TW202243802A - Method for producing wafer - Google Patents

Method for producing wafer Download PDF

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Publication number
TW202243802A
TW202243802A TW111108284A TW111108284A TW202243802A TW 202243802 A TW202243802 A TW 202243802A TW 111108284 A TW111108284 A TW 111108284A TW 111108284 A TW111108284 A TW 111108284A TW 202243802 A TW202243802 A TW 202243802A
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Taiwan
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wafer
aforementioned
main surface
holding means
resin
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TW111108284A
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Chinese (zh)
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多賀稜
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日商信越半導體股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B24B41/061—Work supports, e.g. adjustable steadies axially supporting turning workpieces, e.g. magnetically, pneumatically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

The present invention is a method for producing a wafer, the method including: pressing the wafer by a holding means and bringing a first main surface of the wafer into contact with a resin; pressing and spreading the resin on the first main surface of the wafer in a state in which a second main surface of the wafer is released from holding by the holding means, by blowing air from the holding means between the holding means and the second main surface while pressing and spreading the resin on the first main surface of the wafer; separating the wafer and the holding means while blowing air; after separation of the wafer and the holding means, curing the resin to obtain a composite body including a flattened resin layer; grinding or polishing the second main surface of the wafer with the composite body being chucked using the flattened resin layer as a reference surface; and grinding or polishing the first main surface of the wafer with the second main surface of the wafer being chucked. The present invention thus provides a method for producing a wafer that makes it possible to produce a wafer that has good warp and a favorable nan otopography.

Description

晶圓的製造方法Wafer Manufacturing Method

本發明有關一種晶圓的製造方法。尤其，本發明有關一種覆蓋形成方法及平面磨削技術，能夠製造翹曲和奈米形貌良好的晶圓。The invention relates to a wafer manufacturing method. In particular, the present invention relates to an overlay forming method and planar grinding technique capable of producing wafers with good warpage and nanometer topography.

基板晶圓亦被要求翹曲較小且良好，尤其是彎曲較小且良好，並且被稱為奈米形貌(以下NT)的較短波長的波紋較小且良好。作為用以達成後者的技術，存在一種加工方法，其對晶圓的單面覆蓋樹脂並加以磨削(例如專利文獻1～4)。The substrate wafer is also required to have small and good warpage, especially small and good bending, and small and good waviness of shorter wavelengths called nano-topography (hereinafter NT). As a technique for achieving the latter, there is a processing method in which one surface of a wafer is covered with a resin and ground (for example, Patent Documents 1 to 4).

例如，專利文獻2記載了在被保持手段吸引保持的晶圓的其中一面將液狀樹脂壓開來形成液狀樹脂的膜後，從保持手段的吸引面向下方噴出空氣，以此空氣的噴出壓力從吸引面將晶圓向下壓，使晶圓確實地從保持手段脫離。For example, Patent Document 2 describes that after one side of the wafer sucked and held by the holding means presses the liquid resin to form a film of the liquid resin, air is ejected downward from the suction surface of the holding means, so that the ejection pressure of the air The wafer is pushed down from the suction surface to securely release the wafer from the holding means.

又，專利文獻5揭示了在實行樹脂的覆蓋前的裝配時，儲存一面從吸引口噴出氣體一面改變按壓部與台部之間的距離時的壓力變化。 [先前技術文獻] (專利文獻) In addition, Patent Document 5 discloses a change in pressure when the distance between the pressing part and the table part is changed while ejecting gas from the suction port during assembly before resin coating. [Prior Art Literature] (patent documents)

專利文獻1：日本特開2009-148866號公報 專利文獻2：日本特開2020-92161號公報 專利文獻3：日本特開2007-134371號公報 專利文獻4：日本特開2010-155298號公報 專利文獻5：日本專利第5670208號說明書 Patent Document 1: Japanese Patent Laid-Open No. 2009-148866 Patent Document 2: Japanese Patent Laid-Open No. 2020-92161 Patent Document 3: Japanese Patent Laid-Open No. 2007-134371 Patent Document 4: Japanese Patent Laid-Open No. 2010-155298 Patent Document 5: Specification of Japanese Patent No. 5670208

[發明所欲解決的問題][Problem to be solved by the invention]

在上述專利文獻1所記載的方法中，樹脂按壓時的保持手段(平台)形狀被轉印到樹脂厚度分佈中，有時對加工後的晶圓形狀(翹曲)造成影響。作為以往技術，專利文獻2揭示了一種方法，樹脂按壓後(使晶圓從作為保持手段的上平台上分離後)藉由供給音波，來使晶圓的變形要素復原，但是並沒有一種在樹脂按壓過程中抑制保持手段形狀的轉印之技術。In the method described in the aforementioned Patent Document 1, the shape of the holding means (table) at the time of resin pressing is transferred to the resin thickness distribution, which may affect the wafer shape (warpage) after processing. As a prior art, Patent Document 2 discloses a method of restoring the deformed elements of the wafer by supplying sound waves after the resin is pressed (after the wafer is separated from the upper stage as a holding means), but there is no such method in the resin Technology that suppresses the transfer of the shape of the holding means during the pressing process.

本發明是為了解決上述問題而完成，其目的在於提供一種晶圓的製造方法，該製造方法能夠製造一種彎曲良好且奈米形貌良好的晶圓。 [解決問題的技術手段] The present invention is made to solve the above problems, and its purpose is to provide a method for manufacturing a wafer, which can manufacture a wafer with good curvature and good nano-morphology. [Technical means to solve the problem]

為了解決上述問題，本發明提供一種晶圓的製造方法，其特徵在於，包含以下步驟： 準備具有第一主面和位於前述第一主面相反側的第二主面之晶圓； 利用保持手段保持前述晶圓的前述第二主面； 以與前述晶圓的前述第一主面相對的方式配置可塑狀態的樹脂； 利用前述保持手段按壓前述晶圓，來使前述晶圓的前述第一主面接觸前述樹脂； 一面在前述晶圓的前述第一主面上將前述樹脂壓開，一面從前述保持手段對該保持手段與前述第二主面之間實行噴射空氣，藉此在將由前述保持手段對於前述晶圓的前述第二主面的保持予以釋放的狀態下，於前述晶圓的前述第一主面上將前述樹脂壓開； 一面實行前述噴射空氣，一面在前述晶圓與前述保持手段形成間隙，來使前述晶圓與前述保持手段分開； 在前述晶圓與前述保持手段的前述分開後，使前述樹脂硬化來製成平坦化樹脂層，而獲得包含前述晶圓和與前述晶圓的前述第一主面接觸的平坦化樹脂層之複合體； 以前述平坦化樹脂層作為基準面來吸附並保持前述複合體，在該狀態下磨削或研磨前述晶圓的第二主面； 從前述晶圓去除前述平坦化樹脂層；及， 吸附並保持前述晶圓的前述第二主面，在該狀態下磨削或研磨前述晶圓的前述第一主面。 In order to solve the above problems, the present invention provides a method for manufacturing a wafer, which is characterized in that it comprises the following steps: preparing a wafer having a first main surface and a second main surface opposite to the first main surface; Using holding means to hold the aforementioned second main face of the aforementioned wafer; Arranging the resin in a plastic state in a manner opposite to the aforementioned first main surface of the aforementioned wafer; pressing the wafer by the holding means, so that the first main surface of the wafer contacts the resin; While pressing the resin away from the first main surface of the wafer, air is sprayed from the holding means between the holding means and the second main surface, whereby the holding means will hold the wafer In the state where the holding of the aforementioned second main surface of the aforementioned wafer is released, the aforementioned resin is pressed apart on the aforementioned first main surface of the aforementioned wafer; While performing the aforementioned jetting of air, a gap is formed between the aforementioned wafer and the aforementioned holding means to separate the aforementioned wafer from the aforementioned holding means; After the aforementioned separation of the aforementioned wafer from the aforementioned holding means, the aforementioned resin is hardened to form a planarization resin layer, thereby obtaining a composite comprising the aforementioned wafer and the aforementioned first principal surface of the aforementioned wafer in contact with the aforementioned planarization resin layer. body; Adsorbing and holding the composite body with the planarizing resin layer as a reference plane, grinding or grinding the second main surface of the wafer in this state; removing the aforementioned planarizing resin layer from the aforementioned wafer; and, The second main surface of the wafer is sucked and held, and the first main surface of the wafer is ground or ground in this state.

根據本發明的晶圓的製造方法，一面實行噴射空氣一面在將由保持手段對於晶圓的第二主面的保持予以釋放的狀態下於晶圓的第一主面上將樹脂壓開，一面實行噴射空氣一面使晶圓與保持手段分開，在此分開後使樹脂硬化，藉此能夠抑制保持手段的形狀被轉印到晶圓，其結果，能夠製造一種彎曲良好且奈米形貌良好的晶圓。According to the wafer manufacturing method of the present invention, the resin is pushed apart on the first main surface of the wafer in a state where the holding of the second main surface of the wafer by the holding means is released while injecting air. The wafer is separated from the holding means by spraying air, and the resin is hardened after the separation, thereby preventing the shape of the holding means from being transferred to the wafer. round.

在前述晶圓與前述保持手段的前述分開時，可藉由在不改變保持手段的高度的情形下進行待機，從而利用前述樹脂的流動來在前述晶圓與前述保持手段之間形成前述間隙，並根據對前述保持手段施加的負重值來掌握前述間隙的形成。When the wafer is separated from the holding means, the gap can be formed between the wafer and the holding means by the flow of the resin by performing a stand-by without changing the height of the holding means, And the formation of the aforementioned gap is grasped based on the load value applied to the aforementioned holding means.

例如，能夠藉由一面噴射空氣一面以不改變保持手段的高度的方式進行待機，來實行晶圓與保持手段的分開。For example, it is possible to separate the wafer from the holding means by standing by while spraying air without changing the height of the holding means.

或者，在前述晶圓與前述保持手段的前述分開時，可利用前述保持手段的退開來形成前述晶圓與前述保持手段之間的前述間隙。Alternatively, when the aforementioned wafer is separated from the aforementioned holding means, the aforementioned gap between the aforementioned wafer and the aforementioned holding means can be formed by using the withdrawal of the aforementioned holding means.

如此一來，可藉由使保持手段從晶圓退開，來實行晶圓與保持手段的分開。藉由以這樣的方式進行，能夠以相對短的時間充分地確保晶圓與保持手段之間的間隙。 [發明的功效] In this way, separation of the wafer from the holding means can be performed by withdrawing the holding means from the wafer. By doing so, the gap between the wafer and the holding means can be sufficiently secured in a relatively short time. [Efficacy of the invention]

如以上所述，若是本發明的晶圓的製造方法，則能夠抑制保持手段的形狀被轉印到晶圓，其結果，能夠製造一種彎曲較小且良好並且奈米形貌較小且良好的晶圓。As described above, according to the wafer manufacturing method of the present invention, the transfer of the shape of the holding means to the wafer can be suppressed. wafer.

如上所述，尋求開發一種晶圓的製造方法，其能夠製造一種彎曲良好且奈米形貌良好的晶圓。As mentioned above, it is sought to develop a wafer manufacturing method capable of manufacturing a wafer with good curvature and good nano-morphology.

本發明人反覆專心研究上述問題，結果發現一面實行噴射空氣一面在將由保持手段對於晶圓的第二主面的保持予以釋放的狀態下於晶圓的第一主面上將樹脂壓開，一面實行噴射空氣一面使晶圓與保持手段分開，在此分開後使樹脂硬化，藉此能夠抑制保持手段的形狀被轉印到晶圓，其結果，能夠製造一種彎曲良好且奈米形貌良好的晶圓，從而完成本發明。The inventors of the present invention have repeatedly studied the above-mentioned problems, and as a result, it has been found that the resin is pushed apart on the first main surface of the wafer while spraying air while releasing the holding of the second main surface of the wafer by the holding means. The wafer is separated from the holding means by spraying air, and the resin is cured after the separation, thereby preventing the shape of the holding means from being transferred to the wafer. wafer, thereby completing the present invention.

亦即，本發明是一種晶圓的製造方法，其特徵在於，包含以下步驟： 準備具有第一主面和位於前述第一主面相反側的第二主面之晶圓； 利用保持手段保持前述晶圓的前述第二主面； 以與前述晶圓的前述第一主面相對的方式配置可塑狀態的樹脂； 利用前述保持手段按壓前述晶圓，來使前述晶圓的前述第一主面接觸前述樹脂； 一面在前述晶圓的前述第一主面上將前述樹脂壓開，一面從前述保持手段對該保持手段與前述第二主面之間實行噴射空氣，藉此在將由前述保持手段對於前述晶圓的前述第二主面的保持予以釋放的狀態下，於前述晶圓的前述第一主面上將前述樹脂壓開； 一面實行前述噴射空氣，一面在前述晶圓與前述保持手段形成間隙，來使前述晶圓與前述保持手段分開； 在前述晶圓與前述保持手段的前述分開後，使前述樹脂硬化來製成平坦化樹脂層，而獲得包含前述晶圓和與前述晶圓的前述第一主面接觸的平坦化樹脂層之複合體； 以前述平坦化樹脂層作為基準面來吸附並保持前述複合體，在該狀態下磨削或研磨前述晶圓的第二主面； 從前述晶圓去除前述平坦化樹脂層；及， 吸附並保持前述晶圓的前述第二主面，在該狀態下磨削或研磨前述晶圓的前述第一主面。 That is, the present invention is a method for manufacturing a wafer, characterized in that it comprises the following steps: preparing a wafer having a first main surface and a second main surface opposite to the first main surface; Using holding means to hold the aforementioned second main face of the aforementioned wafer; Arranging the resin in a plastic state in a manner opposite to the aforementioned first main surface of the aforementioned wafer; pressing the wafer by the holding means, so that the first main surface of the wafer contacts the resin; While pressing the resin away from the first main surface of the wafer, air is sprayed from the holding means between the holding means and the second main surface, whereby the holding means will hold the wafer In the state where the holding of the aforementioned second main surface of the aforementioned wafer is released, the aforementioned resin is pressed apart on the aforementioned first main surface of the aforementioned wafer; While performing the aforementioned jetting of air, a gap is formed between the aforementioned wafer and the aforementioned holding means to separate the aforementioned wafer from the aforementioned holding means; After the aforementioned separation of the aforementioned wafer from the aforementioned holding means, the aforementioned resin is hardened to form a planarization resin layer, thereby obtaining a composite comprising the aforementioned wafer and the aforementioned first principal surface of the aforementioned wafer in contact with the aforementioned planarization resin layer. body; Adsorbing and holding the composite body with the planarizing resin layer as a reference plane, grinding or grinding the second main surface of the wafer in this state; removing the aforementioned planarizing resin layer from the aforementioned wafer; and, The second main surface of the wafer is sucked and held, and the first main surface of the wafer is ground or ground in this state.

另一方面，專利文獻1～5並未記載或教示一面從保持手段實行噴射空氣一面在晶圓上將樹脂壓開，使晶圓與保持手段分開。On the other hand, Patent Documents 1 to 5 do not describe or teach to separate the wafer from the holding means by pressing the resin on the wafer while spraying air from the holding means.

以下，一面參照圖式一面詳細說明本發明，但是本發明不限於這些說明。再者，在圖式中，為了說明而誇張地繪示磨削前的晶圓的凹凸和保持手段的翹曲等，但是在本發明的晶圓的製造方法中，磨削前的晶圓的凹凸和保持手段的翹曲不限定於大到如所圖示的程度。Hereinafter, the present invention will be described in detail with reference to the drawings, but the present invention is not limited to these descriptions. In addition, in the drawings, the unevenness of the wafer before grinding and the warpage of the holding means are exaggeratedly drawn for explanation, but in the wafer manufacturing method of the present invention, the wafer before grinding The unevenness and the warping of the holding means are not limited to be as large as shown in the illustration.

第1圖和第2圖分別是繪示本發明的晶圓的製造方法的例子的概略流程圖。第2圖的例子除了第2圖(E)和第2圖(F)的步驟與第1圖(E)和第1圖(F)不同以外，其餘與第1圖的例子相同。以下，以第1圖的例子作為代表來進行說明，關於第2圖的例子，僅說明第2圖(E)和第2圖(F)的步驟。FIG. 1 and FIG. 2 are schematic flowcharts illustrating examples of the wafer manufacturing method of the present invention, respectively. The example in Fig. 2 is the same as the example in Fig. 1 except that the steps in Fig. 2 (E) and Fig. 2 (F) are different from those in Fig. 1 (E) and Fig. 1 (F). Hereinafter, the example in FIG. 1 will be described as a representative, and only the steps in FIG. 2 (E) and FIG. 2 (F) will be described for the example in FIG. 2 .

首先，如第1圖(A)所示，準備具有第一主面1A和位於此第一主面1A相反側的第二主面1B之晶圓1。所準備的晶圓1並無特別限定。First, as shown in FIG. 1(A), a wafer 1 having a first main surface 1A and a second main surface 1B opposite to the first main surface 1A is prepared. The prepared wafer 1 is not particularly limited.

繼而，如第1圖(B)所示，利用保持手段2保持晶圓1的第二主面1B。在此例中，使晶圓1的第二主面1B真空吸附於作為保持手段的上平台2來予以保持。經由貫穿上平台2上下的貫通孔2a進行真空抽吸，藉此上平台2能夠真空吸附晶圓1。Next, as shown in FIG. 1(B), the second main surface 1B of the wafer 1 is held by the holding means 2 . In this example, the second main surface 1B of the wafer 1 is held by vacuum suction on the upper stage 2 as holding means. Vacuum suction is performed through the through-holes 2 a penetrating the upper and lower sides of the upper platform 2 , whereby the upper platform 2 can vacuum-suction the wafer 1 .

另一方面，如第1圖(B)所示，以與晶圓1的第一主面1A相對的方式配置可塑狀態的樹脂5。在此例中，在具有平坦面的玻璃平台3(下平台)上鋪設透光性膜4，對其上供給可塑狀態、例如液狀的樹脂5。樹脂5只要能夠硬化，並無特別限定。On the other hand, as shown in FIG. 1(B), resin 5 in a plastic state is arranged to face first principal surface 1A of wafer 1 . In this example, a light-transmitting film 4 is laid on a glass platform 3 (lower platform) having a flat surface, and a plastic state, for example, liquid resin 5 is supplied thereon. The resin 5 is not particularly limited as long as it can be cured.

繼而，如第1圖(C)所示，利用保持手段2按壓晶圓1，來使晶圓1的第一主面1A接觸樹脂5。在此例中，使作為保持手段的上平台2下降，來從上方將吸附並保持於上平台2上的晶圓1向樹脂5推壓，使晶圓1的第一主面1A接觸樹脂5。Next, as shown in FIG. 1(C), the wafer 1 is pressed by the holding means 2 so that the first main surface 1A of the wafer 1 is brought into contact with the resin 5 . In this example, the upper stage 2 as the holding means is lowered to push the wafer 1 held by the upper stage 2 against the resin 5 from above, so that the first main surface 1A of the wafer 1 contacts the resin 5 .

樹脂5與晶圓1接觸後，開始噴射空氣。在此例中，如第1圖(D)所示，在樹脂5與晶圓1的第1主面1A接觸的點(對上平台2施加的負重超過設定負重(A)的位置)，從上平台2對上平台2與晶圓1的第二主面1B之間開始噴射空氣。能夠經由例如上平台2的貫通孔2a來實行空氣的噴射。After the resin 5 comes into contact with the wafer 1, air injection is started. In this example, as shown in FIG. 1 (D), at the point where the resin 5 contacts the first main surface 1A of the wafer 1 (the position where the load applied to the upper stage 2 exceeds the set load (A)), from Air is injected between the upper platform 2 and the upper platform 2 and the second main surface 1B of the wafer 1 . The injection of air can be performed through, for example, the through-hole 2 a of the upper platform 2 .

繼而，一面持續噴射空氣，一面使上平台2下降直到樹脂5充分展開為止。亦即，一面在晶圓1的第一主面1A上將樹脂5壓開一面實行噴射空氣。藉此，本發明在將由保持手段2對於晶圓1的第二主面1B的保持予以釋放的狀態下，於晶圓1的第一主面1上將樹脂5壓開。Then, while continuing to spray air, the upper table 2 is lowered until the resin 5 is fully developed. That is, the air is sprayed while pressing the resin 5 on the first main surface 1A of the wafer 1 . Thereby, the present invention presses the resin 5 away from the first main surface 1 of the wafer 1 in a state where the holding of the second main surface 1B of the wafer 1 by the holding means 2 is released.

實行噴射空氣的期間，晶圓1的第二主面1B的一部分可接觸上平台2(例如點接觸)，但是保持由保持手段2對於晶圓1的第二主面1B的保持被釋放的狀態。During the execution of the air injection, a part of the second main surface 1B of the wafer 1 may contact the upper platform 2 (for example, a point contact), but maintain a state where the holding of the second main surface 1B of the wafer 1 by the holding means 2 is released. .

藉由以這樣的方式一面噴射空氣一面從上方按壓樹脂5，來在上平台2與晶圓1的第2主面1B之間形成氣墊層，藉此，能夠抑制上平台2的形狀被轉印到晶圓1。By pressing the resin 5 from above while injecting air in this way, an air cushion layer is formed between the upper stage 2 and the second main surface 1B of the wafer 1, whereby the shape of the upper stage 2 can be suppressed from being transferred. to wafer 1.

繼而，以所設定的停止負重(B)來停止上平台2的下降。在此例中，以不改變作為保持手段的上平台2的高度的方式進行待機。這期間亦持續噴射空氣。藉此，樹脂5自然地逐漸展開，如第1圖(E)所示，在晶圓1與上平台2之間形成間隙2b。藉此，使晶圓1與上平台2分開。Then, the descent of the upper platform 2 is stopped with the set stop load (B). In this example, the stand-by is performed without changing the height of the upper platform 2 as holding means. Air is also continuously injected during this period. Thereby, the resin 5 gradually spreads naturally, and a gap 2b is formed between the wafer 1 and the upper stage 2 as shown in FIG. 1(E). Thereby, the wafer 1 is separated from the upper stage 2 .

繼而，如第1圖(E)所示，樹脂5自然地展開，在已充分確保上平台2與晶圓1的間隔的時機，停止噴射空氣。例如，掌握對上平台2施加的負重值，如果負重下降至設定負重(C)，則停止噴射空氣。Then, as shown in FIG. 1(E), the resin 5 spreads naturally, and when the distance between the upper stage 2 and the wafer 1 is sufficiently ensured, the injection of air is stopped. For example, the value of the load applied to the upper platform 2 is grasped, and when the load drops to the set load (C), jetting of air is stopped.

或者，如第2圖(E)所示，檢測到所設定的停止負重(B)後，亦可一面持續噴射空氣一面使上平台2退開(向上方向移動)，如果已充分確保上平台2與晶圓1的間隔，則停止噴射空氣，藉此使上平台2與晶圓1分開，在該等之間形成間隙2b。Or, as shown in Figure 2 (E), after detecting the set stop load (B), the upper platform 2 can also be retreated (moved upward) while continuously spraying air. If the upper platform 2 is fully secured The distance from the wafer 1 stops spraying air, thereby separating the upper platform 2 from the wafer 1 and forming a gap 2b between them.

藉由在充分確保晶圓1與上平台2的間隙的狀態下停止噴射空氣，能夠防止因晶圓1或樹脂5的彈性導致晶圓1與上平台2再次接觸。其結果，能夠更確實地防止上平台2的形狀經由晶圓1而被轉印到樹脂厚度。By stopping the blowing of air in a state where the gap between the wafer 1 and the upper stage 2 is sufficiently ensured, it is possible to prevent the wafer 1 and the upper stage 2 from coming into contact again due to the elasticity of the wafer 1 or the resin 5 . As a result, it is possible to more reliably prevent the shape of the upper stage 2 from being transferred to the thickness of the resin via the wafer 1 .

繼而，晶圓1與上平台2分開後，如第1圖(F)所示，使樹脂5硬化來製成平坦化樹脂層6，而獲得包含晶圓1和與晶圓1的第一主面1A接觸的平坦化樹脂層6之複合體10。Then, after the wafer 1 is separated from the upper platform 2, as shown in FIG. 1 (F), the resin 5 is hardened to make a planarization resin layer 6, and the first master including the wafer 1 and the wafer 1 is obtained. Composite 10 of planarized resin layer 6 in contact with surface 1A.

在此例中，由於下平台3是玻璃平台，因此藉由從下平台3的下方照射紫外線，從而紫外線能夠穿透下平台3和透光性膜4而照到樹脂5，使樹脂5硬化。再者，樹脂5的硬化手段不限於紫外線照射，能夠根據樹脂5的種類來適當變更。例如，當樹脂5是熱硬化性樹脂時，亦能夠利用熱量等外部刺激來實行硬化。In this example, since the lower platform 3 is a glass platform, by irradiating ultraviolet rays from below the lower platform 3 , the ultraviolet rays can pass through the lower platform 3 and the translucent film 4 and strike the resin 5 to harden the resin 5 . In addition, the hardening means of the resin 5 is not limited to ultraviolet irradiation, It can change suitably according to the kind of resin 5. For example, when the resin 5 is a thermosetting resin, it can also be cured by external stimuli such as heat.

在第2圖所示的例子中，亦如第2圖(E)所示，晶圓1與上平台2分開後，在第2圖(F)所示的狀態下使樹脂5硬化來製成平坦化樹脂層6。In the example shown in FIG. 2, as shown in FIG. 2(E), after the wafer 1 is separated from the upper stage 2, the resin 5 is cured in the state shown in FIG. 2(F). The resin layer 6 is planarized.

繼而，如第1圖(G)所示，以平坦化樹脂層6作為基準面來將複合體10移置至例如磨削台20，來吸附並保持複合體10。磨削台20，例如是多孔陶瓷製，能夠以真空吸附的方式保持複合體10。Next, as shown in FIG. 1(G), the composite 10 is moved to, for example, a grinding table 20 with the flattened resin layer 6 as a reference plane, and the composite 10 is adsorbed and held. The grinding table 20 is made of, for example, porous ceramics, and can hold the composite body 10 by vacuum suction.

繼而，如第1圖(H)所示，在被磨削台20吸附並保持的狀態下磨削或研磨晶圓1的第二主面1B。在此例中，使用磨輪30來磨削(第1磨削)晶圓1的第二主面1B，而獲得磨削後的第二主面1C。例如，以磨削後的總厚度變異量(TTV)成為1μm以下的方式進行磨削。Next, as shown in FIG. 1(H), the second main surface 1B of the wafer 1 is ground or polished while being sucked and held by the grinding table 20 . In this example, the second main surface 1B of the wafer 1 is ground (first ground) using the grinding wheel 30 to obtain the ground second main surface 1C. For example, grinding is performed so that the total thickness variation (TTV) after grinding becomes 1 μm or less.

繼而，如第1圖(I)所示，從晶圓1去除平坦化樹脂層6。在此例中，亦同時去除透光性膜4。Next, as shown in FIG. 1 (I), the planarization resin layer 6 is removed from the wafer 1 . In this example, the translucent film 4 is also removed at the same time.

繼而，如第1圖(J)所示，使晶圓1反轉，來利用磨削台20吸附並保持晶圓1的磨削後的第二主面1C，在該狀態下磨削或研磨晶圓1的第一主面1A。在此例中，使用磨輪30來磨削晶圓1的第一主面1A，而獲得磨削後的第一主面1D。Next, as shown in FIG. 1 (J), the wafer 1 is reversed, and the ground second main surface 1C of the wafer 1 is sucked and held by the grinding table 20, and ground or polished in this state. The first main surface 1A of the wafer 1 . In this example, the grinding wheel 30 is used to grind the first main surface 1A of the wafer 1 to obtain the ground first main surface 1D.

如第1圖(K)所示，以這樣的方式所獲得的晶圓1具有磨削後的第1主面1D和磨削後的第2主面1C。一面實行噴射空氣一面在將由保持手段(上平台)2對於晶圓1的第二主面1B的保持予以釋放的狀態下於晶圓1的第一主面1A上將樹脂5壓開，一面實行噴射空氣一面使晶圓1與保持手段2，在此分開後使樹脂5硬化，藉此，此晶圓1能夠防止保持手段(上平台)2的形狀被轉印到晶圓1。也就是，能夠製造一種彎曲(翹曲)較小且良好的晶圓。又，在平坦化樹脂層6以接觸的方式形成於晶圓1的第一主面1A上的狀態下磨削第二主面1B，繼而使晶圓1反轉，磨削第一主面1A，藉此能夠使奈米形貌小於目標值而使其良好。As shown in FIG. 1(K), the wafer 1 thus obtained has a ground first main surface 1D and a ground second main surface 1C. While spraying air, the resin 5 is pushed apart on the first main surface 1A of the wafer 1 while releasing the holding of the second main surface 1B of the wafer 1 by the holding means (upper stage) 2 . The wafer 1 is separated from the holding means 2 by spraying air, and then the resin 5 is cured, whereby the wafer 1 can prevent the shape of the holding means (upper stage) 2 from being transferred to the wafer 1 . That is, it is possible to manufacture a wafer with less warpage (warpage) and good quality. In addition, the second main surface 1B is ground in a state where the flattening resin layer 6 is formed in contact with the first main surface 1A of the wafer 1, and then the wafer 1 is turned over to grind the first main surface 1A. , whereby the nano-morphology can be made smaller than the target value to make it good.

另一方面，例如下文參照第3圖所說明，以往例的晶圓的製造方法無法製造一種彎曲較小且良好的晶圓。On the other hand, for example, as described below with reference to FIG. 3 , the wafer manufacturing method of the conventional example cannot manufacture a wafer with less warp and good quality.

在第3圖中示出概略流程圖的以往例的晶圓的製造方法，主要是第3圖(D)與作為例子示於第1圖(D)和第2圖(D)中的本發明的晶圓的製造方法不同。亦即，在第3圖所示的以往的方法中，樹脂5與晶圓1接觸後，亦不實行噴射空氣，而在維持由保持手段(上平台)2對晶圓1的第二主面1B的保持的狀態下於晶圓1的第一主面1A上持續將樹脂5壓開。其結果，如第3圖(E)所示，釋放了由上平台2進行的保持後，獲得轉印有上平台2的形狀之晶圓1。其結果，如第3圖(K)所示，使得磨削第二主面1B和第一主面1A後所獲得的晶圓1的彎曲較大。 [實施例] The wafer manufacturing method of the conventional example shown in Fig. 3 as a schematic flow chart is mainly Fig. 3 (D) and the present invention shown in Fig. 1 (D) and Fig. 2 (D) as examples The wafers are manufactured differently. That is, in the conventional method shown in FIG. 3 , after the resin 5 is in contact with the wafer 1, the air is not sprayed, and the second main surface of the wafer 1 is maintained by the holding means (upper platform) 2. The resin 5 is continuously pushed apart on the first main surface 1A of the wafer 1 in the held state of the wafer 1B. As a result, as shown in FIG. 3(E), after the holding by the upper stage 2 is released, the wafer 1 on which the shape of the upper stage 2 is transferred is obtained. As a result, as shown in FIG. 3(K), the wafer 1 obtained by grinding the second main surface 1B and the first main surface 1A is greatly warped. [Example]

以下，使用實施例及比較例來具體說明本發明，但是本發明不限定於這些例子。Hereinafter, although an Example and a comparative example are used and this invention is demonstrated concretely, this invention is not limited to these examples.

[實驗內容] (在晶圓上形成平坦化樹脂層) ＜實施例1-1～1-4＞ 在實施例1-1～1-4中，按照與第1圖(A)～第1圖(F)相同的流程，在以下條件下製作了包含晶圓和與晶圓的第一主面接觸的平坦化樹脂層之複合體。 [Experimental content] (Formation of a planarization resin layer on a wafer) <Examples 1-1 to 1-4> In Examples 1-1 to 1-4, according to the same process as in Fig. 1 (A) to Fig. 1 (F), the first main surface including the wafer and the first main surface contacting the wafer was produced under the following conditions: A composite of planarized resin layers.

◇覆蓋物(平坦化樹脂層)形成條件 ･作為晶圓，使用直徑300mm的P型單晶矽晶圓。 ･使用作為樹脂的紫外線(UV)硬化性樹脂、作為透光性膜的聚對苯二甲酸乙二酯(PET)膜。 ･在平坦的玻璃平台(下平台)鋪設PET膜，將10ml UV硬化性樹脂滴在PET膜上。 ･將晶圓的第二主面吸附並保持在陶瓷平台(上平台)，並使其朝向上述樹脂下降，藉此按壓樹脂。 ◇Cladding (flattening resin layer) formation conditions ･As the wafer, a P-type monocrystalline silicon wafer with a diameter of 300mm is used. ･Uses ultraviolet (UV) curable resin as resin and polyethylene terephthalate (PET) film as translucent film. ･Lay a PET film on a flat glass platform (lower platform), and drop 10ml of UV curable resin on the PET film. ･Attracts and holds the second main surface of the wafer on the ceramic stage (upper stage), and lowers it toward the above-mentioned resin, thereby pressing the resin.

･按壓控制是利用保持上平台的伺服馬達來驅動，在檢測到100N的規定負重(A)的時機停止真空吸附，開始噴射空氣。 ･一面持續噴射空氣一面使上平台下降，以2000N的停止負重(B)停止上平台下降。藉此，在將由上平台對於晶圓的第二主面的保持予以釋放的狀態下，於晶圓的第一主面上將樹脂壓開。 ･藉由在維持噴射空氣的狀態下進行待機，從而樹脂自然地展開，對上平台施加的負重減少。藉此，在晶圓與上平台之間形成間隙，使晶圓與上平台分開。 ･對上平台施加的負重減少至設定負重(C)後，停止噴射空氣。 ･照射紫外線，使樹脂硬化，來製成平坦化樹脂層。(照射紫外線時在晶圓與上平台之間存在間隙) ･此處，考慮到停止噴射空氣為止的由晶圓與上平台之間的間隙所造成的轉印的影響，實施了將設定負重(C)設為1500N(實施例1-1)、1000N(實施例1-2)、500N(實施例1-3)、100N(實施例1-4)的4例。 ･作為樹脂硬化用的光源，使用波長365nm的紫外線發光二極體(UV-LED)。 ･The pressing control is driven by the servo motor that keeps the upper stage, and the vacuum suction is stopped when the specified load (A) of 100N is detected, and the air injection starts. ･The upper platform is lowered while continuously injecting air, and the lowering of the upper platform is stopped with a stop load (B) of 2000N. Thereby, the resin is pushed apart on the first main surface of the wafer in a state where the holding of the second main surface of the wafer by the upper stage is released. ･By waiting while maintaining the state of injecting air, the resin spreads naturally and the load on the upper platform is reduced. Thereby, a gap is formed between the wafer and the upper platform, and the wafer is separated from the upper platform. ･When the load applied to the upper platform is reduced to the set load (C), stop spraying air. ･Ultraviolet rays are irradiated to harden the resin to create a flattened resin layer. (There is a gap between the wafer and the upper stage when irradiating ultraviolet rays) ･Here, in consideration of the influence of the transfer due to the gap between the wafer and the upper stage until the air injection is stopped, the set load (C) was set to 1500N (Example 1-1), 1000N ( 4 examples of embodiment 1-2), 500N (embodiment 1-3), 100N (embodiment 1-4). ･As a light source for resin curing, an ultraviolet light-emitting diode (UV-LED) with a wavelength of 365nm is used.

＜比較例2＞ 在比較例2中，按照與第3圖(A)～第3圖(F)相同的流程，製作了包含晶圓和與晶圓的第一主面接觸的平坦化樹脂層之複合體。具體而言，將按壓的控制從實施例1-1變更成如以下所述。 ＜Comparative example 2＞ In Comparative Example 2, a composite body including a wafer and a planarizing resin layer in contact with the first main surface of the wafer was produced in accordance with the same flow as in FIG. 3 (A) to FIG. 3 (F). Specifically, the pressing control was changed from Example 1-1 to the following.

･按壓控制是利用保持上平台的伺服馬達來驅動，以2000N的停止負重(B)停止上平台下降。這期間不噴射空氣，在以上平台保持晶圓的狀態下，於晶圓的第一主面上將樹脂壓開。 ･然後，停止真空吸附，開始噴射空氣。 ･使上平台上升並停止，進一步停止噴射空氣。藉此，在晶圓與上平台之間形成間隙。 ･照射紫外線，使樹脂硬化，製成平坦化樹脂層。(照射紫外線時在晶圓與上平台之間存在間隙) ･作為樹脂硬化用的光源，使用波長365nm的UV-LED。 ･The push control is driven by the servo motor that keeps the upper platform, and stops the upper platform from descending with a stop load (B) of 2000N. During this period, no air is injected, and the resin is pushed apart on the first main surface of the wafer while the wafer is held on the above platform. ･Then, the vacuum suction stops and the air jet starts. ･The upper platform is raised and stopped, further stopping the injection of air. Thereby, a gap is formed between the wafer and the upper platform. ･Ultraviolet rays are irradiated to harden the resin to create a flattened resin layer. (There is a gap between the wafer and the upper stage when irradiating ultraviolet light) ･A UV-LED with a wavelength of 365nm is used as the light source for resin curing.

＜實施例2-1～2-3＞ 在實施例2-1～2-3中，按照與第2圖(A)～第2圖(F)相同的流程，製作了包含晶圓和與晶圓的第一主面接觸的平坦化樹脂層之複合體。具體而言，將按壓的控制從實施例1-1變更成如以下所述。 <Examples 2-1 to 2-3> In Examples 2-1 to 2-3, according to the same flow as in Fig. 2 (A) to Fig. 2 (F), a flattening resin including a wafer and the first main surface of the wafer was produced. layer complex. Specifically, the pressing control was changed from Example 1-1 to the following.

･按壓控制是利用保持上平台的伺服馬達來驅動，在檢測到100N的規定負重(A)的時機停止真空吸附，開始噴射空氣。 ･一面持續噴射空氣一面使上平台下降，以2000N的停止負重(B)停止上平台下降。藉此，在將由上平台對於晶圓的第二主面的保持予以釋放的狀態下，於晶圓的第一主面上將樹脂壓開。 ･繼而，一面持續噴射空氣一面使上平台僅上升規定距離L並使其停止後，停止噴射空氣。藉此，在晶圓與上平台之間形成間隙。 ･照射紫外線，使樹脂硬化，製成平坦化樹脂層。(照射紫外線時在晶圓與上平台之間存在間隙) ･此處，考慮到由晶圓與上平台之間的間隙所造成的轉印的影響，實施了將上述規定距離L設為2μm(實施例2-1)、5μm(實施例2-2)、10μm(實施例2-3)的3例。 ･作為樹脂硬化用的光源，使用波長365nm的UV-LED。 ･The pressing control is driven by the servo motor that keeps the upper stage, and the vacuum suction is stopped when the specified load (A) of 100N is detected, and the air injection starts. ･The upper platform is lowered while continuously injecting air, and the lowering of the upper platform is stopped with a stop load (B) of 2000N. Thereby, the resin is pushed apart on the first main surface of the wafer in a state where the holding of the second main surface of the wafer by the upper stage is released. ･Then, while continuing to spray air, raise the upper platform by a predetermined distance L and stop it, then stop spraying air. Thereby, a gap is formed between the wafer and the upper platform. ･Ultraviolet rays are irradiated to harden the resin to create a flattened resin layer. (There is a gap between the wafer and the upper stage when irradiating ultraviolet light) ･Here, considering the effect of transfer due to the gap between the wafer and the upper stage, the above-mentioned predetermined distance L was set to 2 μm (Example 2-1), 5 μm (Example 2-2) , 3 examples of 10 μm (Example 2-3). ･A UV-LED with a wavelength of 365nm is used as the light source for resin curing.

(磨削加工) ＜比較例1＞ 在比較例1中，準備與實施例1-1中使用的相同的直徑300mm的P型單晶矽晶圓，對於此晶圓，在以下條件下實行磨削加工。 (grinding) ＜Comparative example 1＞ In Comparative Example 1, the same P-type single crystal silicon wafer with a diameter of 300 mm as used in Example 1-1 was prepared, and the wafer was ground under the following conditions.

＜實施例1-1～1-4、比較例2、實施例2-1～2-3＞ 在實施例1-1～1-4、比較例2、實施例2-1～2-3中，對於先前製作的複合體，在以下條件下實行磨削加工。 <Examples 1-1 to 1-4, Comparative Example 2, Examples 2-1 to 2-3> In Examples 1-1 to 1-4, Comparative Example 2, and Examples 2-1 to 2-3, grinding was carried out on the previously produced composites under the following conditions.

◇磨削加工條件 ･磨削加工中使用迪思科高公司製造的DFG8360(商品名)。 ･使用結合有金剛石磨粒之磨輪作為磨輪。 之後的磨削加工方法由於＜比較例1＞與除此以外的例子(＜比較例2＞、＜實施例1-1～1-4＞、＜實施例2-1～2-3＞)不同，因此個別地記載。 ◇Grinding conditions ･For the grinding process, DFG8360 (trade name) manufactured by Disco Co., Ltd. was used. ･Use a grinding wheel combined with diamond abrasive grains as the grinding wheel. The subsequent grinding method differs from the other examples (<Comparative Example 2>, <Examples 1-1 to 1-4>, <Examples 2-1 to 2-3>) in <Comparative Example 1> , so record them individually.

＜比較例1＞ 第一磨削加工條件(背面(第二主面)磨削) ･將晶圓的表面(第一主面)側真空吸附在磨削台上，實行背面(第二主面)的磨削加工。(無平坦化樹脂層) ＜Comparative example 1＞ The first grinding condition (back (second main surface) grinding) ･The front (first main surface) side of the wafer is vacuum-adsorbed on the grinding table, and the back surface (second main surface) is ground. (without planarizing resin layer)

第二磨削加工條件(表面(第一主面)磨削) ･將第一磨削面(磨削後的第二主面)真空吸附在磨削台上，實行表面(第一主面)的磨削加工。 ･藉由調整吸盤(chuck table)的軸角，來以晶圓厚度偏差成為1μm以下的方式實行調整。 Second grinding condition (surface (first main surface) grinding) ･The first grinding surface (second main surface after grinding) is vacuum-adsorbed on the grinding table, and the surface (first main surface) is ground. ･By adjusting the axis angle of the chuck table, it is adjusted so that the wafer thickness deviation becomes 1 μm or less.

＜比較例2＞、＜實施例1-1～1-4＞、＜實施例2-1～2-3＞ 第一磨削加工條件(背面(第二主面)磨削) ･真空吸附複合體的覆蓋物(平坦化樹脂層)側，實行背面(第二主面)的磨削加工。 ･磨削後將平坦化樹脂層剝離。 <Comparative Example 2>, <Examples 1-1 to 1-4>, <Examples 2-1 to 2-3> The first grinding condition (back (second main surface) grinding) ･On the cover (flattened resin layer) side of the vacuum adsorption composite, the back (second main surface) is ground. ･Peel off the flattening resin layer after grinding.

第二磨削加工條件(表面(第一主面)磨削) ･將第一磨削面(磨削後的第二主面)真空吸附在磨削台上，實行表面(第一主面)的磨削加工。 ･藉由調整吸盤的軸角，來以晶圓厚度偏差成為1μm以下的方式實行調整。 Second grinding condition (surface (first main surface) grinding) ･The first grinding surface (second main surface after grinding) is vacuum-adsorbed on the grinding table, and the surface (first main surface) is ground. ･By adjusting the axis angle of the chuck, it is adjusted so that the wafer thickness deviation becomes 1 μm or less.

(鏡面研磨加工) 對於用以上方式實行磨削加工後的各晶圓的表面、背面(磨削後的第一主面和第二主面)，實行鏡面研磨加工。 (Mirror Polishing) Mirror grinding is performed on the front and back surfaces (first and second main surfaces after grinding) of each wafer that has been ground in the above manner.

[測定結果] 鏡面研磨後用以下方式測定各晶圓的彎曲和奈米形貌(NT)。 [The measurement results] After mirror grinding, the bow and nanotopography (NT) of each wafer were determined in the following manner.

彎曲和NT的測定中使用光干渉式的平坦度/NT測定裝置(KLA公司製造：商品名WaferSight2＋)。 作為NT的指標，使用平方毫米(SQMM) 2mm×2mm。 將結果示於以下表1。 An optical interference-type flatness/NT measuring device (manufactured by KLA Corporation: trade name WaferSight2+) was used for the measurement of curvature and NT. As an index of NT, square millimeter (SQMM) 2mm×2mm is used. The results are shown in Table 1 below.

[表1]

Figure 02_image001
[Table 1]
Figure 02_image001

在比較例1中，由於以不形成平坦化樹脂層的方式實行磨削，因此彎曲和NT皆為不良。In Comparative Example 1, since grinding was performed so as not to form a flattening resin layer, both warpage and NT were unfavorable.

在比較例2中，雖然藉由形成平坦化樹脂層來實行磨削，從而NT為良好，但是由於在維持利用上平台進行的保持的狀態下於晶圓的第一主面上持續將樹脂壓開，因此發生平台形狀的轉印，使得彎曲不良。In Comparative Example 2, although the grinding was performed by forming a flattening resin layer, NT was good, but since the resin was continuously pressed on the first main surface of the wafer while maintaining the state of holding by the upper stage, Open, so the transfer of the terrace shape occurs, making the bending bad.

另一方面，在實施例1-1、1-2、1-3及1-4中，一面實行噴射空氣，一面在將利用上平台進行的保持予以釋放的狀態下於晶圓的第一主面上將樹脂壓開，在上平台與晶圓分開的狀態下使樹脂硬化來形成平坦化樹脂層，藉此緩和平台形狀的轉印，與比較例2相比，改善了彎曲。On the other hand, in Examples 1-1, 1-2, 1-3, and 1-4, while spraying air, the first main body of the wafer is released in a state where the holding by the upper stage is released. The resin was pushed apart on the surface, and the resin was cured while the upper stage was separated from the wafer to form a planarization resin layer, thereby relieving the transfer of the stage shape and improving warpage compared to Comparative Example 2.

尤其，在將噴射空氣的停止負重設為500N以下的實施例1-3和1-4中，停止噴射空氣時充分確保了晶圓與上平台之間的間隙，因此進一步改善了彎曲。In particular, in Examples 1-3 and 1-4 in which the air injection stop load was set to 500 N or less, the gap between the wafer and the upper stage was sufficiently secured when the air injection was stopped, thereby further improving bowing.

又，另一方面，在實施例2-1、2-2及2-3中，亦一面實行噴射空氣，一面在將利用上平台進行的保持予以釋放的狀態下於晶圓的第一主面上將樹脂壓開，在上平台與晶圓分開的狀態下使樹脂硬化來形成平坦化樹脂層，藉此緩和平台形狀的轉印，與比較例2相比，改善了彎曲。Also, on the other hand, in Examples 2-1, 2-2, and 2-3, while spraying air, the first main surface of the wafer is released in a state where the holding by the upper stage is released. The resin was pressed apart, and the resin was cured while the upper stage was separated from the wafer to form a planarization resin layer, thereby relieving the transfer of the stage shape and improving warpage compared to Comparative Example 2.

又，尤其在將噴射空氣過程中使上平台退開的距離設為5μm以上的實施例2-2和2-3中，停止噴射空氣時充分確保了晶圓與上平台之間的間隙，因此進一步改善了彎曲。In addition, especially in Examples 2-2 and 2-3, in which the distance to retract the upper stage during the air injection process was set to 5 μm or more, the gap between the wafer and the upper stage was sufficiently ensured when the air injection was stopped, so Further improved bending.

由以上結果可知，形成平坦化樹脂層時，一面實行噴射空氣，一面在將利用上平台進行的保持予以釋放的狀態下於晶圓的第一主面上將樹脂壓開，在上平台與晶圓分開的狀態下使樹脂硬化來形成平坦化樹脂層，藉此能夠防止平台形狀的轉印。From the above results, it can be seen that when forming the planarizing resin layer, while spraying air, the resin is pushed apart on the first main surface of the wafer while the holding by the upper stage is released, and the upper stage and the wafer are separated. The planarization resin layer is formed by curing the resin while the circles are separated, thereby preventing transfer of the plateau shape.

進一步可知，當藉由使上平台待機來實行上平台與晶圓的分開時，更理想是以停止噴射空氣時的負重設為500N以下為佳。It was further found that when the upper stage is separated from the wafer by making the upper stage stand by, it is more desirable to set the load when the air injection is stopped to 500N or less.

又，可知從縮短加工時間的觀點來看，以噴射空氣過程中使上平台退開為佳，更理想是以使上平台退開的距離設為5μm以上為佳。In addition, it can be seen that from the viewpoint of shortening the processing time, it is preferable to retract the upper stage during air injection, and it is more preferable to set the distance of retracting the upper stage at 5 μm or more.

再者，本發明並不限定於上述實施形態。上述實施形態為例示，任何具有實質上與本發明的申請專利範圍所記載的技術思想相同的構成且發揮相同功效者，皆包含在本發明的技術範圍內。In addition, this invention is not limited to the said embodiment. The above-mentioned embodiments are examples, and any one having substantially the same configuration as the technical idea described in the claims of the present invention and exerting the same effects is included in the technical scope of the present invention.

1:晶圓 1A,1D:第一主面 1B,1C:第二主面 2:保持手段(上平台) 2a:貫通孔 2b:間隙 3:玻璃平台(下平台) 4:透光性膜 5:樹脂 6:平坦化樹脂層 10:複合體 20:磨削台 30:磨輪 1: Wafer 1A, 1D: the first main surface 1B, 1C: the second main surface 2: Keep the means (on the platform) 2a: Through hole 2b: Clearance 3: Glass platform (lower platform) 4: Translucent film 5: Resin 6: Flattening the resin layer 10: Complex 20: Grinding table 30: grinding wheel

第1圖是繪示本發明的晶圓的製造方法的一例的概略流程圖。 第2圖是繪示本發明的晶圓的製造方法的另一例的概略流程圖。 第3圖是繪示以往的晶圓的製造方法的一例的概略流程圖。 FIG. 1 is a schematic flow chart showing an example of the wafer manufacturing method of the present invention. FIG. 2 is a schematic flowchart showing another example of the wafer manufacturing method of the present invention. FIG. 3 is a schematic flowchart showing an example of a conventional wafer manufacturing method.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

1:晶圓 1: Wafer

1A,1D:第一主面 1A, 1D: the first main surface

1B,1C:第二主面 1B, 1C: the second main surface

2:保持手段(上平台) 2: Keep the means (on the platform)

2a:貫通孔 2a: Through hole

2b:間隙 2b: Clearance

3:玻璃平台(下平台) 3: Glass platform (lower platform)

4:透光性膜 4: Translucent film

5:樹脂 5: Resin

6:平坦化樹脂層 6: Flattening the resin layer

10:複合體 10: Complex

20:磨削台 20: Grinding table

30:磨輪 30: grinding wheel

Claims (3)

一種晶圓的製造方法，其特徵在於，包含以下步驟： 準備具有第一主面和位於前述第一主面相反側的第二主面之晶圓； 利用保持手段保持前述晶圓的前述第二主面； 以與前述晶圓的前述第一主面相對的方式配置可塑狀態的樹脂； 利用前述保持手段按壓前述晶圓，來使前述晶圓的前述第一主面接觸前述樹脂； 一面在前述晶圓的前述第一主面上將前述樹脂壓開，一面從前述保持手段對該保持手段與前述第二主面之間實行噴射空氣，藉此在將由前述保持手段對於前述晶圓的前述第二主面的保持予以釋放的狀態下，於前述晶圓的前述第一主面上將前述樹脂壓開； 一面實行前述噴射空氣，一面在前述晶圓與前述保持手段形成間隙，來使前述晶圓與前述保持手段分開； 在前述晶圓與前述保持手段的前述分開後，使前述樹脂硬化來製成平坦化樹脂層，而獲得包含前述晶圓和與前述晶圓的前述第一主面接觸的平坦化樹脂層之複合體； 以前述平坦化樹脂層作為基準面來吸附並保持前述複合體，在該狀態下磨削或研磨前述晶圓的第二主面； 從前述晶圓去除前述平坦化樹脂層；及， 吸附並保持前述晶圓的前述第二主面，在該狀態下磨削或研磨前述晶圓的前述第一主面。 A method for manufacturing a wafer, characterized in that it comprises the following steps: preparing a wafer having a first main surface and a second main surface opposite to the first main surface; Using holding means to hold the aforementioned second main face of the aforementioned wafer; Arranging the resin in a plastic state in a manner opposite to the aforementioned first main surface of the aforementioned wafer; pressing the wafer by the holding means, so that the first main surface of the wafer contacts the resin; While pressing the resin away from the first main surface of the wafer, air is sprayed from the holding means between the holding means and the second main surface, whereby the holding means will hold the wafer In the state where the holding of the aforementioned second main surface of the aforementioned wafer is released, the aforementioned resin is pressed apart on the aforementioned first main surface of the aforementioned wafer; While performing the aforementioned jetting of air, a gap is formed between the aforementioned wafer and the aforementioned holding means to separate the aforementioned wafer from the aforementioned holding means; After the aforementioned separation of the aforementioned wafer from the aforementioned holding means, the aforementioned resin is hardened to form a planarization resin layer, thereby obtaining a composite comprising the aforementioned wafer and the aforementioned first principal surface of the aforementioned wafer in contact with the aforementioned planarization resin layer. body; Adsorbing and holding the composite body with the planarizing resin layer as a reference plane, grinding or grinding the second main surface of the wafer in this state; removing the aforementioned planarizing resin layer from the aforementioned wafer; and, The second main surface of the wafer is sucked and held, and the first main surface of the wafer is ground or ground in this state. 如請求項1所述之晶圓的製造方法，其中，在前述晶圓與前述保持手段的前述分開時，藉由在不改變保持手段的高度的情形下進行待機，從而利用前述樹脂的流動來在前述晶圓與前述保持手段之間形成前述間隙，並根據對前述保持手段施加的負重值來掌握前述間隙的形成。The wafer manufacturing method according to claim 1, wherein when the wafer is separated from the holding means, the flow of the resin is used to wait for the wafer without changing the height of the holding means. The gap is formed between the wafer and the holding means, and the formation of the gap is grasped based on the value of the load applied to the holding means. 如請求項1所述之晶圓的製造方法，其中，在前述晶圓與前述保持手段的前述分開時，利用前述保持手段的退開來形成前述晶圓與前述保持手段之間的前述間隙。The wafer manufacturing method according to claim 1, wherein when the wafer is separated from the holding means, the holding means is retracted to form the gap between the wafer and the holding means.
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