TW360868B - Pulse generating circuit having address transition detecting circuit - Google Patents

Pulse generating circuit having address transition detecting circuit

Info

Publication number
TW360868B
TW360868B TW086106962A TW86106962A TW360868B TW 360868 B TW360868 B TW 360868B TW 086106962 A TW086106962 A TW 086106962A TW 86106962 A TW86106962 A TW 86106962A TW 360868 B TW360868 B TW 360868B
Authority
TW
Taiwan
Prior art keywords
circuit
pulse generating
input signal
address transition
transition detecting
Prior art date
Application number
TW086106962A
Other languages
English (en)
Inventor
Tetsuji Togami
Original Assignee
Nec Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Electronics Corp filed Critical Nec Electronics Corp
Application granted granted Critical
Publication of TW360868B publication Critical patent/TW360868B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/153—Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant
    • H03K5/1534—Transition or edge detectors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Pulse Circuits (AREA)
TW086106962A 1996-05-24 1997-05-23 Pulse generating circuit having address transition detecting circuit TW360868B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08153093A JP3087653B2 (ja) 1996-05-24 1996-05-24 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW360868B true TW360868B (en) 1999-06-11

Family

ID=15554828

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086106962A TW360868B (en) 1996-05-24 1997-05-23 Pulse generating circuit having address transition detecting circuit

Country Status (6)

Country Link
US (1) US6037815A (zh)
EP (1) EP0809359B1 (zh)
JP (1) JP3087653B2 (zh)
KR (1) KR100332011B1 (zh)
DE (1) DE69724696T2 (zh)
TW (1) TW360868B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020103212A1 (zh) * 2018-11-20 2020-05-28 中芯集成电路（宁波）有限公司上海分公司 摄像组件及其封装方法、镜头模组、电子设备
US10861895B2 (en) 2018-11-20 2020-12-08 Ningbo Semiconductor International Corporation Image capturing assembly and packaging method thereof, lens module and electronic device

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* Cited by examiner, † Cited by third party
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KR100272167B1 (ko) 1998-07-13 2000-11-15 윤종용 동기식 반도체 메모리 장치의 기준 신호 발생 회로
JP2002124858A (ja) * 2000-08-10 2002-04-26 Nec Corp 遅延回路および方法
US20040217794A1 (en) * 2003-04-30 2004-11-04 Mark Strysko Propagation delay adjustment circuit
US7167400B2 (en) * 2004-06-22 2007-01-23 Micron Technology, Inc. Apparatus and method for improving dynamic refresh in a memory device
TW200728968A (en) * 2006-01-20 2007-08-01 Arques Technology Taiwan Inc Power on reset circuit with low power consumption
KR100894105B1 (ko) * 2008-01-21 2009-04-20 주식회사 하이닉스반도체 컬럼선택신호 펄스폭 조절회로
KR100955682B1 (ko) * 2008-04-28 2010-05-03 주식회사 하이닉스반도체 센싱 지연회로 및 이를 이용한 반도체 메모리 장치
US11892956B2 (en) 2019-12-31 2024-02-06 Micron Technology, Inc. Performance of memory system background operations
US11728794B2 (en) * 2021-12-03 2023-08-15 Nanya Technology Corporation Data receiving circuit
US11770117B2 (en) 2021-12-07 2023-09-26 Nanya Technology Corporation Data receiving circuit

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JPS5954093A (ja) * 1982-09-21 1984-03-28 Toshiba Corp 半導体記憶装置
US4633102A (en) * 1984-07-09 1986-12-30 Texas Instruments Incorporated High speed address transition detector circuit for dynamic read/write memory
US4730131A (en) * 1985-01-28 1988-03-08 General Electric Company Input signal conditioning circuit
JPS62173692A (ja) * 1986-01-28 1987-07-30 Fujitsu Ltd 半導体集積回路
JPH0693616B2 (ja) * 1986-07-21 1994-11-16 沖電気工業株式会社 リセツト回路
JPS63311819A (ja) * 1987-06-15 1988-12-20 Nec Corp 出力回路
US4959816A (en) * 1987-12-28 1990-09-25 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US4985643A (en) * 1988-06-24 1991-01-15 National Semiconductor Corporation Speed enhancement technique for CMOS circuits
JP2532740B2 (ja) * 1989-10-18 1996-09-11 松下電器産業株式会社 アドレス遷移検出回路
US5103114A (en) * 1990-03-19 1992-04-07 Apple Computer, Inc. Circuit technique for creating predetermined duty cycle
US5465062A (en) * 1990-04-30 1995-11-07 Rohm Corporation Transition detector circuit
JP2991479B2 (ja) * 1990-11-16 1999-12-20 富士通株式会社 半導体集積回路及び半導体記憶装置
US5313422A (en) * 1991-05-29 1994-05-17 Texas Instruments Incorporated Digitally controlled delay applied to address decoder for write vs. read
JPH0554660A (ja) * 1991-08-26 1993-03-05 Seiko Epson Corp 半導体記憶装置
JP3088821B2 (ja) * 1992-03-18 2000-09-18 沖電気工業株式会社 パワーオンリセット回路
KR950004855B1 (ko) * 1992-10-30 1995-05-15 현대전자산업 주식회사 반도체 메모리 소자의 어드레스 전이 검출 회로
JPH07130174A (ja) * 1993-11-08 1995-05-19 Hitachi Ltd 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020103212A1 (zh) * 2018-11-20 2020-05-28 中芯集成电路（宁波）有限公司上海分公司 摄像组件及其封装方法、镜头模组、电子设备
US10861895B2 (en) 2018-11-20 2020-12-08 Ningbo Semiconductor International Corporation Image capturing assembly and packaging method thereof, lens module and electronic device
US11430825B2 (en) 2018-11-20 2022-08-30 Ningbo Semiconductor International Corporation Image capturing assembly, lens module and electronic device

Also Published As

Publication number Publication date
DE69724696D1 (de) 2003-10-16
JPH09320274A (ja) 1997-12-12
EP0809359A1 (en) 1997-11-26
KR970076814A (ko) 1997-12-12
US6037815A (en) 2000-03-14
EP0809359B1 (en) 2003-09-10
DE69724696T2 (de) 2004-07-15
KR100332011B1 (ko) 2002-09-27
JP3087653B2 (ja) 2000-09-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees