201227788 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種場發射陰極裝置及其製備方法，尤其涉 及一種適用於電子發射功率較大的場發射陰極裝置及其 製備方辛。 【先前技#ί】 [0002] 場發射顯示器係繼陰極射線管（CRT)顯示器和液晶顯示器 (LCD)之後，最具發展潛力的下一代新興技術。相對於先 前的顯示器’場發射顯示器具有顯示效果好 '視角大、 功耗小及體積小等優點，尤其係基於奈米碳管之場發射 顯示器，近年來越來越受到重視、 [0003] 場發射陰極裝置係場發射顯示器之重要元件。先前技術 中，場發射陰極裝置的製備方法通常包括以下步驟：提 供一基底；在基底上形成複數陰極電極；將奈米碳管通 過化學氣相沈積法設置在陰極電極上形成電子發射體。 圆然’以上述方法製備的場發射陰極較中，電子發射體 中之奈米碳管與陰極電極的結合力不夠強，因此發 射陰極裝置電子發射功率較大時，奈米碳管在發射電子 時谷易被強電場拔出，從而限制了該場發射陰極裝置的 電子發射能力和壽命，影響了場發射陰極I置的穩定性 〇 【發明内容】 则㈣於此，提供—種適用於電子發射功率較大的場發射 陰極裝置實為必要。 099146333 表單編號A0101 第4頁/共27頁 0992079677-0 201227788 _6]種場發射陰極裝置，包括：-基底；-金屬板，所述 金屬板具有一第一表面、一與第一表面相對的第二表面 及貝穿該第一表面和第二表面的至少—通孔，所述金屬 板的第—表面與所述基底貼合設置；至少一線狀電子發 射體，其與所述金屬板電連接；及一填充物，所述填充 物填充於所述至少一通孔中；其中，每個通孔内至少設 置有所述線狀電子發射體，位於通孔内的所述線狀電 子發射體的一端設置於所述金屬板的第一表面與所述基 底之間。201227788 VI. Description of the Invention: [Technical Field] The present invention relates to a field emission cathode device and a method of fabricating the same, and more particularly to a field emission cathode device suitable for electron emission power and a preparation thereof. [Previous Technology #ί] [0002] Field emission display is the next generation of emerging technologies with the most potential after cathode ray tube (CRT) displays and liquid crystal displays (LCDs). Compared with the previous display, the 'field emission display has good display effect', such as large viewing angle, low power consumption and small volume, especially based on the field emission display of carbon nanotubes, which has received more and more attention in recent years. The emitter cathode device is an important component of a field emission display. In the prior art, the method of preparing a field emission cathode device generally comprises the steps of: providing a substrate; forming a plurality of cathode electrodes on the substrate; and disposing the carbon nanotubes on the cathode electrode by chemical vapor deposition to form an electron emitter. In the field emission cathode prepared by the above method, the binding force between the carbon nanotubes and the cathode electrode in the electron emitter is not strong enough, so when the electron emission power of the cathode device is large, the carbon nanotubes emit electrons. Time Valley is easily pulled out by a strong electric field, which limits the electron emission capability and lifetime of the field emission cathode device, affecting the stability of the field emission cathode I. [Summary] (4) Here, provide a suitable type for electrons A field emission cathode device with a large transmission power is necessary. 099146333 Form No. A0101 Page 4 of 27 Page 0992079677-0 201227788 _6] A field emission cathode device comprising: a substrate; a metal plate having a first surface and a first surface opposite to the first surface The second surface and the shell penetrate at least the through hole of the first surface and the second surface, the first surface of the metal plate is disposed in contact with the substrate; at least one linear electron emitter electrically connected to the metal plate And a filler filled in the at least one through hole; wherein each of the through holes is provided with at least the linear electron emitter, and the linear electron emitter located in the through hole One end is disposed between the first surface of the metal plate and the substrate.
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[0007] ❹ 一種場發射陰極裝置的製猶方法，其包括以下步驟：提 供一金屬板，該金屬板包括1淹一袅面;與該第一表面 相對的第二表面及貫穿第一表面和第二表面的至少一通 孔；提供至少一場發射線材，對應所述金屬板的每一通 孔設置所述至少一場發射線材，將所述學發射線材的一 端固定於所述金屬板的第一表面s，將另一端貫穿所述金 屬板的通孔從所述金屬板的第二表面拉出；切斷所述至 少一場發射線材’從而在所述余屬板的每個通孔内形成 至少一線狀電子發射體；提供一基底，將所述金屬板的 第一表面貼附於將所述基底一表面；在每個設置有線狀 電子發射體的通孔内填充填充物，以使電子發射體固定 於通孔内，形成所述場發射陰極裝置。 [0008] 與先前技術相比’由於本發明提供的場發射陰極裝置中 的電子發射體的一部份固定於金屬板與基底之間，一部 份通過填充物固定於金屬板通孔中，因此在場發射陰極 裝置電子發射功率較大的情況下，可以承受較大的電場 099146333 表單編號A0I01 第5頁/共27頁 0992079677-0 201227788 兒子發射體具有更強 另外，由於金屬板 中產生的熱量快速的 %子發射體熔斷，進 壽命。 力而不會被電場力拔出，從而使言亥 的電子發射能力和更長的使用壽命 具有良好的導熱能力，可將場發射 傳導散發出去，因此可以有效防止 一步的提高場發射陰極裝置的使用 【實施方式】 [0009] 以下將結合附圊詳細說明本發明實施 極裝置及其製備方法。 例提供的場發射陰 [0010] [0011] [0012] *月參閱圖1至圖3B，本發明提供一插 種場發射陰極裝置1〇[0007] A method of fabricating a field emission cathode device, comprising the steps of: providing a metal plate comprising: a flooded surface; a second surface opposite the first surface and extending through the first surface At least one through hole of the second surface; at least one field emission wire is provided, the at least one field emission wire is disposed corresponding to each of the through holes of the metal plate, and one end of the learning emission wire is fixed to the first surface of the metal plate Pulling the other end through the through hole of the metal plate from the second surface of the metal plate; cutting the at least one field emission wire to form at least one line in each through hole of the remaining plate An electron emitter; a substrate is attached, the first surface of the metal plate is attached to a surface of the substrate; and a filling hole is filled in each of the through holes provided with the linear electron emitter to fix the electron emitter The field emission cathode device is formed in the via hole. [0008] Compared with the prior art, a portion of the electron emitter in the field emission cathode device provided by the present invention is fixed between the metal plate and the substrate, and a portion is fixed in the through hole of the metal plate by the filler. Therefore, in the case where the field emission cathode device has a large electron emission power, it can withstand a large electric field. 099146333 Form No. A0I01 Page 5 / Total 27 Page 0992079677-0 201227788 The son emitter is stronger, additionally, due to the metal plate The fast heat of the sub-emitter is blown into the life. The force is not pulled out by the electric field force, so that the electronic emission capability and the longer service life of Yanhai have good thermal conductivity, and the field emission conduction can be dissipated, thereby effectively preventing the field emission cathode device from being improved in one step. [Embodiment] [0009] Hereinafter, the embodiment of the present invention and a method of manufacturing the same will be described in detail with reference to the accompanying drawings. The field emission provided by the example is [0010] [0012] * month Referring to FIG. 1 to FIG. 3B, the present invention provides a seed field emission cathode device.
’所述場發射陰極裝置100包括至小森 ^ 一電子發射體11 〇， -金屬板120及一基底130，所述金屬板12&設置於基底 130-表面。所述金屬板12〇具有複數通孔i2i，所述至 少—電子發射體110設置於通孔121中。 所述基底13G的材料限’可為麵、喊、塑膠或聚合 物等絕緣材料’也可為金、:銀、爾及銘一種或任意幾種 之合金，也可為矽等半導體材料，只需保證所述基底130 能夠具有固定的形狀及一定的機械強度。所述基底丨3 〇的 形狀與厚度不限，可根據實際需要製備。優選地，所述 基底130的形狀為正方形或矩形，厚度大於等於15微米。 所述金屬板120具有一第一表面i2〇a、一與第一表面 120a相對的第二表面12〇1)及貫穿該第一表面12〇&和第二 表面120b的至少一通孔121。當所述金屬板12〇具有複數 通孔121時，所述複數通孔丨21可以均勻分佈或按照預定 099146333 的圖形分佈。所述通孔121的橫截面形狀不限，可為圓形 、矩形、正方形等，優選的，所述通孔12ι的橫截面形狀 表單編號A0101 第6頁/共27頁 0992079677-0 201227788 為圓形，通孔121直徑可為3微米至1〇〇〇微米。所述金屬 板120的材料可為金、銀、銅、鋁或上述金屬任意組合的 合金中的任意—種。所述金屬板12〇的形狀與厚度不限， 可根據實際需要製備。優選地，所述金屬板12〇的形狀為 正方形或矩形，厚度大於等於15微米。本實施例中，所 述金屬板120為一邊長為毫米，屬度為1毫米的正方形 鋼板。由於金屬板12〇具有容易成塑加工、開孔工藝成熟 等優點’且金屬板120具有良好的導熱能力’故，所述場 發射陰極裝置100中採用金屬板120町有效降低工藝成本 • ，且可有利於在應甩時改善電子發射禮110的散熱狀況。 所述第一表面120a與所述基底130魴合設置’並通過一黏 結層140與所述基底130結合。所述黏結層140的厚度不 限，其材料可採用耐熱黏結劑，如環氡黏合劑等，所述 耐熱黏結劑可分別與金屬板120及基底130牢固的黏結。 [0013]所述電子發射體no與所述金屬板12〇的通孔121對應設 置。每一通孔121内可設置至少一所述電子發射體110 » 、 所述電子發射體110為一線狀結構並且設置在所述通孔 β 121内。具體地，所述電子發射體包括相對的兩端， 所述電子發射體11〇的一端設置於所述金屬板12〇的第一 表面120a與基底13〇之間並且被金屬板120與基底130夾 持固定。所述電子發射體的另一端向遠離所述第一表 面120a的方向延伸，即向遠離所述基底130的方向延伸， 作為電子發射端。所述電子發射體110貫穿所述通孔丨21 ，所述電子發射體丨10的電子發射端可與所述金屬板120 的第二表面120b爭齊戒延伸出所述通孔121。請參閱圖 099146333 衫磁 AG1G1 ^ η 27 I 0992079677-0 201227788 3A，當所述電子發射體no的電子發射端設置在所述通孔 121内時，所述電子發射端應與所述金屬板丨2〇的第二表 面120b平齊，即位於同一平面内，並且所述電子發射體 110與所述通孔121的侧壁間隔設置，使得金屬板12〇不 會遮罩所述電子發射端的電子，確保電子能在電場作用 下從電子發射體的電子發射端發射出來。請參閱圖3B， 當所述電子發射體110貫穿所述通孔121向遠離所述金屬 板120的方向延伸時，所述電子發射體ho的電子發射端 從所述通孔121内延伸出來，未設置在通孔12丨内。 [0014] 本實施例中’每一通孔121内僅設置有一電子發射體11 〇 ’所述電子發射體110的一 4:¾走於所.述金屬板1 2 〇與基 底130之間，電子發射體11〇貫穿所述金屬板12()的通孔 121 ’另一端從所述通孔121内延伸出來，向遠離金屬板 120第二表面120b的方向延伸’作為電子發射端。具體的 ，所述電子發射體110包括一設置於所述第一表面12〇3之 第一部份110a、一位於通扎12Ϊ中之苐二部份ii〇b及一 遠離第二表面120b延伸之第.部份11 〇c，所述第一部份 110a、第二部份ll〇b及第三部份ll〇c為依序相連的一體 結構。具體的’所述第一部份ll〇a位於第一表面i2〇a與 基底130之間並且貼附於所述金屬板120的第一表面i2〇a ’即所述線狀電子發射體11 〇的部份側壁貼附於第一表面 1 20a。所述第一部份11 〇a的長度不限，只要能使所述電 子發射體110的部份側壁與第一表面1 20a保持部份接觸即 可。所述第二部份11 〇b整體位於通孔121中，並且所述第 二部份110b的兩端分別與第一部份110a、第三部份11〇(： 099146333 表單編號A0101 第8頁/共27頁 0992079677-0 201227788 Ο [0015]The field emission cathode device 100 includes a Komori ^ electron emitter 11 〇, a metal plate 120 and a substrate 130 disposed on the surface of the substrate 130. The metal plate 12A has a plurality of through holes i2i, and at least the electron emitter 110 is disposed in the through hole 121. The material limit of the substrate 13G can be an insulating material such as a surface, a shout, a plastic or a polymer. The alloy 13 can also be an alloy of one or any of gold, silver, and er, or a semiconductor material such as tantalum. It is necessary to ensure that the substrate 130 can have a fixed shape and a certain mechanical strength. The shape and thickness of the substrate 丨3 不限 are not limited and can be prepared according to actual needs. Preferably, the substrate 130 has a square or rectangular shape and a thickness of 15 μm or more. The metal plate 120 has a first surface i2〇a, a second surface 12〇1) opposite to the first surface 120a, and at least one through hole 121 extending through the first surface 12〇 and the second surface 120b. When the metal plate 12 has a plurality of through holes 121, the plurality of through holes 21 may be uniformly distributed or distributed in a pattern of a predetermined 099146333. The cross-sectional shape of the through hole 121 is not limited, and may be circular, rectangular, square, or the like. Preferably, the cross-sectional shape of the through hole 12ι is in the form number A0101, page 6 / total 27 pages 0992079677-0 201227788 The through hole 121 may have a diameter of 3 micrometers to 1 micrometer. The material of the metal plate 120 may be any one of gold, silver, copper, aluminum or an alloy of any combination of the above metals. The shape and thickness of the metal plate 12〇 are not limited and can be prepared according to actual needs. Preferably, the metal plate 12 is square or rectangular in shape and has a thickness of 15 μm or more. In the present embodiment, the metal plate 120 is a square steel plate having a length of one millimeter and a degree of 1 mm. Since the metal plate 12 has the advantages of easy plastic forming, mature hole forming process, and the metal plate 120 has good thermal conductivity, the use of the metal plate 120 in the field emission cathode device 100 effectively reduces the process cost. It can be beneficial to improve the heat dissipation condition of the electronic launching ceremony 110 when it is applied. The first surface 120a is coupled to the substrate 130 and coupled to the substrate 130 by an adhesive layer 140. The thickness of the adhesive layer 140 is not limited, and the material thereof may be a heat-resistant adhesive such as a ring-shaped adhesive, etc., and the heat-resistant adhesive may be firmly bonded to the metal plate 120 and the substrate 130, respectively. The electron emitter no is disposed corresponding to the through hole 121 of the metal plate 12A. At least one of the electron emitters 110 » may be disposed in each of the through holes 121 , and the electron emitters 110 are in a line structure and disposed in the through holes β 121 . Specifically, the electron emitter includes opposite ends, and one end of the electron emitter 11 is disposed between the first surface 120a of the metal plate 12A and the substrate 13A and is separated by the metal plate 120 and the substrate 130. Clamped and fixed. The other end of the electron emitter extends in a direction away from the first surface 120a, that is, in a direction away from the substrate 130 as an electron emission end. The electron emitter 110 penetrates the through hole 21, and the electron emitting end of the electron emitter 10 can compete with the second surface 120b of the metal plate 120 or extend out of the through hole 121. Referring to FIG. 099146333, the magnetic field AG1G1 ^ η 27 I 0992079677-0 201227788 3A, when the electron emission end of the electron emitter no is disposed in the through hole 121, the electron emission end should be opposite to the metal plate The second surface 120b of the second turn is flush, that is, in the same plane, and the electron emitter 110 is spaced apart from the sidewall of the through hole 121 so that the metal plate 12 does not cover the electrons at the electron emitting end. To ensure that electrons can be emitted from the electron-emitting end of the electron emitter under the action of an electric field. Referring to FIG. 3B, when the electron emitter 110 extends through the through hole 121 in a direction away from the metal plate 120, an electron emission end of the electron emitter ho extends from the through hole 121. Not set in the through hole 12丨. [0014] In the present embodiment, only one electron emitter 11 is disposed in each of the via holes 121. A 4:3⁄4 of the electron emitter 110 is disposed between the metal plate 1 2 and the substrate 130. The other end of the through hole 121' through which the emitter 11a penetrates the metal plate 12() extends from the inside of the through hole 121, and extends in a direction away from the second surface 120b of the metal plate 120 as an electron emission end. Specifically, the electron emitter 110 includes a first portion 110a disposed on the first surface 12〇3, a second portion ii〇b disposed in the through hole 12Ϊ, and an extension away from the second surface 120b. The first part 110a, the second part llb and the third part ll〇c are an integral structure connected in sequence. Specifically, the first portion 11a is located between the first surface i2〇a and the substrate 130 and is attached to the first surface i2〇a′ of the metal plate 120, that is, the linear electron emitter 11 A portion of the side wall of the crucible is attached to the first surface 110a. The length of the first portion 11 〇a is not limited as long as a part of the side wall of the electron emitter 110 can be partially contacted with the first surface 120a. The second portion 11 〇b is entirely located in the through hole 121, and the two ends of the second portion 110b are respectively associated with the first portion 110a and the third portion 11 (: 099146333 Form No. A0101, page 8 / Total 27 pages 0992079677-0 201227788 Ο [0015]
[0016] 相連接，而且其軸向基本垂直於所述金屬板120的第一表 面120a及第二表面120b。所述第三部份11 0c向遠離金屬 板120第一表面120a的方向延伸，作為電子發射端。優選 的’所述第一部份ll〇a的長度為第二部份11 0b長度的2 倍，以更加牢固的固定所述電子發射體110。所述第三部 份110c的一端與第二部份110b相連’另一端向遠離金屬 板120的方向延伸作為電子發射端。所述電子發射端可與 所述金屬板120的第二表面120b平齊’即所述電子發射體 110與所述通孔121的孔壁間隔設置，所述電子發射體 110的電子發射端設置於通孔121内，益且與所述金屬板 120的第二表面120b平齊設置:；所述電子發射體也可 貫穿所述通孔121，並且所述電子發射體的電子發射 端延伸出所述通孔121，向遠離金屬板120的方向延伸。 請一併參閱圖4，當所述每個通孔121内設置有複數電子 發射體110時，所述複數電子發射體110可相互間隔設置 或部份接觸設置，優選她，設置’在同一通孔121内的所述 複數電子發射體Π0的電子發射端相互間隔設置，從而減 少相互之間的遮罩效應。 進一步的，所述通孔121内設置有填充物123，用於進一 步固定所述電子發射體110。所述填充物123將所述電子 發射體110的部份表面緊密包覆，所述電子發射體11〇的 電子發射端應從所述填充物123中延伸出來，未被所述填 充物123包覆，即當所述電子發射體11〇的電子發射端延 伸出所述金屬板的第二表面12〇b時，所述填充物123可部 份填充於所述通孔121中，也可填滿所述通孔121 ;當所 099146333 表單編號A0101 第9頁/共27頁 0992079677-0 201227788 述電子發射體110的電子發射端與所述金屬板12〇的第二 表面12Gb平齊時’所述填充物123部份填充於所述通孔 121中’以保證所述電子發射端從所述填充物123中延伸 出來。所述填充物123為導電導熱材料，如錫f。所述填 充物123歸m定所述電子發射體11Q，同時將電子發射 體no在工作過程中產生的熱量傳導給金屬板i2Q，崎 低電子發射體110本身的溫度。 [0017] [0018] 所述電子發射體no為-具有柔祕和自切性的，且可 以用於發射電子的線狀電子發射體，其句 六匕括奈米碳管線 狀結構、碳纖維或矽奈米線線狀結構等。 丄以理解，所 述電子發射體m還可以與至少-具有柔W和可塑性的 支撐線材平行緊密設置或杻轉設置j所述支撐線材可為 鐵絲、鋁絲、銅絲、金絲、鉬絲或銀絲笨 中金屬微絲。所 述支撐線材的直徑和長度可根據實際需要而選定◊優選 地，所述支撐體線材的直径為50展米到5〇〇微米。所述支 撑線材可以進一步提高電子發射體110的自支推性。 本實施例中，以奈米碳管線狀結構為例說明。所述夬米 碳管線狀結構為一自支撐結構。所謂“自支撐結構即 該奈米碳管線狀結構無需通過一支撐體支撐，也能保持 自身特定的形狀。所述奈米碳管線狀結構包括至少一奈 米石炭管線。當《碳管線狀結構包括複數“❹線: ，複數奈米碳管線可平行排列組成束狀結構戋複數齐米 碳管線相互扭轉組成絞線結構。所述奈米喂管線狀結構 的直徑為1微米到500微米。本實施例中，所述奈米碳管 線狀結構的直徑為5 0微米。 099146333 表單編號A0101 第10頁/共27頁 0992079677-0 201227788 [0019] [0020] Ο [0021] 所述奈米碳管線可為非扭轉的奈米碳管線或扭轉的奈米 碳管線。該非扭轉的奈米碳管線包括複數沿奈米碳管線 軸向延伸的奈米碳管，即奈米碳管的軸向與奈米碳管線 的轴向基本平行。該扭轉的奈米碳管線包括複數繞奈米 碳管線軸向螺旋排列的奈米碳管，即奈米碳管的軸向沿 奈米壤管線的袖向螺旋延伸。所述奈米碳管線中每一奈[0016] connected, and axially substantially perpendicular to the first surface 120a and the second surface 120b of the metal plate 120. The third portion 110c extends away from the first surface 120a of the metal plate 120 as an electron-emitting end. Preferably, the length of the first portion 11a is 2 times the length of the second portion 110b to more firmly fix the electron emitter 110. One end of the third portion 110c is connected to the second portion 110b. The other end extends in a direction away from the metal plate 120 as an electron-emitting end. The electron emission end may be flush with the second surface 120b of the metal plate 120, that is, the electron emitter 110 is spaced apart from the hole wall of the through hole 121, and the electron emission end of the electron emitter 110 is disposed. In the through hole 121, it is disposed flush with the second surface 120b of the metal plate 120: the electron emitter can also penetrate through the through hole 121, and the electron emission end of the electron emitter extends The through hole 121 extends in a direction away from the metal plate 120. Referring to FIG. 4, when a plurality of electron emitters 110 are disposed in each of the through holes 121, the plurality of electron emitters 110 may be disposed at a distance or a partial contact with each other, preferably her, setting 'in the same pass. The electron-emitting ends of the plurality of electron emitters Π0 in the holes 121 are spaced apart from each other, thereby reducing the masking effect between each other. Further, a filler 123 is disposed in the through hole 121 for further fixing the electron emitter 110. The filler 123 closely covers a part of the surface of the electron emitter 110, and the electron emission end of the electron emitter 11〇 should extend from the filler 123 without being covered by the filler 123. When the electron emission end of the electron emitter 11〇 extends out of the second surface 12〇b of the metal plate, the filler 123 may partially fill the through hole 121 or may be filled up. The through hole 121; when the 099146333 form number A0101 page 9 / 27 pages 0992079677-0 201227788 when the electron emission end of the electron emitter 110 is flush with the second surface 12Gb of the metal plate 12A A portion of the filler 123 is filled in the through hole 121 to ensure that the electron emission end extends from the filler 123. The filler 123 is an electrically and thermally conductive material such as tin f. The filler 123 is used to determine the electron emitter 11Q while conducting heat generated by the electron emitter no during operation to the metal plate i2Q, which lowers the temperature of the electron emitter 110 itself. [0018] The electron emitter no is - has a soft and self-cutting property, and can be used for electron-emitting linear electron emitters, the six-dimensional carbon nanotube-like structure, carbon fiber or矽Nan line linear structure and so on. In order to understand, the electron emitter m can also be arranged in parallel with or at least with a support wire having a soft W and plasticity. The support wire can be a wire, an aluminum wire, a copper wire, a gold wire or a molybdenum wire. Or silver wire stupid metal microfilament. The diameter and length of the support wire can be selected according to actual needs. Preferably, the support wire has a diameter of 50 to 5 microns. The support wire can further improve the self-extraction of the electron emitter 110. In this embodiment, a nanocarbon line structure is taken as an example. The glutinous carbon line structure is a self-supporting structure. The so-called "self-supporting structure, that is, the nanocarbon line-like structure, can maintain its own specific shape without supporting through a support. The nanocarbon pipeline-like structure includes at least one nano-carboniferous pipeline. When the carbon pipeline structure Including plural "❹ line:, the plurality of nano carbon pipelines can be arranged in parallel to form a bundle structure, and the plurality of Qimi carbon pipelines are twisted to form a twisted wire structure. The nano feed line structure has a diameter of from 1 micrometer to 500 micrometers. In this embodiment, the carbon nanotube linear structure has a diameter of 50 μm. 099146333 Form No. A0101 Page 10 of 27 0992079677-0 201227788 [0020] [0020] The nanocarbon line may be a non-twisted nanocarbon line or a twisted nanocarbon line. The non-twisted nanocarbon pipeline includes a plurality of carbon nanotubes extending axially along the carbon nanotube line, i.e., the axial direction of the carbon nanotubes is substantially parallel to the axial direction of the carbon nanotubes. The twisted nanocarbon pipeline comprises a plurality of carbon nanotubes arranged axially helically around the carbon nanotubes, i.e., the axial direction of the nanocarbon tubes extends along the sleeve spiral of the nano-rice pipeline. Each of the nano carbon pipelines
I 米碳管與在延伸方向上相鄰的奈米碳管通過凡得瓦力首 尾相連。所述奈米碳管線長度不限，直徑為0. 5奈米〜100 微米。該奈米碳管線中的奈米碳管為單壁、雙壁或多壁 奈米碳管。該奈米碳管的直徑小於5奈米，長度範圍為10 微米〜100微米。 本發明提供的場發射陰極裝置100中的電子發射體110的 一部份固定於金屬板120與基底130之間，所以該電子發 射體110被牢固地固定在金屬板120與基底130之間，因 此可以承受較大的電場力而不會被電場力拔出，而且由 於金屬板120具有良好的導熱能力，因此可以將場發射中 產生的熱量傳導散發出去，因此可有效防止電子發射體 熔斷，進一步的提高場發射陰極裝置的使用壽命。所述 場發射陰極裝置100可應用於場發射顯示器、場發射平面 光源等場發射裝置中。 請一併參閱圖5及圖6，本發明進一步提供上述場發射陰 極裝置100的製備方法，其包括以下步驟： 步驟S10，提供一金屬板120，該金屬板120包括一第一 表面120a及與該第一表面120a相對的第二表面120b，且 該金屬板120具有複數貫穿該第一表面120a和第二表面 099146333 表單編號A0101 第11頁/共27頁 0992079677-0 [0022] 201227788 [0023] [0024] [0025] [0026] [0027] 1 20b的通孔121。 步驟S20 ’提供至少一電子發射體，對應所述金屬板 120的每個通孔121設置至少一電子發射體110。 對應所述金屬板120的每個通孔121設置至少一電子發射 體110的方法具體包括以下步驟： 步驟S21，提供一場發射線材供給裝置，用以連續不斷的 提供場發射線材1101。 所述場發射線材1101供給裝置包括一針管202，且該針管 202具有一針頭2〇4 ’將一場發射線杖]1〇】穿設於該針管 202内，並使該場發射線材11〇1的一端從釺管2〇2的針頭 204露出。 ： 所述針管202的内徑大小可根據所述場發射線材丨1〇ι的直 徑大小選擇，外徑大小可根據所述通孔121大小選擇。優 選地，所述針管202的内徑大小為場發射線材11〇1的直徑 大小的5倍至10倍以減小針管2〇2與場發射線材u〇i之間 的摩擦力。所述場發射線材_可以連續不斷地從針頭 204伸出。可以理解，所述場發射線材供給裝置還可包括 機械手臂（圖未示），控制電腦（圖未示）等輔助設備 以實現自動化連續生產。本實施例中，所述場發射^材 1101的供給裝置為具有—針管2Q2的注射器，其針頭加 被磨成平面。所述場發射線材1101為具有柔韌性和自支 樓性的，宏觀可操作，且可以用作發射電子。將該場發 射線材1101切斷可以得到複數電子發射體11〇。本實^例 中，所述場發射線材1101為一奈米碳管線狀結構。例 099146333 表單編號A0101 第12頁/共27頁 0992079677-0 201227788 [0028] [0029]The I m carbon tube is connected to the carbon nanotubes adjacent in the extending direction by the end of the van der Waals force. 5纳米〜100微米。 The nano carbon line length is not limited, the diameter is 0. 5 nanometers ~ 100 microns. The carbon nanotubes in the nanocarbon line are single-walled, double-walled or multi-walled carbon nanotubes. The carbon nanotubes have a diameter of less than 5 nanometers and a length ranging from 10 micrometers to 100 micrometers. A part of the electron emitter 110 in the field emission cathode device 100 provided by the present invention is fixed between the metal plate 120 and the substrate 130, so that the electron emitter 110 is firmly fixed between the metal plate 120 and the substrate 130. Therefore, it is possible to withstand a large electric field force without being pulled out by the electric field force, and since the metal plate 120 has a good thermal conductivity, the heat generated in the field emission can be conducted, thereby effectively preventing the electron emitter from being blown. Further improving the service life of the field emission cathode device. The field emission cathode device 100 can be applied to field emission devices such as field emission displays, field emission planar light sources, and the like. Referring to FIG. 5 and FIG. 6 , the present invention further provides a method for fabricating the field emission cathode device 100, which includes the following steps: Step S10, providing a metal plate 120, the metal plate 120 including a first surface 120a and The first surface 120a is opposite to the second surface 120b, and the metal plate 120 has a plurality of the first surface 120a and the second surface 099146333. Form No. A0101 Page 11 / Total 27 Page 0992079677-0 [0022] 201227788 [0023] [0025] [0027] [0027] 1 20b through hole 121. Step S20' provides at least one electron emitter, and at least one electron emitter 110 is disposed corresponding to each of the through holes 121 of the metal plate 120. The method of disposing at least one electron emitter 110 corresponding to each of the through holes 121 of the metal plate 120 specifically includes the following steps: Step S21, providing a field emission wire supply device for continuously providing the field emission wires 1101. The field emission wire 1101 supply device includes a needle tube 202, and the needle tube 202 has a needle 2〇4' to insert a field emission rod] into the needle tube 202, and the field emission wire 11〇1 One end is exposed from the needle 204 of the fistula 2〇2. The inner diameter of the needle tube 202 can be selected according to the diameter of the field emission wire 丨1〇, and the outer diameter can be selected according to the size of the through hole 121. Preferably, the inner diameter of the needle tube 202 is 5 to 10 times the diameter of the field emission wire 11〇1 to reduce the friction between the needle tube 2〇2 and the field emission wire u〇i. The field emission wire _ can continuously extend from the needle 204. It can be understood that the field emission wire feeding device may further include a robot arm (not shown), and an auxiliary device such as a computer (not shown) to realize automatic continuous production. In the present embodiment, the supply means of the field emission material 1101 is a syringe having a needle tube 2Q2, the needle of which is ground to a flat surface. The field emission wire 1101 is flexible and self-supporting, macroscopically operable, and can be used as an electron to be emitted. The field emitter 1101 is cut to obtain a plurality of electron emitters 11A. In the embodiment, the field emission wire 1101 is a nano carbon line structure. Example 099146333 Form No. A0101 Page 12 of 27 0992079677-0 201227788 [0029] [0029]
步驟S22,對應所述金屬板⑵的每個通孔⑶設置所述 場發射線材11G1，«所述電子發射體U〇e 將該針管2〇2從第二表叩⑽依次穿過所述金細獅 通孔121 ’同時不斷提供場發射線材1101，將所述場發射 線材mm針頭2G4露出的_端通過焊接、黏結等方式固 定於該金屬板12G的第-表面12Ga，本實施例巾，所述場 發射線材1101從針頭204露出的-端通過黏結劑固定於第 一表面120a。然後將針管2〇2從通孔121中拉出第二表面 120b。Step S22, the field emission wire 11G1 is disposed corresponding to each through hole (3) of the metal plate (2), and the electron emitter U〇e sequentially passes the needle tube 2〇2 from the second surface (10) through the gold The lion hole through hole 121' is continuously provided with the field emission wire 1101, and the _ end of the field emission wire mm needle 2G4 is fixed to the first surface 12Ga of the metal plate 12G by welding, bonding, or the like. The end of the field emission wire 1101 exposed from the needle 204 is fixed to the first surface 120a by an adhesive. The needle tube 2〇2 is then pulled out of the through hole 121 from the second surface 120b.
[0030]將該場發射線材1101拉出通ki?i一定長度後切斷。具體 的，可將所述場發射線材1101—拉出通孔121後就立即切 斷，即所述場發射線材n〇l的切斷位置與所述第二表面 120b的平齊’通孔121内的場發射線材i nn形成所述電 子發射體110的電子發射端，所述電子發射端位於通孔 121内’並且該電子發射端與所述第表齑i2〇b平齊。另 外，也可將所述場勞射線材11〇1拉出第二表面12〇b一定 長度後再切斷形成朗述電子發射體110，因此所述電子發 射體110貫穿所述通孔121，所述電子發射體11〇的電子 發射端延伸出第二表面120b並向遠離金屬板120的方向延 伸。所述將場發射線材1101切斷的方法可為機械切割、 鐳射掃描、電子束掃描、通電流後鐳射輔助定點熔斷。 優選的，本實施例中所述電子發射體110的電子發射端延 伸出所述第二表面120b，且延伸出第二表面120b的部份 具有相同的長度。 099146333[0030] The field emission wire 1101 is pulled out of the pass ki?i for a certain length and then cut. Specifically, the field emission wire 1101 can be cut off immediately after being pulled out of the through hole 121, that is, the cutting position of the field emission wire n〇1 and the flushing through hole 121 of the second surface 120b. The field emission wire i nn is formed to form an electron emission end of the electron emitter 110, the electron emission end is located in the through hole 121' and the electron emission end is flush with the first surface 齑i2〇b. In addition, the field radiation material 11〇1 may be pulled out of the second surface 12〇b for a certain length and then cut to form the outline electron emitter 110. Therefore, the electron emitter 110 penetrates the through hole 121. The electron emission end of the electron emitter 11A extends out of the second surface 120b and extends away from the metal plate 120. The method for cutting the field emission wire 1101 may be mechanical cutting, laser scanning, electron beam scanning, and laser-assisted fixed-point melting after current. Preferably, in this embodiment, the electron emitting end of the electron emitter 110 extends beyond the second surface 120b, and the portion extending from the second surface 120b has the same length. 099146333
步驟S23，重複上述步驟，以使所述場發射線材11〇1對應 表單編號A0101 第13賓/共27 I 0992079677-0 [0031] 201227788 金屬板120的每個通孔121設置，形成電子發射體HQ， 可以理解，也可在每個通孔121中設置複數電子發射體 110 〇 [0032] 步驟S30 ’提供一基底130，將所述金屬板120的第一表 面120a貼附於所述基底130 —表面。 [0033] 首先，提供一基底130 ’在所述基底130的一表面塗覆一 層黏結劑’形成一黏結層1 4 0。所述黏結劑可為環氧黏合 劑等。 [0034] 其次’將所述金屬板1 20的第.一表面1 20.a貼附於所述基底 130塗覆有黏結劑的表面，固化後形成一體結構。 [0035] 由於所述第一表面12〇a貼附有電子發射體11〇的一端，因 此在貼附的過程中，所述電子發射體11〇的一端一方面緊 密貼附於金屬板120的第一表面120a，另一方面通過黏結 層140與基底130緊密結合’即所述金屬板120與基底13〇 將所述電子發射體110的一端牵固的夾輿於二者之間。而 . ... ........... ..' ... 金屬板120的第一表面120夺中奏貼附有電子發射體11〇的 部份表面則通過黏結層與基底13〇緊密連接在一起。 [0036] 步驟S40 ’在每個設置有電子發射體11()的通孔12ι内填 充填充物123，以使電子發射體11〇固定於通孔丨21内， 形成所述場發射陰極裝置1〇〇。 [0037] 099146333 所述填充物123為導電導熱材料，如錫等，所述填充可通 過一工具如針管等將熔融態的填充物123填充入所述通孔 121内’所述填充的深度不限’優選的，所述填充物123 填滿整個通孔121，並且在填充的過程中，儘量保持所述 表單編號A0101 第14頁/共27頁 0992079677-0 201227788 電子發射體11 〇基本位於所述通孔121的中間位置，從而 使得填充物123圍繞所述位於通孔丨21内電子發射體110 的側壁均勻分佈’進而提高二者的接觸面積’提高導熱 能力’使得該電子發射體11〇在場發射過程中產生的熱量 可以有效地被傳導出去，並且可以承受較強的電場力。 進一步的’所述填充物123應確保所述電子發射體no的 電子發射端延伸出所述填充物123遠離基底13{)的表面， 從而保證電子發射體11〇能夠發射電子。 [0038] Ο 更進一步的，在步驟S40之後，可包括一將電子發射體 Π 0的延伸出第二表面12 〇 b的一瑜進行充分锻燒的步驟。 所述煅燒可利用酒精燈火焰等對所述電子發射體丨1〇的延 伸出第二表面120b的一端烘烤。這時，所述電子發射體 11 0的延伸出第二表面120b的奈米碳管線會在高溫火焰中 燃燒掉，但由於奈米碳管線優良的導熱性，奈米碳管線 靠近金屬板120的第二表面120b的部份會有一定長度的奈 米碳管線保留下來。該長度與火焰的溫度和氧化氣氛、 奈米碳管線的直徑、及金屬板120的導熱性有關，所述火 焰的溫度可為4〇(TC〜900°C。當這些條件固定後，燃燒 後保留的奈米碳管線長度即確定，從而可以形成保留長 度基本一致的奈米碳管線作為電子發射端。本實施例中 ，奈米碳管線的直徑為50微米，所述金屬板為厚度為lmm 的銅板，所述火焰的溫度為45(TC，燃燒後奈米碳管線從 金屬板第二表面延伸出的長度為0.5mm。所述奈米碳管線 經過煅燒之後，可以減少場發射陰極裝置工作過程中奈 米碳管線中奈米碳管的受熱揮發或您斷，影響場發射的 099146333 表單編號A0101 第15頁/共27頁 0992079677-0 201227788 穩定性，並且所述電子發射端的長度基本相同，從而可 提高場發射過程中的均勻性。 [0039] [0040] [0041] [0042] [0043] [0044] [0045] [0046] [0047] [0048] 綜上所述’本發明確已符合發明專利之要件，遂依法提 出專利申請。惟，以上所述者僅為本發明之較佳實施例 ’自不能以此限制本案之申請專利範圍。舉凡習知本案 技藝之人士援依本發明之精神所作之等效修飾或變化， 皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 圖1為本發明實施例提供的場發射陰極裝置之結構示意圖 〇 圖2為圖1所示的場發射陰極嚷置沿11 -11線之剖視圖。 圖3A、圖3B為本發明實施例提供的場發射陰極裝置中電 子發射體之電子發射端與金屬板的位置關係示意圖。 圖4為本發明實施例提供的場發射陰極裝置中通孔内設置 有複數陰極發射體之剖視罔。 圖5為本發明實施例提供的場發衫陰極裝置之製備方法的 流程圖。 圖6為本發明實施例提供的場發射陰極裝置之製備方法示 意圖。 【主要元件符號說明】 場發射陰極裝置：100 電子發射體：110 第一部份：110a 099146333 表單編號A0101 第16頁/共27頁 0992079677-0 201227788 [0049]' 第二部份：110b [0050] 第三部份：110c [0051] 金屬板：120 [0052] 第一表面：120a [0053] 第二表面：120b [0054] 通孔：121 [0055] 填充物：123 [0056] 基底：130 [0057] 黏結層：140 [0058] 針管：202 [0059] 針頭：204 [0060] 場發射線材：1101 Ο 099146333 表單編號Α0101 第17頁/共27頁 0992079677-0In step S23, the above steps are repeated such that the field emission wire 11〇1 is disposed corresponding to each through hole 121 of the form number A0101 13th/total 27 I 0992079677-0 [0031] 201227788 metal plate 120 to form an electron emitter. HQ, it can be understood that a plurality of electron emitters 110 can also be disposed in each of the through holes 121. [0032] Step S30' provides a substrate 130 to which the first surface 120a of the metal plate 120 is attached. -surface. [0033] First, a substrate 130' is coated on a surface of the substrate 130 with a layer of a binder to form a bonding layer 140. The binder may be an epoxy adhesive or the like. [0034] Next, the first surface 1 20.a of the metal plate 120 is attached to the surface of the substrate 130 coated with a binder, and is solidified to form a unitary structure. [0035] Since the first surface 12〇a is attached with one end of the electron emitter 11〇, one end of the electron emitter 11〇 is closely attached to the metal plate 120 on the one hand in the attaching process. The first surface 120a, on the other hand, is tightly bonded to the substrate 130 by the bonding layer 140, that is, the metal plate 120 and the substrate 13 are sandwiched between the ends of the electron emitter 110. And . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The substrates 13 are tightly joined together. [0036] Step S40' is filled with a filler 123 in each of the through holes 121 provided with the electron emitter 11 (), so that the electron emitter 11 is fixed in the through hole 21, and the field emission cathode device 1 is formed. Hey. [0037] 099146333 The filler 123 is an electrically and thermally conductive material, such as tin or the like, and the filling may fill the molten filler 123 into the through hole 121 by a tool such as a needle tube or the like. Preferably, the filler 123 fills the entire through hole 121, and during the filling process, the form number A0101 is read as much as possible. Page 14/27 pages 0992079677-0 201227788 The electron emitter 11 is basically located in the The intermediate position of the through hole 121 is such that the filler 123 is uniformly distributed around the sidewall of the electron emitter 110 in the through hole 21 to further increase the contact area of the two to improve the thermal conductivity so that the electron emitter 11〇 The heat generated during field emission can be effectively conducted out and can withstand strong electric field forces. Further, the filler 123 should ensure that the electron-emitting end of the electron emitter no extends out of the surface of the filler 123 away from the substrate 13{), thereby ensuring that the electron emitter 11 is capable of emitting electrons. [0038] Further, after step S40, a step of fully calcining the electron emitter Π 0 extending from the second surface 12 〇 b may be included. The calcination may be baked at one end of the electron emitter 丨1〇 extending to the second surface 120b by means of an alcohol lamp flame or the like. At this time, the nano carbon pipeline of the electron emitter 11 extending from the second surface 120b is burned in a high temperature flame, but due to the excellent thermal conductivity of the nanocarbon pipeline, the nanocarbon pipeline is close to the metal plate 120. A portion of the surface 120b of the second surface 120b retains a certain length of the carbon carbon line. The length is related to the temperature of the flame and the oxidizing atmosphere, the diameter of the carbon nanotube, and the thermal conductivity of the metal plate 120. The temperature of the flame may be 4 〇 (TC to 900 ° C. When these conditions are fixed, after burning The length of the retained nanocarbon pipeline is determined, so that a nanocarbon pipeline having a substantially uniform retention length can be formed as an electron emission end. In this embodiment, the diameter of the nanocarbon pipeline is 50 micrometers, and the thickness of the metal plate is 1 mm. The temperature of the flame is 45 (TC, the length of the nano carbon pipeline after combustion from the second surface of the metal plate is 0.5 mm. After the carbon nanotube is calcined, the field emission cathode device can be reduced. During the process, the carbon nanotubes in the carbon nanotubes are heated or volatilized, affecting the field emission of 099146333 Form No. A0101, page 15 / 27 pages 0992079677-0 201227788 stability, and the length of the electron-emitting end is basically the same, Thereby, the uniformity in the field emission process can be improved. [0040] [0044] [0048] [0048] [0048] In summary, the present invention has indeed Compliance with invention patents The patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, which is not intended to limit the scope of the patent application of the present invention. Those skilled in the art will be able to do the same according to the spirit of the present invention. Equivalent modifications or variations are intended to be included in the following claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing the structure of a field emission cathode device according to an embodiment of the present invention; FIG. 2 is a field emission cathode shown in FIG. FIG. 3A and FIG. 3B are schematic diagrams showing the positional relationship between the electron-emitting end of the electron emitter and the metal plate in the field emission cathode device according to the embodiment of the present invention. FIG. 4 is a schematic diagram of the embodiment of the present invention. FIG. 5 is a cross-sectional view of a method for preparing a field hairpin cathode device according to an embodiment of the present invention. FIG. Schematic diagram of the preparation method of the field emission cathode device. [Main component symbol description] Field emission cathode device: 100 electron emitter: 110 Part 1: 110a 099146333 Single No. A0101 Page 16 / Total 27 Page 0992079677-0 201227788 [0049] 'Part II: 110b [0050] Part III: 110c [0051] Metal Plate: 120 [0052] First Surface: 120a [0053] Second surface: 120b [0054] Through hole: 121 [0055] Filler: 123 [0056] Substrate: 130 [0057] Adhesive layer: 140 [0058] Needle: 202 [0059] Needle: 204 [0060] Field emission Wire: 1101 Ο 099146333 Form number Α 0101 Page 17 / Total 27 0992079677-0