TW201804531A - 半導體裝置的製造方法 - Google Patents
半導體裝置的製造方法 Download PDFInfo
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- TW201804531A TW201804531A TW106124844A TW106124844A TW201804531A TW 201804531 A TW201804531 A TW 201804531A TW 106124844 A TW106124844 A TW 106124844A TW 106124844 A TW106124844 A TW 106124844A TW 201804531 A TW201804531 A TW 201804531A
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- MLICVSDCCDDWMD-KVVVOXFISA-M potassium;(z)-octadec-9-enoate Chemical compound [K+].CCCCCCCC\C=C/CCCCCCCC([O-])=O MLICVSDCCDDWMD-KVVVOXFISA-M 0.000 description 1
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- ZIWRUEGECALFST-UHFFFAOYSA-M sodium 4-(4-dodecoxysulfonylphenoxy)benzenesulfonate Chemical compound [Na+].CCCCCCCCCCCCOS(=O)(=O)c1ccc(Oc2ccc(cc2)S([O-])(=O)=O)cc1 ZIWRUEGECALFST-UHFFFAOYSA-M 0.000 description 1
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- HIEHAIZHJZLEPQ-UHFFFAOYSA-M sodium;naphthalene-1-sulfonate Chemical compound [Na+].C1=CC=C2C(S(=O)(=O)[O-])=CC=CC2=C1 HIEHAIZHJZLEPQ-UHFFFAOYSA-M 0.000 description 1
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- HVLUSYMLLVVXGI-USGGBSEESA-M trimethyl-[(z)-octadec-9-enyl]azanium;chloride Chemical compound [Cl-].CCCCCCCC\C=C/CCCCCCCC[N+](C)(C)C HVLUSYMLLVVXGI-USGGBSEESA-M 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/08—Homopolymers or copolymers of acrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J199/00—Adhesives based on natural macromolecular compounds or on derivatives thereof, not provided for in groups C09J101/00 -C09J107/00 or C09J189/00 - C09J197/00
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
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Abstract
本發明的半導體裝置的製造方法至少包括以下的3個步驟。(A)準備包括具有電路形成面的半導體晶圓、貼合於所述半導體晶圓的所述電路形成面側的黏著性膜(100)的結構體的步驟。(B)對所述半導體晶圓的與所述電路形成面側為相反側的面進行背面研磨的步驟。(C)對黏著性膜(100)照射紫外線後從所述半導體晶圓上去除黏著性膜(100)的步驟。而且,作為黏著性膜(100),使用如下的黏著性膜,其依序包括基材層(10)、抗靜電層(30)、以及包含導電性添加劑的黏著性樹脂層(40),且黏著性樹脂層(40)以成為所述半導體晶圓的所述電路形成面側的方式使用。
Description
本發明是有關於一種半導體裝置的製造方法。
半導體裝置的製造步驟中,於對半導體晶圓進行研削的步驟中,為了防止半導體晶圓的損傷,而於半導體晶圓上貼附黏著性膜。 此種黏著性膜中,通常使用在基材膜上積層有紫外線硬化型的黏著性樹脂層的膜。該黏著性膜藉由照射紫外線,黏著性樹脂層進行交聯而黏著性樹脂層的黏著力下降,因此可容易地從半導體晶圓上剝離黏著性膜。
另一方面,使用此種黏著性膜的半導體裝置的製造步驟中,存在當從半導體晶圓上剝離黏著性膜時產生被稱為剝離帶電的靜電的情況。藉由以所述方式產生的靜電,存在形成於半導體晶圓上的電路被破壞(靜電擊穿),或於形成於半導體晶圓上的電路上附著有灰塵等異物的情況。 特別是隨著近年來的半導體晶圓的高密度化·配線的窄間距化,半導體晶圓存在比以前更容易受到由靜電帶來的影響的傾向。 鑒於所述情況,近年來,對於在半導體裝置的製造步驟中為了防止半導體晶圓的損傷而使用的黏著性膜,亦要求進一步提高抗靜電性能。
與此種半導體晶圓加工用黏著性膜相關的技術例如可列舉專利文獻1(日本專利特開2011-210944號公報)中記載者。
專利文獻1中記載有如下的抗靜電性半導體加工用黏著膠帶,其為包括基材膜及光硬化型黏著劑層的黏著膠帶,其特徵在於:於所述基材膜的至少單面具有含有導電性高分子的抗靜電層,且於所述抗靜電層上具有在基礎聚合物的分子內含有光硬化性不飽和碳鍵的黏著劑層,紫外線硬化前後的所述黏著劑層側的表面電阻率為1×106
Ω/□~5×1012
Ω/□,黏著劑層的厚度為20 μm~250 μm,將黏著膠帶貼合於矽鏡面晶圓(silicon mirror wafer)上的情況下,黏著劑層的紫外線硬化後的90度剝離黏著力(依據JIS Z 0237;剝離速度為50 mm/min)為0.15 N/25 mm~0.25 N/25 mm。 [現有技術文獻] [專利文獻]
[專利文獻1]日本專利特開2011-210944號公報
[發明所欲解決之課題] 如所述背景技術的項中所述,近年來,關於半導體晶圓加工用黏著性膜的靜電對策的觀點,所要求的技術水準逐漸提高。 根據本發明者等人的研究而明確,如專利文獻1中所記載的依序積層有基材膜與抗靜電層及黏著劑層的黏著性膜中,抗靜電性並未充分滿足。 更具體而言,明確如專利文獻1中所記載的黏著性膜中,於紫外線硬化後黏著劑層的飽和區域電壓大幅增加,抗靜電性大幅度地惡化。
本發明是鑒於所述情況而形成,提供一種半導體裝置的製造方法,其可穩定地進行半導體晶圓的研削並且可抑制電路的絕緣破壞,可穩定地獲得品質優異的半導體裝置。 [解決課題之手段]
本發明者等人為了達成所述課題而反覆進行了努力研究。其結果為,發現藉由將黏著性膜的層構成設為依序包括基材層、抗靜電層、以及包含導電性添加劑的黏著性樹脂層的層構成,可抑制紫外線硬化後的黏著性膜的飽和區域電壓的上昇,從而完成了本發明。
根據本發明,提供以下所示的半導體裝置的製造方法。
[1] 一種半導體裝置的製造方法,其至少包括: 步驟(A),準備包括具有電路形成面的半導體晶圓、貼合於所述半導體晶圓的所述電路形成面側的黏著性膜的結構體; 步驟(B),對所述半導體晶圓的與所述電路形成面側為相反側的面進行背面研磨;以及 步驟(C),對所述黏著性膜照射紫外線後從所述半導體晶圓上去除所述黏著性膜, 作為所述黏著性膜,使用如下的黏著性膜: 其依序包括基材層、抗靜電層、以及包含導電性添加劑的黏著性樹脂層,且所述黏著性樹脂層以成為所述半導體晶圓的所述電路形成面側的方式使用。 [2] 如所述[1]所述的半導體裝置的製造方法,其中 於所述半導體晶圓的所述電路形成面上形成有凸塊電極。 [3] 如所述[1]或[2]所述的半導體裝置的製造方法,其中 所述黏著性樹脂層包含紫外線硬化型黏著性樹脂。 [4] 如所述[3]所述的半導體裝置的製造方法,其中 相對於所述紫外線硬化型黏著性樹脂100質量份,所述黏著性樹脂層中的所述導電性添加劑的含量為0.01質量份以上、10質量份以下。 [5] 如所述[1]至[4]中任一項所述的半導體裝置的製造方法,其中 所述導電性添加劑包含選自陽離子性界面活性劑、陰離子性界面活性劑、非離子性界面活性劑、兩性界面活性劑、及離子液體中的一種或兩種以上。 [6] 如所述[1]至[5]中任一項所述的半導體裝置的製造方法,其中 所述黏著性樹脂層的厚度為5 μm以上、550 μm以下。 [7] 如所述[1]至[6]中任一項所述的半導體裝置的製造方法,其中 所述抗靜電層包含導電性高分子。 [8] 如所述[1]至[7]中任一項所述的半導體裝置的製造方法,其中 於所述基材層與所述抗靜電層之間更包括凹凸吸收性樹脂層。 [9] 如所述[1]至[8]中任一項所述的半導體裝置的製造方法,其中 所述步驟(C)中,藉由對所述黏著性膜照射300 mJ/cm2
以上的線量的紫外線,而使所述黏著性樹脂層進行光硬化,使所述黏著性樹脂層的黏著力下降後,從所述半導體晶圓上去除所述黏著性膜。 [10] 如所述[1]至[9]中任一項所述的半導體裝置的製造方法,其中 利用下述方法來測定的紫外線硬化後的所述黏著性樹脂層表面的飽和區域電壓V1
為1.0 kV以下, (方法) 對於所述黏著性樹脂層,於25℃的環境下使用高壓水銀燈,以照射強度100 mW/cm2
,照射紫外線量1080 mJ/cm2
的主波長365 nm的紫外線,使所述黏著性樹脂層進行光硬化;繼而,於施加電壓為10 kV、試樣與電極的距離為20 mm、25℃、50%RH的條件下,對所述黏著性樹脂層的表面進行30秒的電壓施加,依據JIS L1094來算出所述黏著性樹脂層的表面的飽和區域電壓(V1
)。 [11] 如所述[1]至[10]中任一項所述的半導體裝置的製造方法,其中 利用下述方法來測定的紫外線硬化後的所述黏著性樹脂層的表面的黏力為0.1 N/cm2
以下, (方法) 將所述黏著性膜的所述黏著性樹脂層貼合於聚醯亞胺膜,於25℃的環境下使用高壓水銀燈,自所述黏著性膜的所述基材層側以照射強度100 mW/cm2
,照射紫外線量1080 mJ/cm2
的主波長365 nm的紫外線,使所述黏著性樹脂層進行光硬化;繼而,自所述黏著性膜剝離所述聚醯亞胺膜,使用探針黏性試驗機作為測定裝置,利用以下方法測定所述黏著性樹脂層的表面的黏力:使直徑為5 mm的探針與所述黏著性樹脂層的表面以10 mm/sec的速度接觸,以0.98 N/cm2
的接觸負荷來接觸10秒鐘後,以10 mm/sec的速度將所述探針於垂直方向上從所述黏著性樹脂層的表面剝離。 [發明的效果]
根據本發明,可提供一種半導體裝置的製造方法,其可穩定地進行半導體晶圓的研削並且可抑制電路的絕緣破壞,可穩定地獲得品質優異的半導體裝置。
以下,對於本發明的實施形態,使用圖式進行說明。此外,於所有圖式中,對同樣的構成要素標註共通的符號,且適宜地省略說明。另外,圖為概略圖,與實際的尺寸比率不一致。此外,數值範圍的「A~B」若無特別說明,則表示A以上、B以下。另外,本實施形態中,所謂「(甲基)丙烯酸」是指丙烯酸、甲基丙烯酸或者丙烯酸及甲基丙烯酸的兩者。
圖1及圖2是示意性地表示本發明的實施形態的黏著性膜100的結構的一例的剖面圖。 本實施形態的半導體裝置的製造方法至少包括以下的3個步驟。 (A)準備包括具有電路形成面的半導體晶圓、貼合於所述半導體晶圓的所述電路形成面側的黏著性膜100的結構體的步驟。 (B)對所述半導體晶圓的與所述電路形成面側為相反側的面進行背面研磨的步驟。 (C)對黏著性膜100照射紫外線後從所述半導體晶圓上去除黏著性膜100的步驟。 而且,作為黏著性膜100,使用如下的黏著性膜:其依序包括基材層10、抗靜電層30、以及包含導電性添加劑的黏著性樹脂層40,且黏著性樹脂層40以成為所述半導體晶圓的所述電路形成面側的方式使用。
1.黏著性膜 首先,對本實施形態的半導體裝置的製造方法中使用的黏著性膜100進行說明。
如上所述,近年來,關於半導體晶圓加工用黏著性膜的靜電對策的觀點,所要求的技術水準逐漸提高。特別是於使用在配置有高密度電路的半導體晶圓的高密度電路上形成有焊料凸塊或銅柱凸塊等凸塊電極的半導體晶圓的情況下,由於靜電的原因而存在形成於半導體晶圓上的包含凸塊電極的電路的破壞(短路)容易產生的傾向,因此此種要求變得更顯著。 因此,要求實現抗靜電性更優異的半導體晶圓加工用黏著性膜。
此處,依據本發明者等人的研究而明確,如專利文獻1中所記載的依序積層有基材膜與抗靜電層及黏著劑層的黏著性膜中,抗靜電性並未充分滿足。 更具體而言,明確如專利文獻1中所記載的黏著性膜中,於紫外線硬化後黏著劑層的飽和區域電壓大幅增加,抗靜電性大幅度地惡化。
本發明者等人為了達成所述課題而反覆進行了努力研究。其結果為,首次發現藉由將黏著性膜的層構成設為依序包括基材層、抗靜電層、以及包含導電性添加劑的黏著性樹脂層的層構成,可抑制紫外線硬化後的黏著性膜的飽和區域電壓的上昇。 即,本實施形態的黏著性膜100藉由設為所述層構成,紫外線硬化後的抗靜電性優異,可抑制從半導體晶圓上剝離時所產生的靜電的量,可穩定地獲得品質優異的半導體零件。
本實施形態的黏著性膜100中,利用下述方法來測定的紫外線硬化後的黏著性樹脂層40的飽和區域電壓V1
較佳為1.0 kV以下,更佳為0.5 kV以下。 (方法) 對於黏著性樹脂層40,於25℃的環境下使用高壓水銀燈,以照射強度100 mW/cm2
,照射紫外線量1080 mJ/cm2
的主波長365 nm的紫外線,使黏著性樹脂層40進行光硬化。繼而,於施加電壓為10 kV、試樣與電極的距離為20 mm、25℃、50%RH的條件下,對黏著性樹脂層40的表面進行30秒的電壓施加,依據JIS L1094來算出黏著性樹脂層40的表面的飽和區域電壓(V1
)。
藉由將紫外線硬化後的黏著性樹脂層40的飽和區域電壓V1
設為所述上限值以下,可使對半導體晶圓表面的抗靜電性更進一步地良好。 紫外線硬化後的黏著性樹脂層40的飽和區域電壓V1
的下限值例如為0.01 kV以上,較佳為0 kV。
本實施形態中,例如藉由適當調節構成黏著性樹脂層40的各成分的種類或調配比例、黏著性樹脂層40的厚度等,可將紫外線硬化後的黏著性樹脂層40的飽和區域電壓V1
控制於所述上限值以下。 該些中,例如黏著性樹脂層40中的導電性添加劑的有無、或黏著性樹脂層40的厚度等可作為用以將紫外線硬化後的黏著性樹脂層40的飽和區域電壓V1
設為所需的數值範圍的要素來列舉。 例如,若增加黏著性樹脂層40中的導電性添加劑的含量,或使黏著性樹脂層40的厚度變薄,則可使飽和區域電壓V1
下降。
本實施形態的黏著性膜100中,當將利用下述方法來測定的紫外線硬化後的黏著性樹脂層40的表面的飽和區域電壓設為V2
時,V1
/V2
較佳為5.0以下,更佳為3.0以下,尤佳為2.5以下。若V1
/V2
為所述上限值以下,則可更穩定地抑制從半導體晶圓上剝離時所產生的靜電的量,可更穩定地獲得品質優異的半導體零件。 (方法) 對於黏著性樹脂層40,於25℃的環境下使用高壓水銀燈,以照射強度100 mW/cm2
,照射紫外線量200 mJ/cm2
的主波長365 nm的紫外線,使黏著性樹脂層40進行光硬化。繼而,於施加電壓為10 kV、試樣與電極的距離為20 mm、25℃、50%RH的條件下,對黏著性樹脂層40的表面進行30秒的電壓施加,依據JIS L1094來算出黏著性樹脂層40的表面的飽和區域電壓(V2
)。
本實施形態的黏著性膜100中,紫外線硬化後的黏著性樹脂層40的飽和區域電壓V1
的半衰期較佳為20秒以下,更佳為10秒以下,尤佳為5秒以下,特佳為1秒以下。 此處,所謂飽和區域電壓V1
的半衰期,是指於飽和區域電壓V1
的測定中,使對黏著性樹脂層40的表面的電壓施加結束後,直至區域電壓的值下降至一半為止的時間。 本實施形態的黏著性膜100由於紫外線硬化後的黏著性樹脂層40的飽和區域電壓V1
為所述上限值以下,故可實現此種短的半衰期,可形成抗靜電性優異的黏著性膜100。
本實施形態的黏著性膜100中,利用下述方法來測定的紫外線硬化後的黏著性樹脂層40的表面的黏力較佳為0.1 N/cm2
以下,更佳為0.05 N/cm2
以下,尤佳為0.01 N/cm2
以下。 藉由紫外線硬化後的黏著性樹脂層40的表面的黏力為所述上限值以下,則更容易地從半導體晶圓表面剝離黏著性膜100,可更進一步地抑制於半導體晶圓表面殘留黏著性樹脂層40的一部分、或由於黏著性膜100的剝離而於半導體晶圓上產生不良情況等。 (方法) 將黏著性膜100的黏著性樹脂層40貼合於聚醯亞胺膜(例如,製品名:卡普頓(Kapton)200H,東麗杜邦(Toray Dupont)公司製造),於25℃的環境下使用高壓水銀燈,自黏著性膜100的基材層10側以照射強度100 mW/cm2
,照射紫外線量1080 mJ/cm2
的主波長365 nm的紫外線,使黏著性樹脂層40進行光硬化。繼而,自黏著性膜100剝離聚醯亞胺膜,使用探針黏性試驗機(例如「測試機器(TESTING MACHINES Inc.)公司製造的探針黏性試驗機:模式80-02-01」)作為測定裝置,利用如下方法來測定黏著性樹脂層40的表面的黏力:使直徑為5 mm的探針與黏著性樹脂層40的表面以10 mm/sec的速度接觸,以0.98 N/cm2
的接觸負荷來接觸10秒鐘後,以10 mm/sec的速度將所述探針於垂直方向上從黏著性樹脂層40的表面上剝離。
就機械特性與操作性的平衡而言,本實施形態的黏著性膜100整體的厚度較佳為25 μm以上、1000 μm以下,更佳為50 μm以上、600 μm以下。
本實施形態的黏著性膜100於半導體裝置的製造步驟中,用於保護半導體晶圓的電路形成面,更具體而言,於作為半導體裝置的製造步驟之一的背面研磨步驟中,用作為了保護半導體晶圓的電路形成面(即包含電路圖案的電路面)而使用的背面研磨膠帶。 此處,於貼附的對象的半導體晶圓為於表面實施包含凸塊電極的微細配線的電路的半導體晶圓的情況下,由於從半導體晶圓上剝離黏著性膜時所產生的靜電的原因,容易產生形成於半導體晶圓上的電路被破壞的靜電擊穿等,但藉由使用本實施形態的黏著性膜100,對於在此種表面形成有凸塊電極的半導體晶圓亦可更確實地抑制靜電擊穿等。
可應用本實施形態的黏著性膜100的半導體晶圓並無特別限定,可列舉矽晶圓等。
其次,對構成本實施形態的黏著性膜100的各層進行說明。
(基材層) 基材層10是以使黏著性膜100的操作性或機械特性、耐熱性等特性更良好為目的而設置的層。 基材層10若具有可耐受對半導體晶圓進行加工時所施加的外力的機械強度,則並無特別限定,例如可列舉樹脂膜。 構成所述樹脂膜的樹脂可使用公知的熱塑性樹脂。例如可列舉選自以下化合物中的一種或兩種以上:聚乙烯、聚丙烯、聚(4-甲基-1-戊烯)、聚(1-丁烯)等聚烯烴;聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯等聚酯;尼龍-6、尼龍-66、聚己二醯間苯二甲胺等聚醯胺;聚丙烯酸酯;聚甲基丙烯酸酯;聚氯乙烯;聚醚醯亞胺;乙烯·乙酸乙烯酯共聚物;聚丙烯腈;聚碳酸酯;聚苯乙烯;離子聚合物;聚碸;聚醚碸;聚苯醚等。 該些中,就半導體晶圓保護的觀點而言,較佳為選自聚丙烯、聚對苯二甲酸乙二酯、聚醯胺、乙烯·乙酸乙烯酯共聚物中的一種或兩種以上,更佳為選自聚對苯二甲酸乙二酯、乙烯·乙酸乙烯酯共聚物中的一種或兩種以上。
基材層10可為單層,亦可為兩種以上的層。 另外,為了形成基材層10而使用的樹脂膜的形態可為延伸膜,亦可為於單軸方向或雙軸方向上延伸的膜,但就提高基材層10的機械強度的觀點而言,較佳為於單軸方向或雙軸方向上延伸的膜。
就獲得良好的膜特性的觀點而言,基材層10的厚度較佳為10 μm以上、500 μm以下,更佳為20 μm以上、300 μm以下,尤佳為25 μm以上、150 μm以下。 基材層10為了改良與其他層的黏接性,亦可進行表面處理。具體而言,亦可進行電暈處理、電漿處理、下塗(under coat)處理、底塗(primer coat)處理等。
(黏著性樹脂層) 本實施形態的黏著性膜100包括黏著性樹脂層40。 黏著性樹脂層40是當將黏著性膜100貼附於半導體晶圓上時,與半導體晶圓的表面接觸而黏著的層。
黏著性樹脂層40較佳為由包含紫外線硬化型黏著性樹脂的紫外線硬化型黏著劑所形成的層。 紫外線硬化型黏著劑例如可列舉:(甲基)丙烯酸系黏著劑、矽酮系黏著劑、胺基甲酸酯系黏著劑等。 (甲基)丙烯酸系黏著劑包含作為紫外線硬化型黏著性樹脂的(甲基)丙烯酸系黏著性樹脂來作為必需成分。矽酮系黏著劑包含作為紫外線硬化型黏著性樹脂的矽酮系黏著性樹脂來作為必需成分。胺基甲酸酯系黏著劑包含作為紫外線硬化型黏著性樹脂的胺基甲酸酯系黏著性樹脂來作為必需成分。 該些中,就使黏著力的調整容易的觀點等而言,較佳為(甲基)丙烯酸系黏著劑。
(甲基)丙烯酸系黏著劑可例示如下的黏著劑,其包含分子中具有聚合性碳-碳雙鍵的(甲基)丙烯酸系黏著性樹脂、分子內具有兩個以上的聚合性碳-碳雙鍵的低分子量化合物、及光起始劑,且所述黏著劑視需要藉由交聯劑而使所述(甲基)丙烯酸系黏著性樹脂進行交聯而獲得。
分子中具有聚合性碳-碳雙鍵的(甲基)丙烯酸系黏著性樹脂具體而言是以如下方式獲得。首先,使具有乙烯性雙鍵的單體與具有官能基(P)的共聚合性單體進行共聚合。繼而,使該共聚物中所含的官能基(P)和具有可與該官能基(P)產生加成反應、縮合反應等的官能基(Q)的單體,以殘留該單體中的雙鍵的狀態進行反應,於共聚物分子中導入聚合性碳-碳雙鍵。
作為所述具有乙烯性雙鍵的單體,例如從(甲基)丙烯酸甲酯、(甲基)丙烯酸-2-乙基己酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸乙酯等丙烯酸烷基酯及甲基丙烯酸烷基酯單體、乙酸乙烯酯之類的乙烯酯、(甲基)丙烯腈、(甲基)丙烯醯胺、苯乙烯等具有乙烯性雙鍵的單體中,使用一種或兩種以上。
所述具有官能基(P)的共聚合性單體可列舉:(甲基)丙烯酸、順丁烯二酸、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸縮水甘油酯、N-羥甲基(甲基)丙烯醯胺、(甲基)丙烯醯氧基乙基異氰酸酯等。該些可為一種,亦可將兩種以上組合使用。所述具有乙烯性雙鍵的單體與具有官能基(P)的共聚合性單體的比例較佳為相對於前者70質量%~99質量%,後者為30質量%~1質量%。尤佳為相對於前者80質量%~95質量%,後者為20質量%~5質量%。 所述具有官能基(Q)的單體例如可列舉與所述具有官能基(P)的共聚合性單體相同的單體。
具有乙烯性雙鍵的單體與具有官能基(P)的共聚合性單體的共聚物中,導入聚合性碳-碳雙鍵時進行反應的官能基(P)與官能基(Q)的組合理想為羧基與環氧基、羧基與氮丙啶基、羥基與異氰酸酯基等容易產生加成反應的組合。另外,並不限於加成反應,若為羧酸基與羥基的縮合反應等可容易導入聚合性碳-碳雙鍵的反應,則可使用任意的反應。
分子中具有兩個以上的聚合性碳-碳雙鍵的低分子量化合物可列舉:三丙二醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯等。該些可使用一種或兩種以上。相對於所述(甲基)丙烯酸系黏著性樹脂100質量份,分子中具有兩個以上的聚合性碳-碳雙鍵的低分子量化合物的添加量較佳為0.1質量份~20質量份,更佳為5質量份~18質量份。
光起始劑可列舉:安息香、異丙基安息香醚、異丁基安息香醚、二苯甲酮、米其勒酮、氯硫雜蒽酮、十二烷基硫雜蒽酮、二甲基硫雜蒽酮、二乙基硫雜蒽酮、苯乙酮二乙基縮酮、苄基二甲基縮酮、1-羥基環己基苯基酮、2-羥基-2-甲基-1-苯基丙烷-1-酮等。該些可使用一種或兩種以上。相對於所述(甲基)丙烯酸系黏著性樹脂100質量份,光起始劑的添加量較佳為0.1質量份~15質量份,更佳為5質量份~10質量份。
所述紫外線硬化型黏著劑中亦可添加交聯劑。交聯劑可列舉:山梨糖醇聚縮水甘油醚、聚丙三醇聚縮水甘油醚、季戊四醇聚縮水甘油醚、二丙三醇聚縮水甘油醚等環氧系化合物,四羥甲基甲烷-三-β-氮丙啶基丙酸酯、三羥甲基丙烷-三-β-氮丙啶基丙酸酯、N,N'-二苯基甲烷-4,4'-雙(1-氮丙啶羧基醯胺)、N,N'-六亞甲基-1,6-雙(1-氮丙啶羧基醯胺)等氮丙啶系化合物,四亞甲基二異氰酸酯、六亞甲基二異氰酸酯、聚異氰酸酯等異氰酸酯系化合物等。所述紫外線硬化型黏著劑可為溶劑類型、乳膠類型、熱熔類型等的任一種。
交聯劑的含量通常較佳為交聯劑中的官能基數不會比(甲基)丙烯酸系黏著性樹脂中的官能基數多的程度的範圍。但是,於交聯反應中新產生官能基的情況、或交聯反應緩慢的情況下等,視需要亦可過剩地含有。 就提高黏著性樹脂層40的耐熱性或與密合力的平衡的觀點而言,相對於(甲基)丙烯酸系黏著性樹脂100質量份,(甲基)丙烯酸系黏著劑中的交聯劑的含量較佳為0.1質量份以上、15質量份以下。
本實施形態的黏著性樹脂層40包含導電性添加劑。藉此,可提高黏著性樹脂層40的抗靜電性。進而可抑制紫外線硬化後的黏著性膜100的飽和區域電壓的上昇。 導電性添加劑例如可列舉:陽離子性界面活性劑、陰離子性界面活性劑、非離子性界面活性劑、兩性界面活性劑、離子液體等。就可進一步提高黏著性樹脂層40的抗靜電性的觀點而言,較佳為選自陽離子性界面活性劑以及陰離子性界面活性劑中的至少一種,更佳為陽離子性界面活性劑。
陽離子性界面活性劑例如可列舉:十二烷基三甲基氯化銨、十四烷基二甲基苄基氯化銨、鯨蠟基二甲基苄基氯化銨、硬脂基二甲基苄基氯化銨、十四烷基三甲基氯化銨、十六烷基三甲基氯化銨、十八烷基三甲基氯化銨、雙十二烷基二甲基氯化銨(didodecyldimethylammonium chloride)、雙十四烷基二甲基氯化銨、雙十六烷基二甲基氯化銨、雙十八烷基二甲基氯化銨、十二烷基苄基二甲基氯化銨、十六烷基苄基二甲基氯化銨、十八烷基苄基二甲基氯化銨、棕櫚基三甲基氯化銨、油烯基三甲基氯化銨、二棕櫚基苄基甲基氯化銨、二油烯基苄基甲基氯化銨等。 陽離子性界面活性劑可列舉四級銨鹽或者胺鹽型,較佳為四級銨鹽。 其中,較佳為選自十四烷基二甲基苄基氯化銨、鯨蠟基二甲基苄基氯化銨、及硬脂基二甲基苄基氯化銨中的至少一種。該些中,特佳為十四烷基二甲基苄基氯化銨。
陰離子性界面活性劑例如可列舉:十二烷基二苯基醚二磺酸二銨、十二烷基二苯基醚二磺酸鈉、十二烷基二苯基醚二磺酸鈣、烷基二苯基醚二磺酸鈉等烷基二苯基醚二磺酸鹽;十二烷基苯磺酸鈉、十二烷基苯磺酸銨等烷基苯磺酸鹽;月桂基硫酸鈉、月桂基硫酸銨等烷基硫酸酯鹽;脂肪酸鈉、油酸鉀等脂肪族羧酸鹽;含聚氧伸烷基單元的硫酸酯鹽(例如:聚氧乙烯烷基醚硫酸鈉、聚氧乙烯烷基醚硫酸銨等聚氧乙烯烷基醚硫酸酯鹽;聚氧乙烯烷基苯基醚硫酸鈉、聚氧乙烯烷基苯基醚硫酸銨等聚氧乙烯烷基苯基醚硫酸酯鹽;聚氧乙烯多環苯基醚硫酸鈉、聚氧乙烯多環苯基醚硫酸銨等聚氧乙烯多環苯基醚硫酸酯鹽等);萘磺酸福馬林縮合物鈉等萘磺酸福馬林縮合物鹽;二烷基磺基丁二酸鈉、單烷基磺基丁二酸二鈉等烷基磺基丁二酸鹽;聚氧乙烯-聚氧丙二醇醚硫酸鹽;磺酸鹽或者分子中具有硫酸酯基及聚合性碳-碳(不飽和)雙鍵的界面活性劑等。
非離子性界面活性劑例如可列舉:聚氧乙烯月桂基醚、聚氧乙烯硬脂基醚、聚氧乙烯十三烷基醚、聚氧乙烯油烯基醚等聚氧伸烷基烷基醚化合物,聚氧乙烯辛基苯基醚、聚氧乙烯壬基苯基醚等聚氧伸烷基烷基苯基醚化合物,聚氧乙烯多環苯基醚等聚氧伸烷基多環苯基醚化合物等含聚氧伸烷基單元的醚化合物;聚氧乙烯單月桂酸酯、聚氧乙烯單硬脂酸酯、聚氧乙烯單油酸酯等聚氧伸烷基烷基酯化合物;聚氧乙烯烷基胺等聚氧伸烷基烷基胺化合物;脫水山梨糖醇單月桂酸酯、脫水山梨糖醇單硬脂酸酯、脫水山梨糖醇三油酸酯、聚氧乙烯脫水山梨糖醇單月桂酸酯、聚氧乙烯脫水山梨糖醇單油酸酯等脫水山梨糖醇化合物等。
兩性界面活性劑可列舉:月桂基甜菜鹼、月桂基二甲基胺氧化物等。
該些導電性添加劑可單獨使用一種,亦可將兩種以上組合使用。 相對於紫外線硬化型黏著性樹脂100質量份,黏著性樹脂層40中的導電性添加劑的含量較佳為0.01質量份以上、10質量份以下,更佳為0.1質量份以上、5質量份以下,尤佳為0.1質量份以上、2質量份以下。
黏著性樹脂層40例如可藉由在抗靜電層30上塗佈黏著劑塗佈液而形成。 塗佈黏著劑塗佈液的方法可採用現有公知的塗佈方法,例如:輥塗佈機法、反向輥塗佈機法、凹版輥法、棒塗法、缺角輪塗佈機法、模塗佈機法等。對所塗佈的黏著劑的乾燥條件並無特別限制,通常,較佳為於80℃~200℃的溫度範圍內乾燥10秒鐘~10分鐘。尤佳為於80℃~170℃下乾燥15秒鐘~5分鐘。為了充分促進交聯劑與(甲基)丙烯酸系黏著性樹脂的交聯反應,亦可於黏著劑塗佈液的乾燥結束後,於40℃~80℃下加熱5小時~300小時左右。
本實施形態的黏著性膜100中,黏著性樹脂層40的厚度通常為5 μm以上、550 μm以下,較佳為10 μm以上、400 μm以下,尤佳為30 μm以上、300 μm以下,特佳為50 μm以上、250 μm以下。若黏著性樹脂層40的厚度在所述範圍內,則對半導體晶圓表面的黏著性、與操作性的平衡良好。 另外,於本實施形態的黏著性膜100更包括後述的凹凸吸收性樹脂層20的情況下,黏著性樹脂層40的厚度較佳為100 μm以下,更佳為50 μm以下,尤佳為未滿30 μm,進而更佳為25 μm以下,進一步更佳為未滿20 μm,特佳為15 μm以下。藉此,可縮小黏著性樹脂層40的表面與抗靜電層30的距離,其結果為可使黏著性膜100的抗靜電性更良好。另外,於本實施形態的黏著性膜100更包括後述的凹凸吸收性樹脂層20的情況下,黏著性樹脂層40的厚度的下限值並無特別限定,就使黏著力良好的觀點而言,較佳為0.5 μm以上,更佳為1.0 μm以上,尤佳為3.0 μm以上,特佳為5.0 μm以上。
(抗靜電層) 本實施形態的黏著性膜100包括抗靜電層30。藉此,可於維持黏著性膜100的黏著性的狀態下提高黏著性膜100的抗靜電性,並可抑制從半導體晶圓上剝離黏著性膜100時所產生的靜電的量。
就使抗靜電層30的表面電阻值下降來抑制伴隨剝離的靜電的產生的觀點而言,構成抗靜電層30的材料較佳為包含導電性高分子。 導電性高分子例如可列舉:聚噻吩系導電性高分子、聚吡咯系導電性高分子、聚苯胺系導電性高分子、聚(對伸苯基伸乙烯)系導電性高分子、聚喹噁啉系導電性高分子等。 就光學特性或外觀、抗靜電性、塗敷性、穩定性等的平衡良好的觀點而言,較佳為聚噻吩系導電性高分子。聚噻吩系導電性高分子例如可列舉聚乙烯二氧噻吩、聚噻吩。 該些導電性高分子可單獨使用一種,亦可將兩種以上組合使用。
形成抗靜電層30的材料例如可更包含摻雜劑(dopant)、黏合劑樹脂等。 摻雜劑是作為摻雜劑而發揮功能,對導電性高分子更確實地賦予(摻雜)導電性者,例如可列舉磺酸系化合物。
磺酸系化合物例如可列舉:對甲苯磺酸、苯磺酸、乙基苯磺酸、辛基苯磺酸、十二烷基苯磺酸、均三甲苯磺酸、間二甲苯磺酸、聚苯乙烯磺酸、聚乙烯基磺酸等。就提高導電性高分子的溶解性或水分散性的觀點而言,較佳為聚苯乙烯磺酸或聚乙烯基磺酸。 磺酸系化合物可單獨使用一種,亦可將兩種以上組合使用。
藉由添加此種摻雜劑,導電性高分子與磺酸系化合物進行一部分反應而形成磺酸鹽,藉由該磺酸鹽的作用,抗靜電層30的抗靜電功能更進一步提高。 相對於導電性高分子100質量份,摻雜劑的調配比例例如為100質量份~300質量份。 作為導電性高分子與摻雜劑的組合,聚乙烯二氧噻吩(polyethylene dioxythiophene,PEDOT)與聚苯乙烯磺酸(polystyrene sulfonic acid,PSS)的組合由於抗靜電性更優異,故較佳。
就提高皮膜形成性或密合性等的觀點而言,構成抗靜電層30的材料亦可更包含黏合劑樹脂。 黏合劑樹脂例如可列舉:聚胺基甲酸酯系樹脂、聚酯系樹脂、(甲基)丙烯酸系樹脂、聚醚系樹脂、纖維素系樹脂、聚乙烯醇系樹脂、環氧樹脂、聚乙烯基吡咯啶酮、聚苯乙烯系樹脂、聚乙二醇、季戊四醇等。 黏合劑樹脂可單獨使用一種,亦可將兩種以上組合使用。例如相對於導電性高分子100質量份,黏合劑樹脂的含量為10質量份~500質量份。
就抗靜電性能的觀點而言,抗靜電層30的厚度較佳為0.01 μm以上、10 μm以下,更佳為0.01 μm以上、5 μm以下,尤佳為0.01 μm以上、1 μm以下。
(凹凸吸收性樹脂層) 如圖2所示,本實施形態的黏著性膜100較佳為於基材層10與抗靜電層30之間更包括凹凸吸收性樹脂層20。 藉此,可使黏著性膜100的凹凸吸收性良好,而且可使黏著性樹脂層40的厚度變薄,可縮小黏著性樹脂層40的表面與抗靜電層30的距離,其結果為可使黏著性膜100的抗靜電性更良好。
就機械強度與凹凸追隨性的平衡的觀點而言,凹凸吸收性樹脂層20的密度較佳為800 kg/m3
~990 kg/m3
,更佳為830 kg/m3
~980 kg/m3
,尤佳為850 kg/m3
~970 kg/m3
。
構成凹凸吸收性樹脂層20的樹脂若為顯示出凹凸吸收性者,則並無特別限定,例如可使用熱塑性樹脂。 更具體而言,可列舉:烯烴系樹脂、乙烯·極性單體共聚物、丙烯腈丁二烯苯乙烯(acrylonitrile butadiene styrene,ABS)樹脂、氯乙烯樹脂、偏二氯乙烯樹脂、(甲基)丙烯酸系樹脂、聚醯胺系樹脂、氟系樹脂、聚碳酸酯系樹脂、聚酯系樹脂等。 該些中,較佳為選自烯烴系樹脂及乙烯·極性單體共聚物中的至少一種。
烯烴系樹脂例如可列舉:線性低密度聚乙烯(linear low density polyethylene,LLDPE)、低密度聚乙烯、高密度聚乙烯、聚丙烯、包含乙烯及碳數3~12的α-烯烴的乙烯·α-烯烴共聚物、包含丙烯及碳數4~12的α-烯烴的丙烯·α-烯烴共聚物、乙烯·環狀烯烴共聚物、乙烯·α-烯烴·環狀烯烴共聚物等。 乙烯·極性單體共聚物可列舉:乙烯·(甲基)丙烯酸乙酯共聚物、乙烯·(甲基)丙烯酸甲酯共聚物、乙烯·(甲基)丙烯酸丙酯共聚物、乙烯·(甲基)丙烯酸丁酯共聚物等乙烯·不飽和羧酸酯共聚物;乙烯·乙酸乙烯酯共聚物、乙烯·丙酸乙烯酯共聚物、乙烯·丁酸乙烯酯共聚物、乙烯·硬脂酸乙烯酯共聚物等乙烯·乙烯基酯共聚物等。 構成凹凸吸收性樹脂層20的樹脂可單獨使用,亦可將兩種以上摻合使用。
乙烯·α-烯烴共聚物中的碳原子數3~12的α-烯烴例如可列舉:丙烯、1-丁烯、1-戊烯、3-甲基-1-丁烯、1-己烯、4-甲基-1-戊烯、3-甲基-1-戊烯、1-庚烯、1-辛烯、1-癸烯、1-十二烯等,較佳為丙烯、1-丁烯等。
該些中,就貼附時的凹凸追隨性優異的方面而言,較佳為選自低密度聚乙烯;聚丙烯;乙烯·丙烯共聚物、乙烯·1-丁烯共聚物、乙烯·丙烯·碳原子數4~12的α-烯烴的三元共聚物等乙烯·α-烯烴共聚物;丙烯·1-丁烯·碳原子數5~12的α-烯烴的三元共聚物;乙烯·乙酸乙烯酯共聚物等中的至少一種,更佳為選自乙烯·丙烯共聚物以及乙烯·乙酸乙烯酯共聚物中的至少一種。
凹凸吸收性樹脂層20的厚度若為可將半導體晶圓的凹凸形成面的凹凸埋入的厚度,則並無特別限制,例如較佳為10 μm以上、500 μm以下,更佳為20 μm以上、400 μm以下,尤佳為30 μm以上、300 μm以下,特佳為50 μm以上、250 μm以下。
本實施形態的黏著性膜100可於各層之間設置黏接層(未圖示)。藉由該黏接層,可提高各層之間的黏接性。 另外,本實施形態的黏著性膜100亦可進而積層脫模膜。
其次,對本實施形態的黏著性膜100的製造方法的一例進行說明。
首先,於基材層10的其中一面上,利用擠出層壓法來形成凹凸吸收性樹脂層20。繼而,藉由在另行準備的脫模膜上塗佈既定的導電性材料且使其乾燥,來形成抗靜電層30,將該抗靜電層30積層於凹凸吸收性樹脂層20上。繼而,藉由在抗靜電層30上塗佈黏著劑塗佈液且使其乾燥,來形成黏著性樹脂層40,獲得黏著性膜100。 另外,基材層10與凹凸吸收性樹脂層20可藉由共擠出成形而形成,亦可將膜狀的基材層10與膜狀的凹凸吸收性樹脂層20進行層壓(積層)而形成。
2.半導體裝置的製造方法 其次,對本實施形態的半導體裝置的製造方法的各步驟進行說明。
(步驟(A)) 首先,準備包括具有電路形成面的半導體晶圓、貼合於半導體晶圓的電路形成面側的黏著性膜100的結構體。 此種結構體例如可藉由從黏著性膜100的黏著性樹脂層40上剝離脫模膜,使黏著性樹脂層40的表面露出,於該黏著性樹脂層40上貼附半導體晶圓的電路形成面來製作。
此處,於黏著性膜100上貼附半導體晶圓的電路形成面時的條件並無特別限定,例如,溫度可設為30℃~80℃,壓力可設為0.05 MPa~0.5 MPa。
步驟(A)較佳為更包括藉由對黏著性膜100進行加溫並貼附於半導體晶圓的電路形成面上而製作結構體的步驟(A2)。藉此,可長時間使黏著性樹脂層40與半導體晶圓的黏接狀態良好。加溫溫度並無特別限定,例如為60℃~80℃。
將黏著性膜100貼附於半導體晶圓上的操作亦有利用人手來進行的情況,但通常利用安裝有卷狀的黏著膜的被稱為自動黏貼機的裝置來進行。
具有電路形成面的半導體晶圓並無特別限定,例如可列舉:於表面形成有配線、電容器、二極體或電晶體等電路的矽晶圓、碳化矽晶圓、化合物半導體晶圓、藍寶石晶圓等。
(步驟(B)) 其次,對所述半導體晶圓的與所述電路形成面側為相反側的面(以下亦稱為背面)進行背面研磨。 此處,所謂進行背面研磨,是指於不會使半導體晶圓破裂、或破損的情況下,進行薄化加工至既定的厚度為止。 例如,於研削機的夾盤等上固定所述結構體,對半導體晶圓的背面(電路非形成面)進行研削。
於此種的背面研削操作中,半導體晶圓的研削前的厚度通常為500 μm~1000 μm,相對於此,根據半導體晶片的種類等,通常研削至100 μm~600 μm左右為止。視需要有時亦研削至薄於100 μm。研削之前的半導體晶圓的厚度是根據半導體晶圓的直徑、種類等來適宜決定,研削後的晶圓的厚度是根據所獲得的晶片的尺寸、電路的種類等來適宜決定。
背面研削方式是採用貫穿進給(through feed)方式、切入進給(in feed)方式等公知的研削方式。各種研削是一邊將水供給至半導體晶圓及研磨石上而冷卻一邊進行。 背面研削結束後,視需要進行化學蝕刻。化學蝕刻是利用以下等方法來進行:於選自由包含氫氟酸、硝酸、硫酸、乙酸等單獨或者混合液的酸性水溶液,氫氧化鉀水溶液、氫氧化鈉水溶液等鹼性水溶液所組成的群組中的蝕刻液中,以貼附有黏著性膜100的狀態浸漬半導體晶圓。該蝕刻是以半導體晶圓背面所產生的應變的去除、晶圓的進一步薄層化、氧化膜等的去除、將電極形成於背面時的預處理等為目的而進行。蝕刻液是根據所述目的來適宜選擇。
(步驟(C)) 繼而,對黏著性膜100照射紫外線後,從所述半導體晶圓上去除黏著性膜100。 藉由對黏著性膜100照射紫外線,則黏著性樹脂層40進行光硬化而黏著性樹脂層40的黏著力下降。藉此,可從半導體晶圓上剝離黏著性膜100。 紫外線例如是從黏著性膜100的基材層10側照射。
對黏著性膜100照射的紫外線的線量較佳為300 mJ/cm2
以上,更佳為350 mJ/cm2
以上,尤佳為500 mJ/cm2
以上。 若紫外線的線量為所述下限值以上,則可使黏著性樹脂層40的黏著力充分下降,其結果為,可進一步抑制於半導體晶圓的電路形成面上產生殘膠。 另外,對黏著性膜100照射的紫外線的線量的上限並無特別限定,就生產性的觀點而言,例如為1500 mJ/cm2
以下,較佳為1200 mJ/cm2
以下。
對黏著性膜100照射紫外線,使黏著性樹脂層40的黏著力下降後,將黏著性膜100從半導體晶圓上剝離。 半導體晶圓的背面的研削完畢後,有時亦於剝離黏著性膜100之前經過化學蝕刻步驟。另外,視需要於黏著性膜100的剝離後,對半導體晶圓表面實施水洗、電漿洗滌等處理。
黏著性膜100的剝離亦有利用手來進行的情況,但通常可利用被稱為自動剝離機的裝置來進行。
剝離黏著性膜100後的半導體晶圓表面視需要進行洗滌。洗滌方法可列舉水洗滌、溶劑洗滌等濕式洗滌、電漿洗滌等乾式洗滌等。於濕式洗滌的情況下,亦可併用超音波洗滌。該些洗滌方法是根據半導體晶圓表面的污染狀況來適宜選擇。
(其他步驟) 進行步驟(A)~步驟(C)後,亦可進而進行將半導體晶圓切割成獨立片狀來獲得半導體晶片的步驟、或將所獲得的半導體晶片安裝於電路基板上的步驟等。該些步驟可基於公知的資訊來進行。
以上,已對本發明的實施形態進行了敘述,但該些為本發明的例示,亦可採用所述以外的多種構成。 [實施例]
以下,藉由實施例及比較例來對本發明進行具體說明,但本發明並不限定於此。
黏著性膜的製作中使用的材料的詳情是如以下所述。
<基材層> 聚對苯二甲酸乙二酯膜(厚度50 μm)
<凹凸吸收性樹脂層形成用的樹脂> 凹凸吸收性樹脂1:乙烯·乙酸乙烯酯共聚物(密度:960 kg/m3
,三井杜邦聚合化學(Mitsui-DuPont Polychemicals)公司製造的「艾瓦弗萊克斯(Evaflex)EV150」)
<抗靜電層形成用的材料> 抗靜電層形成用材料1:包含聚乙烯二氧噻吩/聚苯乙烯磺酸(PEDOT/PSS)的導電性材料(長瀨化成(Nagase ChemteX)公司製造,商品名:德納創(Denatron)P-504CT)
<導電性添加劑> 導電性添加劑1:十四烷基二甲基苄基氯化銨(日油公司製造,商品名:Nissan Cation M2
-100)
<光起始劑> 光起始劑1:苄基二甲基縮酮(巴斯夫(BASF)公司製造,商品名:豔佳固(Irgacure)651)
<黏著性樹脂層用塗佈液1> 將77質量份的丙烯酸正丁酯、16質量份的甲基丙烯酸甲酯、16質量份的丙烯酸2-羥基乙酯、及作為聚合起始劑的0.5質量份的苯甲醯基過氧化物進行混合。將其一邊攪拌一邊於85℃下花5小時滴加於加入有20質量份的甲苯、80質量份的乙酸乙酯的氮置換的燒瓶中,進而攪拌5小時而使其反應。反應結束後,將該溶液冷卻,於其中添加10質量份的甲苯、7質量份的甲基丙烯醯氧基乙基異氰酸酯(昭和電工(股)製造,製品名:卡倫茨(Karenz)MOI)、及0.02質量份的二月桂基酸二丁基錫,一邊吹入空氣一邊於85℃下進行12小時反應,獲得導入有聚合性碳-碳雙鍵的黏著劑聚合物1溶液。 於該溶液中,相對於共聚物(固體成分)100質量份,添加作為光起始劑的7質量份的苄基二甲基縮酮(巴斯夫(BASF)(股)製造,豔佳固(Irgacure)651)、2質量份的異氰酸酯系交聯劑(三井化學(股)製造,商品名:歐萊斯特(Olester)P49-75S)、作為一分子內具有兩個以上聚合性碳-碳雙鍵的低分子量化合物的12質量份的二季戊四醇六丙烯酸酯(東亞合成(股)製造,商品名:亞羅尼斯(Aronix)M-400)、0.5質量份的導電性添加劑1:十四烷基二甲基苄基氯化銨(日油(股)製造,Nissan Cation M2
-100),獲得黏著性樹脂層用塗佈液1。
<黏著性樹脂層用塗佈液2> 除了不添加導電性添加劑1以外,以與黏著性樹脂層用塗佈液1相同的方式獲得黏著性樹脂層用塗佈液2。
<黏著性樹脂層用塗佈液3> 將48質量份的丙烯酸乙酯、27質量份的丙烯酸-2-乙基己酯、20質量份的丙烯酸甲酯、5質量份的甲基丙烯酸縮水甘油酯、及作為聚合起始劑的0.5質量份的苯甲醯基過氧化物進行混合。將其一邊攪拌一邊於80℃下花5小時滴加於加入有65質量份的甲苯、50質量份的乙酸乙酯的氮置換的燒瓶中,進而攪拌5小時而使其反應。反應結束後,將該溶液冷卻,於其中添加25質量份的二甲苯、2.5質量份的丙烯酸、及0.5質量份的導電性添加劑1:十四烷基二甲基苄基氯化銨,一邊吹入空氣一邊於85℃下進行32小時反應,獲得導入有聚合性碳-碳雙鍵的黏著劑聚合物3溶液。 於該溶液中,相對於共聚物(固體成分)100質量份,添加作為光起始劑的7質量份的苄基二甲基縮酮(巴斯夫(BASF)(股)製造,豔佳固(Irgacure)651)、2質量份的異氰酸酯系交聯劑(三井化學(股)製造,商品名:歐萊斯特(Olester)P49-75S)、作為一分子內具有兩個以上聚合性碳-碳雙鍵的低分子量化合物的12質量份的二季戊四醇六丙烯酸酯(東亞合成(股)製造,商品名:亞羅尼斯(Aronix)M-400),獲得黏著性樹脂層用塗佈液3。
[實施例1] 於成為基材層的聚對苯二甲酸乙二酯膜上,將成為凹凸吸收性樹脂層的凹凸吸收性樹脂1以厚度195 μm擠出層壓而獲得兩層的積層膜。 繼而,藉由在另行準備的脫模膜上塗佈抗靜電層形成用材料1且使其乾燥,形成抗靜電膜,將該抗靜電膜積層於凹凸吸收性樹脂層上,藉此形成厚度為0.1 μm的抗靜電層。 繼而,於所獲得的積層膜的抗靜電層上塗佈黏著性樹脂層用塗佈液1後,使其乾燥而形成厚度為40 μm的黏著性樹脂層,獲得黏著性膜。 對所獲得的黏著性膜進行以下的評價。將所獲得的結果示於表1中。
[實施例2及實施例3、比較例1~比較例4] 除了如表1所示般變更抗靜電層的形成的有無、黏著性樹脂層的厚度、黏著性樹脂層用塗佈液的種類等以外,以與實施例1相同的方式分別製作黏著性膜。 分別對所獲得的黏著性膜進行以下的評價。將所獲得的結果分別示於表1中。
<評價> (1)飽和區域電壓的測定 對於黏著性膜中的黏著性樹脂層,於25℃的環境下使用高壓水銀燈(牛尾(Ushio)電機公司製造的UVX-02528S1AJA02),以照射強度100 mW/cm2
,照射紫外線量1080 mJ/cm2
的主波長365 nm的紫外線,使黏著性樹脂層進行光硬化。繼而,使用SSD靜電(Shishido Electrostatic)公司製造的靜電測試儀(Static Honestmeter)H-0110-S4作為測定裝置,於施加電壓為10 kV、試樣與電極的距離為20 mm、25℃、50%RH的條件下,對黏著性樹脂層的表面進行30秒的電壓施加,依據JIS L1094來分別算出黏著性樹脂層的表面的飽和區域電壓(V1
)以及飽和區域電壓V1
的半衰期。 另外,除了將紫外線量變更為200 mJ/cm2
~540 mJ/cm2
以外,以與所述飽和區域電壓(V1
)的測定相同的順序,分別測定黏著性樹脂層的表面的飽和區域電壓以及飽和區域電壓的半衰期。
(2)黏力的測定 將黏著性膜的黏著性樹脂層貼合於聚醯亞胺膜(製品名:卡普頓(Kapton)200H,東麗杜邦(Toray Dupont)公司製造),於25℃的環境下使用高壓水銀燈,自黏著性膜的基材層側以照射強度100 mW/cm2
,照射紫外線量1080 mJ/cm2
的主波長365 nm的紫外線,使黏著性樹脂層進行光硬化。繼而,將聚醯亞胺膜自黏著性膜剝離,使用探針黏性試驗機(「測試機器(TESTING MACHINES Inc.)公司製造的探針黏性試驗機:模式80-02-01」)作為測定裝置,利用如下方法來測定黏著性樹脂層的表面的黏力:使直徑為5 mm的探針與黏著性樹脂層的表面以10 mm/sec的速度接觸,以0.98 N/cm2
的接觸負荷來接觸10秒鐘後,以10 mm/sec的速度將探針於垂直方向上從黏著性樹脂層的表面剝離。 另外,除了將紫外線量變更為200 mJ/cm2
~540 mJ/cm2
以外,以與所述黏力的測定相同的順序,分別測定黏著性樹脂層的表面的黏力。
(3)抗靜電性的評價 黏著性膜的抗靜電性是利用以下的基準來評價。 ◎:飽和區域電壓V1
為1.0 kV以下者 〇:飽和區域電壓V1
為超過1.0 kV、為2.0 kV以下者 ×:飽和區域電壓V1
超過2.0 kV者
(4)對半導體晶圓表面的黏著性的評價 對半導體晶圓表面的黏著性是利用以下的基準來評價。 〇:未照射紫外線的黏著性樹脂層(即,紫外線量為0 mJ/cm2
者)的黏力為10 N/cm2
以上 ×:未照射紫外線量的黏著性樹脂層的黏力未滿10 N/cm2
(5)對半導體晶圓表面的耐污染性的評價 對半導體晶圓表面的耐污染性是利用以下的基準來評價。 〇:藉由紫外線量為1080 mJ/cm2
的照射而進行光硬化的黏著性樹脂層的黏力為0.1 N/cm2
以下 ×:藉由紫外線量為1080 mJ/cm2
的照射而進行光硬化的黏著性樹脂層的黏力超過0.1 N/cm2
(6)凹凸吸收性的評價 〇:當貼附於具有凸塊電極的半導體晶圓的凸塊電極形成面時,凸塊電極未破裂、且與半導體晶圓的密合性良好者 ×:當貼附於具有凸塊電極的半導體晶圓的凸塊電極形成面時,凸塊電極破裂、或者與半導體晶圓的密合性不良者 凹凸吸收性的評價是使用配置有凸塊高80 μm、凸塊間距300 μm、凸塊徑150 μm的凸塊的帶凸塊的半導體晶圓進行,黏著膜的貼附是使用輥層壓機(製品名:DR3000II,日東精機公司製造),於輥速度:2 mm/sec、輥壓力:0.4 MPa、膠帶溫度:80℃的條件下進行,並使用光學顯微鏡來評價貼附後的凹凸吸收性。
[表1] 表1
依序包括基材層、抗靜電層、以及黏著性樹脂層且黏著性樹脂層包含導電性添加劑的實施例1~實施例3的黏著性膜對半導體晶圓表面的黏著性與耐污染性的平衡優異,而且抗靜電性亦優異。即,可理解為:根據本實施形態的黏著性膜100,紫外線硬化後的抗靜電性優異,可抑制從半導體晶圓上剝離時所產生的靜電的量,可穩定地獲得品質優異的半導體零件。 相對於此,黏著性樹脂層不包含導電性添加劑的比較例1~比較例3的黏著性膜、或不包括抗靜電層的比較例3及比較例4的黏著性膜的抗靜電性差。
本申請案主張以2016年7月26日提出申請的日本申請案特願2016-146134號作為基礎的優先權,將其揭示的全部併入本文中。
10‧‧‧基材層
20‧‧‧凹凸吸收性樹脂層
30‧‧‧抗靜電層
40‧‧‧黏著性樹脂層
100‧‧‧黏著性膜
20‧‧‧凹凸吸收性樹脂層
30‧‧‧抗靜電層
40‧‧‧黏著性樹脂層
100‧‧‧黏著性膜
所述目的及其他目的、特徵以及優點藉由以下所述的較佳的實施形態以及其中隨附的以下的圖式而進一步明確。
圖1是示意性地表示本發明的實施形態的黏著性膜的結構的一例的剖面圖。 圖2是示意性地表示本發明的實施形態的黏著性膜的結構的一例的剖面圖。
10‧‧‧基材層
30‧‧‧抗靜電層
40‧‧‧黏著性樹脂層
100‧‧‧黏著性膜
Claims (11)
- 一種半導體裝置的製造方法,其至少包括: 步驟(A),準備包括具有電路形成面的半導體晶圓、貼合於所述半導體晶圓的所述電路形成面側的黏著性膜的結構體; 步驟(B),對所述半導體晶圓的與所述電路形成面側為相反側的面進行背面研磨;以及 步驟(C),對所述黏著性膜照射紫外線後從所述半導體晶圓上去除所述黏著性膜, 作為所述黏著性膜,使用如下的黏著性膜: 其依序包括基材層、抗靜電層、以及包含導電性添加劑的黏著性樹脂層,且所述黏著性樹脂層以成為所述半導體晶圓的所述電路形成面側的方式使用。
- 如申請專利範圍第1項所述的半導體裝置的製造方法,其中 於所述半導體晶圓的所述電路形成面上形成有凸塊電極。
- 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法,其中 所述黏著性樹脂層包含紫外線硬化型黏著性樹脂。
- 如申請專利範圍第3項所述的半導體裝置的製造方法,其中 相對於所述紫外線硬化型黏著性樹脂100質量份,所述黏著性樹脂層中的所述導電性添加劑的含量為0.01質量份以上、10質量份以下。
- 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法,其中 所述導電性添加劑包含選自陽離子性界面活性劑、陰離子性界面活性劑、非離子性界面活性劑、兩性界面活性劑、及離子液體中的一種或兩種以上。
- 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法,其中 所述黏著性樹脂層的厚度為5 μm以上、550 μm以下。
- 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法,其中 所述抗靜電層包含導電性高分子。
- 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法,其中 於所述基材層與所述抗靜電層之間更包括凹凸吸收性樹脂層。
- 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法,其中 所述步驟(C)中,藉由對所述黏著性膜照射300 mJ/cm2 以上的線量的紫外線,而使所述黏著性樹脂層進行光硬化,使所述黏著性樹脂層的黏著力下降後,從所述半導體晶圓上去除所述黏著性膜。
- 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法,其中 利用下述方法來測定的紫外線硬化後的所述黏著性樹脂層表面的飽和區域電壓V1 為1.0 kV以下: (方法) 對於所述黏著性樹脂層,於25℃的環境下使用高壓水銀燈,以照射強度100 mW/cm2 ,照射紫外線量1080 mJ/cm2 的主波長365 nm的紫外線,使所述黏著性樹脂層進行光硬化;繼而,於施加電壓為10 kV、試樣與電極的距離為20 mm、25℃、50%RH的條件下,對所述黏著性樹脂層的表面進行30秒的電壓施加,依據日本工業標準L1094來算出所述黏著性樹脂層的表面的飽和區域電壓(V1 )。
- 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法,其中 利用下述方法來測定的紫外線硬化後的所述黏著性樹脂層的表面的黏力為0.1 N/cm2 以下: (方法) 將所述黏著性膜的所述黏著性樹脂層貼合於聚醯亞胺膜,於25℃的環境下使用高壓水銀燈,自所述黏著性膜的所述基材層側,以照射強度100 mW/cm2 ,照射紫外線量1080 mJ/cm2 的主波長365 nm的紫外線,使所述黏著性樹脂層進行光硬化;繼而,自所述黏著性膜剝離所述聚醯亞胺膜,使用探針黏性試驗機作為測定裝置,利用以下方法測定所述黏著性樹脂層的表面的黏力:使直徑為5 mm的探針與所述黏著性樹脂層的表面以10 mm/sec的速度接觸,以0.98 N/cm2 的接觸負荷來接觸10秒鐘後,以10 mm/sec的速度將所述探針於垂直方向上從所述黏著性樹脂層的表面剝離。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111868192A (zh) * | 2018-03-20 | 2020-10-30 | 琳得科株式会社 | 粘着胶带及半导体装置的制造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2017169959A1 (ja) * | 2016-03-31 | 2017-10-05 | 三井化学東セロ株式会社 | 半導体装置の製造方法 |
WO2020116284A1 (ja) * | 2018-12-05 | 2020-06-11 | リンテック株式会社 | 保護膜形成用複合シート、及び半導体チップの製造方法 |
SG11202109973WA (en) * | 2019-03-14 | 2021-10-28 | Mitsui Chemicals Tohcello Inc | Method for manufacturing electronic device |
WO2021157441A1 (ja) * | 2020-02-04 | 2021-08-12 | 三井化学東セロ株式会社 | 電子装置の製造方法 |
TW202212513A (zh) * | 2020-06-10 | 2022-04-01 | 日商三井化學東賽璐股份有限公司 | 電子裝置的製造方法 |
JP2022116798A (ja) * | 2021-01-29 | 2022-08-10 | 日東電工株式会社 | 電子部品転写用粘着シートおよび電子部品転写用粘着シートを用いた電子部品の加工方法 |
TWI832291B (zh) | 2022-06-15 | 2024-02-11 | 南亞塑膠工業股份有限公司 | 保護膠帶及晶圓的加工方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008255345A (ja) | 2007-03-12 | 2008-10-23 | Furukawa Electric Co Ltd:The | 半導体固定用粘着テープ |
JP2009260332A (ja) * | 2008-03-26 | 2009-11-05 | Furukawa Electric Co Ltd:The | 半導体ウエハ固定用帯電防止性粘着テープ |
JP2010177542A (ja) * | 2009-01-30 | 2010-08-12 | Lintec Corp | 帯電防止性粘着シート |
JP5534896B2 (ja) | 2010-03-30 | 2014-07-02 | 古河電気工業株式会社 | 帯電防止性半導体加工用粘着テープ |
JP5705447B2 (ja) * | 2010-03-31 | 2015-04-22 | 古河電気工業株式会社 | 表面保護用粘着テープ |
JP5631082B2 (ja) | 2010-07-07 | 2014-11-26 | 日東電工株式会社 | 活性エネルギー線硬化型再剥離用粘着剤 |
TW201207070A (en) | 2010-07-05 | 2012-02-16 | Nitto Denko Corp | Active energy ray-curable pressure-sensitive adhesive for re-release and dicing die-bonding film |
US20150303093A1 (en) * | 2012-11-05 | 2015-10-22 | Lintec Corporation | Adhesive Sheet |
JP6129629B2 (ja) | 2012-12-10 | 2017-05-17 | 日東電工株式会社 | ダイシングテープ一体型接着シート、及び、ダイシングテープ一体型接着シートを用いた半導体装置の製造方法 |
KR102108102B1 (ko) * | 2012-12-10 | 2020-05-11 | 닛토덴코 가부시키가이샤 | 다이싱 테이프 일체형 접착 시트, 다이싱 테이프 일체형 접착 시트를 이용한 반도체 장치의 제조 방법 및 반도체 장치 |
WO2015064574A1 (ja) * | 2013-10-30 | 2015-05-07 | リンテック株式会社 | 半導体接合用接着シートおよび半導体装置の製造方法 |
JP6140066B2 (ja) | 2013-12-10 | 2017-05-31 | リンテック株式会社 | 半導体加工用シート |
US10224230B2 (en) * | 2014-10-23 | 2019-03-05 | Lintec Corporation | Surface protective sheet |
JP6559151B2 (ja) | 2014-10-23 | 2019-08-14 | リンテック株式会社 | 表面保護用シート |
JP6550270B2 (ja) * | 2015-05-28 | 2019-07-24 | 日東電工株式会社 | バックグラインドテープ |
WO2018003893A1 (ja) * | 2016-06-30 | 2018-01-04 | 三井化学東セロ株式会社 | 半導体ウェハ加工用粘着性フィルム |
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2017
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- 2017-07-20 US US16/319,874 patent/US10515839B2/en active Active
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- 2017-07-20 SG SG11201900617YA patent/SG11201900617YA/en unknown
- 2017-07-25 TW TW106124844A patent/TWI756244B/zh active
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2018
- 2018-07-24 JP JP2018138721A patent/JP7202802B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111868192A (zh) * | 2018-03-20 | 2020-10-30 | 琳得科株式会社 | 粘着胶带及半导体装置的制造方法 |
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JP7202802B2 (ja) | 2023-01-12 |
JP6404501B2 (ja) | 2018-10-10 |
KR102259854B1 (ko) | 2021-06-01 |
WO2018021145A1 (ja) | 2018-02-01 |
US20190267273A1 (en) | 2019-08-29 |
SG11201900617YA (en) | 2019-02-27 |
US10515839B2 (en) | 2019-12-24 |
TWI756244B (zh) | 2022-03-01 |
JP2018195840A (ja) | 2018-12-06 |
JPWO2018021145A1 (ja) | 2018-07-26 |
KR20190021410A (ko) | 2019-03-05 |
KR20210008165A (ko) | 2021-01-20 |
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