TW200618298A - Fabrication method of thin film transistor - Google Patents

Fabrication method of thin film transistor

Info

Publication number
TW200618298A
TW200618298A TW093135856A TW93135856A TW200618298A TW 200618298 A TW200618298 A TW 200618298A TW 093135856 A TW093135856 A TW 093135856A TW 93135856 A TW93135856 A TW 93135856A TW 200618298 A TW200618298 A TW 200618298A
Authority
TW
Taiwan
Prior art keywords
layer
metal gate
thin film
film transistor
fabrication method
Prior art date
Application number
TW093135856A
Other languages
Chinese (zh)
Other versions
TWI242289B (en
Inventor
Feng-Yuan Gan
Han-Tu Lin
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW093135856A priority Critical patent/TWI242289B/en
Priority to US11/142,928 priority patent/US20060110866A1/en
Application granted granted Critical
Publication of TWI242289B publication Critical patent/TWI242289B/en
Publication of TW200618298A publication Critical patent/TW200618298A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A fabrication method of thin film transistor. A metal gate is formed on an insulator substrate. The surface of metal gate is subjected to a hydrogen plasma treatment to remove oxide formed thereon. A nitride layer as a buffer layer is formed to cover the metal gate. A gate insulating layer is formed on the buffer layer. A semiconductor layer is formed on the gate insulating layer. A source/drain layer is formed on the semiconductor layer. The buffer layer prevents the metal gate from damage in subsequent plasma enhanced chemical vapor deposition processes.
TW093135856A 2004-11-22 2004-11-22 Fabrication method of thin film transistor TWI242289B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW093135856A TWI242289B (en) 2004-11-22 2004-11-22 Fabrication method of thin film transistor
US11/142,928 US20060110866A1 (en) 2004-11-22 2005-06-02 Method for fabricating thin film transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093135856A TWI242289B (en) 2004-11-22 2004-11-22 Fabrication method of thin film transistor

Publications (2)

Publication Number Publication Date
TWI242289B TWI242289B (en) 2005-10-21
TW200618298A true TW200618298A (en) 2006-06-01

Family

ID=36461430

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093135856A TWI242289B (en) 2004-11-22 2004-11-22 Fabrication method of thin film transistor

Country Status (2)

Country Link
US (1) US20060110866A1 (en)
TW (1) TWI242289B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101168728B1 (en) * 2005-07-15 2012-07-26 삼성전자주식회사 Wire and method for fabricating interconnection line and thin film transistor substrate and method for fabricating the same
TW200805667A (en) * 2006-07-07 2008-01-16 Au Optronics Corp A display panel structure having a circuit element and a method of manufacture
KR20080008562A (en) 2006-07-20 2008-01-24 삼성전자주식회사 Method of manufacturing thin film transistor substrate, thin film transistor substrate and display device having the same
TWI316297B (en) * 2006-11-10 2009-10-21 Innolux Display Corp Thin film transistor substrate
TWI425639B (en) * 2007-10-22 2014-02-01 Au Optronics Corp A thin film transistor and a method for manufacturing thereof
TWI360708B (en) * 2007-12-17 2012-03-21 Au Optronics Corp Pixel structure, display panel, elecro-optical app
KR20120012699A (en) * 2010-08-03 2012-02-10 삼성전자주식회사 Method of forming a gate structure and method of manufacturing a semiconductor device using the same
KR101283008B1 (en) * 2010-12-23 2013-07-05 주승기 Method for Manufacturing Thin Film Transistor of Poly Silicon Having Cu Bottom Gate Structure of Trench Type
US8779515B2 (en) 2012-05-21 2014-07-15 International Business Machines Corporation Semiconductor structure containing an aluminum-containing replacement gate electrode
CN103208526B (en) * 2012-12-28 2016-04-13 南京中电熊猫液晶显示科技有限公司 A kind of semiconductor device and manufacture method thereof
US9735177B2 (en) * 2013-08-23 2017-08-15 Boe Technology Group Co., Ltd. Array substrate, method for manufacturing the same and display device
CN103500738A (en) * 2013-10-14 2014-01-08 南京中电熊猫液晶显示科技有限公司 Semiconductor device containing etching barrier layer as well as manufacturing method and application of semiconductor device
CN104409515A (en) * 2014-11-26 2015-03-11 京东方科技集团股份有限公司 Oxide film transistor and manufacturing method thereof, array substrate and display device
CN105182625A (en) * 2015-09-28 2015-12-23 京东方科技集团股份有限公司 Display substrate, manufacturing method thereof and display device
US9911821B2 (en) 2015-11-13 2018-03-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
CN105514120B (en) * 2016-01-21 2018-07-20 京东方科技集团股份有限公司 A kind of double grid tft array substrate and its manufacturing method and display device
CN106229344B (en) * 2016-08-19 2019-10-15 京东方科技集团股份有限公司 Thin film transistor (TFT), preparation method and display device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100306801B1 (en) * 1998-06-25 2002-05-13 박종섭 Thin film transistor and its manufacturing method

Also Published As

Publication number Publication date
US20060110866A1 (en) 2006-05-25
TWI242289B (en) 2005-10-21

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