TWI567220B - Capture device and film forming device - Google Patents
Capture device and film forming device Download PDFInfo
- Publication number
- TWI567220B TWI567220B TW102109403A TW102109403A TWI567220B TW I567220 B TWI567220 B TW I567220B TW 102109403 A TW102109403 A TW 102109403A TW 102109403 A TW102109403 A TW 102109403A TW I567220 B TWI567220 B TW I567220B
- Authority
- TW
- Taiwan
- Prior art keywords
- collecting
- exhaust gas
- gas
- exhaust
- plates
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 39
- 238000012545 processing Methods 0.000 claims description 34
- 238000001816 cooling Methods 0.000 claims description 16
- 238000011144 upstream manufacturing Methods 0.000 claims description 16
- 230000007423 decrease Effects 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- 238000005192 partition Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 187
- 239000002994 raw material Substances 0.000 description 56
- 239000012159 carrier gas Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 12
- 239000007787 solid Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000011084 recovery Methods 0.000 description 10
- 239000006227 byproduct Substances 0.000 description 9
- 238000005755 formation reaction Methods 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 150000002902 organometallic compounds Chemical class 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 238000001784 detoxification Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- RDMHXWZYVFGYSF-LNTINUHCSA-N (z)-4-hydroxypent-3-en-2-one;manganese Chemical compound [Mn].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O RDMHXWZYVFGYSF-LNTINUHCSA-N 0.000 description 1
- VNNDVNZCGCCIPA-FDGPNNRMSA-N (z)-4-hydroxypent-3-en-2-one;manganese Chemical compound [Mn].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O VNNDVNZCGCCIPA-FDGPNNRMSA-N 0.000 description 1
- IANXAXNUNBAWBA-UHFFFAOYSA-N 2,2,3-trimethylundecane Chemical compound CCCCCCCCC(C)C(C)(C)C IANXAXNUNBAWBA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BZORFPDSXLZWJF-UHFFFAOYSA-N N,N-dimethyl-1,4-phenylenediamine Chemical compound CN(C)C1=CC=C(N)C=C1 BZORFPDSXLZWJF-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- -1 carbonyl organometallic compound Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- BFIMXCBKRLYJQO-UHFFFAOYSA-N ethanolate;hafnium(4+) Chemical compound [Hf+4].CC[O-].CC[O-].CC[O-].CC[O-] BFIMXCBKRLYJQO-UHFFFAOYSA-N 0.000 description 1
- LNKYFCABELSPAN-UHFFFAOYSA-N ethyl(methyl)azanide;titanium(4+) Chemical compound [Ti+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C LNKYFCABELSPAN-UHFFFAOYSA-N 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
- H01J37/32844—Treating effluent gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D8/00—Cold traps; Cold baffles
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F15—FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
- F15D—FLUID DYNAMICS, i.e. METHODS OR MEANS FOR INFLUENCING THE FLOW OF GASES OR LIQUIDS
- F15D1/00—Influencing flow of fluids
- F15D1/0005—Baffle plates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本發明係關於一種於被處理體形成薄膜之成膜裝置及應用於該成膜裝置的捕集裝置。
一般而言,為了形成IC等積體電路或邏輯元件,係於半導體晶圓、玻璃基板、LCD基板等表面處,重覆進行形成所欲薄膜的成膜製程或對其施以所欲圖樣的蝕刻製程。以該成膜製程為例,該製程中,於處理容器內使既定處理氣體(原料氣體)進行反應或分解,藉以在被處理體表面處形成矽薄膜、矽氧化物或氮化物薄膜、或金屬薄膜、金屬氧化物或氮化物薄膜等,但進行該成膜反應的同時會產生額外之反應副生成物,其將與排氣氣體一起被排出。又,亦會排出未反應處理氣體。
由於該反應副生成物或未反應處理氣體直接排放至大氣中會成為環境污染之原因,且排出未反應處理氣體亦造成資源浪費,故為防止此問題,一般而言,係從處理容器延伸形成之排氣氣體系統處介設有捕集機構,藉此捕獲並去除包含於排氣氣體中的反應副生成物或未反應處理氣體等(專利文獻1~4)。
對應欲捕獲去除之反應副生成物等的特性,而提出有各種該捕集機構之結構,但在例如常溫中以液化乃至固化而去除凝聚之反應副生成物的情況中,作為捕集結構之一例,其係在具有排氣氣體導入口與排出口之框體內設置有複數個板狀捕集板。接著,該捕集板係相對排氣氣體的流通方向上依序排列,當排氣氣體通過該等捕集板之間時,於捕集板表面吸附並捕獲排氣氣體中的反應副生成物或未反應處理氣體(原料氣體)等。該情況中,為了使前述板狀捕集板與流通之排氣氣體接觸良好,一般而言係設置
為使主捕集面相對排氣氣體流通方向呈正交。又,亦可藉由冷卻流體等冷卻該捕集板而提升捕獲效率。
專利文獻1:日本專利特開平10-140357號公報。
專利文獻2:日本專利特開平11-302851號公報。
專利文獻3:日本專利特開2001-214272號公報。
專利文獻4:日本專利特開2003-247075號公報。
然而,一般的捕集裝置中,為了如前述般使該捕集板與排氣氣體之間接觸良好,係將板狀之捕集板配置為使主捕集面相對排氣氣體流通方向而呈正交狀態。但是,該情況中,當實際排氣氣體與主捕集面衝撞時,該流動將會受到大幅擾動,結果將產生排氣氣體的亂流並使排氣氣體中的捕獲對象物不與捕集板接觸,即,將未被捕獲而流走,具有無法充份提升回收率的問題。
針對上述問題,提供一種可改善反應副生成物或未反應之原料氣體等捕獲對象物之回收率的捕集裝置及成膜裝置。
為解決上述問題,根據本發明之某樣態,係提供一種捕集裝置,係具備:框體,係介設在流通有來自處理容器之排氣氣體的排氣通道途中;以及捕集單元,係設置於該框體內,相對該排氣氣體流通方向而使主捕集面呈平行般配置,具有朝該排氣氣體流通方向之正交方向以相互隔著特定間隔而設置的複數個捕集板;其中沿該排氣氣體流通方向設置有複數個該捕集單元。
又,根據本發明其它樣態,提供一種成膜裝置,係施以使用原料氣體而於被處理體形成薄膜之成膜處理用的成膜裝置,具備:可真空排氣的處理容器;載置該被處理體的載置台;將氣體導入該處理容器內的氣體導入裝置;連接至該氣體導入裝置而具有供給該原料氣體之原料氣體供給系統的氣體供給系統;排出該處理容器內氣氛的排氣系統;以及設置於該排氣系統的捕集裝置;其中該捕集裝置,係具備:框體,係設置於該排氣系統中介設在流通排氣氣體的排氣通道途中;以及捕集單元,係設置於該框體內,相對該排氣氣體流通方向而使主捕集面呈平行般配置,具有朝該排氣
氣體流通方向之正交方向以相互隔著特定間隔而設置的複數個捕集板;其中沿該排氣氣體流通方向設置有複數個該捕集單元。
根據本發明,可改善反應副生成物或未反應原料氣體等捕獲對象物的回收率。
2‧‧‧成膜裝置
4‧‧‧成膜裝置本體
6‧‧‧氣體供給系統
8‧‧‧排氣系統
10‧‧‧原料氣體供給系統
12‧‧‧處理容器
14‧‧‧載置台
16‧‧‧支柱
18‧‧‧加熱器
20‧‧‧冷媒通道
22‧‧‧排氣口
24‧‧‧開口
26‧‧‧閘閥
28‧‧‧噴氣頭
28A‧‧‧氣體入口
30‧‧‧氣體導入裝置
32‧‧‧氣體噴出孔
34‧‧‧加熱部
36‧‧‧加熱部
40‧‧‧原料槽
42‧‧‧固體原料
44‧‧‧氣體出口
46‧‧‧原料通道
48‧‧‧開關閥
50‧‧‧載體氣體管
52‧‧‧流量控制器
54‧‧‧載體氣體開關閥
56‧‧‧多孔板
58‧‧‧槽加熱機構
60‧‧‧通道加熱器
62‧‧‧排氣通道
64‧‧‧壓力調節閥
66‧‧‧第1真空幫浦
68‧‧‧捕集裝置
70‧‧‧第2真空幫浦
72‧‧‧無害化裝置
74‧‧‧框體
76‧‧‧氣體入口
78‧‧‧氣體出口
80‧‧‧開關蓋
82‧‧‧密封組件
84‧‧‧捕集板
84-1‧‧‧捕集板
84-2‧‧‧捕集板
84-3‧‧‧捕集板
84-4‧‧‧捕集板
86‧‧‧捕集單元
86-1‧‧‧捕集單元
86-2‧‧‧捕集單元
86-3‧‧‧捕集單元
86-4‧‧‧捕集單元
88‧‧‧支撐桿
90‧‧‧支撐環
92‧‧‧主捕集面
93‧‧‧副捕集面
96‧‧‧冷卻裝置
100‧‧‧通道加熱器
110‧‧‧捕集板
L1‧‧‧各捕集板厚度
L2‧‧‧排列間距
W‧‧‧晶圓
圖1係顯示具有本發明一實施形態的捕集裝置之成膜裝置一例的示意結構圖。
圖2係顯示一實施形態的捕集裝置的縱剖面圖。
圖3係顯示一實施形態的捕集裝置的橫剖面圖。
圖4係顯示一實施形態的1個捕集單元的立體圖。
圖5係顯示一實施形態的捕集裝置之各捕集板排列狀態的俯視剖面圖。
圖6係顯示從一實施形態的捕集裝置一端面對各捕集單元之捕集板時之狀態的示意投影圖。
圖7係顯示一般捕集裝置內排氣氣體流通的示意圖。
圖8係顯示一實施形態的捕集裝置內排氣氣體流通的示意圖。
以下,根據添附圖式來詳述本發明的捕集裝置及成膜裝置之較佳實施形態。圖1係顯示具有本發明一實施形態的捕集裝置之成膜裝置一例的示意結構圖,圖2係顯示一實施形態的捕集裝置的縱剖面圖,圖3係顯示一實施形態的捕集裝置的橫剖面圖,圖4係顯示一實施形態的1個捕集單元的立體圖,圖5顯示一實施形態的捕集裝置之各捕集板排列狀態的俯視剖面圖,圖6係顯示從一實施形態的捕集裝置一端面對各捕集單元之捕集板時狀態的示意投影圖。此處係以使用羰基有機金屬化合物之Ru3(CO)12作為有機金屬化合物原料,使用CO(一氧化碳)作為載體氣體並形成由Ru金屬膜所組成之薄膜,且從排氣氣體中捕獲作為捕獲對象物之未反應原料氣體的情況為例加以說明。
如圖1所示,本發明一實施形態之成膜裝置2主要由:實際上對作為被處理體之圓板狀半導體晶圓W(以下,稱為晶圓W)施以成膜處理的成
膜裝置本體4;對於該成膜裝置本體4供給必要氣體的氣體供給系統6;以及排出成膜裝置本體4之排氣氣體的排氣系統8所構成。氣體供給系統6於此例包含有供給成膜用原料氣體的原料氣體供給系統10,必要情況時,亦包含有供給N2氣體等沖洗氣體的沖洗氣體供給系統等。
首先,說明成膜裝置本體4。該成膜裝置本體4具有由例如鋁合金等所構成的筒體狀處理容器12。該處理容器12內設置有載置並保持為被處理體之晶圓W的載置台14。該載置台14整體形成為例如圓板狀,該上側面係載置晶圓W。接著,該載置台14係安裝固定於自處理容器12底部豎起之例如鋁合金等所構成的金屬製支柱16的上端部。
於該載置台14中,在其上部側埋設有作為加熱機構的例如鎢絲加熱器或碳絲加熱器等構成之加熱器18,而將晶圓W加熱,於加熱器18之下方處,設置有冷卻該載置台14下部或側部而讓調整溫度之冷媒流通用的冷媒通道20。又,於該載置台14處,設置有在晶圓W搬出入時昇降而與搬送臂之間進行晶圓W傳遞的昇降銷(未圖示)。
處理容器12之底部設置有排氣口22,該排氣口22處連接有排氣系統8,而能將處理容器12內氣氛進行真空排氣。該排氣系統8詳待後述。該處理容器12側壁處形成有晶圓W搬出入的開口24,該開口24處設置有使其氣密性地開閉用的閘閥26。
接著,該處理容器12之頂部處設置有例如噴氣頭28所組成的氣體導入裝置30,透過設置於下面之氣體噴出孔32將必要之氣體供給至處理容器12內。接著,處理容器12側壁或噴氣頭28處各自設置有加熱部34、36,藉由將該等維持於既定溫度,以防止原料氣體固化或液化。接著,於該噴氣頭28之氣體入口28A處係連接有原料氣體供給系統10,或當需要其它氣體時,則連接該氣體供給系統。
此處所使用之氣體種類,係可於該噴氣頭28內將原料氣體與其它氣體混合,亦可將其各自導入噴氣頭28內並各自流動而於處理容器12內加以混合。此處雖使用噴氣頭28作為氣體導入裝置30,但亦可僅使用噴嘴等來替代,其氣體導入形態並無特別限制。
其次,說明原料氣體供給系統10。首先,該原料氣體供給系統10具有儲存固體原料或液體原料的原料槽40。此處,該原料槽40內儲存有機金屬
化合物原料(例如固體原料42),該固體原料42係使用如前述之Ru3(CO)12。一般而言,該固體原料42具有蒸氣壓非常低而難以蒸發的特性。另外,亦可使用以氣泡化等形成原料氣體的液體原料來取代固體原料42。
接著,以將一端連接至設置於該原料槽40頂部的氣體出口44,並將另一端連接至成膜裝置本體4之噴氣頭28之氣體入口28A般,來設置原料通道46,而可供給於原料槽40處所產生的原料氣體。接著,將開關閥48介設於原料通道46之靠近原料槽40的部分。
又,於原料槽40之下面側處,連接有對原料槽40供給載體氣體用的載體氣體管50。在該載體氣體管50之中途依序介設有如質流控制器之流量控制器52與載體氣體開關閥54,藉由對載體氣體進行流量控制及供給而加熱固體原料42,使得該固體原料42氣化而形成原料氣體。
又,於原料槽40內部,係構成為在設置有載體氣體管50側的附近處設置有多孔板56,將固體原料42保持於多孔板56上,且自載體氣體管50供給的載體氣體會經由形成於多孔板56的孔部,而均勻地供給至原料槽40內的結構。此處係使用CO氣體(一氧化碳)作為前述載體氣體。
接著,原料槽40處係覆蓋原料槽整體般地設置有用以加熱原料槽的槽加熱機構58,以促進固體原料42之氣化。該情況中,固體原料42之加熱溫度係未達分解溫度且為固化溫度以上的溫度。又,原料通道46處設置有如加熱帶般之通道加熱器60,可將其加熱至未達分解溫度且固化溫度以上之溫度,以防止原料氣體再次固化。
其次,說明排氣系統8。該排氣系統8係具有連接至處理容器12之排氣口22的排氣通道62,而沿該排氣通道62將處理容器12內之氣氛排出。具體而言,該排氣通道62處係從其上游側朝向下游側而依序介設有壓力調節閥64、第1真空幫浦66、本發明一實施形態之捕集裝置68、第2真空幫浦70、及無害化裝置72。
壓力調節閥64係例如由蝶形閥所構成,具有調整處理容器12內壓力的功能。此處第1真空幫浦66係由設置於上游側的渦輪分子幫浦所構成,此處第2真空幫浦70則由乾式幫浦所構成,可將處理容器12內氣氛抽真空。該情況中,對應成膜時之設定製程壓力,亦可僅設置前述2個幫浦66、70中的任一者。
捕集裝置68係可將流入之排氣氣體中所包含的未反應原料氣體進行回收。具體而言,該捕集裝置68具有如圖2至圖6所示之例如不鏽鋼、鋁合金等金屬所形成的框體74。另外,在使用腐蝕性氣體作為處理氣體的情況中,係使用耐腐蝕性材料作為框體74。此處該框體74係形成兩端封閉的圓筒體狀。該圓筒體狀框體74之一端係形成氣體入口76,將排氣通道62上游側連接至該氣體入口76,其另一端則形成氣體出口78,將排氣通道62之下游側連接至該氣體出口78,而使排氣氣體於框體74內流通。
又,框體74之形成氣體出口78的另一端側端板係作為開關蓋80,該開關蓋80藉由O型環等密封組件82而可氣密性拆卸般地進行安裝。
接著,於該框體74內將為本發明一實施形態特徵之具有複數個捕集板84的複數個捕集單元86,沿排氣氣體流通方向以特定間隔進行設置,以捕獲排氣氣體中的捕獲對象物(原料氣體)。具體而言,此處捕集單元86係相互隔著適當間隔而設置8個(參考圖2),即,設置成8層,各捕集單元86係將一端連結至開關蓋80並藉由沿框體74內延伸之複數個支撐桿88連結成一體化來加以支撐,保養時可自框體74之開關蓋80側進行安裝/拆除。此處設置有3個支撐桿88(參考圖3)。接著,各捕集單元86處係各自設置有複數個捕集板84,此處係設置4個。另外,該捕集板84的數量並不限定於此。
各捕集板84係相對排氣氣體流通方向,即,框體74長邊方向而使主捕集面92(寬度較寬之捕集面)呈平行般配置,並朝排氣氣體流通方向之正交方向相互隔著特定間隔而進行設置。即,捕集板84厚度方向之副捕集面93(寬度較窄之捕集面)係配置成與排氣氣體流通方向正交。接著,該捕集單元86之外周緣側由呈圓形環狀的既定寬度之支撐環90所形成,將各捕集板84之兩端連接至該支撐環90而一體化地加以支撐。
此處,捕集板84剖面為矩形,具有既定厚度、長度及寬度,其表面整體係形成捕集面,且以長度與寬度所形成之面係成為主捕集面92。此處各捕集板84之長度係根據相對於如圖3及圖4所示之圓形環狀支撐環90的安裝位置而不同。該支撐環90之表面亦成為捕集面,具有吸附捕獲對象物的功能。
此處,前述各組件之尺寸一例係:框體74直徑約20cm,長度約40cm,
各捕集板84厚度L1約10~15mm,捕集板84間之距離,即,排列間距L2約20~40mm,寬度L3(參考圖5)約10~20mm,並設定成「厚度L1<長度L3」。在前述厚度L1較10mm更小的情況中,會設置過量的捕集板84,故非較佳設計,又,在較15mm更大的情況中,排氣氣體的亂流會增大,該情況亦非較佳設計。又,捕集單元86之間的前後距離約為例如40~80mm。
接著,本發明一實施形態中,捕集板84相對於圓形環狀支撐環90的安裝位置,係每塊捕集單元86各自相對排氣氣體流通方向之正交方向偏移少許距離。具體而言,如圖5所示,隨著排氣氣體流通方向上的捕集單元86之安裝位置每隔一層(個)偏移,捕集板84之安裝位置便例如朝向排氣氣體流通方向之正交方向上偏移捕集板84厚度的位置。接著,此處係設定為:相對於上游側的前4層捕集單元86之各捕集板84之氣體流通方向上的投影面總計,會覆蓋相對於排氣氣體流通方向呈正交之框體74剖面的幾乎整個剖面。該情況中,框體74內周面與支撐環90外周面之間會形成有少許間隙,且由於支撐環90自身亦具有板材厚度,故較佳地係設定為覆蓋框體74之剖面的95%以上。
又,關於圓形環狀支撐環90內之剖面,各捕集板84之投影面(副捕集面93)的總計係圖6所示的100%。即,如圖6所示之投影圖,將位於排氣氣體流通方向最上游側的捕集單元作為第1層之情況,依下列順序重覆排列:第1層的捕集單元86-1之捕集板84-1、第2層的捕集單元86-2之捕集板84-2、第3層的捕集單元86-3之捕集板84-3、及第4層的捕集單元86-4之捕集板84-4。
換言之,從排氣氣體流通方向觀察時,圓形環狀支撐環90內之剖面係呈100%光學性地遮蔽之狀態,即排氣氣體無法沿一直線般穿過框體74內的結構。此處從排氣氣體流通方向觀察的情況,相鄰的捕集板84之周邊部彼此亦可配置為有少許重合,亦或者有少許分離。另外,各層捕集單元86-1~86-4之各捕集板84-1~84-4的安裝位置亦可不依照上述規則正確安裝,又,亦可任意地互換各捕集單元86-1~86-4之前後方向的位置,無論如何,框體74內之剖面只要是呈光學性地95%以上,較佳地為100%遮蔽之狀態即可。
又,位於排氣氣體流通方向下游側之後4層捕集單元86所構成的組合結構係與上述前4層捕集單元86所構成的組合結構完全相同。此處雖係將4層捕集單元86所構成的組合沿前後般設置有2組,但該組合數量不限定於將框體74整體設為2組,亦可設置為1組或3組以上。
接著,於該框體74處設置冷卻各捕集板84用的冷卻裝置96(參考圖2)。具體而言,該冷卻裝置96具有於內部流通有冷卻水等冷媒的冷卻套管98,將該冷卻套管98安裝至為框體74之區隔壁的開關蓋80。藉此,便能透過該冷卻套管98來冷卻開關蓋80、支撐桿88、支撐環90、及各捕集板84。此處係將捕集板84冷卻至例如約25℃。該情況中,亦可在支撐桿88及支撐環90等形成冷媒通道,以更有效率地冷卻各捕集板84。又,在使用冷卻裝置96的情況中,可使用熱傳導性良好之材料(較佳地可使用例如鋁合金或鋁)來作為前述各構成組件。另外,依據捕獲對象物之種類,亦可不設置冷卻裝置96。
回到圖1,從處理容器12之排氣口22至該捕集裝置68為止的排氣通道62處設置有加熱帶等之通道加熱器100,藉此將流通於排氣通道62內之排氣氣體加熱至既定溫度,以防止排氣氣體中未反應原料氣體於途中液化或固化。
又,設置於第2真空幫浦70下游側的無害化裝置72可將排氣氣體中的有害氣體加以無害化,此處係將前述原料氣體分解而產生CO(一氧化碳),又,由於亦使用CO作為載體氣體,例如可將該CO加以燃燒,轉變成CO2(二氧化碳)而無害化並逸散至大氣中。
前述結構之成膜裝置2整體動作,例如氣體供給之開始、停止、製程溫度、製程壓力、流通於冷媒通道的冷媒之溫度控制、捕集裝置68之冷媒供給、冷媒循環等的控制係由例如電腦所構成之裝置控制部102所進行。
該控制所需之電腦可讀式程式係儲存於儲存媒體104,可使用軟碟、CD(Compact Disc)、CD-ROM、硬碟、快閃記憶體或DVD等作為該儲存媒體104。
其次,參考圖7及圖8說明使用如以上結構之成膜裝置2所進行的成膜動作及捕獲對象物之捕獲動作。圖7及圖8係捕集裝置內排氣氣體流通的示意圖,圖7係顯示一般捕集板的配置範例,圖8係顯示本發明一實施
形態之捕集板的配置範例。
首先,如圖1所示,於該成膜裝置2之成膜裝置本體4處,連續地驅動排氣系統8的第1真空幫浦66及第2真空幫浦70,將處理容器12內抽真空並維持於既定壓力,又,支撐於載置台14之晶圓W係藉由加熱器18維持於既定溫度。又,處理容器12側壁及噴氣頭28亦各自藉由加熱部34、36以維持於既定溫度。該溫度係未達原料氣體之分解溫度且為固化溫度或液化溫度以上的溫度範圍,例如各自加熱至約80℃。
又,氣體供給系統6之原料氣體供給系統10整體係藉由槽加熱機構58或通道加熱器60預先加熱至既定溫度,例如前述之約80℃。接著,開始進行成膜處理,於原料氣體供給系統10處,經由載體氣體管50以將受流量控制之載體氣體(CO)供給至原料槽40內,藉以將儲存於原料槽40內之固體原料42加熱並氣化,藉此產生原料氣體。
該產生之原料氣體係與載體氣體一同於原料通道46內朝下游側流動。該原料氣體係從作為成膜裝置本體4之氣體導入裝置30的噴氣頭28朝減壓氣氛的處理容器12內而導入,在該處理容器12內藉由例如CVD(Chemical Vapor Deposition)而在晶圓W上形成Ru金屬薄膜。此時之製程條件係:製程壓力約0.1Torr(13.3Pa),晶圓溫度為原料氣體之分解溫度以上,約例如150~250℃。
此處,固體原料42之Ru3(CO)12係蒸氣壓非常低而難以蒸發(氣化)的原料,又,能促進成膜反應的量會非常地少,約90%原料氣體係在未反應狀態下與載體氣體之CO一同流入排氣系統8的排氣通道62內。該排氣通道62亦透過通道加熱器100加熱至上述約80℃,防止原料氣體再次固化等,而維持於氣體狀態。透過前述成膜反應,產生與載體氣體相同氣體物種之CO(一氧化碳)。
流入排氣通道62之排氣氣體依序經過壓力調節閥64、第1真空幫浦66、捕集裝置68、第2真空幫浦70、及無害化裝置72後逸散至大氣中。該情況中,將未反應的原料氣體回收之後,由於僅殘留作為排氣氣體的CO氣體,該CO氣體便會藉由在無害化裝置72處進行燃燒,轉變成CO2而無害化並逸散至大氣。
於此,當排氣氣體經由捕集裝置68之氣體入口76流入至框體74內時,
該排氣氣體會透過與各捕集單元86之捕集板84接觸而受到冷卻,使包含於排氣氣體中的捕獲對象物(未反應原料氣體)進行凝聚(凝固),並吸附堆積於捕集面,以自排氣氣體中去除。接著,已被捕獲原料氣體的排氣氣體則經由氣體出口78朝排氣通道62下游側流出。
該情況中,一般捕集裝置中,由於如圖7所示,各捕集板110係將主捕集面相對排氣氣體流通方向呈正交般設置,故排氣氣體流動會產生亂流的狀態,其結果,會變成多數未反應原料氣體被捲入亂流而不會與捕集板110接觸便朝下游側流出的狀態,而有無法充份提升捕獲對象物之原料氣體回收率的情況。
對此,在本發明一實施形態之情況中,如圖8所示,框體74內各捕集板84係將主捕集面92相對排氣氣體流通方向呈平行般配置,且朝排氣氣體流通方向之正交方向以相互隔著特定間隔而設置,因此排氣氣體不會產生較大亂流,可使排氣氣體及原料氣體與各捕集板84有效率地進行接觸,而提升原料氣體之回收率。
該情況中,排氣氣體之流動係幾乎無擾動般來通過各捕集板84間之間隙,但各捕集板84,即,捕集單元86係沿排氣氣體流通方向上設置有複數層,接著,由於係設定為:相對於各捕集板84之排氣氣體流通方向上的投影面總計會覆蓋相對於框體74內排氣氣體流通方向呈正交方向之剖面(框體之剖面)的95%以上(參考圖6),故排氣氣體之流動並無大幅擾動,而會有效率地且充份地與捕集板86之主捕集面92接觸,其結果,便可大幅提升未反應原料氣體之回收率。
捕獲原料氣體時,當然,與捕集板84之排氣氣體流動對向的副捕集面93或支撐環90及支撐桿88表面皆可捕獲原料氣體。又,進行去除對捕集板84所捕獲之原料的維護(maintenance)作業時,係從框體74本體側拆下開關蓋80,從框體74本體側取出一體化被支撐於支撐桿88的各捕集單元86。此處,亦可對於各捕集板84表面施以噴砂處理或刻痕(Scotch)處理等粗糙面加工以預先賦予微小之凹凸,根據前述,原料氣體之捕獲乃至吸附時機會加快,可更加提升原料氣體之回收率。
又,亦可對各捕集板84表面,預先吸附有與捕獲對象物相同之物質(即,此處指原料),據此,原料氣體因凝固吸附而形成核心時,可促進
其核心形成而發揮培育(Incubation)效果,可再進一步提升原料氣體之回收率。在進行捕獲對象物的回收維護時,不全部去除吸附於捕集板84之捕獲對象物,藉由殘留有其一部分而可輕易達成對於該捕集板84的原料吸附操作。又,若同時進行該原料之吸附操作與前述粗糙面加工,便可更加提升其回收率。此處,雖已說明捕獲原料氣體的情況為例,但因成膜而產生有作為捕獲對象物的副反應生成物之情況亦可適用於本發明一實施形態。
如上述,根據本發明一實施形態,由於係將相對排氣氣體流通方向而使主捕集面92呈平行般配置,並具有朝排氣氣體流通方向之正交方向以相互隔著特定間隔而設置之複數個捕集板84的捕集單元86沿排氣氣體流通方向而設置有複數個,故可提升反應副生成物或未反應原料氣體等捕獲對象物之回收率。
以上,雖已參考添附圖式詳細地說明本發明之捕集裝置及成膜裝置的較佳實施形態,但本發明之捕集裝置及成膜裝置的技術範圍並不限定於該等範例。本發明所屬技術領域中具有通常知識者可明瞭,於申請專利範圍所記載之技術思想範疇內,可想到各種變更範例或修正範例,對於該等形態,亦當然屬於本發明之捕集裝置及成膜裝置的技術範圍。又,存在有複數種前述實施形態及變形例的情況中,可於不相矛盾的範圍下加以組合配置。
例如,於前述實施例中,雖然各捕集板84一律進行冷卻,但該情況中,對於各捕集板84之溫度,亦可依照從排氣氣體流通方向上游側往下游側般使得溫度依序降低而具有溫度梯度。據此,上游側捕集板84的溫度會較下游側較高,且越朝向排氣氣體下游側則溫度越低,如此可防止排氣氣體上游側之捕集板的捕獲對象物之捕獲量過多,其結果,可防止該上游側捕集板附近的排氣氣體通路變窄而阻塞。此處例如上游側捕集板84的溫度為約25~30℃,下游側捕集板84的溫度為約20~25。
又,於前述實施例中,雖係將各捕集板84間之排列間距L2(參考圖3)設定為固定,但本發明不限定於此,亦可將該排列間距L2設置具有間距梯度,即從排氣氣體流通方向上游側往下游側會依序變小。據此,可防止排氣氣體上游側之捕集板的捕獲對象物之捕獲量過多,其結果,可防止該上游側捕集板附近的排氣氣體通路變窄而阻塞。該情況中’亦可同時具有前
述間距梯度與捕集板84之溫度梯度。
又,前述實施例中,捕集板84之剖面雖為矩形,但不限定於此,例如剖面亦可為橢圓形。又,前述實施例中,為了支撐捕集板84,而設置有支撐環90或支撐桿88,但本發明不限定於此,亦可將該捕集板84兩端或一端直接安裝固定於框體74之內面。據此,由於圖2中所示之支撐環90外周面與框體74內周面之間的間隙部份會消失,因此相對於各捕集板84之排氣氣體流通方向投影面總計,便可覆蓋相對於框體74剖面的100%。又,此處框體74之剖面雖為圓形,但本發明不限定於此,例如剖面亦可為四角形。
又,前述實施例中,雖已例示說明了使用Ru3(CO)12作為有機金屬化合物原料的情況,但本發明不限定於此,前述有機金屬化合物亦可使用由下列群組中所選出的1種材料:Ru3(CO)12、W(CO)6、Ni(CO)4、Mo(CO)6、Co2(CO)8、Rh4(CO)12、Re2(CO)10、Cr(CO)6、Os3(CO)12、Ta(CO)5、TEMAT(tetrakis(ethylmethylamino)titanium)、TAIMATA(t-Amylimidotris(dimethylamido)tantalum(V))、Cu(EDMDD)2、TaCl5、三甲基鋁(TMA)、TBTDET(Tris(diethylamino)(tert-butylimido)tantalum)、PET(pentaethoxy tantalum)、四甲基矽烷(TMS)、TEH(Tetrakis(ethoxy)hafnium)、Cp2Mn〔=Mn(C5H5)2〕、(MeCp)2Mn〔=Mn(CH3C5H4)2〕、(EtCp)2Mn〔=Mn(C2H5C5H4)2〕、(i-PrCp)2Mn〔=Mn(C3H7C5H4)2〕、MeCpMn(CO)3〔=(CH3C5H4)Mn(CO)3〕、(t-BuCp)2Mn〔=Mn(C4H9C5H4)2〕、CH3Mn(CO)5、Mn(DPM)3〔=Mn(C11H19O2)3〕、Mn(DMPD)(EtCp)〔=Mn(C7H11C2H5C5H4)〕、Mn(acac)2〔=Mn(C5H7O2)2〕、Mn(DPM)2〔=Mn(C11H19O2)2〕、Mn(acac)3〔=Mn(C5H7O2)3〕。
又,使用有機金屬化合物以外之其它成膜用原料作為原料的情況亦可適用於本發明。此處所說明之成膜裝置單純僅為一範例,只要是使用原料氣體的成膜裝置,無論何種形式之成膜裝置均可適用於本發明。又,本發明不僅適用於枚葉式成膜裝置,亦可適用於可一次處理複數個晶圓,即,批次式成膜裝置。
又,此處雖已說明以晶圓作為被處理體的範例,該晶圓亦包含於矽基
板或GaAs、SiC、GaN等化合物半導體基板,進一步地,不限定於該等基板,使用於液晶表示裝置的玻璃基板或陶瓷基板等亦可適用於本發明。
本發明係根據2012年3月19日所申請之日本專利申請2012-062446號主張優先權,其全部內容援引於此。
62‧‧‧排氣通道
68‧‧‧捕集裝置
74‧‧‧框體
76‧‧‧氣體入口
78‧‧‧氣體出口
80‧‧‧開關蓋
82‧‧‧密封組件
84‧‧‧捕集板
86‧‧‧捕集單元
88‧‧‧支撐桿
90‧‧‧支撐環
96‧‧‧冷卻裝置
Claims (10)
- 一種捕集裝置,係具備:框體,係介設在流通有來自處理容器之排氣氣體的排氣通道途中;捕集單元,係設置於該框體內,相對該排氣氣體流通方向而使主捕集面呈平行般配置,具有朝該排氣氣體流通方向之正交方向以相互隔著間隔而設置的複數個捕集板;以及用以冷卻該複數個捕集板的冷卻裝置;其中沿該排氣氣體流通方向設置有複數個該捕集單元。
- 如申請專利範圍第1項之捕集裝置,其中該冷卻裝置具有設置於該框體區隔壁的冷卻套管,以藉由該冷卻套管來冷卻該複數個捕集板。
- 如申請專利範圍第2項之捕集裝置,其中該複數個捕集板表面預先附著有與該捕獲對象物相同之物質。
- 如申請專利範圍第1至3項中任一項之捕集裝置,其中該複數個捕集板具有厚度,該複數個捕集板相對該排氣氣體流通方向之投影面總計設定為覆蓋該框體剖面之95%以上。
- 如申請專利範圍第1至3項中之任一項之捕集裝置,其中該捕集單元之該複數個捕集板係藉由支撐環一體化地加以支撐。
- 如申請專利範圍第1至3項中之任一項之捕集裝置,其中該複數個捕集單元係藉由支撐桿一體化地加以支撐。
- 如申請專利範圍第1至3項中之任一項之捕集裝置,其中該複數個捕集板之溫度係設定為從該排氣氣體流通方向上游側往下游側會依序降低。
- 如申請專利範圍第1至3項中之任一項之捕集裝置,其中該捕集單元中該複數個捕集板之排列間距係設定為從該排氣氣體流通方向上游側往下游側會依序變小。
- 如申請專利範圍第1項之捕集裝置,其中該複數個捕集板表面施有粗糙面加工。
- 一種成膜裝置,係施以使用原料氣體而於被處理體形成薄膜之成膜處理用的成膜裝置,具備:可真空排氣的處理容器;載置該被處理體的載置台;將氣體導入該處理容器內的氣體導入裝置;連接至該氣體導入裝置而具有供給該原料氣體之原料氣體供給系統的氣體供給系統;排出該處理容器內氣氛的排氣系統;以及設置於該排氣系統的捕集裝置;其中該捕集裝置,係具備:框體,係設置於該排氣系統中介設在流通排氣氣體的排氣通道途中;捕集單元,係設置於該框體內,相對該排氣氣體流通方向而使主捕集面呈平行般配置,具有朝該排氣氣體流通方向之正交方向以相互隔著間隔而設置的複數個捕集板;以及用以冷卻該複數個捕集板的冷卻裝置;其中沿該排氣氣體流通方向設置有複數個該捕集單元。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012062446A JP5874469B2 (ja) | 2012-03-19 | 2012-03-19 | トラップ装置及び成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201404920A TW201404920A (zh) | 2014-02-01 |
TWI567220B true TWI567220B (zh) | 2017-01-21 |
Family
ID=49222544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102109403A TWI567220B (zh) | 2012-03-19 | 2013-03-18 | Capture device and film forming device |
Country Status (5)
Country | Link |
---|---|
US (1) | US9896761B2 (zh) |
JP (1) | JP5874469B2 (zh) |
KR (1) | KR101662421B1 (zh) |
TW (1) | TWI567220B (zh) |
WO (1) | WO2013141084A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2540582A (en) * | 2015-07-22 | 2017-01-25 | Edwards Ltd | Apparatus for evacuating a corrosive effluent gas stream from a processing chamber |
GB2540580A (en) | 2015-07-22 | 2017-01-25 | Edwards Ltd | Liquid ring pump |
KR102477302B1 (ko) * | 2015-10-05 | 2022-12-13 | 주성엔지니어링(주) | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
JP6618113B2 (ja) * | 2015-11-02 | 2019-12-11 | 株式会社Screenホールディングス | 基板処理装置 |
WO2017177398A1 (en) * | 2016-04-13 | 2017-10-19 | Applied Materials, Inc. | Apparatus for exhaust cooling |
KR20180000928A (ko) * | 2016-06-24 | 2018-01-04 | 세메스 주식회사 | 가열 처리 유닛, 이를 갖는 베이크 장치 및 이를 이용한 기판 처리 방법 |
KR102306675B1 (ko) | 2017-05-19 | 2021-09-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 액체 및 고체 유출물의 수집 및 가스 유출물로의 후속 반응을 위한 장치 |
US10366909B2 (en) * | 2017-07-27 | 2019-07-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal chamber exhaust structure and method |
KR102344996B1 (ko) | 2017-08-18 | 2021-12-30 | 삼성전자주식회사 | 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법 |
JP6773711B2 (ja) * | 2018-03-27 | 2020-10-21 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
CN112391611B (zh) * | 2019-08-14 | 2023-05-26 | 湖南红太阳光电科技有限公司 | 一种等离子体增强原子层沉积镀膜装置 |
KR102228180B1 (ko) * | 2021-01-21 | 2021-03-16 | 주식회사 미래보 | 유기막 증착 공정 시 발생하는 반응 부산물 포집 장치 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200817538A (en) * | 2006-04-24 | 2008-04-16 | Mitsubishi Cable Ind Ltd | Exhaust system |
TW201104007A (en) * | 2009-03-13 | 2011-02-01 | Tokyo Electron Ltd | Substrate processing apparatus, trap apparatus, control method of substrate processing apparatus and control method of trap apparatus |
TW201132776A (en) * | 2009-12-09 | 2011-10-01 | Ulvac Inc | Apparatus for forming organic thin film and method for forming thin film of organic material |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE25061E (en) * | 1957-05-24 | 1961-10-24 | Impingement-type separators | |
US3136627A (en) * | 1959-06-11 | 1964-06-09 | Jr Herbert S Caldwell | Process and apparatus for selective condensation of metals |
US3460580A (en) * | 1968-02-19 | 1969-08-12 | Cenco Instr Corp | Baffle assembly and method of forming same |
JPS53106626A (en) * | 1977-03-02 | 1978-09-16 | Komatsu Mfg Co Ltd | Method of making high purity rod silicon and appratus therefor |
SE451464B (sv) * | 1981-12-01 | 1987-10-12 | Lumalampan Ab | Forfarande och anordning for atervinning av kvicksilver ur avfall innehallande organiskt material |
US4488887A (en) * | 1983-10-17 | 1984-12-18 | R. J. Reynolds Tobacco Company | Cold trap |
JPH05154334A (ja) * | 1991-12-11 | 1993-06-22 | Fujitsu Ltd | 半導体製造装置の排気ポンプシステム |
JP3287730B2 (ja) * | 1995-04-20 | 2002-06-04 | 東京エレクトロン株式会社 | 混入物の除去装置、これを用いた処理装置の真空排気系及びそのメンテナンス方法 |
JPH0942593A (ja) * | 1995-07-31 | 1997-02-14 | Ulvac Japan Ltd | トラップ |
JP3540064B2 (ja) * | 1995-09-04 | 2004-07-07 | 株式会社アルバック | ドライ真空ポンプ前段用のトラップ |
JPH0972493A (ja) * | 1995-09-04 | 1997-03-18 | Ulvac Japan Ltd | ドライ真空ポンプ後段用のトラップ |
US5820641A (en) * | 1996-02-09 | 1998-10-13 | Mks Instruments, Inc. | Fluid cooled trap |
US6332925B1 (en) * | 1996-05-23 | 2001-12-25 | Ebara Corporation | Evacuation system |
US5928426A (en) * | 1996-08-08 | 1999-07-27 | Novellus Systems, Inc. | Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors |
US6156107A (en) * | 1996-11-13 | 2000-12-05 | Tokyo Electron Limited | Trap apparatus |
JP3991375B2 (ja) | 1996-11-13 | 2007-10-17 | 東京エレクトロン株式会社 | トラップ装置 |
JPH1180964A (ja) * | 1997-07-07 | 1999-03-26 | Canon Inc | プラズマcvd法による堆積膜形成装置 |
US6544333B2 (en) * | 1997-12-15 | 2003-04-08 | Advanced Silicon Materials Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
US6221155B1 (en) * | 1997-12-15 | 2001-04-24 | Advanced Silicon Materials, Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
JPH11302851A (ja) | 1998-04-16 | 1999-11-02 | Ebara Corp | Cvd装置の原料ガス捕集トラップ |
JP4599701B2 (ja) | 1999-11-24 | 2010-12-15 | 東京エレクトロン株式会社 | 成膜装置の排気系構造及び不純物ガスの除去方法 |
US6773687B1 (en) | 1999-11-24 | 2004-08-10 | Tokyo Electron Limited | Exhaust apparatus for process apparatus and method of removing impurity gas |
US6991684B2 (en) * | 2000-09-29 | 2006-01-31 | Tokyo Electron Limited | Heat-treating apparatus and heat-treating method |
JP4111803B2 (ja) | 2001-12-20 | 2008-07-02 | 田中貴金属工業株式会社 | Lpcvd装置及び薄膜製造方法 |
KR100631924B1 (ko) * | 2005-01-24 | 2006-10-04 | 삼성전자주식회사 | 반도체 설비의 잔류부산물 포집장치 |
KR100558562B1 (ko) * | 2005-02-01 | 2006-03-13 | 삼성전자주식회사 | 반도체 설비용 부산물 포집장치 |
JP4592746B2 (ja) * | 2005-03-02 | 2010-12-08 | 株式会社日立国際電気 | 半導体製造装置及び半導体装置の製造方法並びに排気トラップ装置 |
JP2006314864A (ja) * | 2005-05-10 | 2006-11-24 | Mitsubishi Electric Corp | 排気トラップ装置 |
KR100621660B1 (ko) * | 2005-07-01 | 2006-09-11 | 주식회사 뉴프로텍 | 반도체 부산물 트랩장치 |
JP5023646B2 (ja) * | 2006-10-10 | 2012-09-12 | 東京エレクトロン株式会社 | 排気系、捕集ユニット及びこれを用いた処理装置 |
-
2012
- 2012-03-19 JP JP2012062446A patent/JP5874469B2/ja active Active
-
2013
- 2013-03-12 KR KR1020147028904A patent/KR101662421B1/ko active IP Right Grant
- 2013-03-12 WO PCT/JP2013/056833 patent/WO2013141084A1/ja active Application Filing
- 2013-03-18 TW TW102109403A patent/TWI567220B/zh active
-
2014
- 2014-09-19 US US14/491,940 patent/US9896761B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200817538A (en) * | 2006-04-24 | 2008-04-16 | Mitsubishi Cable Ind Ltd | Exhaust system |
TW201104007A (en) * | 2009-03-13 | 2011-02-01 | Tokyo Electron Ltd | Substrate processing apparatus, trap apparatus, control method of substrate processing apparatus and control method of trap apparatus |
TW201132776A (en) * | 2009-12-09 | 2011-10-01 | Ulvac Inc | Apparatus for forming organic thin film and method for forming thin film of organic material |
Also Published As
Publication number | Publication date |
---|---|
US20150136027A1 (en) | 2015-05-21 |
JP2013194278A (ja) | 2013-09-30 |
WO2013141084A1 (ja) | 2013-09-26 |
JP5874469B2 (ja) | 2016-03-02 |
KR20140138289A (ko) | 2014-12-03 |
KR101662421B1 (ko) | 2016-10-04 |
TW201404920A (zh) | 2014-02-01 |
US9896761B2 (en) | 2018-02-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI567220B (zh) | Capture device and film forming device | |
US8349283B2 (en) | Metal recovery method, metal recovery apparatus, gas exhaust system and film forming device using same | |
TWI390075B (zh) | Touch chemical chemical vaporization device | |
JP6007715B2 (ja) | トラップ機構、排気系及び成膜装置 | |
CN102725438B (zh) | 成膜装置 | |
US7988755B2 (en) | Byproduct collecting apparatus of semiconductor apparatus | |
JP5482282B2 (ja) | 載置台構造及び成膜装置 | |
JP5445252B2 (ja) | 成膜装置 | |
US20110265725A1 (en) | Film deposition device and substrate processing device | |
US8408025B2 (en) | Raw material recovery method and trapping mechanism for recovering raw material | |
US20130061969A1 (en) | Exhaust trap | |
US20120055403A1 (en) | Mounting table structure, film forming apparatus and raw material recovery method | |
JP2007247062A (ja) | パーティクルの形成を低減する金属層成膜システム、気相原料分配システムおよび方法 | |
JP2007511902A (ja) | 薄膜成長用反応装置 | |
TW201734353A (zh) | 用於原子層沉積及化學氣相沉積反應器之使用點閥箱 | |
JPWO2005124845A1 (ja) | 基板処理装置及び半導体装置の製造方法 | |
KR20090005979A (ko) | 수직 반응기 내에서의 뱃치 처리를 위한 방법 및 장치 | |
JP6891018B2 (ja) | 基板処理装置、気化システム及びミストフィルタ並びに半導体装置の製造方法 | |
US11306971B2 (en) | Heat exchanger with multistaged cooling | |
TW201439367A (zh) | Cvd裝置及cvd裝置處理室的淨化方法 | |
JP2013165222A (ja) | ガス供給装置及び熱処理装置 | |
JP2004305950A (ja) | 排気トラップ、排気トラップのクリーニング方法、及び、反応処理装置 | |
KR101674000B1 (ko) | 기판 처리 장치 및 회수 장치 | |
JP2006066605A (ja) | 気相成長装置 | |
KR20060088667A (ko) | 반도체 소자 제조용 장비 |