567318567318
千 以製造 〔dep〇 處理器 係為石夕 割之前 體電路 測試頭 needle 〔或稱 間傳送 一個別 ’如微 s i t i 〇n 、記憶 或砂化 需要加 之測試 〔test 〕或其 焊墊〕 電性訊 的積體電路係集中於一晶圓以半導體製程 影顯像〔photolithography〕、沉積Manufactured by Qianyi [dep〇 processor is a cutting head of Shi Xifeng's body circuit test head [or called to transmit a different 'such as micro siti 〇n, memory or sanding needs to add a test [test] or its pad] electrical The semiconductor integrated circuit is focused on a wafer using semiconductor process photolithography, deposition
〕與餘刻〔etching〕等製程，而製作成 體與邏輯晶片等裝置，該半導體晶圓之材^ 鎵〔gallium arsenide〕，製造後在晶圓切 以檢測其電性性能，通常用以測試晶圓上積 設備係裝設有一探測卡〔probe card〕於其 head〕，而探測卡具有複數個探針〔pr〇b^ 它探觸元件，以接觸晶圓上積體電路之電極 ，經由探測卡在測試設備與受測積體電路之 號0 在美國專利第 6,060, 89 1 號「PROBE CARD FOR SEMICONDUCTOR WAFER AND METHOD AND SYSTEM FOR TESTING WAFERS」中，其係包含有一矽質之連接板 〔interconnect substrate〕，連接板之下表面係形成有 凸塊狀之接觸元件〔contact element〕，該連接板之周 邊機械並電性接合有薄膜〔membrane〕，該薄膜係結合該 連接板至一探測卡固定板〔probe card fixture〕，而在 連接板之上表面上係設有一施力機構〔force-applying mechanism〕，以推壓該連接板，使得接觸元件電性接觸] And other processes such as etching, and manufacturing devices such as bulk and logic wafers. The material of this semiconductor wafer is gallium arsenide. After manufacturing, it is cut on the wafer to check its electrical properties. It is usually used for testing. The wafer on-board device is equipped with a probe card on its head], and the probe card has a plurality of probes [pr0b ^ it touches the element to contact the electrodes of the integrated circuit on the wafer, via The probe card is in test equipment and circuit under test. No. 0 in US Patent No. 6,060, 89 1 "PROBE CARD FOR SEMICONDUCTOR WAFER AND METHOD AND SYSTEM FOR TESTING WAFERS", which includes a silicon connection board (interconnect substrate], the lower surface of the connection board is formed with a bump-like contact element [contact element], and the periphery of the connection board is mechanically and electrically joined with a film [membrane], which is combined with the connection board to a detection card and fixed Board [probe card fixture], and a force-applying mechanism is provided on the upper surface of the connection board to push the connection board to make the contact components electrically contact
第6頁 567318 五 發明說明（2) 一 之電極’由於該連接板之矽材料與受測積體 優點，、熱膨脹係數，此一探測卡具有準確接觸之 極接觸偏：因溫度變化產生接觸元件對受測積體電路之電 或不ΐ用該連接板係不可拆卸，一旦連接板產生損傷 降低^，需要拋棄整個探測卡，使得測試成本無法有效 【發明目的及概要】 性連Ϊ::之ΐ要目的係在於提供一種探測卡之壓觸式電 1： _ ^ 用其彈性接觸元件彈性壓觸石夕基板Μ > 藏 ?/··<·： 電路板，使得矽基板可模組式裝η 低測試成本。 夕僧電路板，以降 本發明之次一目的係在於提供一 :系模組式裝設於該多層電路板，i木二：觸：：基板 接裝置彈性壓觸石夕基板與多層電路電性連 更換，以降低測試成本。 于^夕基板係可 依本發明之探測卡之壓觸 < 電性⑸ 有一絕緣層以及在絕緣層之複數個—八係包含 接有第一導接墊與第二導接^母線路分別連 元件，每-彈性接觸元件具有—：；：：有；，固彈性接觸 有一導電I，以供壓觸式電性連2 ^，條係結合 裝置運用於壓觸式電性連接一石夕基板：二巧：土電性連接 =板係模組式設於該多層電路板之：心時’ 【發明詳細說明】 了供更換。Page 6 567318 Description of the five inventions (2) One of the electrodes' due to the silicon material of the connection plate and the measurand, the thermal expansion coefficient, this probe card has the correct contact contact bias: contact elements due to temperature changes Electricity of the circuit under test or the use of the connection board is not removable. Once the connection board is damaged, the entire probe card needs to be discarded, making the test cost ineffective [Objective and summary of the invention]: ΐThe main purpose is to provide a pressure contact type electric probe card: _ ^ Use its elastic contact element to elastically press the stone substrate M > Hidden? / ·· < ·: Circuit board to make the silicon substrate modular Type installation η Low test cost. The evening monk circuit board, in order to reduce the second purpose of the present invention, is to provide one: a modular type is mounted on the multilayer circuit board, i wooden 2: touch :: substrate connection device elastic pressure contact stone substrate and multilayer circuit electrical Replacement to reduce test costs. The substrate can be pressed according to the probe card of the present invention < electricity > has an insulating layer and a plurality of insulating layers—the eight series include a first conductive pad and a second conductive pad respectively. Connection element, each-elastic contact element has-:; :: yes; solid-elastic contact has a conductive I for pressure contact electrical connection 2 ^, a strip-type bonding device is used for pressure contact electrical connection to a Shixi substrate : Er Qiao: Geoelectrical connection = Board-type module is installed on this multilayer circuit board: Xinshi '[Detailed description of the invention] It is available for replacement.
567318 五、發明說明（3) 依本發明2 =體：：：將列舉以下之實施例說明·· 卡1之壓觸式電性連接-只；：，如第1圖所示，-種探測 測卡1係主要包含右、 係供裝設於一探測卡1，該探 一電性連接裝置30 Λ電路板10、一石夕基板20及至少 板20與一多層電路拓^ \生連接裝置30係彈性壓觸一矽基 路板〔Multi la板 該多層電路板U係為多層印刷電 凹:7 PCB〕，多層電路板“係具有-凹穴 Hit::周邊之多個接觸端13，利用該多層電路 至一半導分佈，該些接觸端13係能在探測卡1裝設 f =導體測试設備之測試頭〔test head〕〈圖未繪 通至測試頭’較佳地…層電路板10係具 牙夕層電路板1 〇之通孔12，通孔12係連通至該凹 穴11，以供吸附固定矽基板2〇 ;該矽基板2〇係模組式設於 該多層電路板10之凹穴U，該矽基板2〇係具有一表面21， =表面21係形成有複數個探針23以及該表面21周邊之接觸 端22，該矽基板2〇係以半導體製程之微影顯像、沉積及蝕 刻技術而形成微細線路〈圖未繪出〉與接觸端2 2，再以微 機電製程製作各式形狀之探針2 3，如垂直、彎曲探針、導 電柱或凸塊等等，較佳地，該矽基板2〇係為一具有微機電 元件〔Micro-Electro-Mechanical-System element〕之 晶片，包含有如探針2 3、微感測器或微制動器等等，較佳 地’在石夕基板2 0之另一表面係形成有一緩衝層2 4，以避免 矽基板20因應力變化而碎裂，該緩衝層24係可為一大於石夕 基板20尺寸之固定板。 五、發明說明（4) 第及3圖所示，壓觸式電性連接裝置3 0係用以内部 電性接觸該探測卡之矽美姑9〇命斗^丧我罝川你用以円邛 式電性連接裝置30 右;!層電路板1〇，該麼觸 係呈扇形並具有一表：二3有'絕緣層31，該絕緣層31其 ^ ^ . 啕表面3 1 3、一外側31 2及一内侧31 1，複567318 V. Description of the invention (3) According to the invention 2 = body :: The following examples will be listed ... The card 1's pressure-contact electrical connection-only;:, as shown in Figure 1,-a kind of detection The test card 1 series mainly includes a right side, which is provided for installation on a detection card 1, which detects an electrical connection device 30, a circuit board 10, a stone substrate 20, and at least the board 20 and a multilayer circuit extension. 30 series of elastic pressure-contact silicon-based circuit board [Multi la board, the multilayer circuit board U is a multilayer printed electrical recess: 7 PCB], the multilayer circuit board "has-cavity Hit :: multiple contact ends 13 around, Utilizing the multilayer circuit to a half-conductance distribution, the contact terminals 13 can be equipped with a test head [test head] of the f = conductor test equipment on the probe card 1 (not shown to the test head). The board 10 is a through hole 12 with a dental circuit board 10, and the through hole 12 is connected to the cavity 11 for adsorption and fixation of a silicon substrate 20; the silicon substrate 20 is a module type provided in the multilayer circuit The cavity U of the plate 10, the silicon substrate 20 has a surface 21, and the surface 21 is formed with a plurality of probes 23 and contacts around the surface 21 End 22, the silicon substrate 20 is formed by microlithography development, deposition and etching techniques of the semiconductor process to form a fine circuit (not shown) and a contact end 22, and then various microprobes are used to make probes of various shapes. 2 3, such as vertical, curved probes, conductive posts or bumps, etc. Preferably, the silicon substrate 20 is a wafer with a micro-electro-mechanical-system element, including Needle 2 3, micro-sensor or micro-actuator, etc., preferably, a buffer layer 24 is formed on the other surface of Shi Xi substrate 20 to prevent the silicon substrate 20 from being broken due to stress changes. The layer 24 can be a fixed plate larger than the size of the Shixi substrate 20. V. Description of the invention (4) As shown in Figures 3 and 3, the pressure-contact electrical connection device 30 is used to electrically contact the detection card internally. Si Meigu 90th Fighter ^ Mine, you use the 円 邛 -type electrical connection device 30 right ;! layer circuit board 10, the contact system is fan-shaped and has a table: two 3 have 'insulation layer 31 The insulating layer 31 is ^ ^. 啕 surface 3 1 3, an outer side 31 2 and an inner side 31 1,
數個扇形電性連接梦署q ^ d I 接褒置3 0係排列成一環狀，較佳地，該絕 ㈣Μ係由軟性絕緣材料製成，如聚亞醯胺 〔P〇lylimide’ PI〕、聚酯〔polyester, PET〕或玻璃纖 $維強，樹脂’在絕緣層3丨之表面3丨3上形成有複數個線路 2，每一線路32分別連接有第一導接墊34與第二導接墊 3 5第導接墊3 4係較接近該内側3 11並對應於矽基板2 〇 之接觸塾22 ’而第二導接墊25係較接近該外側312，較佳 地、’在絕緣層3 1之表面3 1 3上更形成有一保護層33，以覆 蓋^保護該些線路32，在每一第一導接墊34與第二導接墊 35分別結合有一彈性接觸元件40，每一彈性接觸元件40具 有一弧面支撐條41及一導電層42，該弧面支撐條41係可為 如MICRO CHEM公司所提供之型號su_ 8 2000系列之厚光阻 或其它彈性絕緣材料，在本實施例中，該支撐條4丨係具有 一弧面’用以結合該導電層42，以提供彈性，該導電層42 之材質係為鎢、金、銅、鈀、鈦、鉑或其合金等不具有焊 接回焊性〔n〇n-ref l〇w〕之金屬，以供壓觸式電性連接。 由於該彈性接觸元件40具有彈性電性接觸之特性，該 些壓觸式電性連接裝置3 0係能模組式電性接觸該矽基板20 與該多層電路板1 〇，例如以一定位裝置5 〇固定該些電性連 接裝置30於多層電路板丨〇之凹穴丨丨周邊，使得矽基板2〇能 567318 五、發明說明（5) :^测卡作更換或替代，無論是石夕基板20或多層電路 ^貝裏均不需要拋棄整個探測卡，在另一運用場合， 同電〖生功此受測積體電路之電極分佈變更時，特別是 =具有重分佈凸塊之半導體晶圓與一般裸晶 '，合之石夕基板20並模組式結合同一型態之路 =半使用’ i在又一運用場合，當相同電極分 2丰：體晶圓需要在不同型號之半導測試設備中進行測 2° 0 ^ ί f Ϊ重新製作相符合之多層電路板1 G並與石夕基板 借乂盅ί式結合，即能適用另一型號之半導體測試設 ’在半導體晶圓測試過程中’測試成本將可有效降低。 此外，依本發明之探測卡之壓觸式電性連接 立 =接2件4〇係具有多種型態’如第“圖所*，該彈性 1第’道垃2樓條41之一端係結合對應之第-導接塾34 或第二導接墊35，而導電層42之一端亦結合對應之 =34或第二導接墊35 ;或如第4B圖所示，該；性接觸元 ίγ支撐條41b之結合端係具有一根部43b，根部43b兩 :係延伸過其對應結合之第一導接墊3 4或第二導接墊3 5之 一二H支撐條穩固性’而該支撐條41b亦結合有 =電層42b，或如第4C圖所示’該彈性接觸元件4〇之支 樓條41 c之兩側係切齊對應結合之第一導接墊以或第二 =35以較大面積地結合導電層…；或如第则所示， =接之支樓條W之兩側係延伸過其對應結 δ之第-導接塾34或第二導接墊35之外，而導電層 部份結合於該支樓條41d之一表面；或如第4ε圖所示，該 五、發明說明（6) ，性接觸元件40之支撐條41 e之一端係結合於對應結合之 第、導接墊34或第二導接墊35之外且其兩側係延伸過該 二，接墊34〔或第二導接墊〕，而結合於支撐條4]^^導 係具有一水平延伸部43e，其係結合於對應之第- 43或第二導接墊35 ;或如第4F圖所示，該彈性接M 元件40之支撐條41 f孫1女^ θ坪性接觸 f+靡&人:條4 f係具有一垂直尖端43f，其係垂直於該 撺條41f與垂直尖端43f之導 ^ 叉 性，上述之彈性接觸元件均能▲得本發明:之接觸 式電性連接裝置具有模組化彈性壓探測卡之壓觸 明之楝測卡之壓觸式電性 ：：’再者，本發 結構。 展置亦可形成為多層之線路Several fan-shaped electrical connections are connected to the dream department q ^ d I and the 30 series are arranged in a ring. Preferably, the insulation M is made of a flexible insulating material, such as polyimide [P0lylimide 'PI]. , Polyester [PET] or glass fiber, and the resin 'has a plurality of lines 2 formed on the surface 3 丨 3 of the insulating layer 3 丨, and each line 32 is connected to the first lead pad 34 and the first The second lead pad 3 5 and the third lead pad 3 4 are closer to the inner side 3 11 and correspond to the contact 塾 22 'of the silicon substrate 20 and the second lead pad 25 is closer to the outer side 312, preferably,' A protective layer 33 is further formed on the surface 3 1 3 of the insulating layer 31 to cover and protect the circuits 32. Each of the first conductive pads 34 and the second conductive pads 35 are respectively combined with an elastic contact element 40. Each elastic contact element 40 has an arc-shaped support bar 41 and a conductive layer 42. The arc-shaped support bar 41 can be a thick photoresistor or other elastic insulating material of the model su_ 8 2000 series provided by MICRO CHEM company. In this embodiment, the support bar 4 has an arc surface for bonding the conductive layer 42 to provide elasticity. Material-based conductive layer 42 of tungsten, gold, copper, palladium, titanium, platinum or an alloy having no reflow soldering metal l〇w] [n〇n-ref, the press-contact for electrical connection. Since the elastic contact element 40 has the characteristics of elastic electrical contact, the pressure-contact electrical connection devices 30 can electrically contact the silicon substrate 20 and the multilayer circuit board 10 in a modular manner, for example, by a positioning device 〇 Fix the electrical connection devices 30 around the pits of the multilayer circuit board 丨 〇, so that the silicon substrate 20 can be 567318. 5. Description of the invention (5): ^ test card for replacement or replacement, whether it is Shi Xi The substrate 20 or multilayer circuit ^ Bailey does not need to abandon the entire probe card. In another application, when the electrode distribution of the circuit under test is changed, especially = a semiconductor crystal with redistribution bumps "Circle and ordinary bare crystals", the combination of the Shishi substrate 20 and the modular combination of the same type of road = semi-use 'i In another application, when the same electrode is divided into two abundant: the body wafer needs to be half of different models 2 ° 0 ^ ί f Ϊ in the test equipment to re-produce a compatible multi-layer circuit board 1 G and combine it with the Shi Xi substrate borrowing cup, it can be applied to another type of semiconductor test equipment 'in semiconductor wafers 'Test costs will be effective during testing reduce. In addition, the pressure-contact electrical connection of the detection card according to the present invention is to connect two pieces. The 40 series has a variety of types, such as the "graph", and the flexible one is connected to one end of the second road strip 41. Corresponding to the-lead 34 or the second lead pad 35, and one end of the conductive layer 42 is also combined with the corresponding = 34 or the second lead pad 35; or as shown in Figure 4B, the; sexual contact element The joint end of the support bar 41b has a portion 43b, and the root portion 43b is two: the first guide pad 34 or the second guide pad 35 that extends over its corresponding combination. The strip 41b is also combined with an electrical layer 42b, or as shown in FIG. 4C, the two sides of the branch strip 41c of the elastic contact element 40 are aligned with the corresponding first bonding pads or the second = 35. The conductive layer is combined with a large area ... or as shown in the first rule, the two sides of the connected branch strip W extend beyond the first conductive pad 34 or the second conductive pad 35 of its corresponding junction δ And the conductive layer part is bonded to one surface of the branch strip 41d; or as shown in FIG. 4ε, the fifth invention description (6), one end of the support strip 41e of the sexual contact element 40 is bonded to the corresponding The first, second and third conductive pads 34 and 35 are extended beyond the two, and the two pads 34 [or the second conductive pads] are combined with the support bar 4] ^^ It has a horizontal extension 43e, which is coupled to the corresponding -43 or second guide pad 35; or as shown in Fig. 4F, the support 41 of the elastic connection M element 40 f grand 1 daughter ^ θ flatness Contact f ++ & person: The strip 4 f has a vertical tip 43f, which is perpendicular to the guiding of the purlin 41f and the vertical tip 43f. The above-mentioned elastic contact elements can be obtained according to the invention: The electrical connection device has the pressure-sensitive electrical property of the modular elastic pressure detection card and the touch-sensitive test card: 'Furthermore, the present structure. The exhibition can also be formed as a multilayer circuit.
，之申請專利範圍所界定者 不脫離本發明之精神和範 均屬於本發明之保護範圍。 圖式簡單說明 圖式說明 第 1 圖 •依本發明 一探测卡 第 2 圖 •依本發明 該複數個 第 3 圖 •依本發明 第4A至4F圖 其中一電性觸式電性連接裳置 依H ^連接裝置之截面圖；及 义t發明之探 其中一雷祕ΐ 壓觸式電性連接裝置 元件之立體示意圖。了、”有各式每性接 圖號說明 10 多層電路板 11 凹穴 12 20 碎基板 21 表面 22 24 緩衝層 30 電性連接裝置 31 絕緣層 311 内側 312 32 線路 33 34 第一導接墊 35 40 彈性接觸元件 41 41b 支撐條 42b 41c 支撐條 42c 通孔 13 接觸端 接觸端 23 探針 外側 保護層 313 表面 第二導接墊 支撐條 導電層 導電層 42 43b 導電層 根部 567318 圖式簡單說明 41d支撐條 42d 導電層 41e 支撐條 42e 導電層 43e 水平延伸部 41f 50 支撐條 定位裝置 42f 導電層 43f 垂直尖端 ίίThose that are defined in the scope of patent application without departing from the spirit and scope of the present invention belong to the protection scope of the present invention. Brief Description of the Drawings Brief Description of the Drawings Figure 1 • A probe card according to the present invention Figure 2 • The plurality of 3rd figures according to the present invention • One of the electric contact type electric connection clothes according to the present invention 4A to 4F A cross-sectional view of the connection device according to H ^; and a three-dimensional schematic diagram of the elements of the invention of a thunderbolt ΐ pressure-contact electrical connection device. There are various types of connection diagram descriptions. 10 Multi-layer circuit boards 11 Recesses 12 20 Broken substrate 21 Surface 22 24 Buffer layer 30 Electrical connection device 31 Insulation layer 311 Inside 312 32 Circuit 33 34 First lead pad 35 40 Elastic contact element 41 41b Support bar 42b 41c Support bar 42c Through hole 13 Contact end contact end 23 Probe outer protective layer 313 Surface second pad support bar conductive layer conductive layer 42 43b conductive layer root 567318 Schematic description 41d Support bar 42d Conductive layer 41e Support bar 42e Conductive layer 43e Horizontal extension 41f 50 Support bar positioning device 42f Conductive layer 43f Vertical tip ί
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