TW201544235A - 加工方法 - Google Patents
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- TW201544235A TW201544235A TW104104407A TW104104407A TW201544235A TW 201544235 A TW201544235 A TW 201544235A TW 104104407 A TW104104407 A TW 104104407A TW 104104407 A TW104104407 A TW 104104407A TW 201544235 A TW201544235 A TW 201544235A
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- acid
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
本發明之課題在於提供簡單之步驟的加工方法,其可以將含有金屬之被加工物適當地加工。解決手段為將至少於被加工面含有金屬之被加工物以具有磨削磨石或研磨墊之加工手段加工的加工方法,其做成以下之構成:包含邊在被加工物之被加工面上供應加工液邊以加工手段磨削或研磨被加工物之加工步驟,且加工液包含有機酸與氧化劑。
Description
本發明是有關於將含有金屬之被加工物加工的加工方法。
近年來,在晶圓狀態下進行到封裝之WL-CSP(晶圓級晶片尺寸封裝(Wafer Level Chip Size Package))正逐漸受到重視。在WL-CSP中,是在晶圓上形成有裝置之表面側設置再配線層以及金屬支柱(電極)而以樹脂等密封,並將密封後的晶圓(WL-CSP基板)用切削等方法來分割。由於此WL-CSP可照分割後之晶片的大小原樣地形成封裝的大小,因而有利於小型化。
然而,具延展性之金屬等材料,一旦施加應力即可塑性地被延伸,所以無法用磨削與研磨等方法輕易地加工。因此,要將例如含有金屬之WL-CSP基板之類的被加工物的密封層側做薄時,除了要以磨削等方法削除密封層等之外,還必須用車刀(bit)切削等其他方法加工金屬(參照例如,專利文獻1)。
專利文獻1:日本專利特開2013-8898號公報
但是,當如上所述地組合不同的複數種方法時,會使步驟複雜化而使製造成本也變高。本發明是有鑒於所述問題點而作成的,其目的在於提供一種可將含有金屬之被加工物適當地加工的簡單之步驟的加工方法。
根據本發明所提供的加工方法,是將至少在被加工面上含有金屬之被加工物以具有磨削磨石或研磨墊之加工手段加工的加工方法,其特徵為包含:一邊在被加工物之被加工面上供應加工液,一邊以該加工手段磨削或研磨被加工物之加工步驟,且該加工液包含有機酸與氧化劑。
又,較理想的是,在本發明中,該加工液還包含防蝕劑。
在本發明之加工方法中,可藉由供應包含有機酸與氧化劑之加工液,將被加工面所含有之金屬改質而抑制延展性,並且將被加工物予以磨削或研磨。因此,能以簡單之步驟將含有金屬的被加工物適當地加工。
2‧‧‧磨削裝置(加工裝置)
4‧‧‧基台
4a、4b‧‧‧開口
6‧‧‧支撐壁
8.‧‧‧搬送機構
10a、10b‧‧‧晶圓盒
11‧‧‧被加工物
11a‧‧‧表面(被加工面)
12‧‧‧對位機構
13‧‧‧保護構件
14‧‧‧搬入機構
16‧‧‧X軸移動台
18‧‧‧防水蓋
20‧‧‧工作夾台
22‧‧‧Z軸移動機構
24‧‧‧Z軸導軌
26‧‧‧Z軸移動台
28‧‧‧Z軸滾珠螺桿
30‧‧‧Z軸脈衝馬達
32‧‧‧磨削機構(加工手段)
34‧‧‧主軸殼體
36‧‧‧主軸
38‧‧‧輪座
40‧‧‧磨削輪
40a‧‧‧輪基台
40b‧‧‧磨削磨石
42‧‧‧噴嘴
44‧‧‧搬出機構
46‧‧‧洗淨機構
48‧‧‧操作面板
50‧‧‧加工液
圖1為模式地表示本實施形態之加工方法中所使
用的磨削裝置(加工裝置)的構成例之立體圖。
圖2為模式地表示加工步驟之立體圖。
參照附圖以說明本發明之實施形態。再者,在本實施形態中,雖然是針對以含有磨削用磨石(磨削磨石)之磨削機構(加工手段)來磨削板狀的被加工物的加工方法進行說明,但是本發明之加工方法並不受限於此。例如,用含有研磨用墊體(研磨墊)之研磨機購(加工手段)來研磨板狀的被加工物的情形等,也可適用本發明之加工方法。
首先,說明本實施形態之加工方法所使用的磨削裝置(加工裝置)的構成例。圖1是模式地表示本實施形態之磨削裝置的構成例之立體圖。如圖1所示,本實施形態之磨削裝置(加工裝置)2包括有搭載各種構成之長方體狀的基台4。基台4的後端有往上方延伸之支撐壁6直立設置。
基台4的上表面前側上形成有開口4a,此開口4a內設有用以搬送板狀的被加工物11之搬送機構8。又,開口4a的側面的區域可供收容被加工物11之晶圓盒10a、10b載置。
被加工物11為例如圓盤狀的WL-CSP基板,且在成為被加工面之表面11a(參照圖2)側埋設有金屬支柱(電極)。又,在本實施形態中,被加工物11之背面側貼附有與被加工物11直徑大致相同之保護構件13(參照圖2)。
但是,被加工物11的構成並不受限於此。只要是
金屬板,或設有TSV(直通矽穿孔(Through Silicon Via))之TSV晶圓、形成有金屬膜之晶圓等在被加工面上含有金屬的板狀物,均可用本實施形態之加工方法來適當地加工。又,也可以在被加工物11的背面側貼附保護構件13。
在供晶圓盒10a載置之載置區域的後方,設有對位機構12,以進行被暫置之被加工物11的位置校準。例如,可將被搬送機構8從晶圓盒10a搬送出之被加工物11載置於對位機構12而對中心進行位置校準。
在對位機構12的後方,設有將被加工物11吸引保持而旋轉之搬入機構14。在搬入機構14的後方形成有開口4b。在此開口4b內配置有X軸移動台16、使X軸移動台16在X軸方向(前後方向)上移動之X軸移動機構(圖未示),以及覆蓋X軸移動機構之防水蓋18。
X軸移動機構具有一對平行於X軸方向之X軸導軌(圖未示),且在X軸導軌上將X軸移動台16設置成可滑動。在X軸移動台16的下表面側,固定有螺帽部(圖未示),且是將與X軸導軌平行之X軸滾珠螺桿(圖未示)螺合於此螺帽部。
在X軸滾珠螺桿之一端部上,連結有X軸脈衝馬達(圖未示)。藉由以X軸脈衝馬達使X軸滾珠螺桿旋轉,X軸移動台16即可沿著X軸導軌在X軸方向上移動。在X軸移動台16上設有用以吸引保持被加工物11的工作夾台20。
工作夾台20是與馬達等之旋轉驅動源(圖未示)連結,且以繞著在Z軸方向(垂直方向)上延伸之旋轉軸的方
式旋轉。又,工作夾台20可藉由上述X軸移動機構,而在將被加工物11搬入搬出之前方的搬入搬出位置與將被加工物11磨削之後方的磨削位置之間移動。
工作夾台20的上表面的局部形成為吸引保持被加工物11之保持面。此保持面可通過形成於工作夾台20內部之流路(圖未示)與吸引源(圖未示)連接。被搬入機構14搬入之被加工物11,會因作用於保持面之吸引源的負壓而被吸引保持在工作夾台20上。
在支撐壁6的前表面設有Z軸移動機構22。Z軸移動機構22具有一對平行於Z軸方向之Z軸導軌24,且在此Z軸導軌24上將Z軸移動台26設置成可滑動。在Z軸移動台26後表面側(背面側)固定有螺帽部(圖未示),且是將與Z軸導軌24平行之Z軸滾珠螺桿28螺合於此螺帽部。
於此Z軸滾珠螺桿28之一端部連結有Z軸脈衝馬達30。藉由以Z軸脈衝馬達30使Z軸滾珠螺桿28旋轉,Z軸移動台26即可沿著Z軸導軌24在Z軸方向上移動。
在與Z軸導軌24接近的位置上,附設有Z軸尺規(圖未示),用以表示Z軸方向中的Z軸移動台26的位置(高度位置)。Z軸方向中的Z軸移動台26的位置可以藉Z軸移動台26所裝配的尺規讀取機構(圖未示)而被讀取。
在Z軸移動台26的前表面(表面)上,設有磨削被加工物11的磨削機構(加工手段)32。磨削機構32包括有固定在Z軸移動台26上的主軸殼體34。於主軸殼體34上將主軸36支撐成可環繞著在Z軸方向上延伸之旋轉軸地旋轉。
主軸36的下端部固定有圓盤狀之輪座38,輪座38的下表面裝設有與輪座38的直徑大致相同的磨削輪40。磨削輪40包含以不銹鋼等金屬材料形成之圓盤狀的輪基台40a。輪基台40a的下表面沿著整個周圍固定有複數個磨削磨石40b。
主軸36的上端側連結有馬達等之旋轉驅動源(圖未示),磨削輪40是藉著由旋轉驅動源所傳達的旋轉力而旋轉。又,磨削輪40是藉由上述的Z軸移動機構22而被按壓於受到工作夾台20所吸引保持之被加工物11的表面11a上。
在與磨削機構32相鄰之位置上設有噴嘴42,可將加工液50(參照圖2)供應到被加工物11之表面11a。此噴嘴42與加工液供應源(圖未示)相連接。藉由供應加工液50,並且接觸旋轉的磨削輪40(磨削磨石40b),便可將含有金屬之被加工物11的表面11a側適當地磨削(加工)。有關加工液50之詳細內容如後述。
在Y軸方向(左右方向)上與搬入機構14相鄰之位置上,設有將被加工物11吸引保持而旋轉之搬出機構44。在搬出機構44的前方,且供晶圓盒10b載置的載置區域的後方處,配置有用以洗淨磨削後之被加工物11的洗淨機構46。
已用洗淨機構46洗淨之被加工物11,可用搬送機構8搬送,並收容到晶圓盒10b中。開口4a的前方設有操作面板48,用於輸入工作夾台20及主軸36之旋轉數、磨削輪40之下降速度、加工液50之供應量等磨削條件。
其次,說明使用上述之磨削裝置2之加工方法。首先,實施使被加工物11保持在工作夾台20上之保持步驟。在此保持步驟中,是使固定於被加工物11的背面側之保護構件13接觸於工作夾台20之保持面,使吸引源之負壓作用。藉此,被加工物11便可透過保護構件13而被吸引保持於工作夾台20上。
在保持步驟之後,實施加工被加工物11之加工步驟。圖2為模式地表示加工步驟之立體圖。在加工步驟中,是邊使工作夾台20與主軸36旋轉,邊使磨削輪40下降,而使磨削磨石40b接觸於被加工物11的表面11a。並且,從噴嘴42將加工液50供應到被加工物11的表面11a。
在本實施形態之加工方法中,是使用包含有機酸與氧化劑之加工液50。藉由此加工液50,可以將被加工物11的表面11a所含有的金屬加以改質而抑制住延展性,並且磨削被加工物11。因此,透過此磨削,不會有從金屬產生毛邊(突起物)的情形。又,僅藉著此研削,便能將含有金屬之被加工物11適當地加工,所以不需組合其他的方法。
作為有機酸,可採用例如,分子內至少具有1個羧基與至少1個胺基的化合物。此時,胺基中之至少1個宜為2級或3級的胺基。又,作為有機酸而使用之化合物宜具有取代基。
可以作為有機酸而使用的胺基酸,可以列舉出甘胺酸、二羥乙基甘胺酸、甘胺醯甘胺酸、羥乙基甘胺酸、N-甲基甘胺酸、β-丙胺酸、L-丙胺酸、L-2-胺基丁酸、L-
正纈胺酸、L-纈胺酸、L-白胺酸、L-正白胺酸、L-別異白胺酸、L-異白胺酸、L-***酸、L-脯胺酸、肌胺酸、L-鳥胺酸、L-離胺酸、牛磺酸、L-絲胺酸、L-蘇胺酸、L-別蘇胺酸、L-高絲胺酸、L-甲狀腺素、L-酪胺酸、3,5-二碘-L-酪胺酸、β-(3,4-二羥基苯基)-L-丙胺酸、4-羥基-L-脯胺酸、L-半胱胺酸、L-甲硫胺酸、L-乙硫胺酸、L-羊毛硫胺酸、L-胱硫醚、L-胱胺酸、L-氧化半胱胺酸、L-麩胺酸、L-天冬胺酸、S-(羧甲基)-L-半胱胺酸、4-胺基丁酸、L-天冬醯胺酸、L-麩醯胺酸、氮絲胺酸、L-刀豆胺酸、L-瓜胺酸、L-精胺酸、δ-羥基-L-離胺酸、肌酸、L-犬尿胺酸、L-組胺酸、1-甲基-L-组胺酸、3-甲基-L-組胺酸、L-色胺酸、放線菌黴素C1、麥角硫鹼(ergothioneine)、蜂毒明肽(apamin)、第一型血管收縮素(angiotensin I)、第二型血管收縮素(angiotensin II)以及抗痛素(antipain)等。其中尤以甘胺酸、L-丙胺酸、L-脯胺酸、L-組胺酸、L-離胺酸,以及二羥乙基甘胺酸為較佳。
又,可以作為有機酸而使用的胺基多元酸(amino polyacid),可以列舉出亞胺二乙酸、氮基三乙酸、二乙三胺五乙酸、乙二胺四乙酸、羥乙基亞胺二乙酸、氮基三亞甲基膦酸(nitrilotris(methylene)phosphonic acid)、乙二胺-N,N,N',N'-四亞甲基磺酸、1,2-二胺丙烷四乙酸、二醇醚二胺四乙酸、反式環己烷二胺四乙酸、乙二胺鄰羥基苯基乙酸、乙二胺二琥珀酸(SS體)、β-丙胺酸二乙酸、N-(2-羧酸根合乙基)-L-天冬胺酸、N,N'-雙(2-羥基芐基)乙二胺-N,N'-
二乙酸等。
此外,可以作為有機酸而使用之羧酸,可以列舉出甲酸、乙醇酸、丙酸、乙酸、丁酸、戊酸、己酸、草酸、丙二酸、戊二酸、己二酸、蘋果酸、琥珀酸、庚二酸、氫硫乙酸、乙醛酸、氯乙酸、丙酮酸、乙醯乙酸、戊二酸等之飽和羧酸,或丙烯酸、甲基丙烯酸、巴豆酸、反丁烯二酸、順丁烯二酸、中康酸、檸康酸、烏頭酸等之不飽和羧酸、安息香酸類、甲苯甲酸、鄰苯二甲酸類、萘甲酸類、焦蜜石酸、萘二甲酸等之環狀不飽和羧酸等。
作為氧化劑,可以使用例如,過氧化氫、過氧化物、硝酸鹽、碘酸鹽、過碘酸鹽、次氯酸鹽、亞氯酸鹽、氯酸鹽、過氯酸鹽、過硫酸鹽、重鉻酸鹽、過錳酸鹽、鈰酸鹽、釩酸鹽、臭氧水及銀(II)鹽、鐵(III)鹽,或其有機錯鹽等。
又,也可在加工液50中混合防蝕劑。藉由混合防蝕劑,可防止被加工物11中所含有之金屬腐蝕(溶出)。作為防蝕劑,較理想的是使用例如,分子內具有3個以上的氮原子,且具有稠環構造之芳香雜環化合物,或分子內具有4個以上的氮原子之芳香雜環化合物。此外,芳香雜環化合物宜包含羧基、磺酸基、羥基、烷氧基。具體而言,宜為四唑衍生物、1,2,3-***衍生物,以及1,2,4-***衍生物。
可以作為防蝕劑而使用之四唑衍生物,可以列舉出在形成四唑環之氮原子上不具取代基,且在四唑的第5位置上導入以下的基之四唑衍生物:選自於由磺酸基、胺基、
胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基,或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代之烷基。
又,可以作為防蝕劑而使用的1,2,3-***衍生物,可以列舉出在形成1,2,3-***環之氮原子上不具有取代基,且在1,2,3-***的第4位置及/或第5位置上導入以下的基之***衍生物:選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基,或是用選自於羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代的烷基或芳基。
又,可以作為防蝕劑而使用之1,2,4-***衍生物,可列舉出在形成1,2,4-***環之氮原子上不具有取代基,且在1,2,4-***的第2位置及/或第5位置上導入以下的基之***衍生物:選自於由磺酸基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基,或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代的烷基或芳基。
在本實施形態之加工方法中,是將主軸36的旋轉數設定在例如6000rpm,並將工作夾台20之旋轉數設定在例如300rpm。然而,主軸36及工作夾台20之旋轉數並不受限於此,可任意變更。
在如上述的條件下,只要將主軸14以預定之進給速度降下,即可磨削被加工物11的表面11a。可一邊用接觸式或非接觸式之厚度測量感測器量測被加工物11的厚度一邊實施此磨削。當被加工物11達到預定之厚度後,即可結束加工步驟。
如以上所述,在本實施形態之加工方法中,藉由供應包含有機酸與氧化劑之加工液50,就可以在將表面(被加工物)11a的金屬改質而抑制住延展性的情形下,磨削(或研磨)被加工物11。因此,用簡單的步驟就可以將含有金屬之被加工物11適當地加工。
再者,本發明並不受限於上述實施形態的記載,並可作各種變更而實施。例如,加工液50不一定要限定成上述之構成。作為有機酸,也可使用其他之胺基酸、胺基多元酸、羧酸等。又,作為防蝕劑,也可使用其它的唑化合物(四唑、***、苯并***等)。
另外,上述實施形態之構成、方法等,只要在不脫離本發明之目的之範圍內,均可適當變更而實施。
11‧‧‧被加工物
11a‧‧‧表面(被加工面)
13‧‧‧保護構件
20‧‧‧工作夾台
32‧‧‧磨削機構(加工手段)
36‧‧‧主軸
38‧‧‧輪座
40‧‧‧磨削輪
40a‧‧‧輪基台
40b‧‧‧磨削磨石
42‧‧‧噴嘴
50‧‧‧加工液
Claims (2)
- 一種加工方法,是將至少在被加工面上含有金屬之被加工物以具有磨削磨石或研磨墊之加工手段加工的加工方法,其特徵為包含:一邊在被加工物之被加工面上供應加工液,一邊以該加工手段磨削或研磨被加工物之加工步驟,且該加工液包含有機酸與氧化劑。
- 如請求項1之加工方法,其中,該加工液中還包含防蝕劑。
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US (1) | US11040427B2 (zh) |
JP (1) | JP6366308B2 (zh) |
KR (1) | KR102058767B1 (zh) |
CN (1) | CN104916582B (zh) |
TW (1) | TWI647069B (zh) |
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US11745299B2 (en) | 2018-12-20 | 2023-09-05 | Okamoto Machine Tool Works, Ltd. | Grinding method of composite substrate including resin and grinding apparatus thereof |
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JP7150390B2 (ja) * | 2018-02-14 | 2022-10-11 | 株式会社ディスコ | 加工装置 |
CN113021180A (zh) * | 2021-03-12 | 2021-06-25 | 长江存储科技有限责任公司 | 一种研磨轮、研磨设备 |
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- 2014-03-12 JP JP2014049050A patent/JP6366308B2/ja active Active
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- 2015-02-10 TW TW104104407A patent/TWI647069B/zh active
- 2015-03-10 KR KR1020150033160A patent/KR102058767B1/ko active IP Right Grant
- 2015-03-11 US US14/644,863 patent/US11040427B2/en active Active
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US11745299B2 (en) | 2018-12-20 | 2023-09-05 | Okamoto Machine Tool Works, Ltd. | Grinding method of composite substrate including resin and grinding apparatus thereof |
TWI822931B (zh) * | 2018-12-20 | 2023-11-21 | 日商岡本工作機械製作所股份有限公司 | 包含樹脂的複合基板的磨削方法和磨削裝置 |
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Publication number | Publication date |
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TWI647069B (zh) | 2019-01-11 |
JP2015171748A (ja) | 2015-10-01 |
KR102058767B1 (ko) | 2019-12-23 |
CN104916582A (zh) | 2015-09-16 |
KR20150106842A (ko) | 2015-09-22 |
JP6366308B2 (ja) | 2018-08-01 |
CN104916582B (zh) | 2019-11-19 |
US20150261211A1 (en) | 2015-09-17 |
US11040427B2 (en) | 2021-06-22 |
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