TW200942602A - Polishing composition - Google Patents

Polishing composition

Info

Publication number: TW200942602A
Authority: TW; Taiwan
Prior art keywords: group; carbon atoms; alkyl group; acids; polishing composition
Prior art date: 2007-11-14

Application number

TW097143929A

Other languages

English (en)

Other versions

TWI428437B (zh

Inventor

Takashi Sato

Hiroshi Takahashi

Yoshitomo Shimazu

Yuji Itoh

Original Assignee

Showa Denko Kk

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-11-14

Filing date

2008-11-13

Publication date

2009-10-16

2008-11-13 Application filed by Showa Denko Kk filed Critical Showa Denko Kk

2009-10-16 Publication of TW200942602A publication Critical patent/TW200942602A/zh

2014-03-01 Application granted granted Critical

2014-03-01 Publication of TWI428437B publication Critical patent/TWI428437B/zh

Links

238000005498 polishing Methods 0.000 title abstract 3
239000000203 mixture Substances 0.000 title abstract 2
125000004432 carbon atom Chemical group C* 0.000 abstract 5
125000000217 alkyl group Chemical group 0.000 abstract 4
LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 abstract 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
229910000881 Cu alloy Inorganic materials 0.000 abstract 1
-1 N-substituted imidazole Chemical class 0.000 abstract 1
239000002253 acid Substances 0.000 abstract 1
150000007513 acids Chemical class 0.000 abstract 1
150000001413 amino acids Chemical class 0.000 abstract 1
125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 abstract 1
150000001735 carboxylic acids Chemical class 0.000 abstract 1
229910052802 copper Inorganic materials 0.000 abstract 1
239000010949 copper Substances 0.000 abstract 1
235000014113 dietary fatty acids Nutrition 0.000 abstract 1
229930195729 fatty acid Natural products 0.000 abstract 1
239000000194 fatty acid Substances 0.000 abstract 1
150000004665 fatty acids Chemical class 0.000 abstract 1
150000007522 mineralic acids Chemical class 0.000 abstract 1
239000007800 oxidant agent Substances 0.000 abstract 1
125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Organic Chemistry (AREA)
Materials Engineering (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Mechanical Treatment Of Semiconductor (AREA)
Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

TW097143929A 2007-11-14 2008-11-13 研磨組成物 TWI428437B (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2007295708A JP2009123880A (ja)	2007-11-14	2007-11-14	研磨組成物

Publications (2)

Publication Number	Publication Date
TW200942602A true TW200942602A (en)	2009-10-16
TWI428437B TWI428437B (zh)	2014-03-01

Family

ID=40380260

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW097143929A TWI428437B (zh)	2007-11-14	2008-11-13	研磨組成物

Country Status (7)

Country	Link
US (1)	US8425276B2 (zh)
EP (1)	EP2209864A1 (zh)
JP (1)	JP2009123880A (zh)
KR (1)	KR101153685B1 (zh)
CN (1)	CN101855309B (zh)
TW (1)	TWI428437B (zh)
WO (1)	WO2009064010A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI650410B (zh) *	2013-06-07	2019-02-11	日商福吉米股份有限公司	矽晶圓硏磨用組成物

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Publication number	Priority date	Publication date	Assignee	Title
TW200945429A (en) *	2008-04-24	2009-11-01	Uwiz Technology Co Ltd	Composition of chemical mechanical polishing
CN101928520B (zh) *	2009-06-19	2014-03-12	盟智科技股份有限公司	用于平坦化金属层的研磨组成物
JP5493528B2 (ja) *	2009-07-15	2014-05-14	日立化成株式会社	Ｃｍｐ研磨液及びこのｃｍｐ研磨液を用いた研磨方法
JP5822356B2 (ja) *	2012-04-17	2015-11-24	花王株式会社	シリコンウェーハ用研磨液組成物
CN105802509B (zh) *	2014-12-29	2018-10-26	安集微电子（上海）有限公司	一种组合物在阻挡层抛光中的应用
JP6514578B2 (ja) *	2015-06-17	2019-05-15	東京応化工業株式会社	エッチング組成物及び伝導膜の製造方法
KR20200097966A (ko) *	2019-02-11	2020-08-20	삼성전자주식회사	연마 조성물 및 이를 사용한 반도체 소자 제조 방법

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US5575885A (en) *	1993-12-14	1996-11-19	Kabushiki Kaisha Toshiba	Copper-based metal polishing solution and method for manufacturing semiconductor device
US6217416B1 (en) *	1998-06-26	2001-04-17	Cabot Microelectronics Corporation	Chemical mechanical polishing slurry useful for copper/tantalum substrates
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US7410409B1 (en) *	1999-06-18	2008-08-12	Hitachi Chemical Co., Ltd.	Abrasive compound for CMP, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive compound
WO2001057919A1 (fr) *	2000-02-04	2001-08-09	Showa Denko K. K.	Composite de polissage destine a etre utilise dans la fabrication des circuits lsi, et procede de fabrication de circuits lsi
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JP2002249762A (ja)	2001-02-27	2002-09-06	Sanyo Chem Ind Ltd	研磨材用添加剤
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US6632259B2 (en) *	2001-05-18	2003-10-14	Rodel Holdings, Inc.	Chemical mechanical polishing compositions and methods relating thereto
SG144688A1 (en) *	2001-07-23	2008-08-28	Fujimi Inc	Polishing composition and polishing method employing it
US20050050803A1 (en) *	2001-10-31	2005-03-10	Jin Amanokura	Polishing fluid and polishing method
JP4449745B2 (ja)	2002-04-30	2010-04-14	日立化成工業株式会社	研磨液及び研磨方法
US7071105B2 (en)	2003-02-03	2006-07-04	Cabot Microelectronics Corporation	Method of polishing a silicon-containing dielectric
JP4667013B2 (ja) *	2003-11-14	2011-04-06	昭和電工株式会社	研磨組成物および研磨方法
TW200521217A (en) *	2003-11-14	2005-07-01	Showa Denko Kk	Polishing composition and polishing method
TWI288046B (en) *	2003-11-14	2007-10-11	Showa Denko Kk	Polishing composition and polishing method
JP2005340755A (ja) *	2003-11-14	2005-12-08	Showa Denko Kk	研磨組成物および研磨方法
US20050136670A1 (en) *	2003-12-19	2005-06-23	Ameen Joseph G.	Compositions and methods for controlled polishing of copper
US20060163083A1 (en)	2005-01-21	2006-07-27	International Business Machines Corporation	Method and composition for electro-chemical-mechanical polishing
KR100961116B1 (ko) *	2005-04-14	2010-06-07	쇼와 덴코 가부시키가이샤	연마 조성물
US20070049180A1 (en) *	2005-08-24	2007-03-01	Jsr Corporation	Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion, chemical mechanical polishing process, and process for producing semiconductor devices
EP1930938A4 (en) *	2005-09-09	2010-03-24	Asahi Glass Co Ltd	POLISHING AGENT, METHOD FOR POLISHING A POLISHED SURFACE AND METHOD FOR PRODUCING AN INTEGRATED SEMICONDUCTOR CIRCUIT ARRANGEMENT
JP2007088379A (ja) *	2005-09-26	2007-04-05	Fujifilm Corp	水系研磨液、及び、化学機械的研磨方法
TW200743666A (en) *	2006-05-19	2007-12-01	Hitachi Chemical Co Ltd	Chemical mechanical polishing slurry, CMP process and electronic device process
US20080067077A1 (en) *	2006-09-04	2008-03-20	Akira Kodera	Electrolytic liquid for electrolytic polishing and electrolytic polishing method
US8623236B2 (en) *	2007-07-13	2014-01-07	Tokyo Ohka Kogyo Co., Ltd.	Titanium nitride-stripping liquid, and method for stripping titanium nitride coating film
JP2009087967A (ja) *	2007-09-27	2009-04-23	Fujifilm Corp	金属用研磨液及び研磨方法
US8741008B2 (en) *	2008-02-18	2014-06-03	Jsr Corporation	Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method

2007
- 2007-11-14 JP JP2007295708A patent/JP2009123880A/ja active Pending
2008
- 2008-11-12 US US12/741,177 patent/US8425276B2/en not_active Expired - Fee Related
- 2008-11-12 KR KR1020107010335A patent/KR101153685B1/ko not_active IP Right Cessation
- 2008-11-12 WO PCT/JP2008/070967 patent/WO2009064010A1/en active Application Filing
- 2008-11-12 CN CN2008801156912A patent/CN101855309B/zh not_active Expired - Fee Related
- 2008-11-12 EP EP08850461A patent/EP2209864A1/en not_active Withdrawn
- 2008-11-13 TW TW097143929A patent/TWI428437B/zh not_active IP Right Cessation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI650410B (zh) *	2013-06-07	2019-02-11	日商福吉米股份有限公司	矽晶圓硏磨用組成物
US10745588B2 (en)	2013-06-07	2020-08-18	Fujimi Incorporated	Silicon wafer polishing composition

Also Published As

Publication number	Publication date
CN101855309A (zh)	2010-10-06
TWI428437B (zh)	2014-03-01
JP2009123880A (ja)	2009-06-04
WO2009064010A1 (en)	2009-05-22
US8425276B2 (en)	2013-04-23
KR20100067689A (ko)	2010-06-21
KR101153685B1 (ko)	2012-06-18
US20100267315A1 (en)	2010-10-21
CN101855309B (zh)	2013-06-12
EP2209864A1 (en)	2010-07-28

Legal Events

Date	Code	Title	Description
2017-12-01	MM4A	Annulment or lapse of patent due to non-payment of fees

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