TWI296846B - Self-trigger electrostatic discharge clamp circuit - Google Patents
Self-trigger electrostatic discharge clamp circuit Download PDFInfo
- Publication number
- TWI296846B TWI296846B TW94143165A TW94143165A TWI296846B TW I296846 B TWI296846 B TW I296846B TW 94143165 A TW94143165 A TW 94143165A TW 94143165 A TW94143165 A TW 94143165A TW I296846 B TWI296846 B TW I296846B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- self
- region
- electrostatic
- trigger
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
1296846 八、發明說明: 【發明所屬之技術領域】 本發明係關於靜電放電箝制電路(electrostatic discharge clamp circuit),特別是關於利用自我觸發之石夕控整流器(self_triggerSCR)來進 行靜電放電之靜電放電箝制電路。 【先前技術】 、 在互補式金氧半(CMOS)的製程裡,隨著電晶體閘極的氧化層越做 越薄及崩潰電壓越來越低,相對的靜電抵抗能力就越差,因此對靜電 保護電路的需求也就越來越高。 丨 $控整流ϋ在互補式金氧半的製程裡,通常擁有較低的保持電壓 (、hdd大約是IV左右)。當靜電放電在積體電路上時,若矽控整流器 =發導通,則靜電電荷透過雜紐赌出積體電路外,此時石夕^ f >二器所縛的功特ower=IESDXVhold)遠小於其他靜電保護元件,諸 杜=體:Λ補式金氧半電晶體、雙載子接面電晶體(BJT)、場氧化元 ㈣蝴目㈣[瓣峨抵抗 心互補式金氧半(deep sub-micro CM0S)製程裡’石夕控 彳VGltag雜常超過2GV,但是深次微米互補 > 般小於igv,因此德整流器本身並不適 為了靜電保護電路的應用,石夕控整流i須二 ί整日片上其他電路。接下來將介紹—些傳統應用石夕 控登/瓜裔做為靜電保護電路的一些例子。 電路If ί $ =G. 5,G12,317揭露—傳統雜整流器靜電保護 控整流物则。歸 12。在N井區域12上具有一 p+區域_和:&冗== 流,。另外,在p型基底上具有一=域= 1Wf,^ 尘暴底10和Ν井12的接觸介面和^^井ί2去觸 1296846 «====電t此電路具有較高的導通電壓,並不適合 整流露一 第圖係顯示此橫向結構矽控整流器靜電保護 -圖。此石夕控整流器係建立於ρ型基底2〇上。在ρ型基底 20上具有- Ν井區域22。在Ν井區域22上具有一 ρ+區域撕和一 N+區域24a’此兩區域形成矽控整流器的陽極。另外,在p型基底上 ,有- P+區"域24e和- N+區域24d,此兩區域形成石夕控整流器的陰 極。此電細大·㈣妓在p縣底2G和N井22的接面上增加 ,了一 N+區域24c ’因為p型基底2〇和N+區域24c的崩潰電壓較低, ,0.35,的製程上,約12v,所以此改良型之石夕控整流器的導通電 垒也因]Ifc而降低。故此電路能適度地應用在靜電保護電路。 ^美國專利U.s· Pat· No· 5,453,384揭露一低電壓觸發之石夕控整流器 靜電保濩電路,第3圖係顯示此低電壓觸發之石夕控整流器靜電保護電 路的剖面圖。相較於第2圖的電路,第3圖的電路已有大幅度的改ϋ良。 此矽控整流器係建立於Ρ型基底30上。在ρ型基底3〇上形成有一 Ν 井區域32及複數個淺溝槽隔離元件(STI)34。在Ν井區域32上具有一 Ρ+區域36b和一 Ν+區域36a,此兩區域形成矽控整流器的陽極。另外, 在P型基底上具有一 P+區域4〇b和一 N+區域40a,此兩區域形成石夕控 整流器的陰極。一個N型互補式金氧半電晶體,包含··一個閘極端^ 以及一個源極/汲極端42係形成於P型基底30和N+區域38上。由於 此架構的加入,低電壓觸發之矽控整流器的導通電壓已小於N型互補 式金氧半電晶體的崩潰電壓,在〇·35//m的製程上,約8V,因而此電 路可應用在靜電保護電路上。 一具有雙觸發之梦控整流器靜電保護電路公開於IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 3, NO· 3, SEPTEMBER 2003。第4圖係顯示此具有雙觸發之矽4空整流 器靜電保護電路。Mpl與Mnl構成一個反相器,Mp2與Mn2構成另 一個反相器,R為電阻,C為電容。此論文所提之架構是採用二個觸 6 1296846 發電流分別從N井區域上的N+區域抽出及從 入,藉崎低導通電屢及縮短石夕控整流器由關掉Hi上^·區域灌 間,因此此電路可以廣泛地應用在靜電保護電路上。、斤需要的時 【發明内容】 本發明之目的是提供—種棚自_發機制 及縮短由轉進人導通所需要的時間’藉 政W π 静駿電掛制電路包括一靜電偵測電路、一白痛is Ιίίίΐί發之雜整流器。雜整流⑽形 m包括一 N井區域、一 p井區域 Ρ+=Γ=域和一第一N+區域’在上述p井區域上具有 廡雷^和卜、區域。上述第—p+區域係電性連接至第一電源供 i- 域係電性連接至觸發電路的第一端點。上述 t f至觸發電路的第二端點,上述第二n+區域係 $接至串接一極體的陽極或第二電源供應電壓。 靜電姻電路是作為侧靜電龍,並_ ίΐί 電路的魏是從自我觸發電路的雜整流器的 3 夕控整流器的第二雕點將此觸發電流灌入石夕控 、井區域上的P+區域,藉以大幅降低石夕控整流器的導通電 •ur^〇n v〇itage) ’因此可在很低的靜電電壓下進入保持區(祕ing 此日守靜電放電電流Iesd會經由N井區域上的p+區域、部分 二::、L型基底及p井區域上的N+區域至地,因此能迅速排掉 靜電電何,藉以保護其他核心電路。 、為了讓本創作之上述和其他目的、特徵、和優點能更明顯易懂, 以下配合圖式以及較佳實施例以說明本創作。 1296846 【實施方式】 根據本發明較佳實施例之一種自我觸發之靜電放電箝制電路,說 明如下。 第5圖係顯示本發明較佳實施例之自我觸發之靜電放電箝制電 路的剖面圖,自我觸發之靜電放電箝制電路1〇〇包括一靜電偵測電路 、一自我觸發電路104及一自我觸發之矽控整流器1〇6。矽控整 流器106係形成於一 P型半導體基底11〇上,其包括複數個淺溝槽隔 離元件 STI(shallow trench isolation) 108、一 N 井區域 112、一 P 井區 域11。8。在N井區域112上具有一 p+區域114和一 N+區域116,在 P井區域118上具有一 區域120和一 N+區域122。P+區域1H係 電性連接至第一電源供應電壓VCC,N+區域116係電性連接至觸發 電巧的第一端點。P+區域12〇係電性連接至觸發電路的第二端點, N+區,122係電性連接至第二電源供應電壓VSS。自我觸發電路1〇4 可=疋任何开》式之電路,包括嵌入(embedded)式電路或是為個別獨立 之電f,並無一定之限制,而本發明特別是指定為個別獨立之電路。 ΙίΜ ^電偵測電路1〇2是作為偵測靜電電壓,並控制自我觸發電路 餘,ft自我,發電流1一。自我觸發電路104的功能是從自我觸發 的第一端點在矽控整流器1〇62Ν井區域丨^上的1^區域 兩4 τ _發電流Itrigger’再由自我觸發電路104的第二端點將此觸發1296846 VIII. Description of the Invention: [Technical Field] The present invention relates to an electrostatic discharge clamp circuit, and more particularly to an electrostatic discharge clamp using an self-triggering self-trigger SCR for electrostatic discharge. Circuit. [Prior Art] In the complementary MOS process, as the oxide layer of the transistor gate becomes thinner and the breakdown voltage becomes lower and lower, the relative electrostatic resistance is worse, so The demand for electrostatic protection circuits is also increasing.丨 $ Controlled Rectifier 通常 In the complementary MOS half process, it usually has a lower holding voltage (hdd is about IV). When the electrostatic discharge is on the integrated circuit, if the controlled rectifier = turn on, the electrostatic charge passes through the hybrid gambling out of the integrated circuit, at this time, Shi Xi ^ f > two devices are bound by the ower = IESDXVhold) Far less than other electrostatic protection components, Zhu Du = body: Λ complement type gold oxide semi-transistor, double carrier junction transistor (BJT), field oxide element (four) butterfly (four) [valve resistance core complementary gold oxide half ( Deep sub-micro CM0S) process 'Shi Xi control VGltag miscellaneous more than 2GV, but deep submicron complementary> is less than igv, so the rectifier itself is not suitable for the application of electrostatic protection circuit, Shi Xi control rectifier i must two ί All other circuits on the film. Next, we will introduce some examples of the traditional application of Shi Xi Zhideng / melon as an electrostatic protection circuit. The circuit If ί $ = G. 5, G12, 317 reveals that the conventional hybrid rectifier electrostatic protection control rectifier. Return to 12. There is a p+ region_ and a &&; redundant == stream on the N-well region 12. In addition, on the p-type substrate, there is a = domain = 1Wf, ^ dust storm bottom 10 and the contact interface of the well 12 and ^^ well ί2 touch 1296846 «==== electric t this circuit has a higher turn-on voltage, and It is not suitable for the rectification of the first picture shows the static protection of the horizontal structure of the control rectifier - diagram. This stone-controlled rectifier is built on the p-type substrate 2〇. There is a -well region 22 on the p-type substrate 20. There is a ρ+ region tear and an N+ region 24a' on the well region 22 which form the anode of the controlled rectifier. Further, on the p-type substrate, there are -P+ region "domain 24e and -N+ region 24d which form the cathode of the stone-controlled rectifier. This electric power is large (4) 增加 at the junction of 2G and N well 22 at the end of p county, an N+ region 24c 'because the p-substrate 2〇 and N+ region 24c have a lower breakdown voltage, 0.35, on the process , about 12v, so the conduction barrier of this modified type of stone-controlled rectifier is also reduced by]Ifc. Therefore, the circuit can be suitably applied to the electrostatic protection circuit. ^ U.S. Pat. No. 5,453,384 discloses a low-voltage-triggered stone-controlled rectifier. The electrostatic protection circuit, and Figure 3 shows a cross-sectional view of the low-voltage-triggered arc-controlled rectifier electrostatic protection circuit. Compared with the circuit of Fig. 2, the circuit of Fig. 3 has been greatly improved. This step-controlled rectifier is built on the 基底-type substrate 30. A well region 32 and a plurality of shallow trench isolation elements (STI) 34 are formed on the p-type substrate 3''. On the crucible region 32 there is a Ρ+ region 36b and a Ν+ region 36a which form the anode of the controlled rectifier. In addition, there is a P+ region 4〇b and an N+ region 40a on the P-type substrate, and the two regions form the cathode of the Arc Control rectifier. An N-type complementary MOS transistor comprising a gate terminal and a source/germanium terminal 42 is formed on the P-type substrate 30 and the N+ region 38. Due to the addition of this architecture, the turn-on voltage of the low voltage triggered 矽-controlled rectifier is less than the breakdown voltage of the N-type complementary MOS transistor, which is about 8V in the process of 〇·35//m, so this circuit can be applied. On the electrostatic protection circuit. A dual-trigger dream-controlled rectifier electrostatic protection circuit is disclosed in IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 3, NO. 3, SEPTEMBER 2003. Figure 4 shows this 矽4 null rectifier electrostatic protection circuit with dual triggering. Mpl and Mnl form an inverter, and Mp2 and Mn2 form another inverter, R is a resistor and C is a capacitor. The structure proposed in this paper is to use two touches of 6 1296846 to draw current from the N+ region on the N-well region and to enter and exit. The low-conduction current is used to shorten the Shi Xi-controlled rectifier by turning off Hi. Therefore, this circuit can be widely applied to electrostatic protection circuits. When the need is needed [invention] The object of the present invention is to provide a mechanism for self-issuing and shortening the time required for turning into a person's turn-by-administration W π Jing Jun electric hanging circuit including an electrostatic detecting circuit A white pain is Ιίίίΐ ί hair of the rectifier. The hetero-rectifier (10) shape m includes an N-well region, a p-well region Ρ+=Γ=domain, and a first N+ region' having a 庑雷^ and a bu region on the p-well region. The first-p+ region is electrically connected to the first power source for the i-domain to be electrically connected to the first terminal of the trigger circuit. The above t f is to the second end of the trigger circuit, and the second n+ region is connected to the anode or the second power supply voltage connected in series with the one pole. The electrostatic marriage circuit is used as a side electrostatic dragon, and the _ ΐ ΐ 电路 circuit is the second etch point of the 3 RC rectifier from the self-trigger circuit of the hybrid rectifier, which is injected into the P+ region on the Shi Xi control and well area. Significantly reduce the conduction of the stone-controlled rectifiers. ur^〇nv〇itage) 'Therefore, it can enter the holding area at a very low electrostatic voltage (secure ing. This day, the electrostatic discharge current Iesd will pass through the p+ area on the N-well area, Part 2:: The L-type substrate and the N+ region on the p-well region to the ground, so that the electrostatic electricity can be quickly removed to protect other core circuits. In order to make the above and other purposes, features, and advantages of the present creation The present invention is described in conjunction with the drawings and the preferred embodiments. 1296846 [Embodiment] A self-triggering electrostatic discharge clamp circuit according to a preferred embodiment of the present invention is described below. A cross-sectional view of a self-triggering electrostatic discharge clamp circuit of the preferred embodiment of the invention, the self-triggering electrostatic discharge clamp circuit 1 includes an electrostatic detection circuit and a self-trigger The circuit 104 and a self-triggered pilot rectifier 1〇6 are formed on a P-type semiconductor substrate 11〇, which includes a plurality of shallow trench isolations (STIs) 108, one N well. The region 112, the P well region 11.8 has a p+ region 114 and an N+ region 116 on the N well region 112, and a region 120 and an N+ region 122 on the P well region 118. The P+ region 1H is electrically charged. Connected to the first power supply voltage VCC, the N+ region 116 is electrically connected to the first end point of the trigger circuit. The P+ region 12 is electrically connected to the second end of the trigger circuit, the N+ region, and the 122 system are electrically connected. Connected to the second power supply voltage VSS. The self-trigger circuit 1〇4 can be any open circuit, including an embedded circuit or an individual independent power f, without limitation, and the present invention In particular, it is designated as an individual independent circuit. ΙίΜ ^Electrical detection circuit 1〇2 is used to detect the electrostatic voltage and control the self-trigger circuit, ft self, and current 1. The function of the self-trigger circuit 104 is self-triggering. The first endpoint is controlled by rectification The second end region 1 ^ on ^ Shu two 1〇62Ν well region 4 τ _ generated current Itrigger 'then triggered by this self-triggering circuit 104
圖所示之自我觸發之靜電放電箝制電灯路^ 100。如第6圖所示,自我觸 1296846 發之靜電放電箝制電路200包括一靜電彳貞測電路202、一自我觸發電 路204及一自我觸發之矽控整流器206。矽控整流器206係形成於一 P型半導體基底210上,其包括複數個淺溝槽隔離元件STI(shaU〇w trench is〇lati〇n)208、一 N 井區域 212、一 P 井區域 218。在 N 井區域 212上具有一 P+區域214和一 N+區域216,在N井區域218上具有 • 一 P+區域220守一 N+區域222。P+區域214係電性連接至第一電源 供應電壓VCC,N+區域216係電性連接至觸發電路的第一端點。p+ _區域220係電性連接至觸發電路的第二端點,N+區域222係作為矽The self-triggered electrostatic discharge clamped electric lamp circuit shown in the figure is ^100. As shown in Fig. 6, the self-actuating electrostatic discharge clamp circuit 200 of the 1296846 includes an electrostatic detection circuit 202, a self-trigger circuit 204, and a self-triggering controlled rectifier 206. The voltage controlled rectifier 206 is formed on a P-type semiconductor substrate 210 and includes a plurality of shallow trench isolation elements STI (STI), an N well region 212, and a P well region 218. There is a P+ region 214 and an N+ region 216 on the N well region 212, and a P+ region 220 guarding an N+ region 222 on the N well region 218. The P+ region 214 is electrically coupled to the first power supply voltage VCC, and the N+ region 216 is electrically coupled to the first terminal of the trigger circuit. The p+_region 220 is electrically connected to the second end of the trigger circuit, and the N+ region 222 is used as the 矽
控整流器206的陰極且電性連接至P+區域252,p+區域252係位於N 井區域250上且作為串接二極體的陽極。在N井區域上之N+區 釀域254亦作為串接二極體的陰極且電性連接至一串接二極體的陽極。 、石夕控整流器206之串接二極體尚具有一 p井區域26〇、一 p井區 域270、一 N井區域280、一 P井區域290、一 p+區域282以及一 N+區域284。N+區域284係電性連接至第二電源供應電壓vss。自 我觸發電路204可以是任何形式之電路,包括後入(咖_冲式電路 或是為個翻立之電路,並無-定之關,而本發明_是指定為個 別獨立之電路。 靜電侧電路202是作為侧靜電電壓,並控制自細 204產生自我觸發電流1吨财。自我觸發電路2〇4之自我觸發機制, _ ίΐϊ流由雜整流11的第—觸發點trigged抽出,並將此電流灌入 trigger2,藉崎鱗通電壓及降低石夕控整 =^06 _掉至¥通所需要的時間。第6圖中的串接二極體的功用 的保持賴,當第—電源電壓vcc及第 7電^縣VSS的電壓錄大時,須串接較多的二極體,用以 =吊,下的不正常的觸發導通現象。靜電放電電流 如 之心。所不。 體D1...DN以及一自我觸發之矽控整产 串妾一極 包含一自我觸菸雷政Mft · 〇自我觸發之矽控整流器係 i self-trigger circuitSCR 〇 ^ 9 1296846 發之石夕控整流器SCR係應用於積體電路晶片,並跨接於積體電路晶片 之第一電源供應電壓VCC與第二電源供應電壓VSS之間,藉以保護 第一電源供應電壓VCC與第二電源供應電壓VSS之間的核心ϋ core circuit不受靜電破壞。自我觸發電路self-trigger circuit可以是任何 形式之電路,包括嵌入(embedded)式電路或是為個別獨立之電路,並 無一定之限制,而本發明特別是指定為個別獨立之電路。 此自我觸發之靜電放電箝制電路提供靜電放電路徑,藉以在靜電 灌入該積體電路晶片時,能迅速將靜電排出。靜電偵測電路為習知的 债測電路’不再重複說明。串接二極體di“.dn是用來提昇整串電路 的保持電壓,若第一電源電壓VCC及第二電源電壓vss的電壓小於 I矽控整流器SCR本身的保持電壓時,此串接二極體D1.. DN可省略 當靜電偵測電路ESD detection circuit偵測到靜電電壓時會立即產生一 訊號並傳送至自我觸發電路self-trigger circuit,自我觸發電路 self-trigger circuit接受到此訊號立即產生自我觸發電流Itrfgger,^即是 從自我觸發電路self-trigger circuit的第一端點在矽控整流器的第一觸 發點triggerl抽出觸發電流Itrigger,再由自我觸發電路seif_tri雜沉咖灿t 的第一端點將此觸發電流Itrigger灌入矽控整流器的第二觸發點 trigged,雜整流器SCR的導通電翻自細發電流的加^而 變低,因此,此自我觸發之靜電放電箝制電路可以在很低的靜電電壓 下,瞬間將靜電電荷排掉,藉以保護積體電路晶片上核心電路_ ’ circuit。第7A圖絲7B圖顯示自我觸發電路是由一 pM〇s電晶體 獨完成。 第8A及8B ϋ顯不本發明之另一型式之自 電路的應用電路圖,此應用電路圖是類似於上述第 self-tngger隱lt疋由-NM〇S電晶體單獨完成,此時靜電侧電路 ESD detection circuit所需輸出的極性與第7八 顯干 Ϊ296846 【圖式簡單說明】 篇1圖係為一傳統石夕控整流器靜電保護電路的剖面圖。 圖。圖係為-傳統改良式橫向結構雜整流器靜電保護電路的剖面 * : ϊ,ί—ίίΐ?發之石夕控整流器靜電保護電路的剖面圖。 第以;發之雜整流器靜電保護電路。 面圖。… ^月車又佳實施例之自我觸發之靜電放電箝制電路的剖 .放電;佳實施例之具有串接二極體的自我觸發之靜電 用電路^。、:、本發明之另一型式之自我觸發之靜電放電箝制電路的應 第犯圖係為第8八圖之上視電路佈局圖。The cathode of the rectifier 206 is controlled and electrically coupled to the P+ region 252, which is located on the N-well region 250 and serves as the anode of the series diode. The N+ region of the N-well region is also used as the cathode of the tandem diode and is electrically connected to the anode of a series of diodes. The tandem diode of the Shi Xi-controlled rectifier 206 further has a p-well region 26〇, a p-well region 270, an N-well region 280, a P-well region 290, a p+ region 282, and an N+ region 284. The N+ region 284 is electrically connected to the second power supply voltage vss. The self-trigger circuit 204 can be any form of circuit, including a back-in (either a hack-type circuit or a flip-flop circuit, without a fixed-off, and the present invention _ is designated as an individual independent circuit. 202 is used as the side electrostatic voltage, and controls the self-triggering current of 1 ton from the self-trigger circuit. The self-triggering circuit 2 〇 4 self-triggering mechanism, the _ ΐϊ ΐϊ stream is extracted by the first trigger point of the hybrid rectification 11 and the current is Fill in the trigger2, borrow the voltage from the scale and reduce the time required for the stone to control the whole =^06 _ to the time of the pass. The function of the series diode in Figure 6 is maintained, when the first power supply voltage vcc and When the voltage of the VSS of the 7th electric county is large, it is necessary to connect a large number of diodes in series, which is used to hang, and the abnormal triggering conduction phenomenon. The electrostatic discharge current is like the heart. No. D1.. .DN and a self-triggered 矽 整 包含 包含 包含 包含 包含 包含 包含 包含 包含 ft ft self self self self self-triggering control rectifier system i self-trigger circuitSCR 〇 ^ 9 1296846 hair stone control rectifier SCR system application Integral circuit chip, and connected to the integrated circuit The first power supply voltage VCC of the chip is between the second power supply voltage VSS and the second power supply voltage VSS, thereby protecting the core ϋ core circuit between the first power supply voltage VCC and the second power supply voltage VSS from electrostatic damage. The self-trigger circuit self- The trigger circuit can be any form of circuit, including an embedded circuit or a separate circuit, without limitation, and the invention is specifically designated as an individual independent circuit. This self-triggering electrostatic discharge clamp circuit The electrostatic discharge path is provided, so that the static electricity can be quickly discharged when the static electricity is poured into the integrated circuit chip. The static electricity detecting circuit is a conventional debt measuring circuit 'will not be repeated. The serial diode di ".dn is It is used to raise the holding voltage of the whole series of circuits. If the voltages of the first power supply voltage VCC and the second power supply voltage vss are smaller than the holding voltage of the I-controlled rectifier SCR itself, the serially connected diode D1.. DN can be omitted as static electricity. When the detection circuit ESD detection circuit detects the electrostatic voltage, it will immediately generate a signal and transmit it to the self-trigger circuit, self-trigger circuit. The self-trigger circuit receives this signal and immediately generates a self-trigger current Itrfgger, which is the first end point of the self-trigger circuit from the first trigger point of the self-trigger circuit to extract the trigger current Itrigger, and then self-trigger The first end of the circuit seif_tri is the triggering current Itrigger is injected into the second trigger point of the controlled rectifier, and the conduction of the hybrid rectifier SCR is turned down from the fine current, so this self The triggered electrostatic discharge clamp circuit can discharge the electrostatic charge instantaneously under a very low electrostatic voltage, thereby protecting the core circuit _ 'circuit on the integrated circuit chip. Figure 7A Figure 7B shows that the self-trigger circuit is implemented by a pM〇s transistor alone. 8A and 8B show an application circuit diagram of another type of self-circuit of the present invention. The application circuit diagram is similar to the above-mentioned self-tngger hidden 疋 by the -NM〇S transistor alone, and the electrostatic side circuit ESD at this time The polarity of the output required by the detection circuit and the 7th display Ϊ 296846 [Simple description of the diagram] The 1st diagram is a cross-sectional view of a conventional protection circuit for the electrostatic protection circuit of the rectifier. Figure. The figure is a cross section of the electrostatic protection circuit of the conventional modified lateral structure hybrid rectifier. * : ϊ, ί— ίίΐ? The first; the hybrid rectifier electrostatic protection circuit. Surface map. ... ^. The self-triggering electrostatic discharge clamp circuit of the preferred embodiment of the monthly vehicle. Discharge; a self-triggering electrostatic circuit with a series diode in a preferred embodiment. The pattern of the self-triggered electrostatic discharge clamp circuit of another type of the present invention is the top view circuit layout of the eighth figure.
【主要元件符號說明】 -我觸發之靜電放電箝制電路 靜電偵測電路 自我觸發電路 矽控整流器 P型半導體基底 淺溝槽隔離元件 N井區域 P井區域 P+區域 100 ^ 200 102 、 202 104 、 204 106 、 206 110、210、10、20、30 108 、 208 112、212、250、280、12、22、32 118、218、260、270、290 U4、120、214、220、252、282、14b、[Main component symbol description] - I triggered electrostatic discharge clamp circuit electrostatic detection circuit self-trigger circuit 整流 control rectifier P-type semiconductor substrate shallow trench isolation element N well region P well region P + region 100 ^ 200 102 , 202 104 , 204 106, 206 110, 210, 10, 20, 30 108, 208 112, 212, 250, 280, 12, 22, 32 118, 218, 260, 270, 290 U4, 120, 214, 220, 252, 282, 14b ,
1296846 14d、24b、24e、36b、40b N+區域 116、122、216、222、254、284、14a 14c、24a、24c、24d、36a、40a、38 VCC 第一電源供應電壓 矽控整流器的第一觸發點 矽控整流器的第二觸發點 第二電源供應電壓 自我觸發電流 靜電放電電流 靜電偵測電路 串接二極體 自我觸發電路 矽控整流器 核心電路 閘極端 源極/沒極 triggerl trigger21296846 14d, 24b, 24e, 36b, 40b N+ region 116, 122, 216, 222, 254, 284, 14a 14c, 24a, 24c, 24d, 36a, 40a, 38 VCC first power supply voltage controlled rectifier first Trigger point control rectifier second trigger point second power supply voltage self-trigger current electrostatic discharge current electrostatic detection circuit series diode self-trigger circuit 整流 control rectifier core circuit gate extreme source / no pole triggerl trigger2
VSSVSS
ItriggerItrigger
IesdIesd
ESD detection circuit D1...DNESD detection circuit D1...DN
self-trigger circuit SCR core circuit 44 42 12Self-trigger circuit SCR core circuit 44 42 12
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94143165A TWI296846B (en) | 2005-12-07 | 2005-12-07 | Self-trigger electrostatic discharge clamp circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94143165A TWI296846B (en) | 2005-12-07 | 2005-12-07 | Self-trigger electrostatic discharge clamp circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200723526A TW200723526A (en) | 2007-06-16 |
TWI296846B true TWI296846B (en) | 2008-05-11 |
Family
ID=45068892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94143165A TWI296846B (en) | 2005-12-07 | 2005-12-07 | Self-trigger electrostatic discharge clamp circuit |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI296846B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101908758B (en) * | 2009-06-03 | 2013-03-13 | 智原科技股份有限公司 | Electrostatic discharge protection circuit with merging trigger mechanism |
-
2005
- 2005-12-07 TW TW94143165A patent/TWI296846B/en active
Also Published As
Publication number | Publication date |
---|---|
TW200723526A (en) | 2007-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7915638B2 (en) | Symmetric bidirectional silicon-controlled rectifier | |
US7825473B2 (en) | Initial-on SCR device for on-chip ESD protection | |
US7786504B2 (en) | Bidirectional PNPN silicon-controlled rectifier | |
TW497245B (en) | Protection device with a silicon-controlled rectifier | |
TWI277197B (en) | Semiconductor device | |
TWI270192B (en) | Electro-static discharge protection circuit | |
US9704850B2 (en) | Electrostatic discharge protection device comprising a silicon controlled rectifier | |
TW200828569A (en) | Latch-up free vertical TVS diode array structure using trench isolation | |
US7064358B2 (en) | Triggered back-to-back diodes for ESD protection in triple-well CMOS process | |
KR101043737B1 (en) | Electrostatic discharge protection element | |
JP2008541414A (en) | Guard wall structure for ESD protection | |
JP2001186003A (en) | Input output protection device for semiconductor integrated circuit and its protection method | |
US20040251502A1 (en) | Efficient pMOS ESD protection circuit | |
US6888248B2 (en) | Extended length metal line for improved ESD performance | |
TW201227926A (en) | Electrostatic discharge (ESD) protection circuit | |
US6631060B2 (en) | Field oxide device with zener junction for electrostatic discharge (ESD) protection and other applications | |
US7348643B2 (en) | Semiconductor dual guardring arrangement | |
US20170287895A1 (en) | Electrostatic discharge protection apparatus and applications thereof | |
JP2000277700A (en) | Static discharge protection circuit | |
TWI296846B (en) | Self-trigger electrostatic discharge clamp circuit | |
TWI291224B (en) | Semiconductor layout structure for ESD production circuits | |
TWI243524B (en) | A semiconductor device equipped with a protection circuit to protect the internal circuit | |
US6762439B1 (en) | Diode for power protection | |
TWI286378B (en) | ESD protection circuit with low parasitic capacitance | |
TW201034165A (en) | Electrostatic discharge protection devices |