TWI590476B - Image sensor and fabricating method thereof - Google Patents
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本發明有關於影像感測技術領域，且特別是有關於一種背面製程的影像感測裝置及其製作方法。 The present invention relates to the field of image sensing technology, and in particular to an image sensing device for a back surface process and a method of fabricating the same.
隨著數位相機、電子掃瞄產品不斷地開發與成長，市場上對影像感測元件之需求隨之持續增加，目前常用的影像感測元件包含有電荷耦合感測元件(charge coupled device，CCD sensor)以及互補式金氧半導體影像感測元件(complementary metal oxide semiconductor，CMOS image sensor，CIS)兩大類。而CMOS影像感測元件因具有低操作電壓、低功率消耗與高操作效率、並可根據需要進行隨機存取(random access)等優點，以及可整合於目前的半導體技術來大量製造之優勢，因此受到極廣泛的應用。 With the continuous development and growth of digital cameras and electronic scanning products, the demand for image sensing components continues to increase in the market. Currently, commonly used image sensing components include charge coupled devices (CCD sensors). And complementary metal oxide semiconductor (CMOS image sensor, CIS). The CMOS image sensing device has the advantages of low operating voltage, low power consumption, high operating efficiency, random access as needed, and the advantages of mass production that can be integrated into current semiconductor technologies. Widely used.
CMOS影像感測器之感光原理係將入射之光線區分為各種不同波長光線的組合，例如入射光係被區分為紅、藍、綠三色光線之組合，再分別由半導體基底上之複數個光學感測元件(optically sensitive element)如感光二極體(photodiode)予以接收，並將之轉換為不同強弱之數位訊號。由此可知，各光學感測元件上方必須形成一彩色濾光陣列以區分入射 光線之波長。 The sensitization principle of the CMOS image sensor is to distinguish the incident light into a combination of different wavelengths of light. For example, the incident light system is divided into a combination of red, blue and green light, and then a plurality of opticals on the semiconductor substrate respectively. An optically sensitive element, such as a photodiode, receives it and converts it into a digital signal of different strengths and weaknesses. It can be seen that a color filter array must be formed above each optical sensing element to distinguish incident The wavelength of the light.
習知技術中，於影像感測裝置之金屬線路上製作一連接墊，以與外部的其他元件連接。該連接墊製作方法為，形成一開口曝露出該金屬線路，再於該開口內填入導電材質以以形成該連接墊。形成連接墊後，接著才形成彩色濾光層以及微透鏡等。如第1圖所示，第1圖繪示習知技術中影像感測裝置的局部結構剖面示意圖，一影像感測裝置10的表面有一介電層12覆蓋一金屬線路14，接著形成一開口16曝露金屬線路14，然後填入一導電層18於開口16內，以完成一連接墊，並與外部的其他元件連接。其中可選擇性地形成一阻絕層21於該開口16之側壁，利用屏蔽效應避免連接墊影響周圍其他元件。 In the prior art, a connection pad is formed on the metal line of the image sensing device to be connected to other external components. The connection pad is formed by forming an opening to expose the metal line, and filling the opening with a conductive material to form the connection pad. After the connection pads are formed, color filter layers, microlenses, and the like are formed. As shown in FIG. 1 , FIG. 1 is a cross-sectional view showing a partial structure of an image sensing device in a prior art. A surface of a image sensing device 10 has a dielectric layer 12 covering a metal line 14 and then forming an opening 16 . The metal line 14 is exposed and then filled into a conductive layer 18 in the opening 16 to complete a connection pad and connect to other external components. A barrier layer 21 can be selectively formed on the sidewall of the opening 16 to prevent the connection pads from affecting other surrounding components by using a shielding effect.
接著以旋轉塗佈(spin coating)方法於介電層12上形成複數個彩色濾光片36。然後依序於彩色濾光片36表面形成一平坦層38，以及複數個分別對應於彩色濾光片36之微透鏡(micro-lenses)40。然而上述製程有一問題存在，製作各彩色濾光片36的過程中，開口16之存在會使得各彩色濾光層於旋轉塗佈時積存於開口16內並飛濺於開口16之外，影響後續形成之彩色濾光片36，使彩色濾光片36之厚度不均勻，即產生箭影(striation)之情形，更可能影響像素表現(pixel performance)，例如影響色彩飽和度(saturation)等。 A plurality of color filters 36 are then formed on the dielectric layer 12 by spin coating. Then, a flat layer 38 is formed on the surface of the color filter 36, and a plurality of micro-lenses 40 respectively corresponding to the color filters 36 are formed. However, there is a problem in the above process. During the process of fabricating the color filters 36, the presence of the openings 16 causes the color filter layers to accumulate in the opening 16 during spin coating and splash outside the opening 16, which affects subsequent formation. The color filter 36 causes the thickness of the color filter 36 to be non-uniform, that is, a striation is generated, which is more likely to affect pixel performance, such as affecting color saturation.
因此，本發明於此提供一種影像感測裝置之製作方法，以改善習知技術中因製作彩色濾光片時箭影之產生，而影響影像感測裝置像素表現之缺點。 Therefore, the present invention provides a method for fabricating an image sensing device to improve the disadvantages of the image sensing device pixel performance caused by the generation of arrow shadows in the prior art when the color filter is produced.
本發明係提供一種影像感測裝置，至少包含有一定義有一感測器陣列區(sensor array region)與一周邊區之基底，一第一金屬層，位於該正面上的該周邊區內，一連接墊，位於該背面上的該周邊區內，以及至少一連接件，貫穿該基底且直接接觸該第一金屬層與該連接墊。其中該連接墊與該第一金屬層之間有部分之該基底存在。 The present invention provides an image sensing device comprising at least a substrate defining a sensor array region and a peripheral region, a first metal layer, the peripheral region on the front surface, and a connection pad , in the peripheral region on the back surface, and at least one connecting member extending through the substrate and directly contacting the first metal layer and the connecting pad. Wherein a portion of the substrate between the connection pad and the first metal layer is present.
本發明更提供一種影像感測裝置之製作方法。首先提供一定義有一感測器陣列區與一周邊區之基底。隨後形成一第一金屬層於該正面的該周邊區內，接著形成至少一開口並貫穿該基底，而後形成一導電層於該背面以及該開口中，其中，位於該開口中的該導電層形成一連接件，然後圖案化該導電層，以形成一連接墊，再形成複數個彩色濾光片於該背面的該感測器陣列區內，並形成一平坦層覆蓋各該彩色濾光片，最後形成複數個微透鏡於該平坦層表面。 The invention further provides a method for fabricating an image sensing device. First, a substrate defining a sensor array region and a peripheral region is provided. Forming a first metal layer in the peripheral region of the front surface, then forming at least one opening and penetrating the substrate, and then forming a conductive layer in the back surface and the opening, wherein the conductive layer is formed in the opening a connecting member, then patterning the conductive layer to form a connection pad, forming a plurality of color filters in the sensor array region of the back surface, and forming a flat layer covering each of the color filters, Finally, a plurality of microlenses are formed on the surface of the flat layer.
根據本發明所提供之影像感測裝置，連接墊係形成於基底之背面上，且連接墊與第一金屬層之間有基底存在，因此在連接墊完成後，基底的背面不會產生一開口，進而避免產 生箭影之情況，增進影像感測裝置的品質。 According to the image sensing device of the present invention, the connection pad is formed on the back surface of the substrate, and a substrate exists between the connection pad and the first metal layer, so that an opening is not generated on the back surface of the substrate after the connection pad is completed. And avoid production In the case of the arrow shadow, the quality of the image sensing device is improved.
為使熟習本發明所屬技術領域之一般技藝者能更進一步了解本發明，下文特列舉本發明之較佳實施例，並配合所附圖式，詳細說明本發明的構成內容及所欲達成之功效。 The present invention will be further understood by those of ordinary skill in the art to which the present invention pertains. .
為了方便說明，本發明之各圖式僅為示意以更容易了解本發明，其詳細的比例可依照設計的需求進行調整。在文中所描述對於圖形中相對元件之上下關係，在本領域之人皆應能理解其係指物件之相對位置而言，因此皆可以翻轉而呈現相同之構件，此皆應同屬本說明書所揭露之範圍，在此容先敘明。 For the convenience of description, the drawings of the present invention are only for the purpose of understanding the present invention, and the detailed proportions thereof can be adjusted according to the design requirements. As described in the text for the relative relationship between the relative elements in the figure, it should be understood by those skilled in the art that it refers to the relative position of the object, and therefore can be flipped to present the same member, which should belong to the same specification. The scope of the disclosure is hereby stated.
請參閱第2~7圖，第2~7圖繪示了本發明較佳實施例之影像感測裝置的製程示意圖。如第2圖所示，首先提供一基底52，基底52上定義有一感測器陣列區(sensor array region)54與一周邊區56。基底52之一正面53的感測器陣列區54內形成有複數個用來收集光線的感光二極體58、複數個電晶體(圖未示)、以及複數個設置於感光二極體58周圍之絕緣體(insulator)如淺溝隔離(STI)60。隨後於基底52之正面53上形成至少一層間介電層62，並於層間介電層62中形成複數個所需的接觸插塞(contact plug)(圖未示)。 Please refer to FIGS. 2-7, and FIGS. 2-7 are schematic diagrams showing the process of the image sensing device according to the preferred embodiment of the present invention. As shown in FIG. 2, a substrate 52 is first provided, and a sensor array region 54 and a peripheral region 56 are defined on the substrate 52. A plurality of photodiodes 58 for collecting light, a plurality of transistors (not shown), and a plurality of electrodes disposed around the photodiode 58 are formed in the sensor array region 54 of the front surface 53 of one of the substrates 52. An insulator such as shallow trench isolation (STI) 60. At least one interlayer dielectric layer 62 is then formed on the front side 53 of the substrate 52, and a plurality of desired contact plugs (not shown) are formed in the interlayer dielectric layer 62.
請參閱第3圖。接下來進行至少一金屬內連線製程，形成一介電層69於層間介電層62上，以及一第一金屬層64位於介電層69之中，另外形成複數個介層插塞(via plug)66位於第一金屬層64上，作為與影像感測裝置中其他元件相連的通路，以及形成複數條金屬線路70及複數個介層插塞(圖未示)於感測器陣列區54內的介電層69之中。此外，介電層69可為多層堆疊結構，各介電層之間結構相似，包括有一金屬層68，複數個介層插塞66以及複數條金屬線路70。其中值得注意的是，金屬內連線最底層的第一金屬層64係位於層間介電層62上且直接接觸層間介電層62。 Please refer to Figure 3. Next, at least one metal interconnect process is performed to form a dielectric layer 69 on the interlayer dielectric layer 62, and a first metal layer 64 is disposed in the dielectric layer 69, and a plurality of via plugs are formed. The plug 66 is located on the first metal layer 64 as a via connected to other components in the image sensing device, and forms a plurality of metal lines 70 and a plurality of via plugs (not shown) in the sensor array region 54. Inside the dielectric layer 69. In addition, the dielectric layer 69 can be a multi-layer stack structure, and the dielectric layers are similar in structure, including a metal layer 68, a plurality of via plugs 66, and a plurality of metal lines 70. It is worth noting that the first metal layer 64 of the bottommost layer of the metal interconnect is on the interlayer dielectric layer 62 and directly contacts the interlayer dielectric layer 62.
接著翻轉基底52，並由基底52之一背面55對基底52進行一薄化製程。然後如第4圖所示，形成一遮罩層72於基底52之一背面55上，遮罩層72材質包括氮化矽(SiN)或氧化矽(SiO2)等，但不限於此。接著形成至少一開口74，其中開口74貫穿遮罩層72、基底52以及層間介電層62，而曝露出第一金屬層64。此外，本發明另包括形成複數個深溝渠隔離(DTI)71，各深溝渠隔離71環繞於開口74周圍的基底52內。其中，本發明並不限制深溝渠隔離71形成的時間點與方法，例如，深溝渠隔離71可伴隨淺溝隔離60的製程一起、或是在淺溝隔離60之前或之後形成在基底52的正面53，亦或者是在基底52薄化後，由基底52的背面55形成。 深溝渠隔離71材質包括各種絕緣材質或導電材質，以有效隔離、屏壁感測器陣列區54內的連接墊(於後續步驟完成)之電性干擾，且當深溝渠隔離71包含有導電材質時，深溝渠隔離71應為一浮接結構(floating)，且與連接墊電性隔離。 The substrate 52 is then flipped over and a thinning process is performed on the substrate 52 from the back side 55 of one of the substrates 52. Then, as shown in FIG. 4, a mask layer 72 is formed on one of the back surfaces 55 of the substrate 52. The material of the mask layer 72 includes tantalum nitride (SiN) or yttrium oxide (SiO2), etc., but is not limited thereto. At least one opening 74 is then formed, wherein the opening 74 extends through the mask layer 72, the substrate 52, and the interlayer dielectric layer 62 to expose the first metal layer 64. In addition, the present invention further includes forming a plurality of deep trench isolations (DTIs) 71, each of which surrounds the substrate 52 around the opening 74. Wherein, the present invention does not limit the time point and method for forming the deep trench isolation 71. For example, the deep trench isolation 71 may be formed on the front side of the substrate 52 together with the process of the shallow trench isolation 60 or before or after the shallow trench isolation 60. 53, or alternatively, after the substrate 52 is thinned, it is formed by the back surface 55 of the substrate 52. The deep trench isolation 71 material comprises various insulating materials or conductive materials to effectively isolate the electrical interference of the connection pads in the panel sensor array area 54 (completed in subsequent steps), and when the deep trench isolation 71 comprises a conductive material The deep trench isolation 71 should be a floating structure and electrically isolated from the connection pads.
接著，如第5圖所示，形成一導電層76於基底52之背面55上，覆蓋遮罩層72並同時填滿開口74，其中位於開口74中的導電層76係形成一連接件78。然後利用一圖案化光阻(圖未示)當作遮罩來進行一蝕刻製程，以圖案化導電層76而於遮罩層72上形成一連接墊80。其中值得注意的是，連接件78與連接墊80係為一體成型結構，因此材質相同，另外，本實施例之連接件78僅包含一單層的導電層76，且連接件78與基底52實質上接觸，換句話說，連接件78並非由多層金屬層所組成，僅有導電層76位於開口74內且直接接觸基底52。其中導電層76材質可包括鋁、鋁銅合金或鋁矽銅合金等，但不限於此。 Next, as shown in FIG. 5, a conductive layer 76 is formed on the back surface 55 of the substrate 52, covering the mask layer 72 while filling the opening 74, wherein the conductive layer 76 in the opening 74 forms a connector 78. Then, an etching process is performed using a patterned photoresist (not shown) as a mask to pattern the conductive layer 76 to form a connection pad 80 on the mask layer 72. It should be noted that the connecting member 78 and the connecting pad 80 are integrally formed, and therefore the materials are the same. In addition, the connecting member 78 of the embodiment only includes a single conductive layer 76, and the connecting member 78 and the base 52 are substantially The upper contact, in other words, the connector 78 is not comprised of multiple layers of metal, only the conductive layer 76 is located within the opening 74 and directly contacts the substrate 52. The material of the conductive layer 76 may include aluminum, aluminum copper alloy or aluminum beryllium copper alloy, etc., but is not limited thereto.
如第6圖所示，形成複數個彩色濾光片82於感測器陣列區54之遮罩層72上。而形成該等彩色濾光片之步驟可歸納如下：首先進行進行一第一旋轉塗佈(spin coating)製程，以於遮罩層72表面形成一具有第一色系(例如為藍色)的第一彩色濾光層(圖未示)，再利用一具有第一彩色濾光片圖案之光罩(圖未示)對第一彩色濾光層進行一第一圖案轉移步 驟，以於感測器陣列區54之遮罩層72上形成至少一第一彩色濾光片。接下來以同樣方法分別製作具有第二色系(例如為綠色)的第二彩色濾光片與具有第三色系(例如為紅色)的第三彩色濾光片或者是更多其他色系的彩色濾光片，完成彩色濾光陣列。此後，再利用沉積與蝕刻等製程，於彩色濾光片82上形成一平坦層84，並於平坦層84表面形成複數個微透鏡86、以及一選擇性之保護層(圖未示)，即完成本發明之影像感測裝置1。 As shown in FIG. 6, a plurality of color filters 82 are formed on the mask layer 72 of the sensor array region 54. The steps of forming the color filters can be summarized as follows: First, a first spin coating process is performed to form a first color system (for example, blue) on the surface of the mask layer 72. a first color filter layer (not shown), and performing a first pattern transfer step on the first color filter layer by using a photomask (not shown) having a first color filter pattern At least one first color filter is formed on the mask layer 72 of the sensor array region 54. Next, a second color filter having a second color system (for example, green) and a third color filter having a third color system (for example, red) or more other color systems are separately produced in the same manner. A color filter completes the color filter array. Thereafter, a flat layer 84 is formed on the color filter 82 by a process such as deposition and etching, and a plurality of microlenses 86 and a selective protective layer (not shown) are formed on the surface of the flat layer 84, that is, The image sensing device 1 of the present invention is completed.
本發明的特色在於，連接墊80製作於基底52之背面55上，藉由連接件78，貫穿基底52與層間介電層62而與第一金屬層64接觸，也就是說，在連接墊80與第一金屬層64之間有基底52與層間介電層62存在，而且連接件78亦直接接觸基底52，沒有阻障層或介電層存在。藉此，當連接墊80製作完成之後，不會留下一開口於基底52上。如此可避免旋轉塗佈製作彩色濾光片時，因開口導致基底存在一凹陷，而產生箭影的問題。 The invention is characterized in that the connection pad 80 is formed on the back surface 55 of the substrate 52, and is connected to the first metal layer 64 through the substrate 52 and the interlayer dielectric layer 62 by the connecting member 78, that is, at the connection pad 80. There is a substrate 52 and an interlayer dielectric layer 62 between the first metal layer 64, and the connecting member 78 also directly contacts the substrate 52, and no barrier layer or dielectric layer exists. Thereby, after the connection pad 80 is completed, an opening is not left on the substrate 52. In this way, when the color filter is produced by spin coating, there is a problem that the substrate has a depression due to the opening, and an arrow shadow is generated.
另一個本發明的特色在於深溝渠隔離71的製作。本發明的阻絕層(深溝渠隔離71)與連接件78並不形成於同一開口內，深溝渠隔離71係位於連接件78周圍基底52內並環繞連接墊80與所有的連接件78，也就是說，本發明的深溝渠隔離71代替了先前技術中，位於開口16內部的阻絕層21(如 第1圖所示)，可屏蔽連接墊80與連接件78，同時可避免連接件78形成過程中，開口受到多次蝕刻而被破壞。 Another feature of the invention resides in the fabrication of deep trench isolation 71. The barrier layer (deep trench isolation 71) of the present invention and the connector 78 are not formed in the same opening. The deep trench isolation 71 is located in the substrate 52 around the connector 78 and surrounds the connection pad 80 and all the connectors 78, that is, It is said that the deep trench isolation 71 of the present invention replaces the barrier layer 21 located inside the opening 16 in the prior art (e.g. As shown in Fig. 1, the connection pad 80 and the connector 78 can be shielded, and at the same time, the opening of the connector 78 can be prevented from being damaged by multiple etchings.
值得注意的是，本發明中，各連接件為具有不同排列方式，第7圖為第6圖中沿著剖面線I-I’所得之相對應的底視圖，如第7圖所示，各連接件78均為柱狀並沿著第一金屬層64的內圍呈現環型排列，而深溝渠隔離71則係環繞連接墊(圖未示)與所有的連接件78。本實施例中，各個連接件78橫截面呈現方型，側邊長度較佳介於1.5μm~3μm，而連接墊80側邊長度較佳介於30μm~100μm。此外，本發明第一較佳實施例的另外數種實施態樣如第8~10圖所示，分別繪示了連接件的不同排列方式，如第8圖所示，各連接件88亦均為柱狀且呈現多圈環型排列。如第9圖所示，連接件90為一整體環形結構，或是如第10圖所示，連接件92為一整體環形結構且呈多圈排列。當然，本發明的連接件排列方式並不限於上述的各實施態樣，也可為其他任意形狀。 It should be noted that, in the present invention, each connector has a different arrangement, and FIG. 7 is a corresponding bottom view taken along line I-I' in FIG. 6, as shown in FIG. The connectors 78 are all columnar and appear in a ring arrangement along the inner circumference of the first metal layer 64, while the deep trench isolation 71 surrounds the connection pads (not shown) and all of the connectors 78. In this embodiment, each of the connecting members 78 has a square shape in cross section, and the length of the side is preferably between 1.5 μm and 3 μm, and the length of the side of the connecting mat 80 is preferably between 30 μm and 100 μm. In addition, in another embodiment of the first preferred embodiment of the present invention, as shown in FIGS. 8-10, different arrangements of the connecting members are respectively illustrated. As shown in FIG. 8, each connecting member 88 is also It is columnar and presents a multi-ring ring arrangement. As shown in Fig. 9, the connecting member 90 is a unitary annular structure, or as shown in Fig. 10, the connecting member 92 is a unitary annular structure and arranged in a plurality of turns. Of course, the arrangement of the connectors of the present invention is not limited to the above-described embodiments, and may be any other shape.
綜上所述，根據本發明所提供影像感測裝置與製作方法，基底背面製作連接墊時，連接墊與第一金屬層之間存在有部分之基底與部分之層間介電層，而不會產生一凹陷或一開口。因此在旋轉塗佈彩色濾光層時，便不會因凹陷或開口之存在，使得彩色濾光層於旋轉塗佈時積存於開口內，故可避免箭影之產生。此外，本發明在連接墊周圍的基底中包含 有複數個深溝渠隔離，由於深溝渠隔離與連接件製作於不同的開口中，因此製作深溝渠隔離時，並不會對連接件與連接墊造成破壞，進而可改善影像感測裝置的表現。 In summary, according to the image sensing device and the manufacturing method of the present invention, when the connection pad is fabricated on the back surface of the substrate, a portion of the substrate and a portion of the interlayer dielectric layer are present between the connection pad and the first metal layer, and A depression or an opening is created. Therefore, when the color filter layer is spin-coated, the color filter layer is not accumulated in the opening during spin coating due to the presence of the recess or the opening, so that the generation of the arrow shadow can be avoided. Furthermore, the invention comprises in the substrate around the connection pad There are a plurality of deep trench isolations. Since the deep trench isolation and the connecting members are formed in different openings, the separation of the deep trenches does not cause damage to the connecting members and the connecting pads, thereby improving the performance of the image sensing device.
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
1‧‧‧影像感測裝置 1‧‧‧Image sensing device
10‧‧‧影像感測裝置 10‧‧‧Image sensing device
12‧‧‧介電層 12‧‧‧Dielectric layer
14‧‧‧金屬線路 14‧‧‧Metal lines
16‧‧‧開口 16‧‧‧ openings
18‧‧‧導電層 18‧‧‧ Conductive layer
21‧‧‧阻絕層 21‧‧‧The barrier layer
36‧‧‧彩色濾光片 36‧‧‧Color filters
38‧‧‧平坦層 38‧‧‧flat layer
40‧‧‧微透鏡 40‧‧‧Microlens
52‧‧‧基底 52‧‧‧Base
53‧‧‧正面 53‧‧‧ positive
54‧‧‧感測器陣列區 54‧‧‧Sensor array area
55‧‧‧背面 55‧‧‧Back
56‧‧‧周邊區 56‧‧‧The surrounding area
58‧‧‧感光二極體 58‧‧‧Photosensitive diode
60‧‧‧淺溝隔離 60‧‧‧Shallow trench isolation
62‧‧‧層問介電層 62‧‧‧ layer of dielectric layer
64‧‧‧第一金屬層 64‧‧‧First metal layer
66‧‧‧介層插塞 66‧‧‧Interlayer plug
68‧‧‧金屬層 68‧‧‧metal layer
69‧‧‧介電層 69‧‧‧Dielectric layer
70‧‧‧金屬線路 70‧‧‧Metal lines
71‧‧‧深溝渠隔離 71‧‧‧Deep trench isolation
72‧‧‧遮罩層 72‧‧‧mask layer
74‧‧‧開口 74‧‧‧ openings
76‧‧‧導電層 76‧‧‧ Conductive layer
78‧‧‧連接件 78‧‧‧Connecting parts
80‧‧‧連接墊 80‧‧‧Connecting mat
82‧‧‧彩色濾光片 82‧‧‧Color filters
84‧‧‧平坦層 84‧‧‧flat layer
86‧‧‧微透鏡 86‧‧‧Microlens
88‧‧‧連接件 88‧‧‧Connecting parts
90‧‧‧連接件 90‧‧‧Connecting parts
92‧‧‧連接件 92‧‧‧Connecting parts
第1圖係為一習知之影像感測裝置之結構局部剖面示意圖。 Figure 1 is a partial cross-sectional view showing the structure of a conventional image sensing device.
第2圖至第6圖係為本發明所提供之影像感測裝置之第一較佳實施例。 2 to 6 are first preferred embodiments of the image sensing device provided by the present invention.
第7圖係為本發明所第一較佳實施例的第6圖中沿剖面I-I’所得之底視圖。 Fig. 7 is a bottom view taken along section I-I' of Fig. 6 of the first preferred embodiment of the present invention.
第8圖至第10圖係為本發明所提供之影像感測裝置之另外三種實施態樣之底視圖。 8 to 10 are bottom views of three other embodiments of the image sensing device provided by the present invention.
1‧‧‧影像感測裝置 1‧‧‧Image sensing device
52‧‧‧基底 52‧‧‧Base
53‧‧‧正面 53‧‧‧ positive
54‧‧‧感測器陣列區 54‧‧‧Sensor array area
56‧‧‧周邊區 56‧‧‧The surrounding area
58‧‧‧感光二極體 58‧‧‧Photosensitive diode
60‧‧‧淺溝隔離 60‧‧‧Shallow trench isolation
62‧‧‧層間介電層 62‧‧‧Interlayer dielectric layer
64‧‧‧第一金屬層 64‧‧‧First metal layer
66‧‧‧接觸插塞 66‧‧‧Contact plug
68‧‧‧金屬層 68‧‧‧metal layer
69‧‧‧介電層 69‧‧‧Dielectric layer
70‧‧‧金屬線路 70‧‧‧Metal lines
71‧‧‧深溝渠隔離 71‧‧‧Deep trench isolation
72‧‧‧遮罩層 72‧‧‧mask layer
76‧‧‧導電層 76‧‧‧ Conductive layer
78‧‧‧連接件 78‧‧‧Connecting parts
80‧‧‧連接墊 80‧‧‧Connecting mat
82‧‧‧彩色濾光片 82‧‧‧Color filters
84‧‧‧平坦層 84‧‧‧flat layer
86‧‧‧微透鏡 86‧‧‧Microlens
Claims (18)
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| TW101124968A TWI590476B (en) | 2012-07-11 | 2012-07-11 | Image sensor and fabricating method thereof |
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