TW200723363A - Manufacturing method of display device and mold therefor - Google Patents

Manufacturing method of display device and mold therefor

Info

Publication number
TW200723363A
TW200723363A TW095140610A TW95140610A TW200723363A TW 200723363 A TW200723363 A TW 200723363A TW 095140610 A TW095140610 A TW 095140610A TW 95140610 A TW95140610 A TW 95140610A TW 200723363 A TW200723363 A TW 200723363A
Authority
TW
Taiwan
Prior art keywords
display device
manufacturing
master layer
base substrate
substrate
Prior art date
Application number
TW095140610A
Other languages
English (en)
Other versions
TWI344673B (en
Inventor
Jae-Hyuk Chang
Mun-Pyo Hong
Nam-Seok Roh
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200723363A publication Critical patent/TW200723363A/zh
Application granted granted Critical
Publication of TWI344673B publication Critical patent/TWI344673B/zh

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Optical Filters (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
TW095140610A 2005-11-02 2006-11-02 Manufacturing method of display device and mold therefor TWI344673B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050104511A KR101171190B1 (ko) 2005-11-02 2005-11-02 표시장치의 제조방법과 이에 사용되는 몰드

Publications (2)

Publication Number Publication Date
TW200723363A true TW200723363A (en) 2007-06-16
TWI344673B TWI344673B (en) 2011-07-01

Family

ID=37996924

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095140610A TWI344673B (en) 2005-11-02 2006-11-02 Manufacturing method of display device and mold therefor

Country Status (5)

Country Link
US (2) US8043550B2 (zh)
JP (1) JP4602309B2 (zh)
KR (1) KR101171190B1 (zh)
CN (2) CN101320203A (zh)
TW (1) TWI344673B (zh)

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GB2467316B (en) * 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
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WO2010048988A1 (en) * 2008-10-28 2010-05-06 Hewlett-Packard Development Company, L.P. Composite stamp for embossing
FR2960658B1 (fr) 2010-05-28 2013-05-24 Commissariat Energie Atomique Lithographie par impression nanometrique
US9168679B2 (en) * 2010-07-16 2015-10-27 Northwestern University Programmable soft lithography: solvent-assisted nanoscale embossing
CN102385083B (zh) * 2010-09-03 2014-09-03 株式会社Lg化学 毯及其制造方法、和滤色器衬底及其制造装置和方法
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WO2017131499A1 (ko) * 2016-01-27 2017-08-03 주식회사 엘지화학 필름 마스크, 이의 제조방법, 이를 이용한 패턴 형성 방법 및 이를 이용하여 형성된 패턴
KR102138960B1 (ko) 2016-01-27 2020-07-28 주식회사 엘지화학 필름 마스크, 이의 제조방법, 이를 이용한 패턴 형성 방법 및 이를 이용하여 형성된 패턴
JP6812119B2 (ja) * 2016-03-23 2021-01-13 旭化成株式会社 電位測定デバイス
TWI677765B (zh) * 2017-02-28 2019-11-21 日商東芝機械股份有限公司 轉印方法及轉印裝置
JP2018140576A (ja) * 2017-02-28 2018-09-13 東芝機械株式会社 転写方法およびモールド
FR3122523B1 (fr) * 2021-04-30 2023-06-09 Commissariat Energie Atomique Procede de structuration de surface hybride par gravure plasma

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Also Published As

Publication number Publication date
CN1983003A (zh) 2007-06-20
TWI344673B (en) 2011-07-01
US20120021139A1 (en) 2012-01-26
KR101171190B1 (ko) 2012-08-06
CN100552518C (zh) 2009-10-21
KR20070047610A (ko) 2007-05-07
CN101320203A (zh) 2008-12-10
US20070099323A1 (en) 2007-05-03
JP4602309B2 (ja) 2010-12-22
JP2007128083A (ja) 2007-05-24
US8043550B2 (en) 2011-10-25

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