沈積薄膜各處薄膜蝕刻均勻且蝕刻率一致。結果亦顯示,雖然在沈積期間具有類CVD反應,側壁上的薄膜品質係與結構之頂部與底部之平坦區域中的薄膜品質相同。這暗示著在表面處與氣相處的薄膜品質係相同或類似。 結論
雖然為了清楚瞭解的目的已詳細地說明前述實施例,但應明白,在隨附申請專利範圍的範疇內可作某些變化及修改。應注意,有許多施行本案實施例之製程、系統與設備的替代方案。因此,本案實施例應被視為說明性而非限制性,且實施例並不限於文中所列的細節。
101‧‧‧步驟
103‧‧‧步驟
105‧‧‧步驟
107‧‧‧步驟
109‧‧‧步驟
210A‧‧‧循環
210B‧‧‧循環
220A‧‧‧步驟
220B‧‧‧步驟
240A‧‧‧步驟
240B‧‧‧步驟
280A‧‧‧步驟
280B‧‧‧步驟
300‧‧‧製程站
301a‧‧‧反應物輸送系統
301b‧‧‧反應物輸送系統
302‧‧‧製程室體
303‧‧‧蒸發點
304‧‧‧混合容器
306‧‧‧噴淋頭
307‧‧‧微體積
308‧‧‧平臺
310‧‧‧加熱器
312‧‧‧基板
314‧‧‧電源
316‧‧‧匹配網路
318‧‧‧蝶閥
350‧‧‧控制器
362‧‧‧限制器
365‧‧‧量規
370‧‧‧儲槽
372‧‧‧頂部空間
400‧‧‧多站製程設備
402‧‧‧入口加載互鎖機構
404‧‧‧出口加載互鎖機構
406‧‧‧機器人
408‧‧‧艙
410‧‧‧大氣接口
412‧‧‧平臺
414‧‧‧製程室
416‧‧‧傳送接口
418‧‧‧平臺
450‧‧‧系統控制器
452‧‧‧處理器
454‧‧‧大量儲存裝置
456‧‧‧記憶體裝置
458‧‧‧系統控制軟體
490‧‧‧晶圓搬運系統
圖1為根據文中實施例之氮化鋁沈積方法的製程流程圖。
圖2為根據文中實施例之脈衝的時序圖。
圖3A與3B概略地顯示用以施行各種實施例之一反應室的一實例。
圖4為用以施行各種實施例之一設備之一實例的概圖。
圖5、6A、6B與7為根據文中實施例之實驗之沈積薄膜的影像。
Claims (19)
- 一種在反應室中處理具有特徵部之半導體基板的方法,包含:(a)使基板暴露至一含鋁前驅物一段時間,此段時間足以使該含鋁前驅物實質上吸附至該基板的一表面;(b)自該反應室吹淨該含鋁前驅物一段時間,此段時間不足以自氣相移除實質上所有的該含鋁前驅物;(c)將該基板暴露至一含氮前驅物一段時間,此段時間足以驅動一熱媒反應而在該基板之該表面上形成一氮化鋁層,其中該氮化鋁層實質上對該基板具有保形性且具有約1.5Å或更高的厚度;(d)自該反應室吹淨氣相之該含氮前驅物;及(e)重覆步驟(a)至(d)。
- 如申請專利範圍第1項之在反應室中處理具有特徵部之半導體基板的方法,其中該氮化鋁層具有至少約80%的階梯覆蓋率。
- 如申請專利範圍第1項之在反應室中處理具有特徵部之半導體基板的方法,其中該基板係在約250℃至約450℃間的一處理溫度下受到處理。
- 如申請專利範圍第1項之在反應室中處理具有特徵部之半導體基板的方法,其中該基板係在約0.01Torr至約10Torr間的一壓力下受到處理。
- 如申請專利範圍第1-4項中任一項之在反應室中處理具有特徵部之半導體基板的方法,其中該含鋁前驅物為三甲基鋁(TMA)。
- 如申請專利範圍第1-4項中任一項之在反應室中處理具有特徵部之半導體基板的方法,其中該含氮前驅物為氨氣(NH3)。
- 如申請專利範圍第1-4項中任一項之在反應室中處理具有特徵部之半導體基板的方法,其中吹淨該含鋁前驅物之步驟更包含流動氮氣(N2),且吹淨該含氮前驅物之步驟更包含流動氮氣(N2)。
- 如申請專利範圍第1-4項中任一項之在反應室中處理具有特徵部之半導體基板的方法,其中吹淨該含鋁前驅物約2秒。
- 如申請專利範圍第1-4項中任一項之在反應室中處理具有特徵部之半導體基板的方法,其中該基板被暴露至該含鋁前驅物約7.5秒至約30秒。
- 如申請專利範圍第1-4項中任一項之在反應室中處理具有特徵部之半導體基板的方法,其中該基板被暴露至該含鋁前驅物的時間與該含鋁前驅物受到吹淨的時間的比值係介於約3.75:1至約15:1之間。
- 如申請專利範圍第1-4項中任一項之在反應室中處理具有特徵部之半導體基板的方法,其中該處理實質上不會造成圖案負載效應。
- 如申請專利範圍第1-4項中任一項之在反應室中處理具有特徵部之半導體基板的方法,其中在步驟(a)至(d)之一循環期間所沈積之氮化鋁的量至少約為2Å。
- 如申請專利範圍第1-4項中任一項之在反應室中處理具有特徵部之半導體基板的方法,其中在步驟(a)至(d)之一循環期間所沈積之氮化鋁的量至少約為5Å。
- 如申請專利範圍第1-4項中任一項之在反應室中處理具有特徵部之半導體基板的方法,其中該基板的該特徵部具有至少約2:1的深寬比。
- 如申請專利範圍第1-4項中任一項之在反應室中處理具有特徵部之半導體基板的方法,其中該基板的該特徵部具有小於約100nm的開口。
- 一種用以在基板表面沈積薄膜的設備,此設備包含:一反應室,包含用以支撐基板的一平臺; 至少一出口,用以耦合至一真空;一或多個製程氣體入口,耦合至兩或更多前驅物源;及一控制器,用以控制該設備中的操作,此控制器包含用於下列操作之機器可讀指令:(a)將一第一前驅物導入該反應室中一段時間,此段時間足以使該第一前驅物實質上吸附至該基板的一表面;(b)致使吹淨該反應室一段時間,此段時間不足以自氣相移除實質上所有的該第一前驅物;(c)將一第二前驅物導入至該反應室中一段時間,此段時間足以在該基板表面形成具有約1.5Å或更高的厚度之一膜層;(d)致使吹淨該反應室一段時間,此段時間足以自氣相移除該第二前驅物;及(e)重覆步驟(a)至(d)。
- 如申請專利範圍第16項之用以在基板表面沈積薄膜的設備,其中該控制器更包含用於下列操作的指令:進行操作(a)的時間為進行操作(b)的時間之約3.75至約15倍。
- 如申請專利範圍第16及17項中任一項之用以在基板表面沈積薄膜的設備,其中導入該第一前驅物之操作包含自該第一前驅物的一儲槽的頂部空間抽取該第一前驅物至該反應室。
- 如申請專利範圍第18項之用以在基板表面沈積薄膜的設備,其中導入該第一前驅物之操作更包含在自該頂部空間抽取該第一前驅物的下游與該反應室的上游使一載氣與該第一前驅物一起流動。
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KR101701024B1 (ko) | 2017-01-31 |
TW201544619A (zh) | 2015-12-01 |
KR20150097410A (ko) | 2015-08-26 |
SG10201501134UA (en) | 2015-09-29 |
US9214334B2 (en) | 2015-12-15 |
CN104851796B (zh) | 2017-10-24 |
US20150235835A1 (en) | 2015-08-20 |
JP6038975B2 (ja) | 2016-12-07 |
JP2015159282A (ja) | 2015-09-03 |
SG10201606551TA (en) | 2016-09-29 |
US20160064211A1 (en) | 2016-03-03 |
CN104851796A (zh) | 2015-08-19 |
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