TW200712787A - Lithographic apparatus, contaminant trap, and device manufacturing method - Google Patents
Lithographic apparatus, contaminant trap, and device manufacturing methodInfo
- Publication number
- TW200712787A TW200712787A TW095122604A TW95122604A TW200712787A TW 200712787 A TW200712787 A TW 200712787A TW 095122604 A TW095122604 A TW 095122604A TW 95122604 A TW95122604 A TW 95122604A TW 200712787 A TW200712787 A TW 200712787A
- Authority
- TW
- Taiwan
- Prior art keywords
- contaminant trap
- radiation beam
- lithographic apparatus
- device manufacturing
- radiation
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
Landscapes
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/175,036 US7397056B2 (en) | 2005-07-06 | 2005-07-06 | Lithographic apparatus, contaminant trap, and device manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200712787A true TW200712787A (en) | 2007-04-01 |
TWI341443B TWI341443B (en) | 2011-05-01 |
Family
ID=37116128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095122604A TWI341443B (en) | 2005-07-06 | 2006-06-23 | Lithographic apparatus, contaminant trap, and device manufacturing method |
Country Status (8)
Country | Link |
---|---|
US (2) | US7397056B2 (zh) |
EP (1) | EP1742110B1 (zh) |
JP (1) | JP4463243B2 (zh) |
KR (1) | KR100803741B1 (zh) |
CN (1) | CN1892441B (zh) |
DE (1) | DE602006002439D1 (zh) |
SG (2) | SG128670A1 (zh) |
TW (1) | TWI341443B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI407262B (zh) * | 2007-11-05 | 2013-09-01 | 羅門哈斯電子材料有限公司 | 浸潤式微影組成物及製程 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
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NL1008352C2 (nl) | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
CN100476585C (zh) * | 2002-12-23 | 2009-04-08 | Asml荷兰有限公司 | 具有可扩展薄片的杂质屏蔽 |
US7446329B2 (en) * | 2003-08-07 | 2008-11-04 | Intel Corporation | Erosion resistance of EUV source electrodes |
SG123767A1 (en) | 2004-12-28 | 2006-07-26 | Asml Netherlands Bv | Lithographic apparatus, illumination system and filter system |
SG123770A1 (en) * | 2004-12-28 | 2006-07-26 | Asml Netherlands Bv | Lithographic apparatus, radiation system and filt er system |
JP4366358B2 (ja) * | 2004-12-29 | 2009-11-18 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、照明システム、フィルタ・システム、およびそのようなフィルタ・システムのサポートを冷却するための方法 |
US7397056B2 (en) * | 2005-07-06 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus, contaminant trap, and device manufacturing method |
US7453077B2 (en) * | 2005-11-05 | 2008-11-18 | Cymer, Inc. | EUV light source |
US7332731B2 (en) * | 2005-12-06 | 2008-02-19 | Asml Netherlands, B.V. | Radiation system and lithographic apparatus |
US7465943B2 (en) * | 2005-12-08 | 2008-12-16 | Asml Netherlands B.V. | Controlling the flow through the collector during cleaning |
US7468521B2 (en) * | 2005-12-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7453071B2 (en) * | 2006-03-29 | 2008-11-18 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus comprising same |
US7368733B2 (en) * | 2006-03-30 | 2008-05-06 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus comprising same |
US7442948B2 (en) * | 2006-05-15 | 2008-10-28 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus |
US7696492B2 (en) | 2006-12-13 | 2010-04-13 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
JP5103976B2 (ja) * | 2007-03-23 | 2012-12-19 | ウシオ電機株式会社 | ホイルトラップ及びこのホイルトラップを用いた極端紫外光光源装置 |
US7839482B2 (en) * | 2007-05-21 | 2010-11-23 | Asml Netherlands B.V. | Assembly comprising a radiation source, a reflector and a contaminant barrier |
US8227771B2 (en) * | 2007-07-23 | 2012-07-24 | Asml Netherlands B.V. | Debris prevention system and lithographic apparatus |
JP5475693B2 (ja) * | 2008-02-28 | 2014-04-16 | コーニンクレッカ フィリップス エヌ ヴェ | 回転フォイルトラップ及び駆動装置を持つデブリ低減装置 |
WO2009144609A1 (en) * | 2008-05-28 | 2009-12-03 | Philips Intellectual Property & Standards Gmbh | Debris mitigation device |
JP5732392B2 (ja) * | 2008-08-14 | 2015-06-10 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源およびリソグラフィ装置 |
KR101652364B1 (ko) * | 2008-09-11 | 2016-09-09 | 에이에스엠엘 네델란즈 비.브이. | 방사선 소스 및 리소그래피 장치 |
JP5732525B2 (ja) * | 2010-04-22 | 2015-06-10 | エーエスエムエル ネザーランズ ビー.ブイ. | コレクタミラーアセンブリおよび極端紫外線放射の生成方法 |
KR101968675B1 (ko) * | 2010-06-25 | 2019-04-12 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 방법 |
US9268031B2 (en) * | 2012-04-09 | 2016-02-23 | Kla-Tencor Corporation | Advanced debris mitigation of EUV light source |
WO2013189827A2 (en) * | 2012-06-22 | 2013-12-27 | Asml Netherlands B.V. | Radiation source and lithographic apparatus. |
WO2014004453A1 (en) | 2012-06-29 | 2014-01-03 | The Procter & Gamble Company | System and method for high-speed continuous application of a strip material to a moving sheet-like substrate material |
KR20140036538A (ko) * | 2012-09-17 | 2014-03-26 | 삼성전자주식회사 | 극자외선 생성 장치, 이를 포함하는 노광 장치 및 이러한 노광 장치를 사용해서 제조된 전자 디바이스 |
CN103237401A (zh) * | 2013-04-01 | 2013-08-07 | 哈尔滨工业大学 | 一种去除毛细管放电极紫外光刻光源中碎屑的除屑*** |
KR102115543B1 (ko) * | 2013-04-26 | 2020-05-26 | 삼성전자주식회사 | 극자외선 광원 장치 |
KR102094800B1 (ko) * | 2013-07-25 | 2020-03-31 | 삼성디스플레이 주식회사 | 오염 물질 측정 기판, 이를 이용한 기판 제조 장치 및 제조 방법 |
WO2015124344A1 (en) | 2014-02-20 | 2015-08-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9609731B2 (en) | 2014-07-07 | 2017-03-28 | Media Lario Srl | Systems and methods for synchronous operation of debris-mitigation devices |
WO2019043773A1 (ja) * | 2017-08-29 | 2019-03-07 | ギガフォトン株式会社 | 極端紫外光生成装置 |
US11307119B2 (en) * | 2019-04-23 | 2022-04-19 | Pall Corporation | Aircraft air contaminant collector device and method of use |
Family Cites Families (36)
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US4408338A (en) * | 1981-12-31 | 1983-10-04 | International Business Machines Corporation | Pulsed electromagnetic radiation source having a barrier for discharged debris |
US4837794A (en) * | 1984-10-12 | 1989-06-06 | Maxwell Laboratories Inc. | Filter apparatus for use with an x-ray source |
JPH07120267B2 (ja) * | 1987-03-04 | 1995-12-20 | 日本電信電話株式会社 | カウンタ回路 |
JPH09320792A (ja) | 1996-05-27 | 1997-12-12 | Nikon Corp | X線発生装置 |
US6566667B1 (en) | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
US6566668B2 (en) * | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with tandem ellipsoidal mirror units |
NL1008352C2 (nl) * | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
US6459472B1 (en) * | 1998-05-15 | 2002-10-01 | Asml Netherlands B.V. | Lithographic device |
JP2000098098A (ja) | 1998-09-21 | 2000-04-07 | Nikon Corp | X線発生装置 |
JP4329177B2 (ja) | 1999-08-18 | 2009-09-09 | 株式会社ニコン | X線発生装置及びこれを備えた投影露光装置及び露光方法 |
US7180081B2 (en) * | 2000-06-09 | 2007-02-20 | Cymer, Inc. | Discharge produced plasma EUV light source |
JP4800472B2 (ja) | 2000-11-06 | 2011-10-26 | Nskワーナー株式会社 | 発進クラッチ及び発進クラッチの制御方法 |
JP2004519868A (ja) * | 2001-04-17 | 2004-07-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Euvに透明な境界構造 |
JP2003022950A (ja) | 2001-07-05 | 2003-01-24 | Canon Inc | X線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置 |
KR20040052231A (ko) * | 2001-10-12 | 2004-06-22 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 리소그래피용 투영 장치, 소자 제조 방법 및 오염 물질집진부 |
DE10215469B4 (de) * | 2002-04-05 | 2005-03-17 | Xtreme Technologies Gmbh | Anordnung zur Unterdrückung von Teilchenemission bei einer Strahlungserzeugung auf Basis eines heißen Plasmas |
EP1389747B1 (en) | 2002-08-15 | 2008-10-15 | ASML Netherlands B.V. | Lithographic projection apparatus and reflector asembly for use in said apparatus |
JP4115913B2 (ja) * | 2002-08-23 | 2008-07-09 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置及び前記装置で使用する微粒子バリヤ |
JP4235480B2 (ja) * | 2002-09-03 | 2009-03-11 | キヤノン株式会社 | 差動排気システム及び露光装置 |
CN100476585C (zh) * | 2002-12-23 | 2009-04-08 | Asml荷兰有限公司 | 具有可扩展薄片的杂质屏蔽 |
US7217941B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Systems and methods for deflecting plasma-generated ions to prevent the ions from reaching an internal component of an EUV light source |
US7034308B2 (en) * | 2003-06-27 | 2006-04-25 | Asml Netherlands B.V. | Radiation system, contamination barrier, lithographic apparatus, device manufacturing method and device manufactured thereby |
CN100555082C (zh) * | 2003-11-11 | 2009-10-28 | Asml荷兰有限公司 | 抑制污染的光刻设备及其器件制造方法 |
US7307263B2 (en) * | 2004-07-14 | 2007-12-11 | Asml Netherlands B.V. | Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap |
KR100576512B1 (ko) * | 2004-07-15 | 2006-05-03 | 동부일렉트로닉스 주식회사 | 오염 방지 노광장치 |
US7145132B2 (en) * | 2004-12-27 | 2006-12-05 | Asml Netherlands B.V. | Lithographic apparatus, illumination system and debris trapping system |
US7414251B2 (en) * | 2004-12-28 | 2008-08-19 | Asml Netherlands B.V. | Method for providing an operable filter system for filtering particles out of a beam of radiation, filter system, apparatus and lithographic apparatus comprising the filter system |
SG123767A1 (en) * | 2004-12-28 | 2006-07-26 | Asml Netherlands Bv | Lithographic apparatus, illumination system and filter system |
SG123770A1 (en) * | 2004-12-28 | 2006-07-26 | Asml Netherlands Bv | Lithographic apparatus, radiation system and filt er system |
JP4366358B2 (ja) * | 2004-12-29 | 2009-11-18 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、照明システム、フィルタ・システム、およびそのようなフィルタ・システムのサポートを冷却するための方法 |
US7106832B2 (en) * | 2005-01-10 | 2006-09-12 | Asml Netherlands B.V. | Apparatus including a radiation source, a filter system for filtering particles out of radiation emitted by the source, and a processing system for processing the radiation, a lithographic apparatus including such an apparatus, and a method of filtering particles out of radiation emitting and propagating from a radiation source |
US7233010B2 (en) * | 2005-05-20 | 2007-06-19 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
BRPI0520295B1 (pt) | 2005-06-13 | 2019-05-28 | Nokia Technologies Oy | Método e aparelho para suportar o posicionamento baseado em satélite de um dispositivo móvel usando os dados de assistência |
US8873021B2 (en) | 2005-06-14 | 2014-10-28 | Koninklijke Philips N.V. | Debris mitigation system with improved gas distribution |
US7397056B2 (en) * | 2005-07-06 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus, contaminant trap, and device manufacturing method |
US7453071B2 (en) * | 2006-03-29 | 2008-11-18 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus comprising same |
-
2005
- 2005-07-06 US US11/175,036 patent/US7397056B2/en not_active Expired - Fee Related
-
2006
- 2006-06-23 TW TW095122604A patent/TWI341443B/zh not_active IP Right Cessation
- 2006-07-04 SG SG200604526A patent/SG128670A1/en unknown
- 2006-07-04 SG SG200809052-4A patent/SG149006A1/en unknown
- 2006-07-05 CN CN2006101031214A patent/CN1892441B/zh not_active Expired - Fee Related
- 2006-07-05 EP EP06076366A patent/EP1742110B1/en not_active Expired - Fee Related
- 2006-07-05 JP JP2006185435A patent/JP4463243B2/ja not_active Expired - Fee Related
- 2006-07-05 DE DE602006002439T patent/DE602006002439D1/de active Active
- 2006-07-06 KR KR1020060063617A patent/KR100803741B1/ko not_active IP Right Cessation
- 2006-07-06 US US11/481,252 patent/US7612353B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI407262B (zh) * | 2007-11-05 | 2013-09-01 | 羅門哈斯電子材料有限公司 | 浸潤式微影組成物及製程 |
Also Published As
Publication number | Publication date |
---|---|
SG149006A1 (en) | 2009-01-29 |
SG128670A1 (en) | 2007-01-30 |
EP1742110A2 (en) | 2007-01-10 |
EP1742110B1 (en) | 2008-08-27 |
CN1892441A (zh) | 2007-01-10 |
JP4463243B2 (ja) | 2010-05-19 |
DE602006002439D1 (de) | 2008-10-09 |
EP1742110A3 (en) | 2007-05-23 |
US20070018118A1 (en) | 2007-01-25 |
CN1892441B (zh) | 2011-04-06 |
KR20070005528A (ko) | 2007-01-10 |
KR100803741B1 (ko) | 2008-02-15 |
JP2007019510A (ja) | 2007-01-25 |
US7612353B2 (en) | 2009-11-03 |
TWI341443B (en) | 2011-05-01 |
US7397056B2 (en) | 2008-07-08 |
US20070023706A1 (en) | 2007-02-01 |
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