TW200828580A - Solid-state imaging device - Google Patents
Solid-state imaging device Download PDFInfo
- Publication number
- TW200828580A TW200828580A TW096139885A TW96139885A TW200828580A TW 200828580 A TW200828580 A TW 200828580A TW 096139885 A TW096139885 A TW 096139885A TW 96139885 A TW96139885 A TW 96139885A TW 200828580 A TW200828580 A TW 200828580A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode pad
- solid
- semiconductor substrate
- imaging device
- state imaging
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 230000001681 protective effect Effects 0.000 claims abstract description 39
- 239000000565 sealant Substances 0.000 claims abstract description 39
- 238000007689 inspection Methods 0.000 claims description 30
- 238000007789 sealing Methods 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 abstract description 19
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 14
- 239000010410 layer Substances 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 239000011241 protective layer Substances 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000003405 preventing effect Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02372—Disposition of the redistribution layers connecting to a via connection in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05541—Structure
- H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13021—Disposition the bump connector being disposed in a recess of the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0494—4th Group
- H01L2924/04941—TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0504—14th Group
- H01L2924/05042—Si3N4
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
200828580 九、發明說明: 【發明所屬之技術領域】 本發明係關於__種㈣攝像裝置,特別是關於—種設在 半導體基板表面之電極塾上具有自半導體基板背面以貫通 半導體基板之狀態連接之背面佈線之固體攝像裝置。 【先前技術】 作為光感測器裝置之小型化,攄韶J^古 J ^10 像叛告有一種固體攝像裝 置,其藉由密封劑將透明基板貼合在晶片尺寸之半導體基 板之攝像區域面之周緣部,將從半導體基板背面抵達設於 攝像區域面周緣之電極墊(銲墊)狀態之貫通孔(thr〇ugh hole)開口,形成在該貫通孔上填充有導電材料之背面佈 線。上述固體攝像裝置在晶圓狀態下貼合透明基板,形成 上述背面佈線後,藉由單片化,以晶片尺寸封裝化(例如 參照專利文獻1、非專利文獻1)。 於此,採用圖8説明上述先前之固體攝像裝置之一例。 該圖所示之固體攝像裝置10將透明基板22經由密封劑21接 著在半導體基板11上,該半導體基板11於表面製作有排列 著光感測器之攝像區域S和自該攝像區域s引出之電極塾 12 〇 上述攝像區域S設於半導體基板11表面中央部。又,在 半導體基板11上設有例如由氧化矽(Si〇2)構成之絕緣膜 13,上述電極墊12設於半導體基板丨丨周緣之上述絕緣膜13 上。該電極墊12由數百nm左右膜厚之鋁(A1)薄膜構成。 在上述之半導體基板11及絕緣膜13上設有從上述電極塾 123217.doc 200828580 12抵達半導體基板11之背面11&之貫通孔I#,以覆蓋該貫 通孔14側壁之狀態,在半導體基板11之背面1^設有絕緣 膜15。又,在設有絕緣膜15之貫通孔14上,以覆蓋該貫通 孔14之内壁之狀態,在半導體基板丨丨之背面設有由數十# m膜厚之銅(Ci〇膜構成之背面佈線16。 並且,在埋入上述貫通孔14之狀態下,在背面佈線16上 及絕緣膜1 5上’設有背面保護樹脂1 7,設有抵達背面佈線 16狀態之開口部17a,在自該開口部17a露出之背面佈線16 之表面設有作為外部連接端子之凸塊丨8。 另一方面,上述密封劑21由具有接著性之有機類絕緣材 料構成’在半導體基板11之設有電極墊12一側,以數十# m膜厚塗佈形成。又,經由該密封劑21接著有由玻璃基板 構成之透明基板22。 [專利文獻1]日本特開2005-202 101號公報 [非專利文獻 1]ASET:SEMI F0rum japail 2005 預稿集, P.46(JISSO研討會2005年6月7曰SEMI日本企劃) 【發明内容】 [發明欲解決之技術問題] 然而,如圖9所示,在如上述之固體攝像裝置1〇中,由 數百nm之鋁(A1)薄膜構成之電極墊丨2在接觸數十膜厚之 密封劑21和背面佈線16之狀態被挾持,一般而言,由於密 封刎21之玻璃轉移溫度(丁g)低,故藉由形成凸塊18時之焊 錫回抓或形成背面佈線16時之熱步驟,在背面佈線16熱膨 脹時,密封劑2丨會流動,應力會向電極墊12上集中。由'於 123217.doc 200828580 應力向該電極墊12集中,在與構成背面佈線16之金屬材料 線膨脹係數相差2位數程度之周邊絕緣膜13上產生破裂
Di ’在饴封劑2 1之材料塑性變形之情形下,會由於在貫通 孔14之底部產生剝離〇2而斷線。 因此,本發明之目的在於提供一種固體攝像裝置,其可 防止因應力向電極墊集中而產生斷線等損害。 [解決問題之技術手段] 為達成上述目的,本發明之第丨固體攝像裝置具備:半 導體基板,其係在表面具備排列有光感測器之攝像區域和 設在該攝像區域周緣之電極塾;透明基板,其係經由密封 劑接合在半導體基板之表面;及背面佈線,其係以貫通半 導體基板之狀態自電極塾抵達半導體基板之背面;其特徵 在於:於半導體基板與密封劑之間,在至少覆蓋電極塾之 狀態下設有由無機類絕緣材料構成之保護膜。 r據士此之第1固體攝像裝置’由於在電極墊與密封劑 i 之間佈置有由無機類絕緣材料構成之保護膜,故可防止電 極墊在密封劑與背面佈 仰琛之間於接觸狀態下被挾持。又, 無機類絕緣材料一船齡i1 乂以有機類絕緣材料形成之密封劑 硬。藉此,在伴隨熱處理之 衣W製私中,即使產生背面佈 線之熱膨脹,由於電極墊為 马上述保濩膜所覆蓋,故亦可緩 和應力向電極墊集中。拉^ 、、 ^ ’可防止因應力向電極墊隼中 而導致電極墊與背面佈線 一 之損宝。 、旬離,可防止對固體攝像裝置 又,本發明之第2固體摄 ㈣像裝置具備:半導體基板,其 123217.doc 200828580 係在表面具備排列有光感測器之攝 域周緣之電極塾;透明基板,其係經 i酋诚* 1 ^ 街山封劑接合在該半 ¥體基板之表面;及背面佈線’其細貫通半導體 狀態自電極墊抵達半導體基板之背面,· _ 土 ,,,^ '、符被在於··電極 墊以較構成背面佈線之佈線材料之成 戚厚更厚之膜厚設 置0
之剝離,可防止對固體攝像裝置之損害。 [發明效果] =如此之第2固體_裝置’由於電極塾以較構成背 面佈線之佈線材料之成膜膜厚更厚之膜厚設置,故電極墊 在密封劑與背面佈線之間於接觸狀態下被挾持,在:隨敎 處理之製造製程中’即使產生因背面佈線之熱膨脹而使應 力向電極墊集中’ Ή夠緩和應力集中所造成之影響。藉 此,可防止因應力向電極墊集中而導致電極墊與背面佈2 如上所述,依據本發明之固體攝像裝置,由於可防止製 造製程中之熱處理對固體攝像裝置造成之損害,故可提高 固體攝像裝置之可靠度和良率。 【實施方式】 以下詳細説明本發明之實施形態。 (第1實施形態) 圖1(a)係顯示作為本發明之實施形態例之固體攝像裝置 之剖面圖,圖1(b)係(a)之區域Α之放大剖面圖。再者,在 與先前技術相同之構成附上相同符號加以説明。 該圖所示之固體攝像裝置1係將透明基板22經由密封劑 123217.doc 200828580 2 1接著在表面製作有排列著光感測器之攝像區域s和自該 攝像區域S引出之電極墊12之半導體基板丨i。
上述攝像區域S設於例如由矽基板構成之半導體基板j j 表面中央部,排列形成之光感測器可為CCD型,亦可為 MOS型。在半導體基板u上設有例如由氧化矽(“ο〗)構成 之絕緣膜13,上述電極墊12設於半導體基板^周緣之上述 絕緣膜13上。該電極墊12由數百nm左右膜厚之例如鋁(ai) 薄膜構成。於此,作為電極墊12之構成材料,除上述之鋁 (A1)外,可使用銅(Cu)、金(Au)、銀。再者,於此省 略圖示,但在電極墊12之下層側設有防止導電材料自電極 墊12向絕緣膜13擴散之鈦(Ti)/氮化鈦(Tm)或者鈕(丁^氮 化组(TaN)等障壁層。 又,在上述半導體基板u及絕緣膜13上設有從上述電極 墊12抵達半導體基板丨丨之背面Ua之貫通孔丨々。貫通孔“ 之直徑小於電極墊12之直徑,在貫通孔14之側壁及半導體 基板11之背面11a全域,以數卜㈤膜厚設有例如由氧化矽 (Si〇2)構成之絕緣膜15。又,在設有絕緣膜丨纟之貫通孔μ 上,以覆蓋貫通孔14之内壁之狀態,在絕緣膜15上經由具 有防銅擴散性能之例如由Ti/TiN構成之障壁層(省略圖 示),設有由數十//m膜厚之銅(Cu)膜構成之背面佈線Μ。 然後,以埋入上述貫通孔14之狀態,在背面佈線Μ上及 絕緣膜1 5上設有背面保護樹脂丨7。又,在 仕4月面保護樹脂 17上設有抵達背面佈線16狀態之開口部17&, 仕目该開口 部17a露出之背面佈線16之表面設有作為外部連接端子之 123217.doc -10- 200828580 凸塊1 8。 再者,於此係説明以覆蓋貫通孔丨4之内壁之狀熊設置上 述背面佈線16之例,但背面佈線16之形狀並不特別限定, 亦可在埋入上述貫通孔14之狀態下設置。
於此’作為本發明之特徵性構成,在半導體基㈣與密 封劑21之間,以至少覆蓋上述電極墊12之狀態設有由無機 類絕緣材料構成之保護膜31。藉此,可防止電極墊I]在密 封劑21與背面佈線16之間於接觸狀態下被挾持。又,由於 由無機類絕緣材料構成之保護膜31一般較由有機類絕緣材 料形成之密封劑21更硬,故能夠緩和例如藉由形成背面佈 線16或f面保護樹脂17時之熱處理所導致之背面佈線^之 熱膨脹而使應力向電極墊12集中。 於此,作為構成保護膜31之無機類絕緣材料,較好的是 採用光學上透明之絕緣材料,使用氧化邦叫)或氮化石^ ⑽),單層膜或積層膜均可。於此’作為保護膜3卜例 如採用氮化矽(SiN)膜。 再者,於此係説明保護膜31以覆蓋電極墊12之狀態設置 於絕緣膜15上之全域之例,但保護膜仙至少覆蓋電極塾 12之狀態設置即可,亦可形成圖案。 再者-方面,密封劑21以至少覆蓋半導體基㈣周緣上 之上述保護膜31之狀態設置。於此,密封㈣例如以覆蓋 上述保護膜上之全域之狀態設置。該情形下,作為密封 齊⑺,例如採用具有接著性之光學上透明之有機類絕緣材 ;斗在保。蒦臈3 1上以數十㈣膜厚形成。該密封劑2丄可採 123217.doc -11 - 200828580 用熱硬化性樹脂或紫外線硬化性樹脂,於此例如採用由環 氧類構成之熱硬化性樹脂。 又’經由該密封劑21,例如由玻璃基板構成之透明基板 22與設有上述保護膜31之狀態之半導體基板u接著。於 此,作為透明基板22,除普通透鏡玻璃材料外,亦可使用 石英或水晶等。又,該透明基板22與半導體基板U構成為 頂視時同一形狀。 如此構成之固體攝像裝置丨藉由以下説明之方法製造。 首先’在複數排列形成固體攝像裝置1之上述半導體基 板11邛刀之半導體晶圓之絕緣膜13表面,以至少覆蓋電極 墊12上之狀態形成由氮化矽(SiN)構成之保護膜3ι。其 次,將與半導體晶圓同等大小之透明基板藉由上述密封劑 2 1接著。在该接著中,例如以旋轉塗佈法將密封劑21塗佈 在半導體晶圓或透明基板上,使半導體晶圓與透明基板相 貼合。然後,藉由加熱或紫外光照射使上述密封劑21硬 化再者,作為密封劑2 1,在使用感光性材料之情形下, 藉由加熱使密封劑2 1硬化。 、,其_人,對接著透明基板22後之半導體晶圓之背面進行磨 削,使半導體基板11之厚度減少至例如1〇〇//m以下。然 後,形成自半導體晶圓背面至電極墊12下面之貫通孔14。 為此’可採用雷射加工、光學微影術、反應離子蝕刻 (RIE)等加工技術。 然後,以覆蓋貫通孔14側壁之狀態,在半導體晶圓背面 全域形成由氧切(Si()2)等構成之絕緣膜丨卜該絕緣膜Η 123217.doc -12· 200828580 例如可使用環氧類乾膜形成。 接著’以覆蓋設有絕緣膜15之貫通孔14之内壁之狀態, 藉由例如濺鍍法形成由鈦/氮化鈦(Ti/TiN)構成之障壁膜(省 略圖不)和由銅(Cu)構成之種晶層(省略圖示)後,藉由電解 包鍍法在上述種晶層上形成銅(Cu)膜,將該等圖形化,形 成背面佈線1 6。
接著,將上述半導體晶圓與透明基板一同切斷為各個半 導體基板11,得到各個固體攝像裝置丨。較好的是,此時 於切斷之前,在透明基板表面形成橫斷面為V字形之溝 槽,沿著該溝槽切斷半導體晶圓及透明基板。 然後,以埋入設有背面佈線16之狀態之貫通孔14之狀 怨,在絕緣膜15上貼上積層膜,形成背面保護樹脂17,然 後在該背面保護樹脂丨7形成抵達背面佈線丨6狀態之開口部 17a,在自開口部17a露出之背面佈線“上,形成由錫 銀(Ag)-銅(Cu)構成之凸塊18。再者,背面保護樹脂^除由 上述積層膜形成外,亦可由真空鍍膜或噴塗形成。如上所 述即完成固體攝像裝置1。 依據該種固體攝像裝置丨,由於在電極墊12與密封劑以 之間佈置有由無機類絕緣材料構成之保護膜31,故可在伴 隨熱處理之製造製程中,緩和背面佈線16之熱膨脹而應力 向電極塾12集中。藉此,可防止因應力向電極塾12集中而 導致電極墊12與背面佈線16之剝離,可防止對固體攝像裝 置1之損害。因而,可提高固體攝像裝置丨之可靠度和良 率 0 123217.doc 13 200828580 再者,在上述實施形態中,説明由光學上透明之有機類 絕緣材料構成之密封劑21設置於覆蓋半導體基板丨丨全域之 保護膜3 1上全域之例,但密封劑21亦可以圍繞攝像區域s 之狀態設置於電極墊12之形成區域,即攝像區域s以外之 區域上。作為形成方法,密封劑2 1例如使用感光性樹脂, 例如藉由旋轉塗佈法將密封劑21塗佈在保護膜3 1上之後, 進行曝光、顯影,在攝像區域S以外之區域上圖案形成密 封劑2 1。在該情形下,由於不將密封劑2丨形成在攝像區域 S上,故作為密封劑21亦可使用不透明之有機類絕緣材 料。然後,與上述實施形態同樣,經由密封劑2丨接著透明 基板。又,上述密封劑21亦可形成在與上述攝像區域S以 外之區域對向之透明基板區域。 (第2實施形態) 其次,採用圖2(a)之要部放大剖面圖及圖2(b)i平面圖 説明本發明之固體攝像裝置之第2實施形態。再者,圖2(勾 之剖面圖係圖2(b)之X—X,剖面圖,圖2(b)係形成密封劑21 之丽之頂面圖。又,關於在第1實施形態中採用圖1説明之 包括没於貫通孔14内之背面佈線16在内之半導體基板丨丨之 背面11a側之構成,係與第1實施形態同樣之構成。 如圖2(a)所示,與第丨實施形態同樣,以覆蓋電極墊12之 狀態,在絕緣膜13上設有由無機類絕緣材料構成之保護膜 32。並且,作為本實施形態之特徵性構成,如圖2(b)所 示上述笔極墊12分割為與背面佈線1 6之連接區域12a和 檢查區域12b,在上述保護膜32上,以抵達上述檢查區域 123217.doc -14 - 200828580 12 b之狀恶,設有開口部^ 士务 邛32a。猎此,在塗佈密封劑2夂 照上述圖2(a))之前,將熘私雜η # " 將如針觸及猎由開口部32&露出之電 極塾12之檢查區域12b,可檢查上述光感測器良與不良。 並且,又如圖2⑷所示,在檢查結束後,經由密封劑21接 著透明基板22,可藉由密封劑21埋入開口部32a。 又,分割連接區域12a與檢查區域12b,可防止檢查用探 針觸及之板針痕穿透作為貫通孔14形成區域之絕緣膜Η ^ U加工貝通孔14時之處理氣體或電漿攻 擊而於密封劑21產生損傷(空穴),損傷部之水分、藥液等 吸附物在製程中放“誘發f面佈線16之形成不良或電極 墊12之腐蝕。 依據該種固體攝像裝置2,由於在電極墊12與密封劑门 之間佈置由無機類絕緣材料構成之保護膜32,故可取^與 第1實施形態同樣之效果。 又,依據本實施形態之固體攝像裝置2,由於藉由開口 部32a露出之電極墊12之檢查區域12b不和與背面佈線16之 連接區域12a重合,故可防止因探針痕產生之異常。 (弟3實施形態) 其次,採用圖3之要部放大剖面圖説明本發明之固體攝 像裝置之第3實施形態。再者,關於該圖所示之固體攝像 衣置3 ’包括設於貫通孔14内之背面佈線16在内之半導體 基板11之背面側之構成係與第1實施形態中採用圖1所説明 者同樣之構成。 如圖3所示,本實施形態之保護膜33具備:以覆蓋電極 123217.doc •15- 200828580 墊12之狀態設於絕緣膜13上之第j保護層33,和設於第1保護 層33’上之第2保護層33,,。於此,第j保護層33,和第2保護 層33’’與第1實施形態同樣,由無機類絕緣材料構成。 又,在第1保護層33,上,以與上述電極墊12連接之狀 態,在通路孔内經由障壁層設有例如由銅(Cu)構成之通路 41。並且,在第1保護層33’上,以與通路41連接之狀態, 經由障壁層設有例如由鋁(A1)構成之檢查用電極墊C。於 、 此,該檢查用電極墊42例如以頂視時與電極墊12及背面佈 線16重合之狀態配置。 又,在上述第2保護層33"上設有開口部33a,,,其抵達檢 查用電極塾42之通路41之連接區域以外之區域,將探針觸 及自該開口部33a,,露出之檢查用電極墊42之 查形成於半導體基板η上之元件。檢查結束後,經 劑21接著透明基板22,上述開口部33a"内成為藉由密封劑 21埋入之狀態。 於此,較好的是上述開口部33a,,設於檢查用電極墊〇之 通路之連接區域以外之區域。藉此,可防止檢查用電極 墊42在與通路41和密封劑21接觸之狀態被挾持,可緩和應 力向檢查用電極墊42集中。 依據該種固體攝像裝置3,由於在電極墊12與密封劑以 之間佈置由無機類絕緣材料構成之保護膜3 3,故可取得與 第1實施形態同樣之效果。 又,依據本實施形態之固體攝像裝置3,在保護膜33之 表面設置與電極墊12連接之檢查用電極墊42,可防止在與 123217.doc -16- 200828580 背面佈線16連接之電極墊12形成因檢查而產生之探針痕。 (變形例1) 再者’在上述第3實施形態之固體攝像裝置3中,係説明 笔極塾12之與为面佈線16之連接區域和檢查用電極塾々a在 頂視時重合之狀態設置之例,但是檢查用電極墊42之位置 並不特別限定。 如圖4所示,例如檢查用電極墊42亦可以藉由通路々丨與 ( 私極墊12連接之狀態,佈置於頂視時與電極墊丨2之與背面 佈線16之連接區域錯開之位置。 該種構成之固體攝像裝置3,亦可取得與第3實施形態之 固體攝像裝置3同樣之效果。 (第4實施形態) . 其次,採用圖5之要部放大剖面圖説明本發明之固體攝 像裝置之第4實施形態。 該圖所示之固體攝像裝置4係將自在第丨實施形態中採用 (, 圖H兑明之攝像區域8引出之絕緣膜13内之多層佈線構造之 一部分作為電極墊12’和檢查用電極墊42,使用。於此,構 成多層佈線構造之佈線層包含檢查用電極墊42,之最上侧佈 線層由鋁(A1)構成,此外之包含電極墊12,之佈線層由銅 (Cu)構成。在本實施形態中,絕緣膜13(參照上述圖丨)起作 用作為保護膜34,電極墊12,和檢查用電極墊“,均設在保 護膜3 4之内部。 '、 該情形下,以抵達設於保護膜34之内部之電極墊12,之 狀態設置貫通孔14,,在該貫通孔14,之内部’與^實施形 123217.doc 200828580 態同樣,設有背面佈線丨6。 又’在保護膜34上設有抵達檢查用電極墊42,之狀態之 開口部34a,將探針觸及自該開口部34a露出之檢查用電極 墊42’表面進行檢查。並且,檢查結束後,經由密封劑 2 1(芩照上述圖1)接著透明基板22(參照上述圖”,上述開 口部34a内成為藉由密封劑21埋入之狀態。 於此,較好的是上述開口部34a設於檢查用電極墊42,之 入通路41之連接區域以外之區域。藉此,可防止檢查用電 極墊42’在與通路41’和密封劑21接觸之狀態被挾持,可防 止應力向檢查用電極塾42,集中。 依據該種固體攝像裝置4,由於在電極墊12,和密封劑2ι 之間佈置由無機類絕緣材料構成之保護膜34,故可取得與 第1實施形態同樣之效果。 又,依據本實施形態之固體攝像裝置4,在比電極墊12, 更透明基板22側設置與電極墊12,連接之檢查用電極墊 42,可防止在與背面佈線16連接之電極墊丨2,上形成探 痕。 (變形例2) 再者’在上述第4實施形態之固體攝像裝置4中,就電極 墊12之與月面佈線16之連接區域和檢查用電極墊a,在頂 視時重合之狀態設置之例加以説明,但是檢查用電極塾a 之位置並不特別限定。 如圖6所示,例如檢查用電極塾42,亦可以藉由通路μ,與 電極塾12’連接之狀態佈置於頂視時與電極塾以之與背面 123217.doc -18- 200828580 佈線1 6之連接區域錯開之位置。 該種構成之固體攝像裝置4,亦可取得與第4實施形態之 固體攝像裝置4同樣之效果。 (弟5實施形態) 其次,採用圖7之要部放大剖面圖説明本發明之固體攝 像裝置之第5實施形態。關於該圖所示之固體攝像裝置5, 包含設於貫通孔14内之背面佈線16之半導體基板u之背面 側之構成儀與採關i在第丨實施㈣説明者同樣之構成。 如圖7所不,在本實施形態之固體攝像裝置5中,未設置 在第1實施形態中採用圖1説明之保護臈31,電極墊12之膜 厚设置得較構成背面佈線16之佈線材料之成膜膜厚更厚。 具體而:’電極塾12之膜厚係以數# m至數十p之膜厚 、成藉Λ #使電極塾12在密封劑2ι和背面佈線w之間 =接:之狀態被挾持,在伴隨熱處理之製造製程中,亦可 緩和背面佈線16之熱膨脹而應力向電極塾Η集中之影響。 依據该種固體攝像裝置5 ’電極墊12之膜厚設置得較構 成背面佈線16之佈線材料之成膜膜厚更厚,即使應力因背 :佈線:之熱恥脹而集中在電極墊Η,亦可防止因此而產 :異常。因❿,可防止對固體攝像裝置5之損害,故可 楗南固體攝像裝置5之可靠度和良率。 【圖式簡單說明】 圖1係顯示本於明夕& ^ "之弟1貫施形態之固體攝像裝置之構成 之。'1面圖⑷、要部放大剖面圖㈨。 圖2係顯示本於明 ^ 月之弟2貫施形態之固體攝像裝置之構成 123217.doc -19- 200828580
之要部放大剖面圖(a)及平面圖(b)。 圖3係顯示本發明之第3實施形態之固體攝像裝置之構成 之要部放大剖面圖。 圖4係顯示本發明之第3實施形態之變形例1之固體攝像 裝置之構成之要部放大剖面圖。 圖5係顯示本發明之第4實施形態之固體攝像裝置之構成 之要部放大剖面圖。 圖6係顯不本發明之第4實施形態之變形例2之固體攝像 破置之構成之要部放大剖面圖。 圖7係顯示本發明之第5實施形態之固體攝像裝置之構 之要部放大剖面圖。 圖8係用於説明先前之固體攝像裝置之要部放大剖面 圖9係顯示先前之固體攝像裝置之問圖 〇 題之要部放大剖面
【主要元件符號說明】 1〜5 1112、12, 固體攝像裝置 半導體基板 電極墊
16 21 22 31 〜34S 背面佈線 密封劑 透明基板 保護膜 攝像區域 123217.doc -20-
Claims (1)
- 200828580 、申請專利範圍: 1. 一種固體攝像裝置,其包衽· 見他 ·半導體基板,其係在表面 具備排列有光感測器 攝像£域和設在該攝像區域周緣 之電極墊;透明基板,苴在 甘α 一係每由密封劑接合在該半導體 暴板之表面;及背面佑妗 ^ ^ , 、,彳、係以貫通前述半導體基板 ::悲自料電極塾抵達該半導體基板之背面;其特徵 半導體基板與前述密封劑之間,以至少 述電極墊之狀態設有由盖 2. …、钱類、、、g緣材料構成之保護膜。 如請求項1之固體攝像裝置,其中 、 。刖述電極墊分割為與前述背面佈線之連接區域和檢查 區域; 一 A在前述保護膜設有抵達前述檢查區域之狀態之開口 部,且該開口部藉由前述密封劑埋入。 3.如請求項1之固體攝像裝置,其中 在雨述保護膜之表面側設有前述電極塾及藉由通路連 接之檢查用電極墊。 4. -種固體攝像裝置,其包括:半導體基板,其係在表面 具備排列有光感測器之攝像區域和設在該攝像區域周緣 之電極墊,透明基板,其係經由密封劑接合在該半導體 基板之表面;及背面佈線,其係以貫通前述半導體基板 之狀態自前述電極墊抵達該半導體基板之背面;其特徵 在於: 〆、、玉 前述電極墊以較構成前述背面佈線之佈線材料之成膜 膜厚更厚之膜厚形成。 123217.doc
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006323042A JP4403424B2 (ja) | 2006-11-30 | 2006-11-30 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200828580A true TW200828580A (en) | 2008-07-01 |
TWI351758B TWI351758B (zh) | 2011-11-01 |
Family
ID=39474746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096139885A TW200828580A (en) | 2006-11-30 | 2007-10-24 | Solid-state imaging device |
Country Status (4)
Country | Link |
---|---|
US (1) | US7851880B2 (zh) |
JP (1) | JP4403424B2 (zh) |
CN (1) | CN101192620A (zh) |
TW (1) | TW200828580A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI387083B (zh) * | 2007-12-27 | 2013-02-21 | Toshiba Kk | 包含貫穿孔電極與光傳輸基板的半導體封裝 |
TWI563319B (en) * | 2010-11-09 | 2016-12-21 | Tpk Touch Solutions Inc | Touch panel stackup |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8212331B1 (en) * | 2006-10-02 | 2012-07-03 | Newport Fab, Llc | Method for fabricating a backside through-wafer via in a processed wafer and related structure |
JP4713602B2 (ja) * | 2008-02-21 | 2011-06-29 | パナソニック株式会社 | 基板モジュールおよびその製造方法ならびに電子機器 |
JP2009283503A (ja) * | 2008-05-19 | 2009-12-03 | Panasonic Corp | 半導体装置及びその製造方法 |
EP2295597B1 (en) | 2008-05-29 | 2016-08-03 | Morinaga Milk Industry Co., Ltd. | Method of estimating surviving bacteria count and method of setting guaranteed bacteria count |
JP5175620B2 (ja) * | 2008-05-29 | 2013-04-03 | シャープ株式会社 | 電子素子ウェハモジュールおよびその製造方法、電子素子モジュール、電子情報機器 |
JP2009295676A (ja) * | 2008-06-03 | 2009-12-17 | Oki Semiconductor Co Ltd | 半導体装置及びその製造方法 |
JP5356742B2 (ja) | 2008-07-10 | 2013-12-04 | ラピスセミコンダクタ株式会社 | 半導体装置、半導体装置の製造方法および半導体パッケージの製造方法 |
JP2010040862A (ja) * | 2008-08-06 | 2010-02-18 | Fujikura Ltd | 半導体装置 |
JP5455538B2 (ja) * | 2008-10-21 | 2014-03-26 | キヤノン株式会社 | 半導体装置及びその製造方法 |
JP5434306B2 (ja) * | 2008-10-31 | 2014-03-05 | 日本電気株式会社 | 半導体装置及び半導体装置の製造方法 |
SG161130A1 (en) * | 2008-11-06 | 2010-05-27 | Turbine Overhaul Services Pte | Methods for repairing gas turbine engine components |
JP2010114390A (ja) | 2008-11-10 | 2010-05-20 | Panasonic Corp | 半導体装置および半導体装置の製造方法 |
WO2010061551A1 (ja) * | 2008-11-25 | 2010-06-03 | パナソニック株式会社 | 半導体装置および電子機器 |
JP4659875B2 (ja) * | 2008-11-25 | 2011-03-30 | パナソニック株式会社 | 半導体装置 |
JP5146307B2 (ja) * | 2008-12-26 | 2013-02-20 | パナソニック株式会社 | 半導体装置 |
DE102008054765A1 (de) * | 2008-12-16 | 2010-06-24 | Robert Bosch Gmbh | Bauteil mit einer Durchkontaktierung und ein Verfahren zur Herstellung eines solchen Bauteils |
JP5438980B2 (ja) | 2009-01-23 | 2014-03-12 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
JP2010206158A (ja) | 2009-02-04 | 2010-09-16 | Panasonic Corp | デバイス |
US9142586B2 (en) | 2009-02-24 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for backside illuminated image sensor |
JP5773379B2 (ja) * | 2009-03-19 | 2015-09-02 | ソニー株式会社 | 半導体装置とその製造方法、及び電子機器 |
JP5985136B2 (ja) | 2009-03-19 | 2016-09-06 | ソニー株式会社 | 半導体装置とその製造方法、及び電子機器 |
JP2010251558A (ja) * | 2009-04-16 | 2010-11-04 | Toshiba Corp | 固体撮像装置 |
JP2011009645A (ja) * | 2009-06-29 | 2011-01-13 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2011086709A (ja) * | 2009-10-14 | 2011-04-28 | Toshiba Corp | 固体撮像装置及びその製造方法 |
JP2011187754A (ja) * | 2010-03-10 | 2011-09-22 | Toshiba Corp | 固体撮像装置及びその製造方法 |
US8872293B2 (en) * | 2011-02-15 | 2014-10-28 | Sony Corporation | Solid-state imaging device and method of manufacturing the same and electronic apparatus |
JP5791461B2 (ja) | 2011-10-21 | 2015-10-07 | 浜松ホトニクス株式会社 | 光検出装置 |
JP5832852B2 (ja) | 2011-10-21 | 2015-12-16 | 浜松ホトニクス株式会社 | 光検出装置 |
US10269863B2 (en) * | 2012-04-18 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for via last through-vias |
US8890269B2 (en) * | 2012-05-31 | 2014-11-18 | Stmicroelectronics Pte Ltd. | Optical sensor package with through vias |
JP2014086596A (ja) * | 2012-10-24 | 2014-05-12 | Olympus Corp | 半導体装置、撮像装置、半導体基板の検査方法及び半導体装置の製造方法 |
US8952500B2 (en) * | 2013-03-15 | 2015-02-10 | IPEnval Consultant Inc. | Semiconductor device |
JP5764191B2 (ja) * | 2013-12-16 | 2015-08-12 | ラピスセミコンダクタ株式会社 | 半導体装置 |
EP2889901B1 (en) | 2013-12-27 | 2021-02-03 | ams AG | Semiconductor device with through-substrate via and corresponding method |
JP6187320B2 (ja) * | 2014-03-03 | 2017-08-30 | 株式会社デンソー | 受光チップ |
TWI676280B (zh) * | 2014-04-18 | 2019-11-01 | 日商新力股份有限公司 | 固體攝像裝置及具備其之電子機器 |
TWI628723B (zh) * | 2015-03-10 | 2018-07-01 | 精材科技股份有限公司 | 一種晶片尺寸等級的感測晶片封裝體及其製造方法 |
JP6138859B2 (ja) * | 2015-06-12 | 2017-05-31 | ラピスセミコンダクタ株式会社 | 半導体装置 |
US10038026B2 (en) | 2015-06-25 | 2018-07-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bond pad structure for bonding improvement |
CN106365110A (zh) * | 2015-07-24 | 2017-02-01 | 上海丽恒光微电子科技有限公司 | 探测传感器及其制备方法 |
JP6704126B2 (ja) * | 2015-12-17 | 2020-06-03 | パナソニックIpマネジメント株式会社 | 接続構造体 |
CN106910693B (zh) * | 2015-12-23 | 2019-11-08 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
JP6780277B2 (ja) * | 2016-03-29 | 2020-11-04 | 株式会社ニコン | 基板 |
CN205752132U (zh) * | 2016-05-19 | 2016-11-30 | 深圳市汇顶科技股份有限公司 | 硅通孔芯片、指纹识别传感器和终端设备 |
TWI698963B (zh) * | 2016-06-03 | 2020-07-11 | 日商大日本印刷股份有限公司 | 貫通電極基板及其製造方法、以及安裝基板 |
JP6791584B2 (ja) * | 2017-02-01 | 2020-11-25 | 株式会社ディスコ | 加工方法 |
CN109273462A (zh) * | 2017-07-17 | 2019-01-25 | 中芯国际集成电路制造(上海)有限公司 | 一种cis芯片封装方法及结构 |
CN109786478A (zh) * | 2017-11-15 | 2019-05-21 | 福建钧石能源有限公司 | 一种异质结电池的电极制备及热处理方法 |
TWI645517B (zh) * | 2018-02-02 | 2018-12-21 | 華星光通科技股份有限公司 | Photosensor electrode stack structure for preventing moisture from entering |
JP2019160866A (ja) * | 2018-03-08 | 2019-09-19 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
JP7303698B2 (ja) | 2019-08-08 | 2023-07-05 | キヤノン株式会社 | 半導体装置および機器 |
CN115315808A (zh) * | 2020-03-31 | 2022-11-08 | 索尼半导体解决方案公司 | 摄像元件和摄像元件的制造方法 |
WO2021199679A1 (ja) * | 2020-03-31 | 2021-10-07 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像素子の製造方法 |
WO2022209128A1 (ja) * | 2021-03-29 | 2022-10-06 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001284394A (ja) | 2000-03-31 | 2001-10-12 | Matsushita Electric Ind Co Ltd | 半導体素子 |
JP4000507B2 (ja) * | 2001-10-04 | 2007-10-31 | ソニー株式会社 | 固体撮像装置の製造方法 |
US7180149B2 (en) * | 2003-08-28 | 2007-02-20 | Fujikura Ltd. | Semiconductor package with through-hole |
JP2005202101A (ja) | 2004-01-15 | 2005-07-28 | Nippon Oil Corp | 透過型液晶表示素子 |
JP4242336B2 (ja) | 2004-02-05 | 2009-03-25 | パナソニック株式会社 | 半導体装置 |
JP4307296B2 (ja) | 2004-03-12 | 2009-08-05 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP4246132B2 (ja) * | 2004-10-04 | 2009-04-02 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2007081137A (ja) * | 2005-09-14 | 2007-03-29 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
JP2007194498A (ja) | 2006-01-20 | 2007-08-02 | Fujifilm Corp | 固体撮像装置およびその製造方法 |
-
2006
- 2006-11-30 JP JP2006323042A patent/JP4403424B2/ja not_active Expired - Fee Related
-
2007
- 2007-10-24 TW TW096139885A patent/TW200828580A/zh not_active IP Right Cessation
- 2007-11-26 US US11/944,831 patent/US7851880B2/en active Active
- 2007-11-28 CN CNA2007101961190A patent/CN101192620A/zh active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI387083B (zh) * | 2007-12-27 | 2013-02-21 | Toshiba Kk | 包含貫穿孔電極與光傳輸基板的半導體封裝 |
TWI563319B (en) * | 2010-11-09 | 2016-12-21 | Tpk Touch Solutions Inc | Touch panel stackup |
US10691266B2 (en) | 2010-11-09 | 2020-06-23 | Tpk Touch Solutions, Inc. | Touch panel stackup |
Also Published As
Publication number | Publication date |
---|---|
US20080128848A1 (en) | 2008-06-05 |
JP2008140819A (ja) | 2008-06-19 |
CN101192620A (zh) | 2008-06-04 |
JP4403424B2 (ja) | 2010-01-27 |
TWI351758B (zh) | 2011-11-01 |
US7851880B2 (en) | 2010-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200828580A (en) | Solid-state imaging device | |
TWI629759B (zh) | 晶片封裝體及其製造方法 | |
US10157811B2 (en) | Chip package and method for forming the same | |
US10056419B2 (en) | Chip package having chip connected to sensing device with redistribution layer in insulator layer | |
JP5259197B2 (ja) | 半導体装置及びその製造方法 | |
TWI338911B (en) | Stacked structures and methods for fabricating stacked structures and semiconductor devices | |
TWI330392B (en) | Semiconductor device, manufacturing method of the semiconductor device, and mounting method of the semiconductor device | |
TWI401793B (zh) | Semiconductor device | |
TWI336920B (en) | Pad structure and forming method of the same | |
US10153237B2 (en) | Chip package and method for forming the same | |
TW200915511A (en) | Semiconductor device | |
US20170077158A1 (en) | Chip package and method for forming the same | |
TW201117346A (en) | Semiconductor device including through-electrode and method of manufacturing the same | |
JP2007305960A (ja) | 半導体装置およびその製造方法 | |
JP2009076629A (ja) | 半導体装置とその製造方法 | |
JP2018505564A (ja) | パッケージ化方法およびパッケージ構造 | |
JP4816601B2 (ja) | 固体撮像素子及び固体撮像素子の製造方法 | |
JP2016509374A (ja) | 輻射線検出用半導体素子及び輻射線検出用半導体素子の製造方法 | |
TW201834069A (zh) | 半導體裝置及半導體裝置之製造方法 | |
JP4431628B1 (ja) | 半導体装置及びその製造方法 | |
JP2015225933A (ja) | 半導体装置及びその製造方法 | |
JP5136515B2 (ja) | 固体撮像装置 | |
JP4468427B2 (ja) | 半導体装置の製造方法 | |
TW201631718A (zh) | 晶片封裝體及其製造方法 | |
TWI594409B (zh) | 影像傳感晶片封裝結構及封裝方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |