TW274149B - - Google Patents
Info
- Publication number
- TW274149B TW274149B TW084108961A TW84108961A TW274149B TW 274149 B TW274149 B TW 274149B TW 084108961 A TW084108961 A TW 084108961A TW 84108961 A TW84108961 A TW 84108961A TW 274149 B TW274149 B TW 274149B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6169639A JPH0837283A (en) | 1994-07-21 | 1994-07-21 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW274149B true TW274149B (en) | 1996-04-11 |
Family
ID=15890225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084108961A TW274149B (en) | 1994-07-21 | 1995-08-28 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0837283A (en) |
| KR (1) | KR100201719B1 (en) |
| TW (1) | TW274149B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100505597B1 (en) * | 1998-03-17 | 2005-10-12 | 삼성전자주식회사 | Bulk-Bias Voltage-Generating Circuits That Inhibit Latch-Up and Their Generation |
| US7112856B2 (en) | 2002-07-12 | 2006-09-26 | Samsung Electronics Co., Ltd. | Semiconductor device having a merged region and method of fabrication |
| JP2006100308A (en) * | 2004-09-28 | 2006-04-13 | Sanyo Electric Co Ltd | Semiconductor device, full wave rectification circuit, and half-wave rectification circuit |
| JP5041760B2 (en) | 2006-08-08 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | Semiconductor integrated circuit device |
-
1994
- 1994-07-21 JP JP6169639A patent/JPH0837283A/en active Pending
-
1995
- 1995-07-21 KR KR1019950021531A patent/KR100201719B1/en not_active IP Right Cessation
- 1995-08-28 TW TW084108961A patent/TW274149B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0837283A (en) | 1996-02-06 |
| KR100201719B1 (en) | 1999-06-15 |
| KR960005995A (en) | 1996-02-23 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |