201210308 六、發明說明： 【發明所屬之技術領域】 本發明係有關一種感測器裝置。 【先前技術】 自以在敲案有sm赫之構成的物體辨識感測器（ 日本國專射請公開號6·〇44398Α (以 。此物體辨識感測器係具備有：# & ; 用力町出先束〇：的發光元件501 、光束整形用的透鏡5〇2、將光束α進行二維掃描用的光掃 描_、受光凡件5G4、掃描器驅動電_5、 理部506。 亡述的發光元伽丨係利料導體雷射元件或發光二 ^等所構成，又，光束整形用的透鏡5()2係為將從發光元 件501射出的光束α聚光或校準化而設置。 光掃描器5〇3係由振動板511和壓電元件Μ2所構成。振 動板511係利用秒W的薄板材所形成，且在以彎曲變形模式 及扭轉雙形換式共振之軸狀的彈性變形部（扭杆）犯的一 t設置掃描部514，而在另一端設置振動輪入部515。此掃 4田部514的表面係透過施予鏡面加工而形成鏡面（未圖示） 又在振動輪入部51接合積層型的壓電元件犯。因此， 振動板511係在振騎人部5丨5被讀於壓電树512，掃描 部5】4係被彈性變形部513所支持。 又，受光元件504係利用光電二極體等所構成。 掃4田器驅動電路5〇5係將使頻率和彈性變形部513 之f曲受形杈式的共振頻率相同之交流電壓Vb 、與頻 率和扭轉模式的共振頻率相同之交流電壓％⑴重疊 而成的電壓v⑴，施加於壓電元件512。因此，彈性變形 4/40 201210308 部513係同時進行彎曲變形模式的振動和扭轉變形模式的 振動，並使掃描部514上下左右地旋動（圖u中之％方=的 旋動是上下方向的旋動’ θτ方向的旋動是左右方向的旋動） 。其結果，光掃描器503可在二維的掃描區域5〇7内連續地 掃描從發光元件501所射出的光束α。 ' 又’由於上述的物體辨識感測器藉由檢測朝壓電元件 512施加的電壓V (t)可獲知光束α的掃描角（或，掃描部 514的偏轉角）’所以將朝壓電元件512施加的電壓值Vb (t )，vT (t)做為掃描角資訊（或，偏轉角資訊）51〇，由掃 描器驅動電路505朝信號處理部50(5輸出。 又，在此物體辨識感測器中，當光束^^的掃描區域5〇7 存在有物體508時’則從發光元件501射出且被光掃描器5〇3 掃描的光束α係射入物體508的表面並反射，而在物體5〇8 反射的散射光被受光元件504所接收而檢測出有物體5〇8存 -在。此處，在物體辨識感測器中，受光元件5〇4的受光信號 509被輸入彳§號處理部506。然後，當信號處理部506接收來 自於受光元件504的受光信號509時，則讀取其瞬間的掃描 角資訊510，將此變換成座標以檢測物體5〇8的二維位置。 此外，文獻1記載著可將物體辨識感測器使用在讀碼襞 置或人體松測感測益、一維光電感測器等領域之要點。 然而’在如圖11所示之構成的物體辨識感測器那種感 測器裝置中’由於以發光元件501和透鏡502及光掃描器 503所構成之光學系的光軸與受光元件5〇4的光軸不同（存 在於各自獨立的光路徑），所以受光元件504容易受干擾光 的影響，致使感測器裝置全體大型化。 【發明内容】 5/40 201210308 本發明乃有鑒於上述事由而完成者，其目的在於提供 一種不易受干擾光影響，且可小型化的感測器裝置。 本發明的感測器裝置係具備.構成為用以射出^貞測用 雷射光之偵測用雷射；構成為用以使前述偵測用雷射光朝 偵測對象空間側反射之光學反射鏡；及構成為用以檢測在 前述偵測對象空間側反射的前述偵測用雷射光之光檢測部 。感測器裝置進一步具備半鏡，此乃配置成用以分別使射 入於該半鏡的前述偵測用雷射光之一部分及剩餘部分反射 及透射。前述光學反射鏡係由具備可動部及設置在此可動 部上的鏡面之MEMS裝置所構成。光學反射鏡配置成：使 來自於前述半鏡的前述偵測用雷射光藉由前述鏡面而朝前 述禎測對象空間側反射，且使在前述偵測對象空間侧反射 的前述偵測用雷射光藉由前述鏡面而反射至前述光檢測部 =、。並使前述偵測用雷射與前述光學反射鏡之間的光軸及 刚述光學反射鏡與前述光檢測部之間的光軸，在前述光學 反射鏡與前述半鏡之間一致。 .在一實施形態中，感測器裝置進一步具備判斷部，其 =構成為依據前述光檢測部的輪出，判斷前述偵 間内有無物體。 帝射只5恶中’則述半鏡係配置成：從前述制用 田射射出的前述偵測用雷射光之一 前述光學反射鏡反射，日，义 ° θ 、f #、al .且在削迷偵測對象空間側反射的前 =測用魏細—部分會透料半鏡鋪人前述光檢測 在一實施形態中，感測器 述偵測對象空間内之顯示部； 裝置進一步具備：配置在前 構成為射出用以在前述顯示 6/40 201210308 部進行規定顯示之顯示用雷射光的顯示用雷射；及位在前 述價測用雷射與前述半鏡之間的分光鏡。分光鏡係構成為 、.從前述顯示用雷射射出的前述顯示用雷射光會藉由該分 光在兄而朝$述半鏡側反射，且來自於前述偵測用雷射的前 述偵測用雷射光會透射該分光鏡。 在—實施形態中，感測器裝置進一步具備透鏡，其係 位在前述半鏡與前述光檢測部之間，用以將前述偵測用雷 射光聚光於前述光檢測部的受光面。又前述透鏡係配置在 相對於前述顯示部呈成像關係的位置。 在—實施形態中，前述顯示部係由使前述偵測用雷射 光與前述顯示用雷射光雙方復歸反射(retroreflect)之螢幕構 成。 在—實施形態中，感測器裝置進一步具備遮光用構件 ’其係配置在前述偵測用雷射光及前述顯示用雷射光的光 路徑之周邊，用以遮蔽漫射光。 在—實施形態中，感測器裝置進一步具備框體，其係 用以收納前述偵測用雷射、前述半鏡、前述光學反射鏡、 前述光檢測部、前述顯示用雷射、前述分光鏡、前述透鏡 、及前述遮光用構件。又，前述框體的内面係散射前述漫 射光的粗糙面。 本發明的感測器裝置不易受千擾光影響且可小型化。 【實施方式】 接著，詳細記述本發明的較佳實施形態。本發明其他 特徵及優點係藉由參照以下詳細的記述及所附的圖式而可 被更清楚理解。 以下，一邊參照圖1〜8—邊說明本實施形態的感浪yi 7/40 201210308 裝置。感測器裝置係具備：構成為射出偵測用雷射光lB1 的偵測用雷射40〗；構成為使偵測用雷射光lB]朝偵測對 象空間侧405反射的MEMS反射鏡403;及構成為檢測（受 光）在偵測對象空間側405反射的偵測用雷射光lbi的光 檢測部（受光部）404。感測器裝置進一步具備有半鏡（分 光鏡）402 ’此乃配置成分別使射入於半鏡402的偵測用雷 射光LB1之一部分（典型的是一半）及剩餘部分（典型的 是另一半）反射及透射。在圖1A〜1D中，半鏡402係配 置成：從偵測用雷射401射出的偵測用雷射光LB1之一部 分會藉由半鏡402 (更詳言之，僅藉由半鏡402)而朝光學 反射鏡403反射’且在偵測對象空間405側反射的傾測用 雷射光LB1的一部分會透射半鏡402並射入光檢測部， 404。MEMS 反射鏡 403 係 MEMS( micro electro mechanical systems，微機電系統）裝置，且具備有可動部2〇 (參照圖 3、圖4、圖5F)、及設置在可動部20的鏡面21 (參照圖>3、 圖5F)。又，MEMS反射鏡403係配置成：使來自於半鏡 402的偵測用雷射光LB 1藉由鏡面21而朝偵測對象空間 405側反射，且使在偵測對象空間405反射的偵測用雷射光 LB1至少藉由鏡面2]反射至光檢測部404側。在圖1A〜 1D中，MEMS反射鏡403係配置成：使在半鏡402反射的 偵測用雷射光LB1藉由鏡面21反射至偵測對象空間405 側’又將偵測對象空間405内的物體（在圖1所示的例子 中是手指）406或在後述的顯示部410反射的偵測用雷射光 LB1藉由鏡面21 (詳言之，僅藉由鏡面21)反射至光檢測 # 404侧。光檢測部404係隔著半鏡402而位在MEMS反 射鏡403的相反側。因此，光檢測部4〇4係檢測在偵測對 8/40 201210308 象空間405内的物體406或顯示部4〗0反射後並藉由MEMS 反射鏡403反射之偵測用雷射光LB1。感測器裝置進一步 具備做為選項的判斷部408，其係構成為依據光檢測部4〇4 的輸出’判斷偵測對象空間405内有無物體406。此處，光 檢測部404係檢測透射半鏡402的偵測用雷射光LB1。再 者’本實施形態中，MEMS反射鏡403係構成光學反射鏡。 此外，感測器裝置係使偵測用雷射401與MEMS反射 鏡403之間的光軸0A1及MEMS反射鏡403與光檢測部 404之間的光軸〇A2，在MEMS反射鏡403與半鏡402之 間一致。 又，感測器裝置具備：配置在偵測對象空間4〇5内的顯 示部’構成為射出用以在顯示部進行規定顯示之顯示用雷 射光LB2的顯示用雷射411 ;及位在偵測用雷射LB1與半鏡 402之間的分光鏡412。此分光鏡412在光學上是設計成：從 顯示用雷射411射出的顯示用雷射光LB2會藉由分光鏡412 而朝半鏡402側反射’且來自於偵測用雷射4〇1的偵測用雷 射光LB1會透射分光鏡412。 又’半鏡402在光學上是設計成：使偵測用雷射光[Β1 的一部分透射並將剩餘部分反射。因此，.半鏡402在光學 上是設計成具有：將自偵測用雷射401射出的偵測用雷射 光LB1朝MEMS反射鏡403側反射的機能；及將在偵測對 象空間405内的物體406或顯示部410反射並藉由MEMS 反射鏡403反射的偵測用雷射光LB1透射的機能。又，半 鏡402在光學上是設計成：使來自於顯示用雷射411的顯 示用雷射光LB2朝向規定方向（MEMS反射鏡403側）反 射。總之’半鏡402係在MEMS反射鏡403側設有使镇測 9/40 201210308 用雷射光LB1的一部分反射且使剩餘部分透射的半透射 層，此半透射層係兼做為反射顯示用雷射光LB2的波 擇層。 偵測用雷射401係使用射出做為偵測用雷射光Lm的 紅外光之第1半導體雷射。又，顯示用雷射411係使用射 出做為顯示用雷射光LB2的紅色光之第2半導體雷射。 此外，圖1B中之實線的箭號係顯示從偵測用雷射4〇1 射出的偵測用雷射光LB1朝向偵測對象空間的行進路 徑，圖1C中之實線的箭號係顯示在顯示部410反射的偵測 用雷射LB1的行進路徑，圖1D中之實線的箭號係顯示從 顯示用雷射411射出的顯示用雷射光LB2迄至顯示部41〇 為止的行進路徑。 而在感測器裝置中，藉由朝顯示用雷射411供給電力 的第2電源的ΟΝ/OFF(開/關）或能率比控制，可容易地進行 顯示用雷射411的閃爍、調光，可使顯示部41〇顯示規定 的像（例如，圖9所示那種假想開關440的像）。又，感測 器裝置係在使像顯示於顯示部410用的光學系和在偵測物 體406用的光學系上共用半鏡4〇2，所以能削減零件數量， 且能謀求小型化及輕量化。 又，光檢測部404係對紅外光具有感度的光電二極體， 且其輸出會因應於受光光量而變化。因此，在感測器裝置 中’因應於價測用雷射光LB1的光路徑上有無物體406， 在偵測對象空間405内反射偵測用雷射光LB1的反射面的 反射率會產生變化，因而光檢測部404的受光光量會變化。 亦即’由於在偵測對象空間405中的偵測用雷射光LB1之 光路徑上不存在物體406之情況’反射面的反射率是依據 10/40 201210308 顯不部410來決定’且在偵測對象空間405中的偵測用雷 射光LB1之光路徑上存在有物體406之情況.，反射面的反 射率是依據物體406來決定，所以光檢測部404的受光光 量會因應於反射面之反射率的差而變化。 又’感測器裝置係具備位在半鏡402與光檢測部404 之間的透鏡407。此處，透鏡407係將檢測透射半鏡402的 偵測用雷射光LB 1聚光於光檢測部404的受光面404a。 透鏡407係雙凸透鏡，配置在相對於顯示部41〇呈成 像關係的位置。總之，透鏡407係如圖6A所示，在债測用 雷射光LB1的光路徑上不存在物體406的情況，其係被配 置成：成像面在光檢測部404的光軸方向與光檢測部404 的受光面404a —致’在光檢測部404的受光面404a的位 置，偵測用雷射光LB1的光點徑成為最小光點徑。因此， 如圖6B所示，在偵測用雷射光LBi的光路徑上存在有物 體406的情況’光檢測部404的光軸方向之成像面的位置 偏離。其結果’由於偵測用雷射光LB1在光檢測部4〇4上 的像414 (參照圖6C)擴大（所謂的像高變化，換言之， 未對焦而產生模糊）’所以可加大依據物體4〇6之有無所致 光檢測部404的受光光量之變化。例如，設光檢測部404 的受光面404a的直徑是imm，且如圖6A，偵測用雷射光 LB1的光路徑上不存在物體4〇6的情況之像高是lmm，且 如圖6B’偵測用雷射光LB1的光路徑上存在有物體406的 情況之像南是2mm時，在光檢測部404的受光光量會驟 減。因此’即使在物體4〇6的反射率和顯示部410的反射 率之差是較小的情況，依據物體406之有無所致受光光量 之變化仍變大。 11/40 201210308 此外，做為顯不部41〇，在使用偵測用雷射光ΕΒ1的 ^射光之輝度會隨魏伯餘弦定律（Lambert’s cosine law) ^的踅幕（亦即，顯示部410會對偵測用雷射光LB1進 盯朗伯反射的螢幕）之情況，由於不存在物體梅的情泥 之光核測部404的受光光量小，且依據物體4〇6之有無所 致之光，測部404的受光光量之變化小，故S/N比變小。 广*於是，顯示部410係以利用對偵測用雷射光lB1進行 復，反射的螢幕構成者較佳。總之，做為構成顯示部物 ，螢幕，以使用所謂復歸性反射螢幕者較佳。復歸性反射 螢幕係使反射光朝和射入光相同方向射出的螢幕，具有高 反射指向性。因此，若使用復歸性反射螢幕做為顯示部 410，則可加大在不存在物體4〇6的情況下之光檢測部姻 的文光光量，成為可加大基於物體4〇6之有無所致光檢測 部404的受光光量之變化，成為可加大S/N比。據此，在 感測益裝置中’可提升光檢測部404輸出的s/Ν比，可謀！ 求提升物體406的偵測精度。 做為復歸性反射螢幕等所用的復歸性反射體，可知有 將用以使光折射的玻璃串珠作二維地排列的反射片或將用 以使光折射的棱柱透鏡等作二維地排列的反射片等（此 外’有關此種的反射片，例如，參照http : //www.kokusaku.com/3M.htm )。 MEMS反射鏡403如圖3、圖4及圖5F所示，係具備 使用屬半導體基板的SOI ( Silicon on Insulator,絕緣體上石夕 晶）基板100所形成且在可動部20上設有鏡面21而成的 反射鏡形成基板1。又’ MEMS反射鏡403係具備第1蓋 基板2 ’該弟1蓋基板2被接合在反射鏡形成基板1中設有 12/40 201210308 鏡面21的一表面（第1面）側。又，MEMS反射鏡4〇3係 具備被接合在反射鏡形成基板1的其他表面（第2面）側 之第2蓋基板3。 反射鏡形成基板1係利用批量微加工(bulkmicr〇 machining)技術等加工上述的s〇l基板1〇〇而形成。此s〇j 基板100係在具有導電性的第丨矽層（活性層）1〇〇a與第 2石夕層（石夕基板）l〇〇b之間介設有絶緣層（Si〇2層）1〇〇c。 此外’SOI基板100雖將第1矽層i〇〇a的厚度設為3〇#m， 第2石夕層〗00b的厚度設為400//m，但彼等數值是一例， 並未特別限定。又，屬於SOI基板1〇0的一表面（第丨面）、 即第1矽層10a的表面係做為（1〇〇)面。 反射鏡形成基板1係具有：外側框部1〇、配置在外側 框部10内側之上述的可動部2〇、以及在外側框部1〇内側 以包夾可動部20的形式配置且將外側框部1〇和可動部2〇 連結之一對弟1扭轉彈黃部3〇、30。各第1扭轉彈簧部3〇、 30係可扭轉變形。 外側框部10係框狀（在此為矩形框狀）的形狀，外周 形狀及内周形狀分別形成矩形狀。此處，MEMS反射鏡的 反射叙>形成基板1及各盘基板2、3各自的外周形狀是矩形 狀，各蓋基板2、3的外形尺寸與反射鏡形成基板丨的外形 尺寸一致。 又，第1蓋基板2係使用第丨玻璃基板2〇〇所形成， δ亥弟1玻璃基板200係藉由將分別由pyrex (註冊商標）玻 璃等構成的2片玻璃板在厚度方向重疊接合所形成。又， 第2盍基板3係使用第2破璃基板3〇〇所形成，該第2玻 璃基板300係由Pyrex (註冊商標）玻璃等構成。此外、第 13/40 201210308 1玻璃基板200及第2玻璃基板300的厚度雖是在〇.5mm 〜1.5mm左右的範圍作設定，但彼等數值是一例，並未特 別限定。 反射鏡形成基板1的外側框部10係使用SOI基板]00 的第1矽層100a、絶緣層100c及第2矽層100b而形成。 而且，反射鏡形成基板1的由外側框部1〇中的第1矽層丨〇〇a 所形成的部位係與第1蓋基板2的外周部遍及全周地接 合，而由外側框部10中的第2矽層l〇0b所形成的部位則 與第2蓋基板3的外周部遍及全周地接合。 又，反射鏡形成基板1的可動部2〇及各扭轉彈箬部 30、30係使用801基板100的第1矽層1〇〇3而形成，比起 外側框部ίο是相當薄。又’設置在可動部2〇的鏡面21係 用以反射來自於彳貞_雷射4G1的制用雷射光LB1及來 自於顯示用雷射411的顯示用雷射光LB2者，係由反射膜 2la的表面所構成，該反_ 2la的表面係由形成在可動部 2"利用第B夕層勘a形成的部位上之㈣屬膜(例二 A1-S!膜等）所成。此外，本實施形態中，雖將反射膜 的膜厚設定為5GG_ ’但此數值是—例，並未特別限 以下’如圖3的左側所示’將俯視中與— 彈簧部3G、3G的併設方向正交的方向設為X軸方向第轉] 方向）、一對第1扭轉彈箐邱如 μ ν ^ 1 〜…一 30的併設方向設為y軸 方向（弟2方向）、以及將與、軸方 勹乂釉 向設為z軸方向（第3方向）進行說明。 °正父的方 反射鏡形成基板1係於y轴方向併設 簧部3。、3。，可動部20成為可藉一對第 = 3〇的轉動而對外側框部1G變位（成為可繞y轴方 H/40 201210308 亦即，一對第1扭轉彈簧部3〇、30係以可動部2〇能對外 側框部1〇搖動自如的方式連結著外側框部1〇和可動部 °換&之，配置在外側框部]〇内側的可動部％係透過 自可動部20朝相反的兩個方向連續一體延伸的2個第i扭 轉彈簧部30、30而搖動自如地支持於外側框部1〇。此處， -對第1扭轉彈簧部3〇、3G係形成為：將兩者的沿著丫轴 方向之中心線彼此連結的直線在俯視中是通過可動部2〇的 重心。此外’各扭轉彈簧部3〇、3〇雖設定成厚度尺寸（z s由方向的尺寸）是3G"m，寬度尺寸U轴方向的尺寸）是 二二但鮮數值是-例，並未特職定。又，外側框部 的内周雜亦不限為㈣狀，例如，亦可為圓雜。 =述的反射鏡形絲板丨係具備在可動部⑼中分別形 成，人連結—對第1扭轉彈簧部％％ -轉彈簧部30、30的併設方向）正交之方=-對弟1 :向）的兩侧之梳狀的第！可動電極22、2;里、：x軸 鏡形成基板1係具備梳狀的第1 _電極12。^者，反射 从分別與第1可動電極22、22對 2 ’彼等係 ;卜側框部1。。各第1固定電極12係具有 ，極22的複數個可動梳齒片22b對向（鄰勺第1可動 ，片⑶。此處，利用第丨 /妾)的複數個固 ?㈣、u構成以靜電力來驅 22, 式的第1驅動手段。此外 。0的靜電驅動 雖係利用靜電力驅動可動部2〇v：^；，第]驅動手段 例如，可以是藉由電磁力 —限為靜電驅動式， 可以是藉―電元件驅動可動麵動式，亦 第1固定電極12係俯視形狀為==式。 且外观框部10 15/40 " 201210308 中沿著y軸方向的框片部中的利用第i秒層魏形成 位的二部分係構成梳骨部12a。而且，第】时電極12為 在=部12a中之與可動部2G的對向面（外側框部1〇中' 的沿軸方向之内側面)，多數個固定梳齒片⑶係沿 :對=1扭轉彈簧部30、30的併設方向排列設置。此處， 各固定=齒片12b係利用第h夕層觸部分所構成。 ^另一方面，第1可動電極22係在可動部2〇中之第^ 固足電=12的梳骨部12a側的梳骨部仏之側面（可動部 2又中沿著Υ轴方向之側面）’分別與固定梳齒片⑽對向的 二之個可動梳齒片22b係被排列設置於上述併設方向。此 处，各可動梳齒片225係利用第t矽層〗〇〇a的一部分所構 第1固定電極12和第1可動電極22的各個梳骨部 12a’22a相互對向，且第】固定電極12的各固定梳齒片 !2b装入第i可動電極22的梳溝（鄰接的可動梳齒片2孔、 22b間）’而固定梳齒片12b與可動梳齒片係在乂輛方 向相互7? 4。因此’第丨驅動手段中，藉由第1固定電極 12與第1可動電極22之間被施加電壓，在第1固定電極 U與.第1可動電極22之間會產生作用於彼此互拉方向的靜 電力。此外，y抽方向之固錢#片12b與可動梳齒片细 ^間的間隙，例如可在2㈣〜5"m左右的範圍適宜地設 此外’可動部20係具有：透過一對第丨扭轉彈簧部3〇、 3〇而搖動自如地支持於外側框部.1〇的框狀（在此為矩妒樞 狀）的可動框部23 ;配置在可動框部23内側且設置有鏡 21的反射鏡部24 ;在可動框部23州則以包炎反射 16/40 201210308 的形式配置轉可動框部23和反射 變形之-對第2扭轉彈菩部25、25 _ 24連結並可扭轉 ^扭轉彈簣部〜25係併設在與 惰设方^(y輛方向）正交的方向，轉彈簧部3〇、 動部20的—對第2扭轉彈箬部25輪方向）。總之， ^=24成為可藉一對第2扭轉彈菩：於X軸方向， 而對可動框部23變位（成為可繞χ輛方=5、25的轉動 -對第2扭轉彈*部25、以係以反射鏡;二動）。亦即’ =框部23搖動自如的方式連結著可動 可相對於可 24。換言之，配 # 23和反射鏡 此:Γ被摇動自如地支持於‘=第 著“二:=::5、25係形成為:將兩二沿 鏡部24的重心。此外，各第2 見==反射 度尺寸（z轴方向的尺寸）是3〇//|11，宽成厚 的尺寸）是30_，作彼箄γ从尺寸（>，軸方向 又，反射H Μ 皮4數值疋1 ’並未特別限定。 如，亦可21 __狀不限為矩形狀，例 為矩賴川 又，可動框部23的内周形狀亦不限 為巨形狀，例如，亦可為圓形狀。 彈箐=述1=可知，反射鏡部24係可繞一對第1扭轉 : 〇夂動、及可繞一對第2扭轉彈簧部25、25 ，動。、總之，MEMS反射鏡403係反射鏡部24的鏡面21 ，構成為可二維地旋動’可對偵測用雷射光LB1及顯示用 田射進行二維掃描。此處’可動部％係在可動框部 23的第1蓋基板2側之相反側上一體設置支持可動框鄱23 17/40 201210308 成為可和可動框 的框狀（矩形框狀）支持體29，支持體29 部23 —體地旋動。 又’反射鏡形成基板1係具備在反射鏡部中、， 形成在與連結一對第2扭轉彈簧部25、25的士二/分別被 〜石向（一餅筮 2扭轉彈簧部25、25的併設方向）正交之方向（亦艮 軸方向）的兩側之梳狀的第2可動電極27、π孝#、乂 2固定電極26、26。第2固定電極26、26 可，電極27、27對向（鄰接）的方式形成於可動框部^。 各第2固定電極26係具有和對向的第2可動電極” 數個可動梳齒片27b各自對向（鄰接）的複數個固定梳^ 片26b。而且，利用第2可動電極27、27和第2固定電二 26、26構成利用靜電力驅動反射鏡部24的靜電驅 2驅動手段。 "叭的罘 上述的第2固定電極26之俯視形狀是梳狀，梳骨部26& 係利用可動框部23的-部分構成。此外，在第2固定電極 26的梳骨部26a之與反射鏡部24的對向面（可動框部B 中沿f X軸方向之内側面），多數個固定梳齒片2讣係沿著 對第2扭轉彈簧部25、25的併設方向排列設置。另一方 面’〃第2可動電極27係利用反射鏡部24的一部分構成， 在第口疋黾極26之梳骨部26a側的側面（反射鏡部24 中，著’方向之側面）上，分聽固定梳齒片施對向 的夕數個可動梳齒片27b係排列設置於上述併設方向。此 狀的第2固定電極26與梳狀的第2可動電極27係 才二月邛26a、27a為相互對向，且第2固定電極26的各固 各才LU4片26b裝入第2可動電極27的梳溝（鄰接的可動梳 U 27b間），而固定梳齒片26b與可動梳齒片27b係在x 18/40 201210308 軸方向相互分離。因此，反射鏡形絲板丨係藉由第2固 疋屯極26與第2可動電極22之間被施加電壓而在第2固 定電極26與第2可動電極27之間產生作用於互拉的方向 之靜電力。此外，X軸方向中的固定梳齒片26b與可動梳齒 片27b之間的間隙，例如可在2//m〜5#m左右的範圍適 宜地設定。 又，反射鏡形成基板1係以於俯視中是呈在一直線上 排列的方式，將3個墊片13大略等間隔併設在外側框部1〇 上。相對地，第1蓋基板2係貫通設置有使各墊片13各別 露出的3個貫通孔202。各墊片〗3係俯視形狀為圓形狀， 且利用第1金屬膜（例如，A1_Si膜等）所構成。此外， 本貫施形態中，雖將各墊片13的膜厚設定為5〇〇nm，但此 數值是一例，並未特別限定。 反射鏡形成基板丨係在外側框部丨〇中的利用第1矽層 l〇〇a形成的部位形成複數個（在此為3個）狹縫丨加，且 在可動部20的可動框部23中的利用第丨矽層100a形成的 部位形成複數（在此為4個）個狹縫20a。據此，反射鏡形 成基板1的3個塾片13之中在圖3正中央的墊片i3(i3b) 係與第1固定電極12電性連接而成為同電位，右側的墊片 U ( 13a)與第1可動電極22及第2可動電極26電性連接 而成為同電位，左侧的墊片13 (；l3c)與反射鏡部24的第 2可動電極27電性連接而成為同電位。 此處，外侧框部10的複數個狹縫10a係形成到達絶緣 層100c的深度。本實施形態的MEMS反射鏡4〇3係一邊採 用藉由將各狹縫l〇a做成溝、各狹縫1〇a的俯視形狀做成 未對外側框部1 〇的外側面側開放的形狀而形成在外側镇部 19/40 201210308 10有狹縫H)a的構造，—邊防止降低外側 基板2之接合性，以確保被外側框部ω和各Μ板t 3 所包圍的"之氣密性。 板2 3 又，可動部20中的可動框部23之各狹縫2〇a係做成 溝’且形成珠度是到達由s〇I基板1〇〇之絶緣層廳的一 部分與第2 __的—部分所構成之上述的支持體29 中的絶緣層100c。總之’以MEMS反射鏡4〇3而言，係採 用在可動框部23形成有複數個狹縫施的構成，並且可動 框部23和支持體29係成為可繞—對第1扭轉彈菩部30、 30而-體地㈣。此處，支龍29 _成為覆蓋可動框部 23中除了各固定梳齒片施及各可動梳齒片22b以外的部 位之框狀（參照圖4)。又，可動框部23的複數個溝施的 形狀係以包含支持體2 9在内的可動部2 Q的重心在俯視中 是位在連結沿著-對第！扭轉彈簧部3()、％的y轴方向的 =心線的直線之大約正中央的方式作設計。而在本實施形 態的MEMS反射鏡4〇3 t，可動部2〇繞一對第】扭轉彈 簧部30、30且順暢地搖動，適正地進行反射光之婦描。此 外’本實施形態中’支持體29中利用第2石夕層職構成 的部位之厚度雖狀賴外娜部1G巾利用第2⑪層驅 構成^部位相同厚度，但不限為補，可設成較厚或較薄。 第1蓋基板2係如上述使用第！玻璃基板2〇〇，於第i $璃基板200的厚度方向貫通設置供各墊片13各別在全周 ^圍露出的3個貫通孔2〇2。此處，第！玻璃基板2〇〇的各 貫通孔202被形成為隨著離開反射鏡形成基板丨，開口面積 、、羡丨又交大的推拔狀。各貫通孔202係利用喷砂法形成。各 貫通孔202的形成方法不限為喷砂法，亦可採用鑽孔加工 20/40 201210308 法或姓刻法等。 又，ME1VIS /i 益 + & , _ ^ / 久射鏡403係做成：各墊片13的俯視形狀 成為圓形狀’在各貫通孔2G2的第1反射鏡形成基板1侧 Ipmb各㈣13的直徑還大 。各墊片13的直徑雖設 成二T二但並未特別限定。又，各墊片13的俯視形狀不 *疋而要TCffl形狀’例如，亦可做成正方形狀，但在將各 貝通孔202的開π梭作小的情況，圓形狀者係較正方形狀 為佳。 ^此外，在各墊片13的一部分是在厚度方向重疊於第1 蓋基板2的情況，擔心會有因各塾片13的厚度之影響而損 及接合性或氣紐而成為製造時之&轉低、動作穩定性 降低、經時穩定性降低的原因之虞。因此，在此種情況， 可想而知會衍生需增大外側框部丨〇的寬度尺寸（外侧框部 1 〇的外側面與内側面之距離），致使MEMS反射鏡403的 小型化受限。 相對地’在本實施形態的MEMS反射鏡403中，第1 蓋基板2未和各墊片13重疊，在第1蓋基板2與外側框部 ίο之間亦無介設各墊片13的一部分。因此，在mems反 射鏡403中，可防止第丨蓋基板2與反射鏡形成基板！的 外側框部10之接合被各墊片13所妨礙的情形。其結果， 在MEMS反射鏡403中，可防止因各墊片丨3的厚度之影 響而損及接合性或氣密性的情形，可在未增大外側框部1〇 的寬度尺寸下謀求因良率提升所達成之低成本化，同時可 抑制動作穩定性之降低及經時穩定性之降低。 又，在MEMS反射鏡403中，由於將反射鏡形成基板 1的外側框部1〇和各蓋基板2、3所包圍的氣密空間設辱真 21 /40 201210308 空（真空環境）’可一邊謀求低消耗電力化一邊加大可動部 20及反射鏡部24的機械偏轉角。於是，在MEMS反射鏡 403中’將上述氣密空間設成真空，並且在第2蓋基板3中 之與反射鏡形成基板1的對向面，在比接合於外側框部1〇 的部位還靠近内側的適宜部位上設置非蒸發型的標靶（未 圖不）。此外，非蒸發型的標靶只要是利用例如以Zr為主 成分的合金或以Ti為主成分的合金等形成即可。又，以 MEMS反射鏡403而言，亦可將被外側框部1〇、第〗蓋基 板2及第2蓋基板3所包圍的上述氣密空間做成惰性氣體 環境（例如，乾燥氮氣環境等以上述的MEMS反射鏡 403而言，由於將上述氣密空間做成真空環境和惰性氣體環 境任一者，都可防止鏡面21的氧化，故鏡面21的材料之 選擇性變多，而且能抑制鏡面21之反射特性的經時變化。 第1玻璃基板200係在與反射鏡形成基板1之對向面 具有第1凹部20卜用以確保可動部2〇的變位空間。此處， 第1玻璃基板200係如上述將2片玻璃板接合而形成。於 是，第〗玻璃基板200係配置在離反射鏡形成基板丨近侧 的玻璃板（以下，稱為第1玻璃板）中之對應於第1凹部 201的部位，形成貫通厚度方向的開孔部，將配置在離反射 鏡形成基板1遠側的玻璃板（以下，稱為第2玻璃板）做 成平板狀。因此，第1玻璃基板200與利用喷砂加工等而 形成第1凹部201者相較下，係可將第1凹部201的内底 面做成平滑的表面，能減低在第1凹部201的内底面之擴 散反射、光擴散、散射損失等。 又’弟2盖基板3係在弟2玻璃基板300中的反射鏡 形成基板1侧的上述一表面形成第2凹部301，用以確保可 22/40 201210308 動部20的變位空間。 此處，於第2玻璃基板300的上述一表面（第1面） 形成凹部301的情況，例如，利用喷砂法等形成即可。又， 有關第2蓋基板3’亦可和第1蓋基板2同樣是將2片玻璃 板接合而形成，於配置在接近反射鏡形成基板1那側的玻 璃板（以下，稱為第3玻璃板）之對應第2凹部301的部 位形成貫通厚度方向的開孔部，並且將配置在離反射鏡形 成基板1遠的那側的玻璃板（以下，稱為第4玻璃板）做 成平板狀亦可。此外，第2蓋基板3由於無需讓光透射， 所以不限為第2玻璃基板300,只要是以可容易與反射鏡形 成基板1接合且與屬半導體基板（SOI基板]〇〇)的材料的 Si之線膨脹率差小的材料所形成的基板即可，例如’可使 用矽基板形成，此情況的第2凹部301只要是利用光微影 技術及蝕刻技術形成即可。 又，在本實施形態的MEMS反射鏡403中，由於藉由 將由外側框部10和第丨蓋基板2及第2蓋基板3所包圍的 氣始、空間設成真空，可謀求低消耗電力化並加大可動部20 的機械偏轉角，所以將上述氣密空間設成真空，並在第2 凹部301的内底面配置著上述的標靶。 此外’本實施形態中，第1蓋基板2及第2蓋基板3 的厚度雖設定在〇.5mm〜1.5mm左右的範圍，而第1凹部 及第2凹部301的殊度設定在3〇〇#m〜8〇〇#m的範 圍:但彼等數值是一例，只要是因應可動部20朝z軸方向 的=位夏作適宜設定即可（亦即，只要是不妨礙可動部20 之旋動運動的深度即可），並未特別限定。 做為各玻璃基板200、300的玻璃材料，雖採用屬p矽 23/40 201210308 皮离的Pyrex ( 5主冊商標），但不限為石朋石夕酸玻璃 ，例如， 亦可採用鈉鈣破璃、無鹼玻璃、石英玻璃等。 以下，針對MEMS反射鏡403的製造方法，一邊來昭 圖5-邊作說明，圖5A〜㈣表示和二 應的部分之概略剖面。 首先，進行分別在屬半導體基板的S〇I基板1〇〇的上 述:表面（第1面）側及上述其他表面（第2面）側利用 ’二、氧4匕法等形成發氧化膜llla、lllb的氧化膜形成步驟， 藉以獲得圖5A所示之構造。 之後，進行利用光微影技術及蝕刻技術將s〇I基板1〇〇 的士述一表面（第！面）側的矽氧化膜（以下，稱為第i 矽氧化版）111a圖案化的第i矽氧化膜圖案化步驟，藉以 獲侍圖5B所示之構造。此第]矽氧化膜圖案化步驟中，係 以和，1矽氧化膜llla當中之可動部2〇的反射膜2la之形 成預定區域以外的部分，以及和第i扭轉彈簧部3〇、3〇等 相對應的部位等會殘留的方式將第丨矽氧化膜丨丨^圖案化。 在第〗矽氧化膜圖案化步驟之後，進行在s〇I基板1〇〇 的^述一表面（第〗面）側以濺鍍法或蒸鍍法等方式成膜 規定膜厚（例如，5O0nm)的金屬膜（例如，A1—&膜）之 金屬膜形成步驟，利用光微影技術及蝕刻技術將金屬膜圖 案化以形成各墊片13及反射膜21a的金屬膜圖案化步驟， 藉以獲得圖5C所示之構造。此外，本實施形態中，由於將 各墊片13和反射膜21a之材料及臈厚設定成相同，所以同 時形成各墊片13和反射膜2la，而在各墊片13和反射膜 21a之材料或膜厚是不同的情況，分別設置用以形成各墊片 13的墊片形成步驟與用以形成反射膜21a的反射膜形成步 24/40 201210308 驟即可。 形成上述的各墊片13及反射膜21a之後，在SOI基板 1〇〇的上述一表面（第丨面）側，以覆蓋與第1矽層1〇〇a 當中的可動框部23、反射鏡部24、一對第1扭轉彈簧部30、 30、一對第2扭轉彈簧部25、25、外側框部10、第1固定 電極12、第2可動電極22、第2固定電極26及第2可動 電極27相對應的部位之方式形成被圖案化的第1抗蝕劑層 130。之後，進行將第1抗蝕劑層】3〇做為遮罩，將第1矽 層100a I虫刻迄至到達絶緣層】〇〇c的深度（第1規定深度） 而將第1矽層100a圖案化的第1矽層圖案化步驟（表面側 圖案化步驟），藉以獲得圖5D所示之構造。在第丨矽層圖 案化步驟的第1矽層100a之蝕刻係如同感應耦合電漿型的 姓刻裝置等般地’利用各向異性高的钮刻之乾式钱刻震置 進行即可。又，在第1矽層圖案化步驟中，將絶緣層丨 做為蚀刻停止層利用。 在上述的第1矽層圖案化步驟之後，除去s〇1基板1〇〇 之上述一表面（第1面）側的第1抗蝕劑層130。之後，在 SOI基板励的上述一表面（第1面）側的整面形成第2 心敍劑層131。接著’在SOI基板100的其他表面（第2 面）侧’以使第2矽層100b當中的對應於外側框部1〇、支 持體29的雜以外者露出的方式形紐圖案化的第3抗触 背1層132之後，進行將第3抗名虫劑層】做為遮罩，將第 夕層100M虫刻至到達絶緣層刚c的深度（第2規定深 度）而將第2石夕層i〇〇b圖案化的第2石夕層圖案化步驟，藉 以獲得圖5E所示之構造。在第2石夕層圖案化步驟的第2 石夕層之伽彳係如同感餘合電漿型之侧裝置等泰 25/40 201210308 =，利用各向異性高且可垂直深掘的乾式爛裝置進行即 可又’在第2石夕層圖案化步驟中，將絶緣層1〇〇c做為姓 刻停止層利用。 在上述的第2石夕層圖案化步驟之後，透過進行從s〇i 基板100的上述其他表面（第2面）側敍刻s〇i基板刚 =、、’色、’彖層lGGe的不要部分的絶緣層圖案化步驟而形成瓦射 鏡形成基板1。接著，除去第2抗蝕劑層131及第3抗蝕劑 層13=又，亦除去矽氧化膜mb。之後，進行利用陽極 $妾合等方式接合反觀形絲板丨和帛丨蓋基板2及第2 盍基板3的接合步驟，藉以獲得圖5F所示之構造的 反射鏡403。 上述的接合步驟中，從保護反射鏡形成基板1的鏡面 21之觀f ’以在進行將第丨蓋基板2和反射鏡形成基板ι 接合的第1接合過程之後，再進行將反射鏡形成基板i和 第2盍基板3接合的第2接合過程者較佳。此處，在第j 接合過程中，首先，將第1玻璃基板2〇〇形成了第〗凹部 20^或各貫通孔2〇2等的第丨蓋基板2與反射鏡形成基板上 重宜而成的積層體，在規定真空度（例如，1〇Pa以下）的 真工中加熱至規定的接合溫度（例如，〜4〇〇〇c左右） 的狀悲’在第1石夕層l〇〇a與第1蓋基板2之間，將第1蓋 基板2側a又為低電位側並施加規定電壓（例如，*⑻v〜8〇〇v 左右）’將此狀態僅保持規定的接合時間（例如，2〇分鐘〜 60分鐘左右）即可。又，在第2接合過程中，按照上述的 第1接合過程，進行第2矽層100b與第2蓋基板3之陽極 接合。此外，接合反射鏡形成基板1和各蓋基板2、3的接 合方法不限為陽極接合，例如，亦可利用常溫接合法等。 26/40 201210308 又，亦可做成是在第1糾_化步驟之後 板100和第1蓋基板2,之後，透過進行第2石夕/圖安卜4 驟、絶緣層_化步驟轉成反射鏡形成基板Z之二， 合反射鏡形成基板1和第2蓋基板3。 交趣 其次，針對MEMS反射鏡403的動作進行說明。 MEMS反射鏡403中，將用以驅動可動部 壓經由-對墊片13、13施力W對⑽第】可 ^ 與=固定電極】2之間，藉以在第1可動電極22盘第2 Π 12 m靜電力’可動部20係繞y軸方向r 動。而在MEMS反射鏡403中，藉由將規定的 ^^ 脈衝電壓絲於第丨可動電極22與第j 可周期性地產生靜電力，能使可動部20搖動。之間， ，此公上述的可動部2〇由於内部應力的緣 靜止狀‘仙非水转勢（與xy平面 气 但仍呈傾斜，所以例如當第！可動電極22i^固=少 12之間被施加脈衝電壓時，即便是從靜止狀態，^ 部20施加略垂直方向（z軸方向）的驅 =’ 了動 以-對第i扭轉彈簧部3〇、3〇為^扭轉動部20 第1扭轉彈簧部30、30—邊旋動j扭轉该〜對 22與第!固定電極12之門後，萄弟】可動· 定的動力在可動梳齒片细斑固 心片b成為完全相互重疊那樣的姿勢時被 :30 -邊繼續旋動。然後，在可動部2〇的 動： ㈣對弟i扭轉彈簀部3G、3G的復 時’可動部2G朝向該旋動方向之旋動停止。此時 可動電極22與第】固定電極12之間又被施加脈衝電田 27/40 201210308 產生靜電力時，可動部20係利用一 3〇的復元力和第1驅動手段的驅動力=轉彈簧部30、 為止的方向之反方向旋動。可動部2〇係^朝與迄至目前 驅動手段的驅動力和-對第丨扭轉彈箬部^進行依據第1 所引發的旋動’以-對第i扭轉彈酱部。3 、3^復元力 行搖動。 為疑動軸進 ^ “興弟1固定電極12之Η 的驅動電壓之施加雜、解並切舰定，例 = :加在第1可動電極22與第1固定電極U之間的電壓： 為正弦波電壓。 1又 此外，MEMS反射鏡4〇3係例如：將電性連接有 可動電極22及第2固定電極26的墊片⑶的電位做為基 準電位，使第】固定電極]2及第2可動電極2 7各自的^ 位周期地變化，藉此能使可動部2〇在一對第]扭轉彈簧部 30、30之軸周圍旋動，並且能使反射鏡部以在一對第2扭 轉彈簧部25、25之軸周圍旋動。總之，在本實施形態的 MEMS反射鏡403中，將用以驅動可動部2〇的脈衝電壓經 由一對墊片13b、13a施加於對向的第丨固定電極12與第1 可動電極22之間，藉以在第1固定電極12與第j可動電 極22之間產生靜電力，使可動部20繞y軸方向旋動。又， 此MEMS反射鏡403中，將用以驅動反射鏡部24的脈衝 電壓經由一對墊片13a、13c施加於第2固定電極26與第2 可動電極27之間’藉以在第2固定電極26與第2可動電 極27之間產生靜電力，使反射鏡部24繞X軸方向旋動。 而在本實施形態的MEMS反射鏡403中，藉由在第1固定 電極12與第1可動電極22之間，施加規定的第1驅動頻 28/40 201210308 衝電壓，可周期性地產生靜電力，能使可動部加全 體，動，再者，藉由在第2岐電極26與第2可動電極27 之間，施加規定的第2驅動頻率之脈衝電壓，可周期性地 產生純力，可使可動部2G的反射鏡部24搖動。此外， 形絲板丨係在由外趣部1G和^蓋基板2所包 圍^間側，第〗⑪層職之未形成有反賴化的部位 之表面形成有矽氧化膜Ilia (參照圖5F)。 在本實施形態的細娜反射鏡403巾，透過在第i固 定電極12與第i可動電極22之間，施加由可動部如和一 對第i扭轉簧部30、3G所構叙縣㈣共振頻率之大 :2倍頻率之脈衝電壓，可動部2〇係伴隨共振現象而被驅 械偏轉角（以平行於xy平面的水平面為基準時的傾 斜，大。又，在本實施形態的mems反射鏡彻中，透 過在第2固定電極26與第2可動電極27之間，施加由反 射鏡部24和-對第2扭轉彈簧部25、25所構成之振動系 =共振頻率的大約2倍頻率之脈衝電壓，反射鏡部Μ係伴 ，共，現象而被驅動，機械偏轉角（以與可動框部幻中的 第1蓋基板2側的表面平行的面為基準時的傾斜）變大。 此外，上述判斷部係設置在控制裝置（未圖示），該控 制裝置由驅動摘測用雷射4〇1的第i雷射驅動農置、驅動 ’’、、頁示用田射411的第2雷射驅動裝置、及控制驅動MEMS 反射鏡403的反射鏡驅動裝置之微電腦等構成。此處，反 射鏡驅動裝置係由第i可動電極22和第i固定電極^構 成的第1 手段、第2可動電極27和第2蚊電極26 構成的第2驅動手段、及用以將第丨驅動電壓施加於第1 驅動手段且將第2驅動電壓施加於第2驅動手段的電譽所 29/40 201210308 構成。 上述控制裝置係做成：反射鏡驅動裝置中，在從電源 施加於MEMS反射鏡403的第1驅動手段之第1驅動電壓 上，重疊地施加用以偵測可動部20相對於固定框部1〇之 機械偏轉角的第1直流偏電壓，同時在從電源施加於MEMS 反射鏡403的第2驅動手段之第2驅動電壓上，重疊地施 加用以偵測反射鏡部24相對於可動框部23之機械偏轉角 的第2直流偏電壓。 可動框部23之傾斜。上述控制裝置 纤。上述控制裝置係可依櫨彼篝之储拉忠201210308 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a sensor device. [Prior Art] The object recognition sensor consisting of the sm-hess in the knocking case (Japan National Special Report No. 6·〇44398Α (This object recognition sensor system is equipped with: # &; The light-emitting element 501 of the first ray, the lens 5' for beam shaping, the light scan _ for scanning the light beam α two-dimensionally, the light-receiving element 5G4, the scanner drive power_5, and the control unit 506. The illuminating element gamma-based material conductor laser element or illuminating element is formed, and the beam shaping lens 5 () 2 is provided by condensing or aligning the light beam α emitted from the light-emitting element 501. The optical scanner 5〇3 is composed of a vibrating plate 511 and a piezoelectric element Μ2. The vibrating plate 511 is formed by a thin plate of a second W, and has a shaft-like elasticity in a bending deformation mode and a torsional double-replacement resonance. The deforming portion (torsion bar) is provided with a scanning portion 514, and the other end is provided with a vibrating wheel portion 515. The surface of the sweeping portion 514 is mirror-finished to form a mirror surface (not shown) and a vibrating wheel. The entrance portion 51 engages the laminated piezoelectric element. Therefore, the diaphragm 511 is attached. The sensor unit 5 is read by the piezoelectric tree 512, and the scanning unit 5 is supported by the elastic deformation unit 513. The light receiving element 504 is formed by a photodiode or the like. The circuit 5〇5 is a voltage v(1) obtained by superimposing the AC voltage Vb having the same resonant frequency of the frequency and the elastic deformation portion 513 and the AC voltage %(1) having the same resonant frequency as the frequency and the torsional mode. The piezoelectric element 512 is applied to the piezoelectric element 512. Therefore, the elastic deformation 4/40 201210308 portion 513 simultaneously performs vibration in the bending deformation mode and vibration in the torsional deformation mode, and causes the scanning portion 514 to rotate up, down, left, and right (% in the figure u = The rotation is the rotation in the up and down direction 'the rotation in the θτ direction is the rotation in the left and right direction.) As a result, the optical scanner 503 can continuously scan the light emitted from the light emitting element 501 in the two-dimensional scanning area 5〇7. The light beam α. 'again' because the above-described object recognition sensor can detect the scanning angle of the light beam α (or the deflection angle of the scanning portion 514) by detecting the voltage V (t) applied to the piezoelectric element 512' Voltage value applied to piezoelectric element 512 Vb (t ), vT (t) is used as scan angle information (or yaw angle information) 51 〇, and is output from the scanner drive circuit 505 toward the signal processing unit 50 (5. Further, in this object recognition sensor, When the object 508 is present in the scanning area 5〇7 of the light beam, the light beam α emitted from the light-emitting element 501 and scanned by the optical scanner 5〇3 is incident on the surface of the object 508 and reflected, and in the object 5〇8 The reflected scattered light is received by the light receiving element 504, and an object 5〇8 is detected. Here, in the object recognition sensor, the light receiving signal 509 of the light receiving element 5〇4 is input to the 彳§ processing unit 506. . Then, when the signal processing unit 506 receives the light receiving signal 509 from the light receiving element 504, it reads the instantaneous scanning angle information 510 and converts it into coordinates to detect the two-dimensional position of the object 5〇8. Further, Document 1 describes the main points in the field in which the object recognition sensor can be used in the fields of reading a code reading device, a human body feeling sensing, and a one-dimensional optical sensor. However, 'in the sensor device of the object recognition sensor constructed as shown in FIG. 11, 'the optical axis and the light-receiving element 5 of the optical system constituted by the light-emitting element 501 and the lens 502 and the optical scanner 503. Since the optical axes of 4 are different (there are independent optical paths), the light receiving element 504 is easily affected by the disturbance light, and the entire sensor device is enlarged. SUMMARY OF THE INVENTION 5/40 201210308 The present invention has been made in view of the above circumstances, and an object thereof is to provide a sensor device which is less susceptible to interference light and which can be miniaturized. The sensor device of the present invention is provided. And a laser for detecting the laser light for detecting the laser light; and an optical mirror for reflecting the detection laser light toward the detection object space; and configured to detect the The light detecting unit for detecting the laser light reflected by the object space side. The sensor device further includes a half mirror configured to reflect and transmit, respectively, one or both of the detecting laser light incident on the half mirror. The optical mirror is composed of a MEMS device including a movable portion and a mirror surface provided on the movable portion. The optical mirror is configured such that the detection laser light from the half mirror is reflected toward the measurement target space side by the mirror surface, and the detection laser light reflected on the detection object space side is reflected It is reflected by the mirror surface to the light detecting portion =. And an optical axis between the detecting laser and the optical mirror and an optical axis between the optical mirror and the light detecting portion are aligned between the optical mirror and the half mirror. . In one embodiment, the sensor device further includes a determination unit configured to determine whether or not there is an object in the interrogation based on the rounding of the light detecting unit. The semi-mirror system is configured such that one of the aforementioned detection laser beams emitted from the above-mentioned manufacturing field is reflected by the optical mirror, and the angles θ, f #, and al. And the front part of the object to be detected on the side of the object to be detected is measured by the half-mirror. In one embodiment, the sensor detects the display portion in the object space; a display laser configured to emit laser light for display for display in a predetermined display on the display 6/40 201210308; and a beam splitter between the price measurement laser and the half mirror . The beam splitter system is composed of . The display laser light emitted from the display laser is reflected by the splitting light toward the half mirror side, and the detecting laser light from the detecting laser is transmitted through the beam splitter. . In the embodiment, the sensor device further includes a lens that is positioned between the half mirror and the light detecting portion to condense the detecting laser light on a light receiving surface of the light detecting portion. Further, the lens system is disposed at a position in an imaging relationship with respect to the display portion. In the embodiment, the display unit is configured by a screen for retroreflecting both the detection laser light and the display laser light. In the embodiment, the sensor device further includes a light shielding member ′ disposed between the detection laser light and the light path of the display laser light to shield the diffused light. In an embodiment, the sensor device further includes a housing for accommodating the detection laser, the half mirror, the optical mirror, the light detecting unit, the display laser, and the beam splitter The lens and the light shielding member. Further, the inner surface of the frame scatters the rough surface of the diffused light. The sensor device of the present invention is less susceptible to interference and can be miniaturized. [Embodiment] Next, a preferred embodiment of the present invention will be described in detail. Other features and advantages of the present invention will be more clearly understood from the following detailed description and appended claims. Hereinafter, the device of the surf yi 7/40 201210308 of the present embodiment will be described with reference to Figs. 1 to 8 . The sensor device includes: a detection laser 40 configured to emit the detection laser light 1B1; and a MEMS mirror 403 configured to reflect the detection laser light 1B] toward the detection target space side 405; The light detecting unit (light receiving unit) 404 that detects (receives) the detecting laser light 1bi reflected on the detection target space side 405. The sensor device is further provided with a half mirror (beam splitter) 402' which is configured to cause a portion (typically half) of the detecting laser light LB1 incident on the half mirror 402 and the remaining portion (typically another Half) reflection and transmission. In FIGS. 1A to 1D, the half mirror 402 is configured such that a portion of the detecting laser light LB1 emitted from the detecting laser 401 is passed through the half mirror 402 (more specifically, only by the half mirror 402). A part of the tilting laser light LB1 reflected toward the optical mirror 403 and reflected on the detection target space 405 side is transmitted through the half mirror 402 and incident on the light detecting portion 404. The MEMS mirror 403 is a MEMS (Micro Electro Mechanical Systems) device, and includes a movable portion 2 (see FIGS. 3, 4, and 5F) and a mirror surface 21 provided on the movable portion 20 (see FIG. ; 3, Figure 5F). Further, the MEMS mirror 403 is configured to reflect the detection laser light LB 1 from the half mirror 402 toward the detection target space 405 side by the mirror surface 21, and to detect the reflection in the detection target space 405. The laser light LB1 is reflected by at least the mirror surface 2] to the light detecting portion 404 side. In FIGS. 1A to 1D, the MEMS mirror 403 is configured such that the detection laser light LB1 reflected by the half mirror 402 is reflected by the mirror surface 21 to the detection object space 405 side, and the detection object space 405 is again detected. The object (the finger in the example shown in FIG. 1) 406 or the detection laser light LB1 reflected by the display unit 410 to be described later is reflected by the mirror surface 21 (in detail, only by the mirror surface 21) to the light detection #404 side. The light detecting portion 404 is positioned on the opposite side of the MEMS mirror 403 with the half mirror 402 interposed therebetween. Therefore, the light detecting unit 4〇4 detects the detecting laser light LB1 that is reflected by the MEMS mirror 403 after detecting the object 406 or the display portion 4 0 in the image space 405 of the 8/40 201210308. The sensor device further includes an evaluation unit 408 as an option for determining whether or not the object 406 is present in the detection target space 405 based on the output of the light detecting unit 4〇4. Here, the light detecting unit 404 detects the detecting laser light LB1 of the transmission half mirror 402. Further, in the present embodiment, the MEMS mirror 403 constitutes an optical mirror. In addition, the sensor device is such that the optical axis OA1 between the detecting laser 401 and the MEMS mirror 403 and the optical axis 〇A2 between the MEMS mirror 403 and the light detecting portion 404 are in the MEMS mirror 403 and half. The mirrors 402 are identical. Further, the sensor device includes: a display unit ′ disposed in the detection target space 4〇5, and a display laser 411 for emitting display laser light LB2 for performing predetermined display on the display unit; A beam splitter 412 between the laser LB1 and the half mirror 402 is measured. The beam splitter 412 is optically designed such that the display laser light LB2 emitted from the display laser 411 is reflected toward the half mirror 402 by the beam splitter 412 and is derived from the detecting laser 4〇1. The detection laser light LB1 is transmitted through the beam splitter 412. Further, the half mirror 402 is optically designed to transmit a portion of the detecting laser light [Β1 and reflect the remaining portion. therefore,. The half mirror 402 is optically designed to have a function of reflecting the detection laser light LB1 emitted from the detecting laser 401 toward the MEMS mirror 403 side; and an object 406 to be detected in the object space 405 or The function of the detection laser light LB1 reflected by the display portion 410 and reflected by the MEMS mirror 403 is transmitted. Further, the half mirror 402 is optically designed to reflect the display laser light LB2 from the display laser 411 in a predetermined direction (the MEMS mirror 403 side). In short, the half mirror 402 is provided on the side of the MEMS mirror 403 with a semi-transmissive layer that reflects the portion of the laser light LB1 and transmits the remaining portion. The semi-transmissive layer also serves as a reflective display. The wave layer of the light LB2. The detecting laser 401 uses a first semiconductor laser that emits infrared light as a detecting laser light Lm. Further, the display laser 411 uses a second semiconductor laser that emits red light as the display laser light LB2. In addition, the arrow of the solid line in FIG. 1B shows the traveling path of the detecting laser light LB1 emitted from the detecting laser 4〇1 toward the detection target space, and the arrow of the solid line in FIG. 1C is displayed. The traveling path of the detecting laser LB1 reflected by the display unit 410, the arrow of the solid line in FIG. 1D shows the traveling path from the display laser light LB2 emitted from the display laser 411 to the display unit 41〇. . In the sensor device, by the ΟΝ/OFF (on/off) or energy ratio control of the second power source that supplies electric power to the display laser 411, the display laser 411 can be easily flickered and dimmed. The display unit 41 can display a predetermined image (for example, an image of the virtual switch 440 shown in FIG. 9). Further, since the sensor device shares the half mirror 4〇2 in the optical system for displaying the image on the display unit 410 and the optical system for detecting the object 406, the number of components can be reduced, and the size and lightness can be reduced. Quantify. Further, the photodetecting unit 404 is a photodiode having sensitivity to infrared light, and its output changes in accordance with the amount of received light. Therefore, in the sensor device, the presence or absence of the object 406 in the light path of the laser light LB1 for the price measurement changes the reflectance of the reflection surface of the detection laser light LB1 in the detection target space 405. The amount of received light of the light detecting unit 404 changes. That is, 'the reflection rate of the reflection surface is determined according to the 10/40 201210308 display portion 410 because the object 406 does not exist on the light path of the detection laser light LB1 in the detection target space 405. The object 406 exists on the light path of the detecting laser light LB1 in the measurement object space 405. Since the reflectance of the reflecting surface is determined in accordance with the object 406, the amount of received light of the light detecting portion 404 changes depending on the difference in reflectance of the reflecting surface. Further, the sensor device includes a lens 407 positioned between the half mirror 402 and the light detecting portion 404. Here, the lens 407 condenses the detection laser light LB 1 for detecting the transmission half mirror 402 on the light receiving surface 404a of the light detecting portion 404. The lens 407 is a lenticular lens and is disposed at a position in an image relationship with respect to the display portion 41A. In short, the lens 407 is a case where the object 406 does not exist in the light path of the debt detecting laser light LB1 as shown in FIG. 6A, and is configured such that the imaging surface is in the optical axis direction of the light detecting portion 404 and the light detecting portion. The light-receiving surface 404a of the 404 is at the position of the light-receiving surface 404a of the light detecting portion 404, and the spot diameter of the detecting laser light LB1 becomes the minimum spot diameter. Therefore, as shown in Fig. 6B, in the case where the object 406 exists in the light path of the detection laser light LBi, the position of the imaging surface in the optical axis direction of the light detecting portion 404 is shifted. As a result, the image 414 (see FIG. 6C) of the detection laser light LB1 on the photodetecting unit 4〇4 is enlarged (so-called image height variation, in other words, blurring occurs without focusing), so that the object 4 can be enlarged. The presence or absence of 〇6 causes a change in the amount of received light of the light detecting unit 404. For example, the diameter of the light receiving surface 404a of the light detecting portion 404 is imm, and as shown in FIG. 6A, the image height of the case where the object 4〇6 does not exist on the light path of the detecting laser light LB1 is 1 mm, and as shown in FIG. 6B'. When the image of the case where the object 406 is present on the light path of the detection laser light LB1 is 2 mm south, the amount of received light in the light detecting portion 404 is suddenly reduced. Therefore, even if the difference between the reflectance of the object 4〇6 and the reflectance of the display portion 410 is small, the change in the amount of received light depending on the presence or absence of the object 406 becomes large. 11/40 201210308 In addition, as a part of the display, the luminance of the laser beam using the detection laser beam 1 will follow the curtain of the Lambert's cosine law (ie, the display unit 410 will In the case where the detection laser light LB1 is directed to the screen of the Lambertian reflection, the amount of light received by the nuclear light measuring unit 404 of the object plum is small, and depending on the presence or absence of the object 4〇6, Since the change in the amount of received light of the measuring unit 404 is small, the S/N ratio becomes small. Therefore, the display unit 410 is preferably a screen composed of a reflection and reflection for the detection laser light 1B1. In short, it is preferable to use a so-called reversal reflection screen as a display part and a screen. Recursive Reflection The screen is a screen that emits reflected light in the same direction as the incident light, and has high reflection directivity. Therefore, when the reflexive reflection screen is used as the display unit 410, the amount of light of the light detecting unit in the case where the object 4〇6 is not present can be increased, and the presence or absence of the object 4〇6 can be increased. The change in the amount of received light of the light detecting unit 404 can increase the S/N ratio. According to this, in the sensory device, the s/Ν ratio outputted by the light detecting unit 404 can be increased, and it is conceivable! The detection accuracy of the lifting object 406 is sought. As a retroreflective reflector used for a retroreflective screen or the like, it is known that a glass bead for refracting light is two-dimensionally arranged, or a prism lens for refracting light is two-dimensionally arranged. Reflective sheet, etc. (In addition, 'reflective sheet for this kind, for example, refer to http: //www. Kokusaku. Com/3M. Htm). As shown in FIGS. 3, 4, and 5F, the MEMS mirror 403 is formed by using an SOI (Silicon on Insulator) substrate 100 of a semiconductor substrate and having a mirror surface 21 on the movable portion 20. The resulting mirror forms the substrate 1. Further, the MEMS mirror 403 includes a first lid substrate 2'. The lid substrate 2 is joined to the surface (first surface) side of the mirror forming substrate 1 on which the mirror surface 21 of the 12/40 201210308 is provided. Further, the MEMS mirror 4〇3 includes a second lid substrate 3 joined to the other surface (second surface) side of the mirror forming substrate 1. The mirror forming substrate 1 is formed by processing the above-described s1 substrate 1 by a bulk micromachining technique or the like. The s〇j substrate 100 is provided with an insulating layer between the conductive layer (active layer) 1〇〇a and the second layer (Shixi substrate) 10b (Si〇2) Layer) 1〇〇c. Further, in the SOI substrate 100, the thickness of the first layer i〇〇a is set to 3〇#m, and the thickness of the second layer 00b is set to 400/m, but the numerical values are examples, and are not particularly limited. Further, the surface of the SOI substrate 1〇0 (the first surface), that is, the surface of the first layer 10a is a (1) plane. The mirror-formed substrate 1 includes an outer frame portion 1A, the movable portion 2〇 disposed inside the outer frame portion 10, and a movable portion 20 disposed inside the outer frame portion 1〇, and the outer frame is disposed One of the parts 1〇 and the movable part 2〇 are connected to the brother 1 to twist the yellow part 3〇, 30. Each of the first torsion spring portions 3A and 30 can be twisted and deformed. The outer frame portion 10 has a frame shape (here, a rectangular frame shape), and the outer peripheral shape and the inner peripheral shape are each formed in a rectangular shape. Here, the reflection of the MEMS mirror is formed in a rectangular shape in the outer peripheral shape of each of the substrate 1 and each of the disk substrates 2 and 3, and the outer dimensions of the respective cover substrates 2 and 3 coincide with the outer shape of the mirror-formed substrate 。. In addition, the first lid substrate 2 is formed by using the second glass substrate 2, and the δHai 1 glass substrate 200 is overlapped and joined in the thickness direction by two glass sheets each composed of pyrex (registered trademark) glass or the like. Formed. Further, the second substrate 3 is formed using the second glass substrate 3, and the second glass substrate 300 is made of Pyrex (registered trademark) glass or the like. In addition, the thickness of the 13/40 201210308 1 glass substrate 200 and the second glass substrate 300 is 〇. 5mm ~1. The range of about 5 mm is set, but the numerical values are an example and are not particularly limited. The outer frame portion 10 of the mirror forming substrate 1 is formed using the first tantalum layer 100a of the SOI substrate]00, the insulating layer 100c, and the second tantalum layer 100b. Further, the portion of the mirror-formed substrate 1 formed by the first layer 丨〇〇a of the outer frame portion 1 is joined to the outer peripheral portion of the first lid substrate 2 over the entire circumference, and the outer frame portion 10 is joined. The portion formed by the second layer 10b of the second lid substrate 3 is joined to the entire circumference of the second lid substrate 3 over the entire circumference. Further, the movable portion 2 of the mirror-forming substrate 1 and the respective twisted elastic portions 30 and 30 are formed using the first layer 1〇〇3 of the 801 substrate 100, and are relatively thin compared to the outer frame portion ίο. Further, the mirror surface 21 provided in the movable portion 2 is for reflecting the manufacturing laser light LB1 from the 彳贞_Laser 4G1 and the display laser light LB2 from the display laser 411, and is a reflection film 2la. The surface of the opposite surface is formed by a (4) genus film (Example 2 A1-S! film, etc.) formed on the movable portion 2" by the portion formed by the second layer. Further, in the present embodiment, the thickness of the reflective film is set to 5 GG _ ', but the numerical value is - for example, and the following is not particularly limited to the 'left side of FIG. 3 'in the plan view and the spring portions 3G and 3G And the direction in which the direction is orthogonal is set to the X-axis direction], and the pair of first torsion magazines Qiu Ru μ ν ^ 1 ~ ... - 30 is set in the y-axis direction (different direction 2), and The axial direction and the glaze direction of the shaft are described in the z-axis direction (third direction). ° The square mirror forming substrate 1 is attached to the y-axis direction and is provided with a spring portion 3. , 3. The movable portion 20 is displaceable to the outer frame portion 1G by a pair of rotations of the third side (the y-axis can be wound around the y-axis H/40 201210308, that is, the pair of first torsion spring portions 3, 30, The movable portion 2 连结 can connect the outer frame portion 1 〇 and the movable portion to the outer frame portion 1 〇, and the movable portion % disposed inside the outer frame portion 透过 passes through the movable portion 20 In the opposite direction, the two i-th torsion spring portions 30 and 30 that are integrally extended in two directions are rotatably supported by the outer frame portion 1A. Here, the first torsion spring portions 3A and 3G are formed as follows: The straight line connecting the center lines along the z-axis direction is the center of gravity of the movable portion 2〇 in plan view. Further, the respective torsion spring portions 3〇 and 3〇 are set to have a thickness dimension (zs is the dimension in the direction). It is 3G"m, the size of the width dimension in the U-axis direction is two or two, but the fresh value is - for example, it is not special. Further, the inner circumference of the outer frame portion is not limited to a (four) shape, and may be, for example, a round. The mirror-shaped wire plate system described above is formed separately in the movable portion (9), and the person is connected to the first torsion spring portion %% - the direction in which the spring portions 30, 30 are arranged) orthogonal to each other = - brother 1 : To the side of the comb of the comb! The movable electrodes 22 and 2, and the x-axis mirror-formed substrate 1 are provided with a comb-shaped first electrode 12 . The reflection is from the first movable electrode 22, 22 to the second movable body, and the side frame portion 1. . Each of the first fixed electrodes 12 has a plurality of movable comb pieces 22b facing each other, and the plurality of movable comb pieces 22b are opposed to each other (the first movable piece (3). Here, the plurality of solids (four) and u are used. The electrostatic force drives the first driving means of the type 22. In addition. The electrostatic drive of 0 drives the movable portion 2〇v:^ by electrostatic force, and the first drive means may be electrostatically driven by electromagnetic force, and may be driven by an electric element. Also, the first fixed electrode 12 has a plan view shape of ==. In the outer frame portion 10 15/40 " 201210308, the two portions of the frame portion along the y-axis direction which are formed by the ith second layer are formed into the comb bone portion 12a. Further, the first electrode 12 is the opposite surface of the =12a with the movable portion 2G (the inner side in the axial direction of the outer frame portion 1'), and a plurality of fixed comb pieces (3) are: =1 The torsion spring portions 30, 30 are arranged in the direction in which they are arranged. Here, each of the fixed=tooth pieces 12b is constituted by the layered portion of the second layer. On the other hand, the first movable electrode 22 is on the side of the comb bone portion on the side of the comb bone portion 12a of the second solid electric power=12 in the movable portion 2 (the movable portion 2 is further along the z-axis direction) The two side movable comb pieces 22b, which are respectively opposed to the fixed comb pieces (10), are arranged in the above-described aligning direction. Here, each movable comb piece 225 is formed by a part of the t-th layer 〇〇a, and the respective comb bone portions 12a'22a of the first movable electrode 22 are opposed to each other, and are fixed to each other. Each of the fixed comb pieces 2b of the electrode 12 is inserted into the comb groove of the i-th movable electrode 22 (between the adjacent movable comb pieces 2 and 22b), and the fixed comb piece 12b and the movable comb piece are in the direction of the vehicle. Mutual 7? 4. Therefore, in the "second driving method", a voltage is applied between the first fixed electrode 12 and the first movable electrode 22, and the first fixed electrode U and . Static electricity acting between the first movable electrodes 22 affecting each other in the direction of mutual pull is generated. Further, the gap between the solid portion of the y pumping direction #b and the movable comb sheet can be appropriately set, for example, in the range of 2 (four) to 5 " m, and the movable portion 20 has a twist through a pair of second turns. The spring part 3〇, 3〇 and rocking freely support the outer frame. a movable frame portion 23 having a frame shape (here, a rectangular armature); a mirror portion 24 disposed inside the movable frame portion 23 and provided with the mirror 21; and a movable frame portion 23 in the state of the frame 23 /40 201210308 The form of the transfer movable frame portion 23 and the reflection deformation - the second torsion bombs 25, 25 _ 24 are connected and can be twisted ^ torsion springs ~ 25 series and set in the idle side ^ (y The direction is orthogonal to the direction of the spring portion 3〇, the moving portion 20 to the second torsion spring portion 25 direction. In short, ^=24 becomes a pair of second torsion bombs: in the X-axis direction, and the movable frame portion 23 is displaced (becomes rotatable around the vehicle = 5, 25 - the second torsion bomb * 25, with a mirror; two moves). That is, the = frame portion 23 is movably connected to the movable unit. In other words, with the #23 and the mirror: the Γ is swayed freely supported by '= the first two: =::5, 25 is formed as: the two centers along the center of gravity of the mirror portion 24. In addition, each second See == Reflectance dimension (dimension in the z-axis direction) is 3〇//|11, the width is the thickness of the thickness) is 30_, as the size of the 箄 从 from the size (>, the axis direction, the reflection H Μ skin 4 value疋1' is not particularly limited. For example, the shape of 21 __ is not limited to a rectangular shape. For example, the inner peripheral shape of the movable frame portion 23 is not limited to a giant shape, and may be, for example, a circular shape.箐 述 = = = = = = = = = = 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 = = = = = = = = = = = = = The mirror surface 21 of the mirror portion 24 is configured to be two-dimensionally rotatable 'two-dimensionally scanning the detection laser light LB1 and the display field. Here, the movable portion % is the first in the movable frame portion 23 On the opposite side of the cover substrate 2 side, a movable frame 鄱23 17/40 201210308 is integrally provided as a frame-like (rectangular frame-shaped) support body 29, and the support body 29 portion 23 is integrally rotated. Further, the 'mirror forming substrate 1' is provided in the mirror portion, and is formed in the pair of second torsion spring portions 25 and 25 to be separated from each other by a stone direction (a cake 2 torsion spring portions 25 and 25). The second movable electrode 27, the π xiao #, and the 固定 2 fixed electrodes 26 and 26 on both sides of the orthogonal direction (also in the direction of the axis) are provided. The second fixed electrodes 26 and 26 may be the electrodes 27 27 (opposite) is formed in the movable frame portion. Each of the second fixed electrodes 26 has a plurality of fixed faces (adjacent) of the plurality of movable comb pieces 27b facing the second movable electrode. The comb 26b is formed. Further, the second movable electrodes 27 and 27 and the second fixed electric units 26 and 26 constitute an electrostatic drive 2 driving means for driving the mirror portion 24 by electrostatic force. The electrode 26 has a comb shape in a plan view, and the comb portion 26 & is formed by a portion of the movable frame portion 23. Further, the comb portion 26a of the second fixed electrode 26 faces the mirror portion 24 (movable) In the frame B, along the inner side of the f-axis direction, a plurality of fixed comb-shaped pieces 2 are twisted along the second to the second The spring portions 25 and 25 are arranged side by side. On the other hand, the second movable electrode 27 is formed by a part of the mirror portion 24, and is on the side of the combb portion 26a side of the first drain 26 (mirror portion). In the case of the "direction side", the movable comb-shaped pieces 27b are arranged in the same direction in the direction in which the fixed comb-shaped pieces are opposed to each other. The second fixed electrode 26 and the comb-shaped one in this shape 2, the movable electrode 27 is in the opposite direction to each other, and the LU4 sheet 26b of the second fixed electrode 26 is inserted into the comb groove of the second movable electrode 27 (between the adjacent movable combs U 27b) The fixed comb piece 26b and the movable comb piece 27b are separated from each other in the x 18/40 201210308 axial direction. Therefore, the mirror-shaped wire plate is biased between the second fixed electrode 26 and the second movable electrode 22 by the voltage applied between the second fixed electrode 26 and the second movable electrode 22, and acts on the mutual pull between the second fixed electrode 26 and the second movable electrode 27. The electrostatic force in the direction. Further, the gap between the fixed comb piece 26b and the movable comb piece 27b in the X-axis direction can be appropriately set, for example, in the range of about 2/m to 5#m. Further, the mirror-formed substrate 1 is arranged such that it is arranged in a straight line in plan view, and the three spacers 13 are provided at substantially equal intervals and are provided on the outer frame portion 1A. On the other hand, the first cover substrate 2 is provided with three through holes 202 through which the respective spacers 13 are exposed. Each of the spacers 3 has a circular shape in plan view and is formed of a first metal film (for example, an A1_Si film or the like). Further, in the present embodiment, the film thickness of each of the spacers 13 is set to 5 〇〇 nm, but this numerical value is an example and is not particularly limited. The mirror-formed substrate is formed in a plurality of (here, three) slits in a portion formed by the first layer 10a in the outer frame portion, and is movable in the movable frame portion of the movable portion 20. A plurality of (here, four) slits 20a are formed in the portion formed by the second layer 100a in FIG. Accordingly, among the three cymbals 13 of the mirror-forming substrate 1, the spacer i3 (i3b) in the center of FIG. 3 is electrically connected to the first fixed electrode 12 to have the same potential, and the spacer U on the right side (13a) The first movable electrode 22 and the second movable electrode 26 are electrically connected to each other to have the same potential, and the left spacer 13 (; l3c) is electrically connected to the second movable electrode 27 of the mirror portion 24 to have the same potential. Here, the plurality of slits 10a of the outer frame portion 10 are formed to have a depth reaching the insulating layer 100c. In the MEMS mirror 4〇3 of the present embodiment, the slits 1〇a are formed as grooves, and the slits 1〇a have a plan view shape that is not opened to the outer side surface side of the outer frame portion 1〇. The shape of the outer side portion 19/40 201210308 10 has a slit H)a, which prevents the joint of the outer substrate 2 from being lowered to ensure that it is surrounded by the outer frame portion ω and each of the seesaws t 3 . Air tightness. The plate 2 3 and the slits 2〇a of the movable frame portion 23 in the movable portion 20 are formed as grooves and formed into a portion of the insulating layer chamber which is reached by the substrate 1 and the second _ The insulating layer 100c of the above-described support body 29 is formed by a portion. In short, in the case of the MEMS mirror 4〇3, a plurality of slits are formed in the movable frame portion 23, and the movable frame portion 23 and the support body 29 are made to be able to be wound around the first torsion. 30, 30 and - body (four). Here, the branch 29_ is formed in a frame shape covering the movable frame portion 23 except for the respective fixed comb pieces to the respective movable comb pieces 22b (see Fig. 4). Further, the shape of the plurality of grooves of the movable frame portion 23 is such that the center of gravity of the movable portion 2 Q including the support member 29 is positioned in the vicinity of the pair to be in the plan view! The design of the torsion spring portion 3 (), the % y-axis direction = the center line of the heart line is approximately the center. On the other hand, in the MEMS mirror 4〇3 t of the present embodiment, the movable portion 2 is wound around the pair of torsion spring portions 30 and 30, and smoothly shakes, and the reflected light is appropriately applied. In addition, in the present embodiment, the thickness of the portion of the support body 29 that is formed by the second layer is not the same as the thickness of the 211 layer drive. Thicker or thinner. The first cover substrate 2 is used as described above! In the glass substrate 2, three through holes 2〇2 which are exposed in the entire circumference of each of the spacers 13 are provided in the thickness direction of the i-th glass substrate 200. Here, the first! Each of the through holes 202 of the glass substrate 2 is formed so as to have a larger opening area and a larger cross-sectional shape as it leaves the mirror forming substrate. Each of the through holes 202 is formed by a sand blast method. The method of forming each of the through holes 202 is not limited to the blasting method, and the drilling process 20/40 201210308 method or the surname method may be employed. Further, ME1VIS /i y + & _ ^ / long-range mirror 403 is formed such that each of the spacers 13 has a circular shape in the plan view of the first mirror-formed substrate 1 side of each of the through-holes 2G2 (I) The diameter is still large. The diameter of each of the spacers 13 is not particularly limited as long as it is two T. Further, the shape of each of the spacers 13 is not square, but the shape of the TCff1 may be, for example, a square shape. However, when the opening of each of the beacon holes 202 is small, the round shape is square. It is better. In addition, in the case where a part of each of the spacers 13 is overlapped with the first lid substrate 2 in the thickness direction, there is a fear that the bonding property or the gas-filling force may be impaired by the influence of the thickness of each of the spacers 13, and the manufacturing time & The reason for the lowering, lowering of the stability of operation, and the decrease in stability over time. Therefore, in such a case, it is conceivable that the width dimension of the outer frame portion ( (the distance between the outer side surface and the inner side surface of the outer frame portion 1 )) needs to be increased, so that the miniaturization of the MEMS mirror 403 is limited. In the MEMS mirror 403 of the present embodiment, the first lid substrate 2 is not overlapped with the spacers 13, and a part of each spacer 13 is not interposed between the first lid substrate 2 and the outer frame portion ίο. . Therefore, in the MEMS mirror 403, the second cover substrate 2 and the mirror can be prevented from forming the substrate! The joining of the outer frame portions 10 is hindered by the respective spacers 13. As a result, in the MEMS mirror 403, it is possible to prevent the joint property or the airtightness from being impaired by the influence of the thickness of each spacer 3, and it is possible to reduce the width of the outer frame portion 1 without increasing the width of the outer frame portion 1 The cost reduction achieved by the improvement of the yield can suppress the decrease in the stability of the operation and the decrease in the stability over time. Further, in the MEMS mirror 403, the outer frame portion 1 of the mirror-forming substrate 1 and the airtight space surrounded by the respective cover substrates 2 and 3 can be insulted by 21/40 201210308 (vacuum environment). The mechanical deflection angle of the movable portion 20 and the mirror portion 24 is increased while reducing the power consumption. Then, in the MEMS mirror 403, the airtight space is set to a vacuum, and the opposing surface of the second cover substrate 3 and the mirror-forming substrate 1 is further than the portion joined to the outer frame portion 1〇. A non-evaporation type target (not shown) is placed on a suitable portion near the inner side. Further, the non-evaporation type target may be formed by, for example, an alloy containing Zr as a main component or an alloy containing Ti as a main component. Further, in the MEMS mirror 403, the airtight space surrounded by the outer frame portion 1A, the cover substrate 2, and the second cover substrate 3 may be made into an inert gas atmosphere (for example, a dry nitrogen atmosphere or the like). In the above-described MEMS mirror 403, since the airtight space is made into a vacuum environment or an inert gas atmosphere, oxidation of the mirror surface 21 can be prevented, so that the selectivity of the material of the mirror surface 21 is increased, and suppression can be suppressed. The temporal change of the reflection characteristic of the mirror surface 21. The first glass substrate 200 has a first concave portion 20 on the opposite surface of the mirror-forming substrate 1 to ensure a displacement space of the movable portion 2A. Here, the first The glass substrate 200 is formed by joining two glass plates as described above, and the glass substrate 200 is disposed on a glass plate (hereinafter referred to as a first glass plate) which is disposed on the side closer to the mirror-formed substrate 对应. The portion of the first recessed portion 201 is formed with an opening portion penetrating in the thickness direction, and a glass plate (hereinafter referred to as a second glass plate) disposed on the far side of the mirror-formed substrate 1 is formed into a flat plate shape. Therefore, the first glass is formed. Substrate 200 and using sandblasting In the case where the first concave portion 201 is formed, the inner bottom surface of the first concave portion 201 can be made smooth, and the diffusion reflection, the light diffusion, the scattering loss, and the like on the inner bottom surface of the first concave portion 201 can be reduced. The second cover substrate 3 is formed on the one surface of the mirror forming substrate 1 side of the second glass substrate 300 to form a second concave portion 301 for securing a displacement space of the movable portion 20 of the 22/40 201210308. In the case where the concave portion 301 is formed on the one surface (first surface) of the second glass substrate 300, for example, it may be formed by a sand blast method or the like. The second lid substrate 3' may be the same as the first lid substrate 2. The two glass plates are joined together, and an opening portion penetrating in the thickness direction is formed in a portion corresponding to the second concave portion 301 of the glass plate (hereinafter referred to as a third glass plate) disposed on the side close to the mirror forming substrate 1 . Further, the glass plate (hereinafter referred to as a fourth glass plate) disposed on the side far from the mirror-forming substrate 1 may be formed in a flat shape. Further, since the second cover substrate 3 does not need to transmit light, it is not limited. The second glass substrate 300 can be easily and reflected as long as it is A substrate formed of a material having a small difference in linear expansion ratio of Si which is bonded to the material of the semiconductor substrate (SOI substrate) can be formed, for example, a substrate can be formed using a tantalum substrate, and the second recess 301 can be used in this case. The MEMS mirror 403 of the present embodiment is surrounded by the outer frame portion 10, the second cover substrate 2, and the second cover substrate 3, as long as it is formed by a photolithography technique and an etching technique. Since the air is started and the space is set to a vacuum, and the mechanical deflection angle of the movable portion 20 is increased, the airtight space is set to a vacuum, and the above-described target is placed on the inner bottom surface of the second recess 301. Further, in the present embodiment, the thicknesses of the first lid substrate 2 and the second lid substrate 3 are set to 〇. 5mm~1. In the range of about 5 mm, the degree of the first recessed portion and the second recessed portion 301 is set in the range of 3〇〇#m~8〇〇#m: but the numerical values are an example as long as the movable portion 20 is oriented in the z-axis direction. It is sufficient that the summer position is appropriately set (that is, as long as it does not interfere with the depth of the swirling movement of the movable portion 20), and is not particularly limited. As the glass material of each of the glass substrates 200 and 300, Pyrex (5 main volume trademark) which belongs to the p矽23/40 201210308 skin is used, but it is not limited to the stone penicillin glass. For example, sodium calcium can also be used. Broken glass, alkali-free glass, quartz glass, etc. Hereinafter, a method of manufacturing the MEMS mirror 403 will be described with reference to Fig. 5, and Figs. 5A to 4(4) show schematic cross sections of the respective portions. First, on the surface (first surface) side and the other surface (second surface) side of the S〇I substrate 1 of the semiconductor substrate, the oxide film 111a is formed by the 'two, oxygen, or the like method. The lllb oxide film forming step is obtained to obtain the structure shown in Fig. 5A. After that, the first etched film (hereinafter referred to as the i-th oxidized plate) 111a on the surface of the surface of the s(I) substrate is patterned by the photolithography technique and the etching technique. The i矽 oxide film patterning step is used to obtain the configuration shown in FIG. 5B. In the step of patterning the ruthenium oxide film, a portion other than the predetermined region in which the reflective film 2a1 of the movable portion 2A of the oxide film 111a is formed, and the ith torsion spring portion 3〇, 3〇 are formed. The tantalum oxide film is patterned in such a manner that a corresponding portion or the like remains. After the step of patterning the ruthenium oxide film, a predetermined film thickness (for example, 510 nm) is formed by sputtering or vapor deposition on the surface (first surface) of the 〇I substrate 1 ^. a metal film forming step of a metal film (for example, an A1-& film), wherein the metal film is patterned by photolithography and etching to form a metal film patterning step of each of the spacers 13 and the reflective film 21a. The configuration shown in Fig. 5C is obtained. Further, in the present embodiment, since the material and thickness of each of the spacers 13 and the reflection film 21a are set to be the same, the spacers 13 and the reflection film 23a are simultaneously formed, and the materials of the spacers 13 and the reflection film 21a are formed at the same time. Alternatively, the film thickness is different, and the spacer forming step for forming the spacers 13 and the reflecting film forming step 24/40 201210308 for forming the reflective film 21a are respectively provided. After forming each of the spacers 13 and the reflection film 21a described above, the movable frame portion 23 and the mirror covering the first layer 1a are covered on the one surface (the second surface) side of the SOI substrate 1A. Portion 24, a pair of first torsion spring portions 30, 30, a pair of second torsion spring portions 25, 25, an outer frame portion 10, a first fixed electrode 12, a second movable electrode 22, a second fixed electrode 26, and a second The patterned first resist layer 130 is formed so as to correspond to a portion corresponding to the movable electrode 27. Thereafter, the first resist layer is used as a mask, and the first layer 100a is wound up to the depth of the insulating layer 〇〇c (first predetermined depth), and the first layer is formed. 100a patterned first layer patterning step (surface side patterning step) to obtain the configuration shown in FIG. 5D. The etching of the first layer 100a in the second layer patterning step may be performed by using a high-intensity button-like dry-type squeaking operation, such as an inductively coupled plasma type surname apparatus. Further, in the first layer formation step, the insulating layer 丨 is used as an etch stop layer. After the first layer formation step described above, the first resist layer 130 on the one surface (first surface) side of the s1 substrate 1 is removed. Thereafter, the second core layer 131 is formed on the entire surface on the one surface (first surface) side of the SOI substrate. Then, on the other surface (the second surface) side of the SOI substrate 100, the third pattern of the second layer 100b corresponding to the outer frame portion 1 and the support 29 is exposed. After the first layer 132 is resisted, the third anti-infesticide layer is used as a mask, and the first layer 100M is inscribed to the depth (second predetermined depth) of the insulating layer c, and the second stone is The second layer patterned step of layer i〇〇b is patterned to obtain the configuration shown in FIG. 5E. In the 2nd layer of the patterning step of the 2nd layer, the galaxies of the 2nd layer are like the side device of the sensible plasmonic type, etc. 25/40 201210308 =, using dry rot that is highly anisotropic and can be vertically excavated In the second etching layer step, the insulating layer 1〇〇c is used as the surname stop layer. After the second lithographic layer patterning step described above, the s?i substrate is immediately etched from the other surface (second surface) side of the s〇i substrate 100, and the 'color, ' 彖 layer lGGe is not required. A portion of the insulating layer patterning step forms the mirror-forming substrate 1. Next, the second resist layer 131 and the third resist layer 13 are removed. Further, the tantalum oxide film mb is removed. Thereafter, a bonding step of bonding the reverse-shaped wire plate and the lid substrate 2 and the second substrate 3 by means of anode bonding or the like is performed to obtain the mirror 403 of the configuration shown in Fig. 5F. In the above-described bonding step, the mirror surface 21 of the protective mirror forming substrate 1 is formed so that the mirror forming substrate is formed after the first bonding process of bonding the second lid substrate 2 and the mirror forming substrate 1 is performed. It is preferable that the second bonding process in which i and the second turn substrate 3 are joined is preferable. Here, in the j-th joining process, first, the first glass substrate 2 is formed with the second recessed portion 20 or the second cover substrate 2 such as the through-holes 2〇2 and the mirror-forming substrate. The laminated body is heated to a predetermined bonding temperature (for example, ~4〇〇〇c or so) in a vacuum of a predetermined degree of vacuum (for example, 1 〇Pa or less) in the first shoal layer. Between the 〇a and the first lid substrate 2, the first lid substrate 2 side a is again on the low potential side and a predetermined voltage is applied (for example, *(8)v to 8〇〇v or so). This state is maintained only for a predetermined bonding time. (For example, 2 minutes to 60 minutes or so). Further, in the second bonding process, the anode bonding of the second buffer layer 100b and the second lid substrate 3 is performed in accordance with the above-described first bonding process. Further, the bonding method of bonding the mirror forming substrate 1 and the respective lid substrates 2, 3 is not limited to anodic bonding, and for example, a room temperature bonding method or the like may be used. 26/40 201210308 In addition, after the first correction step, the plate 100 and the first lid substrate 2 may be formed, and then the second layer of the slabs and the steps of the insulation layer are turned into The mirror forms the second substrate Z, and the mirror-forming substrate 1 and the second lid substrate 3 are combined. Interesting attention Next, the operation of the MEMS mirror 403 will be described. In the MEMS mirror 403, the movable portion is biased by the pair of pads 13, 13 to apply a force between the pair (10) and the fixed electrode 2, whereby the first movable electrode 22 is second. The 12 m electrostatic force 'movable portion 20 is rotated around the y-axis direction. On the other hand, in the MEMS mirror 403, the movable portion 20 can be shaken by periodically generating an electrostatic force by applying a predetermined pulse voltage to the second movable electrode 22 and the jth. Between the above, the movable portion 2〇 of the above-mentioned movable portion is stationary due to the internal stress, and the water is still tilted with the xy plane gas, so for example, when the first! movable electrode 22i is solid = less 12 When a pulse voltage is applied, even if it is in a stationary state, the portion 20 applies a drive in a slightly vertical direction (z-axis direction), and the pair of i-th torsion spring portions 3〇 and 3〇 are the torsion portion 20 1 torsion spring portions 30, 30 - side rotation j reverses the door of the pair 22 and the second fixed electrode 12, and the movable power is fixed in the movable comb-shaped fine-skinned solid sheet b. In such a posture, it is rotated by 30: while continuing to move in the movable portion 2: (4) When the opponent i turns the reel portion 3G, 3G, the rotation of the movable portion 2G toward the rotation direction is stopped. At this time, when the electrostatic field force is applied between the movable electrode 22 and the first fixed electrode 12 by the pulsed field 27/40 201210308, the movable portion 20 utilizes a recovery force of 3 〇 and a driving force of the first driving means = rotation. The direction of the spring portion 30 is reversed in the opposite direction. The movable portion 2 is connected to the current driving means. The driving force and the twisting of the first 丨 箬 ^ ^ 进行 依据 依据 依据 依据 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 ' ' 第The driving voltage of the 电极 of the fixed electrode 12 is mixed, and the solution is fixed. For example, the voltage applied between the first movable electrode 22 and the first fixed electrode U is a sinusoidal voltage. In the mirror 4〇3, for example, the potential of the spacer (3) electrically connected to the movable electrode 22 and the second fixed electrode 26 is used as a reference potential, and the respective positions of the first fixed electrode 2 and the second movable electrode 2 7 are set. The periodic change is performed, whereby the movable portion 2 can be rotated around the axis of the pair of the second torsion spring portions 30, 30, and the mirror portion can be surrounded by the axes of the pair of second torsion spring portions 25, 25. In the MEMS mirror 403 of the present embodiment, the pulse voltage for driving the movable portion 2 is applied to the opposite third fixed electrode 12 and the first movable electrode via the pair of spacers 13b and 13a. Between 22, an electrostatic force is generated between the first fixed electrode 12 and the jth movable electrode 22, and the movable portion 20 is wound around the y-axis direction. In the MEMS mirror 403, a pulse voltage for driving the mirror portion 24 is applied between the second fixed electrode 26 and the second movable electrode 27 via a pair of spacers 13a and 13c. 2, an electrostatic force is generated between the fixed electrode 26 and the second movable electrode 27, and the mirror portion 24 is rotated about the X-axis direction. In the MEMS mirror 403 of the present embodiment, the first fixed electrode 12 and the first fixed electrode 12 A predetermined first driving frequency of 28/40 201210308 is applied between the movable electrodes 22, and an electrostatic force can be generated periodically, so that the movable portion can be added to the whole, and the second electrode 26 can be used. A pulse voltage of a predetermined second driving frequency is applied between the second movable electrodes 27 to generate a pure force periodically, and the mirror portion 24 of the movable portion 2G can be shaken. In addition, the wire plate is formed on the surface surrounded by the outer portion 1G and the cover substrate 2, and the surface of the portion of the 11th layer which is not formed with the reversed layer is formed with the tantalum oxide film Ilia (refer to FIG. 5F). ). In the Yana mirror 403 of the present embodiment, a resonance between the i-th fixed electrode 12 and the i-th movable electrode 22 is performed by a movable portion such as a pair of i-th torsion spring portions 30 and 3G. The frequency is large: a pulse voltage of twice the frequency, and the movable portion 2 is driven by the resonance phenomenon (the inclination is large when the horizontal plane is parallel to the xy plane). Further, the mems reflection in the present embodiment In the middle of the mirror, the vibration system composed of the mirror portion 24 and the second torsion spring portions 25 and 25 is applied between the second fixed electrode 26 and the second movable electrode 27, and the resonance frequency is approximately twice the resonance frequency. The pulse voltage is driven by the phenomenon of the mirror portion, and the mechanical deflection angle (inclination with respect to the surface parallel to the surface on the side of the first cover substrate 2 in the movable frame portion) becomes large. Further, the determination unit is provided in a control device (not shown) that drives the agricultural device, the driving device '', and the page display field 411 by the i-th laser that drives the laser for scanning 4〇1. a second laser driving device and a mirror drive for controlling the driving of the MEMS mirror 403 The mirror driving device is a second driving means including a first means, a second movable electrode 27, and a second mosquito electrode 26, which are composed of the i-th movable electrode 22 and the i-th fixed electrode, And a power supply mechanism 29/40 201210308 for applying a second driving voltage to the first driving means and applying a second driving voltage to the second driving means. The control device is: in the mirror driving device, The first DC bias voltage for detecting the mechanical deflection angle of the movable portion 20 with respect to the fixed frame portion 1 is superimposed on the first driving voltage applied to the first driving means of the MEMS mirror 403 from the power source, and The second DC bias voltage for detecting the mechanical deflection angle of the mirror portion 24 with respect to the movable frame portion 23 is superimposed on the second driving voltage applied to the second driving means of the MEMS mirror 403 from the power source. The tilt of the portion 23. The above control device is a fiber. The control device can be relied upon by
所示’在屋内的壁面460 此處，由於因應可動部20相對於固定框部1〇之相對 的位置（機械偏轉角）的變化’在第1直流偏電壓會產生 微小的電壓變化，在上述控制裝置♦，藉由監視用以驅動 可動部20的一對墊片13b、13a間的第j直流偏電壓，能| 偵測可動部20相對於固定框部10之傾斜。又，因應反射 鏡^ Μ相對於可動框部23之相對的位置（機械偏轉角） 的變化，第2直流偏電壓會產生微小的電壓變化，所以在、 上述控制裝置’監視用以驅動反射鏡部24的一對墊片i如、 13c間之第2直流偏電壓，藉此可偵測反射鏡部以相對於 30/40 201210308 的門470附近設置顯示部41〇，可於顯示部41〇顯示控制外 部機器（例如，照明器具、冷氣、電視等）ΟΝ/OFF用的假 想開關（以下，稱為虛擬開關）440的像，並可偵測在偵測 對象空間405内的任意位置有無物體406。在圖9的例子 中，虛擬_ 440的像中，在r〇N」的文字左側的四角形 $像所成之假想的第i開關要素441的位置有物體4〇6的 $況、和在「OFF」白勺文字左側的四角形的像所成之假想的 第2開關要素442的位置有物體4〇6的情況，可在上述判 斷部中作判別。因此，若事先設有可因應上述判斷部的判 別結果，將用以對***於外部機器與朝該外部機器供給電 力的電源之間的開關進行0N/0FF控制的遙控信號朝外部 機器傳送喃送部（天料），則在未於翻的牆壁等之建 構材形成用以將嵌入型的配線器具的一種、即嵌入型的開 關專埋入的肷入孔、及將用以施加嵌入型的配線器具的先 行配線設置在牆壁裏等之下，藉由將顯示部41〇設置在由 建構材的表面所成的壁面460即可設置虛擬開關44〇。此 外，在將顯示部410設置在建構材時，例如只要利用預設 在背面側的感壓性的接著劑等貼附在建構材上即可。 上述的感測裔裝置係如圖7所示，具備有：用以收納 偵測用雷射40卜半鏡402、MEMS反射鏡403、光檢測部 404、顯不用雷射4U、分光鏡412及透鏡4〇7等之框體420。 此外’在框體420内形成有通過部（未圖示），該通過部讓 在MEMS反射鏡403反射且朝向偵測對象空間側的偵 測用雷射光LB1 (參照圖1B)及顯示用雷射光£]32 (參照 圖1D)、以及在偵測對象空間4〇5内的顯示部41〇或在物 體406反射且朝向MEMS反射鏡403的偵測用雷射光 31/40 201210308 (參照圖1C)通過。此通過部亦可為貫通孔，亦可為利用 透射偵測用雷射光LB1及顯示用雷射光^^的材料所形成 者。又，在框體420内配置有將偵測用雷射4(H、半鏡、 MEMS反射鏡403、光檢測部404、顯示用雷射411、分光 鏡4】2、透鏡407等予以定位保持的保持構件（未圖示）。 此外，在上述的感測器裝置中’偵測用雷射光的 一部分係在半鏡4〇2或MEMS反射鏡彻等散射或在框體 420的内面反射，而成為到達光檢測部4〇4的受光面牝乜 之漫射光，致使會有降低光檢測部4〇4輸出的S/N比之虞。 於疋，感測器裝置係以具備有配置在偵測用雷射光 LB1及顯示用雷射光LB2的光路㈣邊朋以遮蔽漫射光 的遮光用構件43G者較佳。在感測器裝置中，藉由設置遮 光用構件430 ’可減低到達光檢測部404㈣射光，能圖謀 提升光檢測部樹輸出的S/N比。遮光用構件伽雖係利 用黑色的樹脂之成形品所構成’但只要能遮蔽漫射光即 可’遮光用構件430的材料或形成方法並未特別限定。此 外，圖示例中雖設有6個遮光用構件430，但遮光用構件 430的數量並未特別限^，亦可為】個。 又，感測器裝置係以框體420的内面成為散射漫射光 的粗糖面者難。據此，感測器裝置係可減低到達光檢測 部404的受光面404a之漫射光。在將框體42〇 的内面做成 粗I面的加工方法方面，例如有噴砂加工等。又，減低射 =到框體420的内面並到達光檢測部楊的受光面购之 漫射光的手段’不限騎框體420 _面做絲糙面的例 子例士在框體420的材料是金屬的情況，可將框體420 的内面側以黑色的塗裝材料塗裝，亦可形成黑色的对酸銘 32/40 201210308 (alumite)。 在組裝上述的感測器裝置時，首先，準備一個構成框 體420的一部分之主體420a (參照圖8A)，在主體420a安 裝上述保持構件之後，如圖8B所示，在主體420a内配置 偵測用雷射401、半鏡402、MEMS反射鏡403、光檢測部 4〇4、顯示用雷射411、分光鏡412、透鏡407等，驅動偵 測用雷射401並以使光檢測部404的輸出成為最大的方式 來調整光轴（進行被動校準）。接著，如圖8C所示，配置 遮光用構件430。之後，將構成框體420的蓋（未圖示）連 同主體420a —起結合於主體420a上即可。 在以上所說明的本實施形態的感測器裝置中，係具 備·偵測用雷射401，半鏡402，其係反射及透射從偵測用 雷射401射出的偵測用雷射光LB1 ; MEMS反射鏡， 其係使在半鏡402反射的偵測用雷射光LB1朝偵測對象空 間405側反射；光檢測部404，其隔著半鏡402而位在MEMS 反射鏡403的相反側、且檢測在偵測對象空間4〇5内的物 體406反射後且藉由MEMS反射鏡403反射的偵測用雷射 光LB1 ;及上述判斷部’其依據光檢測部4〇4的輸出以判 斷偵測對象空間405内有無物體406，由於使偵測用雷射 401與MEMS反射鏡403之間的光軸OA1及MEMS反射 鏡403與光檢測部404之間的光轴〇A2，在MEMS反射鏡 403與半鏡402之間一致，故不易受干擾光影響，且可小型 化。 又，本實施形態的感測器裝置中，係具備：顯示部41〇， 其係配置在偵測對象空間405内；顯示用雷射411 ;及分光 鏡412 ’其係位在偵測用雷射401與半鏡402之間，且龍顯 33/40 201210308 示用雷射411射出的顯示用雷射光LB2而朝半鏡402側反 射’且來自於偵測用雷射401的偵測用雷射光LB1透射， 由於半鏡402是使來自於顯示用雷射401的顯示用雷射光 LB2朝MEMS反射鏡403側反射，所以在用以使像顯示於 顯示部410的光學系上和在用以偵測物體406的光學系上 共用半鏡402及MEMS反射鏡403，故能將兩光學系之光 軸的大部分對齊於同軸上，相較於在彼等之光學系設定各 別的光路徑之情況，可圖謀小型化及輕量化，而且可精度 良好地使得在偵測對象空間405内之偵測用雷射光LB1與 顯示用雷射光LB2之光路徑一致。 此外，感測器裝置不限為圖1A的構成之配置，例如亦 可以是圖10所示構成之配置。此處，光檢測部404係檢測 在半鏡402反射之偵測用雷射光LB1。在此圖10的構成中 亦與圖1A的構成同樣，使偵測用雷射401與MEMS反射 鏡403之間的光軸OA1及MEMS反射鏡403與光檢測部 404之間的光軸OA2，在MEMS反射鏡403與半鏡402之 間一致。在圖10的例子中，半鏡402前述半鏡係配置成： 從偵測用雷射401射出的偵測用雷射光之一部分透射半鏡 402並射入至光學反射鏡403，且在偵測對象空間405側反 射的偵測用雷射光的一部分會藉由半鏡402而朝光檢測部 404側反射。MEMS反射鏡403係配置成：使透射半鏡402 的偵測用雷射光LB1藉由鏡面21而朝偵測對象空間侧405 反射，且使在偵測對象空間405内的物體406或顯示部410 反射之彳貞測用雷射光藉由其自身的鏡面21和半鏡402而反 射至光檢測部404側。 又’上述的各感測器裝置中雖具備有顯示用雷射4丨2、 34/40 201210308 顯示部41G等，但彼等只要因應感⑼器裝置的 用远作適且设置即可。又，右卩接In the case of the wall 460 in the house, a slight voltage change occurs in the first DC bias voltage due to the change in the relative position (mechanical deflection angle) of the movable portion 20 with respect to the fixed frame portion 1 The control device ♦ can detect the inclination of the movable portion 20 with respect to the fixed frame portion 10 by monitoring the jth DC bias voltage between the pair of pads 13b and 13a for driving the movable portion 20. Further, in response to a change in the relative position (mechanical deflection angle) of the mirror Μ relative to the movable frame portion 23, a slight voltage change occurs in the second DC bias voltage, so that the control device 'monitor drives the mirror The pair of pads i of the portion 24 have the second DC bias voltage between the blocks 13c, whereby the mirror portion can be detected to provide the display portion 41〇 in the vicinity of the door 470 of 30/40 201210308, and can be displayed on the display portion 41. An image of a virtual switch (hereinafter referred to as a virtual switch) 440 for controlling an external device (for example, lighting fixture, air conditioner, television, etc.) ,/OFF is displayed, and an object at any position within the detection target space 405 can be detected. 406. In the example of FIG. 9, in the image of the virtual _440, the position of the virtual i-th switch element 441 formed by the quadrangle $ image on the left side of the character of r〇N" has the value of the object 4〇6, and " When the position of the virtual second switching element 442 formed by the quadrangular image on the left side of the text is OFF, the object 4〇6 may be determined. Therefore, if a determination result in accordance with the determination unit is provided in advance, a remote control signal for performing ON/OFF control on a switch inserted between an external device and a power source that supplies electric power to the external device is transmitted to the external device. In the Ministry of Construction, a building material such as an embedded type switch, which is embedded in a wall or the like, is formed, and an insertion hole for embedding an embedded type switch, and an insertion type for embedding the type. The preceding wiring of the wiring device is placed under a wall or the like, and the virtual switch 44A is provided by providing the display portion 41A on the wall surface 460 formed by the surface of the building material. In addition, when the display portion 410 is placed on the building material, for example, it may be attached to the building material by a pressure-sensitive adhesive or the like that is preset on the back side. As shown in FIG. 7 , the sensing device is provided with a laser 40 for detecting, a MEMS mirror 403, a light detecting unit 404, a laser 4U, a beam splitter 412, and The frame 420 of the lens 4〇7 or the like. Further, a passage portion (not shown) is formed in the casing 420, and the passage portion allows the detection laser light LB1 (see FIG. 1B) and the display radar to be reflected by the MEMS mirror 403 toward the detection target space side. The light is projected on the display portion 41 in the detection target space 4〇5 or the detection laser light 31/40 reflected in the object 406 and directed toward the MEMS mirror 403 201210308 (refer to FIG. 1C) )by. The passage portion may be a through hole, or may be formed of a material that uses the transmission detecting laser light LB1 and the display laser light. Further, in the housing 420, the detection laser 4 (H, half mirror, MEMS mirror 403, light detecting portion 404, display laser 411, beam splitter 4) 2, lens 407, and the like are positioned and held. a holding member (not shown). Further, in the above-described sensor device, a part of the detecting laser light is scattered in the half mirror 4 〇 2 or the MEMS mirror or reflected on the inner surface of the frame 420. The diffused light that has reached the light-receiving surface of the light detecting unit 4〇4 causes the S/N ratio of the output of the light detecting unit 4〇4 to be reduced. The sensor device is disposed in the sensor device. It is preferable that the light-receiving member 43G for shielding the laser beam LB1 and the display laser light LB2 to shield the diffused light is provided. In the sensor device, the light-receiving member 430' can be provided to reduce the arrival light detection. The portion 404 (four) emits light, and can improve the S/N ratio of the output of the light detecting portion tree. The light shielding member is formed of a molded article of a black resin, but the material of the light shielding member 430 or the light shielding member 430 can be shielded. The formation method is not particularly limited. In addition, although there are 6 in the example of the figure Although the number of the light-shielding members 430 is not particularly limited, the number of the light-shielding members 430 may be one. The sensor device is difficult to form the rough sugar surface on which the diffused light is scattered on the inner surface of the frame 420. The sensor device can reduce the diffused light reaching the light receiving surface 404a of the light detecting portion 404. For the processing method of forming the inner surface of the frame 42A into a rough surface, for example, sandblasting or the like is performed. The means for the diffused light of the light-receiving surface of the light-detecting portion of the light-receiving portion is not limited to the case where the material of the frame 420 is metal, and the material of the frame 420 is metal. The inner surface side of the frame 420 is coated with a black coating material, and a black scorpion 32/40 201210308 (alumite) can be formed. When assembling the above-described sensor device, first, a frame 420 is prepared. A part of the main body 420a (see FIG. 8A), after the holding member is attached to the main body 420a, as shown in FIG. 8B, the detecting laser 401, the half mirror 402, the MEMS mirror 403, and the light detecting portion 4 are disposed in the main body 420a. 〇4, display laser 411, beam splitter 412, lens 407 The detection laser 401 is driven to adjust the optical axis (passive calibration) so that the output of the photodetecting portion 404 is maximized. Next, as shown in Fig. 8C, the light shielding member 430 is disposed. The cover (not shown) of the body 420 may be coupled to the main body 420a together with the main body 420a. In the sensor device of the embodiment described above, the detection laser 401 and the half mirror 402 are provided. The detection laser light LB1 is reflected and transmitted from the detecting laser 401; the MEMS mirror is configured to reflect the detecting laser light LB1 reflected by the half mirror 402 toward the detecting object space 405 side; The light detecting unit 404 is positioned on the opposite side of the MEMS mirror 403 with the half mirror 402 interposed therebetween, and detects the reflection of the object 406 in the detection target space 4〇5 and is reflected by the MEMS mirror 403. The laser light LB1; and the determination unit 'determines the presence or absence of the object 406 in the detection target space 405 according to the output of the light detecting unit 4〇4, because the optical axis OA1 between the detecting laser 401 and the MEMS mirror 403 is made. And an optical axis 〇A2 between the MEMS mirror 403 and the light detecting portion 404, Since the MEMS mirror 403 and the half mirror 402 are identical, they are less susceptible to interference light and can be miniaturized. Further, in the sensor device of the present embodiment, the display unit 41A is disposed in the detection target space 405; the display laser 411; and the beam splitter 412' is positioned in the detection thunder Between the 401 and the half mirror 402, and the dragon display 33/40 201210308 shows the display laser light LB2 emitted by the laser 411 and reflects toward the half mirror 402 side and the detection mine from the detection laser 401 The light LB1 is transmitted, and the half mirror 402 reflects the display laser light LB2 from the display laser 401 toward the MEMS mirror 403 side. Therefore, the image is displayed on the optical system for displaying the image on the display unit 410. The optical system of the detecting object 406 shares the half mirror 402 and the MEMS mirror 403, so that most of the optical axes of the two optical systems can be aligned on the coaxial line, and the respective light paths are set in comparison with the optical systems of the optical systems. In this case, it is possible to reduce the size and weight of the image, and it is possible to accurately match the light path of the detection laser light LB1 and the display laser light LB2 in the detection target space 405. Further, the sensor device is not limited to the configuration of the configuration of Fig. 1A, and may be, for example, a configuration of the configuration shown in Fig. 10. Here, the light detecting unit 404 detects the detecting laser light LB1 reflected by the half mirror 402. Similarly to the configuration of FIG. 1A, the optical axis OA1 between the detecting laser 401 and the MEMS mirror 403 and the optical axis OA2 between the MEMS mirror 403 and the light detecting portion 404 are also formed in the configuration of FIG. It is consistent between the MEMS mirror 403 and the half mirror 402. In the example of FIG. 10, the half mirror 402 is configured such that one of the detecting laser light emitted from the detecting laser 401 partially transmits the half mirror 402 and is incident on the optical mirror 403, and is detected. A part of the detection laser light reflected by the object space 405 side is reflected by the half mirror 402 toward the light detecting portion 404 side. The MEMS mirror 403 is configured such that the detection laser light LB1 of the transmission half mirror 402 is reflected toward the detection object space side 405 by the mirror surface 21, and the object 406 or the display portion 410 in the detection target space 405 is caused. The reflected laser light for reflection is reflected to the side of the light detecting portion 404 by its own mirror surface 21 and half mirror 402. Further, each of the above-described sensor devices includes a display laser 4, 2, 34/40, 201210308 display portion 41G, and the like, but they may be provided as long as they are suitable for use in the device. Again, right click
〜 有關構成先學反射鏡的MEMS ，、兄，不疋臧要將偵測用雷射光LB1作二維， 亦可因應感應裝置㈣途將反射方向固定在 二二 向。又，物體400不限為人的手指。 、一 本發明雖針對幾個較佳實施形態作了敘述，但 ^轉離本發明原來的精神及範圍、即申請專利^之 下進彳于各種修正及變形。 【圖式簡單說明】 圖1A至圖1D係例示本發明之實施形態的感測器装置 圖1A是概略構成圖，圖1B至圖1〇是動作說明圖。、 圖2係該感測器裝置的要部概略斜視圖。 圖3係該感測器裳置中的光學反射鏡之概略分解斜視 圖4係該感測器裝置中的光學反射鏡之概略斜視圖。 圖5A至圖5F係用以說明該感測器裝置中的光學反射鏡 之製造方法的主要步驟剖面圖。 兄 圖6A及圖6B係該感測器裝置的動作說明圖。 圖7係該感測器裝置之要部概略俯視圖。 圖8A至圖8C係該感測器裝置的組裝方法之說明圖。 圖9A及圖9B係該感測器裝置之應用例的說明圖。 0 10係表示该感測器震置的其他構成例之概略構成圖 圖11係習知例的物體辨識感測器之概略構成圖。 【主要元件符號說明】 1 反射鏡形成基板 >· 35/40 201210308 2 第1蓋基板 3 第2蓋基板 10 外側框部 10a、20a 狹縫 12 第1固定電極 12b 固定梳齒片 13a、13b、13c 墊片 20 可動部 21 鏡面 21a 反射膜 22 第1可動電極 22a 梳骨部 22b 可動梳齒片 23 可動框部 24 反射鏡部 25 第2扭轉彈簧部 26 第2固定電極 26a 梳骨部 27 第2可動電極 27b 可動梳齒片 29 支持體 30 第1扭轉彈簧部 100 SOI基板 100a 第1石夕層（活性層） 100b 第2矽層（矽基板） 100c 絶緣層（Si02層） 36/40 201210308~ For the MEMS that constitutes the pre-learning mirror, brother, it is necessary to make the detection laser light LB1 two-dimensional, and the reflection direction can be fixed in the two-direction direction in response to the sensing device (four). Also, the object 400 is not limited to a human finger. The present invention has been described with respect to a few preferred embodiments, and it is to be understood that various modifications and changes can be made without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A to FIG. 1D are diagrams showing a sensor device according to an embodiment of the present invention. FIG. 1A is a schematic configuration view, and FIG. 1B to FIG. 2 is a schematic perspective view of an essential part of the sensor device. Figure 3 is a schematic exploded perspective view of the optical mirror in the sensor skirt. Figure 4 is a schematic oblique view of the optical mirror in the sensor device. 5A to 5F are cross-sectional views showing main steps of a method of manufacturing an optical mirror in the sensor device. Brothers Figs. 6A and 6B are explanatory views of the operation of the sensor device. Fig. 7 is a schematic plan view of a main part of the sensor device. 8A to 8C are explanatory views of a method of assembling the sensor device. 9A and 9B are explanatory views of an application example of the sensor device. 0 is a schematic configuration diagram showing another configuration example in which the sensor is placed. Fig. 11 is a schematic configuration diagram of an object recognition sensor according to a conventional example. [Description of main component symbols] 1 Mirror forming substrate> 35/40 201210308 2 First lid substrate 3 Second lid substrate 10 Outer frame portions 10a, 20a Slit 12 First fixed electrode 12b Fixed comb pieces 13a, 13b 13c spacer 20 movable portion 21 mirror surface 21a reflection film 22 first movable electrode 22a comb bone portion 22b movable comb piece 23 movable frame portion 24 mirror portion 25 second torsion spring portion 26 second fixed electrode 26a comb bone portion 27 Second movable electrode 27b movable comb piece 29 Support body 30 First torsion spring portion 100 SOI substrate 100a First layer (active layer) 100b Second layer (矽 substrate) 100c Insulation layer (SiO 2 layer) 36/40 201210308
Ilia ' 111b 矽氧化膜 130 第1抗蝕劑層 131 第2抗蝕劑層 132 第3抗蝕劑層 200、300 玻璃基板 201 第1凹部 202 貫通孔 301 第2凹部 300 第2玻璃基板 401 偵測用雷射 402 半鏡（分光鏡） 403 MEMS反射鏡 404 光檢測部（受光部） 404a 受光面 405 偵測對象空間 406 物體 407 透鏡 408 判斷部 410 顯示部 411 顯不用雷射 412 分光鏡 420 框體 420a 主體 430 遮光用構件 440 假想開關 414 像 37/40 201210308 LBl 偵測用雷射光 LB2 顯不用雷射光 OA1 光軸 OA2 光轴 38/40Ilia ' 111b tantalum oxide film 130 first resist layer 131 second resist layer 132 third resist layer 200, 300 glass substrate 201 first recess 202 through hole 301 second recess 300 second glass substrate 401 Measuring laser 402 half mirror (beam splitter) 403 MEMS mirror 404 light detecting portion (light receiving portion) 404a light receiving surface 405 detecting object space 406 object 407 lens 408 determining portion 410 display portion 411 displayless laser 412 beam splitter 420 Frame 420a Main body 430 Light-shielding member 440 Hypothetical switch 414 Image 37/40 201210308 LBl Detection laser light LB2 No laser light OA1 Optical axis OA2 Optical axis 38/40