TW200741819A - Semiconductor substrate, semiconductor device manufacturing method thereof, and method for designing semiconductor substrate - Google Patents
Semiconductor substrate, semiconductor device manufacturing method thereof, and method for designing semiconductor substrateInfo
- Publication number
- TW200741819A TW200741819A TW095126769A TW95126769A TW200741819A TW 200741819 A TW200741819 A TW 200741819A TW 095126769 A TW095126769 A TW 095126769A TW 95126769 A TW95126769 A TW 95126769A TW 200741819 A TW200741819 A TW 200741819A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor substrate
- semiconductor
- device manufacturing
- designing
- disposed
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 9
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005212748A JP2007035702A (ja) | 2005-07-22 | 2005-07-22 | 半導体基板及び半導体装置、並びにこれらの製造方法、半導体基板の設計方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200741819A true TW200741819A (en) | 2007-11-01 |
Family
ID=37657016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095126769A TW200741819A (en) | 2005-07-22 | 2006-07-21 | Semiconductor substrate, semiconductor device manufacturing method thereof, and method for designing semiconductor substrate |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070045657A1 (zh) |
JP (1) | JP2007035702A (zh) |
KR (1) | KR100798826B1 (zh) |
CN (1) | CN1901207A (zh) |
TW (1) | TW200741819A (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9029949B2 (en) | 2013-09-25 | 2015-05-12 | International Business Machines Corporation | Semiconductor-on-insulator (SOI) structures with local heat dissipater(s) and methods |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05299437A (ja) * | 1992-04-24 | 1993-11-12 | Sanyo Electric Co Ltd | Soi型mosfetとその製造方法 |
JPH06216376A (ja) * | 1993-01-18 | 1994-08-05 | Hitachi Ltd | 電界効果型半導体装置 |
JP3980670B2 (ja) * | 1994-09-09 | 2007-09-26 | 株式会社ルネサステクノロジ | 半導体装置 |
KR100201779B1 (ko) * | 1996-06-29 | 1999-06-15 | 김주용 | 반도체 장치 및 그 제조방법 |
EP0993053A1 (en) * | 1998-10-09 | 2000-04-12 | STMicroelectronics S.r.l. | Infrared detector integrated with a waveguide and method of manufacturing |
US6596570B2 (en) * | 2001-06-06 | 2003-07-22 | International Business Machines Corporation | SOI device with reduced junction capacitance |
CN1620728A (zh) * | 2002-01-21 | 2005-05-25 | 松下电器产业株式会社 | 半导体装置 |
US20070090456A1 (en) * | 2005-08-29 | 2007-04-26 | Jin-Yuan Lee | Soi device and method for fabricating the same |
-
2005
- 2005-07-22 JP JP2005212748A patent/JP2007035702A/ja not_active Withdrawn
-
2006
- 2006-07-20 KR KR1020060067924A patent/KR100798826B1/ko active IP Right Grant
- 2006-07-21 TW TW095126769A patent/TW200741819A/zh unknown
- 2006-07-21 CN CNA2006101077839A patent/CN1901207A/zh active Pending
- 2006-07-24 US US11/492,607 patent/US20070045657A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20070045657A1 (en) | 2007-03-01 |
KR100798826B1 (ko) | 2008-01-28 |
CN1901207A (zh) | 2007-01-24 |
KR20070012231A (ko) | 2007-01-25 |
JP2007035702A (ja) | 2007-02-08 |
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