TW200921816A - Method of making multi-layer package board of copper nuclear layer - Google Patents

Method of making multi-layer package board of copper nuclear layer Download PDF

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Publication number
TW200921816A
TW200921816A TW097102734A TW97102734A TW200921816A TW 200921816 A TW200921816 A TW 200921816A TW 097102734 A TW097102734 A TW 097102734A TW 97102734 A TW97102734 A TW 97102734A TW 200921816 A TW200921816 A TW 200921816A
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Taiwan
Prior art keywords
layer
substrate
copper core
forming
circuit
Prior art date
Application number
TW097102734A
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English (en)
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TWI348743B (zh
Inventor
Weng-Chiang Ling
jia-zhong Wang
zhen-zhong Chen
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Bridge Semiconductor Corp
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Publication of TW200921816A publication Critical patent/TW200921816A/zh
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Publication of TWI348743B publication Critical patent/TWI348743B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007—Surface contacts, e.g. bumps
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    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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200921816 九、發明說明： 【發明所屬之技術領域】 I發明係有關於—種銅核層多層封裝基板之製作 方法，尤指一種以銅核基板為基礎，開始製作之ζ、 • 多層封裝基板之製作方法。 【先前技術】 传由在：般2封裳基板之製作上’其製作方式通常 係由一核心基板開始，經 屬、塞孔及 板，之= 完成一雙面結構之内層核心 4再涇由一線路增層製程完成—多層封裝美 板。如第2 2圖所示，其係為 ：: 心基板60係由—：;：基板60’其中，該核 此芯層6 0 1 旱度之^層6 0 1及形成於 6…俜开ί::路層6〇2所構成，且該芯層 連接有複數個電鍍導通孔6 0 3，可藉以 接“層6 〇1表面之線路層6 0 2。 :第26圖所示，對該核心基板 表面形成先’係於該核心基板6〇 面並形成有複數個；=二該第—介電屠61表 02;之後，以^ 62’以露出該線路層6 層6 i外露之夺而、電電錢或電鍵等方式於該第一介電 6 3上形成一圖化成—晶種層6 3，並於該晶種層 κ 圖案化阻声β 曰6 4 ’且其圖案化阻層6 4 200921816 =複數個第二開口65，以露出部份欲形成圖案 化線路之晶種層η ?.妓益 二開口 65中二當 用電鍍之方式於該第 導雪丄Γ 圖案化線路層6 6及複數個 孔6 7，並使其第一圖案化線路層6 6得以透 =玄複數個導電盲孔6 7與該核心基板6 〇之線路層 2做電/·生導通’然後再進行移除該圖案化阻層6 與钱刻’待完成後係形成一第一線路增層結構6 a。 同樣地’該法係可於該第一線路增層結構6 a之最外 層表面再運用相同之方式形成—第二介電層6 8及一 第一圖案化線路層6 9之第二線路增層結構6 b，以逐 步增層方式形成-多層封裝基板。然而，此種製作方 法有佈線密度低、層數多及流程複雜等缺點。 另外，亦有利用厚銅金屬板當核心材料之方法， 可於經過钱刻及塞孔等方式完成一内層核心板後，再 經由一線路增層製程以完成一多層封裝基板。如第2 7圖〜第29圖所示’其係為另一有核層封裝基板之 剖面示意圖。首先’準備一核心基板7 〇，該核心基 板7 0係由一具預定厚度之金屬層利用姓刻與樹脂塞 孔701以及鑽孔與電鍍通孔7〇2等方式形成之單 層銅核心基板7 0 ;之後，利用上述線路增層方式， 於該核心基板7 0表面形成一第一介電層7丄及一第 一圖案化線路層7 2，藉此構成一具第一線路增層結 構7 a。該法亦與上述方法相同，係可再利用一次線路 6 200921816 :層：式於該第一線路増層結構7a之最外層表面形 、一 μ電層73及一第二圖案化線路層， 此構成4第二線路增層結構7b，以逐步增層方式开, 板。然而’此種製作方法不僅其銅核 土反t作不易’ a亦與上述方法相同，具有佈線密 度低及流料料m—般習用者係無法符合 使用者於實際使用時之所需。 【發明内容】 本發月之主要目的係在於，使用本發明具高密户 之增^線路封裝基板方法所製造之多層封裝基板，ς 可依貫際需求形成具銅核基板支狀銅核層多層封襄 基，並可有效達到改善超薄核層基板板彎翹問題、 及簡化傳統增層線路㈣作流程，進而達到提高封 (Board Level Reliability) ^ 目的。 本發明之次要目的係在於，從銅核基板為基礎， 開始製作之單面、多層封裝基板，其結構係包括一具 向剛性支#之厚銅板，且此厚銅板之—面係具增層線 路，另一面則具球側圖案阻障層，於其中，各拎層 路及置晶側與球側連接之方式係以複數個電錢盲、曰埋 孔所導通。 本發明之另一目的係在於，具有高密度增層線路 以提供電子元件相連時所需之繞線，同時，並以厚銅 200921816 板提供足夠之剛性使封裝製裎可更為簡易。 絲上之目的’本發9種銅核層多層封裝 :及俗法，係於一銅核基板之第-面以光學微 影及蝕刻之方式形成複數個第—九子微 腳之-部分。並以此複數接腳之/ 硬數接 路之電性連接墊。之後於複數 ϋ增層線 電鍍盲孔以連接至少一增層線路=在:== 晶側形成電性接塾；而該銅核基板之第二面貝= 側圖案阻障層以作為封穿泣— 、 ’ 所裝元成後移除該銅核基板 斤^成之柱^電性接腳接墊。其中，雖然各線路在封 成前於電性上係完全短路’但封裝製程完成 後則可利用球側圖案阻障層，以姓刻之方式移除部份 之厚銅板’進而可使電性獨立並形成具保護作用 狀接腳。 :實施方式】 -立胡參閱『第1圖』戶斤示，係為本發明之製作流程 丁心圖。如圖所示：本發明係一種鋼核層多層封裝基 板之製作方法，其至少包括下列步驟： (Α )提供銅核基板1 1 ··提供一銅核基板； (Β )形成第一、二阻層及第一開口 1 2 :分別 於。亥銅核基板之第一面上形成一第一阻層，以及於該 銅核基板之第二面上形成一完全覆蓋狀之第二阻層， 200921816 於其中，並以曝光及顯影之方式在該， 複數個第一開口； 阻層上形成 (c)形成第一槽. 個第一開口下方形成複數。二:之方式於複數 (D )移除第—、一 除該第-阻層及該第二阻層;θ .以剝離之方式移 (β )形成第一電性阻絕層1 印刷之方式於複數個g .直接壓合或 層； 個第-凹槽内形成-第-電性阻絕 (F)形成第—介電層及第一金 銅核基板之第一面盥哕第 16.於忒 第-介電層及一第電：阻絕層上直接塵合- -介電層後，再形成J金::係先採取貼合該第 電層係可與該第4; 二其中，該第一介 方式形成；電性阻絕層同時進行壓合或印刷之 該第成第二開口17:以雷射鑽孔之方式於 j "顧士曰與該第一介電層上形成複數個第二開 :開：ΐ:分之鋼核基板第-面，其中，複數個第 ::::可先做開鋼窗（conforma (laser Π· > ^成，亦或係以直接雷射鑽孔 (LASER Dlrect)之方式形成； 9 200921816 Η)形成第二金屬層18:以無電電鍍或電鍍 ::複數個第二開口中及該第—金屬層上形成一 罘一金屬層； 科^ )形成第三、四阻層及第三開口 1 9 :分別 板之坌··金屬層上形成一第二阻層，以及於該銅核基 第二面上形成一完全覆蓋狀之第四阻層，於其 個μ 曝光及顯影之方式在該第三阻層上形成複數 弟二開口； ，望J )形成第一線路層2 0 :以蝕刻之方式移除 ^二開口下方之第二金屬層及第—金屬層，並形成 一第一線路層； (K)完成具有銅核基板支撐並具電性連接之 :a層線路基板2 1 :以剝離之方式移除該第三阻層 =四阻！。至此’完成一具有銅核基板支撐並具 碑、接之早層增層線路基板，並可選擇直接進行步 鄉（L )或步驟（Μ); „ 、（ L )進行置晶側與球側線路層製作2 2 ··於該 :層增層線路基板上進行—置晶側與球側線路層之製 護用在該第一線路層表面塗覆一層具絕緣保 。用之防焊層，並以曝歧顯影之方式在該第一 :焊層上形成複數個第四開口，以顯露該第一線靜 作為電性連接墊之部分，接著於該銅核基板之第二^ 上形成-第五阻層，並且在該第五阻層上係形成複數 200921816 個第五開口，之後再分別於複數個第四開口中形成— 第^障層，以及於第五開口中形成一第二阻障層， 最後以剝離之方式移除該第五阻層。至此，完成:完 正圖案化之置晶側線路層與已圖案化但仍完全電性短 路之球側線路層，μ，該第―、三轉層係可為電 鍍鎳金、無電鍍鎳金、電鍍銀或電鍍錫中擇其一；以 及 (Μ)進行線路增層結構製作2 3 :於該單層增 層線路基板上進行一線路增層結構之製作，於其中f 在該第-線路層與該第—介電層表面形成—第二介電 層’並以雷射鑽孔之方式在該第二介電層上形成複數 個第六開口 ’以顯露部分之第—線路層，接著以I電 電鍍或電鍍之方式於該第二介電層與複數個第六開口 表面形成一第一晶種層，再分別於該第一晶種層上形 成一第六阻層，以及於該銅核基板之第二面上开\成二 完全覆蓋狀之第七阻層’並利用曝光及顯影之方式於 該第六阻層上形成複數個第七開口，以顯露部分之第 一晶種層，之後再以無電電鍍或電鍍之方式於哼第七 開口中已顯露之第一晶種層上形成一第三金屬層'最 後以剝離之方式移除該第六阻層與該第七阻層，並以 蝕刻之方式移除該第一晶種層，以在該第二^電層上 形成-第二線路層。至此’又再增加—層線路增；結 構，完成一具有銅核基板支撐並具電性連接之雙層增 200921816 層線路基板。並可繼續本步驟（Μ)增加線路增層結 構，形成具更多層之封裝基板，亦或直接至該步驟（L ) 進行置晶側與球側線路層製作，其中，複數個第六開 口係可先做開銅窗後，再經由雷射鑽孔之方式形成， 亦或係以直接雷射鑽孔之方式形成。 於其中，上述該第---1阻層係以貼合、印刷或 旋轉塗佈所為之乾膜或溼膜之高感光性光阻；該第一 電性阻絕層及該第一、二介電層係可為防焊綠漆、環 氧树脂絕緣膜（Ajinomoto Build-up Film，ABF)、苯環 丁烯（Benzocyclo-buthene，BCB)、雙馬來亞醯胺 _三 亂雜本樹脂（BismaleimideTriazine，BT)、環氧樹脂板 (FR4、FR5 )、聚醢亞胺（p〇iyimide，PI)、聚四氟乙 稀（Poly(tetfa-fl〇roethylene)，PTFE)或環氧樹脂及玻 璃纖維所組成之一者。 請參閱『第2圖〜第2 1圖』所示，係分別為本 發明一實施例之多層封裝基板（一）剖面剖面示意圖、 本發明一實施例之多層封裝基板（二）剖面示意圖、 本發明一實施例之多層封裝基板（三）剖面示意圖、 本發明一實施例之多層封裝基板（四）剖面示意圖、 本發明一實施例之多層封裝基板（五）剖面示意圖、 本發明一實施例之多層封裝基板（六）剖面示意圖、 本發明一實施例之多層封裝基板（七）剖面示意圖、 本發明一實施例之多層封裝基板（八）剖面示意圖、 12 200921816 本發明一實施例之多層封裝基板（九）剖面示意圖、 本發明一實施例之多層封裝基板（十）剖面示意圖、 本發明一實施例之多層封裝基板（十一）剖面示意圖、 本發明一實施例之多層封裝基板（十二）剖面示意圖、 本發明一實施例之多層封裝基板（十三）剖面示意圖、 本發明一實施例之多層封裝基板（十四）剖面示意圖、 本發明一實施例之多層封裝基板（十五）剖面示意圖、 本發明一實施例之多層封裝基板（十六）剖面示意圖、 本發明一實施例之多層封裝基板（十七）剖面示意圖、 本發明一實施例之多層封裝基板（十八）剖面示意圖、 本發明一實施例之多層封裝基板（十九）剖面示意圖、 及本發明一實施例之多層封裝基板（二十）剖面示意 圖。如圖所示：本發明於一較佳實施例中，係先提供 一銅核基板3 0，並分別於該銅核基板3 〇之第一 了 二面上各自貼合一高感光性高分子材料之第一、二阻 層31、32，並以曝光及顯影之方式在該第一： 31上形成複數個第1 口 33，以顯露其下曰 基板30第一δ，而其第二面上之第二阻層3二 几全覆盍狀。之後，再錢刻之方式製作 、為 以形成具有接腳第 阻絕層3 其中，該銅核基板3 Q係為-不合介凹匕’ f、二阻層31'32係為=層之厚鋼 接著’移除該第一、二阻層 面之銅核基板30。之後印刷一第一電性 13 200921816 4於該凹槽中，並在該銅核基板3 〇之第一面上壓合 一第一介電層3 5及一第一金屬層3 6，再以雷射鑽 孔之方式於該第一金屬層3 6與該第一介電層3 5上 形成複數個第二開口 3 7，之後以無電電鍍或電鍍之 方式於複數個第二開口 3 7及該第一金屬層3 6表面 形成一第二金屬層38，其中，該第一、二金屬層3 6、3 8皆為銅’且該第二金屬層3 8係作為與該銅 核基板3 0第一面之電性連接用。 刀别於該第二金屬層3 8上貼合一 =子材料之第三阻層39’以及於該銅核基= 二第二面上貼合一高感光性高分子材料之第四阻層 4 0。並以曝光及顯影之方式於該第三阻们 第三開口41，以顯露其下之第二金屬们 後係以_之方式移除該第三開 —、二金屬層，以拟+ 咕 Γ ^ ^ 除該第三、_==路層…最後並移 與該銅核基板3 0之接腳第線路並 基板3。 運接之早層增層線路 增層結LG發實施例中，係先行進行線路 電層上線路層”與第一介 電層43 ’之後1雷射:孔膜f:之第二介 43上形成複數個第四 ^於°亥第一介電層 ^ 以顯露其下之第一 200921816 線路層4 2，並在該第二介電層4 3及該第四開口‘ 4表面以無電電鍍或讀之方式形成-第-晶種層4 5。之後分別於該第-晶種層4 5上貼合—高感光性 高分^材料之第五阻層46，以及於該銅核基板3〇 之第面上貼s j^感光性高分子材料之第六阻層4 7，接著利用曝光及顯影之方式於該第五阻層46上 形成複數個第五開口 4 8，然後再於複數個第五開口 48中無電電鍍或電鍍—第三金屬層4g，最後移除 該第五、六阻層’並再以㈣之方式移除該第一晶種 層，以形成—第二線路層5 0。至此，又再增加一層 之線路增層結構，完成—具有銅核基板切並呈電^ 連接之雙層增層線路基板4，於其中，該第一晶種層 與5玄第二金屬層皆為金屬銅。 之後，係進行置晶側與球側線路層之製作。首先 於》玄第—線路層5 Q表面塗覆—層絕緣保護用之第一 防焊層5 1，然後並以曝光及顯影之方式於該第一防 焊層5 1上形成複數個第六開σ 5 2，以顯露線路增 ^结構作為電性連接墊。接著，於該銅核基板3 〇之 第二面上貝占合一高感光性高分子材才斗之第七阻層5 3，並以曝光及顯影之方式於該第七阻層上^成 複數個第七開口 5 4 ’再分別於複數個第六開口 上形成一第一阻障層5 5 ’以及於複數個第七開口 5 4上形成-第二阻障層56，最後，移除該第七阻層。 15 200921816 至此’完成—具銅核層支撐之多層封裝基板5，其中， 該第一、二阻障層5 5、5 6皆為鎳金層。 ,由^述可知，本發明係從銅核基板為基礎，開始 製作^單面、多層封裝基板，其結構係包括一具高剛 性支撑之厚銅板，且此厚銅板之—面係具增層線路， 另面則具球側圖案阻障層。於其中，各增層線路及 =晶側與球側連接之方式係以複數個電鍍盲、埋孔所 V通因此，本發明封裝基板之特色係在於具有高密 度增層線路以接JJL - /J. I .. 、 杈仏電子疋件相連時所需之繞線，同 時，並以厚銅板提供足夠之剛性使封裝製程可更為簡 易Λ、《'各線路在封裝製程完成前於電性上係完全短 路彳一封裝製私完成後則可利用球侧圖案阻障層，以 似I之方式移除部份之厚銅板，進而可使電性獨立並 二成八保。f作用之柱狀接腳。藉此，使用本發明具高 在度之i曰層、線路封裝基板方法所製造之多層封裝基 板’係可依實際需求形成具銅核基板支撐之銅核層多 層f裝基二’並可有效達到改善超薄核層基板板彎翹 問題、及簡化傳統增層線路板製作流程，it而達到提 高封裝體接合其k niL > ^ 基板時之可靠度（Board Level Reliability )之目的。 “上所述’本發明係—種銅核層多層封裝基板之 :法可有效改善習用之種種缺點’具有高密度 增層線路以提供電子元件相連時所需之繞線，同時， 16 200921816 f以厚銅板提供足夠之剛性使封裝製程可更為簡易。 藉此’使用本發明所製造之多層封裝基板，係可依實 際需求形成具銅核基板支樓之銅核層多層封裝基板， 並可有效達到改善超薄核層基板板·彎起問題、及簡化 傳統增層線路板製作流程，以達到提高封裝體接合基 板時之可靠度（Board Level ReliabiHty)之目的，進 而使本明之産生能更進步、更實用、更符合使用者 請確已符合發明專利申請之要件，羞依法提出 惟以上所述者，僅為本發明之較佳實施例而已， 以此限定本發明實施之範圍；&，凡依本發明 2 = _及發明說明書内容所作之簡單的等效變 與修飾’皆應仍屬本發明專利涵蓋之範圍内。 200921816 【圖式簡單說明】 第1 圖’係本發明之製作流程示意圖。 苐2圖，係本發明一實施例之多層封裝基板（一）剖 面示意圖 3圖，係本發明一實施例之多層封裝基板（二）剖 面示意圖。 圖，係本發明一實施例之多層封裝基板（三）剖 面示意圖。 5圖，係本發明一實施例之多層封裝基板（四）剖 面示意圖。 b圖’係本發明一實施例之多層封裝基板（五）剖 面示意圖。 苐7園 圖’係本發明一實施例之多層封裝基板（六）剖 面示意圖。 «圖’係本發明一實施例之多層封裝基板（七）剖 面示意圖。
第Q y圖’係本發明一實施例之多層封裝基板（八）剖 面示意圖。 第1 π 丄^圖’係本發明一實施例之多層封裝基板（九） 剖面示意圖。 第 1 丄1圖’係本發明一實施例之多層封裝基板（十） 剖面示意圖。 200921816 第1 2圖，係本發明—實施例之多層封裝基板（十一） 剖面示意圖。 第1 3圖’係本發明一實施例之多層封裝基板（十二） 剖面示意圖。 第1 4圖，係本發明一實施例之多層封裝基板（十三） 剖面示意圖。 第1 5圖，係本發明一實施例之多層封裝基板（十四） 剖面示意圖。 第1 6圖’係本發明—實施例之多層封裝基板（十五） 剖面示意圖。 第1 7圖’係本發明一實施例之多層封裝基板（十六） 剖面示意圖。 第1 8圖’係本發明—實施例之多層封裝基板（十七） 剖面示意圖。 第1 9圖’係本發明—實施例之多層封裝基板（十八） 剖面示意圖。 第2 0圖’係本發明〜實施例之多層封裝基板（十九） 剖面示意圖。 第2 1圖’係本發明〜實施例之多層封裝基板（二十） 刮面示意圖。 第2 2圖’係習用有核層封裝基板之剖面示意圖。 第2 3圖，係習用實施線路增層（一）剖面示意圖。 200921816 第2 4圖，係習用實施線路增層（二）剖面示意圖。 第2 5圖’係習用實施線路增層（三）剖面示意圖。 第2 6圖，係習用之實施線路增層（四）剖面示意圖。 第2 7圖’係另H有核層封裝基板之剖面示意圖。 第28圖’係另一習用之第-線路增層結構剖面示意 圖。 第2 9圖，係另一 【主要元件符號說明】 (本發明部分） 白用之第二路增層結構剖面示意圖。 步驟（A)〜（Μ) li〜2 單層增層線路基板3 銅核基板3 0 第一、二阻層3 1、32 第一開口 3 3 第一電性阻絕層3 4 第一介電層3 5 第一金屬層3 6 第二開口 3 7 第二金屬層3 8 第三、四阻層39、4〇 雙層增層線路基板4 20 200921816 第三開口 4 1 第一線路層4 2 第二介電層4 3 第四開口 4 4 第一晶種層4 5 第五、六阻層46、47 第五開口 4 8 第三金屬層4 9 第二線路層5 0 第一防焊層5 1 第六開口 5 2 第七阻層5 3 第七開口 5 4 第一、二阻障層55、56 (習用部分） 第一、二線路增層結構6 a、6 核心.基板6 0 芯層6 0 1 線路層6 0 2 電鍍導通孔6 0 3 200921816 第一介電層6 1 第一開口 6 2 該晶種層6 3 圖案化阻層6 4 第二開口 6 5 第一圖案化線路層6 6 導電盲孔6 7 第二介電層6 8 第二圖案化線路層6 9 二線路增層結構7 a、7 核心基板7 0 樹脂塞孔7 0 1 電鍍通孔7 0 2 第一介電層7 1 第一圖案化線路層7 2 第二介電層7 3 第二圖案化線路層7 4

Claims (1)

  1. 200921816 十、申請專利範圍： 1 · 一種銅核層多層封裝基板之製作方法，係至少包含 下列步驟： (A)提供一銅核基板； (B )分別於該銅核基板之第—面上形成一第 一阻層，以及於該銅核基板之第二面上形成一完全 覆蓋狀之第二阻層，於其中’該第-阻層上並形成 複數個第一開口； (C )於複數個第-開口下方形成複數個第一 凹槽； (D )移除該第一阻層及該第二阻層； (E )於複數個第一凹槽内报 曰円形成一第一電性阻 絕層； 絕層上形成一第一介電層及一第—金屬層； (G)於該第-金屬層與該第—介電層 複數個第二開口’並顯露部分之鋼核基板第一面； (Η)於複數個第二開口中 τ次邊弟一金屬層 形成一第二金屬層； (I )分別於該第二今屬品L 1屬層上形成一第三阻 層，以及於忒銅核基板之第二面 上升7成一元全覆蓋 23 200921816 狀之第四阻層’於其中’該第三阻層上並形成複數 個第三開口； (J )移除該第三開口下方之第二金屬層及第 一金屬層，並形成一第一線路層； (κ)移除該第三阻層及該第四阻層。至此， 完成一具有銅核基板支撐並具電性連接之單層增 層線路基板，並可㈣直接進行㈣（L )或^ 、以早層增層線路基板上進行一置晶側 與球側線路層製作，於其中，在該第一線路層表面 形成-第-防悍層，並且在該第—防焊層上係形成 複數個第四開口，以顯露該第一線路層作為電性連 接墊之部分，接著於該銅核基板之第二面上形成— 第五阻層’並且在該第五阻層上係形成複數個第五 開口，之後再分別於複數個第四間口 阻障層’以及於第五開口中形成-第二阻障層，最 後移除該第五阻層；以及 (Μ)於該單層增層線路基板上進行一 作’於其中，在該第-線路層表面形成二 第二並ΐ在該第二介電層上係形成複數個 以顯路部分之第一線路層，接 :介電層與複數個第六開口表面形成一第」 曰，再分別於該第-晶種層上形成—第六阻層，曰以 24 200921816 及於該銅核基板之第二面上形成一完全覆蓋狀之 第七阻層’並於該第六阻層上形成複數個第七開 口 ’以顯露部分之第一晶種層，之後於該第七開口 中已顯露之第一晶種層上形成一第三金屬層，最後 移除該第六阻層、該第七阻層及該第一晶種層，以 在為第二介電層上形成一第二線路層。至此，完成 一具有銅核基板支撐並具電性連接之雙層增層線 路基板。並可繼續本步驟（Μ )增加線路增層結構， 形成具更多層之封裝基板，亦或直接至該步驟（乙） 進行置晶側與球側線路層製作。 層材料之銅板。 2 ·依據申請專利範圍第i項所述之銅核層多層封裝基 板之製作方法，其中，該銅核基板係為—不含介電 3 ·依據中請專利範圍第1項所述之難層多層封裝基
    七阻層係以貼合、 邑膜之南感光性光 之銅核層多層封裝基 第一、三、五及七開 項所述之銅核層多層封裝基 5亥步驟（C )形成複數個第 移除該第一、二金屬層及該 25 200921816 ，驟（Μ)移除遠第一晶種層之方法係可為姓刻。 6依據申請專利範圍帛1項所述之銅核層多層封裝基 板之‘作方法，其中，該第一〜七阻層之移除方法 係可為剝離。 7 .依據申請專利範圍第1項所述之銅核層多層封裝基 板之製作方法，其中，該第一電性阻絕層係以直接 壓合或印刷之方式形成。 8 .依據申請專利範圍第1項所述之銅核層多層封裝基 板之製作方法，其中’該第一電性阻絕層及該第一、 二介電層係可為防焊綠漆、環氧樹脂絕緣膜 (Ajinomoto Build-up Film, ABF )、苯環丁烯 (Benzocycl〇-buthene，BCB)、雙馬來亞醯胺·三氮 雜本Μ 脂（BismaleimideTriazine，BT)、環氧樹脂 板（FR4、FR5)、聚醯亞胺（p〇lyimide, PI)、聚 四氟乙稀（P〇ly(tetra-floroethylene), PTFE)或環氧 樹脂及玻璃纖維所組成之一者。 9 ·依據申請專利範圍第1項所述之銅核層多層封裝基 板之製作方法，其中，該步驟（E )第一電性阻絕 層係可與步驟（F )第一介電層同時進行壓合或印 刷之方式形成。 1 0 ·依據申請專利範圍第1項所述之銅核層多層封裝 基板之製作方法，其中，該步驟（F )係以直接壓 26 200921816 :=介:層及該第—金屬層於其上’或係採取 貼“亥第—介電層後’再形成該第一金屬層。 1且依射請專利範㈣i項所述之銅核層多層 :板之製：方法’其十’複數個第二、六開口係ΐ :::: (c〇nf〇rmal Mask)後，再經由雷射鑽 2美：二：明專利範圍第1項所述之銅核層多層封妒 紐之製作方法，其中，該第二、三金屬層； 〜種層之形成方式係可為無電電鑛或電錢。 A板=%專利範11第1項所述之銅核層多層封# 基板之製作方法，a 裝 電鍍錄金、4電㈣今/ 二_層係可為 ，、電鍍鎳金、電鍍銀或電鍍錫中擇其—。 27
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