TW200801809A - Positive photoresist composition for immersion lithography, and method for forming resist pattern - Google Patents

Positive photoresist composition for immersion lithography, and method for forming resist pattern

Info

Publication number
TW200801809A
TW200801809A TW096100558A TW96100558A TW200801809A TW 200801809 A TW200801809 A TW 200801809A TW 096100558 A TW096100558 A TW 096100558A TW 96100558 A TW96100558 A TW 96100558A TW 200801809 A TW200801809 A TW 200801809A
Authority
TW
Taiwan
Prior art keywords
acid
photoresist composition
positive photoresist
immersion lithography
structural unit
Prior art date
Application number
TW096100558A
Other languages
English (en)
Other versions
TWI340874B (en
Inventor
Hiroaki Shimizu
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200801809A publication Critical patent/TW200801809A/zh
Application granted granted Critical
Publication of TWI340874B publication Critical patent/TWI340874B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW096100558A 2006-01-26 2007-01-05 Positive photoresist composition for immersion lithography, and method for forming resist pattern TWI340874B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006018087A JP2007199412A (ja) 2006-01-26 2006-01-26 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200801809A true TW200801809A (en) 2008-01-01
TWI340874B TWI340874B (en) 2011-04-21

Family

ID=38308989

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096100558A TWI340874B (en) 2006-01-26 2007-01-05 Positive photoresist composition for immersion lithography, and method for forming resist pattern

Country Status (4)

Country Link
US (1) US7910285B2 (zh)
JP (1) JP2007199412A (zh)
TW (1) TWI340874B (zh)
WO (1) WO2007086181A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI726755B (zh) * 2019-07-18 2021-05-01 南韓商榮昌化工股份有限公司 用於微影的製程液體組成物及使用該組成物的圖案形成方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6013416A (en) * 1995-06-28 2000-01-11 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
JP3380128B2 (ja) 1996-11-29 2003-02-24 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3798458B2 (ja) 1996-02-02 2006-07-19 東京応化工業株式会社 オキシムスルホネート化合物及びレジスト用酸発生剤
US5945517A (en) * 1996-07-24 1999-08-31 Tokyo Ohka Kogyo Co., Ltd. Chemical-sensitization photoresist composition
JP3980124B2 (ja) 1997-07-24 2007-09-26 東京応化工業株式会社 新規ビススルホニルジアゾメタン
JP3854689B2 (ja) 1997-07-24 2006-12-06 東京応化工業株式会社 新規な光酸発生剤
JP3865473B2 (ja) 1997-07-24 2007-01-10 東京応化工業株式会社 新規なジアゾメタン化合物
JP3935267B2 (ja) 1998-05-18 2007-06-20 東京応化工業株式会社 新規なレジスト用酸発生剤
US6153733A (en) * 1998-05-18 2000-11-28 Tokyo Ohka Kogyo Co., Ltd. (Disulfonyl diazomethane compounds)
TW573225B (en) * 2000-02-28 2004-01-21 Sumitomo Chemical Co Chemically amplified positive resist composition
CN1499296A (zh) * 2002-10-30 2004-05-26 ס�ѻ�ѧ��ҵ��ʽ���� 一种化学增幅型正性抗蚀剂组合物
CA2511979A1 (en) 2003-02-19 2004-09-02 Akira Matsumoto Halogenated oxime derivatives and the use thereof as latent acids
JP2005023234A (ja) * 2003-07-04 2005-01-27 Jsr Corp アクリル系重合体および感放射線性樹脂組成物
US7449573B2 (en) * 2004-02-16 2008-11-11 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
JP4491335B2 (ja) 2004-02-16 2010-06-30 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP2005316259A (ja) 2004-04-30 2005-11-10 Fuji Photo Film Co Ltd 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI726755B (zh) * 2019-07-18 2021-05-01 南韓商榮昌化工股份有限公司 用於微影的製程液體組成物及使用該組成物的圖案形成方法

Also Published As

Publication number Publication date
US20090042130A1 (en) 2009-02-12
WO2007086181A1 (ja) 2007-08-02
US7910285B2 (en) 2011-03-22
TWI340874B (en) 2011-04-21
JP2007199412A (ja) 2007-08-09

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