TW200715375A - Low-temperature catalyzed formation of segmented nanowire of dielectric material - Google Patents

Low-temperature catalyzed formation of segmented nanowire of dielectric material

Info

Publication number
TW200715375A
TW200715375A TW095123863A TW95123863A TW200715375A TW 200715375 A TW200715375 A TW 200715375A TW 095123863 A TW095123863 A TW 095123863A TW 95123863 A TW95123863 A TW 95123863A TW 200715375 A TW200715375 A TW 200715375A
Authority
TW
Taiwan
Prior art keywords
dielectric material
low
substrate
segmented nanowire
temperature catalyzed
Prior art date
Application number
TW095123863A
Other languages
English (en)
Other versions
TWI335619B (en
Inventor
Dong-Hui Lu
Zhan Chen
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200715375A publication Critical patent/TW200715375A/zh
Application granted granted Critical
Publication of TWI335619B publication Critical patent/TWI335619B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
TW095123863A 2005-06-30 2006-06-30 Low-temperature catalyzed formation of segmented nanowire of dielectric material TWI335619B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/174,076 US20070004225A1 (en) 2005-06-30 2005-06-30 Low-temperature catalyzed formation of segmented nanowire of dielectric material

Publications (2)

Publication Number Publication Date
TW200715375A true TW200715375A (en) 2007-04-16
TWI335619B TWI335619B (en) 2011-01-01

Family

ID=37313897

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095123863A TWI335619B (en) 2005-06-30 2006-06-30 Low-temperature catalyzed formation of segmented nanowire of dielectric material

Country Status (3)

Country Link
US (2) US20070004225A1 (zh)
TW (1) TWI335619B (zh)
WO (1) WO2007005816A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452008B (zh) * 2010-03-03 2014-09-11 Huang Chung Cheng 奈米結構的製造方法及奈米結構於三維結構之應用
TWI495612B (zh) * 2013-01-04 2015-08-11 Univ Nat Chiao Tung 一維鈦金屬奈米結構及其製造方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2006343556B2 (en) * 2005-12-29 2012-06-21 Oned Material, Inc. Methods for oriented growth of nanowires on patterned substrates
US20080093693A1 (en) * 2006-10-20 2008-04-24 Kamins Theodore I Nanowire sensor with variant selectively interactive segments
WO2009143406A2 (en) * 2008-05-22 2009-11-26 Massachusetts Institute Of Technology Monolayer-coated surfaces as catalytic platforms for organic reactions
KR101027012B1 (ko) * 2008-10-16 2011-04-11 한국과학기술연구원 기울어진 마이크로 기둥 배열이 형성된 고분자 및 이를위한 제작 방법
US8623288B1 (en) 2009-06-29 2014-01-07 Nanosys, Inc. Apparatus and methods for high density nanowire growth
US8569900B2 (en) * 2009-07-20 2013-10-29 Hewlett-Packard Development Company, L.P. Nanowire sensor with angled segments that are differently functionalized
US9463433B2 (en) * 2013-06-24 2016-10-11 Jefferson Science Associates, Llc Nano-materials for adhesive-free adsorbers for bakable extreme high vacuum cryopump surfaces
US9776865B2 (en) 2013-11-01 2017-10-03 Bnnt, Llc Induction-coupled plasma synthesis of boron nitride nanotubes
KR101771872B1 (ko) 2014-04-24 2017-08-25 비엔엔티 엘엘씨 연속 질화붕소 나노튜브 섬유
CA2968358C (en) 2014-11-01 2022-10-18 Bnnt, Llc Target holders, multiple-incidence angle, and multizone heating for bnnt synthesis
KR20230048460A (ko) 2014-12-17 2023-04-11 비엔엔티 엘엘씨 질화붕소 나노튜브 강화 전기 부품
CA2985795C (en) 2015-05-13 2023-11-07 Bnnt, Llc Boron nitride nanotube neutron detector
CA2986250C (en) 2015-05-21 2024-01-02 Bnnt, Llc Boron nitride nanotube synthesis via direct induction

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5530846A (en) * 1978-08-28 1980-03-04 Hitachi Ltd Method for manufacturing fixed memory
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7608147B2 (en) * 2003-04-04 2009-10-27 Qunano Ab Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
US7091120B2 (en) * 2003-08-04 2006-08-15 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom
DE10335813B4 (de) * 2003-08-05 2009-02-12 Infineon Technologies Ag IC-Chip mit Nanowires
US7923109B2 (en) * 2004-01-05 2011-04-12 Board Of Regents, The University Of Texas System Inorganic nanowires
US7355235B2 (en) * 2004-12-22 2008-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for high-k gate dielectrics

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452008B (zh) * 2010-03-03 2014-09-11 Huang Chung Cheng 奈米結構的製造方法及奈米結構於三維結構之應用
TWI495612B (zh) * 2013-01-04 2015-08-11 Univ Nat Chiao Tung 一維鈦金屬奈米結構及其製造方法
US9725825B2 (en) 2013-01-04 2017-08-08 National Chiao Tung University One-dimensional titanium nanostructure and method for fabricating the same

Also Published As

Publication number Publication date
US20090093131A1 (en) 2009-04-09
WO2007005816A3 (en) 2007-07-12
WO2007005816A2 (en) 2007-01-11
US20070004225A1 (en) 2007-01-04
TWI335619B (en) 2011-01-01

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