201139753 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種電鍍方法及電解電鍍裝置。 【先前技術】 先前，·搭載於電子機器等之電路基板係以如下方式而製造 (參照專利文獻1、2)。 首先，準備具有絕緣層及形成於該絕緣層之其中一面之第 一金屬膜之基材。然後’藉由雷射等而於基材之上述絕緣層 形成孔。繼而，藉由光罩包覆第一金屬膜。其後，將基材浸 於電鑛液並進行電解電鍍。藉此於絕緣層之孔中形成通道。 其次，於絕、攀層之另一面側形成第二金屬膜，藉由I虫刻等 分別對第一金屬膜、第二金屬膜進行加工’藉此形成電路層。 [先前技術文獻] [專利文獻] 專利文獻1 :日本專利特開2007-188985號公報 專利文獻2:日本專利特開2〇〇5_272874號公報 【發明内容】 於此種製造方法中，當於絕緣層之孔内藉由電鍍法形成通 道時，若第一金屬膜之側面露出，則於第一金屬膜之側面析 出電鍍。於此情形時，第一金屬膜側面之面積與原本應析出 電鍍之孔面積相比為非常大，故優先進行電鍍之析出，難以 於孔内部進行電鍍。特別是於孔徑非常小之情形時，此種現 100102585 4 201139753 象較為顯著。 又，由於先前係使基材浸潰於電解電鍍液中，因此存在不 僅於第一金屬膜（導電層）表面，且於導電層側面亦有電鑛析 出之情形。存在因導電層之側面析出電鍍，導致難以於導電 層表面之所需之區域内使電鍍穩定析出之情形。 根據本發明，提供一種電鍍方法，其包含如下步驟：準備 具有形成有貫通孔之絶緣層、及設置於該絕緣層之一面且堵 塞上述貫通孔之其中一個開口之導電層的基材； 以於上述導電層上連接陰極同時使上述絕緣層之另一面 與陽極相對向之方式，於上述陽極之上方配置上述基材；及 於上述絕緣層之另一面與上述陽極之間流動電解電鍍 液，而於上述貫通孔内形成電鍍膜，同時將上述絕緣層之另 一面與上述陽極間之上述電解電鍍液排出至較上述絕緣層 之另一面更下方。 根據本發明，於絕緣層之另一面（與設置有導電層之面為 相反側之面）、與陽極之間流動電解電鍍液，而於貫通孔内 形成電鍍膜。並且，將電解電鍍液排出至較絕緣層之另一面 更下方。藉此，可抑制設置於絕緣層之其中一面上之導電層 之側面附著電解電鍍液，而於導電層之側面析出電鍍之情 形。 進而，根據本發明，亦可提供一種電解電鍍裝置，其係用 以於具有形成有貫通孔之絕緣層及設置於該絕緣層之其中 100102585 5 201139753 面且堵塞上述貫通孔之其中一個開口之導電層之基材的 上述貫通孔内進行電解電鍍者，且具備： 陰極，其係連接於上述導電層； 上述陽極，其係以與上述基材之另一面相對向之方式而配 置於上述基材之下方；及 電解電錄液供給部，其係使電解電鍍液流動於上述基材之 另一面與上述陽極間； «亥電解電鑛裝置係以如下方式構成：藉由上述電解電鍵液 供-β而於上述絕緣層之另一面與上述陽極之間流動電解 電鑛液’同時將上述絕緣層之另—面與上述陽極間之電解電 鍍液排出至較上述絕緣層之另一面更下方。 本發月者等人發現以上之課題，並提出—種電鍛方 法，其包含如下步驟：準備具_成有貫通孔之絕緣層及設 置於-亥絕緣層之其中一面且堵塞上述貫通孔之其中一個開 口之導電層的基材； 以於上述導電層上連接陰極，同時使上述絕緣層之另一面 與陽極相對向之方式’而於上述陽極之上方配置上述基材； 及於上述絕緣層之另—面與上述陽極之間流動電解電鍵 液而於上述貝通孔内形成電鑛膜，同時將上述絕緣層之另 -面與上述陽極間之上述電解電騎排出至較上述絕緣層 之另fir更下方。並且’本發明者等场現·於此種電鑛方 法中係化搬送方向而配置有複數個陽極，故可藉由控制流 100102585 201139753 動於各陽極與陰極間之電流量而形成所需之電錢膜。 即，根據本發明，可提供一種電錢方法，其係 1送具有形 成有貫通孔之絕緣層及設置於該絕緣 噌之其中一面且堵塞 上述貫通孔之其中-個開口之導電層之基材，並於上述貫通 孔内形成電解電鍍膜者，且包含如下步 於沿上述基材之搬送方向配置之複數個陽極之上方搬送 上述基材，同時於上述絕緣層之另1及與上述絕緣層之另 -面相對向之上述陽極之間流動電解電鍍液，而於上述貫通 孔内形成電鍍膜；及 將上述絕緣層之另—面與上述陽_之電解電賴排出 至較上述絕緣層之另一面更下方；且 於形成上述電鍍膜之上述步驟中，控制流動於各上述陽極 與上述陰極間之電流量。 根據本發明，於絕緣層之另一面（與設置有導電層之面為 相反側之面）、與陽極之間流動電解電鍍液’而於貫通孔内 形成電鍍膜。並且，將電解電鍍液排出至較絕緣層之另—面 更下方。藉此，可抑制設置於絕緣層之其中一面上之導電層 之側面附著電解電鍍液，而於導電層之側面析出電鍍之情 形。 進而，於形成電錢膜之上述步驟中，由於控制流動於各上 述陽極與上述陰極間之電流量，故可於貫通孔内形成所需之 電鍍膜。 100102585 7 201139753 一又，根據本發明，亦可提供—種電解電鑛裝置’其係用以 -面搬送具有形成有貫通孔之絕緣層及設置於該絕緣層之 其中一面且堵塞上述貫通孔之其中—個開口之導電層之基 材，一面於上述貫通孔内進行電解電鑛者，且具備： 陰極，其係連接於上述導電層； 送方向配置，同時隔開 複數個陽極，其係沿上述基材之搬 間隔而配置； 搬达手段’其係於上述陽極之上方一面使上述基材之上述 絕緣層之另—面與上述陽極相對向，—面搬送上述基材；及 電解電鑛祕給部，其魏電解_料躲上述基材之 上述絕緣層之面與上述各陽極之間. 置係以如下方式構成:藉由上述電解電鍍液 P於上述絕緣層之另—面與上述陽極之間流動電解電 鑛液汨時將上述絕緣層之另一面與上述陽極間之上述電解 電鐘液排出至較上述絕緣層之另一面更下方，且 。玄電解電鑛裝置具備㈣部’其係控制流動於各上述陽極 與上述陰極間之電流量。 進而，根據本發明，可提供一種電解電鍍裝置，其係用以 -面將具有導電層之基材於陽極上及電解電鍍液上搬送，一 面於上述基材上進行電解電鍍者，且具備： 上述陽極； 陰極’其係連接於上述導電層；及 100102585 201139753 搬送部’其係—面使上述基材之導電層表面與上述陽極對 向而夾持上述電解電鍍液，使上述導電層表面接觸於上述電 解電錢液，一面於上述陽極上及上述電解電鍍液上搬送上述 基材； 上述搬送部構成為以至少上述基材之導電層之周緣部之 一部分向上述電解電鍍液側之相反側翹曲之方式，一面保持 上述基材一面搬送上述基材。 於本發明中’一面使基材之導電層表面與陽極相對向，使 電解電舰接觸於導電層表©，-面於電解電舰上搬送基 材此時，由於搬送部係以至少基材之導電層之周緣部之一 π分向陽極相反側，即與電解電舰之相反她曲之方式， -面保持基材-面搬送基材，因此於至少基材之導電層之周 緣部之—部分難以接觸轉電鍍液。藉此，可抑制於向陽極 之相反趣曲之導電層之周緣部側面附著電解電鍍液，而於 導電層之側面析出電鍍之情形。 又，根據本發明’亦可提供—種制上述電解電鍍裝置之 電鍛方法。 即，根據本發明，亦可提供一種電錄方法，其係使用上述 電解電鍍裝置進行電解電鍍者，且包含如下步驟： 準備具有導電層之基材；及 ^00102585 9 201139753 於上述陽極上及上述電解電鍍液上搬送上述基材； 於搬送基材之上述步驟中，以至少上述基材之上述導電層 之周緣部之一部分向上述電解電鍍液側之相反側翹曲之方 式’ 一面保持上述基材一面於上述陽極及電解電鍍液上搬送 上述基材。 根據本發明’於絕緣層之另一面（與設置有導電層之面為 相反側之面）、與陽極之間流動電解電鍍液，而於貫通孔内 形成電鍵膜。並且，將電解電鍍液排出至較絕緣層之另一面 更下方。藉此’可抑制設置於絕緣層之其中一面上之導電層 之側面附著電解電鑛液，而於導電層之側面析出電鍍之情 形。藉此可於孔内部穩定地實施電鍍。 又’於本發明中，一面使基材之導電層表面與陽極相對 向’使電解電鍵液接觸於導電層表面，一面於電解電鍍液上 搬送基材。此時’由於搬送部係以至少基材之導電層之周緣 部之一部分向陽極之相反側，即電解電鍍液之相反側翹曲之 方式’ 一面保持基材一面搬送基材，故於至少基材之導電層 之周緣部之一部分難以接觸電解電鍍液。藉此，可抑制於向 陽極之相反側鍾曲之導電層之周緣部側面附著電解電鍍 液’而於導電層之侧面析出電鍍之情形。藉此可於導電層表 面穩定地實施電鍍。 【實施方式】 以下’根據圖式對本發明之第一實施形態進行說明。 100102585 10 201139753 參照圖1 進行說明。 圖 ，對本實施形態之電解電縣置2之概要 圖1係電解紐裝置2之平面圖，圖2係圖丨之㈣方 向之剖面圖’ ® 3係圖…㈣方向之剖面圖。 本實施形態之電解電舰置2係W於具有形成有貫通 孔111之絕緣層U及設置於該絕緣層u之其 貫通孔⑴之其中-個開口之導電層12的基材i之貫狐 111内進行電解電鍍者。 電解電鑛裝置2具備：陰極2G ’其係連接於導電層12; 陽極21，其係以與基材1之另—面相對向之方式配置於基201139753 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an electroplating method and an electrolytic plating apparatus. [Prior Art] The circuit board mounted on an electronic device or the like is manufactured as follows (see Patent Documents 1 and 2). First, a substrate having an insulating layer and a first metal film formed on one side of the insulating layer is prepared. Then, holes are formed in the above insulating layer of the substrate by laser or the like. Then, the first metal film is covered by the photomask. Thereafter, the substrate was immersed in an electric ore solution and subjected to electrolytic plating. Thereby, a channel is formed in the hole of the insulating layer. Next, a second metal film is formed on the other side of the climbing layer, and the first metal film and the second metal film are processed by I or the like to form a circuit layer. [Prior Art Document] [Patent Document] Patent Document 1: Japanese Patent Laid-Open No. Hei. No. 2007-188985. Patent Document 2: Japanese Patent Laid-Open Publication No. Hei. No. Hei. When a channel is formed by electroplating in the pores of the layer, if the side surface of the first metal film is exposed, plating is deposited on the side surface of the first metal film. In this case, the area of the side surface of the first metal film is extremely large as compared with the area of the hole to be deposited by electroplating. Therefore, precipitation by electroplating is preferentially performed, and it is difficult to perform electroplating inside the hole. Especially in the case of a very small aperture, such a 100102585 4 201139753 image is more prominent. Further, since the substrate is previously immersed in the electrolytic plating solution, there is a case where not only the surface of the first metal film (conductive layer) but also the side of the conductive layer is precipitated by electric ore. There is a case where plating is deposited on the side surface of the conductive layer, which makes it difficult to stably deposit plating in a desired region of the surface of the conductive layer. According to the present invention, there is provided a plating method comprising the steps of: preparing a substrate having an insulating layer formed with a through hole, and a conductive layer disposed on one surface of the insulating layer and blocking one of the openings of the through hole; The conductive layer is connected to the cathode while the other surface of the insulating layer faces the anode, and the substrate is disposed above the anode; and an electrolytic plating solution flows between the other surface of the insulating layer and the anode. A plating film is formed in the through hole, and the electrolytic plating solution between the other surface of the insulating layer and the anode is discharged to be lower than the other surface of the insulating layer. According to the invention, the electrolytic plating solution flows between the other surface of the insulating layer (the surface opposite to the surface on which the conductive layer is provided) and the anode, and a plating film is formed in the through hole. Further, the electrolytic plating solution is discharged to the lower side of the insulating layer. Thereby, it is possible to suppress the electrolytic plating solution from adhering to the side surface of the conductive layer provided on one side of the insulating layer, and to deposit plating on the side surface of the conductive layer. Furthermore, according to the present invention, an electrolytic plating apparatus for electrically conducting a conductive layer having a through hole and a surface of the insulating layer 100102585 5 201139753 and blocking one of the openings of the through hole may be provided. The electroplating is performed in the through-hole of the substrate of the layer, and includes: a cathode connected to the conductive layer; and the anode disposed on the substrate so as to face the other surface of the substrate And the electrolysis recording liquid supply unit is configured to flow the electrolytic plating solution between the other surface of the substrate and the anode; the «Electrical electrolysis ore device is configured as follows: by the electrolytic electrolysis liquid supply- And flowing the electrolytic electrowine between the other surface of the insulating layer and the anode, and discharging the electrolytic plating solution between the other surface of the insulating layer and the anode to the lower side than the other surface of the insulating layer. The present inventors have discovered the above problems and have proposed an electric forging method comprising the steps of: preparing an insulating layer having a through hole and one side of the insulating layer and blocking the through hole. a substrate of the conductive layer of the opening; the substrate is connected to the conductive layer, and the other surface of the insulating layer is opposed to the anode; and the substrate is disposed above the anode; and the insulating layer And flowing an electrolysis key solution between the other surface and the anode to form an electric ore film in the beacon hole, and discharging the electrolysis harness between the other surface of the insulating layer and the anode to the insulating layer The other fir is lower. Further, the inventors of the present invention have arranged a plurality of anodes in the electroplating method in the transport direction, so that the amount of current between the anodes and the cathodes can be formed by the control flow 100102585 201139753. Electric money film. That is, according to the present invention, there can be provided an electric money method which is provided with a substrate having an insulating layer formed with a through hole and a conductive layer provided on one of the insulating turns and blocking one of the openings of the through holes And forming an electrolytic plating film in the through hole, and comprising: transporting the substrate above a plurality of anodes disposed along a direction in which the substrate is conveyed, and simultaneously forming the insulating layer and the insulating layer An electroplating solution is formed between the anodes and the anodes, and a plating film is formed in the through holes; and the other surface of the insulating layer and the anode of the insulating layer are discharged to the insulating layer. The other side is further below; and in the above step of forming the plating film, the amount of current flowing between each of the anodes and the cathode is controlled. According to the invention, a plating film is formed in the through hole on the other surface of the insulating layer (the surface opposite to the surface on which the conductive layer is provided) and between the anode and the anode. Further, the electrolytic plating solution is discharged to the lower side of the insulating layer. Thereby, it is possible to suppress the electrolytic plating solution from adhering to the side surface of the conductive layer provided on one side of the insulating layer, and to deposit plating on the side surface of the conductive layer. Further, in the above step of forming the electric money film, since the amount of current flowing between each of the anode and the cathode is controlled, a desired plating film can be formed in the through hole. 100102585 7 201139753 Moreover, according to the present invention, an electrolytic electroplating apparatus can be provided which is configured to convey an insulating layer having a through hole formed therein and one side of the insulating layer and block the through hole. Wherein the substrate of the conductive layer of the opening is electrolyzed in the through hole, and includes: a cathode connected to the conductive layer; and arranged in the direction of the feed, and a plurality of anodes are separated The substrate is disposed at intervals of the substrate; the transfer means is disposed on the upper side of the anode, and the other surface of the insulating layer of the substrate is opposed to the anode, and the substrate is transferred to the surface; and the electrolytic ore is transported a secret portion, wherein the surface of the insulating layer of the substrate is separated from the anodes, and is formed by: the electrolytic plating solution P on the other side of the insulating layer and the above When the electrolytic electric sputum is flowing between the anodes, the electrolysis electric clock liquid between the other surface of the insulating layer and the anode is discharged to be lower than the other surface of the insulating layer. The Xuan Electrolytic Mine Apparatus has a (four) section that controls the amount of current flowing between each of the anodes and the cathode. Further, according to the present invention, there is provided an electrolytic plating apparatus for performing electrolytic plating on a substrate by transferring a substrate having a conductive layer on an anode and an electrolytic plating solution, and having: The anode; the cathode is connected to the conductive layer; and 100102585 201139753, the conveying portion is configured such that the surface of the conductive layer of the substrate faces the anode and sandwiches the electrolytic plating solution to bring the surface of the conductive layer into contact The substrate is transported on the anode and the electrolytic plating solution, and the transfer portion is configured such that at least one of a peripheral portion of the conductive layer of the substrate faces the opposite side of the electrolytic plating solution side In the manner of warping, the substrate is conveyed while holding the substrate. In the present invention, the surface of the conductive layer of the substrate is opposed to the anode, so that the electrolytic electric ship is in contact with the conductive layer, and the substrate is transported on the electrolytic electric ship. One of the peripheral portions of the conductive layer is π-divided to the opposite side of the anode, that is, the opposite of the electrolytic electric ship, the surface-maintaining substrate-side conveying substrate, and thus at least the peripheral portion of the conductive layer of the substrate - Partially difficult to contact with the plating solution. Thereby, it is possible to suppress the plating of the electrolytic plating solution on the side surface of the peripheral portion of the conductive layer opposite to the anode, and to deposit plating on the side surface of the conductive layer. Further, according to the present invention, an electric forging method of the above electrolytic plating apparatus can be provided. That is, according to the present invention, it is also possible to provide an electro-recording method which is performed by electroplating using the above electroplating apparatus, and includes the steps of: preparing a substrate having a conductive layer; and ^00102585 9 201139753 on the anode and the above The substrate is transported on the electrolytic plating solution; and in the step of transporting the substrate, at least one portion of the peripheral portion of the conductive layer of the substrate is warped to the opposite side of the electrolytic plating solution side The substrate is conveyed on the anode and the electrolytic plating solution. According to the present invention, an electroplating solution is formed on the other surface of the insulating layer (the surface opposite to the surface on which the conductive layer is provided) and the anode, and a via film is formed in the through hole. Further, the electrolytic plating solution is discharged to the lower side of the insulating layer. Thereby, it is possible to suppress the adhesion of the electrolyzed ore solution to the side of the conductive layer provided on one side of the insulating layer, and to deposit the plating on the side of the conductive layer. Thereby, electroplating can be stably performed inside the hole. Further, in the present invention, the surface of the conductive layer of the substrate is opposed to the anode, and the electrolytic key liquid is brought into contact with the surface of the conductive layer to transport the substrate on the electrolytic plating solution. In this case, at least the base portion of the conductive layer of the base material is bent toward the opposite side of the anode, that is, the opposite side of the electrolytic plating solution. One of the peripheral portions of the conductive layer of the material is difficult to contact with the electrolytic plating solution. Thereby, it is possible to suppress the plating of the electrolytic plating solution ' on the side surface of the peripheral portion of the conductive layer which is curved to the opposite side of the anode, and to deposit plating on the side surface of the conductive layer. Thereby, electroplating can be stably performed on the surface of the electroconductive layer. [Embodiment] Hereinafter, a first embodiment of the present invention will be described based on the drawings. 100102585 10 201139753 Description will be made with reference to FIG. 1 . BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view of an electrolysis device 2, and Fig. 2 is a cross-sectional view of a (4) direction of the figure (3). The electrolytic electric ship according to the present embodiment is a fox having a base layer i having an insulating layer U formed with a through hole 111 and a conductive layer 12 provided in one of the through holes (1) of the insulating layer u. Electrolytic plating is carried out in 111. The electrolytic ore unit 2 includes a cathode 2G' connected to the conductive layer 12, and an anode 21 disposed on the base opposite to the other surface of the substrate 1.
材！之下方；電解電鍍液供給部23，其係使電解電錢液L 流動於基材1之另一面與陽極21之n , 礓，及保持部（由搬送幸昆 25及陰極20構成），其係以於陽極 勿找21之上方保持基材】， 且陽極21與基材丨之另-面相對向之方式保持 。 電解電鍍裝置2係以如下方式構成· ' 再战.稭由電解電鍍液供终 部23於絕緣層11之另一面與陽極2 之間動電解電鍍液 L，同時將絕緣層11之另一面與陽极material! The electrolytic plating solution supply unit 23 is configured to cause the electrolytic money liquid L to flow on the other surface of the substrate 1 and the n and the anode of the anode 21, and the holding portion (consisting of the transfer of the Kunkun 25 and the cathode 20). The substrate is held above the anode 21, and the anode 21 is held opposite to the other side of the substrate. The electrolytic plating apparatus 2 is constructed as follows: 'Eight war. The straw is supplied from the electrolytic plating liquid supply end portion 23 to the electrolytic plating solution L between the other surface of the insulating layer 11 and the anode 2, and the other side of the insulating layer 11 is anode
、刼極21間之電解電鍍液L 排出至較絕緣層11之另一面更下方。 其次，對本實施形態之電解電鍍裝置2進行詳細說明。 首先，對成為電解電鍵裝置2之電鑛對象之基材！進行說 明。 如圖5所示，該基材i具備形成有貫通孔⑴之絕緣層 100102585 11 201139753 11及導電層12。 基材1例如為可撓性電路基板者。 絕緣層11例如為聚醯亞胺膜，且厚度為10# m〜200# m 左右。 絕緣層11上形成有貫通表面與背面之複數個貫通孔 111。該貫通孔111係以自絕緣層11之表面（其中一面）側朝 向背面（另一面）側直徑變大之方式形成，且為剖面錐形形 狀。 於絕緣層11之其中一面側設置有堵塞複數個貫通孔111 之開口之導電層12。導電層12為金屬膜，例如為銅膜。 導電層12之厚度例如為5〜50 //m。 如圖1〜圖4所示，本實施形態之電解電鍍裝置2具備陰 極20、陽極21、電解電鍍液供給部23、填充有電解電鍍液 L之電鍍槽24、搬送輥25、及支持構件26。 本實施形態之電解電鍍裝置2係藉由搬送輥25於電鍍槽 24上一面保持片材狀之基材1 一面搬送，並進行連續電鍵 之裝置。 電鍍槽24中填充有電解電鍍液L，例如硫酸銅等之電解 電鍍液。 陽極21並不浸潰於電鍍槽24中之電解電鍍液L中，而 是配置於較電鍍槽24中之電解電鍍液L之液面更上方。 此處，陽極21可為溶解性之陽極，亦可為不溶性之陽極。 100102585 12 201139753 1¼極21係由複數個金屬板211所構成，且配置於基材1 之搬送方向（圖1〜圖3之χ方向）及與搬送方向正交之方向 (圖1〜圖3之y方向）。例如’於將基材1之搬送方向設為 「列」、將與搬送方向正交之方向設為「行」之情形時，金 屬板211係以1 〇列χ2行之形式配置。 各金屬板211係由如圖4所示之支持構件26支持，且沿 基材1之搬送方向（X方向）相鄰之金屬板211彼此、及於與 基材1之搬送方向正交之方向（y方向）相鄰之金屬板211彼 此係隔開間隔而配置。 圖4(A)係支持構件％之平面圖，圖4(b)係圖4(A)之IV-IV 方向之剖面圖。 支持構件26係由例如絕緣性之材料所構成，且形成有用 以嵌入金屬板211之凹部261。於該支持構件26之中央， 形成有沿基材1之搬送方向延伸之貫通槽262。該貫通槽262 位於與基材1之搬送方向正交之方向上相鄰之金屬板211 間’且經由該貫通槽262將電解電鍍液L供給至基材1側。 如圖1及圖2所示，陽極21之寬度W1 (於本實施形態中， 為於與基材1之搬送方向正交之方向上排列之2片金屬板 211間之間隙及2片金屬板211之寬度之合計值）小於基材1 之寬度W2(與基材1之搬送方向正交之方向之長度）。 進而’於本實施形態中，支持構件26之寬度W3(與基材 搬送方向正交之方向之長度）小於基材1之寬度W2。 醜〇2585 13 201139753 .^ ^ '電鑓槽24上部側之俯視時，貫通槽262係位於 與基材搬送# 句正交之方向上排列之金屬板211間之間 隙’即與基材] 之搬送方向正交之方向之寬度W2之大致中 央處。 此處’如圖）_ 2所不，當於陽極21上搬送基材丨且使基材 1與陽極21 *日非 對向之狀態下，位於金屬板211之正上方之 基材1之導電麻 嘈12與金屬板211之間的距離H較佳為〇」 mm以上。 藉使距離為〇.1 mm以上，而具有避免基板丨與陽極21 之物理接觸，h , 防止因電流聚集引起之電鍍燒焦之現象之效 再者，距離灯 之上限值並無特別限定，但較佳為例如1〇 mm以下。 21更上方。該陰極 陰極2〇形成為輥狀且配置於較陽極 係以’、基材1表面之導電層12接觸之方式配置，並且作 為用以搬送基材1之搬送輥而發揮功能。 例如，如圖1、3所示，陰極20分別配置於基材1之搬送 方向基端側及前端側。 搬送輥25係於陽極21上搬送基材1者。 如圖2所示’電解電鍍液供給部23係將電鍍槽24中之電 解電鍍液L朝向配置於電鍍槽24上部之基材1供給者。電 解電鑛液供給部23係由例如泵P及連接於栗p之配管μ所 100102585 14 201139753 構成。 自電解電錢液供給部23排出之電解電鍍液L經由金屬板 211間之間隙（即貫通槽262)朝向基材1供給。 並且’如圖2所示’電解電鍍液l流動於基材1之絕緣 層u與各金屬板211之間，且由於自身重量自各金屬板211 • 之外側之羝部（與基材1之搬送方向正交之方向之端部）側朝 向下方落下。 再者，可構成為設置複數個電解電鍍液供給部23之配管 M遍及整個貫通槽262之長度方向而供給電解電鍍液L·， 或者亦可如圖9所示，構成為於貫通槽262之下方配置形成 有/σ貝通槽262之長度方向配置之複數個貫通孔281之板材 28經由複數個貫通孔281及貫通槽262，遍及整個貫通槽 262之長度方向而供給電解電鍍液l。 再者，圖9係於圖4(A)之ΙΧ-ΙΧ方向之剖面圖中添加板 材28之剖面圖。又，圖9之箭頭表示電解電鍍液L之流動。 -其次，對使用如上所述之電解電鍍裝置2之電鍍方法進行 說明。 首先，對本實施形態之電鍍方法之概要進行說明。 本實施形態之電鍍方法包含如下步驟：準備基材丨，該基 材1具有形成有貫通孔111之絕緣層u及設置於該絕緣層 11之其中一面且堵塞貫通孔lu之其中一個開口之導電層 12，以於導電層12上連接陰極2〇，同時使絕緣層u之另 100102585 15 201139753 一面與陽極21相對向之方式而於陽極21之上方配置基材 1 ;及 於絕緣層11之另一面與陽極21之間流動電解電鍍液，而 於貫通孔111内形成電鍍膜，同時將絕緣層11之另一面與 陽極21間之電解電鍍液排出至較絕緣層u之另一面更下 方。 繼而’對本實施形態之電鍍方法進行詳細說明。 首先，準備基材1。 雖未圖示’但基材1係捲繞成輥狀，經由搬送輥25及陰 極20而將基材1供給至電鍍槽24上。此時，係以導電層 12直接接觸陰極20之方式供給基材1。 再者，於電解電鍍之前段進行脫脂。 藉由搬送輥25及陰極20於電鍍槽24上搬送基材丨，此 時，將電鍍槽24中之電解電鍍液L自陽極21側朝向基材！ 供給至上方(參照圖2)。電解電鍍液L係經由形成於與陽極 21之基材搬送方向正交之方向上排列之金屬板2ΐι間之門 隙(本實施形態中為貫通槽262)而供給至基材丨之絕緣層u 之另一面與金屬板211之間。該電解電鍍液L亦供給至絕 緣層11之貫通孔111内。藉此，如圖2所示，金屬板 與絕緣層11間之間隙及貫通孔111内由電解電贫液L填 充，電解電鍍液L·與金屬板211及自貫通孔lu露 带 層12接觸，於貫通孔hi内部析出電鍍。 100102585 16 201139753 再者，基材1通過電鍍槽24上部之期間，自貫通槽262 連續地供給電解電鍍液L。因此，基材】通過電鐘槽24之 上部之期間，維持金屬板211與絕緣層n間之間隙及貫通 孔111内充滿電解電鍍液L之狀態。 如圖2所示’供給至基材J之絕緣層^之另一面與金屬 板211間之電解電鍍液乙由於自身重量而自金屬板川之外 侧之端部(與貝通槽262側為相反側之端部)側向較絕緣層u 之另一面更下方落下。 此處，如上所述，陽極21之寬度W1小於基材丨之寬度 W2 ’於自電鍍槽24上方之俯視時，基材1之端部較陽極 21之端部更向碁材搬送方向正交之方向（外側）突出。進而， 於本實施形態中’支持陽極21之支持構件26之寬度W3亦 小於基材1之寬度W2，基材1之端部自支持構件26亦向 外側突出。 因此，供給裏基材1之絕緣層11之另一面與金屬板211 間之電解電鍍浪L並不與絕緣層11上之導電層12之端部 或側面接觸，而是於電鍍槽24侧落下且藉由電鍍槽24回 收。藉此，可抑制於導電層12析出電鍍之情形。 再者，由電鍍槽24回收之電解電鍍液L再次藉由電解電 鍍液供給部23自貫通槽262朝向基材1側流動。 於電鍍槽24中’雖未圖示，但亦可藉由調整手段定期分 析電解電鍍液，並調整電解電鍍液L中之各成分之濃度。 100102585 17 201139753 於本實施形態中，基材1係不停止地通過陽極21上。於 基材1通過陽極21上之期間在貫通孔ill内實施電鑛。然 而，亦可使基材1 一面於陽極21上暫時停止一面通過複數 個陽極21上。 將貫通孔111内部已實施電鍍之基材1進行水洗，從而完 成貫通孔111内部已實施電鍍之基材1。 其後，視需要切割基材1 ’於基材1之絕緣層11之另一 面側黏附金屬膜。其後，選擇性去除導電層12及上述金屬 膜而形成電路層’從而獲得電路基板。該電路基板為可撓性 電路基板。 其次，對本實施形態之作用效果進行說明。 於本實施形態中，使絕緣層11之另一面與陽極21間之電 解電錢液L向較絕緣層11之另一面更下側流動，故可抑制 設置於絕緣層11之其中一面上之導電層12之側面附著電解 電鍍液L，而於導電層12之側面析出電鍍之情形。藉此， 可於貫通孔111内部穩定地實施電鍍。 特別是於本實施形態中，當使基材丨與陽極21相對向時， 陽極21之寬度W1小於基材1之寬度界2，且於自電鍍槽 24上方之俯視時’基材丨之端部較陽極21之端部更向與基 材搬送方向正交之方向（外侧）突出。進而，於本實施形態 中’支持陽極21之支持構件26之寬度W3亦小於基材j之 寬度W2 ’基材1之寬度方向之端部亦自支持構件％向外 100102585 201139753 側突出。 因此，陽極21與絕緣層11間之電解電鍵液L並不接觸 於絕緣層11之端部，而是排出至電鍍槽24側，故可確實地 抑制於導電層12之侧面析出電鍍之情形。 又，於如上所述之先前之製造方法中，存在於導電層析出 電鑛之課題。為解決該課題，例如考慮有於基材為非連續狀 形狀之情形時，藉由於導電層侧貼附樹脂等絕緣體板，其後 使用絕緣體之膠帶等密封電路基板之外周而將導電層表面 及側面與電鍍液隔離並進行電鍍之方法；或於基材為連續狀 形狀之情形時’將導電層及其侧面全部使用連續狀絕緣膠帶 包覆等之方法。 然而，該等方法均存在於電鍍前膠帶之黏附，進而電鐘後 之剝離作業中花費大量時間而無法提高生產性之問題。 相對於此，於本實施形態中，在基材丨之絕緣層u之另 一面（與設置有導電層之面為相反侧之面）與陽極2ι之間流 動電解電錢液L而於貫通孔U1内形成電鍍膜。並且，將電 解電鍍液L排出至較絕緣層n之另一面更下方。 U不接觸電 藉此’設置於絕緣層11之其中一面之導電層 解電鍍液L，故亦可不使用絕緣性之膠帶等包覆導電層12 因此，可節省於絕緣層11之貫通孔m 費之時間’從而可高效率地進行電鍍。 内之電鍍處理所花 L自構成陽極 進而，於本實施形態中，係使電解電鍍液 100102585 19 201139753 21之金屬板211間之間隙（貫通槽262)朝向基材1側流動至 上方。藉此可使電解電鍍液L穩定地流動於基材丨之絕緣 層11與陽極21之間。 例如，亦考慮有如圖6之箭頭所示，使電解電鍍液自基材 搬送方向基端側向基材1與陽極21之間的間隙流動。然而， 於增大電㈣24上之搬送距離之情形時，必須使電解電錢 液L自基材1之搬送方向基端側朝向搬送方向前端側非常 順勢地流動，而難以將電解電鍍液L穩定地供給至基材1 與陽極21之間。The electrolytic plating solution L between the drain electrodes 21 is discharged to the lower side than the other surface of the insulating layer 11. Next, the electrolytic plating apparatus 2 of the present embodiment will be described in detail. First, the substrate that becomes the electric ore object of the electrolytic key device 2! Be explained. As shown in FIG. 5, the substrate i includes an insulating layer 100102585 11 201139753 11 and a conductive layer 12 formed with a through hole (1). The substrate 1 is, for example, a flexible circuit board. The insulating layer 11 is, for example, a polyimide film having a thickness of about 10 #m to 200 #m. A plurality of through holes 111 penetrating the front surface and the back surface are formed in the insulating layer 11. The through hole 111 is formed to have a large diameter from the surface (one surface) side of the insulating layer 11 toward the back surface (the other surface) side, and has a tapered cross section. A conductive layer 12 that blocks an opening of the plurality of through holes 111 is provided on one surface side of the insulating layer 11. The conductive layer 12 is a metal film such as a copper film. The thickness of the conductive layer 12 is, for example, 5 to 50 //m. As shown in FIG. 1 to FIG. 4, the electrolytic plating apparatus 2 of the present embodiment includes a cathode 20, an anode 21, an electrolytic plating solution supply unit 23, a plating tank 24 filled with an electrolytic plating solution L, a transfer roller 25, and a support member 26. . The electrolytic plating apparatus 2 of the present embodiment is a device in which a transfer roller 25 is conveyed on the plating tank 24 while maintaining a sheet-like base material 1 and a continuous electric key is applied. The plating bath 24 is filled with an electrolytic plating solution L, for example, an electrolytic plating solution such as copper sulfate. The anode 21 is not immersed in the electrolytic plating solution L in the plating bath 24, but is disposed above the liquid level of the electrolytic plating solution L in the plating tank 24. Here, the anode 21 may be a soluble anode or an insoluble anode. 100102585 12 201139753 11⁄4 pole 21 is composed of a plurality of metal plates 211, and is disposed in the transport direction of the substrate 1 (the direction between FIGS. 1 and 3) and the direction orthogonal to the transport direction (FIG. 1 to FIG. 3). y direction). For example, when the direction in which the substrate 1 is transported is "column" and the direction orthogonal to the transport direction is "row", the metal plate 211 is arranged in a row of two rows. Each of the metal plates 211 is supported by the support member 26 as shown in FIG. 4, and the metal plates 211 adjacent to each other in the transport direction (X direction) of the substrate 1 and the direction orthogonal to the transport direction of the substrate 1 The adjacent metal plates 211 (in the y direction) are arranged at intervals. Fig. 4(A) is a plan view of the support member %, and Fig. 4(b) is a cross-sectional view taken along line IV-IV of Fig. 4(A). The support member 26 is made of, for example, an insulating material, and forms a recess 261 for inserting into the metal plate 211. A through groove 262 extending in the conveying direction of the base material 1 is formed at the center of the support member 26. The through groove 262 is located between the metal plates 211 adjacent to each other in the direction orthogonal to the conveying direction of the substrate 1, and the electrolytic plating solution L is supplied to the substrate 1 side via the through grooves 262. As shown in FIG. 1 and FIG. 2, the width W1 of the anode 21 (in the present embodiment, the gap between the two metal plates 211 arranged in the direction orthogonal to the conveying direction of the substrate 1 and the two metal plates) The total value of the width of 211 is smaller than the width W2 of the substrate 1 (the length in the direction orthogonal to the conveyance direction of the substrate 1). Further, in the present embodiment, the width W3 of the support member 26 (the length in the direction orthogonal to the substrate transport direction) is smaller than the width W2 of the substrate 1. Ugly 2585 13 201139753 .^ ^ 'When viewed from the upper side of the electric sump 24, the through groove 262 is located in the gap between the metal plates 211 arranged in the direction orthogonal to the substrate transporting sentence, ie, the substrate The width W2 of the direction orthogonal to the transport direction is substantially at the center. Here, as shown in FIG. 2, when the substrate is transported on the anode 21 and the substrate 1 and the anode 21 are not aligned, the substrate 1 located directly above the metal plate 211 is electrically conductive. The distance H between the paralysis 12 and the metal plate 211 is preferably 〇" mm or more. If the distance is 〇.1 mm or more, and the physical contact between the substrate 丨 and the anode 21 is avoided, h, the effect of electroplating and scorching caused by current concentration is prevented, and the upper limit of the distance lamp is not particularly limited. However, it is preferably, for example, 1 mm or less. 21 is even above. The cathode cathode 2 is formed in a roll shape and disposed so as to be in contact with the conductive layer 12 on the surface of the substrate 1 as the anode, and functions as a transfer roller for transporting the substrate 1. For example, as shown in Figs. 1 and 3, the cathodes 20 are disposed on the proximal end side and the distal end side of the substrate 1 in the transport direction, respectively. The conveying roller 25 is a member that conveys the substrate 1 on the anode 21. As shown in Fig. 2, the electrolytic plating solution supply unit 23 supplies the electrolytic plating solution L in the plating tank 24 toward the substrate 1 disposed on the upper portion of the plating tank 24. The electrolysis ore supply unit 23 is composed of, for example, a pump P and a pipe connected to the chestnut p, 100102585 14 201139753. The electrolytic plating solution L discharged from the electrolytic money supply unit 23 is supplied to the substrate 1 via a gap between the metal plates 211 (i.e., the through grooves 262). And 'as shown in FIG. 2', the electrolytic plating solution 1 flows between the insulating layer u of the substrate 1 and each of the metal plates 211, and is transferred from the outer side of each of the metal plates 211 to the substrate 1 due to its own weight. The end of the direction in which the directions are orthogonal to each other is dropped downward. In addition, the piping M in which a plurality of electrolytic plating solution supply units 23 are provided may be supplied to the electrolytic plating solution L· throughout the longitudinal direction of the through grooves 262, or may be configured as the through grooves 262 as shown in FIG. The plate material 28 in which the plurality of through holes 281 disposed in the longitudinal direction of the /σ passhole groove 262 are disposed is disposed through the plurality of through holes 281 and the through grooves 262, and the electrolytic plating solution 1 is supplied throughout the longitudinal direction of the through grooves 262. Further, Fig. 9 is a cross-sectional view showing the addition of the sheet material 28 in the cross-sectional view in the ΙΧ-ΙΧ direction of Fig. 4(A). Further, the arrows in Fig. 9 indicate the flow of the electrolytic plating solution L. - Next, a plating method using the electrolytic plating apparatus 2 as described above will be described. First, the outline of the plating method of the present embodiment will be described. The plating method of the present embodiment includes the steps of: preparing a substrate 具有 having an insulating layer u formed with a through hole 111 and a conductive layer provided on one surface of the insulating layer 11 and blocking one of the openings of the through hole lu The layer 12 is such that the cathode 2 is connected to the conductive layer 12, and the other substrate 100102585 15 201139753 of the insulating layer u is disposed opposite to the anode 21 on the side of the anode 21; and the insulating layer 11 is disposed on the other side. An electrolytic plating solution flows between the anode 21 and the anode 21, and a plating film is formed in the through hole 111, and the electrolytic plating solution between the other surface of the insulating layer 11 and the anode 21 is discharged to the lower surface of the insulating layer u. Next, the plating method of this embodiment will be described in detail. First, the substrate 1 is prepared. Although not shown in the drawings, the base material 1 is wound into a roll shape, and the base material 1 is supplied to the plating tank 24 via the transfer roller 25 and the cathode 20. At this time, the substrate 1 is supplied in such a manner that the conductive layer 12 directly contacts the cathode 20. Furthermore, degreasing is carried out before the electroplating. The substrate roll is transported on the plating bath 24 by the transfer roller 25 and the cathode 20. At this time, the electrolytic plating solution L in the plating tank 24 is directed from the anode 21 side toward the substrate! Supply to the top (refer to Figure 2). The electrolytic plating solution L is supplied to the insulating layer u of the substrate 经由 through a gate gap (through the groove 262 in the present embodiment) formed between the metal plates 2 排列 arranged in the direction orthogonal to the substrate transfer direction of the anode 21 The other side is between the metal plate 211. This electrolytic plating solution L is also supplied into the through hole 111 of the insulating layer 11. Thereby, as shown in FIG. 2, the gap between the metal plate and the insulating layer 11 and the through hole 111 are filled with the electrolytic poor liquid L, and the electrolytic plating solution L is in contact with the metal plate 211 and the through-hole exposed layer 12 The plating is deposited inside the through hole hi. 100102585 16 201139753 Further, while the substrate 1 passes through the upper portion of the plating tank 24, the electrolytic plating solution L is continuously supplied from the through grooves 262. Therefore, while the substrate is passing through the upper portion of the bell jar 24, the gap between the metal plate 211 and the insulating layer n and the state in which the electrolytic solution plating liquid L is filled in the through hole 111 are maintained. As shown in Fig. 2, the electrolytic plating solution B between the other side of the insulating layer supplied to the substrate J and the metal plate 211 is opposite to the outer side of the metal plate due to its own weight (opposite to the side of the Beton groove 262). The side of the side) is laterally lower than the other side of the insulating layer u. Here, as described above, the width W1 of the anode 21 is smaller than the width W2' of the substrate 于 in the plan view from above the plating tank 24, the end portion of the substrate 1 is more orthogonal to the end of the anode 21 than the end portion of the anode 21 The direction (outside) protrudes. Further, in the present embodiment, the width W3 of the supporting member 26 supporting the anode 21 is also smaller than the width W2 of the substrate 1, and the end portion of the substrate 1 is also protruded outward from the supporting member 26. Therefore, the electrolytic plating wave L between the other side of the insulating layer 11 supplied to the substrate 1 and the metal plate 211 is not in contact with the end portion or the side surface of the conductive layer 12 on the insulating layer 11, but falls on the plating bath 24 side. And recovered by the plating tank 24. Thereby, the plating of the conductive layer 12 can be suppressed. Further, the electrolytic plating solution L recovered by the plating tank 24 flows again from the through groove 262 toward the substrate 1 side by the electrolytic plating solution supply unit 23. Although not shown in the plating bath 24, the electrolytic plating solution may be periodically analyzed by an adjusting means, and the concentration of each component in the electrolytic plating solution L may be adjusted. 100102585 17 201139753 In the present embodiment, the substrate 1 passes through the anode 21 without stopping. The electric ore is applied to the through hole ill while the substrate 1 passes over the anode 21. However, it is also possible to allow the substrate 1 to pass through the plurality of anodes 21 while being temporarily stopped on the anode 21. The substrate 1 to which electroplating has been applied in the through hole 111 is washed with water to complete the substrate 1 on which the plating has been performed inside the through hole 111. Thereafter, the substrate 1' is cut as necessary to adhere the metal film to the other side of the insulating layer 11 of the substrate 1. Thereafter, the conductive layer 12 and the above metal film are selectively removed to form a circuit layer ', thereby obtaining a circuit substrate. This circuit board is a flexible circuit board. Next, the effects of the embodiment will be described. In the present embodiment, the electrolytic money liquid L between the other surface of the insulating layer 11 and the anode 21 flows downward from the other surface of the insulating layer 11, so that the conductive layer provided on one side of the insulating layer 11 can be suppressed. The electrolytic plating solution L is adhered to the side of the layer 12, and plating is deposited on the side of the conductive layer 12. Thereby, plating can be stably performed inside the through hole 111. In particular, in the present embodiment, when the substrate 丨 is opposed to the anode 21, the width W1 of the anode 21 is smaller than the width boundary 2 of the substrate 1, and the end of the substrate 俯视 is viewed from above the plating bath 24. The portion protrudes more toward the direction (outer side) orthogonal to the substrate conveying direction than the end portion of the anode 21. Further, in the present embodiment, the width W3 of the support member 26 supporting the anode 21 is also smaller than the width W2 of the substrate j. The end portion of the substrate 1 in the width direction also protrudes from the support member % outward 100102585 201139753 side. Therefore, the electrolytic key liquid L between the anode 21 and the insulating layer 11 is not in contact with the end portion of the insulating layer 11, but is discharged to the plating bath 24 side, so that the plating of the side surface of the conductive layer 12 can be surely suppressed. Further, in the prior art production method as described above, it exists in the problem of electroconductive chromatography. In order to solve this problem, for example, when the substrate has a discontinuous shape, an insulator plate such as a resin is attached to the conductive layer side, and then the outer surface of the circuit board is sealed with an insulating tape or the like, and the surface of the conductive layer is A method in which the side surface is isolated from the plating solution and subjected to electroplating; or in the case where the substrate is in a continuous shape, a method of coating the conductive layer and the side thereof with continuous insulating tape is used. However, these methods all exist in the adhesion of the tape before electroplating, and it takes a lot of time in the peeling operation after the electric clock to fail to improve the productivity. On the other hand, in the present embodiment, the electrolysis liquid L flows through the through hole in the other surface of the insulating layer u of the substrate ( (the surface opposite to the surface on which the conductive layer is provided) and the anode 2 A plating film is formed in U1. Further, the electrolytic plating solution L is discharged to the lower side than the other surface of the insulating layer n. U does not contact electricity to form a conductive layer de-plating solution L provided on one side of the insulating layer 11, so that the conductive layer 12 can be covered without using an insulating tape or the like. Therefore, the through-hole m of the insulating layer 11 can be saved. The time 'so that electroplating can be performed efficiently. Further, in the present embodiment, the gap (through groove 262) between the metal plates 211 of the electrolytic plating solution 100102585 19 201139753 21 flows upward toward the substrate 1 side. Thereby, the electrolytic plating solution L can be stably flowed between the insulating layer 11 of the substrate 与 and the anode 21. For example, it is also considered that the electrolytic plating solution flows from the base end side in the substrate transfer direction to the gap between the substrate 1 and the anode 21 as indicated by an arrow in Fig. 6 . However, in the case of increasing the transport distance on the electric (four) 24, it is necessary to make the electrolysis liquid liquid L flow very smoothly from the base end side of the transfer direction of the substrate 1 toward the front end side of the transport direction, and it is difficult to stabilize the electrolytic plating solution L. The ground is supplied between the substrate 1 and the anode 21.
相對於此，於本實施形態中，係於與基材搬送方向正交之 方向上相鄰之-對金屬板211間形成間隙，將電解電鍍液自 該間隙供給至基材1與陽極21之間，故即便電解電鍍液L 並非非常順勢地流動，亦可使電解電鑛液L於基材丄之絕 緣層11與陽極21之間穩定地流動。 進而，於本實施形態中，於與陽極21之基材搬送方向正 交之方向上相鄰之金屬板211間之間隙之位置(本實施形態 中為貫通槽262)係存在於基材i之寬度—方向之大致中心 處’故可使電解倾液L自貫通槽262向基材丨之端部側(沿 基材搬送方向之端㈣)大致均勻地軸，從而可穩定地實 施電鍍。 再者’本發明並不限定於上述之實施形態，於可達成本發 明之目的之範圍内之變形、改良等亦包含於本發明中。 100102585 20 201139753 例如，於上述實施形態中，係由複數片金屬板211構成陽 極21，但並不限定於此。例如，如圖7所示，亦可藉由— 片金屬板212構成陽極210。藉此，可簡化電鍍裝置之構成。 於此情形時，金屬板212上形成貫通孔212八，將電解電鍍 液L自貫通孔212A供給至基材1側即可。 然而，如上述實施形態般，若由複數片金屬板211構成陽 極21，則可將流動於各金屬板211與陰極2〇間之電流控制 為不同值。 由於貫通孔111為剖面錐形形狀，因此隨著電鍍不斷進 展，電鍍面積增加。因此，例如使流動於位於基材丨之搬送 方向基端侧之金屬板211與陰極2〇之間的電流值小於流動 於位於基材1之搬送方向前端側之金屬板211與陰極之 間的電流值’而可使被電鐘面上之電流密度固定。具體而言 如圖8所不’③置控制部27(此處為電阻），可使流動於各金 屬板211與陰極2〇間之電流量成為不同者。 又’於上述實施形態中，將貫通孔111設為剖面錐形狀， 但並不限定於此，亦可設為自貫通孔111之其中-個開口朝 向另-個開口直徑為均勻之形狀，例如為圓柱狀。 進而，於上述實施形態中，電解電鍵裝置2係一面於陽極 21上搬送基材1 一面連續地進行電鍍者，但並不限定於此， 亦可於使基材1停止於陽極Ή上之㈣下進行電缝。 進而’於上述實施形態中’電解電鍍裝置2由於搬送連續 100102585 21 201139753 狀之基材而具備搬送親，值並不限定於此，亦可作為非連續 狀之基材專狀裝置而不具備搬送輥。例如亦可設為單片式 之電解電鍍裝置。 又’基材1係設為可撓性電路基板用者，但並不限定於 此，亦可為剛性基板用者。 以下，根據圖式對本發明之第二實施形態進行說明。 參照圖10〜圖12對本實施形態之電鍍裝置2之概要進行 說明。 圖10係電鍍裝置2之平面圖，圖u係圖1〇之π π方向 之剖面圖，圖12係圖1〇之nI-m方向之剖面圖。 本實施形態之電鍍裝置2係用以一面搬送具有形成有自 其中一開口側朝向另一開口側直徑之大小發生變化之貫通 孔111之絕緣層11、及設置於該絕緣層u之其中一面且堵 塞上述貫通孔111之其中一個開口之導電層12之基材i， 一面於上述貫通孔111内進行電解電鍍者。 電解電鍍裝置2具備：陰極20，其係連接於導電層12 ; 複數個陽極21，其係沿基材1之搬送方向配置同時隔開間 隔而配置；搬送手段25，其一面於陽極21之上方使基材1 之上述絕緣層11之另一面與上述陽極21相對向，一面搬送 基材1 ;及電解電鍍液供給部23，其係使電解電鍍液流動於 基材1之絕緣層11之另一面與各陽極21之間。 該電解電鍍裝置2係以如下方式而構成：藉由電解電鍍液 100102585 22 201139753 供給部23於絕緣層u之另一面與陽極21之間流動電 鍵液L’㈤時將絕緣層u之另一面與陽極21㈤之上述電解 電鍍液L排出至較上述絕緣層π之另一面更下方。 又，電解電料置2具備控㈣27，其係控制流動於各 陽極21與陰極20間之電流量。 、 其次’對本實施形態之電解電鍍裝置2進行詳細說明。 首先，對成為電解電鍍裝置2之電鐘對象之基材丨進行說 明。 如圖14所示，該基材丨具備形成有貫通孔lu之絕緣層 11及導電層12。 基材1例如為可撓性電路基板者。 絕緣層11例如為聚醯亞胺膜，厚度為10#m〜2〇〇#m& 右。 絕緣層11上形成有貫通表面與背面之複數個貫通孔 ill "玄貝通孔ill係以自絕緣層π之表面（其中一面）側朝 向背面（另一面）側直徑變大之方式形成，且為剖面錐形形 狀。 於絕緣層11之其中一面侧設置有堵塞複數個貫通孔U1 之開口之導電層12 ^導電層12為金屬膜，例如為銅膜。 導電層12之厚度例如為5〜50 # m。 如圖10〜圖13所示，本實施形態之電解電鍍裝置2具備 上述陰極20、陽極21、電解電鍍液供給部23、搬送手段25、 100102585 23 201139753 24及支持構件 控制部27、填充有電解電鍍液L之電鑛糟 26 ° 本實施形態之電解電鍍装置2係藉由搬送輥25於 24上搬送片材狀之基材1並進行連續電鍍之装置。、電鍍槽 電鍍槽24中填充有電解電鍍液[、例如硫酸 電鍍液。 、寺之電解 陽極21並不浸潰於電鍍槽24中之電解電鍍液乙 是配置於較電鍍槽24中之電解電鍍液乙之液面更上而 此處，陽極21可為溶解性之陽極，亦可為不溶性之曰 複數個陽極21沿基材1之搬送方向（圖1〇〜圖以陽極。 向）隔開間隔而配置。於本實施形態中，1〇個陽極U =方 基材1之搬送方向隔開間隔而配置。 系 各陽極21係由複數片（本實施形態中為2片）金屬板 所構成。構成各陽極21之複數片金屬板211於與搬送方向 正交之方向（圖10〜圖12之y方向）隔開間隔而配置。 陽極21係由如圖13所示之支持構件26支持，沿基材1 之搬送方向相鄰之金屬板211彼此、及於與基材】之搬送方 向正交之方向（y方向）上相鄰之金屬板211彼此係隔開間隔 而配置。 圖13⑷係支持構件26之平面圖，圖13(B)係圖13(A)之 IV-IV方向之剖面圖。 支持構件26係由絕緣性之材料（例如硬質氯乙烯）所構 100102585 24 201139753 成且形成有用以嵌入陽極21之金屬板211之凹部261。 因此，藉由將陽極21嵌入至支持構件26，於陽極21間配 置絕緣材料，使陽極21間藉由絕緣材料絕緣。 又，於支持構件26之中央形成有沿基材i之搬送方向之 貝通槽262。該貫通槽262位於與基材丨之搬送方向正交之 方向上相鄰之金屬板211間，且經由該貫通槽262將電解電 鍍液L供給至基材1側。 如圖10及圖11所示’陽極21之寬度Wl(於本實施形態 中’為於與基材1之搬送方向正交之方向上排列之2片金屬 板211間之間隙及2片金屬板211之寬度之合計值）小於基 材1之寬度W2(與基材1之搬送方向正交之方向之長度）。 進而，於本實施形態中，支持構件26之寬度W3(與基材 搬送方向正交之方向之長度）小於基材1之寬度W2。 又，於自電鍍槽24上部側之俯視時’貫通槽262係位於 與基材搬送方向正交之方向上排列之金屬板211間之間 . 隙’即與基材1之搬送方向正交之方向之寬度W2之大致中 .央處。 此處’如圖11所示，於將基材1搬送至陽極21上’使基 材1與陽極21相對向之狀態下，位於金屬板211之正上方 之基材1之導電層12與金屬板211之間的距離Η較佳為〇.1 mm以上、10 mm以下。 猎由設為0.1 mm以上，而具有避免自基板1之貫通孔111 100102585 25 201139753 析出至外。p之銅電鍍膜與陽極2丨之物理接觸，防止因電流 聚集引起之電鑛燒焦之現象之效果，藉由設為1〇賴以下， 而具有可準確控制流動於各陽極2丨與陰極2 〇之間的電流量 之效果。即，於距離Η過大之情形時，各陽極21與陰極2〇 之間貫際流動之電流值有可能大幅度偏離所設定之電流 值’因此較佳為將距離Η設為1〇 mrn以下。 如圖10、圖12所示，陰極2〇形成為輥狀且配置於較陽 極21更上方。該陰極20係以接觸於基材1表面之導電層 12之方式配置，並作為用以搬送基材丨之搬送輥而發揮功 能。 例如，陰極20分別配置於基材丨之搬送方向基端側及前 端側。 搬送輥25係於陽極21上搬送基材1者。 如圖11所示’電解電鍍液供給部23係將電鍍槽24中之 電解電鍍液L朝向配置於電鍍槽24上部之基材1供給者。 電解電鑛液供給部23例如由泉P及連接於泵p之配管μ所 構成。 自電解電鍍液供給部23排出之電解電鍍液L係經由金屬 板211間之間隙（即貫通槽262)朝向基材1供給。 並且，如圖11所示，電解電鍍液L流動於基材1之絕緣 層11與金屬板211之間，且由於自身重量自金屬板211之 外侧之端部（與基材1之搬送方向正交之方向之端部）側朝向 100102585 26 201139753 下方落下。 再者，可構成為設置複數個電解電鍍液供給部23之配管 Μ，遍及整個貫通槽262之長度方向而供給電解電鍍液乙， 或者亦可如圖17所示，構成為於貫通槽262之下方配置形 成有沿貫通槽262之長度方向配置之複數個貫通孔281之板 材28，經由複數個貫通孔281及貫通槽262，遍及整個貫通 槽262之長度方向而供給電解電鍍液l。 再者，圖17係於圖13(Α)之VIII_vm方向之剖面圖中添 加板材28之剖面圖。又，目17之箭頭表示電解電鑛液l 之流動。 W不之控制部 一、甘吻视厶興陰 極20間之電流者。於本實施形態中，控制㈣係配置於各 陽極21與陰極2〇之間的電阻。 再者，於本實施形態中，陽極21係由隔開間隔而配置之 2片金屬板211所構成，但於各陽極21中流動於 片金屬板211與陰極2〇間之電流值與流動於另二 211與陰極20間之電流值相同。 板 貫通孔⑴為自其中一開口側（導電層12側之 另-開口側擴徑之錐形狀。因此，隨著於貫通)二 電鏟不斷進展，電鑛面積變大。因此，例^要 搬送方向前端側增大流動於各陽極21與陰極2Q間之電j 之方式糟由控制部27進行控制，則可使被電鑛面上之^ 100102585 27 201139753 密度大致均句。即’貫通孔lu依序與各陽極21相對向， 於貫通孔m分別與陽極21相對向之各狀態下，貫通孔⑴ 之被電鍍面上之電流密度大致相同。 具體而言，使基材搬送方向前端側之控制部27之電阻值 小於基材搬送方向基端側之控制部27之電阻值。 藉此可獲得所需之電鍍膜。 再者’流動於各陽極與陰極20間之電流值係以朝向基 材搬送方向前端側變大之方式設定，但並不限定於此，亦可 根據電鑛膜之成長階段，以成為所需之電流密度之方式控制 作為控制部27之電阻值。 其次，對使用如上所述之電解電鍍裝置2之電鍍方法進行 說明。 首先，對本實施形態之電鍍方法之概要進行說明。 本實施形態之電鍍方法係於複數個陽極21上搬送基材 1，於貫通孔111内形成電解電鍍膜之電鍍方法。 該電鍍方法包含如下步驟：於沿基材！之搬送方向配置之 複數個陽極21之上方搬送基材卜同時於絕緣層u之另一 面與複數個陽極21中與絕緣層u之另—面相對向之陽極 21間流動電解電舰，而於貫通孔⑴内形成電鍵膜；及 將絕緣層11之另-面與陽極21間之電解電鐘液排出至較絕 緣層11之另一面更下方。 並且’於形成電鍍膜之上述步驟中，控制流動於各陽極 100102585 28 201139753 21與陰極20之間的電流量。 繼而’對本實施形態之電鍍方法進行詳細說明。 首先，準備基材1。 基材1係捲繞成輥狀，經由搬送輥乃及陰極2〇而將基材 1供給至電錢槽24上。此時，係以導電層12直接接觸於陰 極20之方式供給基材1。 再者’於電解電叙前段進行脫脂。 於將基材1供給至電錢槽24上之前段，預先藉由控制部 27調正々丨L動於各&極2丨與陰極2〇間之電流值。例如，預 先以自基材搬送方向基端側朝向前端側使流動於陰極2〇與 陽極21間之電流值變大之方式藉由控制部27調整電流值。 藉由搬廷輥25及陰極2〇於電鍍槽24上搬送基材丨，说 時’將電鑛槽24中之電解電鍍液L自陽極21侧朝向基材 供給至上方。電解電鍍液L係經由形成於與陽極Μ之基柄 )°冑之方向上排列之金屬板211間之間隙(本實掩 形態中為貫通槽262)而供給至基材！之絕緣層u之另 ^金屬板211之間。該電解電鑛液L亦供給至絕緣層U之 貝通1内藉此’金屬板211與絕緣層11間之間隙及 貫通孔111内由電解•液L填充，電解電鑛液L與金屬 板2U及自貫通孔⑴露出之導電層12接觸，於貫通孔川 内部析出電錄。 再者，基材1通過電鍍槽 24上部之期間，係自貫通槽262 100102585 29 201139753 連續地供給電解電鍍液。因此，基材1通過電鍍槽24之上 部之期間’維持金屬板211與絕緣層11間之間隙及貫通孔 111内充滿電解電鑛液L之狀態。 如圖11所示’供給至基材1之絕緣層U之另一面與金屬 板211間之電解電鍍液l由於自身重量自金屬板211之外側 之端部（與貫通槽262側相反侧之端部）側向較絕緣層11之 另一面更下方落下。 此處，如上所述’陽極21之寬度W1小於基材1之寬度 W2，於自電鍍槽24上方之俯視時，基材！之端部亦自陽極 21之端部向基材搬送方向正交之方向（外側）突出。進而，於 本實施形態中，支持陽極21之支持構件26之寬度W3亦小 於基材1之寬度W2，基材1之端部亦自支持構件26向外 側突出。 因此，供給至基材1之絕緣層11之另一面與金屬板2U 間之電解電鍍液L並不與絕緣層11上之導電層12之端部 或侧面接觸’而是於電鍍槽24側落下，並藉由電鍍槽24 回收。藉此’可抑制於導電層12析出電鍍。 再者，由電鍍槽24所回收之電解電鍍液l再次藉由電解 電鍍液供給部23自貫通槽262朝向基材1側流動。 於電鍍槽24中，雖未圖示，但亦可藉由調整手段定期分 析電解電鍍液，並調整電解電鍍液L中之各成分之濃度。 如上所述藉由控制部27調整流動於各陽極21與陰極 100102585 30 201139753 20間之電流值。例如，以於配置於離基材搬送方向基端側 最近位置之陽極21與陰極20之間流動0.1 i之電流之方式 藉由控制部27控制。以於配置於離基材搬送方向基端側第 二近之位置之陽極21與陰極20之間流動0.2 i之電流之方 式藉由控制部27控制。並且，以朝向基材搬送方向前端侧 每增加0.1 i則電流值變多之方式藉由控制部27控制。 於本實施形態中，基材1係不停止地通過陽極21上。基 材1通過陽極21上之期間於貫通孔111内實施電鍍。但是， 基材1亦可一面於陽極21上暫時停止一面通過複數個陽極 21上。 將貫通孔111内部已實施電鍵之基材1水洗，從而完成貫 通孔111内部已實施電鍍之基材1。 其後，視需要切割基材1，於基材1之絕緣層11之另一 面側黏附金屬膜。其後，選擇性去除導電層12及上述金屬 膜而形成電路層，從而獲得電路基板。該電路基板係可撓性 電路基板(可撓性印刷佈線板）。 繼而，對本實施形態之作用效果進行說明。 於本實施形態中，使絕緣層11之另一面與陽極21間之電 解電鍍液L流動至較絕緣層11之另一面更下側，故可抑制 設置於絕緣層11之其中一面上之導電層12之側面附著電解 電鍍液L，而於導電層12之側面析出電鍍。藉此，可於貫 通孔111内部穩定地實施電鍍。 100102585 201139753 特別是於本實施形態中，當使基材1與陽極21相對向時， 陽極21之寬度W1小於基材丨之寬度W2，於自電鍍槽μ 上方之俯視時，基材1之端部較陽極21之端部更向基材撖 送方向正交之方向（外侧）突出。進而，於本實施形態中， 持陽極21之支持構件26之寬度W3亦小於基材1之寬户 W2，基材1之端部亦自支持構件26向外側突出。 因此’陽極21與絕緣層u間之電解電鍍液l與絕緣層 11之端部並不接觸而排出至電鍍槽Μ側，故可確實地抑制 於導電層12之侧面析出電鍍之情形。 又，於如上所述之先前之製造方法申，有於導電層析出電 鑛之課《I。為解決该課題，例如考慮有於基材為非連續狀形 狀之情形時，藉由於導電層側貼附樹脂等絕緣體板，其後使 用絕緣體之膠帶等密封電路基板之外周而使導電層表面及 側面與電鍍液隔離並進行電鍍之方法；或於基材為連續狀形 狀之情形時，使用連續狀絕緣膠帶將導電層及其側面全部包 覆之方法。 然而，該等方法均存在於電鍍前膠帶之黏附，進而電鍍後 之剝離作業中钯費大量時間而無法提高生產性之問題。 相對於此，於本實施形態中，於基材丨之絕緣層η之另 一面（與設置有導電層之面為相反侧之面）與陽極21之間流 動電解電鍍液L，於貫通孔U1内形成電鍍膜。並且，將電 解電鍵液L排出至較絕緣層11之另一面更下方。 100102585 32 201139753 藉此，於設置於絕緣層11之其中一面之導電層 不接觸 電解電鍍液L，因此亦可不藉由光罩等包覆導電層12 此’可節省於絕緣層11之貫通孔Π1内之電鍍處理所花費 之時間，從而可高效率地進行電鍍。 ' 又’於本實施形態中’藉由控制部27調整流動於各陽極 21與陰極20間之電流值。於本實施形態中，以朝向基材搬 送方向前端側增大流動於各陽極21與陰極2 〇間之電流量之 方式藉由控制部27控制。 此處，基材1之貫通孔ill為自其中—開口側（導電層12 側之開口）朝向另一開口侧擴徑之錐形狀。因此，隨著於貫 通孔1Π内部之電鍍不斷進展，電鍍面積變大。因此，只要 以朝向基材搬送方向前端側增大各陽極2丨與陰極2 〇間之電 "il I之方式藉由控制部27控制，則可使被電鍍面上之電流 密度大致均勻。藉此，可獲得所需之電鍍膜。 進而，於本實施形態中，使電解電鍍液^自構成陽極21 之金屬板211間之間隙（本實施形態中為貫通槽262)朝向基 材1側流動至上方。藉此，可使電解電鍍液穩定地流動於基 材1之絕緣層11與陽極21之間。 例如’亦考慮有如圖15所示，使電解電鍍液L自基材搬 送方向基端側向基材1.與陽極21間之間隙流動（圖15之箭 頭表示電解電鍍液L之流動）。然而，於增大電鍍槽24上之 搬送距離之情形時，必需使電解電鍍液L自基材1之搬送 100102585 33 201139753 方向基端側朝向搬送方向前端側非常順勢地流動，而難以將 電解電鍍液L穩定地供給至基材〗與陽極21之間。 相對於此，於本貫施形態中，於與基材搬送方向正交之方 向上之相鄰之一對金屬板2Π間形成間隙，由該間隙將電解 電鍵液供給至基材1與陽極21之間，因此即便電解電鍵液 L並非非常順勢地流動，亦可使電解電鍍液L穩定地流動於 基材1之絕緣層11與陽極21之間。 進而，於本實施形態中，於與陽極21之基材搬送方向正 交之方向上相鄰之金屬板211間之間隙的位置(本實施形態 中為貫通槽262)係存在於基材〗之寬度W2方向之大致中心 位置，故可使電解電鍍液L自貫通槽262大致均勻地流動 至基材1之端部側（沿基材搬送方向之端部侧），從而可穩定 地實施電鑛。 又，於本實施形態中，將陽極21嵌入至絕緣性之支持構 件26内。藉此，基材搬送方向上鄰接之陽極21彼此絕緣， 故可使流動於各陽極21與陰極20間之電流值成為所需之電 流值。 再者，本發明並不限定於上述之實施形態，於可達成本發 明之目的之範圍内之變形、改良等包含於本發明中。 例如，於上述實施形態争，由複數片金屬板211構成各陽 極21，但並不限定於此。例如，如圖16所示，亦可由一片 金屬板212構成陽極210。藉此，可簡化電鍍裝置之構成。 100102585 34 201139753 於此情形時’金屬板212上形成貫通孔212A，將電解電鍍 液L自貫通孔212 A供給至基材1側即可。 又，於上述實施形態中，貫通孔1U為剖面錐形狀，但並 不限定於此，亦可為自貫通孔1U之其中一個開口朝向另一 個開口直徑為均勻之形狀，例如為圓柱狀。 繼而，於上述實施形態中，係以流動於各陽極21與陰極 20間之電流值朝向基材搬送方向前端側變大之方式設定’ 但並不限定於此。 例如於、絕緣層之厚度非常厚，與貫通孔之開口徑相比， 貝通孔之冰度尺寸非常大之情形時，於電齡期，電鑛液中 之金屬離子難明達至貫通孔内部1此，於電流密度較高 之情形時，存在由於氫氣等氣體而於電鍍膜上形成空隙之情 形。因此，於電鍍初期降低電流密度。 ;電錢膜t成至貫通孔之開σ附近之電鍍後期，向被電鍛 屬軒之供給變得糊，因此提高電絲度以提高電 鍍速度。 = 膜之成長階段’而控制流動於各陽極 υ間之電流值。 又，於上述實施形態中，構成為將 電鍵槽24上連續供給基材 捲、，狀，於 1 仁並不限疋於此，例如，亦 了構烕為基材非輥狀 亦 搬送該—片基材。 π片板狀’於電鍍槽24上 100102585 35 201139753 以下，根據圖式對本發明之第三實施形態進行說明。 首先，參照圖18〜圖20對本實施形態之電解電鍍裝置之 概要進行說明。 圖18係電解電鍍裝置2之平面圖，圖19係圖18之II-II 方向之剖面圖，圖20係圖18之III-III方向之剖面圖。 本實施形態之電解電鍍裝置2係用以一面將具有形成有 貫通孔111之絕緣層11及設置於該絕緣層11之其中一面且 堵塞貫通孔111之其中一個開口之導電層12之基材1於陽 極21上搬送，一面於貫通孔111内進行電解電鍍之電解電 鍍裝置。 電解電鍍裝置2具備：陽極21 ;陰極（省略圖示），其係連 接於導電層12 ;搬送部20，其係一面使基材1之絕緣層11 之另一面與陽極21相對向而夾持電解電鍍液L，使電解電 鍍液L與自貫通孔111露出之導電層12表面之一部分接 觸，一面於陽極21上及電解電鍍液L上搬送基材1。搬送 部20係以至少基材1之導電層12之周緣部之一部分向上方 側翹曲之方式一面保持上述基材一面搬送基材1。 其次，對成為電解電鍍裝置2之電鍍對象之基材1進行說 明。 如圖22所示，該基材1具備形成有貫通孔111之絕緣層 11及導電層12。 基材1例如成為可撓性電路基板者。 100102585 36 201139753 絕緣層11例如為聚醯亞胺膜，厚度為10 //m〜200 //m 左右。 絕緣層11上形成有貫通表面與背面之複數個貫通孔 111。該通孔111係以自絕緣層11之表面（其中一面）側朝向 背面（另一面）側直徑變大之方式形成，且為剖面錐形形狀。 絕緣層11之其中一面側設置有堵塞複數個貫通孔111之 開口之導電層12。導電層12為金屬膜，例如銅膜。 導電層12之厚度例如為5〜50 #m。 於本實施形態中，基材1為平面矩形形狀，當俯視時，為 基材1之整個周緣部收容於電鍍槽24之内侧之大小，且為 於陽極21上可搬送之大小。 其次，對電解電鍍裝置2進行詳細說明。 該電解電鍍裝置2係對基材1逐一進行電解電鍍之單片式 之裝置。 如圖18〜圖21所示，本實施形態之電解電鍍裝置2具備 未圖示之陰極、陽極21、電解電鍍液供給部23、填充有電 解電鍍液L之電鍍槽24、搬送部20及支持構件26。 電鍍槽24中填充有電解電鍍液L、例如硫酸銅等之電解 電鍍液。 陽極21並不浸潰於電鍍槽24中之電解電鍍液L中，而 是配置於較電鍍槽24中之電解電鍍液L之液面更上方。 此處，陽極21可為溶解性之陽極，亦可為不溶性之陽極。 100102585 37 201139753 陽極21係由複數片金屬板（陽極部）211所構成，且配置於 基材1之搬送方向（圖18〜圖2〇之χ方向）及與搬送方向正 交之方向（圖18〜圖20之7方向）。例如，將基材i之搬送 方向設為「列」、將與搬送方向正交之方向設為「行」之情 形時，金屬板211係以1 〇列X2行之形式配置。 各金屬板211係由如圖21所示之支持構件26支持，且沿 基材1之搬送方向（X方向）相鄰之金屬板211彼此、及於與 基材1之搬送方向正交之方向方向）上相鄰之金屬板211 彼此係隔開間隔而配置。 圖21(A)係支持構件26之平面圖，圖21(B)係圖21(a)之 IV-IV方向之剖面圖。 支持構件26係由例如絕緣性之材料所構成，且形成有用 以嵌入金屬板211之凹部261。於該支持構件26之中央形 成有沿基材1之搬送方向延伸之貫通槽262。該貫通槽262 位於與基材i之搬送方向正交之方向上相鄰之金屬板叫 間，且經由該貫通槽262將電解電錢液L供給至基材ι側。 如圖18及圖19所示，陽極21之寬度W1(於本實施形態 中，為於與基材！之搬送方向正交之方向上排列之2片金屬 板211間之間隙及2片金屬板211之寬度之合計值)小於基 材1之寬度W2(與基材i之搬送方向正交之方向之長度）。 進而於本實施形態中，支持構件％之寬度料與基材 搬送方向正交之方向之長度)小於基材1之寬度W2。 100102585 38 201139753 又’於自電鍍槽24上部侧之俯視時，於與基材搬送方向 正交之方向上排列之金屬板211間之間隙’即貫通槽262 位於离基材1之搬送方向正交之方向之寬度W2之大致中央 處。 .、 • 此處如® 19所示，於將基材1搬送至陽極21上而使基 才^陽極21相對向之狀態下，位於金屬板211之正上方 土材1之導電層12與金屬板211之間的距離Η較佳為〇1 mm以上。 藉由使距離Η為Q.l mm以上，而具有避免基材！與陽極 21之物_觸’防止因電流聚集引起之電鍍燒焦之 效果。 再者，距離Η之上限值並無特別限定，但較佳為例如ι〇〇〇 mm以下。 搬达部20係於使基材1之絕緣層11之另-面與陽極21 相對向之狀態下’將基材1於陽極上搬送者。 ‘如圖20所不’搬送部20具備吸附保持基材1之保持部 .201、連接於保持部201之連接部2〇2、及連接於連接部2〇2 之輕加。保持部2G卜連接部搬、親2〇3均係由導電材 料、例如金屬所構成。 如圖20所不，保持部2〇1為剖面梯形形狀，且真空吸附 於基材1之導電層u上。保持部2〇1具備與陽極^相對向 之平面矩形形狀之相反面謝Α、自相反面舰之搬送方 100102585 39 201139753 向前端部朝向上方延伸之延伸面201B、及自相反面 之搬送方向後端部朝向上方延伸之延伸面2〇lc。 基材1之導電層12係沿搬送部20之相反面2〇1八及一對 延伸面201B、201C吸附保持。即，搬送部2〇係以基材1 之搬送方向前端側部分及搬送方向後端側部分向上方（與陽 極21相反側）翹曲之方式保持基材工。 連接部202係將輥203與保持部201連接者。 如圖20所示，輥203係於連接於陰極之軌道29上滾動， 藉由使輥203於轨道29上滾動，而可將基材丨於陽極2ι 上搬送。又，經由轨道29、輥203、連接部202、保持部2〇1， 基材1之導電層12與未圖示之陰極電性連接。 如圖19所示，電解電鍍液供給部23係將電鍍槽24中之 電解電鍍液L朝向配置於電鍍槽24上部之基材i供給。電 解電鑛液供給部23係由例如果P及連接於果p之配管M所 構成。 自電解電鍍液供給部23排出之電解電鍍液L經由金屬板 211間之間隙（即貫通槽262)朝向基材1供給。 並且’如圖19所示，電解電鍍液L流動於基材1之絕緣 層11與各金屬板211之間，並且由於自身重量自各金屬板 211之外側之端部（與基材1之搬送方向正交之方向之端部） 側朝向下方落下。 再者’可構成為設置複數個電解電鍍液供給部23之配管 100102585 40 201139753 Μ，遍及整個貝通槽262之長度方向而供給電解電鍍液[， 或者亦可如圖24所示，構成為於貫通槽262之下方配置形 成有沿貫通槽262之長度方向配置之複數個貫通孔281之板 材28，經由複數個貫通孔281及貫通槽262遍及整個貫通 槽262之長度方向而供給電解電鍍液l。 再者’圖24係於支持構件26之剖面圖中添加板材“之 剖面圖。又，圖24之箭頭表示電解電鍍液乙之流動。 圖20所示之控制部27係用以控制流動於各金屬板（陽極 部）211與陰極（圖示略）間之電流者。於本實施形態中，控制 部27係配置於金屬板211與陰極（圖示略）間之電阻。 再者’於本實施形態中’於與基材1搬送方向正交之方向 上排列之2片金屬板211中，其中一片金屬板2n與陰極（圖 示略)之間所流動之電流值與另一片金屬板211與陰極（圖示 略）之間所流動之電流值相同。 於本實施形態中，貫通孔111為自其中一開口側（導電層 12側之開口）朝向另一開口側擴徑之錐形狀。因此，隨著於 貫通孔111内部之電鍍不斷進展，電鍍面積變大。因此，例 如只要以朝向基材搬送方向前端侧增大流動於各金屬板 211與陰極間之電流量之方式藉由控制部27控制，則可使 被電鍍面上之電流密度大致均勻。即，貫通孔ln依序與各 金屬板211相對向，於貫通孔hi與各金屬板211相對向之 各狀態下，貫通孔111之被電鍍面上之電流密度變得大致相 100102585 41 201139753 同0 具體而言，使基材搬送方向前，之控制部27之電阻值 小於基材搬送方向基端侧之控制部 藉此可獲得所需之電鍍膜。 之阻值 再者，流動於各陽極部211鱼@ 材搬送方向前端側變大之方式^?間之電流值係以朝向基 對應於電鍍膜之成長階段，以成仁並不限疋於此’亦可 制作為控制部27之電阻值。·所需之電流密度之方式控 其次，對使用如上所述之電解 說明。 €鍍裝置2之電鍍方法進行 首先，對本實施形態之電錢方法之概要進行說明。 本實施形態之電鍍方法包含如下步驟：準備基材ι，及於 陽極21及電解電舰L上搬送基材1，並錢絕緣層U之 另一面與陽極21相對向，使電解電舰L與自貫通孔U1 露出之導電層12之—部分接觸，同時於上述貫通孔m内 形成電鑛膜。 於搬送基材i之上述步驟中，以至少基材1之導電層12 之周緣部之-部分向陽極21相反側㈣之方式—面保持上 述基材卜-面於陽極21及電解電舰L上搬送基材1。 其次，對本實㈣態之電“法進行詳細說明。 首先，準備基材1。再者’於電解電鐘之前段進行基材i 之脫脂。 100102585 42 201139753 於將基材i供給至電㈣24上之前段，縣藉由控制部 27調整流動於各陽極# 211與陰極間之電流值。例如，預 先以自基材搬送方向基端側朝向前端側使流動於陰極與陽 極部211間之電流值變大之方式由控制部27調整電流值。 其次’使基材1保持於搬送部20。 具體而言，使基材1之導電層12吸附於保持部2〇1 ’使 基材1之搬送方向前端部及搬送方向後端部向上讀曲。 其後’藉由搬送部20於電鑛槽24上搬送基材。此時，將 電鑛槽24 t之電解電鍵液L自陽極21側朝向基材】供給 至上方。電解電鑛液L係經由形成於與陽極21之基材搬送 方向正交之方向上排列之金屬板211間之間隙（本實施形離 中為貫通槽262)供給至基材丄之絕緣層u之另一面與金屬 板211之間。 · 該電解電錢液L亦供給至絕緣層u之貫通孔⑴内。藉 此，金屬板2η與絕緣層u間之間隙及貫通孔⑴内由電 解電鑛液L填充，電解電鍍液L與金屬板211、自貫通孔 ill露出之導電層12接觸，而於貫通孔U1内部析出電鍛。 再者，基材i通過電趟槽24上部之期間，自貫通槽262 連續地供給物電舰L。因此，錄i於鶴顿液L上 移動。又，基材i通過電鍛槽24之上部之期間，維持金屬 板211與絕緣層11間之間隙及貫通孔111 Μ充滿電解電鑛 液L之狀態。 100102585 43 201139753 如圖19所斧’供給至基材1之絕緣層η之另一面與金屬 板211間之電解電鐘液1由於自身重量自金屬板211之外側 之端部（與貫通槽262側相反側之端部）侧向較絕緣層11之 另一面更下方瘙下。 此處，如上所述’陽極21之寬度W1小於基材1之寬度 W2，於自電鍍槽24上方之俯視時’基材1之端部較陽極 21之端部更向基材搬送方向正交之方向（外侧）突出。進而’ 於本實施形態中’支持陽極21之支持構件26之寬度W3亦 小於基材1之寬度W2 ’基材1之端部亦自支持構件26向 外側突出。 因此，供給至基材1之絕緣層11之另一面與金屬板211 間之電解電鍍液L並不與絕緣層11上之導電層之端部 或側面接觸’而是於電錢槽24侧落下，並藉由電鍍槽24 回收。藉此’可抑制於導電層12析出電鍍之情形。 再者，藉由電鍍槽24所回收之電解電鍍液L再次藉由電 解電鍍液供給部23自貫通槽262朝向基材1侧流動。 於電鑛槽24中，雖未圖示，但亦可藉由調整手段定期分 析電解電鍍液L，並調整電解電鐘液L中之各成分之濃产。 如上所述，藉由控制部27調整流動於各陽極部2ιι與陰 極間之電流值。例如，以於配置於離基材搬送方向基端側最 近位置之陽極部211與陰極之間流動〇.〗丨之電流之方式由 控制部27控制。以於配置於離基材搬送方向基端側第二近 100102585 44 201139753 之位置之陽極部211與陰極之間流動0.2 i之電流之方式藉 由控制部27控制。並且，以朝向基材搬送方向前端側每增 加0.1 i則電流值變多之方式由控制部27控制。 於本實施形態中’基材1係不停止地通過陽極21上。基 材1通過陽極21上之期間於貫通孔U1内實施電鍍。然而， 亦可將基材1 一面於陽極21上暫時停止一面通過複數個陽 極部211上。 將貫通孔111内部已實施電鍍之基材丨水洗而完成基材1q 其後，視需要切割基材1，於基材丨之絕緣層η之另一 面側黏附金屬膜。其後，選擇性去除導電層12及上述金屬 膜而形成電路層，從而獲得電路基板。該電路基板為可撓性 電路基板。 其次，對本實施形態之作用效果進行說明。 於本實施形態中’當對基材1進行電鑛時，以基材i之搬 送方向前端側部分及搬送方向料㈣分向上方(與陽極21 及電解钱液相反彳齡曲之方切基材丨㈣於搬送部 20 ’並於電解電鍍液l上移動。 因此，可抑制於基材1之導電層12之搬送方向前端側部 分及搬送方向後端側部分，即與基材搬送方向相對向之一對 側面接觸電解電鍵液L。 除此以外，於本實施m中，當進行電鍍時，使絕緣層 11之另一面與陽極21間之電解電錢自與基材丄之搬送 100102585 45 201139753 方向正交之側向較絕緣層u之另一面更下側流動，故可抑 制…導電層12之基材椒送方向之側面附著電解電鐘液L， 而於導電層12之基持搬送方向之側面析出電鍵的情形。 即’於本貫施形態令，由於可防止於導電層12之整個側 面析出電鍍之情形，故可於貫通孔lu内部穩定地實施電 鍍。 特別是於本實施形態中，當使基材丨與陽極21相對向時， 陽極21之寬度W1小於基材i之寬度W2，於自電鍍槽24 上方之俯視時’基材1之端部較陽極21之端部更向基材搬 送方向正交之方向（外側）突出。進而，於本實施形態中，支 持陽極21之支持構件26之寬度W3亦小於基材1之寬度 W2，基材1之端部亦自支持構件％向外側突出。 因此，陽極21與絕緣層11間之電解電鍍液Ε並不與絕 緣層11之端部接觸而是排出至電鑛槽24侧，故可確實地抑 制於導電層12之側面析出電鍍之情形。 於先前之製造方法中，當於絕緣層之孔内藉由電鍍法形成 通道時，若第一金屬膜之侧面露出，則於第一金屬膜之側面 析出電鍍。於此情形時，由於第一金屬膜側面之面積與本來 應析出電鍍之孔面積相比非常大，因此優先進行電鍍之析 出，難以於孔内部進行電鑛。特別係於如孔之直徑非常小之 情形時，此種現象較為顯著。 相對於此，於本實施形態中，如上所述，由於可確實地抑 100102585 46 201139753 制於導電層12之側面析出電鍍，因此於貫通孔111内部可 確實地實施電鍍。 又’於如上所述之先前之製造方法中，有於第一金屬骐側 面析出電鍍之課題。為解決該課題，例如考慮有於基材為非 連續狀形狀之情形時’藉由於第一金屬膜側貼附樹脂等絕緣 體板’其後使用絕緣體之膠帶等密封電路基板之外周而使第 一金屬膜側面與電鍍液隔離並進行電鍍之方法。 然而’該方法有於電鍍前膠帶之黏附，進而電鍍後之剝離 作業中花費大量時間而無法提高生產性之問題。 相對於此，於本實施形態中，於基材1之絕緣層11之另 一面（與設置有導電層之面為相反側之面）與陽極21之間流 動電解電錢液L ’於貫通孔lu内形成電鍍膜。並且，將電 解電鍍液L排出至較絕緣層丨丨之另—面更下方。進而，當 對基材1進行電錢時，以基材1之搬送方向前端側部分及二 送方向後端側部分向上方(與陽極21相反側他曲之方式將 基材1保持於搬送部2〇。 藉此’於設置於絕緣層U之其中—面之導電層12之側面 或與導電層12之絕緣層u相反側之面不接觸電解電錢液 L 口此亦可不藉由光罩等包覆導電層η。因此，可節省於 絕緣層11之貫通孔1U !^之電锻處理所花費之時間，從而 可高效率地進行電鍍。 又，於本實施形態中’藉由控制部27調整流動於各陽極 100102585 47 201139753 部211與陰極間之電流值。於本實施形態中，以朝向基材搬 送方向則鸲側增大流動於各陽極部211與陰極間之電流量 之方式藉由控制部27控制。 此處基材1之貝通孔U1為自其中一開口側（導電層^ 側之開口）朝向另一開口侧擴徑之錐形狀。因此，隨著於貫 通孔111内部之電鍍不斷進展，電鍵面積變大。因此，只要 以朝向基材搬送方向前端側增大流動於各陽極部叫與陰 極間之電流量之方式藉由控制部27控制，則可使被電鍵面 上之電流密度大致均勻。藉此可獲得所需之電鑛膜。 進而，於本實削彡態巾，使賴電職l自減陽極η 之金屬板2U間之間隙(本實施形態中為貫通槽⑽朝向基 材1側流動至上方。藉此，可使電解電鍍液l於基材ι之 絕緣層11與陽極21之間穩定地流動。 進而，於本實施形態中，於與陽極21之基材搬送方向正 乂之方向上相鄰之金屬板211間之間隙之位置（本實施形態 中為貫通槽262)係存在於基材1之寬度W2方向之大致中心 位置’故可使電解電錢液L自貫通槽262向基材i之端部 側（沿基材搬送方向之端部侧)大致均勻地流動，從而可穩定 地實施電鍍。 又，於本實施形態中，將陽把 將陽極。卩211嵌入至絕緣性之支持 構件26内。藉此，基材搬送方向上鄰接之陽極部川彼此 絕緣，故可使流動於各陽極部211與陰極間之電流值成為所 100102585 48 201139753 需之電流值。 再者，本發明並不限定於上述之實施形態，於可達成本發 明之目的之範圍内之變形、改良等包含於本發明中。 例如，於上述實施形態中，係由複數片金屬板211構成陽 極21，但並不限定於此。例如，如圖23所示，亦可由一片 金屬板212構成陽極210。藉此，可簡化電鍍裝置之構成。 於此情形時，金屬板212上形成貫通孔212A，將電解電鍍 液L自貫通孔212 A供給至基材1側即可。 又，於上述實施形態中，貫通孔lu為剖面錐形狀，但並 不限定於此，亦可為自貫通孔111之其中一個開口朝向另一 個開口直徑為均勻之形狀，例如為圓柱狀。 進而’於上述實施形態中，流動於各陽極部211與陰極間 之電流值係以朝向基材搬送方向前端側變大之方式設定，但 並不限定於此。 例如’於絕緣層之厚度非常厚’與貫通孔之開口徑相比， 貫通孔之深度尺寸非常大之情形時，於電鍍初期，電鍍液中 之金屬離子難以到達貫通孔内部。因此，於電流密度較高之 情形時’存在由於氫氣等氣體而於電鍍膜上形成空隙之情 形。因此’於電鍍初期降低電流密度。 於電鍍膜形成至貫通孔之開口附近之電鍍後期，向被電鍍 面之金屬離子之供給變得順利，因此提高電流密度以提高電 鍍速度。 100102585 49 201139753 士此亦可對應於電鍍膜之成長階段而控制流動於各陽極 部211、陰極間之電流值。 又，於上述實施形態中，使電解電鍍液L·自電鍍槽24朝 向基材1噴出，但並不限定於此，例如，亦可於電鍍槽Μ 中之電解電缺L表面上搬送基材卜於此情形時較佳為 使基材1之整個周緣部朝向電解電鍍液L相反侧、即上方 側赵曲。 進而，於上述實施形態中，控制流動於各陽極部211、陰 極間之電流值，但亦可不控制。 又，於上述實施形態中，於貫通孔11内部實施電鍍，但 並不限定於此。例如，亦可於絕緣層不形成貫通孔，使導電 層表面與陽極21相對向’並且使導電層表面（與絕緣層相反 侧之面）與電鍍液L接觸而實施導電層表面電鍍。 本申請案係基於且主張2010年01月26曰提出申請之曰 本專利特願2010-014142號及2010年〇1月26日提出申含奮 之曰本專利特願2010-014144號及2010年06月1()日提出 申請之曰本專利特願2010-133230號之優先權，其全體揭示 内容併入本文。 【圖式簡單說明】 上述目的及其他目的、特徵及優點將藉由以上所述之較佳 實施形態及隨附之以下圖式而進一步明確。 圖1係表示本發明之第一實施形態中之電解電鍍裝置之 100102585 50 201139753 平面圖。 圖2係圖1之π-ll方向之刮面圖。 圖3係圖1之m-πι方向之剖面圖。 圖4係表示電解電鍍裝置之支持構件之圖。 圖5係表示基材之剖面圖。 圖6係表示本發明之變形例中之電解電鍍裝置之平面圖。 圖7係表示本發明之變形例中之陽極之平面圖。 圖8係表示本發明之變形例中之電解電鍍裝置之圖。 圖9係表示本發明之變形例中之電解電鍍裝置之主要部 分的圖。 圖10係表示本發明之第二實施形態中之電解電錢裝置之 平面圖。 圖11係圖10之Π-ΙΙ方向之剖面圖。 圖12係圖10之ΙΠ-ΙΙΙ方向之剖面圖。 圖13係表示電解電鍍裝置之支持構件之圖。 圖14係表示基材之剖面圖。 圖15係表示本發明之變形例中之電解電鑛裝置之平面 圖。 圖16係表示本發明之_例中之陽極之平面圖。 圖17係表示本發明之變形例中之電解電錢裝置之 分的圖。 圖18係表示本發明之第三實施形態中之電解電鑛裝置之 100102585 51 201139753 平面圖。 圖19係圖18之II-ΙΙ方向之剖面圖。 圖20係圖18之III-III方向之剖面圖。 圖21係表示電解電鍍裝置之支持構件之圖。 圖22係表示基材之剖面圖。 圖23係表示本發明之變形例中之陽極之平面圖。 圖24係表示本發明之變形例中之電解電鍍裝置之主要部 分的圖。 【主要元件符號說明】 1 基材 2 電解電鍍裝置 11 絕緣層 12 導電層 20、210 陰極 21 陽極 23 電解電鍍液供給部 24 電鍍槽 25 搬送輥 26 支持構件 27 控制部 28 板材 29 執道 100102585 52 201139753 111、212A、281 貫通孔 201 保持部 201A 保持部之相反面 201B 、 201C 保持部之延伸面 202 連接部 203 輥 211 > 212 金屬板(陽極部） 261 金屬板之凹部 262 貫通槽 Η 導電層與金屬板之間的距離 L 電解電鍍液 Μ 配管 P 泵 W1 陽極之寬度 W2 基材之寬度 W3 支持構件之寬度 X 基材之搬送方向 y 與基材之搬送方向正交之方向 100102585 53On the other hand, in the present embodiment, a gap is formed between the metal plates 211 adjacent to each other in the direction orthogonal to the substrate conveyance direction, and the electrolytic plating solution is supplied from the gap to the substrate 1 and the anode 21 Therefore, even if the electrolytic plating solution L does not flow very well, the electrolytic electric ore L can be stably flowed between the insulating layer 11 and the anode 21 of the substrate. Further, in the present embodiment, the position of the gap between the metal plates 211 adjacent to each other in the direction orthogonal to the substrate transport direction of the anode 21 (the through groove 262 in the present embodiment) is present in the substrate i. The width-direction is substantially at the center. Therefore, the electrolytic pouring liquid L can be substantially uniformly axially bent from the through groove 262 toward the end side of the substrate ( (the end (four) in the substrate conveying direction), so that plating can be stably performed. Further, the present invention is not limited to the above-described embodiments, and modifications, improvements, etc. within the scope of the purpose of the invention are also included in the present invention. 100102585 20 201139753 For example, in the above embodiment, the plurality of metal plates 211 constitute the anode 21, but the invention is not limited thereto. For example, as shown in Fig. 7, the anode 210 may be constituted by a sheet metal plate 212. Thereby, the constitution of the plating apparatus can be simplified. In this case, the through hole 212 is formed in the metal plate 212, and the electrolytic plating solution L may be supplied from the through hole 212A to the substrate 1 side. However, as in the above embodiment, when the plurality of metal plates 211 constitute the anode 21, the current flowing between the metal plates 211 and the cathodes 2 can be controlled to different values. Since the through hole 111 has a tapered cross-sectional shape, the plating area increases as the electroplating progresses. Therefore, for example, the current value flowing between the metal plate 211 and the cathode 2〇 on the base end side in the transport direction of the substrate 小于 is smaller than that between the metal plate 211 and the cathode which are located on the front end side of the substrate 1 in the transport direction. The current value 'can be used to fix the current density on the clock face. Specifically, as shown in Fig. 8, the control unit 27 (here, the resistor) can make the amount of current flowing between the metal plates 211 and the cathode 2 成为 different. Further, in the above-described embodiment, the through hole 111 is formed in a cross-sectional tapered shape. However, the through hole 111 is not limited thereto, and may be formed such that one of the openings of the through hole 111 has a uniform diameter toward the other opening, for example, It is cylindrical. Further, in the above embodiment, the electrolytic key device 2 is continuously electroplated while the substrate 1 is being conveyed on the anode 21. However, the present invention is not limited thereto, and the substrate 1 may be stopped on the anode crucible (4). Perform electric seams. Further, in the above-described embodiment, the electroplating apparatus 2 is provided with a substrate for transporting a continuous substrate of 100102585 21 201139753, and the value is not limited thereto, and may be used as a non-continuous substrate-specific device without transporting. Roller. For example, it may be a single-plate type electrolytic plating apparatus. Further, the substrate 1 is used as a flexible circuit board. However, the substrate 1 is not limited thereto, and may be a rigid substrate. Hereinafter, a second embodiment of the present invention will be described based on the drawings. The outline of the plating apparatus 2 of the present embodiment will be described with reference to Figs. 10 to 12 . Fig. 10 is a plan view of the plating apparatus 2, Fig. 9 is a cross-sectional view taken along the line π π of Fig. 1, and Fig. 12 is a cross-sectional view taken along the line nI-m of Fig. 1. The plating apparatus 2 of the present embodiment is configured to convey an insulating layer 11 having a through hole 111 having a diameter changed from one opening side to the other opening side, and one surface of the insulating layer u. The substrate i that blocks the conductive layer 12 of one of the through holes 111 is subjected to electrolytic plating in the through hole 111. The electrolytic plating apparatus 2 includes a cathode 20 that is connected to the conductive layer 12, a plurality of anodes 21 that are disposed along the direction in which the substrate 1 is transported, and are disposed with a space therebetween. The transfer means 25 has one surface above the anode 21. The substrate 1 is conveyed while the other surface of the insulating layer 11 of the substrate 1 is opposed to the anode 21, and the electrolytic plating solution supply unit 23 is configured to flow the electrolytic plating solution to the insulating layer 11 of the substrate 1. One side is between each anode 21 . The electrolytic plating apparatus 2 is configured such that the other side of the insulating layer u is formed by the electrolytic plating solution 100102585 22 201139753 when the supply portion 23 flows the electric contact liquid L' (f) between the other surface of the insulating layer u and the anode 21 The electrolytic plating solution L of the anode 21 (f) is discharged to the lower side than the other surface of the insulating layer π. Further, the electrolytic material set 2 is provided with a control (four) 27 for controlling the amount of current flowing between each of the anode 21 and the cathode 20. Next, the electrolytic plating apparatus 2 of the present embodiment will be described in detail. First, the substrate 成为 which is the object of the electric clock of the electrolytic plating apparatus 2 will be described. As shown in Fig. 14, the substrate 丨 is provided with an insulating layer 11 and a conductive layer 12 on which through holes lu are formed. The substrate 1 is, for example, a flexible circuit board. The insulating layer 11 is, for example, a polyimide film having a thickness of 10 #m to 2〇〇#m& right. The insulating layer 11 is formed with a plurality of through holes penetrating through the front surface and the back surface. The porch through hole ill is formed to have a larger diameter from the surface (the one surface) side toward the back surface (the other surface) side of the insulating layer π. It is a tapered shape. A conductive layer 12 for blocking an opening of the plurality of through holes U1 is provided on one side of the insulating layer 11. The conductive layer 12 is a metal film, for example, a copper film. The thickness of the conductive layer 12 is, for example, 5 to 50 #m. As shown in FIG. 10 to FIG. 13, the electrolytic plating apparatus 2 of the present embodiment includes the cathode 20, the anode 21, the electrolytic plating solution supply unit 23, the transfer means 25, 100102585 23 201139753 24, and the support member control unit 27, and is filled with electrolysis. The electroplating slurry 26 of the plating solution L is an apparatus for continuously electroplating the substrate 1 in the form of a sheet by the transfer roller 25 on the sheet. Electroplating bath The plating bath 24 is filled with an electrolytic plating solution [for example, a sulfuric acid plating solution. The electrolytic plating solution 21 of the temple is not impregnated in the plating bath 24, and the electrolytic plating solution B is disposed above the liquid level of the electrolytic plating solution B in the plating tank 24, where the anode 21 can be a soluble anode. Alternatively, the plurality of anodes 21 may be insoluble in the direction in which the substrate 1 is transported (Fig. 1A to Fig. 1 to the anode). In the present embodiment, the transport directions of one anode U = square substrate 1 are arranged at intervals. Each of the anodes 21 is composed of a plurality of metal sheets (two sheets in the present embodiment). The plurality of metal plates 211 constituting each of the anodes 21 are arranged at intervals in a direction orthogonal to the conveyance direction (the y direction in Figs. 10 to 12). The anode 21 is supported by the support member 26 as shown in FIG. 13, and the metal plates 211 adjacent to each other in the transport direction of the substrate 1 are adjacent to each other in the direction orthogonal to the transport direction of the substrate (y direction). The metal plates 211 are disposed at intervals from each other. Fig. 13 (4) is a plan view of the supporting member 26, and Fig. 13 (B) is a sectional view taken along line IV-IV of Fig. 13 (A). The support member 26 is made of an insulating material (e.g., hard vinyl chloride) 100102585 24 201139753 and forms a recess 261 for embedding the metal plate 211 of the anode 21. Therefore, by embedding the anode 21 in the supporting member 26, an insulating material is disposed between the anodes 21, and the anodes 21 are insulated by an insulating material. Further, a Beton groove 262 is formed in the center of the support member 26 in the conveying direction of the substrate i. The through grooves 262 are located between the metal plates 211 adjacent to each other in the direction orthogonal to the direction in which the substrate is conveyed, and the electrolytic plating solution L is supplied to the substrate 1 via the through grooves 262. As shown in FIG. 10 and FIG. 11, the width W1 of the anode 21 (in the present embodiment, 'the gap between the two metal plates 211 arranged in the direction orthogonal to the conveyance direction of the substrate 1 and the two metal plates The total value of the width of 211 is smaller than the width W2 of the substrate 1 (the length in the direction orthogonal to the conveyance direction of the substrate 1). Further, in the present embodiment, the width W3 of the support member 26 (the length in the direction orthogonal to the substrate transport direction) is smaller than the width W2 of the substrate 1. Further, in the plan view from the upper side of the plating bath 24, the through grooves 262 are located between the metal plates 211 arranged in the direction orthogonal to the substrate transport direction. The gap ′ is the width W2 of the direction orthogonal to the conveying direction of the substrate 1 . Central office. Here, as shown in FIG. 11, in the state where the substrate 1 is transferred onto the anode 21, the conductive layer 12 and the metal of the substrate 1 located directly above the metal plate 211 are in a state where the substrate 1 and the anode 21 are opposed to each other. The distance 板 between the plates 211 is preferably 〇. 1 mm or more and 10 mm or less. Hunting is set to 0. It is 1 mm or more and has a through hole 111 100102585 25 201139753 which is prevented from being deposited from the substrate 1 to the outside. The physical contact between the copper plating film of p and the anode 2丨 prevents the effect of the phenomenon of electric ore burning caused by current concentration, and can be accurately controlled to flow to the anode and cathode of each anode by setting it as 1 or less. 2 The effect of the amount of current between turns. That is, when the distance Η is too large, the current value flowing between the anode 21 and the cathode 2 有 may largely deviate from the set current value. Therefore, it is preferable to set the distance Η to 1 〇 mrn or less. As shown in Figs. 10 and 12, the cathode 2 is formed in a roll shape and disposed above the anode 21. The cathode 20 is disposed so as to be in contact with the conductive layer 12 on the surface of the substrate 1, and functions as a transfer roller for transporting the substrate. For example, the cathodes 20 are respectively disposed on the base end side and the front end side in the transport direction of the substrate crucible. The conveying roller 25 is a member that conveys the substrate 1 on the anode 21. As shown in Fig. 11, the electrolytic plating solution supply unit 23 supplies the electrolytic plating solution L in the plating tank 24 toward the substrate 1 disposed on the upper portion of the plating tank 24. The electrolytic ore supply unit 23 is composed of, for example, a spring P and a pipe μ connected to the pump p. The electrolytic plating solution L discharged from the electrolytic plating solution supply unit 23 is supplied to the substrate 1 via a gap between the metal plates 211 (i.e., the through grooves 262). Further, as shown in FIG. 11, the electrolytic plating solution L flows between the insulating layer 11 of the substrate 1 and the metal plate 211, and the end portion from the outer side of the metal plate 211 due to its own weight (the direction of transport with the substrate 1 is positive) The end of the direction of the intersection) is lowered toward the side of 100102585 26 201139753. Further, the piping Μ of the plurality of electrolytic plating solution supply units 23 may be provided, and the electrolytic plating liquid B may be supplied throughout the longitudinal direction of the through grooves 262, or may be configured as the through grooves 262 as shown in FIG. A plate member 28 having a plurality of through holes 281 disposed along the longitudinal direction of the through groove 262 is disposed below, and the electrolytic plating solution 1 is supplied through the plurality of through holes 281 and the through grooves 262 throughout the longitudinal direction of the through grooves 262. Further, Fig. 17 is a cross-sectional view showing the addition of the sheet material 28 in the cross-sectional view taken along the line VIII_vm of Fig. 13 (Α). Further, the arrow of the head 17 indicates the flow of the electrolytic electric ore l. W does not control the Ministry of one, Gan Kiss as Xingyin 20 people of the current. In the present embodiment, the control (four) is an electric resistance which is disposed between each of the anode 21 and the cathode 2A. Further, in the present embodiment, the anode 21 is composed of two metal plates 211 arranged at intervals, but the current value flowing between the sheet metal plate 211 and the cathode 2 in each anode 21 flows and flows. The current values between the other two 211 and the cathode 20 are the same. The plate through-hole (1) is a tapered shape from the one opening side (the other side of the conductive layer 12 side is expanded in diameter). Therefore, as the second power shovel progresses, the area of the electric ore increases. Therefore, in the case where the front end side of the transport direction is increased in the manner of the electric current flowing between the anodes 21 and the cathodes 2Q, the control unit 27 controls the electrons on the surface of the electric ore surface to obtain a density of approximately 100102585 27 201139753. . That is, the through-holes are sequentially opposed to the respective anodes 21, and the current density on the surface to be plated of the through-holes (1) is substantially the same in the state in which the through-holes m are opposed to the anodes 21, respectively. Specifically, the resistance value of the control unit 27 on the distal end side in the substrate transport direction is smaller than the resistance value of the control unit 27 on the proximal end side in the substrate transport direction. Thereby, the desired plating film can be obtained. Further, the current value flowing between the anodes and the cathodes 20 is set so as to become larger toward the front end side in the substrate transport direction. However, the present invention is not limited thereto, and may be required according to the growth stage of the electrode film. The current density is controlled in such a manner as the resistance value of the control unit 27. Next, a plating method using the electrolytic plating apparatus 2 as described above will be described. First, the outline of the plating method of the present embodiment will be described. The plating method of the present embodiment is a plating method in which a substrate 1 is conveyed on a plurality of anodes 21 to form an electrolytic plating film in the through holes 111. The plating method comprises the following steps: along the substrate! The substrate is transported above the plurality of anodes 21 disposed in the transport direction, and the electrolytic electric ship is flowed between the other side of the insulating layer u and the anodes 21 of the plurality of anodes 21 opposite to the other surface of the insulating layer u. A key film is formed in the through hole (1); and the electrolytic clock liquid between the other surface of the insulating layer 11 and the anode 21 is discharged to the lower side of the insulating layer 11. And in the above steps of forming the plating film, the amount of current flowing between the respective anodes 100102585 28 201139753 21 and the cathode 20 is controlled. Next, the plating method of this embodiment will be described in detail. First, the substrate 1 is prepared. The substrate 1 is wound into a roll shape, and the substrate 1 is supplied to the money slot 24 via the transfer roller and the cathode 2〇. At this time, the substrate 1 is supplied in such a manner that the conductive layer 12 is in direct contact with the cathode 20. Furthermore, degreasing was carried out in the front section of the electrolysis. Before the substrate 1 is supplied onto the money register 24, the current value between the & pole 2 and the cathode 2 is adjusted by the control unit 27 in advance. For example, the current value is adjusted by the control unit 27 so that the current value flowing between the cathode 2 and the anode 21 is increased from the base end side toward the tip end side in the substrate transfer direction. The substrate roll is conveyed by the transfer roll 25 and the cathode 2 on the plating tank 24, and the electrolytic plating solution L in the electric ore tank 24 is supplied from the anode 21 side toward the substrate upward. The electrolytic plating solution L is supplied to the substrate via a gap formed between the metal plates 211 arranged in the direction of the base ) of the anode crucible (the through-groove 262 in the actual mask). The insulating layer u is between the other metal plates 211. The electrolytic electric ore liquid L is also supplied to the beacon 1 of the insulating layer U, whereby the gap between the metal plate 211 and the insulating layer 11 and the through hole 111 are filled with the electrolysis liquid L, and the electrolytic electric liquid L and the metal plate are filled. 2U and the conductive layer 12 exposed from the through hole (1) are in contact with each other, and an electric record is deposited inside the through hole. Further, while the substrate 1 passes through the upper portion of the plating tank 24, the electrolytic plating solution is continuously supplied from the through grooves 262 100102585 29 201139753. Therefore, the gap between the metal plate 211 and the insulating layer 11 and the state in which the electrolytic hole L is filled in the through hole 111 are maintained during the period in which the substrate 1 passes through the upper portion of the plating bath 24. As shown in Fig. 11, the electrolytic plating solution 1 supplied between the other surface of the insulating layer U of the substrate 1 and the metal plate 211 is at the end of the outer side of the metal plate 211 due to its own weight (the end opposite to the side of the through groove 262). The side is laterally lower than the other side of the insulating layer 11. Here, as described above, the width W1 of the anode 21 is smaller than the width W2 of the substrate 1, and the substrate is viewed from above the plating bath 24! The end portion also protrudes from the end portion of the anode 21 in the direction (outer side) orthogonal to the direction in which the substrate is conveyed. Further, in the present embodiment, the width W3 of the supporting member 26 supporting the anode 21 is also smaller than the width W2 of the substrate 1, and the end portion of the substrate 1 also protrudes outward from the supporting member 26. Therefore, the electrolytic plating solution L supplied between the other surface of the insulating layer 11 of the substrate 1 and the metal plate 2U does not contact the end portion or the side surface of the conductive layer 12 on the insulating layer 11 but falls on the plating bath 24 side. And recovered by plating tank 24. Thereby, plating of the conductive layer 12 can be suppressed. Further, the electrolytic plating solution 1 recovered by the plating tank 24 flows again from the through groove 262 toward the substrate 1 side by the electrolytic plating solution supply unit 23. Although not shown in the plating bath 24, the electrolytic plating solution may be periodically analyzed by an adjusting means, and the concentration of each component in the electrolytic plating solution L may be adjusted. The current value flowing between each of the anodes 21 and the cathodes 100102585 30 201139753 20 is adjusted by the control unit 27 as described above. For example, the anode 21 and the cathode 20 are disposed between the anode and the cathode 20 at a position closest to the base end side in the substrate transport direction. The mode of the current of 1 i is controlled by the control unit 27. The anode 21 and the cathode 20 are disposed between the anode 21 and the cathode 20 at a position closer to the base end side in the substrate transport direction. The mode of the current of 2 i is controlled by the control unit 27. In addition, the front end side of the substrate transport direction is increased by 0. The mode in which the current value is increased by 1 i is controlled by the control unit 27. In the present embodiment, the substrate 1 passes through the anode 21 without stopping. The base material 1 is plated in the through hole 111 while passing through the anode 21. However, the substrate 1 may pass through the plurality of anodes 21 while temporarily stopping on the anode 21. The substrate 1 having the electric bonds in the through hole 111 is washed with water to complete the substrate 1 on which the plating has been performed inside the through hole 111. Thereafter, the substrate 1 is cut as necessary, and a metal film is adhered to the other surface side of the insulating layer 11 of the substrate 1. Thereafter, the conductive layer 12 and the above metal film are selectively removed to form a circuit layer, thereby obtaining a circuit substrate. This circuit board is a flexible circuit board (flexible printed wiring board). Next, the effects of the embodiment will be described. In the present embodiment, the electrolytic plating solution L between the other surface of the insulating layer 11 and the anode 21 flows to the lower side than the other surface of the insulating layer 11, so that the conductive layer provided on one side of the insulating layer 11 can be suppressed. The electrolytic plating solution L is adhered to the side of the 12, and plating is deposited on the side of the conductive layer 12. Thereby, plating can be stably performed inside the through hole 111. 100102585 201139753 In particular, in the present embodiment, when the substrate 1 and the anode 21 are opposed to each other, the width W1 of the anode 21 is smaller than the width W2 of the substrate ,, and the end of the substrate 1 is viewed from above the plating bath μ. The portion protrudes more toward the direction orthogonal to the substrate (the outer side) than the end portion of the anode 21. Further, in the present embodiment, the width W3 of the support member 26 holding the anode 21 is also smaller than the width W2 of the base material 1, and the end portion of the base material 1 also protrudes outward from the support member 26. Therefore, the electrolytic plating solution 1 between the anode 21 and the insulating layer u is not in contact with the end portion of the insulating layer 11 and is discharged to the plating bath side, so that the plating of the side surface of the conductive layer 12 can be surely suppressed. Further, in the prior art manufacturing method as described above, there is a class "Electrical Chromatography". In order to solve this problem, for example, when the substrate has a discontinuous shape, an insulator plate such as a resin is attached to the conductive layer side, and then the outer surface of the circuit board is sealed with an insulating tape or the like to form the surface of the conductive layer. A method in which the side surface is isolated from the plating solution and electroplated; or in the case where the substrate is in a continuous shape, the conductive layer and its side surfaces are completely covered by a continuous insulating tape. However, these methods all exist in the adhesion of the tape before electroplating, and the palladium in the stripping operation after electroplating requires a large amount of time to improve the productivity. On the other hand, in the present embodiment, the electrolytic plating solution L flows between the other surface of the insulating layer η of the substrate ( (the surface opposite to the surface on which the conductive layer is provided) and the anode 21, in the through hole U1. A plating film is formed inside. Further, the electrolytic key liquid L is discharged to the lower side than the other surface of the insulating layer 11. 100102585 32 201139753 Thereby, the conductive layer disposed on one side of the insulating layer 11 does not contact the electrolytic plating solution L, so that the conductive layer 12 can be not covered by a photomask or the like, thereby saving the through hole 绝缘 1 of the insulating layer 11 The time taken for the plating treatment in the inside can be performed efficiently. In the present embodiment, the current value flowing between each of the anode 21 and the cathode 20 is adjusted by the control unit 27. In the present embodiment, the amount of current flowing between the anodes 21 and the cathodes 2 is increased toward the distal end side in the substrate transport direction by the control unit 27. Here, the through hole ill of the base material 1 has a tapered shape from which the opening side (the opening on the conductive layer 12 side) is expanded toward the other opening side. Therefore, as the plating inside the through hole 1Π progresses, the plating area becomes large. Therefore, the current density on the surface to be plated can be made substantially uniform by controlling the control unit 27 so that the electric current between the anode 2 and the cathode 2 is increased toward the distal end side in the substrate transport direction. Thereby, the desired plating film can be obtained. Further, in the present embodiment, the electrolytic plating solution is allowed to flow upward from the gap between the metal plates 211 constituting the anode 21 (the through grooves 262 in the present embodiment) toward the substrate 1 side. Thereby, the electrolytic plating solution can be stably flowed between the insulating layer 11 of the substrate 1 and the anode 21. For example, it is also considered that as shown in Fig. 15, the electrolytic plating solution L is transferred from the substrate toward the base end side toward the substrate. The gap with the anode 21 flows (the arrow of Fig. 15 indicates the flow of the electrolytic plating solution L). However, when the transfer distance on the plating tank 24 is increased, it is necessary to cause the electrolytic plating solution L to flow from the base end side of the substrate 1 to the front end side in the direction of the conveyance direction 100102585 33 201139753, and it is difficult to electrolyze the electrolytic plating solution L. The liquid L is stably supplied between the substrate and the anode 21. On the other hand, in the present embodiment, a gap is formed between the adjacent one of the pair of metal plates 2 in the direction orthogonal to the direction in which the substrate is conveyed, and the electrolytic key solution is supplied to the substrate 1 and the anode 21 from the gap. Therefore, even if the electrolytic key liquid L does not flow very well, the electrolytic plating solution L can be stably flowed between the insulating layer 11 of the substrate 1 and the anode 21. Further, in the present embodiment, the position of the gap between the adjacent metal plates 211 in the direction orthogonal to the substrate transport direction of the anode 21 (the through groove 262 in the present embodiment) is present in the substrate. Since the electrolytic plating solution L flows substantially uniformly from the through groove 262 to the end side of the substrate 1 (the end side in the substrate conveying direction), the electroplating solution L can be stably applied to the center. . Further, in the present embodiment, the anode 21 is fitted into the insulating support member 26. Thereby, the anodes 21 adjacent to each other in the substrate transport direction are insulated from each other, so that the current value flowing between the anodes 21 and the cathodes 20 can be a desired current value. Further, the present invention is not limited to the above-described embodiments, and modifications, improvements, etc. within the scope of the purpose of the invention are included in the present invention. For example, in the above embodiment, each of the anodes 21 is constituted by a plurality of metal plates 211, but the invention is not limited thereto. For example, as shown in Fig. 16, the anode 210 may be constituted by a single metal plate 212. Thereby, the constitution of the plating apparatus can be simplified. 100102585 34 201139753 In this case, the through hole 212A is formed in the metal plate 212, and the electrolytic plating solution L may be supplied from the through hole 212 A to the substrate 1 side. Further, in the above-described embodiment, the through hole 1U has a tapered cross-sectional shape. However, the through hole 1U is not limited thereto, and may have a shape in which one of the openings from the through hole 1U has a uniform diameter toward the other opening, for example, a columnar shape. In the above-described embodiment, the current value flowing between the anode 21 and the cathode 20 is set so as to become larger toward the front end side in the substrate transport direction. However, the present invention is not limited thereto. For example, when the thickness of the insulating layer is very thick, compared with the opening diameter of the through hole, when the ice size of the beacon hole is very large, the metal ions in the electric ore liquid are difficult to reach the inside of the through hole at the age of electricity. 1. In the case where the current density is high, there is a case where a void is formed on the plating film due to a gas such as hydrogen. Therefore, the current density is lowered at the initial stage of electroplating. The electric film t is formed in the late stage of plating near the opening σ of the through hole, and the supply to the electric forging susceptor becomes paste, so that the wire is increased to increase the plating speed. = The growth phase of the film' controls the current flowing between the anodes. Further, in the above-described embodiment, the key groove 24 is continuously supplied to the substrate roll, and is not limited thereto. For example, the substrate is also conveyed as a non-roller substrate. Sheet substrate. The π-plate shape is applied to the plating tank 24. 100102585 35 201139753 Hereinafter, a third embodiment of the present invention will be described based on the drawings. First, the outline of the electrolytic plating apparatus of the present embodiment will be described with reference to Figs. 18 to 20 . Figure 18 is a plan view of the electrolytic plating apparatus 2, Figure 19 is a cross-sectional view taken along line II-II of Figure 18, and Figure 20 is a cross-sectional view taken along line III-III of Figure 18. The electrolytic plating apparatus 2 of the present embodiment is used for the substrate 1 having the insulating layer 11 having the through holes 111 formed therein and the conductive layer 12 provided on one of the insulating layers 11 and blocking one of the openings of the through holes 111. An electrolytic plating apparatus that performs electrolytic plating in the through hole 111 while being conveyed on the anode 21. The electrolytic plating apparatus 2 includes an anode 21, a cathode (not shown) connected to the conductive layer 12, and a transfer unit 20 that sandwiches the other surface of the insulating layer 11 of the substrate 1 with respect to the anode 21. The electrolytic plating solution L is brought into contact with one of the surfaces of the conductive layer 12 exposed from the through hole 111, and the substrate 1 is transferred onto the anode 21 and the electrolytic plating solution L. In the transport unit 20, the base material 1 is conveyed while holding the base material while at least one of the peripheral portions of the conductive layer 12 of the base material 1 is warped upward. Next, the substrate 1 to be plated for the electrolytic plating apparatus 2 will be described. As shown in Fig. 22, the substrate 1 includes an insulating layer 11 and a conductive layer 12 in which through holes 111 are formed. The substrate 1 is, for example, a flexible circuit board. 100102585 36 201139753 The insulating layer 11 is, for example, a polyimide film having a thickness of about 10 //m to 200 //m. A plurality of through holes 111 penetrating the front surface and the back surface are formed in the insulating layer 11. The through hole 111 is formed to have a larger diameter from the surface (one surface) side of the insulating layer 11 toward the back surface (the other surface) side, and has a tapered cross section. One side of the insulating layer 11 is provided with a conductive layer 12 that blocks an opening of a plurality of through holes 111. The conductive layer 12 is a metal film such as a copper film. The thickness of the conductive layer 12 is, for example, 5 to 50 #m. In the present embodiment, the base material 1 has a planar rectangular shape, and the entire peripheral portion of the base material 1 is housed inside the plating tank 24 in plan view, and is sized to be transportable on the anode 21. Next, the electrolytic plating apparatus 2 will be described in detail. This electrolytic plating apparatus 2 is a one-piece apparatus for electrolytically plating the substrates 1 one by one. As shown in FIG. 18 to FIG. 21, the electrolytic plating apparatus 2 of the present embodiment includes a cathode (not shown), an anode 21, an electrolytic plating solution supply unit 23, a plating tank 24 filled with an electrolytic plating solution L, a conveying unit 20, and support. Member 26. The plating bath 24 is filled with an electrolytic plating solution L, an electrolytic plating solution such as copper sulfate. The anode 21 is not immersed in the electrolytic plating solution L in the plating bath 24, but is disposed above the liquid level of the electrolytic plating solution L in the plating tank 24. Here, the anode 21 may be a soluble anode or an insoluble anode. 100102585 37 201139753 The anode 21 is composed of a plurality of metal plates (anode portions) 211, and is disposed in the transport direction of the substrate 1 (the direction between FIG. 18 and FIG. 2) and the direction orthogonal to the transport direction (FIG. 18). ~ Figure 20 of the 7 direction). For example, when the conveyance direction of the substrate i is "column" and the direction orthogonal to the conveyance direction is "row", the metal plate 211 is arranged in a row of 1 and 2 rows. Each of the metal plates 211 is supported by the support member 26 as shown in FIG. 21, and the metal plates 211 adjacent to each other in the transport direction (X direction) of the substrate 1 and the direction orthogonal to the transport direction of the substrate 1 The adjacent metal plates 211 in the direction are disposed at intervals from each other. Fig. 21(A) is a plan view of the support member 26, and Fig. 21(B) is a cross-sectional view taken along line IV-IV of Fig. 21(a). The support member 26 is made of, for example, an insulating material, and forms a recess 261 for inserting into the metal plate 211. A through groove 262 extending in the conveying direction of the base material 1 is formed in the center of the support member 26. The through groove 262 is located between the metal plates adjacent to each other in the direction orthogonal to the conveying direction of the substrate i, and the electrolytic money liquid L is supplied to the substrate ι side via the through grooves 262. As shown in FIG. 18 and FIG. 19, the width W1 of the anode 21 (in the present embodiment, the gap between the two metal plates 211 arranged in the direction orthogonal to the conveying direction of the substrate! and the two metal plates) The total value of the width of 211 is smaller than the width W2 of the substrate 1 (the length in the direction orthogonal to the conveyance direction of the substrate i). Further, in the present embodiment, the length of the width of the support member % orthogonal to the direction in which the substrate is conveyed is smaller than the width W2 of the substrate 1. 100102585 38 201139753 Further, in the plan view from the upper side of the plating bath 24, the gap between the metal plates 211 arranged in the direction orthogonal to the substrate transport direction, that is, the through grooves 262 are orthogonal to the transport direction of the substrate 1. The direction of the width W2 is approximately at the center. . Here, as shown in FIG. 19, the conductive layer 12 and the metal plate of the soil material 1 located directly above the metal plate 211 are conveyed to the anode 21 so that the base electrode 21 is opposed thereto. The distance Η between 211 is preferably 〇1 mm or more. By making the distance Q Q. l mm or more, with avoiding the substrate! The contact with the anode 21 prevents the effect of electroplating scorching caused by current concentration. Further, the upper limit of the distance Η is not particularly limited, but is preferably, for example, ι 〇〇〇 mm or less. The transfer unit 20 transports the substrate 1 on the anode in a state where the other surface of the insulating layer 11 of the substrate 1 is opposed to the anode 21. The transport unit 20 is provided with a holding portion that adsorbs and holds the substrate 1 as shown in FIG. 201. The connection portion 2〇2 connected to the holding portion 201 and the connection to the connection portion 2〇2 are added. The holding portion 2G and the connecting portion are both made of a conductive material, for example, a metal. As shown in Fig. 20, the holding portion 2〇1 has a trapezoidal cross-sectional shape and is vacuum-adsorbed on the conductive layer u of the substrate 1. The holding portion 2〇1 has an opposite surface to the rectangular shape of the anode, and the transfer surface from the opposite ship 100102585 39 201139753 extends toward the front end portion 201B and the direction from the opposite side. The extension surface 2〇lc whose end portion extends upward. The conductive layer 12 of the substrate 1 is adsorbed and held along the opposite surface 2〇18 of the transport unit 20 and a pair of extended surfaces 201B and 201C. In other words, the conveying unit 2 holds the base material so that the front end side portion in the conveying direction of the base material 1 and the rear end side portion in the conveying direction are warped upward (opposite the side opposite to the anode 21). The connecting portion 202 connects the roller 203 and the holding portion 201. As shown in Fig. 20, the roller 203 is rolled on the rail 29 connected to the cathode, and the substrate 203 is conveyed on the anode 29 by rolling the roller 203 on the rail 29. Further, the conductive layer 12 of the substrate 1 is electrically connected to a cathode (not shown) via the rail 29, the roller 203, the connecting portion 202, and the holding portion 2〇1. As shown in Fig. 19, the electrolytic plating solution supply unit 23 supplies the electrolytic plating solution L in the plating tank 24 toward the substrate i disposed on the upper portion of the plating tank 24. The electrolysis ore supply unit 23 is composed of, for example, P and a pipe M connected to the fruit p. The electrolytic plating solution L discharged from the electrolytic plating solution supply unit 23 is supplied toward the substrate 1 via a gap between the metal plates 211 (i.e., the through grooves 262). And, as shown in FIG. 19, the electrolytic plating solution L flows between the insulating layer 11 of the substrate 1 and each of the metal plates 211, and the end portion from the outer side of each of the metal plates 211 due to its own weight (the conveying direction with the substrate 1) The end of the orthogonal direction) the side falls downward. Further, it may be configured such that the plurality of electrolytic plating solution supply units 23 are provided with a pipe 100102585 40 201139753, and the electrolytic plating solution is supplied throughout the length direction of the entire Beton groove 262. Alternatively, as shown in FIG. A plate member 28 having a plurality of through holes 281 disposed along the longitudinal direction of the through groove 262 is disposed below the through groove 262, and the electrolytic plating solution is supplied through the plurality of through holes 281 and the through grooves 262 throughout the longitudinal direction of the through groove 262. . Further, Fig. 24 is a cross-sectional view showing the addition of a sheet to a cross-sectional view of the supporting member 26. Further, the arrow of Fig. 24 indicates the flow of the electrolytic plating solution B. The control unit 27 shown in Fig. 20 is used to control the flow of each In the present embodiment, the control unit 27 is disposed between the metal plate (anode portion) 211 and the cathode (not shown). In addition, the control unit 27 is disposed between the metal plate 211 and the cathode (not shown). In the embodiment, in the two metal plates 211 arranged in the direction orthogonal to the direction in which the substrate 1 is transported, the current value flowing between one of the metal plates 2n and the cathode (not shown) and the other metal plate 211 In the present embodiment, the through hole 111 has a tapered shape that expands in diameter from one opening side (opening on the conductive layer 12 side) toward the other opening side. Therefore, as the plating in the inside of the through hole 111 progresses, the plating area becomes large. Therefore, for example, the amount of current flowing between the respective metal plates 211 and the cathode is increased by controlling the amount of current flowing between the metal plates 211 and the cathode toward the front end side in the substrate transfer direction. Department 27 control, you can The current density on the plated surface is substantially uniform. That is, the through hole ln is opposed to the respective metal plates 211, and the current on the plated surface of the through hole 111 is in a state in which the through holes hi and the respective metal plates 211 face each other. The density becomes approximately 100102585 41 201139753. In particular, the control portion of the control portion 27 before the substrate transport direction is smaller than the control portion on the proximal end side in the substrate transport direction, whereby the desired plating film can be obtained. Further, the resistance value flows in the anode portion of the anode portion 211 in the direction in which the fish material is conveyed toward the front end side. The current value in the direction of the plating film corresponds to the growth stage of the plating film, and it is not limited to this. The resistance value of the control unit 27 can be produced. The method of controlling the current density is as follows, and the electrolysis described above is used. The plating method of the gold plating apparatus 2 is performed. First, the outline of the electric money method of the present embodiment is performed. The plating method of the present embodiment includes the steps of: preparing a substrate ι, and transporting the substrate 1 on the anode 21 and the electrolytic electric ship L, and the other side of the money insulating layer U facing the anode 21 to make the electrolytic electric ship L The electrodeposited film is formed in the through hole m while being in contact with the portion of the conductive layer 12 exposed from the through hole U1. In the above step of transporting the substrate i, at least the peripheral portion of the conductive layer 12 of the substrate 1 is formed. - Partially holding the substrate-surface on the opposite side (4) of the anode 21 to convey the substrate 1 on the anode 21 and the electrolytic electric ship L. Next, the electric method of the present (fourth) state will be described in detail. First, the substrate 1 is prepared. Furthermore, the degreasing of the substrate i was carried out before the electrolysis clock. 100102585 42 201139753 Before the substrate i is supplied to the electric (four) 24, the county adjusts the current value flowing between each anode #211 and the cathode by the control unit 27. For example, the current value is adjusted by the control unit 27 so that the current value flowing between the cathode and the anode portion 211 increases from the base end side toward the tip end side in the substrate transfer direction. Next, the substrate 1 is held in the conveying unit 20. Specifically, the conductive layer 12 of the substrate 1 is adsorbed to the holding portion 2〇1' so that the leading end portion of the substrate 1 in the conveying direction and the rear end portion in the conveying direction are read upward. Thereafter, the substrate is conveyed on the electric ore tank 24 by the conveying unit 20. At this time, the electrolytic key liquid L of the electric ore tank 24 t is supplied to the upper side from the anode 21 side toward the substrate. The electrolytic electro-hydraulic liquid L is supplied to the insulating layer u of the substrate 经由 through a gap formed between the metal plates 211 arranged in the direction orthogonal to the substrate transport direction of the anode 21 (the through-groove 262 in the present embodiment) The other side is between the metal plate 211. The electrolytic money liquid L is also supplied into the through hole (1) of the insulating layer u. Thereby, the gap between the metal plate 2n and the insulating layer u and the through hole (1) are filled with the electrolytic electric ore liquid L, and the electrolytic plating solution L is in contact with the metal plate 211 and the conductive layer 12 exposed from the through hole ill, and is in the through hole. Electric forging is deposited inside U1. Further, while the substrate i passes through the upper portion of the electric sump 24, the object electric ship L is continuously supplied from the through groove 262. Therefore, the record i moves on the Hetton liquid L. Further, while the substrate i passes through the upper portion of the electric forging groove 24, the gap between the metal plate 211 and the insulating layer 11 and the state in which the through hole 111 is filled with the electrolytic electric ore L are maintained. 100102585 43 201139753 As shown in Fig. 19, the electrolyzed bell liquid 1 supplied between the other side of the insulating layer η of the substrate 1 and the metal plate 211 is from the outer side of the metal plate 211 due to its own weight (with the through groove 262 side). The end of the opposite side is laterally lower than the other side of the insulating layer 11. Here, as described above, the width W1 of the anode 21 is smaller than the width W2 of the substrate 1, and the end portion of the substrate 1 is more orthogonal to the substrate transport direction than the end portion of the anode 21 in a plan view from above the plating bath 24. The direction (outside) protrudes. Further, in the present embodiment, the width W3 of the support member 26 supporting the anode 21 is also smaller than the width W2 of the base material 1. The end portion of the base material 1 also protrudes outward from the support member 26. Therefore, the electrolytic plating solution L supplied between the other side of the insulating layer 11 of the substrate 1 and the metal plate 211 does not contact the end or side of the conductive layer on the insulating layer 11 but falls on the side of the money slot 24 And recovered by plating tank 24. This can be suppressed in the case where plating of the conductive layer 12 is deposited. Further, the electrolytic plating solution L recovered by the plating tank 24 flows again from the through groove 262 toward the substrate 1 side by the electrolytic plating solution supply unit 23. Although not shown in the electric ore tank 24, the electrolytic plating solution L can be periodically analyzed by an adjusting means, and the concentration of each component in the electrolytic clock liquid L can be adjusted. As described above, the control unit 27 adjusts the current value flowing between the anode portions 2 and the cathode. For example, it is disposed between the anode portion 211 and the cathode disposed closest to the base end side in the substrate transport direction. The mode of the current is controlled by the control unit 27. Therefore, the anode portion 211 and the cathode disposed at a position near the base end side of the substrate transport direction are nearly 0,058,585, and the cathode is 211. The mode of the current of 2 i is controlled by the control unit 27. Further, it is increased by 0 to the front end side in the direction in which the substrate is conveyed. The mode in which the current value is increased by 1 i is controlled by the control unit 27. In the present embodiment, the substrate 1 is passed through the anode 21 without stopping. The base material 1 is plated in the through hole U1 while passing through the anode 21. However, the substrate 1 may be temporarily stopped on the anode 21 and passed through the plurality of anode portions 211. The substrate to be plated inside the through hole 111 is washed with water to complete the substrate 1q. Thereafter, the substrate 1 is cut as necessary, and a metal film is adhered to the other surface side of the insulating layer η of the substrate. Thereafter, the conductive layer 12 and the above metal film are selectively removed to form a circuit layer, thereby obtaining a circuit substrate. This circuit board is a flexible circuit board. Next, the effects of the embodiment will be described. In the present embodiment, when the base material 1 is subjected to electric ore, the front end side portion of the base material i and the conveying direction material (4) are divided upward (the opposite side to the anode 21 and the electrolytic liquid liquid) The material (4) is moved on the electroplating solution 1 in the transfer portion 20'. Therefore, it can be suppressed from the front end side portion of the conductive layer 12 of the substrate 1 in the transport direction and the rear end side portion in the transport direction, that is, opposite to the substrate transport direction. In addition to the above, in the present embodiment m, in the case of electroplating, the electrolysis of the other side of the insulating layer 11 and the anode 21 is transferred from the substrate to the substrate 100102585 45 201139753 The direction orthogonal to the side flows to the lower side of the other side of the insulating layer u, so that it is possible to suppress the adhesion of the electrolysis clock liquid L to the side of the substrate in the direction in which the conductive layer 12 is applied, and to carry it on the base of the conductive layer 12. In the case where the electric field is deposited on the side of the direction, the plating can be prevented from being deposited on the entire side surface of the conductive layer 12, so that the plating can be stably performed inside the through hole lu. In the base When the crucible is opposed to the anode 21, the width W1 of the anode 21 is smaller than the width W2 of the substrate i, and the end portion of the substrate 1 is more oriented toward the substrate than the end portion of the anode 21 in a plan view from above the plating bath 24. Further, in the present embodiment, the width W3 of the supporting member 26 supporting the anode 21 is also smaller than the width W2 of the substrate 1, and the end portion of the substrate 1 also protrudes outward from the supporting member %. Therefore, the electrolytic plating solution 间 between the anode 21 and the insulating layer 11 is not discharged to the end portion of the insulating layer 11 but is discharged to the side of the electric ore tank 24, so that the plating of the side surface of the conductive layer 12 can be surely suppressed. In the prior manufacturing method, when the channel is formed by electroplating in the hole of the insulating layer, if the side surface of the first metal film is exposed, plating is deposited on the side surface of the first metal film. In this case, The area of the side surface of the metal film is very large compared with the area of the hole which should be deposited by electroplating. Therefore, it is preferable to carry out electroplating precipitation, and it is difficult to carry out electric ore inside the hole. Especially when the diameter of the hole is very small, this phenomenon is relatively Significant. In the present embodiment, as described above, since plating can be reliably performed on the side surface of the conductive layer 12 by 100102585 46 201139753, plating can be surely performed inside the through hole 111. In the prior manufacturing method, there is a problem in which plating is deposited on the side surface of the first metal crucible. In order to solve this problem, for example, when the substrate has a discontinuous shape, it is considered that an insulator such as a resin is attached to the first metal film side. The board is followed by a method of sealing the outer surface of the first metal film by using an insulating tape or the like to seal the surface of the first metal film from the plating solution and plating. However, the method has adhesion to the tape before electroplating, and is then peeled off after plating. It takes a lot of time to improve productivity. On the other hand, in the present embodiment, the electrolysis liquid liquid L' flows through the through hole in the other surface of the insulating layer 11 of the substrate 1 (the surface opposite to the surface on which the conductive layer is provided) and the anode 21. A plating film is formed in lu. Further, the electrolytic plating solution L is discharged to the lower side of the insulating layer. Furthermore, when the base material 1 is subjected to the electric money, the base material 1 is held in the conveying unit so that the front end side portion and the second feeding direction rear end side portion of the base material 1 are upwardly curved (the opposite side to the anode 21). 2〇. By this, the side of the conductive layer 12 disposed on the surface of the insulating layer U or the side opposite to the insulating layer u of the conductive layer 12 is not in contact with the electrolytic liquid liquid L. The conductive layer η is coated, etc. Therefore, the time taken for the electric forging process of the through hole 1U of the insulating layer 11 can be saved, and the plating can be performed efficiently. Further, in the present embodiment, the control unit is used. 27 Adjusting the current value flowing between each of the anodes 100102585 47 201139753 portion 211 and the cathode. In the present embodiment, the amount of current flowing between the anode portions 211 and the cathode is increased toward the substrate transport direction. The beacon hole U1 of the base material 1 has a tapered shape which is expanded from the opening side (the opening on the conductive layer side) toward the other opening side. Therefore, the inside of the through hole 111 is formed. The electroplating continues to progress and the area of the key is enlarged. Therefore, By controlling the control unit 27 so as to increase the amount of current flowing between the anode portion and the cathode toward the distal end side in the substrate transport direction, the current density on the surface to be bonded can be made substantially uniform. Further, in the present embodiment, the gap between the metal plates 2U of the anode η is reduced in the present embodiment (in the present embodiment, the through grooves (10) flow toward the substrate 1 side. Thereby, the electrolytic plating solution 1 can be stably flowed between the insulating layer 11 of the substrate ι and the anode 21. Further, in the present embodiment, in the direction perpendicular to the substrate transport direction of the anode 21, The position of the gap between the adjacent metal plates 211 (the through groove 262 in the present embodiment) is present at substantially the center of the width W2 of the substrate 1 so that the electrolytic money liquid L can be made from the through groove 262 to the substrate. The end portion side of the i (the end portion side in the substrate conveying direction) flows substantially uniformly, so that the plating can be stably performed. Further, in the present embodiment, the anode is inserted into the insulating support. Inside the member 26. Thereby, the substrate transport direction is adjacent Since the anode portions are insulated from each other, the current value flowing between the anode portions 211 and the cathodes can be a current value required for 100102585 48 201139753. Further, the present invention is not limited to the above-described embodiments, and the cost is attainable. For example, in the above embodiment, the anode 21 is constituted by a plurality of metal plates 211. However, the present invention is not limited thereto. For example, as shown in FIG. Alternatively, the anode 210 may be formed of a single metal plate 212. Thereby, the configuration of the plating apparatus can be simplified. In this case, the through hole 212A is formed in the metal plate 212, and the electrolytic plating solution L is supplied from the through hole 212 A to the substrate 1 The side can be. Further, in the above embodiment, the through hole lu has a cross-sectional tapered shape. However, the through hole lu is not limited thereto, and may have a shape in which one of the openings from the through hole 111 is uniform in diameter toward the other opening, and is, for example, a columnar shape. Furthermore, in the above-described embodiment, the current value flowing between the anode portion 211 and the cathode is set so as to become larger toward the distal end side in the substrate transport direction, but the present invention is not limited thereto. For example, when the thickness of the through hole is extremely large as compared with the opening diameter of the through hole, the metal ions in the plating solution hardly reach the inside of the through hole at the initial stage of plating. Therefore, in the case where the current density is high, there is a case where a void is formed on the plating film due to a gas such as hydrogen. Therefore, the current density is lowered at the initial stage of electroplating. When the plating film is formed in the vicinity of the opening of the through hole, the supply of the metal ions to the surface to be plated is smooth, so that the current density is increased to increase the plating speed. 100102585 49 201139753 It is also possible to control the current value flowing between each anode portion 211 and the cathode in accordance with the growth phase of the plating film. Further, in the above embodiment, the electrolytic plating solution L is ejected from the plating bath 24 toward the substrate 1. However, the present invention is not limited thereto. For example, the substrate may be transferred on the surface of the electrolytic lead L in the plating bath. In this case, it is preferable that the entire peripheral portion of the substrate 1 faces the opposite side of the electrolytic plating solution L, that is, the upper side. Further, in the above embodiment, the current value flowing between each anode portion 211 and the cathode is controlled, but it may not be controlled. Further, in the above embodiment, plating is performed inside the through hole 11, but the present invention is not limited thereto. For example, the conductive layer may be plated without forming a through hole in the insulating layer so that the surface of the conductive layer faces the anode 21 and the surface of the conductive layer (the surface opposite to the insulating layer) is brought into contact with the plating solution L. This application is based on and claims to be filed on January 26, 2010. This patent is intended to be patented 2010-014142 and on January 26, 2010, and it is proposed to apply for the application of this patent, 2010-014144 and June 2010. Priority is claimed on Japanese Patent Application No. 2010-133230, the entire disclosure of which is incorporated herein. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will become more apparent from Fig. 1 is a plan view showing an electrolytic plating apparatus according to a first embodiment of the present invention, 100102585 50 201139753. Figure 2 is a plan view of the π-ll direction of Figure 1. Figure 3 is a cross-sectional view taken along the line m-πι of Figure 1. Fig. 4 is a view showing a supporting member of the electrolytic plating apparatus. Figure 5 is a cross-sectional view showing a substrate. Fig. 6 is a plan view showing an electrolytic plating apparatus in a modified example of the present invention. Fig. 7 is a plan view showing an anode in a modified example of the present invention. Fig. 8 is a view showing an electrolytic plating apparatus in a modified example of the present invention. Fig. 9 is a view showing a main part of an electrolytic plating apparatus in a modified example of the present invention. Fig. 10 is a plan view showing an electrolytic money device according to a second embodiment of the present invention. Figure 11 is a cross-sectional view of the Π-ΙΙ direction of Figure 10. Figure 12 is a cross-sectional view taken along line ΙΙΙ-ΙΙΙ of Figure 10. Figure 13 is a view showing a supporting member of an electrolytic plating apparatus. Figure 14 is a cross-sectional view showing a substrate. Fig. 15 is a plan view showing an electrolytic ore apparatus according to a modification of the present invention. Figure 16 is a plan view showing an anode in the example of the present invention. Fig. 17 is a view showing the division of the electrolytic money device in the modification of the present invention. Fig. 18 is a plan view showing an electrolytic electroplating apparatus according to a third embodiment of the present invention, 100102585 51 201139753. Figure 19 is a cross-sectional view taken along line II-ΙΙ of Figure 18. Figure 20 is a cross-sectional view taken along the line III-III of Figure 18. Fig. 21 is a view showing a supporting member of the electrolytic plating apparatus. Figure 22 is a cross-sectional view showing a substrate. Figure 23 is a plan view showing an anode in a modified example of the present invention. Fig. 24 is a view showing a main part of an electrolytic plating apparatus in a modified example of the present invention. [Description of main components] 1 Substrate 2 Electrolytic plating apparatus 11 Insulation layer 12 Conductive layer 20, 210 Cathode 21 Anode 23 Electrolytic plating solution supply part 24 Plating tank 25 Transfer roller 26 Support member 27 Control part 28 Plate 29 Embargo 100102585 52 201139753 111, 212A, 281 through hole 201 holding portion 201A opposite surface 201B of holding portion 201C extending portion 202 of holding portion connecting portion 203 roller 211 > 212 metal plate (anode portion) 261 concave portion of metal plate 262 through groove conductive Distance between layer and metal plate L Electroplating solution Μ Pipe P Pump W1 Width of the anode W2 Width of the substrate W3 Width of the supporting member X Direction of transport of the substrate y Alignment with the direction of transport of the substrate 100102585 53