TWI535054B - LED components - Google Patents

LED components Download PDF

Info

Publication number
TWI535054B
TWI535054B TW103100646A TW103100646A TWI535054B TW I535054 B TWI535054 B TW I535054B TW 103100646 A TW103100646 A TW 103100646A TW 103100646 A TW103100646 A TW 103100646A TW I535054 B TWI535054 B TW I535054B
Authority
TW
Taiwan
Prior art keywords
layer
led element
current diffusion
semiconductor
ingan
Prior art date
Application number
TW103100646A
Other languages
English (en)
Chinese (zh)
Other versions
TW201432937A (zh
Inventor
Kohei Miyoshi
Masashi Tsukihara
Original Assignee
Ushio Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Electric Inc filed Critical Ushio Electric Inc
Publication of TW201432937A publication Critical patent/TW201432937A/zh
Application granted granted Critical
Publication of TWI535054B publication Critical patent/TWI535054B/zh

Links

Landscapes

  • Led Devices (AREA)
TW103100646A 2013-01-23 2014-01-08 LED components TWI535054B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013010554 2013-01-23

Publications (2)

Publication Number Publication Date
TW201432937A TW201432937A (zh) 2014-08-16
TWI535054B true TWI535054B (zh) 2016-05-21

Family

ID=51612280

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103100646A TWI535054B (zh) 2013-01-23 2014-01-08 LED components

Country Status (2)

Country Link
JP (1) JP5800251B2 (ja)
TW (1) TWI535054B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6135954B2 (ja) * 2015-10-22 2017-05-31 ウシオ電機株式会社 窒化物半導体発光素子
CN112436076A (zh) * 2020-11-20 2021-03-02 湘能华磊光电股份有限公司 一种led外延结构及生长方法

Also Published As

Publication number Publication date
JP5800251B2 (ja) 2015-10-28
JP2014160806A (ja) 2014-09-04
TW201432937A (zh) 2014-08-16

Similar Documents

Publication Publication Date Title
JP4572963B2 (ja) Ｉｉｉ族窒化物系半導体発光素子、及びエピタキシャルウエハ
JP5634368B2 (ja) 半導体装置
JP5044692B2 (ja) 窒化物半導体発光素子
US8507891B2 (en) Group III nitride semiconductor light-emitting device and production method therefor
WO2010100844A1 (ja) 窒化物半導体素子及びその製造方法
US9373750B2 (en) Group III nitride semiconductor light-emitting device
US20180269349A1 (en) Nitride semiconductor structure
JP5861947B2 (ja) 半導体発光素子及びその製造方法
US20120138891A1 (en) METHOD FOR REDUCTION OF EFFICIENCY DROOP USING AN (Al,In,Ga)N/Al(x)In(1-x)N SUPERLATTICE ELECTRON BLOCKING LAYER IN NITRIDE BASED LIGHT EMITTING DIODES
US9263639B2 (en) Group III nitride semiconductor light-emitting device
WO2016072150A1 (ja) 窒化物半導体発光素子
TW201607076A (zh) Ｌｅｄ元件
US9818907B2 (en) LED element
JP2008288532A (ja) 窒化物系半導体装置
TWI535054B (zh) LED components
JP5380516B2 (ja) 窒化物半導体発光素子
JP2014003121A (ja) 窒化物半導体発光素子
JP6071044B2 (ja) 半導体発光素子及びその製造方法
JP5800252B2 (ja) Ｌｅｄ素子
KR101387543B1 (ko) 질화물 반도체 발광 소자
US20230076732A1 (en) Method of manufacturing light emitting element
CN108470806B (zh) GaN基LED发光结构及其制作方法
WO2014115800A1 (ja) Ｌｅｄ素子
JP2016225525A (ja) 窒化物半導体発光素子
US9508895B2 (en) Group III nitride semiconductor light-emitting device and production method therefor