經濟部智慧財產局員工消費合作社印製 4 2 6 9 0:β W半導體元件尺寸愈來愈小時，如目前已進入次微米之積體 能路製程’由於元件為達到高速運算之要求，放使用多層金屬層 結構_ti-丨aye「meta丨丨izat_，以提高金屬連線能力金屬層 厚度較厚’使付金屬層表面圖形高低不平，若再多層金屬層結構 後會愈使传後續金屬狀表面凹凸不平程度更為嚴重，將影響到 後續製程’如沈積、照相_Qg「aphy)、侧料進行。因此介 於金屬間之介電質層(Inter Metal Die|ectric IMD)必須具有良好 之階梯覆M(step coverage)及从平坦化之躲。換言之，有 良好之階梯覆蓋率才能產生均勻性覆蓋（c〇nf_a|咖「响 及藉此達到使表面平坦化之目的。一非均勻性覆蓋不僅不能達到 使表面平坦化之目的，甚而料在金屬導線間產生空洞(v〇id)， 如圖一所示。當介電質2沈積在金屬導線彳時，若階梯覆蓋率差 且沈積厚度夠厚時，將在圖一中相鄰A處會逐漸接近而密合在一 起形成所謂空洞B。於照相製程中，該光阻會自該空洞流入，造 成位該空洞處之光阻變薄，使得該介電質層蝕刻時形成一坑洞甚 至影響底下金屬層之可靠度。同時流入洞孔内之光阻極不易清除 掉’使得在後續製程中造成晶片之污染使產品良率大為降低。由於化學氣相沈積法(CVD)所成長之介_電質如二氧化石夕無 f請先閲讀背面之注意事項再填寫本頁) 111 - I 1 fn 1 0 -1 I. « φ--- 本紙張尺度逍用中國國家標準（CNS ) A4規格（2〖0X297公釐） A7 ______Β7_ 五、發明説明（） 4¾繫之均勻性覆蓋’故目前皆選用旋塗式Spin-On-Glass (以下簡稱SOG)溶液’藉其室溫時具有類似光阻流動特性可填滿 金屬間之空隙’以達平坦化之目的。同時因S〇G材質乃為一品 質差、雜質含量多之氧化矽，故無法與金屬層直接接觸，必須再 以品質良好之氧化石夕如以CVD成長之氧化石夕層加以隔離避免污 染。一般IMD採用CVD氡化石夕/SOG/CVD氧化矽之三明治結構， 其中第一層CVD氧化矽除了具有隔離功效外，還可提供增加 SOG與金屬層附著力之功效。 由於SOG之平坦度與其使用溶液成份有關，且一般而言， 雖然厚度愈厚平坦度愈好’但平坦度之改善會隨厚度增加而逐漸 飽和，且極易造成如前所述之空洞及易於龜裂等缺點。因為一次 塗佈SOG之製程並無法達到生產線上之需求，故目前生產線上 係採用分段式SOG塗佈製程，使得每次s〇g塗佈都可達一定厚 度而不龜裂及最佳之平坦度改善效果，經由合成使得最後之 SOG便具有足夠厚度及平坦化功效。但是分段式s〇G塗佈製程 明顯伴隨浪費山時及大量消耗S0G成本等缺點，不符經濟效 益。或者亦有在分段式塗佈製程中採用不同之s〇G材質，但此 亦具有成本昂貴之缺點。因此如何提出一種既可大幅縮短工時且 可節省SOG消耗成本之塗佈方法對業者而言是-重要課題。 本紙法織用中國國家榇率娜（ (請先聞讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 五、發明説明（矚綱6 8 圖一為非均句性覆蓋之示意 圖 圖二為SOG厚度與晶片旋轉速度之關係圖。 圖三A為依據本發明平坦化程度與金属導線間距之關係，圖 圖二B為定義平坦化程度之示意圖。 囷四A為習知技術與依據本發明所形成之s〇g之乾侧速 率比較圖。 濟 部 lr 慧 財 產 局 消 合 作 社 印 製 圖四日為習知技術與依據本發明所形成之SOG之熱收 比較圖。 發明概述： 本發明主要目的乃提供—種既可大幅縮短工時且可節 省SOG消耗成本之s〇g塗佈方法。 本發明主要鋪由降低晶歧賴之雜魅至咖〇轉/分 與300轉/分間’使得被離心力拋出之SOG量減少，且s〇G可 迅速填滿金屬導線間之空隙，而達到生產所需之厚度及平坦度， 且僅需-次SOG塗佈製辨可絲，較f知之分段式塗佈製程 明顯具有大幅縮工時及節省SOG使用成本等效果。 為使貴冑查委員對本發明技術手段及其功效更加明瞭，茲 縮率 (请先閏讀背面之注意事項再填寫本1) ---VI-----——. Τ1 nil It f. f . 本紙張纽制t HS家榇準（CNS ) A规^ ( 2丨Gx2·董丁 B7 B7 經 濟 部 智 .¾ 財 產 局 合 h 社 印 製 五、發明説明（） 佐以圖式並詳加說明如后： 426908 如前所遂SOG係實質上為一氧化矽’它是以流體狀液體配 送至靜止之晶片上，然後再將晶片以自轉方式旋轉使其得以均勻 地塗佈’，目前生產線係採用3000轉/分(rpm)之高速旋轉。經由一 連串實驗，我們發現沈積之SOG厚度與晶片旋轉速度關係圖如 圖二所示，即沈積厚度與旋轉速度成反比，速度愈快則沈積厚愈 薄。同時速度愈快則S〇G溶液被離心力甩離晶片之s〇G量愈 大’換言之’速度愈快其消耗SOG成本愈大。一般而言，s〇G 沈積厚度愈厚，則金屬導線間隙愈容易填滿使得晶片表面更為平 滑平坦。目前在生產線上所採用旋轉速度大約為加㈤轉/分 (「pm)，經由實驗發現以介於2〇〇〇轉/分(rpm)與3〇〇轉/分(rpm)間 之晶片旋轉速度所得之SOG厚度最為適當，即符合足夠厚度且 不產生龜裂之要求。 在比較本發明與習知平坦度之差異之前，先把平坦度加以定 量化，其定義如圖三B所示’即金屬導線上之s〇G高度H1與金 屬導線間之SOG高度H2之比值。理論上，當H1與H2相等就表 示平坦率為1。我們先在具有不同组之金屬導線間距之晶片上配 送相同劑量且相同成份之SOG溶液，然後每組晶片之旋轉速度 分別以習知之高速分段式旋轉及依據本發明之低速(即介於2〇〇〇 本纸張尺度適用中國國家捸準（CNS ) A4规格（2丨0)<297公| ) B7 五、發明説明（） 與分間)旋轉約12秒，再依圖三B所示之平坦度的定 義求出習知技術與本發明所得之平坦度數值，同時作出這平拍声 數值與金屬線間距之關係圖，如圖三A所示。由圖三a中明顯發 現任何一耝之金屬導線間距，低速旋轉轉所得之平坦度均高於分 丰又式之尚速旋轉。同時就如圖二所示，本發明之S〇g厚度均較 習知者為厚。 又完成SOG溶液塗佈後，需再經一烘烤過程將溶劑蒸發掉 而形成具有介電隔離作用之固體化氧化矽，換言之，s〇G具有 熱收縮之特性，即SOG經加熱後體積會變小。該烘烤製程之參 數為攝氏425度，時間為1小時。一般在檢驗s〇G特性時皆採用 其乾蝕刻速率及熱收縮率之兩參數值。目前我們任取前述五組以 習知技術及依據本發明所裂成之S0G樣品，經一烘烤後再分別 量測其乾蝕刻速率及烘烤前後體積之變化量並做一比較如圖四A 與四B所示。其中橫座標之前五個樣品為習知技術裂成之s〇G , 而後五個樣品為依據本發明所製成之S〇G，分別由圖四A與四B 取其習知技術及本發明之平均值，明顯發現不論是乾蝕刻速率或 熱收縮率，習知技術與本發明所形成之SOG皆非常相近，此即 表示本發明除了提高平坦度及厚度外，並不影響其他特性。Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 2 6 9 0: β W Semiconductor device sizes are getting smaller and smaller. For example, it has entered the sub-micron integrated energy production process. 'Since the components meet the requirements of high-speed computing, multiple layers are used. Metal layer structure _ti- 丨 aye "meta 丨 丨 izat_" to improve the ability of metal connection. Thicker metal layer 'makes the surface pattern of the sub-metal layer uneven. If there is a multi-layer metal layer structure, the subsequent metal-like surface will be transmitted more. The degree of unevenness is more serious, which will affect subsequent processes such as deposition, photography_Qg "aphy", side material. Therefore, the intermetallic dielectric layer (Inter Metal Die | ectric IMD) must have a good step M (step coverage) and hiding from flattening. In other words, a good step coverage can produce uniform coverage (c0nf_a | ca), and thereby achieve the purpose of flattening the surface. A non-uniform coverage Not only cannot achieve the purpose of flattening the surface, but even voids (VO) are expected to be generated between the metal wires, as shown in Figure 1. When the dielectric 2 is deposited on the metal wires 若, if the step coverage is When the thickness is poor and the thickness is thick enough, the adjacent A in Figure 1 will gradually approach and close together to form the so-called cavity B. In the photographic process, the photoresist will flow in from the cavity, resulting in the location of the cavity. The photoresist becomes thinner, which makes a hole formed during the etching of the dielectric layer and even affects the reliability of the underlying metal layer. At the same time, the photoresist flowing into the hole is not easy to be removed, which will cause contamination of the wafer in subsequent processes and make the product Yield is greatly reduced. Due to the growth of the chemical vapor deposition (CVD) dielectric _ electrical properties such as dioxide, please read the notes on the back before filling this page) 111-I 1 fn 1 0 -1 I. «φ --- This paper size is in accordance with the Chinese National Standard (CNS) A4 specification (2 〖0X297mm） A7 ______ Β7_ V. Description of the invention () Uniform coverage of 4¾ series', so spin-coated Spin is currently used -On-Glass (hereinafter referred to as SOG) solution 'can fill the space between metals by its similar photoresistive flow characteristics at room temperature' for the purpose of flattening. At the same time, the SOG material is a poor quality, impurity It has a large amount of silicon oxide, so it cannot directly contact the metal layer. It is necessary to isolate with a good quality oxidized stone, such as a CVD grown oxidized stone layer, to avoid pollution. Generally, IMD adopts a sandwich structure of CVD, fossil, and SOG / CVD silicon oxide. The first layer of CVD silicon oxide has isolation In addition to the efficacy, it can also provide the effect of increasing the adhesion of SOG to the metal layer. Because the flatness of SOG is related to the composition of the solution used, and generally, although the thicker the thickness, the better the flatness. However, the improvement in flatness will increase with the thickness. It is gradually saturated, and it is easy to cause shortcomings such as voids and easy cracking. Because the process of coating SOG at one time cannot meet the needs of the production line, the current production line uses a segmented SOG coating process. So that each s0g coating can reach a certain thickness without cracking and the best flatness improvement effect, and the final SOG has sufficient thickness and planarization effect through synthesis. However, the segmented SOG coating process is obviously accompanied by disadvantages such as wasted mountain time and large consumption of SOG costs, which is not in line with economic benefits. Or there are different SOG materials used in the segmented coating process, but this also has the disadvantage of being expensive. Therefore, how to propose a coating method that can significantly reduce man-hours and can save the cost of SOG consumption is an important issue for the industry. This paper method is made by the Chinese national 榇 rate Na ((Please read the notes on the back before filling in this page) Order printed by the Intellectual Property Bureau employee consumer cooperative of the Ministry of Economic Affairs 5. Description of the invention (Note 6) Figure 1 is an uneven sentence Figure 2 is a schematic diagram of the relationship between the thickness of SOG and the rotation speed of the wafer. Figure 3A is the relationship between the degree of planarization and the distance between metal wires according to the present invention, and Figure 2B is a schematic diagram that defines the degree of planarization. A comparison chart of the dry-side velocity of the conventional technology and the σg formed according to the present invention. Printed by the Ministry of Economic Affairs of the People's Republic of China and the Intellectual Property Bureau, the fourth day is a comparison chart of the heat recovery of the conventional technology and the SOG formed according to the present invention. Summary of the invention: The main purpose of the present invention is to provide a sog coating method that can greatly reduce man-hours and can save the cost of SOG consumption. The present invention is mainly to reduce the charm of crystal ambiguity to 0 rpm. With 300 rpm, the amount of SOG thrown by the centrifugal force is reduced, and the SOC can quickly fill the gap between the metal wires to achieve the thickness and flatness required for production, and only requires -SOG coating Discerning The segmented coating process, which is better known, obviously has the effects of significantly reducing man-hours and saving the cost of SOG. In order to make your inspection committee members more aware of the technical means of the present invention and its effects, the shrinkage rate (please read the precautions on the back first) Fill in this again 1) --- VI ---------. Τ1 nil It f. F. This paper is made of t HS furniture standard (CNS) A Regulation ^ (2 丨 Gx2 · Dong Ding B7 B7 Ministry of Economic Affairs智. ¾ Printed by the Bureau of Property Bureau 5. The invention description () is accompanied by a diagram and detailed description as follows: 426908 As previously described, the SOG system is essentially silicon oxide. It is a fluid-like liquid delivered to a stationary state. The wafer is then rotated in a self-rotating manner to uniformly coat the wafer. The current production line uses a high-speed rotation of 3000 revolutions per minute (rpm). Through a series of experiments, we found that the thickness of the SOG deposited and the wafer rotation speed The relationship diagram is shown in Figure 2. That is, the deposition thickness is inversely proportional to the rotation speed. The faster the speed, the thinner the deposition thickness. At the same time, the faster the speed, the greater the amount of SOG that the SOG solution is thrown off the wafer by centrifugal force. The faster the speed, the greater the cost of consuming SOG. The thicker the SOG deposition thickness, the easier it is to fill the gap between the metal wires, making the wafer surface smoother and flatter. The rotation speed currently used on the production line is about ㈤pm / min (“pm”). The SOG thickness obtained at a wafer rotation speed between 2000 rpm and 3,000 rpm is the most appropriate, that is, it meets the requirements of sufficient thickness without cracking. In comparing the present invention with Before the difference in flatness is known, the flatness is quantified first, and its definition is shown in FIG. 3B, that is, the ratio of the SOG height H1 on the metal wire to the SOG height H2 between the metal wires. Theoretically, when H1 and H2 are equal, the flatness ratio is 1. We first distributed SOG solutions of the same dose and the same composition on wafers with different sets of metal wire spacing, and then the rotation speed of each group of wafers was respectively rotated at the conventional high-speed segmented rotation and the low speed according to the present invention (that is, between 2 〇〇〇 This paper standard applies to China National Standards (CNS) A4 specifications (2 丨 0) < 297 Gong |) B7 V. Description of the invention () and interval) Rotate for about 12 seconds, and then according to Figure 3B The definition of the flatness is to obtain the flatness values obtained by the conventional technology and the present invention, and at the same time, a graph of the relationship between the number of flat sounds and the distance between the metal lines is made, as shown in FIG. 3A. It is obvious from Fig. 3a that the flatness of any one of the metal wire pitches obtained by low-speed rotation is higher than that of high-speed rotation. At the same time, as shown in Fig. 2, the thickness of Sog in the present invention is thicker than that of the conventional one. After the SOG solution coating is completed, the solvent needs to be evaporated through a baking process to form a solidified silicon oxide with dielectric isolation. In other words, SOG has the property of heat shrinkage, that is, the volume of SOG after heating will be Get smaller. The parameters of the baking process are 425 ° C and the time is 1 hour. Generally, the two parameters of dry etching rate and thermal shrinkage rate are used when testing the SOG characteristics. At present, we take the aforementioned five groups of SOG samples cracked by conventional techniques and according to the present invention, and measure the dry etching rate and volume change before and after baking respectively after a baking, and make a comparison as shown in Figure 4. A and four B are shown. Among them, the first five samples of the horizontal coordinate are the SOG cracked by the conventional technology, and the last five samples are SOG made according to the present invention. The conventional techniques and the present invention are taken from Figures 4A and 4B, respectively. It is obvious that the conventional technology is very similar to the SOG formed by the present invention, whether it is the dry etching rate or the thermal shrinkage rate. This means that the present invention does not affect other characteristics except for improving the flatness and thickness.
綜上所述，本發明較習知具有製程簡化，縮短工時，S〇G 姆繼用中·--- f琦先閲筇背面之注意寧項再填写本頁} .— *---： Γ —— ―. 1 裝 j 訂1 ---線.―: 經濟部智惡財產局員工消旁合作社印製 B7 五、發明説明（) — ^¾¾¾¾¾¾坦度較高等優點且不影響其他重要製程參數如乾 蝕刻率及熱收縮率等，故本發明較習知技術明顯具增進之功效， 極具產業上利用價值，爱依法提出發明專利之申請。又本發明之 最佳實_已於料巾揭露’凡熟悉本行齡據此所做單純組 合、等功《換皆不脫離以下所述之”專利翻之範轄。 111-------4-------ΐτ—------^. (诗先閲讀背面之注意事項再填寫本頁) 經濟部智.¾財產局員工消費合作社印製 本纸張尺度適用中國國家標準（CNS > A4規格（210；« 297公釐）To sum up, the present invention has a simplified process and shortened man-hours compared to the conventional ones. SoG is still in use. --- f Qi first read the note on the back and then fill out this page}.-* --- ： Γ —— ―. 1 book 1 order 1 --- line. ―: Printed by B7, Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs 5. Description of the invention () — ^ ¾¾¾¾¾¾¾ High degree of frankness without affecting other important Process parameters such as dry etching rate and thermal shrinkage rate, etc., so the present invention has significantly improved efficacy compared with the conventional technology, has great industrial use value, and loves to apply for an invention patent in accordance with the law. And the best practice of the present invention _ has been revealed on the material towel, 'everyone who is familiar with the age of the bank based on this simple combination, waiting for the change "do not depart from the following" patent translation. 111 ----- --4 ------- ΐτ -------- ^. (Read the notes on the back of the poem before filling out this page) Ministry of Economic Affairs. China National Standard (CNS > A4 specification (210; «297 mm)