TWI457718B - An alignment method, an exposure method, a manufacturing method of an electronic component, an alignment device, and an exposure device - Google Patents
An alignment method, an exposure method, a manufacturing method of an electronic component, an alignment device, and an exposure device Download PDFInfo
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- TWI457718B TWI457718B TW099102198A TW99102198A TWI457718B TW I457718 B TWI457718 B TW I457718B TW 099102198 A TW099102198 A TW 099102198A TW 99102198 A TW99102198 A TW 99102198A TW I457718 B TWI457718 B TW I457718B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Description
本發明，係關於一種進行帶狀基板與設有曝光於該基板之圖案構件之位置對準之對準技術、使用了該對準技術之曝光技術。The present invention relates to an alignment technique for performing alignment of a strip substrate with a pattern member exposed to the substrate, and an exposure technique using the alignment technique.
用於LCD、PDP、或有機電場發光之類平面面板顯示器(FPD)之玻璃基板或樹脂基板，為了因應畫面之大型化要求而有尺寸大型化之趨勢。用以將光罩之電路圖案曝光於玻璃基板或樹脂基板之曝光裝置，亦因應玻璃基板或樹脂基板之大型化而趨於大型。A glass substrate or a resin substrate for a flat panel display (FPD) such as an LCD, a PDP, or an organic electric field light has a tendency to increase in size in response to an increase in size of a screen. An exposure apparatus for exposing a circuit pattern of a photomask to a glass substrate or a resin substrate tends to be large in size in response to an increase in size of the glass substrate or the resin substrate.
又，曝光裝置中，為了對應FPD等之量產與大型化，亦出現了一種移送捲繞成圓筒狀之帶狀基板並曝光之裝置。例如專利文獻1所揭示之投影曝光裝置，即係藉由對帶狀基板交互進行真空及解除真空並使載台移動於移送方向，而間接地移送帶狀基板。在使載台之移動方向與光罩之投影圖案之方向一致後，投影曝光裝置即高精度地依序移動載台且將帶狀基板移送於曝光區域，並將光罩之圖案依序投影曝光至帶狀基板。Further, in the exposure apparatus, in order to cope with the mass production and enlargement of the FPD or the like, there has also been a device for transferring and exposing a strip-shaped substrate wound in a cylindrical shape. For example, in the projection exposure apparatus disclosed in Patent Document 1, the strip substrate is indirectly transferred by vacuuming and releasing the vacuum on the strip substrate and moving the stage in the transfer direction. After the moving direction of the stage is aligned with the direction of the projection pattern of the reticle, the projection exposure apparatus sequentially moves the stage with high precision and transfers the strip substrate to the exposure area, and sequentially projects the pattern of the reticle. To the strip substrate.
又，專利文獻2係揭示使大型玻璃基板曝光之曝光裝置。此曝光裝置揭示了使用基準構件求出光罩與離軸方式之對準檢測系統之相對位置即基線量之技術。在測量基線量後，對準檢測系統檢測出形成於玻璃基板之對準標記。Further, Patent Document 2 discloses an exposure apparatus that exposes a large glass substrate. This exposure apparatus discloses a technique of determining the relative position of the reticle and the off-axis alignment detection system, that is, the baseline amount, using the reference member. After measuring the baseline amount, the alignment detection system detects the alignment marks formed on the glass substrate.
[專利文獻1]日本特開2007－114385號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-114385
[專利文獻2]日本特開2003－347185號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2003-347185
然而，專利文獻1所揭示之投影曝光裝置，並未揭示在捲繞成圓筒狀之帶狀基板之移送中觀察帶狀基板之位置之對準攝影機等。假設，將與專利文獻2所揭示之基線測量及對準標記之檢測相關之技術適用於專利文獻1時，由於帶狀基板係連續存在於移送方向，因此為了檢測基準構件必須經由帶狀基板進行檢測。然而，當經由帶狀基板進行標記檢測後，會受到基板之扭曲或厚度不均一性等之影響，而有無法高精度地進行標記檢測之問題。However, the projection exposure apparatus disclosed in Patent Document 1 does not disclose an alignment camera or the like that observes the position of the strip substrate in the transfer of the strip-shaped substrate wound in a cylindrical shape. When the technique related to the detection of the baseline measurement and the alignment mark disclosed in Patent Document 2 is applied to Patent Document 1, since the strip substrate is continuously present in the transfer direction, it is necessary to perform the strip substrate through the strip substrate in order to detect the reference member. Detection. However, when the mark is detected via the strip substrate, it is affected by the distortion of the substrate, the thickness unevenness, and the like, and there is a problem that the mark detection cannot be performed with high precision.
本發明之態樣，係提供一種對準方法、對準裝置、曝光裝置及元件製造方法，其能高精度地進行帶狀基板與設有曝光於該基板之圖案之圖案構件之位置對準。According to an aspect of the invention, there is provided an alignment method, an alignment device, an exposure device, and a device manufacturing method capable of accurately positioning a tape substrate and a pattern member provided with a pattern exposed to the substrate.
根據本發明之第1態樣，提供一種對準方法，係進行帶狀基板與設有待曝光於該基板之圖案之圖案構件之位置對準，其具備：經由設於基板之貫通孔，檢測關於設在保持基板並移動之載台裝置之基準構件與圖案構件之相對位置之第1資訊之步驟；檢測關於設在基板之對準標記之位置之第2資訊之步驟；經由貫通孔，檢測關於用以檢測對準標記位置之檢測器與基準構件之相對位置之第3資訊之步驟；以及根據第1、第2及第3資訊，驅動載台裝置之步驟。According to a first aspect of the present invention, there is provided an alignment method for aligning a strip substrate with a pattern member provided with a pattern to be exposed to the substrate, the method comprising: detecting via a through hole provided in the substrate a step of detecting first information on a position of a reference member of the stage device that holds the substrate and moving the substrate member; and detecting a second information on a position of the alignment mark provided on the substrate; and detecting about the second information via the through hole a step of detecting third information of a relative position of the detector at the position of the alignment mark and the reference member; and a step of driving the stage device based on the first, second and third information.
根據本發明之第2態樣，提供一種曝光方法，係將設於圖案構件之圖案曝光於帶狀基板，其具備：使用本發明第1態樣之對準方法進行基板與圖案構件之位置對準之步驟；以及經由圖案將曝光用光照射於已相對圖案構件進行位置對準之基板之步驟。According to a second aspect of the present invention, there is provided an exposure method for exposing a pattern provided on a pattern member to a strip substrate, wherein the alignment of the substrate and the pattern member is performed by using the alignment method according to the first aspect of the present invention. a step of aligning; and exposing the exposure light to the substrate that has been aligned with respect to the pattern member via the pattern.
根據本發明之第3態樣，提供一種元件製造方法，其具備：使用本發明之第2態樣之曝光方法將圖案轉印於塗布有感光劑之基板之步驟；使轉印有圖案之基板之感光劑顯影，以形成具有與圖案對應之凹凸形狀之轉印圖案層之步驟；以及經由轉印圖案層對基板進行加工之步驟。According to a third aspect of the present invention, a method of manufacturing a device comprising: a step of transferring a pattern onto a substrate coated with a photosensitive agent using an exposure method according to a second aspect of the present invention; and a substrate on which a pattern is transferred is provided The photosensitive agent is developed to form a transfer pattern layer having a concave-convex shape corresponding to the pattern; and a step of processing the substrate via the transfer pattern layer.
根據本發明之第4態樣，提供一種對準裝置，係進行帶狀基板與設有待曝光於該基板之圖案之圖案構件之位置對準，其具備：保持帶狀基板並移動之載台裝置；配置於載台裝置之基準構件；經由設於基板之貫通孔，檢測關於基準構件與圖案構件之相對位置之第1資訊之第1檢測器；檢測關於設在基板之對準標記之位置之第2資訊之第2檢測器；經由貫通孔檢測關於第2檢測器與基準構件之相對位置之第3資訊之第3檢測器；以及根據第1、第2及第3資訊，驅動載台裝置之驅動機構。According to a fourth aspect of the present invention, there is provided an alignment apparatus for aligning a strip substrate with a pattern member provided with a pattern to be exposed to the substrate, comprising: a stage device for holding the strip substrate and moving a reference member disposed on the stage device; a first detector that detects first information on a relative position of the reference member and the pattern member via a through hole provided in the substrate; and detects a position on the alignment mark provided on the substrate a second detector of the second information; a third detector that detects the third information about the relative position of the second detector and the reference member via the through hole; and the stage device that drives the stage based on the first, second, and third information Drive mechanism.
根據本發明之第5態樣，提供一種曝光裝置，係將設於圖案構件之圖案曝光於帶狀基板，其具備：進行基板與圖案構件之位置對準之本發明第4態樣之對準裝置；以及經由圖案將曝光用光照射於已相對圖案構件進行位置對準之基板之照射裝置。According to a fifth aspect of the present invention, there is provided an exposure apparatus for exposing a pattern provided on a pattern member to a strip substrate, comprising: aligning the fourth aspect of the present invention for aligning the substrate with the pattern member And an illumination device that irradiates the exposure light to the substrate that has been aligned with respect to the pattern member via the pattern.
根據本發明之態樣，能高精度地進行帶狀基板與設有曝光於該基板之圖案之圖案構件之位置對準。According to the aspect of the invention, the alignment of the strip substrate with the pattern member provided with the pattern exposed to the substrate can be performed with high precision.
<曝光裝置之整體構成><Overall composition of exposure device>
以下，參照圖1說明本發明之實施形態之曝光裝置EX。圖1(a)係顯示本實施形態之曝光裝置EX之概略俯視圖，為方便理解係描繪了帶狀基板FB之下側之部分。圖1(b)係曝光裝置EX之概略側視圖。Hereinafter, an exposure apparatus EX according to an embodiment of the present invention will be described with reference to Fig. 1 . Fig. 1(a) is a schematic plan view showing an exposure apparatus EX of the present embodiment, and a portion on the lower side of the strip substrate FB is depicted for convenience of understanding. Fig. 1(b) is a schematic side view of the exposure apparatus EX.
曝光裝置EX，具有供應帶狀基板FB之供應滾筒FR與捲繞帶狀基板FB之捲繞滾筒WR。供應滾筒FR及捲繞滾筒WR能將帶狀基板FB往箭頭方向移送。此處之帶狀基板FB係能捲繞成圓筒狀之薄樹脂膜。帶狀基板FB具有相對其面積其厚度十分薄之基板，具有可撓性。帶狀基板FB例如於X軸方向係100公尺之長度，於Y軸方向則為1公尺之寬度，厚度為100微米。於此帶狀基板FB之光罩M側之單面塗布有光阻。帶狀基板FB具體而言可使用聚氯乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯-乙烯共聚物樹脂、聚氯化乙烯樹脂、纖維樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、乙酸乙烯酯樹脂。The exposure device EX has a supply roller FR that supplies the strip substrate FB and a winding roller WR that winds the tape substrate FB. The supply roller FR and the winding roller WR can transfer the strip substrate FB in the direction of the arrow. Here, the strip substrate FB can be wound into a cylindrical thin resin film. The strip substrate FB has a substrate whose thickness is extremely thin with respect to its area, and has flexibility. The strip substrate FB has a length of, for example, 100 m in the X-axis direction, a width of 1 m in the Y-axis direction, and a thickness of 100 μm. A photoresist is coated on one side of the mask M side of the strip substrate FB. Specifically, the strip substrate FB may be a polyvinyl chloride resin, a polypropylene resin, a polyester resin, an ethylene-ethylene copolymer resin, a polyvinyl chloride resin, a fiber resin, a polyamide resin, a polyimide resin, or a poly Carbonate resin, polystyrene resin, vinyl acetate resin.
曝光裝置EX具備：支撐形成有圖案之光罩M之光罩載台MST、以及支撐帶狀基板FB之基板載台FBS。光罩M係於石英玻璃描繪有電路圖案等之構件。曝光裝置EX具備：用以檢測光罩載台MST(支撐光罩M)之X軸方向及Y軸方向之位置之複數個雷射干涉儀LM、以及用以檢測基板載台FBS(支撐帶狀基板FB)之X軸方向及Y軸方向之位置之複數個雷射干涉儀MM。光罩載台MST，可藉由未圖示之線性馬達等在X軸方向移動較長動程，且可在Y軸方向移動較短動程。基板載台FBS亦同樣地可在X軸方向移動較長動程且在Y軸方向移動較短動程。此外，圖1(b)中僅各描繪一個檢測X軸方向之位置之雷射干涉儀LMx及雷射干涉儀MMx。The exposure apparatus EX includes a mask stage MST that supports the mask M in which the pattern is formed, and a substrate stage FBS that supports the strip substrate FB. The mask M is a member in which quartz glass is drawn with a circuit pattern or the like. The exposure apparatus EX includes a plurality of laser interferometers LM for detecting the positions of the mask stage MST (supporting the mask M) in the X-axis direction and the Y-axis direction, and a substrate carrier FBS (supporting strip shape) A plurality of laser interferometers MM of the substrate FB) in the X-axis direction and the Y-axis direction. The mask stage MST can be moved in the X-axis direction by a long stroke by a linear motor or the like (not shown), and can be moved in the Y-axis direction by a short stroke. Similarly, the substrate stage FBS can move a longer stroke in the X-axis direction and a shorter stroke in the Y-axis direction. Further, in Fig. 1(b), only one laser interferometer LMx and laser interferometer MMx for detecting the position in the X-axis direction are depicted.
又，曝光裝置EX，具有用以將被未圖示照明光學系統之曝光用光EL照明之光罩M之圖案像投影於被基板載台FBS支撐之帶狀基板FB之投影光學系統PL。如圖1(a)中光罩M之圖案之投影像PI呈梯形狀所示，曝光裝置EX具有於X軸方向配置成兩列且在Y軸方向交互排列之三個投影光學系統PL。圖1(b)中係顯示該一個投影光學系統PL。支撐於光罩載台MST之光罩M與支撐於基板載台FBS之帶狀基板FB，係經由投影光學系統PL配置於共軛之位置。Further, the exposure apparatus EX has a projection optical system PL for projecting a pattern image of the mask M illuminated by the exposure light EL of the illumination optical system (not shown) onto the strip substrate FB supported by the substrate stage FBS. As shown in FIG. 1(a), the projection image PI of the pattern of the mask M is shown in a trapezoidal shape, and the exposure apparatus EX has three projection optical systems PL arranged in two rows in the X-axis direction and alternately arranged in the Y-axis direction. The one projection optical system PL is shown in Fig. 1(b). The mask M supported by the mask stage MST and the strip substrate FB supported by the substrate stage FBS are disposed at positions conjugated via the projection optical system PL.
如圖1(b)所示，曝光裝置EX設有可於帶狀基板FB形成既定貫通孔TH之穿孔器10。穿孔器10配置於供應滾筒FR測。穿孔器10亦可係擠壓模具以於帶狀基板FB形成貫通孔TH者，或亦可係藉由雷射光等於帶狀基板FB形成貫通孔TH者。本實施形態之穿孔器10係於Y軸方向開設例如四個貫通孔TH。貫通孔TH之直徑只要係較後述基板側AIS標記93等大之直徑即可。此外，當將帶狀基板FB安裝於供應滾筒FR時已開設有貫通孔TH之情形下，即無須設置穿孔器10。此外，穿孔器10所開設之四個貫通孔TH，形成於投影光學系統PL之Y軸方向兩端之位置與相鄰之投影光學系統PL之梯形投影像PI彼此重疊之位置。As shown in FIG. 1(b), the exposure apparatus EX is provided with a punch 10 which can form a predetermined through hole TH in the strip substrate FB. The punch 10 is disposed on the supply roller FR. The punch 10 may be an extrusion die to form the through hole TH in the strip substrate FB, or may be formed by the laser light equaling the strip substrate FB. In the punch 10 of the present embodiment, for example, four through holes TH are formed in the Y-axis direction. The diameter of the through hole TH may be larger than the diameter of the substrate side AIS mark 93 to be described later. Further, in the case where the through-hole TH is opened when the strip substrate FB is mounted on the supply roller FR, it is not necessary to provide the punch 10. Further, the four through holes TH formed in the punch 10 are formed at positions at both ends in the Y-axis direction of the projection optical system PL and at positions where the trapezoidal projection images PI of the adjacent projection optical systems PL overlap each other.
曝光裝置EX具有與投影光學系統PL相鄰之四個對準攝影機AC，用以檢測設於帶狀基板FB之對準標記。又，具有與對準攝影機AC相鄰之兩個粗對準攝影機RA，用以檢測設於帶狀基板FB之貫通孔TH。對準標記AM，在帶狀基板FB中已於曝光用光EL之照射區域即曝光區域EA之周邊形成有複數個。本實施形態中，係於每一個曝光區域EA之周邊全部形成有16個對準標記AM。此外，圖中對準標記雖係顯示為「+」，但例如亦可係方形標記「□」。The exposure device EX has four alignment cameras AC adjacent to the projection optical system PL for detecting alignment marks provided on the strip substrate FB. Further, two coarse alignment cameras RA adjacent to the alignment camera AC are provided for detecting the through holes TH provided in the strip substrate FB. The alignment mark AM is formed in the strip substrate FB in a plurality of regions around the exposure region EA which is an irradiation region of the exposure light EL. In the present embodiment, 16 alignment marks AM are formed in the periphery of each exposure region EA. In addition, although the alignment mark in the figure is displayed as "+", for example, the square mark "□" may be used.
本實施形態之對準攝影機AC係離軸方式，在進行對準處理時，係測量光罩M與對準攝影機AC之相對位置即基線量。此外，圖1(b)中僅各描繪一個對準攝影機AC及粗對準攝影機RA。The alignment camera AC of the present embodiment is an off-axis method, and measures the relative position of the mask M and the alignment camera AC, that is, the baseline amount, when performing the alignment processing. In addition, only one alignment camera AC and coarse alignment camera RA are depicted in FIG. 1(b).
如圖1(b)所示，於光罩M設有基線測量用之光罩側AIS標記91，於基板載台FBS設有具有基線測量用之基板側AIS標記93之基準構件95。又，光罩側AIS標記91係相對光罩M之特定位置(例如中心位置)以既定關係設置。如圖1(a)所示，光罩側AIS標記91與基板側AIS標記93為對應，分別於Y軸方向例如排列設置四個。As shown in Fig. 1(b), a mask-side AIS mark 91 for baseline measurement is provided in the mask M, and a reference member 95 having a substrate-side AIS mark 93 for baseline measurement is provided on the substrate stage FBS. Further, the mask side AIS mark 91 is provided in a predetermined relationship with respect to a specific position (for example, a center position) of the mask M. As shown in FIG. 1(a), the mask side AIS mark 91 corresponds to the substrate side AIS mark 93, and is arranged, for example, four in the Y-axis direction.
此處，本實施形態之曝光裝置EX，係相對曝光用光EL使光罩M與帶狀基板FB同步移動以進行掃描曝光之掃描型曝光裝置，以下說明中，以投影光學系統PL之光軸方向為Z軸方向、以與Z軸方向垂直之方向使光罩M與帶狀基板FB同步移動之方向為X軸方向(掃描方向)、以與Z軸方向及X軸方向(掃描方向)正交之方向為Y軸方向(非掃描方向)。Here, the exposure apparatus EX of the present embodiment is a scanning type exposure apparatus that performs scanning exposure by moving the mask M and the strip substrate FB in synchronization with the exposure light EL. In the following description, the optical axis of the projection optical system PL is used. The direction in which the direction is the Z-axis direction and the direction in which the mask M and the strip substrate FB are moved in the direction perpendicular to the Z-axis direction is the X-axis direction (scanning direction), and the Z-axis direction and the X-axis direction (scanning direction) are positive. The direction of intersection is the Y-axis direction (non-scanning direction).
圖2係放大圖1(b)之B所示之範圍之概念側視圖。Figure 2 is a conceptual side view enlarging the range shown in B of Figure 1 (b).
<基板載台之構成><Configuration of Substrate Stage>
支撐帶狀基板FB之基板載台FBS具有真空吸附孔21，經由真空吸附孔21保持帶狀基板FB。真空吸附孔21連接於未圖示之真空泵等。基板載台FBS於下側具備基板載台移動部28，係為了能在用以進行X軸方向之一維掃描曝光之於X軸方向較長之動程、以及用以位置對準於與掃描方向正交之Y軸方向之較短動程移動，而使該基板載台FBS移動於X軸方向、Y軸方向、以及以Z軸方向為中心之θZ方向(旋轉方向)。基板載台移動部28藉由未圖示之控制裝置控制。基板載台FBS往X軸方向大幅移動後之狀態係以虛線所示。The substrate stage FBS supporting the strip substrate FB has a vacuum suction hole 21, and the strip substrate FB is held via the vacuum suction hole 21. The vacuum suction hole 21 is connected to a vacuum pump or the like (not shown). The substrate stage FBS includes a substrate stage moving unit 28 on the lower side, and is configured to be capable of performing long-range movement in the X-axis direction for one-dimensional scanning exposure in the X-axis direction, and for positioning and scanning. The substrate stage FBS is moved in the X-axis direction, the Y-axis direction, and the θZ direction (rotation direction) centering on the Z-axis direction by the shorter movement of the Y-axis direction orthogonal to the direction. The substrate stage moving unit 28 is controlled by a control device (not shown). The state in which the substrate stage FBS is largely moved in the X-axis direction is indicated by a broken line.
於基板載台移動部28上部載置有三個或四個之高度調整部26。高度調整部26係於Z軸方向具有約10mm之動程。例如曝光裝置EX在掃描曝光區域EA並曝光後，僅帶狀基板FB被移送而至次一曝光區域EA移動至基板載台FBS上為止，最好係使帶狀基板FB與基板載台FBS空出數mm之間隙。是以，高度調整部26具有用以形成帶狀基板FB與基板載台FBS之間隙之動程。又，高度調整部26為了使投影光學系統PL之成像面與吸附於基板載台FBS之帶狀基板FB之表面一致，係使基板載台FBS移動於光軸方向(Z軸方向)。又，亦能使三個或四個之高度調整部26中之一個或兩個移動，以使基板載台FBS移動於以X軸方向為中心之θX方向(旋轉方向)、以及以Y軸方向為中心之θY方向(旋轉方向)。又，亦可代替將基板載台FBS於Z軸方向進行高度調整之方式，而將基板FB於Z軸方向進行高度調整。此時，只要具備例如使供應滾筒FR及捲繞滾筒WR移動於Z軸方向之機構即可。Three or four height adjustment portions 26 are placed on the upper portion of the substrate stage moving portion 28. The height adjustment unit 26 has a stroke of about 10 mm in the Z-axis direction. For example, after the exposure apparatus EX is scanned and exposed to the exposure area EA, only the strip substrate FB is transferred until the next exposure area EA is moved to the substrate stage FBS, preferably, the strip substrate FB and the substrate stage FBS are empty. A gap of several mm. Therefore, the height adjusting portion 26 has a stroke for forming a gap between the strip substrate FB and the substrate stage FBS. Moreover, the height adjustment unit 26 moves the substrate stage FBS in the optical axis direction (Z-axis direction) so that the imaging surface of the projection optical system PL matches the surface of the strip substrate FB adsorbed on the substrate stage FBS. Further, one or both of the three or four height adjusting portions 26 can be moved to move the substrate stage FBS in the θX direction (rotation direction) centering on the X-axis direction and in the Y-axis direction. The center of the θY direction (rotation direction). Further, instead of adjusting the height of the substrate stage FBS in the Z-axis direction, the substrate FB may be height-adjusted in the Z-axis direction. In this case, for example, a mechanism for moving the supply roller FR and the winding drum WR in the Z-axis direction may be provided.
如圖2所示，在與基板載台FBS之表面相同之面安裝有基準構件95。於基準構件95下方，埋設有使通過基準構件95之光聚光之透鏡系統97與接收經由透鏡系統97之通過光之AIS攝影元件99。AIS攝影元件99係MOS或CCD等二維影像元件。As shown in FIG. 2, the reference member 95 is attached to the same surface as the surface of the substrate stage FBS. Below the reference member 95, a lens system 97 that condenses light passing through the reference member 95 and an AIS photographic element 99 that receives light passing through the lens system 97 are embedded. The AIS imaging element 99 is a two-dimensional image element such as a MOS or a CCD.
圖3係顯示支撐帶狀基板FB之基板載台FBS之另一實施例之概念圖。圖3(a)係顯示本實施形態之基板載台FBS之概略俯視圖，為了有助於理解，係描繪帶狀基板FB下側之部分。圖3(b)係曝光裝置EX之概略側視圖。Fig. 3 is a conceptual view showing another embodiment of the substrate stage FBS supporting the strip substrate FB. Fig. 3(a) is a schematic plan view showing the substrate stage FBS of the present embodiment, and for the sake of understanding, the lower portion of the strip substrate FB is drawn. Fig. 3 (b) is a schematic side view of the exposure apparatus EX.
圖2中，支撐帶狀基板FB之基板載台FBS雖具備真空吸附孔21，但不一定需要具備真空吸附孔21。亦可例如圖3所示，設置一對壓接固定部30以在X軸方向隔著曝光區域EA。壓接固定部30係由兩對活塞部33與一對壓接板35構成。兩對活塞部33配置於基板載台FBS之四角附近，於其一對活塞部33配置有一片延伸於Y軸方向之壓接板35。一對壓接板35係配置成於其間具有曝光區域EA及貫通孔TH。In FIG. 2, the substrate stage FBS supporting the strip substrate FB includes the vacuum suction holes 21, but it is not always necessary to provide the vacuum suction holes 21. Alternatively, as shown in FIG. 3, a pair of crimping fixing portions 30 may be provided to sandwich the exposure region EA in the X-axis direction. The crimping fixing portion 30 is composed of two pairs of piston portions 33 and a pair of crimping plates 35. The two pairs of piston portions 33 are disposed near the four corners of the substrate stage FBS, and a pair of pressing portions 35 extending in the Y-axis direction are disposed in the pair of piston portions 33. The pair of crimping plates 35 are disposed to have an exposure region EA and a through hole TH therebetween.
當兩對活塞部33從圖3(b)所描繪狀態沿Z軸方向往下後，一對壓接板35即將帶狀基板FB壓接於基板載台FBS。由於帶狀基板FB較長，因此有時會有多餘之張力施加於帶狀基板FB之情形。又，亦有可能產生供應滾筒FR及捲繞滾筒WR與基板載台FBS之移動不同步之情形。在此等情形下，由於帶狀基板FB係於Z軸方向被壓接板35按壓於基板載台FBS，因此不須擔心帶狀基板FB之位置偏移。When the two pairs of piston portions 33 are lowered in the Z-axis direction from the state depicted in FIG. 3(b), the pair of crimping plates 35 press the strip substrate FB against the substrate stage FBS. Since the strip substrate FB is long, there is a case where excessive tension is applied to the strip substrate FB. Further, there is a possibility that the supply roller FR and the winding roller WR are not synchronized with the movement of the substrate stage FBS. In these cases, since the strip substrate FB is pressed against the substrate stage FBS by the crimping plate 35 in the Z-axis direction, there is no need to worry about the positional shift of the strip substrate FB.
此外，除了設於基板載台FBS之真空吸附孔21以外，亦可設置壓接固定部30。藉由上述構成，即可更加減少帶狀基板FB之位置偏移。Further, in addition to the vacuum suction holes 21 provided in the substrate stage FBS, the pressure-bonding fixing portion 30 may be provided. According to the above configuration, the positional shift of the strip substrate FB can be further reduced.
<對準攝影機之構成><Organization of Aligning Camera>
再度回到圖2，說明對準攝影機AC。對準攝影機AC係檢測設於帶狀基板FB之對準標記AM。對準攝影機AC係在交互排列之投影光學系統PL之間以與帶狀基板FB對向之方式在Y軸方向排列設有四個。Returning again to Figure 2, the alignment camera AC is illustrated. The alignment camera AC detects the alignment mark AM provided on the strip substrate FB. The alignment camera AC is provided with four in the Y-axis direction so as to face the strip substrate FB between the mutually arranged projection optical systems PL.
對準攝影機AC具有射出對準用檢測光之對準用光源81、使從對準用光源81射出之檢測光延伸之中繼透鏡82、設於中繼透鏡82之光路下游側之半反射鏡83。又，對準攝影機AC，具有使通過半反射鏡83之檢測光照射於帶狀基板FB之物鏡84。又，對準攝影機AC具有使來自帶狀基板FB之反射光分歧之分束器85與高倍率之高倍率用透鏡86，以及高倍率用攝影元件ACC，而能以高精度測量貫通孔TH內之狹窄區域。高倍率用攝影元件ACC係MOS或CCD等之二維影像元件。亦即，對準攝影機AC係藉由檢測光之照射經由半反射鏡83及物鏡84照射帶狀基板FB上之對準標記AM，經由半反射鏡83、分束器85、以及高倍率用透鏡86以高倍率用攝影元件ACC拍攝來自該對準標記AM之反射光。The alignment camera AC has an alignment light source 81 that emits the alignment detection light, a relay lens 82 that extends the detection light emitted from the alignment light source 81, and a half mirror 83 that is provided on the downstream side of the optical path of the relay lens 82. Further, the camera AC is provided with an objective lens 84 that irradiates the detection light that has passed through the half mirror 83 to the strip substrate FB. In addition, the alignment camera AC has a beam splitter 85 that splits the reflected light from the strip substrate FB, a high-magnification high-magnification lens 86, and a high-magnification imaging element ACC, and can measure the through hole TH with high precision. The narrow area. High-magnification imaging elements such as ACC MOS or CCD. That is, the alignment camera AC irradiates the alignment mark AM on the strip substrate FB via the half mirror 83 and the objective lens 84 by the irradiation of the detection light, via the half mirror 83, the beam splitter 85, and the lens for high magnification. 86 The reflected light from the alignment mark AM is taken with a photographic element ACC at a high magnification.
<粗對準攝影機之構成><Structure of coarse alignment camera>
其次說明粗對準攝影機RA。粗對準攝影機RA係檢測設於帶狀基板FB之四個貫通孔TH之位置。此粗對準攝影機RA，係為了供對準攝影機AC經由貫通孔TH檢測基板側AIS標記93而設置。粗對準攝影機RA係與對準攝影機AC同樣地，在交互排列之投影光學系統PL之間以與帶狀基板FB對向之方式在Y軸方向排列設有兩個或四個。Next, the coarse alignment camera RA will be described. The coarse alignment camera RA detects the position of the four through holes TH provided in the strip substrate FB. This coarse alignment camera RA is provided for the alignment camera AC to detect the substrate side AIS mark 93 via the through hole TH. Similarly to the alignment camera AC, the coarse alignment camera RA is provided with two or four in the Y-axis direction so as to face the strip substrate FB between the mutually arranged projection optical systems PL.
粗對準攝影機RA由於係共用對準攝影機AC之光源，因此從對準用光源81至物鏡84為止之構成係與對準攝影機AC相同。粗對準攝影機RA具有使來自帶狀基板FB之反射光反射之反射鏡87與低倍率之低倍率用透鏡88，以及低倍率用攝影元件RCC，而能測量帶狀基板FB之寬廣區域。低倍率用攝影元件RCC亦係MOS或CCD等之二維影像元件。亦即，粗對準攝影機RA係藉由檢測光之照射，經由半反射鏡83及物鏡84照射帶狀基板FB上之貫通孔TH及其周邊。接著，經由半反射鏡83及低倍率用透鏡88等以低倍率用攝影元件RCC拍攝來自該貫通孔TH周邊之反射光。Since the coarse alignment camera RA shares the light source of the alignment camera AC, the configuration from the alignment light source 81 to the objective lens 84 is the same as that of the alignment camera AC. The coarse alignment camera RA has a mirror 87 that reflects reflected light from the strip substrate FB, a low-magnification lens 88 having a low magnification, and a low-magnification imaging element RCC, and can measure a wide region of the strip substrate FB. The low-magnification imaging element RCC is also a two-dimensional image element such as MOS or CCD. In other words, the coarse alignment camera RA irradiates the through holes TH on the strip substrate FB and its periphery via the half mirror 83 and the objective lens 84 by the irradiation of the detection light. Then, the reflected light from the periphery of the through hole TH is imaged by the imaging element RCC at a low magnification by the half mirror 83 and the low magnification lens 88 or the like.
<粗對準攝影機對貫通孔之檢測><Detection of the through hole by the coarse alignment camera>
圖4係顯示藉由粗對準攝影機RA檢測貫通孔TH之狀態之概念圖。圖4(a)係其俯視概念圖，圖4(b)係從X軸方向觀看之概略側視圖。Fig. 4 is a conceptual diagram showing a state in which the through hole TH is detected by the coarse alignment camera RA. Fig. 4(a) is a plan view in plan view, and Fig. 4(b) is a schematic side view seen from the X-axis direction.
此外，本實施形態中之粗對準攝影機RA係於Y軸方向排列配置有兩個，以檢測帶狀基板FB兩端側之兩個貫通孔TH。由於四個貫通孔TH大致於X軸方向形成於相同位置，因此不須對應四個貫通孔TH而準備四個粗對準攝影機RA，亦可僅需一個。Further, in the present embodiment, the coarse alignment camera RA is arranged in two in the Y-axis direction to detect the two through holes TH on both end sides of the strip substrate FB. Since the four through holes TH are formed at substantially the same position in the X-axis direction, the four coarse alignment cameras RA are not required to be corresponding to the four through holes TH, and only one of them is required.
如圖4(b)所示，在帶狀基板FB與基板載台FBS於Z軸方向分離既定距離之狀態下，藉由供應滾筒FR及捲繞滾筒WR(參照圖1)將帶狀基板FB移送於X軸方向。供應滾筒FR及捲繞滾筒WR，在藉由穿孔器10形成之貫通孔TH來到緊挨粗對準攝影機RA之下方的位置即停止帶狀基板FB之移送。As shown in FIG. 4(b), the strip substrate FB is wound by the supply roller FR and the winding roller WR (see FIG. 1) in a state where the strip substrate FB and the substrate stage FBS are separated by a predetermined distance in the Z-axis direction. Transfer to the X axis direction. The supply roller FR and the winding roller WR stop the transfer of the strip substrate FB at a position immediately below the coarse alignment camera RA by the through hole TH formed by the punch 10 .
圖4(a)係顯示貫通孔TH來到緊挨粗對準攝影機RA之下方之狀態。在此狀態下，粗對準攝影機RA係照射檢測光，接著，粗對準攝影機RA經由物鏡84及低倍率用透鏡88等以低倍率用攝影元件RCC拍攝來自貫通孔TH周邊之反射光。Fig. 4(a) shows a state in which the through hole TH comes close to the bottom of the camera RA. In this state, the coarse alignment camera RA irradiates the detection light, and then the coarse alignment camera RA images the reflection light from the periphery of the through hole TH by the imaging element RCC at a low magnification via the objective lens 84 and the low magnification lens 88.
粗對準攝影機RA根據低倍率用攝影元件RCC所拍攝之影像，從貫通孔TH與其周邊之邊緣資訊求出貫通孔TH之座標值。此外，關於貫通孔TH之座標值之求取方法，亦可係藉由影像處理求出貫通孔TH之中心位置，或藉由與已儲存之模板資訊之圖案匹配法來求取。未圖示之控制裝置，係使用已求得之貫通孔TH之座標值求出修正參數。接著，控制裝置係對供應滾筒FR及捲繞滾筒WR(參照圖1)賦予修正參數以使貫通孔TH中心一致於基準構件95之基板側AIS標記93之位置。The coarse alignment camera RA obtains the coordinate value of the through hole TH from the through hole TH and the peripheral edge information thereof based on the image captured by the imaging element RCC at a low magnification. Further, the method of obtaining the coordinate value of the through hole TH may be obtained by image processing to determine the center position of the through hole TH or by pattern matching with the stored template information. The control device (not shown) obtains the correction parameter using the coordinate value of the obtained through hole TH. Next, the control device applies correction parameters to the supply roller FR and the winding drum WR (see FIG. 1) such that the center of the through hole TH coincides with the position of the substrate-side AIS mark 93 of the reference member 95.
<對準攝影機對基板側AIS標記之檢測><Alignment of the camera to the AIS mark on the substrate side>
圖5係顯示藉由對準攝影機AC檢測基板側AIS標記93之狀態之概念圖。圖5(a)係其俯視概念圖，圖5(b)係從X軸方向觀看之概略側視圖。Fig. 5 is a conceptual diagram showing a state in which the substrate side AIS mark 93 is detected by the alignment camera AC. Fig. 5(a) is a plan view in plan view, and Fig. 5(b) is a schematic side view seen from the X-axis direction.
如上所述，藉由粗對準攝影機RA求出貫通孔TH之座標值，對供應滾筒FR及捲繞滾筒WR從控制裝置賦予修正參數。藉此，帶狀基板FB被往X軸方向移送至貫通孔TH與基板側AIS標記93之位置一致之位置。能防止貫通孔TH不在基板側AIS標記93上導致對準攝影機AC無法檢測基板側AIS標記93之狀況。又，如圖5(b)所示，成為帶狀基板FB真空吸附於基板載台FBS之狀態。As described above, the coordinate value of the through hole TH is obtained by the coarse alignment camera RA, and the correction parameters are given to the supply roller FR and the winding drum WR from the control device. Thereby, the strip substrate FB is transferred in the X-axis direction to a position where the through hole TH coincides with the position of the substrate-side AIS mark 93. It is possible to prevent the through hole TH from being on the substrate side AIS mark 93, resulting in a situation in which the alignment camera AC cannot detect the substrate side AIS mark 93. Further, as shown in FIG. 5(b), the strip substrate FB is vacuum-adsorbed to the substrate stage FBS.
圖5(a)係顯示貫通孔TH來到緊挨對準攝影機AC之下方之狀態。在此狀態下，對準攝影機AC係照射檢測光，接著，對準攝影機AC經由物鏡84及高倍率用透鏡86等以高倍率用攝影元件ACC拍攝來自基板側AIS標記93之反射光。Fig. 5(a) shows a state in which the through hole TH comes close to the camera AC. In this state, the alignment camera AC emits the detection light, and then the alignment camera AC captures the reflected light from the substrate-side AIS mark 93 by the imaging device ACC at a high magnification via the objective lens 84 and the high-magnification lens 86.
對準攝影機AC根據高倍率用攝影元件ACC所拍攝之影像求出基板側AIS標記93之座標值。此外，關於基板側AIS標記93之座標值之求取方法，亦可係藉由影像處理求出基板側AIS標記93之中心位置，或藉由與已儲存之模板資訊之圖案匹配法來求取。又，具備基板側AIS標記93之基板載台FBS之位置，係藉由雷射干涉儀MM(參照圖1)來測定。因此，未圖示之控制裝置，係使用已求得之基板側AIS標記93之座標值及雷射干涉儀MM之測定值以對準攝影機AC之位置為基準求出基板側AIS標記93之位置。The alignment camera AC obtains the coordinate value of the substrate-side AIS mark 93 from the image captured by the imaging element ACC at a high magnification. Further, the method of determining the coordinate value of the AIS mark 93 on the substrate side may be obtained by image processing to determine the center position of the AIS mark 93 on the substrate side, or by pattern matching with the stored template information. . Further, the position of the substrate stage FBS including the substrate-side AIS mark 93 is measured by a laser interferometer MM (see FIG. 1). Therefore, the control device (not shown) obtains the position of the substrate-side AIS mark 93 based on the coordinate value of the obtained substrate-side AIS mark 93 and the measured value of the laser interferometer MM with reference to the position of the camera AC. .
<自基線測量至曝光為止之動作：第1例><Action from baseline measurement to exposure: first example>
本實施形態中，在檢測對準標記AM時，係事先測量光罩M與對準攝影機AC之相對位置即基線量。In the present embodiment, when the alignment mark AM is detected, the relative position, that is, the baseline amount of the mask M and the alignment camera AC, is measured in advance.
圖6係藉由粗對準攝影機RA自貫通孔TH之檢測至曝光結束之流程圖。圖7及圖8係顯示自貫通孔TH之檢測至曝光結束之主要動作之概念側視圖。Fig. 6 is a flow chart from the detection of the through-hole TH by the coarse alignment camera RA to the end of exposure. 7 and 8 are conceptual side views showing main operations from the detection of the through hole TH to the end of exposure.
步驟S111中，係在帶狀基板FB與基板載台FBS於Z軸方向分離之狀態下，藉由供應滾筒FR及捲繞滾筒WR(參照圖1)將帶狀基板FB移送於X軸方向。移送來之帶狀基板FB之貫通孔TH，係暫時在粗對準攝影機RA之下側停止。接著，粗對準攝影機RA檢測帶狀基板FB之貫通孔TH。供應滾筒FR及捲繞滾筒WR係移送帶狀基板FB。此時，設置基準構件95之基板載台FBS配置於初期位置。藉此，貫通孔TH係定位於基準構件95之基板側AIS標記93上方。In step S111, the strip substrate FB is transferred to the X-axis direction by the supply roller FR and the winding drum WR (see FIG. 1) in a state where the strip substrate FB and the substrate stage FBS are separated in the Z-axis direction. The through hole TH of the strip substrate FB transferred is temporarily stopped below the coarse alignment camera RA. Next, the coarse alignment camera RA detects the through hole TH of the strip substrate FB. The supply roller FR and the winding drum WR transfer the strip substrate FB. At this time, the substrate stage FBS on which the reference member 95 is provided is disposed at the initial position. Thereby, the through hole TH is positioned above the substrate side AIS mark 93 of the reference member 95.
步驟S113中，在既定位置停止之基板載台FBS係藉由高度調整部26上升，帶狀基板FB與基板載台FBS彼此接觸。接著，基板載台FBS之真空吸附孔21係吸附帶狀基板FB。In step S113, the substrate stage FBS stopped at the predetermined position is raised by the height adjusting unit 26, and the strip substrate FB and the substrate stage FBS are in contact with each other. Next, the vacuum adsorption hole 21 of the substrate stage FBS adsorbs the strip substrate FB.
步驟S114至S117中，係測量圖案構件即光罩M之光罩側AIS標記91與基板載台FBS之基板側AIS標記93之位置關係、亦即光罩M與對準攝影機AC之相對位置即基線量。In steps S114 to S117, the positional relationship between the mask side AIS mark 91 of the mask M and the substrate side AIS mark 93 of the substrate stage FBS, that is, the relative position of the mask M and the alignment camera AC, is measured. Baseline amount.
步驟S114中，吸附有帶狀基板FB之基板載台FBS將基板側AIS標記93移動至緊挨對準攝影機AC之下方。此時，供應滾筒FR及捲繞滾筒WR係配合基板載台FBS之移動而旋轉。藉由此帶狀基板FB之移動，對準攝影機AC係經由貫通孔TH檢測基板側AIS標記93。此時，基板載台FBS之X軸方向及Y軸方向之位置藉由雷射干涉儀MM測量。藉此，能取得對準攝影機AC與基板側AIS標記93之相對位置相關之資訊。圖7(a)係顯示對準攝影機AC經由貫通孔TH檢測基板側AIS標記93之狀態。In step S114, the substrate stage FBS on which the strip substrate FB is adsorbed moves the substrate side AIS mark 93 to the lower side of the alignment camera AC. At this time, the supply roller FR and the winding drum WR rotate in accordance with the movement of the substrate stage FBS. By the movement of the strip substrate FB, the alignment camera AC detects the substrate side AIS mark 93 via the through hole TH. At this time, the positions of the substrate stage FBS in the X-axis direction and the Y-axis direction are measured by the laser interferometer MM. Thereby, information relating to the relative position of the camera AC and the AIS mark 93 on the substrate side can be obtained. Fig. 7(a) shows a state in which the alignment camera AC detects the substrate-side AIS mark 93 via the through hole TH.
步驟S115中，吸附有帶狀基板FB係移動，而使基板側AIS標記93來到緊挨投影光學系統PL之下方。此時，供應滾筒FR及捲繞滾筒WR係配合基板載台FBS之移動而旋轉。In step S115, the strip substrate FB is moved, and the substrate side AIS mark 93 is brought to the lower side of the projection optical system PL. At this time, the supply roller FR and the winding drum WR rotate in accordance with the movement of the substrate stage FBS.
步驟S116中，藉由所謂經由透鏡(TTL)方式，以AIS攝影元件99檢測光罩M之光罩側AIS標記91與基板載台FBS上之基板側AIS標記93。更具體而言，通過光罩側AIS標記91之照明光係通過投影光學系統PL而通過貫通孔TH照明基板側AIS標記93。AIS攝影元件99，係經由透鏡系統97拍攝光罩側AIS標記91與基板側AIS標記93。此時，光罩載台MST及基板載台FBS之X軸方向及Y軸方向之位置藉由雷射干涉儀LM及雷射干涉儀MM測量。藉此，能取得圖案構件即光罩M與基板側AIS標記93之相對位置相關之資訊。圖7(b)係顯示AIS攝影元件99經由貫通孔TH檢測光罩側AIS標記91及基板側AIS標記93之狀態。In step S116, the AIS imaging element 99 detects the mask side AIS mark 91 of the mask M and the substrate side AIS mark 93 on the substrate stage FBS by means of a TTL method. More specifically, the illumination light system passing through the mask side AIS mark 91 illuminates the substrate side AIS mark 93 through the through hole TH through the projection optical system PL. The AIS imaging element 99 captures the mask side AIS mark 91 and the substrate side AIS mark 93 via the lens system 97. At this time, the positions of the mask stage MST and the substrate stage FBS in the X-axis direction and the Y-axis direction are measured by the laser interferometer LM and the laser interferometer MM. Thereby, information relating to the relative position of the mask M, that is, the mask M and the substrate-side AIS mark 93 can be obtained. FIG. 7(b) shows a state in which the AIS imaging element 99 detects the mask side AIS mark 91 and the substrate side AIS mark 93 via the through hole TH.
步驟S117中，關於四個對準攝影機AC，亦可根據步驟S114及S116之檢測結果算出光罩M之位置與對準攝影機AC之位置之相對位置關係、亦即基線量。In step S117, regarding the four alignment cameras AC, the relative positional relationship between the position of the mask M and the position of the alignment camera AC, that is, the baseline amount, may be calculated based on the detection results of steps S114 and S116.
此外，步驟S114至S117之基線量之測量可在每次曝光處理開始時進行，或亦可依預先設定之既定批量數或捲繞成一個圓筒狀之帶狀基板FB之更換時進行。Further, the measurement of the baseline amount of steps S114 to S117 may be performed at the beginning of each exposure process, or may be performed at a predetermined batch number or a replacement of a strip-shaped substrate FB wound into a cylindrical shape.
次一步驟S118中，上述四個對準攝影機AC係檢測對準標記AM(F)。如圖5所示，於曝光區域EA周邊形成有複數個對準標記AM(AM(F)、AM(B)、AM(S))。其中，係檢測次一曝光之曝光區域EA之前頭側之對準標記AM(AM(F)。In the next step S118, the four alignment cameras AC detect the alignment mark AM(F). As shown in FIG. 5, a plurality of alignment marks AM (AM (F), AM (B), AM (S)) are formed around the exposure area EA. Wherein, the alignment mark AM (AM(F) of the head side before the exposure area EA of the next exposure is detected.
此時，亦藉由雷射干涉儀MM檢測基板載台FBS之X軸方向及Y軸方向之位置以及以Z軸方向為中心之θZ方向之旋轉。此外，此圖7(b)中，係在AIS攝影元件99可經由貫通孔TH檢測基板側AIS標記93之狀態下，由對準攝影機AC檢測對準標記AM。At this time, the position of the substrate stage FBS in the X-axis direction and the Y-axis direction and the rotation in the θZ direction centering on the Z-axis direction are also detected by the laser interferometer MM. Further, in FIG. 7(b), the alignment mark AM is detected by the alignment camera AC in a state where the AIS imaging element 99 can detect the substrate-side AIS mark 93 via the through-hole TH.
步驟S119中，吸附有帶狀基板FB之基板載台FBS係移動，四個對準攝影機AC來到圖5所示之後頭側對準標記AM(B)之位置。此時，供應滾筒FR及捲繞滾筒WR係配合基板載台FBS之移動而旋轉。In step S119, the substrate stage FBS on which the strip substrate FB is adsorbed moves, and the four alignment cameras AC come to the position of the head side alignment mark AM (B) shown in FIG. At this time, the supply roller FR and the winding drum WR rotate in accordance with the movement of the substrate stage FBS.
步驟S120中，四個對準攝影機AC係檢測後頭側之對準標記AM(B)。於曝光區域EA周邊形成有複數個對準標記AM(B)。其中，係檢測次一曝光之曝光區域EA之後頭側之對準標記AM(B)。圖7(c)係顯示藉由對準攝影機AC檢測後頭側之對準標記AM(B)之狀態。In step S120, the four alignment cameras AC detect the alignment mark AM (B) on the rear side. A plurality of alignment marks AM(B) are formed around the exposure area EA. Wherein, the alignment mark AM(B) on the head side after the exposure area EA of the next exposure is detected. Fig. 7(c) shows the state of the alignment mark AM (B) on the back side by the alignment camera AC.
此外，曝光區域EA橫向側之對準標記AM(S)亦可於步驟S118至步驟S120為止由兩個對準攝影機AC檢測。藉由檢測出所有對準標記AM(AM(F)、AM(B)、AM(S))，而能算出帶狀基板FB之曝光區域EA伸縮了多少。Further, the alignment mark AM(S) on the lateral side of the exposure area EA may be detected by the two alignment cameras AC from step S118 to step S120. By detecting all the alignment marks AM (AM(F), AM(B), AM(S)), it is possible to calculate how much the exposure area EA of the strip substrate FB is stretched.
步驟S121中，根據在步驟S117求出之基線量之測量結果及步驟S118及S120所求出之對準標記AM之檢測結果，使基板載台FBS移動至藉由投影光學系統PL產生之光罩M之圖案之投影像來到曝光區域EA之一端。此時，基板載台FBS不僅移動於X軸方向亦移動於Y軸方向及θZ方向。又，供應滾筒FR及捲繞滾筒WR係配合基板載台FBS之移動而旋轉。圖8(d)係顯示藉投影光學系統PL產生之投影像來到曝光區域EA之一端之狀態。In step S121, the substrate stage FBS is moved to the mask produced by the projection optical system PL based on the measurement result of the baseline amount obtained in step S117 and the detection result of the alignment mark AM obtained in steps S118 and S120. The cast image of the M pattern comes to one end of the exposure area EA. At this time, the substrate stage FBS moves not only in the X-axis direction but also in the Y-axis direction and the θZ direction. Further, the supply roller FR and the winding drum WR rotate in accordance with the movement of the substrate stage FBS. Fig. 8(d) shows a state in which the projection image generated by the projection optical system PL comes to one end of the exposure area EA.
步驟S122中，光罩M與基板載台FBS係同步掃描，藉由照射曝光用光EL進行曝光。此時，供應滾筒FR及捲繞滾筒WR亦配合基板載台FBS之動作而旋轉。In step S122, the mask M and the substrate stage FBS are scanned in synchronization, and exposure is performed by irradiating the exposure light EL. At this time, the supply roller FR and the winding drum WR also rotate in accordance with the operation of the substrate stage FBS.
步驟S123中，在曝光區域EA之曝光結束後，即解除帶狀基板FB之真空吸附。接著，基板載台FBS藉由高度調整部26而下降。圖8(e)係顯示曝光區域EA已結束曝光而基板載台FBS已下降之狀態。步驟S124中，係由供應滾筒FR及捲繞滾筒WR移送帶狀基板FB，以使帶狀基板FB之貫通孔TH移送至粗對準攝影機RA下側。又，基板載台FBS係移動至初期位置。In step S123, after the exposure of the exposure area EA is completed, the vacuum adsorption of the strip substrate FB is released. Next, the substrate stage FBS is lowered by the height adjustment unit 26. Fig. 8(e) shows a state in which the exposure area EA has finished exposure and the substrate stage FBS has been lowered. In step S124, the strip substrate FB is transferred by the supply roller FR and the winding drum WR so that the through hole TH of the strip substrate FB is transferred to the lower side of the coarse alignment camera RA. Further, the substrate stage FBS is moved to the initial position.
此外，圖6至圖8之動作中，對準攝影機AC係檢測前頭側之對準標記AM(F)、橫向側之對準標記AM(S)及後頭側之對準標記AM(B)等。然而，當對準攝影機AC僅檢測前頭側之對準標記AM(F)、或僅檢測前頭側之對準標記AM(F)及橫向側之對準標記AM(S)時，亦可配合曝光區域EA之重疊精度變更適當動作。Further, in the operations of FIGS. 6 to 8, the alignment camera AC detects the alignment mark AM (F) on the front side, the alignment mark AM (S) on the lateral side, and the alignment mark AM (B) on the rear side. . However, when the alignment camera AC detects only the alignment mark AM (F) on the front side, or only the alignment mark AM (F) on the front side and the alignment mark AM (S) on the lateral side, it is also possible to cooperate with the exposure. The overlap accuracy of the area EA is changed as appropriate.
<自基線測量至曝光為止之動作：第2例><Action from baseline measurement to exposure: second example>
與第1例不同地，第2例中，粗對準攝影機RA於Z軸方向配置一列、對準攝影機AC係於X軸方向配置兩列。遊圖10或圖11所示之於X軸方向配置成兩列之對準攝影機AC1及對準攝影機AC2分別檢測前頭側之對準標記AM(F)及後頭側之對準標記AM(B)。對準攝影機AC1與對準攝影機AC2之構成係相同，於X軸方向係從前頭側之對準標記AM(F)分離至後頭側之對準標記AM(B)。Unlike the first example, in the second example, the coarse alignment camera RA is arranged in one row in the Z-axis direction, and the alignment camera AC is arranged in two rows in the X-axis direction. The alignment camera AC1 and the alignment camera AC2 arranged in two rows in the X-axis direction shown in FIG. 10 or FIG. 11 respectively detect the alignment mark AM (F) on the front side and the alignment mark AM (B) on the rear side. . The alignment camera AC1 and the alignment camera AC2 have the same configuration, and are separated from the alignment mark AM (F) on the front side to the alignment mark AM (B) on the rear side in the X-axis direction.
圖9係藉由粗對準攝影機RA自貫通孔TH之檢測至曝光結束之流程圖。圖10及圖11，係顯示自貫通孔TH之檢測至曝光結束之主要動作之概念側視圖。Fig. 9 is a flow chart from the detection of the through-hole TH by the coarse alignment camera RA to the end of exposure. 10 and 11 are conceptual side views showing main operations from the detection of the through hole TH to the end of exposure.
步驟S311中，在帶狀基板FB與基板載台FBS於Z軸方向分離之狀態下，藉由供應滾筒FR及捲繞滾筒WR(參照圖1)將帶狀基板FB移送於X軸方向。移送來之帶狀基板FB之貫通孔TH，係暫時在粗對準攝影機RA之下側停止。接著，粗對準攝影機RA檢測帶狀基板FB之貫通孔TH。In step S311, the strip substrate FB is transferred to the X-axis direction by the supply roller FR and the winding roller WR (see FIG. 1) in a state where the strip substrate FB and the substrate stage FBS are separated in the Z-axis direction. The through hole TH of the strip substrate FB transferred is temporarily stopped below the coarse alignment camera RA. Next, the coarse alignment camera RA detects the through hole TH of the strip substrate FB.
步驟S312中，根據粗對準攝影機RA之貫通孔TH之檢測結果，由供應滾筒FR及捲繞滾筒WR移送帶狀基板FB。此時，設置基準構件95之基板載台FBS係配置於初期位置。藉此，貫通孔TH定位於基準構件95之基板側AIS標記93上方。In step S312, the strip substrate FB is transferred by the supply roller FR and the winding drum WR based on the detection result of the through hole TH of the coarse alignment camera RA. At this time, the substrate stage FBS in which the reference member 95 is provided is disposed at the initial position. Thereby, the through hole TH is positioned above the substrate side AIS mark 93 of the reference member 95.
步驟S313中，在既定位置停止之基板載台FBS係藉由高度調整部26上升，帶狀基板FB與基板載台FBS彼此接觸。接著，基板載台FBS之真空吸附孔21係吸附帶狀基板FB。In step S313, the substrate stage FBS stopped at the predetermined position is raised by the height adjusting unit 26, and the strip substrate FB and the substrate stage FBS are in contact with each other. Next, the vacuum adsorption hole 21 of the substrate stage FBS adsorbs the strip substrate FB.
步驟S314至S319中，係測量光罩M之位置與對準攝影機AC 1及對準攝影機AC2之相對位置關係、亦即光罩M與對準攝影機AC 1及對準攝影機AC2之相對位置即基線量。In steps S314 to S319, the relative positional relationship between the position of the photomask M and the alignment camera AC 1 and the alignment camera AC2, that is, the relative position of the mask M and the alignment camera AC 1 and the alignment camera AC2 is measured. Line quantity.
步驟S314中，吸附有帶狀基板FB之基板載台FBS將基板側AIS標記93移動至緊挨對準攝影機AC2之下方。藉由此帶狀基板FB之移動，對準攝影機AC2經由貫通孔TH檢測基板側AIS標記93。此時，基板載台FBS之X軸方向及Y軸方向之位置藉由雷射干涉儀MM測量。藉此，能取得對準攝影機AC與基板側AIS標記93之相對位置相關之資訊。圖10(a)係顯示對準攝影機AC2經由貫通孔TH檢測基板側AIS標記93之狀態。In step S314, the substrate stage FBS on which the strip substrate FB is adsorbed moves the substrate side AIS mark 93 to be immediately below the alignment camera AC2. By the movement of the strip substrate FB, the alignment camera AC2 detects the substrate side AIS mark 93 via the through hole TH. At this time, the positions of the substrate stage FBS in the X-axis direction and the Y-axis direction are measured by the laser interferometer MM. Thereby, information relating to the relative position of the camera AC and the AIS mark 93 on the substrate side can be obtained. FIG. 10(a) shows a state in which the alignment camera AC2 detects the substrate-side AIS mark 93 via the through hole TH.
步驟S315中，吸附有帶狀基板FB係移動，而使基板側AIS標記93來到緊挨對準攝影機AC1之下方。In step S315, the strip substrate FB is moved, and the substrate side AIS mark 93 is brought to the bottom of the alignment camera AC1.
步驟S316中，吸附有帶狀基板FB之基板載台FBS將基板側AIS標記93移動至緊挨對準攝影機AC1之下方。藉由此帶狀基板FB之移動，對準攝影機AC1經由貫通孔TH檢測基板側AIS標記93。此時，基板載台FBS之X軸方向及Y軸方向之位置藉由雷射干涉儀MM測量。圖10(b)係顯示對準攝影機AC1經由貫通孔TH檢測基板側AIS標記93之狀態。In step S316, the substrate stage FBS on which the strip substrate FB is adsorbed moves the substrate side AIS mark 93 to be immediately below the alignment camera AC1. By the movement of the strip substrate FB, the alignment camera AC1 detects the substrate side AIS mark 93 via the through hole TH. At this time, the positions of the substrate stage FBS in the X-axis direction and the Y-axis direction are measured by the laser interferometer MM. FIG. 10(b) shows a state in which the alignment camera AC1 detects the substrate-side AIS mark 93 via the through hole TH.
步驟S317中，吸附有帶狀基板FB係移動，而使基板側AIS標記93來到緊挨投影光學系統PL之下方。In step S317, the strip substrate FB is moved, and the substrate side AIS mark 93 is brought under the projection optical system PL.
步驟S318中，藉由所謂經由透鏡(TTL)方式，以AIS攝影元件99檢測光罩M之光罩側AIS標記91與基板載台FBS上之基板側AIS標記93。根據此檢測結果求出光罩M與基板載台FBS之相對位置。此時，光罩載台MST及基板載台FBS之X軸方向及Y軸方向之位置藉由雷射干涉儀LM及雷射干涉儀MM測量。藉此求得圖案構件即光罩M與基板側AIS標記93之相對位置相關之資訊。圖10(c)係顯示AIS攝影元件99經由貫通孔TH檢測光罩側AIS標記91及基板側AIS標記93之狀態。In step S318, the AIS imaging element 99 detects the mask side AIS mark 91 of the mask M and the substrate side AIS mark 93 on the substrate stage FBS by means of a lens (TTL) method. Based on the detection result, the relative position of the mask M and the substrate stage FBS is obtained. At this time, the positions of the mask stage MST and the substrate stage FBS in the X-axis direction and the Y-axis direction are measured by the laser interferometer LM and the laser interferometer MM. Thereby, information on the relative position of the mask member, that is, the mask M and the substrate-side AIS mark 93, is obtained. FIG. 10(c) shows a state in which the AIS imaging element 99 detects the mask side AIS mark 91 and the substrate side AIS mark 93 via the through hole TH.
步驟S319中，關於對準攝影機AC1及AC2，能根據步驟S314及S318之檢測結果算出光罩M之位置與對準攝影機AC1及AC2之位置之相對位置關係、亦即基線量。In step S319, with respect to the alignment cameras AC1 and AC2, the relative positional relationship between the position of the mask M and the positions of the alignment cameras AC1 and AC2, that is, the baseline amount, can be calculated based on the detection results of steps S314 and S318.
此外，步驟S314至S319之基線量之測量可在每次曝光處理開始時進行，或亦可依預先設定之既定批量數或捲繞成一個圓筒狀之帶狀基板FB之更換時進行。Further, the measurement of the baseline amount of steps S314 to S319 may be performed at the beginning of each exposure process, or may be performed at a predetermined batch number or a replacement of a strip-shaped substrate FB wound into a cylindrical shape.
次一步驟S320中，上述對準攝影機AC1及對準攝影機AC2係同時檢測形成於帶狀基板FB之前頭側之對準標記AM(F)及後頭側之對準標記AM(B)。In the next step S320, the alignment camera AC1 and the alignment camera AC2 simultaneously detect the alignment mark AM (F) formed on the head side before the strip substrate FB and the alignment mark AM (B) on the rear side.
此時，亦藉由雷射干涉儀MM檢測基板載台FBS之X軸方向及Y軸方向之位置以及以Z軸方向為中心之θZ方向之旋轉。圖10(c)係顯示藉由對準攝影機AC1檢測前頭側之對準標記AM(F)、藉由對準攝影機AC2檢測後頭側之對準標記AM(B)之狀態。此外，圖10(c)中，可在AIS攝影元件99經由貫通孔TH檢測基板側AIS標記93之狀態下由對準攝影機AC1及AC2檢測對準標記AM(F)及AM(B)。At this time, the position of the substrate stage FBS in the X-axis direction and the Y-axis direction and the rotation in the θZ direction centering on the Z-axis direction are also detected by the laser interferometer MM. Fig. 10 (c) shows a state in which the alignment mark AM (F) on the front side is detected by the alignment camera AC1, and the alignment mark AM (B) on the rear side is detected by the alignment camera AC2. Further, in FIG. 10(c), the alignment marks AM(F) and AM(B) can be detected by the alignment cameras AC1 and AC2 in a state where the AIS imaging element 99 detects the substrate-side AIS mark 93 via the through hole TH.
此外，曝光區域EA橫向側之對準標記AM(S)亦可至步驟S320為止對準攝影機AC1及AC2檢測。藉由檢測出所有對準標記AM(AM(F)、AM(B)、AM(S))，而能算出帶狀基板FB之曝光區域EA伸縮了多少。Further, the alignment mark AM(S) on the lateral side of the exposure area EA may be detected by the alignment cameras AC1 and AC2 up to step S320. By detecting all the alignment marks AM (AM(F), AM(B), AM(S)), it is possible to calculate how much the exposure area EA of the strip substrate FB is stretched.
步驟S321中，根據在步驟S319求出之基線量之測量結果及步驟S320所求出之對準標記AM(F)及AM(B)之檢測結果，使基板載台FBS移動至藉由投影光學系統PL產生之光罩M之圖案之投影像來到曝光區域EA之一端。此時，基板載台FBS不僅移動於X軸方向亦移動於Y軸方向及θZ方向。圖11(d)係顯示藉投影光學系統PL產生之投影像來到曝光區域EA之一端之狀態。In step S321, the substrate stage FBS is moved to the projection optical by the measurement result of the baseline amount obtained in step S319 and the detection results of the alignment marks AM(F) and AM(B) obtained in step S320. The projected image of the pattern of the mask M produced by the system PL comes to one end of the exposure area EA. At this time, the substrate stage FBS moves not only in the X-axis direction but also in the Y-axis direction and the θZ direction. Fig. 11 (d) shows a state in which the projection image generated by the projection optical system PL comes to one end of the exposure area EA.
步驟S322中，光罩M與基板載台FBS係同步掃描，藉由照射曝光用光EL進行曝光。此時，供應滾筒FR及捲繞滾筒WR亦與基板載台FBS之動作同步地旋轉。In step S322, the mask M and the substrate stage FBS are scanned in synchronization, and exposure is performed by irradiating the exposure light EL. At this time, the supply roller FR and the winding drum WR also rotate in synchronization with the operation of the substrate stage FBS.
步驟S323中，在曝光區域EA之曝光結束後，即解除帶狀基板FB之真空吸附。接著，基板載台FBS藉由高度調整部26而下降。圖11(e)係顯示曝光區域EA已結束曝光而基板載台FBS已下降之狀態。步驟S324中，係由供應滾筒FR及捲繞滾筒WR移送帶狀基板FB，以使帶狀基板FB之貫通孔TH移送至粗對準攝影機RA下側。又，基板載台FBS係移動至初期位置。In step S323, after the exposure of the exposure area EA is completed, the vacuum adsorption of the strip substrate FB is released. Next, the substrate stage FBS is lowered by the height adjustment unit 26. Fig. 11(e) shows a state in which the exposure area EA has finished exposure and the substrate stage FBS has been lowered. In step S324, the strip substrate FB is transferred by the supply roller FR and the winding drum WR so that the through hole TH of the strip substrate FB is transferred to the lower side of the coarse alignment camera RA. Further, the substrate stage FBS is moved to the initial position.
此外，上述實施形態中，雖說明係使用描繪於石英玻璃之光罩M來作為圖案構件，但除了光罩以外，使用具有複數個小反射鏡之DMD(Direct Micromirror Device)元件時，亦可適用本實施形態之對準方法。Further, in the above-described embodiment, the photomask M drawn on the quartz glass is used as the pattern member. However, when a DMD (Direct Micromirror Device) element having a plurality of small mirrors is used in addition to the mask, it is also applicable. The alignment method of this embodiment.
10．．．穿孔器10. . . Perforator
21．．．真空吸附孔twenty one. . . Vacuum adsorption hole
26．．．高度調整部26. . . Height adjustment department
28．．．基板載台移動部28. . . Substrate stage moving part
30．．．壓接固定部30. . . Crimp fixing part
33．．．活塞部33. . . Piston part
35．．．壓接板35. . . Crimp plate
81．．．對準用光源81. . . Alignment light source
82．．．中繼透鏡82. . . Relay lens
83．．．半反射鏡83. . . Half mirror
84．．．物鏡84. . . Objective lens
85．．．分束器85. . . Beam splitter
86．．．高倍率用透鏡86. . . High magnification lens
87．．．反射鏡87. . . Reflector
88．．．低倍率用透鏡88. . . Low magnification lens
91．．．光罩側AIS標記91. . . Mask side AIS mark
93．．．基板側AIS標記93. . . Substrate side AIS mark
95．．．基準構件95. . . Reference member
97．．．透鏡系統97. . . Lens system
99．．．AIS攝影元件99. . . AIS photographic element
AC,AC1,AC2．．．對準攝影機AC, AC1, AC2. . . Aligning camera
ACC．．．高倍率用攝影元件ACC. . . High magnification photographic element
AM．．．對準標記AM. . . Alignment mark
EA．．．曝光區域EA. . . Exposure area
EL．．．曝光用光EL. . . Exposure light
EX．．．曝光裝置EX. . . Exposure device
FB．．．基板FB. . . Substrate
FBS．．．基板載台FBS. . . Substrate stage
FR．．．供應滾筒FR. . . Supply roller
LM,LMx．．．雷射干涉儀LM, LMx. . . Laser interferometer
M．．．光罩M. . . Mask
MST．．．光罩載台MST. . . Photomask stage
MM,MMx．．．雷射干涉儀MM, MMx. . . Laser interferometer
PI．．．投影像PI. . . Cast image
PL．．．投影光學系統PL. . . Projection optical system
RA．．．粗對準攝影機RA. . . Thick alignment camera
RCC．．．低倍率用攝影元件RCC. . . Low magnification imaging element
TH．．．貫通孔TH. . . Through hole
WR．．．捲繞滾筒WR. . . Winding roller
圖1(a)，係顯示本實施形態之曝光裝置EX之概略俯視圖。圖1(b)係曝光裝置EX之概略側視圖。Fig. 1(a) is a schematic plan view showing an exposure apparatus EX of the present embodiment. Fig. 1(b) is a schematic side view of the exposure apparatus EX.
圖2係放大以圖1(b)之B所示之範圍之概念側視圖。Figure 2 is a conceptual side view enlarging the range shown in B of Figure 1(b).
圖3係顯示支撐帶狀基板FB之基板載台FBS之另一實施例的概念圖。圖3(a)係顯示本實施形態之基板載台FBS之概略俯視圖。圖3(b)係曝光裝置EX之概略側視圖。Fig. 3 is a conceptual view showing another embodiment of the substrate stage FBS supporting the strip substrate FB. Fig. 3 (a) is a schematic plan view showing the substrate stage FBS of the embodiment. Fig. 3 (b) is a schematic side view of the exposure apparatus EX.
圖4係顯示藉由粗對準攝影機RA檢測貫通孔TH之狀態之概念圖。圖4(a)係其俯視概念圖，圖4(b)係從X軸方向觀看之概略側視圖。Fig. 4 is a conceptual diagram showing a state in which the through hole TH is detected by the coarse alignment camera RA. Fig. 4(a) is a plan view in plan view, and Fig. 4(b) is a schematic side view seen from the X-axis direction.
圖5係顯示藉由對準攝影機AC檢測基板側AIS標記93之狀態之概念圖。圖5(a)係其俯視概念圖，圖5(b)係從X軸方向觀看之概略側視圖。Fig. 5 is a conceptual diagram showing a state in which the substrate side AIS mark 93 is detected by the alignment camera AC. Fig. 5(a) is a plan view in plan view, and Fig. 5(b) is a schematic side view seen from the X-axis direction.
圖6係藉由粗對準攝影機RA自貫通孔TH之檢測至曝光結束之流程圖。Fig. 6 is a flow chart from the detection of the through-hole TH by the coarse alignment camera RA to the end of exposure.
圖7，係顯示自貫通孔TH之檢測至曝光結束之主要動作之概念側視圖。圖7(a)係顯示對準攝影機AC經由貫通孔TH檢測基板側AIS標記93之狀態。圖7(b)係顯示藉由對準攝影機AC檢測前頭側之對準標記AM(F)之狀態。圖7(c)係顯示藉由對準攝影機AC檢測後頭側之對準標記AM(B)之狀態。Fig. 7 is a conceptual side view showing the main operation from the detection of the through hole TH to the end of the exposure. Fig. 7(a) shows a state in which the alignment camera AC detects the substrate-side AIS mark 93 via the through hole TH. Fig. 7(b) shows a state in which the alignment mark AM (F) on the front side is detected by the alignment camera AC. Fig. 7(c) shows the state of the alignment mark AM (B) on the back side by the alignment camera AC.
圖8，係顯示自貫通孔TH之檢測至曝光結束之主要動作之概念側視圖。圖8(d)係顯示藉投影光學系統PL產生之投影像來到曝光區域EA之一端之狀態。圖8(e)係顯示曝光區域EA已結束曝光而基板載台FBS已下降之狀態。Fig. 8 is a conceptual side view showing the main operation from the detection of the through hole TH to the end of the exposure. Fig. 8(d) shows a state in which the projection image generated by the projection optical system PL comes to one end of the exposure area EA. Fig. 8(e) shows a state in which the exposure area EA has finished exposure and the substrate stage FBS has been lowered.
圖9係藉由粗對準攝影機RA自貫通孔TH之檢測至曝光結束之流程圖。Fig. 9 is a flow chart from the detection of the through-hole TH by the coarse alignment camera RA to the end of exposure.
圖10，係顯示自貫通孔TH之檢測至曝光結束之主要動作之概念側視圖。圖10(a)係顯示對準攝影機AC2經由貫通孔TH檢測基板側AIS標記93之狀態。圖10(b)係顯示對準攝影機AC1經由貫通孔TH檢測基板側AIS標記93之狀態。圖10(c)係顯示AIS攝影元件99經由貫通孔TH檢測光罩側AIS標記91及基板側AIS標記93之狀態。Fig. 10 is a conceptual side view showing the main operation from the detection of the through hole TH to the end of the exposure. FIG. 10(a) shows a state in which the alignment camera AC2 detects the substrate-side AIS mark 93 via the through hole TH. FIG. 10(b) shows a state in which the alignment camera AC1 detects the substrate-side AIS mark 93 via the through hole TH. FIG. 10(c) shows a state in which the AIS imaging element 99 detects the mask side AIS mark 91 and the substrate side AIS mark 93 via the through hole TH.
圖11，係顯示自貫通孔TH之檢測至曝光結束之主要動作之概念側視圖。圖11(d)係顯示藉投影光學系統PL產生之投影像來到曝光區域EA之一端之狀態。圖11(e)係顯示曝光區域EA已結束曝光而基板載台FBS已下降之狀態。Fig. 11 is a conceptual side view showing the main operation from the detection of the through hole TH to the end of the exposure. Fig. 11 (d) shows a state in which the projection image generated by the projection optical system PL comes to one end of the exposure area EA. Fig. 11(e) shows a state in which the exposure area EA has finished exposure and the substrate stage FBS has been lowered.
10．．．穿孔器10. . . Perforator
91．．．光罩側AIS標記91. . . Mask side AIS mark
93．．．基板側AIS標記93. . . Substrate side AIS mark
95．．．基準構件95. . . Reference member
AC．．．對準攝影機AC. . . Aligning camera
AM．．．對準標記AM. . . Alignment mark
EA．．．曝光區域EA. . . Exposure area
EL．．．曝光用光EL. . . Exposure light
EX．．．曝光裝置EX. . . Exposure device
FB．．．基板FB. . . Substrate
FBS．．．基板載台FBS. . . Substrate stage
FR．．．供應滾筒FR. . . Supply roller
LMx．．．雷射干涉儀LMx. . . Laser interferometer
M．．．光罩M. . . Mask
MST．．．光罩載台MST. . . Photomask stage
MMx．．．雷射干涉儀MMx. . . Laser interferometer
PI．．．投影像PI. . . Cast image
PL．．．投影光學系統PL. . . Projection optical system
RA．．．粗對準攝影機RA. . . Thick alignment camera
TH．．．貫通孔TH. . . Through hole
WR．．．捲繞滾筒WR. . . Winding roller
Claims (17)
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| JP2009016120 | 2009-01-28 |
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| JP (1) | JP5305251B2 (en) |
| TW (1) | TWI457718B (en) |
| WO (1) | WO2010087352A1 (en) |
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| WO2012144904A2 (en) | 2011-04-22 | 2012-10-26 | Mapper Lithography Ip B.V. | Position determination in a lithography system using a substrate having a partially reflective position mark |
| TWI571707B (en) | 2011-04-22 | 2017-02-21 | 瑪波微影Ｉｐ公司 | Lithography system for processing a target, such as a wafer, a method for operating a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system |
| JP5932023B2 (en) * | 2011-05-13 | 2016-06-08 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | Lithographic system for processing at least part of a target |
| TWI484536B (en) * | 2011-06-30 | 2015-05-11 | Toshiba Kk | Template substrate and method for manufacturing same |
| CN107077080B (en) * | 2015-01-15 | 2019-04-26 | 株式会社村田制作所 | Exposure device |
| CN108983552B (en) * | 2017-05-31 | 2020-01-24 | 上海微电子装备（集团）股份有限公司 | Moving-in and moving-out mechanism and photoetching machine workpiece table moving-in and moving-out device |
| JP6702404B2 (en) * | 2018-12-21 | 2020-06-03 | 株式会社ニコン | Device manufacturing system and device manufacturing method |
| CN113093487B (en) * | 2021-04-20 | 2024-01-30 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Mask alignment system, mask alignment method and lithographic apparatus |
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- 2010-01-27 JP JP2010548524A patent/JP5305251B2/en active Active
- 2010-01-27 WO PCT/JP2010/051006 patent/WO2010087352A1/en active Application Filing
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| JPH09274520A (en) * | 1996-04-04 | 1997-10-21 | Ushio Inc | Method and device for conveying/positioning band-shaped work |
| JPH10187937A (en) * | 1996-12-25 | 1998-07-21 | Ushio Inc | Projection and exposure apparatus for band-shaped work |
| JP2000305274A (en) * | 1999-04-20 | 2000-11-02 | Ushio Inc | Aligner |
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| Publication number | Publication date |
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| WO2010087352A1 (en) | 2010-08-05 |
| JPWO2010087352A1 (en) | 2012-08-02 |
| TW201035696A (en) | 2010-10-01 |
| JP5305251B2 (en) | 2013-10-02 |
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