TW202045658A - Tape for electronic components and method for processing electronic components - Google Patents

Tape for electronic components and method for processing electronic components Download PDF

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TW202045658A
TW202045658A TW109109561A TW109109561A TW202045658A TW 202045658 A TW202045658 A TW 202045658A TW 109109561 A TW109109561 A TW 109109561A TW 109109561 A TW109109561 A TW 109109561A TW 202045658 A TW202045658 A TW 202045658A
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resin layer
tape
semiconductor wafer
thickness
electronic parts
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TW109109561A
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TWI764114B (en
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河內山拓哉
大倉雅人
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日商古河電氣工業股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/255—Polyesters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Provided are a tape for electronic components capable of adequately following in a short time even a semiconductor wafer having a high bump, and a method for processing electronic components. The tape for electronic components is characterized by having at least one resin layer 3, and is characterized in that: the indenter indention depth of the resin layer 3 at any temperature of 60-80 DEG C measured in accordance with ISO 14577 using a nanoindenter is 10,000-50,000 nm; the thickness of the resin layer 3 is 50-300 [mu]m; and the total thickness is 450 [mu]m or less.

Description

電子零件用膠帶及電子零件之加工方法Tape for electronic parts and processing method of electronic parts

本發明係有關電子零件用膠帶及電子零件之加工方法。更詳細係有關主要可適用於半導體晶圓的薄膜研削工程之電子零件用膠帶，與使用此電子零件用膠帶的電子零件之加工方法。The present invention relates to a tape for electronic parts and a processing method for electronic parts. In more detail, it relates to tapes for electronic parts, which are mainly applicable to the thin film grinding process of semiconductor wafers, and the processing methods of electronic parts using this tape for electronic parts.

在半導體晶圓之製造工程中，圖案形成後之半導體晶圓係通常，為了薄化其厚度，而於半導體晶圓背面施以背面研削加工，蝕刻等之處理。此時，以保護半導體晶圓表面的圖案之目的，於該圖案面貼附有半導體晶圓表面保護用膠帶。半導體晶圓表面保護用膠帶係一般而言，成為呈層積黏著劑層於基材薄膜而成，再於半導體晶圓的背面，貼附黏著劑層而使用(例如，參照專利文獻1)。In the manufacturing process of semiconductor wafers, the semiconductor wafers after pattern formation are usually processed by back grinding and etching on the back surface of the semiconductor wafers in order to thin the thickness. At this time, for the purpose of protecting the pattern on the surface of the semiconductor wafer, a tape for protecting the surface of the semiconductor wafer is attached to the pattern surface. The tape for protecting the surface of a semiconductor wafer is generally formed by laminating an adhesive layer on a base film, and then the adhesive layer is attached to the back surface of the semiconductor wafer and used (for example, refer to Patent Document 1).

近年，伴隨著行動電話或個人電腦等之小型化，高機能化，開發有比較於以往的半導體晶片的連接方法之打線接合，可省空間而安裝之覆晶安裝。覆晶安裝係在電性連接半導體晶片表面與基板時，經由形成於半導體晶圓表面的球狀或圓柱狀的凸塊而連接。如此之凸塊係以往，高度(厚度)為100μm以下之構成為主流，但對於半導體晶片之更小型化的要求，為了確保接合信賴性而提案有:將高度(厚度)呈超過200μm之凸塊進行再配線之WLCSP(Wafer level Chip Size Package)等。In recent years, with the miniaturization and high-performance of mobile phones and personal computers, the development of flip-chip mounting that is more space-saving than conventional semiconductor chip connection methods has been developed. Flip-chip mounting is used to electrically connect the surface of the semiconductor wafer and the substrate through spherical or cylindrical bumps formed on the surface of the semiconductor wafer. Such bumps have traditionally been the mainstream with a height (thickness) of 100μm or less. However, in order to ensure the reliability of the bonding, for the requirement of smaller semiconductor wafers: bumps with a height (thickness) exceeding 200μm WLCSP (Wafer level Chip Size Package) for rewiring etc.

使用以往的半導體晶圓表面保護用膠帶而進行如上述之晶圓的背面研削情況，因凸塊有著高度而半導體晶圓表面保護用膠帶係無法充分密著保持於晶圓表面。如此，自半導體晶圓表面保護用膠帶與晶圓的間隙，侵入有在研削時所噴射之切削水與矽的研削屑，而發生污染晶圓表面，稱為滲漏的現象。In the case of the back side grinding of the wafer as described above using the conventional tape for surface protection of semiconductor wafers, the tape for surface protection of semiconductor wafers cannot sufficiently adhere to the surface of the wafer due to the height of the bumps. In this way, from the gap between the tape for protecting the surface of the semiconductor wafer and the wafer, the cutting water and silicon grinding debris sprayed during the grinding enters, and the wafer surface is contaminated, which is called leakage.

因此，為了使半導體晶圓表面保護用膠帶順應半導體晶圓表面的凹凸，而提案有設置儲存模數為1×104 ～1×106 Pa之中間層於基材薄膜與黏著劑層之間的半導體晶圓表面保護用膠帶(例如，參照專利文獻2)。另外，亦提案有:於基材薄膜與黏著劑層之間，設置JIS-A硬度為10～55、厚度為25～400μm之熱可塑性樹脂中間層之半導體晶圓表面保護用膠帶(例如，參照專利文獻3，4)。 [先前技術文獻] [專利文獻]Therefore, in order to make the semiconductor wafer surface protection tape conform to the unevenness of the semiconductor wafer surface, it is proposed to provide an intermediate layer with a storage modulus of 1×10 4 to 1×10 6 Pa between the base film and the adhesive layer Tape for protecting the surface of a semiconductor wafer (for example, refer to Patent Document 2). In addition, it has also been proposed to provide a semiconductor wafer surface protection tape with a JIS-A hardness of 10 to 55 and a thickness of 25 to 400 μm between the base film and the adhesive layer with a thermoplastic resin intermediate layer (for example, see Patent documents 3, 4). [Prior Art Document] [Patent Document]

[專利文獻1]日本特開2000-8010號公報 [專利文獻2]日本特開2014-17336號公報 [專利文獻3]日本專利第4054113號公報 [專利文獻4]日本專利第3773358號公報[Patent Document 1] JP 2000-8010 A [Patent Document 2] JP 2014-17336 A [Patent Document 3] Japanese Patent No. 4054113 [Patent Document 4] Japanese Patent No. 3773358

[發明欲解決之課題][The problem to be solved by the invention]

但在記載於上述專利文獻之半導體晶圓表面保護用膠帶中，呈使半導體晶圓表面保護用膠帶順應半導體晶圓表面的凹凸之情況，在將半導體晶圓表面保護用膠帶貼合於半導體晶圓時，必須加熱半導體晶圓表面保護用膠帶而柔軟化之故，而有著對於貼合需要時間之問題。 為了解決課題之手段However, in the semiconductor wafer surface protection tape described in the above-mentioned patent documents, the semiconductor wafer surface protection tape is made to conform to the unevenness of the semiconductor wafer surface. The semiconductor wafer surface protection tape is attached to the semiconductor wafer. For rounding, the tape for protecting the surface of the semiconductor wafer must be heated to soften it, and there is a problem that it takes time for bonding. To solve the problem

因此，本發明之目的係提供:對於具有高度大的凸塊之半導體晶圓而言，可以短時間充分順應之電子零件用膠帶及電子零件的加工方法。Therefore, the object of the present invention is to provide a tape for electronic parts and a processing method for electronic parts that can fully comply with a semiconductor wafer having a large bump in a short time.

為了解決上述課題，有關本申請發明之電子零件用膠帶係其特徵為至少有一層的樹脂層，而前述樹脂層係使用奈米壓痕機，在依照ISO14577而測定之60℃～80℃之任一溫度中之前述奈米壓痕機之壓頭的押入深度為10000nm～50000nm，而前述樹脂層之厚度為50μm～300μm，總厚度450μm以下者。In order to solve the above-mentioned problems, the adhesive tape for electronic parts of the present invention is characterized by having at least one resin layer, and the aforementioned resin layer is measured at any temperature between 60°C and 80°C measured in accordance with ISO14577 using a nanoindenter. The penetration depth of the indenter of the nanoindenter at a temperature is 10000nm～50,000nm, and the thickness of the resin layer is 50μm～300μm, and the total thickness is 450μm or less.

另外，上述電子零件用膠帶係前述樹脂層係在60～80℃之熱傳導率至少為0.30W/m･K以上者為佳。In addition, it is preferable that the above-mentioned adhesive tape for electronic parts has a thermal conductivity of at least 0.30 W/m･K or more of the resin layer at 60 to 80°C.

上述電子零件用膠帶係貼合於設置有10μm以上之階差的半導體晶圓之電路形成面為佳。The above-mentioned tape for electronic parts is preferably attached to the circuit formation surface of a semiconductor wafer provided with a step difference of 10 μm or more.

上述電子零件用膠帶係前述樹脂層的厚度為前述階差之1倍以上2倍以下者為佳。The above-mentioned tape for electronic parts preferably has a thickness of the resin layer that is 1 time or more and 2 times or less of the aforementioned step.

另外，為了解決上述課題，經由本申請發明的電子零件之加工方法係其特徵為具有:於設置有10μm以上之階差的半導體晶圓之電路形成面，以50～100℃的溫度而貼合上述電子零件用膠帶的貼合工程，和在前述貼合工程之後，研削與前述半導體晶圓的電路形成面相反側的面之研削工程。In addition, in order to solve the above-mentioned problems, the method of processing electronic parts invented by the present application is characterized by: bonding the circuit forming surface of a semiconductor wafer with a step difference of 10 μm or more at a temperature of 50-100°C The bonding process of the above-mentioned tape for electronic parts and the grinding process of grinding the surface opposite to the circuit formation surface of the semiconductor wafer after the bonding process.

上述電子零件的加工方法係在前述貼合工程中之貼合速度為3mm/S以上者為佳。 發明效果The processing method of the above-mentioned electronic parts is preferably the one where the bonding speed in the above-mentioned bonding process is 3mm/S or more. Invention effect

如根據有關本發明之電子零件用膠帶，對於具有高度大的凸塊之半導體晶圓而言，亦可由短時間使其充分順應者。For example, the tape for electronic parts according to the present invention can be fully compliant in a short time for semiconductor wafers with large bumps.

以下，依據圖面而詳細說明本發明之實施形態。圖1係模式性地顯示有關本發明之實施形態的電子零件用膠帶1之構造的剖面圖。Hereinafter, embodiments of the present invention will be described in detail based on the drawings. Fig. 1 is a cross-sectional view schematically showing the structure of an electronic component tape 1 according to an embodiment of the present invention.

如圖1所示，有關本實施形態之電子零件用膠帶1係具有基材薄膜2，而於基材薄膜2之至少單面側係設置有樹脂層3。對於樹脂層3之上面係設置有黏著劑層4，而對於黏著劑層4之上面，係脫模處理表面之剝離薄膜5之脫模處理面則呈接合於黏著劑層4側而進行層積。然而，在本實施形態中係設置有剝離薄膜，但並非必須設置剝離薄膜5。As shown in FIG. 1, the adhesive tape 1 for electronic parts concerning this embodiment has a base film 2, and the resin layer 3 is provided on at least one side of the base film 2. The upper surface of the resin layer 3 is provided with an adhesive layer 4, and on the upper surface of the adhesive layer 4, the release surface of the release film 5, which is a release treatment surface, is laminated on the adhesive layer 4 side. . However, in this embodiment, a release film is provided, but the release film 5 is not necessarily provided.

以下，對於本實施形態之電子零件用膠帶1之各構成要素，詳細進行說明。Hereinafter, each component of the tape 1 for electronic parts of this embodiment is demonstrated in detail.

(基材薄膜2) 作為本發明之電子零件用膠帶1的基材薄膜2，可使用公知的塑料，橡膠等。基材薄膜2係特別對於黏著劑層4使用放射線硬化性的組成物之情況，選擇其組成物產生硬化之波長的放射線之透過性佳的構成為佳。然而，在此，放射線係指:例如，總稱如紫外線的光線，或者雷射光，或如電子束之電離性放射線之構成，以下，總稱此等而稱為放射線。(Substrate film 2) As the base film 2 of the tape 1 for electronic parts of the present invention, well-known plastics, rubbers, etc. can be used. The base film 2 is particularly suitable for the case where a radiation-curable composition is used for the adhesive layer 4, and it is preferable to select a composition having a high transmittance of radiation of a wavelength at which the composition is cured. However, here, radiation refers to: for example, a general term such as ultraviolet rays, or laser light, or ionizing radiation such as electron beams. Hereinafter, these are collectively referred to as radiation.

作為如此之基材薄膜2而可選擇之樹脂的例，係可使用高密度聚乙烯(HDPE)、低密度聚乙烯(LDPE)、聚丙烯(PP)、乙烯-乙酸乙烯共聚物(EVA)、乙烯丙烯酸共聚物或乙烯甲基丙烯酸共聚物與此等之金屬交聯體(離子交聯聚合物)等之聚烯烴類，或聚乙烯對苯二甲酸酯(PET)、聚萘二甲酸乙二酯(PEN)、聚對苯二甲酸丁二酯(PBT)等之聚酯類，或使丙烯酸樹脂交聯而作成薄膜狀之構成者。各個樹脂係可以單獨作為單層基材而使用，或組合樹脂進行混合，以及作為不同之樹脂的複層構成亦可。另外，調配為了辨識•識別半導體晶圓表面保護黏著膠帶1之著色用顏料等，在對於物性未有影響的範圍而加上添加物亦可。As examples of resins that can be selected for such a base film 2, high-density polyethylene (HDPE), low-density polyethylene (LDPE), polypropylene (PP), ethylene-vinyl acetate copolymer (EVA), Polyolefins such as ethylene acrylic acid copolymer or ethylene methacrylic acid copolymer and these metal crosslinkers (ionomers), or polyethylene terephthalate (PET), polyethylene naphthalate Polyesters such as diesters (PEN) and polybutylene terephthalate (PBT), or crosslinked acrylic resins to form a film-like structure. Each resin system can be used alone as a single-layer substrate, or a combination of resins for mixing, or as a multi-layer structure of different resins. In addition, it is possible to add additives in the range that does not affect the physical properties of the coloring pigment for the identification and recognition of the semiconductor wafer surface protective adhesive tape 1.

基材薄膜2係為了作為電子零件用膠帶1之處理性或半導體晶圓6之薄膜研削時之彎曲抑制，在25℃之拉伸彈性率為0.01～10GPa者佳，而0.1～5GPa為更佳。 更且，基材薄膜2為最表面之情況係對於要求可承受經由電子零件用膠帶1之加熱貼合，或半導體晶圓6之研磨等之加工熱之同時，使用於在電子零件用膠帶1之剝離時，加熱壓著熱封膜於膠帶背面再進行剝離之工程的情況，熔點為70～170℃為佳，而90～140℃為更佳。The base film 2 is used as an adhesive tape 1 for electronic parts or for suppressing bending of the semiconductor wafer 6 during film grinding. The tensile elastic modulus at 25°C is preferably 0.01-10 GPa, and 0.1-5 GPa is more preferable. . Furthermore, the case where the base film 2 is the outermost surface is required to be able to withstand the heat of processing through the tape 1 for electronic parts, or the heat of processing such as the polishing of the semiconductor wafer 6, and is used in the tape 1 for electronic parts. In the case of peeling, heating and pressing the heat-sealing film on the back of the tape and then peeling it off, the melting point is preferably 70-170°C, and more preferably 90-140°C.

基材薄膜2之厚度係無特別加以限定，而適宜作設定即可，為10～300μm，又25～100μm為佳。The thickness of the base film 2 is not particularly limited, and can be set appropriately, and is preferably 10 to 300 μm, and preferably 25 to 100 μm.

上述基材薄膜2之製造方法係無特別加以限定。可使用壓延法，T字模壓出法，吹塑法等以往的方法。另外，亦可為以接著劑等而貼合獨立製膜之薄膜與其他的薄膜而作為基材薄膜。The manufacturing method of the said base film 2 is not specifically limited. The calendering method, T-die extrusion method, blow molding method and other conventional methods can be used. In addition, a film formed separately and another film may be bonded together with an adhesive or the like as a base film.

對於設置有基材薄膜2之樹脂層3側的表面，為了使與樹脂層3之密著性提升，而適宜實施電暈處理或設置底漆層等之處理亦可。然而，將未設置有基材薄膜2之樹脂層3側的表面，進行粗糙化加工或滑劑塗層亦為理想，而經由此，可得到本發明之電子零件用膠帶1保管時之阻隔防止等的效果。For the surface on the resin layer 3 side where the base film 2 is provided, in order to improve the adhesion with the resin layer 3, treatments such as corona treatment or provision of a primer layer may be suitably performed. However, it is also ideal to roughen or coat the surface of the resin layer 3 on which the base film 2 is not provided. Through this, it is possible to obtain the barrier prevention during storage of the tape 1 for electronic parts of the present invention And so on.

對於使用於在電子零件用膠帶1之剝離時，加熱壓著熱封膜於膠帶背面再進行剝離之工程的情況，於未設置有基材薄膜2之樹脂層3側的表面，設置具有熱封與接著性之塗層或樹脂層亦為理想。此等熱封層的熔點係70～170℃為佳，而90～140℃為更佳。特別是作為基材薄膜2，對於使用PET等之高熔點材料的情況係熱封層為有效。When it is used in the process of peeling off the tape 1 for electronic parts, heat and press the heat-sealing film on the back of the tape and then peel it off. On the surface of the resin layer 3 side where the base film 2 is not provided, a heat seal Adhesive coating or resin layer is also ideal. The melting point of these heat-sealing layers is preferably 70-170°C, and more preferably 90-140°C. In particular, as the base film 2, a heat-sealing layer is effective when a high melting point material such as PET is used.

(樹脂層3) 作為構成樹脂層3之樹脂係使用樹脂層3之奈米壓痕機，在依照ISO14577所測定之60℃～80℃任一溫度之前述奈米壓痕機的壓頭之押入深度如成為10000nm～50000nm之構成，未特別限定而可使用公知的樹脂。(Resin layer 3) As the resin system constituting the resin layer 3, a nanoindenter for the resin layer 3 is used, and the penetration depth of the indenter of the aforementioned nanoindenter at any temperature of 60°C to 80°C measured in accordance with ISO14577 becomes 10000nm~ The configuration of 50000 nm is not particularly limited, and a known resin can be used.

作為樹脂層3而可選擇之樹脂的例，係可舉出:聚乙烯，乙烯-乙酸乙烯共聚物，乙烯-丙烯酸乙基共聚物，乙烯-丙烯酸甲基共聚物，乙烯-丙烯酸共聚物，離子交聯聚合物等之α-烯烴之單獨聚合物或共聚物。各個樹脂係亦可以單獨作為單層而使用，或組合樹脂進行混合，以及作為不同之樹脂的複層構成亦可。Examples of resins that can be selected for the resin layer 3 include: polyethylene, ethylene-vinyl acetate copolymer, ethylene-acrylic acid ethyl copolymer, ethylene-acrylic acid methyl copolymer, ethylene-acrylic acid copolymer, ion Single polymer or copolymer of α-olefin such as cross-linked polymer. Each resin system can also be used as a single layer alone, or a combination of resins for mixing, or a multiple layer structure of different resins.

樹脂層3係使用奈米壓痕機，在依照ISO14577所測定之60℃～80℃任一溫度之奈米壓痕機的壓頭之押入深度為10000nm～50000nm。當奈米壓痕機的壓頭之押入深度則在60℃～80℃任一溫度為不足10000nm時，對於充分使電子零件用膠帶1順應於半導體晶圓6表面之凹凸61需要時間。The resin layer 3 uses a nano indenter, and the penetration depth of the indenter of the nano indenter at any temperature of 60°C to 80°C measured in accordance with ISO14577 is 10000nm-50000nm. When the penetration depth of the indenter of the nanoindenter is less than 10,000 nm at any temperature of 60°C to 80°C, it takes time to fully conform the tape 1 for electronic parts to the unevenness 61 on the surface of the semiconductor wafer 6.

奈米壓痕機的壓頭之押入深度則在60℃～80℃任一溫度亦超過50000nm時，根據經由加熱貼合而過度變形之故，而電子零件用膠帶1之厚度精確度變差之情況，或樹脂層3外露於半導體晶圓6之側面的情況，在沿著半導體晶圓6側面而切斷電子零件用膠帶1時而成為毛邊或團塊，污染半導體晶圓6。當於樹脂層3之切斷部分產生有毛邊等時，在研削或研磨半導體晶圓6的背面時，毛邊等則捲入至加工面，對於半導體晶圓6產生有側緣裂縫，以及產生斷裂。另外，在半導體晶圓6之乾式研磨等之研磨時，在經由加工的摩擦熱亦有超過60℃，認為有成為半導體晶圓6之破損或厚度精確度不良之情況。更且，在電子零件用膠帶1之輸送或保管中，高溫時係亦有超過60℃之狀況，而亦認為有經由在電子零件用膠帶1之端部產生軟化，將電子零件用膠帶1作為卷狀物而進行輸送或保管之情況在端部的誤著或產生軟化之樹脂的周邊污染。When the penetration depth of the indenter of the nanoindenter exceeds 50,000nm at any temperature of 60℃～80℃, the thickness accuracy of the tape 1 for electronic parts deteriorates due to excessive deformation through heating and bonding In this case, or when the resin layer 3 is exposed on the side surface of the semiconductor wafer 6, when the electronic component tape 1 is cut along the side surface of the semiconductor wafer 6, it becomes burrs or clumps and contaminates the semiconductor wafer 6. When there are burrs or the like in the cut portion of the resin layer 3, when grinding or polishing the back surface of the semiconductor wafer 6, the burrs and the like are drawn into the processing surface, causing side edge cracks and fractures in the semiconductor wafer 6 . In addition, during polishing such as dry polishing of the semiconductor wafer 6, the frictional heat through the processing also exceeds 60° C., which may cause damage to the semiconductor wafer 6 or poor thickness accuracy. Furthermore, in the transportation or storage of the electronic component tape 1, the temperature may exceed 60°C at high temperature. It is also believed that the end of the electronic component tape 1 is softened and the electronic component tape 1 is used as When the roll is transported or stored, the end may be misapplied or the softened resin may be contaminated.

奈米壓痕機的壓頭之押入深度係依照ISO14577‐1:2002，使用奈米壓痕機，施加負載於該奈米壓痕機之金剛鑽所成之三角錐(Berkovich)壓頭，加上10mN的力於試料面的深度作為零，從此加上50mN的力為止而押入該壓頭時之壓頭到達深度。The penetration depth of the indenter of the nano indenter is in accordance with ISO14577-1:2002, using a nano indenter to apply a load to the triangular cone (Berkovich) indenter formed by the diamond drill of the nano indenter, plus The force of 10mN is zero at the depth of the sample surface, and the indenter reaches the depth when the indenter is pushed in until the force of 50mN is added.

樹脂層3之60～80℃的奈米壓痕機的壓頭之押入深度係例如，樹脂的密度或共聚單體共聚物之情況係可由共聚單體含有比率而進行調整。乙烯-乙酸乙烯共聚物，乙烯-丙烯酸甲酯共聚物，乙烯丙烯酸丁酯之情況係共聚單體含有率10～50質量%為佳，而25～45%為更佳。α-烯烴之情況係密度為0.87～0.93為佳，而0.88～0.90為更佳。另外，可由樹脂的分子量而進行調整，重量平均分子量則10000～200000為佳，而40000～80000為更佳。The penetration depth of the indenter of the nanoindenter at 60 to 80°C of the resin layer 3 is, for example, the density of the resin or the comonomer copolymer can be adjusted by the comonomer content ratio. In the case of ethylene-vinyl acetate copolymer, ethylene-methyl acrylate copolymer, and ethylene butyl acrylate, the comonomer content is preferably 10-50% by mass, and more preferably 25-45%. In the case of α-olefin, the density is preferably 0.87 to 0.93, and 0.88 to 0.90 is more preferable. In addition, it can be adjusted by the molecular weight of the resin, and the weight average molecular weight is preferably 10,000 to 200,000, and more preferably 40,000 to 80,000.

在樹脂層3之60～80℃的熱傳導率則至少為0.30W/m･K以上，更理想係在70℃中為0.4W/m･K以上。熱傳導率係依照JIS A1412所測定。為了將在樹脂層3之60～80℃的熱傳導率作為0.30W/m･K以上，係除了使用具有如此特性的樹脂以外，含有熱傳導性充填材亦可。作為熱傳導性充填材係選自無機氮化物，無機氧化物，金屬之一種或二種以上的構成為佳，作為具體例係可舉出:氮化鋁，氮化硼等之無機氮化物，氧化鋁，氧化矽，氧化鎂等之無機氧化物，金，銀，鎳，鋁等之金屬，滑石，碳酸鈣，二氧化矽等之防堵劑。其中，表現絕緣性與高熱傳導之氮化鋁為佳。更理想係為了耐水性提升，可舉出作成表面處理之氮化鋁。此等係混合1種或2種以上而使用亦可。樹脂層3中之充填物之含有比例係對於樹脂層3之總質量而言，3～60質量%為佳，而20～50質量%為更佳。The thermal conductivity of the resin layer 3 at 60 to 80°C is at least 0.30 W/m･K or more, and more preferably 0.4 W/m･K or more at 70°C. The thermal conductivity is measured in accordance with JIS A1412. In order to make the thermal conductivity at 60 to 80°C of the resin layer 3 0.30 W/m･K or more, in addition to using a resin having such characteristics, a thermally conductive filler may be included. As the thermally conductive filler, one or two or more types selected from inorganic nitrides, inorganic oxides and metals are preferred. Specific examples include inorganic nitrides such as aluminum nitride, boron nitride, and oxides. An anti-blocking agent for inorganic oxides such as aluminum, silicon oxide, magnesium oxide, metals such as gold, silver, nickel, aluminum, talc, calcium carbonate, and silicon dioxide. Among them, aluminum nitride, which exhibits insulation and high thermal conductivity, is preferred. It is more desirable to improve the water resistance, for example, aluminum nitride for surface treatment. These systems may mix and use 1 type or 2 or more types. The content of the filler in the resin layer 3 is preferably 3-60% by mass, and more preferably 20-50% by mass relative to the total mass of the resin layer 3.

對於樹脂層3係因應必要，含有安定劑、滑劑、氧化防止劑、顔料、可塑劑等亦可。但經由添加劑的種類，含有量係亦有污染黏著劑層或半導體晶圓之情況之故，而其情況係設置阻障層於樹脂層3與黏著劑層之間為佳。The resin layer 3 may contain stabilizers, slip agents, oxidation inhibitors, pigments, plasticizers, etc. as necessary. However, depending on the type of additive, the content may also contaminate the adhesive layer or the semiconductor wafer. In this case, it is better to provide a barrier layer between the resin layer 3 and the adhesive layer.

樹脂層3的厚度係50～300μm，而150～270μm為佳。當樹脂層3之厚度不足50μm時，使電子零件用膠帶1充分順應於半導體晶圓6之表面的凹凸61則變為困難。當樹脂層3之厚度超過300μm時，在使電子零件用膠帶1加熱貼合於半導體晶圓6表面時，熱傳導性變差而對於樹脂層3作為柔軟化將花上時間之故，對於使電子零件用膠帶1充分順應於半導體晶圓6之表面的凹凸61需花上時間。The thickness of the resin layer 3 is 50-300 μm, preferably 150-270 μm. When the thickness of the resin layer 3 is less than 50 μm, it becomes difficult to make the tape 1 for electronic parts fully conform to the unevenness 61 on the surface of the semiconductor wafer 6. When the thickness of the resin layer 3 exceeds 300 μm, when the electronic component tape 1 is heated and bonded to the surface of the semiconductor wafer 6, the thermal conductivity deteriorates and it will take time for the resin layer 3 to soften. It takes time for the component tape 1 to fully conform to the unevenness 61 on the surface of the semiconductor wafer 6.

另外，樹脂層3之厚度係半導體晶圓6表面的階差之1倍以上2倍以下為佳。當樹脂層3之厚度不足半導體晶圓6表面之階差的1倍時，有著無法使電子零件用膠帶1充分順應於半導體晶圓6之表面的凹凸61之虞。當樹脂層3之厚度超過半導體晶圓6表面之階差的2倍時，在加熱貼合電子零件用膠帶1於半導體晶圓6表面時，熱傳導性變差而對於樹脂層3作為柔軟化將花上時間之故，對於使電子零件用膠帶1充分順應於半導體晶圓6之表面的凹凸61需花上時間。In addition, the thickness of the resin layer 3 is preferably 1 to 2 times the step difference on the surface of the semiconductor wafer 6. When the thickness of the resin layer 3 is less than 1 time the step difference of the surface of the semiconductor wafer 6, there is a possibility that the tape 1 for electronic parts cannot fully conform to the unevenness 61 of the surface of the semiconductor wafer 6. When the thickness of the resin layer 3 exceeds 2 times the step difference on the surface of the semiconductor wafer 6, when the adhesive tape 1 for bonding electronic parts is heated to the surface of the semiconductor wafer 6, the thermal conductivity deteriorates and the resin layer 3 is softened. Because it takes time, it takes time for the electronic component tape 1 to fully conform to the unevenness 61 on the surface of the semiconductor wafer 6.

樹脂層3之層積方法係未特別限制，但例如，可舉出:由T字模押出機押出成形為薄膜狀之同時，與預先準備之基材薄膜2進行層壓的方法，將基材薄膜2與基材薄膜3各進行製膜而進行乾式層壓或熱層壓之方法，經由共押出基材薄膜2與樹脂層3而同時進行製膜之方法等。共押出的方法係除了T字模押出法之外，可舉出吹塑法等。The laminating method of the resin layer 3 is not particularly limited, but for example, it may be a method of laminating the base film 2 with the base film 2 prepared in advance while being extruded into a film by a T-die extruder. 2. A method of forming a film with the base film 3 and performing dry lamination or thermal lamination, a method of simultaneously forming a film by co-extruding the base film 2 and the resin layer 3, etc. The method of co-extrusion is not only the T-die extrusion method, but also the blow molding method.

(黏著劑層4) 構成黏著劑層4之黏著劑組成物係未特別限制，而可使用以往的構成，但可舉出:將(甲基)丙烯酸酯作為構成成分之單獨聚合物，或作為構成成分而具有(甲基)丙烯酸酯之共聚物。作為構成成分而含有丙烯酸酯之聚合物的單體成分係，例如，可舉出:甲基，乙基，n-丙基、異丙基，n-丁基，t-丁基，異丁基，戊基，異戊基，己基，庚基，環己基，2-乙基己基，辛基，異辛基，壬基，異壬基，癸基，異癸基，十一烷基，月桂基，十三烷基，十四烷基，十八烷醯，十八烷基，及十二烷基等之碳數30以下，理想係具有碳數4～18之直鏈或分歧的烷基之丙烯酸烷酯或甲基丙烯酸烷酯。此等烷基(甲基)丙烯酸酯係亦可單獨使用，或併用2種以上。(Adhesive layer 4) The adhesive composition system constituting the adhesive layer 4 is not particularly limited, and conventional constitutions can be used, but examples include: (meth)acrylate as a constituent polymer alone, or as a constituent having (former Base) acrylate copolymer. The monomer component system of a polymer containing acrylate as a constituent component, for example, includes: methyl, ethyl, n-propyl, isopropyl, n-butyl, t-butyl, isobutyl , Pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl , Tridecyl, tetradecyl, octadecyl, octadecyl, dodecyl, etc., with carbon number 30 or less, ideally having a straight chain or branched alkyl group with 4 to 18 carbon atoms Alkyl acrylate or methacrylate. These alkyl (meth)acrylates can also be used alone or in combination of two or more.

作為上述以外之丙烯酸樹脂中的構成成分係可含有以下的單體。例如，可舉出丙烯酸，甲基丙烯酸，羧乙基(甲基)丙烯酸酯，羧基戊基(甲基)丙烯酸酯，衣康酸，馬來酸，丁烯二酸，及巴豆酸等之羧基含有單分子，無水順丁烯二酸，或衣康酸酐等之酸酐單分子，(甲基)丙烯酸2-羥乙基，(甲基)丙烯酸2-羥丙基，(甲基)丙烯酸4-羥基丁基，(甲基)丙烯酸6-羥基已基，(甲基)丙烯酸8-羥基辛基，(甲基)丙烯酸10-羥基癸基，(甲基)丙烯酸12-羥基十二烷基，及(4-羥甲基環己烷)甲基(甲基)丙烯酸等之羥基含有單分子，苯乙烯磺酸，丙烯基磺酸，2-(甲基)丙烯醯胺-2-甲基丙烷磺酸，(甲基)丙烯醯胺丙烷磺酸，磺丙基(甲基)丙烯酸，及(甲基)丙烯醯氧基奈磺酸等之磺酸基含有單分子；2-羥乙基丙烯醯基磷酸等之磷酸基含有單分子，(甲基)丙烯醯胺，(甲基)丙烯酸N-羥甲基醯胺、(甲基)丙烯酸烷基胺基(例如、甲基丙烯酸二甲氨基乙酯、t-丁基胺基甲基丙烯酸乙酯等)、N-乙烯吡咯烷酮、丙烯醯基嗎啉、乙酸乙烯酯、苯乙烯、丙烯腈等。此等單體成分係亦可單獨使用，或併用2種以上。The following monomers may be contained as constituent components in acrylic resins other than the above. Examples include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, butenedioic acid, and crotonic acid. Containing monomolecular, anhydrous maleic acid, or itaconic anhydride and other acid anhydrides, (meth)acrylic acid 2-hydroxyethyl, (meth)acrylic acid 2-hydroxypropyl, (meth)acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxydodecyl (meth)acrylate, And (4-hydroxymethylcyclohexane)methyl(meth)acrylic acid and other hydroxyl groups contain single molecules, styrene sulfonic acid, propenyl sulfonic acid, 2-(meth)acrylamide-2-methylpropane Sulfonic acid, (meth)acrylamide propane sulfonic acid, sulfopropyl (meth)acrylic acid, and (meth)acrylic acid oxynaphthalenesulfonic acid, etc. The sulfonic acid group contains a single molecule; 2-hydroxyethyl propylene Phosphoric acid groups such as acyl phosphoric acid contain a single molecule, (meth)acrylamide, (meth)acrylic acid N-methylolamide, (meth)acrylic acid alkylamino group (for example, methacrylic acid dimethylamino group) Ethyl ester, t-butylamino ethyl methacrylate, etc.), N-vinylpyrrolidone, acrylomorpholine, vinyl acetate, styrene, acrylonitrile, etc. These monomer components can also be used alone or in combination of two or more.

另外，作為丙烯酸樹脂，作為構成成分，可含有以下之多官能性單體。作為其例，可舉出:己二醇二(甲基)丙烯酸酯，(聚)乙二醇二(甲基)丙烯酸酯，(聚)丙二醇二(甲基)丙烯酸酯，新戊二醇二(甲基)丙烯酸酯，季戊四醇二(甲基)丙烯酸酯，三羥甲基丙烷三(甲基)丙烯酸酯，四甲醇甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二聚季戊四醇單羥基(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、及胺甲酸乙酯(甲基)丙烯酸酯等。此等多官能性單體係亦可單獨使用，或併用2種以上。In addition, the acrylic resin may contain the following polyfunctional monomers as constituent components. Examples thereof include: hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate (Meth) acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, tetramethanolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol Tetra(meth)acrylate, dipentaerythritol monohydroxy (meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, and amine Ethyl formate (meth)acrylate and the like. These multifunctional single systems can also be used alone or in combination of two or more.

作為丙烯酸酯係可舉出:丙烯酸乙酯，丙烯酸丁酯，丙烯酸2-乙基己基，丙烯酸環氧丙基，丙烯酸2-羥基乙基等。另外，可使用將上述之丙烯酸酯，例如取代為甲基丙烯酸酯之構成等之丙烯酸系聚合物與硬化劑而成之構成。Examples of acrylic acid esters include ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, glycidyl acrylate, 2-hydroxyethyl acrylate, and the like. In addition, a structure obtained by substituting the above-mentioned acrylic ester, for example, with an acrylic polymer such as a methacrylic ester, and a curing agent can be used.

作為硬化劑，係可使用記載於日本特開2007-146104號公報的硬化劑。例如，可舉出:對於1,3-雙(N,N-二缩水甘油氨甲基)環己烷，1,3-雙(N,N-二缩水甘油氨甲基)甲苯，1,3-雙(N,N-二缩水甘油氨甲基)苯環，N,N,N,N’-四缩水甘油基-m-間苯二甲胺等之分子中具有2個以上之環氧基之環氧化合物，對於2,4-二異氰酸甲苯酯，2,6-二異氰酸甲苯酯，1,3-二甲苯二異氰酸酯，1,4-二甲苯二異氰酸酯，二苯甲烷-4,4’-二異氰酸酯等之分子中具有2個以上之異氰酸酯基之異氰酸酯系化合物，對於四羥甲基-三-β-氮丙啶基丙酸酯，三羥甲基-三-β-氮丙啶基丙酸酯、三羥甲基丙烷-三-β-氮丙啶基丙酸酯、三羥甲基丙烷-三-β-(2-丙烯亞胺)丙酸鹽等之分子中具有2個以上之氮丙啶基之氮丙啶系化合物等。硬化劑的含有量係如因應期望的黏著力或儲存模數而做調整即可，而對於上述聚合物100質量份而言，0.01～10質量份為理想，更理想為0.1～5質量份。As the curing agent, the curing agent described in JP 2007-146104 A can be used. For example, for 1,3-bis(N,N-diglycidylaminomethyl)cyclohexane, 1,3-bis(N,N-diglycidylaminomethyl)toluene, 1,3 -Bis(N,N-diglycidylaminomethyl)benzene ring, N,N,N,N'-tetraglycidyl-m-m-xylylenediamine and other molecules have more than 2 epoxy groups The epoxy compound, for 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-xylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane- 4,4'-diisocyanate and other isocyanate compounds having two or more isocyanate groups in the molecule, for tetramethylol-tris-β-aziridinyl propionate, trimethylol-tri-β- In the molecule of aziridinyl propionate, trimethylolpropane-tris-β-aziridinyl propionate, trimethylolpropane-tris-β-(2-propylene imine) propionate, etc. An aziridine compound having two or more aziridinyl groups, etc. The content of the hardener can be adjusted in accordance with the desired adhesive force or storage modulus. For 100 parts by mass of the above polymer, 0.01-10 parts by mass is ideal, and more preferably 0.1-5 parts by mass.

經由使光聚合性化合物及光聚合啟始劑含於如上述之黏著劑層4中之時，經由照射紫外線而進行硬化，而黏著劑層4係可使黏著力降低。作為如此之光聚合性化合物，係廣泛使用如揭示於日本特開昭60-196956號公報及日本特開昭60-223139號公報，於可經由光照射而作為三次元網化之分子內，至少具有2個以上光聚合性碳-碳二重結合之低分子量化合物。When the photopolymerizable compound and the photopolymerization initiator are contained in the adhesive layer 4 as described above, they are cured by irradiating ultraviolet rays, and the adhesive layer 4 can reduce the adhesive force. As such a photopolymerizable compound, it is widely used as disclosed in Japanese Patent Laid-Open No. 60-196956 and Japanese Patent Laid-Open No. 60-223139. In the molecule that can be irradiated with light as a three-dimensional network, at least A low-molecular-weight compound with two or more photopolymerizable carbon-carbon double bonds.

具體而言，係可適用三羥甲基丙烷三丙烯酸酯，三丙烯酸季戊四醇酯，四丙烯酸季戊四醇酯，二季戊四醇單羥基丙烯酸酯，雙季戊四醇六丙烯酸酯，或者1,4- 丁二醇二丙烯酸酯，1,6-己二醇二丙烯酸酯，聚乙二醇雙丙烯酸酯，市售的寡酯丙烯酸酯等。Specifically, it is applicable to trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxy acrylate, dipentaerythritol hexaacrylate, or 1,4 - butanediol diacrylate , 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, etc.

作為光聚合啟始劑，係可使用記載於日本特開2007-146104或日本特開2004-186429號公報之光聚合啟始劑。可併用安息香異丙醚，安息香異丁醚，二甲基苯酮，米氏酮，氯噻吨酮，苄基甲基縮酮，α-羥環己基苯基酮，2-羥甲基苯基丙烷等。As the photopolymerization initiator, the photopolymerization initiator described in JP 2007-146104 or JP 2004-186429 A can be used. Can be used together with benzoin isopropyl ether, benzoin isobutyl ether, dimethyl phenone, Michler's ketone, chlorothiaxanthone, benzyl methyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl Propane etc.

作為黏著劑層4，可使用具有光聚合性碳-碳二重結合於聚合物中之聚合物，光聚合啟始劑，及使用含有硬化劑之樹脂組成物而成之光聚合性黏著劑。作為具有碳-碳二重結合於聚合物中之聚合物，以1種或2種以上之任意的方法而單獨聚合或共聚合於側鏈具有碳原子數為4～12，更理想為碳原子數8之烷基之(甲基)丙烯酸酯等之單體或共聚合性改質單體的(甲基)丙烯酸系聚合物。As the adhesive layer 4, a polymer having a photopolymerizable carbon-carbon double bond in a polymer, a photopolymerization initiator, and a photopolymerizable adhesive made of a resin composition containing a hardener can be used. As a polymer having a carbon-carbon double bond in the polymer, it is polymerized alone or copolymerized by any of one or two or more methods in the side chain having 4 to 12 carbon atoms, more preferably carbon atoms Monomers such as (meth)acrylate esters of alkyl groups with the number of 8 or (meth)acrylic polymers of copolymerizable modified monomers.

其他，對於構成黏著劑層4之黏著劑組成物，係因應必要而可調配黏著賦予劑，黏著調整劑，界面活性劑等，或者其他的改質劑等。另外，適宜添加無機化合物充填劑亦可。In addition, for the adhesive composition constituting the adhesive layer 4, an adhesive imparting agent, an adhesive modifier, a surfactant, etc., or other modifiers, etc. may be prepared as necessary. In addition, an inorganic compound filler may be added as appropriate.

黏著劑層4係例如，可由塗佈黏著劑組成物於剝離薄膜5上，使其乾燥而轉印於樹脂層3而形成。在本發明之黏著劑層4之厚度係理想為1～130μm、更理想為1～40μm、又更理想為1～20μm。在本發明之黏著劑層4之作用係主要確保對於半導體晶圓6表面之黏著性及剝離性。當黏著劑層4為厚時，經由其儲存模數係有妨礙對於半導體晶圓6之順應性，或成為對於半導體晶圓6之殘糊的要因之可能性。The adhesive layer 4 is formed, for example, by applying an adhesive composition on the release film 5, drying it, and transferring it to the resin layer 3. The thickness of the adhesive layer 4 in the present invention is desirably 1 to 130 μm, more desirably 1 to 40 μm, and still more desirably 1 to 20 μm. The function of the adhesive layer 4 in the present invention is mainly to ensure the adhesion and peelability to the surface of the semiconductor wafer 6. When the adhesive layer 4 is thick, its storage modulus may hinder the compliance with the semiconductor wafer 6 or become the main cause of the residue of the semiconductor wafer 6.

黏著劑層4與樹脂層3之合計厚度係半導體晶圓6表面之凹凸高度以上為佳。樹脂層3單獨的厚度係半導體晶圓6表面之凹凸高度的1.0～2.0倍為更佳。It is preferable that the total thickness of the adhesive layer 4 and the resin layer 3 is equal to or greater than the height of the unevenness on the surface of the semiconductor wafer 6. The thickness of the resin layer 3 alone is preferably 1.0 to 2.0 times the height of the unevenness on the surface of the semiconductor wafer 6.

(剝離薄膜5) 另外，對於表面保護用黏著膠帶1係設置剝離薄膜5於黏著劑層4上亦可。剝離薄膜5係為了保護間隔件或剝離層，亦稱為剝離襯墊，黏著劑層4之目的，另外，為了將黏著劑作為平滑之目的所設置。作為剝離薄膜5之構成材料，係可舉出:聚乙烯，聚丙烯，聚乙烯對苯二甲酸酯等之合成樹脂薄膜或紙等。對於剝離薄膜5的表面，係為了提高自黏著劑層4之剝離性，因應必要而施以聚矽氧處理，長鏈烷基處理，氟處理等之剝離處理亦可。另外，因應必要，黏著劑層4則呈未經由環境紫外線等未企圖之紫外線的暴露而產生反應，而施以紫外線防止處理亦為理想。剝離薄膜5之厚度係通常為10～100μm、理想係25～50μm程度。(Release film 5) In addition, a release film 5 may be provided on the adhesive layer 4 for the adhesive tape 1 for surface protection. The release film 5 is provided for the purpose of protecting the spacer or the release layer, which is also called a release liner, and the adhesive layer 4, and is provided for the purpose of smoothing the adhesive. As a constituent material of the release film 5, synthetic resin films such as polyethylene, polypropylene, polyethylene terephthalate, paper, and the like can be cited. For the surface of the release film 5, in order to improve the releasability of the self-adhesive layer 4, a release treatment such as silicone treatment, long-chain alkyl treatment, fluorine treatment, etc. may be applied as necessary. In addition, if necessary, the adhesive layer 4 is not exposed to unintended ultraviolet rays such as ambient ultraviolet rays, and it is also desirable to apply ultraviolet rays to prevent treatment. The thickness of the release film 5 is usually 10-100 μm, and ideally about 25-50 μm.

本發明之電子零件用膠帶1係總厚度為450μm以下。在本發明中，總厚度係指:在作為電子零件用膠帶所使用之狀態的厚度，而對於設置有剝離薄膜5之情況，係剝離剝離薄膜5之後的電子零件用膠帶1之厚度。當電子零件用膠帶1之總厚度超過450μm時，在使電子零件用膠帶1加熱貼合於半導體晶圓6表面時，熱傳導性變差而對於樹脂層3作為柔軟化將花上時間之故，對於使電子零件用膠帶1充分順應於半導體晶圓6之表面的凹凸61需花上時間。The tape 1 for electronic parts of the present invention has a total thickness of 450 μm or less. In the present invention, the total thickness refers to the thickness in the state used as an adhesive tape for electronic parts, and when the release film 5 is provided, it refers to the thickness of the adhesive tape 1 for electronic parts after the release film 5 is peeled off. When the total thickness of the electronic component tape 1 exceeds 450 μm, when the electronic component tape 1 is heated and bonded to the surface of the semiconductor wafer 6, the thermal conductivity deteriorates and it takes time to soften the resin layer 3. It takes time for the electronic component tape 1 to fully conform to the unevenness 61 on the surface of the semiconductor wafer 6.

＜使用方法＞ 接著，對於本發明之電子零件用膠帶1的使用方法，即半導體晶圓6之加工方法進行說明。＜How to use＞ Next, the method of using the tape 1 for electronic parts of the present invention, that is, the method of processing the semiconductor wafer 6 will be described.

具體而言，首先，實施如圖2(A)所示，自黏著劑層4剝離電子零件用膠帶1之剝離薄膜5，如圖2(B)所示，於半導體晶圓6之電路圖案面(表面)，黏著劑層4則呈成為貼合面而貼合電子零件用膠帶1之貼合工程。此時，以50～100℃的溫度進行加熱而貼合為佳，而以60～80℃的溫度進行加熱而貼合為更佳。此時，因使用樹脂層3之奈米壓痕機，依照ISO14577而測定之60℃～80℃之任一溫度中奈米壓痕機之壓頭的押入深度為10000nm以上之故，電子零件用膠帶1係以短時間而充分順應於半導體晶圓6表面的凹凸61。貼合速度係3mm/S以上為佳。貼合時之加熱係經由保持半導體晶圓6之夾盤或貼合滾輪之加溫而實施。Specifically, first, as shown in FIG. 2(A), the peeling film 5 of the electronic component tape 1 is peeled from the adhesive layer 4, as shown in FIG. 2(B), on the circuit pattern surface of the semiconductor wafer 6 (Surface), the adhesive layer 4 is a bonding process for bonding the tape 1 for electronic parts as a bonding surface. At this time, heating at a temperature of 50 to 100°C for bonding is preferred, and heating at a temperature of 60 to 80°C for bonding is more preferred. At this time, since the resin layer 3 nano indenter is used, the penetration depth of the indenter of the nano indenter at any temperature of 60°C to 80°C measured in accordance with ISO14577 is more than 10000nm, so it is used for electronic parts The tape 1 fully conforms to the unevenness 61 on the surface of the semiconductor wafer 6 in a short time. The bonding speed is better than 3mm/S. The heating during bonding is performed by heating the chuck holding the semiconductor wafer 6 or the bonding roller.

貼合工程之後，在保持於夾盤之狀態，經由附屬於貼合機之切割刀，沿著半導體晶圓6的側面，實施切斷電子零件用膠帶1之切斷工程。為了提升切割性，亦有將切割刀加熱成70～150℃程度之情況。After the bonding process, while maintaining the state of the chuck, the cutting process of cutting the tape 1 for electronic parts is performed along the side surface of the semiconductor wafer 6 through the dicing blade attached to the bonding machine. In order to improve the cutting performance, there are cases where the cutting knife is heated to about 70-150°C.

半導體晶圓表面保護膠帶1係適合使用於形成在電路形成面之凸塊等之凹凸61面的高低差，即電路形成面的階差為10μm以上之構成，更適合使用於階差為100μm以上之構成，特別適合適用於階差為180μm以上之構成。The semiconductor wafer surface protection tape 1 is suitable for use on the bumps formed on the circuit formation surface. The height difference of the 61 surface of the bumps, that is, the structure where the step difference of the circuit formation surface is 10μm or more, is more suitable for the step difference of 100μm or more. The structure is especially suitable for the structure with a step difference of 180μm or more.

之後，如圖2(C)所示，將半導體晶圓6的背面，即無電路圖案的面側，半導體晶圓6的厚度則至成為特定的厚度，例如10～200μm，實施經由研削機7而進行研削的研削工程。之後，對於最後加工而實施乾式研磨等之研磨工程亦可。此時，電子零件用膠帶1係充分順應於半導體晶圓6表面的凹凸61之故，而可作為滲漏抑制。另外，抑制了電子零件用膠帶1之表面的凹凸之故，對於半導體晶圓6的背面係均一加上自研削機7的力，厚度精確度佳而研削•研磨半導體晶圓6，亦抑制了壓凹痕。After that, as shown in FIG. 2(C), the thickness of the semiconductor wafer 6 on the back side of the semiconductor wafer 6, that is, the side without the circuit pattern, becomes a specific thickness, for example, 10 to 200 μm, and the grinding machine 7 And the grinding process of grinding. After that, a polishing process such as dry polishing may be performed for final processing. At this time, since the tape 1 for electronic parts fully conforms to the unevenness 61 on the surface of the semiconductor wafer 6, it can be used as leakage suppression. In addition, since the unevenness of the surface of the tape 1 for electronic parts is suppressed, the force of the self-grinding machine 7 is uniformly applied to the back surface of the semiconductor wafer 6, so that the thickness accuracy is good, and the semiconductor wafer 6 is ground and polished. Indentation.

之後，電子零件用膠帶1為光聚合性之情況，係照射能量線而使黏著劑層4之黏著力下降，自半導體晶圓6剝離電子零件用膠帶1。然而，在照射能量線之後，剝離電子零件用膠帶1之前，於半導體晶圓6的無電路圖案之研削•研磨面側，貼合晶圓切割•晶片接合薄膜(未圖示)亦可。After that, when the tape 1 for electronic parts is photopolymerizable, the adhesive force of the adhesive layer 4 is reduced by irradiating energy rays, and the tape 1 for electronic parts is peeled from the semiconductor wafer 6. However, after the energy ray is irradiated and before the tape 1 for electronic parts is peeled off, a wafer dicing and wafer bonding film (not shown) may be attached to the grinding and polishing surface side of the semiconductor wafer 6 without a circuit pattern.

然而，在本實施形態中，作為呈設置黏著劑層4於樹脂層的上面，但如無必要設置黏著劑層4而亦可不設置。此情況，直接貼合半導體晶圓6於樹脂層而研削•研磨半導體晶圓6的背面，在研削•研磨結束之後，自半導體晶圓6剝離電子零件用膠帶1。However, in this embodiment, the adhesive layer 4 is provided on the upper surface of the resin layer, but the adhesive layer 4 may not be provided if it is not necessary. In this case, the semiconductor wafer 6 is directly bonded to the resin layer to grind and grind the back surface of the semiconductor wafer 6, and after the grinding and polishing are completed, the electronic component tape 1 is peeled from the semiconductor wafer 6.

然而，在本實施形態中，對於將電子零件用膠帶1使用於半導體晶圓6的研削•研磨的例，已做過說明，但並不限定於此，而可使用於具有凹凸於表面之電子零件的切割，或搬送用等之表面保護的用途者。作為電子零件係除了半導體晶圓6以外，例如，可舉出具有階差為200μm程度之凸凹於表面的玻璃，或具有高度200μm程度的凸塊的封裝等。However, in the present embodiment, the example in which the electronic component tape 1 is used for the grinding and polishing of the semiconductor wafer 6 has been described, but it is not limited to this, and can be used for electrons with uneven surfaces. For surface protection purposes such as cutting parts or conveying. As the electronic component system, in addition to the semiconductor wafer 6, for example, a glass having convex and concave surfaces with a step difference of about 200 μm, or a package having bumps with a height of about 200 μm, etc. are mentioned.

＜實施例＞ 以下，依據實施例而更詳細說明本發明，但本發明係未限定於此等實施例者。<Example> Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples.

[黏著劑層組成物的調製] [黏著劑層組成物A] 對於2-丙烯酸異辛酯80質量份，2-丙烯酸羥乙酯15質量份，甲基丙烯酸5質量份所成之共聚物100質量份而言，加上coronate-L(商品名、Nippon Polyurethane Industry股份有限公司製)1.0質量份進行混合而得到黏著劑組成物A。[Preparation of adhesive layer composition] [Adhesive layer composition A] For 100 parts by mass of a copolymer composed of 80 parts by mass of 2-isooctyl acrylate, 15 parts by mass of 2-hydroxyethyl acrylate, and 5 parts by mass of methacrylic acid, add coronate-L (trade name, Nippon Polyurethane Industry Co., Ltd.) 1.0 parts by mass were mixed to obtain an adhesive composition A.

[構成樹脂層之樹脂的準備] [樹脂B1] 作為樹脂B1，準備丙烯酸丁酯含有率為30%，重量平均分子量為100000之乙烯-丙烯酸丁酯共聚物(EBA)。在樹脂B1之70℃的儲存模數係9.0×104 Pa、MFR係30g/10min、分子量分布係5.8。[Preparation of resin constituting the resin layer] [Resin B1] As resin B1, an ethylene-butyl acrylate copolymer (EBA) having a butyl acrylate content of 30% and a weight average molecular weight of 100,000 was prepared. The storage modulus of resin B1 at 70°C is 9.0×10 4 Pa, the MFR is 30g/10min, and the molecular weight distribution is 5.8.

[樹脂B2] 作為樹脂B2，準備密度為0.88，重量平均分子量為40000之α烯烴樹脂。在樹脂B2之70℃的儲存模數係1.4×105 Pa、MFR係40g/10min、分子量分布係2.4。 [樹脂B3] 作為樹脂B3，準備乙酸乙烯含有率為30%，重量平均分子量為50000之乙烯-乙酸乙烯共聚物(EVA)。在樹脂B3之70℃的儲存模數係6.8×104 Pa、MFR係60g/10min、分子量分布係6.3。 [樹脂B4] 作為樹脂B4，準備密度為0.90，重量平均分子量為50000之α烯烴樹脂。在樹脂B4之70℃的儲存模數係2.5×105 Pa、MFR係20g/10min、分子量分布係2.4。 [樹脂B5] 作為樹脂B5，準備乙酸乙烯含有率為40%，重量平均分子量為40000之乙烯-乙酸乙烯共聚物(EVA)。在樹脂B5之70℃的儲存模數係3.6×104 Pa、MFR係70g/10min、分子量分布係6.3。[Resin B2] As resin B2, an alpha olefin resin having a density of 0.88 and a weight average molecular weight of 40,000 was prepared. The storage modulus of resin B2 at 70°C is 1.4×10 5 Pa, the MFR is 40g/10min, and the molecular weight distribution is 2.4. [Resin B3] As resin B3, an ethylene-vinyl acetate copolymer (EVA) having a vinyl acetate content of 30% and a weight average molecular weight of 50,000 was prepared. The storage modulus of resin B3 at 70°C is 6.8×10 4 Pa, MFR is 60g/10min, and molecular weight distribution is 6.3. [Resin B4] As resin B4, an alpha olefin resin having a density of 0.90 and a weight average molecular weight of 50,000 was prepared. The storage modulus of resin B4 at 70°C is 2.5×10 5 Pa, the MFR is 20g/10min, and the molecular weight distribution is 2.4. [Resin B5] As resin B5, an ethylene-vinyl acetate copolymer (EVA) having a vinyl acetate content of 40% and a weight average molecular weight of 40,000 was prepared. The storage modulus of resin B5 at 70°C is 3.6×10 4 Pa, MFR is 70g/10min, and molecular weight distribution is 6.3.

[電子零件用膠帶的製作] [實施例1] 於作為基材薄膜的厚度50μm聚乙烯對苯二甲酸酯(PET)薄膜上，以厚度300μm而押出樹脂B1，形成樹脂層，對於樹脂層側施以電暈處理。接著，於厚度40μm之聚乙烯對苯二甲酸酯(PET)之間隔件上，乾燥後之膜厚則呈成為10μm而塗佈黏著劑組成物A，再使其乾燥而得到黏著劑層。之後，將黏著劑層與上述樹脂層面貼合而進行轉印，得到有關厚度360μm之實施例1的電子零件用膠帶。[Production of tape for electronic parts] [Example 1] On a polyethylene terephthalate (PET) film with a thickness of 50 μm as a base film, resin B1 was extruded with a thickness of 300 μm to form a resin layer, and corona treatment was applied to the resin layer side. Next, the adhesive composition A was coated on a 40 μm-thick polyethylene terephthalate (PET) spacer so that the film thickness after drying became 10 μm, and then dried to obtain an adhesive layer. After that, the adhesive layer was bonded to the above-mentioned resin layer and transferred to obtain the tape for electronic parts of Example 1 with a thickness of 360 μm.

[實施例2] 於作為基材薄膜的厚度130μm之高密度聚乙烯(HD)薄膜上，以厚度300μm而押出樹脂B1，形成樹脂層，對於樹脂層側施以電暈處理。接著，於厚度40μm之聚乙烯對苯二甲酸酯(PET)之間隔件上，乾燥後之膜厚則呈成為10μm而塗佈黏著劑組成物A，再使其乾燥而得到黏著劑層。之後，將黏著劑層與上述樹脂層面貼合而進行轉印，得到有關厚度440μm之實施例2的電子零件用膠帶。[Example 2] On a high-density polyethylene (HD) film with a thickness of 130 μm as a base film, resin B1 was extruded with a thickness of 300 μm to form a resin layer, and corona treatment was applied to the resin layer side. Next, the adhesive composition A was coated on a 40 μm-thick polyethylene terephthalate (PET) spacer so that the film thickness after drying became 10 μm, and then dried to obtain an adhesive layer. After that, the adhesive layer was bonded to the above-mentioned resin layer and transferred to obtain an electronic component tape of Example 2 with a thickness of 440 μm.

[實施例3] 將樹脂B1，對於100質量份而言，加上氧化鋁充填劑20質量份進行混合，得到樹脂組成物。 於作為基材薄膜的厚度130μm之高密度聚乙烯(HD)薄膜上，以厚度300μm而押出上述樹脂層生物，形成樹脂層，對於樹脂層側施以電暈處理。接著，於厚度40μm之聚乙烯對苯二甲酸酯(PET)之間隔件上，乾燥後之膜厚則呈成為10μm而塗佈黏著劑組成物A，再使其乾燥而得到黏著劑層。之後，將黏著劑層與上述樹脂層面貼合而進行轉印，得到有關厚度440μm之實施例3的電子零件用膠帶。[Example 3] Resin B1 was mixed with 100 parts by mass of alumina filler and 20 parts by mass to obtain a resin composition. On a high-density polyethylene (HD) film with a thickness of 130 μm as a base film, the resin layer organism was extruded with a thickness of 300 μm to form a resin layer, and corona treatment was applied to the resin layer side. Next, the adhesive composition A was coated on a 40 μm-thick polyethylene terephthalate (PET) spacer so that the film thickness after drying became 10 μm, and then dried to obtain an adhesive layer. After that, the adhesive layer was bonded to the above-mentioned resin layer and transferred to obtain an electronic component tape of Example 3 with a thickness of 440 μm.

[實施例4] 於作為基材薄膜的厚度60μm之高密度聚乙烯(HD)薄膜上，以厚度300μm而押出樹脂B1，形成樹脂層，對於樹脂層側施以電暈處理。接著，於厚度40μm之聚乙烯對苯二甲酸酯(PET)之間隔件上，乾燥後之膜厚則呈成為10μm而塗佈黏著劑組成物A，再使其乾燥而得到黏著劑層。之後，將黏著劑層與上述樹脂層面貼合而進行轉印，得到有關厚度310μm之實施例4的電子零件用膠帶。[Example 4] On a high-density polyethylene (HD) film with a thickness of 60 μm as a base film, resin B1 was extruded with a thickness of 300 μm to form a resin layer, and corona treatment was applied to the resin layer side. Next, the adhesive composition A was coated on a 40 μm-thick polyethylene terephthalate (PET) spacer so that the film thickness after drying became 10 μm, and then dried to obtain an adhesive layer. After that, the adhesive layer was bonded to the above-mentioned resin layer and transferred to obtain the tape for electronic parts of Example 4 with a thickness of 310 μm.

[實施例5] 於作為基材薄膜的厚度60μm之高密度聚乙烯(HD)薄膜上，以厚度300μm而押出樹脂B2，形成樹脂層，對於樹脂層側施以電暈處理。接著，於厚度40μm之聚乙烯對苯二甲酸酯(PET)之間隔件上，乾燥後之膜厚則呈成為10μm而塗佈黏著劑組成物A，再使其乾燥而得到黏著劑層。之後，將黏著劑層與上述樹脂層面貼合而進行轉印，得到有關厚度310μm之實施例5的電子零件用膠帶。 [實施例6] 於作為基材薄膜的厚度50μm聚乙烯對苯二甲酸酯(PET)薄膜上，以厚度300μm而押出樹脂B3，形成樹脂層，對於樹脂層側施以電暈處理。接著，於厚度40μm之聚乙烯對苯二甲酸酯(PET)之間隔件上，乾燥後之膜厚則呈成為10μm而塗佈黏著劑組成物A，再使其乾燥而得到黏著劑層。之後，將黏著劑層與上述樹脂層面貼合而進行轉印，得到有關厚度360μm之實施例6的電子零件用膠帶。[Example 5] On a high-density polyethylene (HD) film with a thickness of 60 μm as a base film, resin B2 was extruded with a thickness of 300 μm to form a resin layer, and corona treatment was applied to the resin layer side. Next, the adhesive composition A was coated on a 40 μm-thick polyethylene terephthalate (PET) spacer so that the film thickness after drying became 10 μm, and then dried to obtain an adhesive layer. After that, the adhesive layer was bonded to the above-mentioned resin layer and transferred to obtain the tape for electronic parts of Example 5 with a thickness of 310 μm. [Example 6] On a polyethylene terephthalate (PET) film with a thickness of 50 μm as a base film, resin B3 was extruded with a thickness of 300 μm to form a resin layer, and corona treatment was applied to the resin layer side. Next, the adhesive composition A was coated on a 40 μm-thick polyethylene terephthalate (PET) spacer so that the film thickness after drying became 10 μm, and then dried to obtain an adhesive layer. After that, the adhesive layer was bonded to the above-mentioned resin layer and transferred to obtain an electronic component tape of Example 6 with a thickness of 360 μm.

[比較例1] 於作為基材薄膜的厚度50μm聚乙烯對苯二甲酸酯(PET)薄膜上，以厚度390μm而押出樹脂B1，形成樹脂層，對於樹脂層側施以電暈處理。接著，於厚度40μm之聚乙烯對苯二甲酸酯(PET)之間隔件上，乾燥後之膜厚則呈成為10μm而塗佈黏著劑組成物A，再使其乾燥而得到黏著劑層。之後，將黏著劑層與上述樹脂層面貼合而進行轉印，得到有關厚度450μm之比較例1的電子零件用膠帶。[Comparative Example 1] On a polyethylene terephthalate (PET) film with a thickness of 50 μm as a base film, resin B1 was extruded with a thickness of 390 μm to form a resin layer, and corona treatment was applied to the resin layer side. Next, the adhesive composition A was coated on a 40 μm-thick polyethylene terephthalate (PET) spacer so that the film thickness after drying became 10 μm, and then dried to obtain an adhesive layer. After that, the adhesive layer was bonded to the above-mentioned resin layer and transferred to obtain an electronic component tape of Comparative Example 1 having a thickness of 450 μm.

[比較例2] 於作為基材薄膜的厚度190μm之高密度聚乙烯(HD)薄膜上，以厚度300μm而押出樹脂B1，形成樹脂層，對於樹脂層側施以電暈處理。接著，於厚度40μm之聚乙烯對苯二甲酸酯(PET)之間隔件上，乾燥後之膜厚則呈成為10μm而塗佈黏著劑組成物A，再使其乾燥而得到黏著劑層。之後，將黏著劑層與上述樹脂層面貼合而進行轉印，得到有關厚度500μm之比較例2的電子零件用膠帶。[Comparative Example 2] On a high-density polyethylene (HD) film with a thickness of 190 μm as a base film, resin B1 was extruded with a thickness of 300 μm to form a resin layer, and corona treatment was applied to the resin layer side. Next, the adhesive composition A was coated on a 40 μm-thick polyethylene terephthalate (PET) spacer so that the film thickness after drying became 10 μm, and then dried to obtain an adhesive layer. After that, the adhesive layer was bonded to the above-mentioned resin layer and transferred to obtain an electronic component tape of Comparative Example 2 having a thickness of 500 μm.

[比較例3] 於作為基材薄膜的厚度50μm聚乙烯對苯二甲酸酯(PET)薄膜上，以厚度300μm而押出樹脂B4，形成樹脂層，對於樹脂層側施以電暈處理。接著，於厚度40μm之聚乙烯對苯二甲酸酯(PET)之間隔件上，乾燥後之膜厚則呈成為10μm而塗佈黏著劑組成物A，再使其乾燥而得到黏著劑層。之後，將黏著劑層與上述樹脂層面貼合而進行轉印，得到有關厚度360μm之比較例3的電子零件用膠帶。[Comparative Example 3] On a polyethylene terephthalate (PET) film with a thickness of 50 μm as a base film, resin B4 was extruded with a thickness of 300 μm to form a resin layer, and corona treatment was applied to the resin layer side. Next, the adhesive composition A was coated on a 40 μm-thick polyethylene terephthalate (PET) spacer so that the film thickness after drying became 10 μm, and then dried to obtain an adhesive layer. After that, the adhesive layer was bonded to the above-mentioned resin layer and transferred to obtain a tape for electronic parts of Comparative Example 3 with a thickness of 360 μm.

[比較例4] 於作為基材薄膜的厚度50μm聚乙烯對苯二甲酸酯(PET)薄膜上，以厚度300μm而押出樹脂B5，形成樹脂層，對於樹脂層側施以電暈處理。接著，於厚度40μm之聚乙烯對苯二甲酸酯(PET)之間隔件上，乾燥後之膜厚則呈成為10μm而塗佈黏著劑組成物A，再使其乾燥而得到黏著劑層。之後，將黏著劑層與上述樹脂層面貼合而進行轉印，得到有關厚度360μm之比較例4的電子零件用膠帶。[Comparative Example 4] On a polyethylene terephthalate (PET) film with a thickness of 50 μm as a base film, resin B5 was extruded with a thickness of 300 μm to form a resin layer, and corona treatment was applied to the resin layer side. Next, the adhesive composition A was coated on a 40 μm-thick polyethylene terephthalate (PET) spacer so that the film thickness after drying became 10 μm, and then dried to obtain an adhesive layer. After that, the adhesive layer was bonded to the above-mentioned resin layer and transferred to obtain an electronic component tape of Comparative Example 4 with a thickness of 360 μm.

[特性測定及評估試驗] 對於上述實施例及比較例之電子零件用膠帶，如以下進行特性測定及評估試驗。將其結果示於表1。[Characteristic measurement and evaluation test] For the tapes for electronic parts of the above-mentioned Examples and Comparative Examples, characteristic measurement and evaluation tests were performed as follows. The results are shown in Table 1.

(1)奈米壓痕機的壓頭之押入深度的測定 對於有關實施例及比較例之樹脂層，依照ISO14577‐1:2002而製作試料片。試料片之蒲松比係0.25。使用KLA CORPORATION製之Nano Indenter G200(商品名)，測定在各試料片之70℃的奈米壓痕機的壓頭之押入深度。對於壓頭係使用直徑1mm之平坦圓柱壓頭，最大負載50mN、以至最大負載施加為止之時間1秒，最大負載保持時間0.5秒的條件進行測定。將其結果示於表1及表2。(1) Measurement of the penetration depth of the indenter of the nano indenter Regarding the resin layers of the relevant examples and comparative examples, sample pieces were produced in accordance with ISO14577-1:2002. The Posson ratio of the specimen is 0.25. Using Nano Indenter G200 (trade name) manufactured by KLA CORPORATION, the penetration depth of the indenter of the nano indenter at 70°C of each sample piece was measured. For the indenter system, a flat cylindrical indenter with a diameter of 1 mm was used, the maximum load was 50 mN, the time until the maximum load was applied 1 second, and the maximum load holding time was 0.5 seconds. The results are shown in Table 1 and Table 2.

(2)基材薄膜之熱傳導率的測定 對於有關實施例及比較例之基材薄膜，依照JIS-R1611而使用LINSESIS公司製之XFA500(商品名)，將在70℃之熱傳導率，以充電電壓350V、脈衝長度5mS之條件進行測定。將其結果示於表1及表2。(2) Measurement of thermal conductivity of substrate film For the substrate films of the relevant examples and comparative examples, XFA500 (trade name) manufactured by LINSESIS was used in accordance with JIS-R1611, and the thermal conductivity at 70°C was measured under the conditions of a charging voltage of 350V and a pulse length of 5mS. The results are shown in Table 1 and Table 2.

(3)樹脂層之熱傳導率的測定 對於有關實施例及比較例之樹脂層，依照JIS-R1611而使用LINSESIS公司製之XFA500(商品名)，將在70℃之熱傳導率。將其結果示於表1及表2。(3) Measurement of thermal conductivity of resin layer For the resin layers of the relevant examples and comparative examples, XFA500 (trade name) manufactured by LINSESIS was used in accordance with JIS-R1611, and the thermal conductivity was at 70°C. The results are shown in Table 1 and Table 2.

(4)貼合速度的評估 作為貼附機而使用LINTEC股份有限公司製之RAD3510F/8(商品名)，以貼合溫度70℃而貼合有關實施例及比較例之電子零件用膠帶於半導體晶圓。作為半導體晶圓係使用:於表面具有高度200μm、間距400μm的凸塊，寬度100μm之劃線，晶片尺寸為5mm角之8英吋口徑之半導體晶圓。以線速2m/min、3m/min、及5m/min進行貼合，再由以下的方法而確認順應性良好與否。在電子零件用膠帶貼合後的狀態，使用測微計，自電子零件用膠帶側測定厚度。將半導體晶圓中心部的厚度作為αμm、將未有凸塊的半導體晶圓端部之厚度作為βμm時，將α-β≦60μm判定為順應性良好。將在所有的線速為順應性良好的構成作為良品而評估為○，而將在線速5m/min中，雖並非順應性良好，但在線速3m/min及2m/min時為順應性良好之構成，作為容許品而評估為△，將僅在線速2m/min時為順應性良好之構成，作為不良品而評估為×、將在線速2m/min時並非順應性良好之構成，作為不良品而評估為××。(4) Evaluation of fitting speed As a bonding machine, RAD3510F/8 (trade name) manufactured by LINTEC Co., Ltd. was used, and the tapes for electronic parts of the relevant examples and comparative examples were bonded to the semiconductor wafer at a bonding temperature of 70°C. Used as a semiconductor wafer: a semiconductor wafer with bumps with a height of 200μm and a pitch of 400μm on the surface, a scribe line with a width of 100μm, and a chip size of 8 inches with a 5mm corner. Laminate at line speeds of 2m/min, 3m/min, and 5m/min, and then confirm whether the compliance is good or not by the following method. In the state after the electronic component tape is attached, the thickness is measured from the side of the electronic component tape using a micrometer. When the thickness of the center portion of the semiconductor wafer is αμm and the thickness of the end portion of the semiconductor wafer without bumps is βμm, α-β≦60μm is judged as good compliance. All components with good compliance at the line speed are evaluated as good products, and the line speed 5m/min is not good for compliance, but at the line speed 3m/min and 2m/min, the compliance is good. The structure is evaluated as △ as an allowable product, a structure with good compliance only at a line speed of 2m/min is evaluated as a defective product, and a structure not having good compliance at a line speed of 2m/min is evaluated as a defective product And the evaluation is ××.

(5)環境安定性的評估 將有關捲成滾軸狀之實施例及比較例的電子零件用膠帶，在60℃或70℃之環境下放置24小時之後，經由目視，確認對於滾軸端面有無露出有樹脂。將在70℃未確認到有露出樹脂之構成作為最佳品而評估為◎，將在60℃未確認到有露出樹脂之構成作為良品而評估為○，將確認到有露出樹脂之構成作為不良品而評估為×。將其結果示於表1及表2。(5) Assessment of environmental stability After leaving the tapes for electronic parts of the Examples and Comparative Examples rolled into a roller shape for 24 hours in an environment of 60°C or 70°C, it was confirmed visually whether or not resin was exposed to the end surface of the roller. The composition with no exposed resin at 70°C was evaluated as the best product, the composition with no exposed resin at 60°C was evaluated as good, and the composition with exposed resin was evaluated as bad. It is evaluated as ×. The results are shown in Table 1 and Table 2.

Figure 02_image001
Figure 02_image001

Figure 02_image003
Figure 02_image003

如表1所示，實施例1～6係使用奈米壓痕機，依照ISO14577而測定之70℃之壓頭的押入深度為15000nm～50000nm，而樹脂層之厚度為240μm～300μm，總厚度440μm以下之故，在貼合速度及環境安定性的評估中成為良好的結果。特別是實施例3係在樹脂層之70℃的熱傳導率為0.7W/m･K，較其他的實施例為高之故，而在貼合速度的評估中成為優良的結果。另外，實施例4，5係電子零件用膠帶的總厚度為310μm，較其他的實施例為薄之故，而在貼合速度的評估中成為優良的結果。實施例6係在環境安定性中，雖對於實施例1～5係為差，但在使用奈米壓痕機所測定之70℃的押入深度為大的50000nm之故，而在貼合速度的評估中成為優良的結果。As shown in Table 1, Examples 1 to 6 use a nano indenter, and the penetration depth of the indenter at 70°C measured in accordance with ISO14577 is 15000nm～50,000nm, and the thickness of the resin layer is 240μm～300μm, and the total thickness is 440μm For the following reasons, it is a good result in the evaluation of the bonding speed and environmental stability. In particular, Example 3 has a thermal conductivity of 0.7 W/m･K at 70°C of the resin layer, which is higher than that of the other Examples, and it is an excellent result in the evaluation of the bonding speed. In addition, the total thickness of the tapes for electronic parts in Examples 4 and 5 was 310 μm, which was thinner than the other examples, and it was an excellent result in the evaluation of the bonding speed. Example 6 is in terms of environmental stability. Although it is inferior to Examples 1 to 5, the penetration depth at 70°C measured using a nanoindenter is as large as 50000 nm. It becomes an excellent result in the evaluation.

另一方面，如表2所示，比較例1係樹脂層之厚度則超過300μm，而比較例2係總厚度超過450μm之故，在貼合速度的評估中成為不佳的結果。比較例3係使用奈米壓痕機，在依據ISO14577所測定之70℃的壓頭之押入深度為不足10000nm之故，在貼合速度的評估中成為不佳的結果。比較例4係使用奈米壓痕機，在依據ISO14577所測定之70℃的壓頭之押入深度為超過50000nm之故，在環境安定性的評估中成為不佳的結果。On the other hand, as shown in Table 2, the thickness of the resin layer of Comparative Example 1 exceeded 300 μm, and the total thickness of Comparative Example 2 exceeded 450 μm, which was a poor result in the evaluation of the bonding speed. In Comparative Example 3, a nano indenter was used, and the penetration depth of the indenter at 70°C measured in accordance with ISO14577 was less than 10,000 nm, which was a poor result in the evaluation of the bonding speed. In Comparative Example 4, a nano indenter was used, and the penetration depth of the indenter at 70°C measured in accordance with ISO14577 was more than 50,000 nm, which was a poor result in the evaluation of environmental stability.

1:電子零件用膠帶 2:基材薄膜 3:樹脂層 4:黏著劑層 5:剝離薄膜 6:半導體晶圓 61:凹凸 7:研削機1: Tape for electronic parts 2: Substrate film 3: Resin layer 4: Adhesive layer 5: Peel the film 6: Semiconductor wafer 61: bump 7: Grinding machine

[圖1]係模式性地顯示有關本發明之實施形態的電子零件用膠帶之構造的剖面圖。 [圖2]係為了說明有關本發明之實施形態的電子零件用膠帶之使用例的說明圖。Fig. 1 is a cross-sectional view schematically showing the structure of an electronic component tape according to an embodiment of the present invention. Fig. 2 is an explanatory diagram for explaining an example of use of the tape for electronic parts according to the embodiment of the present invention.

1:電子零件用膠帶 1: Tape for electronic parts

2:基材薄膜 2: Substrate film

3:樹脂層 3: Resin layer

4:黏著劑層 4: Adhesive layer

5:剝離薄膜 5: Peel the film

Claims (6)

一種電子零件用膠帶，其中具有至少一層的樹脂層， 前述樹脂層係使用奈米壓痕機，依照ISO14577所測定之在60℃～80℃任一溫度之前述奈米壓痕機的壓頭之押入深度為10000nm～50000nm， 前述樹脂層之厚度為50μm～300μm，總厚度為450μm以下。An adhesive tape for electronic parts, which has at least one resin layer, The resin layer uses a nano indenter, and the penetration depth of the indenter of the nano indenter at any temperature of 60°C to 80°C measured in accordance with ISO14577 is 10000nm to 50000nm. The thickness of the aforementioned resin layer is 50 μm to 300 μm, and the total thickness is 450 μm or less. 如請求項1之電子零件用膠帶，其中前述樹脂層係在60～80℃之熱傳導率至少為0.30W/m･K以上。The adhesive tape for electronic parts of claim 1, wherein the thermal conductivity of the resin layer at 60 to 80°C is at least 0.30W/m･K or more. 如請求項1或請求項2之電子零件用膠帶，其中貼合於設置有10μm以上之階差的半導體晶圓之電路形成面。Such as claim 1 or claim 2, the tape for electronic parts, which is attached to the circuit formation surface of a semiconductor wafer provided with a step difference of 10 μm or more. 如請求項3之電子零件用膠帶，其中前述樹脂層之厚度為前述階差之1倍以上2倍以下。The adhesive tape for electronic parts of claim 3, wherein the thickness of the resin layer is 1 time or more and 2 times or less of the aforementioned step difference. 一種電子零件之加工方法，其中具有:於設置有10μm以上之階差的半導體晶圓之電路形成面，在50～100℃的溫度貼合請求項1至請求項3任一記載之電子零件用膠帶的貼合工程， 和在前述貼合工程之後，研削前述半導體晶圓的與電路形成面相反側的面之研削工程者。A method for processing electronic parts, including: on the circuit formation surface of a semiconductor wafer with a step difference of 10 μm or more, bonding the electronic parts described in any one of Claims 1 to 3 at a temperature of 50 to 100°C Adhesive tape project, And a grinding engineer who grinds the surface of the semiconductor wafer on the opposite side of the circuit formation surface after the bonding process. 如請求項5之電子零件之加工方法，其中在前述貼合工程之貼合速度為3mm/S以上。Such as the processing method of electronic parts in claim 5, wherein the bonding speed in the aforementioned bonding process is 3mm/S or more.
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