TW200744145A - Cluster processing apparatus - Google Patents

Cluster processing apparatus

Info

Publication number
TW200744145A
TW200744145A TW095142991A TW95142991A TW200744145A TW 200744145 A TW200744145 A TW 200744145A TW 095142991 A TW095142991 A TW 095142991A TW 95142991 A TW95142991 A TW 95142991A TW 200744145 A TW200744145 A TW 200744145A
Authority
TW
Taiwan
Prior art keywords
enclosure
gas
processing apparatus
cluster processing
robot
Prior art date
Application number
TW095142991A
Other languages
English (en)
Other versions
TWI310972B (en
Inventor
Chen-Hua Yu
Ming-Hsing Tsai
Yi-Li Hsiao
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200744145A publication Critical patent/TW200744145A/zh
Application granted granted Critical
Publication of TWI310972B publication Critical patent/TWI310972B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883—Post-treatment or after-treatment of the conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW095142991A 2006-05-17 2006-11-21 Cluster processing apparatus TWI310972B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US74744206P 2006-05-17 2006-05-17
US11/419,933 US8322299B2 (en) 2006-05-17 2006-05-23 Cluster processing apparatus for metallization processing in semiconductor manufacturing

Publications (2)

Publication Number Publication Date
TW200744145A true TW200744145A (en) 2007-12-01
TWI310972B TWI310972B (en) 2009-06-11

Family

ID=38608161

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095142991A TWI310972B (en) 2006-05-17 2006-11-21 Cluster processing apparatus

Country Status (7)

Country Link
US (1) US8322299B2 (zh)
JP (1) JP4637081B2 (zh)
KR (1) KR100839653B1 (zh)
DE (1) DE102006058814B4 (zh)
FR (1) FR2901405B1 (zh)
SG (1) SG137731A1 (zh)
TW (1) TWI310972B (zh)

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FR2913145B1 (fr) * 2007-02-22 2009-05-15 Stmicroelectronics Crolles Sas Assemblage de deux parties de circuit electronique integre
US7758338B2 (en) * 2007-05-29 2010-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate carrier, port apparatus and facility interface and apparatus including same
US8827695B2 (en) * 2008-06-23 2014-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer's ambiance control
US20110226324A1 (en) * 2010-03-16 2011-09-22 Grain Free Products, Inc. System for the Production of Single Crystal Semiconductors and Solar Panels Using the Single Crystal Semiconductors
WO2011135731A1 (ja) * 2010-04-28 2011-11-03 株式会社ユーテック 基板処理装置及び薄膜の製造方法
US20140183051A1 (en) * 2013-01-02 2014-07-03 International Business Machines Corporation Deposition of pure metals in 3d structures
US10593593B2 (en) * 2018-07-27 2020-03-17 Globalfoundries Inc. Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation
KR20200143605A (ko) 2019-06-14 2020-12-24 삼성전자주식회사 열분해막을 이용한 반도체 소자의 제조 방법, 반도체 제조 장비 및 이를 이용하여 제조된 반도체 소자
TW202208075A (zh) * 2020-04-28 2022-03-01 日商東京威力科創股份有限公司 半導體裝置之製造方法、半導體製造裝置及系統
JP2022018359A (ja) * 2020-07-15 2022-01-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN112708926A (zh) * 2020-12-16 2021-04-27 上海华力微电子有限公司 一种用于铜电镀机台的缓冲装置及铜电镀机台
KR20230114193A (ko) * 2022-01-24 2023-08-01 주식회사 에이치피에스피 듀얼 고압 웨이퍼 처리설비를 이용한 웨이퍼 고압 처리 방법

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Also Published As

Publication number Publication date
US8322299B2 (en) 2012-12-04
KR20070111312A (ko) 2007-11-21
FR2901405B1 (fr) 2013-09-13
JP2007311745A (ja) 2007-11-29
FR2901405A1 (fr) 2007-11-23
JP4637081B2 (ja) 2011-02-23
US20070267461A1 (en) 2007-11-22
KR100839653B1 (ko) 2008-06-20
SG137731A1 (en) 2007-12-28
TWI310972B (en) 2009-06-11
DE102006058814A1 (de) 2007-11-22
DE102006058814B4 (de) 2010-04-08

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