TW201508202A - Illumination device - Google Patents

Illumination device Download PDF

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Publication number
TW201508202A
TW201508202A TW103110338A TW103110338A TW201508202A TW 201508202 A TW201508202 A TW 201508202A TW 103110338 A TW103110338 A TW 103110338A TW 103110338 A TW103110338 A TW 103110338A TW 201508202 A TW201508202 A TW 201508202A
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Taiwan
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light
illuminating
carrier
elements
semiconductor
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TW103110338A
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Chinese (zh)
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TWI570350B (en
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Chi-Chih Pu
Chen-Hong Lee
Tzu-Hsiang Wang
Sheng-Hung Hsu
Wei-Kang Cheng
Shyi-Ming Pan
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Formosa Epitaxy Inc
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Priority claimed from US14/089,708 external-priority patent/US9368483B2/en
Application filed by Formosa Epitaxy Inc filed Critical Formosa Epitaxy Inc
Publication of TW201508202A publication Critical patent/TW201508202A/en
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Publication of TWI570350B publication Critical patent/TWI570350B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

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Abstract

A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) structures. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

Description

發光裝置 Illuminating device

本發明係提供一種半導體發光元件及相關發光裝置，尤指一種可提供多向性光源的半導體發光元件，及具有半導體發光元件的發光裝置。 The present invention provides a semiconductor light emitting device and related light emitting device, and more particularly to a semiconductor light emitting device that can provide a multidirectional light source, and a light emitting device having the semiconductor light emitting device.

發光二極體(light emitting diode,LED)本身所發出來的光是一種指向性的光源，並非如傳統燈泡為一種發散型的光源。因此，發光二極體在應用上會受到限制。舉例而言，傳統發光二極體在一般室內/室外的照明應用無法或難以達到所需要的映照效果。另外，傳統發光二極體的發光裝置僅可單面發光，具有較低的發光效率。 The light emitted by the light emitting diode (LED) itself is a directional light source, not a divergent light source like a conventional light bulb. Therefore, the LEDs are limited in application. For example, conventional light-emitting diodes are unable or difficult to achieve the desired illuminating effect in general indoor/outdoor lighting applications. In addition, the light-emitting device of the conventional light-emitting diode can emit light only on one side, and has low luminous efficiency.

本發明的其中一個目的在於提供一種可提供多向性光源的半導體發光元件，一種具有前述半導體發光元件的發光裝置，以及一種發光裝置的裝置基座。本發明之目的在於提高發光效率、改善光形及降低成本。 It is an object of the present invention to provide a semiconductor light emitting element which can provide a multidirectional light source, a light emitting device having the foregoing semiconductor light emitting element, and a device base of a light emitting device. The object of the present invention is to improve luminous efficiency, improve light shape, and reduce cost.

本發明之較佳實施例揭露一種半導體發光元件。半導體發光元件包括一透明基板與複數個發光二極體結構。透明基板具有相對設置的一支撐面與一第二主表面。複數個發光二極體結構的至少一部份設置在支撐面，且與未設置發光二極體結構之部分支撐面形成可發光的一第一主表面。每一個發光二極體結構包括一第一電極與一第二電極。至少一個發光二極體結構發出的光線會通過透明基板且從第二主表面出光。 A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate and a plurality of light emitting diode structures. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. At least a portion of the plurality of light emitting diode structures is disposed on the support surface, and forms a first major surface that is illuminable with a portion of the support surface on which the light emitting diode structure is not disposed. Each of the light emitting diode structures includes a first electrode and a second electrode. Light emitted by at least one of the light emitting diode structures passes through the transparent substrate and exits the second major surface.

本發明之較佳實施例揭露一種發光裝置。發光裝置包括至少一半導體發光元件與一承載座。半導體發光元件包括一透明基板與複數個發光二極體結構。透明基板具有相對設置的一支撐面與一第二主表面。複數個發光二極體結構的至少一部份設置在支撐面，且與未設置發光二極體結構之部分支撐面形成可發光的一第一主表面。每一個發光二極體結構包括一第一電極與一第二電極。至少一個發光二極體結構發出的光線會通過透明基板且從第二主表面出光。半導體發光元件設置於承載座，且第一夾角形成於半導體發光元件與承載座之間。 A preferred embodiment of the invention discloses a light emitting device. The light emitting device includes at least one semiconductor light emitting element and a carrier. The semiconductor light emitting device includes a transparent substrate and a plurality of light emitting diode structures. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. At least a portion of the plurality of light emitting diode structures is disposed on the support surface, and forms a first major surface that is illuminable with a portion of the support surface on which the light emitting diode structure is not disposed. Each of the light emitting diode structures includes a first electrode and a second electrode. Light emitted by at least one of the light emitting diode structures passes through the transparent substrate and exits the second major surface. The semiconductor light emitting element is disposed on the carrier, and the first angle is formed between the semiconductor light emitting element and the carrier.

本發明之較佳實施例揭露一種半導體發光元件。半導體發光元件包括一透明基板與至少一發光二極體結構。透明基板具有相對設置的一支撐面與一第二主表面。發光二極體結構設置在支撐面，且與未設置發光二極體結構之部分支撐面形成可發光的一第一主表面。發光二極體結構包括一第一電極與一第二電極。發光二極體結構之出光角度係大於180度，且發光二極體結構所發出之至少部分光線會射入透明基板，並由第二主表面出光。 A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate and at least one light emitting diode structure. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface, and forms a first main surface illuminable with a portion of the support surface not provided with the light emitting diode structure. The light emitting diode structure includes a first electrode and a second electrode. The light-emitting diode structure has a light-emitting angle greater than 180 degrees, and at least part of the light emitted by the light-emitting diode structure is incident on the transparent substrate and is emitted by the second main surface.

本發明之較佳實施例揭露一種半導體發光元件。半導體發光元件包括一透明基板與至少一發光二極體結構。透明基板之材料包括藍寶石基板，且具有相對設置的一支撐面與一第二主表面。發光二極體結構設置在支撐面，其出光角度係大於180度。發光二極體結構所發出之至少部分光線會射入透明基板，並由第二主表面出光。 A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate and at least one light emitting diode structure. The material of the transparent substrate comprises a sapphire substrate and has a supporting surface and a second main surface disposed opposite each other. The light emitting diode structure is disposed on the support surface, and the light exit angle is greater than 180 degrees. At least part of the light emitted by the LED structure is incident on the transparent substrate and is emitted by the second main surface.

本發明之較佳實施例揭露一種半導體發光元件。半導體發光元件包括一透明基板、至少一發光二極體結構與一波長轉換層。透明基板具有相對設置的一支撐面與一第二主表面。發光二極體結構設置在支撐面，且與未設置發光二極體結構之部分支撐面形成可發光的一第一主表面。發光二極體 結構之出光角度係大於180度，且發光二極體結構所發出之至少部分光線會射入透明基板，並由第二主表面出光。波長轉換層至少設置於發光二極體結構或第二主表面。波長轉換層至少部分吸收發光二極體結構所發出之光線，並將其轉換成另一波長之光線。 A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate, at least one light emitting diode structure and a wavelength conversion layer. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface, and forms a first main surface illuminable with a portion of the support surface not provided with the light emitting diode structure. Light-emitting diode The light exiting angle of the structure is greater than 180 degrees, and at least part of the light emitted by the light emitting diode structure is incident on the transparent substrate and is emitted by the second main surface. The wavelength conversion layer is disposed at least on the light emitting diode structure or the second main surface. The wavelength conversion layer at least partially absorbs the light emitted by the light emitting diode structure and converts it into light of another wavelength.

本發明之較佳實施例揭露一種半導體發光元件。半導體發光元件包括一透明基板與複數個發光二極體結構。透明基板具有相對設置的一支撐面與一第二主表面。複數個發光二極體結構設置在支撐面。各發光二極體結構未被透明基板遮蔽的發光面與未設置發光二極體結構之部分支撐面共同形成可發光的第一主表面。複數個發光二極體結構的每一個發光二極體結構之出光角度係大於180度。至少一發光二極體結構所發出之光線會射入透明基板，並由第二主表面出光。第一主表面之面積或第二主表面之面積係為各發光二極體結構3之至少一發光面之總面積的五倍以上。 A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate and a plurality of light emitting diode structures. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. A plurality of light emitting diode structures are disposed on the support surface. The light-emitting surface of each of the light-emitting diode structures not shielded by the transparent substrate and the partial support surface not provided with the light-emitting diode structure together form a first main surface that can emit light. The light-emitting diode structure of each of the plurality of light-emitting diode structures has an exit angle of more than 180 degrees. Light emitted by at least one of the light emitting diode structures is incident on the transparent substrate and is emitted by the second main surface. The area of the first major surface or the area of the second major surface is more than five times the total area of at least one of the light-emitting surfaces of each of the light-emitting diode structures 3.

本發明之較佳實施例揭露一種半導體發光元件。半導體發光元件包括一透明基板、至少一類鑽碳膜與至少一發光二極體結構。透明基板具有相對設置的一支撐面與一第二主表面。類鑽碳膜設置於透明基板。發光二極體結構設置於支撐面。發光二極體結構未被透明基板遮蔽的發光面與未設置發光二極體結構之部分支撐面共同形成可發光的第一主表面。發光二極體結構之出光角度係大於180度，發光二極體結構所發出之部份光線會射入透明基板，並由第二主表面出光。 A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device comprises a transparent substrate, at least one type of drilled carbon film and at least one light emitting diode structure. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The diamond-like carbon film is disposed on a transparent substrate. The light emitting diode structure is disposed on the support surface. The light-emitting surface of the light-emitting diode structure not shielded by the transparent substrate and the partial support surface not provided with the light-emitting diode structure together form a first main surface that can emit light. The light-emitting diode structure has a light-emitting angle greater than 180 degrees, and part of the light emitted by the light-emitting diode structure is incident on the transparent substrate and is emitted by the second main surface.

本發明之較佳實施例揭露一種半導體發光元件。半導體發光元件包括一透明基板、至少一發光二極體結構與一反射鏡。透明基板具有相對設置的一支撐面與一第二主表面。反射鏡設置於第二主表面。發光二極體結構設置於支撐面。發光二極體結構未被透明基板遮蔽的發光面與未設置發光二 極體結構之部分支撐面共同形成可發光的第一主表面。發光二極體結構之出光角度係大於180度。 A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate, at least one light emitting diode structure and a mirror. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The mirror is disposed on the second major surface. The light emitting diode structure is disposed on the support surface. The light emitting surface of the light emitting diode structure is not shielded by the transparent substrate and the light emitting surface is not provided A portion of the support surfaces of the polar body structure together form a first major surface that is illuminable. The light exiting angle of the light emitting diode structure is greater than 180 degrees.

本發明之較佳實施例揭露一種半導體發光元件。半導體發光元件包括一透明基板、至少一發光二極體結構、一第一連接導線與一第二連接導線。透明基板具有相對設置的一支撐面與一第二主表面。發光二極體結構設置於支撐面，且發光二極體結構未被透明基板遮蔽的發光面與未設置發光二極體結構之部分支撐面共同形成可發光的第一主表面。發光二極體結構之出光角度係大於180度。發光二極體結構所發出之部份光線會射入透明基板，並由第二主表面出光。第一連接導線與第二連接導線分別設置於透明基板之不同側。第一連接導線與第二連接導線電連接於發光二極體結構。 A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate, at least one light emitting diode structure, a first connecting wire and a second connecting wire. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface, and the light emitting surface of the light emitting diode structure not shielded by the transparent substrate and the partial supporting surface not provided with the light emitting diode structure form a first main surface that can emit light. The light exiting angle of the light emitting diode structure is greater than 180 degrees. Part of the light emitted by the LED structure is incident on the transparent substrate and is emitted by the second main surface. The first connecting wire and the second connecting wire are respectively disposed on different sides of the transparent substrate. The first connecting wire and the second connecting wire are electrically connected to the light emitting diode structure.

本發明之較佳實施例揭露一種發光裝置。發光裝置包括一半導體發光元件與一支架。半導體發光元件包括一透明基板、至少一發光二極體結構、一第一連接導線與一第二連接導線。透明基板具有相對設置的一支撐面與一第二主表面。發光二極體結構設置在支撐面，且與未設置發光二極體結構之部分支撐面形成可發光的一第一主表面。發光二極體結構之出光角度係大於180度。發光二極體結構所發出之部份光線會射入透明基板，並由第二主表面出光。第一連接導線與第二連接導線分別設置於透明基板之不同側。第一連接導線與第二連接導線電連接於發光二極體結構。支架包括至少一缺口，半導體發光元件之設置對應於缺口。 A preferred embodiment of the invention discloses a light emitting device. The light emitting device includes a semiconductor light emitting element and a bracket. The semiconductor light emitting device includes a transparent substrate, at least one light emitting diode structure, a first connecting wire and a second connecting wire. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface, and forms a first main surface illuminable with a portion of the support surface not provided with the light emitting diode structure. The light exiting angle of the light emitting diode structure is greater than 180 degrees. Part of the light emitted by the LED structure is incident on the transparent substrate and is emitted by the second main surface. The first connecting wire and the second connecting wire are respectively disposed on different sides of the transparent substrate. The first connecting wire and the second connecting wire are electrically connected to the light emitting diode structure. The bracket includes at least one notch, and the arrangement of the semiconductor light emitting elements corresponds to the notch.

本發明之較佳實施例揭露一種發光裝置。發光裝置包括複數個半導體發光元件與一裝置基座。各半導體發光元件包括一透明基板、至少一發光二極體結構、一第一連接導線與一第二連接導線。透明基板具有相對設置的一支撐面與一第二主表面。發光二極體結構設置在支撐面，且與未設置發 光二極體結構之部分支撐面形成可發光的一第一主表面。發光二極體結構之出光角度係大於180度。發光二極體結構所發出之部份光線會射入透明基板，並由第二主表面出光。第一連接導線與第二連接導線分別設置於透明基板之不同側。第一連接導線與第二連接導線電連接於發光二極體結構。裝置基座包括承載座、與延伸自承載座的複數個支架。各支架包括至少一缺口，複數個半導體發光元件之設置對應於複數個缺口的至少一部份。 A preferred embodiment of the invention discloses a light emitting device. The light emitting device includes a plurality of semiconductor light emitting elements and a device base. Each of the semiconductor light emitting elements includes a transparent substrate, at least one light emitting diode structure, a first connecting wire and a second connecting wire. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The LED structure is arranged on the support surface, and the hair is not set A portion of the support surface of the photodiode structure forms a first major surface that is illuminable. The light exiting angle of the light emitting diode structure is greater than 180 degrees. Part of the light emitted by the LED structure is incident on the transparent substrate and is emitted by the second main surface. The first connecting wire and the second connecting wire are respectively disposed on different sides of the transparent substrate. The first connecting wire and the second connecting wire are electrically connected to the light emitting diode structure. The device base includes a carrier and a plurality of brackets extending from the carrier. Each of the brackets includes at least one notch, and the plurality of semiconductor light emitting elements are disposed to correspond to at least a portion of the plurality of notches.

本發明之較佳實施例揭露一種發光裝置。發光裝置包括複數個半導體發光元件與一燈條。各半導體發光元件包括一透明基板、至少一發光二極體結構、一第一連接導線與一第二連接導線。透明基板具有相對設置的一支撐面與一第二主表面。發光二極體結構設置在支撐面，且與未設置發光二極體結構之部分支撐面形成可發光的一第一主表面。發光二極體結構之出光角度係大於180度。發光二極體結構所發出之部份光線會射入透明基板，並由第二主表面出光。第一連接導線與第二連接導線分別設置於透明基板之不同側。第一連接導線與第二連接導線電連接於發光二極體結構。燈條包括複數個缺口。燈條具有一延伸方向，且複數個缺口沿著延伸方向設置。複數個半導體發光元件之設置對應於複數個缺口的至少一部份。 A preferred embodiment of the invention discloses a light emitting device. The light emitting device includes a plurality of semiconductor light emitting elements and a light bar. Each of the semiconductor light emitting elements includes a transparent substrate, at least one light emitting diode structure, a first connecting wire and a second connecting wire. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface, and forms a first main surface illuminable with a portion of the support surface not provided with the light emitting diode structure. The light exiting angle of the light emitting diode structure is greater than 180 degrees. Part of the light emitted by the LED structure is incident on the transparent substrate and is emitted by the second main surface. The first connecting wire and the second connecting wire are respectively disposed on different sides of the transparent substrate. The first connecting wire and the second connecting wire are electrically connected to the light emitting diode structure. The light bar includes a plurality of notches. The light bar has an extending direction, and a plurality of notches are disposed along the extending direction. The plurality of semiconductor light emitting elements are arranged to correspond to at least a portion of the plurality of indentations.

本發明之較佳實施例揭露一種發光裝置。發光裝置包括複數個半導體發光元件與一承載座。各半導體發光元件包括一透明基板、至少一發光二極體結構、一第一連接導線與一第二連接導線。透明基板具有相對設置的一支撐面與一第二主表面。發光二極體結構設置在支撐面，且與未設置發光二極體結構之部分支撐面形成可發光的一第一主表面。發光二極體結構之出光角度係大於180度。發光二極體結構所發出之部份光線會射入透明基板，並由第二主表面出光。第一連接導線與第二連接導線分別設置於透明基板之不同側。第一連接導線與第二連接導線電連接於發光二極體結構。承載座包 括複數個缺口，排列成陣列型態。複數個半導體發光元件之設置對應於複數個缺口的至少一部份。 A preferred embodiment of the invention discloses a light emitting device. The light emitting device includes a plurality of semiconductor light emitting elements and a carrier. Each of the semiconductor light emitting elements includes a transparent substrate, at least one light emitting diode structure, a first connecting wire and a second connecting wire. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface, and forms a first main surface illuminable with a portion of the support surface not provided with the light emitting diode structure. The light exiting angle of the light emitting diode structure is greater than 180 degrees. Part of the light emitted by the LED structure is incident on the transparent substrate and is emitted by the second main surface. The first connecting wire and the second connecting wire are respectively disposed on different sides of the transparent substrate. The first connecting wire and the second connecting wire are electrically connected to the light emitting diode structure. Carrier bag A plurality of notches are arranged and arranged in an array pattern. The plurality of semiconductor light emitting elements are arranged to correspond to at least a portion of the plurality of indentations.

本發明之較佳實施例揭露發光裝置之一裝置基座。裝置基座包括一承載座與複數個支架。各支架延伸於承載座。各支架包括至少一缺口，且複數個電極設置於缺口之兩側。 A preferred embodiment of the present invention discloses a device base for a light emitting device. The base of the device includes a carrier and a plurality of brackets. Each bracket extends to the carrier. Each of the brackets includes at least one notch, and a plurality of electrodes are disposed on both sides of the notch.

於本發明之發光裝置中，發光二極體結構固設於透明基板，且透明基板允許來自發光二極體結構發出之光線通過。因此，本發明之發光裝置可發出多向性光線或全向性光線。發光裝置之發光效率可相應提升，且發光二極體發光裝置的光形也可隨之改善。 In the light-emitting device of the present invention, the light-emitting diode structure is fixed on the transparent substrate, and the transparent substrate allows light emitted from the light-emitting diode structure to pass therethrough. Therefore, the illuminating device of the present invention can emit omnidirectional light or omnidirectional light. The luminous efficiency of the light-emitting device can be correspondingly improved, and the light shape of the light-emitting diode light-emitting device can also be improved.

1、310‧‧‧半導體發光元件 1, 310‧‧‧ semiconductor light-emitting components

1a‧‧‧第一群發光元件 1a‧‧‧First group of light-emitting elements

1b‧‧‧第二群發光元件 1b‧‧‧Second group of light-emitting elements

11、10、10’、50、301、302‧‧‧發光裝置 11, 10, 10', 50, 301, 302‧‧‧ illuminating devices

12M‧‧‧非平面結構 12M‧‧‧ non-planar structure

14‧‧‧發光二極體結構 14‧‧‧Lighting diode structure

141‧‧‧基底 141‧‧‧Base

142‧‧‧N型半導體層 142‧‧‧N type semiconductor layer

143‧‧‧主動層 143‧‧‧ active layer

144‧‧‧P型半導體層 144‧‧‧P type semiconductor layer

18‧‧‧第二連接導線 18‧‧‧Second connecting wire

2‧‧‧透明基板 2‧‧‧Transparent substrate

20‧‧‧第一連接導線 20‧‧‧First connecting wire

22‧‧‧第二連接導線 22‧‧‧Second connecting wire

210‧‧‧支撐面 210‧‧‧Support surface

21A‧‧‧第一主表面 21A‧‧‧ first major surface

21B‧‧‧第二主表面 21B‧‧‧Second major surface

23A‧‧‧連接導線 23A‧‧‧Connecting wires

23B‧‧‧第二連接導線 23B‧‧‧Second connecting wire

25、9‧‧‧類鑽碳膜 25, 9‧‧‧Drilling carbon film

26‧‧‧承載座 26‧‧‧Hosting

28‧‧‧晶片結合層 28‧‧‧ wafer bonding layer

28A‧‧‧第一晶片結合層 28A‧‧‧First wafer bonding layer

28B‧‧‧第二晶片結合層 28B‧‧‧Second wafer bonding layer

3‧‧‧發光二極體結構 3‧‧‧Lighting diode structure

30、32‧‧‧電極 30, 32‧‧‧ electrodes

31A、16‧‧‧第一電極 31A, 16‧‧‧ first electrode

31B、18‧‧‧第二電極 31B, 18‧‧‧ second electrode

311A‧‧‧第一連接電極 311A‧‧‧First connection electrode

311B‧‧‧第二連接電極 311B‧‧‧Second connection electrode

322‧‧‧裝置基座 322‧‧‧Device base

330‧‧‧缺口 330‧‧‧ gap

34‧‧‧發光面 34‧‧‧Lighting surface

341‧‧‧承載座 341‧‧‧ bearing seat

342‧‧‧條狀部 342‧‧‧ Strip

4‧‧‧波長轉換層 4‧‧‧wavelength conversion layer

5、26‧‧‧承載座 5, 26‧‧‧ bearing seat

5a‧‧‧對稱中心 5a‧‧ symmetry center

51、62、321‧‧‧支架 51, 62, 321‧‧‧ bracket

52、63‧‧‧元件接合層 52, 63‧‧‧ component joint layer

6‧‧‧電路基板 6‧‧‧ circuit board

60‧‧‧承載機構 60‧‧‧Loading mechanism

61‧‧‧插槽 61‧‧‧ slots

7‧‧‧燈罩 7‧‧‧shade

8‧‧‧濾光器 8‧‧‧ Filter

θ1‧‧‧第一夾角 Θ1‧‧‧ first angle

V+、V-‧‧‧驅動電壓 V+, V-‧‧‧ drive voltage

L‧‧‧光線 L‧‧‧Light

P‧‧‧電路圖案 P‧‧‧ circuit pattern

H‧‧‧孔洞 H‧‧‧ Hole

G‧‧‧缺口 G‧‧‧ gap

第1圖與第2圖為本發明之一較佳實施例之半導體發光元件的結構示意圖。 1 and 2 are schematic views showing the structure of a semiconductor light emitting element according to a preferred embodiment of the present invention.

第3圖、第4圖與第5圖為本發明之一較佳實施例之不同形式的發光二極體結構3與導線之耦接示意圖。 3, 4, and 5 are schematic diagrams showing the coupling of different forms of the LED structure 3 and the wires according to a preferred embodiment of the present invention.

第6圖與第7圖為本發明之一較佳實施例之波長轉換層之配置示意圖。 6 and 7 are schematic views showing the configuration of a wavelength conversion layer according to a preferred embodiment of the present invention.

第8圖為本發明之另一較佳實施例之半導體發光元件的剖面示意圖。 Figure 8 is a cross-sectional view showing a semiconductor light emitting device according to another preferred embodiment of the present invention.

第9圖為本發明之另一較佳實施例之半導體發光元件的剖面示意圖。 Figure 9 is a cross-sectional view showing a semiconductor light emitting device according to another preferred embodiment of the present invention.

第10圖為本發明之另一較佳實施例之半導體發光元件的立體示意圖。 Figure 10 is a perspective view of a semiconductor light emitting device according to another preferred embodiment of the present invention.

第11圖為本發明之一較佳實施例之承載座之示意圖。 Figure 11 is a schematic view of a carrier of a preferred embodiment of the present invention.

第12圖為本發明之一較佳實施例之電路板之示意圖。 Figure 12 is a schematic view of a circuit board in accordance with a preferred embodiment of the present invention.

第13圖為本發明之一較佳實施例之反射鏡之示意圖。 Figure 13 is a schematic view of a mirror according to a preferred embodiment of the present invention.

第14圖為本發明之一較佳實施例之類鑽碳膜之示意圖。 Figure 14 is a schematic view of a carbon-like carbon film according to a preferred embodiment of the present invention.

第15圖為本發明之另一較佳實施例之發光裝置之示意圖。 Figure 15 is a schematic view of a light-emitting device according to another preferred embodiment of the present invention.

第16圖為本發明之另一較佳實施例之發光裝置之示意圖。 Figure 16 is a schematic view of a light-emitting device according to another preferred embodiment of the present invention.

第17圖為本發明之另一較佳實施例之發光裝置之示意圖。 Figure 17 is a schematic view of a light-emitting device according to another preferred embodiment of the present invention.

第18圖、第19圖與第20圖為本發明之一較佳實施例之透明基板插接或黏接於承載座之示意圖。 18, 19, and 20 are schematic views showing the transparent substrate being inserted or bonded to the carrier according to a preferred embodiment of the present invention.

第21圖與第22圖為本發明之一較佳實施例之透明基板黏接於具支架的承載座之示意圖。 21 and 22 are schematic views showing a transparent substrate adhered to a carrier having a holder according to a preferred embodiment of the present invention.

第23圖為本發明之另一較佳實施例之發光裝置之示意圖。 Figure 23 is a schematic view of a light-emitting device according to another preferred embodiment of the present invention.

第24圖為本發明之另一較佳實施例之發光裝置之裝置基座之示意圖。 Figure 24 is a schematic view showing the base of the apparatus of the light-emitting device according to another preferred embodiment of the present invention.

第25圖為本發明之另一較佳實施例之發光裝置的立體示意圖。 Figure 25 is a perspective view of a light-emitting device according to another preferred embodiment of the present invention.

第26圖、第27圖、第28圖與第29圖為本發明之一較佳實施例之透明基板以點對稱或線對稱形式設置於承載機構之示意圖。 26, 27, 28, and 29 are schematic views showing a transparent substrate disposed in a bearing mechanism in a point symmetrical or line symmetrical form according to a preferred embodiment of the present invention.

第30圖為本發明之另一較佳實施例之發光裝置之示意圖。 Figure 30 is a schematic view of a light-emitting device according to another preferred embodiment of the present invention.

第31圖與第32圖為本發明之一較佳實施例之燈罩之示意圖。 31 and 32 are schematic views of a lampshade according to a preferred embodiment of the present invention.

第33圖為本發明第一實施例之發光裝置之示意圖。 Figure 33 is a schematic view showing a light-emitting device according to a first embodiment of the present invention.

第34圖為第33圖所示之發光裝置之照度圖。 Fig. 34 is an illuminance diagram of the light-emitting device shown in Fig. 33.

第35圖為本發明第二實施例之發光裝置之部分示意圖。 Figure 35 is a partial schematic view showing a light-emitting device according to a second embodiment of the present invention.

第36圖為本發明第二實施例之發光裝置之側視圖。 Figure 36 is a side view of a light-emitting device according to a second embodiment of the present invention.

第37圖為第35圖與第36圖所示之發光裝置之照度圖。 Fig. 37 is an illuminance diagram of the light-emitting device shown in Figs. 35 and 36.

第38圖與第39圖分別為本發明實施例之不同類型的發光裝置之部分示意圖。 38 and 39 are respectively partial schematic views of different types of light-emitting devices according to an embodiment of the present invention.

第40圖為本發明較佳實施例的其中一個發光裝置之照度圖。 Figure 40 is a illuminance diagram of one of the light-emitting devices of the preferred embodiment of the present invention.

請參考第1圖與第2圖，第1圖與第2圖為本發明之一較佳實施例之半導體發光元件的結構示意圖。如第1圖與第2圖所示，半導體發光元件1係包括：一透明基板2；一支撐面210；一第一主表面21A；一第二主表面21B以及至少一發光二極體結構3。平板或薄片狀的透明基板2本身具有兩個主要表面，其中之一係為支撐面210，具有發光功能的發光二極體結構3 可設置於此支撐面210之上。發光二極體結構3未被透明基板2遮蔽的一發光面34與未設置發光二極體結構3之部分支撐面210共同形成可發光的第一主表面21A。透明基板2未設有發光二極體結構3的另一主要表面則為第二主表面21B。前述佈置方式反之亦可，且亦可於透明基板2兩個面均設置發光二極體結構3。在本發明之一實施例中，發光二極體結構3可設置於透明基板2之支撐面210，並與設置於第二主表面21B之其它發光二極體結構3相應交錯，使透明基板2的各面上的發光二極體結構3發光時，光線不被透明基板2另一面上的其它發光二極體結構3遮蔽，如此可相應增加半導體發光元件1之發光強度。透明基板2如藍寶石基板、陶瓷基板、玻璃基板、塑膠或橡膠基板等等的材質可包括選自於氧化鋁(Al2O3)、氧化鎂、氧化鈹、氧化釔、氧化釷、氧化鋯、鋯鈦酸鉛鑭、砷化鎵、硫化鋅、硒化鋅、氟化鈣、氟化鎂、碳化矽(SiC)或化學聚合物等的材料，其中，本發明較佳實施例之一係採用藍寶石基板作為透明基板2，因為藍寶石基板大體上為單晶結構，不但具有較好的透光率，且散熱能力佳，可延長半導體發光元件1的壽命。然而，使用傳統藍寶石基板於本發明中會有易碎裂的問題，故本發明經實驗驗證，本發明之透明基板2較佳係選用厚度大於或等於200微米(um)的藍寶石基板，如此可達成較佳的可靠度，並有較佳的承載以及透光功能。為了使半導體發光元件1有效地發出多向性光線，例如雙向性或全向性光線，本發明之半導體發光元件1至少有一發光二極體結構3較佳可選用出光角度大於180度者。相應地，設置於透明基板2上的發光二極體結構3可從發光面34發出往遠離透明基板2方向行進的光線，發光二極體結構3亦會發出至少部分進入透明基板2之光線。而進入透明基板2之光線除可從透明基板2的第二主表面21B出光外，亦可從未設置發光二極體結構3之部分支撐面210與基板2的其他表面出光。半導體發光元件1可以至少雙面出光、多方向出光或全方向出光。於本發明中，第一主表面21A之面積或第二主表面21B之面積係為設置於其表面上的所有發光二極體結構3之一發光面34之總和面積的五倍 以上，此係兼顧到發光效率以及散熱等條件而為較佳的配置比例。 Please refer to FIG. 1 and FIG. 2, and FIG. 1 and FIG. 2 are schematic diagrams showing the structure of a semiconductor light emitting device according to a preferred embodiment of the present invention. As shown in FIGS. 1 and 2, the semiconductor light emitting device 1 includes: a transparent substrate 2; a support surface 210; a first main surface 21A; a second main surface 21B; and at least one light emitting diode structure 3. . The flat or sheet-like transparent substrate 2 itself has two main surfaces, one of which is a support surface 210, and a light-emitting diode structure 3 having a light-emitting function can be disposed on the support surface 210. The light-emitting surface 34 of the light-emitting diode structure 3 that is not shielded by the transparent substrate 2 and the partial support surface 210 where the light-emitting diode structure 3 is not provided together form a first main surface 21A that can emit light. The other main surface of the transparent substrate 2 not provided with the light emitting diode structure 3 is the second main surface 21B. The foregoing arrangement may be reversed, and the light emitting diode structure 3 may be disposed on both sides of the transparent substrate 2. In an embodiment of the present invention, the LED structure 3 can be disposed on the support surface 210 of the transparent substrate 2 and interlaced with the other LED structures 3 disposed on the second main surface 21B to make the transparent substrate 2 When the light-emitting diode structure 3 on each surface emits light, the light is not blocked by the other light-emitting diode structure 3 on the other surface of the transparent substrate 2, so that the light-emitting intensity of the semiconductor light-emitting element 1 can be increased accordingly. The material of the transparent substrate 2 such as a sapphire substrate, a ceramic substrate, a glass substrate, a plastic or rubber substrate, or the like may be selected from the group consisting of alumina (Al 2 O 3 ), magnesium oxide, cerium oxide, cerium oxide, cerium oxide, zirconium oxide, a material such as lead zirconate titanate, gallium arsenide, zinc sulfide, zinc selenide, calcium fluoride, magnesium fluoride, tantalum carbide (SiC) or a chemical polymer, wherein one of the preferred embodiments of the present invention is The sapphire substrate serves as the transparent substrate 2. Since the sapphire substrate is substantially a single crystal structure, not only has a good light transmittance, but also has a good heat dissipation capability, and the life of the semiconductor light emitting element 1 can be extended. However, the use of a conventional sapphire substrate may cause fragility in the present invention. Therefore, the present invention has been experimentally verified that the transparent substrate 2 of the present invention is preferably a sapphire substrate having a thickness greater than or equal to 200 micrometers (um). Achieve better reliability, and have better load bearing and light transmission functions. In order to enable the semiconductor light-emitting element 1 to efficiently emit multi-directional light, such as bidirectional or omnidirectional light, the semiconductor light-emitting element 1 of the present invention has at least one light-emitting diode structure 3 preferably having a light-emitting angle of more than 180 degrees. Correspondingly, the light emitting diode structure 3 disposed on the transparent substrate 2 can emit light from the light emitting surface 34 toward the transparent substrate 2, and the light emitting diode structure 3 also emits light at least partially entering the transparent substrate 2. The light entering the transparent substrate 2 can be emitted from the second main surface 21B of the transparent substrate 2, or the support surface 210 of the light-emitting diode structure 3 and the other surfaces of the substrate 2 can be emitted. The semiconductor light emitting element 1 can emit light at least on both sides, emit light in multiple directions, or emit light in all directions. In the present invention, the area of the first major surface 21A or the area of the second major surface 21B is more than five times the sum total area of one of the light-emitting surfaces 34 of all the light-emitting diode structures 3 disposed on the surface thereof. A preferable arrangement ratio is achieved in consideration of conditions such as luminous efficiency and heat dissipation.

另外，本發明之另一較佳實施例是半導體發光元件1之第一主表面21A與第二主表面21B發出之色溫差異等於或小於1500K，使半導體發光元件1有更全面一致之發光效果。尤其，當透明基板2之厚度如前所述，並使用出光之波長範圍在大於或等於420奈米，且/或小於或等於470奈米的發光二極體結構3時，透明基板2之光穿透率可大於或等於70%。 In addition, another preferred embodiment of the present invention is such that the difference in color temperature between the first main surface 21A and the second main surface 21B of the semiconductor light emitting element 1 is equal to or less than 1500 K, so that the semiconductor light emitting element 1 has a more uniform illumination effect. In particular, when the thickness of the transparent substrate 2 is as described above, and the light-emitting diode structure 3 having a wavelength range of greater than or equal to 420 nm and/or less than or equal to 470 nm is used, the light of the transparent substrate 2 is used. The penetration rate can be greater than or equal to 70%.

本發明並不以上述實施例為限。下文將依序介紹本發明之其它較佳實施例，且為了便於比較各實施例之相異處並簡化說明，在下文之各實施例中使用相同的符號標注相同的元件，且主要針對各實施例之相異處進行說明，而不再對重覆部分進行贅述。 The present invention is not limited to the above embodiments. Other preferred embodiments of the present invention will be described in the following, and in order to facilitate the comparison of the various embodiments and the simplification of the description, the same elements are denoted by the same symbols in the following embodiments, and mainly for each implementation. The differences between the examples are explained, and the repeated parts are not described again.

請參考第3圖、第4圖與第5圖，本發明為了獲得供電以進行發光，發光二極體結構3包括第一電極31A與第二電極31B。第一電極31A與第二電極31B分別與透明基板2上之第一連接導線23A及第二連接導線23B電性連接。其中，第3圖、第4圖與第5圖分別揭示了不同形式的發光二極體結構3與導線之耦接方式。第3圖係為橫式發光二極體結構，其發光二極體結構3係形成於透明基板2之支撐面210上，第一電極31A與第二電極31B係以打線方式分別電性耦接於第一連接導線23A與第二連接導線23B。第4圖係為覆晶式發光二極體結構3，係將橫式發光二極體結構3倒置並藉第一電極31A與第二電極31B使發光二極體結構3與透明基板2耦接。第一電極31A與第二電極31B係以焊接或黏接方式分別電性耦接於第一連接導線23A與第二連接導線23B。如第5圖所示，第一電極31A與第二電極31B設置於發光二極體結構3之不同面，發光二極體結構3以直立方式設置，使第一電極31A與第二電極31B可以焊接或黏接方式分別與第一連接導線23A以及第 二連接導線23B相連接。 Referring to FIG. 3, FIG. 4 and FIG. 5, in order to obtain power for light emission, the light emitting diode structure 3 includes a first electrode 31A and a second electrode 31B. The first electrode 31A and the second electrode 31B are electrically connected to the first connecting wire 23A and the second connecting wire 23B on the transparent substrate 2, respectively. Among them, the third figure, the fourth figure and the fifth figure respectively disclose the coupling manner of the different forms of the light emitting diode structure 3 and the wires. 3 is a horizontal light emitting diode structure, and the light emitting diode structure 3 is formed on the supporting surface 210 of the transparent substrate 2, and the first electrode 31A and the second electrode 31B are electrically coupled by wire bonding. The first connecting wire 23A and the second connecting wire 23B. 4 is a flip-chip light-emitting diode structure 3 in which the horizontal light-emitting diode structure 3 is inverted and the light-emitting diode structure 3 is coupled to the transparent substrate 2 by the first electrode 31A and the second electrode 31B. . The first electrode 31A and the second electrode 31B are electrically coupled to the first connecting wire 23A and the second connecting wire 23B, respectively, by soldering or bonding. As shown in FIG. 5, the first electrode 31A and the second electrode 31B are disposed on different faces of the light emitting diode structure 3, and the light emitting diode structure 3 is disposed in an upright manner, so that the first electrode 31A and the second electrode 31B can be Soldering or bonding method with the first connecting wire 23A and the first The two connecting wires 23B are connected.

請參考第6圖與第7圖，本發明之半導體發光元件1可更包括一波長轉換層4，其係選擇性設置於第一主表面21A或/與第二主表面21B之上，或是直接設置於發光二極體結構3上。波長轉換層4可直接接觸發光二極體結構3，或是與發光二極體結構3相鄰一段距離而不直接接觸。波長轉換層4係含有至少一種螢光粉，例如石榴石系、硫酸鹽系或矽酸鹽系等等無機或有機材質之螢光粉。波長轉換層4用以將至少部份發光二極體結構3發出光線轉換為另一種波長範圍的光線。例如，當發光二極體結構3發出藍光，波長轉換層4可轉換部分藍光為黃光，而使半導體發光元件1在藍光與黃光混合之下最後發出白光。另外，因第一主表面21A的光源主要來自發光二極體結構3直接發出的光線，而第二主表面21B之光源是來自發光二極體結構3的光線穿過透明基板2發出的光，故第一主表面21A之光線強度(照度)會不同於第二主表面21B之光線強度(照度)。因此，本發明之另一較佳實施例之半導體發光元件1，第一主表面21A與第二主表面21B上的波長轉換層4之螢光粉含量係相應配置。較佳來說，在第一主表面21A的波長轉換層4之螢光粉含量相對於在第二主表面21B的波長轉換層4之螢光粉含量的比例範圍較佳的可從1比0.5至1比3，或是在第二主表面21B的波長轉換層4之螢光粉含量相對於在第一主表面21A的波長轉換層4之螢光粉含量的比例範圍較佳的可從1比0.5至1比3。如此，本發明之半導體發光元件1的照度或光形可以符合不同的應用需求，且半導體發光元件1之第一主表面21A與第二主表面21B發出之色溫差異可控制在等於或小於1500K，以提升半導體發光元件1之波長轉換效率與發光效果。 Referring to FIGS. 6 and 7, the semiconductor light emitting device 1 of the present invention may further include a wavelength conversion layer 4 selectively disposed on the first main surface 21A or/and the second main surface 21B, or It is directly disposed on the light emitting diode structure 3. The wavelength conversion layer 4 can directly contact the light emitting diode structure 3 or be adjacent to the light emitting diode structure 3 at a distance without direct contact. The wavelength conversion layer 4 contains at least one kind of phosphor powder, such as garnet, sulfate or citrate, etc., inorganic or organic phosphor powder. The wavelength conversion layer 4 is configured to convert at least part of the light emitting diode structure 3 into light of another wavelength range. For example, when the light emitting diode structure 3 emits blue light, the wavelength conversion layer 4 can convert part of the blue light to yellow light, and the semiconductor light emitting element 1 finally emits white light under the mixture of blue light and yellow light. In addition, since the light source of the first main surface 21A mainly comes from the light directly emitted by the light emitting diode structure 3, and the light source of the second main surface 21B is the light emitted from the light emitting diode structure 3 through the transparent substrate 2, Therefore, the light intensity (illuminance) of the first main surface 21A is different from the light intensity (illuminance) of the second main surface 21B. Therefore, in the semiconductor light emitting element 1 of another preferred embodiment of the present invention, the phosphor content of the wavelength conversion layer 4 on the first main surface 21A and the second main surface 21B is correspondingly arranged. Preferably, the ratio of the phosphor content of the wavelength conversion layer 4 on the first major surface 21A to the phosphor powder content of the wavelength conversion layer 4 on the second major surface 21B is preferably from 1 to 0.5. Preferably, from 1 to 3, or the ratio of the phosphor content of the wavelength conversion layer 4 on the second major surface 21B to the phosphor content of the wavelength conversion layer 4 on the first major surface 21A is preferably from 1 More than 0.5 to 1 to 3. Thus, the illuminance or light shape of the semiconductor light-emitting element 1 of the present invention can meet different application requirements, and the difference in color temperature between the first main surface 21A and the second main surface 21B of the semiconductor light-emitting element 1 can be controlled to be equal to or less than 1500K. The wavelength conversion efficiency and the light-emitting effect of the semiconductor light-emitting element 1 are improved.

請參考第8圖。第8圖繪示了本發明之另一較佳實施例之半導體發光元件的剖面示意圖。如第8圖所示，本實施例之半導體發光元件1包括 一透明基板2、與提供多向性出光功能的至少一發光二極體結構14。透明基板2具有彼此相對設置的一支撐面210與一第二主表面21B。發光二極體結構14設置於透明基板2之支撐面210上。發光二極體結構14包括一第一電極16與一第二電極18，以電性連接其它裝置。發光二極體結構14未被透明基板2遮蔽的一發光面34、與未設置發光二極體結構14之部分支撐面210共同形成一第一主表面21A。 Please refer to Figure 8. Figure 8 is a cross-sectional view showing a semiconductor light emitting device according to another preferred embodiment of the present invention. As shown in FIG. 8, the semiconductor light emitting element 1 of the present embodiment includes A transparent substrate 2 and at least one light emitting diode structure 14 providing a omnidirectional light emitting function. The transparent substrate 2 has a support surface 210 and a second main surface 21B disposed opposite to each other. The light emitting diode structure 14 is disposed on the support surface 210 of the transparent substrate 2. The LED structure 14 includes a first electrode 16 and a second electrode 18 for electrically connecting other devices. A light-emitting surface 34 of the light-emitting diode structure 14 that is not shielded by the transparent substrate 2 and a partial support surface 210 that is not provided with the light-emitting diode structure 14 form a first main surface 21A.

發光二極體結構14可包括一基底141、一N型半導體層142、一主動層143與一P型半導體層144。在此實施例中，發光二極體結構14的基底141可藉晶片結合層28與透明基板2耦接。出光亮度可因為晶片結合層28的材料特性最佳化而提高。舉例來說，晶片結合層28的反射率較佳地介於基底141的反射率和透明基板2的反射率之間，藉以增加發光二極體結構14的出光亮度。此外，晶片結合層28可為透明黏膠或其它適合的結合材料。第一電極16與第二電極18設置在發光二極體結構14的另一側與晶片結合層28相對。第一電極16與第二電極18分別電連接P型半導體層144與N型半導體層142(第二電極18和N型半導體層142的連接關係未示於第8圖)。第一電極16之上表面與第二電極18之上表面的水平標準係實質相同。第一電極16與第二電極18可為金屬電極，然不限於此。此外，半導體發光元件1還包括第一連接導線20、第二連接導線22以及一波長轉換層4。第一連接導線20與第二連接導線22設置在透明基板2。第一連接導線20與第二連接導線22可為金屬導線或其它導電圖案，但不限於此。第一電極16與第二電極18以打線或焊接方式分別連接到第一連接導線20與第二連接導線22，但不限於此。波長轉換層4設置在透明基板2上並覆蓋發光二極體結構14。此外，波長轉換層4亦可設置於透明基板2的第二主表面21B上。 The LED structure 14 can include a substrate 141, an N-type semiconductor layer 142, an active layer 143, and a P-type semiconductor layer 144. In this embodiment, the substrate 141 of the LED structure 14 can be coupled to the transparent substrate 2 by the wafer bonding layer 28. The light exiting brightness can be improved by optimizing the material properties of the wafer bonding layer 28. For example, the reflectivity of the wafer bonding layer 28 is preferably between the reflectivity of the substrate 141 and the reflectivity of the transparent substrate 2, thereby increasing the light exiting brightness of the light emitting diode structure 14. Additionally, the wafer bonding layer 28 can be a transparent adhesive or other suitable bonding material. The first electrode 16 and the second electrode 18 are disposed on the other side of the light emitting diode structure 14 opposite to the wafer bonding layer 28. The first electrode 16 and the second electrode 18 are electrically connected to the P-type semiconductor layer 144 and the N-type semiconductor layer 142, respectively (the connection relationship between the second electrode 18 and the N-type semiconductor layer 142 is not shown in FIG. 8). The horizontal standard of the upper surface of the first electrode 16 and the upper surface of the second electrode 18 is substantially the same. The first electrode 16 and the second electrode 18 may be metal electrodes, but are not limited thereto. Further, the semiconductor light emitting element 1 further includes a first connecting wire 20, a second connecting wire 22, and a wavelength conversion layer 4. The first connecting wire 20 and the second connecting wire 22 are disposed on the transparent substrate 2. The first connecting wire 20 and the second connecting wire 22 may be metal wires or other conductive patterns, but are not limited thereto. The first electrode 16 and the second electrode 18 are respectively connected to the first connecting wire 20 and the second connecting wire 22 by wire bonding or soldering, but are not limited thereto. The wavelength conversion layer 4 is disposed on the transparent substrate 2 and covers the light emitting diode structure 14. Further, the wavelength conversion layer 4 may also be disposed on the second main surface 21B of the transparent substrate 2.

除此之外，在此實施例中為了增加光線從透明基板2離開之出光 量並使出光的分布均勻，透明基板2之表面還可選擇性地設置非平面結構12M。非平面結構12M可為各式凸出或凹陷的幾何結構，例如金字塔、圓錐體、半球體或三角柱等，並可為規則性排列或隨機性排列。再者，透明基板2之表面也可選擇性設置一類鑽碳(diamond-like carbon,DLC)膜25以增加導熱及散熱效果。 In addition, in this embodiment, in order to increase the light exiting the transparent substrate 2, the light is emitted. The amount and the distribution of the light are made uniform, and the surface of the transparent substrate 2 can also be selectively provided with the non-planar structure 12M. The non-planar structure 12M may be a variety of convex or concave geometric structures, such as pyramids, cones, hemispheres, or triangular columns, and may be arranged in a regular or random manner. Furthermore, a diamond-like carbon (DLC) film 25 may be selectively disposed on the surface of the transparent substrate 2 to increase heat conduction and heat dissipation.

請參考第9圖，第9圖繪示了本發明之另一較佳變化實施例之半導體發光元件的示意圖。相較於第8圖所示之實施例，在本實施例的半導體發光元件1中，第一電極16、第二電極18與第一晶片結合層28A設置於發光二極體結構14的相同面。第一電極16與第二電極18利用覆晶方式電連接於第一連接導線20與第二連接導線22。其中，第一連接導線20與第二連接導線22可分別從相應的第一電極16與第二電極18的位置延伸生成。第一電極16與第二電極18可藉由一第二晶片結合層28B分別電連接於第一連接導線20與第二連接導線22。第二晶片結合層28B可為導電凸塊，例如金質凸塊或銲料凸塊，也可為導電膠，例如銀膠，亦可為共熔合金層，例如金錫(Au-Sn)合金層或低熔點(In-Bi-Sn)合金層，然不限於此。在此實施例中，第一晶片結合層28A可為空缺或包含波長轉換層4。 Please refer to FIG. 9. FIG. 9 is a schematic diagram showing a semiconductor light emitting device according to another preferred embodiment of the present invention. In the semiconductor light emitting element 1 of the present embodiment, the first electrode 16, the second electrode 18 and the first wafer bonding layer 28A are disposed on the same side of the light emitting diode structure 14 as compared with the embodiment shown in FIG. . The first electrode 16 and the second electrode 18 are electrically connected to the first connecting wire 20 and the second connecting wire 22 by flip chip bonding. The first connecting wire 20 and the second connecting wire 22 can be respectively generated from the positions of the corresponding first electrode 16 and the second electrode 18. The first electrode 16 and the second electrode 18 can be electrically connected to the first connecting wire 20 and the second connecting wire 22 respectively by a second wafer bonding layer 28B. The second wafer bonding layer 28B may be a conductive bump, such as a gold bump or a solder bump, or a conductive paste, such as a silver paste, or a eutectic alloy layer, such as a gold-tin (Au-Sn) alloy layer. Or a low melting point (In-Bi-Sn) alloy layer, but is not limited thereto. In this embodiment, the first wafer bonding layer 28A can be vacant or include the wavelength conversion layer 4.

請參考第10圖，第10圖繪示了本發明之另一較佳實施例之半導體發光元件的立體示意圖。如第10圖所示，本發明之半導體發光元件310包括透明基板2、至少一發光二極體結構3、一第一連接電極311A、一第二連接電極311B與至少一波長轉換層4。發光二極體結構3係設置於透明基板2之支撐面210上，且形成可發光之一第一主表面21A。在此實施例中，發光二極體結構3之一出光角度係大於180度，且發光二極體結構3所發出之至少部分光線會射入透明基板2，而射入光線的至少一部分會從對應第一主表面21A之一第二主表面21B出光，且射入光線的其餘部分從透明基板2的其 他表面出光，進而達到半導體發光元件310的多向性出光的發光效果。第一連接電極311A以及第二連接電極311B係分別設置於透明基板2的不同側或相同側(未示於第10圖)。第一連接電極311A與第二連接電極311B可分別為透明基板2上之半導體發光元件310之一第一連接導線與一第二連接導線所延伸的晶片對外電極，故第一連接電極311A與第二連接電極311B係相應地電性連接於發光二極體結構3。波長轉換層4係至少覆蓋發光二極體結構3、並暴露至少部分的第一連接電極311A與第二連接電極311B。波長轉換層4係至少部分吸收發光二極體結構3及/或透明基板2所發出之光線，並轉換成另一波長範圍之光線，然後與未被波長轉換層4吸收之光線混光，以增加半導體發光元件310的發光波長範圍，改善半導體發光元件310的發光效果。由於本實施例之半導體發光元件310具有分別設置於透明基板2的第一連接電極311A與第二連接電極311B，傳統的發光二極體封裝製程可省略，半導體發光元件310可獨自完成製作後再與適合之承載座進行結合，因此可達到提升整體製造良率、簡化結構以及增加所配合之承載座設計變化等優點。 Please refer to FIG. 10, which is a perspective view of a semiconductor light emitting device according to another preferred embodiment of the present invention. As shown in FIG. 10, the semiconductor light emitting device 310 of the present invention comprises a transparent substrate 2, at least one light emitting diode structure 3, a first connection electrode 311A, a second connection electrode 311B and at least one wavelength conversion layer 4. The light emitting diode structure 3 is disposed on the support surface 210 of the transparent substrate 2, and forms one of the first main surfaces 21A that can emit light. In this embodiment, one of the light emitting diode structures 3 has an exit angle greater than 180 degrees, and at least a portion of the light emitted by the LED structure 3 is incident on the transparent substrate 2, and at least a portion of the incident light is emitted from Corresponding to the second main surface 21B of one of the first major surfaces 21A, and emitting the rest of the light from the transparent substrate 2 The surface of the semiconductor light-emitting element 310 emits light. The first connection electrode 311A and the second connection electrode 311B are respectively disposed on different sides or the same side of the transparent substrate 2 (not shown in FIG. 10). The first connecting electrode 311A and the second connecting electrode 311B are respectively a first connecting wire of the semiconductor light emitting element 310 on the transparent substrate 2 and a wafer external electrode extended by a second connecting wire, so the first connecting electrode 311A and the first connecting electrode The two connection electrodes 311B are electrically connected to the light emitting diode structure 3 correspondingly. The wavelength conversion layer 4 covers at least the light emitting diode structure 3 and exposes at least a portion of the first connection electrode 311A and the second connection electrode 311B. The wavelength conversion layer 4 at least partially absorbs the light emitted by the light emitting diode structure 3 and/or the transparent substrate 2, and converts it into light of another wavelength range, and then mixes the light that is not absorbed by the wavelength conversion layer 4 to The light-emitting wavelength range of the semiconductor light-emitting element 310 is increased to improve the light-emitting effect of the semiconductor light-emitting element 310. Since the semiconductor light emitting element 310 of the present embodiment has the first connection electrode 311A and the second connection electrode 311B respectively disposed on the transparent substrate 2, the conventional light emitting diode package process can be omitted, and the semiconductor light emitting element 310 can be fabricated separately. Combined with a suitable carrier, it can achieve the advantages of improved overall manufacturing yield, simplified structure and increased design of the mating seat.

請參考第11圖，本發明之一實施例係使用至少一前述半導體發光元件之發光裝置11。發光裝置11包括一承載座5與前述的半導體發光元件。半導體發光元件之透明基板2除可平放於此承載座5，亦可立設於其上並耦接於此承載座5。透明基板2與承載座5之間具有一第一夾角θ1，第一夾角θ1可為固定或根據發光裝置的光形需要而變動。第一夾角θ1的範圍較佳地係介於30度至150度之間。 Referring to Fig. 11, an embodiment of the present invention uses a light-emitting device 11 of at least one of the foregoing semiconductor light-emitting elements. The light-emitting device 11 includes a carrier 5 and the aforementioned semiconductor light-emitting element. The transparent substrate 2 of the semiconductor light-emitting device can be placed on the carrier 5 and can be erected thereon and coupled to the carrier 5 . The transparent substrate 2 and the carrier 5 have a first angle θ1, and the first angle θ1 can be fixed or varied according to the light shape of the light-emitting device. The range of the first angle θ1 is preferably between 30 degrees and 150 degrees.

請參考第12圖，本發明之發光裝置11的承載座5還可包括一電路板6，其係耦接於外部電源。電路板6並電性耦接於透明基板2上的第一連接導線以及第二連接導線(未示於第12圖)，而與發光二極體結構3電性連接，使外部電源透過電路板6供應發光二極體結構3發光所需電源。在本 發明之其它較佳實施例中，若無設置此電路板6，發光二極體結構3亦可透過第一連接導線以及第二連接導線(未示於第12圖)直接電性連接於承載座5，使外部電源可經由承載座5對發光二極體結構3供電。 Referring to FIG. 12, the carrier 5 of the illumination device 11 of the present invention may further include a circuit board 6 coupled to an external power source. The circuit board 6 is electrically coupled to the first connecting wire and the second connecting wire (not shown in FIG. 12) on the transparent substrate 2, and is electrically connected to the LED structure 3, so that the external power source is transmitted through the circuit board. 6 supplies the light source required for the light emitting diode structure 3 to emit light. In this In other preferred embodiments of the present invention, if the circuit board 6 is not provided, the LED structure 3 can be directly electrically connected to the carrier through the first connecting wire and the second connecting wire (not shown in FIG. 12). 5. The external power source can supply power to the LED structure 3 via the carrier 5.

請參考第13圖，本發明之發光裝置11還可包括一反射鏡或一濾光器8，設置於透明基板2的第二主表面21B或支撐面210。反射鏡或濾光器8可反射該發光二極體結構3所發出的至少部分穿透該透明基板2的光線，而使部份被反射光線改由該第一主表面21A射出。反射鏡8可包括至少一金屬層或一布拉格反射鏡(Bragg reflector)，但不以此為限。布拉格反射鏡可由多層具有不同折射率的介電薄膜所堆疊而構成，或是由多層具有不同折射率的介電薄膜與多層金屬氧化物所堆疊而構成。 Referring to FIG. 13, the light-emitting device 11 of the present invention may further include a mirror or a filter 8 disposed on the second main surface 21B or the support surface 210 of the transparent substrate 2. The mirror or filter 8 reflects the light emitted by the LED structure 3 at least partially through the transparent substrate 2, so that a portion of the reflected light is emitted from the first main surface 21A. The mirror 8 may include at least one metal layer or a Bragg reflector, but is not limited thereto. The Bragg mirror may be formed by stacking a plurality of dielectric films having different refractive indices, or by stacking a plurality of dielectric films having different refractive indices and a plurality of metal oxides.

請參考第14圖，本發明之發光裝置11還可包括一類鑽碳(diamond-like carbon,DLC)膜9，其中類鑽碳膜9係設置於透明基板2之支撐面210及/或第二主表面21B上，以增加導熱及散熱效果。 Referring to FIG. 14, the light-emitting device 11 of the present invention may further comprise a diamond-like carbon (DLC) film 9 in which the diamond-like carbon film 9 is disposed on the support surface 210 of the transparent substrate 2 and/or the second. The main surface 21B is added to increase heat conduction and heat dissipation.

請參考第15圖。第15圖繪示了本發明之另一較佳實施例之發光裝置之示意圖。如第15圖所示，本實施例之發光裝置10包括一承載座26與至少一前述的半導體發光元件。半導體發光元件包括透明基板2與至少一發光二極體結構14。半導體發光元件可部份嵌入承載座26內。承載座26之電極30、32電性連接半導體發光元件的連接導線20、22。一電源可透過電極30、32相應地提供驅動電壓V+,V-以驅動發光二極體結構14發出光線L。發光二極體結構14包括一第一電極16與一第二電極18，以打線方式分別電連接第一連接導線20與第二連接導線22，然不限於此。另外，發光二極體結構14之出光角係大於180度或具有多個發光面，使得發光裝置10可從第一主表面21A及第二主表面21B出光。再者，因部分光線亦會由發光二極體結 構14及/或透明基板2的四個側壁所射出，發光裝置10可相應具有多面發光、六面發光或全方向出光的特性。 Please refer to Figure 15. Figure 15 is a schematic view showing a light-emitting device according to another preferred embodiment of the present invention. As shown in Fig. 15, the light-emitting device 10 of the present embodiment includes a carrier 26 and at least one of the aforementioned semiconductor light-emitting elements. The semiconductor light emitting element includes a transparent substrate 2 and at least one light emitting diode structure 14. The semiconductor light emitting element can be partially embedded in the carrier 26. The electrodes 30, 32 of the carrier 26 are electrically connected to the connecting leads 20, 22 of the semiconductor light emitting element. A power supply can provide a driving voltage V+, V- through the electrodes 30, 32 to drive the LED structure 14 to emit light L. The light emitting diode structure 14 includes a first electrode 16 and a second electrode 18, and electrically connects the first connecting wire 20 and the second connecting wire 22 respectively in a wire bonding manner, but is not limited thereto. In addition, the light-emitting diode structure 14 has an exit angle of more than 180 degrees or has a plurality of light-emitting surfaces, so that the light-emitting device 10 can emit light from the first main surface 21A and the second main surface 21B. Furthermore, because some of the light will also be emitted by the LED junction The four sidewalls of the structure 14 and/or the transparent substrate 2 are emitted, and the light-emitting device 10 can have characteristics of multi-face illumination, six-sided illumination or omnidirectional illumination.

半導體發光元件更包括波長轉換層4，選擇性設置於發光二極體結構14、第一主表面21A或第二主表面21B上。波長轉換層4可吸收發光二極體結構14所發出之至少部份光線並轉換為另一波長範圍的光，以使發光裝置10發出特定光色或波長範圍較大的光線。舉例來說，當發光二極體結構14產生藍光，部分的藍光在照射到波長轉換層4後可轉換成為黃光，而發光裝置10即可發出由藍光與黃光混合成的白光。此外，透明基板2可以平行方式或非平行方式直接地或非直接固定在承載座26。舉例來說，藉由將透明基板2之一側壁固定在承載座26，透明基板2可直立地固設於承載座26、或是透明基板2可水平設置於承載座26，然不限於此。透明基板2較佳包括高熱傳導係數的材料，且發光二極體結構14產生之熱量可經由透明基板2相應地散逸到承載座26，因此高功率的發光二極體結構可應用在本發明之發光裝置。另外，在本發明之較佳實施例中之一，在同樣功率條件下，本發明的發光裝置的透明基板12上形成多個較小功率的發光二極體結構，以充分利用透明基板12的熱傳導特性，例如本實施例之各發光二極體結構14之功率可等於或小於0.2瓦特，但不以此為限。 The semiconductor light emitting element further includes a wavelength conversion layer 4 selectively disposed on the light emitting diode structure 14, the first main surface 21A or the second main surface 21B. The wavelength conversion layer 4 can absorb at least a portion of the light emitted by the LED structure 14 and convert it into light of another wavelength range to cause the illumination device 10 to emit light of a particular color or wavelength range. For example, when the light emitting diode structure 14 generates blue light, part of the blue light can be converted into yellow light after being irradiated to the wavelength conversion layer 4, and the light emitting device 10 can emit white light mixed by blue light and yellow light. Further, the transparent substrate 2 may be directly or indirectly fixed to the carrier 26 in a parallel manner or in a non-parallel manner. For example, by fixing one side wall of the transparent substrate 2 to the carrier 26, the transparent substrate 2 can be fixed upright on the carrier 26, or the transparent substrate 2 can be horizontally disposed on the carrier 26, but is not limited thereto. The transparent substrate 2 preferably includes a material having a high thermal conductivity, and the heat generated by the LED structure 14 can be correspondingly dissipated to the carrier 26 via the transparent substrate 2, so that a high-power LED structure can be applied to the present invention. Light emitting device. In addition, in one of the preferred embodiments of the present invention, a plurality of smaller power LED structures are formed on the transparent substrate 12 of the light-emitting device of the present invention under the same power conditions to fully utilize the transparent substrate 12. The heat transfer characteristics, for example, the power of each of the light emitting diode structures 14 of the present embodiment may be equal to or less than 0.2 watts, but not limited thereto.

請參考第16圖。第16圖繪示了本發明之另一較佳實施例之發光裝置之示意圖。相比於第15圖所示的發光裝置，本實施例的發光裝置10’包括複數個發光二極體結構14，且至少一部份的發光二極體結構14以串聯方式彼此電性連接。各發光二極體結構14包括第一電極16與第二電極18。其中一個發光二極體結構14的第一電極16係設置在串聯之一外端並電性連接於第一連接導線20，且另一個發光二極體結構14的第二電極18係設置在串聯之另一端並電性連接於第二連接導線22，然不限於此。複數個發光二極體 結構14可以串聯或並聯方式彼此電性連接。複數個發光二極體結構14可發出相同色光，例如都是藍光二極體；或是複數個發光二極體結構14分別發出不同色光，以符合不同應用需求。本發明之發光裝置10’還可藉由波長轉換層4發出更多種不同的色光。 Please refer to Figure 16. Figure 16 is a schematic view showing a light-emitting device according to another preferred embodiment of the present invention. Compared with the light-emitting device shown in Fig. 15, the light-emitting device 10' of the present embodiment includes a plurality of light-emitting diode structures 14, and at least a portion of the light-emitting diode structures 14 are electrically connected to each other in series. Each of the light emitting diode structures 14 includes a first electrode 16 and a second electrode 18. The first electrode 16 of one of the light emitting diode structures 14 is disposed at one outer end of the series and electrically connected to the first connecting wire 20, and the second electrode 18 of the other light emitting diode structure 14 is disposed in series. The other end is electrically connected to the second connecting wire 22, but is not limited thereto. Multiple LEDs The structures 14 can be electrically connected to one another in series or in parallel. The plurality of light emitting diode structures 14 can emit the same color light, for example, all of the blue light diodes; or the plurality of light emitting diode structures 14 respectively emit different colors of light to meet different application requirements. The illuminating device 10' of the present invention can also emit a greater variety of chromatic colors by the wavelength converting layer 4.

請參考第17圖。第17圖繪示了本發明之另一較佳實施例之發光裝置之示意圖。相比於第15圖與第16圖所示的發光裝置，本實施例之發光裝置50可更包括一支架51，用以連結半導體發光元件與承載座26。半導體發光元件之透明基板2係藉由一元件接合層52固定於支架51之一側，而支架51之另一側可嵌設於或***承載座26。另外，支架51具有彈性而可在透明基板2與承載座26之間形成一夾角，且夾角介於30-150度之間。支架51的材料可包括選自於鋁、銅、複合式金屬、電線、陶瓷、印刷電路板或其他適合的材料。 Please refer to Figure 17. Figure 17 is a schematic view showing a light-emitting device according to another preferred embodiment of the present invention. The light-emitting device 50 of the present embodiment further includes a bracket 51 for connecting the semiconductor light-emitting element and the carrier 26 to the light-emitting device shown in FIGS. 15 and 16. The transparent substrate 2 of the semiconductor light emitting element is fixed to one side of the holder 51 by a component bonding layer 52, and the other side of the holder 51 can be embedded or inserted into the carrier 26. In addition, the bracket 51 has elasticity to form an angle between the transparent substrate 2 and the carrier 26, and the included angle is between 30 and 150 degrees. The material of the bracket 51 may include a material selected from the group consisting of aluminum, copper, composite metal, wire, ceramic, printed circuit board, or other suitable material.

請參考第18圖、第19圖與第20圖，當本發明中的透明基板2設置於承載座5之上時，較佳實施例之一可透過插接或是黏接的方式來達成透明基板2與承載座5的接合。 Referring to FIG. 18, FIG. 19 and FIG. 20, when the transparent substrate 2 of the present invention is disposed on the carrier 5, one of the preferred embodiments can be transparent by plugging or bonding. The substrate 2 is bonded to the carrier 5.

如第18圖所示，當透明基板2設置於承載座5之上時，透明基板2係插接於承載座5的單一插槽61，而使半導體發光元件透過連接導線電性耦接於插槽61。透明基板2上的發光二極體結構(未示於第18圖)係透過承載座5電性耦接於電源，且透明基板2上的至少部份導電圖案或連接導線延伸連接至透明基板2的邊緣，並整合為具有複數個導電觸片的金手指結構或電性連接埠，例如電性連接埠可為前述的連接電極311A和連接電極311B(未示於第18圖)。當透明基板2插接於插槽61，發光二極體結構(未示於第18圖)可藉由承載座5獲得供電，且透明基板2可相應固定於承載座5的插槽61。 As shown in FIG. 18, when the transparent substrate 2 is disposed on the carrier 5, the transparent substrate 2 is inserted into the single slot 61 of the carrier 5, and the semiconductor light emitting component is electrically coupled to the connector through the connecting wire. Slot 61. The light emitting diode structure (not shown in FIG. 18 ) on the transparent substrate 2 is electrically coupled to the power source through the carrier 5 , and at least a portion of the conductive pattern or the connecting wire on the transparent substrate 2 is extended and connected to the transparent substrate 2 . The edge is integrated into a gold finger structure or an electrical connection port having a plurality of conductive contacts. For example, the electrical connection port may be the aforementioned connection electrode 311A and connection electrode 311B (not shown in FIG. 18). When the transparent substrate 2 is inserted into the slot 61, the light emitting diode structure (not shown in FIG. 18) can be powered by the carrier 5, and the transparent substrate 2 can be correspondingly fixed to the slot 61 of the carrier 5.

請參考第19圖，第19圖為透明基板2插接於承載座5之複數個插槽之結構示意圖。在此實施例中，透明基板2具有一雙插腳結構，其中一個插腳為半導體發光元件的晶片正極，另一個插腳則為半導體發光元件的晶片負極。兩個插腳皆具有至少一導電觸片以分別作為連接埠。對應地，在承載座5則具有與插腳***面尺寸相符的至少兩個插槽61，使得透明基板2可順利接合於承載座5，並讓發光二極體結構獲得供電。 Please refer to FIG. 19 , which is a structural diagram of a plurality of slots in which the transparent substrate 2 is inserted into the carrier 5 . In this embodiment, the transparent substrate 2 has a double pin structure in which one pin is the positive electrode of the semiconductor light emitting element and the other pin is the negative electrode of the semiconductor light emitting element. Both pins have at least one conductive contact to serve as a connection port, respectively. Correspondingly, the carrier 5 has at least two slots 61 corresponding to the size of the pin insertion surface, so that the transparent substrate 2 can be smoothly joined to the carrier 5 and the light emitting diode structure can be powered.

請參考第20圖。透明基板2藉由元件接合層接合於承載座5。在接合的過程中，可以透過金、錫、銦、鉍、銀等金屬材料做焊接輔助而接合透明基板2與承載座5。或者，還可使用具導電性的矽膠或是環氧樹脂輔助固定透明基板2於承載座5上，使半導體發光元件之導電圖案或連接導線可透過元件接合層相應地電性連接於承載座。 Please refer to Figure 20. The transparent substrate 2 is bonded to the carrier 5 by an element bonding layer. In the process of bonding, the transparent substrate 2 and the carrier 5 can be bonded by soldering with a metal material such as gold, tin, indium, antimony or silver. Alternatively, the conductive substrate or the epoxy resin may be used to fix the transparent substrate 2 on the carrier 5 so that the conductive pattern or the connecting wire of the semiconductor light-emitting device can be electrically connected to the carrier through the component bonding layer.

請參考第21圖與第22圖。本實施例之發光裝置11之承載座5可為一基板，基板材料可包括選自鋁、銅、含有鋁的複合金屬、電線、陶瓷或印刷電路板等。承載座5的表面或是側邊具有至少一支架62。支架62為與承載座5可為相互分離的兩機構件，或是一體化之機構件。半導體發光元件可透過黏接的方式與支架62相耦接，也就是藉由元件接合層63將透明基板2固定於承載座5。承載座5與透明基板2之間具有如前述之第一夾角θ1。承載座5無支架的表面亦可設置半導體發光元件，以提昇發光裝置11之發光效果。另外，半導體發光元件亦可透過插接方式連接支架62(未示於第21圖與第22圖)，也就是藉由連接器結合半導體發光元件與支架(及/或支架與承載座)，以將透明基板2固定於承載座5。因為承載座5與支架62是可彎折機構件，因此增加了本發明在應用時的靈活性；同時亦可透過使用不同發光波長之半導體發光元件組合出不同光色，使發光裝置11出光具有變化性以滿足不 同需求。 Please refer to Figure 21 and Figure 22. The carrier 5 of the light-emitting device 11 of the present embodiment may be a substrate, and the substrate material may include a composite metal selected from the group consisting of aluminum, copper, aluminum, a wire, a ceramic or a printed circuit board. The surface or side of the carrier 5 has at least one bracket 62. The bracket 62 is a two-unit member that can be separated from the carrier 5, or an integrated machine member. The semiconductor light emitting device can be coupled to the bracket 62 by means of bonding, that is, the transparent substrate 2 is fixed to the carrier 5 by the component bonding layer 63. The carrier 5 and the transparent substrate 2 have a first included angle θ1 as described above. The surface of the carrier 5 without the support may also be provided with a semiconductor light-emitting element to enhance the light-emitting effect of the light-emitting device 11. In addition, the semiconductor light-emitting element can also be connected to the bracket 62 through a plug-in method (not shown in FIGS. 21 and 22), that is, the semiconductor light-emitting element and the bracket (and/or the bracket and the carrier) are coupled by a connector. The transparent substrate 2 is fixed to the carrier 5. Since the carrier 5 and the bracket 62 are bendable members, the flexibility of the present invention in application is increased. At the same time, different light colors can be combined by using semiconductor light-emitting elements of different light-emitting wavelengths to cause the light-emitting device 11 to emit light. Variability to meet Same needs.

請參考第23圖。如第23圖所示，本實施例之發光裝置包括至少一半導體發光元件1及一承載座5。承載座5包括至少一支架62以及至少一電路圖案P。半導體發光元件1之透明基板之一端與支架62相耦接，以避免或減少支架62對半導體發光元件1出光的遮蔽效果。承載座5的材料可包括選自鋁、銅、含鋁複合式金屬、電線、陶瓷或印刷電路板等材料。支架62係自承載座5之一部分加以切割並彎折一角度(如第21圖與第22圖所示之第一夾角θ1)而成。電路圖案P係設置於承載座5上，電路圖案P並具有至少一組電性端點以電性連接一電源。電路圖案P另有一部分延伸於支架62上以電性連接半導體發光元件1，使半導體發光元件1可透過承載座5之電路圖案P電性連接於電源。此外，承載座5可更包括至少一孔洞H或至少一缺口G，使固定件如螺絲、釘子或插銷等等可透過該孔洞H或缺口G將承載座5與其他組件依發光裝置應用情形作進一步構裝或安裝。同時，孔洞H或缺口G的設置亦增加承載座5之散熱面積，提昇發光裝置之散熱效果。 Please refer to Figure 23. As shown in FIG. 23, the light-emitting device of this embodiment includes at least one semiconductor light-emitting element 1 and a carrier 5. The carrier 5 includes at least one bracket 62 and at least one circuit pattern P. One end of the transparent substrate of the semiconductor light emitting element 1 is coupled to the bracket 62 to avoid or reduce the shielding effect of the bracket 62 on the light emitted from the semiconductor light emitting element 1. The material of the carrier 5 may include materials selected from the group consisting of aluminum, copper, aluminum-containing composite metals, wires, ceramics, or printed circuit boards. The bracket 62 is formed by cutting a portion of the carrier 5 and bending it at an angle (such as the first angle θ1 shown in Figs. 21 and 22). The circuit pattern P is disposed on the carrier 5, and the circuit pattern P has at least one set of electrical terminals to electrically connect a power source. The circuit pattern P further extends on the bracket 62 to electrically connect the semiconductor light emitting element 1 to electrically connect the semiconductor light emitting element 1 to the power supply through the circuit pattern P of the carrier 5. In addition, the carrier 5 can further include at least one hole H or at least one notch G, such that a fixing member such as a screw, a nail or a pin can pass the hole H or the notch G to the carrier 5 and other components according to the application situation of the illuminating device. Further construction or installation. At the same time, the arrangement of the hole H or the notch G also increases the heat dissipation area of the carrier 5, thereby improving the heat dissipation effect of the light-emitting device.

請參考第24圖。第24圖繪示了本發明之另一較佳實施例之發光裝置之裝置基座的立體示意圖。如第24圖所示，本實施例之裝置基座322包括一承載座5以及至少一支架62。相較於第23圖之實施例，本實施例之支架62包括至少一條狀部342與一缺口330。電極30、32係分別設置於缺口330的兩側，條狀部342至少構成缺口330的一邊牆。本發明的半導體發光元件係對應缺口330與支架62耦接。半導體發光元件的連接導線係電性連接於電極30、32，使半導體發光元件可透過支架62及承載座5上的電路圖案與一電源電性耦接而被驅動。缺口330的尺寸可不小於半導體發光元件之一主要發光面，使半導體發光元件的出光不會被支架62遮蔽。支架62與承載座5之間的連接處可為一可活動設計，使支架62與承載座5之間夾角可視需 要進行調整。 Please refer to Figure 24. Figure 24 is a perspective view showing the base of the device of the light-emitting device according to another preferred embodiment of the present invention. As shown in FIG. 24, the device base 322 of the present embodiment includes a carrier 5 and at least one bracket 62. Compared with the embodiment of FIG. 23, the bracket 62 of the embodiment includes at least one strip portion 342 and a notch 330. The electrodes 30 and 32 are respectively disposed on both sides of the notch 330, and the strip portion 342 constitutes at least one side wall of the notch 330. The semiconductor light emitting device of the present invention is coupled to the bracket 62 corresponding to the notch 330. The connecting wires of the semiconductor light emitting element are electrically connected to the electrodes 30 and 32, so that the semiconductor light emitting element can be driven by the circuit pattern on the holder 62 and the carrier 5 to be electrically coupled to a power source. The size of the notch 330 may be not less than one of the main light-emitting surfaces of the semiconductor light-emitting element, so that the light emitted from the semiconductor light-emitting element is not shielded by the holder 62. The connection between the bracket 62 and the carrier 5 can be a movable design, so that the angle between the bracket 62 and the carrier 5 can be visually required. To make adjustments.

請參考第24圖與第25圖。第25圖繪示了本發明之另一較佳實施例之發光裝置的立體示意圖。相比於第24圖之實施例，第25圖所示之發光裝置302更包括具有複數個缺口330的至少一支架62。複數個缺口330係分別設置於支架62的兩相對邊，且條狀部342至少構成各缺口330的一邊牆。複數個半導體發光元件310係與複數個缺口330對應設置，且各半導體發光元件310之電路圖案或連接電極(未示於第25圖)係分別與電極30以及電極32對應設置並電性連結。本實施例之發光裝置302更進一步可包括複數個支架62，支架62設置於半導體發光元件1與承載座5之間。支架62之長度可實質介於5.8-20微米(um)。每個設置有半導體發光元件之支架62與承載座5之間的夾角可視需要各自進行調整。換句話說，承載座5與至少一個支架62之間的夾角可不同於承載座5與其它個支架62之間的夾角，以達到所需之發光效果，但並不以此為限。另外，亦可在相同支架或不同支架設置具有不同發光波長範圍之半導體發光元件的組合，使發光裝置之色彩效果更豐富。 Please refer to Figure 24 and Figure 25. Figure 25 is a perspective view showing a light-emitting device according to another preferred embodiment of the present invention. In contrast to the embodiment of FIG. 24, the illumination device 302 shown in FIG. 25 further includes at least one bracket 62 having a plurality of notches 330. A plurality of notches 330 are respectively disposed on opposite sides of the bracket 62, and the strip portions 342 constitute at least one side wall of each of the notches 330. A plurality of semiconductor light-emitting elements 310 are provided corresponding to a plurality of notches 330, and a circuit pattern or a connection electrode (not shown in FIG. 25) of each of the semiconductor light-emitting elements 310 is electrically connected to the electrodes 30 and 32, respectively. The illuminating device 302 of the embodiment further includes a plurality of brackets 62 disposed between the semiconductor light emitting element 1 and the carrier 5. The length of the stent 62 can be substantially between 5.8 and 20 microns (um). The angle between each of the brackets 62 provided with the semiconductor light-emitting elements and the carrier 5 can be adjusted individually as needed. In other words, the angle between the carrier 5 and the at least one bracket 62 may be different from the angle between the carrier 5 and the other brackets 62 to achieve the desired illumination effect, but not limited thereto. In addition, a combination of semiconductor light-emitting elements having different light-emitting wavelength ranges may be provided in the same bracket or different brackets to make the color effect of the light-emitting device more abundant.

為了提高亮度與改善發光效果，本發明之另一較佳實施例的發光裝置係將複數個具有透明基板的半導體發光元件同時佈置於諸如前述實施例之承載座或其他承載機構之上，此時可採點對稱或線對稱排列方式佈置，即多個具有透明基板的半導體發光元件以點對稱或線對稱的形式設置於承載機構之上。請參考第26圖、第27圖、第28圖與第29圖的發光裝置11俯視圖，各實施例之發光裝置11係在各種不同形狀的承載機構60上設置複數個半導體發光元件，並且以點對稱或線對稱的形式配置，使本發明之發光裝置11的出光能夠均勻(發光二極體結構省略示意)。發光裝置11的出光效果還可藉由改變上述之第一夾角的大小而再做進一步的調整與改善。如第26圖所示，半導體發光元件之間係以點對稱方式夾90度角排列，此時從發光裝置11的四 面中的任一面往發光裝置11看均正對至少二個半導體發光元件。如第27圖所示，發光裝置11的半導體發光元件之間夾角係小於90度。如第28圖所示，發光裝置11的半導體發光元件係延承載機構60的邊緣設置。如第29圖所示，發光裝置的半導體發光元件之間夾角係大於90度。在本發明之另一較佳實施例(未示於圖中)，多個半導體發光元件可以非對稱佈置方式，且多個半導體發光元件的至少一部分會集中或分散設置，以達成發光裝置11於不同應用時的光形需要。 In order to improve the brightness and improve the light-emitting effect, the light-emitting device of another preferred embodiment of the present invention simultaneously arranges a plurality of semiconductor light-emitting elements having a transparent substrate on a carrier or other supporting mechanism such as the foregoing embodiment. Arranged in a point symmetrical or line symmetrical arrangement, that is, a plurality of semiconductor light emitting elements having a transparent substrate are disposed on the carrier mechanism in a point symmetrical or line symmetrical manner. Referring to the top view of the light-emitting device 11 of FIGS. 26, 27, 28, and 29, the light-emitting device 11 of each embodiment is provided with a plurality of semiconductor light-emitting elements on various different shapes of the load-bearing mechanism 60, and The arrangement of the symmetry or the line symmetry makes the light emission of the light-emitting device 11 of the present invention uniform (the light-emitting diode structure is omitted). The light-emitting effect of the light-emitting device 11 can be further adjusted and improved by changing the size of the first angle described above. As shown in Fig. 26, the semiconductor light-emitting elements are arranged at a 90-degree angle in a point-symmetric manner, at this time, from the light-emitting device 11 Either of the faces faces the light-emitting device 11 and faces at least two of the semiconductor light-emitting elements. As shown in Fig. 27, the angle between the semiconductor light-emitting elements of the light-emitting device 11 is less than 90 degrees. As shown in Fig. 28, the semiconductor light emitting element of the light-emitting device 11 is disposed at the edge of the carrying mechanism 60. As shown in Fig. 29, the angle between the semiconductor light-emitting elements of the light-emitting device is greater than 90 degrees. In another preferred embodiment of the present invention (not shown), the plurality of semiconductor light emitting elements may be arranged in an asymmetric manner, and at least a portion of the plurality of semiconductor light emitting elements may be concentrated or dispersed to achieve the light emitting device 11 Light shape needs for different applications.

請參考第30圖。第30圖繪示了本發明之另一較佳實施例之發光裝置的剖面示意圖。如第30圖所示，發光裝置301包括一半導體發光元件310以及一支架321。支架321包括一缺口330，且半導體發光元件310係與缺口330對應設置。本實施例中，支架321之外部亦可當作插腳或彎折成表面焊接所需接墊，以固定或/及電性連接於其他電路元件。半導體發光元件310之一發光面係設置於缺口330內，不論支架321是否為透光材料，發光裝置301皆可保有多面或六面發光的發光效果。 Please refer to Figure 30. Figure 30 is a cross-sectional view showing a light-emitting device according to another preferred embodiment of the present invention. As shown in FIG. 30, the light-emitting device 301 includes a semiconductor light-emitting element 310 and a holder 321 . The bracket 321 includes a notch 330, and the semiconductor light emitting element 310 is disposed corresponding to the notch 330. In this embodiment, the outer portion of the bracket 321 can also be used as a pin or bent into a pad for surface soldering to be fixedly and/or electrically connected to other circuit components. One of the light-emitting surfaces of the semiconductor light-emitting element 310 is disposed in the notch 330. The light-emitting device 301 can maintain the multi-faceted or six-sided light-emitting effect regardless of whether the support 321 is a light-transmitting material.

請參考第31圖，為本發明具體實施例之一發光裝置。發光裝置包括一管形燈罩7、至少一半導體發光元件1以及一承載機構60。半導體發光元件1設置於承載機構60上，且至少一部分的半導體發光元件1位於管形燈罩7所形成之空間內。請再參考第32圖的剖面示意。當多個半導體發光元件1設置於燈罩7之內時，各半導體發光元件1的第一主表面21A之間是以不互相平行的方式分開排列。另外，多個半導體發光元件1的至少一部分會設置於燈罩7所形成之空間內，且不緊貼燈罩7的內壁。較佳的實施例為，半導體發光元件1與燈罩7之間的距離D可相等或大於500微米(μm)；但亦可以灌膠方式形成燈罩7，並使燈罩7至少部分包覆並直接接觸於半導體發光元件1。 Please refer to FIG. 31, which is a light-emitting device according to an embodiment of the present invention. The illuminating device comprises a tubular lampshade 7, at least one semiconductor illuminating component 1 and a carrier mechanism 60. The semiconductor light emitting element 1 is disposed on the carrier mechanism 60, and at least a portion of the semiconductor light emitting element 1 is located in a space formed by the tubular lampshade 7. Please refer to the cross-sectional illustration of Figure 32 again. When the plurality of semiconductor light emitting elements 1 are disposed within the globe 7, the first main surfaces 21A of the respective semiconductor light emitting elements 1 are arranged apart from each other in a manner that is not parallel to each other. Further, at least a part of the plurality of semiconductor light-emitting elements 1 is disposed in the space formed by the globe 7 and does not abut against the inner wall of the globe 7. In a preferred embodiment, the distance D between the semiconductor light-emitting element 1 and the lamp cover 7 can be equal to or greater than 500 micrometers (μm); however, the lamp cover 7 can also be formed by potting, and the lamp cover 7 is at least partially covered and directly contacted. The semiconductor light emitting element 1 is used.

請參閱第23圖與第33圖，第33圖為本發明另一實施例之發光裝置11之示意圖。第23圖與第33圖之實施例的差別之一在於第33圖實施例的半導體發光元件1數量為3個，且半導體發光元件1環繞設置於承載座5的對稱中心。複數個發光元件1的任一個發光元件1可包括至少一主發光面，其係面朝承載座5的對稱中心。在本發明的數個實施例中，具有至少一個主發光面面朝承載座5對稱中心的半導體發光元件1之數量可至少為兩個。對應的半導體發光元件1與承載座5之間至少存在一個第一夾角θ1，且第一夾角θ1之範圍實質介於30-150度。本實施例之發光裝置11還可包括一燭型燈罩7，完整覆蓋半導體發光元件1、支架62與承載座5。由於當第一夾角θ1的角度等於或接近90度時，發光裝置11可能因而產生不均勻的光線，故在其它實施例中，第一夾角θ1的角度較佳可等於或接近60度或80度，此角度可隨著半導體發光元件1與燈罩7之間距改變而相應變化。本實施例之發光裝置11的照度圖請參閱第34圖。 Referring to FIG. 23 and FIG. 33, FIG. 33 is a schematic diagram of a light-emitting device 11 according to another embodiment of the present invention. One of the differences between the 23rd and 33rd embodiments is that the number of the semiconductor light-emitting elements 1 of the 33rd embodiment is three, and the semiconductor light-emitting element 1 is disposed around the center of symmetry of the carrier 5. Any one of the plurality of light-emitting elements 1 may include at least one main light-emitting surface that faces the center of symmetry of the carrier 5. In several embodiments of the invention, the number of semiconductor light-emitting elements 1 having at least one main light-emitting surface facing the center of symmetry of the carrier 5 may be at least two. There is at least one first angle θ1 between the corresponding semiconductor light emitting element 1 and the carrier 5, and the range of the first angle θ1 is substantially between 30 and 150 degrees. The light-emitting device 11 of the present embodiment may further include a candle-shaped lamp cover 7 that completely covers the semiconductor light-emitting element 1, the bracket 62 and the carrier 5. Since the light-emitting device 11 may thus generate uneven light when the angle of the first angle θ1 is equal to or close to 90 degrees, in other embodiments, the angle of the first angle θ1 may preferably be equal to or close to 60 degrees or 80 degrees. This angle may vary correspondingly as the distance between the semiconductor light emitting element 1 and the lamp cover 7 changes. For the illuminance diagram of the illuminating device 11 of the present embodiment, please refer to Fig. 34.

因為如第33圖與第34圖所示之上述實施例中的發光裝置11的光分佈不夠均勻，本發明更進一步提出具較佳改善方案的實施例。請參閱第35圖與第36圖。第35圖為本發明另一實施例之發光裝置11之部分示意圖，第36圖為發光裝置11的相應側視圖。本實施例之發光裝置11可包括至少二支架62與至少二半導體發光元件1。兩個支架62相對於承載座5轉折且未朝向承載座5的對稱中心5a。兩個半導體發光元件1分別設置在對應的支架62上且在對稱中心5a周圍。發光元件1之主發光面可不面朝承載座5的對稱中心5a。承載座5可為星形或輪形。承載座5可包括至少二鰭片，且支架62可從鰭片的一側延伸。如此，設置於這些支架62上的多個半導體發光元件1可作更緊密的排列，發光裝置11的出光強度可被增強，而此也是本發明的優點之一。本實施例之發光裝置11可更包括一燭型燈罩7，完整覆蓋半導體發 光元件1、支架62與承載座5。以本實施例為例，當半導體發光元件1之數量為三個，燈罩7的高度可等於或相近於51.39毫米，燈罩7的底部內徑可等於或相近於34.92毫米，支架62與承載座5之對稱中心5a的間距可介於2-3毫米，且支架62的長度可介於5-15毫米。如上述，一較佳實施例係將第一夾角θ1較佳地定為等於或相近於80度，以及將支架62的長度較佳地定為等於或相近於13.6毫米。如第37圖之照度圖所示，此較佳實施例之發光裝置11的光線分佈相比第33圖與第34圖之前述實施例更為均勻。本實施例之每一個半導體發光元件1所發出光線可補償陰影區塊，且光線會均勻地分佈在燈罩7的所有區域內而不會有暗區。本發明再提出另一種可達到前述照明效果的較佳實施例，其係將第一夾角θ1較佳地定為等於或相近於80度，將支架62的長度較佳地定為等於或相近於15毫米，以及將支架62與承載座5之對稱中心5a的間距較佳地定為等於或相近於2毫米。 Since the light distribution of the light-emitting device 11 in the above embodiment as shown in Figs. 33 and 34 is not uniform enough, the present invention further proposes an embodiment with a preferred improvement. Please refer to Figure 35 and Figure 36. Fig. 35 is a partial schematic view showing a light-emitting device 11 according to another embodiment of the present invention, and Fig. 36 is a corresponding side view of the light-emitting device 11. The light-emitting device 11 of the present embodiment may include at least two brackets 62 and at least two semiconductor light-emitting elements 1. The two brackets 62 are turned relative to the carrier 5 and are not facing the center of symmetry 5a of the carrier 5. The two semiconductor light emitting elements 1 are respectively disposed on the corresponding brackets 62 and around the center of symmetry 5a. The main light-emitting surface of the light-emitting element 1 may not face the center of symmetry 5a of the carrier 5. The carrier 5 can be star-shaped or wheel-shaped. The carrier 5 can include at least two fins, and the bracket 62 can extend from one side of the fin. Thus, the plurality of semiconductor light-emitting elements 1 disposed on the holders 62 can be arranged more closely, and the light-emitting intensity of the light-emitting device 11 can be enhanced, which is one of the advantages of the present invention. The light-emitting device 11 of the embodiment may further comprise a candle-shaped lamp cover 7 for completely covering the semiconductor hair The optical element 1, the bracket 62 and the carrier 5 are provided. Taking the embodiment as an example, when the number of the semiconductor light-emitting elements 1 is three, the height of the lamp cover 7 can be equal to or close to 51.39 mm, and the bottom inner diameter of the lamp cover 7 can be equal to or close to 34.92 mm, the bracket 62 and the carrier 5 The pitch of the symmetrical center 5a may be between 2-3 mm, and the length of the bracket 62 may be between 5-15 mm. As described above, a preferred embodiment sets the first included angle θ1 to be equal to or nearly 80 degrees, and preferably sets the length of the bracket 62 equal to or close to 13.6 mm. As shown in the illuminance diagram of Fig. 37, the light distribution of the light-emitting device 11 of the preferred embodiment is more uniform than the foregoing embodiments of Figs. 33 and 34. The light emitted by each of the semiconductor light-emitting elements 1 of the present embodiment compensates for the shadow blocks, and the light is evenly distributed in all areas of the globe 7 without dark areas. The present invention further proposes another preferred embodiment that achieves the aforementioned illumination effect. The first angle θ1 is preferably set equal to or close to 80 degrees, and the length of the bracket 62 is preferably equal to or close to 15 mm, and the spacing between the bracket 62 and the center of symmetry 5a of the carrier 5 is preferably set equal to or close to 2 mm.

在本發明之其中一個實施例中，發光裝置11可包括至少二個設置於承載座5的半導體發光元件1，其中至少一個半導體發光元件1的主發光面不會面朝承載座5的對稱中心。發光裝置11的多個半導體發光元件1的其中至少之一還可進一步包括面朝承載座5之對稱中心的至少一個主發光面。如此一來，不同半導體發光元件1所輸出的光線可投射且通過周圍的燈罩7，並補償本發明之發光裝置11在出光時的陰影。然而在其它不同應用態樣中，至少兩個半導體發光元件1還可選擇性以平行方式或非平行方式排列。 In one embodiment of the invention, the illumination device 11 can comprise at least two semiconductor light-emitting elements 1 arranged on the carrier 5, wherein the main illumination surface of the at least one semiconductor illumination element 1 does not face the center of symmetry of the carrier 5. . At least one of the plurality of semiconductor light emitting elements 1 of the light emitting device 11 may further include at least one main light emitting surface facing the center of symmetry of the carrier 5. As a result, the light output from the different semiconductor light-emitting elements 1 can be projected and passed through the surrounding lampshade 7, and compensates for the shadow of the light-emitting device 11 of the present invention when it is emitted. However, in other different application aspects, the at least two semiconductor light-emitting elements 1 can also be selectively arranged in a parallel manner or in a non-parallel manner.

除了前述幾個實施例之外，本發明另提出其它用以均勻發光裝置11發光的數個實施例。請參閱第38圖至第40圖。第38圖與第39圖分別為根據本發明實施例之不同類型發光裝置11之部分的示意圖。第40圖為以下詳細說明中較佳實施例的其中之一個發光裝置11之照度圖。如第25圖、第38圖或第39圖所示之發光裝置11可包括具有第一群支架62與第二群支架 62的承載座5，以及具有第一群發光元件1a及第二群發光元件1b的半導體發光元件1。第一群發光元件1a及第二群發光元件1b分別對應設置在第一群支架62與第二群支架62。第一群支架62與第二群支架62可交錯排列於承載座5。第一群支架62之數量可相同或相異於第二群支架62之數量。承載座5可具有對稱中心。如第25圖或第38圖所示，在可均勻本發明發光裝置11出光的一實施例中，第一群發光元件1a與承載座5之間的第一夾角θ1可不同於第二群發光元件1b與承載座5之間的第一夾角θ1。在可均勻本發明發光裝置11出光的另一實施例中，第一群支架62的長度可不同於第二群支架62的長度，以第38圖或第39圖所示為例，第一群支架62比第二群支架62高，使第一群發光元件1a之高度可不同於第二群發光元件1b之高度。在可均勻本發明發光裝置11出光的又一實施例中，第一群支架62與對稱中心間之距離可不同於第二群支架62與對稱中心間之距離，舉例來說，如第39圖所示，第一群支架62與對稱中心間之距離可大於第二群支架62與對稱中心間之距離。 In addition to the foregoing several embodiments, the present invention further proposes several other embodiments for illuminating the uniform illumination device 11. Please refer to Figures 38 to 40. Figures 38 and 39 are schematic views, respectively, of portions of different types of illumination devices 11 in accordance with an embodiment of the present invention. Figure 40 is a illuminance diagram of one of the light-emitting devices 11 of the preferred embodiment in the following detailed description. The light-emitting device 11 as shown in FIG. 25, FIG. 38 or FIG. 39 may include a first group bracket 62 and a second group bracket The carrier 5 of 62 and the semiconductor light emitting element 1 having the first group of light-emitting elements 1a and the second group of light-emitting elements 1b. The first group of light-emitting elements 1a and the second group of light-emitting elements 1b are respectively disposed in the first group bracket 62 and the second group bracket 62. The first group of brackets 62 and the second group of brackets 62 are staggered on the carrier 5. The number of first group of brackets 62 may be the same or different from the number of second group brackets 62. The carrier 5 can have a center of symmetry. As shown in FIG. 25 or FIG. 38, in an embodiment in which the light-emitting device 11 of the present invention can be uniformly emitted, the first angle θ1 between the first group of light-emitting elements 1a and the carrier 5 can be different from that of the second group. The first angle θ1 between the element 1b and the carrier 5. In another embodiment in which the light-emitting device 11 of the present invention can be uniformly emitted, the length of the first group of brackets 62 may be different from the length of the second group of brackets 62, as exemplified by FIG. 38 or FIG. 39, the first group. The holder 62 is higher than the second group holder 62 so that the height of the first group of light-emitting elements 1a can be different from the height of the second group of light-emitting elements 1b. In still another embodiment in which the illumination device 11 of the present invention can be uniformly emitted, the distance between the first group of brackets 62 and the center of symmetry may be different from the distance between the second group of brackets 62 and the center of symmetry, for example, as shown in FIG. As shown, the distance between the first group of brackets 62 and the center of symmetry may be greater than the distance between the second group of brackets 62 and the center of symmetry.

以本發明的較佳實施例之一為例，如第38圖所示，當半導體發光元件1之第一群發光元件1a及第二群發光元件1b之數量相同且皆為四個時，承載座5之直徑可介於21-25毫米，在第一群發光元件1a與承載座5之間的第一夾角θ1可介於30-150度，在第二群發光元件1b與承載座5之間的第一夾角θ1可介於30-150度，第一群支架62之長度可介於10-20毫米，第二群支架62之長度可介於12-17毫米。根據前述，其較佳實施態樣包括有：承載座5的直徑較佳可相同或接近21毫米，在第一群發光元件1a與承載座5之間的第一夾角θ1較佳可相同於第二群發光元件1b與承載座5之間的第一夾角θ1，且夾角θ1等於或接近80度，第一群支架62之長度較佳可等於或接近15毫米，第二群支架62之長度較佳可等於或接近12毫米。 Taking one of the preferred embodiments of the present invention as an example, as shown in FIG. 38, when the number of the first group of light-emitting elements 1a and the second group of light-emitting elements 1b of the semiconductor light-emitting element 1 is the same and four, The diameter of the seat 5 can be between 21 and 25 mm, and the first angle θ1 between the first group of light-emitting elements 1a and the carrier 5 can be between 30 and 150 degrees, and the second group of light-emitting elements 1b and the carrier 5 The first angle θ1 may be between 30 and 150 degrees, the first group of brackets 62 may be between 10 and 20 millimeters, and the second group of brackets 62 may be between 12 and 17 millimeters. According to the foregoing, the preferred embodiment includes that the diameter of the carrier 5 is preferably the same or close to 21 mm, and the first angle θ1 between the first group of the light-emitting elements 1a and the carrier 5 is preferably the same as the first The first angle θ1 between the two groups of light-emitting elements 1b and the carrier 5, and the angle θ1 is equal to or close to 80 degrees, the length of the first group of brackets 62 is preferably equal to or close to 15 mm, and the length of the second group of brackets 62 is Canon is equal to or close to 12 mm.

根據較佳實施例之一，發光裝置11還可進一步包括一球型燈罩7，如第39圖所示。發光裝置11之承載座5可進一步包括一中心部與一延伸部，延伸部係延伸自中心部。不同群的支架62可分別延伸於中心部之一側與延伸部之一側。以第39圖所示之另一較佳實施例為例，當第一群及第二群的半導體發光元件1的數量相同且等於四時，燈罩7的外徑等於或相近於60毫米，燈罩7的底部內徑等於或相近於32毫米，在第一群發光元件1a與承載座5之間的第一夾角θ1可介於30-150度，在第二群發光元件1b與承載座5之間的第一夾角θ1可介於30-150度，第一群支架62與承載座5之對稱中心間的距離可介於10-13.5毫米，第二群支架62與承載座5之對稱中心間的距離可介於2-13.5毫米，第一群支架62之長度可介於5-16毫米，第二群支架62之長度可介於5-20毫米。根據前述，其較佳實施態樣包括有：在第一群發光元件1a與承載座5之間的第一夾角θ1較佳為等於或相近於80度，在第二群發光元件1b與承載座5之間的第一夾角θ1較佳為等於或相近於60度，第一群支架62之長度較佳為等於或相近於15.8毫米，第二群支架62之長度較佳為等於或相近於5.8毫米，第一群支架62與承載座5之對稱中心間的距離較佳為等於或相近於12毫米，第二群支架62與承載座5之對稱中心間的距離較佳為等於或相近於5毫米。本較佳實施例之發光裝置11之照度圖如第40圖所示，發光裝置11發光時之陰影減少，使得發光裝置11的發光更均勻。 According to one of the preferred embodiments, the light-emitting device 11 may further include a bulb-shaped lamp cover 7, as shown in FIG. The carrier 5 of the illumination device 11 can further include a central portion and an extension extending from the central portion. Different sets of brackets 62 may extend on one side of the central portion and one side of the extension, respectively. Taking another preferred embodiment shown in FIG. 39 as an example, when the number of the semiconductor light-emitting elements 1 of the first group and the second group is the same and equal to four, the outer diameter of the lamp cover 7 is equal to or close to 60 mm, and the lampshade The bottom inner diameter of 7 is equal to or close to 32 mm, and the first angle θ1 between the first group of light-emitting elements 1a and the carrier 5 may be between 30 and 150 degrees, in the second group of light-emitting elements 1b and the carrier 5 The first angle θ1 may be between 30 and 150 degrees, and the distance between the first group of brackets 62 and the center of symmetry of the carrier 5 may be between 10 and 13.5 millimeters, and between the center of the second group of brackets 62 and the center of the carrier 5 The distance between the first group of brackets 62 can be between 5 and 16 millimeters, and the length of the second group of brackets 62 can be between 5 and 20 millimeters. According to the foregoing, the preferred embodiment includes: the first angle θ1 between the first group of light-emitting elements 1a and the carrier 5 is preferably equal to or close to 80 degrees, and the second group of light-emitting elements 1b and the carrier The first angle θ1 between 5 is preferably equal to or close to 60 degrees, the length of the first group of brackets 62 is preferably equal to or close to 15.8 mm, and the length of the second group of brackets 62 is preferably equal to or close to 5.8. In millimeters, the distance between the first group of brackets 62 and the center of symmetry of the carrier 5 is preferably equal to or close to 12 millimeters, and the distance between the second group of brackets 62 and the center of symmetry of the carrier 5 is preferably equal to or close to 5 Millimeter. The illuminance diagram of the illuminating device 11 of the preferred embodiment is as shown in Fig. 40, and the shadow of the illuminating device 11 when it is illuminated is reduced, so that the illuminating device 11 emits light more uniformly.

除此之外，從俯視發光裝置11來看，卡片型、長條型或棍棒型的半導體發光元件1可設置在承載座5上並可形成V型、U型、三邊形及多邊形排列，其排列態樣都適用於本發明之前述所有實施例。本發明可應用於燈泡、燈管、廣告看板等領域，本發明之發光二極體晶片因其較佳發光效果、低耗電量以及出光均勻等優點實深具經濟效益和實用價值。 In addition, the card type, the strip type or the stick type semiconductor light emitting element 1 can be disposed on the carrier 5 and can be formed into a V-shaped, U-shaped, triangular-shaped, and polygonal arrangement, as viewed from the plan view of the light-emitting device 11. The arrangement is applicable to all of the foregoing embodiments of the present invention. The invention can be applied to the fields of a bulb, a lamp tube, an advertising board and the like. The light-emitting diode chip of the invention has substantial economic benefits and practical value because of its advantages of better luminous effect, low power consumption and uniform light emission.

以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.

11‧‧‧發光裝置 11‧‧‧Lighting device

1a‧‧‧第一群發光元件 1a‧‧‧First group of light-emitting elements

1b‧‧‧第二群發光元件 1b‧‧‧Second group of light-emitting elements

5‧‧‧承載座 5‧‧‧ bearing seat

62‧‧‧支架 62‧‧‧ bracket

7‧‧‧燈罩 7‧‧‧shade

Claims (21)

一種發光裝置，其包括：一承載座，該承載座具有一對稱中心；以及複數個半導體發光元件，設置於該承載座且環繞該對稱中心；其中，該複數個半導體發光元件的至少一個半導體發光元件包括有：一透明基板，該透明基板具有相對設置的一支撐面與一第二主表面；以及一發光二極體結構，設置於該支撐面，且與未設置該發光二極體結構的至少一部份的該支撐面形成可發光的一第一主表面，該發光二極體結構發出的至少一部份光線可通過該透明基板且由該第二主表面出光。 A light-emitting device comprising: a carrier having a center of symmetry; and a plurality of semiconductor light-emitting elements disposed on the carrier and surrounding the center of symmetry; wherein at least one semiconductor light-emitting of the plurality of semiconductor light-emitting elements The component includes: a transparent substrate having a supporting surface and a second main surface disposed opposite to each other; and a light emitting diode structure disposed on the supporting surface and not provided with the light emitting diode structure At least a portion of the support surface forms a first main surface that is illuminable, and at least a portion of the light emitted by the LED structure can pass through the transparent substrate and be emitted by the second main surface. 如請求項1所述之發光裝置，其中該承載座與該複數個半導體發光元件的至少一個半導體發光元件之間有第一夾角，且該第一夾角可介於30-150度。 The light-emitting device of claim 1, wherein the carrier has a first angle with the at least one semiconductor light-emitting element of the plurality of semiconductor light-emitting elements, and the first angle may be between 30 and 150 degrees. 如請求項1所述之發光裝置，其中該承載座與該複數個半導體發光元件的至少一個半導體發光元件之間有第一夾角，且該第一夾角可介於60-90度。 The illuminating device of claim 1, wherein the carrier has a first angle between the carrier and the at least one semiconductor illuminating component of the plurality of semiconductor illuminating elements, and the first angle may be between 60 and 90 degrees. 如請求項1所述之發光裝置，其中該承載座與該複數個半導體發光元件的至少一個半導體發光元件之間有第一夾角，且該第一夾角可等於或相近於60度。 The illuminating device of claim 1, wherein the carrier has a first angle with the at least one semiconductor illuminating element of the plurality of semiconductor illuminating elements, and the first angle is equal to or nearly 60 degrees. 如請求項1所述之發光裝置，其中該承載座與該複數個半導體發光元件的至少一個半導體發光元件之間有第一夾角，且該第一夾角可等於或相近於 80度。 The illuminating device of claim 1, wherein the carrier has a first angle with the at least one semiconductor illuminating component of the plurality of semiconductor illuminating elements, and the first angle is equal to or close to 80 degrees. 如請求項1所述之發光裝置，其中該複數個半導體發光元件的至少二個半導體發光元件以非平行方式排列。 The light-emitting device of claim 1, wherein the at least two semiconductor light-emitting elements of the plurality of semiconductor light-emitting elements are arranged in a non-parallel manner. 如請求項1所述之發光裝置，其中該複數個半導體發光元件的至少二個半導體發光元件以平行方式排列。 The light-emitting device of claim 1, wherein the at least two semiconductor light-emitting elements of the plurality of semiconductor light-emitting elements are arranged in a parallel manner. 如請求項1所述之發光裝置，其中該複數個半導體發光元件的至少一個半導體發光元件的一主發光面不面朝該對稱中心。 The illuminating device of claim 1, wherein a main illuminating surface of the at least one semiconductor illuminating element of the plurality of semiconductor illuminating elements does not face the symmetry center. 如請求項1所述之發光裝置，其中該複數個半導體發光元件包括至少一第一群發光元件及一第二群發光元件，該第一群發光元件與該對稱中心間之一距離不同於該第二群發光元件與該對稱中心間之一距離。 The illuminating device of claim 1, wherein the plurality of semiconductor illuminating elements comprise at least a first group of illuminating elements and a second group of illuminating elements, the distance between the first group of illuminating elements and the center of symmetry being different from the A distance between the second group of light-emitting elements and the center of symmetry. 如請求項9所述之發光裝置，其中該第一群發光元件與該對稱中心間之該距離可介於10-13.5毫米。 The illuminating device of claim 9, wherein the distance between the first group of illuminating elements and the center of symmetry may be between 10 and 13.5 mm. 如請求項9所述之發光裝置，其中該第二群發光元件與該對稱中心間之該距離可介於2-13.5毫米。 The illuminating device of claim 9, wherein the distance between the second group of illuminating elements and the center of symmetry may be between 2-13.5 mm. 如請求項1所述之發光裝置，其中該複數個半導體發光元件包括至少一第一群發光元件及一第二群發光元件，該第一群發光元件之一高度不同於該第二群發光元件之一高度。 The illuminating device of claim 1, wherein the plurality of semiconductor illuminating elements comprise at least one first group of illuminating elements and a second group of illuminating elements, one of the first group of illuminating elements being different in height from the second group of illuminating elements One height. 如請求項1所述之發光裝置，其另包括：複數個支架，設置於該承載座與該複數個半導體發光元件的至少一部份半 導體發光元件之間。 The illuminating device of claim 1, further comprising: a plurality of brackets disposed on the carrier and at least a portion of the plurality of semiconductor light emitting elements Between the conductor light-emitting elements. 如請求項13所述之發光裝置，其中該複數個支架之長度可介於5-20毫米。 The illuminating device of claim 13, wherein the plurality of brackets have a length of between 5 and 20 mm. 如請求項1所述之發光裝置，其中該複數個半導體發光元件包括至少一第一群發光元件及一第二群發光元件，該第一群發光元件與該承載座之間的第一夾角不同於該第二群發光元件與該承載座之間的第一夾角。 The illuminating device of claim 1, wherein the plurality of semiconductor illuminating elements comprise at least one first group of illuminating elements and a second group of illuminating elements, the first angle between the first group of illuminating elements and the carrier being different a first angle between the second group of light emitting elements and the carrier. 如請求項9所述之發光裝置，其中該第一群發光元件與該第二群發光元件交錯排列於該承載座。 The illuminating device of claim 9, wherein the first group of illuminating elements and the second group of illuminating elements are staggered in the carrier. 如請求項12所述之發光裝置，其中該第一群發光元件與該第二群發光元件交錯排列於該承載座。 The illuminating device of claim 12, wherein the first group of illuminating elements and the second group of illuminating elements are staggered in the carrier. 如請求項15所述之發光裝置，其中該第一群發光元件與該第二群發光元件交錯排列於該承載座。 The illuminating device of claim 15, wherein the first group of illuminating elements and the second group of illuminating elements are staggered in the carrier. 如請求項1所述之發光裝置，其中該承載座可為星形或輪形。 The illuminating device of claim 1, wherein the carrier is in the shape of a star or a wheel. 如請求項1所述之發光裝置，其中該承載座可包括至少二個鰭片，該複數個半導體發光元件的至少一個半導體發光元件可設置於該鰭片。 The illuminating device of claim 1, wherein the carrier can include at least two fins, and at least one of the plurality of semiconductor illuminating elements can be disposed on the fin. 如請求項1所述之發光裝置，其中該承載座可包括一中心部以及一延伸部，該延伸部延伸於該中心部，該複數個半導體發光元件的至少二個半導體發光元件可分別設置於該中心部與該延伸部。 The illuminating device of claim 1, wherein the carrier base comprises a central portion and an extending portion extending from the central portion, and at least two semiconductor light emitting elements of the plurality of semiconductor light emitting elements are respectively disposed on The center portion and the extension portion.
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